Silicon epitaxial reactor apparatus and process for adjusting substrate surface thickness uniformity

Abstract

The application relates to the technical field of silicon processing equipment, and particularly discloses a silicon epitaxial reaction device capable of adjusting the uniformity of the thickness of a substrate surface and a process, which comprises an adjusting mechanism arranged in an epitaxial reaction body and used for adjusting the thickness of the substrate surface, the adjusting mechanism comprises an electric push rod, the electric push rod is fixedly arranged at the top of the epitaxial reaction device, the telescopic shaft of the electric push rod extends into the epitaxial reaction body, the telescopic shaft of the electric push rod is fixedly provided with a cross-shaped mounting plate, the driving assembly and the limiting assembly of the adjusting mechanism can conveniently drive a plurality of first polishing blocks and second polishing blocks to rotate, so that the thickness of a plurality of substrates can be conveniently adjusted, the adjustment efficiency is improved, the thickness of the substrates of different sizes can be conveniently adjusted, the applicability is improved, the height of the first polishing blocks and the second polishing blocks can be conveniently adjusted through cooperation of the auxiliary mechanism and the connecting assembly, and the device is suitable for substrates of different thicknesses.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of silicon processing equipment, in particular to a silicon epitaxial reaction device and process capable of adjusting the uniformity of substrate surface thickness. BACKGROUND

[0002] Epitaxy is a semiconductor process, the bottom layer of the silicon wafer is P-type substrate silicon (some add a buried layer), then a layer of single crystal silicon is grown on the substrate, this layer of single crystal silicon is called an epitaxial layer, the substrate is a wafer made of single-crystal semiconductor material, the substrate can directly enter the wafer manufacturing link to produce semiconductor devices or can be processed to produce epitaxial wafers, epitaxy refers to the process of growing a new single crystal on a single-crystal substrate, the new single crystal can be of the same material as the substrate or of a different material.

[0003] In order to achieve good heat dissipation, the silicon substrate needs to be thinned and polished, and then a series of complex semiconductor processes such as back metal plating are performed, wherein the thinning process determines whether the front process and the rear process can be smoothly connected, ensures that the circuit performance does not degrade, and plays a decisive role in connecting the front and the rear, the adjustment of the thickness of the silicon substrate surface is usually through chemical mechanical polishing, which is a process of alternating chemical corrosion and mechanical friction, and the silicon substrate material treated by chemical mechanical polishing can obtain a nanoscale surface topography, therefore, chemical mechanical polishing has become one of the key technologies in single crystal silicon substrate and integrated circuit manufacturing.

[0004] In summary, the existing silicon substrate surface thickness adjustment is usually through chemical mechanical polishing to grind the silicon substrate to a specified thickness, usually by mechanical arm or manpower to place the substrate material to be polished in the polishing groove, then polish by polishing block, and spray chemical liquid to the polishing place of the substrate material during polishing to improve the polishing effect, but in specific use, it has the following disadvantages:

[0005] It is inconvenient to polish multiple substrates or multiple substrates of different sizes at the same time, so that the surface thickness of multiple substrates or multiple substrates of different sizes cannot be adjusted at the same time, the adjustment efficiency is reduced, and the applicability is poor, since the thickness of substrates of different sizes is usually different, in order to ensure the surface thickness adjustment effect of substrates of different thicknesses, the polishing position needs to be adjusted, in order to solve the above problems, a silicon epitaxial reaction device and process capable of adjusting the uniformity of substrate surface thickness are provided. SUMMARY

[0006] In order to overcome the above-mentioned deficiencies of the prior art, the present application provides a silicon epitaxial reaction device and process capable of adjusting the uniformity of substrate surface thickness, which facilitates polishing multiple substrates or multiple substrates of different sizes at the same time, so that the surface thickness of multiple substrates or multiple substrates of different sizes can be adjusted at the same time, the adjustment efficiency is improved, and the applicability is better.

[0007] To achieve the above object, the present application is realized by the following technical solutions: adjustable substrate surface thickness uniformity silicon epitaxial reaction equipment, including epitaxial reaction machine body, also including adjusting mechanism for adjusting the thickness of the substrate surface arranged in the epitaxial reaction machine body, the adjusting mechanism comprises;

[0008] Electric push rod, fixedly arranged at the top of the epitaxial reaction equipment, and the telescopic shaft of the electric push rod extends into the epitaxial reaction machine body, the telescopic shaft of the electric push rod is fixedly provided with a cross mounting plate, the top of the cross mounting plate is provided with a ring array arranged connecting assembly, the bottom of the connecting assembly is provided with a first polishing block and a second polishing block, and the second polishing block is located on the inner side of the first polishing block, the sidewall of the first polishing block and the second polishing block is provided with an auxiliary mechanism for adjusting the height position of the first polishing block and the second polishing block, the top of the connecting assembly is provided with a driving assembly for driving the first polishing block and the second polishing block to rotate, the inner side of the driving assembly is provided with a limiting assembly for adjusting the rotation of the first polishing block and the second polishing block, the auxiliary mechanism comprises;

[0009] The second auxiliary assembly is arranged on the sidewall of the second polishing block for adjusting the height of the second polishing block.

[0010] The first auxiliary assembly is arranged on the sidewall of the first polishing block for adjusting the height of the first polishing block.

