A display device and a method for manufacturing the same

Abstract

The present application provides a display device and a method for manufacturing the same. The method for manufacturing the display device includes providing a carrier substrate, providing a light-emitting layer and forming a pixel definition layer, wherein the first light-emitting portion, the second light-emitting portion and the third light-emitting portion of the light-emitting layer are sequentially arranged in the first pixel opening, the second pixel opening and the third pixel opening of the pixel definition layer, coating, heating and grinding a first quantum dot layer to form a plurality of first quantum dot portions in the first pixel opening, coating, heating and grinding a second quantum dot layer to form a plurality of second quantum dot portions in the second pixel opening, coating, heating and grinding a dispersion layer to form a plurality of dispersion portions in the third pixel opening. Compared with the photolithography process in the related art, the method of coating, heating and grinding the first quantum dot layer and the second quantum dot layer respectively will not produce uneven film thickness, uneven edge morphology and the like, and is conducive to improving the light uniformity and visual effect of the display device.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display device and a method for preparing the same. Background Art

[0002] The technology of Micro LED combined with quantum dots has great potential in the display field. In related technologies, when quantum dots form miniaturized graphics, the quantum dot graphics are prone to uneven film thickness and irregular edge morphology, resulting in different light output effects of the display device and affecting the display quality of the product. Summary of the invention

[0003] The purpose of the present application is to provide a display device and a method for preparing the same, so as to solve the technical problem in the related art that quantum dots are prone to uneven film thickness and irregular edge morphology when being formed.

[0004] In a first aspect, the present application provides a display device and a method for manufacturing the same, including:

[0005] providing a carrier substrate;

[0006] Providing a light-emitting layer and forming a pixel definition layer, wherein the light-emitting layer includes a plurality of first light-emitting portions, a second light-emitting portion, and a third light-emitting portion that are sequentially spaced apart, the pixel definition layer includes a retaining wall portion and a plurality of first pixel openings, a second pixel opening, and a third pixel opening that are sequentially spaced apart, the pixel definition layer surrounds the light-emitting layer, the first light-emitting portion is disposed in the first pixel opening, the second light-emitting portion is disposed in the second pixel opening, and the third light-emitting portion is disposed in the third pixel opening;

[0007] Applying, heating and grinding a first quantum dot layer to form a plurality of first quantum dot portions in the first pixel opening;

[0008] Applying, heating and grinding a second quantum dot layer to form a plurality of second quantum dot portions in the second pixel opening;

[0009] A color scattering layer is coated, heated and ground to form a plurality of color scattering portions in the third pixel opening.

[0010] In a method for preparing a display device provided in the present application, a light-emitting layer is provided on a carrier substrate and a pixel definition layer is formed, wherein the light-emitting layer includes a plurality of first light-emitting portions, a second light-emitting portion and a third light-emitting portion which are sequentially spaced apart, the pixel definition layer includes a retaining wall portion and a plurality of first pixel openings, a second pixel opening and a third pixel opening which are sequentially spaced apart, the pixel definition layer surrounds the light-emitting layer, the first light-emitting portion is disposed in the first pixel opening, the second light-emitting portion is disposed in the second pixel opening, and the third light-emitting portion is disposed in the third pixel opening, the first quantum dot layer is coated, heated and ground to form a plurality of first quantum dot portions in the first pixel opening, the second quantum dot layer is coated, heated and ground to form a plurality of second quantum dot portions in the second pixel opening, the color dispersion layer is coated, heated and ground to form a plurality of color dispersion portions in the third pixel opening. Compared with the photolithography process in the related art, the method of coating, heating and grinding the first quantum dot layer and the second quantum dot layer respectively will not produce uneven film thickness, uneven edge morphology and the like, which is conducive to improving the light uniformity and visual effect of the display device.

[0011] Wherein, after providing the light-emitting layer and forming the pixel definition layer, the method comprises:

[0012] A sacrificial layer is formed, wherein the sacrificial layer covers the barrier wall portion, the second pixel opening, and the third pixel opening.

[0013] The coating, heating and grinding of the first quantum dot layer to form the first quantum dot portion in the first pixel opening includes:

[0014] Applying the first quantum dot layer on the barrier wall portion, the first pixel opening, the second pixel opening, and the third pixel opening;

[0015] The first quantum dot layer is ground, and the first quantum dot portion is formed in the first pixel opening, the second pixel opening, and the third pixel opening.

[0016] Wherein, the coating, heating and grinding of the first quantum dot layer, after forming the first quantum dot portion at the first pixel opening, comprises:

[0017] Using a preset laser to irradiate the second pixel opening to peel off the sacrificial layer and the first quantum dot portion in the second pixel opening;

[0018] Applying, heating and grinding the second quantum dot layer to form a second quantum dot portion in the second pixel opening includes:

[0019] coating the second quantum dot layer on the barrier wall portion, the first pixel opening, the second pixel opening, and the third pixel opening;

[0020] The second quantum dot layer is ground and the second quantum dot portion is formed in the second pixel opening.

