Display device

Abstract

The display device includes a substrate, a first insulating layer disposed on the substrate, a first assembly wire and a second assembly wire disposed on the substrate, a second insulating layer disposed on the first assembly wire and the second assembly wire, having a first hole and at least one or more second holes extending toward a side direction of the first hole, a semiconductor light emitting device disposed in the first hole, and a connection electrode disposed in the second hole.

Description

TECHNICAL FIELD

[0001] Embodiments relate to a display device. BACKGROUND

[0002] A display device uses a self-emitting device such as a light emitting diode (LED) as a light source of a pixel to display a high-quality image. An LED exhibits excellent durability in a harsh environment and enables long lifespan and high luminance, and thus is spotlighted as a light source of a new generation display device.

[0003] Recently, research is being conducted to manufacture a super-small LED using a material having a high-reliability inorganic crystal structure and to use the same as a new-generation light source by disposing the same to a panel (hereinafter, referred to as a "display panel") of a display device.

[0004] Such a display device has expanded to various forms such as a flexible display, a folderable display, a stretchable display, a rollable display, etc. beyond a flat panel display.

[0005] In order to achieve high resolution, the size of a pixel is gradually reduced, and thus research is actively being conducted to manufacture a super-small LED of a micron or nanometer level by aligning a plurality of LEDs to each pixel having a small size.

[0006] Generally, a display device includes more than several tens of millions of pixels. Thus, it is difficult to align at least one LED to each of more than several tens of millions of pixels having a small size, and thus various researches on a scheme of aligning a plurality of LEDs to a display panel are actively being conducted.

[0007] As the size of an LED is reduced, it is very important to rapidly and accurately transfer the LED onto a substrate. A transfer technology being recently developed includes a pick and place process, a laser lift-off method, a self-assembly method, etc. In particular, a self-assembly method using a magnetic body (or a magnet) to transfer an LED onto a substrate is recently spotlighted.

[0008] In the self-assembly method, a plurality of LEDs are put into a water tank containing a fluid, and the LEDs put into the fluid are moved to pixels of a substrate by moving the LEDs with a magnetic body, thereby aligning the LEDs with the respective pixels. Thus, the self-assembly method can rapidly and accurately transfer a plurality of LEDs onto a substrate, and thus is spotlighted as a new-generation transfer method.

[0009] Figure 1 is an example view showing a conventional display device.

[0010] As shown in Figure 1 , a first assembly wiring 2, a second assembly wiring 3, and an electrode wiring 4 are arranged on a substrate 1. In this case, after the light emitting device 8 is assembled to the assembly hole 7 of the partition wall 6 using the first assembly wiring 2 and the second assembly wiring 3, the electrode wiring 4 is electrically connected to the lower side of the light emitting device 8.

[0011] Recently, the interval between the first assembly wiring 2 and the second assembly wiring 3 is being reduced to achieve a high resolution display increasingly required. Therefore, there is no space margin for arranging the electrode wiring 4 between the first assembly wiring 2 and the second assembly wiring 3, so that the electrode wiring 4 cannot be arranged any more.

[0012] In order to solve such a problem, research into electrical connection at the side portion of the light emitting device 8 is being attempted.

[0013] Figure 2 is another example view showing a conventional display device.

[0014] As shown in Figure 2 , a first assembly wiring 2 and a second assembly wiring 3 are arranged on a substrate 1, and the light emitting device 8 is assembled to the assembly hole 7 of the partition wall 6 using the first assembly wiring 2 and the second assembly wiring 3.

[0015] Then, a metal film 9 is deposited on the partition wall 6, and is electrically connected on the side portion of the light emitting device 8 by etching the metal film 9.

[0016] However, as shown in Figure 2 , since the interval between the outer side surface of the light emitting device 8 and the inner side surface of the assembly hole 7 is too narrow, the metal film 9 deposited between the outer side surface of the light emitting device 8 and the inner side surface of the assembly hole 7 is difficult to be stably deposited, so that an electrical disconnection occurs. Such an electrical disconnection has a problem of causing a lighting failure.

[0017] In order to solve this problem, it is necessary to expand the assembly hole 7 to expand the interval between the outer side surface of the light emitting device 8 and the inner side surface of the assembly hole 7, but this has a problem of going against a high resolution. SUMMARY

[0018] PROBLEMS TO BE SOLVED BY THE INVENTION

[0019] An object of embodiments is to solve the foregoing problems and other problems.

[0020] Another object of embodiments is to provide a display device capable of preventing a lighting failure.

[0021] In addition, another object of the embodiments is to provide a display device that can improve reliability by enhancing adhesion.

[0022] In addition, another object of the embodiments is to provide a display device that can improve assembly rate.

[0023] Technical subjects of the embodiments are not limited to the technical subjects described in the summary of the invention, and include technical subjects that can be understood through the detailed description.

[0024] Technical solutions to the problems

[0025] To achieve the other object, according to one aspect of the embodiments, a display device includes a substrate, a first insulating layer disposed on the substrate, a first assembly wire and a second assembly wire disposed on the substrate, a second insulating layer disposed on the first assembly wire and the second assembly wire, having a first hole and at least one or more second holes extending toward a side direction of the first hole, a semiconductor light emitting device disposed in the first hole, and a connection electrode disposed in the second hole.

[0026] The second hole can include a 2-1 hole disposed on the first assembly wire, and a 2-2 hole disposed on the second assembly wire.

[0027] The connection electrode can include a first connection electrode disposed in the 2-1 hole, and a second connection electrode disposed in the 2-2 hole.

[0028] The connection electrode can include a third connection electrode disposed along a peripheral edge of the semiconductor light emitting device within the first hole.

[0029] The first connection electrode and the second connection electrode can each include a first connection region contacting a side portion of the semiconductor light emitting device, a second connection region extending from the first connection region and contacting a top surface of one of the first assembly wire and the second assembly wire, and a third connection region extending from the second connection region and contacting an inner side surface of the second hole.

[0030] The second hole can include two or more 2-1 holes disposed on the first assembly wire, and two or more 2-2 holes disposed on the second assembly wire.

[0031] Effects of the invention

[0032] As Figures 9 to 11As shown, in the embodiment, at least one or more second holes 362, 363 extending from the first hole 361 for assembling the semiconductor light emitting device 150 in the lateral direction are formed, and the connection electrodes 371, 372 are disposed in the holes, so that the connection electrodes 371, 372 do not cause electrical disconnection, and thus, can prevent the failure of lighting.

[0033] Referring to Figures 9 to 11 As shown, in the embodiment, the connection electrodes 371, 372, 373 are disposed in the first hole 361 and the second holes 362, 363, and are attached to the lateral surface of the semiconductor light emitting device 150, the top surface of the first assembly wire 321 and / or the second assembly wire 322 passing through the first insulating layer 330, and the inner lateral surface of the first hole 361 and the second holes 362, 363, so that the bonding force of the semiconductor light emitting device 150 is enhanced, and thus, the reliability can be improved.

[0034] As Figures 9 to 11 As shown, in the embodiment, since the thicker second insulating layer 340 is removed by forming the second holes 362, 363, the strength of the electric field in the second holes 362, 363 is enhanced without the second holes 362, 363, and thus, the dielectrophoretic force is increased, so that the semiconductor light emitting device 150 can be pulled by the stronger dielectrophoretic force, and thus, the assembly rate can be improved.

[0035] As Figures 9 to 11 As shown, in the embodiment, since the connection electrodes 371, 372, 373 are electrically connected along the periphery of the semiconductor light emitting device 150, even if the semiconductor light emitting device 150 is deviated to one side in the first hole 361, equal voltage is supplied, and thus, uniform brightness is ensured between the respective sub-pixels, and thus, the image quality can be improved.

[0036] As Figure 21 As shown, in the embodiment, by electrically connecting more connection electrodes to the semiconductor light emitting device 150, voltage can be more smoothly supplied, and thus, the brightness can be improved.

[0037] As Figure 21 As shown, in the embodiment, by the more connection electrodes, the semiconductor light emitting device 150 is more firmly bonded to the substrate 310, and thus, the bonding force can be further improved.

[0038] As Figure 21 As shown, in the embodiment, since the second holes 362 to 365 are formed at equal intervals from each other, when self-assembling, the semiconductor light emitting device 150 assembled in the first hole 361 can be aligned to the prescribed position without being deviated to one side.

[0039] As Figure 22 and Figure 23As shown, in the embodiment, in a case where the first group of assembly lines 321 and the second group of assembly lines 322 are arranged in different layers from each other, the lower side of the semiconductor light emitting device 150 is directly connected with the second group of assembly lines 322, and the side portion of the semiconductor light emitting device 150 is connected with the first group of assembly lines 321 and / or the second group of assembly lines 322 using the connection electrodes 371, 372, 373, so that the voltage can be supplied in a variety of paths, and then the luminance can be improved and the failure of lighting can be prevented.

[0040] Additional ranges applicable to the embodiments can become more apparent through the following detailed description. However, various changes and modifications can be clearly understood by those skilled in the art within the spirit and scope of the embodiments, and thus it should be understood that the detailed description and specific embodiments such as preferred embodiments are merely exemplary. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 is an example view illustrating an existing display device.

