Chemical reaction source supply system and semiconductor processing device

Abstract

The present invention provides a chemical reaction source supply system, comprising: a reaction source container, a heating cabinet, a reaction source supply pipeline, a first control valve, a heating device and a cooling device, the reaction source container is located in the heating cabinet, and the interior of the heating cabinet is in an atmospheric pressure environment; the bottom valve body of the first control valve is arranged inside the heating cabinet, and the working temperature is ≥200°C; the actuator of the first control valve is arranged outside the heating cabinet, and the working temperature of the actuator is ≤120°C; the heating device comprises a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet, and is used to heat the reaction source container, and the second heating unit is arranged outside the heating cabinet, and is used to heat the heating cabinet; the cooling device is arranged outside the heating cabinet. The improved structural design of the present invention greatly simplifies the structure of the entire system, greatly reduces the volume, and can significantly reduce the use and maintenance costs. Using the semiconductor processing device provided by the present invention helps to reduce production costs.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a chemical reaction source supply system and a semiconductor processing device. Background Art

[0002] Semiconductor thin film deposition equipment usually uses liquid sources or solid sources as reaction sources. Among them, the supply and transportation of solid sources is one of the key technical difficulties of semiconductor thin film deposition. Since solids do not have fluidity like liquids and have a relatively low saturated vapor pressure, they need to be heated to about 200°C. Therefore, in the solid chemical reaction source supply system (solid distribution system, referred to as SDS), the uniformity of heating has a crucial impact on whether the solid source can be stably supplied. In order to allow the reaction source container to be heated evenly without dead ends, the usual practice is to place the reaction source container and control valves and other components in a vacuum environment with a certain pressure. Too high or too low pressure will make the ambient temperature around the reaction source container unstable. Therefore, in order to maintain a vacuum environment, a closed vacuum cabinet is required to place the reaction source container, equipped with a vacuum pump and sealing components such as O-rings and flanges, and a sealed channel is designed for the entry and exit of gas pipelines and electric heating wires. In addition, the valves placed in the vacuum cabinet need to withstand high temperatures above 220°C, so a more expensive high-temperature DH valve needs to be selected. These designs greatly increase the cost and maintenance difficulty of existing SDS.

[0003] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a chemical reaction source supply system and a semiconductor processing device, which are used to solve the problems in the prior art that the reaction source container and control valve and other components are placed in a closed vacuum cabinet for heating as a whole, which is relatively complicated. Moreover, since all kinds of valve parts are arranged in the heating cabinet, high-cost high-temperature resistant valves must be used, which increases the cost and maintenance difficulty of the chemical reaction source supply system.

[0005] To achieve the above-mentioned and other related purposes, the present invention provides a chemical reaction source supply system, which comprises: a reaction source container, a heating cabinet, a reaction source supply pipeline, a first control valve, a heating device and a cooling device, wherein:

[0006] The reaction source container is arranged in the heating cabinet for accommodating the chemical reaction source, and the interior of the heating cabinet is in an atmospheric pressure environment;

[0007] The first control valve is disposed above the reaction source container and on a reaction source supply pipeline connected to the reaction source container, and is used to control the supply of the chemical reaction source in the reaction source container;

[0008] The bottom valve body of the first control valve is arranged inside the heating cabinet, the working temperature of the bottom valve body is ≥200°C, the actuator of the first control valve is arranged outside the heating cabinet, the actuator is used to control the opening and closing of the bottom valve body, and the working temperature of the actuator is ≤120°C;

[0009] The heating device includes a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet and is used to heat the reaction source container, and the second heating unit is arranged outside the heating cabinet and is used to heat the heating cabinet;

[0010] The cooling device is arranged outside the heating cabinet.

[0011] Optionally, the first heating unit includes heating plates respectively contacting the bottom and the top of the reaction source container, and the second heating unit includes a heating belt arranged outside the heating cabinet.

[0012] Optionally, the chemical reaction source supply system further comprises a heat insulating layer, which is arranged outside the heating cabinet, close to the heating belt and away from the outer surface of the heating cabinet.

