A photovoltaic cell and photovoltaic module

Abstract

The application relates to a photovoltaic cell and a photovoltaic module. The photovoltaic cell comprises a substrate, a passivation layer on the substrate, a main grid and a secondary grid arranged on the surface of the substrate, and the main grid and the secondary grid are electrically connected, and the secondary grid is electrically connected with the substrate. The photovoltaic cell further comprises welding points arranged on the surface of the substrate, wherein the welding points comprise first welding points and second welding points, the first welding points are located at two ends of the main grid, and the second welding points are located between the first welding points. When the substrate is an N-type semiconductor, the width of the secondary grid is 20-40 microns, the number of the secondary grid is 80-100, and the width of the main grid is 20-45 microns. When the substrate is a P-type semiconductor, the width of the secondary grid is 20-45 microns, the number of the secondary grid is 100-150, and the width of the main grid is 40-60 microns. Through the design, the shielding of the substrate can be reduced, the photovoltaic cell is favorable for absorbing light, and the actual use requirement can be met.

Description

[0001] This application is a divisional application, the original application number is 202110998210.4, the original application date is August 27, 2021, and the entire contents of the original application are incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the technical field of solar energy, in particular to a photovoltaic cell and a photovoltaic module. BACKGROUND

[0003] With the development of technology, solar energy devices such as solar modules have become a regular clean energy supply device in the world. In general, a photovoltaic module is composed of a plurality of photovoltaic cell strings, wherein the photovoltaic cell strings are connected by a plurality of photovoltaic cells through a solder strip. The solder points play a role in electrical connection by being welded with the soldering points on the photovoltaic cells. However, the soldering points on the photovoltaic cells will block the surface of the photovoltaic cells, thereby affecting the absorption of light by the photovoltaic cells and further affecting the efficiency of the photovoltaic cells. SUMMARY

[0004] The present application provides a photovoltaic cell and a photovoltaic module.

[0005] The present application provides a photovoltaic cell, which comprises:

[0006] a substrate, and a passivation layer located on at least one surface of the substrate;

[0007] a main grid and a secondary grid arranged on the surface of the substrate in a crisscross manner, and the main grid and the secondary grid are electrically connected;

[0008] a soldering point arranged on the surface of the substrate, the soldering point comprising a first soldering point and a second soldering point, the first soldering point being located at both ends of the main grid, and the second soldering point being located between the first soldering points; the substrate is an N-type semiconductor, the width of the secondary grid is 20-40 microns, the number of the secondary grid is 80-100, and the width of the main grid is 20-45 microns, or;

[0009] the substrate is a P-type semiconductor, the width of the secondary grid is 20-45 microns, the number of the secondary grid is 100-150, and the width of the main grid is 40-60 microns.

[0010] In a possible implementation, the area of the first soldering point is 0.6-1.3 square millimeters, and the area of the second soldering point is 0.2-0.5 square millimeters.

[0011] In a possible implementation, the size of the main grid and / or the secondary grid along the thickness direction of the photovoltaic cell is less than or equal to 10 microns, and / or;

[0012] The first soldering point and / or the second soldering point has a size along the thickness direction of the photovoltaic cell less than or equal to 8 microns.

[0013] In a possible implementation, the shape of the first soldering point and / or the second soldering point comprises one or more combinations of a rectangle, a diamond, a circle, and an ellipse.

[0014] In a possible implementation, the length and width of the first soldering point are respectively between 0.3 mm and 1.1 mm.

[0015] In a possible implementation, the length and width of the second soldering point are respectively between 0.4 mm and 0.8 mm.

[0016] In a possible implementation, the second soldering point is in contact with the main grid and not in contact with the auxiliary grid.

[0017] In a possible implementation, the number of the main grids is 10-13.

[0018] In a possible implementation, the number of the main grids is 10-15.

[0019] In a possible implementation, the number of the soldering points of the half-cell is 4-6.

