A heating apparatus for growing silicon carbide wafers

Abstract

The application discloses a heating device for silicon carbide wafer growth and particularly relates to the technical field of silicon carbide wafer processing, comprising an annealing box, a heat insulation plate is fixedly connected in the annealing box, and the inner cavity of the annealing box is divided into a cooling cavity and a heating cavity by the heat insulation plate; the heating device further comprises a wafer loading structure, a chain lifting unit and a cooling flow element; the number of the wafer loading structure is one pair, the wafer loading structure comprises a support, a pair of sealing seats fixedly connected to the two ends of the support and mirror-imaged arranged and a loading cylinder fixedly connected to the inner side of the support; a material moving channel for sealing of the sealing seat is arranged on the heat insulation plate, a cooling channel is arranged in the loading cylinder, and the two ends of the cooling channel extend to the outer surface of the loading cylinder. The application solves the problem that the skin of a person may be scalded due to high temperature in the furnace during the taking and placing process of the silicon carbide wafer heating; the silicon carbide wafer heated at high temperature is cooled to room temperature through a natural cooling mode, and the processing efficiency of the silicon carbide wafer is affected.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon carbide wafer processing technology, and more particularly to a heating device for growing silicon carbide wafers. BACKGROUND

[0002] In the process of growing SiC single crystals, in order to expand the size of the single crystal, improve the quality of the single crystal, and reduce the crystal defects, etc., the crystal growth interface is usually required to be micro-convex. Due to the micro-convex growth interface, the growth rate of the central region of the crystal is faster than that of the edge region, that is, the axial temperature gradient of the central region is greater than that of the edge region, resulting in different growth rates and growth times of the crystal on the same plane parallel to the seed, and further causing stress in the crystal. In addition, the crystal will also undergo subsequent processing steps such as cutting and grinding, which will introduce surface stress. Therefore, during the processing of the crystal, the silicon carbide wafer (referred to as wafer) needs to be annealed to reduce the stress of the wafer.

[0003] At present, the silicon carbide wafer is usually annealed by an annealing furnace. Specifically, the silicon carbide wafers are stacked together and placed in a crucible, and then the crucible is placed vertically in the annealing furnace for heating annealing of the wafers.

[0004] The existing silicon carbide wafers are mostly heated and annealed by using a conventional annealing furnace, and the crucible loaded with the silicon carbide wafers needs to be manually taken out and placed. Since the annealing temperature can reach 2000℃, the high temperature in the furnace can cause burns on the skin of the workers during the taking and placing process, and there is a certain risk in the processing. In addition, the silicon carbide wafers heated at high temperature are cooled to room temperature by natural cooling, which prolongs the annealing time of the subsequent silicon carbide wafers and affects the processing efficiency of the silicon carbide wafers. Therefore, how to reasonably solve these problems needs to be considered. SUMMARY

[0005] In order to overcome the above-mentioned defects of the prior art, the embodiments of the present application provide a heating device for growing silicon carbide wafers. The heating device only needs to alternately place the crucible with the silicon carbide wafers in the loading cylinder at two work positions to control the staggered lifting movement of the pair of loading cylinders. Under the condition of effective high-temperature annealing of the silicon carbide wafers, the inlet position of the heating cavity is automatically blocked to take and place the silicon carbide wafers, which can avoid the harm to the workers caused by high heating temperature. The lifting position of the crucible can be automatically matched with the water cooling facility to quickly cool to room temperature. Through the alternation of the silicon carbide wafer annealing and cooling processes at the two work positions, the annealing efficiency of the silicon carbide wafers can be effectively improved.

