Photoresist stripping solution and preparation method thereof

Abstract

The present invention relates to a photoresist stripping solution and a preparation method thereof. The stripping solution comprises, by weight, 32-58 parts of an organic amine, 0.5-2.5 parts of a chelating agent, 0.2-2 parts of a surfactant, and 50-80 parts of an organic solvent; wherein the organic amine is a reaction product of 2-hydroxypyridine-N-oxide and monoethanolamine after an esterification reaction. The stripping solution prepared by the present invention has a strong degumming capability. After stripping the photoresist, the substrate can be substantially free of residue. While removing the residue, the substrate below is not damaged. The stripping solution is less corrosive to the substrate and can well meet the requirements of processes with high precision and quality.

Description

Technical Field

[0001] The invention relates to the field of stripping liquid, in particular to a stripping liquid for photoresist and a preparation method thereof. Background Art

[0002] Stripping is the process of removing photoresist by chemical reaction or physical dissolution. Stripping technology is divided into wet stripping and dry stripping. Wet stripping uses chemical reagents to physically dissolve or chemically react with the photoresist to achieve the purpose of stripping. Stripping liquid is a colorless and transparent liquid. In the prior art, the removal of photoresist used as a substrate in industries such as thin film field effect transistor liquid crystal display (TFT-LCD), light emitting diode (LED), and organic light emitting diode (OLED) mainly uses stripping liquids made from dangerous chemical reagents such as fluoride and hydrogen peroxide. However, the above-mentioned stripping liquids have the following disadvantages: the stripping rate is difficult to control, the stripping effect of different metal layers varies, and there is residue on the substrate after the stripping liquid is treated, which affects the product yield; the stripping effect of the stripping liquid on the photoresist in the deep holes of the pattern is not ideal; chemical reagents such as fluoride and hydrogen peroxide that affect the product pose a certain threat to the safe operation of the workers.

[0003] In the existing manufacturing process for liquid crystal substrates and touch screens, multiple layers of precise microcircuits are formed on silicon wafers or glass substrates through multiple processes, including pattern mask exposure and etching. After the microcircuits are formed, a photoresist stripping solution is used to remove the photoresist that acts as a mask over the microcircuit protection areas. Poor stripping performance can directly impact the quality of the circuit board manufacturing process, affecting the accuracy and quality of high-density, fine-wire images. To meet the increasing demands for image accuracy and quality, those skilled in the art need to further improve existing stripping solution technologies. Summary of the Invention

[0004] In view of the problems existing in the prior art, the purpose of the present invention is to provide a photoresist stripping solution and a preparation method thereof.

[0005] The purpose of the present invention is achieved by adopting the following technical solutions:

[0006] In a first aspect, the present invention provides a photoresist stripping solution, which comprises, calculated in parts by weight:

[0007] 32-58 parts of organic amine, 0.5-2.5 parts of chelating agent, 0.2-2 parts of surfactant and 50-80 parts of organic solvent.

[0008] Preferably, the organic amine is a reaction product of 2-hydroxypyridine-N-oxide (HOPO) and monoethanolamine (MEA) after esterification reaction.

[0009] Preferably, the chelating agent is one or more combinations of ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA), and triethylenetetraaminehexaacetic acid (TTHA).

[0010] Preferably, the surfactant is an anionic surfactant, including one or more combinations of sodium dodecylbenzenesulfonate, sodium hexadecylbenzenesulfonate, sodium octadecylbenzenesulfonate, sodium lauryl alcohol polyoxyethylene ether sulfate, ammonium lauryl sulfate, and sodium lauryl alcohol polyoxyethylene ether sulfate.

[0011] Preferably, the organic solvent is one or more combinations of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, diethylene glycol butyl ether, diethylene glycol methyl ether, triethylene glycol butyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, dipropylene glycol methyl ether, diethylene glycol ethyl ether, ethylene glycol monoethyl ether, tetrahydrofurfuryl alcohol, butanol, benzyl alcohol, ethylene glycol, propylene glycol, and glycerol.

