Method for manufacturing porous medium plate, plasma device, and wastewater treatment apparatus

Abstract

The application relates to the technical field of wastewater treatment, in particular to a preparation method of a porous medium plate, a plasma device and a wastewater treatment equipment. The application dips an aluminum oxide plate into a first sol containing silicon dioxide to obtain an aluminum oxide plate loaded with a silicon dioxide coating. The silicon dioxide coating has a large specific surface area and hydroxyl groups exist on the coating surface, the hydroxyl groups can be combined with or adsorbed by low-lifetime active substances, the retention time of the low-lifetime active substances is prolonged, and the concentration and utilization rate of the low-lifetime active substances are improved. Due to the existence of the hydroxyl groups and the large specific surface area of the silicon dioxide coating, the silicon dioxide coating has strong adsorption capacity, so that the active substances adsorbed on the surface of the medium plate are increased, and then the reaction rate of the active substances and perfluorinated compounds is improved, so that the perfluorinated compounds are more completely degraded. The silicon dioxide has good dielectric properties, can enhance the dielectric constant and resistivity of the medium plate, and plays a positive role in the generation and transmission of the plasma.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wastewater treatment, and particularly relates to a preparation method of a porous medium plate, a plasma device and a wastewater treatment equipment. BACKGROUND

[0002] Perfluorinated compounds (PFCs) and polyfluorinated compounds (PFASs) are a kind of persistent organic pollutants that have attracted much attention in recent years. These fluorine-containing wastewater must be properly treated before being discharged, otherwise it will cause great harm to the natural environment and human health. In particular, perfluorinated compounds have serious toxic effects on the human body, which can damage the endocrine system, immune system, liver, nervous system, etc.

[0003] At present, the main method for effectively removing perfluorinated compounds is plasma method, especially DBD (dielectric barrier discharge) which can produce higher concentration of plasma at atmospheric pressure. A large amount of active substances, such as a large number of free radicals and quasi-molecules, are generated in the plasma during the discharge process, which can degrade perfluorinated compounds. However, there are still some limitations in the degradation of perfluorinated compounds in wastewater by DBD technology, for example, the utilization rate of active substances generated by DBD is not high, resulting in low degradation efficiency of perfluorinated compounds. SUMMARY

[0004] The embodiments of the present application mainly provide a preparation method of a porous medium plate, a plasma device and a wastewater treatment equipment to improve the problem of low degradation efficiency of perfluorinated compounds in wastewater.

[0005] In a first aspect, the embodiments of the present application provide a preparation method of a porous medium plate, comprising: uniformly mixing tetraethoxysilane, water, ethanol and ammonia gas to form an alkali sol; uniformly mixing tetraethoxysilane, water, ethanol and hydrogen chloride to form an acid sol, mixing the acid sol with the alkali sol to obtain a first sol having silicon dioxide; providing an alumina plate, immersing the alumina plate in the first sol having silicon dioxide to obtain an alumina plate loaded with a silicon dioxide coating; placing the alumina plate loaded with the silicon dioxide coating under a laser, wherein the laser is used to form pores through the alumina plate loaded with the silicon dioxide coating to obtain a porous medium plate.

[0006] In some embodiments, the mixing the tetraethoxysilane, water, ethanol and ammonia uniformly to form the base sol includes: mixing the tetraethoxysilane, water, ethanol and ammonia uniformly at a temperature of 20-25°C in a molar ratio of (0.05-2):(1-5):(20-50):(0.02-0.08), storing in the dark for 5-15 days, and then reacting at a temperature of 70-80°C for 1-3 hours to form the base sol; and the mixing the tetraethoxysilane, water, ethanol and hydrogen chloride uniformly to form the acid sol includes: mixing the tetraethoxysilane, water, ethanol and hydrogen chloride uniformly at a temperature of 20-25°C in a molar ratio of (0.05-2):(1-5):(20-50):(0.02-0.08) to form the acid sol.

[0007] In some embodiments, the immersing the alumina plate in the first sol with silica to obtain an alumina plate loaded with a silica coating includes: immersing the alumina plate in the first sol with silica, and then drying the immersed alumina plate in an oven at a temperature of 60-80°C for 30-60 minutes to obtain the alumina plate loaded with the silica coating; and before the placing the alumina plate loaded with the silica coating under the laser, the preparation method further includes: sintering the alumina plate loaded with the silica coating at a sintering temperature of 400-450°C for a sintering time of 30-60 minutes.

[0008] In a second aspect, the embodiments of the present application provide a plasma device including the porous medium plate prepared by the method for preparing a porous medium plate according to any one of the first aspect; the plasma device further includes a high-voltage electrode and a low-voltage electrode, the porous medium plate has oppositely arranged first and second surfaces, the first surface is connected with the high-voltage electrode, and the second surface is connected with the low-voltage electrode; the first surface includes a plasma region; the porous medium plate is provided with a pore passing through the first and second surfaces, and the pore is used for gasifying a plasma bubble in the plasma region.

[0009] In a third aspect, the embodiments of the present application provide a wastewater treatment equipment including: a first plasma reaction part and an irradiation reaction part, the first plasma reaction part including the plasma device according to the second aspect; the irradiation reaction part including an electron beam irradiation device and an irradiation reaction device, the irradiation reaction device being arranged in an irradiation region of the electron beam irradiation device; the first plasma reaction part further including a first channel, one end of the first channel being in communication with the plasma device of the first plasma reaction part, and the other end of the first channel being in communication with the irradiation reaction device.

