Current sensing device

Abstract

The present application provides a current sensing device comprising: a magnetic sensor chip, a support pin for supporting the magnetic sensor chip, and a package for encapsulating the magnetic sensor chip and the support pin. The magnetic sensor chip is used to detect current flowing through a conductor. The magnetic sensor chip includes a magnetic sensor module, which comprises a first portion and a second portion that are separated but electrically connected. The first and second portions are arranged perpendicular to the direction of current flow in the conductor and are located on opposite sides of the conductor along the direction of current flow. The current sensing device described in the present application requires only a single magnetic sensor to selectively output the magnetic field generated by the current to be measured, thereby achieving immunity to interference from ambient magnetic fields.

Description

Technical Field

[0001] This application relates to the field of circuit technology, and in particular to a current sensing device. Background Technology

[0002] Current measurement plays a crucial role in many applications, such as motor servo control, circuit protection, power control, and temperature regulation. Traditional contact-type current measurement involves connecting a resistor in series with the current-carrying conductor, configuring a sampling circuit across the resistor to obtain the voltage across the resistor, calculating the current value, and finally outputting it through an isolation chip. This method offers advantages such as fast response and high accuracy, but its disadvantages include a complex overall device architecture (low-temperature drift resistor, sampling chip, and isolation chip), leading to higher costs. However, in high-power circuit systems, such as motor or load control, inverter circuits, power factor correction, and power monitoring systems, where currents ranging from a few amperes to hundreds or even thousands of amperes need to be monitored, the traditional series resistor monitoring method results in significant energy loss, an unavoidable drawback.

[0003] Non-contact current measurement is achieved through a magnetic field. A portion of the current in the current-carrying conductor is led to the vicinity of the magnetic sensor through parallel connection. The current value in the conductor is obtained by measuring the magnetic field generated by this current. Since the chip that generates the current and the chip that generates the signal is electrically insulated, the signal output terminal of this method does not require an isolation chip; moreover, this magnetic field detection method is not sensitive to the temperature effect of the resistance of the conductor used in parallel connection, and no special conductor material is required. Therefore, the overall device architecture is simple and cost-competitive.

[0004] However, the magnetic field of the operating environment of the magnetic sensor can affect the sensing results. Existing solutions generally use two independent magnetic sensors, sampling the output signals separately and then subtracting the two signals to eliminate the signal generated by the uniform magnetic field in the environment. This approach inevitably requires two independent sampling processes. If the signal processing circuit has only one set of amplification and sampling circuits, the two magnetic sensors need to be sampled alternately at different time points, requiring two samplings to complete one measurement. This working method will limit the response speed of the current measurement device and cannot meet the application requirements of high-speed measurement. If the signal processing circuit has two sets of independent amplification and sampling circuits, although the output signals of the two magnetic sensors can be acquired simultaneously, the overall power consumption of the device will be larger, the circuit structure will be more complex, and the mismatch between the two sets of amplification and sampling circuits is also a problem that must be addressed. Summary of the Invention

[0005] Based on the aforementioned deficiencies in the background technology, the purpose of this application is to provide a current sensing device that uses a single magnetic sensor, whose output signal has already removed the influence of the ambient magnetic field, has a simple structure, is easy to use, and reduces costs.

[0006] To achieve the above objectives, this application provides a current sensing device, comprising: a magnetic sensor chip, support pins for carrying the magnetic sensor chip, and a package for encapsulating the magnetic sensor chip and the support pins. The magnetic sensor chip is used to detect the current flowing through a conductor. The magnetic sensor chip includes a magnetic sensor module, which includes a first part and a second part that are separated but electrically connected. The arrangement direction of the first part and the second part is perpendicular to the current flow direction in the conductor, and the first part and the second part are respectively located on opposite sides of the conductor along the current flow direction.

[0007] In one embodiment, the first portion and the second portion are the same size and are symmetrically distributed on opposite sides of the conductor along the direction of current flow.

[0008] In one embodiment, the magnetic sensor chip is connected to the bracket pins by wire bonding or flip-chip bonding with metal bumps.

[0009] In one embodiment, the current sensing device further includes an insulating partition disposed between the magnetic sensor chip and the bracket pins.

[0010] In one embodiment, the insulating partition is a glass insulating medium layer or a wafer with polyimide insulating medium layer, wherein the glass material is Schott AF32.