[0042] Figure 2 is another example view illustrating an existing display device.

[0043] Figure 3 shows a living room of a house in which a display device of the embodiment is installed.

[0044] Figure 4 is a block diagram schematically illustrating a display device of the embodiment.

[0045] Figure 5 is a circuit diagram illustrating an example of a pixel of Figure 4

[0046] Figure 6 is an enlarged view of a first panel area in the display device of Figure 3

[0047] Figure 7 is an enlarged view of an A2 area of Figure 6

[0048] Figure 8 is a view illustrating an example in which a light emitting device of the embodiment is assembled to a substrate by a self-assembly method.

[0049] Figure 9 is a plan view illustrating a display device of the first embodiment.

[0050] Figure 10 is a cross-sectional view taken along the A-B line of Figure 9

[0051] Figure 11 is a cross-sectional view taken along the C-D line of Figure 9 ​​​​​

[0052] Figure 12 is a sectional view showing a semiconductor light emitting device of an embodiment.

[0053] Figures 13 to 20 is a diagram for explaining a method of manufacturing a display device of an embodiment.

[0054] Figure 21 is a plan view showing a display device of a second embodiment.

[0055] Figure 22 is a plan view showing a display device of a third embodiment.

[0056] Figure 23 is a plan view showing a display device of a fourth embodiment.

[0057] The size, shape, numerical value, and the like of each of the constituent elements shown in the drawings can be different from the actual situation. In addition, even if the same constituent element is shown in different sizes, shapes, numerical values, and the like in each drawing, this is only one example in the drawings, and the same constituent element can have the same size, shape, numerical value, and the like in each drawing. DETAILED DESCRIPTION

[0058] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, and the same or similar constituent elements are given the same reference numerals regardless of the figure number, and repeated description thereof will be omitted. The suffixes "module" and "part" of the constituent elements used in the following description are assigned or mixed for the sake of consideration for easy writing of the specification, and they do not have meanings or roles distinguished from each other as such. Also, the drawings are to facilitate easy understanding of the embodiments disclosed in the present specification, and the technical idea disclosed in the present specification is not limited by the drawings. Also, when referring to an element such as a layer, a region, or a substrate existing "on" another element, it is understood that it can exist directly on the other element, or other intervening elements can exist therebetween.

[0059] The display device described in the present specification can include a TV, a sign, a mobile phone, a smart phone, a HUD (Head-Up Display) for a car, a backlight unit for a laptop computer, a display for VR or AR, and the like. However, the configuration of the embodiments described in the present specification can also be applied to a displayable device of a new product form developed in the future.

[0060] Hereinafter, a light emitting device of an embodiment and a display device including the same will be described.

[0061] Figure 3 A living room of a house in which a display device of an embodiment is installed is shown.

[0062] Referring to Figure 3 , the display device 100 of the embodiment can display the states of various electronic products such as a washing machine 101, a robot cleaner 102, an air purifier 103, etc., can communicate with the respective electronic products based on IOT, and can control the respective electronic products based on the user's setting data.

[0063] The display device 100 of the embodiment can include a flexible display manufactured on a thin and flexible substrate. The flexible display maintains the characteristics of the existing flat panel display and can be bent or rolled like paper.

[0064] In the flexible display, visual information can be implemented by independently controlling the light emission of unit pixels configured in a matrix form. The unit pixel refers to the smallest unit for implementing one color. The unit pixel of the flexible display can be implemented by a light emitting device. In the embodiment, the light emitting device can be a Micro-LED (micro-scale light emitting diode) or a Nano-LED (nano-scale light emitting diode), but is not limited thereto.

[0065] Figure 4 is a block diagram schematically illustrating a display device of the embodiment, Figure 5 is a circuit diagram illustrating an example of a pixel of Figure 4

[0066] Referring to Figure 4 and Figure 5 , the display device of the embodiment can include a display panel 10, a driving circuit 20, a scan driving part 30, and a power supply circuit 50.

[0067] The display device 100 of the embodiment can drive the light emitting device in an active matrix (AM) manner or a passive matrix (PM) manner.

[0068] The driving circuit 20 can include a data driving part 21 and a timing control part 22.

[0069] The display panel 10 can be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 can be formed in a circular or elliptical shape. At least one side of the display panel 10 can be formed to be curved with a prescribed curvature.

[0070] ​The display panel 10 can be divided into a display area DA and a non-display area NDA disposed at a periphery of the display area DA. The display area DA is an area in which a plurality of pixels PX are formed to display an image. The display panel 10 can include a plurality of data lines D1 to Dm (m is an integer of 2 or more), a plurality of scan lines S1 to Sn (n is an integer of 2 or more) crossing the plurality of data lines D1 to Dm, a high potential voltage line to which a high potential voltage is supplied, a low potential voltage line to which a low potential voltage is supplied, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scan lines S1 to Sn.

[0071] Each of the plurality of pixels PX can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 can emit first color light of a first primary wavelength, the second sub-pixel PX2 can emit second color light of a second primary wavelength, and the third sub-pixel PX3 can emit third color light of a third primary wavelength. The first color light can be red light, the second color light can be green light, and the third color light can be blue light, but is not limited thereto. In addition, Figure 4 Each of the plurality of pixels PX is illustrated as including three sub-pixels, but is not limited thereto. That is, each of the plurality of pixels PX can include four or more sub-pixels.

[0072] Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can be connected to at least one of the plurality of data lines D1 to Dm, at least one of the plurality of scan lines S1 to Sn, and the high potential voltage line. As Figure 5 The first sub-pixel PX1 can include a plurality of light emitting devices LD, a plurality of transistors for supplying a current to the plurality of light emitting devices LD, and at least one capacitor Cst, as

[0073] Although not illustrated, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can include only one light emitting device LD and at least one capacitor Cst.

[0074] Each of the plurality of light emitting devices LD can be a semiconductor light emitting diode including a first electrode, a plurality of conductive type semiconductor layers, and a second electrode. Here, the first electrode can be an anode electrode, and the second electrode can be a cathode electrode, but is not limited thereto.

[0075] The light emitting device LD can be one of a horizontal type light emitting device, a flip chip type light emitting device, and a vertical type light emitting device.

[0076] As Figure 5As illustrated, the plurality of transistors can include a drive transistor DT that supplies current to the plurality of light emitting devices LD, and a scan transistor ST that supplies a data voltage to a gate electrode of the drive transistor DT. The drive transistor DT can include a gate electrode connected to a source electrode of the scan transistor ST, a source electrode connected to a high potential voltage line to which a high potential voltage is applied, and a drain electrode connected to a plurality of first electrodes of the plurality of light emitting devices LD. The scan transistor ST can include a gate electrode connected to a scan line Sk (k is an integer satisfying 1 ≤ k ≤ n), a source electrode connected to the gate electrode of the drive transistor DT, and a drain electrode connected to a data line Dj (j is an integer satisfying 1 ≤ j ≤ m).

[0077] The capacitor Cst is formed between the gate electrode and the source electrode of the drive transistor DT. The storage capacitor Cst charges a difference between the gate voltage and the source voltage of the drive transistor DT.

[0078] The drive transistor DT and the scan transistor ST can be formed of a thin film transistor. In addition, in Figure 5 the present embodiment, it is described that the drive transistor DT and the scan transistor ST are formed of P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), but the present application is not limited thereto. The drive transistor DT and the scan transistor ST can also be formed of N-type MOSFETs. In this case, the positions of the source electrode and the drain electrode of each of the drive transistor DT and the scan transistor ST can be changed.

[0079] In addition, in Figure 5 the present embodiment, it is described that each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 includes 2T1C (2 Transistor-1 capacitor) having one drive transistor DT, one scan transistor ST, and one capacitor Cst, but the present application is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 can include a plurality of scan transistors ST and a plurality of capacitors Cst.

[0080] The second sub-pixel PX2 and the third sub-pixel PX3 can also be represented by substantially the same circuit diagram as the first sub-pixel PX1, and thus a detailed description thereof will be omitted.

[0081] The drive circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the drive circuit 20 can include a data driving part 21 and a timing control part 22.

[0082] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into a plurality of analog data voltages according to the source control signal DCS and supplies the plurality of analog data voltages to the plurality of data lines D1-Dm of the display panel 10.

[0083] The timing control part 22 receives the digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals can include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system can be an application processor of a smart phone or a Tablet PC, a system on chip of a display or a TV, etc.

[0084] The timing control part 22 generates a plurality of control signals for controlling the operation timing of the data driving part 21 and the scan driving part 30. The plurality of control signals can include a source control signal DCS for controlling the operation timing of the data driving part 21 and a scan control signal SCS for controlling the operation timing of the scan driving part 30.

[0085] The driving circuit 20 can be disposed in the non-display area NDA provided at one side of the display panel 10. The driving circuit 20 is formed of an integrated circuit (IC) and can be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, but the present application is not limited thereto. For example, the driving circuit 20 can be mounted on a circuit board (not shown) instead of the display panel 10.

[0086] The data driving part 21 can be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, and the timing control part 22 can be mounted on a circuit board.

