Device having a diaphragm, electronic device

Abstract

The device with a diaphragm and the electronic equipment belong to the technical field of devices. The device with a diaphragm comprises a substrate layer and a diaphragm layer. The device with a diaphragm comprises at least one first device region. In one first device region: the substrate layer has a first cavity, the first cavity has a target recess on at least one side of the first orthographic projection of the first cavity on a reference plane parallel to the substrate layer in a recess direction, the recess direction is perpendicular to the direction in which the maximum length of the first orthographic projection is located, and the length of the first orthographic projection in the recess direction is less than the maximum length; the first diaphragm region of the diaphragm layer overlaps the first orthographic projection in the reference plane, and at least part of the first diaphragm region can convert electrical energy and mechanical energy. The application can improve the bandwidth of the device with a diaphragm and enrich the application scenarios of the device.

Description

Technical Field

[0001] This application relates to the field of device technology, and in particular to a device or electronic device with a diaphragm. Background Technology

[0002] Devices with diaphragms are common in electronic devices, such as transducers, resonators, and filters. Diaphragm-based devices can convert electrical energy into mechanical energy using their diaphragms.

[0003] An ultrasonic transducer is a common type of device with a diaphragm. An ultrasonic transducer can control the diaphragm to vibrate according to an electrical signal to emit ultrasonic waves towards an object. When the ultrasonic waves reflected from the object reach the diaphragm, the diaphragm vibrates accordingly. The ultrasonic transducer can also generate an electrical signal based on the diaphragm's vibration and use this signal to generate an ultrasonic image of the object.

[0004] However, the bandwidth of current devices with diaphragms is limited, which restricts their application. Summary of the Invention

[0005] This application provides a device and electronic device with a diaphragm, which can solve the problem of limited bandwidth of current devices with diaphragms. The technical solution is as follows:

[0006] In a first aspect, a device with a diaphragm is provided, comprising: a substrate layer and a diaphragm layer. The device with a diaphragm includes at least one first device region. The following explanation will focus on one of the at least one first device regions as an example; the structure of each first device region can be referenced from the structure of this single first device region.

[0007] Within the first device region, the substrate layer has a first cavity. The orthographic projection of the first cavity onto a reference plane parallel to the substrate layer (such as the mounting plane of the device with the diaphragm) is called the first orthographic projection. The direction of the maximum length of the first orthographic projection is called the length direction. The recess direction is perpendicular to this length direction, and any length of the first orthographic projection in the recess direction is less than the maximum length. The first orthographic projection has a target recess on at least one side in the recess direction. It can be seen that the first orthographic projection is elongated, and the target recess is on at least one shorter side of the first orthographic projection. If the recess direction is called the width direction of the first orthographic projection, then the aspect ratio of the first orthographic projection is greater than 1.

[0008] A diaphragm layer covers a first cavity in the substrate layer. Within the first device region, the orthographic projection of a first diaphragm region of the diaphragm layer onto a reference plane overlaps with this first orthographic projection, and at least a portion of the first diaphragm region is capable of converting electrical energy into mechanical energy. For example, converting electrical energy into mechanical energy and vice versa. The region in the diaphragm layer capable of converting electrical energy into mechanical energy can be referred to as the working region in the diaphragm layer. This working region vibrates during operation, and the vibration of this working region is confined by the first cavity. The diaphragm layer comprises multiple film layers, and the region in the first diaphragm region capable of converting electrical energy into mechanical energy may be the overlapping area of ​​these multiple film layers.

[0009] It should be noted that the first orthographic projection of the cavity onto the reference plane refers to the projection formed on the reference plane when light perpendicular to the reference plane is shone onto the reference plane from the side of the light-shielding material away from the reference plane, after the cavity is filled with a light-shielding material. The orthographic projection of an object (such as the first diaphragm region of the diaphragm layer mentioned above) onto the reference plane refers to the projection formed on the reference plane when light perpendicular to the reference plane is shone onto the reference plane from the side of the object away from the reference plane.

[0010] In summary, the diaphragm-based device provided in this application includes a base layer and a diaphragm layer. The base layer has an elongated first cavity, and a target depression is present on the shorter side of the first orthographic projection. This shape also gives the first diaphragm region in the diaphragm layer this shape. This type of first diaphragm region can have coupled multi-order vibration modes during the conversion of electrical and mechanical energy. Typically, odd-order vibration modes have higher gains, while even-order vibration modes have lower gains, resulting in a smaller bandwidth for the coupled multi-order vibration modes. However, in this application, due to the target depression, the even-order vibration modes also have higher gains. Therefore, it is possible to achieve higher gains for all multi-order vibration modes, resulting in a larger bandwidth for the coupled multi-order vibration modes. This gives the diaphragm-based device a larger bandwidth, enriching its application scenarios.

[0011] It should be noted that the first cavity can be considered as a cavity obtained by combining the chambers on both sides of the target recessed in the first cavity at the corresponding position, and the first diaphragm region in the diaphragm layer can also be considered as a structure obtained by combining the parts of the target recessed in the diaphragm layer at the corresponding position. Accordingly, the entire diaphragm-equipped device can be considered as a structure obtained by combining the parts of the target recessed in the device at the corresponding position, wherein each part of the target recessed in the device at the corresponding position can be considered as a diaphragm-equipped device. According to the coupling system theory, under a certain external damping environment, connecting two independent diaphragm-equipped devices in a certain way can achieve a large bandwidth without introducing additional energy loss. Therefore, the diaphragm-equipped device provided in this application is equivalent to a diaphragm-equipped device obtained by connecting the parts on both sides of the target recess in a certain way, which can achieve a large bandwidth without introducing additional energy loss.

[0012] Furthermore, this application achieves increased device bandwidth through the shape design of the first cavity. This solution does not involve complex design of the spacing between multiple first cavities, thus its implementation difficulty is relatively low. Moreover, this solution achieves high bandwidth without adding external damping to the device, therefore it does not introduce additional energy loss.

[0013] The first orthographic projection has a target depression on at least one side of the depression direction. In this application, it is taken as an example that the first orthographic projection has target depressions on both opposite sides of the depression direction. Alternatively, the first orthographic projection may have a target depression on one side of the depression direction, but not on the other side of the depression direction. In this case, the shape of the first cavity will change with the change of the first orthographic projection.

[0014] The device with a diaphragm provided in this application can be implemented in various ways. The following will introduce these implementation methods from the two aspects of the first orthographic projection and the diaphragm layer.

[0015] (1) First orthographic projection.

[0016] The shape of the first orthographic projection of the first cavity in the substrate layer onto the reference plane can vary. For example, the first orthographic projection includes at least two first convex graphic regions connected sequentially along the direction of the maximum length, with the target depression located between adjacent first convex graphic regions. In this application, the first orthographic projection is exemplified by two first convex graphic regions connected sequentially along the length direction; optionally, the number of such first convex graphic regions may be greater than two.

[0017] The shapes of the at least two first convex pattern regions can be the same or different, and their areas can also be the same or different. This application uses the example where the shapes and areas of the at least two first convex pattern regions are the same. It can be understood that the at least two first convex pattern regions can have the same shape but different areas, or they can have different shapes and areas. When the shapes and areas of the at least two first convex pattern regions are the same, the area ratio of the region containing the first cavity in the substrate layer is relatively high. Since the size of the region containing the first cavity in the device with a diaphragm is related to the size of the working area (the area used for converting electrical energy and mechanical energy) in the device with a diaphragm, the area ratio of the working area in the device with a diaphragm is relatively high, and the area utilization rate of the device with a diaphragm is also relatively high. Furthermore, since the area utilization rate of a device is positively correlated with sensitivity, the sensitivity of the device with a diaphragm is relatively high.

[0018] Optionally, for each of at least one side of the first orthographic projection in the concave direction, the target concave is present between every two adjacent first convex graphic regions. It is understood that it is also possible for a portion of adjacent first convex graphic regions to have a target concave, while another portion of adjacent first convex graphic regions do not.

[0019] Optionally, in this application, the first convex graphic region can be a circle with a gap near the adjacent first convex graphic region as an example. Optionally, the first convex graphic region can also be a polygon, or an ellipse with a gap near the adjacent first convex graphic region, etc.

[0020] Furthermore, in addition to including at least two first convex graphic regions connected sequentially along the length direction in the first orthographic projection, the first orthographic projection may also include: a second convex graphic region corresponding to the target depression; two adjacent first convex graphic regions of the target depression are connected through the second convex graphic region corresponding to the target depression.

[0021] The shape of the aforementioned second convex region can be arbitrary. For example, the second convex region can be rectangular, or a rectangle with opposite sides protruding in the concave direction (the protruding sides can be polygonal or arc-shaped), etc. In addition, when the first orthographic projection includes multiple second convex regions, the shapes of the different second convex regions can be the same or different, and the areas of the different second convex regions can also be the same or different.

[0022] (2) Diaphragm layer.

[0023] Optionally, the diaphragm layer includes: a first electrode layer, an electrode insulating layer, and a second electrode layer; the diaphragm layer satisfies any of the following conditions:

[0024] The electrode insulating layer is made of piezoelectric material, and the first electrode layer, the electrode insulating layer, the second electrode layer and the substrate layer are stacked sequentially.

[0025] The electrode insulating layer is made of piezoelectric material. The diaphragm layer also includes a support layer superimposed on the base layer. The first cavity penetrates the base layer on the side near the diaphragm layer. The first electrode layer, the electrode insulating layer and the second electrode layer in the first diaphragm region are all located in the first cavity and are sequentially superimposed on the side of the support layer near the base layer in a direction away from the support layer.

[0026] The electrode insulating layer is made of a non-piezoelectric material, and the first electrode layer, the electrode insulating layer, the substrate layer and the second electrode layer are stacked sequentially.

[0027] Furthermore, the electrode insulating layer is made of a non-piezoelectric material, and the electrode insulating layer, the base layer, and the second electrode layer are stacked sequentially. The first cavity penetrates the base layer on the side near the diaphragm layer, and the first electrode layer is located within the first cavity and is stacked on the electrode insulating layer on the side near the base layer.

[0028] Therefore, the device with a diaphragm provided in this application can be a piezoelectric device or a non-piezoelectric device.

[0029] Furthermore, the overlapping region of the first electrode layer, the electrode insulating layer, and the second electrode layer in the diaphragm layer can perform the conversion of electrical energy and mechanical energy. This region can be represented by the overlapping area of ​​the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer within the first device region onto a reference plane. There are various ways to realize this overlapping region.

[0030] For example, within the first device region, the overlapping area of ​​the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer onto the reference plane includes at least two third convex pattern regions arranged sequentially along the direction of the maximum length, with the target recess located between adjacent third convex pattern regions.

[0031] The at least two third convex graphic regions are spaced apart, or the at least two third convex graphic regions are connected, and the connection points of adjacent third convex graphic regions are recessed into the overlapping region. It can be seen that the overlapping region can be similar in shape to the aforementioned first orthographic projection, which can facilitate the vibration of the diaphragm layer and improve its vibration effect.

