Substrate processing device and substrate processing method

Abstract

The substrate processing device (1) of the present invention includes a substrate rotating part (20) for holding and rotating a substrate, an outer cup-shaped body (51), an inner cup-shaped body (52), an annular drainage part (64) and an exhaust passage (62). The outer cup-shaped body (51) covers the periphery of the substrate held in the substrate rotating part (20) in an annular shape. The inner cup-shaped body (52) is arranged on the inner side of the outer cup-shaped body (51) and is arranged below the substrate held in the substrate rotating part (20). The annular drainage part (64) is formed between the outer cup-shaped body (51) and the inner cup-shaped body (52) to discharge the processing liquid supplied to the substrate to the outside. The exhaust passage (62) is formed on the inner side of the inner cup-shaped body (52). The inner cup-shaped body (52) has an exhaust hole (61) that connects a liquid receiving space (60) formed by the inner cup-shaped body (52) and the outer cup-shaped body (51) with an exhaust passage (62). The exhaust hole (61) is formed obliquely downward from the outer surface (52c) of the inner cup-shaped body (52) to the inner surface (52d).

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, there has been known a technique for etching the peripheral edge portion of a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) using a processing liquid (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-54170 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology capable of suppressing contamination of a substrate by mist of a processing liquid or the like retained around the substrate.

[0008] Technical solutions to technical problems

[0009] A substrate processing device according to one embodiment of the present invention includes a substrate rotating portion, an outer cup-shaped body, an inner cup-shaped body, an annular drainage portion, and an exhaust passage. The substrate rotating portion holds and rotates the substrate. The outer cup-shaped body covers the periphery of the substrate held by the substrate rotating portion in an annular shape. The inner cup-shaped body is arranged on the inner side of the outer cup-shaped body and below the substrate held by the substrate rotating portion. The annular drainage portion is formed between the outer cup-shaped body and the inner cup-shaped body, and discharges the processing liquid supplied to the substrate to the outside. The exhaust passage is formed on the inner side of the inner cup-shaped body. The inner cup-shaped body has an exhaust hole that connects the liquid receiving space formed by the inner cup-shaped body and the outer cup-shaped body with the exhaust passage. The exhaust hole is formed from the outer surface of the inner cup-shaped body to the inner surface obliquely downward.

[0010] Effects of the Invention

[0011] According to the present invention, it is possible to suppress contamination of a substrate by mist of a processing liquid or the like accumulated around the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0013] Figure 2 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment.

[0014] Figure 3 It is a cross-sectional view showing the structure of the recovery unit according to the embodiment.

[0015] Figure 4 It is a perspective view showing the structure of the second member in the embodiment.

[0016] Figure 5 It is a perspective view showing the structure of the first member according to the embodiment.

[0017] Figure 6 It is a cross-sectional view showing the structure of the annular liquid drain portion according to the embodiment.

[0018] Figure 7 It is a plan view showing the structure of the annular drain portion according to the embodiment.

[0019] Figure 8 This is a timing chart showing an example of a cleaning process of the annular drain portion according to the embodiment.

[0020] Figure 9 This is a timing chart showing another example of the cleaning process of the annular drain portion according to the embodiment.

[0021] Figure 10 It is a perspective view showing the structure of an exhaust duct according to the embodiment.

[0022] Figure 11 It is a cross-sectional view showing the structure of the upper annular member according to Modification 1 of the embodiment.

[0023] Figure 12 It is a cross-sectional view showing the structure of the upper annular member according to Modification 2 of the embodiment.

[0024] Figure 13 It is a cross-sectional view showing the structure of the upper annular member according to Modification 3 of the embodiment.

[0025] Figure 14 It is a cross-sectional view showing the structure of the recovery unit according to the fourth modification of the embodiment.

[0026] Figure 15 It is a cross-sectional view showing the structure of the recovery unit according to the fifth modification of the embodiment.

[0027] Figure 16 It is a cross-sectional view showing the structure of the recovery unit according to the sixth modification of the embodiment.

[0028] Figure 17 It is a cross-sectional view showing the structure of the recovery unit according to the seventh modification of the embodiment.

[0029] Figure 18 It is a cross-sectional view showing the structure of the recovery portion of Modification Example 8 of the embodiment.

[0030] Figure 19It is a perspective view showing the structure of a cover according to Modification 8 of the embodiment.

[0031] Figure 20 This is another perspective view showing the structure of the cover according to Modification 8 of the embodiment.

[0032] Figure 21 It is a perspective view showing the structure of a cover according to Modification 9 of the embodiment.

[0033] Figure 22 This is another perspective view showing the structure of the cover according to Modification 9 of the embodiment.

[0034] Figure 23 It is a perspective view showing the structure of a cover according to Modification 10 of the embodiment.

[0035] Figure 24 This is another perspective view showing the structure of the cover according to Modification 10 of the embodiment.

[0036] Figure 25 It is a perspective view showing the structure of a cover according to Modification 11 of the embodiment.

[0037] Figure 26 This is another perspective view showing the structure of the cover according to Modification 11 of the embodiment.

[0038] Figure 27 It is a perspective view showing the structure of a cover according to Modification 12 of the embodiment. DETAILED DESCRIPTION

[0039] The following describes in detail embodiments of the substrate processing apparatus disclosed in this application with reference to the accompanying drawings. The present invention is not limited to the embodiments described below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of the various elements may differ from reality. Furthermore, the drawings may also contain portions with different dimensional relationships and ratios.

[0040] In addition, in each embodiment below, the same reference numerals are attached to the same parts, and repeated descriptions are omitted. In addition, in order to facilitate understanding of the description, in the drawings referred to below, a rectangular coordinate system is sometimes shown with the X-axis direction, the Y-axis direction, and the Z-axis direction being orthogonal to each other, and the positive direction of the Z-axis being the vertically upward direction.

[0041] Conventionally, there has been a known technique for etching the peripheral edge of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) using a processing liquid. During this peripheral edge etching process, the substrate is rotated at high speed to accelerate the spiral flow from the inner side to the outer side of the substrate surface, thereby preventing droplets of etching liquid from scattering inward from the peripheral edge.

[0042] On the other hand, in the above-mentioned conventional technology, the pressure loss in the flow path from the inside of the cup to the outside of the cup is relatively large. Therefore, when the substrate is rotated at high speed, it is difficult to smoothly discharge the gas in the cup, which flows faster due to the spiral flow, to the outside of the cup. As a result, the substrate may be contaminated by mist of the processing liquid stagnating around the substrate.

[0043] Therefore, people expect a technology that can solve the above-mentioned technical problems and suppress the contamination of the wafer by the mist of the processing liquid retained around the substrate.

[0044] <Overall Structure of Substrate Processing Apparatus>

[0045] First, refer to Figure 1 and Figure 2 , the structure of the substrate processing apparatus 1 according to the embodiment will be described. Figure 1 and Figure 2 Schematic diagram showing the structure of a substrate processing apparatus 1 according to the embodiment.

[0046] like Figure 1 and Figure 2 As shown, the substrate processing apparatus 1 of the embodiment includes a processing container 10 , a substrate rotating unit 20 , an upper surface supply unit 30 , a lower surface supply unit 40 , a recovery unit 50 , and a heating mechanism 70 .

[0047] The processing container 10 accommodates a substrate rotating unit 20 , an upper surface supply unit 30 , a lower surface supply unit 40 , a recovery unit 50 , and a heating mechanism 70 .

[0048] The substrate rotating portion 20 holds the wafer W in a rotatable manner. Specifically, Figure 2 As shown, the substrate rotating unit 20 includes a vacuum chuck 21, a shaft 22, and a driving unit 23. The vacuum chuck 21 sucks and holds the wafer W by vacuuming. The diameter of the vacuum chuck 21 is smaller than that of the wafer W, and the central portion of the lower surface of the wafer W is sucked and held.

[0049] The shaft 22 horizontally supports the vacuum cup 21 at its distal end. The drive unit 23 is connected to the base of the shaft 22. The drive unit 23 rotates the shaft 22 about the vertical axis and moves the shaft 22 and the vacuum cup 21 supported thereon upward and downward.

[0050] like Figure 1 As shown, the upper surface supply unit 30 supplies the processing liquid to the upper surface peripheral portion of the wafer W to etch the upper surface peripheral portion of the wafer W. This can, for example, remove a film formed on the upper surface peripheral portion of the wafer W or clean the upper surface peripheral portion of the wafer W.