[0010] In some embodiments, the first plasma reaction portion further comprises a first air inlet and a first fan, the first fan is arranged at the first air inlet, and the first air inlet is in communication with the plasma device of the first plasma reaction portion.

[0011] In some embodiments, the wastewater treatment device further comprises a second plasma reaction portion; the second plasma reaction portion comprises the plasma device according to the second aspect; the irradiation reaction portion further comprises a second channel, one end of the second channel is in communication with the irradiation reaction device, and the other end is in communication with the plasma device of the second plasma reaction portion; the second plasma reaction portion further comprises a third channel, one end of the third channel is in communication with the plasma device of the second plasma reaction portion, and the other end is in communication with the irradiation reaction device.

[0012] In some embodiments, the irradiation reaction device comprises a baffle plate, the baffle plate divides the irradiation reaction device into a first irradiation reaction zone and a second irradiation reaction zone, one end of the first channel is in communication with the plasma device of the first plasma reaction portion, and the other end is in communication with the first irradiation reaction zone; one end of the third channel is in communication with the plasma device of the second plasma reaction portion, and the other end is in communication with the second irradiation reaction zone.

[0013] In some embodiments, the second plasma reaction portion further comprises a second air inlet and a second fan, the second fan is arranged at the second air inlet, and the second air inlet is in communication with the plasma device of the second plasma reaction portion.

[0014] In some embodiments, along the first direction, the irradiation reaction portion further comprises a plurality of irradiation reaction devices arranged in an array; the irradiation reaction portion further comprises a sliding rail, the sliding rail is arranged along the first direction, and the electron beam irradiation device is in sliding connection with the sliding rail.

[0015] Different from the related art, the application provides a preparation method of a porous medium plate, a plasma device and a wastewater treatment equipment. In the preparation method of the porous medium plate, the alumina plate is immersed in a first sol containing silicon dioxide to obtain an alumina plate loaded with a silicon dioxide coating. The silicon dioxide coating has a large specific surface area and hydroxyl groups exist on the surface of the coating, the hydroxyl groups can be combined or adsorbed with low-lifetime active substances, the retention time of the low-lifetime active substances is enhanced, and the concentration and utilization rate of the low-lifetime active substances are improved. Due to the existence of the hydroxyl groups of the silicon dioxide coating and the large specific surface area, the silicon dioxide coating has strong adsorption capacity, so that the active substances adsorbed on the surface of the medium plate increase, and then the contact between the active substances and the perfluorinated compounds is improved, the reaction is promoted to occur, the reaction rate is enhanced, and the perfluorinated compounds are more completely degraded. The silicon dioxide also has good dielectric properties, which can enhance the dielectric constant and resistivity of the medium plate and play a positive role in the generation and transmission of the plasma. The porous medium plate also has a pore channel penetrating through the alumina plate. During the wastewater treatment, the wastewater treatment equipment enters air, the air is dispersed into the water through the porous structure to form bubbles, so that the plasma is bubbled on the surface of the porous medium plate, the bubbled plasma can be dispersed in the wastewater, the mass transfer speed of the plasma phase in the liquid phase is accelerated, the contact between the perfluorinated compounds and the active substances such as free radicals and ozone in the wastewater is increased, and the degradation of the perfluorinated compounds is accelerated. BRIEF DESCRIPTION OF DRAWINGS

[0016] One or more embodiments are illustrated by way of example with reference to the accompanying drawings, which are schematic and not intended to be limiting of the embodiments, and in which like reference numerals designate similar items in the figures, in which:

[0017] Figure 1 is a flow chart of a preparation method of a porous medium plate provided by an embodiment of the application;

[0018] Figure 2 is a structural schematic diagram of some plasma devices provided by an embodiment of the application;

[0019] Figure 3 is a structural schematic diagram of some plasma devices provided by an embodiment of the application;

[0020] Figure 4 is a structural schematic diagram of some wastewater treatment equipment provided by an embodiment of the application;

[0021] Figure 5 is a structural schematic diagram of some wastewater treatment equipment provided by an embodiment of the application.

[0022] Reference Signs:

[0023] 1000, wastewater treatment device;

[0024] 100, first plasma reaction part; 101, first channel; 102, first air inlet; 103, first fan; 104, first flow pressure controller; 105, first water inlet; 106, first air outlet; 107, first water outlet; 108, first high voltage probe; 109, first current probe; 110, first oscilloscope;

[0025] 10, plasma device; 11, porous medium plate; 111, alumina plate; 112, silica coating; 113, first surface; 1131, plasma region; 114, second surface; 115, pore; 12, high voltage electrode; 13, low voltage electrode;

[0026] 20, high voltage power supply; 20a, first high voltage power supply; 201a, first high voltage input point; 20b, second high voltage power supply; 201b, second high voltage input point;

[0027] 30, ground power supply; 301a, first low voltage input point; 301b, second low voltage input point;

[0028] 200, irradiation reaction part; 201, electron beam irradiation device; 202, irradiation reaction device; 2021, first irradiation reaction zone; 2022, second irradiation reaction zone; 203, second channel; 204, baffle; 205, second water inlet; 206, second water outlet; 207, high frequency high voltage power supply; 208, second flow pressure controller; 209, fourth water inlet; 210, fourth water outlet;

[0029] 300, second plasma reaction part; 301, third channel; 302, second air inlet; 303, second fan; 304, third water inlet; 305, second air outlet; 306, second high voltage probe; 307, second current probe; 308, third water outlet; 309, third flow pressure controller; 310, second oscilloscope;

[0030] X, first direction. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and examples. It should be understood that the specific examples described herein are only used to explain the present application, and are not used to limit the present application.

