A method and system for preparing a solar cell

Abstract

The present application discloses a preparation method and system for a solar cell, which are applied to the technical field of solar cells to solve the problem in the prior art that the preparation situation of the tunneling oxide layer cannot be monitored. Specifically: a tunneling oxide layer is formed on the battery chip; the first thickness data is measured, and the quality data of the tunneling oxide layer is determined according to the first thickness data; when it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, an amorphous silicon layer is formed on the tunneling oxide layer; the second thickness data is measured, and the quality data of the amorphous silicon layer is determined according to the second thickness data; when it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment and metallization treatment are sequentially carried out to obtain a solar cell. In this way, on the basis of separating the preparation processes of the tunneling oxide layer and the amorphous silicon layer, the monitoring of the preparation situations of the tunneling oxide layer and the amorphous silicon layer is realized, and the generation of low-efficiency wafers is reduced.

Description

Technical Field

[0001] This application relates to the technical field of solar cells, and in particular, to a method and system for preparing a solar cell. Background Art

[0002] A solar cell is an electrical device that directly converts light energy into electrical energy through the photovoltaic effect. Currently, the most common solar cell is the TOPCon (Thin Oxide Passivated Contact) cell. The core structure of the TOPCon cell consists of an ultra-thin oxide layer and a heavily doped polysilicon layer of the cell, and the two together form a passivated contact structure. While the ultra-thin oxide layer enables majority electrons to tunnel into the polysilicon layer, it can block the recombination of minority holes, and then the electrons are laterally transported in the polysilicon layer and collected by the metal, greatly reducing the metal contact recombination current and increasing the open-circuit voltage and short-circuit current of the cell, thereby improving the cell efficiency. Therefore, the core of the TopCon cell process is the preparation of a tunneling oxide layer with a thickness of 1-2 nm.

[0003] Currently, the preparation of the tunneling oxide layer is mainly carried out based on the LPCVD route or the PECVD route of solar cells. In the current LPCVD and PECVD routes, the tunneling oxide layer and the amorphous silicon layer are deposited simultaneously, and the preparation situation of the tunneling oxide layer cannot be monitored. Summary of the Invention

[0004] Embodiments of this application provide a method and system for preparing a solar cell to solve the problem in the prior art that the preparation situation of the tunneling oxide layer cannot be monitored.

[0005] The technical solutions provided by the embodiments of this application are as follows:

[0006] On the one hand, embodiments of this application provide a method for preparing a solar cell, including:

[0007] Form a tunneling oxide layer on the cell wafer;

[0008] Measure the first thickness data of the tunneling oxide layer formed on the cell wafer, and determine the quality data of the tunneling oxide layer according to the first thickness data; wherein, the quality data includes thickness and / or uniformity data;

[0009] When it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, form an amorphous silicon layer on the tunneling oxide layer;

[0010] Measure the second thickness data of the amorphous silicon layer formed on the cell wafer, and determine the quality data of the amorphous silicon layer according to the second thickness data;

[0011] When it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, the cells with the formed amorphous silicon layer are successively subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment to obtain solar cells.

[0012] In a possible implementation manner, after measuring the first thickness data of the tunneling oxide layer formed on the cell and determining the quality data of the tunneling oxide layer according to the first thickness data, it further includes:

[0013] When it is determined that the quality data of the tunneling oxide layer does not meet the first quality requirement, the tunneling oxide layer is removed and a new tunneling oxide layer is formed until the quality data of the tunneling oxide layer meets the first quality requirement, and then an amorphous silicon layer is formed on the tunneling oxide layer.

[0014] In a possible implementation manner, after measuring the second thickness data of the amorphous silicon layer formed on the cell and determining the quality data of the amorphous silicon layer according to the second thickness data, it further includes:

[0015] When it is determined that the quality data of the amorphous silicon layer does not meet the second quality requirement, the amorphous silicon layer is removed and a new amorphous silicon layer is formed until the quality data of the amorphous silicon layer meets the second quality requirement, and then the cells with the formed amorphous silicon layer are successively subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment.

[0016] In a possible implementation manner, measuring the first thickness data of the tunneling oxide layer formed on the cell and determining the quality data of the tunneling oxide layer according to the first thickness data includes:

[0017] Measuring at a preset position on the cell with the formed tunneling oxide layer to obtain a preset number of first thickness data;

[0018] Determining the thickness of the tunneling oxide layer based on the average value of the preset number of first thickness data;

[0019] Determining the uniformity data of the tunneling oxide layer based on the maximum value, minimum value, and average value of the preset number of first thickness data.