[0011] The connecting assembly comprises;

[0012] The first bearing seat is fixedly sleeved on the top of the cross mounting plate, the inner wall of the first bearing seat is provided with a first bearing, the outer wall of the outer ring of the first bearing is fixedly connected with the inner wall of the first bearing seat, the inner wall of the inner ring of the first bearing is fixedly provided with a connecting piece, the bottom of the connecting piece is fixedly provided with an insertion block extending to the bottom of the cross mounting plate, the top of the first polishing block and the second polishing block is provided with an insertion slot matched with the insertion block, and the cross section of the insertion block is designed as a regular hexagon.

[0013] The driving assembly comprises;

[0014] The servo motor is fixed on the side wall of the cross mounting plate, the output shaft of the servo motor is fixed with the first rotating shaft through the shaft coupling, the side wall of the first rotating shaft is provided with a transmission structure, the top of the cross mounting plate is fixed with a base, the top of the base is rotatably provided with a first gear ring, a second gear ring, a third gear ring and a fourth gear ring, the side of the first gear ring and the second gear ring close to each other is slidably connected, the side of the third gear ring and the fourth gear ring close to each other is slidably connected, the top of the base and located on the side of the second gear ring and the third gear ring close to each other is rotatably provided with a second rotating shaft, the side wall of the second rotating shaft is fixedly provided with a first gear engaged with the second gear ring and the third gear ring, the transmission structure is used for transmitting the first rotating shaft and the second rotating shaft, so that the output shaft of the servo motor drives the first gear to rotate, the outer wall of the servo motor is fixedly provided with a protective shell, the outer wall of the protective shell is fixedly connected with the side wall of the cross mounting plate, and the side wall of the first rotating shaft is rotatably connected with the inner wall of the protective shell.

[0015] The driving assembly further comprises;

[0016] The second gear is fixedly provided on the upper end of the side wall of the connecting piece in an annular array, is located on the outer side of the first gear ring, and is engaged with the first gear ring, and is used for driving the second polishing block to rotate;

[0017] The third gear is fixedly provided on the upper end of the side wall of the connecting piece in an annular array, is located on the inner side of the fourth gear ring, and is engaged with the fourth gear ring, and is used for driving the first polishing block to rotate.

[0018] The limiting assembly comprises;

[0019] The limiting half-groove is provided on the top of the first gear ring, the second gear ring, the third gear ring and the fourth gear ring, the limiting half-grooves on the top of the first gear ring and the second gear ring, the limiting half-grooves on the top of the third gear ring and the fourth gear ring are aligned to form a complete limiting groove;

[0020] The limiting block is provided in the limiting groove aligned by the limiting half-grooves, the cross section of the limiting block is designed in a rectangular shape, and is matched with the limiting groove;

[0021] The connecting plate is fixed on the top of the first gear ring, the second gear ring, the third gear ring and the fourth gear ring, and is located on the outer side of the limiting half-groove, the side wall of the connecting plate and the limiting block is provided with a matched screw hole;

[0022] The annular sliding block is fixed on the outer wall of the second gear ring and the fourth gear ring, the inner wall of the first gear ring and the third gear ring is provided with a matched annular sliding groove, and the annular sliding block is placed in the annular sliding groove.

[0023] The first auxiliary assembly comprises;

[0024] Second bearing seat, annular array is sleeved on the upper end of the side wall of the first polishing block, the inner wall of the second bearing seat is provided with the second bearing, the outer wall of the outer ring of the second bearing is fixedly connected with the inner wall of the second bearing seat, the inner wall of the inner ring of the second bearing is fixedly connected with the upper end of the side wall of the first polishing block, the outer wall of the second bearing seat is fixedly provided with the first fixed plate for connecting and fixing the second bearing seat, the outer wall of the second bearing seat is fixedly provided with the adjusting plate, the side wall of the adjusting plate is provided with the first through hole arranged vertically, and the outer side wall of the cross mounting plate is provided with the screw hole matched with the first through hole.

[0025] The second auxiliary assembly comprises;

[0026] Third bearing seat, annular array is sleeved on the upper end of the side wall of the second polishing block, the inner wall of the third bearing seat is provided with the third bearing, the outer wall of the outer ring of the third bearing is fixedly connected with the inner wall of the third bearing seat, the inner wall of the inner ring of the third bearing is fixedly connected with the upper end of the side wall of the second polishing block, the outer wall of the third bearing seat is fixedly provided with the second fixed plate, the side of the second fixed plate close to each other is fixedly provided with the fixed sleeve, and the outer wall of the fixed sleeve and between the second fixed plate is provided with the second through hole arranged in annular array;

[0027] Fixed column, fixedly provided in the bottom of the cross mounting plate, the side wall of the fixed column is sleeved in the inner wall of the fixed sleeve, the side wall of the fixed column is provided with the screw hole arranged in annular array and matched with the second through hole, and is vertically arranged.

[0028] The adjusting mechanism further comprises;

[0029] Workbench, fixedly provided on the inner wall bottom of the epitaxial reaction machine body, and located directly below the cross mounting plate, the top of the workbench is provided with the first polishing groove and the second polishing groove arranged in annular array and matched with the first polishing block and the second polishing block respectively, the second polishing groove is located on the inner side of the first polishing groove, the cross section of the first polishing block and the second polishing block is circularly designed, the inner wall diameter of the first polishing groove is greater than the inner wall diameter of the second polishing groove, and the top of the workbench and on the inner side of the second polishing groove is provided with the fixed groove matched with the side wall of the fixed column.

