A method for manufacturing a precision metal mask plate, the precision metal mask plate, and a mask device

Abstract

The application provides a precision metal mask manufacturing method, a precision metal mask and a mask device. The manufacturing method comprises the following steps: selecting a raw material sheet; processing at least one pattern area for evaporation on the raw material sheet, the pattern area has a plurality of openings penetrating from top to bottom; the processing mode of the pattern area comprises the following steps: using etching solution A to etch a plurality of first recesses on the first surface and the second surface of the raw material sheet respectively and a plurality of second recesses corresponding to the first recesses, the second recesses and the first recesses penetrate each other, and a first convex part is formed at the joint of the first recesses and the second recesses; combining the etching solution A and at least one auxiliary gas B without etching effect to prepare a water vapor two-fluid; using the water vapor two-fluid and etching the first convex part from the side of the second recesses to remove the first convex part and form a third recess; and forming a first hole section, a second hole section and a third hole section in the openings from the first recesses, the second recesses and the third recesses respectively. The above method, the FMM and the mask device manufactured by the method can reduce or even eliminate the shadow defects during evaporation, the CD uniformity of the FMM is easy to control, and the yield is high.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor display, and in particular to a manufacturing method of a fine metal mask, the fine metal mask and a mask device. BACKGROUND

[0002] A fine metal mask (FMM) is an essential jig in the evaporation process of producing an OLED panel, and the precision of the FMM is directly related to the yield and quality of the OLED panel. In the past, there are two common ways to etch the opening pattern on the FMM, one is single-sided etching, and the other is double-sided etching.

[0003] Single-sided etching is to spray etching liquid on one side of the mask and etch until the mask is etched through and the required opening pattern is formed. When the FMM is etched in this way, the critical dimension (CD) precision of the FMM is difficult to control, and the uniformity is poor, resulting in a low yield of the output FMM and high manufacturing cost.

[0004] Double-sided etching is to spray etching liquid on both sides of the mask and etch, and the etching liquid penetrates the mask and forms the required opening pattern. Using this method to process the FMM can better control the CD uniformity and improve the yield of the output FMM. However, using this traditional double-sided etching FMM for evaporation can produce shadow defects.

[0005] The above-mentioned traditional FMM and its manufacturing method restrict the improvement of the evaporation precision and PPI of the FMM. Therefore, a new design scheme is needed to solve the above-mentioned problems. SUMMARY

[0006] In order to solve or improve the above-mentioned technical problems of the traditional FMM, the first aspect of the embodiment of the present application provides a manufacturing method of a fine metal mask, comprising:

[0007] Selecting a raw material sheet;

[0008] Processing at least one pattern area for evaporation on the raw material sheet, the pattern area having a plurality of openings penetrating up and down;

[0009] The processing method of the pattern area comprises the following steps:

[0010] Using etching liquid A to etch a plurality of first recesses and a plurality of second recesses corresponding to the first recesses on the first surface and the second surface of the raw material sheet, respectively, the second recesses and the first recesses penetrate each other, and a first protrusion is formed at the joint of the two.

[0011] The etching liquid A is combined with at least one auxiliary gas B without etching effect to prepare a water vapor two-fluid;

[0012] The water vapor two-fluid is used to etch the first convex part from the side where the second concave part is located, so as to remove the first convex part and form a third concave part.

[0013] The first hole body section, the second hole body section and the third hole body section in the opening are formed by the first concave part, the second concave part and the third concave part respectively.

[0014] The above scheme is based on the traditional double-sided etching method, and a third etching is added to remove the convex part (i.e. the first convex part) at the joint of the first and second etching in the opening, which can effectively reduce or even eliminate the shadow defects in the evaporation process, and can better control the CD uniformity to ensure the yield of the mask plate.

[0015] In addition, the etching of the convex part by the water vapor two-fluid prepared by combining the original etching liquid and the auxiliary gas can effectively control the etching speed and depth, and avoid the situation that the etching speed and depth are difficult to control when the convex part is small.

