Mask and method of manufacturing the same, method of manufacturing josephson junction

Abstract

This invention discloses a mask and its manufacturing method, as well as a method for manufacturing a Josephson junction. The mask includes: a first photoresist layer formed on a substrate, having a through window; and a second photoresist layer formed on the first photoresist layer, having a preset pattern set of interconnected windows formed in the region corresponding to the window, the preset pattern set including multiple window patterns distributed in the same direction; the width of each window pattern in the first direction is less than a first distance; and the distance between each window pattern and its adjacent window pattern in the first direction is less than the first distance. Based on this, when using this mask to manufacture a Josephson junction, the second projection area of ​​each window pattern on the substrate can overlap only with the first projection area of ​​the adjacent window pattern on the substrate, forming a Josephson junction in the overlapping area, greatly improving the efficiency of Josephson junction manufacturing.

Description

Technical Field

[0001] This invention relates to the field of quantum chip manufacturing technology, and in particular to a mask and its manufacturing method, and a method for manufacturing Josephson junctions. Background Technology

[0002] A Josephson junction consists of two superconducting layers sandwiched by a very thin barrier layer. The traditional manufacturing process for a Josephson junction involves two oblique evaporation deposition processes. First, two cross-shaped channels are exposed on a photoresist substrate. Then, oblique evaporation is performed on each channel to form two overlapping superconducting layers. Before the second oblique evaporation, a barrier layer needs to be formed on the surface of the first superconducting layer by oxidation.

[0003] However, the current manufacturing efficiency of Josephson junctions is low and cannot meet existing demand. Summary of the Invention

[0004] The purpose of this invention is to provide a mask and its manufacturing method, as well as a method for manufacturing Josephson junctions, to solve the problem of low manufacturing efficiency of Josephson junctions in the prior art.

[0005] To solve the above-mentioned technical problems, the present invention provides a mask, comprising:

[0006] A first photoresist layer is formed on a substrate, and the first photoresist layer has a through window.

[0007] A second photoresist layer is formed on the first photoresist layer. A preset set of patterns connected to the window is formed in the area of ​​the second photoresist layer corresponding to the window. The preset set of patterns includes multiple window patterns. Each window pattern is distributed in the same direction.

[0008] The preset graphic set is still located within the area of ​​the second photoresist layer after being translated a first distance in the first direction, and the first direction is parallel to the second photoresist layer; the width of each window graphic in the first direction is less than the first distance; the distance between each window graphic and the window graphic adjacent in the first direction is less than the first distance.

[0009] According to some examples of this application, the width of the window graphic in the first direction is:

[0010] The maximum distance between any two points in the window graphic located in the first direction.

[0011] According to some examples of this application, when the first photoresist layer is disposed on the surface of the substrate, the distance between corresponding points of the window pattern on the surface of the substrate is equal to the first distance, and the direction of the straight line where the corresponding point is located is parallel to the first direction.

[0012] In a second aspect, this application provides an example of a mask comprising:

[0013] A first silicon layer is formed on a substrate, and the first silicon layer has a through first window.

[0014] A silicon dioxide layer is formed on the first silicon layer, and the silicon dioxide layer has a second window that is through and communicates with the first window;

[0015] A second silicon layer is formed on the silicon dioxide layer. A preset set of graphics connected to the second window is formed in the region of the second silicon layer corresponding to the second window. The preset set of graphics includes multiple window graphics. Each window graphic is distributed in the same direction.

[0016] The preset graphic set is still located within the region of the second silicon layer after being translated a first distance in the first direction, and the first direction is parallel to the second silicon layer; the width of each window graphic in the first direction is less than the first distance; the distance between each window graphic and the window graphic adjacent in the first direction is less than the first distance.

[0017] According to some examples of this application, when the first silicon layer is disposed on the surface of the substrate, the distance between corresponding points of the window pattern on the surface of the substrate is equal to the first distance, and the direction of the straight line where the corresponding point is located is parallel to the first direction.

[0018] In a third aspect, this application provides an example of a method for manufacturing a mask, comprising:

[0019] A first photoresist layer and a second photoresist layer are formed in a stack, wherein the first photoresist layer is formed on a substrate;

[0020] A set of pre-defined patterns is formed on the second photoresist layer. The set of pre-defined patterns includes multiple window patterns. Each window pattern is distributed in the same direction. The set of pre-defined patterns is still located within the region of the second photoresist layer after being translated a first distance in a first direction, and the first direction is parallel to the second photoresist layer. The width of each window pattern in the first direction is less than the first distance. The distance between each window pattern and the window pattern adjacent in the first direction is less than the first distance.