[0013] Optionally, the chemical reaction source supply system further includes a reflection plate arranged on the inner surface of the heating cabinet.

[0014] Optionally, the chemical reaction source supply system also includes a second control valve, which is arranged on a reaction source supply pipeline connected to the reaction source container. The second control valve adopts the same setting method as the first control valve, or the second control valve is placed outside the heating cabinet.

[0015] In an optional solution, when the second control valve is disposed outside the heating cabinet, the second control valve includes a non-high-temperature valve, and the chemical reaction source supply system further includes a heating unit for heating the second control valve.

[0016] In another optional solution, the first control valve includes an ALD valve; the chemical reaction source supply system also includes a heat dissipation device disposed outside the heating cabinet for dissipating heat from an actuator of the first control valve.

[0017] Optionally, at least one internal channel for accommodating a chemical reaction source is disposed inside the reaction source container, and a carrier gas inlet of the reaction source container is connected to the internal channel.

[0018] Optionally, the heating device further includes a third heating unit and / or a fourth heating unit, the third heating unit is located on a gas outlet pipeline connected to a gas outlet of the reaction source container, and the fourth heating unit is used to heat the carrier gas pipeline.

[0019] The present invention also provides a semiconductor processing device, which includes a process chamber for semiconductor processing and a chemical reaction source supply system as described in any of the above schemes, wherein the process chamber is provided with an air inlet and an air outlet, the air inlet of the process chamber is connected to the air outlet of the reaction source container, and the air outlet of the process chamber is connected to an exhaust pipe.

[0020] As described above, the chemical reaction source supply system and semiconductor processing device of the present invention have the following beneficial effects: the chemical reaction source supply system provided by the present invention sets the bottom valve body of the first control valve in the heating cabinet and the actuator outside the heating cabinet, and sets heating devices inside and outside the heating cabinet, so that the inside and outside of the heating cabinet are in completely different temperature environments, which can reduce the working temperature of the actuator while meeting the heating temperature of the reaction source container, and extend the service life of the first control valve. At the same time, because the actuator of the first control valve does not need to work in a high temperature environment, the first control valve does not need to use a high temperature valve such as a DH valve, which can reduce the system cost; the interior of the heating cabinet is in an atmospheric pressure environment, and the heating device is cleverly set to ensure that the reaction source container in the heating cabinet is at an ideal reaction source heating temperature, and the reaction source container can be uniformly heated without using sealing components such as vacuum pumps and flanges. The improved structural design of the present invention greatly simplifies the structure of the entire system, greatly reduces the volume, and significantly reduces the use and maintenance costs. Using the semiconductor processing device provided by the present invention helps to reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figures 1 to 3 Shown are structural schematic diagrams of the chemical reaction source supply system provided by the present invention in different examples.

[0022] Figure 4 Shown is an exemplary top view of the bottom surface of the reaction source container provided by the present invention.

[0023] Figure 5 Shown is a schematic diagram of an exemplary cross-sectional structure of a semiconductor processing device provided by the present invention. DETAILED DESCRIPTION

[0024] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0025] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0026] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0027] It should be noted that the diagrams provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed arbitrarily, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0028] The existing SDS (solid distribution system, chemical reaction source supply system) requires a vacuum cabinet to maintain the uniform and stable temperature of the environment around the reaction source container. To this end, the SDS is usually composed of the following parts: a reaction source container, a pneumatic valve installed above the container for controlling the supply of solid sources (need to be resistant to high temperatures above 220°C), a vacuum cabinet for accommodating all the aforementioned components, and a heater for heating the container and the entire vacuum cabinet respectively. The vacuum cabinet is externally connected to a vacuum pump to keep the pressure inside the cabinet between 3Torr-6Torr, so as to maintain a stable and uniform heating environment around the reaction source container. In addition, the internal and external connecting lines and / or pipelines such as the heating wire line and the gas pipeline in and out of the reaction source container need to pass through a dedicated sealing component to enter the vacuum cabinet. These structures make the existing SDS bulky, complex in structure, and the cost required for manufacturing and maintenance is high. To this end, the present invention proposes an improvement plan.