[0016] In addition, the water vapor two-fluid is used for the third etching in the present scheme, so that the morphology of the second convex part formed at the joint of the first and third concave parts is more regular, i.e. the second convex part is not prone to uneven morphology. Since the second convex part is directly related to the effective evaporation area of the opening, the above improvement can greatly improve the precision of the evaporation product.

[0017] Optionally, the etching of the first concave part and the etching of the second concave part are performed simultaneously, or the etching of the first concave part is performed before the etching of the second concave part, or the etching of the second concave part is performed before the etching of the first concave part.

[0018] Further, the etching liquid A and the auxiliary gas B are mixed through a two-fluid nozzle;

[0019] The etching liquid A and the auxiliary gas B are respectively supplied to the two-fluid nozzle at a preset volume flow rate, and the volume flow rate ratio of the etching liquid A and the auxiliary gas B is controlled to adjust the etching speed.

[0020] Further, the volume flow rate ratio of the etching liquid A and the auxiliary gas B is selected from 1:4 to 4:1.

[0021] The second aspect of the embodiment of the present application provides a precision metal mask plate manufactured by the manufacturing method described in the first aspect, wherein the precision metal mask plate comprises at least one pattern area for evaporation, and the pattern area has a plurality of openings penetrating from top to bottom.

[0022] The opening has a first hole section, a second hole section and a third hole section, the depth of the first hole section is H1, the depth of the second hole section is H2, the depth of the third hole section is H3, and the following conditions are satisfied:

[0023] H2≥H3>H1, and H1 approaches 0 but is not 0.

[0024] The precision metal mask plate in the above scheme not only has good CD uniformity, but also greatly reduces the shadow problem in the evaporation process, and in addition, the effective aperture of the opening in the pattern area has neat topographic features. Therefore, it helps to greatly improve the quality of the evaporation product.

[0025] Optionally, the depth H1 of the first hole section is ≤1 μm.

[0026] Preferably, 0.05 μm≤H1≤0.5 μm.

[0027] Optionally, the thickness H0 of the precision metal mask plate is 15 μm-30 μm.

[0028] The material of the precision metal mask plate is selected from one of Invar36, Super-Invar32, SUS304 and SUS420.

[0029] Further, the second hole section has an inclination angle β, and the third hole section has an inclination angle γ, both β and γ are acute angles, and β≥γ.

[0030] Further, the first hole section and the third hole section form a second convex part at the joint, and the line between the second convex part and the edge of the mouth of the second hole section has an inclination angle θ, and 45°≤θ≤55°.

[0031] The third aspect of the embodiment of the present application provides a mask device comprising the precision metal mask plate described in the second aspect.

[0032] In summary, the technical solutions of the above aspects and optional solutions thereof solve the restriction of the traditional single-sided etching and double-sided etching processing methods on the improvement of FMM to higher evaporation precision and PPI, making it possible for the production process and quality of the evaporation product to move to a higher level.

[0033] In addition, other additional aspects and advantages of the present application will be given in part in the following description, part will become obvious from the following description, or will be understood by the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A schematic diagram of the cross-sectional morphology of a conventional FMM at one of the pattern openings;

[0035] Figure 2 For use Figure 1 The film formation of organic materials on the substrate surface during evaporation in traditional FMM;

[0036] Figure 3 Schematic diagram of the cross-section of an opening of an FMM in one embodiment of the present invention;

[0037] Figure 4 for Figure 3 Schematic diagram of the single-side structure of the opening in FIG.

[0038] Figure 5 Schematic diagram of the process of forming the opening of the FMM of the present invention;

[0039] Figure 6 Schematic diagram of the manufacturing process of FMM of the present invention;

[0040] In the figure: 100, substrate; 200, double-sided etching mask; 210, double-sided etching opening; 211, convex portion of the inner wall of the opening; 300, evaporation source;

[0041] 400. Mask; 401. Raw sheet; 402. First concave portion; 403. Second concave portion; 404. Third concave portion; 410. Opening; 411. First convex portion; 412. Second convex portion; 413. Third convex portion;

