Aluminum alloy mirror coating method and mirror aluminum alloy

Abstract

The application provides an aluminum alloy mirror surface coating method and a mirror surface aluminum alloy, and the aluminum alloy mirror surface coating method comprises the following steps: S1, providing a mirror surface aluminum alloy workpiece as a substrate; S2, performing physical etching on the surface of the substrate to form an etching layer; S3, introducing nitrogen and oxygen into the substrate under a vacuum environment, and using a silicon target and an aluminum target to deposit a bonding layer on the surface of the etching layer; S4, adjusting the flow rates of the nitrogen and the oxygen, and using the silicon target and the aluminum target to sequentially deposit a corrosion-resistant transition layer and a corrosion-resistant color layer on the surface of the bonding layer; and S5, adjusting the flow rates of the nitrogen and the oxygen, and using the silicon target to deposit a transparent protective layer on the surface of the corrosion-resistant color layer. According to the aluminum alloy mirror surface coating method, the PVD technology is used to realize breakthrough in the mirror surface aluminum alloy, the metallic luster is strong, and the coating effect of the mirror surface aluminum alloy is effectively ensured.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of surface treatment, and particularly relates to an aluminum alloy mirror surface coating method and a mirror surface aluminum alloy product. BACKGROUND

[0002] Physical vapor deposition (PVD) technology refers to a technology that under vacuum conditions, a material source (solid or liquid) surface is vaporized into gaseous atoms or molecules, or partially ionized into ions, and through a low-pressure gas (or plasma) process, a thin film with certain special functions is deposited on the surface of a substrate. Physical vapor deposition is one of the main surface treatment technologies.

[0003] PVD is mainly applied to the surface treatment of stainless steel materials. The surface treatment of aluminum alloy materials is mainly based on anode. The process technology of electroplating+PVD has certain application. The stainless steel substrate has high corrosion resistance and high hardness strength. The surface can be acid-activated. The arc target high current (70-120A) is used as a primer layer, the bonding force is high, and the influence on the mirror surface appearance is small.

[0004] However, for the substrate of aluminum alloy material, the hardness strength of the aluminum alloy material is low, and the acid corrosion resistance is low. The mirror surface cannot use the arc target high current (70-120A) as a primer layer. If the PVD technology is used for coating, the problems of low metal luster on the surface of the aluminum alloy and poor pitting of the mirror surface appearance will be caused. SUMMARY

[0005] An object of the present application is to provide an aluminum alloy mirror surface coating method, which can at least solve the problems of low metal luster on the surface of the aluminum alloy and poor pitting of the mirror surface appearance in the prior art.

[0006] Another object of the present application is to provide a mirror surface aluminum alloy.

[0007] According to the aluminum alloy mirror surface coating method of the first aspect of the present application, the following steps are included:

[0008] S1, providing a mirror surface aluminum alloy workpiece as a substrate;

[0009] S2, performing physical etching on the surface of the substrate to form an etching layer;

[0010] S3, introducing nitrogen and oxygen into the substrate under a vacuum environment, and using a silicon target and an aluminum target to deposit a bonding layer on the surface of the etching layer;

[0011] S4, adjusting the flow rates of nitrogen and oxygen, and using the silicon target and the aluminum target to sequentially deposit a corrosion-resistant transition layer and a corrosion-resistant color layer on the surface of the bonding layer;

[0012] S5, adjusting the flow of nitrogen and oxygen, using a silicon target to deposit a transparent protective layer on the surface of the corrosion-resistant color layer.

[0013] Optionally, step S2 comprises:

[0014] S21, placing the substrate in a vacuum environment;

[0015] S22, under the conditions of a first voltage and a first current, introducing an ion source into the vacuum environment to bombard the surface of the substrate and form the etching layer.

[0016] Optionally, the first voltage is 800V-1200V, the first current is 0.3A-0.5A, and the duty cycle of the vacuum environment in step S2 is 20%-40%.

[0017] Optionally, the ion source is Ar, the introduction speed of the ion source is 40L / min-100L / min, and the introduction time is 1500S-2000S.

[0018] Optionally, step S3 comprises:

[0019] S31, introducing a protective gas and nitrogen and oxygen into the vacuum environment, and bombarding a silicon target under the conditions of a second voltage and a second current;

[0020] S32, bombarding an aluminum target under the conditions of a third voltage and a third current;

[0021] S33, using a direct current superimposed pulse bias power supply to deposit the bonding layer on the surface of the etching layer under the condition of a fourth voltage.