[0051] The upper peripheral portion of the wafer W refers to an annular region on the upper surface of the wafer W having a width of about 1 to 5 mm from the end surface.

[0052] The upper surface supply unit 30 includes a nozzle arm 31, a nozzle 32, and a moving mechanism 33. The nozzle arm 31 extends in the horizontal direction (here, the Y-axis direction) and supports the nozzle 32 at the front end portion.

[0053] The nozzle 32 is positioned above the wafer W with its discharge port facing downward, and discharges a treatment liquid such as a chemical solution or a rinse solution onto the upper surface of the wafer W. Examples of chemical solutions include hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), and fluoronitric acid. Fluoronitric acid refers to a mixture of hydrofluoric acid (HF) and nitric acid (HNO3). For example, DIW (deionized water) can be used as the rinse solution.

[0054] The moving mechanism 33 is connected to the base end of the nozzle arm 31. The moving mechanism 33 moves the nozzle arm 31, for example, in the horizontal direction (here, the X-axis direction). Thus, the moving mechanism 33 can move the nozzle 32 between a processing position above the periphery of the wafer W and a standby position outside the processing position.

[0055] The lower surface supply unit 40 supplies the processing liquid to the lower surface peripheral portion of the wafer W to etch the lower surface peripheral portion of the wafer W. This can, for example, remove a film formed on the lower surface peripheral portion of the wafer W or clean the lower surface peripheral portion of the wafer W.

[0056] The lower surface peripheral portion of the wafer W refers to an annular region on the lower surface of the wafer W having a width of about 1 to 5 mm from the end surface.

[0057] like Figure 2 As shown, the lower surface supply unit 40 includes a lower surface nozzle 41, a pipe 42, a valve 43, a flow regulator 44, and a processing liquid supply source 45. The lower surface nozzle 41 is disposed below the wafer W and discharges the processing liquid upward toward the lower surface periphery of the wafer W.

[0058] Pipe 42 connects lower surface nozzle 41 to treatment liquid supply source 45. Valve 43 is provided midway along pipe 42 to open and close pipe 42. Flow regulator 44 is provided midway along pipe 42 to regulate the flow rate of treatment liquid flowing through pipe 42. Treatment liquid supply source 45 is, for example, a tank storing treatment liquid.

[0059] The lower surface supply unit 40 may also include a moving mechanism for horizontally moving the lower surface nozzle 41. In this case, the lower surface supply unit 40 can move the lower surface nozzle 41 between a processing position below the wafer W and a standby position outside the wafer W.

[0060] The recovery unit 50 is arranged to surround the outside of the wafer W and recovers droplets of the processing liquid that have scattered from the wafer W. In the embodiment, the recovery unit 50 is provided with an outer cup-shaped body 51 and an inner cup-shaped body 52 to receive all droplets scattered from the wafer W. The outer cup-shaped body 51 is an example of a cup-shaped body.

[0061] The outer cup 51 annularly covers the periphery of the wafer W held by the substrate rotating unit 20. The outer cup 51 is provided to surround the sides of the wafer W and to surround the upper side of the wafer W, for example.

[0062] The inner cup-shaped body 52 is arranged inside the outer cup-shaped body 51 and below the wafer W held by the substrate rotating unit 20. The inner cup-shaped body 52 is arranged outside the heating mechanism 70, for example.

[0063] The outer cup-shaped body 51 and the inner cup-shaped body 52 are formed of a material having high chemical resistance, such as fluororesin such as PTFE (polytetrafluoroethylene) and PFA (perfluoroalkoxyalkane).

[0064] In addition, the substrate processing apparatus 1 uses a pump 80 (see Figure 3 ) The gas around the wafer W is sucked from the recovery unit 50, thereby efficiently recovering the liquid droplets scattered from around the wafer W. The details of the gas suction mechanism will be described later.

[0065] The heating mechanism 70 is disposed below the wafer W and outside the substrate rotating unit 20 . Specifically, the heating mechanism 70 is disposed between the substrate rotating unit 20 and the inner cup-shaped body 52 .

[0066] The heating mechanism 70 heats the lower surface peripheral portion of the wafer W by supplying heated fluid to the lower surface of the wafer W held by the substrate rotating unit 20. Specifically, Figure 1 As shown, the heating mechanism 70 includes a plurality of discharge ports 71 arranged in a circumferential direction of the wafer W, and heated fluid is supplied to the lower surface of the wafer W through the plurality of discharge ports 71 .

[0067] Furthermore, the substrate processing apparatus 1 of the embodiment includes a control device 11. The control device 11 is, for example, a computer, and includes a control unit 12 and a storage unit 13.

[0068] The storage unit 13 is realized by, for example, a semiconductor memory device such as RAM or flash memory, or a storage device such as a hard disk or an optical disk, and stores programs for controlling various processes executed in the substrate processing apparatus 1 .

[0069] The control unit 12 includes a microcomputer and various circuits including a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, and the like. The control unit 12 controls the operation of the substrate processing apparatus 1 by reading and executing programs stored in the storage unit 13.

[0070] Alternatively, the program may be recorded in a computer-readable storage medium and installed from the storage medium into the storage unit 13 of the control device 11. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0071] <Implementation Method>

[0072] Next, refer to Figures 3 to 10 , the detailed structure and operation of the substrate processing device 1 according to the embodiment are described. Figure 3 2 is a cross-sectional view showing the structure of the recovery unit 50 according to the embodiment, specifically, Figure 1 The cross-sectional view along line AA is shown.

[0073] like Figure 3 As shown, the recovery unit 50 includes an outer cup-shaped body 51, an inner cup-shaped body 52, a liquid receiving space 60, an exhaust hole 61, an exhaust passage 62, an exhaust port 63 and an annular liquid drain 64. In addition, the exhaust port 63 is connected to the pump 80.

[0074] Furthermore, the substrate processing apparatus 1 operates the pump 80 to exhaust the liquid receiving space 60 formed by the outer cup-shaped body 51 and the inner cup-shaped body 52 through the exhaust hole 61, the exhaust passage 62, and the exhaust port 63. Thus, the substrate processing apparatus 1 can exhaust the liquid receiving space 60 formed by the outer cup-shaped body 51 and the inner cup-shaped body 52 around the wafer W.

[0075] The outer cup 51 is provided so as to surround the side outside the wafer W and the upper side outside the wafer W. The outer cup 51 includes a cup base 53 , an upper annular member 54 , and an O-ring 57 .

[0076] The cup-shaped base 53 surrounds the entire circumference of the substrate rotating unit 20 at the outermost circumference of the recovery unit 50 . The cup-shaped base 53 stands vertically to a height substantially the same as that of the upper end of the inner cup-shaped body 52 .

[0077] The upper annular member 54 is provided to surround the upper portion of the outer side of the wafer W. The upper annular member 54 is inclined from the upper end of the cup-shaped base 53 so as to become higher toward the inner side (ie, closer to the wafer W).

[0078] An O-ring 57 is provided between the upper annular member 54 and the cup-shaped body base 53 to seal the space between the upper annular member 54 and the cup-shaped body base 53. In the present invention, the space between the upper annular member 54 and the cup-shaped body base 53 may be sealed by a member other than an O-ring.

[0079] The upper annular member 54 includes a first member 55 and a second member 56. The first member 55 is detachably attached to the upper end of the cup-shaped base 53 and annularly surrounds the outer circumference of the wafer W. The inner surface 55a of the first member 55 is hydrophilic and slopes along the inclined portion 52a of the inner cup-shaped member 52, described later. In other words, the inner surface 55a of the first member 55 is a hydrophilic surface.

[0080] In the present invention, "a surface having hydrophilicity" means that the contact angle of the treatment liquid attached to the surface is 90° or less, and "a surface having hydrophobicity" means that the contact angle of the treatment liquid attached to the surface is 90° or more.

[0081] The second member 56 is detachably attached to at least the inner peripheral end of the first member 55, and has a hydrophobic surface 56a. In other words, the surface 56a of the second member 56 is a hydrophobic surface. Furthermore, the second member 56 has a support portion 56b and a return portion 56c.

[0082] The support portion 56b is supported by the first member 55, for example, at the upper end of the first member 55. The return portion 56c is bent downward from the inner peripheral end of the support portion 56b with a predetermined width (for example, approximately 3 mm) and extends in a direction approaching the peripheral edge of the wafer W.

[0083] The lower end of the return portion 56 c is located at a position that is higher than the height of the wafer W by a predetermined height (e.g., approximately 2 mm). The lower end of the return portion 56 c is located on the outer peripheral side of the wafer W at a predetermined distance (e.g., approximately 5 mm) in the horizontal direction.