[0021] A through window is formed on the first photoresist layer using the preset pattern set, such that the preset pattern set is located within the area corresponding to the window.

[0022] According to some examples of this application, forming a through-type preset pattern set on the second photoresist layer includes:

[0023] The preset pattern set is exposed on the second photoresist layer;

[0024] The second photoresist layer of the preset pattern set is removed by development to form a through preset pattern set.

[0025] According to some examples of this application, forming a through window on the first photoresist layer using the preset pattern set includes:

[0026] The first photoresist layer is developed using the preset pattern set to remove the unexposed first photoresist layer until the through window is formed.

[0027] In a fourth aspect, this application provides an example of a method for manufacturing a mask, comprising:

[0028] A first silicon layer, a silicon dioxide layer, and a second silicon layer are sequentially formed, wherein the first silicon layer is formed on a substrate;

[0029] The first silicon layer and the second silicon layer are etched respectively to form a through-hole first window on the first silicon layer and a through-hole preset pattern set on the second silicon layer. The preset pattern set includes multiple window patterns. Each window pattern is distributed in the same direction. The preset pattern set is still located within the region of the second silicon layer after being translated a first distance in a first direction, and the first direction is parallel to the second silicon layer. The width of each window pattern in the first direction is less than the first distance. The distance between each window pattern and the window pattern adjacent in the first direction is less than the first distance.

[0030] By etching away the silicon dioxide layer within the first window, a second window connected to the first window is formed, so that the preset graphic set is located within the area corresponding to the second window.

[0031] According to some examples of this application, the second silicon layer is etched using a photoresist layer as a mask.

[0032] According to some examples of this application, an inorganic layer is used as a mask to etch the first silicon layer.

[0033] In a fifth aspect, this application provides an example of a method for manufacturing a Josephson junction, comprising:

[0034] A mask according to the first aspect or the second aspect is disposed on a substrate, or a mask is formed on the substrate according to the manufacturing method of the third aspect or the manufacturing method of the fourth aspect.

[0035] The first oblique evaporation is performed using a preset pattern set to form the first superconducting layer corresponding to each window pattern in the preset pattern set on the substrate.

[0036] Oxidize the first superconducting layer to form a barrier layer on the surface of the first superconducting layer corresponding to each of the window patterns;

[0037] Based on the first direction, the first distance, the mask feature parameters, and the position of the first superconducting layer, the preset pattern set is subjected to a second oblique evaporation, so that the second superconducting layer formed on the substrate by each window pattern overlaps with the first superconducting barrier layer of the window pattern adjacent to it in the first direction in the preset pattern set.

[0038] According to some examples of this application, the second oblique evaporation of the preset pattern set based on a first direction, a first distance, mask feature parameters, and the position of the first superconducting layer includes:

[0039] Based on the first direction, the first distance, and the position of the first superconducting layer of each window pattern, the position of the second superconducting layer corresponding to each window pattern is determined, wherein the first superconducting layer and the second superconducting layer are separated by a first distance in the first direction;

[0040] The evaporation direction of the second oblique evaporation is determined based on the mask thickness, the position of the preset pattern set on the mask, and the position of the second superconducting layer corresponding to each window pattern.

[0041] The preset pattern set is subjected to a second oblique evaporation according to the evaporation direction of the second oblique evaporation.

[0042] Unlike existing technologies, the mask provided by this invention includes a set of preset patterns disposed on the upper layer. The set of preset patterns includes multiple window patterns; each window pattern is distributed in the same direction; the set of preset patterns, after being translated a first distance in the first direction, still resides within the region of the second photoresist layer, and the first direction is parallel to the plane containing the set of preset patterns; the width of each window pattern in the first direction is less than the first translation distance; the distance between each window pattern and its adjacent window pattern in the first direction is also less than the first translation distance. During the fabrication of the Josephson junction, by controlling the second oblique evaporation angle based on the first direction, the first distance, mask characteristic parameters, and the position of the first superconducting layer of each window pattern, the barrier layer of the first superconducting layer of each window pattern can overlap with the barrier layer of the first superconducting layer of the window pattern adjacent to it in the first direction within the set of preset patterns. Thus, an n-1 Josephson junction can be formed using only n window patterns in the set of preset patterns, greatly improving fabrication efficiency.

[0043] The mask manufacturing method and Josephson junction manufacturing method provided by this invention belong to the same inventive concept and have the same technical effects, and will not be described in detail here. Attached Figure Description

[0044] Figure 1 This is a schematic diagram of the exploded structure of a mask provided as an example of this application.