[0011] In one embodiment, the area of ​​the insulating partition is larger than the area of ​​the magnetic sensor chip.

[0012] In one embodiment, the current sensing device further includes a circuit board with circuit pins, and the bracket pins are electrically connected to and fixed to the circuit pins.

[0013] In one embodiment, the conductor is disposed in the circuit board.

[0014] In one embodiment, the conductor is formed as a single metal layer disposed in the circuit board, or is formed by interconnecting multiple metal layers in the circuit board.

[0015] In one embodiment, the current sensing device is suspended relative to the conductor.

[0016] In one embodiment, the width of the conductor in the region directly opposite the magnetic sensor module along the direction of current flow is smaller than the width of other regions.

[0017] In one embodiment, the first part and the second part are arranged side by side, both being square, and each has a first contact, a second contact, a third contact, and a fourth contact at its four corners. The first contact of the first part is connected to the fourth contact of the second part to form a first port of the magnetic sensor module; the second contact of the first part is connected to the third contact of the second part to form a fourth port of the magnetic sensor module; the third contact of the first part is connected to the second contact of the second part to form a third port of the magnetic sensor module; and the fourth contact of the first part is connected to the first contact of the second part to form a second port of the magnetic sensor module. The first port and the third port are driving terminals, and the second port and the fourth port are signal output terminals, or vice versa.

[0018] In one embodiment, the first part includes a first Hall unit and a second Hall unit, which are arranged side by side, are the same size, and are both square. Each of the four corners has a first electrode, a second electrode, a third electrode, and a fourth electrode in sequence. The first electrode of the first Hall unit is connected to the second electrode of the second Hall unit to form a first contact of the first part. The second electrode of the first Hall unit is connected to the third electrode of the second Hall unit to form a second contact of the first part. The third electrode of the first Hall unit is connected to the fourth electrode of the second Hall unit to form a third contact of the first part. The fourth electrode of the first Hall unit is connected to the first electrode of the second Hall unit to form a fourth contact of the first part. The second part has the same structure as the first part.

[0019] In one embodiment, the first part includes a first Hall unit, a second Hall unit, a third Hall unit, and a fourth Hall unit. The first Hall unit, the second Hall unit, the third Hall unit, and the fourth Hall unit are arranged in a grid pattern, are the same size, and are all square. Each of the four corners has a first electrode, a second electrode, a third electrode, and a fourth electrode. The first electrode of the first Hall unit is connected to the second electrode of the second Hall unit, the third electrode of the third Hall unit, and the fourth electrode of the fourth Hall unit to form a first contact point of the first part. The second electrode of the first Hall unit is connected to the third electrode of the second Hall unit, the fourth electrode of the third Hall unit, and the first electrode of the fourth Hall unit to form a second contact point of the first part. The third electrode of the first Hall unit is connected to the fourth electrode of the second Hall unit, the first electrode of the third Hall unit, and the second electrode of the fourth Hall unit to form a third contact point of the first part. The fourth electrode of the first Hall unit is connected to the first electrode of the second Hall unit, the second electrode of the third Hall unit, and the third electrode of the fourth Hall unit to form a fourth contact point of the first part. The second part has the same structure as the first part.

[0020] In one embodiment, the magnetic sensor module is a magnetoresistive sensor. The first part and the second part are both half-bridge structures and are interconnected to form a full-bridge structure. The first part includes a first magnetoresistive sensor and a second magnetoresistive sensor connected in series, and the second part includes a third magnetoresistive sensor and a fourth magnetoresistive sensor connected in series. The free end of the first magnetoresistive sensor and the free end of the fourth magnetoresistive sensor are connected to form a first port of the magnetic sensor module. The connection point of the first magnetoresistive sensor and the second magnetoresistive sensor forms a second port of the magnetic sensor module. The free end of the second magnetoresistive sensor and the free end of the third magnetoresistive sensor form a third port of the magnetic sensor module. The connection point of the third magnetoresistive sensor and the fourth magnetoresistive sensor forms a fourth port of the magnetic sensor module. The first port and the third port are driving terminals, and the second port and the fourth port are signal output terminals, or vice versa.

[0021] In one embodiment, there are multiple magnetic sensor modules, which are arranged adjacent to each other along the direction of current flow in the conductor.

