A high heat-resistant semiconductor element bonding film and a method for producing the same

Abstract

The application provides a high-heat-resistant semiconductor element bonding film and a preparation method thereof, relates to the technical field of bonding films, and is prepared from the following raw materials in parts by weight: hyperbranched polyetherimide epoxy compound 30-40 parts, amino-terminated hyperbranched polysiloxane HPSi-NH2 3-5 parts, 3,3'-diamino-4,4'-difluorodiphenyl sulfone 3-5 parts, bicyclo[2.2.1]heptane dimethylamine 1-3 parts, coupling agent 1-3 parts, conductive filler 40-50 parts, and solvent 35-45 parts. The high-heat-resistant semiconductor element bonding film disclosed by the application has good mechanical properties, low warping, strong bonding force, sufficient heat aging resistance, good conductive performance, and long service life.

Description

Technical Field

[0001] The present invention relates to the technical field of bonding films, and in particular to a high-heat-resistant semiconductor element bonding film and a preparation method thereof. Background Art

[0002] Semiconductor devices, electronic devices with active elements that utilize the electrical properties of semiconductors, are widely used in audio equipment, communication equipment, computers, and household appliances. When mounting semiconductor elements in semiconductor devices, the bonding method using lead-containing solder is widely known. However, in recent years, due to increased awareness of environmental issues, actions to restrict the use of lead have been promoted. Other types of solder on the market also have more or less technical defects such as high cost, easy damage to other parts around the semiconductor element, poor wetting and diffusion, and difficulty in achieving a balance between overflow and bonding strength. It is precisely in this situation that semiconductor element bonding films, which are made by mixing conductive fine metal particles into thermosetting resin and forming them into a film, have come into being. Their emergence has attracted widespread attention and great attention from people in the industry.

[0003] To achieve good adhesion, existing semiconductor bonding films contain a certain percentage of resin. This results in point contact between metal particles, preventing sufficient thermal conductivity and resulting in insufficient heat resistance. Furthermore, since high temperatures can degrade the thermosetting resin in these films, they are unsuitable for connecting high-heat-generating power semiconductors. Furthermore, commercially available semiconductor bonding films also suffer from various technical deficiencies, including inadequate performance stability due to compatibility issues, and the need for further improvement in thermal aging resistance and mechanical properties.

[0004] To address the aforementioned issues, patent application CN106574151B discloses an adhesive film and a semiconductor processing method using the adhesive film. The adhesive film exhibits excellent heat resistance and stress relaxation properties, and achieves high conductivity suitable for use as back electrodes in power semiconductors without the use of expensive precious metals such as silver. The film prevents leakage from the component and provides sufficient bonding strength. The conductive adhesive film comprises at least two metal particles containing Cu and a polymer having a polydimethylsiloxane backbone. Furthermore, a dicing die bonding film formed by laminating a dicing tape on the conductive bonding film is provided, as well as a method for processing semiconductor wafers using the adhesive film and the dicing die bonding film. However, the heat resistance and mechanical properties of the bonding film still require further improvement.

[0005] Therefore, the development of a high-heat-resistant semiconductor element bonding film with good mechanical properties, low warping, strong adhesion, sufficient heat aging resistance, good conductivity and long service life and its preparation method meets market demand, has broad market value and application prospects, and is of great significance to promoting the further development and application of semiconductor element bonding films. Summary of the Invention

[0006] The main purpose of the present invention is to provide a high heat-resistant semiconductor element bonding film with good mechanical properties, low warping, strong adhesion, sufficient heat aging resistance, good conductivity and long service life, and a preparation method thereof.

[0007] To achieve the above objectives, the present invention provides a high-heat-resistant semiconductor element bonding film, which is made from the following raw materials in parts by weight: 30-40 parts of a hyperbranched polyetherimide epoxy compound, 3-5 parts of an amino-terminated hyperbranched polysiloxane HPSi-NH2, 3-5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 1-3 parts of bicyclo[2.2.1]heptanedimethylamine, 1-3 parts of a coupling agent, 40-50 parts of a conductive filler, and 35-45 parts of a solvent.

[0008] Preferably, the hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B.

[0009] Preferably, the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0010] Preferably, the coupling agent is at least one of silane coupling agent KH550, silane coupling agent KH560, and silane coupling agent KH570.

[0011] Preferably, the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of (2-4):1:(0.8-1.2).

[0012] Preferably, the particle size of the conductive filler is 400-800 mesh.

[0013] Preferably, the solvent is toluene.

[0014] Another object of the present invention is to provide a method for preparing the high heat-resistant semiconductor element bonding film, comprising the following steps: mixing the raw materials evenly according to weight proportions, coating the mixture on a base film, and thermally curing the mixture to obtain a high heat-resistant semiconductor element bonding film.

[0015] Preferably, the thermal curing temperature is 95-110° C. and the time is 3-5 hours.

[0016] Preferably, the thickness of the high heat-resistant semiconductor element bonding film is 45-60 μm.