[0030] The inner wall bottom of the epitaxial reaction machine body and located on the front of the workbench is fixedly provided with a baffle, and the inner wall back of the epitaxial reaction machine body is fixedly provided with a water guide square tube extending to the outside of the epitaxial reaction machine body.

[0031] The process of the silicon epitaxial reaction equipment capable of adjusting the uniformity of the thickness of the substrate surface comprises the following steps:

[0032] S1: the substrate that needs to adjust the surface thickness is placed in the first polishing groove and the second polishing groove, then the cross mounting plate, the first polishing block and the second polishing block are driven to move downward by the telescopic shaft of the electric push rod and contact the top of the substrate;

[0033] S2: the first polishing block and the second polishing block are driven to rotate by the driving assembly and the connecting assembly of the adjusting mechanism, so that the substrate is polished, and the surface thickness of the substrate is adjusted, and the first polishing block and the second polishing block arranged in an annular array are driven to rotate synchronously, so that the surface thickness of multiple substrates of different sizes is adjusted at the same time;

[0034] S3: the rotation of the first polishing block and the second polishing block is adjusted by the limiting assembly of the adjusting mechanism, so that the surface thickness of a substrate of a certain size is adjusted.

[0035] The present application provides a silicon epitaxial reaction device and process capable of adjusting the uniformity of the surface thickness of the substrate.

[0036] 1、The driving assembly and the limiting assembly of the adjusting mechanism are used to drive multiple first polishing blocks and second polishing blocks to rotate synchronously, so that the surface thickness of multiple substrates is adjusted, the adjustment efficiency is improved, the surface thickness of substrates of different sizes is adjusted, the applicability is improved, the height of the first polishing block and the second polishing block is adjusted by the auxiliary mechanism and the connecting assembly, and the device is suitable for substrates of different thicknesses.

[0037] 2、The limiting assembly of the adjusting mechanism limits the first gear ring, the second gear ring, the third gear ring and the fourth gear ring, so that the first gear ring and the second gear ring are in an integrated state, or the third gear ring and the fourth gear ring are in an integrated state, or the first gear ring, the second gear ring, the third gear ring and the fourth gear ring are in an integrated state, so that the surface thickness of a substrate of a certain size is adjusted, or the surface thickness of multiple substrates of different sizes is adjusted, the flexibility of adjustment is improved, and the device is convenient for actual adjustment and use.

[0038] 3、The connecting assembly drives the first polishing block and the second polishing block to rotate without affecting the adjustment of the height of the first polishing block and the second polishing block by the auxiliary mechanism, so that the polishing stability is ensured, and the height of the first polishing block and the second polishing block is adjusted according to the thickness of the substrate.

[0039] 4、The first auxiliary assembly and the second auxiliary assembly of the auxiliary mechanism are used to adjust the height position of the first polishing block and the second polishing block, so that the device is suitable for substrates of different thicknesses, and the first fixed plate and other structures are used to synchronously adjust multiple first polishing blocks and second polishing blocks, so that the adjustment efficiency is improved. BRIEF DESCRIPTION OF DRAWINGS

[0040] Figure 1 This is a schematic diagram of the overall structure of the silicon epitaxial reaction apparatus of the present invention, which is applicable to adjusting the uniformity of substrate surface thickness.

[0041] Figure 2 This is a schematic diagram of the overall rear structure of the present invention;

[0042] Figure 3 This is a cross-sectional structural diagram of the epitaxial reaction apparatus of the present invention;

[0043] Figure 4 This is a schematic diagram of the limiting component, driving component, connecting component, cross mounting plate, and auxiliary mechanism of the present invention;

[0044] Figure 5 This is a schematic diagram of the structure of the first auxiliary component and the second auxiliary component of the present invention;

[0045] Figure 6 This is a cross-sectional view of the cross-shaped mounting bracket and an exploded view of the first and second grinding blocks of the present invention.

[0046] Figure 7 This is a schematic diagram of the connection component structure of the present invention;

[0047] Figure 8 This is a schematic diagram of the drive component structure of the present invention;

[0048] Figure 9 This is a schematic diagram of the servo motor, transmission structure, first gear, and base structure of the present invention.

[0049] Figure 10 This is an exploded structural diagram of the first gear ring, second gear ring, third gear ring, and fourth gear ring of the present invention;

[0050] Figure 11 For the present invention Figure 10 A magnified structural diagram of A in the middle;

[0051] Figure 12 For the present invention Figure 10 A magnified structural diagram of B in the diagram;

[0052] Figure 13 This is a schematic diagram of the bottom structure of the cross-shaped mounting plate of the present invention;

[0053] Figure 14 This is a schematic diagram of the structure of the second auxiliary component of the present invention;

[0054] Figure 15 This is a schematic diagram of the structure of the first auxiliary component of the present invention.