[0032] Furthermore, when the overlapping region includes at least two third convex graphic regions connected sequentially along the length direction, and the connection between adjacent third convex graphic regions is recessed into the overlapping region, the overlapping region may further include a fourth convex graphic region for connecting adjacent third convex graphic regions. It is evident that the fourth convex graphic region is recessed in the overlapping region. For example, the third convex graphic region is circular with a notch close to the adjacent third convex graphic region; the fourth convex graphic region is rectangular, or, the fourth convex graphic region is rectangular with protrusions on opposite sides in the recessed direction, the edges of which can be either polygonal or arc-shaped. Additionally, when the overlapping region includes multiple fourth convex graphic regions, the shapes of the different fourth convex graphic regions can be the same or different, and the areas of the different fourth convex graphic regions can also be the same or different. When the overlapping region includes a fourth convex graphic region, and the first orthographic projection includes a second convex graphic region, the shape of the overlapping region is similar to that of the first orthographic projection, which facilitates the vibration of the diaphragm layer and improves the vibration effect of the diaphragm layer.

[0033] When the aforementioned overlapping region includes at least two third convex graphic regions, the shapes of these at least two third convex graphic regions can be the same or different, and their areas can be the same or different. This application uses the example where the shapes and areas of the at least two third convex graphic regions are the same. It is understood that the at least two third convex graphic regions can also be the same in shape but different in area, or they can be different in both shape and area. When the shapes and areas of the at least two third convex graphic regions are the same, the working area of ​​the device with the diaphragm has a higher proportion, and the area utilization rate of the device with the diaphragm is also higher. Furthermore, since the area utilization rate of the device is positively correlated with sensitivity, the device with the diaphragm has higher sensitivity.

[0034] Optionally, the aforementioned at least two third convex regions can correspond one-to-one with the aforementioned at least two first convex regions. The center of the third convex region coincides with the center of the corresponding first convex region, resulting in better vibration performance of the diaphragm in the device with the diaphragm. This coincidence can be complete or approximately coincident. Of course, the center of the third convex region may not coincide with the center of the corresponding first convex region; this application does not impose any limitation on this.

[0035] Furthermore, in the aforementioned device with a diaphragm, within the region of the first device, the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane is located inside the outer edge of the first orthographic projection. In this case, when the diaphragm layer vibrates, the vibration resistance of the electrode insulating layer is small, resulting in higher sensitivity of the device with a diaphragm; and it facilitates the dissipation of production stress during the manufacturing process of the device with a diaphragm, preventing damage to the device with a diaphragm under the action of such production stress.

[0036] Optionally, within the first device region, the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane may not be located inside the outer edge of the first orthographic projection. For example, within the first device region, the orthographic projection of the electrode insulating layer onto the reference plane at least partially overlaps with the first orthographic projection, and the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane is not located inside the outer edge of the first orthographic projection. For instance, the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane coincides with the outer edge of the first orthographic projection, or the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane is located outside the outer edge of the first orthographic projection.

[0037] When the outer edge of the orthographic projection of the electrode insulating layer on the reference plane is located outside the outer edge of the first orthographic projection, in the first electrode layer and the second electrode layer within the first device region, one electrode layer has a cutout, while the other electrode layer and the electrode insulating layer do not have cutouts; the other electrode layer that does not have a cutout can be grounded.

[0038] The overlapping region further includes a peripheral region; the peripheral region surrounds and is spaced apart from the at least two third convex pattern regions, and the orthographic projection of the cutout in one electrode layer onto the reference plane is located between the peripheral region and the third convex pattern region; the peripheral region and the third convex pattern region are respectively the orthographic projections of regions with opposite stresses in the diaphragm layer onto the reference plane. In this case, when driving a device with a diaphragm, electrical signals with opposite phases can be applied to the regions with opposite stresses in the diaphragm layer to make these regions vibrate in the same direction, increasing the vibration area of ​​the diaphragm layer and enhancing the transmission sensitivity of the device. In addition, when the diaphragm layer vibrates under the influence of the external environment, the electrical signal generated by the vibration of one region with opposite stresses in the diaphragm layer can be inverted, and the inverted electrical signal, as well as the electrical signal generated by the vibration of the other region, can be used as the electrical signal received by the vibration of the diaphragm layer, thereby enhancing the intensity of the received electrical signal and enhancing the receiving sensitivity of the device.

[0039] Further, the peripheral region includes at least two enclosing regions connected sequentially along the direction of the maximum length; each of the at least two enclosing regions corresponds one-to-one with the at least two third convex graphic regions, and the enclosing region surrounds the corresponding third convex graphic region, with the connection points of adjacent enclosing regions recessed into the overlapping region. Optionally, the enclosing region can be a ring with a gap near the adjacent enclosing region, or other shapes, such as a square or a circle. The shapes of different enclosing regions can be the same or different, and the areas of different enclosing regions can also be the same or different.

[0040] As can be seen from the above, the overlapping area may include: an outer region and an inner region (such as including the third convex graphic region, or including the third convex graphic region and the fourth convex graphic region); the outer region surrounds the inner region and is spaced apart from the inner region, and the orthographic projection of the hollow in an electrode layer onto the reference plane is located between the outer region and the inner region; the outer region and the third convex graphic region are the orthographic projections of the regions with opposite stresses in the diaphragm layer onto the reference plane.

[0041] Furthermore, when the aforementioned overlapping region includes the peripheral region, within the first device region, the orthographic projection of the electrode layer onto the reference plane lies within the orthographic projection of the electrode insulating layer onto the reference plane. In other words, the outer edge of the outer electrode in the perforated electrode layer lies inside the outer edge of the electrode insulating layer. In this case, the electrical signal loaded on the perforated electrode layer can drive more areas of the electrode insulating layer to vibrate, improving the area utilization of the diaphragm device and enhancing its sensitivity.

[0042] Furthermore, the orthographic projection of the electrode layer on the reference plane lies within the first orthographic projection. Optionally, the orthographic projection of an electrode layer with a perforation (such as the first electrode layer) on the reference plane may overlap with the aforementioned overlapping area. In this case, the electrical signal loaded on the perforated electrode layer can also drive more areas in the electrode insulating layer to vibrate, improving the area utilization of the device with a diaphragm and enhancing the sensitivity of the device. It is understood that the orthographic projection of the electrode layer on the reference plane may not lie within the first orthographic projection, nor may it lie within the orthographic projection of the electrode insulating layer on the reference plane, and the orthographic projection of the perforated electrode layer on the reference plane may not overlap with the aforementioned overlapping area; this application does not limit this.

[0043] The above description illustrates the overlapping region of the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer onto the reference plane within the first device region. Based on this, the first electrode layer, the electrode insulating layer, and the second electrode layer can all be of arbitrary shapes, and this application does not limit them. For example, within the first device region, the diaphragm layer satisfies at least one of the following conditions: the orthographic projection of the first electrode layer onto the reference plane lies within the orthographic projection of the electrode insulating layer onto the reference plane; the orthographic projection of the electrode insulating layer onto the reference plane lies within the orthographic projection of the second electrode layer onto the reference plane; the first orthographic projection lies within the orthographic projection of the second electrode layer onto the reference plane; the shape of the orthographic projection of the electrode insulating layer onto the reference plane is the same as the shape of the overlapping region; and the shape of the orthographic projection of the second electrode layer onto the reference plane is the same as the shape of the first orthographic projection.

[0044] In general, at least one film layer in the diaphragm layer may have the same shape as the overlapping region when projected onto the reference plane, or at least one film layer may have the same shape as the first orthographic projection when projected onto the reference plane, or at least one film layer may have a different shape from both the first orthographic projection and the overlapping region when projected onto the reference plane. In the extending direction of the diaphragm layer, at least one film layer may include a single structure or multiple spaced-apart structures. In directions perpendicular to the length and recess directions, each film layer in the first electrode layer, electrode insulating layer, and second electrode layer may be a single layer or multiple layers; this application does not limit this.

[0045] Furthermore, within the first device region, the diaphragm layer may include a first sub-region and a second sub-region with different vibration center frequencies, and the target depression is located between the orthographic projections of the first sub-region and the second sub-region onto the reference plane. In other words, the vibration center frequencies of different sub-regions in the diaphragm layer whose orthographic projections onto the reference plane are located on either side of the target depression are different. In this case, the vibration modes of different sub-regions with different vibration center frequencies can be coupled during vibration, thereby further improving the bandwidth of the device. Of course, the vibration center frequencies of different sub-regions in the diaphragm layer whose orthographic projections onto the reference plane are located on either side of the target depression can also be the same, and this application does not limit this.

[0046] When the vibration center frequencies of different sub-regions in the diaphragm layer, whose orthogonal projections on the reference plane are located on either side of the target depression, are different, the different sub-regions in the diaphragm layer can achieve different vibration center frequencies in various ways. For example, the different sub-regions of the diaphragm layer may be made of different materials, resulting in different vibration center frequencies; or the diaphragm layer may consist of multiple membrane layers, and at least one membrane layer in the first sub-region and the second sub-region may have different shapes and / or sizes, resulting in different vibration center frequencies in the first sub-region and the second sub-region.

[0047] Furthermore, the diaphragm-equipped device provided in this application includes at least one first device region. The above description uses one first device region as an example; optionally, the at least one first device region may also include multiple first device regions. These multiple first device regions may be arranged in an array or not. Furthermore, when multiple first device regions are arranged in an array, they can be arranged in at least one row and at least one column. For example, the at least one first device region is arranged in at least two rows, and the first device regions of the same order in any two adjacent rows are staggered. The row direction of the first device region is parallel to the aforementioned length direction or concave direction, etc. When the device regions (such as the first device region) in the diaphragm-equipped device are arranged in an array, the area utilization rate of the diaphragm-equipped device is high. Since the area utilization rate of the device is positively correlated with the sensitivity of the device, the sensitivity of the device can be improved.

[0048] Furthermore, the device with a diaphragm also includes at least one second device region. Within the second device region: the base layer has a second cavity, the shape of the second orthographic projection of the second cavity on the reference plane is different from the shape of the first orthographic projection; the orthographic projection of the second diaphragm region of the diaphragm layer on the reference plane overlaps with the second orthographic projection, and at least a portion of the second diaphragm region is capable of converting electrical energy into mechanical energy. When the device with a diaphragm includes a first device region and a second device region, the vibration modes of the diaphragm in the first device region are different from the vibration modes of the diaphragm in the second device region, and the vibration modes of the diaphragm in these two device regions can couple, thereby further improving the bandwidth of the device.

[0049] Optionally, when the device with a diaphragm includes at least one first device region and at least one second device region, the at least one first device region and the at least one second device region are arranged in an array. Furthermore, the first device region and the second device region are staggered in at least one of the row and column directions of the array.

[0050] Furthermore, the device with a diaphragm may also include a connection region (such as a region other than the first device region and the second device region). The first and second electrode layers within the connection region are used to connect the first and second electrode layers outside the connection region. For example, the first and second electrode layers within the connection region are used to connect the first and second electrode layers within the aforementioned first device region (or the first device region and the second device region). Moreover, for each device region in at least one first device region and at least one second device region, the first and second electrode layers within that device region are insulated.

[0051] For different device regions within at least one first device region and at least one second device region, the first electrode layers in the different device regions can be connected together, and the second electrode layers in the different device regions can be connected together, so that the different device regions are connected in parallel; or, the first electrode layer in one device region is connected to the second electrode layer in another, so that the different device regions are connected in series; or, a portion of the device regions are connected in parallel and another portion of the device regions are connected in series. This application does not limit the connection method of different device regions; this application takes the parallel connection of different device regions as an example.