[0029] Specifically, Figure 1 As shown, the present invention provides a chemical reaction source supply system 100, and the chemical reaction source supply system 100 includes: a reaction source container 11, a heating cabinet 12, a reaction source supply pipeline and a first control valve 13. The reaction source container 11 is used to accommodate a chemical reaction source, which is usually a solid source. The reaction source container 11 is arranged in the heating cabinet 12, and the interior of the heating cabinet 12 is in an atmospheric pressure environment. That is, the heating cabinet 12 and the reaction source container 11 do not work in a vacuum state, so there is no need to use sealing components such as flanges for sealing the cabinet body and components such as vacuum pumps for evacuating the cabinet body as in the prior art. That is, the chemical reaction source supply system provided in this embodiment is preferably not provided with a vacuum sealing device such as a vacuum pump, which makes it possible to have more choices for fixing the various source lines that are inserted inside and outside the heating cabinet without considering sealing and other issues.

[0030] The first control valve 13 is arranged above the reaction source container 11 and is arranged on the reaction source supply pipeline connected to the reaction source container 11. In some examples, the reaction source container 11 includes a container base and a cover body, and the container base is provided with an internal channel for placing a chemical reaction source, and the first control valve 13 is arranged on the cover body, and is connected to the inside of the reaction source container 11 through the inlet and outlet channels of the cover body. The first control valve 13 is used to control the supply of the chemical reaction source. In the embodiment provided by the present invention, the bottom valve body of the first control valve 13 is arranged inside the heating cabinet 12, and the working temperature of the bottom valve body is ≥200°C. The actuator on the upper part of the first control valve 13 is arranged outside the heating cabinet 12. The actuator is used to control the opening and closing of the bottom valve body, and the operating temperature of the actuator is ≤120°C. In other words, the actuator of the first control valve 13 does not need to work in a high temperature environment. This gives the first control valve 13 more options. For example, the first control valve 13 can use a relatively lower cost ALD valve. The actuator no longer works in a high-temperature environment, and its service life and stability can be improved, which helps to improve system stability while reducing system costs. In existing SDS, since the control valve that controls the supply of the reaction source is completely located in a high-temperature vacuum cabinet, high-temperature valves such as DH valves must be used. Moreover, since the control valve is in a high-temperature working environment for a long time, its service life is reduced, which increases the overall cost of the system.

[0031] In this embodiment, the chemical reaction source supply system 100 further includes a heating device, which includes a first heating unit 141 and a second heating unit 142; the first heating unit 141 is disposed in the heating cabinet 12, and is used to heat the reaction source container 11. The second heating unit 142 is disposed outside the heating cabinet 12, and is used to heat the heating cabinet 12. By designing the heating units located inside and outside the heating cabinet 12, the reaction source container 11 located in the heating cabinet 12 can be heated uniformly and stably.

[0032] In addition, in this embodiment, a cooling device (not shown) is further provided outside the heating cabinet 12. The cooling device is, for example, a cooling pipeline provided in a groove on the outer surface of the cabinet, and the cooling pipeline can be filled with cooling water, cooling gas, phase change inhibition material and other cooling media, or other cooling methods such as semiconductor cooling sheets mounted on the outer surface of the heating cabinet. The cooling device is used to quickly cool the cabinet when replacing or maintaining the reaction source container to ensure operation safety.

[0033] The chemical reaction source supply system provided in this embodiment has an improved structural design, and the overall structure is greatly simplified and the volume is significantly reduced. Not only can the use and maintenance costs be significantly reduced, but also because it occupies a small space, the system installation position can be flexibly adjusted according to production needs to meet different process requirements in semiconductor factories.

[0034] However, the existing SDS is large in size and the vacuum equipment it requires must be used in conjunction with other factory facilities. Therefore, the location of the SDS cannot be changed after it is designed when the factory is built, which causes many inconveniences.