[0021] Wherein, the coating, heating and grinding of the second quantum dot layer, after forming the second quantum dot portion at the second pixel opening, comprises:

[0022] Using a preset laser to irradiate the third pixel opening to peel off the sacrificial layer and the first quantum dot portion in the third pixel opening;

[0023] The coating, heating and grinding of the dispersion layer to form a plurality of dispersion parts in the third pixel opening includes:

[0024] Applying the color dispersion layer on the retaining wall portion, the first pixel opening, the second pixel opening, and the third pixel opening;

[0025] The color scattering layer is ground, and the color scattering portion is formed in the third pixel opening.

[0026] Among them, the distance between one end of the blocking wall portion away from the supporting substrate and the supporting substrate is a first size, the distance between one end of the light-emitting layer away from the supporting substrate and the supporting substrate is a second size, the first size is greater than the second size, and the difference between the first size and the second size ranges from 2μm to 15μm; the material of the sacrificial layer includes polydimethylsiloxane, and the wavelength of the preset laser includes 254nm and 316nm.

[0027] The coating, heating and grinding of the first quantum dot layer to form a first quantum dot portion at the first pixel opening includes:

[0028] Heating the first quantum dot layer at 80° C. to 150° C. for 10 minutes to 30 minutes;

[0029] The second quantum dot layer is coated, heated and ground to form a second quantum dot portion at the second pixel opening;

[0030] The second quantum layer is heated at 80° C. to 150° C. for 10 to 30 minutes;

[0031] The color dispersion layer is coated, heated and ground to form a color dispersion portion at the third pixel opening;

[0032] The scattering layer is heated at 80° C. to 150° C. for 10 minutes to 30 minutes.

[0033] The coating, heating and grinding of the dispersion layer, after the dispersion portion is formed in the third pixel opening, includes:

[0034] An encapsulation layer is formed and a glass cover is attached to form a display device.

[0035] In a second aspect, the present application provides a display device, which is prepared by the display device preparation method, and the display device includes:

[0036] A carrier substrate;

[0037] A light-emitting layer and a pixel definition layer are provided on the carrier substrate, wherein the light-emitting layer comprises a plurality of first light-emitting portions, a second light-emitting portion and a third light-emitting portion which are sequentially spaced apart, the pixel definition layer comprises a retaining wall portion and a plurality of first pixel openings, a second pixel opening and a third pixel opening which are sequentially spaced apart, the pixel definition layer surrounds the light-emitting layer, the first light-emitting portion is provided in the first pixel opening, the second light-emitting portion is provided in the second pixel opening, and the third light-emitting portion is provided in the third pixel opening;

[0038] A plurality of first quantum dot portions are disposed in the first pixel opening and on a side of the first light emitting portion away from the carrier substrate;

[0039] A plurality of second quantum dot portions, disposed in the second pixel opening and disposed on a side of the second light emitting portion away from the carrier substrate;

[0040] A plurality of color scattering parts are arranged in the third pixel opening and on a side of the third light emitting part away from the supporting substrate.

[0041] Wherein, the display device further includes:

[0042] An encapsulation layer, the encapsulation layer covers the first quantum dot portions, the second quantum dot portions, the scattering portion and the pixel definition layer;

[0043] A glass cover plate is arranged on a side of the packaging layer away from the supporting substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0045] Figure 1 is a flow chart of a method for preparing a display device provided in an embodiment of the present application;

[0046] Figure 2 is a cross-sectional view of a display device manufacturing method after step S200 provided in an embodiment of the present application;

[0047] Figure 3 is a cross-sectional view of a display device manufacturing method after step S300 provided in an embodiment of the present application;

[0048] Figure 4 is a cross-sectional view of a display device manufacturing method after step S400 provided in an embodiment of the present application;

[0049] Figure 5 is a cross-sectional view of a display device manufacturing method after step S500 provided in an embodiment of the present application;

[0050] Figure 6 is a flowchart of the steps included in step S300 of a method for preparing a display device provided in an embodiment of the present application;

[0051] Figure 7 is a cross-sectional view of a display device manufacturing method after step S301 provided in an embodiment of the present application;

[0052] Figure 8 This is a flow chart of a display device manufacturing method provided in an embodiment of the present application and further included after step S200;

[0053] Fig. 9 is a cross-sectional view of a display device manufacturing method after step S210 provided in an embodiment of the present application;

[0054] Fig.10 It is a flow chart of a display device manufacturing method provided in an embodiment of the present application and further included after step S300;

[0055] Fig.11 is a cross-sectional view of a display device manufacturing method after step S310 provided in an embodiment of the present application;

[0056] Fig.12 is a flowchart of the steps included in step S400 of a method for preparing a display device provided in an embodiment of the present application;

[0057] Fig.13 is a cross-sectional view of a display device manufacturing method after step S401 provided in an embodiment of the present application;