[0052] Furthermore, within a device region of the diaphragm-equipped device, for any one of the at least one film layer of the diaphragm-equipped device, the orthographic projection of the film layer onto the reference plane has at least one of a first axis of symmetry and a second axis of symmetry; wherein the first axis of symmetry is parallel to the direction of the maximum length, and the second axis of symmetry is parallel to the direction of the depression.

[0053] Optionally, when the at least one film layer comprises at least two film layers, within the device region, the first axes of symmetry of the orthographic projections of the at least two film layers onto the reference plane are collinear, and / or, the second axes of symmetry of the orthographic projections of the at least two film layers onto the reference plane are collinear. For example, within the first device region, the orthographic projections of each film layer in the device with the diaphragm all have a first axis of symmetry and a second axis of symmetry on the reference plane, and the first axes of symmetry of the orthographic projections of each film layer onto the reference plane are collinear, and the second axes of symmetry of the orthographic projections of each film layer onto the reference plane are also collinear.

[0054] Furthermore, the orthographic projection of the cavities (such as all cavities) in the diaphragm-equipped device onto the reference plane is centrally symmetric. This allows the diaphragm-equipped device to have excellent out-of-plane beam directivity, enabling the emitted sound waves to be more concentrated and improving the device's performance. When the diaphragm-equipped device includes at least one first cavity and / or at least one second cavity, the orthographic projection of the entire assembly of these cavities onto the reference plane is centrally symmetric. Of course, the orthographic projection of the entire assembly of all cavities in the diaphragm-equipped device onto the reference plane may not be centrally symmetric; this application does not limit this.

[0055] Optionally, the aforementioned base layer includes a body layer and a base insulating layer, the first cavity penetrating the body layer and the base insulating layer, and the diaphragm layer, the base insulating layer and the body layer being stacked sequentially.

[0056] Optionally, the device with a diaphragm is a transducer, resonator, or filter, etc., which can use its diaphragm to convert electrical energy into mechanical energy.

[0057] In a second aspect, an electronic device is provided, comprising: a control circuit, and a device with a diaphragm as described in any of the designs in the first aspect; the control circuit is connected to a diaphragm layer in the device with a diaphragm, and the control circuit is used to control the diaphragm layer to convert electrical energy into mechanical energy. For example, the control circuit may be electrically connected to a first electrode layer and a second electrode layer in the diaphragm layer, and the control circuit may apply electrical signals to these two electrode layers to drive the diaphragm layer to convert electrical energy into mechanical energy. The control circuit may also utilize these two electrode layers to receive electrical signals generated by the vibration of the diaphragm layer. Attached Figure Description

[0058] Figure 1 This is a schematic diagram of the structure of a first device region provided in an embodiment of this application;

[0059] Figure 2 An embodiment provided in this application Figure 1 The diagram shows an exploded view of the first device region.

[0060] Figure 3 A schematic diagram of a first orthographic projection provided for an embodiment of this application;

[0061] Figure 4 A frequency response diagram provided for an embodiment of this application;

[0062] Figure 5 Another frequency response schematic diagram provided for an embodiment of this application;

[0063] Figure 6 A schematic diagram of another first orthographic projection provided for an embodiment of this application;

[0064] Figure 7 A schematic diagram of yet another first orthographic projection provided for an embodiment of this application;

[0065] Figure 8 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0066] Figure 9 An embodiment provided in this application Figure 8 The diagram shows an exploded view of the first device region.

[0067] Figure 10 A schematic diagram of yet another first orthographic projection provided for an embodiment of this application;

[0068] Figure 11 A schematic diagram of yet another first orthographic projection provided for an embodiment of this application;

[0069] Figure 12 A cross-sectional schematic diagram of a first device region provided in an embodiment of this application;

[0070] Figure 13 A schematic diagram of a second orthographic projection provided for an embodiment of this application;

[0071] Figure 14 A schematic diagram of another second orthographic projection provided in an embodiment of this application;

[0072] Figure 15 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0073] Figure 16 A schematic diagram of another second orthographic projection provided in an embodiment of this application;

[0074] Figure 17 A schematic diagram of another second orthographic projection provided in an embodiment of this application;

[0075] Figure 18 A schematic diagram of another second orthographic projection provided in an embodiment of this application;

[0076] Figure 19 A schematic diagram of another frequency response provided for an embodiment of this application;

[0077] Figure 20 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0078] Figure 21 An embodiment provided in this application Figure 20 A cross-sectional view of the first device region shown;

[0079] Figure 22 A schematic diagram of another second orthographic projection provided in an embodiment of this application;

[0080] Figure 23 A schematic diagram of the orthographic projection of an electrode insulating layer onto a reference plane, provided for an embodiment of this application;

[0081] Figure 24 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0082] Figure 25 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0083] Figure 26 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0084] Figure 27 This is a schematic diagram of another structure of the first device region provided in an embodiment of this application;

[0085] Figure 28This is a schematic diagram of another first device region provided in an embodiment of this application;

[0086] Figure 29 This is a schematic diagram of the structure of a second device region provided in an embodiment of this application;

[0087] Figure 30 An embodiment provided in this application Figure 29 The diagram shows an exploded view of the second device region.

[0088] Figure 31 A schematic diagram of another device with a diaphragm provided in an embodiment of this application;

[0089] Figure 32 A schematic diagram of the orthographic projection of a first electrode layer onto a reference plane, provided for an embodiment of this application;

[0090] Figure 33 A cross-sectional view of another device with a diaphragm provided in an embodiment of this application;

[0091] Figure 34 A cross-sectional view of another device with a diaphragm provided in an embodiment of this application;

[0092] Figure 35 A cross-sectional view of another device with a diaphragm provided in an embodiment of this application;

[0093] Figure 36 This is a schematic diagram of the structure of an ultrasonic probe provided in an embodiment of this application. Detailed Implementation

[0094] To make the principles and technical solutions of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0095] Transducers, resonators, and filters are all common diaphragm devices in electronic devices. These devices can convert electrical energy into mechanical energy using their diaphragms.

[0096] Take an ultrasonic transducer as an example. An ultrasonic transducer can function as both a driver (emitting ultrasonic waves) and a sensor (receiving sound waves). When an electrical signal is applied to an ultrasonic transducer, the diaphragm within it responds to the signal, generating mechanical vibrations and emitting ultrasonic waves into the surrounding medium (such as air, water, glass, or body tissue). When external ultrasonic waves are applied to the diaphragm from the surrounding medium, the transducer converts the received ultrasonic waves into electrical signals, enabling the detection of these external ultrasonic waves. Ultrasonic transducers possess characteristics such as high operating frequency, strong penetration, and immunity to ambient light, and are widely used in medical imaging, industrial electronics (e.g., non-destructive testing, flow rate / volume detection), automotive electronics (e.g., ranging, gesture interaction), consumer electronics (e.g., fingerprint recognition, touch feedback and interaction, wearable devices), and smart homes (e.g., distance sensing, robotic vacuum cleaners).

[0097] However, the bandwidth (BW) of currently available diaphragm-based devices is limited, resulting in insufficient bandwidth and restricting their application. For example, in ultrasonic imaging applications, the bandwidth of the ultrasonic transducer determines the imaging resolution of the imaging system; a larger bandwidth results in higher imaging resolution. A large bandwidth allows for shorter ringing times and reduced sound pressure pulse lengths, thereby achieving higher imaging resolution (axial resolution) and a smaller dead zone. Here, bandwidth refers to the frequency band of the sound waves emitted by the diaphragm-based device (also called the transmit bandwidth) and the frequency band of the sound waves that the diaphragm-based device can detect (also called the receive bandwidth); the dead zone refers to the area between the diaphragm-based device and its nearest identifiable location.

[0098] Furthermore, the sensitivity of devices with diaphragms is currently limited, resulting in low sensitivity and further restricting their application. For example, in ultrasonic imaging applications, the sensitivity of the ultrasonic transducer determines the detection depth of the imaging system; the lower the sensitivity, the smaller the detection depth.

[0099] To address the above issues, this application provides a device with a diaphragm, which improves both bandwidth and sensitivity, reducing application limitations. The diaphragm-equipped device provided in this application can be any type of device with a diaphragm, such as the transducer, resonator, and filter described above.

[0100] For example, Figure 1 This is a schematic diagram of the structure of a device with a diaphragm provided in an embodiment of this application. Figure 2 for Figure 1 The diagram shown is an exploded view of a device with a diaphragm. Please refer to... Figure 1 and Figure 2 The device with a diaphragm includes a base layer 01 and a diaphragm layer 02.

[0101] The device with a diaphragm includes at least one first device region. Figure 1 and Figure 2 The following examples all use a device with a diaphragm that includes a first device region as an example. The following embodiments will be explained using one of the at least one first device regions as an example, and the structure of each first device region can be referred to the structure of the first device region.

[0102] Please continue to combine Figure 1 and Figure 2 The substrate 01 can be made of either a flexible or non-flexible material. Within the first device region, the substrate 01 has a first cavity K1. The first orthographic projection of the first cavity K1 onto a reference plane M parallel to the substrate 01 (such as the mounting plane of the device with the diaphragm) can be as follows: Figure 3 As shown. The direction in which the maximum length C of the first orthographic projection lies is called the length direction F1. The concavity direction F2 is perpendicular to the length direction F1. Any length of the first orthographic projection in the concavity direction F2 (perpendicular to the length direction F1) is less than this maximum length. The first orthographic projection has a target concavity A on at least one side of the concavity direction F2. In this embodiment, it is taken that the first orthographic projection has target concavities A on both opposite sides of the concavity direction. Optionally, the first orthographic projection may have a target concavity A on one side of the concavity direction, but not on the other side. In this case, the shape of the first cavity K1 will change with the change of the first orthographic projection. It can be seen that the first orthographic projection is elongated, and the target concavity is on at least one of the shorter sides of the first orthographic projection. If the concavity direction F2 is called the width direction of the first orthographic projection, then the aspect ratio of the first orthographic projection is greater than 1.

[0103] The diaphragm layer 02 covers the first cavity K1 in the base layer 01. Within the first device region, the first diaphragm region of the diaphragm layer 02 (e.g., ...) Figure 1 and Figure 2 The orthographic projection of the entire diaphragm layer 02 in the middle onto the reference plane M (and) Figure 2 The orthographic projection T in the first diaphragm region has the same shape and area as the first orthographic projection, and at least a portion of the first diaphragm region ( Figure 1 (Taking a portion of the area as an example) It can convert electrical energy into mechanical energy. For example, it can convert electrical energy into mechanical energy and vice versa. The area in the diaphragm layer 02 that can convert electrical energy into mechanical energy can be called the working area in the diaphragm layer 02. This working area vibrates when it is working, and the vibration of this working area is restricted by the first cavity. Figure 1 and Figure 2In the embodiment shown, the diaphragm layer 02 includes multiple film layers, and the region in the first diaphragm region capable of converting electrical energy and mechanical energy can be the region where the multiple film layers overlap.

[0104] It should be noted that the first orthographic projection of a cavity (such as the first cavity K1) onto the reference plane M refers to the projection formed on the reference plane M when light perpendicular to the reference plane M is shone onto the reference plane M from the side of the light-shielding material away from the reference plane M, after the cavity is filled with a light-shielding material. Similarly, the orthographic projection of an object (such as the first diaphragm region of the aforementioned diaphragm layer 02) onto the reference plane M refers to the projection formed on the reference plane M when light perpendicular to the reference plane M is shone onto the reference plane M from the side of the object away from the reference plane M.