[0032] In the description of the embodiments of the present application, the technical terms "first", "second" and the like are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "several" is more than one, unless otherwise explicitly specified.

[0033] Unless otherwise defined, all technical and scientific terms used in the present specification have the same meaning as commonly understood by one of ordinary skill in the art to which the present application belongs. The terms used in the specification of the present application are only for the purpose of describing the specific embodiments and are not used to limit the present application. The term "and / or" used in the present specification includes any and all combinations of one or more related listed items.

[0034] Reference herein to "embodiments" means that a particular feature, structure, or characteristic described in connection with an embodiment can be included in at least one embodiment of the present application. The appearance of the phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily independent or alternative embodiments to each other. In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as there is no conflict between them.

[0035] Perfluorinated compounds are a class of fluorine-containing compounds in which all hydrogen atoms are replaced by fluorine atoms. Perfluorinated compounds generally have high stability and hydrophobicity, and are widely used in various fields, such as manufacturing water-repellent, oil-repellent, fireproof textiles, and as etchants, cleaning agents in semiconductor manufacturing processes. Due to the stability and persistence of their chemical properties, perfluorinated compounds can accumulate in the environment and pose a great danger to ecosystems and human health.

[0036] Dielectric barrier discharge (DBD) is a common discharge method that can generate non-thermal equilibrium low-temperature plasma in an open atmospheric pressure environment. Due to the presence of an insulating medium plate in its discharge structure, it can effectively suppress the generation of local sparks or arcs, thereby generating large-area, high-energy-density low-temperature non-equilibrium plasma. Plasma generates a variety of free radicals and other active substances during the discharge process, such as hydroxyl radicals, oxygen radicals, hydrogen peroxide, ozone, etc. In wastewater treatment, these active substances generally have strong oxidizing properties and can rapidly undergo chain reactions with organic pollutants, non-selectively oxidizing or mineralizing harmful substances to generate salt substances, carbon dioxide and other non-secondary pollution substances. In particular, for highly stable perfluorinated compounds, under the action of free radicals and other active substances, a series of advanced oxidation reactions can be generated, allowing the perfluorinated compounds to be degraded.

[0037] Electron beam irradiation technology is a processing technology and process that uses electron rays accelerated in a high-voltage electric field to irradiate a substance, ionizes and excites molecules of various substances through the interaction of high-energy electrons with the substance, thereby inducing chemical, physical and biological effects. Some processes that cannot be handled by heat or light can be easily completed by electron beam irradiation, and the performance is very stable. Moreover, electron beams have high energy, high processing efficiency and fast reaction, and the residence time under the electron beam is about 0.01 seconds, and the irradiation treatment can be completed. Electrons can interact with matter. The electron acts on the object being processed to produce ionization or excitation, release orbital electrons, form free radicals, and change the original molecular structure. Free radicals or other activated groups can form new molecular forms, accompanied by the destruction of chemical bonds and the generation of new chemical reactions, organic matter decomposition or atomic dislocation, etc. Electron beams are generated by electron accelerators, which have no radioactive source and can be turned on or off instantly, reducing the hidden dangers of safety accidents, and can be operated at normal temperature and pressure, which is convenient and safe. Moreover, the technology itself does not need to add chemical reagents, and is green and pollution-free.

[0038] In a first aspect, the embodiments of the present application provide a preparation method of a porous medium plate, please refer to Figure 1 , Figure 1 is a flow chart of the preparation method of the porous medium plate provided by the embodiments of the present application, and the steps of the preparation method of the porous medium plate include:

[0039] Step S1: uniformly mixing tetraethoxysilane, water, ethanol and ammonia to form a base sol.

[0040] Tetraethoxysilane (TEOS), also known as tetraethyl orthosilicate, is an organic compound with the chemical formula C8H 20 O4Si, which is a colorless liquid, slightly soluble in water, slightly soluble in benzene, soluble in diethyl ether and ethanol, and mainly used as an electrical insulating material, paint, optical glass treatment agent, and also used for organic synthesis.

[0041] In some embodiments, uniformly mixing tetraethoxysilane, water, ethanol and ammonia to form a base sol includes: uniformly mixing tetraethoxysilane, water, ethanol and ammonia at a molar ratio of (0.05-2):(1-5):(20-50):(0.02-0.08) at a temperature of 20-25°C, storing in the dark for 5-15 days, and then reacting at a temperature of 70-80°C for 1-3 hours to form a base sol.

[0042] Step S2: uniformly mixing tetraethoxysilane, water, ethanol and hydrogen chloride to form an acid sol, and mixing the acid sol with the base sol to obtain a first sol containing silicon dioxide.