[0035] As mentioned above, the heating device includes a first heating unit 141 for heating the reaction source container 11. The reaction source is preferably a powder. By heating the reaction source container 11, the kinetic energy of the reaction source molecules in the reaction source container 11 is increased, and then the reaction source molecules are taken out by a carrier gas such as nitrogen. And the higher the temperature, the more powder small molecules are taken out by the carrier gas, and the more evenly dispersed, which is conducive to improving the deposition uniformity. In order to maximize the heating uniformity of the reaction source container 11, the first heating unit 141 needs to cover the entire reaction source container 11 as much as possible. For example, in some examples, the reaction source container 11 can be placed in a constant temperature bath, but the heating temperature of the constant temperature bath is limited, and it is difficult to meet the evaporation temperature requirements of the solid source in the reaction source container 11. Therefore, in the preferred example provided by the present invention, the first heating unit 141 for heating the reaction source container 11 includes a heating plate that contacts the bottom and top of the reaction source container 11 respectively, and the heating plate preferably covers the entire surface of the reaction source container 11. The heating plate can be an integral body, for example, it is a sleeve structure, and the reaction source container 11 is placed therein as a whole. The heating plate can also be composed of independent multiple plates, for example, at least including a portion covering the container cover. The heating plate is preferably a stainless steel plate with a heating wire distributed inside, and a temperature control device (not shown) connected to the heating plate can also be provided. In other examples, the heating medium in the heating plate can also be a fluid, for example, a gas or a liquid. When the heating medium is a fluid, the reaction source container 11 is preferably placed in the first heating unit 141 by a bracket support. In contrast, heating with a heating plate with a heating wire distributed inside can make the overall structure of the system more concise and easier to control the heating temperature.

[0036] As an example, the second heating unit 142 includes a heating belt that surrounds the entire heating cabinet 12. The heating belt is preferably, but not limited to, a flexible heating belt such as a silicone belt with a resistance wire disposed therein, so that the heating cabinet 12 can be more fully covered. Similarly, a temperature control device (not shown) connected to the second heating unit 142 can be provided.

[0037] The first control valve 13 controls the on and off of the chemical reaction source of the reaction source container 11, and generally includes an air inlet valve and an air outlet valve, etc., and the number thereof can be set as needed, and there is no strict restriction on this. The actuators on the upper part of these first control valves 13 are all located outside the heating cabinet 12. Therefore, compared with the design in the prior art in which the valve parts such as pneumatic valves are located as a whole inside the heating cabinet, the volume of the heating cabinet 12 used in the present invention can be significantly reduced. Accordingly, the space inside the heating cabinet 12 except for the reaction source container 11 is greatly reduced, and the difficulty of maintaining the stability of the internal ambient temperature of the heating cabinet 12 is significantly reduced. The heating cabinet 12 for heating the reaction source container 11 only covers the reaction source container 11 and the connecting part between the reaction source container 11 and the control valve 13 (usually only the valve body part of about 25mm-35mm at the lower part of the first control valve 13). The actuator in the first control valve 13 that is not resistant to high temperatures, including the valve stem, valve stem nut, valve disc, pneumatic control mechanism, electric control mechanism and other parts located on the upper part of the diaphragm of the first control valve 13, are located outside the heating cabinet 12. These structural parts do not need to work in a high temperature environment, so the first control valve 13 does not need to use high-cost high-temperature resistant valves such as DH valves.

[0038] In a preferred example, the first control valve 13 is preferably an ALD valve. The ALD valve is not only cheaper than high-temperature valves such as DH valves, but also has the advantages of long service life, fast start-up speed, high flow coefficient, etc., and can be used in conjunction with thermal actuators, position sensors and solenoid valves to achieve excellent performance in atomic layer deposition applications. Of course, the first control valve 13 is not limited to this.