[0055] The reference signs involved in the above drawings: 1, epitaxial reaction machine body; 2, baffle; 3, auxiliary mechanism; 4, adjusting mechanism; 5, water guide square tube;

[0056] 31, second auxiliary assembly; 32, first auxiliary assembly;

[0057] 311, fixing column; 312, third bearing seat; 313, second fixing plate; 314, fixing sleeve;

[0058] 321, first fixing plate; 322, adjusting plate; 323, third bearing seat;

[0059] 41, electric push rod; 42, first polishing groove; 43, workbench; 44, fixing groove; 45, second polishing groove; 46, driving assembly; 47, limiting assembly; 48, connecting assembly; 49, cross mounting plate; 491, first polishing block; 492, second polishing block;

[0060] 461, second gear; 462, servo motor; 463, transmission structure; 464, first gear; 465, base; 466, third gear; 467, first gear ring; 468, third gear ring; 469, second gear ring; 4691, fourth gear ring;

[0061] 471, annular slider; 472, connecting plate; 473, limiting half slot; 474, limiting block;

[0062] 481, connecting piece; 482, first bearing seat; 483, plug block; 484, plug slot. DETAILED DESCRIPTION

[0063] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0064] Embodiment one; please refer to Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 and Figure 5 The adjustable substrate surface thickness uniformity silicon epitaxial reaction equipment includes an epitaxial reaction machine body 1, and further includes an adjusting mechanism 4 arranged in the epitaxial reaction machine body 1 for adjusting the thickness of the substrate surface, and the adjusting mechanism 4 includes;

[0065] An electric push rod 41 is fixedly mounted on the top of the epitaxial reaction equipment, and the telescopic shaft of the electric push rod 41 extends into the epitaxial reaction body 1. A cross mounting plate 49 is fixedly mounted on the telescopic shaft of the electric push rod 41. A connecting component 48 arranged in a ring array is provided on the top of the cross mounting plate 49. A first grinding block 491 and a second grinding block 492 are provided on the bottom of the connecting component 48, and the second grinding block 492 is located inside the first grinding block 491. An auxiliary mechanism 3 for adjusting the height position of the first grinding block 491 and the second grinding block 492 is provided on the sidewall of the first grinding block 491 and the second grinding block 492. A driving component 46 for driving the first grinding block 491 and the second grinding block 492 to rotate is provided on the top of the connecting component 48. A limiting component 47 for adjusting the rotation of the first grinding block 491 and the second grinding block 492 is provided inside the driving component 46.

[0066] The regulating mechanism 4 also includes;

[0067] The workbench 43 is fixedly installed on the bottom of the inner wall of the epitaxial reaction body 1 and is located directly below the cross mounting plate 49. The top of the workbench 43 has a first grinding groove 42 and a second grinding groove 45 arranged in a ring array and adapted to the first grinding block 491 and the second grinding block 492 respectively. The second grinding groove 45 is located inside the first grinding groove 42. The cross-section of the first grinding block 491 and the second grinding block 492 is circular. The inner diameter of the groove of the first grinding block 491 is larger than the inner diameter of the groove of the second grinding groove 45. The top of the workbench 43 and inside the second grinding groove 45 has a fixing groove 44 adapted to the side wall of the fixing column 311.

[0068] A baffle 2 is fixedly provided at the bottom of the inner wall of the epitaxial reactor body 1 and on the front of the workbench 43, and a water guide square pipe 5 extending to the outside of the epitaxial reactor body 1 is fixedly provided on the back of the inner wall of the epitaxial reactor body 1.

[0069] In practice, the cover on the front of the epitaxial reaction equipment is opened, and the operator places the substrate whose surface thickness needs to be adjusted into the first polishing groove 42 and the second polishing groove 45. Then, the telescopic shaft of the electric push rod 41 drives the cross mounting plate 49, the first polishing block 491 and the second polishing block 492 to move downwards and into the first polishing groove 42 and the second polishing groove 45 respectively, and they come into contact with the top of the substrate. Then, the cover is closed, and the first polishing block 491 and the second polishing block 492 are driven to rotate by the drive mechanism, thereby polishing the substrate to adjust the surface thickness of the substrate.

[0070] During the polishing process, existing epitaxial reactor 1 typically sprays chemical liquid onto the surface of the substrate to improve the uniformity of substrate surface thickness and other characteristics. This is existing technology and will not be elaborated here. The sprayed chemical liquid is blocked by baffle 2 inside the epitaxial reactor 1 and flows out of the epitaxial reactor 1 through water guide square pipe 5 for easy collection and subsequent processing.

[0071] Please see Figure 6 and Figure 7 The connecting component 48 includes;

[0072] The first bearing housing 482 is fixedly sleeved on the top of the cross mounting plate 49. The inner wall of the first bearing housing 482 is provided with a first bearing. The outer wall of the outer ring of the first bearing is fixedly connected to the inner wall of the first bearing housing 482. The inner wall of the inner ring of the first bearing is fixedly provided with a connector 481. The bottom of the connector 481 is fixedly provided with an insert 483 extending to the bottom of the cross mounting plate 49. The top of the first grinding block 491 and the second grinding block 492 are both provided with slots 484 that are adapted to the insert 483. The cross-section of the insert 483 is a regular hexagonal design.

[0073] In practical implementation, the first polishing block 491 and the second polishing block 492 are respectively fitted onto the side wall of the insert block 483 through the slot 484, so that the first polishing block 491 and the second polishing block 492 can move vertically on the side wall of the insert block 483. Furthermore, by designing the cross-section of the insert block 483 as a regular hexagon and adapting the insert block 483 to the slot 484, when the connector 481 drives the insert block 483 to rotate, it can drive the first polishing block 491 and the second polishing block 492 to rotate. This ensures the stability of subsequent polishing and facilitates the adjustment of the height position of the first polishing block 491 and the second polishing block 492 through the auxiliary mechanism 3. The connector 481 and the insert block 483 are rotatably mounted through the first bearing seat 482 and the first bearing to ensure the stability of their rotation.