[0020] In a possible implementation manner, measuring the second thickness data of the amorphous silicon layer formed on the cell and determining the quality data of the amorphous silicon layer according to the second thickness data includes:

[0021] Measuring at a preset position on the cell with the formed amorphous silicon layer to obtain a preset number of second thickness data;

[0022] Determining the thickness of the amorphous silicon layer based on the average value of the preset number of second thickness data;

[0023] Determine the uniformity data of the tunneling oxide layer based on the maximum value, minimum value, and average value of the second thickness data among the preset number of second thickness data.

[0024] In a possible implementation manner, forming a tunneling oxide layer on a solar cell wafer includes:

[0025] Using an LPCVD machine tool, deposit a tunneling oxide layer on the solar cell wafer by means of thermal oxidation.

[0026] In a possible implementation manner, forming an amorphous silicon layer on the tunneling oxide layer includes:

[0027] Using a PECVD machine tool, deposit an amorphous silicon layer on the tunneling oxide layer.

[0028] In a possible implementation manner, before forming a tunneling oxide layer on the solar cell wafer, it further includes:

[0029] Polish the solar cell wafer.

[0030] On the other hand, an embodiment of the present application provides a preparation system for a solar cell, including: a main control device, an oxide layer preparation device, a measurement device, an amorphous silicon layer preparation device, an annealing and crystallization device, a cleaning and texturing device, a surface passivation device, and a metallization device; the main control device is respectively connected to the oxide layer preparation device, the measurement device, the amorphous silicon layer preparation device, the annealing and crystallization device, the cleaning and texturing device, the surface passivation device, and the metallization device;

[0031] The oxide layer preparation device is used to form a tunneling oxide layer on the solar cell wafer;

[0032] The measurement device is used to measure the first thickness data of the tunneling oxide layer formed on the solar cell wafer, and is also used to measure the second thickness data of the amorphous silicon layer formed on the solar cell wafer;

[0033] The amorphous silicon layer preparation device is used to form an amorphous silicon layer on the tunneling oxide layer;

[0034] The main control device is used to determine the quality data of the tunneling oxide layer according to the first thickness data; when it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, control the amorphous silicon layer preparation device to form an amorphous silicon layer on the tunneling oxide layer; where the quality data includes thickness and / or uniformity data; it is also used to determine the quality data of the amorphous silicon layer according to the second thickness data; when it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, control the annealing and crystallization device, the cleaning and texturing device, the surface passivation device, and the metallization device to sequentially perform annealing and crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment on the solar cell wafer on which the amorphous silicon layer has been formed;

[0035] The annealing and crystallization device is used to perform annealing and crystallization treatment on the solar cell wafer;

[0036] Cleaning and texturing equipment for cleaning and texturing solar cells;

[0037] Surface passivation equipment for surface passivation of solar cells;

[0038] Metallization equipment for metallizing solar cells.

[0039] In a possible implementation, the oxidation layer preparation equipment is an LPCVD tool, and the amorphous silicon layer preparation equipment is a PECVD tool.

[0040] The beneficial effects of the embodiments of the present application are as follows:

[0041] In the embodiments of the present application, by separately forming the tunneling oxide layer and the amorphous silicon layer, the preparation processes of the tunneling oxide layer and the amorphous silicon layer are separated. On the basis of the separated preparation processes, the quality data of the tunneling oxide layer determined by the first thickness data measured after forming the tunneling oxide layer can be used to monitor the preparation situation of the tunneling oxide layer; the quality data of the amorphous silicon determined by the second thickness data measured after forming the tunneling oxide amorphous silicon layer can be used to monitor the preparation situation of the amorphous silicon layer. By monitoring the preparation situations of the tunneling oxide layer and the amorphous silicon layer, the stability of the preparation process can be ensured, and the generation of low-efficiency wafers can be reduced.

[0042] Other features and advantages of the present application will be described in the following description, and some of them can be made obvious from the description, or understood by implementing the present application. The objectives and other advantages of the present application can be achieved and obtained by the structures specifically pointed out in the written description, claims, and drawings. Description of the Drawings

[0043] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments and descriptions thereof are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0044] Figure 1 Schematic diagram of the LPCVD process for the solar cell in the embodiments of the present application;

[0045] Figure 2 Schematic diagram of the PECVD process for the solar cell in the embodiments of the present application;

[0046] Figure 3 General flow schematic diagram of the preparation method of the solar cell in the embodiments of the present application;

[0047] Figure 4 Specific flow schematic diagram of the preparation method of the solar cell in the embodiments of the present application;

[0048] Figure 5 This is a schematic diagram of the system framework of the solar cell preparation system in the embodiments of the present application. Detailed implementation manners

[0049] In order to make the objectives, technical solutions and beneficial effects of the present application clearer and more understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0050] To facilitate better understanding of the present application by those skilled in the art, the technical terms involved in the present application will be briefly introduced below.