[0043] In some embodiments, the mixing the tetraethoxysilane, water, ethanol and hydrogen chloride uniformly to form the acid sol includes: mixing the tetraethoxysilane, water, ethanol and hydrogen chloride uniformly at a temperature of 20-25°C at a molar ratio of (0.05-2):(1-5):(20-50):(0.02-0.08) to form the acid sol.

[0044] In some embodiments, incubating the first sol with silica at a temperature of 70-80°C for 4-6h can fully exert the hydrogen chloride and ammonia gas in the first sol, reducing the reaction of hydrogen chloride and ammonia gas with silica under high temperature conditions, and destroying the structure of the silica coating.

[0045] Step S3: providing an alumina plate, and immersing the alumina plate in the first sol with silica to obtain an alumina plate loaded with a silica coating.

[0046] The alumina plate can be cleaned with distilled water and / or ethanol before use, and the alumina can be dried using an oven drying method to ensure the cleanliness of the alumina plate.

[0047] Specifically, the alumina plate is immersed in the first sol with silica, and the alumina plate is pulled up at a certain speed, so that the first sol can uniformly cover the surface of the alumina plate to form a uniform coating thickness. The pulling process can increase the contact area between the silica coating and the alumina plate, promote the adhesion between the silica coating and the alumina plate, and improve the bonding strength of the silica coating. Controlling the pulling speed and immersion time can control the thickness of the silica coating. Generally, the slower the pulling speed, the thicker the coating, and the faster the pulling speed, the thinner the coating.

[0048] The alumina plate is used as the material of the medium plate. Alumina has a high melting point and good high-temperature resistance, and can withstand high-temperature environments in the plasma device without deformation or damage. Alumina is also a good electrical insulator, which can effectively reduce the accumulation of electric charge and discharge in the plasma, and improve the safety and stability of the equipment. The alumina plate has good resistance to most chemical substances and is not easily corroded or oxidized, and can maintain stable performance in wastewater.

[0049] The silica coating has a large specific surface area and hydroxyl groups on the surface of the coating, which can be combined or adsorbed with low-lifetime active substances, thereby enhancing the retention time of the low-lifetime active substances and improving the concentration and utilization rate of the low-lifetime active substances. Due to the presence of hydroxyl groups and the large specific surface area of the silica coating, the silica coating has strong adsorption capacity, so that the active substances adsorbed on the surface of the porous medium plate increase, thereby increasing the reaction rate of the active substances and the perfluorinated compounds, and making the perfluorinated compounds more completely degraded. The silica also has good dielectric properties, which can enhance the dielectric constant and resistivity of the medium plate, and positively affect the generation and transmission of plasma.

[0050] In some embodiments, the alumina plate is immersed in the first sol with silica to obtain the alumina plate loaded with the silica coating, including: immersing the alumina plate in the first sol with silica, and then placing the immersed alumina plate in an oven at a temperature of 60-80°C for drying for 30-60 min to obtain the alumina plate loaded with the silica coating. In particular, if a silica coating with a specific thickness is needed, the alumina plate can be immersed in the first sol with silica again and then dried, and the above-mentioned immersion and drying operations are repeated multiple times to obtain a silica coating with a specific thickness.

[0051] Step S4: placing the alumina plate loaded with the silica coating under a laser to form holes through the alumina plate loaded with the silica coating, thereby obtaining a porous medium plate.

[0052] After being focused, the laser can heat the alumina plate loaded with the silica coating as a high-intensity heat source. The material in the laser-acting area will melt or vaporize, thereby forming hole structures with a diameter of 4-7 μm. These holes will be distributed on the alumina plate to form a porous medium plate.

[0053] The porous medium plate has holes through the alumina plate. In wastewater treatment, the wastewater treatment equipment will introduce air, which will be dispersed into water through the hole structures to form bubbles, thereby gasifying the plasma gathered on the surface of the porous medium plate. The gasified plasma can be dispersed in the wastewater, thereby accelerating the mass transfer rate of the plasma phase in the liquid phase, increasing the contact between the perfluorinated compounds and the active substances such as free radicals and ozone in the wastewater, and accelerating the degradation rate of the perfluorinated compounds.

[0054] The porous medium plate prepared in the present application is an alumina medium plate loaded with a silica coating. The porous medium plate can promote the occurrence of dielectric barrier discharge, realize dielectric barrier discharge at a lower voltage, and has high energy efficiency and treatment effect when treating fluorine-containing wastewater.

[0055] In some embodiments, before the alumina plate loaded with the silica coating is placed under the laser, the alumina plate loaded with the silica coating is sintered at a temperature of 400-450℃ for 30-60 minutes.

[0056] The embodiments of the present application provide a preparation method of a porous medium plate. An alumina plate is immersed in a first sol containing silica to obtain an alumina plate loaded with a silica coating. The silica coating has a large specific surface area and hydroxyl groups on the surface of the coating, which can be combined with or adsorbed by low-lifetime active substances, thereby prolonging the retention time of the low-lifetime active substances and improving the concentration and utilization rate of the low-lifetime active substances. Due to the presence of the hydroxyl groups and the large specific surface area of the silica coating, the silica coating has strong adsorption capacity, so that more active substances are adsorbed on the surface of the medium plate, thereby improving the contact between the active substances and the perfluorinated compounds, promoting the reaction, enhancing the reaction rate, and making the degradation of the perfluorinated compounds more complete. The silica also has good dielectric properties, which can enhance the dielectric constant and resistivity of the medium plate and positively affect the generation and transmission of plasma. The porous medium plate also has pores penetrating through the alumina plate. During wastewater treatment, air enters the wastewater treatment equipment, and the air is dispersed into the water to form bubbles through the porous structure, so that the plasma gathered on the surface of the porous medium plate is bubbled, and the bubbled plasma can be dispersed in the wastewater, so that the mass transfer rate of the plasma phase in the liquid phase is accelerated, the contact between the perfluorinated compounds and active substances such as free radicals and ozone in the wastewater is increased, and the degradation of the perfluorinated compounds is accelerated.