[0084] In this way, by setting a gap of a given size between the peripheral portion of the chip W and the lower end portion of the return portion 56 c, the space where the upper surface of the chip W is exposed can be connected to the liquid receiving space 60 formed by the outer cup-shaped body 51 and the inner cup-shaped body 52.

[0085] Here, in the embodiment, the surface 56a of the second member 56, which is located to the side of the wafer W and directly collides with the processing liquid scattered from the wafer W, is hydrophobic. This prevents the processing liquid droplets adhering to the second member 56 from agglomerating and growing larger. Therefore, according to the embodiment, it is possible to prevent the processing liquid newly scattered from the wafer W from colliding with these large droplets and rebounding onto the wafer W.

[0086] Furthermore, in the embodiment, the first member 55 and the second member 56 that directly receive the processing liquid scattered from the wafer W are configured to be detachable from other adjacent members.

[0087] Therefore, even if the surface state of the chip W and the type of processing liquid in the substrate processing device 1 are changed to various conditions, the processing liquid can be prevented from rebounding toward the chip W by optimizing the surface state of the first component 55 and the second component 56 according to the various parameters after the change.

[0088] Therefore, according to the embodiment, regardless of the surface condition of the wafer W and the type of the processing liquid, rebound of the processing liquid from the outer cup-shaped body 51 can be suppressed.

[0089] In the embodiment, the inner surface 55a of the first member 55 as an inclined surface may be hydrophilic. This can prevent the processing liquid that has scattered from the wafer W and adhered to the inner surface 55a of the first member 55 from remaining on the inner surface 55a.

[0090] Therefore, according to the embodiment, it is possible to suppress the processing liquid remaining on the inner surface 55 a from flowing back to the wafer W, and thus it is possible to suppress contamination of the wafer W by the backflowing processing liquid.

[0091] In the embodiment, the inner surface 53a of the cup-shaped base 53 may be hydrophobic, so that the processing liquid reaching the inner surface 53a of the cup-shaped base 53 can flow smoothly to the annular drain portion 64 located below the inner surface 53a.

[0092] In the embodiment, the second member 56 closest to the wafer W in the outer cup-shaped body 51 may include a return portion 56 c. This allows a gap of a predetermined size to be formed between the peripheral edge of the wafer W and the outer cup-shaped body 51 , thereby enabling smooth exhaust of the periphery of the wafer W through the liquid receiving space 60 .

[0093] Furthermore, in the embodiment, since the second member 56 has the return portion 56 c , the area of the first member 55 and the second member 56 near the periphery of the wafer W can be reduced. This reduces the amount of processing liquid adhering to the first member 55 and the second member 56 .

[0094] Therefore, according to the embodiment, the processing liquid remaining on the inner surface 55a of the first member 55 and the surface 56a of the second member 56 can be prevented from flowing back to the wafer W, thereby suppressing contamination of the wafer W caused by the backflowing processing liquid.

[0095] Figure 4 : is a perspective view showing the structure of the second component 56 of the embodiment. Figure 4 As shown in FIG. 1 , the return portion 56 c of the second member 56 of the embodiment is provided along the peripheral edge of the wafer W in an annular shape.

[0096] Furthermore, the return portion 56 c of the embodiment includes an opening 56 d that allows the scattered processing liquid supplied from the nozzle 32 to flow toward the first member 55 .

[0097] This can suppress the scattered processing liquid supplied from the nozzle 32 from directly colliding with the return portion 56c. Therefore, according to the embodiment, it is possible to suppress the processing liquid from rebounding from the return portion 56c.

[0098] The opening 56d can be formed, for example, from the vicinity of the nozzle 32 in the second member 56 to a position where the scattered processing liquid supplied from the nozzle 32 does not directly collide with the second member 56. This can prevent the processing liquid from rebounding from the return portion 56c and from flowing back from the inner surface 55a of the first member 55.

[0099] Therefore, according to the embodiment, contamination of the wafer W caused by the processing liquid scattered from the wafer W can be further suppressed.

[0100] Figure 5 : is a perspective view showing the structure of the first component 55 of the embodiment. Figure 5 As shown in FIG1 , a plurality of grooves 55b are provided on the inner surface 55a of the first member 55 of the embodiment. The grooves 55b are formed along the direction in which the processing liquid supplied to the rotating wafer W splashes outward.

[0101] Thus, the processing liquid adhering to the inner surface 55 a of the first member 55 can be smoothly guided to the annular drain portion 64 using the spiral flow of the wafer W.

[0102] Furthermore, by providing the plurality of grooves 55b on the inner surface 55a, it is possible to prevent the droplets of the processing liquid adhering to the inner surface 55a from aggregating and growing larger. Therefore, according to the embodiment, it is possible to prevent the processing liquid newly scattered from the wafer W from colliding with the large droplets and rebounding onto the wafer W.

[0103] return Figure 3 The inner cup-shaped body 52 is provided inside the outer cup-shaped body 51 along the inner surface of the outer cup-shaped body 51 (the inner surface 53 a of the cup-shaped body base 53 and the inner surface 55 a of the first component 55 ).

[0104] That is, the inner cup-shaped body 52 has an inclined portion 52a provided along the inner surface 55a of the first member 55 as an inclined surface, and a vertical portion 52b provided along the inner surface 53a of the cup-shaped body base 53 as a vertical surface.

[0105] The inclined portion 52a gradually descends as it moves outward from the vicinity of the peripheral edge of the wafer W. The vertical portion 52b extends downward in a substantially vertical direction from the outer peripheral end of the inclined portion 52a.

[0106] The liquid receiving space 60 is formed between the outer cup-shaped body 51 and the inner cup-shaped body 52. The exhaust hole 61 is formed so as to penetrate the inner cup-shaped body 52. The exhaust passage 62 is formed inside the inner cup-shaped body 52.

[0107] The exhaust passage 62 is formed, for example, between the inner cup-shaped body 52 and the wall portion 58 located inside and below the inner cup-shaped body 52. The exhaust passage 62 is connected to the liquid receiving space 60 via an exhaust hole 61.

[0108] The exhaust port 63 is connected to the exhaust passage 62. The exhaust port 63 is provided at a predetermined position of the wall portion 58, for example. The exhaust port 63 may be provided at one or more locations on the wall portion 58. Figure 10 ) are described in detail later.

[0109] An annular drain portion 64 is formed between the outer cup 51 and the inner cup 52 (e.g., between the lower end of the outer cup 51 and the lower end of the inner cup 52). The annular drain portion 64 discharges the processing liquid supplied to the wafer W to the outside. The details of the annular drain portion 64 will be described later.

[0110] Here, in the embodiment, the exhaust hole 61 is formed obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup-shaped body 52. This allows the gas from the liquid receiving space 60 to flow smoothly into the exhaust passage 62, thereby efficiently exhausting the area around the wafer W.

[0111] Therefore, according to the embodiment, contamination of the wafer W by mist of the processing liquid or the like accumulated around the wafer W can be suppressed.

[0112] In the embodiment, the exhaust hole 61 may be disposed in the vertical portion 52b of the inner cup 52. This prevents the processing liquid falling along the outer surface 52c of the inner cup 52 from flowing into the exhaust hole 61 instead of the annular drain portion 64.

[0113] Therefore, according to the embodiment, the processing liquid falling along the inner cup-shaped body 52 can be separated well.

[0114] Figure 6 1 is a cross-sectional view showing the structure of the annular drain portion 64 according to the embodiment. Figure 7 : is a top view showing the structure of the annular drain portion 64 of the embodiment. Figure 7 As shown, the annular drain portion 64 is annular (eg, circular) in a plan view.

[0115] A drainage port 64 a is provided on the bottom surface of the annular drainage portion 64 at a predetermined position. The drainage port 64 a is connected to the drainage portion DR via a drainage conduit 90 .

[0116] In addition, in the embodiment, Figure 6 As shown in FIG. 1 and FIG. 2 , a cleaning liquid nozzle 46 is provided in the lower surface supply portion 40. The cleaning liquid nozzle 46 is provided near the lower surface nozzle 41 and discharges the cleaning liquid CL downward.

[0117] The cleaning liquid CL discharged from the cleaning liquid nozzle 46 is supplied to the cleaning liquid supply portion 64b of the annular drain portion 64 via the groove portion 47 formed in the inner cup-shaped body 52. The cleaning liquid CL of the embodiment is, for example, DIW.