[0051] LPCVD (Low Pressure Chemical Vapor Deposition) is a method in which gaseous compounds react on the surface of a substrate to form a stable solid film under the conditions of low pressure and heating. The LPCVD machine is the equipment for realizing low-pressure chemical vapor deposition. For the schematic diagram of the LPCVD process of the solar cell, refer to Figure 1 as shown.

[0052] PECVD (Plasma Enhanced Chemical Vapor Deposition) is a method in which a gas containing atoms of the film composition is ionized by means of microwaves to form a chemically active plasma locally, and the plasma deposits a desired film on the substrate. The PECVD machine is the equipment for realizing plasma-enhanced chemical vapor deposition. For the schematic diagram of the PECVD process of the solar cell, refer to Figure 2 as shown.

[0053] It should be noted that the "first", "second", etc. mentioned in the present application are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that such terms can be interchanged under appropriate circumstances so that the embodiments described here can be implemented in an order other than that shown or described here. In addition, the "and / or" mentioned in the present application describes the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. The character " / " generally represents an "or" relationship between the related objects before and after.

[0054] After introducing the technical terms involved in the present application, next, the technical solutions provided in the embodiments of the present application will be described in detail.

[0055] An embodiment of the present application provides a method for preparing a solar cell. Refer to Figure 3 As shown, the general process of the method for preparing a solar cell provided by the embodiment of the present application is as follows:

[0056] Step 301: Form a tunneling oxide layer on the cell wafer.

[0057] In practical applications, the cell wafer generally uses an N-type crystalline silicon substrate. Based on preset first parameters, corresponding equipment is controlled to form a tunneling oxide layer on the cell wafer. Among them, the first parameters include data such as the reaction duration, reaction temperature, gas introduced, pressure, and radio frequency power corresponding to the formation of the tunneling oxide layer.

[0058] In specific implementation, to form a tunneling oxide layer on the cell wafer, the following methods can be used but are not limited to:

[0059] Use an LPCVD machine tool to deposit a tunneling oxide layer on the cell wafer by thermal oxidation.

[0060] In practical applications, during the preparation process using thermal oxidation, the temperature is generally set to 500 - 800 °C, and the thickness of the deposited tunneling oxide layer is generally 0.5 - 2 nm. Preparing the tunneling oxide layer by thermal oxidation is denser than the PECVD method, which can effectively improve the surface passivation effect and obtain higher electrical performance.

[0061] Step 302: Measure the first thickness data of the tunneling oxide layer formed on the cell wafer, and determine the quality data of the tunneling oxide layer according to the first thickness data; wherein, the quality data includes thickness and / or uniformity data.

[0062] In practical applications, the first thickness data is the measured thickness of the tunneling oxide layer at a preset position on the cell wafer. The number of the first thickness data can be one or more. The quality data refers to the data reflecting the actual quality of the corresponding film layer, including thickness and / or uniformity data. Among them, the uniformity data refers to the data reflecting the uniformity degree of the corresponding film layer. Specifically, to measure the first thickness data of the tunneling oxide layer formed on the cell wafer and determine the quality data of the tunneling oxide layer according to the first thickness data, the following methods can be used but are not limited to:

[0063] First, measure at a preset position on the cell wafer on which the tunneling oxide layer has been formed to obtain a preset number of first thickness data;

[0064] Then, determine the thickness of the tunneling oxide layer based on the thickness of the cell wafer and the average value of the preset number of first thickness data;

[0065] Finally, determine the uniformity data of the tunneling oxide layer based on the maximum value, minimum value, and average value of the first thickness data of the preset quantity.