[0057] In the second aspect, the embodiments of the present application provide a plasma device 10, please refer to Figure 2 and Figure 3 The plasma device 10 comprises the porous medium plate 11 prepared by the preparation method of any one of the embodiments of the first aspect, and the porous medium plate 11 is a medium plate with a silica coating 112 on the outer surface of an alumina plate 111.

[0058] Please refer to Figure 2 and Figure 3The plasma device 10 also includes a high-voltage electrode 12 and a low-voltage electrode 13. The porous dielectric plate 11 has a first surface 113 and a second surface 114 disposed opposite to each other. The first surface 113 is connected to the high-voltage electrode 12, and the second surface 114 is connected to the low-voltage electrode 13. The end of the high-voltage electrode 12 facing away from the first surface 113 is connected to a high-voltage power supply 20, and the end of the low-voltage electrode 13 facing away from the second surface 114 is connected to a grounded power supply 30. The first surface 113 includes a plasma region 1131. The plasma region 1131 is formed because a high voltage is applied between the high-voltage electrode 12 and the low-voltage electrode 13, generating plasma on the first surface 113 where the high-voltage electrode 12 is connected to the porous dielectric plate 11. The region where plasma is generated is the plasma region 1131.

[0059] Plasma is formed because the high-voltage current released by the high-voltage power supply 20 reaches the high-voltage electrode 12 and is released to the porous dielectric plate 11, and the low-voltage current released by the ground power supply 30 reaches the low-voltage electrode 13 and is released to the porous dielectric plate 11, thus forming plasma in the plasma region 1131.

[0060] The porous dielectric plate 11 has channels 115 penetrating the first surface 113 and the second surface 114. The channels 115 are used to atomize the plasma in the plasma region 1131. During wastewater treatment, the wastewater treatment equipment 1000 introduces air. The air passes through the channels 115 and atomizes the plasma gathered on the surface of the porous dielectric plate 11. The atomized plasma can be dispersed in the wastewater, which accelerates the mass transfer rate of the plasma phase in the liquid phase, increases the contact between perfluorinated compounds and active substances such as free radicals and ozone in the wastewater, and accelerates the degradation rate of perfluorinated compounds.

[0061] The plasma device 10 in this embodiment is a device capable of generating and controlling plasma. The plasma device 10 utilizes a porous dielectric plate 11 to generate free radicals, shock waves, and electric fields, efficiently removing recalcitrant organic pollutants from wastewater without requiring a large input of chemical reagents. Furthermore, the high-energy electrons generated by the plasma device 10 collide with water to produce a large amount of active substances, such as ozone and free radicals, which can effectively remove perfluorinated compounds. The plasma device utilizes the porous dielectric plate 11 for dielectric barrier discharge. The large discharge area of ​​the porous dielectric plate 11 expands the spatial distribution of the plasma, resulting in a uniform and stable discharge effect and increasing the yield of active substances.

[0062] Thirdly, this application provides a wastewater treatment device 1000, please refer to... Figure 2 and Figure 4The wastewater treatment device 1000 includes a first plasma reaction part 100 and an irradiation reaction part 200. The first plasma reaction part 100 includes the plasma device 10 of the second aspect. The irradiation reaction part 200 includes an electron beam irradiation device 201 and an irradiation reaction device 202 arranged in an irradiation area of the electron beam irradiation device 201. The first plasma reaction part 100 further includes a first channel 101, one end of which is in communication with the plasma device 10 of the first plasma reaction part 100, and the other end of which is in communication with the irradiation reaction device 202.

[0063] The electron beam irradiation device 201 refers to a device that uses a high-energy electron beam generated by an electron accelerator to irradiate some substances to produce physical, chemical, and biological effects. The electron beam has high energy, high processing efficiency, and fast reaction. The residence time under the electron beam is about 0.01 seconds, and the irradiation treatment can be completed. The electron accelerator does not have a radioactive source and can be turned off or on instantly, reducing the hidden danger of safety accidents. It can be operated at normal temperature and pressure, which is convenient and safe. Moreover, the technology itself does not need to add additional chemical reagents, and is green and does not cause secondary pollution.

[0064] The irradiation reaction device 202 refers to a device that uses the electron beam irradiation emitted by the electron beam irradiation device 201 to perform various chemical, physical, or biological reactions.