[0042] 500, photoresist layer; 600, PET film; 700, resin ink. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. It is obvious that the embodiments described below are only a part of the embodiments of the present invention, rather than all the embodiments. For reference, the following records and drawings are brief examples to help understand the present invention, and are not intended to limit the technical scope of the present invention. In other words, the embodiments described below may have a variety of variations, which fall within the scope of the technical ideas of the present invention, and ordinary technicians in the technical field to which the present invention belongs can easily understand the technical ideas of the present invention through the following description. The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0044] At present, the improvement of the quality of the precision metal mask (FMM) product is limited by the traditional processing method. Using the traditional single-sided etching method for processing, the CD precision is difficult to control, the uniformity is poor, which leads to low yield and high cost. Using the traditional double-sided etching method for processing, although the CD uniformity can be well controlled and the yield can be improved, shadow defects will be generated during evaporation. Here, for the traditional double-sided etched FMM, the intersection of the recess formed by etching on both sides in the pattern opening will form a convex part, which exists in each pattern opening of this FMM. Research shows that the convex part here is the key to causing shadow defects in the evaporation product.

[0045] For example, Figure 1 A FMM processed by the traditional double-sided etching method is shown in FIG. 1, that is, a double-sided etched mask 200. In Figure 1 Only the cross-sectional shape of one opening of the double-sided etched mask 200 is shown in FIG. 1, and it can be understood that a plurality of Figure 1 The double-sided etched opening 210 is shown in FIG. 1. Referring to Figure 1 As shown in FIG. 1, the double-sided etched opening 210 has an opening inner wall convex part 211, and the step high and step width of the opening inner wall convex part 211 are marked in the figure, that is, the depth SH and the width SW.

[0046] Figure 2 The use of the FMM in FIG. 1 to perform evaporation is shown in FIG. 2. Figure 1 The film formation of the organic material on the surface of the substrate when the FMM in FIG. 1 is used to perform evaporation is shown in FIG. 2. Figure 2 In FIG. 2, due to the step high and step width of the opening inner wall convex part 211, part of the organic material released by the evaporation source 300 is blocked, resulting in uneven thickness of the edge of the organic material functional layer on the substrate 100, that is, the aforementioned shadow defect is generated. Research shows that the step high and step width of the opening inner wall convex part 211 are directly related to the size of the shadow defect area.

[0047] Therefore, the present disclosure provides a method for manufacturing a precision metal mask, which aims to improve the aforementioned CD uniformity and product yield of the FMM, and at the same time, to improve or even eliminate the aforementioned shadow defect caused by using the FMM for evaporation, and to improve the quality of the evaporation product. And to resolve the restriction of the traditional single-sided etching and double-sided etching processing method on the improvement of the FMM to higher evaporation precision and PPI, so that the production process and quality of the evaporation product can be improved to a higher level.

[0048] The method for manufacturing a precision metal mask provided by the present disclosure comprises the following steps:

[0049] Step 1, selecting a raw material sheet

[0050] In this step, the material of the selected raw sheet is one of Invar 36, Super-Invar 32, SUS304, SUS420 and other alloys; the thickness of the sheet is preferably 15-30 μm, for example, the thickness of the sheet is 16 μm, 17 μm, 18 μm, 19 μm, etc. Here, the selection of the sheet thickness by the present disclosure is not limited to this, and other selections can also be made according to the actual needs such as the precision of the target FMM, for example, when making an FMM with higher precision, a sheet with a thickness of less than 15 μm can be selected, and when making an FMM with relatively low precision, a sheet with a thickness of more than 30 μm can be selected.

[0051] In addition, the raw sheet in this step is made by cutting or other processing of a strip or a coil, or it can also be obtained by direct purchase.

[0052] Step two, processing a pattern area for evaporation on the selected raw sheet

[0053] In this step, at least one pattern area for evaporation is processed on the raw sheet, and the processed pattern area has a plurality of openings passing through up and down.

[0054] The processing method of the pattern area includes the following steps:

[0055] First, use etching solution A to etch a plurality of first recesses on the first surface of the raw sheet and a plurality of second recesses corresponding to the first recesses on the second surface of the raw sheet, the second recesses and the first recesses are mutually penetrating, and a first protrusion is formed at the interface between the two. Here, the etching solution A is a precision metal mask etching reagent commonly used in the prior art, which is not described in detail here.