[0066] In practical applications, the detection points set at the preset positions of the battery cells can be specifically set based on the five-point measurement method or the nine-point measurement method. Taking the setting based on the five-point measurement method as an example, the preset positions of the detection points are 5, and the preset positions can be the center point of the battery cell and the four corners of the battery cell. Among them, the preset position of the corner of the battery cell refers to the position close to the corner of the battery cell and with a certain distance left from the two sides of the corner of the battery cell. The first thickness data can be measured at the preset positions by using a spectroscopic film thickness measuring instrument, and the average value of the preset quantity of the first thickness data is used as the thickness of the tunneling oxide layer. Among them, the quantity of the first thickness data is the same as the quantity of the preset positions. Taking the preset positions of the detection points being 5 as an example, the thickness of the tunneling oxide layer is the average value of a total of 5 first thickness data measured at 5 preset positions respectively. Determine the uniformity data of the tunneling oxide layer based on the maximum value, minimum value, and average value of the preset quantity of the first thickness data, and it can be specifically determined by the following formula.

[0067]

[0068] Among them, Y1 is the uniformity data of the tunneling oxide layer, and X 1max is the maximum value in the first thickness data, and X 1min is the minimum value in the first thickness data, and X 1ave is the average value of the first thickness data.

[0069] Step 303: When it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, form an amorphous silicon layer on the tunneling oxide layer.

[0070] In practical applications, the first quality requirement includes the target thickness range of the tunneling oxide layer and the target uniformity range of the tunneling oxide layer. After determining the quality data of the tunneling oxide layer, it can be judged whether the quality data of the tunneling oxide layer meets the first quality requirement, which can be specifically divided into but not limited to the following two situations:

[0071] The first situation: The quality data of the tunneling oxide layer meets the first quality requirement, and an amorphous silicon layer is formed on the tunneling oxide layer.

[0072] In practical applications, when the quality data of the tunneling oxide layer includes thickness and uniformity data, the quality data of the tunneling oxide layer meeting the first quality requirement means that the thickness of the tunneling oxide layer is within the target thickness range of the tunneling oxide layer, and the uniformity data of the tunneling oxide layer is within the target uniformity range of the tunneling oxide layer; when the quality data of the tunneling oxide layer includes thickness or uniformity data, the quality data of the tunneling oxide layer meeting the first quality requirement means that the thickness of the tunneling oxide layer is within the target thickness range of the tunneling oxide layer, or the uniformity data of the tunneling oxide layer is within the target uniformity range of the tunneling oxide layer. At this time, based on the preset second parameters, the corresponding equipment can be controlled to continue preparing the amorphous silicon layer on the tunneling oxide layer. Among them, the second parameters include data such as the reaction duration, reaction temperature, gas introduced, pressure, and radio frequency power corresponding to the formation of the amorphous silicon layer. Specifically, to form an amorphous silicon layer on the tunneling oxide layer, the following methods can be used but are not limited to:

[0073] Use a PECVD machine to deposit an amorphous silicon layer on the tunneling oxide layer.

[0074] In practical applications, by using a PECVD machine to deposit an amorphous silicon layer and introducing B2H6 gas or PH3 gas during the deposition of the amorphous silicon layer, in-situ doping is achieved, and the thickness of the deposited amorphous silicon layer is generally 50 - 200 nm. Using a PECVD machine to deposit an amorphous silicon layer can avoid the problems of large loss of quartz parts and high material and labor costs in depositing heavily doped polysilicon layers by the LPCVD route.

[0075] The second case: When the quality data of the tunneling oxide layer does not meet the first quality requirement, remove the tunneling oxide layer and reform the tunneling oxide layer until the quality data of the tunneling oxide layer meets the first quality requirement, and then form an amorphous silicon layer on the tunneling oxide layer.

[0076] In practical applications, when the quality data of the tunneling oxide layer includes thickness and uniformity data, the quality data of the tunneling oxide layer not meeting the first quality requirement means that the thickness of the tunneling oxide layer is not within the target thickness range of the tunneling oxide layer, and / or the uniformity data of the tunneling oxide layer is not within the target uniformity range of the tunneling oxide layer; when the quality data of the tunneling oxide layer includes thickness or uniformity data, the quality data of the tunneling oxide layer not meeting the first quality requirement means that the thickness of the tunneling oxide layer is not within the target thickness range of the tunneling oxide layer, or the uniformity data of the tunneling oxide layer is not within the target uniformity range of the tunneling oxide layer. At this time, it is necessary to remove the tunneling oxide layer, change the preset first parameter, re-form the tunneling oxide layer, and measure the first thickness data of the re-generated tunneling oxide layer again. According to the first thickness data, determine the quality data of the re-generated tunneling oxide layer. If the quality data of the re-generated tunneling oxide layer meets the first quality requirement, form an amorphous silicon layer on the re-generated tunneling oxide layer; if the quality data of the re-generated tunneling oxide layer does not meet the first quality requirement, then remove the tunneling oxide layer again, re-form the tunneling oxide layer, and repeat the above process until the quality data of the tunneling oxide layer meets the first quality requirement, and then form an amorphous silicon layer on the tunneling oxide layer.