[0012] Preferably, the preparation method of the organic amine comprises:

[0013] S1. Adding protective groups:

[0014] Weigh monoethanolamine and dissolve it in ethanol solvent. Adjust the pH of the reaction solution to 8.0-8.5. Then gradually add benzyl chloroformate over 1 hour. After all the benzyl chloroformate is added, stir and react at room temperature for 10-15 hours. After the reaction is completed, reduce the pressure until the solvent is completely evaporated. After extraction and drying, obtain benzyloxycarbonyl-protected monoethanolamine;

[0015] S2, react with 2-hydroxypyridine-N-oxide:

[0016] Under nitrogen, weigh benzyloxycarbonyl-protected monoethanolamine and N,N-dimethylacetamide, mix thoroughly, then add 1,3-dicyclohexylcarbodiimide and 4-dimethylaminopyridine in sequence. Stir at room temperature for half an hour, then gradually add 2-hydroxypyridine-N-oxide. After the addition is complete, stir at room temperature for 10-20 hours, dry under reduced pressure, and separate by column chromatography to obtain a benzyloxycarbonyl-protected organic amine.

[0017] S3, removal of protecting groups:

[0018] The benzyloxycarbonyl-protected organic amine and ethanol are mixed in a reaction kettle, a palladium carbon catalyst is added, and hydrogen is introduced. After stirring at room temperature for 4-6 hours, the solid is filtered out and dried under reduced pressure to obtain the final product, the organic amine.

[0019] Preferably, in S1, the mass ratio of monoethanolamine, benzyl chloroformate and ethanol is 0.6-1.2:1.8-3.6:10-20.

[0020] Preferably, in S1, adjusting the pH to 8.0-8.5 is performed by adding sodium hydroxide.

[0021] Preferably, in S1, the extraction is performed by mixing the decompressed product with an equal amount of deionized water as an ethanol solvent, shaking thoroughly, then adding an equal amount of dichloromethane as an ethanol solvent, shaking well, standing to separate the layers, and extracting and collecting the organic phase.

[0022] Preferably, in S2, the mass ratio of benzyloxycarbonyl-protected monoethanolamine, 2-hydroxypyridine-N-oxide and N,N-dimethylacetamide is 0.8-1.6:1.2-2.4:10-20.

[0023] Preferably, in S2, the mass ratio of 1,3-dicyclohexylcarbodiimide, 4-dimethylaminopyridine and benzyloxycarbonyl-protected monoethanolamine is 2.1-4.2:1.2-2.4:1.

[0024] Preferably, in said S2, during the column chromatography separation, the eluent is dichloromethane and ethanol in a volume ratio of 50:1.

[0025] Preferably, in said S3, the palladium content of the catalyst palladium carbon is 5%, and the amount of the catalyst added is 12%-18% of the mass of the benzyloxycarbonyl-protected organic amine.

[0026] Preferably, in S3, the mass ratio of the benzyloxycarbonyl-protected organic amine to ethanol is 1:6-12.

[0027] Preferably, in S3, the hydrogen introduction pressure is 2.1-2.5 bar.

[0028] In a second aspect, the present invention provides a method for preparing a photoresist stripping solution, comprising: first mixing an organic amine and an organic solvent, stirring evenly at room temperature, then sequentially adding a chelating agent and a surfactant, stirring thoroughly, and filtering using a 0.1±0.05 μm filter membrane to obtain a photoresist stripping solution.

[0029] The beneficial effects of the present invention are:

[0030] 1. The present invention prepares a photoresist stripping solution. Unlike conventional stripping solutions, the present invention utilizes an organic amine, which is the reaction product of 2-hydroxypyridine-N-oxide (HOPO) and monoethanolamine (MEA) through an esterification reaction. Furthermore, the present invention incorporates a chelating agent and a surfactant as auxiliary agents, which together constitute the main components of the stripping solution. The stripping solution prepared by the present invention possesses a strong degumming capability. After stripping the photoresist, the substrate is essentially left with no residue. While removing the residue, the stripping solution does not damage the underlying substrate. It is less corrosive to the substrate and can effectively meet the requirements of processes with high precision and quality requirements.

[0031] 2. In the present invention, the raw materials for the prepared organic amine are 2-hydroxypyridine-N-oxide and monoethanolamine. Monoethanolamine is a traditional general-purpose organic amine, but its stripping effect can no longer meet the requirements, and it has certain corrosive properties to the substrate and metal wiring. In order to improve this effect, the present invention uses a chelating agent containing hydroxypyridine, 2-hydroxypyridine-N-oxide, combined with monoethanolamine to synthesize a new type of organic amine compound. After testing, it was found that the organic amine obtained by the synthesis not only greatly weakens the corrosiveness to the substrate, but also greatly enhances the stripping effect.