[0058] Fig.14 It is a flow chart of a display device manufacturing method provided in an embodiment of the present application and also included after step S400;

[0059] Fig.15 is a cross-sectional view of a display device manufacturing method after step S410 provided in an embodiment of the present application;

[0060] Fig.16is a flowchart of the steps included in step S500 of a method for preparing a display device provided in an embodiment of the present application;

[0061] Fig.17 is a cross-sectional view of a display device manufacturing method after step S501 provided in an embodiment of the present application;

[0062] Fig.18 It is a flow chart of the steps after step S500 of a method for manufacturing a display device provided in an embodiment of the present application;

[0063] Fig.19 It is a partial cross-sectional view of a display device provided in an embodiment of the present application.

[0064] Description of labels:

[0065] Carrying substrate-10, first light-emitting portion-21, second light-emitting portion-22, third light-emitting portion-23, pixel definition layer-30, first pixel opening-31, second pixel opening-32, third pixel opening-33, retaining wall portion-34, first quantum dot layer-40, first quantum dot portion-41, second quantum dot layer-50, second quantum dot portion-51, scattering layer-60, scattering portion-61, encapsulation layer-70, glass cover plate-80, sacrificial layer-90. DETAILED DESCRIPTION

[0066] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0067] Reference to "embodiment" or "implementation" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiment or implementation may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0068] It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the above drawings are used to distinguish different objects rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions.

[0069] In this specification, for the sake of convenience, the words and phrases indicating the orientation or positional relationship such as "middle", "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like are used to illustrate the positional relationship of the constituent elements with reference to the drawings. This is only for the convenience of describing this specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. The positional relationship of the constituent elements is appropriately changed according to the orientation of the constituent elements being described. Therefore, it is not limited to the words and phrases described in the specification, and can be appropriately replaced according to the circumstances.

[0070] In this specification, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate, or the internal communication of two elements. For ordinary technicians in this field, the meanings of the above terms in this disclosure can be understood according to the circumstances.

[0071] Micro LED combined with quantum dot technology has great potential in the display field. Currently, there are two main schemes for quantum dot patterning: First, inkjet printing method, this method is to spray red and green color conversion quantum dot materials in the pit sub-pixels formed by the retaining wall, and then UV cure. Although this method can save more than 90% of quantum dot materials, it is limited by printing accuracy and can only produce 30um graphics at present; second, photolithography technology, through coating, exposure and development, to form tiny graphic quantum dots. However, in order to improve the conversion efficiency of quantum dots, a certain proportion of scattered particles (such as TiO2) are usually doped in the quantum dot photoresist. Because of the addition of scattered particles, during the exposure process, the scattered particles have a scattering effect on light, which is not conducive to the formation of quantum dot miniaturization graphics. Quantum dot graphics are prone to uneven film thickness and uneven edge morphology, resulting in different light output effects of the display device, affecting the display taste of the product.

[0072] Please refer to Figures 1 to 5 The present application provides a method for preparing a display device to solve the technical problems in the related art that quantum dots are prone to uneven film thickness and irregular edge morphology during formation.

[0073] The method for preparing a display device includes steps S100 , S200 , S300 , S400 , and S500 . Steps S100 , S200 , S300 , S400 , and S500 are described in detail as follows.

[0074] S100: providing a carrier substrate 10 .

[0075] In this embodiment, the carrier substrate 10 may be a flexible substrate. Optionally, the carrier substrate 10 may be made of any one or more of the following materials: polyimide, polyethylene terephthalate (PET), polyethylene naphthalate diformicacid glycol ester (PEN), cycloolefin polymer (COP), polycarbonate (PC), polystyrene (PS), polypropylene (PP), polytetrafluoroethylene (PTFE). In other embodiments, the carrier substrate 10 may also be a non-flexible substrate, such as glass, ceramics, etc., which is not limited in this application.

[0076] S200: Provide a light-emitting layer and form a pixel definition layer 30, wherein the light-emitting layer includes a plurality of first light-emitting portions 21, a second light-emitting portion 22 and a third light-emitting portion 23 that are sequentially spaced apart, the pixel definition layer 30 includes a retaining wall portion 34 and a plurality of first pixel openings 31, a second pixel opening 32 and a third pixel opening 33 that are sequentially spaced apart, the pixel definition layer 30 surrounds the light-emitting layer, the first light-emitting portion 21 is disposed in the first pixel opening 31, the second light-emitting portion 22 is disposed in the second pixel opening 32, and the third light-emitting portion 23 is disposed in the third pixel opening 33.

[0077] Specifically, in this embodiment, the light-emitting layer is transferred to the carrier substrate 10 by mass transfer. In other embodiments, the light-emitting layer can also be prepared and formed on the carrier substrate 10, and this application does not limit this. It should be noted that in this embodiment, the light-emitting layer can be used to emit blue light, that is, the first light-emitting part 21, the second light-emitting part 22 and the third light-emitting part 23 are all blue light LED lamps. In other embodiments, the light-emitting layer can also be used to emit white light or other colors of visible light. This application only uses the light-emitting layer emitting blue light as an example, which should not be understood as a limitation to this application.