[0077] Step 304: Measure the second thickness data of the amorphous silicon layer formed on the solar cell, and determine the quality data of the amorphous silicon layer according to the second thickness data.

[0078] In practical applications, the second thickness data is the measured thickness of the amorphous silicon layer measured at a preset position of the solar cell. The number of the second thickness data can be one or more. Specifically, measuring the second thickness data of the amorphous silicon layer formed on the solar cell and determining the quality data of the amorphous silicon layer according to the second thickness data can be carried out in, but not limited to, the following manner:

[0079] First, measure at the preset position of the solar cell on which the amorphous silicon layer has been formed to obtain a preset number of second thickness data;

[0080] Then, determine the thickness of the amorphous silicon layer based on the average value of the preset number of second thickness data;

[0081] Finally, determine the uniformity data of the tunneling oxide layer based on the maximum value, the minimum value and the average value of the preset number of second thickness data.

[0082] In practical applications, a spectral film thickness measuring instrument can be used to measure the second thickness data at preset positions, and the average value of the preset number of second thickness data is used as the thickness of the amorphous silicon layer. Among them, the number of second thickness data is the same as the number of preset positions. Taking the preset positions of the detection points as 5 as an example, the thickness of the amorphous silicon layer is the average value of 5 second thickness data measured at 5 preset positions respectively. The uniformity data of the amorphous silicon layer is determined based on the maximum value, minimum value, and average value of the preset number of second thickness data, and can be specifically determined by the following formula.

[0083]

[0084] Among them, Y2 is the uniformity data of the amorphous silicon layer, and X 2max is the maximum value among the second thickness data, and X 2min is the minimum value among the second thickness data, and X 2ave is the average value of the second thickness data.

[0085] Step 305: When it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, the battery with the formed amorphous silicon layer is sequentially subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment to obtain a solar cell.

[0086] In practical applications, the second quality requirement includes the target thickness range and the target uniformity range of the amorphous silicon layer. After determining the quality data of the amorphous silicon layer, it can be judged whether the quality data of the amorphous silicon layer meets the second quality requirement, which can be specifically divided into but not limited to the following two cases:

[0087] The first case: When the quality data of the amorphous silicon layer meets the second quality requirement, the battery with the formed amorphous silicon layer is sequentially subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment to obtain a solar cell.

[0088] In practical applications, when the quality data of the amorphous silicon layer includes thickness and uniformity data, the quality data of the amorphous silicon layer meeting the second quality requirement means that the thickness of the amorphous silicon layer is within the target thickness range of the amorphous silicon layer, and the uniformity data of the amorphous silicon layer is within the target uniformity range of the amorphous silicon layer; when the quality data of the amorphous silicon layer includes thickness or uniformity data, the quality data of the amorphous silicon layer meeting the second quality requirement means that the thickness of the amorphous silicon layer is within the target thickness range of the amorphous silicon layer, or the uniformity data of the amorphous silicon layer is within the target uniformity range of the amorphous silicon layer. At this time, the battery with the formed amorphous silicon layer can be sequentially subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment to obtain a solar cell.

[0089] The second case: When the quality data of the amorphous silicon layer do not meet the second quality requirement, the amorphous silicon layer is removed and the amorphous silicon layer is re-formed until the quality data of the amorphous silicon layer meet the second quality requirement. Then, the battery with the formed amorphous silicon layer is sequentially subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment.

[0090] In practical applications, when the quality data of the amorphous silicon layer include thickness and uniformity data, the situation that the quality data of the amorphous silicon layer do not meet the second quality requirement means that the thickness of the amorphous silicon layer is not within the target thickness range of the amorphous silicon layer, and / or the uniformity data of the amorphous silicon layer is not within the target uniformity range of the amorphous silicon layer; when the quality data of the amorphous silicon layer include thickness or uniformity data, the situation that the quality data of the amorphous silicon layer do not meet the second quality requirement means that the thickness of the amorphous silicon layer is not within the target thickness range of the amorphous silicon layer, or the uniformity data of the amorphous silicon layer is not within the target uniformity range of the amorphous silicon layer. At this time, it is necessary to remove the amorphous silicon layer, change the preset second parameter, re-form the amorphous silicon layer, and measure the second thickness data of the re-generated amorphous silicon layer again. The quality data of the re-generated amorphous silicon layer are determined according to the second thickness data. If the quality data of the re-generated amorphous silicon layer meet the second quality requirement, an amorphous silicon layer is formed on the re-generated amorphous silicon layer; if the quality data of the re-generated amorphous silicon layer do not meet the second quality requirement, the amorphous silicon layer is removed again, the amorphous silicon layer is re-formed, and the above process is repeated until the quality data of the amorphous silicon layer meet the second quality requirement. Then, the battery with the formed amorphous silicon layer is sequentially subjected to annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment.