[0045] Figure 2 This is a top view of the second photoresist layer provided as an example of this application.

[0046] Figure 3 A flowchart illustrating a method for manufacturing a mask, as provided as an example in this application.

[0047] Figure 4 This is a schematic diagram of the exploded structure of a mask provided as another example of this application.

[0048] Figure 5 A flowchart illustrating a method for manufacturing a mask, as provided in another example of this application.

[0049] Figure 6 A flowchart illustrating a method for manufacturing a Josephson junction as an example provided in this application.

[0050] Figure 7 a to 7c are process diagrams illustrating a method for manufacturing a Josephson junction as provided in an example of this application. Detailed Implementation

[0051] The specific embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. The advantages and features of the present invention will become clearer from the following description and claims. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to facilitate and clarify the illustration of the embodiments of the present invention.

[0052] In the description of this invention, it should be understood that the terms "center", "upper", "lower", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0053] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0054] Please refer to Figure 1 An embodiment of the present invention provides a mask. The mask includes:

[0055] A first photoresist layer 110 is formed on a substrate, and the first photoresist layer 110 has a through window 111.

[0056] The second photoresist layer 120 is formed on the first photoresist layer 110. A preset pattern set connected to the window 111 is formed in the area of ​​the second photoresist layer 120. The preset pattern set includes multiple window patterns 121. Each window pattern 121 is distributed in the same direction.

[0057] The preset graphic set is still located within the area of ​​the second photoresist layer 120 after being translated a first distance in the first direction, and the first direction is parallel to the second photoresist layer 120; the width of each window graphic 121 in the first direction is less than the first distance; the distance between each window graphic 121 and the adjacent window graphic 121 in the first direction is less than the first distance.

[0058] Each window pattern 121 is distributed in the same direction, meaning all window patterns 121 are distributed along the same direction. The first direction can be any direction parallel to the second photoresist layer 120, and can be parallel or not parallel to the distribution direction of the window patterns 121. For a preset pattern set, there can be multiple first distances and first directions that satisfy the above conditions. In one embodiment of this application, the number of window patterns 121 is at least three.

[0059] Please refer to Figure 2 This is a top view of the second photoresist layer 120 of the mask in one embodiment of this application. The preset graphic set includes window graphics 121 that are rectangular graphics of different sizes with parallel but non-collinear sides.

[0060] It should be noted that this application does not limit whether the window graphics 121 are staggered in the distribution direction. The staggered distribution direction of the window graphics 121 means that after the window graphics 121 are translated along the distribution direction, there will be overlapping areas with other window graphics 121. This application does not limit the shape and size of each window graphics 121. Each window graphics 121 can be a rectangle with the same shape and size, or it can be a graphic with different shapes and sizes. This application does not limit the material, size, etc. of the first photoresist layer 110 and the second photoresist layer 120, and they can be selected according to actual needs.

[0061] Specifically, the width of window graphic 121 in the first direction is the maximum distance between a point of window graphic 121 and its corresponding point in the first direction. The distance between window graphic 121 and its adjacent window graphic 121 in the first direction is the maximum distance between window graphic 121 and its adjacent window graphic 121 in the first direction. When the width of each window graphic 121 in the first direction is less than the first distance, it can be ensured that after translating the window graphic 121 by the first distance in the first direction, it does not overlap with its own window graphic 121. When the distance between each window graphic 121 and its adjacent window graphic 121 in the first direction is less than the first distance, it can be ensured that after translating the window graphic 121 by the first distance in the first direction, it overlaps with its adjacent window graphic 121 in the first direction. When each window graphic 121 satisfies both of the above conditions, it can be ensured that after translating the window graphic 121 by the first distance in the first direction, it only overlaps with its adjacent window graphic 121 in the first direction.

[0062] Furthermore, the mask provided in this application embodiment is used to simultaneously form multiple Josephson junctions by performing oblique evaporation along the first oblique evaporation direction and the second oblique evaporation direction respectively. The mask includes a first photoresist layer 110 and a second photoresist layer 120 stacked together.

[0063] The first photoresist layer 110 is disposed on the substrate surface and forms a through window 111; the second photoresist layer 120 is formed on the first photoresist layer 110 and is provided with a preset pattern set that is through and connected to the window 111. The preset pattern set includes multiple window patterns 121; each window pattern 121 is distributed in the same direction; the second projection area of ​​each window pattern 121 defined on the substrate overlaps only with the first projection area of ​​the adjacent window pattern 121 defined on the substrate.