[0105] In summary, the diaphragm-equipped device provided in this application includes a base layer and a diaphragm layer. The base layer has an elongated first cavity, and a target depression is present on the shorter side of the first orthographic projection. This shape also gives the first diaphragm region in the diaphragm layer this shape. This type of first diaphragm region can have coupled multi-order vibration modes during the conversion of electrical and mechanical energy. Typically, odd-order vibration modes have higher gains, while even-order vibration modes have lower gains, resulting in a smaller bandwidth for the coupled multi-order vibration modes. However, in this application embodiment, due to the target depression, the even-order vibration modes also have higher gains. Therefore, it is possible to achieve higher gains for all multi-order vibration modes, resulting in a larger bandwidth for the coupled multi-order vibration modes. This gives the diaphragm-equipped device a larger bandwidth, enriching its application scenarios.

[0106] It should be noted that the first cavity can be considered as a cavity obtained by combining the chambers on both sides of the target recessed in the first cavity at the corresponding position, and the first diaphragm region in the diaphragm layer can also be considered as a structure obtained by combining the portions of the target recessed in the diaphragm layer at the corresponding position. Correspondingly, the entire diaphragm-equipped device can be considered as a structure obtained by combining the portions of the target recessed in the device at the corresponding position, wherein each portion on both sides of the target recessed in the device can be considered as a diaphragm-equipped device. According to the coupling system theory, under a certain external damping environment, connecting two independent diaphragm-equipped devices in a certain way can achieve a large bandwidth without introducing additional energy loss. Therefore, the diaphragm-equipped device provided in this application embodiment is equivalent to a diaphragm-equipped device obtained by connecting the portions on both sides of the target recess in a certain way, which can achieve a large bandwidth without introducing additional energy loss.

[0107] Furthermore, in this embodiment, the bandwidth of the device is improved by designing the shape of the first cavity. This solution does not involve a complex design of the spacing between multiple first cavities, therefore, the implementation difficulty of this solution is relatively low. Moreover, this solution can achieve a large bandwidth without adding external damping to the outside of the device, thus avoiding the introduction of additional energy loss.

[0108] The implementation methods of the diaphragm-equipped device provided in this application are diverse. The following will introduce these implementation methods from the two aspects of the first orthographic projection and the diaphragm layer.

[0109] (1) First orthographic projection.

[0110] The shape of the first orthographic projection of the first cavity K1 in the substrate 01 onto the reference plane M varies. For example, please refer to... Figure 3 The first orthographic projection may include at least two first convex graphic regions Q1 connected sequentially along the length direction F1, with the target depression A located between adjacent first convex graphic regions Q1.

[0111] Figure 3 The first convex graphic region can be in the form of a circle with a gap near the adjacent first convex graphic region, for example. Alternatively, the first convex graphic region can also be a polygon, or an ellipse with a gap near the adjacent first convex graphic region, etc. The embodiments of this application do not limit this.

[0112] When the first convex region is a circle with a gap close to the adjacent first convex region, and the radii of these two circles are the same, such as Figure 3 As shown, the center distance D between adjacent first convex graphic regions is less than 2R, where R represents the radius of the circle. Figure 4 This is a schematic diagram of the frequency response of the diaphragm-equipped device provided in this application embodiment under different center distances D and the same maximum length L (equal to 2R+D) of the first orthographic projection in an aqueous environment. Figure 4 Of the four maximum lengths L, L1 to L4 increase sequentially. Figure 5 This is a schematic diagram of the frequency response of the diaphragm-equipped device provided in this application under the same maximum length L and different radii R in a first orthographic projection in an aqueous environment. Figure 5 Of the three radii R, R1 to R3 increase sequentially. (Combined with...) Figure 4 and Figure 5It is known that both the radius R and the maximum length L are related to the coupling degree of each vibration mode of the device with a diaphragm. The maximum length is related to the radius R and the distance between the centers D. Therefore, the coupling degree of each vibration mode of the device with a diaphragm is related to the radius R and the distance between the centers D. Generally, the first vibration mode of the device is mainly determined by the size of the radius R, and the coupling degree between each vibration mode is determined by the ratio of the radius R to the distance between the centers D. Furthermore, this coupling degree is also related to the damping of the surrounding medium. Therefore, in the embodiments of this application, the radius R and the distance between the centers D can be designed according to the required coupling degree of each vibration mode of the device and the damping of the surrounding medium.

[0113] in addition, Figure 3 Taking the first orthographic projection as an example, which includes two first convex graphic regions Q1 connected sequentially along the length direction F1, optionally, the number of the first convex graphic regions Q1 can also be greater than 2, and this embodiment of the application does not limit this. For example, as... Figure 6 As shown, the first orthographic projection may also include three first convex graphic regions Q1 connected sequentially along the length direction F1, with the target depression A located between every two adjacent first convex graphic regions Q1. In this case, the shape of the first cavity will change relative to the shape of the first orthographic projection. Figure 2 The shape shown has changed.

[0114] The shapes of the at least two first convex graphic regions may be the same or different, and the areas of the at least two first convex graphic regions may also be the same or different. Figure 3 Taking the example where the shape and area of ​​the at least two first convex pattern regions are identical, it can be understood that the at least two first convex pattern regions can be identical in shape but different in area, or the shape and area of ​​the at least two first convex pattern regions can be different. When the shape and area of ​​the at least two first convex pattern regions are identical, the area ratio of the region containing the first cavity in the substrate layer is relatively high. Since the size of the region containing the first cavity in the diaphragm device is related to the size of the working area (the area used for converting electrical energy and mechanical energy) in the diaphragm device, the area ratio of the working area in the diaphragm device is relatively high, and the area utilization rate of the diaphragm device is also relatively high. Furthermore, since the area utilization rate of the device is positively correlated with sensitivity, the sensitivity of the diaphragm device is relatively high.

[0115] Optionally, for each of at least one side of the first orthographic projection in the concave direction, there is a target concave between every two adjacent first convex graphic regions. It is understood that it is also possible for a portion of the adjacent first convex graphic regions to have a target concave, but for another portion of the adjacent first convex graphic regions not to have a target concave. Figure 3 and Figure 6Taking the first orthographic projection on each side of the concave direction as an example, there is a target concave A between every two first convex graphic regions Q1.

[0116] Furthermore, such as Figure 7 As shown, in addition to including at least two first convex graphic regions Q1 connected sequentially along the length direction in the first orthographic projection, the first orthographic projection may further include: a second convex graphic region Q2 corresponding to the target depression A; two adjacent first convex graphic regions Q1 of the target depression A are connected through the second convex graphic region Q2 corresponding to the target depression A. The location of the second convex graphic region Q2 is recessed into the first orthographic projection. In the first orthographic projection as shown... Figure 7 As shown, the structural schematic diagram of a device with a diaphragm can be... Figure 8 The exploded view of this device can be seen as follows: Figure 9 As shown.

[0117] When the first convex region is a circle with a gap close to the adjacent first convex region, and the radii of these two circles are the same, such as Figure 7 As shown, the center-to-center distance D between adjacent first convex region areas is greater than 2R, where R represents the radius of the circle. In this case, the coupling degree of each vibration mode of the device with a diaphragm is related not only to the radius R and center-to-center distance D, but also to the shape and size of the second convex region. Furthermore, this coupling degree is also related to the damping of the surrounding medium. Therefore, in the embodiments of this application, the radius R, center-to-center distance D, and the shape and size of the second convex region can be designed according to the required coupling degree of each vibration mode of the device and the damping of the surrounding medium.

[0118] It should be noted that, Figure 7 Is Figure 3 Based on the first orthographic projection shown, a second convex region Q2 is added. It can be understood that, for... Figure 3 The first orthographic projection shown may include other first orthographic projections that include at least two second convex graphic regions, and these other first orthographic projections may also include second convex graphic regions. The embodiments of this application will not be described in detail here.

[0119] The shape of the second convex region Q2 mentioned above can be arbitrary. For example, Figure 7 Taking the second convex region Q2 as an example, it is rectangular. Optionally, the second convex region Q2 can also be a rectangle with opposite sides protruding in the concave direction F2, and the edges of the protrusions can be polygonal or arc-shaped. For example, when the edges of the protrusions are polygonal, the first orthographic projection is as follows. Figure 10 As shown; when the edge of the protrusion is curved, the first orthographic projection is as follows. Figure 11As shown. In addition, when the first orthographic projection includes multiple second convex graphic regions Q2, the shapes of the different second convex graphic regions can be the same or different, and the areas of the different second convex graphic regions can also be the same or different.

[0120] (2) Diaphragm layer.

[0121] A diaphragm layer typically includes two electrode layers and an electrode insulating layer located between these two electrode layers. For example, please refer to the foregoing. Figure 1 , Figure 2 , Figure 8 or Figure 9 The diaphragm layer 02 may include: a first electrode layer 021, an electrode insulating layer 022, and a second electrode layer 023. The electrode insulating layer 022 is made of a piezoelectric material, and the first electrode layer 021, electrode insulating layer 022, second electrode layer 023, and base layer 01 are stacked sequentially. At this time, Figure 1 , Figure 2 , Figure 8 or Figure 9 A schematic diagram of the cross-section of the device with a diaphragm, perpendicular to the reference plane M and parallel to the length direction F1, can be shown as follows: Figure 12 As shown.

[0122] When the electrode insulating layer 022 is made of a piezoelectric material, the piezoelectric material may include, but is not limited to, aluminum nitride (AlN), scandium aluminum nitride (AlScN), lead zirconate titanate (PZT), zinc oxide (ZnO), vanadium-doped zinc oxide (V-ZnO), polyvinylidene fluoride (PVDF), polyvinylidene fluoride trifluoroethylene (PVDF-TRFE), and other piezoelectric materials.

[0123] The materials of the first electrode layer 021 and the second electrode layer 022 may include, but are not limited to, conductive metal materials such as molybdenum, titanium, platinum, aluminum, gold, and tungsten, as well as conductive materials such as highly silicon-doped and conductive polymer materials.

[0124] The first cavity K1 in the substrate layer 01 can penetrate the side of the substrate layer 01 near the second electrode layer 023, or it can not penetrate the side of the substrate layer 01 near the second electrode layer 023. The first cavity K1 in the substrate layer 01 can also penetrate the side of the substrate layer 01 away from the second electrode layer 023, or it can not penetrate the side of the substrate layer 01 away from the second electrode layer 023. In this embodiment, an example is taken where the first electrode layer 021, electrode insulating layer 022, second electrode layer 023, and substrate layer 01 are stacked sequentially, and the first cavity K1 does not penetrate the side of the substrate layer 01 near the second electrode layer 023, but penetrates the side of the substrate layer 01 away from the second electrode layer 023. For example, please refer to... Figure 1 , Figure 2 , Figure 8 , Figure 9 or Figure 12 The base layer 01 includes a body layer 011 and a base insulating layer 012. The first cavity K1 penetrates the body layer 011 and the base insulating layer 012. The diaphragm layer 02, the base insulating layer 012 and the body layer 011 are stacked in sequence.

[0125] Furthermore, the overlapping region of the first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 in the diaphragm layer can perform the conversion of electrical energy and mechanical energy. This region can be represented by the overlapping region of the orthographic projections of the first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 within the first device region onto the reference plane M. There are various ways to realize this overlapping region.