[0091] In this way, by separately forming the tunneling oxide layer and the amorphous silicon layer, the preparation processes of the tunneling oxide layer and the amorphous silicon layer are separated. On the basis of the separated preparation processes, the quality data of the tunneling oxide layer determined by the first thickness data measured after forming the tunneling oxide layer can be used to monitor the preparation situation of the tunneling oxide layer; the quality data of the amorphous silicon determined by the second thickness data measured after forming the tunneling amorphous silicon layer can be used to monitor the preparation situation of the amorphous silicon layer. By monitoring the preparation situations of the tunneling oxide layer and the amorphous silicon layer, the stability of the preparation process can be ensured, and the generation of low-efficiency wafers can be reduced.

[0092] In a possible implementation manner, before forming the tunneling oxide layer on the battery wafer, it further includes:

[0093] Polishing the battery wafer.

[0094] Next, taking "preparing a solar cell based on a double-sided process" as a specific application scenario, the preparation method of the solar cell provided by the embodiments of the present application will be further described in detail. Refer to Figure 4As shown in the figure, the specific process of the method for preparing a solar cell provided by the embodiment of the present application is as follows:

[0095] Step 401: Select an N-type crystalline silicon substrate as the cell, and polish the cell.

[0096] Step 402: Use an LPCVD machine to deposit a tunneling oxide layer on the polished cell by thermal oxidation. The thickness of the tunneling oxide layer is 0.5 - 2 nm.

[0097] Step 403: Measure the first thickness data of the tunneling oxide layer formed on the cell, and determine the quality data of the tunneling oxide layer according to the first thickness data; wherein, the quality data includes thickness and / or uniformity data.

[0098] Step 404: Determine whether the quality data of the tunneling oxide layer meets the first quality requirement. If not, execute Step 405; if so, execute Step 406.

[0099] Step 405: Remove the tunneling oxide layer, and execute Step 402.

[0100] Step 406: Deposit an amorphous silicon layer by PECVD, and introduce B2H6 gas during the deposition of the amorphous silicon layer to achieve in-situ doping. The thickness of the amorphous silicon layer is 50 - 200 nm.

[0101] Step 407: Measure the second thickness data of the amorphous silicon layer formed on the cell, and determine the quality data of the amorphous silicon layer according to the second thickness data.

[0102] Step 408: Determine whether the quality data of the amorphous silicon layer meets the second quality requirement. If not, execute Step 409; if so, execute Step 410.

[0103] Step 409: Remove the amorphous silicon layer, and execute Step 406.

[0104] Step 410: Perform patterning and remove the surface BSG.

[0105] Step 411: Perform cleaning and polishing, retain the tunneling oxide layer and the amorphous silicon layer on the first side of the cell, and remove the tunneling oxide layer and the amorphous silicon layer on the second side of the cell.

[0106] Step 412: Use an LPCVD machine to deposit a tunneling oxide layer on the second side of the polished cell by thermal oxidation. The thickness of the tunneling oxide layer is 0.5 - 2 nm.

[0107] Step 413: Measure the first thickness data of the tunneling oxide layer formed on the second side of the cell, and determine the quality data of the tunneling oxide layer according to the first thickness data.

[0108] Step 414: Determine whether the quality data of the tunneling oxide layer meets the first quality requirement. If not, execute Step 415; if so, execute Step 416.

[0109] Step 415: Remove the tunneling oxide layer on the second surface of the cell, and execute Step 412.

[0110] Step 416: Deposit an amorphous silicon layer on the tunneling oxide layer on the second surface of the cell by PECVD. During the deposition of the amorphous silicon layer, PH3 gas is introduced to achieve in-situ doping. The thickness of the amorphous silicon layer is 50 - 200 nm.

[0111] Step 417: Measure the second thickness data of the amorphous silicon layer formed on the cell, and determine the quality data of the amorphous silicon layer according to the second thickness data.

[0112] Step 418: Determine whether the quality data of the amorphous silicon layer meets the second quality requirement. If not, execute Step 419; if so, execute Step 420.