[0006] To achieve the above object, the application provides the following technical scheme: a heating device for growing silicon carbide wafers, comprising an annealing box, a heat insulation plate fixedly connected in the annealing box, and a cooling cavity and a heating cavity separated by the heat insulation plate in the inner cavity of the annealing box;

[0007] A wafer loading structure, the number of which is one pair, comprises a support, a pair of blocking seats fixedly connected at both ends of the support and mirror-imaged, and a loading cylinder fixedly connected to the inner side of the support;

[0008] The heat insulation plate is provided with a material moving channel for blocking the blocking seat, the loading cylinder is provided with a cooling channel, and both ends of the cooling channel extend to the outer surface of the loading cylinder, and the inner side of the loading cylinder is movably provided with a crucible for placing the silicon carbide wafer;

[0009] A chain lifting unit is provided in the cooling cavity, and a pair of lifting rods are fixedly connected to the chain lifting unit, and the chain lifting unit drives a pair of loading cylinders to staggered lift through the corresponding lifting rods;

[0010] Two pairs of cooling flow members are vertically arranged in a group, and the cooling flow member comprises an outer connecting pipe, a sealing ring seamlessly connected to one end of the outer connecting pipe, and an inner connecting pipe slidingly connected in the outer connecting pipe, the inner connecting pipe is slidingly connected to the sealing ring, and the distance between the centers of the adjacent two outer connecting pipes is the same as the distance between the two ends of the cooling channel;

[0011] A linear telescopic structure, the number of which is one pair, and two outer connecting pipes are correspondingly arranged on one linear telescopic structure, the linear telescopic structure is movably arranged on the heat insulation plate, and the chain lifting unit is provided with a extrusion round head rod for movably abutting against the linear telescopic structure;

[0012] When the blocking seat at the bottom is arranged in the material moving channel on the heat insulation plate, the outer connecting pipe is horizontally corresponding and close to the port position of the cooling channel, and when the blocking seat at the top is arranged in the material moving channel on the heat insulation plate, the outer connecting pipe is horizontally corresponding and away from the port position of the cooling channel.

[0013] In a preferred embodiment, the annealing box is rotatably connected with a sealing box door through a hinge, and the sealing box door is horizontally corresponding on one side of the cooling cavity, and the heat insulation plate is fixedly connected with a baffle.

[0014] In a preferred embodiment, the chain lifting unit comprises a pair of rotating seats fixedly connected to the inner top and bottom of the cooling cavity, a flywheel rotatably connected to each rotating seat, a transmission chain drivingly connected to the pair of flywheels, and a motor fixedly connected to one of the rotating seats for driving the flywheels to rotate, a pair of lifting rods fixedly connected to the chain plates of the transmission chain, and the lifting rods being fixedly connected to the blocking seats located at the top.

[0015] In a preferred embodiment, a light rod I for sliding of the lifting rods is fixedly connected to the heat insulation plate.

[0016] In a preferred embodiment, a graphite sealing ring is fixedly connected to the end of the outer connecting pipe opposite to the sealing ring, the inner connecting pipe is fixedly penetrated through the annealing box, the graphite sealing ring is in the same straight line with the port of the cooling channel, and the cooling channel is spirally arranged.

[0017] In a preferred embodiment, a butt joint plane is arranged on the outer surface of the carrier cylinder, the port of the cooling channel is arranged on the butt joint plane, and the graphite sealing ring is in sliding contact with the butt joint plane.

[0018] In a preferred embodiment, a guide plate is fixedly connected to the blocking seats located at the top and the carrier cylinder, and the graphite sealing ring is in sliding contact with the guide plate.

[0019] In a preferred embodiment, the straight line telescopic structure comprises a fixed frame, a telescopic rod fixedly connected to the fixed frame, a compression spring sleeved on the telescopic rod, and an inclined seat fixedly connected to the fixed frame, the fixed frame is fixedly connected to a pair of outer connecting pipes, the end of the telescopic rod opposite to the fixed frame is fixedly connected to the inner wall of the annealing box, and the inclined seat is slidingly connected to the heat insulation plate.

[0020] In a preferred embodiment, a sliding seat is fixedly connected to the bottom of the inclined seat, the sliding seat is slidingly connected to the heat insulation plate, a sliding inclined surface is arranged at the top of the inclined seat, an extrusion round head rod is fixedly connected to the transmission chain of the chain lifting unit, and the extrusion round head rod is slidingly connected to the inclined seat.

[0021] In a preferred embodiment, a light rod II for sliding of the extrusion round head rod is fixedly connected to the heat insulation plate.