[0118] In addition, if Figure 7 As shown, the cleaning liquid nozzle 46 is provided at a position opposite to the liquid discharge port 64 a , and thus the cleaning liquid supply portion 64 b is provided at a position opposite to the liquid discharge port 64 a .

[0119] Here, in the embodiment, the drain port 64a is provided at the lowest position and the cleaning liquid supply portion 64b is provided at the highest position in the annular drain portion 64. Furthermore, the annular drain portion 64 is formed to gradually lower as it goes from the cleaning liquid supply portion 64b to the drain port 64a.

[0120] Thus, the cleaning liquid CL supplied from the cleaning liquid nozzle 46 to the cleaning liquid supply portion 64b is as follows. Figure 7 As shown, the liquid flows through the entire annular drain portion 64 and is discharged from the drain port 64a. That is, in the embodiment, the cleaning liquid CL is supplied from the cleaning liquid nozzle 46 provided at a position opposite to the drain port 64a to the cleaning liquid supply portion 64b, thereby enabling the entire annular drain portion 64 to be cleaned well.

[0121] Furthermore, in the embodiment, the amount of processing liquid mist remaining in the liquid receiving space 60 can be reduced by operating the cleaning liquid nozzle 46 to clean the annular drain portion 64. Therefore, according to the embodiment, the mist remaining in the liquid receiving space 60 can be prevented from flowing back and contaminating the wafer W.

[0122] Figure 8 1 is a timing chart showing an example of a cleaning process of the annular drain portion 64 according to the embodiment. Figure 8 As shown, in the substrate processing device 1 (refer to Figure 1 ) in which various processes are performed on a wafer W.

[0123] For example, the control unit 12 (see Figure 1 ) First, the wafer W which has completed various processes is taken out of the processing container 10 (refer to Figure 1 ) is sent out, and the next wafer W is sent into the processing container 10 for transportation processing (step S101).

[0124] Next, the control unit 12 applies various liquid treatments to the peripheral portion of the wafer W loaded into the processing container 10 (step S102). The control unit 12 then rinses the wafer W that has been subjected to the various liquid treatments (step S103). This rinsing process is performed by, for example, supplying DIW to the wafer W from the nozzle 32 and the lower surface nozzle 41.

[0125] Next, the control unit 12 performs a drying process on the rinsed wafer W (step S104). This drying process is performed by, for example, rotating the wafer W at a high speed.

[0126] Finally, the control unit 12 performs a transfer process of transferring the wafer W that has completed the above-mentioned processes out of the processing container 10 and transferring the next wafer W into the processing container 10 (step S105 ).

[0127] Here, in Figure 8 In the example shown in FIG. 5 , the control unit 12 performs the cleaning process of the annular drain portion 64 and the conveying process of the wafer W (steps S101 and S105 ) in parallel (step S111 ).

[0128] By performing the cleaning process of the annular drain portion 64 in parallel with the wafer W transfer process, contamination of the wafer W can be suppressed even if the amount of the mist of the processing liquid accumulated in the liquid receiving space 60 increases temporarily during the drain portion cleaning process.

[0129] Figure 9 : is a timing chart showing another example of the cleaning process of the annular drain portion 64 of the embodiment. Figure 9 In the example of FIG. 1 , the control unit 12 performs the cleaning process of the annular drain 64 and the rinsing process of the wafer W (step S103) in parallel (step S121). Figure 9 In the example, for example, DIW is released from the nozzle 32, the lower surface nozzle 41, and the cleaning liquid nozzle 46 simultaneously.

[0130] By performing the cleaning process of the annular drain section 64 in parallel with the rinsing process of the wafer W, it is not necessary to wait for various processes of the wafer W until the drain section cleaning process is completed, thereby shortening the overall processing time of the wafer W.

[0131] Figure 10 1 is a perspective view showing the structure of the exhaust duct 100 according to the embodiment. Figure 10 In the figure, illustration of parts other than the substrate rotating unit 20, the recovery unit 50, the heating mechanism 70 and the exhaust duct 100 is omitted.

[0132] like Figure 10 As shown, the exhaust duct 100 and the exhaust port 63 of the recovery unit 50 (see Figure 3 ) is connected to discharge the exhaust gas in the exhaust passage 62 to the pump 80 (refer to Figure 3 The exhaust duct 100 includes a descending portion 101, a horizontal portion 102, and a rising portion 103 in order from the upstream side.

[0133] The cylindrical descending portion 101 is connected to the exhaust port 63 of the recovery portion 50 and extends downward. The box-shaped horizontal portion 102 is connected to the downstream side of the descending portion 101 and extends horizontally away from the recovery portion 50.

[0134] The cylindrical rising portion 103 is connected to the downstream side of the horizontal portion 102 and extends upward. Furthermore, the rising portion 103 extends to a position above the recovery portion 50. Furthermore, when viewed from above, the downstream side of the horizontal portion 102 of the exhaust duct 100 extends to a position outside the recovery portion 50. Therefore, even if the rising portion 103 extends to a position above the recovery portion 50, it will not interfere with the recovery portion 50.

[0135] As described above, the exhaust duct 100 of the embodiment can be connected to the lower side of the recovery unit 50 and extend above the recovery unit 50. This can prevent the droplets reaching the exhaust passage 62 from being discharged to the outside through the exhaust port 63 via the exhaust duct 100.

[0136] That is, in the embodiment, the liquid droplets reaching the exhaust passage 62 can be separated well by the exhaust duct 100 .

[0137] In addition, in the embodiment, a drainage pipe 104 connected to the drain section DR may be connected to the bottom surface of the horizontal portion 102. This allows droplets reaching the horizontal portion 102 to be discharged to the drain section DR, and the exhaust duct 100 can further effectively separate the droplets reaching the horizontal portion 102.

[0138] Furthermore, in the embodiment, the horizontal portion 102 of the exhaust duct 100 may be box-shaped. Thus, the exhaust duct 100 can be constructed by connecting the descending portion 101 and the ascending portion 103, which are linear pipes, to the box-shaped horizontal portion 102. Therefore, according to the embodiment, the manufacturing cost of the exhaust duct 100 can be reduced.

[0139] In the embodiment, the box-shaped horizontal portion 102 may include an inclined portion 102a below the portion connected to the descending portion 101. This can suppress the generation of vortexes generated when the direction of the exhaust gas changes from downward to horizontal at the portion connected to the descending portion 101.

[0140] Therefore, according to the embodiment, the pressure loss in the exhaust duct 100 can be further reduced, and thus the flow resistance of the entire exhaust path from the periphery of the wafer W to the pump 80 can be further reduced.

[0141] In the embodiment, the box-shaped horizontal portion 102 may include an inclined portion 102b below the portion connected to the ascending portion 103. This can suppress the generation of vortexes generated when the direction of the exhaust gas changes from horizontal to upward at the portion connected to the ascending portion 103.

[0142] Therefore, according to the embodiment, the pressure loss in the exhaust duct 100 can be further reduced, and thus the flow resistance of the entire exhaust path from the periphery of the wafer W to the pump 80 can be further reduced.

[0143] In addition, in the embodiment, the inner diameter of the rising portion 103 may be substantially equal to or larger than the inner diameter of the descending portion 101. In the embodiment, by making the inner diameter of the rising portion 103 larger than the inner diameter of the descending portion 101, the pressure loss in the exhaust duct 100 can be further reduced.

[0144] In addition, in the embodiment, the inner dimension of the box-shaped horizontal portion 102 may be larger than the inner diameters of the cylindrical descending portion 101 and ascending portion 103. Thus, the descending portion 101 and ascending portion 103 can be connected to the horizontal portion 102 without any problem.

[0145] On the other hand, if the internal dimensions of horizontal portion 102 are excessively larger than the inner diameters of descending portion 101 and ascending portion 103, the cross-sectional area of the flow path rapidly expands and contracts at the connection between descending portion 101 and horizontal portion 102, and at the connection between horizontal portion 102 and ascending portion 103, thereby generating a large number of eddy currents. Therefore, in the embodiment, the cross-sectional area of horizontal portion 102 is preferably no more than twice the cross-sectional area of descending portion 101 and ascending portion 103.

[0146] <Variation 1>

[0147] Next, refer to Figures 11 to 17 , various modifications of the substrate processing apparatus 1 according to the embodiment will be described. Figure 11 It is a cross-sectional view showing the structure of the upper annular member 54 according to Modification 1 of the embodiment.