[0064] Because the width of each window pattern 121 in the first direction parallel to the second photoresist layer 120 in the mask provided in this application embodiment is less than the first distance; and the distance between each window pattern 121 and the adjacent window pattern 121 in the first direction is less than the first distance, when using this mask to manufacture Josephson junctions, it is possible to ensure that the second projection area of ​​each window pattern 121 on the substrate (the projection area on the substrate corresponding to the second oblique evaporation of each window pattern 121) only overlaps with the first projection area of ​​the adjacent window pattern 121 on the substrate (the projection area on the substrate corresponding to the first oblique evaporation of each window pattern 121). This allows each window pattern 121 to work together with the adjacent window pattern 121 to form a Josephson junction. Based on a mask containing n window patterns 121, n-1 Josephson junctions can be manufactured, which greatly improves the efficiency of manufacturing Josephson junctions and meets practical needs.

[0065] In one example of this application, when the first photoresist layer 110 is disposed on the substrate surface, the distance between corresponding points in the first projection area and the second projection area of ​​the window pattern 121 on the substrate surface is equal to the first distance, and the direction of the straight line where the corresponding point is located is parallel to the first direction.

[0066] Among them, the points corresponding to the first projection area and the second projection area of ​​the window pattern 121 on the surface of the substrate are the first projection points of the points on the window pattern 121 after the first oblique evaporation and the second projection points of the points on the substrate after the second oblique evaporation.

[0067] Because the width of each window pattern 121 in the preset pattern set located on the upper layer of the mask is less than the first distance in the first direction, and the distance between each window pattern 121 and its adjacent window pattern 121 in the first direction is also less than the first distance, during the Josephson junction fabrication process based on this mask, the angles of the first and second oblique evaporations can be controlled so that the distance between the lines connecting corresponding points in the first and second projection areas of the window pattern 121 on the substrate is equal to the first distance, and the direction of the connecting lines is parallel to the first direction. In this way, the second projection area of ​​each window pattern 121 on the substrate overlaps only with the first projection area of ​​the adjacent window pattern 121 on the substrate, and this overlapping area can form a Josephson junction. Based on a mask containing n window patterns 121, n-1 Josephson junctions can be fabricated, which greatly improves the efficiency of Josephson junction fabrication and meets practical needs.

[0068] Please refer to Figure 3 An embodiment of the present invention provides a method for manufacturing a mask, comprising:

[0069] Step S301: A first photoresist layer 110 and a second photoresist layer 120 are formed, wherein the first photoresist layer 110 is formed on the substrate.

[0070] Specifically, photoresist can be applied to a substrate using a spin coating process to form a first photoresist layer 110, and then photoresist can be applied onto the first photoresist layer 110 to form a second photoresist layer 120. Photoresist exhibits good performance in terms of film formation properties, imprinting properties (such as hardness and viscosity, curing speed, interface properties, etc.), and etching resistance.

[0071] In step S302, a set of pre-defined patterns is formed on the second photoresist layer 120. The set of pre-defined patterns includes multiple window patterns 121. Each window pattern 121 is distributed in the same direction. After the set of pre-defined patterns is translated a first distance in the first direction, it is still located in the area of ​​the second photoresist layer 120. The first direction is parallel to the second photoresist layer 120. The width of each window pattern 121 in the first direction is less than the first distance. The distance between each window pattern 121 and the adjacent window pattern 121 in the first direction is less than the first distance.

[0072] Specifically, the second photoresist layer 120 can be exposed using a photolithography plate and then developed to form a preset pattern set.

[0073] Step S303: A through window 111 is formed on the first photoresist layer 110 using a preset pattern set, so that the preset pattern set is located in the area corresponding to the window 111.

[0074] The preset pattern set exposes the first photoresist layer 110, and the preset pattern set can be used to develop the first photoresist layer 110 to form a window, and finally form the desired mask.

[0075] In one example of this application, step S302 above, forming a through-type preset pattern set on the second photoresist layer 120, includes:

[0076] A preset pattern set is exposed on the second photoresist layer 120;

[0077] The second photoresist layer 120 of the preset pattern set is removed by development to form a through preset pattern set.

[0078] The second photoresist layer 120 has photosensitive properties, and the area exposed to light will be developed.

[0079] Specifically, a photolithography plate and an exposure machine can be used to expose a preset pattern set on the second photoresist layer 120: the second photoresist layer 120 is developed, and the area that is illuminated, i.e. the area where the preset pattern set is located, dissolves in the developer, while the area that is not illuminated does not dissolve in the developer, thereby forming a preset pattern set that runs through the second photoresist layer 120.