[0078] The pixel definition layer 30 includes a retaining wall portion 34 and a plurality of first pixel openings 31, second pixel openings 32 and third pixel openings 33 that are sequentially spaced apart. Specifically, the pixel definition layer 30 forms a plurality of groove structures, which are the first pixel openings 31, the second pixel openings 32 and the third pixel openings 33. The groove structures are used to accommodate sub-pixels. The preparation method of the pixel definition layer 30 includes but is not limited to using inkjet printing, coating and other methods.

[0079] S300 : coating, heating and grinding the first quantum dot layer 40 to form a plurality of first quantum dot portions 41 in the first pixel opening 31 .

[0080] It should be noted that, in the present embodiment, the first quantum dot layer 40 is a red quantum dot layer, and the blue light emitted by the light-emitting layer excites the first quantum dot layer 40 and emits red visible light. In other embodiments, the first quantum dot layer 40 may also be a green quantum dot layer or a quantum dot layer of other colors. The present application only takes the first quantum dot layer 40 as a red quantum dot layer as an example, which should not be construed as a limitation to the present application.

[0081] The first quantum dot portion 41 is doped with a certain proportion of scattered particles, such as scattered particles made of materials such as TiO2, which can cause the visible light emitted by the first light-emitting portion 21 to be scattered inside the first quantum dot portion 41, thereby improving the light conversion efficiency of the first quantum dot portion 41.

[0082] S400 : coating, heating and grinding the second quantum dot layer 50 to form a plurality of second quantum dot portions 51 in the second pixel opening 32 .

[0083] It should be noted that, in this embodiment, the second quantum dot layer 50 is a green quantum dot layer, and the blue light emitted by the light-emitting layer excites the second quantum dot layer 50 and emits green visible light. In other embodiments, the second quantum dot layer 50 may also be a red quantum dot layer or a quantum dot layer of other colors. This application only takes the second quantum dot layer 50 as a green quantum dot layer as an example, which should not be construed as a limitation on this application.

[0084] The second quantum dot portion 51 is doped with a certain proportion of scattering particles, such as scattering particles made of materials such as TiO2, which can cause the visible light emitted by the second light-emitting portion 22 to be scattered inside the second quantum dot portion 51, thereby improving the light conversion efficiency of the second quantum dot portion 51.

[0085] S500 : coating, heating and grinding the color scattering layer 60 to form a plurality of color scattering portions 61 in the third pixel opening 33 .

[0086] The scattering portion 61 is doped with a certain proportion of scattering particles, such as scattering particles made of materials such as TiO 2 .

[0087] The visible light emitted by the third light emitting portion 23 can be scattered inside the scattering portion 61, thereby improving the uniformity of the light emitted by the third light emitting portion 23, and further improving the uniformity of the overall display of the display device.

[0088] In a method for preparing a display device provided in the present application, a light-emitting layer is provided on a carrier substrate 10 and a pixel definition layer 30 is formed, wherein the light-emitting layer includes a plurality of first light-emitting portions 21, a second light-emitting portion 22 and a third light-emitting portion 23 which are sequentially spaced apart, the pixel definition layer 30 includes a retaining wall portion 34 and a plurality of first pixel openings 31, a second pixel opening 32 and a third pixel opening 33 which are sequentially spaced apart, the pixel definition layer 30 surrounds the light-emitting layer, the first light-emitting portion 21 is disposed in the first pixel opening 31, the second light-emitting portion 22 is disposed in the second pixel opening 32, and the third light-emitting portion 23 is disposed in the third pixel opening 33, a first quantum dot layer 40 is coated, heated and ground to form a plurality of first quantum dot portions 41 in the first pixel opening 31, a second quantum dot layer 50 is coated, heated and ground to form a plurality of second quantum dot portions 51 in the second pixel opening 32, a dispersion layer 60 is coated, heated and ground to form a plurality of dispersion portions 61 in the third pixel opening 33. Compared with the photolithography process in the related art, the method of coating, heating and grinding the first quantum dot layer 40 and the second quantum dot layer 50 respectively will not cause uneven film thickness, uneven edge morphology, etc., which is beneficial to improving the light uniformity and visual effect of the display device.

[0089] The distance between the end of the retaining wall 34 away from the carrier substrate 10 and the carrier substrate 10 is a first dimension, and the distance between the end of the light-emitting layer away from the carrier substrate 10 and the carrier substrate 10 is a second dimension, the first dimension is greater than the second dimension, and the difference between the first dimension and the second dimension ranges from 2μm to 15μm. In other words, the retaining wall 34 exceeds the surface of the light-emitting layer by 2μm to 15μm, which can be used to prevent problems such as cross talk between different sub-pixels. Optionally, the dimension of the retaining wall 34 exceeding the surface of the light-emitting layer can be 2μm, or 3μm, or 5μm, or 7μm, or 8μm, or 9μm, or 11μm, or 12μm, or 13μm, or 14μm, or 15μm, or other dimensions within 2μm-15μm.