[0065] The wastewater treatment device 1000 in the embodiments of the present application uses a combination of the first plasma reaction part 100 and the irradiation reaction part 200 to treat wastewater. The plasma device 10 in the first plasma reaction part 100 can generate active substances such as ozone. The ozone can convert the reducing primary particles generated by the electron beam irradiation device 201 into oxidizing hydroxyl groups, thereby significantly improving the oxidation degradation efficiency of perfluorinated compounds. Moreover, part of the reduced active substances are converted into active substances again through electron beam irradiation and continue to participate in the oxidation degradation of perfluorinated compounds, thereby increasing the concentration of active substances and improving the reaction rate of perfluorinated compounds. The plasma device 10 and the electron beam irradiation device 201 are flexible to operate, and the beam power of the electron beam is large, so the water treatment capacity is also large, which can be applied to large-scale industrial wastewater treatment.

[0066] In some embodiments, please refer to Figure 4 and Figure 5 The first plasma reaction part 100 further includes a first air inlet 102 and a first fan 103. The first fan 103 is arranged in the first air inlet 102, and the first air inlet 102 is in communication with the plasma device 10 of the first plasma reaction part 100. The first fan 103 is used to blow air into the first plasma device 10, thereby realizing the bubbling of the plasma.

[0067] In some embodiments, please refer toFigure 4 and Figure 5 The wastewater treatment device 1000 further comprises a second plasma reaction part 300. The irradiation reaction part 200 is arranged between the first plasma reaction part 100 and the second plasma reaction part 300. The second plasma reaction part 300 comprises the plasma device 10 as in the second aspect. The irradiation reaction part 200 further comprises a second channel 203, one end of the second channel 203 being in communication with the irradiation reaction device 202, and the other end being in communication with the plasma device 10 of the second plasma reaction part 300. The second plasma reaction part 300 further comprises a third channel 301, the third channel 301 being arranged opposite to the second channel 203, and being in communication with the irradiation reaction part 200 and the second plasma reaction part 300. Specifically, one end of the third channel 301 is in communication with the plasma device 10 of the second plasma reaction part 300, and the other end is in communication with the irradiation reaction device 202. The first plasma reaction part 100 and the second plasma reaction part 300 adopt a two-section structure, which reduces the hydraulic retention time. The first plasma reaction part 100, the irradiation reaction part 200 and the second plasma reaction part 300 are arranged in a cross manner, which enhances the synergistic effect of the plasma device 10 and the electron beam irradiation device 201, and saves the floor area of the wastewater treatment device 1000. Further, the second plasma reaction part 300 further comprises a second air inlet 302 and a second fan 303, the second fan 303 being arranged at the second air inlet 302, and the second air inlet 302 being in communication with the plasma device 10 of the second plasma reaction part 300.

[0068] In some embodiments, referring to Figure 4 The irradiation reaction device 202 comprises a baffle 204, the baffle 204 dividing the irradiation reaction device 202 into a first irradiation reaction zone 2021 and a second irradiation reaction zone 2022. One end of the first channel 101 is in communication with the plasma device 10 of the first plasma reaction part 100, and the other end is in communication with the first irradiation reaction zone 2021. One end of the third channel 301 is in communication with the plasma device 10 of the second plasma reaction part 300, and the other end is in communication with the second irradiation reaction zone 2022. The baffle 204 divides the irradiation reaction device 202 into the first irradiation reaction zone 2021 and the second irradiation reaction zone 2022, so that the substances in the first irradiation reaction zone 2021 and the second irradiation reaction zone 2022 do not interfere with each other.

[0069] Further, the first plasma reaction part 100 further comprises a first flow pressure controller 104 connected between the plasma device 10 and the first irradiation reaction zone 2021 of the first plasma reaction part 100. The first flow pressure controller 104 is an instrument for controlling the flow and pressure of fluid, which can control the flow and pressure of fluid by adjusting the valve opening, changing the flow resistance, etc.

[0070] In some embodiments, referring to Figure 4 , the first plasma reaction part 100 further comprises a first water inlet 105, a first gas outlet 106 and a first water outlet 107. In the first direction X, the first gas inlet 102 and the first gas outlet 106 are arranged at both ends of the plasma device 10 of the first plasma reaction part 100, the first water inlet 105 and the first gas inlet 102 are arranged at the same end of the plasma device 10 of the first plasma reaction part 100, and the first gas outlet 106 and the first water outlet 107 are arranged at the same end of the plasma device 10 of the first plasma reaction part 100.

[0071] In some embodiments, referring to Figure 4 , the first plasma reaction part 100 further comprises a first high-voltage probe 108, a first current probe 109 and a first high-voltage power supply 20a, which are connected to the plasma device 10 of the first plasma reaction part 100. The first high-voltage power supply 20a can provide high-voltage power to the plasma device 10 of the first plasma reaction part 100, and the first high-voltage probe 108 and the first current probe 109 can adjust the first high-voltage power supply 20a and the first fan 103 according to the detected voltage and current.

[0072] In some embodiments, referring to Figure 4 , the first plasma reaction part 100 further comprises a first oscilloscope 110 connected in parallel with the first high-voltage power supply 20a. The first oscilloscope 110 can form a waveform to reflect the water quality of the first plasma reaction part 100 of the wastewater treatment equipment 1000 and the content of active substances in the water, and then regulate the current and voltage.