[0022] Optionally, the protective gas is argon, the introduction speed of the protective gas is 200L / min-250L / min, the second voltage is 500V-700V, the second current is 10A-15A, the third voltage is 500V-600V, the third current is 8A-12A, the fourth voltage is gradually reduced in the range of 150V-100V, the duty cycle of the vacuum environment in step S3 is gradually reduced in the range of 70%-50%, the coating time of step S3 is 1000S-1200S, and the thickness of the bonding layer is 0.1μm-0.2μm.

[0023] Optionally, in step S3, the content of Si element accounts for 50%-60% of the total weight of the introduced raw materials, the content of Al element accounts for 15%-20% of the total weight of the introduced raw materials, and the total content of nitrogen element and oxygen element accounts for 10%-20% of the total weight of the introduced raw materials.

[0024] Optionally, step S4 comprises:

[0025] S41, introducing a protective gas into the vacuum environment, and introducing nitrogen and oxygen, and bombarding a silicon target under a fifth voltage and a fifth current condition;

[0026] S42, bombarding an aluminum target under a sixth voltage and a sixth current condition;

[0027] S43, using a direct current superimposed pulse bias power supply to deposit the corrosion-resistant transition layer on the surface of the bonding layer under a seventh voltage condition;

[0028] S44, bombarding a silicon target under an eighth voltage and an eighth current condition;

[0029] S45, bombarding an aluminum target under a ninth voltage and a ninth current condition;

[0030] S46, using a direct current superimposed pulse bias power supply to deposit the corrosion-resistant color layer on the surface of the corrosion-resistant transition layer under a tenth voltage condition.

[0031] Optionally, in steps S41 to S43, the total plating time is 3000S-3600S, the thickness of the corrosion-resistant transition layer is 1.2μm-1.5μm, the content of Si element accounts for 40%-50% of the total weight of the introduced raw materials, the content of Al element accounts for 5%-10% of the total weight of the introduced raw materials, and the total content of nitrogen element and oxygen element accounts for 40%-50% of the total weight of the introduced raw materials.

[0032] The total plating time of steps S44 to S46 is 1200S-1800S, the thickness of the corrosion-resistant color layer is 0.3μm-0.5μm, the content of Si element accounts for 50%-60% of the total weight of the introduced raw materials, the content of Al element accounts for less than 5% of the total weight of the introduced raw materials, and the total content of nitrogen element and oxygen element accounts for 30%-40% of the total weight of the introduced raw materials.

[0033] Optionally, step S5 comprises:

[0034] S51, introducing a protective gas into the vacuum environment, and introducing nitrogen and oxygen, and bombarding a silicon target under an eleventh voltage and an eleventh current condition;

[0035] S52, using a direct current superimposed pulse bias power supply to deposit the transparent protective layer on the surface of the corrosion-resistant color layer under a twelfth voltage condition.

[0036] According to the mirror surface aluminum alloy of the second aspect of the embodiment of the present application, the mirror surface aluminum alloy comprises:

[0037] a substrate, the substrate being a mirror surface aluminum alloy workpiece, and the surface of the substrate being provided with an etching layer;

[0038] a bonding layer, the bonding layer being deposited on the etching layer;

[0039] a corrosion-resistant transition layer and a corrosion-resistant color layer, which are sequentially deposited on the etching layer;

[0040] a transparent protective layer, which is deposited on the surface of the corrosion-resistant color layer.

[0041] The aluminum alloy mirror surface coating method according to the embodiment of the present application solves the problems of low surface metal luster and low brightness after anodic oxidation of the aluminum alloy, and also solves the technical problems of poor bonding force of electroplating + PVD, low yield of mirror surface appearance, and poor environmental test reliability. The method realizes a breakthrough in mirror surface aluminum alloy by using PVD technology, so that the color of the aluminum alloy mirror surface after coating can be stably made to be 80 > L > 85, -0.5 > a > 0, -1 > b > 0, and the metal luster is strong; and the color can also be made to be any optional color system in 55 > L > 80, -0 > a > 1, and 0 > b > 2, effectively ensuring the coating effect of the mirror surface aluminum alloy.

[0042] Other features of the present application, and their advantages, will become apparent from the following detailed description of illustrative embodiments thereof, when considered in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0043] The above and / or additional aspects and advantages of the present application will become apparent and be readily understood from the following description, taken in conjunction with the accompanying drawings, in which:

[0044] Figure 1 is a flowchart of the aluminum alloy mirror surface coating method according to the embodiment of the present application;

[0045] Figure 2 is a structural schematic diagram of a mirror surface aluminum alloy product according to the embodiment of the present application.

