A method for realizing sound and pressure sensing based on a QLED optoelectronic synapse structure

Abstract

The application relates to a method for realizing sound and pressure sensing based on a QLED optoelectronic synapse structure, and can be applied to a method for sound signal detection and skin pressure sensing. The method provides a QLED optoelectronic synapse device structure combining sound sensing and pressure sensing. The application discloses a method for realizing sound and pressure sensing based on a QLED optoelectronic synapse device structure, which can be applied to sound signal detection and skin pressure sensing. The method changes the movement of carriers in a QLED optoelectronic presynapse device structure by converting an input pressure signal into the deformation degree of a piezoelectric film sensing layer and the electric signal formed by the conversion of the sensing layer, so that the presynapse device structure emits an optical signal with deformation information into a QLED optoelectronic postsynapse device structure, sound playing and pressure sensing can be realized through a filter and a signal amplifier structure. The application utilizes the light response characteristics of a QLED optoelectronic device to realize sound transmission and pressure sensing.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic device technology, and in particular to a method for realizing sound and pressure sensing based on QLED photoelectric synaptic structure. Background Technology

[0002] Humans can acquire information, express emotions, stimulate imagination, and create aesthetics from sound perception. In the age of artificial intelligence, sound perception allows AI to better understand human language and emotions, thereby improving its interaction and communication capabilities with humans. Speech recognition technology can convert human speech into text for natural language processing and analysis, enabling AI to better analyze and process audio signals, thus achieving various applications and functions. Alternatively, sound detection technology can monitor and analyze ambient sound in real time to detect different types of sound signals and determine the presence of anomalies or adverse events. This also allows AI to better simulate and generate audio content, enabling richer and more diverse creation and expression. However, currently, AI's rapid sound recognition and transmission are still based on electrical signal transmission, which imposes limitations to some extent. Furthermore, the foundation for developing brain-like functions for transmitting and outputting sound signals is still lacking.

[0003] Sound is a wave phenomenon produced by the vibration of objects. It propagates through a medium and can be perceived by the auditory organs of humans or animals. Sound contains a wealth of information; for example, pitch, intensity, and timbre can reflect certain characteristics of the sound source. If the sound source changes, the same sound will also change. Therefore, using sound to perceive the impact on human health in medical applications is a significant area of ​​research. For instance, sound can monitor physiological parameters such as heart rate, blood pressure, respiration, and blood oxygen saturation. These parameters can reflect the functional state of the cardiovascular, respiratory, and nervous systems, as well as the presence of abnormalities or diseases. Sound can also detect psychological states, such as emotions, feelings, attitudes, and personality. These states can reflect a person's mental, psychological, and social health status, as well as the presence of psychological problems such as stress, anxiety, and depression. Utilizing the structure of QLED optoelectronic devices for sound perception and transmission has significant research value in the medical field.

[0004] Skin pressure sensing refers to the skin's ability to perceive external physical stimuli such as pressure, vibration, and temperature. It is a crucial component of human touch. Utilizing pressure sensing enables artificial intelligence (AI) to perceive and interact with its environment and objects, enhancing its perception and adaptive capabilities. This allows AI to better adapt to complex and changing environments and perform more tasks. For example, remotely pressing tactile skin can control mechanical grippers to easily thread a needle as fine as a hair through its eye. Furthermore, it enhances the interaction and communication between AI and humans, enabling AI to better understand human needs and emotions and provide more friendly and natural services. Artificial tactile sensors with skin-like functions can flexibly apply pressure, simulating human social behaviors such as handshakes and hugs. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of existing technologies and provide a method for realizing sound and pressure sensing based on a QLED photoelectric synaptic structure. It provides a QLED photoelectric synaptic device structure that combines sound sensing and pressure sensing. By converting different external stimuli into piezoelectric deformation signals, including voltage, frequency, and waveform information, the output light signal of the anterior synaptic device is changed. The posterior synaptic photoelectric device receives the input of the output light signal of the anterior synaptic device and converts it into an electrical signal to realize the sensing of sound and pressure.

