Low-E glass and its preparation method

Abstract

The present application relates to a low-emissivity glass and a method for preparing the same. The low-emissivity glass includes a glass substrate, and a barrier layer, a first dielectric layer, a silver-containing functional layer, a first stress relaxation layer, a metal slip layer, and a second stress relaxation layer that are sequentially stacked on the surface of the glass substrate; the first stress relaxation layer includes one or more of zinc aluminum oxide, zinc oxide, zinc tin oxide, and tin oxide, the metal slip layer includes an alloy composed of one or more of nickel, chromium, molybdenum, titanium, niobium, and zirconium, and the second stress relaxation layer includes one or more of zinc aluminum oxide, zinc oxide, zinc tin oxide, and tin oxide. In the present application, by designing the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer on the surface of the silver-containing functional layer, the internal stress of the film layer on the surface of the glass substrate can be released, the influence of the internal stress on the crystallinity of the silver-containing functional layer can be reduced, and thus the crystallinity of the silver-containing functional layer can be improved, and the surface resistance of the low-emissivity glass can be reduced.

Description

Technical Field

[0001] This application relates to the technical field of glass, and in particular to a low-emissivity glass and a preparation method thereof. Background Art

[0002] Low-emissivity glass (Low-E glass) is widely used because of its high transmittance to visible light. With the increasing requirements of consumers for the conductivity of Low-E glass, the surface resistance of Low-E glass needs to be further reduced. Summary of the Invention

[0003] Based on this, it is necessary to provide a low-emissivity glass with a lower surface resistance and a preparation method thereof.

[0004] A low-emissivity glass includes a glass substrate, and a barrier layer, a first dielectric layer, a silver-containing functional layer, a first stress relaxation layer, a metal slip layer, and a second stress relaxation layer that are sequentially stacked on the surface of the glass substrate; the first stress relaxation layer includes one or more of aluminum zinc oxide, zinc oxide, zinc oxide tin, and tin oxide, the metal slip layer includes an alloy composed of one or more of nickel, chromium, molybdenum, titanium, niobium, and zirconium, and the second stress relaxation layer includes one or more of aluminum zinc oxide, zinc oxide, zinc oxide tin, and tin oxide.

[0005] In the above low-emissivity glass, by designing the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer on the surface of the silver-containing functional layer, the internal stress of the film layer on the surface of the glass substrate can be released, the influence of the internal stress on the crystallinity of the silver-containing functional layer can be reduced, and then the crystallinity of the silver-containing functional layer can be improved, and the surface resistance of the low-emissivity glass can be reduced.

[0006] Furthermore, through the design of the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer, the surface resistance of the low-emissivity glass is greatly reduced, and there is no need to additionally increase the thickness of the silver-containing functional layer to reduce the surface resistance. Therefore, the amount of silver used in the preparation process of the low-emissivity glass can be reduced, which is beneficial to promoting the reduction of the manufacturing cost of the low-emissivity glass.

[0007] In some embodiments, the thickness of the metal slip layer is 0.5 nm to 3 nm.

[0008] In some embodiments, the total thickness of the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer is 15 nm to 28 nm.

[0009] In some embodiments, the silver-containing functional layer includes one or more of silver, silver-copper alloy, silver-titanium alloy, and silver-aluminum alloy.

[0010] In some embodiments, the thickness of the silver-containing functional layer is 10 nm to 15 nm.

[0011] In some embodiments, the barrier layer comprises one or more of silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, titanium nitride, zinc oxide, zinc nitride, tin oxide, tin nitride, niobium oxide, and niobium nitride.

[0012] In some embodiments, the thickness of the barrier layer is 10 nm to 20 nm.

[0013] In some embodiments, the first dielectric layer comprises one or more of silicon nitride, zinc oxide, zinc tin oxide, and zinc aluminum oxide.

[0014] In some embodiments, the thickness of the first dielectric layer is 15 nm to 25 nm.

[0015] In some embodiments, the low-emissivity glass further comprises a seed layer located between the first dielectric layer and the functional layer; the seed layer comprises one or more of zinc oxide, zinc aluminum oxide, zinc titanium oxide, and indium tin oxide.

[0016] In some embodiments, the low-emissivity glass further comprises an antioxidant layer located between the silver-containing functional layer and the first stress relaxation layer; the antioxidant layer comprises an alloy composed of one or more of nickel, chromium, titanium, niobium, and zirconium.

