A single crystal silicon growth furnace based on silicon rod transfer protection device

Abstract

The present application discloses a single crystal silicon growth furnace based on a silicon rod transfer protection device, including a bottom base, a lower furnace body, an upper furnace body, a furnace cover, a connecting chamber and a transfer furnace body, a lifting unit is installed on the top of the transfer furnace body, a clamp unit is provided in the transfer furnace body, a first rotation drive unit is installed at the bottom base, a first hydraulic lifting unit is installed at the first rotation drive unit, a vertical rod unit is fixedly connected to the top of the first hydraulic lifting unit, and the vertical rod unit is fixedly connected to the transfer furnace body through a first connecting frame; a transfer protection device is installed at the transfer furnace body. The single crystal silicon growth furnace of the present application can realize the gradual lifting, transfer and lowering process of the silicon rod by using the cooperation of the clamp, the lifting unit, the hydraulic lifting unit and the transfer protection device, and can ensure that the silicon rod is well supported and protected during the transfer process through the ranging of the laser ranging unit and the support of the pallet, thereby reducing the possibility of damage to the silicon rod.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal silicon, and more specifically to a single crystal silicon growth furnace based on a silicon rod transfer protection device. Background Art

[0002] Single crystal silicon is a high-purity silicon material that is widely used in the semiconductor industry. A single crystal silicon growth furnace is a device used to prepare single crystal silicon materials. In the process of preparing single crystal silicon, seed crystals need to be used to promote the growth of silicon rods. The growth cycle is long, the energy consumption is large, and the growth process has high requirements for temperature and gas environment. Therefore, the production of a silicon rod costs a lot. After the silicon rod is grown, it needs to be taken out, transferred and subjected to subsequent machining operations.

[0003] In the existing single crystal silicon growth furnace, there is a risk of damage to the silicon rod during the transfer of the silicon rod. Since the silicon rod is heavy and long, it is hoped that the silicon rod can be protected to a certain extent during the transfer of the silicon rod. Although some bottom supporting devices are used in the prior art to protect the silicon rod, some existing supporting devices are relatively simple, and since the silicon rod has to fall into the container containing the silicon rod during the transfer process, it is also a problem that needs to be considered if the above supporting devices are removed. Summary of the invention

[0004] The present invention aims to overcome the defects of the prior art and provides a single crystal silicon growth furnace based on a silicon rod transfer protection device.

[0005] In order to achieve the above-mentioned purpose, the present invention provides the following technical solutions: a single crystal silicon growth furnace, comprising a bottom base, a lower furnace body installed at the bottom base, an upper furnace body located above the lower furnace body, a furnace cover located above the upper furnace body, a connecting chamber located above the furnace cover and a transfer furnace body located above the connecting chamber, a lifting unit is installed on the top of the transfer furnace body, a clamp unit that can be lifted by the lifting unit is provided in the transfer furnace body, a first rotation drive unit is installed at the bottom base, a first hydraulic lifting unit is installed at the first rotation drive unit, a vertical rod unit is fixedly connected to the top end of the first hydraulic lifting unit, and the vertical rod unit is fixedly connected to the transfer furnace body through a first connecting frame; a quartz crucible is installed in the lower furnace body; a transfer protection device is installed at the transfer furnace body, and the transfer protection device includes a support plate that can support the silicon rod from the bottom.

[0006] Furthermore, the top end of the first hydraulic lifting unit and the bottom end of the vertical rod unit are connected via a connecting block.

[0007] Thereby, the connection between the first hydraulic lifting unit and the vertical rod unit can be made more stable.

[0008] Furthermore, the first rotation driving unit is a motor unit or a rotation hydraulic cylinder.

[0009] Furthermore, it also includes an argon gas supply unit, a heating unit for heating the quartz crucible, a quartz crucible driving unit for driving the quartz crucible to rotate, and a temperature detection unit.

[0010] The argon supply unit, the heating unit, the quartz crucible driving unit and the temperature detection unit can adopt the technologies in the prior art. The main difference of the present application lies in the improvement of the transfer protection device.

[0011] In some embodiments, the lower furnace body, the upper furnace body, the furnace cover and the side walls of the transfer furnace body are all provided with water cooling pipes.