[0020] The application also provides a photovoltaic module, which comprises, from front to back, glass, first adhesive film material, photovoltaic cell string, second adhesive film material, and back plate, wherein the photovoltaic cell string is composed of a plurality of photovoltaic cells, and the photovoltaic cell is any one of the photovoltaic cells described above.

[0021] In a possible implementation, the photovoltaic cells are connected by solder wires, and the diameter of the solder wires is 0.25 mm to 0.32 mm.

[0022] In a possible implementation, the weight of the first adhesive film material and / or the second adhesive film material is 300 g / m2 to 500 g / m2.

[0023] The application relates to a photovoltaic cell and a photovoltaic assembly, the photovoltaic cell comprising a substrate, a passivation layer on the substrate, a main grid and a secondary grid arranged on the surface of the substrate and electrically connected, and the secondary grid is electrically connected with the substrate, wherein the photovoltaic cell further comprises a welding point arranged on the surface of the substrate, the welding point comprises a first welding point and a second welding point, the first welding point is located at the two ends of the main grid, and the second welding point is located between the first welding points. When the substrate is an N-type semiconductor, the width of the secondary grid is 20-40 microns, the number of the secondary grids is 80-100, and the width of the main grid is 20-45 microns. When the substrate is a P-type semiconductor, the width of the secondary grid is 20-45 microns, the number of the secondary grids is 100-150, and the width of the main grid is 40-60 microns. Through the design, the shielding of the substrate can be reduced, the photovoltaic cell can absorb light, and the actual use requirement can be met.

[0024] It should be understood that the foregoing general description and the following detailed description are only examples and cannot limit the application. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 A photovoltaic cell structure schematic diagram provided by an embodiment of the application;

[0026] Figure 2 For Figure 1 A local enlarged view of the I position in the middle;

[0027] Figure 3 A first welding point structure schematic diagram provided by an embodiment of the application;

[0028] Figure 4 A structure schematic diagram of one embodiment of the second welding point provided by an embodiment of the application;

[0029] Figure 5 A structure schematic diagram of another embodiment of the second welding point provided by an embodiment of the application;

[0030] Figure 6 A structure schematic diagram of still another embodiment of the second welding point provided by an embodiment of the application;

[0031] Figure 7 A comparison table of the embodiment and the prior art provided by an embodiment of the application;

[0032] Figure 8 A silver paste consumption and main grid number relationship schematic diagram provided by an embodiment of the application.

[0033] Reference signs:

[0034] 1-main grid;

[0035] 2-secondary grid;

[0036] 3 - weld point;

[0037] 31 - first weld point;

[0038] 32 - second weld point.

[0039] The accompanying drawings, which are incorporated herein and constitute part of this specification, illustrate embodiments consistent with the application and serve to explain the principles of the application. DETAILED DESCRIPTION

[0040] For a better understanding of the technical solutions of the present application, the embodiments of the present application are described in detail below with reference to the drawings.

[0041] It should be clear that the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0042] The terms used in the embodiments of the present application are only for the purpose of describing the specific embodiments, and are not intended to limit the present application. The singular forms "a", "an" and "the" used in the embodiments of the present application and the appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0043] It should be understood that the term "and / or" used herein is only to describe the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0044] It should be noted that the "up", "down", "left", "right" and other directional words described in the embodiments of the present application are described from the angle shown in the drawings, and should not be understood as limiting the embodiments of the present application. In addition, in the context, it should also be understood that when referring to an element connected to another element "on" or "under", it can not only be directly connected to another element "on" or "under", but also indirectly connected to another element "on" or "under" through an intermediate element.