[0032] 3. The process for synthesizing an organic amine according to the present invention is to first protect the amino group of monoethanolamine using a benzyloxycarbonyl protecting group (-Cbz), then react the monoethanolamine with 2-hydroxypyridine-N-oxide to undergo an esterification reaction under the action of DCC / DMAP, and then remove the benzyloxycarbonyl protecting group (-Cbz) by palladium-carbon (Pt / C) catalytic hydrogenation to obtain an organic compound containing an amino group, i.e., the final product, an organic amine. DETAILED DESCRIPTION

[0033] The technical solution of the present invention is described below through specific examples. It should be understood that the one or more method steps mentioned in the present invention do not exclude the presence of other method steps before and after the combination step or the insertion of other method steps between these explicitly mentioned steps; it should also be understood that these embodiments are only used to illustrate the present invention and are not used to limit the scope of the present invention. Moreover, unless otherwise specified, the numbering of each method step is only a convenient tool for identifying each method step, and is not intended to limit the order of arrangement of each method step or to define the scope of the present invention. Changes or adjustments in their relative relationships, without substantially changing the technical content, should also be regarded as the scope of the present invention.

[0034] In order to better understand the above technical solutions, exemplary embodiments of the present invention are described in more detail below. Although exemplary embodiments of the present invention are shown, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0035] The present invention will be further described below with reference to the following examples.

[0036] Example 1

[0037] A photoresist stripping solution, calculated in parts by weight, comprising:

[0038] 45 parts of organic amine (OA), 1.5 parts of ethylenediaminetetraacetic acid (EDTA), 1.4 parts of sodium lauryl alcohol polyoxyethylene ether sulfate and 65 parts of N,N-dimethylformamide.

[0039] Wherein, the preparation method of organic amine (OA) comprises:

[0040] S1. Adding protective groups:

[0041] Weigh monoethanolamine (MEA) and dissolve it in ethanol solvent, then add sodium hydroxide and stir thoroughly until the pH of the reaction solution is 8.0-8.5, then gradually add benzyl chloroformate (Cbz-Cl) within 1 hour, the mass ratio of monoethanolamine, benzyl chloroformate and ethanol is 0.9:2.7:15, after all are added, stir and react at room temperature for 12 hours, after the reaction is completed, reduce pressure until the solvent is completely evaporated, add deionized water with an equal amount of ethanol solvent, shake thoroughly, then add dichloromethane with an equal amount of ethanol solvent, shake again and let stand for stratification, repeat extraction multiple times, collect and combine the organic phases, and dry the organic phases to obtain benzyloxycarbonyl-protected monoethanolamine (Cbz-MEA);

[0042] S2, react with 2-hydroxypyridine-N-oxide:

[0043] Under the protection of nitrogen, benzyloxycarbonyl protected monoethanolamine (Cbz-MEA) and N,N-dimethylacetamide (DMF) were weighed and mixed. After thorough mixing, 1,3-dicyclohexylcarbodiimide (DCC) and 4-dimethylaminopyridine (DMAP) were added in sequence. The mass ratio of 1,3-dicyclohexylcarbodiimide, 4-dimethylaminopyridine and benzyloxycarbonyl protected monoethanolamine was 3.1:1.8:1. Stir at room temperature for half an hour and gradually add 2-Hydroxypyridine-N-oxide (HPNO, C5H5NO2), benzyloxycarbonyl-protected monoethanolamine, 2-hydroxypyridine-N-oxide, and N,N-dimethylacetamide were added in a mass ratio of 1.2:1.8:15. After the addition was complete, the mixture was stirred at room temperature for 15 hours, dried under reduced pressure, and passed through a silica gel column using a gradient elution with dichloromethane and ethanol in a volume ratio of 50:1 as the eluent to obtain the benzyloxycarbonyl-protected organic amine (Cbz-OA);

[0044] S3, removal of protecting groups:

[0045] A benzyloxycarbonyl-protected organic amine (Cbz-OA) and ethanol were mixed in a mass ratio of 1:10, and hydrogen was introduced at a pressure of 2.3 bar. Palladium on carbon (Pt / C) with a palladium content of 5% was then added in an amount of 15% of the mass of the benzyloxycarbonyl-protected organic amine. The reaction was stirred at room temperature for 5 hours, and the solid was removed by filtration. The mixture was dried under reduced pressure to obtain the final product, the organic amine (OA).