[0126] For example, in Figure 1 , Figure 2 , Figure 8 or Figure 9 In the first device region, the overlapping area of ​​the orthographic projections of the first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 onto the reference plane M can be as follows: Figure 13 As shown. The overlapping area may include at least two third convex graphic regions Q3 arranged sequentially along the length direction F1, with adjacent third convex graphic regions spaced apart, and the target depression A located between adjacent third convex graphic regions Q3. Figure 13 Taking the overlapping area as an example, which includes two third convex graphic regions Q3, and the third convex graphic regions Q3 are circular, the number of third convex graphic regions Q3 can be greater than 2, and the third convex graphic regions Q3 can also be other shapes, such as quadrilaterals, hexagons, etc.

[0127] It is understandable that the overlapping area of ​​the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer in the first device region onto the reference plane can also have other implementation methods.

[0128] For example, the overlapping region does not include the aforementioned at least two third convex pattern regions, but has the exact same shape as the first device region. In this case, within the first device region, the first electrode layer, the electrode insulating layer, and the second electrode layer completely cover the substrate layer. All areas within the aforementioned first diaphragm region of the diaphragm layer are capable of converting electrical energy into mechanical energy.

[0129] For example, such as Figure 14 As shown, in Figure 13 Based on the overlapping region shown, adjacent third convex region Q3 are connected, and the connection points of adjacent third convex region Q3 are recessed into the overlapping region. At this time, the structure of the device with the diaphragm can be as follows: Figure 15 As shown. Figure 14 and Figure 15In this example, the third convex graphic region Q3 is a circle with a gap close to the adjacent third convex graphic region Q3. The third convex graphic region Q3 can also be other shapes, such as a polygon, or an ellipse with a gap close to the adjacent third convex graphic region Q3, etc., and the embodiments of this application are not limited in this respect.

[0130] When the overlapping region includes at least two third convex graphic regions, the shape of the overlapping region is similar to that of the first orthographic projection, which can facilitate the vibration of the diaphragm layer and improve the vibration effect of the diaphragm layer.

[0131] Please continue to refer to the above. Figure 14 When the aforementioned overlapping region includes at least two third convex graphic regions Q3 connected sequentially along the length direction, and the connection point of adjacent third convex graphic regions Q3 is recessed into the overlapping region, the overlapping region may further include a fourth convex graphic region Q4 for connecting adjacent third convex graphic regions Q3. It can be seen that the location of the fourth convex graphic region Q4 in the overlapping region is recessed. For example, the third convex graphic region Q3 is circular with a notch close to the adjacent third convex graphic region Q3; the fourth convex graphic region Q4 is rectangular (e.g., ...). Figure 14 (as shown), or, the fourth convex region Q4 is a rectangle with protrusions on opposite sides in the concave direction, the edges of which can be polygonal (e.g., Figure 16 (As shown) can also be arc-shaped (such as) Figure 17 (As shown). In addition, when the overlapping region includes multiple fourth convex graphic regions Q4, the shapes of the different fourth convex graphic regions can be the same or different, and the areas of the different fourth convex graphic regions can also be the same or different.

[0132] When the overlapping region includes the fourth convex shape region and the first orthographic projection includes the second convex shape region, the shape of the overlapping region is similar to that of the first orthographic projection, which can facilitate the vibration of the diaphragm layer and improve the vibration effect of the diaphragm layer.

[0133] Optionally, such as Figure 18 As shown, when the overlapping region includes at least two third convex graphic regions Q3 connected sequentially along the length direction F1, and the connection point of adjacent third convex graphic regions Q3 is recessed into the overlapping region, the overlapping region may not include the fourth convex graphic region Q4. This application embodiment does not limit this.

[0134] When the aforementioned overlapping region includes at least two third convex region regions (e.g.) Figure 13 , Figure 14 , Figure 16 , Figure 17 or Figure 18As shown), the shapes of the at least two third convex graphic regions can be the same or different, and the areas of the at least two third convex graphic regions can be the same or different. Figure 13 , Figure 14 , Figure 16 , Figure 17 and Figure 18 The examples used here all assume that the at least two third convex graphic regions have the same shape and area. It is understood that the at least two third convex graphic regions could also have the same shape but different areas, or the at least two third convex graphic regions could have different shapes and areas. Furthermore, Figure 13 , Figure 14 , Figure 16 , Figure 17 and Figure 18 The first orthographic projection is used in the middle. Figure 3 As shown in the example, it can be understood that... Figure 13 , Figure 14 , Figure 16 , Figure 17 and Figure 18 The first orthographic projection in can also be compared with Figure 3 The first orthographic projection shown is different. When the shape and area of ​​at least two third convex graphic regions are the same, the working area of ​​the device with a diaphragm has a higher proportion, the area utilization rate of the device with a diaphragm is also higher, and the sensitivity of the device with a diaphragm is higher.

[0135] Optionally, the aforementioned at least two third convex graphic regions can correspond one-to-one with the aforementioned at least two first convex graphic regions. The center of the third convex graphic region coincides with the center of the corresponding first convex graphic region (e.g., ...). Figure 13 , Figure 14 , Figure 16 , Figure 17 and Figure 18 As shown in the diagram, the vibration effect of the diaphragm layer is better at this time. The overlap here can be complete or approximately overlap. Of course, the center of the third convex region and the center of the corresponding first convex region may not coincide, and this embodiment does not limit this.

[0136] Furthermore, in the diaphragm-equipped device provided in the foregoing embodiments, within the first device region, the outer edge of the orthographic projection of the electrode insulating layer 022 onto the reference plane M is located inside the outer edge of the first orthographic projection. In this case, when the diaphragm layer vibrates, the vibration resistance of the electrode insulating layer 022 is small, resulting in higher sensitivity of the diaphragm-equipped device. Figure 19As shown, within the first device region, the frequency response curve when the outer edge of the orthographic projection of the electrode insulating layer 022 on the reference plane M is located inside the outer edge of the first orthographic projection can be curve 1, and the frequency response curve when the outer edge of the orthographic projection of the electrode insulating layer 022 on the reference plane M is located outside the outer edge of the first orthographic projection can be curve 2. According to curves 1 and 2, when the outer edge of the orthographic projection of the electrode insulating layer 022 on the reference plane M is located inside the outer edge of the first orthographic projection, the device with the diaphragm has higher sensitivity.

[0137] Furthermore, when the outer edge of the orthographic projection of the electrode insulating layer 022 on the reference plane M is located inside the outer edge of the first orthographic projection within the first device region, it facilitates the dissipation of production stress during the manufacturing process of the device with a diaphragm, thus preventing damage to the device with a diaphragm under the action of the production stress.

[0138] Optionally, within the first device region, the outer edge of the orthographic projection of the electrode insulating layer 022 onto the reference plane M may not be located inside the outer edge of the first orthographic projection. For example, within the first device region, the orthographic projection of the electrode insulating layer 022 onto the reference plane at least partially overlaps with the first orthographic projection, and the outer edge of the orthographic projection of the electrode insulating layer 022 onto the reference plane is not located inside the outer edge of the first orthographic projection. For instance, the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane coincides with the outer edge of the first orthographic projection, or the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane is located outside the outer edge of the first orthographic projection (in this case, the structure of the device with the diaphragm can be as follows). Figure 20 and Figure 21 As shown, Figure 21 for Figure 20 (Schematic diagram of the mid-section of PP).

[0139] When the outer edge of the orthographic projection of the electrode insulating layer on the reference plane is located outside the outer edge of the first orthographic projection, in the first electrode layer 021 and the second electrode layer 023 within the first device region, one electrode layer may have a cutout, while the other electrode layer and the electrode insulating layer 022 may not have cutouts. The other electrode layer without cutouts may be grounded. Figure 20 and Figure 21 In this configuration, the first electrode layer 021 has a cutout, while the second electrode layer 023 and the electrode insulating layer 022 do not have cutouts. In this case, the overlapping area of ​​the orthographic projections of the first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 within the first device region onto the reference plane M can be as follows: Figure 22 As shown. Please refer to. Figure 22The overlapping region includes not only the aforementioned third convex graphic region Q3, but also an outer region W; the outer region W surrounds the aforementioned at least two third convex graphic regions Q3 and is spaced apart from the aforementioned at least two third convex graphic regions Q3.

[0140] It should be noted that when the aforementioned overlapping area includes the fourth convex pattern region Q4, since the fourth convex pattern region Q4 is located between the adjacent third convex pattern region Q3, when the aforementioned outer region W surrounds the third convex pattern region Q3, the aforementioned outer region W also surrounds the aforementioned fourth convex pattern region Q4 and is also spaced apart from the fourth convex pattern region Q4. The orthographic projection of the perforation in the aforementioned electrode layer (such as the first electrode layer 021) with perforation on the reference plane M is located between the outer region W and the third convex pattern region Q3.

[0141] in addition, Figure 22 China and Israel in Figure 14 Based on the overlapping area shown, the overlapping area also includes, for example, the peripheral area. It can be understood that other overlapping areas provided in the embodiments of this application (such as...) Figure 13 Based on the overlapping area shown, the overlapping area may also include the outer area, but this application embodiment does not limit this.

[0142] Alternatively, please continue to refer to Figure 22 The outer region W and the third convex region Q3 are the orthogonal projections of the stress-opposite regions in the diaphragm layer O2 onto the reference plane M. In this case, when driving a device with a diaphragm, opposite-phase electrical signals can be applied to these stress-opposite regions in the diaphragm layer to cause them to vibrate in the same direction, increasing the vibration area of ​​the diaphragm layer and enhancing the device's transmission sensitivity. Furthermore, when the diaphragm layer vibrates under the influence of the external environment, the electrical signal generated by the vibration of one of the stress-opposite regions in the diaphragm layer can be inverted. This inverted signal, along with the signal generated by the vibration of the other region, can be used as the electrical signal received by the diaphragm layer, thereby enhancing the intensity of the received electrical signal and improving the device's receiving sensitivity.

[0143] For example, when the aforementioned overlapping region includes the peripheral region, and one of the electrode layers in the first and second electrode layers has a cutout, that electrode layer may include an inner electrode and an outer electrode, such as... Figure 20 and Figure 21As shown, the first electrode layer 021 includes an inner electrode 0211 and an outer electrode 0212. The outer electrode surrounds the inner electrode, and the cutout in the electrode layer is located between the outer and inner electrodes. The orthographic projection of the inner electrode onto the reference plane overlaps with the area surrounded by the aforementioned peripheral region (such as the aforementioned third convex graphic region), and the orthographic projection of the outer electrode onto the reference plane overlaps with the aforementioned peripheral region. For example, the orthographic projection of the inner electrode onto the reference plane is the area surrounded by the aforementioned peripheral region (such as the aforementioned third convex graphic region), and the orthographic projection of the outer electrode onto the reference plane is the aforementioned peripheral region. When driving a device with a diaphragm, electrical signals with opposite phases can be applied between the inner electrode and another electrode layer, and between the outer electrode and another electrode layer, respectively. When the diaphragm layer vibrates under the influence of the external environment, a first electrical signal is generated between the inner electrode and another electrode layer, and a second electrical signal is generated between the outer electrode and another electrode layer. One of the first and second electrical signals can be inverted, and both the inverted signal and the other signal can be used as electrical signals generated by the vibration of the diaphragm layer, thereby enhancing the intensity of the received electrical signal and improving the receiving sensitivity of the device.