[0045] With the development of technology, photovoltaic cells have become a common solar energy device, and photovoltaic cells can generally be divided into N-type photovoltaic cells and P-type photovoltaic cells. When energy is added to pure silicon (such as in the form of heat), it can cause several electrons to leave their covalent bonds and leave the atom. Each time an electron leaves, a hole is left behind. These electrons are then free to roam around the lattice, looking for another hole to call home. These electrons, known as free carriers, can carry an electric current. Mixing pure silicon with phosphorus atoms requires only a small amount of energy to cause one of the phosphorus atoms' "extra" electrons to escape, and when phosphorus atoms are used for doping, the resulting silicon is called N-type, and only part of the solar cell is N-type. The other part of the silicon is doped with boron, which has only three electrons in its outer shell instead of four, resulting in P-type silicon. There are no free electrons in P-type silicon. Diffusing phosphorus elements on a p-type semiconductor material forms a solar cell with a p / n structure, which is a P-type silicon wafer; diffusing boron elements on an N-type semiconductor material forms a solar cell with an n / p structure, which is an N-type silicon wafer.

[0046] The N-type photovoltaic cell includes an N-type silicon wafer and uses electron conduction, and the P-type photovoltaic cell includes a P-type silicon wafer and uses hole conduction. In general, both sides of the N-type photovoltaic cell are provided with silver paste. In one possible implementation, the N-type photovoltaic cell can be a TOPCon (Tunnel Oxide Passivated Contact) cell, the substrate of the TOPCon cell is an N-type semiconductor, and the back side of the substrate is sequentially provided with an ultra-wave tunneling oxide layer, an N-type polysilicon, a back passivation layer, and a metal electrode. The other side is provided with a boron-doped diffusion layer and a metal electrode.

[0047] One side of the P-type photovoltaic cell is provided with silver paste, and the other side is provided with aluminum paste and silver paste. In one possible implementation, the P-type photovoltaic cell can be a PERC (Passivated Emitter and Rear Cell) cell, the substrate of the PERC cell is a P-type semiconductor, and the front side of the substrate is provided with a passivation layer and a silver electrode, and the other side is provided with a passivation layer, an aluminum electrode, and a silver electrode.

[0048] The N-type photovoltaic cell has a long service life and high efficiency, and the P-type photovoltaic cell has a simple process and low cost.

[0049] For example, Figure 1 and Figure 2As shown, the application provides a photovoltaic cell, which comprises a substrate and a passivation layer on the surface of the substrate, and the photovoltaic cell needs a PN junction to realize the conversion of light energy to electric energy, the PN junction can be made by diffusion method to form a diffusion layer, and the passivation layer can increase the light conversion efficiency of the photovoltaic cell. The photovoltaic cell further comprises a main grid 1 and a secondary grid 2 which are arranged on the surface of the substrate and are electrically connected, and the secondary grid 2 is electrically connected with the substrate and is used to collect the current generated by the substrate, and the main grid 1 is used to collect the current of the secondary grid 2, wherein the number of the main grid 1 is 10-15, and specifically can be 10, 11, 12, 13, 14 or 15, and the photovoltaic cell further comprises a welding point 3 arranged on the surface of the substrate, the number of the welding point 3 is 4, 5 or 6, and the welding point 3 comprises a first welding point 31 and a second welding point 32, the first welding point 31 is located at both ends of the main grid 1, and the second welding point 32 is located between the first welding points 31, the area of the first welding point 31 is 0.6-1.3 square millimeters, and specifically can be 0.6 square millimeter, 0.7 square millimeter, 0.8 square millimeter, 0.9 square millimeter, 1.0 square millimeter, 1.1 square millimeter, 1.2 square millimeter or 1.3 square millimeter, and the area of the second welding point 32 is 0.2-0.5 square millimeter, and specifically can be 0.2 square millimeter, 0.25 square millimeter, 0.3 square millimeter, 0.35 square millimeter, 0.4 square millimeter, 0.45 square millimeter or 0.5 square millimeter.

[0050] The photovoltaic cell provided by the embodiment of the application can be applied to a cell sheet with a size ranging from 160 millimeters to 170 millimeters, for example, can be applied to commonly used cell sheets with a size of 161.75 millimeters, 163.75 millimeters, 166 millimeters and the like.