[0046] The preparation process of the stripping solution includes: first mixing the organic amine and the organic solvent, stirring evenly at room temperature, then adding the chelating agent and the surfactant in sequence, stirring thoroughly, and filtering through a 0.1±0.05μm filter membrane to obtain the photoresist stripping solution.

[0047] Example 2

[0048] A photoresist stripping solution, calculated in parts by weight, comprising:

[0049] 32 parts of organic amine (OA), 0.5 parts of diethylenetriaminepentaacetic acid (DTPA), 0.2 parts of sodium hexadecylbenzenesulfonate and 50-80 parts of N,N-dimethylacetamide.

[0050] The preparation method of the organic amine comprises:

[0051] S1. Adding protective groups:

[0052] Weigh monoethanolamine (MEA) and dissolve it in ethanol solvent, then add sodium hydroxide and stir thoroughly until the pH of the reaction solution is 8.0-8.5, then gradually add benzyl chloroformate (Cbz-Cl) within 1 hour, the mass ratio of monoethanolamine, benzyl chloroformate and ethanol is 0.6:1.8:10, after all are added, stir and react at room temperature for 10 hours, after the reaction is completed, reduce the pressure until the solvent is completely evaporated, add deionized water equal to the solvent, shake thoroughly, add dichloromethane equal to the solvent, shake again and let stand to separate, extract and collect the organic phase, and dry the organic phase to obtain benzyloxycarbonyl protected monoethanolamine (Cbz-MEA);

[0053] S2, react with 2-hydroxypyridine-N-oxide:

[0054] Under nitrogen, benzyloxycarbonyl-protected monoethanolamine (Cbz-MEA) and N,N-dimethylacetamide (DMF) were weighed and mixed. After thorough mixing, 1,3-dicyclohexylcarbodiimide (DCC) and 4-dimethylaminopyridine (DMAP) were added in sequence. The mass ratio of 1,3-dicyclohexylcarbodiimide, 4-dimethylaminopyridine and benzyloxycarbonyl-protected monoethanolamine was 2.1:1.2:1. After stirring at room temperature for half an hour, 2-hydroxypyridine-N-oxide was gradually added. The mass ratio of benzyloxycarbonyl-protected monoethanolamine, 2-hydroxypyridine-N-oxide and N,N-dimethylacetamide was 0.8:1.2:10. After the addition was complete, the mixture was stirred at room temperature for 10 hours, dried under reduced pressure, and passed through a silica gel column using a gradient elution of dichloromethane and ethanol in a volume ratio of 50:1 as the eluent to obtain a benzyloxycarbonyl-protected organic amine (Cbz-OA).

[0055] S3, removal of protecting groups:

[0056] A benzyloxycarbonyl-protected organic amine (Cbz-OA) and ethanol are mixed in a mass ratio of 1:6. Hydrogen is introduced at a pressure of 2.1 bar. Palladium on carbon (Pt / C) with a palladium content of 5% is added in an amount equivalent to 12% of the mass of the benzyloxycarbonyl-protected organic amine. The reaction is stirred at room temperature for 4-6 hours, and the solid is removed by filtration. The mixture is dried under reduced pressure to obtain the final product, the organic amine (OA).

[0057] The preparation process of the stripping solution includes: first mixing the organic amine and the organic solvent, stirring evenly at room temperature, then adding the chelating agent and the surfactant in sequence, stirring thoroughly, and filtering through a 0.1±0.05μm filter membrane to obtain the photoresist stripping solution.

[0058] Example 3

[0059] A photoresist stripping solution, calculated in parts by weight, comprising:

[0060] 58 parts of organic amine, 2.5 parts of triethylenetetraaminehexaacetic acid (TTHA), 2 parts of sodium dodecylbenzenesulfonate and 80 parts of N-methylpyrrolidone.