[0039] In some examples, such as Figure 2 As shown, the chemical reaction source supply system 100 also includes a second control valve 13a arranged on a reaction source supply pipeline connected to the reaction source container 11. The second control valve 13a includes, for example, a flow control valve, a pipeline control valve (pressure relief valve, a one-way valve, a stop valve), etc. Depending on the model and / or function of the second control valve 13a, the setting mode of the second control valve 13a can be flexibly selected. For example, the second control valve 13a can be set in the same way as the first control valve 13, that is, the bottom valve body of the second control valve 13a is located in the heating cabinet 12 and the upper actuator is located outside the heating cabinet 12. In this case, the first control valve 13 and the second control valve 13a can be centrally arranged, for example, uniformly arranged on the same valve plate. This unified setting method can shorten the length of the connecting pipeline, save space, and facilitate the unified heating of the lower part of all control valves.

[0040] In some other examples, the second control valve 13a may also be located entirely outside the heating cabinet 12. When the second control valve 13a is disposed outside the heating cabinet 12, the second control valve 13a may be a non-high temperature valve, but is not limited thereto. When the second control valve 13a is disposed outside the heating cabinet 12, the chemical reaction source supply system 100 may further be provided with a heating unit (not shown) for heating the second control valve 13a.

[0041] In some examples, a plurality of thermocouples (not shown) may be provided in the heating cabinet 12 to detect the temperature at various locations inside the heating cabinet 12, and then the heating effect may be optimized by adjusting the output power of the first heating unit 141 and / or the second heating unit 142 and other devices. In addition, before adjusting the power, software may be used to simulate the radiant heat field distribution of each heating device at a preset power, and the power of the heating device may be adaptively adjusted accordingly according to the simulation results of the heat field distribution, so as to achieve an ideal heating effect for the reaction source container in the heating cabinet.

[0042] The structure of the reaction source container 11 can be set as needed. For example, in one example, the reaction source container 11 is a tank body with a generally cylindrical structure, which can minimize the resistance of the reaction source molecules during movement and avoid accumulation on the inner surface of the tank body, especially at the corners of the tank body. The tank body of the reaction source container 11 and the cover body for sealing the tank body can be an integrally formed structure or a detachable connection. For example, when it is a detachable connection, the outer surface of the top of the tank body can be provided with an external thread, and the inner surface of the cover body is provided with a corresponding internal thread to thread the cover body to the top of the tank body. Of course, the technical solution of the present invention is not limited to this, and other alternative methods can be used to connect the cover body and the tank body. In addition, sealing components such as sealing rings can also be provided between the tank body and the cover body. The material of the tank body and the cover body is determined according to the material of the reaction source (the reaction source is usually a solid source), and it is necessary to ensure that it is a material that does not react with the reaction source steam or is corroded, and can withstand the evaporation temperature of the reaction source. The material of the cover body and the tank body can be the same or different, preferably the same, so that the reaction source container 11 has consistent thermal conductivity everywhere. For example, the tank body and the cover body can be made of metal materials such as stainless steel and titanium alloy, and the inner surface can be plated with an anti-corrosion coating. The use of metal material not only makes the reaction source container 11 have good mechanical strength, which is convenient for long-distance transportation, but also makes the reaction source container 11 have good thermal conductivity, so that the reaction source loaded in the container can be heated by a heating device arranged outside the container. The reaction source container 11 in a single heating cabinet 12 can be single or multiple. When it is multiple (for example, two or more), multiple reaction source containers 11 can be used to accommodate the same reaction source, or each is used to accommodate different reaction sources with the same evaporation temperature. When multiple reaction source containers 11 are used to accommodate the same reaction source, the gas outlets of multiple reaction source containers are preferably interconnected, so that the steam of different reaction source containers 11 is mixed and then transported to the reaction chamber, which helps to improve the deposition uniformity. The heating cabinet is arranged in the reaction source supply and distribution system of the present invention, which can not only protect the reaction source container 11, but also make the placement position of the chemical reaction source supply system 100 have more choices, without being limited to a constant temperature environment.