[0051] In the existing scheme, the number of the main grid 1 is usually 5-9, and in the embodiment provided by the application, the number of the main grid 1 is set to 10-15, by increasing the number of the main grid 1 and reducing the distance between the main grids 1, the area of the current transmission of a single main grid 1 is reduced, and thus the current passing through a single main grid 1 is reduced. In general, the internal loss of the photovoltaic cell is mainly the heat generated during work, according to the formula Q=I 2 Rt, wherein Q is the heat generated during work, that is, the main internal loss, I is the current, R is the resistance, and t is the working time. When the current in the circuit is reduced, the heat generated is reduced, that is, the internal loss is reduced, under the condition that the resistance is unchanged and the working time is constant, and thus the overall conversion efficiency of the photovoltaic cell is improved.

[0052] Generally, the conventional 160+ model battery piece is mostly a half piece, provided with 7 or more welding points, the number of welding points 3 of the half piece photovoltaic cell in the embodiment of the application is reduced to 4-6 compared with the existing scheme, and the area of the first welding point 31 is set to 0.6 square millimeter to 1.3 square millimeter, and the area of the second welding point 32 is 0.2 square millimeter to 0.5 square millimeter, the first welding point 31 can be arranged on the opposite sides of the main grid 1, and the second welding point 32 is located between the first welding points 31, since the first welding point 31 is located at the opposite ends of the main grid 1, the main grid 1 is usually a straight line, so when the first welding point 31 is successfully welded, the position of the main grid 1 and the solder strip is also relatively fixed.

[0053] Since the number of main grids 1 is increased in the embodiment provided by the application, the current collected by a single main grid 1 is reduced, so the width of each main grid 1 can be reduced, and the diameter of the welding wire can also be reduced, so that the number and area of the welding points 3 required are relatively reduced while ensuring the welding yield and the required welding tension, thereby reducing the consumption of silver paste and reducing the cost.

[0054] By adjusting the number and area of the welding points 3, the application embodiment can reduce the shielding of the substrate by the welding points 3, thereby reducing the influence of the welding points 3 on the absorption of light by the substrate, improving the working efficiency of the photovoltaic cell, and reducing the consumption of silver paste due to the reduction of the area of the welding points 3, thereby reducing the cost.

[0055] By setting the shape of the welding point 3 to be rectangular, diamond, circular, oval, etc., compared with the conventional square structure, these shapes can reduce the area of the welding point 3, such a design not only reduces the shielding of the substrate, but also reduces the consumption of silver paste and reduces the cost.

[0056] In one possible implementation, the width of the main grid 1 of the photovoltaic cell with an N-type semiconductor substrate is 20-45 microns, for example, 20 microns, 25 microns, 30 microns, 35 microns, 40 microns, 45 microns, etc.

[0057] In one possible implementation, the number of main grids 1 of the photovoltaic cell with a P-type semiconductor substrate is 10, 11, 12, 13, and the width of the main grid 1 is 40-60 microns, for example, 40 microns, 45 microns, 50 microns, 55 microns, 60 microns, etc.

[0058] By adjusting the width of the main grid 1 to increase the number of main grids 1, the shielding of the substrate by the main grid 1 can be reduced, thereby facilitating the absorption of light by the substrate and improving the working efficiency of the photovoltaic cell.

[0059] Although reducing the width of the main grid 1 will increase the resistance of a single main grid 1, the increased resistance has a small impact on heat generation compared to the reduction in current. Therefore, the overall heat generation of the photovoltaic cell is still reduced compared to the conventional solution.

[0060] In one possible implementation, the dimensions of the main grid 1 and / or the sub-grid 2 along the thickness direction of the photovoltaic cell are less than or equal to 10 micrometers, and / or the dimensions of the first welding point 31 and / or the second welding point 32 along the thickness direction of the photovoltaic cell are less than or equal to 8 micrometers.