[0061] The preparation method of the organic amine comprises:

[0062] S1. Adding protective groups:

[0063] Weigh monoethanolamine (MEA) and dissolve it in ethanol solvent, then add sodium hydroxide and stir thoroughly until the pH of the reaction solution is 8.0-8.5, then gradually add benzyl chloroformate (Cbz-Cl) within 1 hour, the mass ratio of monoethanolamine, benzyl chloroformate and ethanol is 1.2:3.6:20, after all are added, stir and react at room temperature for 15 hours, after the reaction is completed, reduce pressure until the solvent is completely evaporated, add deionized water equal to the solvent, shake thoroughly, add dichloromethane equal to the solvent, shake again and let stand to separate, extract and collect the organic phase, and dry the organic phase to obtain benzyloxycarbonyl protected monoethanolamine (Cbz-MEA);

[0064] S2, react with 2-hydroxypyridine-N-oxide:

[0065] Under nitrogen, benzyloxycarbonyl-protected monoethanolamine (Cbz-MEA) and N,N-dimethylacetamide (DMF) were weighed and mixed. After thorough mixing, 1,3-dicyclohexylcarbodiimide (DCC) and 4-dimethylaminopyridine (DMAP) were added in sequence. The mass ratio of 1,3-dicyclohexylcarbodiimide, 4-dimethylaminopyridine and benzyloxycarbonyl-protected monoethanolamine was 4.2:2.4:1. After stirring at room temperature for half an hour, 2-hydroxypyridine-N-oxide was gradually added. The mass ratio of benzyloxycarbonyl-protected monoethanolamine, 2-hydroxypyridine-N-oxide and N,N-dimethylacetamide was 1.6:2.4:20. After the addition was complete, the mixture was stirred at room temperature for 20 hours, dried under reduced pressure, and passed through a silica gel column using a gradient elution of dichloromethane and ethanol in a volume ratio of 50:1 as the eluent to obtain a benzyloxycarbonyl-protected organic amine (Cbz-OA).

[0066] S3, removal of protecting groups:

[0067] A benzyloxycarbonyl-protected organic amine (Cbz-OA) and ethanol were mixed in a mass ratio of 1:12, and hydrogen was introduced at a pressure of 2.5 bar. Palladium on carbon (Pt / C) with a palladium content of 5% was then added in an amount of 18% of the mass of the benzyloxycarbonyl-protected organic amine. The reaction was stirred at room temperature for 6 hours, and the solid was removed by filtration. The mixture was dried under reduced pressure to obtain the final product, the organic amine (OA).

[0068] The preparation process of the stripping solution includes: first mixing the organic amine and the organic solvent, stirring evenly at room temperature, then adding the chelating agent and the surfactant in sequence, stirring thoroughly, and filtering through a 0.1±0.05μm filter membrane to obtain the photoresist stripping solution.

[0069] Comparative Example 1

[0070] A photoresist stripping solution is provided, which differs from Example 1 only in that the organic amine is replaced by monoethanolamine (MEA).

[0071] Comparative Example 2

[0072] A photoresist stripping solution is provided, which differs from Example 1 only in that the organic amine is replaced by 2-hydroxypyridine-N-oxide (HPNO).

[0073] Comparative Example 3

[0074] A photoresist stripping solution is provided, which differs from Example 1 only in that the organic amine is replaced by a mixture of monoethanolamine (MEA) and 2-hydroxypyridine-N-oxide (HPNO), and the mass ratio of monoethanolamine to 2-hydroxypyridine-N-oxide is 1.2:1.8.

[0075] Experimental testing

[0076] Prepare four pieces of 100cm 2 An aluminum-based material coated with an AZ4562 photoresist film having a thickness of 5 μm was immersed in the stripping solutions prepared in Example 1 and Comparative Examples 1-3, respectively, and cleaned at room temperature (25° C.). The extent of photoresist removal on the surface of the aluminum-based material was observed visually every 5 minutes. When substantially all of the photoresist was removed, the material was taken out and the time was recorded. The material was spray-rinsed with distilled water for 3 minutes and then dried with nitrogen. The amount of photoresist residue on the surface of the substrate (whether any residue remained) and the number of corrosion points on the substrate (how many corrosion sites there were) were then observed using a 5x microscope. The recorded results are shown in Table 1.

[0077] Table 1 Results of photoresist treatment with different stripping solutions

[0078]

[0079] As shown in Table 1, the stripping solution prepared in Example 1 can clean the photoresist film in just 10-15 minutes at room temperature. Furthermore, the cleaning results show that the stripping solution leaves virtually no residue and is virtually non-corrosive to the substrate. Therefore, the stripping solution prepared in Example 1 of the present invention removes residue while exhibiting minimal corrosion to the substrate during photoresist processing, effectively meeting the requirements of processes requiring high precision and quality.