[0087] The scan driving part 30 receives the scan control signal SCS from the timing control part 22. The scan driving part 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the plurality of scan signals to the plurality of scan lines S1-Sn of the display panel 10. The scan driving part 30 includes a plurality of transistors and can be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving part 30 can be formed of an integrated circuit, in which case, it can be mounted on a gate flexible film attached to the other side of the display panel 10.

[0088] The circuit board can be attached to the plurality of pads provided at one side edge of the display panel 10 using an anisotropic conductive film. Accordingly, a plurality of leads of the circuit board can be electrically connected with the plurality of pads. The circuit board can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board can be bent toward the lower portion of the display panel 10. Accordingly, one side of the circuit board can be attached to one side edge of the display panel 10, and the other side can be disposed at the lower portion of the display panel 10 and can be connected with a system board on which a host system is mounted.

[0089] The power supply circuit 50 can generate a plurality of voltages required for driving the display panel 10 from a main power applied from the system board and supply the same to the display panel 10. For example, the power supply circuit 50 can generate a high potential voltage VDD and a low potential voltage VSS for driving a plurality of light emitting devices LD of the display panel 10 from the main power and supply the same to a high potential voltage line and a low potential voltage line of the display panel 10. In addition, the power supply circuit 50 can generate and supply a driving voltage for driving the driving circuit 20 and the scan driving part 30 from the main power.

[0090] Figure 6 is an enlarged view of the first panel area in the display apparatus of Figure 3

[0091] Referring to Figure 6 In the display apparatus 100 of the embodiment, a plurality of panel areas such as the first panel area A1 can be manufactured by mechanically and electrically connecting by tiling.

[0092] The first panel area A1 can include a plurality of light emitting devices 150 disposed in a unit pixel (PX). Figure 4 The unit pixel PX can include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3, for example. For example, a plurality of red light emitting devices 150R can be disposed at the first sub-pixel PX1, a plurality of green light emitting devices 150G can be disposed at the second sub-pixel PX2, and a plurality of blue light emitting devices 150B can be disposed at the third sub-pixel PX3. The unit pixel PX can further include a fourth sub-pixel in which no light emitting device is disposed, but is not limited thereto.

[0093] is an enlarged view of the first panel area in the display apparatus of

[0094] Figure 7 is an enlarged view of the first panel area in the display apparatus of Figure 6 ​An enlarged view of the A2 region of FIG. 1.

[0095] Referring to Figure 7 The display device 100 of the embodiment can include a substrate 200, assembly wires 201, 202, an insulating layer 206, and a plurality of light emitting devices 150. More constituent elements can be included.

[0096] The assembly wires can include a first assembly wire 201 and a second assembly wire 202 spaced apart from each other. The first assembly wire 201 and the second assembly wire 202 can be configured to generate a dielectrophoretic force to assemble the light emitting device 150. For example, the light emitting device 150 can be one of a horizontal type light emitting device, a flip chip type light emitting device, and a vertical type light emitting device.

[0097] To implement each sub-pixel, the light emitting device 150 can include a red light emitting device 150R, a green light emitting device 150G, and a blue light emitting device 150B, but is not limited thereto, and a red phosphor and a green phosphor, etc. can be provided to implement red and green, respectively.

[0098] The substrate 200 can be a support member that supports the plurality of constituent elements disposed on the substrate 200, or can be a protection member that protects the plurality of constituent elements.

[0099] The substrate 200 can be a rigid substrate or a flexible substrate. The substrate 200 can be formed of glass or polyimide. In addition, the substrate 200 can include a material having flexibility such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), etc. In addition, the substrate 200 can be a transparent material, but is not limited thereto.

[0100] The insulating layer 206 can include a material having insulating properties and flexibility, such as polyimide, PEN, PET, etc., and can be integrally formed with the substrate 200 to form a single substrate.

[0101] The insulating layer 206 can be a conductive adhesive layer having adhesion and conductivity, and the conductive adhesive layer has flexibility, thereby enabling a flexible function of the display device. For example, the insulating layer 206 can be a conductive adhesive layer of an anisotropy conductive film (ACF) or an anisotropy conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer can be a layer having conductivity in the vertical direction of the thickness and having electrical insulation in the horizontal direction of the thickness.

[0102] The insulation layer 206 can include an assembly hole 203 for insertion of the light emitting device 150. Accordingly, upon self-assembly, the light emitting device 150 can be easily inserted into the assembly hole 203 of the insulation layer 206. The assembly hole 203 can be referred to as an insertion hole, a fixing hole, an alignment hole, or the like.

[0103] Figure 8 FIG. 1 is a diagram illustrating an example in which a light emitting device of an embodiment is assembled to a substrate in a self-assembly manner.

[0104] Referring to Figure 7 and Figure 8 , a self-assembly method of a light emitting device is described.

[0105] The substrate 200 can be a panel substrate of a display device. In the following description, a case in which the substrate 200 is a panel substrate of a display device is described, but embodiments are not limited thereto.

[0106] The substrate 200 can be formed of glass or polyimide. In addition, the substrate 200 can include a material having flexibility such as PEN (Polyethylene Naphthalate), PET (Polyethylene Terephthalate), or the like. In addition, the substrate 200 can be a transparent material, but is not limited thereto.

[0107] Referring to Figure 8 , the light emitting device 150 can be put into a chamber 1300 filled with a fluid 1200. The fluid 1200 can be water such as ultrapure water or the like, but is not limited thereto. The chamber can be referred to as a water tank, a vessel, a container, or the like.

[0108] Next, the substrate 200 can be disposed on the chamber 1300. According to an embodiment, the substrate 200 can also be put into the chamber 1300.

[0109] As shown in Figure 7 , the substrate 200 can be provided with a pair of assembly wires 201, 202 corresponding to each of the light emitting devices 150 to be assembled.

[0110] The assembly wires 201, 202 can be formed of a transparent electrode (ITO), or can include a metal material having excellent conductivity. For example, the assembly wires 201, 202 can be formed of at least any one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0111] The assembly wires 201 and 202 can form an electric field by a voltage supplied from the outside, and a dielectrophoretic force can be formed between the assembly wires 201 and 202 by the electric field. The assembly hole 203 can fix the light emitting device 150 on the substrate 200 by the dielectrophoretic force.

[0112] The interval between the assembly wires 201 and 202 can be formed to be smaller than the width of the light emitting device 150 and the width of the assembly hole 203, so that the assembly position of the light emitting device 150 using the electric field can be fixed more accurately.

[0113] The insulating layer 206 can be formed on the assembly wires 201 and 202, and the assembly wires 201 and 202 can be protected from the fluid 1200, and current leakage flowing through the assembly wires 201 and 202 can be prevented. The insulating layer 206 can be formed of an inorganic insulator such as silicon dioxide, aluminum oxide, or an organic insulator in a single layer or multiple layers.

[0114] In addition, the insulating layer 206 can include a material having insulating properties and flexibility, such as polyimide, PEN, PET, or the like, and can be formed as a single substrate by being integrally formed with the substrate 200.

[0115] The insulating layer 206 can be an insulating layer having adhesion or a conductive adhesion layer having conductivity. The insulating layer 206 has flexibility, so that a flexible function of the display device can be implemented.

[0116] The insulating layer 206 has a partition wall, and the assembly hole 203 can be formed by the partition wall. For example, by removing a portion of the insulating layer 206 when the substrate 200 is formed, each of the plurality of light emitting devices 150 can be assembled to the assembly hole 203 of the insulating layer 206.

[0117] The assembly hole 203 is formed in the substrate 200 to which the plurality of light emitting devices 150 are combined, and a surface on which the assembly hole 203 is formed can be in contact with the fluid 1200. The assembly hole 203 can guide an accurate assembly position of the light emitting device 150.

[0118] On the other hand, the assembly hole 203 can have a shape and a size corresponding to a shape of the light emitting device 150 assembled to a corresponding position. Thus, other light emitting devices or the plurality of light emitting devices can be prevented from being assembled to the assembly hole 203.

[0119] Referring again to Figure 8After the substrate 200 is configured, the assembling device 1100 including a magnetic body can move along the substrate 200. As the magnetic body, for example, a magnet or an electromagnet can be used. In order to maximize the area affected by the magnetic field within the fluid 1200, the assembling device 1100 can move in a state of contacting the substrate 200. According to an embodiment, the assembling device 1100 can include a plurality of magnetic bodies, or can also include a magnetic body having a size corresponding to the substrate 200. In this case, the moving distance of the assembling device 1100 can also be limited within a prescribed range.

[0120] The light emitting device 150 within the chamber 1300 can move toward the assembling device 1100 using the magnetic field generated by the assembling device 1100.

[0121] In the process of moving toward the assembling device 1100, the light emitting device 150 can enter the assembling hole 203 and contact the substrate 200.

[0122] At this time, by the electric field applied by the assembling wires 201, 202 formed in the substrate 200, the light emitting device 150 contacting the substrate 200 can be prevented from being detached due to the movement of the assembling device 1100.

[0123] That is, by the self-assembly method using the electromagnetic field as described above, the time required for each of the plurality of light emitting devices 150 to be assembled to the substrate 200 can be greatly shortened, and thus a large-area high-pixel display can be more rapidly and economically realized.