[0080] In one example of this application, step S303 above, forming a through window 111 on the first photoresist layer 110 using a preset pattern set, includes:

[0081] The first photoresist layer 110 is developed using a preset pattern set to remove the unexposed first photoresist layer 110 until a through window 111 is formed.

[0082] The first photoresist layer 110 does not have photosensitive properties, and areas that are not exposed to light will be developed. Since the preset pattern set exposes the first photoresist layer 110, the first photoresist layer 110 comes into contact with the developer, and thus the first photoresist layer 110 gradually dissolves in the developer. By controlling the development area, a window is formed to expose the substrate, and the preset pattern set is located in the area corresponding to the window 111.

[0083] Please refer to Figure 4 An embodiment of the present invention provides a mask, comprising:

[0084] A first silicon layer 410 is formed on a substrate, and the first silicon layer 410 has a through first window 411.

[0085] A silicon dioxide layer 420 is formed on the first silicon layer 410, and the silicon dioxide layer 420 has a second window 421 that is through and communicates with the first window 411.

[0086] The second silicon layer 430 is formed on the silicon dioxide layer 420. A preset pattern set connected to the second window 421 is formed in the region of the second silicon layer 430 corresponding to the second window 421. The preset pattern set includes multiple window patterns 121. Each window pattern 121 is distributed in the same direction.

[0087] The preset graphic set is still located within the region of the second silicon layer 430 after being translated a first distance in the first direction, and the first direction is parallel to the second silicon layer 430; the width of each window graphic 121 in the first direction is less than the first distance; the distance between each window graphic 121 and the adjacent window graphic 121 in the first direction is less than the first distance.

[0088] Specifically, the mask provided in this application embodiment is used to simultaneously form multiple Josephson junctions by performing oblique evaporation along the first oblique evaporation direction and the second oblique evaporation direction respectively. The mask includes a first silicon layer 410, a silicon dioxide layer 420 and a second silicon layer 430 stacked together.

[0089] A first silicon layer 410 is formed on a substrate, and a through first window 411 is formed in the first silicon layer 410. A silicon dioxide layer 420 is formed on the first silicon layer 410, and a through second window 421 is formed in the silicon dioxide layer 420 and communicates with the first window 411. A second silicon layer 430 is formed on the silicon dioxide layer 420, and a set of preset patterns communicating with the second window 421 is formed in the region of the second silicon layer 430 corresponding to the second window 421. Each window pattern 121 is distributed in the same direction. The second projection area of ​​each window pattern 121 on the substrate overlaps only with the first projection area of ​​the adjacent window pattern 121 on the substrate.

[0090] Because the width of each window pattern 121 in the first direction parallel to the second photoresist layer 120 in the mask provided in this application embodiment is less than the first distance; and the distance between each window pattern 121 and the adjacent window pattern 121 in the first direction is less than the first distance, when using this mask to manufacture Josephson junctions, it is possible to ensure that the second projection area of ​​each window pattern 121 on the substrate (the projection area on the substrate corresponding to the second oblique evaporation of each window pattern 121) only overlaps with the first projection area of ​​the adjacent window pattern 121 on the substrate (the projection area on the substrate corresponding to the first oblique evaporation of each window pattern 121). This allows each window pattern 121 to work together with the adjacent window pattern 121 to form a Josephson junction. Based on a mask containing n window patterns 121, n-1 Josephson junctions can be manufactured, which greatly improves the efficiency of manufacturing Josephson junctions and meets practical needs.

[0091] In one example of this application, when the first silicon layer 410 is disposed on the surface of the substrate, the distance between corresponding points in the first projection area and the second projection area of ​​the window pattern 121 on the surface of the substrate is equal to the first distance, and the direction of the straight line where the corresponding point is located is parallel to the first direction.

[0092] Among them, the points corresponding to the first projection area and the second projection area of ​​the window pattern 121 on the surface of the substrate are the first projection points of the points on the window pattern 121 after the first oblique evaporation and the second projection points of the points on the substrate after the second oblique evaporation.

[0093] Because the width of each window pattern 121 in the preset pattern set located on the upper layer of the mask is less than the first distance in the first direction, and the distance between each window pattern 121 and the adjacent window pattern 121 in the first direction is less than the first distance, during the Josephson junction fabrication process based on this mask, the angles of the first and second oblique evaporation can be controlled so that the distance between the lines connecting corresponding points in the first and second projection areas of the window pattern 121 on the substrate is equal to the first distance, and the direction of the connecting lines is parallel to the first direction. This allows each window pattern 121 to overlap only with the adjacent window pattern 121 in the first projection area of ​​the substrate in the second projection area of ​​the substrate, and this overlapping area can form a Josephson junction.