[0012] Thereby cooling the furnace wall.

[0013] Furthermore, the connecting chamber is provided with an observation window; the bottom base is provided with a second hydraulic lifting unit, and the second hydraulic lifting unit is fixedly connected to the upper furnace body through a second connecting frame; the furnace cover and the upper furnace body can be fixedly connected by fixing bolts; the furnace cover and the connecting chamber can be fixedly connected by fixing bolts; the bottom of the transfer furnace body is provided with a flange unit, and the top of the connecting chamber is provided with a flange groove capable of accommodating the flange unit, and the flange unit and the flange groove can be fixedly connected by fixing bolts.

[0014] Thus, the upper furnace body can be lifted and lowered by the second hydraulic lifting unit.

[0015] And after the furnace cover, the connecting chamber and the transfer furnace body are fixedly connected, the furnace cover can be lifted and lowered by the first hydraulic lifting unit.

[0016] Furthermore, the transfer protection device includes a fixed plate fixedly connected to the outer wall of the transfer furnace body, a first L-shaped plate fixedly connected to the fixed plate, a second rotation driving unit installed at the first L-shaped plate, a rotating rod driven to rotate by the second rotation driving unit and installed at the fixed plate, a rotating plate fixedly connected to the bottom end of the rotating rod, a second L-shaped plate fixedly connected to the rotating plate, a driving motor installed at the second L-shaped plate, a screw driven by the driving motor, a guide rod fixed to the second L-shaped plate, a movable plate driven by the screw, a first limit block fixedly connected to the rotating plate and a second limit block fixedly connected to the supporting plate, the rotating plate and the supporting plate are hinged, the first limit block has a first through groove into which the movable plate can be inserted, the second limit block has a second through groove into which the movable plate can be inserted, the movable plate has a threaded channel cooperating with the screw and a guide hole cooperating with the guide rod, the end of the movable plate is in the shape of an arc, and the second limit block has an abutting inclined surface that can abut the end of the movable plate.

[0017] In some embodiments, the rotating plate and the supporting plate are hinged by an elastic reset hinge component, and when there is no external force, the rotating plate is perpendicular to the supporting plate.

[0018] Thereby, when the movable plate moves backward, the supporting plate can be rotated downward better.

[0019] Furthermore, the second rotation driving unit is a motor unit.

[0020] Furthermore, the rotating rod and the fixed plate are connected via a bearing.

[0021] In other embodiments, the rotating rod has an annular slide rail, and the fixed plate has an annular slide groove that cooperates with the annular slide rail.

[0022] Furthermore, the support plate has a through hole portion, a supporting portion is installed on the through hole portion, and a plurality of limiting portions for limiting the supporting portion are also installed on the support plate, the supporting portion includes a lower annular portion inserted into the through hole portion and an upper annular portion fixedly connected to the lower annular portion and abutting against the upper surface of the support plate, the limiting portion includes a first horizontal plate fixedly connected to the support plate, a connecting vertical plate fixedly connected to the first horizontal plate, and a second horizontal plate fixedly connected to the connecting vertical plate.

[0023] Furthermore, the end of the rotating plate has a first inclined surface, the end of the supporting plate has a second inclined surface, and the hinge unit of the rotating plate and the supporting plate is located at the bottom ends of the first inclined surface and the second inclined surface.

[0024] Therefore, when the support plate rotates downward to avoid the downward movement of the silicon rod, it can achieve better downward rotation.

[0025] Furthermore, a third L-shaped plate is fixedly connected to the movable plate, and the third L-shaped plate includes a horizontal portion and a vertical portion, the horizontal portion is hingedly connected to a mounting plate by an elastic reset hinge component, and a laser ranging unit is installed at the mounting plate; the bottom end of the second limit block is arc-shaped; the transfer protection device can be in an idle state, a supporting state and an avoidance state, and in the idle state, the length direction of the rotating plate is perpendicular to the length direction of the fixed plate, and the mounting plate is parallel to the support plate; in the supporting state, the length direction of the rotating plate is parallel to the length direction of the fixed plate, the supporting portion is located below the transfer furnace body, and the mounting plate is parallel to the support plate; in the avoidance state, the length direction of the rotating plate is parallel to the length direction of the fixed plate, the rotating plate is perpendicular to the support plate, the end arc surface of the movable plate abuts the abutment slope, the bottom arc surface of the second limit block abuts the mounting plate, and the angle between the mounting plate and the horizontal portion of the third L-shaped plate is less than 90 degrees.