[0006] To achieve the above objectives, the technical solution of this invention is: a method for sound and pressure perception based on QLED photoelectric synaptic structures. Two QLED photoelectric synaptic structures are used as anterior synaptic devices and post-synaptic photoelectric devices, respectively. By converting different external stimuli into piezoelectric deformation signals, the output light signal of the anterior synaptic device is changed. The post-synaptic photoelectric device receives the output light signal of the anterior synaptic device and converts it into an electrical signal to achieve sound and pressure perception. The anterior synaptic device is the information acquisition end of the QLED photoelectric synaptic device, and the post-synaptic device is the information collection end of the QLED photoelectric synaptic device. The anterior synaptic device is similar in effect to the presynaptic membrane in a neural synapse, mainly used for signal output. In this invention, the anterior synaptic device functions to collect external stimulus signals, convert them into electrical signals, and send the signal containing the external stimulus to the post-synaptic device. The postsynaptic device is similar in effect to the postsynaptic membrane in a neural synapse. It is mainly used to receive signals triggered by the prosynapse. In this invention, the postsynaptic device receives the signals triggered by the prosynapse and compares the collected signals with the signals generated by the prosynapse to achieve information transmission in a neural synapse-like structure. This information transmission does not rely on a medium, but only on electro-optical conversion and photoelectric conversion to achieve light as the propagation carrier. It also has the transmission effect of encoding and decoding, which has great reference significance for realizing optical computing.

[0007] In one embodiment of the present invention, the piezoelectric deformation signal includes voltage, frequency, and waveform information.

[0008] In one embodiment of the present invention, the QLED photoelectric synapse structure is formed by sandwiching a quantum dot light-emitting layer between a hole transport layer and an electron transport layer. An organic material with high hole transport efficiency is used as the hole transport layer, which together with the electron transport layer and the quantum dot light-emitting layer forms a highly efficient PiN-type structure. The QLED photoelectric synapse structure includes, from bottom to top, a conductive substrate layer, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, a piezoelectric thin film sensing layer, an electron transport layer, and a cathode.

[0009] In one embodiment of the present invention, the conductive substrate layer is made of indium tin oxide (ITO) glass.

[0010] In one embodiment of the present invention, the hole injection layer is made of poly(3,4-ethylenedioxythiophene-polystyrene sulfonate) PEDOT:PSS or one or more of molybdenum oxide, nickel oxide, and cuprous thiocyanate.

[0011] In one embodiment of the present invention, the hole transport layer is any one or a combination of polymer TFB, Poly:TPD, and PVK.

[0012] In one embodiment of the present invention, the piezoelectric thin film sensing layer is a polarized piezoelectric polymer layer, and the material adopts any one or a combination of more than one of PBDB-T-2F, P3HT, PC71BM, PDINN, ZNO nanowires, P-type zinc oxide nanowires, Sb-doped P-type ZnO nanowires, TMCDS, polyvinylidene fluoride, iron polyacrylate, polyvinyl dithiol, polyethylene glycol terephthalate, polyphenylene acetylene and polyaniline, polyacetylene fluoride, and polycaprolactone.

[0013] In one embodiment of the present invention, the material of the electron transport layer is any one or a combination of more than one of ZnO, TiO2, SnO2, LiZnO, and MgZnO.

[0014] In one embodiment of the present invention, the cathode is made of any one or a combination of Au, Ag, and Al.

[0015] In one embodiment of the present invention, by converting external stimuli, i.e., pressure signals, into the degree of deformation of the piezoelectric thin film sensing layer and changing the movement of charge carriers in the presynaptic device through the electrical signal generated by the conversion of the piezoelectric thin film sensing layer, the presynaptic device emits light signals with deformation information to the postsynaptic photoelectric device. After passing through a filter and signal amplifier structure, the sound is played and the perception of pressure is established.

[0016] In one embodiment of the present invention, the method can be applied to a method for sound signal detection and skin pressure sensing, where sound and pressure are mechanical deformations, and sound and pressure perception are identified by the magnitude and frequency of the deformation, including the following steps:

[0017] 1) By fabricating a known piezoelectric thin film sensing layer into a QLED photoelectric synapse device, when the material is deformed by external force along its non-centrosymmetric direction, the centers of positive and negative charges of the material separate, generating positive and negative charges on the material surface in the stress direction, forming a potential difference. By adjusting the loudness signal of the input sound, the magnitude of the deformation of the material is achieved, which in turn adjusts the voltage signal of the input presynapse. Based on the characteristic that the output signal of the QLED photoelectric synapse device changes with the input voltage, by adjusting the input voltage of the QLED photoelectric synapse device, the light intensity of the light output by the QLED photoelectric presynapse device also changes, causing a change in the magnitude of the post-current value of the QLED photoelectric postsynapse device, corresponding to the change in the loudness of the sound, thereby realizing the transmission of loudness information in the sound transmission signal;