[0094] Please refer to Figure 5 An embodiment of the present invention provides a method for manufacturing a mask, comprising:

[0095] In step S501, a first silicon layer 410, a silicon dioxide layer 420, and a second silicon layer 430 are sequentially formed, wherein the first silicon layer 410 is formed on the substrate.

[0096] The first silicon layer 410, silicon dioxide layer 420, and second silicon layer 430 can be stacked together using processes such as wafer bonding or epitaxial growth. In some applications, the thickness of the silicon dioxide layer 420 and the second silicon layer 430 is typically in the micrometer range, while the thickness of the first silicon layer 410 is in the hundreds of micrometer range.

[0097] Step S502: Etching is performed on the first silicon layer 410 and the second silicon layer 430 respectively to form a through first window 411 on the first silicon layer 410 and a through preset pattern set on the second silicon layer 430. The preset pattern set includes multiple window patterns 121. Each window pattern 121 is distributed in the same direction. The preset pattern set is still located in the area of ​​the second silicon layer 430 after being translated a first distance in the first direction. The first direction is parallel to the second silicon layer 430. The width of each window pattern 121 in the first direction is less than the first distance. The distance between each window pattern 121 and the adjacent window pattern 121 in the first direction is less than the first distance.

[0098] In one example of this application, an inorganic layer is used as a mask to etch the first silicon layer 410.

[0099] Specifically, an inorganic layer is deposited on the surface of the first silicon layer 410, and the inorganic layer is etched to complete the patterning. Then, deep silicon etching is performed on the first silicon layer 410 exposed by the inorganic layer to form a first window 411 penetrating the first silicon layer 410. The silicon dioxide layer 420 plays an etching stop role in this process. As a preferred embodiment, the inorganic layer includes stacked silicon dioxide thin films and silicon nitride thin films, with the silicon dioxide thin film formed on the first silicon layer 410.

[0100] In one example of this application, a photoresist layer is used as a mask to etch the second silicon layer 430.

[0101] Specifically, photoresist is coated on the surface of the second silicon layer 430, exposed and developed to complete the patterning, and then the exposed second silicon layer 430 is etched to form a set of preset patterns that run through the second silicon layer 430. The silicon dioxide layer 420 plays an etching cutoff role in this process. Finally, the photoresist is peeled off to complete the etching of the second silicon layer 430.

[0102] It should be noted that this application does not impose restrictions on the etching order of the first silicon layer 410 and the second silicon layer 430, and the order can be selected according to actual needs.

[0103] Step S503: The silicon dioxide layer 420 in the first window is removed by etching to form a second window that is connected to the first window, so that the preset graphic set is located in the area corresponding to the second window.

[0104] The silicon dioxide layer 420 can be removed by wet etching. When the first silicon layer 410 is etched using an inorganic layer as a mask, an inorganic layer remains on the surface of the first silicon layer 410 outside the first window. When wet etching is used, the inorganic layer remaining on the surface of the first silicon layer 410 can be removed at the same time.

[0105] Please refer to Figure 6 and Figure 7 From a to 7c, one embodiment of the present invention provides a method for manufacturing a Josephson junction. This is for the purpose of demonstrating the Josephson junction formation process. Figure 7 The masks shown in steps a through 7c only contain a second photoresist layer 120 (or a second silicon layer 430) with a preset pattern set, omitting intermediate structures. This Josephson junction fabrication method includes:

[0106] Step S601: The above-mentioned mask is disposed on the substrate 700, or a mask is formed on the substrate 700 according to the above-mentioned mask manufacturing method.

[0107] In step S602, the first oblique evaporation is performed using a preset pattern set to form a first superconducting layer 720 corresponding to each window pattern 121 in the preset pattern set on the substrate 700.

[0108] in, Figure 7 In section a, 710 represents the direction of the first oblique evaporation. The first oblique evaporation can be direct evaporation. It should be noted that this application does not limit the angle of the first oblique evaporation; it can be selected according to actual needs.

[0109] Step S603: Oxidize the first superconducting layer 720 to form a barrier layer on the surface of the first superconducting layer 720 corresponding to each window pattern 121.

[0110] Among them, such as Figure 7 As shown in b, the substrate 700 is placed in an oxidation cavity for oxidation, thereby forming a barrier layer on the surface of the first superconducting layer 720.