[0090] Please refer to Figure 3 , Figure 6 and Figure 7In one embodiment, step S300 of coating, heating and grinding the first quantum dot layer 40 to form the first quantum dot portion 41 in the first pixel opening 31 includes step S301, step S302 and step S303, and detailed descriptions of step S301, step S302 and step S303 are as follows.

[0091] S301 : coating the first quantum dot layer 40 on the barrier wall portion 34 , the first pixel opening 31 , the second pixel opening 32 , and the third pixel opening 33 .

[0092] In other words, the first quantum dot layer 40 is coated on the entire surface.

[0093] S302: heating the first quantum dot layer 40 at 80° C. to 150° C. for 10 minutes to 30 minutes.

[0094] The first quantum dot layer 40 is heated to allow the first quantum dot layer 40 to be heated and solidified, so as to facilitate subsequent operations such as grinding or peeling off the first quantum dot layer 40 .

[0095] Optionally, the heating temperature of the first quantum dot layer 40 can be 80°C, or 85°C, or 90°C, or 100°C, or 101°C, or 102°C, or 110°C, or 118°C, or 120°C, or 130°C, or 140°C, or 145°C, or 150°C, or other temperatures within the range of 80°C to 150°C, and the present application is not limited to this. Similarly, the time for heating the first quantum dot layer 40 can be 10 minutes, or 11 minutes, or 15 minutes, or 18 minutes, or 20 minutes, or 22 minutes, or 23 minutes, or 26 minutes, or 27 minutes, or 29 minutes, or 30 minutes, or other times within the range of 10 minutes to 30 minutes. Furthermore, the present application does not limit how to heat the first quantum dot layer 40.

[0096] S303 : grinding the first quantum dot layer 40 , and forming the first quantum dot portion 41 in the first pixel opening 31 , the second pixel opening 32 , and the third pixel opening 33 .

[0097] Specifically, the first quantum dot layer 40 is ground and removed except for the first pixel opening 31, the second pixel opening 32 and the third pixel opening 33, and the first quantum dot layer 40 is divided into a plurality of first quantum dot portions 41. In other words, the first quantum dot layer 40 on the retaining wall portion 34 and on the side of the retaining wall portion 34 facing away from the carrier substrate 10 is ground and removed. Furthermore, the first quantum dot layer 40 is ground and the first quantum dot portion 41 is formed, so that the upper surface of the first quantum dot portion 41 is flush with the sacrificial layer on the retaining wall portion 34.

[0098] Please refer to Figure 3 , Figure 8 and Fig. 9 In one embodiment, after providing the light-emitting layer and forming the pixel definition layer 30 in step S200, step S210 is further included. The detailed description of step S210 is as follows.

[0099] S210 : forming a sacrificial layer 90 , wherein the sacrificial layer 90 covers the barrier wall portion 34 , the second pixel opening 32 and the third pixel opening 33 .

[0100] Please refer to Figure 3 , Fig.10 and Fig.11 In one embodiment, after the first quantum dot layer 40 is coated, heated and ground in step S300 and the first quantum dot portion 41 is formed in the first pixel opening 31, step S310 is included. The detailed description of step S310 is as follows.

[0101] S310 : using a preset laser to irradiate the second pixel opening 32 to peel off the sacrificial layer 90 and the first quantum dot portion 41 in the second pixel opening 32 .

[0102] The material of the sacrificial layer 90 includes polydimethylsiloxane (PDMS), and the wavelength of the preset laser includes but is not limited to 254nm and 316nm. When the preset laser irradiates the sacrificial layer 90, the sacrificial layer 90 can be decomposed, and the sacrificial layer 90 and the first quantum dot portion 41 in the second pixel opening 32 can be separated from the second light-emitting portion 22, so that the second light-emitting portion 22 is exposed.

[0103] Please refer to Figure 4 , Fig.12 and Fig.13In one embodiment, step S400 of coating, heating and grinding the second quantum dot layer 50 to form the second quantum dot portion 51 in the second pixel opening 32 includes step S401, step S402 and step S403. The detailed description of step S401, step S402 and step S403 is as follows.

[0104] S401 : coating the second quantum dot layer 50 on the barrier wall portion 34 , the first pixel opening 31 , the second pixel opening 32 , and the third pixel opening 33 .

[0105] In other words, the second quantum dot layer 50 is coated on the entire surface.

[0106] S402: heating the second quantum dot layer 50 at 80° C. to 150° C. for 10 minutes to 30 minutes.

[0107] The second quantum dot layer 50 is heated to allow the second quantum dot layer 50 to be heated and solidified, so as to facilitate subsequent operations such as grinding or peeling off the second quantum dot layer 50 .