[0018] 2) By fabricating a known piezoelectric thin film sensing layer into a QLED photoelectric synapse device, when the material is deformed by external force along its non-centrosymmetric direction, the positive and negative charge centers of the material separate, generating positive and negative charges on the material surface in the stress direction, forming a potential difference. By adjusting the frequency signal of the input sound, the frequency of the material deformation is adjusted, and the pitch signal of the input sound is adjusted to regulate the voltage signal of the input synapse. Based on the characteristic that the frequency of the output signal of the QLED photoelectric synapse device changes with the frequency signal of the input voltage, by adjusting the frequency signal of the input voltage of the QLED photoelectric synapse device, the frequency of the light output by the QLED photoelectric synapse device will also change, causing a change in the frequency signal of the aftercurrent value of the QLED photoelectric back synapse device, corresponding to the change in the pitch of the sound, thereby realizing the transmission of pitch information in the sound transmission signal.

[0019] 3) By fabricating a known piezoelectric thin film sensing layer into a QLED photoelectric synapse device, when the material is deformed by external force along its non-centrosymmetric direction, the positive and negative charge centers of the material separate, generating positive and negative charges on the material surface in the stress direction, forming a potential difference. By adjusting the timbre signal of the input sound, the time-varying magnitude of the material deformation is reflected, thus generating the waveform signal of the voltage of the input synapse. Based on the characteristic that the waveform of the output signal of the QLED photoelectric synapse device changes with the input voltage signal, by adjusting the waveform signal of the input voltage of the QLED photoelectric synapse device, the time distribution of the light intensity output by the QLED photoelectric synapse device will also change, causing the waveform signal of the aftercurrent value of the QLED photoelectric aftersynapse device to change over time, corresponding to the change in the timbre of the sound, thereby realizing the transmission of timbre information in the sound transmission signal.

[0020] 4) By fabricating existing piezoelectric thin film sensing layer materials into QLED optoelectronic synaptic devices, and by adjusting the input pressure signal, since pressure will cause mechanical deformation of the material, when the material is deformed by external force along its non-centrosymmetric direction, the positive and negative charge centers of the material will separate, and positive and negative charges will be generated on the surface of the material in the stress direction, forming a potential difference. This will cause the temporal and spatial distribution of the light intensity output by the QLED optoelectronic front synaptic device to change accordingly, and cause the post-current value of the QLED optoelectronic rear synaptic device to change in time and space, corresponding to the changes caused by pressure, thereby realizing the transmission of pressure information and thus realizing the signal output with pressure information.

[0021] 5) By establishing formulas for the changes in current ΔI, voltage, and frequency of QLED photoelectric frontal contact devices carrying sound and QLED photoelectric frontal contact devices carrying sound and pressure signals, the curves are fitted using software to obtain an approximate conversion formula for pressure. Furthermore, the quality of sound transmission is judged by comparing the input and output sound signals.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] 1. The present invention provides a method for sound transmission and pressure sensing based on QLED photoelectric synaptic structure, which can be applied to sound signal detection and skin pressure sensing. It enables artificial intelligence to perceive sound and transmit sound information, and allows artificial intelligence to better analyze and process audio signals, thereby realizing various applications and functions.

[0024] 2. The present invention provides a method for sound transmission and pressure sensing based on QLED photoelectric synaptic structure, which can be applied to sound signal detection and skin pressure sensing. Utilizing sound sensing in medical procedures to detect human health is a very meaningful endeavor.

[0025] 3. The present invention provides a method for sound transmission and pressure sensing based on QLED photoelectric synaptic structure, which can be applied to sound signal detection and skin pressure sensing. By utilizing pressure sensing, artificial intelligence can perceive and interact with the environment and objects, improving the perception and adaptive capabilities of artificial intelligence, enabling it to better adapt to complex and changing environments and complete more tasks. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of the QLED photoelectric synapse device obtained in an embodiment of the present invention.