[0113] Step 419: Remove the amorphous silicon layer deposited on the tunneling oxide layer on the second surface of the cell, and execute Step 416.

[0114] Step 420: Anneal and crystallize the cell. The annealing temperature is 800 - 950 °C, and the processing time is 0.5 - 2 hours.

[0115] Step 421: Clean and texture the cell.

[0116] Step 422: Passivate the surface of the cell, and then metallize it to make a cell.

[0117] Based on the above embodiments, the embodiments of the present application provide a preparation system for a solar cell. Refer to Figure 5 As shown, the preparation system 500 for a solar cell provided by the embodiments of the present application at least includes: a main control device 510, an oxide layer preparation device 520, a measurement device 530, an amorphous silicon layer preparation device 540, an annealing and crystallization device 550, a cleaning and texturing device 560, a surface passivation device 570, and a metallization device 580; the main control device 510 is respectively connected to the oxide layer preparation device 520, the measurement device 530, the amorphous silicon layer preparation device 540, the annealing and crystallization device 550, the cleaning and texturing device 560, the surface passivation device 570, and the metallization device 580;

[0118] The oxide layer preparation device 520 is used to form a tunneling oxide layer on the cell;

[0119] The measurement device 530 is used to measure the first thickness data of the tunneling oxide layer formed on the cell, and is also used to measure the second thickness data of the amorphous silicon layer formed on the cell;

[0120] An amorphous silicon layer preparation device 540 is used to form an amorphous silicon layer on a tunneling oxide layer;

[0121] A main control device 510 is used to determine the quality data of the tunneling oxide layer according to the first thickness data; when it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, control the amorphous silicon layer preparation device 540 to form an amorphous silicon layer on the tunneling oxide layer; wherein, the quality data includes thickness and / or uniformity data; it is also used to determine the quality data of the amorphous silicon layer according to the second thickness data; when it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, control the annealing crystallization device 550, the cleaning and texturing device 560, the surface passivation device 570, and the metallization device 580 to sequentially perform annealing crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment on the battery with the formed amorphous silicon layer;

[0122] An annealing crystallization device 550 is used to perform annealing crystallization treatment on the battery wafer;

[0123] A cleaning and texturing device 560 is used to perform cleaning and texturing treatment on the battery wafer;

[0124] A surface passivation device 570 is used to perform surface passivation treatment on the battery wafer;

[0125] A metallization device 580 is used to perform metallization treatment on the battery wafer.

[0126] In a possible implementation manner, the oxide layer preparation device is an LPCVD machine, and the amorphous silicon layer preparation device is a PECVD machine.

[0127] It should be noted that the principle of the solar cell preparation system 500 provided in the embodiments of the present application for solving technical problems is similar to that of the solar cell preparation method provided in the embodiments of the present application. Therefore, for the implementation of the solar cell preparation system 500 provided in the embodiments of the present application, reference can be made to the implementation of the solar cell preparation method provided in the embodiments of the present application, and the repeated parts will not be elaborated.

[0128] It should be noted that although several units or sub-units of the device are mentioned in the above detailed description, this division is only exemplary and not mandatory. In fact, according to the embodiments of the present application, the features and functions of the two or more units described above can be embodied in one unit. Conversely, the features and functions of one unit described above can be further divided and embodied by multiple units.

[0129] In addition, although the operations of the method of the present application are described in a specific order in the drawings, this does not require or imply that these operations must be performed in that specific order, or that all the shown operations must be performed to achieve the desired result. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step for execution, and / or one step may be decomposed into multiple steps for execution.

[0130] Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications to these embodiments once they learn the basic creative concepts. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications that fall within the scope of the present application.

[0131] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application is also intended to include these changes and modifications.

Claims

1. A method for preparing a solar cell, characterized in that, Including: Using an LPCVD machine tool, a tunneling oxide layer is formed on the solar cell by thermal oxidation; Measuring first thickness data of the tunneling oxide layer formed on the solar cell, and determining quality data of the tunneling oxide layer based on a plurality of the first thickness data; wherein, the quality data includes thickness and / or uniformity data; When it is determined that the quality data of the tunneling oxide layer meets the first quality requirement, using a PECVD machine tool to form an amorphous silicon layer on the tunneling oxide layer; Measuring second thickness data of the amorphous silicon layer formed on the solar cell, and determining quality data of the amorphous silicon layer based on a plurality of the second thickness data; When it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, annealing and crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment are sequentially performed on the solar cell on which the amorphous silicon layer has been formed to obtain a solar cell; Wherein, determining the quality data of the amorphous silicon layer based on the second thickness data includes: Measuring at a preset position on the solar cell on which the amorphous silicon layer has been formed to obtain a preset number of second thickness data; Determining the thickness of the amorphous silicon layer based on the average value of the preset number of second thickness data; Determining the uniformity data of the amorphous silicon layer based on the maximum value, minimum value, and average value of the preset number of second thickness data; The formula for determining the uniformity data of the tunneling oxide layer is as follows: Among them, Y2 is the uniformity data of the amorphous silicon layer, and X 2max is the maximum value in the second thickness data, and X 2min is the minimum value in the second thickness data, and X 2ave is the average value of the second thickness data.