[0074] Please see Figure 8 and Figure 9 The driving component 46 includes;

[0075] The servo motor 462 is fixed on the side wall of the cross mounting plate 49, the output shaft of the servo motor 462 is fixed with a first rotating shaft through a shaft coupling, the side wall of the first rotating shaft is provided with a transmission structure 463, the top of the cross mounting plate 49 is fixed with a base 465, the top of the base 465 is rotatably provided with a first gear ring 467, a second gear ring 469, a third gear ring 468 and a fourth gear ring 4691, the side close to each other of the first gear ring 467 and the second gear ring 469 is slidably connected, the side close to each other of the third gear ring 468 and the fourth gear ring 4691 is slidably connected, the top of the base 465 and located at the side close to each other of the second gear ring 469 and the third gear ring 468 is rotatably provided with a second rotating shaft, the side wall of the second rotating shaft is fixedly sleeved with a first gear 464 engaged with the second gear ring 469 and the third gear ring 468, the transmission structure 463 is used for transmission of the first rotating shaft and the second rotating shaft, so that the output shaft of the servo motor 462 drives the first gear 464 to rotate, the outer wall of the servo motor 462 is fixedly provided with a protective shell, the outer wall of the protective shell is fixedly connected with the side wall of the cross mounting plate 49, and the side wall of the first rotating shaft is rotatably connected with the inner wall of the protective shell.

[0076] The driving assembly 46 further comprises;

[0077] The second gear 461 is fixedly sleeved on the side wall of the connecting piece 481 and located outside the first gear ring 467 in an annular array, and is engaged with the first gear ring 467, and is used for transmission to drive the second polishing block 492 to rotate;

[0078] The third gear 466 is fixedly sleeved on the side wall of the connecting piece 481 and located inside the fourth gear ring 4691 in an annular array, and is engaged with the fourth gear ring 4691, and is used for transmission to drive the first polishing block 491 to rotate;

[0079] The first gear ring 467 and the third gear ring 468 are both outer tooth gear rings, the second gear ring 469 and the fourth gear ring 4691 are both inner tooth gear rings, the third gear ring 468 and the fourth gear ring 4691 are both located inside the second gear ring 469, and the side close to each other of the second gear ring 469 and the third gear ring 468 is left with a space for mounting the first gear 464.

[0080] Please refer to Figure 10 、 Figure 11 and Figure 12 , the limiting assembly 47 comprises;

[0081] The limiting half-groove 473 is formed in the top of the first gear ring 467, the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691, and the limiting half-grooves 473 in the top of the first gear ring 467 and the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691 are aligned to form a complete limiting groove;

[0082] The limiting block 474 is sleeved in the limiting groove formed by the alignment of the limiting half-grooves 473, and the cross section of the limiting block 474 is designed as a rectangle and is matched with the limiting groove;

[0083] The connecting plate 472 is fixedly arranged at the top of the first gear ring 467, the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691 and is located outside the limiting half-grooves 473, and the connecting plate 472 and the side wall of the limiting block 474 are both provided with matched screw holes;

[0084] The annular sliding block 471 is fixedly arranged on the outer wall of the second gear ring 469 and the fourth gear ring 4691, and the inner wall of the first gear ring 467 and the third gear ring 468 is provided with an annular sliding groove matched with the annular sliding block 471, and the annular sliding block 471 is arranged in the annular sliding groove.

[0085] In the specific implementation, the positions of the limiting half-grooves 473 at the top of the first gear ring 467, the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691 are adjusted, the limiting half-grooves 473 at the top of the first gear ring 467 and the second gear ring 469 and the third gear ring 468 and the fourth gear ring 4691 are aligned to form a complete limiting groove, then the limiting block 474 is inserted into the limiting groove, and the connecting plate 472 and the limiting block 474 are fixed by inserting the external bolts into the screw holes, so as to fix the first gear ring 467 and the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691;

[0086] When the first gear ring 467 and the second gear ring 469 are fixed by the limiting block 474 and the like, the first gear ring 467 and the second gear ring 469 are in an integrated state, at this time, the servo motor 462 is started, the output shaft of the servo motor 462 drives the first rotating shaft to rotate through the shaft coupling, the first rotating shaft drives the second rotating shaft and the first gear to rotate through the transmission structure 463, since the first gear 464 and the second gear ring 469 are engaged, at this time, the first gear ring 467 and the second gear ring 469 are in an integrated state, so as to drive the first gear ring 467 to rotate, the first gear ring 467 drives the second gears 461 arranged in an annular array to rotate synchronously, so as to drive the first polishing blocks 491 arranged in an annular array to rotate synchronously, thereby facilitating the surface thickness adjustment of multiple substrates of the same size at the same time;

[0087] When the third gear ring 468 and the fourth gear ring 4691 are fixed by the limiting block 474 and the like, the first gear ring 467 and the second gear ring 469 are in an integrated state, at this time, the output shaft of the servo motor 462 drives the third gear ring 468 to rotate through the first gear 464, so as to drive the fourth gear ring 4691 to rotate, so as to drive the third gears 466 and the second polishing blocks 492 arranged in an annular array to rotate, thereby facilitating the surface thickness adjustment of multiple substrates of another size;

[0088] When the first gear ring 467, the second gear ring 469, the third gear ring 468 and the fourth gear ring 4691 are all fixed by the limiting block 474 and the like, the first gear 464 is rotated, and at the same time, the first gear ring 467 and the fourth gear ring 4691 are driven to rotate synchronously, thereby driving the second gear 461, the third gear 466, the first polishing block 491 and the second polishing block 492 to rotate synchronously, so as to conveniently adjust the surface thickness of a plurality of substrates of different sizes synchronously.