[0043] In order to reduce heat transfer with the surrounding environment and improve the thermal stability of the entire system, in one example, Figure 3 As shown, the chemical reaction source supply system 100 further includes a heat insulating layer 15, which is located outside the heating cabinet, close to the heating belt and away from the outer surface of the heating cabinet 12. The heat insulating layer 15 can be placed in contact with the second heating unit 142, or there can be a slight gap. The heat insulating layer 15 can be an organic and / or inorganic material, and preferably a heat insulating material in the form of soft felt or the like with a certain elasticity, so that the heat insulating layer 15 can not only play a heat insulating role, but also play a certain protective role for the heating cabinet 12, for example, it can reduce the damage to the heating cabinet 12 caused by external impact.

[0044] In one example, the chemical reaction source supply system 100 further includes a reflector 16 disposed on the inner surface of the heating cabinet 12. The reflector 16 can reflect the heat radiation inside the heating cabinet 12 back to the reaction source container 11 to further improve the heating effect. The reflector 16 is preferably made of a metal material such as a stainless steel plate with a mirror-polished surface, so that the reflector 16 has good impact resistance in addition to reflective performance. In addition, the reflector 16 can be grounded to eliminate environmental static electricity.

[0045] In a further example, the chemical reaction source supply system 100 may further be provided with a heat dissipation device 17 located outside the heating cabinet 12 for dissipating heat from the actuator and other components of the first control valve 13 located outside the heating cabinet 12. The heat dissipation device 17 includes but is not limited to a fan, such as a bladeless fan, located on one side of the first control valve 13. By cooling the first control valve 13 using the heat dissipation device 17, the working environment temperature of the first control valve 13 can be further reduced, for example, ensuring that it is reduced to within 120°C, which helps to extend the service life of the first control valve 13 and further reduce the cost of system use. The heat insulation layer 15 and the heat dissipation device 17 can be provided selectively or simultaneously.

[0046] In actual use, the reaction source can be placed inside the process equipment or separated by a certain distance. For example, the process equipment is usually arranged in a clean room, and for safety reasons, the reaction source container 11 can be centrally placed in the factory temperature control room. Therefore, it is very important to prevent the condensation of the raw material vapor formed by evaporation during the transportation process. Preferably, the reaction source is arranged inside the process equipment to shorten the length of the pipeline and reduce the risk of steam condensation. In one example, the heating device also includes a third heating unit 143 located on the outlet pipeline 113 connected to the outlet of the reaction source container 11 and / or a fourth heating unit 144 for heating the carrier gas pipeline 112 (please continue to refer to Figure 3 ). The structure of the third heating unit 143 and the fourth heating unit 144 is preferably the same as that of the second heating unit 142, for example, a flexible heating belt such as a silicone belt with a resistance wire inside, but is not limited to this. The carrier gas used can be, for example, an inert gas such as nitrogen, argon, etc., preferably nitrogen with relatively lower cost. By setting the third heating unit 143 and the fourth heating unit 144, the temperature of the carrier gas introduced into the reaction source container 11 is not lower than the temperature of the saturated vapor pressure of the solid source, and the raw material gas flow will not cool and settle during the transportation process. The third heating unit 143 and the fourth heating unit 144 can be connected to a temperature control device.

[0047] In one example, a plurality of temperature measuring devices may be provided in the heating cabinet 12, such as thermocouples, and a plurality of thermocouples are distributed at different positions of the heating cabinet 12 to measure the temperature of the corresponding area. During the initial installation, the radiant heat field distribution of each heating unit under the set power is simulated by software to adjust the output power of each heating unit. In actual work, the heating power of each heating unit is adjusted according to the detection result of the thermocouple to make the temperature in the heating cabinet 12 meet the requirements.