[0124] A prescribed solder layer (not shown) is also formed between the light emitting device 150 assembled on the assembling hole 203 of the substrate 200 and the substrate 200, and thus the bonding force of the light emitting device 150 can be improved.

[0125] After that, the light emitting device 150 is connected to an electrode wire (not shown) and can be applied with a power source.

[0126] Next, although not shown, at least one or more insulating layers can be formed through subsequent processes. The at least one or more insulating layers can be a transparent resin or a resin including a reflecting substance or a scattering substance.

[0127] On the other hand, in an embodiment, by configuring a connection electrode in at least one or more second holes extending from the first hole in which the semiconductor light emitting device is assembled, electrical disconnection can be prevented from occurring on the connection electrode, and thus lighting failure can be prevented.

[0128] Hereinafter, various embodiments capable of obtaining the above-described technical effects will be described.

[0129] [First Embodiment]

[0130] Figure 9is a plan view showing the display device of the first embodiment. Figure 10 is a cross-sectional view taken along Figure 9 the A-B line of FIG. 1. Figure 11 is a cross-sectional view taken along Figure 9 the C-D line of FIG. 1.

[0131] Referring to Figures 9 to 11 , the display device 300 of the first embodiment can include a substrate 310, a first insulating layer 330, a first assembly wiring 321, a second assembly wiring 322, a second insulating layer 340, a semiconductor light emitting device 150, and connection electrodes 371, 372, 373.

[0132] The substrate 310 can be a support member that supports a plurality of constituent elements disposed on the substrate 310, or can be a protection member that protects a plurality of constituent elements.

[0133] The first assembly wiring 321 and the second assembly wiring 322 can be disposed on the substrate 310. For example, the first assembly wiring 321 and the second assembly wiring 322 can be disposed on the same layer. For example, the first assembly wiring 321 and the second assembly wiring 322 can be in contact with the top surface of the substrate 310, but are not limited thereto. For example, the first assembly wiring 321 and the second assembly wiring 322 can be disposed on the same layer. For example, the first assembly wiring 321 and the second assembly wiring 322 can be disposed side by side with each other. The first assembly wiring 321 and the second assembly wiring 322 can function to assemble the semiconductor light emitting device 150 into the first hole 361 in a self-assembly manner. That is, in the self-assembly, the semiconductor light emitting device 150 moved by the assembly device 1100 of FIG. 1 can be assembled into the first hole 361 by the dielectrophoretic force formed by the electric field generated between the first assembly wiring 321 and the second assembly wiring 322 by the voltage supplied thereto. Figure 10

[0134] The first insulating layer 330 can be disposed on the substrate 310. For example, the first insulating layer 330 can be composed of an inorganic substance or an organic substance. For example, the first insulating layer 330 can be composed of a substance having a dielectric constant related to dielectrophoretic force.

[0135] The second insulating layer 340 can be disposed on the first assembly wiring 321 and the second assembly wiring 322. The second insulating layer 340 can have the first hole 361 for assembling the semiconductor light emitting device 150. For example, the second insulating layer 340 can be exposed within the first hole 361. For example, the bottom surface of the first hole 361 can be the top surface of the second insulating layer 340.

[0136] ​The thickness of the second insulating layer 340 can be determined in consideration of the thickness of the semiconductor light emitting device 150. For example, the thickness of the second insulating layer 340 can be less than the thickness of the semiconductor light emitting device 150. Accordingly, the upper side of the semiconductor light emitting device 150 can be located at a higher position than the top surface of the second insulating layer 340. That is, the upper side of the semiconductor light emitting device 150 can protrude in the upward direction from the top surface of the second insulating layer 340.

[0137] The size of the first hole 361 can be determined in consideration of a tolerance allowance for forming the first hole 361 and an allowance for easily assembling the semiconductor light emitting device 150 into the first hole 361, etc. For example, the size of the first hole 361 can be greater than the size of the semiconductor light emitting device 150. For example, when the semiconductor light emitting device 150 is assembled at the center of the first hole 361, the distance between the outer side surface of the semiconductor light emitting device 150 and the inner side surface of the first hole 361 can be 2 μm or less, but is not limited thereto.

[0138] For example, the first hole 361 can have a shape corresponding to the shape of the semiconductor light emitting device 150. For example, in the case where the semiconductor light emitting device 150 is circular, the first hole 361 can also be circular. For example, in the case where the semiconductor light emitting device 150 is rectangular, the first hole 361 can also be rectangular.

[0139] The second insulating layer 340 can have at least one or more second holes 362, 363 extending in the side direction of the first hole 361.

[0140] For example, the second holes can include a 2-1 hole 362 formed on the first assembly wire 321 and a 2-2 hole 363 formed on the second assembly wire 322. For example, the 2-1 hole 362 and the 2-2 hole 363 can be disposed in the Y direction. For example, the 2-1 hole 362 can be formed extending in the -Y direction from the first hole 361, and the 2-2 hole 363 can be formed extending in the +Y direction from the first hole 361.

[0141] On the other hand, the second holes 362, 363 can have a sufficient space for a metal film used to form the connection electrodes 371, 372, 373 to be continuously deposited without interruption. For example, the width W11 and the length L11 of the second holes 362, 363 can be the same, but are not limited thereto. For example, the width W11 can be 2 μm to 4 μm. For example, the length L11 can be 2 μm to 4 μm. In the case where the width W11 or the length L11 is less than 2 μm, the space of the second holes 362, 363 is narrow, and thus the metal film can be disconnected. In the case where the width W11 or the length L11 exceeds 4 μm, the space is large, and thus another semiconductor light emitting device can be attached to the second holes 362, 363 when self-assembly, resulting in assembly failure, causing waste of semiconductor light emitting devices and an increase in manufacturing unit price.

[0142] For example, the width W11 or the length L11 of the second hole 362, 363 can be smaller than the interval between the first assembly assembly line 321 and the second assembly assembly line 322. For example, the width W11 or the length L11 of the second hole 362, 363 can be 1 / 2 or less of the diameter of the semiconductor light emitting device 150. In the case where the width W11 or the length L11 of the second hole 362, 363 exceeds 1 / 2 of the diameter of the semiconductor light emitting device 150, the space of the second hole 362, 363 is large, and yet another semiconductor light emitting device can be attached to the second hole 362, 363 to cause assembly failure, resulting in waste of the semiconductor light emitting device, causing the manufacturing unit price to rise.

[0143] For example, the width W11 or the length L11 of the second hole 362, 363 can be greater than the interval L between the outer side surface of the semiconductor light emitting device 150 and the inner side surface of the first hole 361. Since the width W11 or the length L11 of the second hole 362, 363 is greater than the interval L between the outer side surface of the semiconductor light emitting device 150 and the inner side surface of the first hole 361, in the case where the metal film is deposited in the second hole 362, 363 to form the connection electrode 371, 372, 373, the connection electrode 371, 372, 373 does not form an electrical break, thereby being able to prevent failure to light.

[0144] According to an embodiment, since the thick second insulating layer 340 is removed by forming the second hole 362, 363, the strength of the electric field is enhanced in the second hole 362, 363 in the case where the second hole 362, 363 is not present, thereby the dielectrophoretic force is increased, so that the semiconductor light emitting device 150 can be pulled by a stronger dielectrophoretic force, thereby being able to improve the assembly rate.

[0145] On the other hand, the semiconductor light emitting device 150 can be disposed in the first hole 361.

[0146] The semiconductor light emitting device 150 can include a red semiconductor light emitting device generating red light, a green semiconductor light emitting device generating green light, and a blue semiconductor light emitting device generating blue light.

[0147] For example, in the self-assembly, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device dispersed in the same chamber (1300) are simultaneously moved by the same assembly device 1100, and can be assembled in the first hole 361 of each of the sub-pixels (PX1, PX2, PX3) corresponding to the sub-pixels. Figure 8 Figure 4 For example, in the self-assembly, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device dispersed in the same chamber (1300) are simultaneously moved by the same assembly device 1100, and can be assembled in the first hole 361 of each of the sub-pixels (PX1, PX2, PX3) corresponding to the sub-pixels. Figure 4 ​If the size of the first aperture 361 of each sub-pixel in PX1, PX2, and PX3 is the same, the red, green, and blue semiconductor light-emitting devices may be assembled into other first apertures 361 instead of the first aperture 361 to which they are to be assembled. To solve this problem, the red, green, and blue semiconductor light-emitting devices can each have different shapes, and the first aperture 361 can be formed to correspond to the different shapes of the red, green, and blue semiconductor light-emitting devices. Therefore, the red, green, and blue semiconductor light-emitting devices with different shapes are assembled into the first aperture 361 corresponding to their own shapes, thereby preventing poor assembly.

[0148] For example, the shape of a red semiconductor light-emitting device can be circular, the shape of a green semiconductor light-emitting device can be a first ellipse with a first minor axis and a first major axis, and the shape of a blue semiconductor light-emitting device can be a second ellipse with a second minor axis shorter than the first minor axis and a second major axis longer than the first major axis.