[0148] like Figure 11 As shown, the structure of the second member 56 of the upper annular member 54 of Modification 1 is different from that of the above-described embodiment. Specifically, in Modification 1, the front end portion of the return portion 56c of the second member 56 is further bent outward.

[0149] Thus, in Modification 1, droplets of the processing liquid adhering to the front end of the return portion 56 c can be kept away from the wafer W. Therefore, according to Modification 1, contamination of the wafer W by droplets adhering to the front end of the return portion 56 c can be suppressed.

[0150] In Modification 1, the tip of the return portion 56c may cover the inner peripheral end of the first member 55 from below. This prevents droplets of the treatment liquid from scattering to the inner peripheral end of the first member 55, where droplets are likely to accumulate, because it forms the boundary between the inner surface 55a, which is a hydrophilic surface, and the surface 56a, which is a hydrophobic surface.

[0151] Therefore, according to Modification 1, it is possible to suppress contamination of the wafer W by the liquid droplets adhering to the inner peripheral end of the first member 55 .

[0152] <Variation 2>

[0153] Figure 12 : is a cross-sectional view showing the structure of the upper annular member 54 of the modified example 2 of the embodiment. Figure 12 As shown in FIG. 1 , the structure of the first member 55 of the upper annular member 54 of the second modification is different from that of the above-described embodiment.

[0154] Specifically, in Modification 2, the inner surface 55a of the first member 55 includes a horizontal portion 55a1 and an inclined portion 55a2. The horizontal portion 55a1 is a surface extending substantially horizontally from the inner surface of the second member 56.

[0155] The inclined portion 55a2 is inclined from the outermost periphery of the horizontal portion 55a1 so as to become lower toward the outside. The inclination angle of the inclined portion 55a2 in the second modification is substantially equal to the inclination angle of the inner surface 55a in the embodiment.

[0156] Thus, in Modification 2, droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be kept away from the wafer W. Therefore, according to Modification 2, contamination of the wafer W by droplets adhering to the inner surface 55a can be suppressed.

[0157] <Variation 3>

[0158] Figure 13 : is a cross-sectional view showing the structure of the upper annular member 54 of the modified example 3 of the embodiment. Figure 13 As shown in FIG. 1 , the structure of the first member 55 of the upper annular member 54 of Modification 3 is different from that of Modification 2 described above.

[0159] The horizontal portion 55a1 of Modification 3 extends further toward the outer periphery than the horizontal portion of Modification 2. In addition, the inclination angle of the inclined portion 55a2 of Modification 3 is larger than that of the inclined portion 55a2 of Modification 2.

[0160] Thus, in Modification 3, droplets of the processing liquid adhering to the inner surface 55a of the first member 55 can be further separated from the wafer W. Therefore, according to Modification 3, contamination of the wafer W by droplets adhering to the inner surface 55a can be further suppressed.

[0161] <Variation 4>

[0162] Figure 14 1 is a cross-sectional view showing the structure of the recovery unit 50 according to the fourth modification of the embodiment. Figure 14 As shown in FIG. 1 , the structure of the upper annular member 54 of the recovery portion 50 of Modification 4 is different from that of the above-described embodiment.

[0163] Specifically, in the modification 4, the protruding length of the return portion 56c of the second member 56 is shorter than that of the embodiment. For example, in the modification 4, the return portion 56c (see Figure 3 ) The downward protrusion length is about 3 (mm).

[0164] Thus, in Modification 4, the formation of an extra liquid receiving space 60 on the back side of the return portion 56 c can be suppressed, thereby reducing the size of the vortex generated in the extra liquid receiving space 60. Therefore, according to Modification 4, the flow of gas from the wafer W to the exhaust hole 61 can be smoothed.

[0165] <Variation 5>

[0166] Figure 15 1 is a cross-sectional view showing the structure of the recovery unit 50 according to the fifth modification of the embodiment. Figure 15 As shown in FIG. 1 , the structure of the upper annular member 54 of the recovery portion 50 of the fifth modification is different from that of the above-described embodiment.

[0167] Specifically, in the fifth modification, the return portion 56 c of the second member 56 does not protrude downward, and the inner surface 55 a of the first member 55 directly extends outward from the lower end portion of the return portion 56 c.

[0168] Thus, in Modification 5, the formation of an extra liquid receiving space 60 on the back side of the return portion 56 c can be further suppressed, thereby further reducing the size of the eddy current generated in the extra liquid receiving space 60. Therefore, according to Modification 5, the flow of gas from the wafer W to the exhaust hole 61 can be made smoother.

[0169] <Variation 6>

[0170] Figure 16 1 is a cross-sectional view showing the structure of the recovery portion 50 of the sixth modification of the embodiment. In the embodiments and various modifications described so far, an example is given in which the exhaust hole 61 connecting the liquid receiving space 60 and the exhaust passage 62 is provided in the inner cup-shaped body 52, but the present invention is not limited to this example.

[0171] For example, Figure 16 As shown, an exhaust hole 61 may be provided in the outer cup-shaped body 51. The exhaust hole 61 includes an ascending portion 61a, a curved portion 61b, and a descending portion 61c. The ascending portion 61a extends upward from the upper end of the outermost periphery of the liquid receiving space 60 to between the cup-shaped body base 53 and the upper annular member 54.

[0172] The curved portion 61b curves downward from the downstream end of the ascending portion 61a between the cup-shaped base 53 and the upper annular member 54. The descending portion 61c extends downward from the downstream end of the curved portion 61b into the interior of the cup-shaped base 53. The downstream side of the descending portion 61c is connected to the exhaust passage 62.

[0173] Even if the exhaust hole 61 has such a structure, by making the first component 55 and the second component 56 capable of being detached from other components, the surface state of the first component 55 and the second component 56 can be optimized even when the surface state of the chip W and the type of processing liquid are changed to various situations.

[0174] Therefore, according to the sixth modification, regardless of the surface condition of the wafer W or the type of the processing liquid, rebound of the processing liquid from the outer cup-shaped body 51 can be suppressed.

[0175] Furthermore, in Modification 6, since the rising portion 61a is provided upstream of the exhaust hole 61, it is possible to suppress droplets of the processing liquid from entering the exhaust hole 61. Therefore, according to the embodiment, the droplets reaching the exhaust hole 61 can be separated well by the rising portion 61a.

[0176] <Variant 7>

[0177] Figure 17 This is a cross-sectional view showing the structure of the recovery unit 50 according to Modification 7 of the embodiment. In the embodiment and various modifications described so far, the upper annular member 54 of the outer cup 51 is detachably configured, but the present invention is not limited to this example.

[0178] For example, Figure 17 As shown, the outer cup-shaped body 51 may also be formed integrally. The outer cup-shaped body 51 includes a base portion 51a, an upper annular portion 51b, and a return portion 51c.

[0179] The base 51a surrounds the entire circumference of the substrate rotating unit 20 at the outermost circumference of the recovery unit 50. The base 51a stands vertically to a height approximately the same as the upper end of the inner cup-shaped body 52.

[0180] The upper annular portion 51b is provided so as to surround the upper portion of the outer side of the wafer W. The upper annular portion 51b is inclined from the upper end portion of the base portion 51a so as to gradually rise toward the inner side (ie, toward the wafer W).

[0181] The return portion 51 c is bent from the inner peripheral end of the upper annular portion 51 b to a predetermined width (eg, approximately 3 mm) and extends in a direction approaching the peripheral edge of the wafer W.

[0182] Even with such a structure of the outer cup 51 , the gas flow from the liquid receiving space 60 to the gas exhaust passage 62 can be smoothed by forming the gas exhaust hole 61 obliquely downward from the outer surface 52 c of the inner cup 52 to the inner surface 52 d .

[0183] Therefore, according to Modification 7, the area around the wafer W can be efficiently exhausted, thereby preventing the wafer W from being contaminated by mist of the processing liquid accumulated around the wafer W.

[0184] In Modification 7, similarly to the above-described embodiment, the exhaust hole 61 may be disposed in the vertical portion 52b of the inner cup-shaped body 52. This prevents the processing liquid that falls along the outer surface 52c of the inner cup-shaped body 52 from flowing into the exhaust hole 61 instead of the annular drain portion 64.

[0185] Therefore, according to Modification 7, the processing liquid falling along the inner cup-shaped body 52 can be separated well.

[0186] <Variant 8>

[0187] Figure 18 This is a cross-sectional view showing the structure of the recovery portion 50 of Modification 8 of the embodiment. In the embodiment and various modifications described so far, examples of providing the return portion 56c or the return portion 51c on the outer cup 51 have been given, but the present invention is not limited to this example.