[0089] When only one group of the first gear ring 467, the second gear ring 469 or the third gear ring 468 and the fourth gear ring 4691 is limited by the limiting block 474 and the like, since the two gear rings of the other group are connected in a sliding manner, the polishing block connected with the other group will not be driven to rotate, and only the load of the servo motor 462 is reduced, thereby facilitating actual use.

[0090] The transmission structure 463 includes a first transmission gear and a second transmission gear fixedly sleeved on the side wall upper end of the first rotating shaft and the second rotating shaft, and the first transmission gear and the second transmission gear are connected by a chain transmission, so that the first rotating shaft drives the second rotating shaft to rotate, and in turn drives the first gear 464 to rotate.

[0091] Embodiment two; please refer to Figure 5 、 Figure 6 and Figure 13 The difference between the technical solutions of the embodiment and embodiment one is that the auxiliary mechanism 3 comprises;

[0092] The second auxiliary assembly 31 is arranged on the side wall of the second polishing block 492, and is used for adjusting the height of the second polishing block 492;

[0093] The first auxiliary assembly 32 is arranged on the side wall of the first polishing block 491, and is used for adjusting the height of the first polishing block 491.

[0094] Please refer to Figure 15 The first auxiliary assembly 32 comprises;

[0095] The second bearing seat 323 is annularly arranged on the side wall upper end of the first polishing block 491, the inner wall of the second bearing seat 323 is provided with a second bearing, the outer ring outer wall of the second bearing is fixedly connected with the inner wall of the second bearing seat 323, the inner ring inner wall of the second bearing is fixedly connected with the side wall upper end of the first polishing block 491, the outer wall of the second bearing seat 323 is fixedly provided with a first fixed plate 321 used for connecting and fixing the second bearing seat 323, and the outer wall of the second bearing seat 323 is fixedly provided with an adjusting plate 322, the side wall of the adjusting plate 322 is provided with a first through hole arranged vertically, and the outer side wall of the cross-shaped mounting plate 49 is provided with a screw hole matched with the first through hole.

[0096] In specific implementation, the height of the second bearing seat 323 is adjusted by vertically arranging the first through holes, and aligning the first through holes at different height positions with the screw holes on the outer side wall of the cross mounting plate 49, and then the first through holes are inserted by external bolts and screwed into the screw holes on the outer side wall of the cross mounting plate 49 for fixation, so as to adjust the height of the first polishing block 491 on the side wall of the insertion slot 484, and then the height of the first polishing block 491 is adjusted to be suitable for substrates of different thicknesses, and the second bearing seats 323 arranged in a ring array are connected by the first fixed plate 321, so as to conveniently and synchronously adjust the height of the plurality of first polishing blocks 491 arranged in a ring array, and the actual adjustment and use are facilitated, and the first polishing block 491 is rotatably mounted by the second bearing, so as to ensure the normal rotation of the first polishing block 491, thereby avoiding affecting the polishing use, and the adjustment stability is ensured by the bolt fixation.

[0097] Please refer to Figure 14 , the second auxiliary assembly 31 comprises;

[0098] The third bearing seat 312 is arranged in a ring array on the upper end of the side wall of the second polishing block 492, the inner wall of the third bearing seat 312 is provided with a third bearing, the outer ring outer wall of the third bearing is fixedly connected with the inner wall of the third bearing seat 312, the inner ring inner wall of the third bearing is fixedly connected with the upper end of the side wall of the second polishing block 492, the outer wall of the third bearing seat 312 is fixedly provided with a second fixed plate 313, the side of the second fixed plate 313 close to each other is fixedly provided with a fixed sleeve 314, and the outer wall of the fixed sleeve 314 and between the second fixed plate 313 are provided with a second through hole arranged in a ring array;

[0099] The fixed column 311 is fixedly arranged at the bottom of the cross mounting plate 49, the side wall of the fixed column 311 is arranged in the inner wall of the fixed sleeve 314, the side wall of the fixed column 311 is provided with a screw hole arranged in a ring array and matched with the second through hole, and the screw hole is arranged in a vertical arrangement.

[0100] In specific implementation, the screw hole arranged in a vertical arrangement is provided, the screw holes at different heights are aligned with the second through hole, the external bolt is inserted into the second through hole and screwed into the screw hole arranged on the side wall of the fixed column 311, so as to adjust the height of the second polishing block 492, the plurality of third bearing seats 312 are connected by the second fixed plate 313 and the fixed sleeve 314, so as to conveniently and synchronously adjust the height of the plurality of second polishing blocks 492, and the second polishing block 492 is rotatably mounted by the third bearing, so as to avoid affecting the normal polishing use, when the first polishing block 491 and the second polishing block 492 are driven by the electric push rod 41 to move downward, the fixed column 311 is inserted into the fixed groove 44, so as to avoid affecting the adjustment use.