[0017] In some embodiments, the low-emissivity glass further comprises a second dielectric layer located on the surface of the second stress relaxation layer away from the metal slip layer; the second dielectric layer comprises one or more of silicon nitride, silicon oxynitride, titanium oxide, zirconium oxide, zirconium silicon nitride, and zirconium silicon oxide.

[0018] A method for preparing the low-emissivity glass comprises the following steps: forming the barrier layer, the first dielectric layer, the silver-containing functional layer, the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer on the surface of the glass substrate in sequence by sputtering. Description of the Drawings

[0019] Figure 1 It is a schematic structural diagram of a low-emissivity glass in an embodiment of the present application.

[0020] Explanation of the marks in the figure:

[0021] 10. Low-emissivity glass; 101. Glass substrate; 102. Barrier layer; 103. First dielectric layer; 104. Silver-containing functional layer; 105. First stress relaxation layer; 106. Metal slip layer; 107. Second stress relaxation layer; 108. Seed layer; 109. Antioxidant layer; 110. Second dielectric layer. Detailed Embodiments

[0022] To make the above objects, features, and advantages of the present application more obvious and understandable, the following provides a detailed description of the specific embodiments of the present application. Many specific details are set forth in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0023] In the present application, unless otherwise clearly specified and limited, terms such as "install", "connect", "couple", "fix", etc. shall be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0024] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0025] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs. The terms used in the description of this application herein are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0026] Please refer to Figure 1, an embodiment of the present application provides a low-emissivity glass 10. The low-emissivity glass 10 includes a glass substrate 101, and a barrier layer 102, a first dielectric layer 103, a silver-containing functional layer 104, a first stress relaxation layer 105, a metal slip layer 106, and a second stress relaxation layer 107 that are sequentially stacked on the surface of the glass substrate 101; the first stress relaxation layer 105 includes one or more of zinc aluminum oxide (ZnAlOx), zinc oxide (ZnOx), zinc tin oxide (ZnSnOx), and tin oxide (SnOx), the metal slip layer 106 includes an alloy composed of one or more of nickel (Ni), chromium (Cr), molybdenum (Mo), titanium (Ti), niobium (Nb), and zirconium (Zr), and the second stress relaxation layer 107 includes one or more of zinc aluminum oxide (ZnAlOx), zinc oxide (ZnOx), zinc tin oxide (ZnSnOx), and tin oxide (SnOx).

[0027] In the low-emissivity glass 10 of this embodiment, by designing the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 on the surface of the silver-containing functional layer 104, the internal stress of the film layer on the surface of the glass substrate 101 can be released, the influence of the internal stress on the crystallinity of the silver-containing functional layer 104 can be reduced, and thus the crystallinity of the silver-containing functional layer 104 can be improved, and the surface resistance of the low-emissivity glass 10 can be reduced.

[0028] It can be understood that usually, the greater the thickness of the silver-containing functional layer 104, the lower the surface resistance of the low-emissivity glass 10, but correspondingly, the manufacturing cost of the low-emissivity glass 10 will increase. In this embodiment, further, through the design of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107, the surface resistance of the low-emissivity glass 10 has been significantly reduced, and there is no need to additionally increase the thickness of the silver-containing functional layer 104 to reduce the surface resistance. Therefore, the amount of silver used in the preparation process of the low-emissivity glass 10 can be reduced, which is beneficial to promoting the reduction of the manufacturing cost of the low-emissivity glass 10.

[0029] In the present application, by designing the structure of the low-emissivity glass 10, the low-emissivity glass 10 can have a lower surface resistance, a lower emissivity, a lower thickness of the silver-containing functional layer, and a lower film layer thickness.

[0030] It can be understood that the film layer of the low-emissivity glass 10 in the present application refers to the general term of the layers on the surface of the glass substrate 101, and the film layer thickness refers to the total thickness of the layers on the surface of the glass substrate 101. For example, in some embodiments, the surface resistance of the low-emissivity glass 10 can be below 3Ω, the emissivity of the low-emissivity glass 10 can be below 0.03, the thickness of the silver-containing functional layer 104 in the low-emissivity glass 10 can be below 15nm, and the thickness of the film layer in the low-emissivity glass 10 can be below 115nm.

[0031] Furthermore, in the present application, by designing the structure of the low-emissivity glass 10, on the basis of obtaining the low-emissivity glass 10 with a low surface resistance, the film layer can have a small thickness, which is beneficial to improving the production efficiency of the low-emissivity glass 10 and reducing the production cost of the low-emissivity glass 10.