[0188] For example, Figure 18 As shown, in the outer cup-shaped body 51 formed integrally, the outer cup-shaped body 51 may be formed of the base portion 51 a and the upper annular portion 51 b .

[0189] In Modification 8, the inner surface 51 d of the outer cup 51 has a horizontal portion 51 d 1 extending horizontally outward from a portion closest to the wafer W (eg, the inner peripheral end of the outer cup 51 ).

[0190] Thus, the spiral flow of the wafer W going from the wafer W to the outside can be made along the horizontal portion 51 d 1 , so that the processing liquid adhering to the horizontal portion 51 d 1 can be smoothly guided to the annular drain portion 64 using the spiral flow of the wafer W.

[0191] Therefore, according to Modification 8, the processing liquid remaining in the horizontal portion 51d1 can be prevented from flowing back to the wafer W, and thus contamination of the wafer W by the backflowing processing liquid can be suppressed.

[0192] Figure 19 and Figure 20 : is a perspective view showing the structure of the cover 59 of the modification 8 of the embodiment. Figure 19 This is a perspective view of the nozzle 32 as viewed from the inside. Figure 20 This is a perspective view of the nozzle 32 as viewed from above. Figure 19 and Figure 20 The nozzle 32 is shown in a processing position above the peripheral edge of the wafer W.

[0193] like Figure 19 and Figure 20 As shown, in Modification 8, the nozzle 32 includes a cover 59. The cover 59 is disposed around the nozzle 32. The cover 59 includes side walls 59a, 59b, and 59c, an upper wall 59d, and a protruding portion 59e.

[0194] The sidewall portions 59a, 59b, and 59c are respectively arranged near the sides of the nozzle 32 and extend in the vertical direction. The sidewall portion 59a is arranged on the inner side of the nozzle 32 when viewed from the center of the substrate rotating unit 20. The sidewall portion 59b is arranged on the outer side of the nozzle 32 when viewed from the center of the substrate rotating unit 20. The sidewall portion 59c is provided at a position connecting the sidewall portions 59a and 59b.

[0195] The upper wall portion 59d is positioned above the nozzle 32 and extends horizontally. The upper wall portion 59d is positioned above the nozzle 32, connecting the side wall portions 59a and 59b. The protrusion 59e is positioned outside the side wall portion 59b and extends horizontally. Specifically, the protrusion 59e protrudes horizontally outward from the outer surface of the side wall portion 59b.

[0196] In the eighth modification, the upper annular portion 51b of the outer cup-shaped body 51 has openings 51e and 51f. The opening 51e allows the scattered processing liquid supplied from the nozzle 32 to flow into the liquid receiving space 60 (see FIG. 1 ). Figure 18 ) circulation.

[0197] This can prevent the scattered processing liquid supplied from the nozzle 32 from directly colliding with the inner peripheral end of the outer cup-shaped body 51. Therefore, according to the eighth modification, it is possible to prevent the processing liquid from rebounding from the inner peripheral end of the outer cup-shaped body 51.

[0198] The opening 51e can be formed, for example, from the vicinity of the nozzle 32 at the inner peripheral end of the outer cup-shaped body 51 to a position where the scattered processing liquid supplied from the nozzle 32 does not directly collide with it. This can prevent the processing liquid from rebounding from the inner peripheral end of the outer cup-shaped body 51 and prevent the processing liquid from flowing from the inner surface 51d (see FIG. Figure 18 )countercurrent.

[0199] Therefore, according to Modification 8, contamination of the wafer W caused by the processing liquid scattering from the wafer W can be further suppressed.

[0200] The opening 51f is formed to allow the nozzle 32 to move between the processing position and the standby position. Specifically, when the nozzle 32 is in the standby position, the nozzle 32 is housed in the opening 51f. On the other hand, when the nozzle 32 is in the processing position, the nozzle 32 is located inward of the opening 51f.

[0201] Here, in Modification 8, as Figure 19 As shown, when the nozzle 32 is in the processing position, the side wall portion 59b can be used to close at least a portion of the opening 51f. As a result, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0202] That is, in Modification 8, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 8, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0203] In addition, in modification example 8, Figure 20 As shown, when the nozzle 32 is in the processing position, the protrusion 59e can be used to close at least a portion of the opening 51f. As a result, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0204] That is, in Modification 8, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 8, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0205] In addition, in modification example 8, Figure 20 As shown in FIG, a slit 59f may be provided between the protruding portion 59e and the side wall portion 59b. This allows a downward flow from the slit 59f to be formed in the space formed below the protruding portion 59e.

[0206] Therefore, according to Modification 8, stagnation of the processing liquid in the space formed below the protruding portion 59 e can be suppressed, and thus contamination of the wafer W by mist of the processing liquid stagnating in the space can be suppressed.

[0207] <Variation 9>

[0208] Figure 21 and Figure 22 : is a perspective view showing the structure of the cover 59 of the modification 9 of the embodiment. Figure 21 This is a perspective view of the nozzle 32 as viewed from the inside. Figure 22 This is a perspective view of the nozzle 32 as viewed from above. Figure 21 and Figure 22 The nozzle 32 is shown in a processing position above the peripheral edge of the wafer W.

[0209] like Figure 21 and Figure 22 As shown, in Modification 9, the areas of the sidewalls 59a and 59c are smaller than those in Modification 8. In this case, as in Modification 8, when the nozzle 32 is in the processing position, at least a portion of the opening 51f is closed by the sidewall 59b, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0210] That is, in Modification 9, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 9, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0211] Furthermore, in Modification 9, similar to Modification 8, when the nozzle 32 is in the processing position, the protrusion 59e can be used to close at least a portion of the opening 51f. Thus, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0212] That is, in Modification 9, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 9, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0213] In Modification 9, similarly to Modification 8, a slit 59f may be provided between the protrusion 59e and the side wall 59b. This allows a downward flow from the slit 59f to be formed in the space below the protrusion 59e.

[0214] Therefore, according to Modification 9, stagnation of the processing liquid in the space formed below the protruding portion 59 e can be suppressed, and thus contamination of the wafer W by mist of the processing liquid stagnating in the space can be suppressed.

[0215] <Variation 10>

[0216] Figure 23 and Figure 24 : is a perspective view showing the structure of the cover 59 of the modification 10 of the embodiment. Figure 23 This is a perspective view of the nozzle 32 as viewed from the inside. Figure 24 This is a perspective view of the nozzle 32 as viewed from above. Figure 23 and Figure 24 The nozzle 32 is shown in a processing position above the peripheral edge of the wafer W.

[0217] like Figure 23 and Figure 24 As shown, in Modification 10, the structures of the sidewalls 59a and 59b are different from those in Modification 8. Specifically, in Modification 10, when the nozzle 32 is not in the processing position but in the standby position, at least a portion of the opening 51f is closed by the sidewall 59a.

[0218] Thus, when the nozzle 32 is in the standby position, the opening area of the opening 51 f can be reduced, and thus the gap area between the wafer W and the outer cup-shaped body 51 can be reduced.

[0219] That is, in Modification 10, when the nozzle 32 is on standby, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 10, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0220] Furthermore, in Modification 10, similar to Modification 8, when the nozzle 32 is in the processing position, the protrusion 59e can be used to close at least a portion of the opening 51f. Thus, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0221] That is, in Modification 10, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 10, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0222] In Modification 10, similarly to Modification 8, a slit 59f may be provided between the protrusion 59e and the side wall 59b. This allows a downward flow from the slit 59f to be formed in the space below the protrusion 59e.

[0223] Therefore, according to Modification 10, stagnation of the processing liquid in the space formed below the protruding portion 59 e can be suppressed, and thus contamination of the wafer W by mist of the processing liquid stagnating in the space can be suppressed.

[0224] <Variation 11>

[0225] Figure 25 and Figure 26 : is a perspective view showing the structure of the cover 59 of the modification 11 of the embodiment. Figure 25 This is a perspective view of the nozzle 32 as viewed from the inside. Figure 26 This is a perspective view of the nozzle 32 as viewed from above. Figure 25 and Figure 26 The nozzle 32 is shown in a processing position above the peripheral edge of the wafer W.

[0226] like Figure 25 and Figure 26As shown, in Modification 11, the structures of sidewalls 59a and 59b are different from those in Modifications 8 and 10. Specifically, in Modification 11, since the areas of sidewalls 59a and 59b are small, the entire opening 51f cannot be closed by sidewalls 59a and 59b.