[0101] The embodiment of the present application also provides a process of the silicon epitaxial reaction equipment capable of adjusting the thickness uniformity of a substrate surface, and the process comprises the following steps:

[0102] S1: open the machine cover at the front of the epitaxial reaction equipment, and a worker places a substrate whose surface thickness needs to be adjusted in the first polishing groove 42 and the second polishing groove 45, then the cross mounting plate 49, the first polishing block 491 and the second polishing block 492 are driven to move downwards by the extension shaft of the electric push rod 41, and are moved into the first polishing groove 42 and the second polishing groove 45 respectively and contact the top of the substrate, the substrate is positioned by the first polishing block 491, the second polishing block 492, the first polishing groove 42 and the second polishing groove 45, so as to avoid deviation and other conditions of the substrate during polishing, and the substrate is polished by the first polishing block 491 and the second polishing block 492;

[0103] S2: the first polishing block 491 and the second polishing block 492 are driven to rotate by the driving assembly 46 and the connecting assembly 48 of the adjusting mechanism 4, so as to polish the substrate and adjust the surface thickness of the substrate, and the first polishing block 491 and the second polishing block 492 are driven to rotate synchronously, and polishing blocks and polishing grooves of different sizes are arranged, so as to simultaneously adjust the surface thickness of multiple substrates of different sizes and improve work efficiency;

[0104] S3: the rotation of the first polishing block 491 and the second polishing block 492 is adjusted by the limiting assembly 47 of the adjusting mechanism 4, so that the first polishing block 491 or the second polishing block 492 rotates alone, thereby facilitating the adjustment of the surface thickness of a substrate of one size, and the first polishing block 491 or the second polishing block 492 can be driven to rotate in linkage, so as to facilitate the adjustment of the surface thickness of multiple substrates of different sizes, and according to the different thicknesses of the substrates, the height positions of the first polishing block 491 and the second polishing block 492 are adjusted by the first auxiliary assembly 32 and the second auxiliary assembly 31 of the auxiliary mechanism 3, so as to facilitate the adjustment of the polishing degree according to the thicknesses of substrates of different sizes, thereby facilitating the actual adjustment of the surface thickness of the substrate and improving applicability.

[0105] The servo motor 462 and the electric push rod 41 of the present application are connected with an external controller and a power supply through wires, so as to facilitate actual control and use, which is prior art and will not be described here.

[0106] Meanwhile, the contents not described in detail in the present specification all belong to prior art known by those skilled in the art.

[0107] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting; it is not intended to exclude myriad other embodiments of the present application that other inventors can develop based on the same general inventive concepts embodied by the described embodiments. That is, although the present application is described in terms of particular embodiments and illustrative figures, it should be apparent that the scope of the present application is not limited to these specific embodiments.

[0108] While the embodiments of the application have been shown and described herein, it is to be understood that the scope of the application, jointly pointed out in the appended claims, is not to be limited to the above-described embodiments but can be otherwise variously changed, modified, replaced, and altered within the principles and spirit of the present application.

Claims

1. A silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity, comprising an epitaxial reaction body, characterized in that, It also includes an adjustment mechanism disposed within the epitaxial reaction apparatus for adjusting the thickness of the substrate surface, the adjustment mechanism comprising; An electric push rod is fixedly mounted on the top of the epitaxial reaction equipment, and the telescopic shaft of the electric push rod extends into the epitaxial reaction body. A cross-shaped mounting plate is fixedly mounted on the telescopic shaft of the electric push rod. A connecting component arranged in a ring array is provided on the top of the cross-shaped mounting plate. A first grinding block and a second grinding block are provided at the bottom of the connecting component, and the second grinding block is located inside the first grinding block. An auxiliary mechanism for adjusting the height of the first grinding block and the second grinding block is provided on the sidewalls of the first grinding block and the second grinding block. A driving component for driving the first grinding block and the second grinding block to rotate is provided on the top of the connecting component. A limiting component for adjusting the rotation of the first grinding block and the second grinding block is provided inside the driving component. The auxiliary mechanism includes: The second auxiliary component is disposed on the side wall of the second grinding block and is used to adjust the height of the second grinding block; A first auxiliary component is disposed on the side wall of the first grinding block for adjusting the height of the first grinding block; the connecting component includes: A first bearing housing is fixedly sleeved on the top of the cross mounting plate. A first bearing is provided on the inner wall of the first bearing housing. The outer wall of the outer ring of the first bearing is fixedly connected to the inner wall of the first bearing housing. A connector is fixedly provided on the inner wall of the inner ring of the first bearing. An insert extending to the bottom of the connector is fixedly provided at the bottom. The top of the first grinding block and the second grinding block are both provided with slots that are adapted to the insert. The cross-section of the insert is a regular hexagonal design. The drive assembly includes: A servo motor is fixedly mounted on the side wall of a cross-shaped mounting plate. The output shaft of the servo motor is fixedly mounted on a first rotating shaft via a coupling. A transmission structure is provided on the side wall of the first rotating shaft. A base is fixedly mounted on the top of the cross-shaped mounting plate. A first gear ring, a second gear ring, a third gear ring, and a fourth gear ring are rotatably mounted on the top of the base. The first and second gear rings are slidably connected on their adjacent sides, and the third and fourth gear rings are slidably connected on their adjacent sides. A second rotating shaft is rotatably mounted on the top of the base, located on the adjacent side of the second and third gear rings. A first gear that meshes with the second and third gear rings is fixedly sleeved on the side wall of the second rotating shaft. The transmission structure is used to drive the first rotating shaft and the second rotating shaft so that the output shaft of the servo motor drives the first gear to rotate. A protective shell is fixedly mounted on the outer wall of the servo motor. The outer wall of the protective shell is fixedly connected to the side wall of the cross-shaped mounting plate, and the side wall of the first rotating shaft is rotatably connected to the inner wall of the protective shell. The drive assembly also includes... The second gear is fixedly sleeved on the upper side wall of the connector in a ring array and is located outside the first gear ring. It meshes with the first gear ring and is used to drive the second grinding block to rotate. The third gear, arranged in a ring array, is fixedly sleeved on the upper end of the side wall of the connector and located inside the fourth gear ring, meshing with the fourth gear ring, and is used to drive the first grinding block to rotate. The limiting component includes: The limiting half-groove is formed on the top of the first gear ring, the second gear ring, the third gear ring and the fourth gear ring. The limiting half-groove on the top of the first gear ring and the second gear ring, and the limiting half-groove on the top of the third gear ring and the fourth gear ring are aligned to form a complete limiting groove. The limiting block is fitted into the limiting groove formed by aligning the limiting half groove, and the cross-section of the limiting block is rectangular and fits the limiting groove. The connecting plate is fixedly installed on the top of the first gear ring, the second gear ring, the third gear ring and the fourth gear ring, and is located outside the limiting half groove. The side walls of the connecting plate and the limiting block are provided with matching screw holes. An annular slider is fixedly mounted on the outer wall of the second and fourth gear rings. The inner walls of the first and third gear rings are each provided with an annular groove that matches the annular slider, and the annular slider is placed in the annular groove.