[0080] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0081] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A photoresist stripping solution, characterized in that: Calculated in parts by weight, including: 32-58 parts of organic amine, 0.5-2.5 parts of chelating agent, 0.2-2 parts of surfactant and 50-80 parts of organic solvent; Wherein, the organic amine is the reaction product of 2-hydroxypyridine-N-oxide and monoethanolamine after esterification reaction; The preparation method of the organic amine comprises: S1. Adding protective groups: Weigh monoethanolamine and dissolve it in ethanol solvent. Adjust the pH of the reaction solution to 8.0-8.

5. Then gradually add benzyl chloroformate over 1 hour. After all the benzyl chloroformate is added, stir and react at room temperature for 10-15 hours. After the reaction is completed, reduce the pressure until the solvent is completely evaporated. After extraction and drying, obtain benzyloxycarbonyl-protected monoethanolamine; S2, react with 2-hydroxypyridine-N-oxide: Under nitrogen, weigh benzyloxycarbonyl-protected monoethanolamine and N,N-dimethylacetamide, mix thoroughly, then add 1,3-dicyclohexylcarbodiimide and 4-dimethylaminopyridine in sequence. Stir at room temperature for half an hour, then gradually add 2-hydroxypyridine-N-oxide. After the addition is complete, stir at room temperature for 10-20 hours, dry under reduced pressure, and separate by column chromatography to obtain a benzyloxycarbonyl-protected organic amine. S3, removal of protecting groups: The benzyloxycarbonyl-protected organic amine and ethanol are mixed in a reaction kettle, a palladium carbon catalyst is added, and hydrogen is introduced. After stirring at room temperature for 4-6 hours, the solid is filtered out and dried under reduced pressure to obtain the final product, the organic amine.

2. A photoresist stripping solution according to claim 1, characterized in that: The chelating agent is one or more combinations of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, and triethylenetetraaminehexaacetic acid.

3. A photoresist stripping solution according to claim 1, characterized in that: The surfactant is an anionic surfactant, including one or more combinations of sodium dodecylbenzenesulfonate, sodium hexadecylbenzenesulfonate, sodium octadecylbenzenesulfonate, sodium dodecyl alcohol polyoxyethylene ether sulfate, ammonium lauryl sulfate, and sodium lauryl alcohol polyoxyethylene ether sulfate.

4. A photoresist stripping solution according to claim 1, characterized in that: The organic solvent is one or more combinations of N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide, diethylene glycol butyl ether, diethylene glycol methyl ether, triethylene glycol butyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, dipropylene glycol methyl ether, diethylene glycol ethyl ether, ethylene glycol monoethyl ether, tetrahydrofurfuryl alcohol, butanol, benzyl alcohol, ethylene glycol, propylene glycol, and glycerol.

5. The photoresist stripping solution according to claim 1, wherein In the S1, the mass ratio of monoethanolamine, benzyl chloroformate and ethanol is 0.6-1.2:1.8-3.6:10-20.

6. The photoresist stripping solution according to claim 1, wherein In the S2, the mass ratio of benzyloxycarbonyl-protected monoethanolamine, 2-hydroxypyridine-N-oxide and N,N-dimethylacetamide is 0.8-1.6:1.2-2.4:10-20.

7. The photoresist stripping solution according to claim 1, wherein In the above-mentioned S2, the mass ratio of 1,3-dicyclohexylcarbodiimide, 4-dimethylaminopyridine and benzyloxycarbonyl-protected monoethanolamine is 2.1-4.2:1.2-2.4:

1.

8. The photoresist stripping solution according to claim 1, wherein In the S3, the palladium content of the catalyst palladium carbon is 5%, and the amount of the catalyst added is 12%-18% of the mass of the benzyloxycarbonyl-protected organic amine; in the S3, the mass ratio of the benzyloxycarbonyl-protected organic amine to ethanol is 1:6-12.

9. A method for preparing a photoresist stripping solution according to claim 1, characterized in that: include: First, the organic amine and the organic solvent are mixed and stirred at room temperature, and then the chelating agent and the surfactant are added in sequence. After sufficient stirring, the mixture is filtered using a 0.1±0.05 μm filter membrane to obtain a photoresist stripping solution.

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