[0227] Thus, when the nozzle 32 is in the processing position or the standby position, the opening area of the opening 51 f can be reduced to a certain extent, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51 .

[0228] That is, in Modification 11, the flow rate of the spiral flow of the wafer W in the gap between the wafer W and the outer cup-shaped body 51 can be increased to a certain extent, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 11, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0229] Furthermore, in Modification 11, similar to Modification 8, when the nozzle 32 is in the processing position, the protrusion 59e can be used to close at least a portion of the opening 51f. Thus, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0230] That is, in Modification 11, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 11, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0231] In Modification 11, similarly to Modification 8, a slit 59f may be provided between the protrusion 59e and the side wall 59b. This allows a downward flow from the slit 59f to be formed in the space below the protrusion 59e.

[0232] Therefore, according to Modification 11, stagnation of the processing liquid in the space formed below the protruding portion 59 e can be suppressed, and thus contamination of the wafer W by mist of the processing liquid stagnating in the space can be suppressed.

[0233] <Variation 12>

[0234] Figure 27 : is a perspective view showing the structure of the cover 59 of the modification 12 of the embodiment. Figure 27FIG. 1 is a perspective view of the nozzle 32 as viewed from above, showing a state where the nozzle 32 is in a processing position above the peripheral edge of the wafer W. FIG.

[0235] like Figure 27 As shown, in Modification 12, unlike Modification 11, no slit 59f is provided in cover 59. Thus, by providing sidewalls 59a and 59b in cover 59, the gap area between wafer W and outer cup 51 can be reduced.

[0236] That is, in Modification 12, the flow rate of the spiral flow of the wafer W in the gap between the wafer W and the outer cup-shaped body 51 can be increased to a certain extent, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 12, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0237] Furthermore, in Modification 12, similar to Modification 11, when the nozzle 32 is in the processing position, the protrusion 59e can be used to close at least a portion of the opening 51f. Thus, when the nozzle 32 is in the processing position, the opening area of the opening 51f can be reduced, thereby reducing the gap area between the wafer W and the outer cup-shaped body 51.

[0238] That is, in Modification 12, during liquid processing of the wafer W, the flow rate of the spiral flow of the wafer W can be increased in the gap between the wafer W and the outer cup-shaped body 51, thereby suppressing the backflow of the processing liquid remaining on the inner surface 51 d and the mist of the processing liquid stagnating in the liquid receiving space 60 to the wafer W. Therefore, according to Modification 12, contamination of the wafer W by the backflow of the processing liquid can be suppressed.

[0239] The substrate processing device 1 of the embodiment includes a substrate rotating part 20, an outer cup-shaped body 51, an inner cup-shaped body 52, an annular drainage part 64 and an exhaust passage 62. The substrate rotating part 20 holds the substrate (wafer W) and rotates it. The outer cup-shaped body 51 covers the periphery of the substrate (wafer W) held by the substrate rotating part 20 in an annular shape. The inner cup-shaped body 52 is arranged on the inner side of the outer cup-shaped body 51 and is arranged below the substrate (wafer W) held by the substrate rotating part 20. The annular drainage part 64 is formed between the outer cup-shaped body 51 and the inner cup-shaped body 52, and discharges the processing liquid supplied to the substrate (wafer W) to the outside. The exhaust passage 62 is formed on the inner side of the inner cup-shaped body 52. The inner cup-shaped body 52 has an exhaust hole 61 that connects the liquid receiving space 60 formed by the inner cup-shaped body 52 and the outer cup-shaped body 51 with the exhaust passage 62. The exhaust hole 61 is formed obliquely downward from the outer surface 52c to the inner surface 52d of the inner cup-shaped body 52. This can prevent the wafer W from being contaminated by mist of the processing liquid accumulated around the wafer W.

[0240] Furthermore, in the substrate processing apparatus 1 of the embodiment, the inner cup-shaped body 52 includes an inclined portion 52a that gradually descends as it moves outward, and a vertical portion 52b that extends vertically from the outer peripheral end of the inclined portion 52a toward the annular liquid drain portion 64. Furthermore, the exhaust hole 61 is disposed in the vertical portion 52b. This allows for the effective separation of the processing liquid that descends along the inner cup-shaped body 52.

[0241] Furthermore, in the substrate processing apparatus 1 of the embodiment, the outer cup-shaped body 51 includes an upper annular member 54 whose inner surface is inclined along the inclined portion 52a of the inner cup-shaped body 52. Furthermore, the inner surface of the upper annular member 54 includes a hydrophobic surface (surface 55c) having a predetermined width at the inner circumference when viewed from above, and a hydrophilic surface (inner surface 55a) located outside the hydrophobic surface (surface 55c). This prevents contamination of the wafer W by processing liquid flowing back from the inner surface of the upper annular member 54.

[0242] The substrate processing apparatus 1 of the embodiment further includes a processing liquid nozzle (nozzle 32) that is movable in the horizontal direction and capable of supplying processing liquid to the substrate (wafer W) held by the substrate rotating unit 20. Furthermore, the outer cup-shaped body 51 includes an opening 51f formed to enable the processing liquid nozzle (nozzle 32) to move between a processing position above the peripheral edge of the substrate (wafer W) and a standby position further outward from the processing position. Furthermore, the processing liquid nozzle (nozzle 32) includes a cover 59 that closes at least a portion of the opening 51f. This prevents contamination of the wafer W by backflowing processing liquid.

[0243] In the substrate processing apparatus 1 of the embodiment, the cover 59 includes sidewalls 59a, 59b, and 59c and an upper wall 59d. The sidewalls 59a, 59b, and 59c are positioned adjacent to the sides of the processing liquid nozzle (nozzle 32). The upper wall 59d is positioned above the processing liquid nozzle (nozzle 32). This prevents contamination of the wafer W by backflowing processing liquid.

[0244] Furthermore, in the substrate processing apparatus 1 of the embodiment, the side wall portion 59b is disposed outside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20. When the processing liquid nozzle (nozzle 32) is in the processing position, the side wall portion 59b closes at least a portion of the opening 51f. This prevents contamination of the wafer W by backflowing processing liquid.

[0245] Furthermore, in the substrate processing apparatus 1 of the embodiment, the side wall portion 59a is disposed inside the processing liquid nozzle (nozzle 32) when viewed from the center of the substrate rotating unit 20, and closes at least a portion of the opening 51f when the processing liquid nozzle (nozzle 32) is in the standby position. This can suppress contamination of the wafer W by backflowing processing liquid.

[0246] In the substrate processing apparatus 1 of the embodiment, the inner surface 51d of the outer cup 51 has a horizontal portion 51d1 extending horizontally outward from the portion closest to the substrate (wafer W). This can suppress contamination of the wafer W by backflowing processing liquid.

[0247] The substrate processing apparatus 1 of the embodiment further includes a cleaning liquid nozzle 46 for supplying cleaning liquid CL to the annular drain portion 64. The annular drain portion 64 also has a drain port 64a on its bottom surface at a position opposite to where the cleaning liquid nozzle 46 is provided. This allows the entire annular drain portion 64 to be cleaned satisfactorily.

[0248] In the substrate processing apparatus 1 of the embodiment, the annular drain portion 64 has an inclined portion with the drain port 64a located at the lowest point, thereby enabling the entire annular drain portion 64 to be cleaned satisfactorily.

[0249] The substrate processing apparatus 1 of the embodiment further includes a control unit 12 for controlling various units. Furthermore, the control unit 12 supplies cleaning liquid CL from the cleaning liquid nozzle 46 to the annular liquid drain 64 after the previous substrate (wafer W) has been processed with the processing liquid and before the next substrate (wafer W) is processed with the processing liquid. Thus, even if the amount of processing liquid mist remaining in the liquid receiving space 60 temporarily increases during the cleaning process of the liquid drain, contamination of the wafer W can be suppressed.

[0250] The substrate processing apparatus 1 of the embodiment further includes a control unit 12 for controlling various components. Furthermore, the control unit 12 supplies cleaning liquid CL from the cleaning liquid nozzle 46 to the annular drain 64 at the same timing as the supply of the rinse liquid from the nozzle 32 to the substrate (wafer W). This shortens the overall processing time for the wafer W.

[0251] Furthermore, the substrate processing method of the embodiment includes a step (step S111) of supplying cleaning liquid CL to the annular drain portion 64 in the aforementioned substrate processing apparatus 1. In this step (step S111) of supplying cleaning liquid CL, cleaning liquid CL is supplied from the cleaning liquid nozzle 46 to the annular drain portion 64 after the previous substrate (wafer W) has been processed with the processing liquid and before the next substrate (wafer W) is processed with the processing liquid. Thus, even if the amount of processing liquid mist remaining in the liquid receiving space 60 temporarily increases during the drain portion cleaning process, contamination of the wafer W can be suppressed.