[0032] Furthermore, in the present application, by designing the first stress relaxation layer 105, the metal slip layer 106 and the second stress relaxation layer 107 on the surface of the silver-containing functional layer 104, the processability resistance of the film layer in the low-emissivity glass 10 can be improved, and the stable processing of the low-emissivity glass 10 can be promoted.

[0033] It can be understood that, in some embodiments, the film layer in the glass substrate 101 is located on one surface of the glass substrate 101.

[0034] In some embodiments, the thickness of the metal slip layer 106 is 0.5 nm to 3 nm. Optionally, the thickness of the metal slip layer 106 can be 0.5 nm, 0.8 nm, 1 nm, 1.2 nm, 1.5 nm, 1.8 nm, 2 nm, 2.2 nm, 2.5 nm, 2.8 nm, 3 nm, etc. It can be understood that the thickness of the metal slip layer 106 can also be other choices within the range of 0.5 nm to 3 nm. When the thickness of the metal slip layer 106 is within this range, the low-emissivity glass 10 can have a high visible light transmittance on the basis of fully exerting the function of the metal slip layer 106. That is, in the present embodiment, by designing the structure of the low-emissivity glass 10, the low-emissivity glass 10 can take into account both a low surface resistance and a high visible light transmittance. For example, in some embodiments, the visible light transmittance of the low-emissivity glass 10 can be above 80%.

[0035] It can be understood that, in the design of the low-emissivity glass 10, by increasing the thickness of the silver-containing functional layer 104, the surface resistance of the low-emissivity glass 10 can be reduced. However, as the thickness of the silver-containing functional layer 104 in the low-emissivity glass 10 increases, the visible light transmittance of the low-emissivity glass 10 will decrease accordingly. In the present application, by designing the structure of the low-emissivity glass 10, on the basis of not requiring an additional increase in the thickness of the silver-containing functional layer 104, the low-emissivity glass 10 takes into account both a low surface resistance and a high visible light transmittance.

[0036] In some embodiments, the total thickness of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 is 15 nm to 28 nm. Optionally, the total thickness of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 can be 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 28 nm, etc. It can be understood that other selections can also be made for the total thickness of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 within the range of 15 nm to 28 nm.

[0037] In some embodiments, the thickness of the first stress relaxation layer 105 is 7 nm to 15 nm. For example, the thickness of the first stress relaxation layer 105 can be 7 nm, 7.5 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc. It can be understood that other selections can also be made for the thickness of the first stress relaxation layer 105 within the range of 7 nm to 15 nm.

[0038] In some embodiments, the thickness of the second stress relaxation layer 107 is 7 nm to 15 nm. For example, the thickness of the second stress relaxation layer 107 can be 7 nm, 7.5 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc. It can be understood that other selections can also be made for the thickness of the second stress relaxation layer 107 within the range of 7 nm to 15 nm.

[0039] In some embodiments, the thicknesses of the first stress relaxation layer 105 and the second stress relaxation layer 107 are equal. Optionally, the materials of the first stress relaxation layer 105 and the second stress relaxation layer 107 are the same.

[0040] In some embodiments, the silver-containing functional layer 104 includes one or more of silver (Ag), silver-copper alloy (AgCu), silver-titanium alloy (AgTi), and silver-aluminum alloy (AgAl).

[0041] In some embodiments, the thickness of the silver-containing functional layer 104 is 10 nm to 15 nm. When the thickness of the silver-containing functional layer 104 is small, it is difficult to fully exert the function of the silver-containing functional layer 104. When the thickness of the silver-containing functional layer 104 is large, it will increase the manufacturing cost of the low-emissivity glass 10 and at the same time reduce the visible light transmittance of the low-emissivity glass 10. When the thickness of the silver-containing functional layer 104 is in the range of 10 nm to 15 nm, the function of the silver-containing functional layer 104 can be fully exerted, and at the same time, the low-emissivity glass 10 has a high visible light transmittance. Optionally, the thickness of the silver-containing functional layer 104 can be 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, etc. It can be understood that other selections can also be made for the thickness of the silver-containing functional layer 104 within the range of 10 nm to 15 nm.

[0042] In some embodiments, the barrier layer 102 includes one or more of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiNxOy), titanium oxide (TiOx), titanium nitride (TiNx), zinc oxide (ZnOx), zinc nitride (ZnNx), tin oxide (SnOx), tin nitride (SnNx), niobium oxide (NbOx), and niobium nitride (NbNx). It can be understood that the barrier layer 102 can be an alkali metal barrier layer. The alkali metal barrier layer can block the precipitation of alkali metals in the glass substrate 101, which is beneficial to keeping the performance of the low-emissivity glass 10 relatively stable.