[0056] Then, etching solution A is combined with at least one auxiliary gas B which does not have etching effect to prepare a water vapor two-fluid. Here, not having etching effect means that the auxiliary gas B will not substantially etch the raw sheet. The auxiliary gas B can be a mixed gas including a plurality of elemental gases, such as compressed air, or a single element gas, such as nitrogen, helium and the like in a compressed state. Considering the cost, the compressed air with the lowest cost is preferably used as the auxiliary gas B.

[0057] Finally, the first protrusion is etched from the side where the second recess is located using the water vapor two-fluid to remove the first protrusion and form a third recess.

[0058] The first hole body segment, the second hole body segment and the third hole body segment in the opening are formed by the first recess, the second recess and the third recess, respectively.

[0059] In the foregoing, the first surface corresponds to the side surface of the manufactured FMM facing the substrate when used for evaporation, and the second surface corresponds to the side surface of the manufactured FMM facing the evaporation source when used for evaporation.

[0060] The following is a specific embodiment of the FMM manufacturing method disclosed in the present invention. Figure 5 and attached Figure 6 , this specific embodiment includes the following steps:

[0061] S10: Select a raw material sheet 401.

[0062] The raw material sheet 401 selected in this step is consistent with that described in the previous step 1, and will not be repeated here.

[0063] S20. Etch the first concave portion 402.

[0064] See attached Figure 6 As shown in ① to ④ in FIG. First, a photoresist layer 500 is evenly applied to the first surface (the upper surface in the figure) and the second surface (the lower surface in the figure) of the raw material sheet 401. Then, the photoresist layer 500 on both sides is exposed and developed to reveal the portion of the raw material sheet 401 to be etched. Subsequently, a PET film 600 is adhered to the second surface of the raw material sheet 401 to protect it. Subsequently, the first surface of the raw material sheet 401 is etched using etching solution A to produce a plurality of first recesses 402.

[0065] After etching is completed, the PET film 600 on the second surface is removed.

[0066] S30 , etching the second recess 403 .

[0067] See attached Figure 6 ⑤ to ⑦ in FIG. In this step, following step S20, the first surface is first coated with resin ink 700. Subsequently, the second surface is etched using the aforementioned etching solution A to form a plurality of second recesses 403. These second recesses 403 correspond to the first recesses 402 in the thickness direction of the raw material sheet 401 and extend through each other. First protrusions 411 are formed at the junction of the second recesses 403 and the first recesses 402.

[0068] After etching is completed, the resin ink 700 on the first surface is removed.

[0069] The above forms the Figure 1 The FMM processed by the traditional double-sided etching method has the same opening structure.

[0070] S40. Etch the third recessed portion 404.

[0071] Referring to FIG. 7, the first protrusion 411 is removed by etching the sheet 400 from the second side (i.e., the lower side of the sheet 400 in FIG. 7) to form a third recess 404. The third recess 404 is formed with a second protrusion 412 at the interface with the first recess 402 and a third protrusion 413 at the interface with the second recess 403. Figure 6 Referring to FIG. 7, the first protrusion 411 is removed by etching the sheet 400 from the second side (i.e., the lower side of the sheet 400 in FIG. 7) to form a third recess 404. The third recess 404 is formed with a second protrusion 412 at the interface with the first recess 402 and a third protrusion 413 at the interface with the second recess 403.

[0072] The water two-fluid is used to etch the first protrusion 411 from the second side (i.e., the lower side of the sheet 400 in FIG. 7) to remove the first protrusion 411 and form the third recess 404. The third recess 404 is formed with the second protrusion 412 at the interface with the first recess 402 and the third protrusion 413 at the interface with the second recess 403. Figure 6 Thus, the opening 410 is formed with a first hole segment, a second hole segment, and a third hole segment. The first hole segment is the portion of the first recess 402 that remains, the second hole segment is the portion of the second recess 403 that remains, and the third hole segment is the portion of the third recess 404 that remains.

[0073] After the etching is completed, the photoresist layer 500 on the first surface and the second surface is removed, and the above-mentioned pattern region of the FMM of the present disclosure is obtained.