[0026] Furthermore, when there is no external force, the upper surface of the mounting plate is flush with the upper surface of the third L-shaped plate.

[0027] Furthermore, there are four limiting parts, which are distributed in a ring shape with equal intervals.

[0028] Furthermore, there are two guide rods and two guide holes.

[0029] Beneficial effects:

[0030] 1) The single crystal silicon growth furnace of the present application can realize the gradual lifting, transfer and lowering process of the silicon rod by using the cooperation of the clamp unit, the lifting unit, the hydraulic lifting unit and the transfer protection device.

[0031] 2) The single crystal silicon growth furnace of the present application can ensure that the silicon rods are stably supported and protected during the transfer process through the support of the pallet, reducing the possibility of damage to the silicon rods, and the support part can reduce the impact of vibration on the silicon rods during transfer. Through the distance measurement of the laser ranging unit, it can ensure that the pallet is in the correct position.

[0032] 3) In the single crystal silicon growth furnace of the present application, the end of the movable plate and the bottom end of the second limit block adopt an arc-shaped structure, thereby ensuring the stability and slowness of the support plate when rotating downward, avoiding damage to the silicon rod.

[0033] 4) In the single crystal silicon growth furnace of the present application, after the transfer of the silicon rods is completed, the transfer protection device can be reset, so that it is convenient to prepare for the next transfer process, thereby improving the efficiency and reliability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of single crystal silicon growth, at which time the transfer protection device is in an idle state;

[0035] Figure 2 It is a schematic diagram of the transfer furnace body rising;

[0036] Figure 3 It is a schematic diagram of the support plate rotating to the bottom of the transfer furnace body;

[0037] Figure 4 For Figure 3 Schematic diagram of silicon rod descent on the basis;

[0038] Figure 5 It is a schematic diagram of the transfer furnace body rotating under the driving of the first rotation driving unit;

[0039] Figure 6 The schematic diagram of the movable plate moving backward and the supporting plate descending;

[0040] Figure 7 This is an enlarged schematic diagram of area A;

[0041] Figure 8 It is a schematic diagram of the transfer protection device in the avoidance state;

[0042] Fig. 9 For Figure 8 Based on the schematic diagram of the lifting unit moving the silicon rod downward;

[0043] Fig.10 The schematic diagram shows that the movable plate moves forward and the support plate rotates upward;

[0044] Fig.11 This is a schematic diagram of resetting the transfer protection device.

[0045] Explanation of reference numerals: 1 bottom base; 1.1 first hydraulic lifting unit; 1.2 vertical rod unit; 1.3 first connecting frame; 1.4 second hydraulic lifting unit; 1.5 second connecting frame; 2 lower furnace body; 2.1 argon gas supply unit; 3 upper furnace body; 3.1 temperature detection unit; 4 furnace cover; 5 connecting chamber; 5.1 observation window; 6 transfer furnace body; 6.1 flange unit; 7 lifting unit; 8 silicon rod; 9 support plate; 9.1 limit part; 9.2 lower Annular portion; 9.3 upper annular portion; 10.1 fixed plate; 10.2 first L-shaped plate; 10.3 rotating rod; 10.4 rotating plate; 10.5 second L-shaped plate; 10.5.1 guide rod; 10.6 driving motor; 10.6.1 screw rod; 10.7 movable plate; 10.8 first limit block; 10.9 second limit block; 10.9.1 second through slot; 11 third L-shaped plate; 11.1 mounting plate; 11.2 laser ranging unit. DETAILED DESCRIPTION