[0144] For further information, please continue to refer to [link / reference]. Figure 22 The aforementioned peripheral region W may include at least two enclosing regions B connected sequentially along the length direction F1; each of the at least two enclosing regions B corresponds one-to-one with at least two third convex graphic regions Q3, with each enclosing region B surrounding its corresponding third convex graphic region Q3, and the connection points of adjacent enclosing regions B being recessed into the aforementioned overlapping region. Optionally, the enclosing region B may be an annulus with a notch near the adjacent enclosing region B. It is understood that the aforementioned peripheral region may also be related to... Figure 22 The outer region W shown can vary; for example, it can be a square, a circle, or something similar. The shapes of different enclosing regions B can be the same or different, and their areas can also be the same or different.

[0145] As can be seen from the above, the overlapping area may include: an outer region and an inner region (such as including the third convex graphic region, or including the third convex graphic region and the fourth convex graphic region); the outer region surrounds the inner region and is spaced apart from the inner region, and the orthographic projection of the hollow in an electrode layer onto the reference plane is located between the outer region and the inner region; the outer region and the third convex graphic region are the orthographic projections of the regions with opposite stresses in the diaphragm layer onto the reference plane.

[0146] For further information, please continue to refer to [link / reference]. Figure 20 and Figure 21In the case where the aforementioned overlapping region includes the peripheral region, within the first device region, the orthographic projection of a perforated electrode layer (such as the first electrode layer 021) onto the reference plane M lies within the orthographic projection of the electrode insulating layer 022 onto the reference plane M. In other words, the outer edge of the outer electrode in the perforated electrode layer lies inside the outer edge of the electrode insulating layer. In this case, the electrical signal loaded on the perforated electrode layer can drive more areas of the electrode insulating layer to vibrate, improving the area utilization of the device with a diaphragm and enhancing the sensitivity of the device.

[0147] Furthermore, the orthographic projection of the electrode layer on the reference plane can lie within the first orthographic projection. Optionally, the orthographic projection of the perforated electrode layer (such as the first electrode layer 021) on the reference plane M can overlap with the aforementioned overlapping region. In this case, the electrical signal loaded on the perforated electrode layer can also drive more areas in the electrode insulating layer to vibrate, improving the area utilization of the diaphragm device and enhancing the sensitivity of the device.

[0148] It is understood that the orthographic projection of the electrode layer on the reference plane may not be located within the first orthographic projection, and the orthographic projection of the electrode insulating layer on the reference plane may not be located within the orthographic projection of the electrode insulating layer on the reference plane. The orthographic projection of the electrode layer with a cutout on the reference plane may not overlap with the aforementioned overlapping area. This application does not limit this.

[0149] The above embodiments describe the overlapping region of the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer on the reference plane within the first device region. Based on this, the first electrode layer, the electrode insulating layer, and the second electrode layer can all be of arbitrary shape, and this application embodiment does not limit this.

[0150] For example, within the first device region, the diaphragm layer satisfies at least one of the following conditions:

[0151] Please refer to Figure 1 , Figure 2 , Figure 8 , Figure 9 , Figure 15 , Figure 20 or Figure 21 The orthographic projection of the first electrode layer 021 on the reference plane M is located within the orthographic projection of the electrode insulating layer 022 on the reference plane M; at this time, the outer edge of the first electrode layer 021 is located inside the outer edge of the electrode insulating layer 022.

[0152] Please refer to Figure 1 , Figure 2 , Figure 8 , Figure 9 , Figure 15 , Figure 20or Figure 21 The orthographic projection of the electrode insulating layer 022 on the reference plane M is located within the orthographic projection of the second electrode layer 023 on the reference plane M; at this time, the outer edge of the electrode insulating layer 022 is located inside the outer edge of the second electrode layer 023.

[0153] Please refer to Figure 21 The first orthographic projection is located within the orthographic projection of the second electrode layer 023 on the reference plane M; at this time, the inner wall of the first cavity is located inside the outer edge of the second electrode layer 023.

[0154] Please refer to Figure 1 , Figure 2 , Figure 8 , Figure 9 , Figure 15 , Figure 20 or Figure 21 The shape of the orthographic projection of the second electrode layer on the reference plane is the same as the shape of the first orthographic projection;

[0155] Furthermore, the shape of the orthographic projection of the electrode insulating layer 022 onto the reference plane M is the same as the shape of the aforementioned overlapping region. In this case, the overlapping region can be located within the orthographic projection of the electrode insulating layer 022 onto the reference plane M, and the area of ​​the overlapping region is smaller than the area of ​​the orthographic projection of the electrode insulating layer 022 onto the reference plane M; or, please refer to... Figure 1 , Figure 2 , Figure 8 , Figure 9 , Figure 15 , Figure 20 or Figure 21 The shape of the orthographic projection of the electrode insulating layer 022 onto the reference plane is the same as the shape of the first orthographic projection; or, the shape of the orthographic projection of the electrode insulating layer 022 onto the reference plane M (such as...) Figure 23 As shown, the orthographic projection at this time is in the shape of an "8" and is different in shape from both the first orthographic projection and the overlapping region. The overlapping region can be located within the orthographic projection of the electrode insulating layer 022 on the reference plane M, and the area of ​​the overlapping region is smaller than the area of ​​the orthographic projection of the electrode insulating layer 022 on the reference plane M. The electrode insulating layer 022 may or may not have perforations.

[0156] In general, at least one film layer in the diaphragm layer may have the same shape as the overlapping region when projected onto the reference plane. Alternatively, at least one film layer in the diaphragm layer may have the same shape as the first orthographic projection when projected onto the reference plane. Alternatively, at least one film layer in the diaphragm layer may have a different shape from both the first orthographic projection and the overlapping region when projected onto the reference plane. In the extending direction of the diaphragm layer, at least one film layer may include a single structure or multiple spaced-apart structures. In directions perpendicular to the length and recess directions, each film layer in the first electrode layer, electrode insulating layer, and second electrode layer may be a single layer or multiple layers; this embodiment does not limit this.

[0157] Other structural implementations of the diaphragm layer are also possible, and the embodiments in this application will not be exhaustive.

[0158] Furthermore, within the first device region, the diaphragm layer may include a first sub-region and a second sub-region with different vibration center frequencies, and the target depression is located between the orthographic projections of the first sub-region and the second sub-region onto the reference plane. In other words, the vibration center frequencies of different sub-regions in the diaphragm layer whose orthographic projections onto the reference plane are located on either side of the target depression are different. In this case, the vibration modes of different sub-regions with different vibration center frequencies can be coupled during vibration, thereby further improving the bandwidth of the device. Of course, the vibration center frequencies of different sub-regions in the diaphragm layer whose orthographic projections onto the reference plane are located on either side of the target depression can also be the same, and this embodiment of the application does not limit this.

[0159] When the vibration center frequencies of different sub-regions in the diaphragm layer, whose orthogonal projections on the reference plane are located on either side of the target depression, are different, the different sub-regions in the diaphragm layer can achieve different vibration center frequencies in various ways. For example, the different sub-regions of the diaphragm layer may be made of different materials, resulting in different vibration center frequencies; or the diaphragm layer may consist of multiple membrane layers, and at least one membrane layer in the first sub-region and the second sub-region may have different shapes and / or sizes, resulting in different vibration center frequencies in the first sub-region and the second sub-region.

[0160] For example, such as Figure 24 As shown, taking the region to the right of the recess in the diaphragm layer as the first sub-region and the region to the left of the recess as the second sub-region as an example, in each of the first electrode layer 021, electrode insulating layer 022, and second electrode layer 023 of the diaphragm layer, the portions belonging to the first sub-region and the portions belonging to the second sub-region have the same shape, but the size of the portion belonging to the first sub-region is smaller than the size of the portion belonging to the second sub-region. In this case, the materials of the portions belonging to the first sub-region and the portions belonging to the second sub-region in each of the first electrode layer 021, electrode insulating layer 022, and second electrode layer 023 can be the same.

[0161] For example, such as Figure 25 As shown, taking the region to the right of the recess in the diaphragm layer as the first sub-region and the region to the left of the recess as the second sub-region as an example, in each of the first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 of the diaphragm layer, the portions belonging to the first sub-region and the portions belonging to the second sub-region have the same shape. In each of the first electrode layer 021 and the second electrode layer 023, the portions belonging to the first sub-region and the portions belonging to the second sub-region have the same size. However, in the electrode insulating layer 022, the size of the portion belonging to the first sub-region is larger than the size of the portion belonging to the second sub-region.

[0162] Furthermore, the diaphragm-equipped device provided in this application embodiment includes at least one first device region. In the above embodiments, the device is described as including one first device region as an example. Optionally, the at least one first device region may also include multiple first device regions. These multiple first device regions may be arranged in an array or not. Furthermore, when multiple first device regions are arranged in an array, they can be arranged in at least one row and at least one column. When the device regions (such as the first device region) in the diaphragm-equipped device are arranged in an array, the area utilization rate of the diaphragm-equipped device is high. Since the area utilization rate of the device is positively correlated with the sensitivity of the device, the sensitivity of the device can be improved.

[0163] For example, Figure 26 and Figure 27 The images show top views of two diaphragm-equipped devices provided in embodiments of this application. Figure 26 and Figure 27 As shown, the device with a diaphragm includes four first device regions. Figure 26 The first device region in China and Israel, such as Figure 15 As shown in the example, Figure 27 The first device region in China and Israel, such as Figure 20 and Figure 21 As shown in the example, these four first device regions are arranged in a row, and the row direction of the first device regions is parallel to the aforementioned recess direction. This row direction can also be parallel to the aforementioned length direction; this embodiment of the application does not limit this.

[0164] For example, such as Figure 28 As shown, at least one first device region in a device having a diaphragm includes: a plurality of first device regions arranged in at least two rows. Figure 28 Taking eight first device regions arranged in two rows as an example, each row includes four first device regions. The first device regions of the same order in any two adjacent rows are staggered, for example... Figure 28The first device region in the first row of the first device region is arranged alternately with the first device region in the second row of the first device region. Additionally, Figure 28 The row direction of the first device region is parallel to the aforementioned length direction F1. This row direction can also be parallel to the recess direction, but this embodiment does not limit this.

[0165] Furthermore, in the above embodiments, the device with a diaphragm includes at least one first device region, and the device with a diaphragm may also include at least one second device region. The structure of the second device region is similar to that of the first device region, but the orthographic projection shape of the cavity in the second device region is different from that of the cavity in the first device region on the reference plane.

[0166] For example, the structure of the second device region can be as follows: Figure 29 and Figure 30 As shown, in a second device region: the substrate layer 01 has a second cavity K2, the shape of the second orthographic projection of the second cavity K2 on the reference plane M is different from the shape of the first orthographic projection; the orthographic projection of the second diaphragm region of the diaphragm layer 02 on the reference plane M overlaps with the second orthographic projection, and at least a portion of the second diaphragm region is capable of converting electrical energy into mechanical energy.

[0167] When a device with a diaphragm includes a first device region and a second device region, the vibration modes of the diaphragm in the first device region are different from those in the second device region, and the vibration modes of the diaphragm in these two device regions can be coupled, thereby further improving the bandwidth of the device.

[0168] The shape of the second orthographic projection differs from that of the first orthographic projection. For example, the second orthographic projection can be a convex shape. For instance, the second orthographic projection can be circular, rectangular, elliptical, etc. This application does not limit this aspect. Figure 29 and Figure 30 Taking a circular second orthographic projection as an example. Optionally, the second orthographic projection can also be a concave shape. For example, the second orthographic projection may also have a concavity in the direction perpendicular to the maximum length. This application does not limit this aspect.