[0046] REFERENCE NUMERALS

[0047] Base body 10; etching layer 20; deposition bonding layer 30; corrosion-resistant transition layer 40; corrosion-resistant color layer 50; transparent protective layer 60. DETAILED DESCRIPTION

[0048] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangement of components and steps, numerical expressions, and numerical values set forth in these embodiments are illustrative only and do not limit the scope of the present application unless otherwise specifically stated.

[0049] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way limiting to the scope of the application or its applications or uses.

[0050] Techniques, methods, and apparatus known to those of ordinary skill in the relevant art(s) can not be discussed in detail herein. However, where appropriate, the techniques, methods, and apparatus should be considered as being part of the description of the application.

[0051] In all of the examples shown and discussed herein, any specific values should be interpreted as merely exemplary and not as a limitation. Thus, other examples of the exemplary embodiments can have different values.

[0052] It should be noted that like reference numerals and letters refer to like items throughout the several views, and as such, no further discussions on the same shall be undertaken in the subsequent views.

[0053] The aluminum alloy mirror surface coating method according to the embodiments of the present application is described in detail as follows.

[0054] The aluminum alloy mirror surface coating method according to the embodiments of the present application comprises the following steps:

[0055] S1, providing a mirror surface aluminum alloy workpiece as a substrate 10;

[0056] S2, performing physical etching on the surface of the substrate to form an etching layer 20;

[0057] S3, introducing nitrogen and oxygen into the substrate under vacuum environment, and using a silicon target and an aluminum target to deposit a bonding layer 30 on the surface of the etching layer 20;

[0058] S4, adjusting the flow rates of nitrogen and oxygen, and using the silicon target and the aluminum target to sequentially deposit a corrosion-resistant transition layer 40 and a corrosion-resistant color layer 50 on the surface of the bonding layer 30;

[0059] S5, adjusting the flow rates of nitrogen and oxygen, and using the silicon target to deposit a transparent protective layer 60 on the surface of the corrosion-resistant color layer 50.

[0060] In other words, as shown in Figure 1 and Figure 2 shown, Figure 1 shows the preparation process of the aluminum alloy mirror surface coating method according to the embodiments of the present application, Figure 2 shows a structural schematic diagram of an aluminum alloy mirror surface product prepared by the aluminum alloy mirror surface coating method according to the embodiments of the present application, wherein step S1 provides a mirror surface aluminum alloy workpiece as a substrate 10. The mirror surface aluminum alloy workpiece can be a part of the surface constituting an aluminum alloy mirror surface, or the entire outer surface constituting an aluminum alloy mirror surface, as long as at least a part of the exposed part is formed into an aluminum alloy mirror surface, and the part with the aluminum alloy mirror surface can be used as the substrate 10. After providing the substrate 10, the surface of the substrate 10 can be treated, which can be understood as treating the surface of the mirror surface aluminum alloy.

[0061] The specific steps of processing the base body 10 can be understood as follows: Figure 1 The specific steps of processing the base body 10 can be understood as follows: Figure 2 That is, the specific steps of processing the base body 10 can be understood as follows: forming the etching layer 20, the deposition bonding layer 30, the corrosion-resistant transition layer 40, the corrosion-resistant color layer 50 and the transparent protective layer 60 on the surface of the base body 10 in sequence, forming the etching layer 20 on the surface of the base body 10 so that the surface of the base body 10 has dense nanoscale holes, and then plating the deposition bonding layer 30 and other structures on the surface of the base body 10, which can effectively solve the problems of low film bonding force of the mirror aluminum alloy, many pitting on the appearance of the mirror after plating, poor environmental test reliability and the like, and improve the metal luster of the mirror aluminum alloy after surface treatment, and ensure the stability of the color.

[0062] Therefore, the aluminum alloy mirror plating method according to the embodiment of the present application solves the problems of low metal luster and low brightness of the aluminum alloy after anodic oxidation, and also solves the technical problems of poor bonding force of the aluminum alloy electroplating+PVD, low yield of the mirror appearance, and poor environmental test reliability. The method realizes the breakthrough of the mirror aluminum alloy by using the PVD technology, so that the color of the aluminum alloy mirror after plating can be stably achieved as 80>L>85, -0.5>a>0, -1>b>0, the metal luster is strong, and the plating effect of the mirror aluminum alloy is effectively ensured.

[0063] The steps of the aluminum alloy mirror plating method according to the embodiment of the present application will be described in detail below.