2. The method for preparing a solar cell according to claim 1, wherein, After measuring the first thickness data of the tunneling oxide layer formed on the solar cell and determining the quality data of the tunneling oxide layer based on the first thickness data, it further includes: When it is determined that the quality data of the tunneling oxide layer does not meet the first quality requirement, removing the tunneling oxide layer and reforming the tunneling oxide layer until the quality data of the tunneling oxide layer meets the first quality requirement, and then forming an amorphous silicon layer on the tunneling oxide layer.

3. The manufacturing method of the solar cell according to claim 1, characterized in that, After measuring the second thickness data of the amorphous silicon layer formed on the solar cell and determining the quality data of the amorphous silicon layer based on the second thickness data, it further includes: When it is determined that the quality data of the amorphous silicon layer does not meet the second quality requirement, removing the amorphous silicon layer and reforming the amorphous silicon layer until the quality data of the amorphous silicon layer meets the second quality requirement, and then annealing and crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment are sequentially performed on the solar cell on which the amorphous silicon layer has been formed.

4. The method for preparing a solar cell according to any one of claims 1-3, characterized in that, Measuring the first thickness data of the tunneling oxide layer formed on the solar cell and determining the quality data of the tunneling oxide layer based on the first thickness data, includes: Measuring at a preset position on the solar cell on which the tunneling oxide layer has been formed to obtain a preset number of first thickness data; Determining the thickness of the tunneling oxide layer based on the average value of the preset number of first thickness data; Determining the uniformity data of the tunneling oxide layer based on the maximum value, minimum value, and average value of the preset number of first thickness data.

5. The manufacturing method of the solar cell according to claim 4, characterized in that, Before forming the tunneling oxide layer on the solar cell, it further includes: Performing a polishing treatment on the solar cell.

6. A preparation system for a solar cell, characterized in that, Including: The master control device, the oxidation layer preparation device, the measurement device, the amorphous silicon layer preparation device, the annealing and crystallization device, the cleaning and texturing device, the surface passivation device, and the metallization device; the master control device is respectively connected to the oxidation layer preparation device, the measurement device, the amorphous silicon layer preparation device, the annealing and crystallization device, the cleaning and texturing device, the surface passivation device, and the metallization device; The oxidation layer preparation device is used to form a tunneling oxidation layer on the battery wafer; The measurement device is used to measure the first thickness data of the tunneling oxidation layer formed on the battery wafer, and is also used to measure the second thickness data of the amorphous silicon layer formed on the battery wafer; The amorphous silicon layer preparation device is used to form an amorphous silicon layer on the tunneling oxidation layer; The master control device is used to determine the quality data of the tunneling oxidation layer according to the first thickness data; when it is determined that the quality data of the tunneling oxidation layer meets the first quality requirement, it controls the amorphous silicon layer preparation device to form an amorphous silicon layer on the tunneling oxidation layer; wherein, the quality data includes thickness and / or uniformity data; it is also used to determine the quality data of the amorphous silicon layer according to the second thickness data; when it is determined that the quality data of the amorphous silicon layer meets the second quality requirement, it controls the annealing and crystallization device, the cleaning and texturing device, the surface passivation device, and the metallization device to sequentially perform annealing and crystallization treatment, cleaning and texturing treatment, surface passivation treatment, and metallization treatment on the battery wafer on which the amorphous silicon layer has been formed; The annealing and crystallization device is used to perform annealing and crystallization treatment on the battery wafer; The cleaning and texturing device is used to perform cleaning and texturing treatment on the battery wafer; The surface passivation device is used to perform surface passivation treatment on the battery wafer; The metallization device is used to perform metallization treatment on the battery wafer.

7. The preparation system of the solar cell according to claim 6, characterized in that, The oxidation layer preparation device is an LPCVD machine tool, and the amorphous silicon layer preparation device is a PECVD machine tool.

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