[0169] Optionally, when the device with a diaphragm includes at least one first device region and at least one second device region, the at least one first device region and the at least one second device region are arranged in an array. Furthermore, the first device region and the second device region are staggered in at least one of the row and column directions of the array. Figure 31 As shown, the device with a diaphragm includes two first device regions and three second device regions. The two first device regions and the three second device regions are arranged in a row, and the first device regions and the second device regions are arranged alternately in the row direction of the array, which is parallel to the concave direction.

[0170] Furthermore, devices with diaphragms may also include connection regions (such as...). Figure 26 , Figure 27 , Figure 28 and Figure 31 The region excluding the first device region and the second device region. The first electrode layer and the second electrode layer within the connection region are used to connect the first electrode layer and the second electrode layer outside the connection region. For example, the first electrode layer and the second electrode layer within the connection region are used to connect the first electrode layer and the second electrode layer within the aforementioned first device region (or the first device region and the second device region). Furthermore, for each device region in at least one first device region and at least one second device region, the first electrode layer and the second electrode layer within that device region are insulated.

[0171] For different device regions within at least one first device region and at least one second device region, the first electrode layers in the different device regions can be connected together, and the second electrode layers in the different device regions can be connected together, so that the different device regions are connected in parallel; or, the first electrode layer in one device region is connected to another second electrode layer, so that the different device regions are connected in series; or, a portion of the device regions are connected in parallel and another portion of the device regions are connected in series. This application does not limit the connection method of different device regions; this application embodiment takes the parallel connection of different device regions as an example.

[0172] In addition, the aforementioned device regions can also be connected to the external circuitry of the device (such as a control circuit for controlling the device) via metal leads.

[0173] Furthermore, within a device region (such as a first device region or a second device region) of the device with a diaphragm, for any one of at least one film layer (such as individual film layers) of the device with a diaphragm: the orthographic projection of that film layer onto the reference plane has at least one of a first axis of symmetry and a second axis of symmetry. The first axis of symmetry is parallel to the length direction, and the second axis of symmetry is parallel to the concave direction. Figure 1 Taking the first electrode layer 021 in the example, as Figure 32 As shown, the orthographic projection of the first electrode layer 021 onto the reference plane has a first axis of symmetry L1 and a second axis of symmetry L2.

[0174] Optionally, when the at least one film layer comprises at least two film layers, within the device region, the first axes of symmetry of the orthographic projections of the at least two film layers onto the reference plane are collinear, and / or, the second axes of symmetry of the orthographic projections of the at least two film layers onto the reference plane are collinear. For example, within the first device region, the orthographic projections of each film layer in the device with the diaphragm all have a first axis of symmetry and a second axis of symmetry on the reference plane, and the first axes of symmetry of the orthographic projections of each film layer onto the reference plane are collinear, and the second axes of symmetry of the orthographic projections of each film layer onto the reference plane are also collinear.

[0175] Within the aforementioned device region, the orthographic projection of each film layer of the device with a diaphragm onto the reference plane may not have an axis of symmetry, and the parallel axes of symmetry of the orthographic projections of the various film layers onto the reference plane may not be collinear. This application does not limit this.

[0176] Furthermore, the orthographic projection of the cavities (such as all cavities) in the diaphragm-equipped device onto the reference plane is centrally symmetric. This allows the diaphragm-equipped device to have excellent out-of-plane acoustic beam directivity, enabling the emitted sound waves to be more concentrated and improving the device's performance. When the diaphragm-equipped device includes at least one first cavity and / or at least one second cavity, the orthographic projection of the entire assembly of these cavities onto the reference plane is centrally symmetric. Of course, the orthographic projection of the entire assembly of all cavities in the diaphragm-equipped device onto the reference plane may not be centrally symmetric; this embodiment does not limit this.

[0177] When a device with a diaphragm comprises multiple device regions, the smaller the spacing between the cavities of adjacent device regions (such as the first cavity and the second cavity mentioned above), the larger the bandwidth of the device. The size of this spacing generally depends on the process limits, and therefore can be designed within the range of process limits according to the required device bandwidth.

[0178] When a device with a diaphragm comprises multiple device regions arranged in an array, the dimensions of the array in both the row and column directions can be designed according to the application scenario. For example, when the device is used for ultrasound imaging, the dimensions of the array in the column direction can be determined to avoid beam sidelobes and beam grating lobes in ultrasound imaging. For instance, when the array comprises one row and multiple columns, the dimensions of the array in the column direction should not exceed 1.5 times the wavelength corresponding to the center frequency of the sound wave emitted by the device. When the device is used for ultrasound imaging, the dimensions of the array in the row direction can be determined based on the range and depth of the ultrasound imaging.

[0179] It should be noted that the various first device regions and second device regions provided in the embodiments of this application can all be arranged in an array. Figure 26 , Figure 27 , Figure 28 and Figure 31 This application uses only a few device region array arrangements provided in its embodiments as examples. Additionally, this application embodiment uses a device with a diaphragm comprising a set of stacked layers, wherein the set of stacked layers includes a first electrode layer, an electrode insulating layer, and a second electrode layer. Optionally, the device may also include multiple sets of stacked layers; this application embodiment does not limit this.

[0180] Furthermore, based on the diaphragm-equipped device provided in the foregoing embodiments, the device may further include a polymer layer in the first device region and / or the second device region. In the first or second device region, the polymer layer wraps around the portion of the device region excluding the polymer layer on at least one side perpendicular to the length direction and the recess direction. For example, the polymer layer may be made of polydimethylsiloxane (PDMS), polyimide (PI), etc. The polymer layer can increase the external environmental damping of the diaphragm-equipped device. Since the greater the external environmental damping, the greater the bandwidth of the diaphragm-equipped device, the bandwidth (especially the transmission bandwidth) of the diaphragm-equipped device provided in this application embodiment can be further increased. It is understood that the diaphragm-equipped device may also not include the aforementioned polymer layer, and this application embodiment does not limit this.

[0181] In the above embodiments, the electrode insulating layer in the diaphragm layer is made of piezoelectric material, and the first electrode layer, electrode insulating layer, second electrode layer, and substrate layer are stacked sequentially. In this case, referring to the accompanying drawings of the foregoing embodiments, the diaphragm layer 02 may also include a support layer 024, with the first electrode layer 021, electrode insulating layer 022, second electrode layer 023, support layer 024, and substrate layer 01 stacked sequentially. The support layer 024 may include one material layer or multiple material layers. For example, the support layer 024 may include a stacked non-insulating material layer and an insulating material layer (not shown in the drawings), and the second electrode layer 022, the insulating material layer, and the non-insulating material layer may be stacked sequentially. The material of the insulating material layer may include, but is not limited to, monocrystalline silicon, polycrystalline silicon, silicon nitride, silicon dioxide, etc. The support layer 024 may also include the insulating material layer but not the non-insulating material layer.

[0182] It is understandable that when the electrode insulating layer 022 is made of a piezoelectric material, the first electrode layer 021, the electrode insulating layer 022, the second electrode layer 023, and the substrate layer 01 do not necessarily have to be stacked sequentially. The electrode insulating layer 022 may also not be made of a piezoelectric material.

[0183] For example, such as Figure 33As shown, when the electrode insulating layer 022 is made of a piezoelectric material, the diaphragm layer 02 also includes a support layer 024 superimposed on the base layer 01. The first cavity K1 penetrates the base layer 01 on the side near the diaphragm layer 02. The first electrode layer 021, the electrode insulating layer 022, and the second electrode layer 023 within the first device region are all located within the first cavity K1 and are sequentially superimposed on the support layer 024 on the side near the base layer 01 along the direction close to the base layer 01. In this case, the first electrode layer 021, the electrode insulating layer 022, the second electrode layer 023, the support layer 024, and the base layer 01 can all be referred to the description in the foregoing embodiments, and will not be repeated here in the embodiments of this application.

[0184] For example, such as Figure 34 As shown, the electrode insulating layer 022 is made of a non-piezoelectric material, and the first electrode layer 021, electrode insulating layer 022, substrate layer 01, and second electrode layer 023 are stacked sequentially. In this case, the first electrode layer 021, electrode insulating layer 022, second electrode layer 023, and substrate layer 01 can all refer to the description in the foregoing embodiments, and will not be repeated here.

[0185] For example, such as Figure 35 As shown, the electrode insulating layer 022 is made of a non-piezoelectric material. The electrode insulating layer 022, the base layer 01, and the second electrode layer 023 are stacked sequentially. The first cavity K1 penetrates the base layer 01 near the diaphragm layer 02. The first electrode layer 021 is located within the first cavity K1 and is stacked on the electrode insulating layer 022 near the base layer 01. In this case, the first electrode layer 021, the electrode insulating layer 022, the second electrode layer 023, and the base layer 01 can all be referred to the description in the foregoing embodiments, and will not be repeated here.

[0186] It can be seen that the electrode insulating layer can be made of piezoelectric material or non-piezoelectric material.

[0187] On the one hand, when the electrode insulating layer is made of a piezoelectric material, the device with a diaphragm can be a piezoelectric device. The device uses the first electrode layer and the second electrode layer to apply an electrical signal to the electrode insulating layer, causing the electrode insulating layer to deform, which in turn causes the diaphragm layer to vibrate under the action of the electrical signal. When the diaphragm layer vibrates, the electrode insulating layer deforms, and the device can use the first electrode layer and the second electrode layer to collect the electrical signal generated by the vibration of the diaphragm layer.

[0188] On the other hand, when the electrode insulating layer is made of a non-piezoelectric material, the device with a diaphragm can be a capacitive device. This device uses a first electrode layer and a second electrode layer to apply an electrical signal, causing a change in the capacitance between the first and second electrode layers, thereby causing the entire diaphragm layer to vibrate under the influence of the capacitance. As the diaphragm layer vibrates, the capacitance changes, and the device can use the first and second electrode layers to collect the magnitude of this capacitance, thus obtaining the electrical signal generated by the diaphragm layer's vibration.

[0189] Optionally, when the device with a diaphragm provided in the embodiments of this application is an ultrasonic transducer, the ultrasonic transducer may be a piezoelectric ceramic ultrasonic transducer, a capacitive micromechanical ultrasonic transducer (CMUT), or a piezoelectric micromechanical ultrasonic transducer (PMUT), and the embodiments of this application do not limit this. Among them, the piezoelectric ceramic ultrasonic transducer and the piezoelectric micromechanical ultrasonic transducer are piezoelectric devices, and the capacitive micromechanical ultrasonic transducer is a capacitive device.

[0190] The electrode insulating layer in piezoelectric ceramic ultrasonic transducers typically uses lead zirconate titanate (PZT) piezoelectric ceramic material, perovskite-phase structure lead magnesium titanate magnesium niobate (PMN-PT) single crystal material, or piezoelectric composite material. Piezoelectric ceramic ultrasonic transducers and piezoelectric micromechanical ultrasonic transducers can be collectively referred to as micromechanical ultrasonic transducers (MUTs). The vibration mode of the MUT is a bending vibration mode, which has the advantage of low acoustic impedance. Therefore, an external acoustic impedance matching layer is not required for the MUT, simplifying its packaging. Furthermore, the MUT can be mass-produced using semiconductor processes, resulting in low manufacturing costs. Additionally, the MUT can be integrated with the control circuitry, facilitating electrical connection between the MUT and the control circuitry, while also exhibiting low parasitic capacitance and a high signal-to-noise ratio. Moreover, in PMUTs, the two electrode layers used to apply electrical signals to the electrode insulating layer do not require high DC bias or extremely small gaps, making PUMT fabrication simpler and offering advantages such as high operational linearity.