[0074] In the above-mentioned scheme, the first protrusion 411 at the interface of the first recess 402 and the second recess 403 is removed by the third etching, which effectively reduces or even eliminates the evaporation shadow defects caused by the existence of the first protrusion 411. At the same time, since the first recess 402 and the second recess 403 are determined in advance before the third etching, and part of the first recess 402 is retained on the finished FMM, the CD uniformity can be better controlled, thereby ensuring that the output mask has a high yield.

[0075] Here, since the first protrusion 411 is small, using the original etching solution to etch it can easily cause over-etching, resulting in product scrap. Therefore, in the present scheme, the water two-fluid prepared by combining the original etching solution with the auxiliary gas is used to etch the first protrusion 411, which can effectively control the etching speed and depth, avoid the situation that the etching speed and depth are difficult to control when the original etching solution is used in the case that the first protrusion 411 is small, and make the re-etching of the first protrusion 411 controllable.

[0076]

[0077] ​In addition, the third etching is performed by using the water vapor two-fluid described above, so that the etching of the first protrusion 411 in the opening 410 is more uniform, and the second protrusion 412 formed at the joint of the first recess 402 and the third recess 404 has a more regular shape, i.e. the second protrusion 412 is less likely to have a jagged shape. Since the second protrusion 412 is directly related to the effective evaporation area of the opening 410, the above improvement can greatly improve the accuracy of the evaporation product.

[0078] In the foregoing embodiments of the FMM manufacturing method, the etching of the first recess 402 is performed before the etching of the second recess 403, but the order of the etching of the first recess 402 and the etching of the second recess 403 is not limited to this. In another optional embodiment of the present disclosure, the etching of the first recess 402 and the etching of the second recess 403 can be performed simultaneously, or the etching of the second recess 403 can be performed before the etching of the first recess 402.

[0079] In an optional embodiment, the etching liquid A and the auxiliary gas B are mixed by a two-fluid nozzle to form the water vapor two-fluid described above. Here, the two-fluid nozzle used is a commercially available two-fluid atomizing nozzle, which is a prior art and will not be described here.

[0080] In addition, in a typical embodiment, the etching liquid A and the auxiliary gas B are supplied to the two-fluid nozzle at a respective predetermined volumetric flow rate, and the volumetric flow rate ratio of the etching liquid A and the auxiliary gas B is controlled to adjust the etching speed. As a preferred embodiment of the present disclosure, the volumetric flow rate ratio of the etching liquid A and the auxiliary gas B is selected from 1:4 to 4:1, for example, the volumetric flow rate ratio of the etching liquid A and the auxiliary gas B is 2:3 or 1:1 or 3:2, etc. According to the present disclosure, the appropriate volumetric flow rate ratio can be selected within the above range according to the material, thickness specification, opening specification, etc. of the FMM to be manufactured.

[0081] The defects of the precision metal mask (FMM) processed by the conventional single-sided etching and double-sided etching have been described in the foregoing description. In view of this, the present disclosure further provides an FMM manufactured by the manufacturing method in the foregoing embodiments. Referring to the FMM shown in Figure 3 and Figure 4 the FMM of the present disclosure is described as follows.

[0082] The FMM of the present disclosure includes one or more (including two) pattern areas for evaporation, and the pattern area has a plurality of openings 410 passing through from top to bottom, which are used for the material released by the evaporation source to pass through. During the evaporation process, the material released by the evaporation source is evaporated onto the substrate through the pattern area to form the required film pattern on the substrate.

[0083] Attachment Figure 3 FIG. 4 shows a schematic diagram of the cross-sectional shape of an opening 410 of the FMM disclosed herein. Figure 3 As shown, the opening 410 has a first hole body segment, a second hole body segment and a third hole body segment, and the first hole body segment corresponds to Figure 3 The first recess 402 in the second hole section corresponds to Figure 3 The second recess 403 in the third hole section corresponds to Figure 3 The third recess 404 in .