[0043] As some examples of the thickness of the barrier layer 102, the thickness of the barrier layer 102 is 10 nm to 20 nm. Optionally, the thickness of the barrier layer 102 can be 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, etc. It can be understood that other selections can also be made for the thickness of the barrier layer 102 within the range of 10 nm to 20 nm.

[0044] In some embodiments, the first dielectric layer 103 includes one or more of silicon nitride (SiNx), zinc oxide (ZnOx), zinc tin oxide (ZnSnOx), and zinc aluminum oxide (ZnAlOx).

[0045] As some examples of the thickness of the first dielectric layer 103, the thickness of the first dielectric layer 103 is 15 nm to 25 nm. Optionally, the thickness of the first dielectric layer 103 can be 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, etc. It can be understood that other selections can also be made for the thickness of the first dielectric layer 103 within the range of 15 nm to 25 nm.

[0046] In some embodiments, the low-emissivity glass 10 further includes a seed layer 108, and the seed layer 108 is located between the first dielectric layer 103 and the functional layer. The seed layer 108 includes one or more of zinc oxide (ZnOx), zinc aluminum oxide (ZnAlOx, AZO), zinc titanium oxide (ZnTiOx, TZO), and indium tin oxide (SnInOx, ITO). By providing the seed layer 108, the rapid crystallization growth of the silver-containing functional layer 104 can be promoted, which is beneficial to further improving the crystallinity of the silver-containing functional layer 104 and reducing the surface resistance of the low-emissivity glass 10.

[0047] As some examples of the thickness of the seed layer 108, the thickness of the seed layer 108 is 5 nm to 10 nm. Optionally, the thickness of the seed layer 108 can be 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, etc. It can be understood that other selections can also be made for the thickness of the seed layer 108 within the range of 5 nm to 10 nm.

[0048] In some embodiments, the surface roughness Ra of the seed layer 108 facing the functional layer is ≤ 1 nm. When the surface roughness Ra of the seed layer 108 facing the functional layer is ≤ 1 nm, the rapid crystallization growth of the silver-containing functional layer 104 can be further promoted, which is beneficial to further improving the crystallinity of the silver-containing functional layer 104 and reducing the surface resistance of the low-emissivity glass 10.

[0049] In some embodiments, the low-emissivity glass 10 further includes an antioxidant layer 109, and the antioxidant layer 109 is located between the silver-containing functional layer 104 and the first stress relaxation layer 105. The antioxidant layer 109 includes an alloy composed of one or more of nickel (Ni), chromium (Cr), titanium (Ti), niobium (Nb), and zirconium (Zr). The antioxidant layer 109 can improve the antioxidant ability of the film layer on the surface of the glass substrate 101 and improve the structural stability of the film layer on the surface of the glass substrate 101.

[0050] As some examples of the thickness of the antioxidant layer 109, the thickness of the antioxidant layer 109 is 1 nm to 3 nm. For example, the thickness of the antioxidant layer 109 can be 1 nm, 1.2 nm, 1.5 nm, 1.8 nm, 2 nm, 2.2 nm, 2.5 nm, 2.8 nm, 3 nm, etc. It can be understood that other selections can also be made for the thickness of the antioxidant layer 109 within the range of 1 nm to 3 nm.

[0051] In some embodiments, the low-emissivity glass 10 further includes a second dielectric layer 110, which is located on the surface of the second stress relaxation layer 107 away from the metal slip layer 106; the second dielectric layer 110 includes one or more of silicon nitride (SiNx), silicon oxynitride (SiNxOy), titanium oxide (TiOx), zirconium oxide (ZrOx), zirconium silicon nitride (ZrSiNx), and zirconium silicon oxide (ZrSiOx).

[0052] In some embodiments, the thickness of the second dielectric layer 110 is 20 nm to 33 nm. Optionally, the thickness of the second dielectric layer 110 can be 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, 31 nm, 32 nm, 33 nm, etc. It can be understood that other selections can also be made for the thickness of the second dielectric layer 110 within the range of 20 nm to 33 nm.