[0022] Technical effects and advantages of the present application:

[0023] 1. The heating device for growing silicon carbide wafer of the present application, which provides two processing positions for silicon carbide wafer by using two wafer loading structures, controls the wafer loading structure to drop into the heating cavity by putting the crucible with silicon carbide wafer into the wafer loading structure, and makes the two wafer loading structures adapt to the heat insulation plate to cut off the heating cavity, so that the silicon carbide wafer can be subjected to stress relief heating treatment with reduced heat source loss, and the crucible with silicon carbide wafer is controlled to rise into the cooling cavity, and the wafer loading structure in the other position can load the silicon carbide wafer to be heated into the heating cavity, so that the heating cavity can be effectively sealed during the taking and placing of the crucible, and the high temperature of the heating cavity will not cause harm to the personnel.

[0024] 2. The heating device for growing silicon carbide wafer of the present application, which is provided with a cooling flow member and a linear extension structure, and when the wafer loading structure takes out the heated crucible and moves to the cooling cavity, the abutting cooperation of the extruded round head rod and the linear extension structure can make a pair of cooling flow members abut against the loading cylinder with a cooling channel, the cooling flow member is used as a pipe structure for the inlet and outlet flow of cooling water, and the cooling water is circulated in the cooling channel, so that the crucible arranged in the loading cylinder can be surrounded and cooled by water, thereby improving the efficiency of cooling the silicon carbide wafer to room temperature.

[0025] It is worth noting that the annealing processing of the silicon carbide wafer is carried out by setting two wafer loading structures, and the two wafer loading structures are controlled to move up and down alternately, so that the two silicon carbide wafers can be subjected to heating and cooling processes in succession, the heating safety and cooling efficiency are improved, the annealing time of the silicon carbide wafer in the device is maximally shortened, the processing capacity is also improved, and the efficiency and capacity of the production and processing of the silicon carbide wafer can be met. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a whole structure schematic view of the heating device for growing silicon carbide wafer of the present application.

[0027] Figure 2 It is a whole structure schematic view of the heating device for growing silicon carbide wafer of the present application. Figure 1

[0028] Figure 3 It is a whole structure schematic view of the heating device for growing silicon carbide wafer of the present application. Figure 2

[0029] Figure 4 It is a structure schematic view of the wafer loading structure of the present application.

[0030] Figure 5 It is a structure schematic view of the loading cylinder of the present application.

[0031] Figure 6 ​​Structure schematic diagram of chain lifting unit of the present application.

[0032] Figure 7 Structure schematic diagram of cooling flow unit of the present application.

[0033] Figure 8 Cooperation diagram of linear telescopic structure and transmission chain of the present application.

[0034] The reference signs are: 1, annealing box; 2, heat insulation plate; 3, sealing box door; 4, wafer loading structure; 41, support; 42, plugging seat; 43, loading cylinder; 431, cooling channel; 5, crucible; 6, chain lifting unit; 61, rotating seat; 62, flywheel; 63, transmission chain; 64, motor; 7, lifting rod; 8, cooling flow unit; 81, outer connecting pipe; 82, sealing ring; 83, inner connecting pipe; 9, linear telescopic structure; 91, fixing frame; 92, telescopic rod; 93, compression spring; 94, inclined seat; 10, extruded round head rod; 11, butt joint plane; 111, guide plate; 12, graphite sealing ring; 13, light pole one; 14, sliding seat; 15, light pole two; 16, baffle. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0036] In combination with reference Figures 1-3 The present application provides a heating device for growing silicon carbide wafer, which comprises an annealing box 1, the annealing box 1 is fixedly connected with a heat insulation plate 2, the inner cavity of the annealing box 1 is divided into a cooling cavity and a heating cavity by the heat insulation plate 2, and a heating element can be arranged in the heating cavity; the annealing box 1 is divided, and the heating treatment of the silicon carbide wafer is realized by moving the loading and unloading, so that the harm of high temperature heating to the workers can be avoided.

[0037] A sealing box door 3 is rotatably connected to the annealing box 1 by a hinge, and the sealing box door 3 is horizontally arranged on one side of the cooling cavity, the sealing box door 3 can be used for opening and closing the position of the cooling cavity, so as to take and place the silicon carbide wafer, the heat insulation plate 2 is fixedly connected with a baffle 16, the baffle 16 is arranged at a position that can realize the partition of the cooling cavity, so that other structures can be arranged on the inner side of the baffle 16, which is more beautiful and safe.