[0108] Optionally, the heating temperature of the second quantum dot layer 50 can be 80°C, or 85°C, or 90°C, or 100°C, or 101°C, or 102°C, or 110°C, or 118°C, or 120°C, or 130°C, or 140°C, or 145°C, or 150°C, or other temperatures within the range of 80°C to 150°C, and the present application is not limited to this. Similarly, the time for heating the second quantum dot layer 50 can be 10 minutes, or 11 minutes, or 15 minutes, or 18 minutes, or 20 minutes, or 22 minutes, or 23 minutes, or 26 minutes, or 27 minutes, or 29 minutes, or 30 minutes, or other times within the range of 10 minutes to 30 minutes. Furthermore, the present application does not limit how to heat the second quantum dot layer 50.

[0109] S403 : grinding the second quantum dot layer 50 and forming the second quantum dot portion 51 in the second pixel opening 32 .

[0110] The grinding of the second quantum dot layer 50 specifically grinds and removes the other parts of the second quantum dot layer 50 except those located in the second pixel opening 32, and separates the second quantum dot layer 50 into a plurality of second quantum dot portions 51. In other words, the grinding of the second quantum dot layer 50 on the retaining wall portion 34 and on the side of the retaining wall portion 34 in the vertical direction away from the carrier substrate 10 is performed. Furthermore, the grinding of the second quantum dot layer 50 to form the second quantum dot portion 51 makes the upper surface of the second quantum dot portion 51 flush with the sacrificial layer 90 on the retaining wall portion 34.

[0111] Please refer to Figure 4 , Fig.14 and Fig.15 In one embodiment, after the second quantum dot layer 50 is coated, heated and ground in step S400 and the second quantum dot portion 51 is formed in the second pixel opening 32, step S410 is included. The detailed description of step S410 is as follows.

[0112] S410 : using a preset laser to irradiate the third pixel opening 33 to peel off the sacrificial layer 90 and the first quantum dot portion 41 in the third pixel opening 33 .

[0113] The material of the sacrificial layer 90 and the wavelength of the preset laser are the same as those described above, and are not described in detail in this application. When the preset laser irradiates the sacrificial layer 90, the sacrificial layer 90 can be decomposed, and the sacrificial layer 90 and the first quantum dot portion 41 in the third pixel opening 33 can be separated from the third light-emitting portion 23, so that the third light-emitting portion 23 is exposed.

[0114] Please refer to Figure 5 , Fig.16 and Fig.17 In one embodiment, step S500 of coating, heating and grinding the scattering layer 60, forming a plurality of scattering portions 61 in the third pixel opening 33, includes step S501, step S502 and step S503, and detailed descriptions of step S501, step S502 and step S503 are as follows.

[0115] S501 : coating the color dispersion layer 60 on the barrier wall portion 34 , the first pixel opening 31 , the second pixel opening 32 , and the third pixel opening 33 .

[0116] In other words, the color scattering layer 60 is coated on the entire surface.

[0117] S502: heating the scattering layer 60 at 80°C to 150°C for 10 to 30 minutes.

[0118] The dispersion layer 60 is heated to be heated and solidified, so as to facilitate subsequent operations such as grinding or peeling of the dispersion layer 60 .

[0119] Optionally, the heating temperature of the scattering layer 60 may be 80°C, or 85°C, or 90°C, or 100°C, or 101°C, or 102°C, or 110°C, or 118°C, or 120°C, or 130°C, or 140°C, or 145°C, or 150°C, or other temperatures within the range of 80°C to 150°C, and the present application does not limit this. Similarly, the time for heating the scattering layer 60 may be 10 minutes, or 11 minutes, or 15 minutes, or 18 minutes, or 20 minutes, or 22 minutes, or 23 minutes, or 26 minutes, or 27 minutes, or 29 minutes, or 30 minutes, or other time within the range of 10 minutes to 30 minutes. Moreover, the present application does not limit how to heat the scattering layer 60.

[0120] S503 : grinding the color scattering layer 60 , and forming the color scattering portion 61 in each of the third pixel openings 33 .

[0121] The dispersion layer 60 is ground, specifically, the other parts of the dispersion layer 60 except those located in the third pixel opening 33 are ground and removed, and the dispersion layer 60 is divided into a plurality of dispersion parts 61. In other words, the dispersion layer 60 on the retaining wall part 34 and on the side of the retaining wall part 34 away from the carrier substrate 10 is ground and removed. Further, the dispersion layer 60 is ground to form the dispersion parts 61, so that the upper surface of the dispersion part 61 is flush with the sacrificial layer 90 on the retaining wall part 34, and then the upper surfaces of the first quantum dot part 41, the second quantum dot part 51, and the dispersion part 61 are all flush, thereby improving the flatness and light uniformity of the display device.