[0191] Optionally, the device with a diaphragm provided in the embodiments of this application can be a micro-electro-mechanical system (MEMS) device. Of course, the device may not be a MEMS device, and the embodiments of this application do not limit it in this regard.

[0192] Furthermore, when manufacturing the diaphragm-equipped device provided in this application embodiment, each film layer in the device can be formed sequentially. When a certain film layer has a pattern, the material layer of that film layer can be formed first, and then the material layer can be patterned to obtain the film layer.

[0193] Based on the diaphragm-equipped device provided in the embodiments of this application, this application also provides an electronic device, including: a control circuit, and any of the diaphragm-equipped devices provided in the embodiments of this application. The control circuit is connected to the diaphragm layer in the diaphragm-equipped device, and the control circuit is used to control the diaphragm layer to perform electrical energy and mechanical energy conversion.

[0194] For example, the control circuit can be electrically connected to the first and second electrode layers in the diaphragm layer. The control circuit can apply electrical signals to these two electrode layers to drive the diaphragm layer to convert electrical energy into mechanical energy. The control circuit can also use these two electrode layers to receive electrical signals generated by the vibration of the diaphragm layer.

[0195] The control circuit can be a field-programmable gate array (FPGA) or other circuits with control functions.

[0196] Optionally, the electronic device may include, for example, Figure 36 The ultrasonic probe shown includes a control circuit, an analog front end (AFE) circuit, a diaphragm-equipped device as provided in this embodiment, and an acoustic lens. The acoustic lens is located on the side of the diaphragm-equipped device that emits sound waves. The control circuit is connected to the diaphragm-equipped device via the AFE circuit. The AFE circuit includes a pulse generator, an analog-to-digital converter (ADC), a filter, a low-noise amplifier (LNA), a temporal gain control (TGC) circuit, and a switch. The control circuit, pulse generator, switch, and diaphragm-equipped device are connected sequentially, as are the diaphragm-equipped device, switch, TGC circuit, LNA, filter, ADC, and control circuit. When emitting sound waves, the switch in the AFE circuit is connected to the pulse generator, and the control circuit can apply an electrical signal to the diaphragm-equipped device via the pulse generator and switch to cause the diaphragm-equipped device to emit sound waves. When detecting external sound waves, the switch in the AFE circuit is connected to the TGC circuit. The control circuit can receive the electrical signal generated by the diaphragm-equipped device detecting the received sound wave through the switch, TGC circuit, LNA, filter, and ADC. The acoustic lens can protect the diaphragm-equipped device and focus the sound beam.

[0197] In addition, Figure 36 In the ultrasonic probe shown, the device with the diaphragm can be located on the PCB board. Figure 36(Not shown in the image) It is electrically connected to the PCB board via metal wire bonding, and then electrically connected to the switch via the PCB board. Alternatively, the device with a diaphragm can be located on a complementary metal-oxide-semiconductor (CMOS) wafer. Figure 36 (Not shown in the image) and electrically connected to the aforementioned switch via a CMOS chip.

[0198] Furthermore, Figure 36 The electronic device containing the ultrasonic probe shown may also include other components. Figure 36 (Not shown in the image), the control circuit in the ultrasonic probe can be controlled via an input / output (I / O) interface (…). Figure 36 (Not shown) Connects to other components. This I / O interface can be a high-speed serial computer expansion bus standard (peripheral component interconnect express, PCIe) interface, universal serial bus (USB) interface, wireless network communication technology (Wi-Fi) interface, etc.

[0199] For example, the electronic device also includes a display screen. Figure 36 (Not shown in the image), the ultrasonic probe can be connected to the display screen, either via cable or wirelessly. The display screen can show the electrical signals of the ultrasonic waves detected by the control circuit. Alternatively, the electronic device may also include a processing platform, where the control circuit can transmit the electrical signals generated by the received sound waves to the processing platform for processing.

[0200] In this application, the terms "first" and "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "at least one" refers to one or more, and "multiple" refers to two or more, unless otherwise expressly defined. The term "and / or" in this invention is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Furthermore, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0201] In the corresponding embodiments provided in this application, it should be understood that the disclosed structures can be implemented through other configurations. For example, the embodiments described above are merely illustrative.

[0202] The above description is merely an optional implementation of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A device having a diaphragm, characterized in that, Includes: a base layer and a diaphragm layer; the device having a diaphragm includes at least one first device region, within which: The base layer has a first cavity, and the first cavity has a target depression on at least one side of a first orthographic projection on a reference plane parallel to the base layer in the depression direction; The direction of the depression is perpendicular to the direction of the maximum length of the first orthographic projection, and the length of the first orthographic projection in the direction of the depression is less than the maximum length; The first orthographic projection includes at least two first convex graphic regions connected sequentially along the direction of the maximum length, the target depression is located between adjacent first convex graphic regions, and the at least two first convex graphic regions have the same shape and area; The diaphragm layer covers the first cavity, and the orthographic projection of the first diaphragm region of the diaphragm layer on the reference plane overlaps with the first orthographic projection. At least a portion of the first diaphragm region is capable of converting electrical energy into mechanical energy, and the first diaphragm region has coupled multi-order vibration modes when converting electrical energy into mechanical energy.

2. The device with a diaphragm according to claim 1, characterized in that, The at least one side includes: the two opposite sides of the first orthographic projection in the concave direction.

3. The device with a diaphragm according to claim 1 or 2, characterized in that, On each of the at least one side, there is a target depression between every two adjacent first convex graphic regions.

4. The device with a diaphragm according to claim 3, characterized in that, The first convex graphic region is a circle with a gap close to the adjacent first convex graphic region.

5. The device with a diaphragm according to claim 3, characterized in that, The first orthographic projection further includes: a second convex graphic region corresponding to the target depression; two adjacent first convex graphic regions of the target depression are connected through the second convex graphic region corresponding to the target depression.

6. The device with a diaphragm according to claim 5, characterized in that, The second convex graphic region is rectangular.

7. The device with a diaphragm according to claim 1 or 2, characterized in that, The diaphragm layer comprises: a first electrode layer, an electrode insulating layer, and a second electrode layer; the diaphragm layer satisfies any of the following conditions: The electrode insulating layer is made of piezoelectric material, and the first electrode layer, the electrode insulating layer, the second electrode layer and the substrate layer are stacked sequentially. The electrode insulating layer is made of piezoelectric material. The diaphragm layer also includes a support layer superimposed on the base layer. The first cavity penetrates the base layer on the side near the diaphragm layer. The first electrode layer, the electrode insulating layer and the second electrode layer in the first diaphragm region are all located in the first cavity and are sequentially superimposed on the side of the support layer near the base layer in a direction away from the support layer. The electrode insulating layer is made of a non-piezoelectric material, and the first electrode layer, the electrode insulating layer, the substrate layer and the second electrode layer are stacked sequentially. Furthermore, the electrode insulating layer is made of a non-piezoelectric material, and the electrode insulating layer, the base layer, and the second electrode layer are stacked sequentially. The first cavity penetrates the base layer on the side near the diaphragm layer, and the first electrode layer is located within the first cavity and is stacked on the electrode insulating layer on the side near the base layer.

8. The device with a diaphragm according to claim 7, characterized in that, Within the first device region, the overlapping area of ​​the orthographic projections of the first electrode layer, the electrode insulating layer, and the second electrode layer onto the reference plane includes: at least two third convex pattern regions arranged sequentially along the direction of the maximum length, wherein the target depression is located between adjacent third convex pattern regions. The at least two third convex graphic regions are spaced apart; Alternatively, the at least two third convex graphic regions are connected, and the connection point of adjacent third convex graphic regions is recessed into the overlapping region.

9. The device with a diaphragm according to claim 8, characterized in that, The at least two third convex graphic regions are connected, and the overlapping region further includes a fourth convex graphic region for connecting adjacent third convex graphic regions.

10. The device with a diaphragm according to claim 7, characterized in that, Within the first device region, the outer edge of the orthographic projection of the electrode insulating layer onto the reference plane is located inside the outer edge of the first orthographic projection.

11. The device with a diaphragm according to claim 8 or 9, characterized in that, Within the first device region, the orthographic projection of the electrode insulating layer on the reference plane at least partially overlaps with the first orthographic projection, and the outer edge of the orthographic projection of the electrode insulating layer on the reference plane is not located inside the outer edge of the first orthographic projection. In the first electrode layer and the second electrode layer within the first device region, one electrode layer has a cutout, while the other electrode layer and the electrode insulating layer do not have cutouts. The overlapping region further includes: a peripheral region; the peripheral region surrounds the at least two third convex graphic regions and is spaced apart from the at least two third convex graphic regions, and the orthographic projection of the hollow in the electrode layer on the reference plane is located between the peripheral region and the third convex graphic regions; the peripheral region and the third convex graphic regions are respectively the orthographic projections of regions with opposite stresses in the diaphragm layer on the reference plane.

12. The device with a diaphragm according to claim 11, characterized in that, The outer region includes at least two enclosing regions connected sequentially along the direction of the maximum length; The at least two enclosing regions correspond one-to-one with the at least two third convex graphic regions. The enclosing regions enclose the corresponding third convex graphic regions, and the connection points of adjacent enclosing regions are recessed into the overlapping regions.

13. The device with a diaphragm according to claim 1 or 2, characterized in that, Within the first device region, the diaphragm layer includes a first sub-region and a second sub-region with different vibration center frequencies, and the target recess is located between the orthographic projection of the first sub-region onto the reference plane and the orthographic projection of the second sub-region onto the reference plane.

14. The device with a diaphragm according to claim 1 or 2, characterized in that, The at least one first device region includes a plurality of first device regions arranged in an array.

15. The device with a diaphragm according to claim 1 or 2, characterized in that, The at least one first device region is arranged in at least two rows, and the first device regions in the same order in any two adjacent rows are staggered.

16. The device with a diaphragm according to claim 14, characterized in that, The row direction of the first device region is parallel to the direction of the maximum length or the direction of the recess.

17. The device with a diaphragm according to claim 1 or 2, characterized in that, The device with a diaphragm further includes at least one second device region, wherein within one of the second device regions: The base layer has a second cavity, and the shape of the second orthographic projection of the second cavity on the reference plane is different from the shape of the first orthographic projection. The orthographic projection of the second diaphragm region of the diaphragm layer onto the reference plane overlaps with the second orthographic projection, and at least a portion of the second diaphragm region is capable of converting electrical energy into mechanical energy.

18. The device with a diaphragm according to claim 1 or 2, characterized in that, The base layer includes a body layer and a base insulating layer, the first cavity penetrates the body layer and the base insulating layer, and the diaphragm layer, the base insulating layer and the body layer are stacked sequentially.

19. The device with a diaphragm according to claim 1 or 2, characterized in that, The device with a diaphragm is a transducer, resonator, or filter.

20. An electronic device, characterized in that, include: Control circuit, and the device with a diaphragm as described in any one of claims 1 to 19; The control circuit is connected to the diaphragm layer in the device with a diaphragm, and the control circuit is used to control the diaphragm layer to convert electrical energy into mechanical energy.

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