[0038] The above-mentioned heating device for growing silicon carbide wafer further comprises a wafer loading structure 4, a chain lifting unit 6 and a cooling flow unit 8.

[0039] In combination with referenceFigure 4 The number of wafer loading structures 4 is one pair, the wafer loading structure 4 comprises a support 41, a pair of sealing seats 42 fixedly connected at both ends of the support 41 and mirror-imaged arranged, and a loading cylinder 43 fixedly connected at the inner side of the support 41, the sealing seat 42 is arranged in a bowl-shaped structure, and the heat insulation plate 2 is provided with a material moving channel for sealing of the sealing seat 42, the material moving channel is two, and the material moving channel can be used for the heating of the silicon carbide wafer to enter and exit.

[0040] In combination with reference to Figure 5 The loading cylinder 43 is provided with a cooling channel 431, the cooling channel 431 can be used for circulating cooling water, and both ends of the cooling channel 431 extend to the outer surface of the loading cylinder 43, the inner side of the loading cylinder 43 movably arranged has a crucible 5 for placing the silicon carbide wafer, when the sealing seat 42 at the top is arranged in the material moving channel, at this time, the crucible 5 is located below the heat insulation plate 2, then the loading cylinder 43 can carry the crucible 5 into the heating cavity for stress relief heating treatment, similarly, when the sealing seat 42 at the bottom is arranged in the material moving channel, at this time, the crucible 5 is located above the heat insulation plate 2, then the crucible 5 can be in a state of being taken out.

[0041] In combination with reference to Figure 6 The chain lifting unit 6 is arranged in the cooling cavity, a pair of lifting rods 7 are fixedly connected to the chain lifting unit 6, the chain lifting unit 6 drives the pair of loading cylinders 43 to staggered lift through the corresponding lifting rods 7, the chain lifting unit 6 comprises a pair of rotating seats 61 fixedly connected to the inner top and bottom of the cooling cavity, a flywheel 62 rotatably connected to each rotating seat 61, a transmission chain 63 transmissionally connected to the pair of flywheels 62, and a motor 64 fixedly connected to one of the rotating seats 61 for driving the flywheel 62 to rotate, the pair of lifting rods 7 are fixedly connected to the link plates of the transmission chain 63, the lifting rod 7 is fixedly connected to the sealing seat 42 at the top, and the motor 64 in the application is a reversible motor, so the transmission chain 63 needs to rotate reversibly.

[0042] The heat insulation plate 2 is fixedly connected with a light rod I 13 for sliding of the lifting rod 7, the light rod I 13 can be used for guiding and sliding of the lifting rod 7, so that the stability of the movement of the lifting rod 7 can be improved.

[0043] Specifically, by placing the crucible 5 with the silicon carbide wafer in one of the loading cylinders 43, controlling the motor 64 to rotate, and the flywheel 62 to drive the transmission chain 63 to move in the path, the lifting rod 7 on the transmission chain 63 can drive one of the loading cylinders 43 into the heating cavity, and the other loading cylinder 43 rises to the cooling cavity, at this time, the corresponding sealing seats 42 on the two loading cylinders 43 can be sealed on the material moving channel, so as to realize the sealing of the communication between the heating cavity and the cooling cavity, so as to reduce the loss of heat in the heating cavity, at the same time, the operating temperature in the cooling cavity is relatively safe, because personnel do not need to approach the position of the heating cavity to take and place the crucible 5, so that the taking and placing of the crucible 5 can avoid high temperature and cause harm to personnel.

[0044] With reference to Figure 7 The quantity of the cooling flow passages 8 is two pairs, and each pair is vertically arranged as a group. The cooling flow passage 8 comprises an outer connecting pipe 81, a sealing ring 82 seamlessly connected to one end of the outer connecting pipe 81, and an inner connecting pipe 83 slidingly connected in the outer connecting pipe 81. The inner connecting pipe 83 is slidingly connected to the sealing ring 82. The distance between the centers of the adjacent two outer connecting pipes 81 is the same as the distance between the two ends of the cooling channel 431. In this application, one pair of the vertically arranged cooling flow passages 8 can be used for the inflow and outflow of cooling water, respectively. That is, one pair of the vertically arranged inner connecting pipes 83 can be externally connected to the pump body for the inflow and outflow of cooling water. The inner connecting pipe 83 and the outer connecting pipe 81 are connected through dynamic sealing of the sealing ring 82, which can achieve the effect of expansion and contraction to follow the movement of the position of the carrier cylinder 43.