[0048] The internal structure of the reaction source container 11 can be set as needed. For example, if the reaction source material is a block or strip structure with a certain volume and shape suitable for fixation, the bottom of the reaction source container 11 can be a flat surface, and the reaction source material is spread flat inside the container. Under this structure, the carrier gas inlet can be set at a height slightly higher than the upper surface of the reaction source on the side wall of the reaction source container 11 to prevent the carrier gas from blowing directly toward the reaction source. However, in order to improve the evaporation efficiency, the reaction source material is usually in powder form. In order to prevent the carrier gas from taking the reaction source particles out of the container, in one example, the base of the reaction source container 11 is provided with at least one internal channel for accommodating a chemical reaction source, and the internal channel is, for example, a groove 111, and the carrier gas inlet of the reaction source container 11 is connected to the groove, for example, the inlet is located on the protrusion 116 between the grooves 111, so that the carrier gas outlet position is naturally higher than the upper surface of the reaction source material. The internal channel for accommodating the reaction source can be such as Figure 4 The spiral grooves shown in the figure are provided with a plurality of carrier gas inlets on the protrusions 116 between the grooves. Of course, in other examples, the grooves may also be distributed in concentric arcs, or in a serpentine shape, or in other shapes, and the grooves may be interconnected or disconnected, and the carrier gas inlet may also be arranged on the outside of the grooves (i.e., away from the center direction of the container), and there is no strict restriction on this. However, by using the grooves 111 distributed in a spiral shape or in a concentric annular shape, more grooves 111 can be arranged in a limited space to accommodate the reaction source materials, while improving the heating uniformity of the reaction source. When placing the reaction source, it is preferred to keep the reaction source in the same annular groove 111 to improve the heating uniformity.

[0049] In the case where the aforementioned heating units all use heating resistance wires, the heating wire 18 can be led out through the same outlet on the heating cabinet 12. Since the heating cabinet in the present invention does not need to work in a vacuum state, the outlet of the heating wire does not need to be sealed with vacuum flanges, sealing rings or other sealing members, which can reduce the installation and use costs of the system.

[0050] The chemical reaction source supply system of this embodiment is applicable to the supply of chemical reaction sources of various materials, including but not limited to hafnium sources, zirconium sources, etc. The heating temperature of each heating unit is determined according to the reaction source, which will not be elaborated in detail.

[0051] like Figure 5 As shown, the present invention also provides a semiconductor processing device, which can be used to form a desired film layer in the process of manufacturing a semiconductor device. The semiconductor processing device includes a process chamber 200 for semiconductor processing and a chemical reaction source supply system 100 as described in any of the above schemes. Therefore, the above introduction to the chemical reaction source supply system 100 can be quoted here in its entirety, and will not be repeated for the purpose of brevity.

[0052] The process chamber 200 can be, for example, a vapor deposition chamber, more specifically, an atomic layer deposition chamber, but is not limited thereto. Atomic layer deposition is a method of coating a substance layer by layer on a substrate surface in the form of a single atomic film, which has the advantage of high film quality, but its requirements for the reaction source are also very high, so it is very suitable for the chemical reaction source supply system 100 provided by the present invention. The process chamber 200 can be single or multiple. When the process chamber 200 is multiple, a transfer chamber and / or a preheating chamber (not shown) can also be provided on the device to form a cluster device (cluster). Each process chamber 200 includes a reaction chamber 21, and an air inlet and an air outlet are provided on the reaction chamber 21. The air inlet of the reaction chamber 21 is connected to the air outlet of the reaction source container 11 to transport the reaction source gas evaporated in the reaction source container 11 to the reaction chamber 21, and the air outlet of the process chamber is connected to the exhaust pipe. The other structures of the reaction chamber are not the focus of the present invention, and will not be further expanded.

[0053] Due to the use of the chemical reaction source supply system provided by the present invention, the space occupied by the semiconductor processing device provided by the present invention can be reduced, and the use and maintenance costs can be reduced.

[0054] In summary, the chemical reaction source supply system provided by the present invention places the interior of the heating cabinet in an atmospheric pressure environment, and through the clever arrangement of the heating and cooling devices, ensures that the reaction source container in the heating cabinet is at an ideal heating temperature, and the actuator on the upper part of the control valve is arranged outside the heating cabinet, so that the reaction source container can be uniformly heated without the use of sealing components such as vacuum pumps and flanges. The structure of the entire system is greatly simplified, the volume is greatly reduced, and the use and maintenance costs can be significantly reduced. The use of the semiconductor processing device provided by the present invention helps to reduce production costs. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has a high industrial utilization value.