[0084] like Figure 4 As shown, the depths of the first, second, and third hole segments are marked. The depth here specifically refers to the depth in the thickness direction of the FMM. The depth of the first hole segment is H1, the depth of the second hole segment is H2, and the depth of the third hole segment is H3. The FMM of the present disclosure satisfies: H2 ≥ H3 > H1, and H1 approaches zero but does not equal zero. If H1 is 0, it means that the first hole segment corresponding to the first recess 402 has been completely removed, which may adversely affect CD uniformity, resulting in poor CD uniformity in the produced FMM.

[0085] Compared to FMMs fabricated using traditional single-sided and double-sided etching methods, the FMM disclosed in this solution not only exhibits superior CD uniformity but also significantly reduces shadowing during the vapor deposition process. Furthermore, because the third aperture segment is fabricated using the aforementioned water vapor two-fluid process, the effective aperture of the opening 410 in the patterned area exhibits uniform morphology. This significantly improves the quality of vapor-deposited products.

[0086] See also Figure 3 As shown in FIG, the present disclosure has a second convex portion 412 at the junction of the first concave portion 402 and the third concave portion 404 (i.e., the junction of the first hole body section and the third hole body section). The second convex portion 412 is generated after the third concave portion 404, which is etched last, is etched. The depth H1 of the first hole body section is the vertical distance between the vertex of the second convex portion 412 and the first surface. Therefore, the depth H1 of the first hole body section is equal to the vertical distance between the vertex of the second convex portion 412 and the first surface. Figure 4 The depth H1 and width S of the second protrusion 412 are positively correlated and are both affected by the third etching (etching the third recess). Specifically, the greater the depth of the third etching, the smaller the depth H1 of the first hole body segment and the width S of the second protrusion 412. Conversely, the greater the depth H1 of the first hole body segment and the width S of the second protrusion 412. Furthermore, the depth H1 and width S directly affect the size of the shadow defect produced during vapor deposition. In other words, as the depth H1 and width S increase, the area of ​​the shadow defect produced during vapor deposition also increases.

[0087] In view of this, in the present disclosure, the depth H1 of the first hole body section is ≤ 1 μm, for example, the depth H1 can be 0.1 mm, 0.3 mm, 0.6 mm, 0.8 mm, etc. At this time, the aforementioned width S is also small enough. The FMM satisfying this setting can control the area of the shadow defect generated during evaporation to be very small.

[0088] In addition, it is also considered that the smaller the depth processing of the first hole body section is, the more difficult the control during processing is. Therefore, as a more preferred embodiment of the present disclosure, H1 is selected from 0.05 μm to 0.5 μm. Practice shows that the production yield of the FMM is improved within this range.

[0089] In an optional embodiment, the thickness H0 of the precision metal mask is 15 μm to 30 μm. Here, the thickness of the FMM is consistent with the preferred thickness of the sheet during the aforementioned manufacturing process, and therefore the selection of the thickness of the FMM in the present disclosure is not limited to this.

[0090] In addition, the second hole body section has an inclination angle β, and the third hole body section has an inclination angle γ, both β and γ are acute angles, and as a preferred embodiment of the present disclosure, β ≥ γ.

[0091] For example, as shown in FIG. 4, the second hole body section 411 has a second convex portion 412, and the third hole body section 413 has a third convex portion 413. Figure 4 An embodiment of the FMM of the present disclosure is shown in FIG. 4. As shown in FIG. 4, the FMM has a first hole body section 410, a second hole body section 411, and a third hole body section 413. Figure 4 As shown in FIG. 4, the inclination angle γ is the included angle between the line connecting the vertex of the second convex portion 412 and the vertex of the third convex portion 413 and the horizontal direction (the direction inside the lower surface of the FMM in the figure, i.e. the second surface, towards the opening 410), and the inclination angle β is the included angle between the line connecting the third convex portion 413 and the edge of the opening of the second hole body section and the aforementioned horizontal direction.

[0092] As shown in FIG. 4, the second hole body section 411 has a second convex portion 412, and the third hole body section 413 has a third convex portion 413. Figure 4 As shown in FIG. 4, the FMM has a first hole body section 410, a second hole body section 411, and a third hole body section 413. Figure 4 As shown in FIG. 4, the FMM has a first hole body section 410, a second hole body section 411, and a third hole body section 413.