[0045] The end of the outer connecting pipe 81 away from the sealing ring 82 is fixedly connected with a graphite sealing ring 12. The graphite sealing ring 12 can have the effects of high temperature resistance and sealing. The end of the inner connecting pipe 83 away from the outer connecting pipe 81 is fixedly penetrated into the annealing box 1. The graphite sealing ring 12 is on the same straight line as the port of the cooling channel 431. The cooling channel 431 is spirally arranged. The spiral arrangement of the cooling channel 431 can increase the cooling area, so that the circulating cooling water in the cooling channel 431 can effectively wrap the crucible 5, thereby improving the cooling efficiency of the silicon carbide wafer in the micro-liquid state in the crucible 5.

[0046] The outer surface of the carrier cylinder 43 is provided with a butt joint plane 11. The port of the cooling channel 431 is arranged on the butt joint plane 11. The graphite sealing ring 12 is in sliding contact with the butt joint plane 11. The arrangement of the butt joint plane 11 can make the graphite sealing ring 12 horizontally butt joint the port of the cooling channel 431, thereby ensuring that the cooling water can effectively circulate in the cooling channel 431.

[0047] The top blocking seat 42 and the carrier cylinder 43 are fixedly connected with a guide plate 111. The graphite sealing ring 12 is in sliding contact with the guide plate 111. In this application, the end of the guide plate 111 close to the blocking seat 42 is arc-shaped, which can avoid the blocking seat 42 blocking the movement of the graphite sealing ring 12.

[0048] Specifically, when the corresponding graphite sealing ring 12 of one pair of outer connecting pipes 81 butt joints the two ends of the cooling channel 431, the carrier cylinder 43 is located in the cooling cavity, and the silicon carbide wafer is in the heated state to be taken out. The inflow and outflow of cooling water in the pair of inner connecting pipes 83 are controlled by the external pump body. The circulating cooling water in the cooling channel 431 can promote the cooling of the silicon carbide wafer in the crucible 5.

[0049] With reference to Figure 8The number of the linear telescopic structure 9 is one pair, two outer connecting pipes 81 are correspondingly arranged on one linear telescopic structure 9, the linear telescopic structure 9 is movably arranged on the heat insulation plate 2, the chain lifting unit 6 is provided with an extrusion round head rod 10 for movably abutting against the linear telescopic structure 9, the linear telescopic structure 9 comprises a fixed frame 91, a telescopic rod 92 fixedly connected to the fixed frame 91, a compression spring 93 sleeved on the telescopic rod 92 and an inclined seat 94 fixedly connected to the fixed frame 91, the fixed frame 91 is fixedly connected to the pair of outer connecting pipes 81, one end of the telescopic rod 92 away from the fixed frame 91 is fixedly connected to the inner wall of the annealing box 1, and the inclined seat 94 is slidably connected to the heat insulation plate 2.

[0050] The bottom of the inclined seat 94 is fixedly connected with a sliding seat 14, the sliding seat 14 enables the inclined seat 94 to slide on the heat insulation plate 2, the sliding seat 14 is slidably connected to the heat insulation plate 2, the top of the inclined seat 94 is provided with a sliding inclined surface, the extrusion round head rod 10 is fixedly connected to the transmission chain 63, and the extrusion round head rod 10 is slidably connected to the inclined seat 94; the top of the inclined seat 94 is a sliding inclined surface, one side of the inclined seat 94 is a sliding vertical surface, and the extrusion round head rod 10 can move on the sliding inclined surface and the sliding vertical surface; when the extrusion round head rod 10 is at the end of the sliding inclined surface, the graphite sealing ring 12 can be butted at the port position of the cooling channel 431 at this time; when the extrusion round head rod 10 is on the sliding vertical surface, the graphite sealing ring 12 is away from the port position of the cooling channel 431 at this time, that is, the cooling operation is stopped.