[0073] In some embodiments, the irradiation reaction part 200 further comprises a plurality of irradiation reaction devices 202 arranged in an array along the first direction X. The irradiation reaction part 200 further comprises a slide rail (not shown in the figure) arranged along the first direction X, and the electron beam irradiation device 201 is in sliding connection with the slide rail. The first plasma reaction part 100 can also comprise a plurality of plasma devices 10 arranged in an array, and the second plasma reaction part 300 can also comprise a plurality of plasma devices 10 arranged in an array. By arranging the slide rail in the wastewater treatment equipment 1000, the first plasma reaction part 100 and the irradiation reaction part 200 can be modularly combined and built, the electron beam irradiation device 201 forms a flow line type irradiation treatment process by using the slide rail, accelerates the wastewater treatment process, ensures the balance of the hydraulic retention time in the two wastewater treatment processes of plasma reaction and irradiation reaction, and improves the efficiency of wastewater treatment.

[0074] In order to fully illustrate the application effect of the wastewater treatment equipment 1000 provided by the embodiments of the present application, the following will be described in combination with specific embodiments:

[0075] The wastewater is electroplating wastewater, and after the electroplating wastewater is subjected to physical pretreatment and primary biochemical treatment, the easily degradable COD (Chemical Oxygen Demand) components in the water body have been basically removed.

[0076] Please refer to Figure 4 The electroplating wastewater enters the plasma device 10 of the first plasma reaction part 100 through the first water inlet 105, and is subjected to active substance strong oxidation to induce chain reaction of pollutants. The first high-voltage power supply 20a inputs high-voltage current from the first high-voltage input point 201a into the plasma device 10 of the first plasma reaction part 100, and the first low-voltage input point 301a is connected to the first grounding power supply (not shown in the figure). The air generated by the first air blower 103 enters the plasma device 10 of the first plasma reaction part 100 through the first air inlet 102, forms micro-bubbles through the porous medium plate 11, and then the air is discharged from the first air outlet 106. The voltage and current of the plasma device 10 of the first plasma reaction part 100 are measured by the first high-voltage probe 108 and the first current probe 109, and the first high-voltage power supply 20a and the first air blower 103 are adjusted according to the measurement results, so that the water quality of the first water outlet 107 meets the standard. The waveform is formed by the first oscilloscope 110, and the voltage and current are adjusted in combination with the water quality of the inlet and outlet of the first plasma reaction part 100 and the content of active substances in the water.

[0077] The electroplating wastewater passing through the first plasma reaction part 100 is discharged from the first water outlet 107, and the flow speed and pressure are regulated by the first flow pressure controller 104. The electroplating wastewater enters the first irradiation reaction zone 2021 of the irradiation reaction device 202 from the second water inlet 205 of the irradiation reaction part 200 at a slow speed. The first channel 101 connects the first water outlet 107 and the second water inlet 205. The first flow pressure controller 104 can be arranged between the first water outlet 107 and the second water inlet 205. Specifically, the first flow pressure controller 104 can be arranged in the first channel 101. The high-frequency high-voltage power supply 207 of the irradiation reaction part 200 provides energy for the electron beam irradiation device 201. The high-voltage high-frequency power supply is regulated according to requirements. The radiation dose is adjusted according to the electron beam flow intensity and time of the electron beam irradiation device 201, so as to ensure that the electron beam irradiation device 201 as a radiation source performs a certain amount of irradiation on the irradiation reaction device 202.

[0078] The irradiated wastewater is discharged from the second water outlet 206 of the irradiation reaction part 200, and the flow speed and pressure are regulated by the second flow pressure controller 208. The second flow pressure controller 208 can be arranged between the second water outlet 206 and the third water inlet 304. Specifically, the second flow pressure controller 208 can be arranged in the second channel 203. The irradiated wastewater enters the plasma device 10 of the second plasma reaction part 300 from the third water inlet 304 of the second plasma reaction part 300 at a slow speed, and is subjected to strong oxidation by active substances, so as to induce a chain reaction of pollutants. The second channel 203 connects the second water outlet 206 and the third water inlet 304. The second high-voltage power supply 20b of the second plasma reaction part 300 inputs high-voltage current from the second high-voltage input point 201b into the plasma device 10 of the second plasma reaction part 300. The second low-voltage input point 301b is connected to a second ground power supply (not shown in the figure). The air generated by the second air blower 303 enters the plasma device 10 of the second plasma reaction part 300 through the second air inlet 302, forms micro-bubbles through the porous medium plate 11, and then is discharged from the second air outlet 305. The second high-voltage probe 306 and the second current probe 307 of the second plasma reaction part 300 measure the voltage and current of the plasma device 10 of the second plasma reaction part 300. According to the measurement results, the second high-voltage power supply 20b and the second air blower 303 are adjusted, so that the water quality of the third water outlet 308 meets the standards. The waveform is formed by the second oscilloscope 310, and the voltage and current are adjusted in combination with the water quality of the inlet and outlet of the second plasma reaction part 300 and the content of active substances in the water.

[0079] The electroplating wastewater passing through the second plasma reaction part 300 is discharged from the third water outlet 308, and the flow speed and pressure are regulated by the third flow pressure controller 309. The third flow pressure controller 309 can be arranged between the third water outlet 308 and the fourth water inlet 209, and specifically, the third flow pressure controller 309 can be arranged in the third channel 301. The electroplating wastewater passing through the second plasma reaction part 300 enters the second irradiation reaction zone 2022 of the irradiation reaction device 202 from the fourth water inlet 209 of the irradiation reaction part 200 at a slow speed, and the third channel 301 connects the third water outlet 308 and the fourth water inlet 209. The electron beam irradiation device 201 performs irradiation for a certain time in the second irradiation reaction zone 2022, and the second irradiation reaction reaches a radiation dose, and then is discharged from the fourth water outlet 210 of the irradiation reaction part 200. The wastewater enters the tail water biological filter for removal of active substances.