[0027] In the figure: 1-conductive substrate layer, 2-hole injection layer, 3-hole transport layer, 4-quantum dot light-emitting layer, 5-piezoelectric thin film sensing layer, 6-electron transport layer, 7-cathode. Detailed Implementation

[0028] The technical solution of the present invention will now be described in detail with reference to the accompanying drawings.

[0029] This invention provides a method for sound and pressure sensing based on QLED photoelectric synaptic structures. Two QLED photoelectric synaptic structures are used as a presynaptic device and a postsynaptic photoelectric device, respectively. Different external stimuli are converted into piezoelectric deformation signals, altering the output light signal of the presynaptic device. The postsynaptic photoelectric device receives the output light signal from the presynaptic device and converts it into an electrical signal to achieve sound and pressure sensing. The piezoelectric deformation signal includes voltage, frequency, and waveform information.

[0030] like Figure 1 As shown, the QLED photoelectric synapse structure is formed by sandwiching a quantum dot light-emitting layer between a hole transport layer and an electron transport layer. An organic material with high hole transport efficiency is used as the hole transport layer, which together with the electron transport layer and the quantum dot light-emitting layer forms a highly efficient PiN-type structure. The QLED photoelectric synapse structure includes, from bottom to top, a conductive substrate layer 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, a piezoelectric thin film sensing layer 5, an electron transport layer 6, and a cathode 7.

[0031] The conductive substrate layer is made of indium tin oxide (ITO) glass.

[0032] The hole injection layer is made of poly(3,4-ethylenedioxythiophene-polystyrene sulfonate) PEDOT:PSS or one or more of molybdenum oxide, nickel oxide, and cuprous thiocyanate.

[0033] The hole transport layer uses any one or a combination of polymer TFB, Poly:TPD, and PVK.

[0034] The piezoelectric thin film sensing layer is a polarized piezoelectric polymer layer, and the material adopts any one or more combinations of PBDB-T-2F, P3HT, PC71BM, PDINN, ZNO nanowires, P-type zinc oxide nanowires, Sb-doped P-type ZnO nanowires, TMCDS, polyvinylidene fluoride, polyferric polyacrylate, polyethylene dithiol, polyethylene glycol terephthalate, polyphenylene acetylene and polyaniline, polyacetylene fluoride, and polycaprolactone.

[0035] The electron transport layer is made of any one or a combination of more than one of ZnO, TiO2, SnO2, LiZnO, and MgZnO.

[0036] The cathode is made of any one or a combination of Au, Ag, and Al.

[0037] The method for fabricating the QLED photosynaptic structure of the present invention includes the following steps:

[0038] 1) Prepare the conductive substrate: Indium tin oxide (ITO) glass is used. The ITO glass is immersed in ethanol and ultrasonically cleaned for 20 minutes. The cleaned ITO glass is dried under a nitrogen gun and then irradiated under a UV ozone lamp for 20-25 minutes.

[0039] 2) Preparation of hole transport layer: It is made of poly(3,4-ethylenedioxythiophene-polystyrene sulfonate) (PEDOT:PSS) or one of molybdenum oxide, nickel oxide, cuprous thiocyanate and other materials, and spin-coated on ITO glass substrate.

[0040] 3) Preparation of hole injection layer: Any one or a combination of polymers TFB, Poly:TPD, and PVK is spin-coated onto the hole transport layer;

[0041] 4) Preparation of the light-emitting layer: Any one or a combination of CdS, CdSe, InP, CuInS, and PbSe is spin-coated onto the hole transport layer;

[0042] 5) Preparation of piezoelectric thin film sensing layer: any one or combination of PBDB-T-2F, P3HT, PC71BM, PDINN, ZNO nanowires, P-type zinc oxide nanowires, Sb-doped P-type ZnO nanowires, MoS2, polyvinylidene fluoride, iron polyacrylate, polyvinyl dithiol, polyethylene glycol terephthalate, polyphenylene acetylene and polyaniline, polyacetylene fluoride, and polycaprolactone is spin-coated onto the light-emitting layer;

[0043] 6) Preparation of electron transport layer: Any one or a combination of ZnO, TiO2, SnO2, LiZnO, and MgZnO is spin-coated onto the piezoelectric thin film sensing layer;

[0044] 7) Cathode preparation: Using any one of Au, Ag, and Al or a combination thereof, the cathode is deposited onto the electron transport layer by vapor deposition using a coating machine;

[0045] This invention applies the above-mentioned method for realizing sound and pressure sensing based on QLED photosynaptic structure, and the specific implementation is as follows:

[0046] 1) The voltage signal of the input prosthesis is adjusted by adjusting the loudness signal of the input sound to control the deformation of the material.