[0252] Furthermore, the substrate processing method of the embodiment includes a step (step S121) of supplying cleaning liquid CL to the annular drain portion 64 in the aforementioned substrate processing apparatus 1. This step (step S121) of supplying cleaning liquid CL is performed by supplying cleaning liquid CL from the cleaning liquid nozzle 46 to the annular drain portion 64 at the same timing as the step (step S103) of supplying the rinse liquid from the nozzle 32 to the substrate (wafer W). This shortens the overall processing time of the wafer W.

[0253] As mentioned above, although each embodiment of the present invention has been described, the present invention is not limited to the above-mentioned each embodiment, and various changes can be made without departing from the scope of the present invention.

[0254] The embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. In fact, the above embodiments can be implemented in a variety of ways. In addition, the above embodiments can be omitted, replaced, or modified in various ways without departing from the scope of the invention and its purpose.

[0255] Description of Reference Numerals

[0256] W wafer (an example of a substrate)

[0257] 1. Substrate processing device

[0258] 12 Control Unit

[0259] 20 substrate rotating unit

[0260] 32 nozzles

[0261] 46 Washing fluid nozzle

[0262] 50 Recycling Department

[0263] 51 Lateral cup

[0264] 51d inner surface

[0265] 51d1 horizontal part

[0266] 51f opening

[0267] 52 medial cup

[0268] 52a inclined portion

[0269] 52b plumb part

[0270] 52c outer surface

[0271] 52d inner surface

[0272] 53 cup-shaped body base

[0273] 53a Inner surface

[0274] 54 Upper ring part

[0275] 55 First Part

[0276] 55a Inner surface (an example of a hydrophilic surface)

[0277] 56 Second Part

[0278] 56a Surface (an example of a hydrophobic surface)

[0279] 56b Support portion

[0280] 56c Return

[0281] 59 Cover

[0282] 59a, 59b, 59c side wall portions

[0283] 59d upper wall

[0284] 59e protrusion

[0285] 60 Liquid holding space

[0286] 61 exhaust vent

[0287] 62 Exhaust passage

[0288] 63 exhaust port

[0289] 64 annular drainage part

[0290] 64a drain port

[0291] 64b Cleaning fluid supply unit

[0292] CL cleaning fluid.

Claims

1. A substrate processing device, characterized in that: include: a substrate rotating portion that holds and rotates the substrate; an outer cup-shaped body annularly covering the periphery of the substrate held by the substrate rotating portion; an inner cup-shaped body disposed inside the outer cup-shaped body and disposed below the substrate held by the substrate rotating portion; a heating mechanism disposed between the substrate rotating portion and the inner cup-shaped body; an annular drain portion formed between the outer cup-shaped body and the inner cup-shaped body and configured to discharge the processing liquid supplied to the substrate to the outside; and An exhaust passage is formed inside the inner cup-shaped body. The inner cup-shaped body has an exhaust hole that connects the liquid receiving space formed by the inner cup-shaped body and the outer cup-shaped body with the exhaust passage. The exhaust hole is formed obliquely downward from the outer surface of the inner cup-shaped body to the inner surface.

2. The substrate processing device according to claim 1, wherein: The inner cup-shaped body includes: an inclined portion that gradually descends as it goes outward; and a vertical portion extending in a vertical direction from an outer peripheral end of the inclined portion toward the annular drainage portion. The exhaust hole is arranged in the vertical portion.

3. The substrate processing device according to claim 2, wherein: The outer cup-shaped body has an upper annular member whose inner surface is inclined along the inclined portion of the inner cup-shaped body. The inner surface of the upper annular member includes a hydrophobic surface having a predetermined width at an inner peripheral end in a plan view and a hydrophilic surface located outside the hydrophobic surface.

4. The substrate processing device according to any one of claims 1 to 3, characterized in that: The substrate rotating unit further includes a treatment liquid nozzle, the treatment liquid nozzle being movable in a horizontal direction and being capable of supplying treatment liquid to the substrate held by the substrate rotating unit. The outer cup-shaped body has an opening formed to enable the processing liquid nozzle to move between a processing position above the peripheral edge of the substrate and a standby position outside the processing position. The processing liquid nozzle includes a cover that closes at least a portion of the opening.

5. The substrate processing device according to claim 4, wherein: The cover has a side wall portion and an upper wall portion, The side wall portion is arranged close to the side of the treatment liquid nozzle, The upper wall portion is arranged above the processing liquid nozzle.

6. The substrate processing device according to claim 5, wherein: The side wall portion is arranged outside the processing liquid nozzle when viewed from the center of the substrate rotating portion, and closes at least a portion of the opening portion when the processing liquid nozzle is in the processing position.

7. The substrate processing device according to claim 5, wherein: The side wall portion is disposed inside the processing liquid nozzle when viewed from the center of the substrate rotating portion, and closes at least a portion of the opening when the processing liquid nozzle is in the standby position.

8. The substrate processing device according to any one of claims 1 to 3, characterized in that: The inner surface of the outer cup-shaped body has a horizontal portion extending horizontally outward from a portion closest to the substrate.

9. The substrate processing device according to any one of claims 1 to 3, characterized in that: It also includes a cleaning liquid nozzle for supplying cleaning liquid to the annular liquid discharge portion, The annular drain portion has a drain port on a bottom surface at a position opposite to a position where the cleaning liquid nozzle is provided.

10. The substrate processing device according to claim 9, wherein: The annular drain portion has an inclined portion that positions the drain port at the lowest position.

11. The substrate processing apparatus according to claim 9, wherein: It also includes a control unit that controls each unit. The control unit supplies the cleaning liquid from the cleaning liquid nozzle to the annular liquid discharge unit after the previous substrate is processed with the processing liquid and before the next substrate is processed with the processing liquid.

12. The substrate processing apparatus according to claim 9, wherein: It also includes a control unit that controls each unit. The control unit supplies the cleaning liquid from the cleaning liquid nozzle to the annular drain portion at the same timing as the process of supplying the rinse liquid from the nozzle to the substrate.

13. A substrate processing method, characterized in that: The substrate processing device includes: a substrate rotating portion that holds and rotates the substrate; an outer cup-shaped body annularly covering the periphery of the substrate held by the substrate rotating portion; an inner cup-shaped body disposed inside the outer cup-shaped body and disposed below the substrate held by the substrate rotating portion; an annular liquid drain portion formed between the outer cup-shaped body and the inner cup-shaped body for draining the processing liquid supplied to the substrate to the outside; an exhaust passage formed inside the inner cup-shaped body; and a cleaning liquid nozzle for supplying cleaning liquid to the annular liquid discharge portion; The inner cup-shaped body has an exhaust hole that connects the liquid receiving space formed by the inner cup-shaped body and the outer cup-shaped body with the exhaust passage. The exhaust hole is formed obliquely downward from the outer surface of the inner cup-shaped body to the inner surface. The substrate processing method comprises: In the substrate processing apparatus, the step of supplying the cleaning liquid from the cleaning liquid nozzle to the annular liquid discharge portion includes the step of supplying the cleaning liquid after the previous substrate is processed with the processing liquid and before the next substrate is processed with the processing liquid.

14. A substrate processing method, characterized in that: The substrate processing device includes: a substrate rotating portion that holds and rotates the substrate; an outer cup-shaped body annularly covering the periphery of the substrate held by the substrate rotating portion; an inner cup-shaped body disposed inside the outer cup-shaped body and disposed below the substrate held by the substrate rotating portion; an annular liquid drain portion formed between the outer cup-shaped body and the inner cup-shaped body for draining the processing liquid supplied to the substrate to the outside; an exhaust passage formed inside the inner cup-shaped body; and a cleaning liquid nozzle for supplying cleaning liquid to the annular liquid discharge portion; The inner cup-shaped body has an exhaust hole that connects the liquid receiving space formed by the inner cup-shaped body and the outer cup-shaped body with the exhaust passage. The exhaust hole is formed obliquely downward from the outer surface of the inner cup-shaped body to the inner surface. The substrate processing method comprises: The substrate processing apparatus further includes supplying a cleaning liquid from the cleaning liquid nozzle to the annular drain portion at the same timing as supplying the rinse liquid from the nozzle to the substrate.

Images