[0053] Another embodiment of the present application provides another low-emissivity glass 10. The low-emissivity glass 10 includes a glass substrate 101, and a barrier layer 102, a first dielectric layer 103, a seed layer 108, a silver-containing functional layer 104, an antioxidant layer 109, a first stress relaxation layer 105, a metal slip layer 106, a second stress relaxation layer 107, and a second dielectric layer 110 that are sequentially stacked on the surface of the glass substrate 101. Optionally, the thickness of the barrier layer 102 is 10 nm to 20 nm, the thickness of the first dielectric layer 103 is 15 nm to 25 nm, the thickness of the seed layer 108 is 5 nm to 10 nm, the surface roughness Ra of the seed layer 108 facing the silver-containing functional layer 104 is ≤ 1 nm, the thickness of the silver-containing functional layer 104 is 10 nm to 15 nm, the thickness of the antioxidant layer 109 is 1 nm to 3 nm, the thickness of the metal slip layer 106 is 0.5 nm to 3 nm, the total thickness of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 is 15 nm to 25 nm, and the thickness of the second dielectric layer 110 is 20 nm to 33 nm.

[0054] Another embodiment of the present application provides a preparation method for the above-mentioned low-emissivity glass 10. The preparation method includes the following steps: By sputtering, a barrier layer 102, a first dielectric layer 103, a silver-containing functional layer 104, a first stress relaxation layer 105, a metal slip layer 106, and a second stress relaxation layer 107 are sequentially formed on the surface of the glass substrate 101.

[0055] It can be understood that magnetron sputtering can be used for sputtering. Optionally, the protective gas for sputtering can be argon, krypton, xenon, etc. It can also be understood that the sputtering conditions can adopt conventional sputtering conditions.

[0056] In some embodiments, the method for preparing the low-emissivity glass 10 includes the following steps: by means of sputtering, a barrier layer 102, a first dielectric layer 103, a seed layer 108, a silver-containing functional layer 104, an antioxidant layer 109, a first stress relaxation layer 105, a metal slip layer 106, a second stress relaxation layer 107, and a second dielectric layer 110 are sequentially formed on the surface of the glass substrate 101. Among them, the thickness of the barrier layer 102 is 10 nm to 20 nm, the thickness of the first dielectric layer 103 is 15 nm to 25 nm, the thickness of the seed layer 108 is 5 nm to 10 nm, the surface roughness Ra of the seed layer 108 facing the silver-containing functional layer 104 is ≤1 nm, the thickness of the silver-containing functional layer 104 is 10 nm to 15 nm, the thickness of the antioxidant layer 109 is 1 nm to 3 nm, the thickness of the metal slip layer 106 is 0.5 nm to 3 nm, the total thickness of the first stress relaxation layer 105, the metal slip layer 106, and the second stress relaxation layer 107 is 15 nm to 28 nm, and the thickness of the second dielectric layer 110 is 20 nm to 33 nm.

[0057] Example 1

[0058] In this example, by means of sputtering, a barrier layer, a first dielectric layer, a seed layer, a silver-containing functional layer, an antioxidant layer, a first stress relaxation layer, a metal slip layer, a second stress relaxation layer, and a second dielectric layer are sequentially formed on the surface of the glass substrate to obtain the low-emissivity glass of this example.

[0059] Among them, the low-emissivity glass includes a glass substrate, and a barrier layer, a first dielectric layer, a seed layer, a silver-containing functional layer, an antioxidant layer, a first stress relaxation layer, a metal slip layer, a second stress relaxation layer, and a second dielectric layer that are sequentially stacked on one surface of the glass substrate. The materials and thicknesses of the barrier layer, the first dielectric layer, the seed layer, the silver-containing functional layer, the antioxidant layer, the first stress relaxation layer, the metal slip layer, the second stress relaxation layer, and the second dielectric layer are as shown in Table 1.

[0060] Examples 2 to 5

[0061] Compared with Example 1, the differences in Examples 2 to 5 are that the materials and thicknesses of the barrier layer, the first dielectric layer, the seed layer, the silver-containing functional layer, the antioxidant layer, the first stress relaxation layer, the metal slip layer, the second stress relaxation layer, and the second dielectric layer are different, as specifically shown in Table 1.

[0062] Comparative Example 1

[0063] In this comparative example, by means of sputtering, a barrier layer, a first dielectric layer, a seed layer, a silver-containing functional layer, an antioxidant layer, a stress relaxation layer, and a second dielectric layer are sequentially formed on the surface of the glass substrate to obtain the low-emissivity glass of this example.

[0064] Among them, the low-emissivity glass includes a glass substrate, and a barrier layer, a first dielectric layer, a seed layer, a silver-containing functional layer, an antioxidant layer, a stress relaxation layer, and a second dielectric layer that are sequentially stacked on one surface of the glass substrate. The low-emissivity glass does not include a metal slip layer. The materials and thicknesses of the barrier layer, the first dielectric layer, the seed layer, the silver-containing functional layer, the antioxidant layer, the stress relaxation layer, and the second dielectric layer are shown in Table 1.