[0022] The current sensing device described in this application includes a magnetic sensor module comprising a first part and a second part that are phase-separated but electrically connected. The arrangement direction of the first and second parts is perpendicular to the current flow direction in the conductor, and the first and second parts are located on opposite sides of the conductor along the current flow direction. A single magnetic sensor is sufficient to achieve selective output of the magnetic field generated only by the current to be measured, thus achieving the effect of resisting environmental magnetic field interference. Furthermore, it has the following advantages:

[0023] High magnetic field sensitivity, high product efficiency;

[0024] It has a fast response speed and can support high-speed application scenarios;

[0025] The back-end signal processing circuitry can be simplified;

[0026] The overall structure is relatively simple, the area is small, and the cost can be optimized;

[0027] It can be applied to various types of conductors under test;

[0028] It is also possible to freely expand and combine two or more magnetic sensor modules for use. Attached Figure Description

[0029] The accompanying drawings described herein are for illustrative purposes only and are not intended to limit the scope of this application in any way. Furthermore, the shapes and scales of the components in the drawings are merely illustrative to aid in understanding this application and do not specifically limit the shapes and scales of the components. Those skilled in the art, guided by the teachings of this application, can select various possible shapes and scales to implement this application according to specific circumstances. In the drawings:

[0030] Figure 1 A front view of a current sensing device provided in the first embodiment of this application;

[0031] Figure 2 A current sensing device provided in the first embodiment of this application Figure 1 A schematic diagram of the cross-sectional structure at the mid-section line Xs1;

[0032] Figure 3 A current sensing device provided in the first embodiment of this application Figure 1 A schematic diagram of the effect of magnetic field induction at the mid-section line Xs2;

[0033] Figure 4 This is a schematic diagram of the structure of a magnetic sensor module in a current sensing device provided in the first embodiment of this application;

[0034] Figure 5 A schematic diagram illustrating the output effect of a current sensing device in sensing an ambient magnetic field, provided in the first embodiment of this application;

[0035] Figure 6 A schematic diagram illustrating the effect of a current sensing device on sensing the current under test, provided in the first embodiment of this application;

[0036] Figure 7 A schematic diagram illustrating the output effect of a current sensing device for sensing the current under test, provided in the first embodiment of this application;

[0037] Figure 8 A schematic diagram of a specific embodiment of the first part of the magnetic sensor module in a current sensing device provided in the first embodiment of this application;

[0038] Figure 9 A schematic diagram of another specific embodiment of the first part of the magnetic sensor module in a current sensing device provided in the first embodiment of this application;

[0039] Figure 10 A front view of the magnetic sensor module in a current sensing device provided in the second embodiment of this application;

[0040] Figure 11 A side view of a current sensing device provided in the third embodiment of this application;

[0041] Figure 12 This is a front view of a current sensing device provided in the fourth embodiment of this application. Detailed Implementation

[0042] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this application.

[0043] Please also refer to Figure 1 and Figure 2 As shown, the first embodiment of this application provides a current sensing device, including: a magnetic sensor chip 401, a support pin 200 for carrying the magnetic sensor chip, and a package 101 for encapsulating the magnetic sensor chip 401 and the support pin 200. The magnetic sensor chip 401 is used to detect the current I flowing through a conductor 700. The magnetic sensor chip 401 includes a magnetic sensor module 500. The magnetic sensor module 500 includes a first part A and a second part B that are separated but electrically connected. The arrangement direction of the first part A and the second part B is perpendicular to the flow direction of the current I in the conductor 700, and the first part A and the second part B are respectively located on opposite sides of the conductor 700 along the flow direction of the current I.

[0044] In one embodiment, the first portion A and the second portion B are of the same size and are symmetrically distributed on opposite sides of the conductor 700 along the direction of current I flow, as can be seen from... Figure 1The first position L1 and the second position L2 are shown in the diagram. Of course, the first part A and the second part B can also be of different sizes and asymmetrically distributed. In such cases, the back-end of the current sensing device will use processing circuitry for adaptation. Furthermore, even if the first part A and the second part B are of the same size and symmetrically distributed, some misalignment may still inevitably exist. The back-end of the current sensing device will still use processing circuitry for adaptation to eliminate this misalignment.