[0122] Please refer to Fig.18 and Fig.19 In one embodiment, after the color dispersion layer 60 is coated, heated and ground in step S500 and the color dispersion portion 61 is formed in the third pixel opening 33, step S600 is included. The detailed description of step S600 is as follows.

[0123] S600: forming an encapsulation layer 70 and attaching a glass cover plate 80 to form a display device.

[0124] The encapsulation layer 70 is used to cover the first quantum dot portion 41 , the second quantum dot portion 51 and the scattering portion 61 , and can be used to prevent external water vapor from corroding the luminescent material and the electrode material, so as to increase the service life of the display device.

[0125] The glass cover plate 80 is disposed on the encapsulation layer 70. The glass cover plate 80 can be used to protect the entire display panel from the influence of the external environment, such as dust, moisture, etc., so as to extend the service life of the display device. In addition, the glass cover plate 80 can also improve the appearance of the display device, enhance the visual effect of the display device, and provide users with a better user experience.

[0126] Please refer to Fig.19 The present application also provides a display device, which is prepared by the display device preparation method described above. The display device includes a carrier substrate 10, a light-emitting layer, a pixel definition layer 30, a plurality of first quantum dot portions 41, a plurality of second quantum dot portions 51, and a plurality of scattering portions 61.

[0127] The light-emitting layer and the pixel definition layer 30 are disposed on the carrier substrate 10, wherein the light-emitting layer includes a plurality of first light-emitting portions 21, a second light-emitting portion 22 and a third light-emitting portion 23 which are sequentially spaced apart, the pixel definition layer 30 includes a retaining wall portion 34 and a plurality of first pixel openings 31, a second pixel opening 32 and a third pixel opening 33 which are sequentially spaced apart, the pixel definition layer 30 surrounds the light-emitting layer, the first light-emitting portion 21 is disposed in the first pixel opening 31, the second light-emitting portion 22 is disposed in the second pixel opening 32, and the third light-emitting portion 23 is disposed in the third pixel opening 33. One first quantum dot portion 41 is disposed in one first pixel opening 31 and is disposed on a side of the first light-emitting portion 21 away from the carrier substrate 10. One second quantum dot portion 51 is disposed in one second pixel opening 32 and is disposed on a side of the second light-emitting portion 22 away from the carrier substrate 10. One scattering portion 61 is disposed in one third pixel opening 33 and is disposed on a side of the third light-emitting portion 23 away from the carrier substrate 10.

[0128] The first quantum dot portion 41 and the second quantum dot portion 51 are both doped with a certain proportion of scattering particles, such as scattering particles made of materials such as TiO2, so that the visible light emitted by the second light-emitting portion 22 and the second light-emitting portion 22 can be scattered inside the first quantum dot portion 41 and the second quantum dot portion 51, thereby improving the light conversion efficiency of the first quantum dot portion 41 and the second quantum dot portion 51. The scattering portion 61 is also doped with a certain proportion of scattering particles, so that the visible light emitted by the third light-emitting portion 23 can be scattered inside the scattering portion 61, thereby improving the uniformity of the light emitted by the third light-emitting portion 23, thereby improving the uniformity of the overall display of the display device.

[0129] The upper surfaces of the first quantum dot portion 41 , the second quantum dot portion 51 , and the scattering portion 61 are all flush, thereby improving the flatness and light uniformity of the display device.

[0130] The display device also includes a packaging layer 70 and a glass cover plate 80 , wherein the packaging layer 70 covers the first quantum dot portions 41 , the second quantum dot portions 51 , the scattering portion 61 and the pixel definition layer 30 , and the glass cover plate 80 is disposed on a side of the packaging layer 70 away from the carrier substrate 10 .

[0131] The encapsulation layer 70 is used to cover the first quantum dot portion 41 , the second quantum dot portion 51 and the scattering portion 61 , and can be used to prevent external water vapor from corroding the luminescent material and the electrode material, so as to increase the service life of the display device.

[0132] The glass cover plate 80 is disposed on the encapsulation layer 70. The glass cover plate 80 can be used to protect the entire display panel from the influence of the external environment, such as dust, moisture, etc., so as to extend the service life of the display device. In addition, the glass cover plate 80 can also improve the appearance of the display device, enhance the visual effect of the display device, and provide users with a better user experience.

[0133] The above is part of the implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.

Claims

1. A method for preparing a display device, It is characterized in that include: providing a carrier substrate; Providing a light-emitting layer and forming a pixel definition layer, wherein the light-emitting layer includes a plurality of first light-emitting portions, a second light-emitting portion, and a third light-emitting portion that are sequentially spaced apart, the pixel definition layer includes a retaining wall portion and a plurality of first pixel openings, a second pixel opening, and a third pixel opening that are sequentially spaced apart, the pixel definition layer surrounds the light-emitting layer, the first light-emitting portion is disposed in the first pixel opening, the second light-emitting portion is disposed in the second pixel opening, and the third light-emitting portion is disposed in the third pixel opening; Applying, heating and grinding a first quantum dot layer to form a plurality of first quantum dot portions in the first pixel opening; Applying, heating and grinding a second quantum dot layer to form a plurality of second quantum dot portions in the second pixel opening; A color scattering layer is coated, heated and ground to form a plurality of color scattering portions in the third pixel opening.