[0061] Compared to existing solutions, the thickness of the main grid 1 and / or the sub-grid 2 is reduced, thereby reducing the volume of the main grid 1 and / or the sub-grid 2, and / or the dimensions of the first welding point 31 and the second welding point 32 along the thickness direction of the photovoltaic cell are reduced, thereby reducing the volume of the welding point 3. This can reduce the amount of silver paste raw materials and lower production costs.

[0062] like Figures 3 to 6 As shown, in one possible implementation, the shape of the first welding point 31 and / or the second welding point 32 includes one or more combinations of rectangle, rhombus, circle, and ellipse.

[0063] By setting the shape of the first welding point 31 and / or the second welding point 32, the area is reduced while ensuring the connection strength, the obstruction area is reduced, the work efficiency is improved, and the silver paste consumption is reduced, thus reducing the production cost.

[0064] In one possible implementation, the length and width of the first welding point 31 are between 0.3 mm and 1.1 mm, for example, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm, etc.

[0065] In one possible implementation, the length and width of the second welding point 32 are between 0.4 mm and 0.8 mm, for example, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, etc.

[0066] When the aforementioned length and width are applied to the elliptical welding point 3, the length range corresponds to the major axis range of the ellipse, and the width range corresponds to the width range of the ellipse.

[0067] This solution reduces the length and width of the first welding point 31 and the second welding point 32, reduces the area of ​​welding point 3 while maintaining sufficient connection strength, reduces the amount of silver paste used, lowers production costs, and reduces the shading area of ​​welding point 3, thereby improving the working efficiency of photovoltaic cells.

[0068] In a possible implementation, the second soldering point 32 is in contact with the main grid 1 and not in contact with the auxiliary grid 2. That is, the second soldering point 32 is not arranged at the connection position of the first soldering point 31 and the second soldering point 32.

[0069] Through such a design, the possibility of grid breakage at the connection position between the main grid 1 and the auxiliary grid 2 caused by soldering can be reduced, the normal use of the photovoltaic cell is affected, and the actual use demand is more met.

[0070] In a possible implementation, the width of the auxiliary grid 2 of the photovoltaic cell with an N-type semiconductor substrate is 20 microns to 40 microns, and the number of the auxiliary grid 2 is 80 to 100, for example, 80, 90, 100. The width of the main grid 1 can be consistent with that of the auxiliary grid 2.

[0071] In a possible implementation, the width of the auxiliary grid 2 of the photovoltaic cell with a P-type semiconductor substrate is 20 microns to 45 microns, and the number of the auxiliary grid 2 is 100 to 150, for example, 110, 120, 130, 140, 150, and the like.

[0072] In a possible implementation, in the P-type photovoltaic cell, the front surface can be provided with 109 to 123 auxiliary grids 2, and the back surface can be provided with 123 to 139 auxiliary grids 2. Since the front surface of the P-type photovoltaic cell is electrically conductive by silver, the cost of silver is relatively high, and therefore the number of the auxiliary grid 2 can be appropriately reduced. The back surface is electrically conductive by aluminum and a small amount of silver, and the cost of aluminum is relatively low, and therefore the number of the auxiliary grid 2 can be appropriately increased on the back surface to improve the working efficiency of the photovoltaic cell.

[0073] The scheme provided in the embodiments of the present application can reduce the shielding of the substrate by the auxiliary grid 2, thereby facilitating the absorption of light by the substrate and improving the working efficiency of the photovoltaic cell.

[0074] Compared with the existing conventional scheme, in the scheme provided in the present application, the width of the main grid 1 is narrower, the number of the main grid 1 is larger, the number of the soldering point 3 is smaller (the number of the soldering pad is smaller), and the area of the soldering point 3 is smaller, and therefore the consumption of silver paste can be reduced, and the cost can be reduced.

[0075] The present application provides a photovoltaic module, the photovoltaic module is in order from the front surface to the back surface: glass, first adhesive film material, photovoltaic cell string, second adhesive film material, back plate, wherein the photovoltaic cell string is composed of a plurality of photovoltaic cells, and the photovoltaic cell is any one of the photovoltaic cells described above.