[0064] According to an embodiment of the present application, the step S2 comprises:

[0065] S21, placing the base body in a vacuum environment;

[0066] S22, under the conditions of a first voltage and a first current, introducing an ion source into the vacuum environment to bombard the surface of the base body, so as to form the etching layer.

[0067] Optionally, the first voltage is 800V-1200V, the first current is 0.3A-0.5A, and the duty cycle of the vacuum environment in the step S2 is 20%-40%.

[0068] Further, the ion source is Ar, the introduction speed of the ion source is 40L / min-100L / min, and the introduction time is 1500S-2000S.

[0069] That is, the method of plating the etching layer 20 on the mirror aluminum alloy can be as follows:

[0070] The two reverse variable direct current power sources are used to carry out double ion source etching, high voltage is 600-1800V, low current is 0.3-0.5A, duty cycle control is 20-40%, and 40-100L / Min Ar is simultaneously introduced to carry out surface treatment on the substrate, time is 1500-2000S, and the etching layer 20 with dense nanoscale holes is formed on the surface of the substrate 10.

[0071] Therefore, the aluminum alloy mirror surface coating method according to the embodiment of the application adopts the Ar high-voltage low-current etching process, and solves the problems of low film layer adhesion of the mirror surface aluminum alloy and the pimple defect of the mirror surface appearance.

[0072] In some specific embodiments of the application, step S3 comprises:

[0073] S31, protective gas, nitrogen and oxygen are introduced into the vacuum environment, and the silicon target is bombarded under the condition of the second voltage and the second current;

[0074] S32, the aluminum target is bombarded under the condition of the third voltage and the third current;

[0075] S33, a direct current superimposed pulse bias power supply is used to deposit the bonding layer on the surface of the etching layer under the condition of the fourth voltage.

[0076] Optionally, the protective gas is argon, the introduction speed of the protective gas is 200L / min-250L / min, the second voltage is 500V-700V, the second current is 10A-15A, the third voltage is 500V-600V, the third current is 8A-12A, the fourth voltage is gradiently reduced in the range of 150V-100V, the duty cycle of the vacuum environment in step S3 is gradiently reduced in the range of 70%-50%, the coating time of step S3 is 1000S-1200S, and the thickness of the bonding layer is 0.1μm-0.2μm.

[0077] Further, in step S3, the content of the Si element accounts for 50%-60% of the total weight of the introduced raw materials, the content of the Al element accounts for 15%-20% of the total weight of the introduced raw materials, and the total content of the nitrogen element and the oxygen element accounts for 10%-20% of the total weight of the introduced raw materials.

[0078] In other words, the method for forming the bonding layer 30 on the etching layer 20 can adopt the following steps:

[0079] In a vacuum environment, 200-250L / Min argon is introduced, a medium frequency power source 10-15A, voltage 500-700V is used to bombard the silicon target, a direct current power source 8-12A, 500-600V is used to bombard the aluminum target material, a direct current superimposed pulse bias power source is used for the cathode, the voltage is controlled to be 150-100V gradient reduction, the duty cycle is 70-50% gradient reduction, the total film coating time is controlled to be 1000-1200S, the film thickness is controlled to be 0.1-0.2um, the Si content is controlled to be 50-60%, the aluminum content is controlled to be 15-20%, and the nitrogen and oxygen content is controlled to be 10-20%.

[0080] According to some embodiments of the present application, step S4 comprises:

[0081] S41, protective gas, nitrogen and oxygen are introduced into the vacuum environment, and a silicon target is bombarded under a fifth voltage and a fifth current condition;

[0082] S42, an aluminum target is bombarded under a sixth voltage and a sixth current condition;

[0083] S43, a direct current superimposed pulse bias power source is used to deposit the corrosion-resistant transition layer 40 on the surface of the bonding layer 30 under a seventh voltage condition;

[0084] S44, a silicon target is bombarded under an eighth voltage and an eighth current condition;

[0085] S45, an aluminum target is bombarded under a ninth voltage and a ninth current condition;

[0086] S46, a direct current superimposed pulse bias power source is used to deposit the corrosion-resistant color layer 50 on the surface of the corrosion-resistant transition layer 40 under a tenth voltage condition.

[0087] Specifically, in steps S41 to S43, the total film coating time is 3000S-3600S, the thickness of the corrosion-resistant transition layer is 1.2um-1.5um, the content of Si element accounts for 40%-50% of the total weight of the introduced raw materials, the content of Al element accounts for 5%-10% of the total weight of the introduced raw materials, and the total content of nitrogen element and oxygen element accounts for 40%-50% of the total weight of the introduced raw materials.