2. The method for preparing a display device according to claim 1, It is characterized in that After providing the light-emitting layer and forming the pixel definition layer, the method comprises: A sacrificial layer is formed, wherein the sacrificial layer covers the barrier wall portion, the second pixel opening, and the third pixel opening.

3. The method for preparing a display device according to claim 2, It is characterized in that The coating, heating and grinding of the first quantum dot layer to form a first quantum dot portion in the first pixel opening includes: Applying the first quantum dot layer on the barrier wall portion, the first pixel opening, the second pixel opening, and the third pixel opening; The first quantum dot layer is ground, and the first quantum dot portion is formed in the first pixel opening, the second pixel opening, and the third pixel opening.

4. The method for preparing a display device according to claim 3, It is characterized in that The coating, heating and grinding of the first quantum dot layer, after forming the first quantum dot portion at the first pixel opening, includes: Using a preset laser to irradiate the second pixel opening to peel off the sacrificial layer and the first quantum dot portion in the second pixel opening; Applying, heating and grinding the second quantum dot layer to form a second quantum dot portion in the second pixel opening includes: coating the second quantum dot layer on the barrier wall portion, the first pixel opening, the second pixel opening, and the third pixel opening; The second quantum dot layer is ground and the second quantum dot portion is formed in the second pixel opening.

5. The method for preparing a display device according to claim 4, It is characterized in that The coating, heating and grinding of the second quantum dot layer, after forming the second quantum dot portion at the second pixel opening, comprises: Using a preset laser to irradiate the third pixel opening to peel off the sacrificial layer and the first quantum dot portion in the third pixel opening; The coating, heating and grinding of the dispersion layer to form a plurality of dispersion parts in the third pixel opening includes: Applying the color dispersion layer on the retaining wall portion, the first pixel opening, the second pixel opening, and the third pixel opening; The color scattering layer is ground, and the color scattering portion is formed in the third pixel opening.

6. The method for manufacturing a display device according to claim 4, It is characterized in that A distance between one end of the retaining wall portion away from the carrier substrate and the carrier substrate is a first size, a distance between one end of the light-emitting layer away from the carrier substrate and the carrier substrate is a second size, the first size is greater than the second size, and a difference between the first size and the second size ranges from 2μm to 15μm; the material of the sacrificial layer includes polydimethylsiloxane, and the wavelength of the preset laser includes 254nm and 316nm.

7. The method for manufacturing a display device according to claim 1, It is characterized in that The coating, heating and grinding of the first quantum dot layer to form a first quantum dot portion at the first pixel opening includes: Heating the first quantum dot layer at 80° C. to 150° C. for 10 minutes to 30 minutes; The second quantum dot layer is coated, heated and ground to form a second quantum dot portion at the second pixel opening; Heating the second quantum dot layer at 80° C. to 150° C. for 10 to 30 minutes; The color dispersion layer is coated, heated and ground to form a color dispersion portion at the third pixel opening; The scattering layer is heated at 80° C. to 150° C. for 10 minutes to 30 minutes.

8. The method for manufacturing a display device according to claim 1, It is characterized in that The coating, heating and grinding of the dispersion layer, after the third pixel opening forms the dispersion portion, comprises: An encapsulation layer is formed and a glass cover is attached to form a display device.

9. A display device, It is characterized in that The display device is prepared by the method for preparing a display device according to any one of claims 1 to 8, wherein the display device comprises: A carrier substrate; A light-emitting layer and a pixel definition layer are provided on the carrier substrate, wherein the light-emitting layer comprises a plurality of first light-emitting portions, a second light-emitting portion and a third light-emitting portion which are sequentially spaced apart, the pixel definition layer comprises a retaining wall portion and a plurality of first pixel openings, a second pixel opening and a third pixel opening which are sequentially spaced apart, the pixel definition layer surrounds the light-emitting layer, the first light-emitting portion is provided in the first pixel opening, the second light-emitting portion is provided in the second pixel opening, and the third light-emitting portion is provided in the third pixel opening; A plurality of first quantum dot portions are disposed in the first pixel opening and on a side of the first light emitting portion away from the carrier substrate; A plurality of second quantum dot portions, disposed in the second pixel opening and disposed on a side of the second light emitting portion away from the carrier substrate; A plurality of color scattering parts are arranged in the third pixel opening and on a side of the third light emitting part away from the supporting substrate.

10. The display device according to claim 9, It is characterized in that The display device further includes: An encapsulation layer, the encapsulation layer covers the first quantum dot portions, the second quantum dot portions, the scattering portion and the pixel definition layer; A glass cover plate is arranged on a side of the packaging layer away from the supporting substrate.

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