[0149] A semiconductor light-emitting device 150 can be disposed within a first aperture 361 and generate colored light. As described above, the semiconductor light-emitting device 150 may include a red semiconductor light-emitting device, a green semiconductor light-emitting device, and a blue semiconductor light-emitting device. For example, a red semiconductor light-emitting device may be disposed within a first sub-pixel ( Figure 4 In the first sub-pixel PX1, a green semiconductor light-emitting device can be disposed in the second sub-pixel PX2, and a blue semiconductor light-emitting device can be disposed in the third sub-pixel PX3. Therefore, a color image can be displayed by using red light emitted from the first sub-pixel PX1, green light emitted from the second sub-pixel PX2, and blue light emitted from the third sub-pixel PX3.

[0150] The semiconductor light-emitting device 150 in this embodiment can be a vertical semiconductor light-emitting device, but is not limited thereto. In such a case, after the semiconductor light-emitting device 150 is assembled into the first hole 361, the first electrode 154 of the semiconductor light-emitting device 150 can be electrically connected to the lower electrode wiring, and the second electrode 155 of the semiconductor light-emitting device 150 can be electrically connected to the electrode wiring 360. Here, the lower electrode wiring can be a second set of assembly lines 322, but is not limited thereto. If hot pressing is performed after the semiconductor light-emitting device 150 is assembled into the first hole 361, the adhesive layer of the first electrode 154 of the semiconductor light-emitting device 150 can be melted by heat, and the semiconductor light-emitting device 150 can be more firmly attached to the substrate 310 by pressing. The semiconductor light-emitting device 150 can be attached to the substrate 310 through the molten adhesive layer.

[0151] Figure 12 is a sectional view showing a semiconductor light emitting device of an embodiment.

[0152] Referring to Figure 12 The semiconductor light emitting device 150 of the embodiment can include light emitting parts 151, 152, 153, a first electrode 154, a second electrode 155, and a passivation layer 157. The semiconductor light emitting device 150 of the first embodiment can also include more constituent elements.

[0153] The light emitting parts 151, 152, 153 include a first conductive type semiconductor layer 151, an active layer 152, and a second conductive type semiconductor layer 153, but can include more constituent elements.

[0154] The first conductive type semiconductor layer 151, the active layer 152, and the second conductive type semiconductor layer 153 can be grown in sequence on a wafer (not shown) using a deposition apparatus such as MOCVD. Thereafter, an etching process can be performed to etch in the vertical direction in the order of the second conductive type semiconductor layer 153, the active layer 152, and the first conductive type semiconductor layer 151. Thereafter, the semiconductor light emitting device 150 can be manufactured by forming the passivation layer 157 along the remaining area of the side surface of the first conductive type semiconductor layer 151 except for a part of the side surface of the first conductive type semiconductor layer 151, the side surface of the active layer 152, and the side surface periphery of the second conductive type semiconductor layer 153.

[0155] The first conductive type semiconductor layer 151 can include a first conductive type dopant, and the second conductive type semiconductor layer 153 can include a second conductive type dopant. For example, the first conductive type dopant can be an n-type dopant such as silicon (Si), and the second conductive type dopant can be a p-type dopant such as boron (B).

[0156] For example, the first conductive type semiconductor layer 151 can generate electrons, and the second conductive type semiconductor layer 153 can form holes. The active layer 152 generates light, which can be referred to as a light emitting layer.

[0157] In the case where the semiconductor light emitting device 150 of the embodiment is formed in a mesa etching manner, the diameter of the semiconductor light emitting device 150 can gradually increase as it approaches from the upper side to the lower side.

[0158] The first electrode 154 can be disposed on the lower side of the first conductive type semiconductor layer 151. The first electrode 154 can include at least one or more layers. For example, the first electrode 154 can include a bonding layer for bonding the semiconductor light emitting device 150 to the substrate 310 and a bonding layer for bonding the bonding layer to the lower side of the light emitting part 151, 152, 153, for example, the first conductive type semiconductor layer 151. For example, the bonding layer can be composed of indium (In), tin (Sn), or the like. For example, the bonding layer 154_2 can be composed of titanium (Ti), chromium (Cr), or the like.

[0159] The second electrode 155 can be disposed on the second conductive type semiconductor layer 153. The second electrode 155 can include at least one or more layers. The second electrode 155 can include a transparent conductive layer and a magnetic layer. The transparent conductive layer can be composed of a transparent conductive material, for example, ITO. The transparent conductive layer can obtain a current spreading effect so that the current generated by the voltage supplied from the electrode wiring 360 is uniformly spread to the entire area of the second conductive type semiconductor layer 153. That is, by the transparent conductive layer, the current is uniformly spread to the entire area of the second conductive type semiconductor layer 153, thereby generating holes in the entire area of the second conductive type semiconductor layer 153, and thus by increasing the amount of hole generation, the amount of light generated by the recombination of holes and electrons in the active layer 152 is increased, and light efficiency can be improved. The increase in light efficiency can improve the brightness.

[0160] The magnetic layer can include nickel (Ni), cobalt (Co), iron (Fe), or the like. The magnetic layer can include SmCo (samarium-cobalt), Gd (gadolinium)-based, La (lanthanum)-based, Mn (manganese)-based metals. At the time of self-assembly, the magnetic layer is magnetized by a magnetic body provided in an assembly device (1100), and functions to form an attractive force with the magnetic body. Accordingly, the semiconductor light emitting device 150 can move identically as the magnetic body moves.

[0161] In order not to hinder the travel of light of the semiconductor light emitting device 150, the magnetic layer can be formed to be very thin in the order of nanometers (nm) and be light-transmissive.

[0162] At the time of magnetic assembly, by making the semiconductor light emitting device 150 move faster and more quickly as the magnetic body moves, the process time can be shortened and the assembly yield can be improved.

[0163] The passivation layer 157 can protect the light emitting part 151, 152, 153. For example, the passivation layer 157 can surround the light emitting part 151, 152, 153. For example, the passivation layer 157 can surround the second electrode 155. For example, the passivation layer 157 can be disposed along the side portion periphery of the light emitting part 151, 152, 153, and can be disposed on the second electrode 155.

[0164] The passivation layer 157 can prevent the semiconductor light emitting device 150 from being flipped over when self-assembled, and can cause the lower side of the semiconductor light emitting device 150, i.e., the bottom surface of the first conductive type semiconductor layer 151, to face the top surface of the first insulating layer 330. That is, the passivation layer 157 of the semiconductor light emitting device 150 can be located away from the first assembly wire 321 and the second assembly wire 322 when self-assembled. Since the passivation layer 157 is not disposed on the lower side of the semiconductor light emitting device 150, the lower side of the semiconductor light emitting device 150 can be located close to the first assembly wire 321 and the second assembly wire 322. Thus, when self-assembled, the lower side of the semiconductor light emitting device 150 is disposed to face the first insulating layer 330, and the upper side of the semiconductor light emitting device 150 is disposed to face the upper portion, thereby preventing the semiconductor light emitting device 150 from being flipped over and misaligned.

[0165] On the other hand, the passivation layer 157 is disposed around a portion of the side of the light emitting part 151, 152, 153, i.e., the first side 158a, but is not disposed around another portion of the side of the light emitting part 151, 152, 153, i.e., the second side 158b. For example, the first side 158a of the light emitting part 151, 152, 153 can be a portion of the side of the first conductive type semiconductor layer 151, the side of the active layer 152, and the side of the second conductive type semiconductor layer 153, and the second side 158b of the light emitting part 151, 152, 153 can be another portion of the side of the first conductive type semiconductor layer 151.

[0166] For example, since the passivation layer 157 is not disposed on the second side 158b of the light emitting part 151, 152, 153, it can be exposed to the outside. The side of the first electrode 154 disposed below the light emitting part 151, 152, 153 can also be exposed to the outside. The connection electrodes 371, 372, 373 of the embodiment can be electrically connected to the second side 158b of the light emitting part 151, 152, 153 and / or the side of the first electrode 154.

[0167] The connection electrodes 371, 372 can be disposed in the second holes 362, 363 of the second insulating layer 340. The connection electrodes 371, 372 can be electrically connected to the side of the semiconductor light emitting device 150 at the second holes 362, 363 of the second insulating layer 340. For example, a first side of the connection electrodes 371, 372 can pass through the first insulating layer 330 to be electrically connected to the first assembly wire 321 and / or the second assembly wire 322, and a second side of the connection electrodes 371, 372 can be electrically connected to the side of the semiconductor light emitting device 150.

[0168] In addition, the connection electrode 373 can be disposed in the first hole 361 of the second insulating layer 340. The connection electrode 373 can be electrically connected to the side portion of the semiconductor light emitting device 150 at the first hole 361 of the second insulating layer 340. For example, a first side of the connection electrode 373 can be electrically connected to the first assembly wire 321 and / or the second assembly wire 322 through the first insulating layer 330, and a second side of the connection electrode 373 can be electrically connected to the side portion of the semiconductor light emitting device 150.

[0169] For example, the connection electrodes 371, 372, 373 can be composed of at least one or more layers having excellent electrical conductivity. For example, the connection electrodes 371, 372, 373 can include a first layer including molybdenum (Mo), a second layer including aluminum (Al), and a third layer including molybdenum (Mo).