[0088] The total film coating time of steps S44 to S46 is 1200S-1800S, the thickness of the corrosion-resistant color layer is 0.3um-0.5um, the content of Si element accounts for 50%-60% of the total weight of the introduced raw materials, the content of Al element accounts for less than 5% of the total weight of the introduced raw materials, and the total content of nitrogen element and oxygen element accounts for 30%-40% of the total weight of the introduced raw materials.

[0089] In other words, the step of forming the corrosion-resistant transition layer 40 on the bonding layer 30 can comprise:

[0090] In a vacuum environment, 200-250L / Min argon is introduced, a medium frequency power source 10-15A, voltage 500-700V is used to bombard the silicon target, a direct current power source 6-8A, 400-500V is used to bombard the aluminum target material, a direct current superimposed pulse bias power source is used for the cathode, the voltage is controlled between 100-80V, the duty cycle is between 50-40%, the total film coating time is controlled between 3000-3600S, the film thickness is controlled between 1.2-1.5um, the Si content is controlled between 40-50%, the aluminum content is controlled between 5-10%, and the nitrogen and oxygen content is controlled between 40-50%.

[0091] The step of forming the corrosion-resistant color layer 50 on the corrosion-resistant transition layer 40 can include:

[0092] In a vacuum environment, 200-250L / Min argon is introduced, a medium frequency power source 10-15A, voltage 500-700V is used to bombard the silicon target, a direct current power source 4-6A, 300-400V is used to bombard the aluminum target material, a direct current superimposed pulse bias power source is used for the cathode, the voltage is controlled between 100-80V, the duty cycle is between 50-40%, the total film coating time is controlled between 1200-1800S, the film thickness is controlled between 0.3-0.5um, the Si content is controlled between 50-60%, the aluminum content is controlled within 5%, and the nitrogen and oxygen content is controlled between 30-40%.

[0093] The application adopts a corrosion-resistant film layer of SiOxNy, solves the problem of poor environmental test reliability, and passes reliability tests such as salt spray 48H, acidic / alkaline sweat 48H, and various cosmetics.

[0094] According to some embodiments of the application, step S5 includes:

[0095] S51, introduce a protective gas into the vacuum environment, and introduce nitrogen and oxygen, and bombard the silicon target under the eleventh voltage and the eleventh current condition;

[0096] S52, using a direct current superimposed pulse bias power source, depositing the transparent protective layer 60 on the surface of the corrosion-resistant color layer 50 under the twelfth voltage condition.

[0097] Specifically, the step of depositing the transparent protective layer 60 on the corrosion-resistant color layer 50 can include:

[0098] In a vacuum environment, 200-250L / Min argon is introduced, a medium frequency power source 10-15A, voltage 500-700V is used to bombard the silicon target, the cathode uses a direct current superimposed pulse bias power source, the voltage is controlled between 100-120V, the duty cycle is between 50-60%, the total plating time is controlled between 600-900S, the film thickness is controlled between 0.1-0.2um, the Si content is controlled between 70-80%, and the nitrogen and oxygen content is controlled between 20-30%.

[0099] Therefore, the etching layer 20, the bonding layer 30, the corrosion-resistant transition layer 40, the corrosion-resistant color layer 50 and the transparent protective layer 60 can be plated on the surface of the aluminum alloy mirror substrate 10 in sequence, which effectively solves the technical difficulties of low anodic oxidation metal luster of the aluminum alloy mirror product, low appearance yield of traditional process electroplating+PVD, poor film layer bonding force and poor environmental test reliability, reduces the process procedure and reduces the manufacturing cost.

[0100] The mirror aluminum alloy product structure according to the embodiment of the present application is shown in Figure 2 The specific structure of the mirror aluminum alloy product has been described in detail in the above embodiment, and thus is not repeated. Since the aluminum alloy mirror plating method according to the above embodiment of the present application has the above technical effects, the mirror aluminum alloy prepared by using the preparation method also has corresponding technical effects, i.e., strong film layer bonding force and high environmental test reliability.

[0101] The aluminum alloy mirror plating method of the present application will be specifically described below in combination with specific examples and comparative examples.

[0102] Example 1

[0103] The mirror aluminum alloy workpiece is placed in a plating chamber, two ion sources are turned on, the voltage is set to 800V, the low current is 0.5A, the duty cycle is controlled to 40%, 100L / Min Ar is introduced, and the time is 2000S to bombard the substrate surface to form an etching layer.