[0111] Step S604: Based on the first direction, the first distance, the mask feature parameters and the position of the first superconducting layer 720, a second oblique evaporation is performed on the preset pattern set so that the second superconducting layer 740 formed on the substrate 700 for each window pattern 121 overlaps with the barrier layer of the first superconducting layer 720 of the window pattern 121 adjacent in the first direction in the preset pattern set.

[0112] in, Figure 7 In section c, 730 represents the direction of the second oblique evaporation. Specifically, based on the first direction, the first distance, and the position of the first superconducting layer 720 of each window pattern 121, the position of the second superconducting layer 740 corresponding to each window pattern 121 is determined, with the first superconducting layer 720 and the second superconducting layer 740 being separated by the first distance in the first direction; based on the mask thickness, the position of the preset pattern set on the mask, and the position of the second superconducting layer 740 corresponding to each window pattern 121, the evaporation direction of the second oblique evaporation is determined; based on the evaporation direction of the second oblique evaporation, the preset pattern set undergoes a second oblique evaporation.

[0113] Since the width of each window pattern 121 in the mask is less than a first distance in the first direction parallel to the second photoresist layer 120, and the distance between each window pattern 121 and its adjacent window pattern 121 in the first direction is also less than the first distance, when using this mask to fabricate a Josephson junction, the direction of the second oblique evaporation can be controlled according to the position, first direction, and first distance of the first superconducting layer 720 so that the second superconducting layer 740 corresponding to each window pattern 121 and the first superconducting layer 720 are spaced apart by a first distance in the first direction. Based on this, it is possible to achieve that the second superconducting layer 740 of each window pattern 121 on the substrate 700 only overlaps with the first superconducting layer 720 of the adjacent window pattern 121 on the substrate 700, forming a Josephson junction in the overlapping area, which greatly improves the efficiency of Josephson junction fabrication.

[0114] In one embodiment of this application, a Josephson junction is provided, which is prepared by the Josephson junction manufacturing method described above.

[0115] In one embodiment of this application, a qubit is provided, comprising multiple Josephson junctions prepared by the aforementioned Josephson junction fabrication method. Based on this, the resistance values ​​of the multiple Josephson junctions can be measured to select those with resistance values ​​meeting the expected requirements for banding. When the Josephson junction used by the qubit fails, a Josephson junction with the same resistance as the failed junction can be activated to ensure the qubit functions normally. Furthermore, by connecting the prepared Josephson junctions in series or parallel, the resistance of the series or parallel connection can meet the expected requirements, thereby improving the reliability and utilization of the qubit.

[0116] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," or "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0117] The above are merely preferred embodiments of the present invention and do not constitute any limitation on the present invention. Any equivalent substitutions or modifications made by those skilled in the art to the technical solutions and content disclosed in the present invention without departing from the scope of the present invention shall be deemed to have remained within the protection scope of the present invention.

Claims

1. A mask, characterized in that, include: A first photoresist layer is formed on a substrate, and the first photoresist layer has a through window. A second photoresist layer is formed on the first photoresist layer. A preset set of patterns connected to the window is formed in the area of ​​the second photoresist layer corresponding to the window. The preset set of patterns includes multiple window patterns. Each window pattern is distributed in the same direction. The preset graphic set is still located within the area of ​​the second photoresist layer after being translated a first distance in the first direction, and the first direction is parallel to the second photoresist layer; the width of each window graphic in the first direction is less than the first distance; the distance between each window graphic and the adjacent window graphic in the first direction is less than the first distance.

2. The mask of claim 1, wherein, The width of the window graphic in the first direction is: The maximum distance between any two points in the window graphic located in the first direction.

3. The mask according to claim 1, characterized in that, When the first photoresist layer is disposed on the substrate surface, the distance between corresponding points of the first projection area and the second projection area of ​​the window pattern on the substrate surface is equal to the first distance, the direction of the straight line where the corresponding point is located is parallel to the first direction, the first projection area is the projection area of ​​the window pattern on the substrate surface along the first oblique evaporation angle, and the second projection area is the projection area of ​​the window pattern on the substrate surface along the second oblique evaporation angle.

4. A mask, characterized in that, include: A first silicon layer is formed on a substrate, and the first silicon layer has a through first window. A silicon dioxide layer is formed on the first silicon layer, and the silicon dioxide layer has a second window that is through and communicates with the first window; A second silicon layer is formed on the silicon dioxide layer. A preset set of graphics connected to the second window is formed in the region of the second silicon layer corresponding to the second window. The preset set of graphics includes multiple window graphics. Each window graphic is distributed in the same direction. The preset graphic set is still located within the region of the second silicon layer after being translated a first distance in the first direction, and the first direction is parallel to the second silicon layer; the width of each window graphic in the first direction is less than the first distance; the distance between each window graphic and the window graphic adjacent in the first direction is less than the first distance.