[0055] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A chemical reaction source supply system, characterized in that: The chemical reaction source supply system comprises: a solid reaction source container, Heating cabinet, reaction source supply pipeline, first control valve, heating device and cooling device, wherein, The solid reaction source container is arranged in the heating cabinet for accommodating the chemical reaction source, and the interior of the heating cabinet is in an atmospheric pressure environment; The first control valve is disposed above the solid reaction source container and on a reaction source supply pipeline connected to the solid reaction source container, and is used to control the supply of the chemical reaction source in the solid reaction source container; The bottom valve body of the first control valve is arranged inside the heating cabinet, the working temperature of the bottom valve body is ≥200°C, the actuator of the first control valve is arranged outside the heating cabinet, the actuator is used to control the opening and closing of the bottom valve body, and the working temperature of the actuator is ≤120°C; The heating device comprises a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet, and is used to heat the solid reaction source container; the second heating unit is arranged outside the heating cabinet, and is used to heat the heating cabinet; The cooling device is arranged outside the heating cabinet, and the cooling device includes a cooling pipeline arranged in a groove on the outer surface of the heating cabinet or a semiconductor refrigeration sheet attached to the outer surface of the heating cabinet, and the cooling pipeline is used to be filled with a cooling medium; The solid reaction source container comprises a container base and a cover, the container base is provided with an internal channel for placing a chemical reaction source, the first control valve is arranged on the cover, and is connected to the interior of the solid reaction source container through the inlet and outlet channels of the cover; Wherein, the first control valve is an ALD valve; the chemical reaction source supply system also includes a thermal insulation layer, and the thermal insulation layer is arranged outside the heating cabinet.

2. The chemical reaction source supply system according to claim 1, characterized in that: The first heating unit includes heating plates respectively contacting the bottom and the top of the solid reaction source container, and the second heating unit includes a heating belt arranged outside the heating cabinet.

3. The chemical reaction source supply system according to claim 2, characterized in that: The heat insulating layer is close to the heating belt and away from the outer surface of the heating cabinet.

4. The chemical reaction source supply system according to claim 1, characterized in that: The chemical reaction source supply system also includes a reflection plate arranged on the inner surface of the heating cabinet.

5. The chemical reaction source supply system according to claim 1, characterized in that: The chemical reaction source supply system also includes a second control valve, which is arranged on a reaction source supply pipeline connected to the solid reaction source container. The second control valve adopts the same setting method as the first control valve, or the second control valve is placed outside the heating cabinet.

6. The chemical reaction source supply system according to claim 5, characterized in that: When the second control valve is disposed outside the heating cabinet, the second control valve includes a non-high-temperature valve, and the chemical reaction source supply system further includes a heating unit for heating the second control valve.

7. The chemical reaction source supply system according to claim 1, characterized in that: The chemical reaction source supply system also includes a heat dissipation device arranged outside the heating cabinet and used for dissipating heat from the actuator of the first control valve.

8. The chemical reaction source supply system according to claim 1, characterized in that: The solid-state reaction source container is provided with at least one internal channel for accommodating a chemical reaction source, and the carrier gas inlet of the solid-state reaction source container is connected to the internal channel.

9. The chemical reaction source supply system according to claim 1, characterized in that: The heating device further comprises a third heating unit and / or a fourth heating unit, wherein the third heating unit is located on a gas outlet pipeline connected to a gas outlet of the solid reaction source container, and the fourth heating unit is used for heating the carrier gas pipeline.

10. A semiconductor processing device, characterized in that: The device includes a process chamber for semiconductor processing and a chemical reaction source supply system as described in any one of claims 1 to 9, wherein the process chamber is provided with an air inlet and an air outlet, the air inlet of the process chamber is connected to the air outlet of the solid reaction source container, and the air outlet of the process chamber is connected to an exhaust pipeline.

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