[0046] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0047] The present invention provides Figure 1-11A single crystal silicon growth furnace based on a silicon rod transfer protection device is shown, comprising a bottom base 1, a lower furnace body 2 installed at the bottom base, an upper furnace body 3 located above the lower furnace body, a furnace cover 4 located above the upper furnace body, a connecting chamber 5 located above the furnace cover and a transfer furnace body 6 located above the connecting chamber, a lifting unit 7 is installed on the top of the transfer furnace body 6, and a clamp unit that can be lifted by the lifting unit 7 is provided in the transfer furnace body 6, a first rotation drive unit is installed at the bottom base 1, a first hydraulic lifting unit 1.1 is installed at the first rotation drive unit, a vertical rod unit 1.2 is fixedly connected to the top of the first hydraulic lifting unit 1.1, and the vertical rod unit 1.2 is fixedly connected to the transfer furnace body 6 through a first connecting frame 1.3; a quartz crucible is installed in the lower furnace body 2; a transfer protection device is installed at the transfer furnace body 6, and the transfer protection device includes a support plate 9 that can support the silicon rod 8 from the bottom.

[0048] The growth furnace also includes an argon supply unit 2.1, a heating unit for heating the quartz crucible, a quartz crucible driving unit for driving the quartz crucible to rotate, and a temperature detection unit 3.1; the connecting chamber 5 is provided with an observation window 5.1; the bottom base 1 is provided with a second hydraulic lifting unit 1.4, and the second hydraulic lifting unit 1.4 is fixedly connected to the upper furnace body 3 through a second connecting frame 1.5; the furnace cover 4 and the upper furnace body can be fixedly connected by fixing bolts; the furnace cover 4 and the connecting chamber 5 can be fixedly connected by fixing bolts; the bottom of the transfer furnace body 6 is provided with a flange unit 6.1, and the top of the connecting chamber 5 is provided with a flange groove capable of accommodating the flange unit 6.1, and the flange unit 6.1 and the flange groove can be fixedly connected by fixing bolts.

[0049] The transfer protection device comprises a fixed plate 10.1 fixedly connected to the outer side wall of the transfer furnace body 6, a first L-shaped plate 10.2 fixedly connected to the fixed plate 10.1, a second rotation driving unit installed at the first L-shaped plate 10.2, a rotating rod 10.3 driven to rotate by the second rotation driving unit and installed at the fixed plate 10.1, a rotating plate 10.4 fixedly connected to the bottom end of the rotating rod 10.3, a second L-shaped plate 10.5 fixedly connected to the rotating plate 10.4, and a driving unit installed at the second L-shaped plate 10.5. A driving motor 10.6, a screw rod 10.6.1 driven by the driving motor 10.6, a guide rod 10.5.1 fixed at the second L-shaped plate 10.5, a movable plate 10.7 driven by the screw rod 10.6.1, a first limit block 10.8 fixedly connected to the rotating plate 10.4, and a second limit block 10.9 fixedly connected to the supporting plate 9, wherein the rotating plate 10.4 and the supporting plate 9 are hinged, the first limit block 10.8 has a first through slot into which the movable plate 10.7 can be inserted, and the second limit block 10.9 has a A second through slot 10.9.1 capable of being inserted into the movable plate 10.7, the movable plate 10.7 having a threaded channel cooperating with the screw rod 10.6.1 and a guide hole cooperating with the guide rod 10.5.1, the end of the movable plate 10.7 is in an arc shape, and the second limit block 10.9 has an abutment slope capable of abutting the end of the movable plate 10.7; the support plate 9 has a through hole portion, the through hole portion is equipped with a support portion, and the support plate 9 is also equipped with a plurality of limit portions 9.1 for limiting the support portion, the support portion The part includes a lower annular portion 9.2 inserted into the through hole portion and an upper annular portion 9.3 fixedly connected to the lower annular portion 9.2 and abutting against the upper surface of the support plate 9, the limiting portion 9.1 includes a first horizontal plate fixedly connected to the support plate 9, a connecting vertical plate fixedly connected to the first horizontal plate, and a second horizontal plate fixedly connected to the connecting vertical plate; the end of the rotating plate 10.4 has a first inclined surface, the end of the support plate 9 has a second inclined surface, and the hinge unit of the rotating plate 10.4 and the support plate 9 is located at the bottom end of the first inclined surface and the second inclined surface.