2. The silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity according to claim 1, characterized in that, The first auxiliary component includes; The second bearing housing is arranged in a ring array and sleeved on the upper end of the side wall of the first grinding block. The inner wall of the second bearing housing is provided with a second bearing. The outer wall of the outer ring of the second bearing is fixedly connected to the inner wall of the second bearing housing. The inner wall of the inner ring of the second bearing is fixedly connected to the upper end of the side wall of the first grinding block. The outer wall of the second bearing housing is fixedly provided with a first fixing plate for connecting and fixing the second bearing housing. The outer wall of the second bearing housing is fixedly provided with an adjusting plate. The side wall of the adjusting plate is provided with a vertically arranged first through hole. The outer wall of the cross mounting plate is provided with a screw hole that matches the first through hole.

3. The silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity according to claim 1, characterized in that, The second auxiliary component includes; The third bearing housing is arranged in a ring array on the upper end of the side wall of the second grinding block. The inner wall of the third bearing housing is provided with the third bearing. The outer wall of the outer ring of the third bearing is fixedly connected to the inner wall of the third bearing housing. The inner wall of the inner ring of the third bearing is fixedly connected to the upper end of the side wall of the second grinding block. The outer wall of the third bearing housing is fixedly provided with the second fixing plate. The side of the second fixing plate that is close to each other is fixedly provided with the fixing sleeve. The outer wall of the fixing sleeve and the second fixing plate are provided with the second through holes arranged in a ring array. The fixing post is fixedly installed at the bottom of the cross mounting plate. The side wall of the fixing post is fitted into the inner wall of the fixing sleeve. The side wall of the fixing post has screw holes arranged in a ring array that are compatible with the second through hole and are arranged vertically.

4. The silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity according to claim 1, characterized in that, The adjustment mechanism also includes; The workbench is fixedly installed on the bottom of the inner wall of the epitaxial reaction body and is located directly below the cross mounting plate. The top of the workbench has a first grinding groove and a second grinding groove arranged in a ring array and adapted to the first grinding block and the second grinding block respectively. The second grinding groove is located inside the first grinding groove. The cross-section of the first grinding block and the second grinding block are both circular. The inner diameter of the first grinding block groove is larger than the inner diameter of the second grinding groove. The top of the workbench and the inner side of the second grinding groove have a fixing groove adapted to the side wall of the fixing column.

5. The silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity according to claim 1, characterized in that, A baffle is fixedly provided at the bottom of the inner wall of the epitaxial reaction body and on the front of the workbench, and a water guide square pipe extending out of the body is fixedly provided on the back of the inner wall of the epitaxial reaction body.

6. A process for a silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity, characterized in that, The silicon epitaxial reaction apparatus with adjustable substrate surface thickness uniformity as described in any one of claims 1-5 includes the following steps; S1: Place the substrate whose surface thickness needs to be adjusted into the first polishing groove and the second polishing groove. Then, the cross mounting plate, the first polishing block and the second polishing block are moved downward by the telescopic shaft of the electric push rod and come into contact with the top of the substrate. S2: By cooperating with the drive component and the connecting component of the adjustment mechanism, the first polishing block and the second polishing block are rotated to polish the substrate and adjust the surface thickness of the substrate. Furthermore, by synchronously driving the first polishing block and the second polishing block arranged in a ring array to rotate, the surface thickness of multiple substrates of different sizes can be adjusted simultaneously. S3: Adjust the rotation of the first polishing block and the second polishing block by adjusting the limiting component of the adjustment mechanism to adjust the surface thickness of a substrate of one size individually.

Images