[0045] Please combine Figure 1 and Figure 3 As shown, when a current to be measured is introduced into conductor 700 from its first end 701 and exited from its second end 702, the following occurs: Figure 3 As shown, a counter-clockwise magnetic field Bh is generated at the first position L1, producing a magnetic field component in the first direction +D1. This means the first part A of the magnetic sensor module detects a signal magnetic field in the first direction +D1. Meanwhile, the current to be measured at the second position L2 generates a magnetic field component in the opposite direction (-D1), meaning the second part B of the magnetic sensor module detects a signal magnetic field in the opposite direction (-D1). Both parts of the magnetic sensor module 500 are positioned in the region perpendicular to the magnetic field component; therefore, the sensitivity direction of the magnetic sensor module should be perpendicular to the plane where the magnetic sensor module 500 is located (D1 direction).

[0046] See also Figure 4 As shown, in one embodiment, the first part A and the second part B are arranged side by side, both being square, and each has a first contact e1, a second contact e2, a third contact e3, and a fourth contact e4 at its four corners. The first contact e1 of the first part A and the fourth contact e4 of the second part B are connected to form the first port P1 of the magnetic sensor module 500. The second contact e2 of the first part A and the third contact e3 of the second part B are connected to form the fourth port P4 of the magnetic sensor module 500. The third contact e3 of the first part A and the second contact e2 of the second part B are connected to form the third port P3 of the magnetic sensor module 500. The fourth contact e4 of the first part A and the first contact e1 of the second part B are connected to form the second port P2 of the magnetic sensor module 500. The first port P1 and the third port P3 are driving terminals, and the second port P2 and the fourth port P4 are signal output terminals, or vice versa.

[0047] In one specific embodiment, the first port P1 and the third port P3 are connected to the power supply terminal and the ground terminal, respectively, and the second port P2 and the fourth port P4 are signal output terminals. In the first part A, the current flows from the first contact e1 to the third contact e3, and in the second part B, the current flows from the fourth contact e4 to the second contact e2.

[0048] See also Figure 5 As shown, when a uniform magnetic field in the external environment generates, such as Figure 5 As shown in the figure above, the magnetic field changes consistently at the first position L1 and the second position L2 over time. In the magnetic sensor module 500, the potential changes at the second contact e2 of the first part A and the first contact e1 of the second part B are in phase with the magnetic field changes, generating a fluctuation of + / -ΔV. The potential changes at the fourth contact e4 of the first part A and the third contact e3 of the second part B are in phase with the magnetic field changes, but with the same amplitude. Figure 5 As shown in the diagram, the potential of the second port P2 (signal output terminal) is (A(e4)+B(e1)) / 2, and the potential of the fourth port P4 signal output terminal is (A(e2)+B(e3)) / 2. The overall output of the magnetic sensor module 500, Vout = P4 - P2 = 0. Figure 5 As shown in the diagram below, since the potential changes of the second port P2 and the fourth port P4 are completely identical, no signal output is generated by the uniform interference magnetic field in the external environment, thus achieving the function of external magnetic field anti-interference.

[0049] Please refer to the following at the same time. Figure 6 and Figure 7 As shown, when a current to be measured is generated inside conductor 700, such as Figure 6 As shown in the figure above, the vertical magnetic field component BD1 generated by the measured current changes with time, varying by + / -ΔBh according to the change of the measured current in conductor 700. At the first position L1, it is in phase with the current change, while at the second position L2, it is out of phase with the current change. In this magnetic sensor module 500, the potential of the second contact e2 of the first part A changes the same as the potential of the third contact e3 of the second part B, and is in phase with the change of the measured current; the potential of the fourth contact e4 of the first part A changes the same as the potential of the first contact e1 of the second part B, and is out of phase with the change of the measured current. The output of the second port P2 is (A(e4)+B(e1)) / 2 with an amplitude of (ΔV), and the output of the fourth port P4 is (A(e2)+B(e3)) / 2 with an amplitude of (ΔV). Figure 7 As shown in the middle figure; the overall output Vout of the magnetic sensor module 500 is Vout = P4 - P2, with an amplitude of 2 (ΔV). The phase of the output waveform is the same as that of the current to be measured, as shown in the figure. Figure 7 As shown in the image below.