[0065] Test examples

[0066] The visible light transmittance, emissivity, and surface resistance of the low-emissivity glass obtained in the examples and comparative examples were tested, and the results are shown in Table 1.

[0067] Table 1

[0068]

[0069] It can be understood that in Table 1, the low-emissivity glass of Comparative Example 1 does not include a metal slip layer, the material of the stress relaxation layer is ZnO, and the thickness is 20 nm.

[0070] It can be understood that the unit of thickness in Table 1 is nm. The unit of visible light transmittance is %. The unit of surface resistance is Ω.

[0071] In Table 1, by comparing the surface resistance of Examples 1 to 5 with that of Comparative Example 1, it can be seen that the surface resistance of Examples 1 to 5 is smaller, and the thickness of the silver-containing functional layer is also smaller. It shows that in Examples 1 to 5, by designing the structure of the low-emissivity glass, a smaller surface resistance can be obtained on the basis of a smaller thickness of the silver-containing functional layer.

[0072] By comparing the visible light transmittance of Examples 1 to 4 with that of Comparative Example 5, it can be seen that when the thickness of the metal slip layer is 0.5 nm to 3 nm, the low-emissivity glass has a higher visible light transmittance.

[0073] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0074] The above-described embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application.

Claims

1. A low-emissivity glass, characterized in that, It includes a glass substrate, and a barrier layer, a first dielectric layer, a silver-containing functional layer, a first stress relaxation layer, a metal slip layer, and a second stress relaxation layer that are sequentially stacked on the surface of the glass substrate; the first stress relaxation layer includes one or more of zinc aluminum oxide and zinc oxide, the metal slip layer includes an alloy composed of one or more of nickel, chromium, molybdenum, titanium, niobium, and zirconium, and the second stress relaxation layer includes one or more of zinc aluminum oxide and zinc oxide; the first dielectric layer includes one or more of silicon nitride, zinc oxide, zinc tin oxide, and zinc aluminum oxide; The low-emissivity glass further includes a seed layer, and the seed layer is located between the first dielectric layer and the silver-containing functional layer; the seed layer includes one or more of zinc oxide, zinc aluminum oxide, zinc titanium oxide, and indium tin oxide; the thickness of the seed layer is 5 nm to 10 nm; The low-emissivity glass further includes a second dielectric layer, and the second dielectric layer is located on the surface of the second stress relaxation layer away from the metal slip layer; the second dielectric layer includes one or more of silicon nitride, silicon oxynitride, titanium oxide, zirconium oxide, zirconium silicon nitride, and zirconium silicon oxide; The silver-containing functional layer includes one or more of silver, silver copper alloy, silver titanium alloy, and silver aluminum alloy; the thickness of the silver-containing functional layer is 10 nm to 15 nm; The thickness of the metal slip layer is 0.5 nm to 3 nm; the total thickness of the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer is 15 nm to 28 nm.

2. The low-emissivity glass according to claim 1, wherein The barrier layer includes one or more of silicon nitride, silicon oxide, silicon oxynitride, titanium oxide, titanium nitride, zinc oxide, zinc nitride, tin oxide, tin nitride, niobium oxide, and niobium nitride.

3. The low-emissivity glass according to claim 1, wherein The thickness of the barrier layer is 10 nm to 20 nm.

4. The low-emissivity glass according to claim 1, characterized in that, The thickness of the first dielectric layer is 15 nm to 25 nm.

5. The low-emissivity glass according to claim 1, wherein The thickness of the second dielectric layer is 20 nm to 33 nm.

6. The low-emissivity glass according to any one of claims 1 to 5, characterized in that, The low-emissivity glass further includes an antioxidant layer, and the antioxidant layer is located between the silver-containing functional layer and the first stress relaxation layer; the antioxidant layer includes an alloy composed of one or more of nickel, chromium, titanium, niobium, and zirconium.

7. The low-emissivity glass according to claim 6, wherein, The thickness of the antioxidant layer is 1 nm to 3 nm.

8. A method for preparing the low-emissivity glass according to any one of claims 1 to 7, characterized in that, It includes the following steps: by means of sputtering, the barrier layer, the first dielectric layer, the silver-containing functional layer, the first stress relaxation layer, the metal slip layer, and the second stress relaxation layer are sequentially formed on the surface of the glass substrate.

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