[0047] 2) The frequency of material deformation is achieved by adjusting the frequency signal of the input sound, and the pitch signal of the input sound is used to adjust the voltage signal of the input presynapse.

[0048] 3) By adjusting the timbre signal of the input sound, the waveform signal of the voltage of the presynapse is obtained by reflecting the change in the magnitude of the deformation of the material over time.

[0049] 4) Pressure causes mechanical deformation of materials. When a material is deformed by external force along its non-centrosymmetric direction, the centers of positive and negative charges of the material separate, and positive and negative charges are generated on the surface of the material in the direction of stress, forming a potential difference. This causes the temporal and spatial distribution of the light intensity output by the QLED optoelectronic front synapse device to change, which in turn causes the signal of the back current value of the QLED optoelectronic rear synapse device to change in time and space, corresponding to the changes caused by pressure. This enables the transmission of pressure information and thus the output of a signal with pressure information.

[0050] 5) By establishing formulas for the changes in current ΔI, voltage, and frequency of QLED photoelectric frontal contact devices carrying sound and QLED photoelectric frontal contact devices carrying sound and pressure signals, the curves are fitted using software to obtain an approximate conversion formula for pressure. Furthermore, the quality of sound transmission is judged by comparing the input and output sound signals.

[0051] The above are preferred embodiments of the present invention. Any changes made to the technical solution of the present invention that do not exceed the scope of the technical solution of the present invention shall fall within the protection scope of the present invention.

Claims

1. A method for realizing sound and pressure sensing based on QLED photosynaptic structure, characterized in that, Two QLED photoelectric synaptic structures are used as anterior and posterior synaptic devices, respectively. Different external stimuli are converted into piezoelectric deformation signals, which change the output light signal of the anterior synaptic device. The posterior synaptic device receives the output light signal of the anterior synaptic device and converts it into an electrical signal to realize the perception of sound and pressure. The piezoelectric deformation signal includes voltage, frequency, and waveform information. The QLED photoelectric synapse structure is constructed by sandwiching a quantum dot emitting layer between a hole transport layer and an electron transport layer. An organic material with high hole transport efficiency is used as the hole transport layer, which, together with the electron transport layer and the quantum dot emitting layer, forms a highly efficient PiN-type structure. The QLED photoelectric synapse structure includes, from bottom to top, a conductive substrate layer, a hole injection layer, a hole transport layer, a quantum dot emitting layer, a piezoelectric thin film sensing layer, an electron transport layer, and a cathode, stacked sequentially. By converting external stimuli, i.e., pressure signals, into the deformation degree of the piezoelectric thin film sensing layer and altering the movement of charge carriers in the presynaptic device through the converted electrical signal, the presynaptic device emits a light signal carrying deformation information to the postsynaptic photoelectric device. After passing through a filter and signal amplifier structure, sound playback and pressure perception are achieved.

2. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The conductive substrate layer is made of indium tin oxide (ITO) glass.

3. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The hole injection layer is made of poly(3,4-ethylenedioxythiophene-polystyrene sulfonate) PEDOT:PSS or one or more of molybdenum oxide, nickel oxide, and cuprous thiocyanate.

4. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The hole transport layer uses any one or a combination of polymer TFB, Poly:TPD, and PVK.

5. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The piezoelectric thin film sensing layer is a polarized piezoelectric polymer layer, and the material adopts any one or more combinations of PBDB-T-2F, P3HT, PC71BM, PDINN, ZNO nanowires, P-type zinc oxide nanowires, Sb-doped P-type ZnO nanowires, TMCDS, polyvinylidene fluoride, polyferric polyacrylate, polyethylene dithiol, polyethylene glycol terephthalate, polyphenylene acetylene and polyaniline, polyacetylene fluoride, and polycaprolactone.

6. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The electron transport layer is made of any one or a combination of more than one of ZnO, TiO2, SnO2, LiZnO, and MgZnO.

7. The method for realizing sound and pressure sensing based on QLED photosynaptic structure according to claim 1, characterized in that, The cathode is made of any one or a combination of Au, Ag, and Al.

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