[0050] The movable plate 10.7 is fixedly connected with a third L-shaped plate 11, and the third L-shaped plate 11 includes a horizontal part and a vertical part. The horizontal part is hinged with a mounting plate 11.1 through an elastic reset hinge component, and a laser distance measuring unit 11.2 is installed on the mounting plate 11.1; the bottom end of the second limit block 10.9 is in an arc shape; the transfer protection device can be in an idle state, a supporting state and an avoidance state. In the idle state, the length direction of the rotating plate 10.4 is perpendicular to the length direction of the fixed plate 10.1, and the mounting plate 11.1 is parallel to the supporting plate 9; in the supporting state, the length ... of the fixed plate 10.1, and the mounting plate 11.1 is parallel to the supporting plate 9; in the supporting state, the length of the rotating plate 10.4 is perpendicular to the length of the fixed plate 10.1, and the mounting plate 11.1 is parallel to the supporting plate 9. The length direction is parallel to the length direction of the fixed plate 10.1, the supporting portion is located below the transfer furnace body 6, and the mounting plate 11.1 is parallel to the support plate 9; in the avoidance state, the length direction of the rotating plate 10.4 is parallel to the length direction of the fixed plate 10.1, the rotating plate 10.4 is perpendicular to the support plate 9, the end arc surface of the movable plate 10.7 abuts against the abutting inclined surface, the bottom arc surface of the second limit block 10.9 abuts against the mounting plate 11.1, and the angle between the mounting plate 11.1 and the horizontal part of the third L-shaped plate 11 is less than 90 degrees; there are 4 limit portions 9.1, which are distributed in a circular shape with equal spacing.

[0051] Working principle: The single crystal silicon growth furnace of this application is as follows: Figure 1 As shown, it can be used to grow single crystal silicon, and the single crystal silicon rod is lifted upward by lifting the seed crystal (the clamp is used to clamp the seed crystal, and the lifting unit is used to lift the clamp). Figure 2 As shown in FIG. 1 , the first hydraulic lifting unit rises, thereby causing the transfer furnace to rise. Figure 3 As shown, the transfer protection device rotates to the bottom of the transfer furnace body (at this time, the laser distance measuring unit measures the distance. When the distance measuring value is within the threshold range, it means that the support plate is indeed located below the silicon rod, and the optical signal of the laser distance measuring unit passes through the through hole and hits the bottom of the silicon rod). Figure 4 As shown in FIG. 1 , the lifting unit lowers the silicon rod so that the bottom of the silicon rod is supported by the support portion. Figure 5 As shown, under the drive of the first rotation drive unit, the transfer furnace body rotates outward (because the support plate supports the silicon rod from the bottom, the transfer of the silicon rod is safer and the silicon rod is not easily damaged). Figure 6 , 7 As shown in FIG. 8 , the movable plate moves backward, so that the support plate rotates downward under the action of the support plate's gravity, thereby not restricting the downward movement of the silicon rods. Fig. 9 As shown, the lifting device moves the silicon rod downward, and there is a device for receiving the silicon rod below the silicon rod (not shown in the figure, the device adopts the silicon rod receiving equipment commonly used in the prior art). Fig.10 , 11As shown, the transfer protection device can be reset, so that the above-mentioned use process can be repeated next time. Since the end of the movable plate and the bottom end of the second limit block adopt an arc-shaped structure, when the support plate rotates downward, the rotation process can be stable and slow, thereby avoiding damage to the silicon rod. And when the movable plate moves toward the support plate, the support plate and the mounting plate can also be reset at the same time without excessive manual intervention.

[0052] Although the present invention has been illustrated and described with respect to the preferred embodiments, it will be appreciated by those skilled in the art that various changes and modifications may be made to the present invention without departing from the scope of the present invention as defined by the claims.