[0170] For example, the connection electrodes 371, 372, 373 can have a thickness of 300 nm to 800 nm. In the case where the connection electrodes 371, 372, 373 are less than 300 nm, a phenomenon in which deposition is not uniformly deposited and is disconnected can occur. In the case where the connection electrodes 371, 372, 373 exceed 800 nm, a deposition time for forming a corresponding thickness can be too long.

[0171] In the related art, since a gap L between an inner side surface of the first hole 361 and an outer side surface of the semiconductor light emitting device 150 is very narrow, and a metal film for forming the connection electrode 373 is deposited on a region having such a narrow gap L, a phenomenon in which the metal film is discontinuously formed and is disconnected can occur. Even if the metal film is patterned to form the connection electrode 373, an electrical disconnection can occur at a corresponding disconnected portion, and thus a lighting failure can occur.

[0172] However, according to an embodiment, by extending the second holes 362, 363 from the first hole 361 of the second insulating layer 340 on which the semiconductor light emitting device 150 is assembled, in a side direction, and disposing the connection electrodes 371, 372 in the second holes 362, 363, the connection electrodes 371, 372 can be electrically connected to the side portion of the semiconductor light emitting device 150 without disconnection, and thus a lighting failure can be prevented.

[0173] That is, the second holes 362, 363 extending from the first hole 361 can be empty spaces in which the semiconductor light emitting device 150 is not disposed. Accordingly, in a case in which a metal film is deposited onto the second insulating layer 340 and the semiconductor light emitting device 150 after the semiconductor light emitting device 150 is assembled in the first hole 361, since a gap L between the inner side surface of the second hole 362, 363 and the outer side surface of the semiconductor light emitting device 150 disposed in the first hole 361 is increased by at least an amount corresponding to the extension length L11 of the second hole 362, 363, the metal film deposited on the area between the inner side surface of the second hole 362, 363 and the outer side surface of the semiconductor light emitting device 150 disposed in the first hole 361 can be continuously formed without interruption. Accordingly, in a case in which the respective metal films are patterned to form the connection electrodes 371, 372, the connection electrodes 371, 372 are electrically connected to the side portions of the semiconductor light emitting device 150 without electrical disconnection, thereby enabling prevention of non-lighting.

[0174] On the other hand, the connection electrodes can include a first connection electrode 371 disposed in the 2-1 hole 362 and a second connection electrode 372 disposed in the 2-2 hole 363.

[0175] For example, the first connection electrode 371 can be electrically connected to the first side portion 158a of the semiconductor light emitting device 150 through the first hole 361 at the 2-1 hole 362. For example, the second connection electrode 372 can be electrically connected to the second side portion 158b of the semiconductor light emitting device 150 through the first hole 361 at the 2-2 hole 363.

[0176] In an embodiment, the side portions of the semiconductor light emitting device 150 are electrically connected to both of the connection electrodes, i.e., the first connection electrode 371 and the second connection electrode 372, but only one of the first connection electrode 371 and the second connection electrode 372 can be connected to the side portions of the semiconductor light emitting device 150, and the other connection electrode can be omitted.

[0177] The first connection electrode 371 and the second connection electrode 372 can each include a first connection region 371_1, 372_1 which is in contact with the side portion of the semiconductor light emitting device 150, a second connection region 371_2, 372_2 which extends from the first connection region 371_1, 372_1 and is in contact with the top surface of one of the first assembly wire 321 and the second assembly wire 322, and a third connection region 371_3, 372_3 which extends from the second connection region 371_2, 372_2 and is in contact with the inner side surface of the second hole 362, 363.

[0178] The upper side of the first connection area 371_1, 372_1 can be in contact with the passivation layer 157 of the semiconductor light emitting device 150, and the lower side of the first connection area 371_1, 372_1 can be in contact with the side surface of the first conductive type semiconductor layer 151 and / or the side surface of the first electrode 154 of the semiconductor light emitting device 150.

[0179] The first connection area 371_1, 372_1 and the third connection area 371_3, 372_3 can have the same height, but are not limited thereto.

[0180] On the other hand, the connection electrode can include a third connection electrode 373 disposed along the circumference of the semiconductor light emitting device 150 within the first hole 361. For example, the third connection electrode 373 can be disposed between the inner side surface of the first hole 361 and the outer side surface of the semiconductor light emitting device 150.

[0181] For example, the first side of the third connection electrode 373 of the first hole 361 can be connected to the first connection electrode 371 at the second hole 362, 363, and the second side of the third connection electrode 373 of the first hole 361 can be connected to the second connection electrode 372 at the second hole 362, 363.

[0182] The third connection electrode 373 can include a first connection area 373_1 in contact with the side portion of the semiconductor light emitting device 150, a second connection area 373_2 extending from the first connection area 373_1 and in contact with the top surface of one of the first assembly wire 321 and the second assembly wire 322, and a third connection area 373_3 extending from the second connection area 373_2 and in contact with the inner side surface of the first hole 361.

[0183] The upper side of the first connection area 373_1 can be in contact with the passivation layer 157 of the semiconductor light emitting device 150, and the lower side of the first connection area 373_1 can be in contact with the side surface of the first conductive type semiconductor layer 151 and / or the side surface of the first electrode 154 of the semiconductor light emitting device 150.

[0184] The first connection area 373_1 and the third connection area 373_3 can have the same height, but are not limited thereto.

[0185] On the other hand, since the first hole 361 and the second holes 362, 363 are communicated, in the case where the metal film is deposited to form the connection electrodes 371, 372, 373, the deposited film can be formed in continuity between the first hole 361 and the second holes 362, 363. Therefore, in the second holes 362, 363, the first connection region 371_1 of the first connection electrode 371 and / or the first connection region 372_1 of the second connection electrode 372 can be the first connection region 373_1 of the third connection electrode 373 within the first hole 361. In other words, the first connection region 373_1 can be shared by the first connection electrode 371, the second connection electrode 372, and the third connection electrode 373.

[0186] Therefore, the first connection regions 371_1, 372_1, 273_1 meet the side of the semiconductor light emitting device 150 along the circumference of the semiconductor light emitting device 150 at the first hole 361, and the second connection region 273_2 can meet the top surface of one of the first assembly wire 321 and the second assembly wire 322 along the circumference of the semiconductor light emitting device 150 at the second hole 362, 363. In addition, the second connection region 273_2 of the first hole 361 can extend toward the second connection regions 271_2, 272_2 at the second hole 362, 363, and the third connection regions 271_3, 272_3 of the second hole 362, 363 can extend from the second connection regions 271_2, 272_2 at the second hole 362, 363 and meet the inner side surface of the second hole 362, 363. In addition, the third connection region 273_3 of the first hole 361 can extend from the second connection region 273_2 and meet the inner side surface of the first hole 361.

[0187] According to the embodiment, the connection electrodes 371, 372, 373 are disposed at the first hole 361 and the second holes 362, 363, and attached to the side surface of the semiconductor light emitting device 150, attached to the top surface of the first assembly wire 321 and / or the second assembly wire 322 through the first insulating layer 330, and attached to the inner side surface of the first hole 361 and the second holes 362, 363, so that the bonding force of the semiconductor light emitting device 150 is enhanced, thereby enabling improvement in reliability.

[0188] On the other hand, the first connection electrode 371 can have a first groove 376, the second connection electrode 372 can have a second groove 377, and the third connection electrode 373 can have a third groove 378. The first groove 376, the second groove 377, and the third groove 378 can be formed because the first connection electrode 371, the second connection electrode 372, and the third connection electrode 373 are respectively formed in a deposition manner to be thin in thickness.

[0189] For example, the width W1 of the first groove 376 or the width W2 of the second groove 377 can be greater than the width W3 of the third groove 378.

[0190] On the other hand, the display device 300 of the first embodiment can include a third insulating layer 350.

[0191] The third insulating layer 350 can be disposed in each of the first groove 376, the second groove 377, and the third groove 378. As will be described later in the manufacturing process, the second insulating layer 340 can function as a stopper that determines the height of the connection electrodes 371, 372, and 373. That is, the height of the connection electrodes 371, 372, and 373 can be formed to correspond to the height of the third insulating layer 350. That is, if the height of the third insulating layer 350 is increased, the height of the connection electrodes 371, 372, and 373 can also be increased.

[0192] On the other hand, the display device 300 of the first embodiment can include a fourth insulating layer 360 and an electrode wiring 380.

[0193] The fourth insulating layer 360 can be disposed on the second insulating layer 340 and the third insulating layer 350. The fourth insulating layer 360 can be a planarization layer to facilitate formation of the electrode wiring 380 or other layers. Thus, the top surface of the fourth insulating layer 360 can have a flat surface.

[0194] The electrode wiring 380 can be disposed on the fourth insulating layer 360 and can be electrically connected to the semiconductor light emitting device 150 through the fourth insulating layer 360.

[0195] For example, the electrode wiring 380 can be electrically connected to the second electrode 155 through the fourth insulating layer 360 and the passivation layer 157 of the semiconductor light emitting device 150.

[0196] The first assembly wiring 321 and / or the second assembly wiring 322 can be referred to as a lower electrode wiring, and the electrode wiring 380 can be referred to as an upper electrode wiring.