[0104] 250L / Min argon, appropriate amount of nitrogen and oxygen are introduced, a medium frequency power source 10A, voltage 500V is used to bombard the silicon target, a direct current power source 8A, 500V is used to bombard the aluminum target material, a cathode uses a direct current superimposed pulse bias power source, the voltage is controlled to 150V, the duty cycle is 50%, the plating time is 1200S, and a bonding layer is formed.

[0105] 250L / Min argon, appropriate amount of nitrogen and oxygen are introduced, a medium frequency power source 10A, voltage 500V is used to bombard the silicon target, a direct current power source 6A, 400V is used to bombard the aluminum target material, a cathode uses a direct current superimposed pulse bias power source, the voltage is controlled to 100V, the duty cycle is 40%, the total plating time is controlled to 3600S, and a corrosion-resistant transition layer is formed.

[0106] Put 250L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 10A, voltage 500V bombard silicon target, direct current power supply 4A, 300V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 100 between, duty cycle 40% between, total film time control in 1800S between, forming corrosion resistance color layer.

[0107] Put 250L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 10A, voltage 500V bombard silicon target, cathode using direct current superimposed pulse bias power supply, voltage control in 100V between, duty cycle 50% between, total film time control in 900S between, forming transparent protective layer.

[0108] Example 2

[0109] Put mirror surface aluminum alloy workpiece in the film chamber, open 2 ion source, set voltage 950V, low current 0.45A, duty cycle control in 30%, and put in 80L / Min Ar, time for 1800S, bombardment of substrate surface forming etching layer.

[0110] Put 250L / Min argon, appropriate amount of nitrogen and oxygen, open intermediate frequency power supply 12A, voltage 580V bombard silicon target, direct current power supply 9.5A, 550V bombard aluminum target material, at the same time to workpiece using direct current superimposed pulse bias power supply, voltage control in 140V, duty cycle 65%, film time 1150S, forming binding layer.

[0111] Put 240L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 12A, voltage 580V bombard silicon target, direct current power supply 6.5A, 430V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 95V between, duty cycle 43% between, total film time control in 3400S between, forming corrosion resistance transition layer.

[0112] Put 240L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 12A, voltage 580V bombard silicon target, direct current power supply 4.5A, 330V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 95V between, duty cycle 43% between, total film time control in 1600S between, forming corrosion resistance color layer.

[0113] Put 240L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 12A, voltage 580V bombard silicon target, cathode using direct current superimposed pulse bias power supply, voltage control in 105V between, duty cycle 55% between, total film time control in 800S between, forming transparent protective layer.

[0114] Example 3

[0115] The mirror surface aluminum alloy workpiece is placed in a coating chamber, two ion sources are opened, the voltage is set to 1050V, the low current is 0.35A, the duty cycle is controlled to be 25%, 60L / Min Ar is introduced, the time is 1650S, the substrate surface is bombarded to form an etching layer.

[0116] 250L / Min argon, appropriate amount of nitrogen and oxygen are introduced, the intermediate frequency power supply is opened at 14A and the voltage is 650V to bombard the silicon target, the direct current power supply is 10.5A and 580V to bombard the aluminum target material, at the same time, the direct current superimposed pulse bias power supply is used for the workpiece, the voltage is controlled to be 120V, the duty cycle is 65%, the coating time is 1050S, and a binding layer is formed.

[0117] 220L / Min argon, appropriate amount of nitrogen and oxygen are introduced, the intermediate frequency power supply is used at 14A and the voltage is 650V to bombard the silicon target, the direct current power supply is 7.5A and 470V to bombard the aluminum target material, the cathode uses the direct current superimposed pulse bias power supply, the voltage is controlled to be between 90V, the duty cycle is between 46%, and the total coating time is controlled to be between 3200S, and a corrosion-resistant transition layer is formed.

[0118] 220L / Min argon, appropriate amount of nitrogen and oxygen are introduced, the intermediate frequency power supply is used at 14A and the voltage is 650V to bombard the silicon target, the direct current power supply is 5A and 380V to bombard the aluminum target material, the cathode uses the direct current superimposed pulse bias power supply, the voltage is controlled to be between 90V, the duty cycle is between 46%, and the total coating time is controlled to be between 1400S, and a corrosion-resistant color layer is formed.

[0119] 220L / Min argon, appropriate amount of nitrogen and oxygen are introduced, the intermediate frequency power supply is used at 13.5A and the voltage is 630V to bombard the silicon target, the cathode uses the direct current superimposed pulse bias power supply, the voltage is controlled to be between 115V, the duty cycle is between 58%, and the total coating time is controlled to be between 700S, and a transparent protective layer is formed.