[0051] The heat insulation plate 2 is fixedly connected with a light rod two 15 for sliding of the extrusion round head rod 10, the light rod two 15 can stabilize the extrusion round head rod 10 fixed on the transmission chain 63, and the light rod two 15 can provide sliding guidance for the extrusion round head rod 10 when the transmission chain 63 drives the extrusion round head rod 10 to move vertically.

[0052] Specifically, when the heated crucible 5 is moved to the cooling cavity, at this time, the extrusion round head rod 10 is located at the sliding vertical surface position, the upward movement of the extrusion round head rod 10 can gradually move to the sliding inclined surface, so that the inclined seat 94 can slide to the position facing the transmission chain 63, at this time, the compression spring 93 is in an elastic release state, the telescopic rod 92 is in an extended state, the outer connecting pipe 81 is in a state of sliding outward on the inner connecting pipe 83, the graphite sealing ring 12 on the outer connecting pipe 81 can slide on the guide plate 111 and the butt plane 11 until the port of the cooling channel 431 is butted, so that the circulation of cooling water in the pair of inner connecting pipes 83 is realized by the external pump body, and the cooling channel 431 can provide circulating cooling water for cooling of the crucible 5.

[0053] Similarly, when the carrier cylinder 43 drives the crucible 5 to be heated, at this time, the extrusion round head rod 10 can move from the sliding inclined surface to the sliding vertical surface, so that the graphite sealing ring 12 on the outer connecting pipe 81 can be separated from the carrier cylinder 43, so that the carrier cylinder 43 can smoothly enter the heating cavity.

[0054] In this embodiment, two positions for annealing processing of silicon carbide wafer are arranged in the cooling cavity to alternately take and place the crucible 5 with silicon carbide wafer on the pair of loading cylinders 43, the pair of loading cylinders 43 is staggered to ascend and descend into the heating cavity, the sealing seat 42 is used to seal the connection between the cooling cavity and the heating cavity, the crucible 5 is taken and placed in the cooling cavity, the heat loss in the heating cavity is reduced, and the safety is higher; and the ascending and descending positions of the two crucibles 5 can be matched to realize the extension and retraction of the cooling flow member 8, the spiral cooling channel 431 arranged on the loading cylinder 43 is used to perform water cooling on the crucible 5 in time, the cooling time is shortened, the annealing efficiency is improved, further, when one crucible 5 is heated, the other crucible 5 can be cooled, the annealing time of the silicon carbide wafer in the equipment is maximally shortened, the processing amount is also improved, and the production efficiency and capacity of the silicon carbide wafer are improved.