[0076] The glass on the front surface of the photovoltaic cell has the functions of protection and light transmission, the first adhesive film material and the second adhesive film material are used for bonding and fixing the glass and the photovoltaic cell string, the photovoltaic cell string is used for converting light energy into electrical energy, and the back plate has the functions of sealing, insulation, and waterproofing.

[0077] In a possible implementation, the photovoltaic cells are connected by a solder wire, and the diameter of the solder wire is 0.25 mm to 0.32 mm, for example, 0.25 mm, 0.26 mm, 0.27 mm, 0.28 mm, 0.29 mm, 0.30 mm, 0.31 mm, 0.32 mm, or the like.

[0078] Compared with the prior art, the thinner solder wire reduces the shading area of the solder tape on the cell and improves the working efficiency of the cell.

[0079] In a possible implementation, the solder wire can be locally flattened to form a flat structure at a position corresponding to the soldering point 3, which facilitates the increase of the contact area between the solder wire and the soldering point 3 when the solder wire contacts the soldering point 3. In another possible implementation, the solder wire forms a flat structure at a position corresponding to the first soldering point 31, and the reason is that the first soldering point plays a major role in soldering.

[0080] In a possible implementation, the first adhesive film material and / or the second adhesive film material has a weight of 300 g / m2 to 500 g / m2.

[0081] Compared with the prior art, since the embodiments provided in the present application consume less silver paste, the solder wire is thinner, the reduction of the solder wire is lower, and the possibility of the solder wire piercing the adhesive film material is lower, the first adhesive film material and / or the second adhesive film material can be selected to have a lower weight, for example, EVA or POE, to reduce the production cost.

[0082] It should be noted that the data illustrated in the present application is only the preferred and commonly used data within the data range provided in the embodiments of the present application, and the remaining data is not listed, but the data within the data range provided in the present application can achieve the corresponding technical effects.

[0083] Through experiments, for example, Figure 7As shown in the table below, the embodiments represent the solutions provided in this application, specifically the technical effects achieved with the 163 battery, while the comparative examples represent existing conventional solutions. Based on Comparative Examples 1, 2, and Examples 1 to 5, it can be seen that when the number of main grids 1 increases, the number of sub-grids 2 can decrease. Furthermore, when the number of main grids 1 increases, the current collected by a single main grid 1 decreases, thus allowing for a reduction in the width of each main grid 1 and the diameter of the welding wire. Therefore, while ensuring welding yield and the required welding pull force, the number and area of ​​the required welding points 3 are relatively reduced, effectively lowering costs. Generally, a minimum welding pull force greater than 0.75N is sufficient to meet process requirements. As shown in the table, compared to Comparative Examples 1 and 2, Examples 1 to 5 reduce silver paste consumption and lower costs while still meeting welding pull force requirements, exhibiting smaller fluctuations in welding yield and meeting practical application needs. Simultaneously, the data in the table shows that compared to the comparative examples, the embodiments reduce costs while increasing battery efficiency and module efficiency, better meeting practical application needs.

[0084] According to Examples 2 to 4, when the number of main gate 1 and sub-gate 2 is constant, if the width of main gate 1 is smaller, the number of solder joints is less and the area is smaller, and less silver paste is consumed. At the same time, since the width of main gate 1 is reduced, the diameter of solder wire will also be relatively reduced, so less silver paste is consumed.

[0085] As shown in Examples 4 and 5, when the area of ​​the solder joint 3 is constant, even if the number of secondary gates 2 is reduced, the amount of silver paste consumed still increases due to the increase in the number of primary gates 1. Therefore, the number of primary gates 1 has a greater impact on the amount of silver paste consumed than the number of secondary gates 2.