[0080] Finally, it should be noted that: the above examples are only used to illustrate the technical solutions of the present application, and are not limited thereto; under the idea of the present application, the technical features in the above examples or different embodiments can also be combined, the steps can be implemented in any order, and there are many other changes of different aspects of the present application as described above. In order to be brief, they are not provided in details; although the present application has been described in detail with reference to the foregoing examples, those skilled in the art should understand that: the technical solutions recorded in the foregoing examples can still be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A wastewater treatment device, characterized in that, include: The system comprises a first plasma reaction section, a second plasma reaction section, and an irradiation reaction section, wherein both the first plasma reaction section and the second plasma reaction section are equipped with plasma devices. The irradiation reaction section includes an electron beam irradiation device and an irradiation reaction device, wherein the irradiation reaction device is disposed in the irradiation area of ​​the electron beam irradiation device; The first plasma reaction section further includes a first channel, one end of which is connected to the plasma device of the first plasma reaction section, and the other end of which is connected to the irradiation reaction device. The irradiation reaction section further includes a second channel, one end of which is connected to the irradiation reaction device, and the other end of which is connected to the plasma device of the second plasma reaction section. The second plasma reaction section also includes a third channel, one end of which is connected to the plasma device of the second plasma reaction section, and the other end of which is connected to the irradiation reaction device; The plasma device includes a porous dielectric plate, a high-voltage electrode, and a low-voltage electrode. The porous dielectric plate has a first surface and a second surface disposed opposite to each other. The first surface is connected to the high-voltage electrode, and the second surface is connected to the low-voltage electrode. The first surface includes a plasma region. The porous dielectric plate has channels that penetrate the first surface and the second surface. The channels are used to bubble the plasma in the plasma region. The method for preparing the porous dielectric plate includes: uniformly mixing tetraethoxysilane, water, ethanol, and ammonia to form an alkaline sol; uniformly mixing tetraethoxysilane, water, ethanol, and hydrogen chloride to form an acidic sol; mixing the acidic sol with the alkaline sol to obtain a first sol containing silica; providing an alumina plate; immersing the alumina plate in the first sol containing silica to obtain an alumina plate loaded with a silica coating; placing the alumina plate loaded with the silica coating under a laser, wherein the laser is used to form channels penetrating the alumina plate loaded with the silica coating to obtain the porous dielectric plate.

2. The wastewater treatment equipment according to claim 1, characterized in that, The process of uniformly mixing tetraethoxysilane, water, ethanol, and ammonia to form an alkaline sol includes: At a temperature of 20°C to 25°C, tetraethoxysilane, water, ethanol and ammonia are mixed evenly in a molar ratio of (0.05~2):(1~5):(20~50):(0.02~0.08), stored in the dark for 5 to 15 days, and then reacted at a temperature of 70°C to 80°C for 1 to 3 hours to form an alkaline sol. The process of uniformly mixing tetraethoxysilane, water, ethanol, and hydrogen chloride to form an acid sol includes: Tetraethoxysilane, water, ethanol, and hydrogen chloride are mixed evenly at a temperature of 20°C to 25°C in a molar ratio of (0.05~2):(1~5):(20~50):(0.02~0.08) to form an acid sol.

3. The wastewater treatment equipment according to claim 1, characterized in that, The step of immersing the alumina plate in the first sol containing silica to obtain an alumina plate loaded with a silica coating includes: The alumina plate is immersed in the first sol containing silica, and then the immersed alumina plate is placed in an oven at a temperature of 60°C to 80°C for 30 to 60 minutes to obtain an alumina plate loaded with a silica coating. Before placing the alumina plate with the silica coating under a laser, the preparation method further includes: sintering the alumina plate with the silica coating at a temperature of 400°C to 450°C and for a sintering time of 30 min to 60 min.

4. The wastewater treatment equipment according to claim 1, characterized in that, The first plasma reaction section further includes a first air inlet and a first fan. The first fan is disposed at the first air inlet, and the first air inlet is connected to the plasma device of the first plasma reaction section.

5. The wastewater treatment equipment according to claim 1, characterized in that, The irradiation reaction device includes a baffle that divides the irradiation reaction device into a first irradiation reaction zone and a second irradiation reaction zone. One end of the first channel is connected to the plasma device of the first plasma reaction section, and the other end is connected to the first irradiation reaction zone. One end of the third channel is connected to the plasma device of the second plasma reaction section, and the other end is connected to the second irradiation reaction zone.

6. The wastewater treatment equipment according to claim 1, characterized in that, The second plasma reaction section further includes a second air inlet and a second fan. The second fan is disposed at the second air inlet, and the second air inlet is connected to the plasma device of the second plasma reaction section.

7. The wastewater treatment equipment according to claim 1, characterized in that, Along the first direction, the irradiation reaction section further includes a plurality of irradiation reaction devices arranged in an array; The irradiation reaction section also includes a slide rail, which is arranged along a first direction, and the electron beam irradiation device is slidably connected to the slide rail.

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