[0050] See also Figure 8As shown, in a specific embodiment, the first part A includes a first Hall unit 801 and a second Hall unit 802. The first Hall unit 801 and the second Hall unit 802 are arranged side by side, are the same size, and are both square. Each of the four corners has a first electrode 901, a second electrode 902, a third electrode 903, and a fourth electrode 904 in sequence. The first electrode 901 of the first Hall unit 801 is connected to the second electrode 902 of the second Hall unit 802 to form a first contact e1 of the first part A. The second electrode 902 of the first Hall unit 801 is connected to the third electrode 903 of the second Hall unit 802 to form a second contact e2 of the first part A. The third electrode 903 of the first Hall unit 801 is connected to the fourth electrode 904 of the second Hall unit 802 to form a third contact e3 of the first part A. The fourth electrode 904 of the first Hall unit 801 is connected to the first electrode 901 of the second Hall unit 802 to form a fourth contact e4 of the first part A. The second part B has the same structure as the first part A.

[0051] See also Figure 9 As shown, in another specific embodiment, the first part A includes a first Hall unit 801, a second Hall unit 802, a third Hall unit 803, and a fourth Hall unit 804. The first Hall unit 801, second Hall unit 802, third Hall unit 803, and fourth Hall unit 804 are arranged in a grid pattern, are the same size, and are all square. Each of the four corners has a first electrode 901, a second electrode 902, a third electrode 903, and a fourth electrode 904. The first electrode 901 of the first Hall unit 801, the second electrode 902 of the second Hall unit 802, the third electrode 903 of the third Hall unit 803, and the fourth electrode 904 of the fourth Hall unit 804 are connected to form a first contact point e1 of the first part A. The second electrode 902 of the first Hall unit 801 and the second electrode 904 of the fourth Hall unit 804 are connected to form a first contact point e1 of the first part A. The third electrode 903 of the Hall unit 802, the fourth electrode 904 of the third Hall unit 803, and the first electrode 901 of the fourth Hall unit 804 are connected to form the second contact e2 of the first part A. The third electrode 903 of the first Hall unit 801, the fourth electrode 904 of the second Hall unit 802, the first electrode 901 of the third Hall unit 803, and the second electrode 902 of the fourth Hall unit 802 are connected to form the third contact e3 of the first part A. The fourth electrode 904 of the first Hall unit 801, the first electrode 901 of the second Hall unit 802, the second electrode 902 of the third Hall unit 803, and the third electrode 903 of the fourth Hall unit 804 are connected to form the fourth contact e4 of the first part A. The second part B has the same structure as the first part A.

[0052] See also Figure 10 As shown, in the second embodiment, the magnetic sensor module 500 is a magnetoresistive sensor. The first part A and the second part B are both half-bridge structures and interconnected to form a full-bridge structure. The first part A includes a first magnetoresistor R1 and a second magnetoresistor R2 connected in series. The second part includes a third magnetoresistor R3 and a fourth magnetoresistor R4 connected in series. The free end of the first magnetoresistor R1 and the free end of the fourth magnetoresistor R4 form the first port P1 of the magnetic sensor module 500. The connection point of the first magnetoresistor R2 and the second magnetoresistor R2 forms the second port P2 of the magnetic sensor module 500. The free end of the second magnetoresistor R2 and the free end of the third magnetoresistor R3 form the third port P3 of the magnetic sensor module 500. The connection point of the third magnetoresistor R3 and the fourth magnetoresistor R4 forms the fourth port P4 of the magnetic sensor module 500. The first port P1 and the third port P3 are driving terminals, and the second port P2 and the fourth port P4 are signal output terminals, or vice versa. Other structures are the same as in the first embodiment.

[0053] Please refer back to this. Figure 1 and Figure 2 As shown, in one embodiment, the magnetic sensor chip 401 is connected to the bracket pins 200 by a metal wire bonding. This is because the magnetic sensor chip 401 includes not only the magnetic sensor module 500 but also many other circuits and has numerous electrodes, such as... Figure 1 The chip electrodes 403a, 403b, 403c, 403d, 403e, 403f, 403g, and 403h are shown to electrically connect the circuitry in the magnetic sensor chip 401 to external sources. The support pins 200 serve both to support the magnetic sensor chip 401 and to electrically connect it to external sources, thus having multiple electrical pins 201, 202, 203, 204, 205, 206, 207, and 208. Figure 1 In the specific embodiment shown, the chip electrodes 403a, 403b, 403c, 403d, 403e, 403f, 403g, and 403h are connected to the electrical pins 201, 202, 203, 204, 205, 206, 207, and 208 via wire bonding to achieve electrical connection of the magnetic sensor chip 401 to the outside. Alternatively, the magnetic sensor chip 401 and the bracket pins 200 can also be connected via flip-chip bonding.