[0086] In the solution provided in this application, the range of main busbar 1 is 10 to 15. When the number of main busbar 1 exceeds 15, according to Examples 1 to 5 and Comparative Example 3, it can be seen that in Comparative Example 3, the number of main busbar 1 increases, the width decreases, and the solder joint area decreases. At this time, although the number of sub-busbars 2 is reduced, the consumption of silver paste increases due to the excessive number of main busbar 1. Moreover, the welding pull force can no longer meet the process requirements, and the cell efficiency and module efficiency are significantly reduced compared to each embodiment. In actual use, the cost performance is low and does not meet the actual production and use requirements.

[0087] like Figure 8 As shown, with the increase of main busbar 1 and the decrease of sub-busbar 2, the curve of silver paste consumption is an inverse parabola. When the number of main busbar 1 exceeds 15, the decrease in silver paste caused by the reduction of sub-busbar 2 is less than the increase in silver paste caused by the increase of main busbar 1. Overall, the consumption of silver paste increases significantly, which not only increases the cost, but also reduces the welding yield, cell efficiency and module efficiency to a certain extent.

[0088] The above descriptions are only the preferred embodiments of the present application, and are not intended to limit the present application. The present application can have various modifications and changes for those skilled in the art. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A photovoltaic cell, characterized by, The photovoltaic cell comprises: a substrate, and a passivation layer on at least one surface of the substrate; a main grid (1) and a sub-grid (2) arranged on the surface of the substrate and intersecting each other, and the main grid (1) and the sub-grid (2) are electrically connected; a soldering point (3) arranged on the surface of the substrate, the soldering point (3) comprises a first soldering point (31) and a second soldering point (32), the first soldering point is located at both ends of the main grid (1), and the second soldering point (32) is located between the first soldering points (31); the substrate is an N-type semiconductor, the width of the sub-grid (2) is 20-40 microns, the number of the sub-grid (2) is 80-100, the width of the main grid (1) is 20-45 microns, or; the substrate is a P-type semiconductor, the width of the sub-grid (2) is 20-45 microns, the number of the sub-grid (2) is 100-150, and the width of the main grid (1) is 40-60 microns; the area of the first soldering point (31) is 0.6-1.3 square millimeters, and the area of the second soldering point (32) is 0.2-0.5 square millimeters.

2. The photovoltaic cell of claim 1, wherein, the size of the main grid (1) and / or the sub-grid (2) in the thickness direction of the photovoltaic cell is less than or equal to 10 microns, and / or; the size of the first soldering point (31) and / or the second soldering point (32) in the thickness direction of the photovoltaic cell is less than or equal to 8 microns.

3. The photovoltaic cell of claim 1, wherein, The shape of the first soldering point (31) and / or the second soldering point (32) comprises one or a combination of more than one of a rectangle, a diamond, a circle, and an ellipse.

4. The photovoltaic cell of claim 3, wherein, The length and width of the first soldering point (31) are respectively 0.3-1.1 millimeters.

5. The photovoltaic cell of claim 3, wherein, The length and width of the second soldering point (32) are respectively 0.4-0.8 millimeters.

6. Photovoltaic cell according to any of claims 1 to 5, characterized in that The second soldering point (32) is in contact with the main grid (1) and not in contact with the sub-grid (2).

7. The photovoltaic cell of claim 1, wherein, The number of the main grid (1) is 10-13.

8. The photovoltaic cell of claim 1, wherein, The number of the main grid (1) is 10-15.

9. The photovoltaic cell of claim 1, wherein, The number of the soldering point (3) of the half-cell is 4-6.

10. A photovoltaic module, characterized by, The photovoltaic assembly sequentially comprises, from the front to the back, a glass, a first adhesive film material, a photovoltaic cell string, a second adhesive film material, and a back plate, wherein the photovoltaic cell string is composed of a plurality of photovoltaic cells, and the photovoltaic cell is the photovoltaic cell according to any one of claims 1-9.

11. The photovoltaic module of claim 10, wherein, The photovoltaic cells are connected by a solder wire, and the diameter of the solder wire is 0.25-0.32 millimeters.

12. The photovoltaic module of claim 10, wherein, The weight of the first adhesive film material and / or the second adhesive film material is 300-500 grams per square meter.

Images