[0120] Example 4

[0121] The mirror surface aluminum alloy workpiece is placed in a coating chamber, two ion sources are opened, the voltage is set to 1050V, the low current is 0.35A, the duty cycle is controlled to be 25%, 60L / Min Ar is introduced, the time is 1650S, the substrate surface is bombarded to form an etching layer.

[0122] 250L / Min argon, appropriate amount of nitrogen and oxygen are introduced, the intermediate frequency power supply is opened at 14A and the voltage is 650V to bombard the silicon target, the direct current power supply is 10.5A and 580V to bombard the aluminum target material, at the same time, the direct current superimposed pulse bias power supply is used for the workpiece, the voltage is controlled to be 120V, the duty cycle is 65%, the coating time is 1050S, and a binding layer is formed.

[0123] Put 200L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 15A, voltage 700V bombard silicon target, direct current power supply 8A, 500V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 80V between, duty cycle 50% between, total film time control in 3000S between, forming corrosion resistance transition layer.

[0124] Put 200L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 15A, voltage 700V bombard silicon target, direct current power supply 6A, 400V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 80V between, duty cycle 50% between, total film time control in 1200S between, forming corrosion resistance color layer.

[0125] Put 200L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 15A, voltage 700V bombard silicon target, cathode using direct current superimposed pulse bias power supply, voltage control in 120V between, duty cycle 60% between, total film time control in 600S between, forming transparent protective layer.

[0126] Comparative example 1

[0127] The aluminum alloy electroplated parts or aluminum alloy parts are placed in the plating chamber, two ion sources are started, the voltage is set to 600V, the low current is 0.6A, the duty cycle is controlled to 50%, and 120L / Min Ar is introduced for 1300S to bombard the surface of the substrate to form an etching layer.

[0128] Put 260L / Min argon, appropriate amount of nitrogen and oxygen, start the intermediate frequency power supply 16A, voltage 750V bombard silicon target, direct current power supply 13A, 650V bombard aluminum target material, at the same time, the workpiece is subjected to direct current superimposed pulse bias power supply, voltage control in 160V, duty cycle 75%, film time 900S, forming binding layer.

[0129] Put 260L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 16A, voltage 750V bombard silicon target, direct current power supply 9A, 550V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 110V between, duty cycle 55% between, total film time control in 2600S between, forming corrosion resistance transition layer.

[0130] Put 260L / Min argon, appropriate amount of nitrogen and oxygen, using the intermediate frequency power supply 16A, voltage 750V bombard silicon target, direct current power supply 7A, 500V bombard aluminum target material, cathode using direct current superimposed pulse bias power supply, voltage control in 110V between, duty cycle 55% between, total film time control in 1100S between, forming corrosion resistance color layer.

[0131] The silicon target is bombarded by using a medium frequency power source 16A and argon gas, appropriate nitrogen gas and oxygen gas, a voltage of 750V, a cathode using a direct current superimposed pulse bias power source, a voltage controlled between 130V, a duty cycle between 65%, and a total film coating time controlled between 950S to form a transparent protective layer.

[0132] Through the test results of the above examples and comparative examples, 10PCS of the same batch are detected for reliability test, and 100PCS of the same batch are detected for appearance, and the detection results are shown in Table 1. As shown in Table 1, the product prepared by using the aluminum alloy mirror surface coating method of the embodiment of the present application has more excellent salt spray resistance and sweat resistance, stronger bonding force, and obviously improved pitting yield.

[0133] Table 1 Performance detection results

[0134]

[0135]