[0054] In one embodiment, the current sensing device further includes an insulating partition 402 disposed between the magnetic sensor chip 401 and the support pin 200 to form electrical insulation between the support pin 200 and the magnetic sensor chip 401.

[0055] In one embodiment, the insulating partition 402 is a glass insulating dielectric layer, wherein the glass material is Schott AF32, and the overall pressure resistance of the insulating dielectric layer matches the performance of the polyimide tape. Alternatively, the insulating partition 402 is a wafer-based insulating dielectric layer with polyimide coating, and the overall pressure resistance of the insulating dielectric layer is determined by the thickness to which the polyimide can be coated.

[0056] In one embodiment, the area of ​​the insulating partition 402 is larger than the area of ​​the magnetic sensor chip 401 to ensure better electrical insulation.

[0057] In one embodiment, the current sensing device further includes a circuit board 601, on which circuit pins 301, 302, 303, 304, 305, 306, 307, and 308 are provided. The support pin 200 is electrically connected to and fixed to the circuit pins 301, 302, 303, 304, 305, 306, 307, and 308. Specifically, the electrical pins 201, 202, 203, 204, 205, 206, 207, and 208 are respectively soldered to the circuit pins 301, 302, 303, 304, 305, 306, 307, and 308.

[0058] In one embodiment, the current sensing device is suspended relative to the conductor 700, that is, the conductor 700 and the current sensing device have no direct contact relationship, and can be above or below the current sensing device.

[0059] See also Figure 11 As shown, in the third embodiment, the conductor 700 is disposed in the circuit board 601. Other structures are the same as in the first embodiment. In one specific embodiment, the conductor 700 is formed as a single metal layer disposed in the circuit board 601, or is formed by connecting multiple metal layers in the circuit board 601 to each other.

[0060] Please refer back to this. Figure 1 and Figure 2 As shown, in one embodiment, the width of the region of the conductor 700 directly opposite the magnetic sensor module 500 along the direction of current flow is smaller than the width of other regions, which is beneficial for amplifying the signal magnetic field.

[0061] See also Figure 12As shown, in the fourth embodiment, there are multiple magnetic sensor modules 500, and these multiple magnetic sensor modules 500 (referred to as 501 and 502 in the figure) are arranged adjacent to each other along the direction of current flow in the conductor 700. Other structures are the same as in the first embodiment.

[0062] The current sensing device described in this application includes a magnetic sensor module comprising a first part and a second part that are phase-separated but electrically connected. The arrangement direction of the first and second parts is perpendicular to the current flow direction in the conductor, and the first and second parts are located on opposite sides of the conductor along the current flow direction. A single magnetic sensor is sufficient to achieve selective output of the magnetic field generated only by the current to be measured, thus achieving the effect of resisting environmental magnetic field interference. Furthermore, it has the following advantages:

[0063] High magnetic field sensitivity, high product efficiency;

[0064] It has a fast response speed and can support high-speed application scenarios;

[0065] The back-end signal processing circuitry can be simplified;

[0066] The overall structure is relatively simple, the area is small, and the cost can be optimized;

[0067] It can be applied to various types of conductors under test;

[0068] It can also be freely expanded and configured with two or more magnetic sensor modules.

[0069] It should be understood that the above description is for illustrative purposes and not for limitation. Many embodiments and applications beyond the provided examples will be apparent to those skilled in the art upon reading the above description. Therefore, the scope of this teaching should not be determined by reference to the above description, but rather by reference to the foregoing claims and the full scope of their equivalents. For purposes of completeness, all articles and references, including patent applications and publications, are incorporated herein by reference. The omission of any aspect of the subject matter disclosed herein in the foregoing claims is not intended as a waiver of that subject matter, nor should it be construed as an indication that the applicant has not considered that subject matter as part of the disclosed subject matter.