5. The mask according to claim 4, characterized in that, When the first silicon layer is disposed on the surface of the substrate, the distance between corresponding points of the first projection area and the second projection area of ​​the window pattern on the surface of the substrate is equal to the first distance, the direction of the straight line where the corresponding point is located is parallel to the first direction, the first projection area is the projection area of ​​the window pattern on the surface of the substrate along the first oblique evaporation angle, and the second projection area is the projection area of ​​the window pattern on the surface of the substrate along the second oblique evaporation angle.

6. A method for manufacturing a mask, characterized in that, include: A first photoresist layer and a second photoresist layer are formed in a stack, wherein the first photoresist layer is formed on a substrate; A set of pre-defined patterns is formed on the second photoresist layer. The set of pre-defined patterns includes multiple window patterns. Each window pattern is distributed in the same direction. The set of pre-defined patterns is still located within the region of the second photoresist layer after being translated a first distance in a first direction, and the first direction is parallel to the second photoresist layer. The width of each window pattern in the first direction is less than the first distance. The distance between each window pattern and the window pattern adjacent in the first direction is less than the first distance. A through window is formed on the first photoresist layer using the preset pattern set, such that the preset pattern set is located within the area corresponding to the window.

7. The method according to claim 6, characterized in that, The process of forming a set of pre-defined patterns that extend through the second photoresist layer includes: The preset pattern set is exposed on the second photoresist layer; The second photoresist layer of the preset pattern set is removed by development to form a through preset pattern set.

8. The method according to claim 6, characterized in that, The step of forming a through window on the first photoresist layer using the preset pattern set includes: The first photoresist layer is developed using the preset pattern set to remove the unexposed first photoresist layer until the through window is formed.

9. A method for manufacturing a mask, characterized in that, include: A first silicon layer, a silicon dioxide layer, and a second silicon layer are sequentially formed, wherein the first silicon layer is formed on a substrate; The first silicon layer and the second silicon layer are etched respectively to form a through-hole first window on the first silicon layer and a through-hole preset pattern set on the second silicon layer. The preset pattern set includes multiple window patterns. Each window pattern is distributed in the same direction. The preset pattern set is still located within the region of the second silicon layer after being translated a first distance in a first direction, and the first direction is parallel to the second silicon layer. The width of each window pattern in the first direction is less than the first distance. The distance between each window pattern and the window pattern adjacent in the first direction is less than the first distance. By etching away the silicon dioxide layer within the first window, a second window connected to the first window is formed, so that the preset graphic set is located within the area corresponding to the second window.

10. The manufacturing method according to claim 9, characterized in that, The second silicon layer is etched using a photoresist layer as a mask.

11. The manufacturing method according to claim 9, characterized in that, The first silicon layer is etched using an inorganic layer as a mask.

12. A method for manufacturing a Josephson knot, characterized in that, include: A mask according to any one of claims 1 to 3 or a mask according to any one of claims 4 to 5 is disposed on a substrate, or a mask is formed on the substrate by the manufacturing method according to any one of claims 6 to 8 or the manufacturing method according to any one of claims 9 to 11; The first oblique evaporation is performed using a preset pattern set to form the first superconducting layer corresponding to each window pattern in the preset pattern set on the substrate. Oxidize the first superconducting layer to form a barrier layer on the surface of the first superconducting layer corresponding to each of the window patterns; Based on the first direction, the first distance, the mask feature parameters, and the position of the first superconducting layer, the preset pattern set is subjected to a second oblique evaporation, so that the second superconducting layer formed on the substrate by each window pattern overlaps with the first superconducting barrier layer of the window pattern adjacent to it in the first direction in the preset pattern set.

13. The manufacturing method according to claim 12, characterized in that, The second oblique evaporation of the preset pattern set based on the first direction, first distance, mask feature parameters, and the position of the first superconducting layer includes: Based on the first direction, the first distance, and the position of the first superconducting layer of each window pattern, the position of the second superconducting layer corresponding to each window pattern is determined, wherein the first superconducting layer and the second superconducting layer are separated by a first distance in the first direction; The evaporation direction of the second oblique evaporation is determined based on the mask thickness, the position of the preset pattern set on the mask, and the position of the second superconducting layer corresponding to each window pattern. The preset pattern set is subjected to a second oblique evaporation according to the evaporation direction of the second oblique evaporation.

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