[0136] Although some specific embodiments of the present application have been described in detail by examples, those skilled in the art should understand that the above examples are only for illustration, but not for limiting the scope of the present application. Those skilled in the art should understand that the above examples can be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A method for mirror-finish coating of aluminum alloy, characterized in that, Includes the following steps: S1. Provide mirror-finished aluminum alloy workpieces as the base material; S2. Physical etching is performed on the surface of the substrate to form an etched layer; S3. Nitrogen and oxygen are introduced into the substrate under vacuum. A silicon target and an aluminum target are used to deposit a bonding layer on the surface of the etched layer. The thickness of the bonding layer is 0.1μm-0.2μm. S4. Adjust the flow rates of nitrogen and oxygen, and using silicon and aluminum targets, sequentially deposit a corrosion-resistant transition layer and a corrosion-resistant color layer on the surface of the bonding layer. The thickness of the corrosion-resistant transition layer is 1.2μm-1.5μm, and the thickness of the corrosion-resistant color layer is 0.3μm-0.5μm. S5. Adjust the flow rates of nitrogen and oxygen, and using a silicon target, deposit a transparent protective layer on the surface of the corrosion-resistant color layer, the thickness of which is 0.1μm-0.2μm; In step S3, the content of Si element accounts for 50%-60% of the total weight of the raw material, the content of Al element accounts for 15%-20% of the total weight of the raw material, and the total content of nitrogen and oxygen elements accounts for 10%-20% of the total weight of the raw material. In step S4, which involves generating a corrosion-resistant transition layer, the content of Si element accounts for 40%-50% of the total weight of the raw materials fed in, the content of Al element accounts for 5%-10% of the total weight of the raw materials fed in, and the total content of nitrogen and oxygen elements accounts for 40%-50% of the total weight of the raw materials fed in. In step S4, which generates the corrosion-resistant color layer, the content of Si element accounts for 50%-60% of the total weight of the raw materials fed in, the content of Al element accounts for less than 5% of the total weight of the raw materials fed in, and the total content of nitrogen and oxygen elements accounts for 30%-40% of the total weight of the raw materials fed in. In step S5, the Si content accounts for 70-80% of the total weight of the raw materials, and the nitrogen and oxygen content accounts for 20-30% of the total weight of the raw materials.

2. The method according to claim 1, characterized in that, Step S2 includes: S21. Place the substrate in a vacuum environment; S22. Under the conditions of the first voltage and the first current, an ion source is introduced into the vacuum environment to bombard the surface of the substrate, thereby forming the etched layer.

3. The method according to claim 2, characterized in that, The first voltage is 800V-1200V, the first current is 0.3A-0.5A, and the duty cycle of the vacuum environment in step S2 is 20%-40%.

4. The method according to claim 2, characterized in that, The ion source is Ar, the ion source injection rate is 40L / min-100L / min, and the injection time is 1500s-2000s.

5. The method according to claim 1, characterized in that, Step S3 includes: S31. A protective gas is introduced into the vacuum environment, and nitrogen and oxygen are introduced to bombard the silicon target under the second voltage and the second current conditions. S32. Bombard the aluminum target under the third voltage and third current conditions; S33. Using a DC superimposed pulse bias power supply, under the fourth voltage condition, the bonding layer is deposited on the surface of the etched layer.

6. The method according to claim 5, characterized in that, The protective gas is argon, the gas flow rate is 200L / min-250L / min, the second voltage is 500V-700V, the second current is 10A-15A, the third voltage is 500V-600V, the third current is 8A-12A, the fourth voltage is a gradient decrease within the range of 150V-100V, the duty cycle of the vacuum environment in step S3 is a gradient decrease within the range of 70%-50%, and the coating time in step S3 is 1000s-1200s.

7. The method according to claim 1, characterized in that, Step S4 includes: S41. A protective gas is introduced into the vacuum environment, and nitrogen and oxygen are introduced to bombard the silicon target under the conditions of the fifth voltage and the fifth current. S42. Bombard the aluminum target under the sixth voltage and sixth current conditions; S43. Using a DC superimposed pulse bias power supply, under the seventh voltage condition, deposit the corrosion-resistant transition layer on the surface of the bonding layer; S44. Bombard the silicon target under the eighth voltage and eighth current conditions; S45. Bombard the aluminum target under the ninth voltage and ninth current conditions; S46. Using a DC superimposed pulse bias power supply, under the tenth voltage condition, deposit the corrosion-resistant color layer on the surface of the corrosion-resistant transition layer.

8. The method according to claim 7, characterized in that, In steps S41 to S43, the total coating time is 3000s-3600s; The total coating time for steps S44 to S46 is 1200s-1800s.

9. The method according to claim 1, characterized in that, Step S5 includes: S51. A protective gas is introduced into the vacuum environment, and nitrogen and oxygen are introduced to bombard the silicon target under the eleventh voltage and eleventh current conditions. S52. Using a DC superimposed pulse bias power supply, under the twelfth voltage condition, deposit the transparent protective layer on the surface of the corrosion-resistant color layer.

10. A mirror-finish aluminum alloy, characterized in that, The aluminum alloy mirror coating is prepared according to any one of claims 1-9, comprising: The substrate is a mirror-finished aluminum alloy workpiece, and the surface of the substrate is provided with an etched layer; A bonding layer is deposited on the etched layer; A corrosion-resistant transition layer and a corrosion-resistant color layer are sequentially deposited on the etched layer; A transparent protective layer is deposited on the surface of the corrosion-resistant color layer.

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