[0017] Due to the application of the above technical solution, the present invention has the following beneficial effects:

[0018] (1) The method for preparing a high-heat-resistant semiconductor element bonding film provided by the present invention has a simple process, convenient operation and control, high preparation efficiency and finished product qualification rate, is suitable for continuous large-scale production, consumes less energy, has low dependence on equipment, and has high promotion and application value.

[0019] (2) The high heat-resistant semiconductor element bonding film provided by the present invention is made of the following raw materials in parts by weight: 30-40 parts of hyperbranched polyetherimide epoxy compound, 3-5 parts of terminal amino hyperbranched polysiloxane HPSi-NH2, 3-5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 1-3 parts of bicyclo[2.2.1]heptanedimethylamine, 1-3 parts of coupling agent, 40-50 parts of conductive filler, and 35-45 parts of solvent. Through the mutual coordination and joint action of the raw materials, the bonding film material has good mechanical properties, low warping, strong adhesion, sufficient heat aging resistance, good conductivity, and long service life.

[0020] (3) The high heat-resistant semiconductor element bonding film provided by the present invention has an amino group-containing raw material that undergoes an epoxy ring-opening reaction with an epoxy group-containing raw material, and simultaneously introduces hyperbranched polyetherimide, hyperbranched polysiloxane, fluorinated diphenyl sulfone, bicyclo[2.2.1]heptane and hydroxyl structures into the molecular structure of the bonding film. These structures, under the multiple effects of electronic effect, steric effect and conjugation effect, can give the product excellent mechanical properties, stability, bonding properties and heat aging resistance; form an interpenetrating network structure, wrap the conductive filler in the interpenetrating network, form a dense electron conduction channel, and effectively improve the conductivity and conductive stability. DETAILED DESCRIPTION

[0021] The following description is intended to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are merely examples, and those skilled in the art may conceive of other obvious variations. Example 1

[0022] A high-heat-resistant semiconductor element bonding film is made from the following raw materials, measured in parts by weight: 30 parts of a hyperbranched polyetherimide epoxy compound, 3 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 3 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 1 part of bicyclo[2.2.1]heptanedimethylamine, 1 part of a coupling agent, 40 parts of a conductive filler, and 35 parts of a solvent.

[0023] The hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B; the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0024] The coupling agent is silane coupling agent KH550; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of 2:1:0.8; the particle size of the conductive filler is 400 mesh; and the solvent is toluene.

[0025] A method for preparing the high-heat-resistant semiconductor element bonding film includes the following steps: mixing the raw materials uniformly according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain the high-heat-resistant semiconductor element bonding film; the thermal curing temperature is 95°C and the time is 3 hours; the thickness of the high-heat-resistant semiconductor element bonding film is 50 μm. Example 2

[0026] A high-heat-resistant semiconductor element bonding film is made from the following raw materials, measured in parts by weight: 33 parts of a hyperbranched polyetherimide epoxy compound, 3.5 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 3.5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 1.5 parts of bicyclo[2.2.1]heptanedimethylamine, 1.5 parts of a coupling agent, 43 parts of a conductive filler, and 37 parts of a solvent.

[0027] The hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B; the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0028] The coupling agent is silane coupling agent KH560; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of 2.5:1:0.9; the particle size of the conductive filler is 500 mesh; and the solvent is toluene.

[0029] A method for preparing the high-heat-resistant semiconductor element bonding film includes the following steps: mixing the raw materials uniformly according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain a high-heat-resistant semiconductor element bonding film; the thermal curing temperature is 100°C and the time is 3.5 hours; the thickness of the high-heat-resistant semiconductor element bonding film is 50 μm. Example 3

[0030] A high-heat-resistant semiconductor element bonding film is made from the following raw materials, measured in parts by weight: 35 parts of a hyperbranched polyetherimide epoxy compound, 4 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 4 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 2 parts of bicyclo[2.2.1]heptanedimethylamine, 2 parts of a coupling agent, 45 parts of a conductive filler, and 40 parts of a solvent.

[0031] The hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B; the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0032] The coupling agent is silane coupling agent KH570; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of 3:1:1; the particle size of the conductive filler is 600 mesh; and the solvent is toluene.

[0033] A method for preparing the high-heat-resistant semiconductor element bonding film includes the following steps: mixing the raw materials uniformly according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain the high-heat-resistant semiconductor element bonding film; the thermal curing temperature is 103°C and the time is 4 hours; the thickness of the high-heat-resistant semiconductor element bonding film is 50 μm. Example 4

[0034] A high-heat-resistant semiconductor element bonding film is made from the following raw materials, measured in parts by weight: 38 parts of a hyperbranched polyetherimide epoxy compound, 4.5 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 4.5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 2.5 parts of bicyclo[2.2.1]heptanedimethylamine, 2.5 parts of a coupling agent, 48 parts of a conductive filler, and 43 parts of a solvent.

[0035] The hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B; the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0036] The coupling agent is a mixture of silane coupling agent KH550, silane coupling agent KH560, and silane coupling agent KH570 in a mass ratio of 1:3:2; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of 3.5:1:1.1; the particle size of the conductive filler is 750 mesh; and the solvent is toluene.