Claims

1. A single crystal silicon growth furnace based on a silicon rod transfer protection device, characterized in that: The invention comprises a bottom base, a lower furnace body installed at the bottom base, an upper furnace body located above the lower furnace body, a furnace cover located above the upper furnace body, a connecting chamber located above the furnace cover and a transfer furnace body located above the connecting chamber, a lifting unit is installed on the top of the transfer furnace body, a clamp unit which can be lifted by the lifting unit is provided in the transfer furnace body, a first rotating drive unit is installed at the bottom base, a first hydraulic lifting unit is installed at the first rotating drive unit, a vertical rod unit is fixedly connected to the top end of the first hydraulic lifting unit, and the vertical rod unit is fixedly connected to the transfer furnace body through a first connecting frame; a quartz crucible is installed in the lower furnace body; a transfer protection device is installed at the transfer furnace body, and the transfer protection device includes a device which can be lifted from the bottom A support plate for holding silicon rods; an observation window is provided at the connecting chamber; a second hydraulic lifting unit is provided at the bottom base, and the second hydraulic lifting unit is fixedly connected to the upper furnace body through a second connecting frame; the furnace cover and the upper furnace body can be fixedly connected by fixing bolts; the furnace cover and the connecting chamber can be fixedly connected by fixing bolts; the bottom of the transfer furnace body has a flange unit, the top of the connecting chamber has a flange groove that can accommodate the flange unit, and the flange unit and the flange groove can be fixedly connected by fixing bolts; the transfer protection device includes a fixing plate fixedly connected to the outer wall of the transfer furnace body, a first L-shaped plate fixedly connected to the fixing plate, a second rotation drive unit installed at the first L-shaped plate, A rotating rod driven to rotate by a second rotating drive unit and installed on the fixed plate, a rotating plate fixedly connected to the bottom end of the rotating rod, a second L-shaped plate fixedly connected to the rotating plate, a driving motor installed on the second L-shaped plate, a screw driven by the driving motor, a guide rod fixed to the second L-shaped plate, a movable plate driven by the screw, a first limit block fixedly connected to the rotating plate and a second limit block fixedly connected to the supporting plate, the rotating plate and the supporting plate are hinged, the first limit block has a first through groove into which the movable plate can be inserted, the second limit block has a second through groove into which the movable plate can be inserted, the movable plate has a threaded channel cooperating with the screw and a guide hole cooperating with the guide rod, the end of the movable plate is in the shape of an arc surface, and the second limit block has a The abutting inclined surface at the end of the movable plate; the support plate has a through hole portion, a supporting portion is installed at the through hole portion, and a plurality of limiting portions for limiting the supporting portion are also installed at the support plate, the supporting portion includes a lower annular portion inserted into the through hole portion and an upper annular portion fixedly connected to the lower annular portion and abutting against the upper surface of the support plate, the limiting portion includes a first horizontal plate fixedly connected to the support plate, a connecting vertical plate fixedly connected to the first horizontal plate, and a second horizontal plate fixedly connected to the connecting vertical plate; a third L-shaped plate is fixedly connected to the movable plate, the third L-shaped plate includes a horizontal portion and a vertical portion, the horizontal portion is hinged to a mounting plate by an elastic reset hinge component, and a laser ranging unit is installed at the mounting plate; the bottom end of the second limiting block is in an arc shape;The transfer protection device can be in an idle state, a supporting state and an avoidance state. In the idle state, the length direction of the rotating plate is perpendicular to the length direction of the fixed plate, and the mounting plate is parallel to the supporting plate; in the supporting state, the length direction of the rotating plate is parallel to the length direction of the fixed plate, the supporting portion is located below the transfer furnace body, and the mounting plate is parallel to the supporting plate; in the avoidance state, the length direction of the rotating plate is parallel to the length direction of the fixed plate, the rotating plate is perpendicular to the supporting plate, the end arc surface of the movable plate abuts the abutment slope, the bottom arc surface of the second limit block abuts the mounting plate, and the angle between the mounting plate and the horizontal part of the third L-shaped plate is less than 90 degrees. ; 2. The single crystal silicon growth furnace based on the silicon rod transfer protection device according to claim 1, characterized in that: The invention also includes an argon gas supply unit, a heating unit for heating the quartz crucible, a quartz crucible driving unit for driving the quartz crucible to rotate, and a temperature detection unit.

3. The single crystal silicon growth furnace based on the silicon rod transfer protection device according to claim 1, characterized in that: The end of the rotating plate has a first inclined surface, the end of the supporting plate has a second inclined surface, and the hinge unit of the rotating plate and the supporting plate is located at the bottom ends of the first inclined surface and the second inclined surface.

4. The single crystal silicon growth furnace based on the silicon rod transfer protection device according to claim 1, characterized in that: There are four limiting parts, which are distributed in a ring shape with equal intervals.

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