Claims

1. A current sensing device, characterized in that, It includes: The magnetic sensor chip includes a support pin for carrying the magnetic sensor chip and a package for encapsulating the magnetic sensor chip and the support pin. The magnetic sensor chip is used to detect the current flowing through a conductor. The magnetic sensor chip includes a magnetic sensor module, which includes a first part and a second part that are phase-separated but directly electrically connected. The arrangement direction of the first part and the second part is perpendicular to the direction of current flow in the conductor, and the first part and the second part are located on opposite sides of the conductor along the direction of current flow. The first part includes a first position, and the second part includes a second position, wherein the magnetic field change at the first position is consistent with the magnetic field change at the second position; The current sensing device is suspended relative to the conductor; The first and second parts are arranged side by side, both being square, and each has a first contact, a second contact, a third contact, and a fourth contact at its four corners. The first contact of the first part connects to the fourth contact of the second part to form the first port of the magnetic sensor module; the second contact of the first part connects to the third contact of the second part to form the fourth port of the magnetic sensor module; the third contact of the first part connects to the second contact of the second part to form the third port of the magnetic sensor module; and the fourth contact of the first part connects to the first contact of the second part to form the second port of the magnetic sensor module. The first and third ports are driving terminals, and the second and fourth ports are signal output terminals, or vice versa. Both the first and second parts include Hall effect units.

2. The current sensing device as described in claim 1, characterized in that, The first and second parts are the same size and are symmetrically distributed on opposite sides of the conductor along the direction of current flow.

3. The current sensing device as described in claim 1, characterized in that, The magnetic sensor chip is connected to the bracket pins by wire bonding or flip-chip bonding with metal bumps.

4. The current sensing device as described in claim 1, characterized in that, The current sensing device also includes an insulating partition disposed between the magnetic sensor chip and the bracket pins.

5. The current sensing device as described in claim 4, characterized in that, The insulating partition is a glass insulating medium layer or a wafer with polyimide insulating medium layer, wherein the glass material is Schott AF32.

6. The current sensing device as described in claim 4, characterized in that, The area of ​​the insulating partition is larger than the area of ​​the magnetic sensor chip.

7. The current sensing device as claimed in claim 1, characterized in that, The current sensing device also includes a circuit board with circuit pins, and the bracket pins are electrically connected to and fixed to the circuit pins.

8. The current sensing device as described in claim 7, characterized in that, The conductor is disposed in the circuit board.

9. The current sensing device as described in claim 8, characterized in that, The conductor is formed as a single metal layer disposed in the circuit board, or is formed by connecting multiple metal layers in the circuit board to each other.

10. The current sensing device as claimed in claim 1, characterized in that, Along the direction of current flow, the width of the region of the conductor directly opposite the magnetic sensor module is smaller than the width of other regions.

11. The current sensing device as claimed in claim 1, characterized in that, The first part includes a first Hall unit and a second Hall unit, which are arranged side by side, are the same size, and are both square. Each of the four corners has a first electrode, a second electrode, a third electrode, and a fourth electrode in sequence. The first electrode of the first Hall unit is connected to the second electrode of the second Hall unit to form a first contact point of the first part. The second electrode of the first Hall unit is connected to the third electrode of the second Hall unit to form a second contact point of the first part. The third electrode of the first Hall unit is connected to the fourth electrode of the second Hall unit to form a third contact point of the first part. The fourth electrode of the first Hall unit is connected to the first electrode of the second Hall unit to form a fourth contact point of the first part. The second part has the same structure as the first part.

12. The current sensing device as claimed in claim 1, characterized in that, The first part includes a first Hall unit, a second Hall unit, a third Hall unit, and a fourth Hall unit. These four Hall units are arranged in a grid pattern, are the same size, and are all square. Each of the four corners has a first electrode, a second electrode, a third electrode, and a fourth electrode, respectively. The first electrode of the first Hall unit connects to the second electrode of the second Hall unit, the third electrode of the third Hall unit, and the fourth electrode of the fourth Hall unit to form a first contact point of the first part. The second electrode of the first Hall unit connects to the third electrode of the second Hall unit, the fourth electrode of the third Hall unit, and the first electrode of the fourth Hall unit to form a second contact point of the first part. The third electrode of the first Hall unit connects to the fourth electrode of the second Hall unit, the first electrode of the third Hall unit, and the second electrode of the fourth Hall unit to form a third contact point of the first part. The fourth electrode of the first Hall unit connects to the first electrode of the second Hall unit, the second electrode of the third Hall unit, and the third electrode of the fourth Hall unit to form a fourth contact point of the first part. The second part has the same structure as the first part.

13. The current sensing device as claimed in claim 1, characterized in that, The number of magnetic sensor modules is multiple, and the multiple magnetic sensor modules are arranged adjacent to each other along the direction of current flow in the conductor.

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