[0037] A method for preparing the high-heat-resistant semiconductor element bonding film includes the following steps: mixing the raw materials uniformly according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain a high-heat-resistant semiconductor element bonding film; the thermal curing temperature is 108°C and the time is 4.5 hours; the thickness of the high-heat-resistant semiconductor element bonding film is 50 μm. Example 5

[0038] A high-heat-resistant semiconductor element bonding film is made from the following raw materials, measured in parts by weight: 40 parts of a hyperbranched polyetherimide epoxy compound, 5 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 3 parts of bicyclo[2.2.1]heptanedimethylamine, 3 parts of a coupling agent, 50 parts of a conductive filler, and 45 parts of a solvent.

[0039] The hyperbranched polyetherimide epoxy compound is prepared according to the method of Example 35 of the Chinese invention patent with authorization publication number CN110951076B; the amino-terminated hyperbranched polysiloxane HPSi-NH2 is prepared according to the method of Example 1 of the Chinese invention patent with authorization publication number CN110156948B.

[0040] The coupling agent is silane coupling agent KH550; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of 4:1:1.2; the particle size of the conductive filler is 800 mesh; and the solvent is toluene.

[0041] A method for preparing the high-heat-resistant semiconductor element bonding film includes the following steps: mixing the raw materials uniformly according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain the high-heat-resistant semiconductor element bonding film; the thermal curing temperature is 110°C and the time is 5 hours; the thickness of the high-heat-resistant semiconductor element bonding film is 50 μm.

[0042] Comparative Example 1

[0043] A high heat-resistant semiconductor element bonding film and a preparation method thereof are basically the same as those in Example 1, except that 3,3'-diamino-4,4'-difluorodiphenyl sulfone is not added.

[0044] Comparative Example 2

[0045] A high heat-resistant semiconductor element bonding film and a preparation method thereof are basically the same as those in Example 1, except that bicyclo[2.2.1]heptanedimethylamine is not added.

[0046] To further illustrate the beneficial technical effects of the high heat-resistant semiconductor element bonding film products according to various embodiments of the present invention, relevant performance tests were conducted on the bonding films prepared in each example. The test results are shown in Table 1. The test methods are as follows:

[0047] (1) Volume resistivity: The volume resistivity of the high heat-resistant semiconductor element bonding film in each example was measured using the method for measuring the volume resistivity of solid materials specified in GB / T1410-2006.

[0048] (2) Resistance to moisture and heat aging: Each sample of the high heat-resistant semiconductor element bonding film was placed in an environment of 90°C and 95% relative humidity for 200 hours. After cooling to room temperature, the volume resistivity was tested again according to the method in (1), and the volume resistivity retention rate was calculated. The larger the value, the better the resistance to moisture and heat aging.

[0049] (3) Peel strength: Peel strength is tested according to IPC-TM-650 2.4.9 standard.

[0050] (4) High temperature resistance: The adhesive film was tightly bonded to a 50 μm CPI film, and then subjected to a heat treatment in an oven at 200°C for 30 min, and the warping of the film was observed.

[0051] (5) Tensile strength: refer to the test method in GB / T 13022-1991 for tensile performance test.

[0052] Table 1

[0053]

[0054] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions merely illustrate the principles of the present invention. Various changes and modifications may be made to the present invention without departing from the spirit and scope of the present invention. Such changes and modifications are intended to fall within the scope of the present invention. The scope of protection claimed by the present invention is defined by the appended claims and their equivalents.

Claims

1. A highly heat-resistant semiconductor element bonding film, characterized in that: The invention comprises the following raw materials in parts by weight: 30-40 parts of a hyperbranched polyetherimide epoxy compound, 3-5 parts of amino-terminated hyperbranched polysiloxane HPSi-NH2, 3-5 parts of 3,3'-diamino-4,4'-difluorodiphenyl sulfone, 1-3 parts of bicyclo[2.2.1]heptanedimethylamine, 1-3 parts of a coupling agent, 40-50 parts of a conductive filler, and 35-45 parts of a solvent; the conductive filler is a mixture of copper powder, aluminum powder, and conductive carbon black VXC-72 in a mass ratio of (2-4):1:(0.8-1.2).

2. The high heat-resistant semiconductor element bonding film according to claim 1, wherein The coupling agent is at least one of silane coupling agent KH550, silane coupling agent KH560, and silane coupling agent KH570.

3. The high heat-resistant semiconductor element bonding film according to claim 1, wherein The particle size of the conductive filler is 400-800 mesh.

4. The high heat-resistant semiconductor element bonding film according to claim 1, wherein The solvent is toluene.

5. A method for producing a highly heat-resistant semiconductor element bonding film according to any one of claims 1 to 4, characterized in that: The method comprises the following steps: uniformly mixing the raw materials according to weight, coating the mixture on a base film, and thermally curing the mixture to obtain a high-heat-resistant semiconductor element bonding film.

6. The method for producing a high heat-resistant semiconductor element bonding film according to claim 5, wherein: The temperature of the thermal curing is 95-110° C. and the time is 3-5 hours.

7. The method for producing a highly heat-resistant semiconductor element bonding film according to claim 5, wherein: The thickness of the high heat-resistant semiconductor element bonding film is 45-60 μm.

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