[0197] Thus, the semiconductor light emitting device 150 can emit light by the voltage supplied by the second assembly wiring 322 and the electrode wiring 380.

[0198] Explanations omitted in the above description can be easily understood from Figure 7 and explanations related thereto.

[0199] The first to fourth insulating layers 330 to 360 can be composed of an organic substance or an inorganic substance. For example, at least one or more of the first to fourth insulating layers 330 to 360 can be composed of an organic substance. For example, at least two or more of the first to fourth insulating layers 330 to 360 can be composed of the same substance.

[0200] According to the first embodiment, at least one or more second holes 362, 363 extending from the first hole 361 for assembling the semiconductor light emitting device 150 in the lateral direction are formed, and connection electrodes 371, 372 are disposed in the holes, so that the connection electrodes 371, 372 do not cause electrical disconnection, and thus, can prevent a failure in lighting.

[0201] According to the first embodiment, the connection electrodes 371, 372, 373 are disposed in the first hole 361 and the second holes 362, 363, and are attached to the lateral surface of the semiconductor light emitting device 150, to the top surface of the first assembly wire 321 and / or the second assembly wire 322 through the first insulating layer 330, and to the inner lateral surface of the first hole 361 and the second holes 362, 363, so that the bonding force of the semiconductor light emitting device 150 is enhanced, and thus, can improve reliability.

[0202] According to the first embodiment, since the second holes 362, 363 are formed to remove the thick second insulating layer 340, the strength of an electric field in the second holes 362, 363 is enhanced without the second holes 362, 363, and thus, the dielectrophoretic force is increased, so that the semiconductor light emitting device 150 can be pulled by a stronger dielectrophoretic force, and thus, can improve assembly rate.

[0203] According to the first embodiment, since the connection electrodes 371, 372, 373 are electrically connected along the circumference of the semiconductor light emitting device 150, even if the semiconductor light emitting device 150 is inclined to one side in the first hole 361, an equal voltage is supplied, and thus, uniform brightness is ensured between the respective sub-pixels, and thus, can improve image quality.

[0204] Figures 13 to 20 is a diagram for explaining a method of manufacturing the display device of the embodiment.

[0205] As shown in Figure 13 , the second insulating layer 340 disposed on the substrate 310 can be formed with the first hole 361 and the second holes 362, 363 extending from the first hole 361 in the lateral direction. The first hole 361 and the second holes 362, 363 can be positioned above the first assembly wire 321.

[0206] As shown in Figure 14 , by performing the self-assembly process Figure 8 , the semiconductor light emitting device 150 can be assembled to the first hole 361.

[0207] Next, by performing an etching process, the first insulating layer 330 exposed in the first hole 361 and the second holes 362, 363 is removed, so that the first assembly wire 321 and / or the second assembly wire 322 can be exposed to the outside. Thus, the first insulating layer 330 is removed in the first hole 361 and the second holes 362, 363, so that openings 331, 332 exposing the first assembly wire 321 and / or the second assembly wire 322 to the outside can be formed.

[0208] Although not illustrated, the first assembly wire 321 and / or the second assembly wire 322 can also be removed in correspondence with the removed first insulating layer 330. In such a case, a portion of the top surface of the substrate 310 can be exposed to the outside.

[0209] As Figure 15 illustrated, a metal film 370 can be deposited on the second insulating layer 340 and the semiconductor light emitting device 150. The metal film 370 can be in contact with the first assembly wire 321 and / or the second assembly wire 322 through the openings 331, 332 in the first hole 362 and the second holes 363, respectively.

[0210] Since the metal film 370 is formed to be thin, by the metal film 370 deposited in the first hole 361 and the second holes 362, 363, grooves 376, 377 can be formed.

[0211] According to an embodiment, the second holes 362, 363 extending from the first hole 361 can be formed, and the metal film 370 can be formed in the second holes 362, 363. Since the width W11 or the length L11 of the second holes 362, 363 is relatively large, the metal film 370 deposited in the second holes 362, 363 can be continuously connected without interruption.

[0212] As Figure 16 illustrated, an insulating film 351 can be formed on the metal film 370. The insulating film 351 can also be formed in the grooves 376, 377 formed by the metal film 370 deposited in the first hole 361 and the second holes 362, 363.

[0213] The insulating film 351 can be formed on the upper side of the semiconductor light emitting device 150, but is not limited thereto.

[0214] As Figure 17 illustrated, by performing an ashing process, the remaining insulating film 351 except for the insulating film 351 formed in the grooves 376, 377 can be removed. The insulating film 351 formed in the grooves 376, 377 can become a third insulating layer 350.

[0215] As Figure 18As shown, by performing the patterning process, the metal film 370 can be removed. Since the third insulating layer 350 functions as a mask, the metal film 370 deposited in the first hole 361 and the second holes 362, 363 can not be removed. Thus, the metal film 370 not removed in the first hole 361 and the second holes 362, 363 can become the connection electrodes 371, 372, 373.

[0216] By the patterning process, the second insulating layer 340, the third insulating layer 350, and the metal film 370 on the semiconductor light emitting device can be removed. However, the metal film 370 deposited in the first hole 361 and the second holes 362, 363 can not be removed any more, since it has a relatively thin thickness between the second insulating layer and the third insulating layer 350.

[0217] As shown, a fourth insulating layer 360 can be formed on the second insulating layer 340, the third insulating layer 350, and the semiconductor light emitting device 150, and a contact hole 365 can be formed by removing the fourth insulating layer 360 and the passivation layer 157 of the semiconductor light emitting device 150. Figure 19 As shown, an electrode wiring 380 can be formed on the fourth insulating layer 360, and electrically connected to the second electrode 155 of the semiconductor light emitting device 150 through the contact hole 365.

[0218] Figure 20

[0219] [Second Embodiment]

[0220] Figure 21 FIG. 10 is a plan view showing a display device according to the second embodiment.

[0221] The second embodiment is the same as the first embodiment except for four second holes 362-365. In the second embodiment, the same reference numerals are given to constituent elements having the same shape, structure, and / or function as those of the first embodiment, and detailed description is omitted.

[0222] Referring to Figure 21 In the display device 300A of the second embodiment, the plurality of second holes 362-365 can be formed to extend from the first hole 361 in the lateral direction.

[0223] The plurality of second holes can include a 2-1 hole 362, a 2-2 hole 363, a 2-3 hole 364, and a 2-4 hole 365.

[0224] ​​For example, the 2-1 hole 362 and the 2-2 hole 363 can be located on the first diagonal line 391. For example, the 2-3 hole 364 and the 2-4 hole 365 can be located on the second diagonal line 392. The first diagonal line 391 and the second diagonal line 392 can cross each other by 90 degrees, but are not limited thereto. Thus, the 2-1 hole 362, the 2-2 hole 363, the 2-3 hole 364, and the 2-4 hole 365 can be spaced apart from each other by 90 degrees with the center of the first hole 361 as a reference.

[0225] For example, the 2-1 hole 362, the 2-2 hole 363, the 2-3 hole 364, and the 2-4 hole 365 can be radially arranged with the first hole 361 as a center.

[0226] For example, the 2-1 hole 362 and the 2-3 hole 364 can be arranged above the first assembly line 321, and the 2-2 hole 363 and the 2-4 hole 365 can be arranged above the second assembly line 322.

[0227] The connection electrodes (371, 372, 373) of the first hole 361 and the plurality of second holes 362 to 365 can be arranged in a matrix form. For example, the first connection electrode 371 can be arranged in the first hole 361, two second connection electrodes can be arranged in the 2-1 hole 362 and the 2-3 hole 364, and two connection electrodes can be arranged in the 2-2 hole 363 and the 2-4 hole 365. Figure 10 Figure 11 According to the second embodiment, by electrically connecting more connection electrodes to the semiconductor light emitting device 150, voltage can be more smoothly supplied, and thus brightness can be improved.

[0228] According to the second embodiment, the semiconductor light emitting device 150 is more firmly combined to the substrate 310 by the more connection electrodes, and thus the combination force can be further improved.

[0229] According to the second embodiment, since the second holes 362 to 365 are formed at equal intervals from each other, when self-assembly is performed, the semiconductor light emitting device 150 assembled in the first hole 361 can be aligned to a prescribed position without being deviated to one side.

[0230] According to the second embodiment, since the second holes 362 to 365 are formed at equal intervals from each other, when self-assembly is performed, the semiconductor light emitting device 150 assembled in the first hole 361 can be aligned to a prescribed position without being deviated to one side.

[0231] [Third Embodiment]

[0232] Figure 22 FIG. 10 is a plan view showing a display device according to the third embodiment.

[0233] ​The third embodiment is the same as the first embodiment or the second embodiment except that the first assembly wiring 321 and the second assembly wiring 322 are arranged in different layers, and the second assembly wiring 322 and the semiconductor light emitting device 150 are electrically connected by the connection electrodes 371, 372, 373. In the third embodiment, the same reference numerals are given to constituent elements having the same shape, structure, and / or function as those of the first embodiment or the second embodiment, and detailed description is omitted.