[0093] In addition, the line connecting the second convex portion 412 and the edge of the opening of the second hole body section has an inclination angle θ, as shown in FIG. 4. Figure 4As shown, the inclination angle θ is the included angle between the line connecting the second convex portion 412 and the mouth edge of the second hole body section and the aforementioned horizontal direction. In order to further reduce the obstruction to the evaporation material and improve the utilization rate of the evaporation material, as a preferred embodiment of the present disclosure, the aforementioned inclination angle θ satisfies: 45°≤θ≤55°. For example, the inclination angle θ is 47°, 49°, 50°, 52°, or 54°, etc. In addition Figure 4 In the special example shown, the vertex of the second convex portion 412, the vertex of the third convex portion 413, and the mouth edge of the second hole body section are shown as collinear in the figure, at which point β=γ=θ. When not collinear, β>θ>γ.

[0094] In addition, the present disclosure also provides a mask device comprising the precision metal mask described in the foregoing embodiments. In addition to the precision metal mask contained, the structure, parameters, and other technical features of the mask device described above are derived from the prior art, and can be set by the person skilled in the art according to actual needs. Due to the limited space, the present disclosure will not be described here.

[0095] The above is only a specific implementation of the embodiments of the present disclosure, but the protection scope of the embodiments of the present disclosure is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the embodiments of the present disclosure, which should be covered within the protection scope of the embodiments of the present disclosure. Therefore, the protection scope of the embodiments of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A method for manufacturing a precision metal mask, comprising: Select raw material sheets; Processing at least one pattern area for vapor deposition on the raw material sheet, wherein the pattern area has a plurality of vertically penetrating openings; It is characterized by: The processing method of the pattern area includes the following steps: Using etching solution A, a plurality of first concave portions and a plurality of second concave portions corresponding to the first concave portions are etched on the first surface and the second surface of the raw material sheet respectively, wherein the second concave portions and the first concave portions are connected to each other, and a first convex portion is formed at the junction of the second concave portions and the first concave portions; The etching solution A is combined with at least one auxiliary gas B having no etching effect to prepare a water vapor two-fluid, wherein the volume flow ratio of the etching solution A to the auxiliary gas B is selected from 1:4 to 4:1; Using the water vapor two fluids, etching the first convex portion from the side where the second concave portion is located to remove the first convex portion and form a third concave portion; The first recess, the second recess and the third recess respectively form a first hole segment, a second hole segment and a third hole segment in the opening; The depth of the first hole segment is H1, the depth of the second hole segment is H2, and the depth of the third hole segment is H3, and they satisfy: H2≥H3>H1, H1 approaches 0 but is not 0, and H1≤1μm. The second hole body section has an inclination angle β, and the third hole body section has an inclination angle γ, β and γ are both acute angles, and β ≥ γ, A second convex portion is formed at the junction of the first hole body segment and the third hole body segment. The connecting line between the second convex portion and the edge of the mouth of the second hole body segment has an inclination angle θ, 45°≤θ≤55°.

2. The method for manufacturing a precision metal mask according to claim 1, wherein: The etching of the first recessed portion is performed simultaneously with the etching of the second recessed portion, or the etching of the first recessed portion is performed before the etching of the second recessed portion, or the etching of the second recessed portion is performed before the etching of the first recessed portion.

3. The method for manufacturing a precision metal mask according to claim 1, wherein: The etching solution A and the auxiliary gas B are mixed through a two-fluid nozzle; The etching solution A and the auxiliary gas B are supplied to the two-fluid nozzle at respective preset volume flow rates, and the ratio of the volume flow rates of the etching solution A and the auxiliary gas B is controlled to adjust the etching speed.

4. A precision metal mask produced by the production method according to any one of claims 1 to 3.

5. The precision metal mask according to claim 4, characterized in that: The depth H1 of the first hole segment satisfies: 0.05 μm≤H1≤0.5 μm.

6. The precision metal mask according to claim 4, characterized in that: The thickness H0 of the precision metal mask is 15 μm to 30 μm; The material of the precision metal mask is selected from one of Invar36, Super-Invar32, SUS304, and SUS420.

7. A mask device, characterized in that: A precision metal mask comprising any one of claims 4 to 6.

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