[0055] Finally, the above only describes the preferred embodiments of the present application and is not used to limit the present application, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A heating apparatus for growing silicon carbide wafers, characterized by: Including annealing box (1), fixedly connected with heat insulation plate (2) in annealing box (1), the inner chamber of annealing box (1) is divided into cooling cavity and heating cavity by heat insulation plate (2) up and down; Wafer loading structure (4), the number of wafer loading structure (4) is a pair, the wafer loading structure (4) includes support (41), a pair of blocking seats (42) fixedly connected at both ends of the support (41) and mirror image setting and the cartridge (43) fixedly connected in the inner side of the support (41); The heat insulation plate (2) is provided with a material moving channel for blocking the seat (42), the cartridge (43) is provided with a cooling channel, and the two ends of the cooling channel extend to the outer surface of the cartridge (43), and the inner side of the cartridge (43) is movably provided with a crucible (5) for placing silicon carbide wafer; Chain lifting unit (6), the chain lifting unit (6) is arranged in the cooling cavity, a pair of lifting rods (7) are fixedly connected to the chain lifting unit (6), and the chain lifting unit (6) drives a pair of cartridges (43) to stagger lifting through corresponding lifting rods (7); Cooling flow element (8), the number of cooling flow element (8) is two pairs, and two pairs are vertically arranged as a group, the cooling flow element (8) includes an outer connecting pipe (81), a sealing ring (82) seamlessly connected to one end of the outer connecting pipe (81) and an inner connecting pipe (83) slidably connected in the outer connecting pipe (81), the inner connecting pipe (83) is slidably connected to the sealing ring (82), and the distance between the centers of the adjacent two outer connecting pipes (81) is the same as the distance between the two ends of the cooling channel (431); Linear extension structure (9), the number of linear extension structure (9) is a pair, two outer connecting pipes (81) are correspondingly arranged on one linear extension structure (9), the linear extension structure (9) is movably arranged on the heat insulation plate (2), and the chain lifting unit (6) is provided with an extrusion round head rod (10) for movably abutting against the linear extension structure (9); When the blocking seat (42) located at the bottom is arranged in the material moving channel on the heat insulation plate (2), the outer connecting pipe (81) is horizontally corresponding and close to the port position of the cooling channel (431), when the blocking seat (42) located at the top is arranged in the material moving channel on the heat insulation plate (2), the outer connecting pipe (81) is horizontally corresponding and away from the port position of the cooling channel (431); The linear extension structure (9) includes a fixed frame (91), a telescopic rod (92) fixedly connected to the fixed frame (91), a compression spring (93) sleeved on the telescopic rod (92) and an inclined seat (94) fixedly connected to the fixed frame (91), the fixed frame (91) is fixedly connected to a pair of outer connecting pipes (81), one end of the telescopic rod (92) away from the fixed frame (91) is fixedly connected to the inner wall of the annealing box (1), and the inclined seat (94) is slidably connected to the heat insulation plate (2); The bottom of the inclined seat (94) is fixedly connected with a sliding seat (14), the sliding seat (14) is slidingly connected on the heat insulation plate (2), the top of the inclined seat (94) is provided with a sliding inclined surface, the extrusion round head rod (10) is fixedly connected on the transmission chain (63) of the chain lifting unit (6), and the extrusion round head rod (10) is slidingly connected on the inclined seat (94).

2. The apparatus of claim 1, wherein: The annealing box (1) is provided with a sealing box door (3) which is rotatably connected through a hinge, and the sealing box door (3) is horizontally arranged on one side of the cooling cavity, and the heat insulation plate (2) is fixedly connected with a baffle (16).

3. The apparatus of claim 1, wherein: The chain lifting unit (6) comprises a pair of rotating seats (61) fixedly connected to the inner top and bottom of the cooling cavity, a flywheel (62) rotatably connected to each rotating seat (61), a transmission chain (63) drivingly connected to the pair of flywheels (62), and a motor (64) fixedly connected to one of the rotating seats (61) and used for driving the flywheel (62) to rotate, a pair of lifting rods (7) fixedly connected to the chain plates of the transmission chain (63), and the lifting rods (7) fixedly connected to the blocking seat (42) located at the top.

4. The apparatus of claim 1, wherein: The heat insulation plate (2) is fixedly connected with a polished rod I (13) for sliding of the lifting rod (7).

5. The apparatus of claim 1 wherein: the graphite susceptor is formed of a graphite material having a thermal conductivity of at least 80 W / m-K; and the graphite susceptor has a thickness of at least 2.5 cm. The outer connecting pipe (81) is fixedly connected with a graphite sealing ring (12) at one end away from the sealing ring (82), the inner connecting pipe (83) is fixedly penetrated through the annealing box (1) at one end away from the outer connecting pipe (81), the graphite sealing ring (12) is in the same straight line with the port of the cooling channel (431), and the cooling channel (431) is spirally arranged.

6. The apparatus of claim 1, wherein: The outer surface of the carrier cylinder (43) is provided with a butt joint plane (11), the port of the cooling channel (431) is arranged on the butt joint plane (11), and the graphite sealing ring (12) is in sliding contact with the butt joint plane (11).

7. The apparatus of claim 5, wherein: the graphite susceptor is formed of a graphite material having a thermal conductivity of at least 200 W / m-K; and the graphite susceptor has a thickness of at least 2.5 cm. The blocking seat (42) located at the top and the carrier cylinder (43) are fixedly connected with a guide plate (111), and the graphite sealing ring (12) is in sliding contact with the guide plate (111).

8. The heating device for silicon carbide wafer growth according to claim 1, characterized in that: The heat insulation plate (2) is fixedly connected with a polished rod II (15) for sliding of the extrusion round head rod (10).

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