[0234] Referring to Figure 22 The display device 300B of the third embodiment can include the substrate 310, the first insulating layer 330, the first assembly wiring 321, the second assembly wiring 322, the second insulating layer 340, the semiconductor light emitting device 150, the connection electrodes 371, 372, 373, the third insulating layer 350, the fourth insulating layer 360, and the electrode wiring 380.

[0235] The first assembly wiring 321 and the second assembly wiring 322 can be arranged in different layers. For example, the first assembly wiring 321 can be arranged between the substrate 310 and the first insulating layer 330. For example, the second assembly wiring 322 can be arranged on the first insulating layer 330, and can be exposed to the outside through the first hole 361 and the second holes 362, 363. In addition, a part of the top surface of the first insulating layer 330 can also be exposed to the outside through the first hole 361 and the second holes 362, 363.

[0236] The connection wiring can be arranged in the first hole 361 and the second holes 362, 363. The connection wiring arranged in the second holes 362, 363 can include the first connection wiring 371 and the second connection wiring 372. The first side of the first connection wiring can be electrically connected to the first side portion 158a of the semiconductor light emitting device 150, and the second side of the first connection wiring can be electrically connected to a part of the top surface of the first insulating layer 330. The first side of the second connection wiring can be electrically connected to the second side portion 158b of the semiconductor light emitting device 150, and the second side of the second connection wiring can be electrically connected to a part of the top surface of the second assembly wiring 322.

[0237] The semiconductor light emitting device 150 is, for example, a vertical type semiconductor light emitting device, and a bonding layer that is a part of the first electrode 154 can be provided on the lower side thereof. The bonding layer is melted by a heat press process, and the semiconductor light emitting device 150 and the substrate 310 can be bonded. At this time, the semiconductor light emitting device 150 and the second assembly wiring 322 can be electrically connected with the bonding layer as a medium. The second assembly wiring 322 can not only generate an electric field for self-assembly, but also supply a voltage for causing the semiconductor light emitting device 150 to emit light. The second assembly wiring 322 can be a lower electrode wiring.

[0238] Tin (Sn) or indium (In) is used as the bonding layer, but these films are not good in quality, increase the resistance, and can cause a decrease in luminance. In addition, the bonding layer can escape to the periphery of the semiconductor light emitting device 150 due to heat pressing, rather than being between the semiconductor light emitting device 150 and the substrate 310, and can cause poor electrical connection between the semiconductor light emitting device 150 and the substrate 310.

[0239] To solve such a problem, in an embodiment, the side portion of the semiconductor light emitting device 150 can be electrically connected to the second assembly wire 322 using the connection electrodes 371, 372, 373.

[0240] According to the third embodiment, the lower side of the semiconductor light emitting device 150 can be directly connected to the second assembly wire 322, and the side portion of the semiconductor light emitting device 150 can be connected to the second assembly wire 322 using the connection electrodes 371, 372, 373, thereby enabling an increase in luminance and preventing poor lighting.

[0241] [Fourth Embodiment]

[0242] Figure 23 FIG. 10 is a plan view showing a display device according to a fourth embodiment.

[0243] The fourth embodiment is the same as the third embodiment except that the connection electrodes 371, 372, 373 are electrically connected to the second assembly wire 322 and the first assembly wire 321. In the fourth embodiment, the same reference numerals are given to constituent elements having the same shape, structure, and / or function as those of the third embodiment, and detailed descriptions thereof are omitted.

[0244] Referring to Figure 23 , the display device 300C of the fourth embodiment can include the substrate 310, the first insulating layer 330, the first assembly wire 321, the second assembly wire 322, the second insulating layer 340, the semiconductor light emitting device 150, the connection electrodes 371, 372, 373, the third insulating layer 350, the fourth insulating layer 360, and the electrode wire 380.

[0245] The first assembly wire 321 and the second assembly wire 322 can be disposed in different layers. For example, the first assembly wire 321 can be disposed between the substrate 310 and the first insulating layer 330. For example, the second assembly wire 322 can be disposed on the first insulating layer 330 and can be exposed to the outside through the first hole 361 and the second holes 362, 363. In addition, a portion of the top surface of the first insulating layer 330 can also be exposed to the outside through the first hole 361 and the second holes 362, 363.

[0246] The first and second connection lines 371 and 372 can be electrically connected to the first and second side portions 158a and 158b of the semiconductor light emitting device 150. The first connection line 371 can be electrically connected to the first side portion 158a of the semiconductor light emitting device 150, and the second connection line 372 can be electrically connected to the second side portion 158b of the semiconductor light emitting device 150.

[0247] For example, the first and second assembly lines 321 and 322 can be electrically connected to each other after the self-assembly process is completed, and the same voltage can be supplied to the semiconductor light emitting device 150 through the first and second assembly lines 321 and 322. The first and second assembly lines 321 and 322 can be lower electrode lines.

[0248] According to the fourth embodiment, the connection electrodes 371, 372, and 373 are electrically connected to the second assembly line 322 and the first assembly line 321, so that a voltage can be supplied from the second assembly line 322 and the first assembly line 321, and then the brightness can be improved and the non-lighting failure can be prevented.

[0249] The above detailed description is not to be interpreted as limiting in all aspects and should be understood to be exemplary in all respects. The scope of the embodiments should be determined by reasonable interpretation of the appended claims and all modifications within the scope of the embodiments include in the scope of the embodiments.

[0250] Industrial applicability

[0251] The embodiments can be applied to the field of displaying images or information.

[0252] The embodiments can be applied to the field of displaying images or information using semiconductor light emitting devices. The semiconductor light emitting device can be a micro-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

Claims

1. A display device, wherein, comprises: a substrate; a first insulating layer disposed over the substrate; a first group of assembly lines and a second group of assembly lines disposed over the substrate; a second insulating layer disposed over the first and second groups of assembly lines, having a first hole and at least one second hole extending toward a side direction of the first hole; a semiconductor light emitting device disposed in the first hole; and a connection electrode disposed in the second hole, the second hole includes: a 2-1 hole disposed over the first group of assembly lines; and a 2-2 hole disposed over the second group of assembly lines, the connection electrode includes: a first connection electrode disposed in the 2-1 hole; and a second connection electrode disposed in the 2-2 hole, the connection electrode includes a third connection electrode, the third connection electrode is disposed in the first hole along a periphery of the semiconductor light emitting device, the first and second connection electrodes each include: a first connection region that contacts a side portion of the semiconductor light emitting device; a second connection region that extends from the first connection region and contacts a top surface of one of the first and second groups of assembly lines; and a third connection region that extends from the second connection region and contacts an inner side surface of the second hole, the 2-1 hole includes a pair of 2-1 holes disposed on a first diagonal line, the 2-2 hole includes a pair of 2-2 holes disposed on a second diagonal line perpendicular to the first diagonal line, the first connection electrode includes a pair of first connection electrodes respectively disposed in the pair of 2-1 holes, the second connection electrode includes a pair of second connection electrodes respectively disposed in the pair of 2-2 holes, the semiconductor light emitting device includes a light emitting portion, a first electrode disposed below the light emitting portion, and a second electrode disposed above the light emitting portion, at least one of the first group of assembly lines and the second group of assembly lines is electrically connected to the first electrode of the semiconductor light emitting device, the connection electrode is configured to electrically connect at least one of the first group of assembly lines and the second group of assembly lines to the first electrode of the semiconductor light emitting device, the first electrode of the semiconductor light emitting device overlaps both the first group of assembly lines and the second group of assembly lines in a vertical direction. 2.The display device of claim 1, wherein a first side of the third connection electrode is connected to the first connection electrode, a second side of the third connection electrode is connected to the second connection electrode. 3.The display device of claim 1, wherein the first connection electrode has a first slot, the second connection electrode has a second slot, the third connection electrode has a third slot, the first, second, and third slots include a third insulating layer. 4.The display device of claim 3, wherein a width of the first slot is greater than a width of the third slot. 5.The display device of claim 3, wherein a width of the second slot is greater than a width of the third slot. 6.The display device of claim 1, wherein ​ The third connection electrode includes: a first connection region that is in contact with the side portion of the semiconductor light emitting device; a second connection region that extends from the first connection region and is in contact with a top surface of one of the first and second assembly wires; and a third connection region that extends from the second connection region and is in contact with an inner side surface of the first hole.

7. The display device according to claim 6, wherein in the second hole, the first connection region of each of the first and second connection electrodes is the first connection region of the third connection electrode in the first hole.

8. The display device according to claim 3, wherein includes: a fourth insulating layer disposed on the second and third insulating layers; and an electrode wire that is electrically connected to the semiconductor light emitting device through the fourth insulating layer.

9. The display device according to claim 1, wherein a width of the second hole is greater than a gap between an outer side surface of the semiconductor light emitting device and the inner side surface of the first hole.

10. The display device according to claim 1, wherein the semiconductor light emitting device includes: a passivation layer disposed on a first side portion of the light emitting portion and the second electrode; the connection electrode is in contact with a second side portion of the light emitting portion and a side surface of the first electrode; the second side portion of the light emitting portion is located below the first side portion of the light emitting portion.

11. The display device according to claim 1, wherein the first and second assembly wires are disposed on the same layer.

12. The display device according to claim 1, wherein the first and second assembly wires are disposed on different layers. ​

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