Manufacturing method and carrier plate of display device

Abstract

This disclosure relates to a method for manufacturing a display device and a carrier board. The method involves setting the reflectivity of a first region of the carrier board to be greater than that of a second region, and using a first wavelength laser with uniform energy for irradiation during the bonding process. The transmittance of the first wavelength laser in the first region is less than that in the second region, resulting in the light intensity of the first wavelength laser emitted from the first region being lower than that emitted from the second region. By utilizing the energy difference between the first and second regions, the temperature difference between the first and second regions during bonding is compensated, thereby improving the problem of inconsistent temperature distribution during bonding and improving bonding quality.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and more particularly to a method for manufacturing a display device and a substrate. Background Technology

[0002] Micro LEDs are considered the ultimate display technology due to their high brightness, high contrast and wide color gamut. The main technical bottleneck is how to accurately transfer a large number of Micro LEDs onto the driving substrate. The main processes for bonding Micro LEDs to the driving substrate include thermoforming and laser bonding. Among them, laser bonding is widely regarded as the most feasible technology for mass production due to its high bonding efficiency.

[0003] During laser bonding, planar laser bonding or line laser scanning bonding are typically used to ensure bonding efficiency. However, due to the uneven energy distribution of the laser spot, there is a significant temperature difference between the bonding edge and the center, resulting in inconsistent bonding quality. To ensure temperature uniformity in the bonding area, the laser spot is usually homogenized. However, in actual bonding, heat dissipation in the center of the spot is weaker than in the edge area, and a temperature difference still exists between the two regions. Summary of the Invention

[0004] In order to solve the above-mentioned technical problems, or at least partially solve the above-mentioned technical problems, this disclosure provides a method for manufacturing a display device and a carrier board.

[0005] On one hand, this disclosure provides a method for manufacturing a display device, including:

[0006] Provides carrier boards, light-emitting devices, and driving substrates;

[0007] An adhesive layer is formed on one side of the carrier plate;

[0008] The light-emitting device is attached to the adhesive layer on the side opposite to the carrier plate;

[0009] With the side of the light-emitting device away from the adhesive layer facing the driving substrate, a first wavelength laser is controlled to irradiate the side of the carrier plate away from the adhesive layer, thereby bonding the light-emitting device to the driving substrate.

[0010] The carrier plate includes a first region and a second region, the second region being located on at least one side of the first region, and for the first wavelength laser, the reflectivity of the first region is greater than that of the second region.

[0011] On the other hand, this disclosure also provides a carrier plate, which is applied to the manufacturing method of any of the above-mentioned display devices;

[0012] The carrier plate includes a first region and a second region, the second region being located on at least one side of the first region, and for a first wavelength laser, the reflectivity of the first region is greater than that of the second region.

[0013] The technical solution provided in this disclosure has the following advantages compared with the prior art:

[0014] The present disclosure provides a method for manufacturing a display device and a carrier board. The method includes: providing a carrier board, a light-emitting device, and a driving substrate; forming an adhesive layer on one side of the carrier board; attaching the light-emitting device to the side of the adhesive layer away from the carrier board; aligning the side of the light-emitting device away from the adhesive layer towards the driving substrate; controlling a first wavelength laser to irradiate the side of the carrier board away from the adhesive layer; and bonding the light-emitting device to the driving substrate. The carrier board includes a first region and a second region, with the second region located on at least one side of the first region. For the first wavelength laser, the reflectivity of the first region is greater than that of the second region. Therefore, by setting the reflectivity of the first region of the carrier board to be greater than that of the second region, and using a first wavelength laser with uniform energy during the bonding process, the transmittance of the first wavelength laser in the first region is less than its transmittance in the second region. This results in the light intensity of the first wavelength laser emitted from the first region being lower than that emitted from the second region. Utilizing the energy difference between the first and second regions, the temperature difference between the first and second regions during bonding is compensated, improving the problem of inconsistent temperature distribution during bonding and thus improving bonding quality. Attached Figure Description

[0015] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.

[0016] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A schematic flowchart illustrating a method for manufacturing a display device according to an embodiment of this disclosure;

[0018] Figure 2-4 A schematic diagram of the structure corresponding to each step of the manufacturing method of the display device provided in the embodiments of this disclosure;

[0019] Figure 5 This is a schematic diagram of the energy distribution of a first wavelength laser in front of and behind a carrier plate, provided in an embodiment of this disclosure.

[0020] Figure 6 for Figure 1A detailed flowchart of the process of manufacturing a display device, specifically the step of "providing a carrier board";

[0021] Figure 7 This is a schematic diagram of the process for preparing the carrier plate provided in an embodiment of the present disclosure;

[0022] Figure 8 This is a schematic diagram of a structure for forming a Bragg grating using holographic exposure, provided as an embodiment of the present disclosure.

[0023] Figure 9 This is a schematic diagram of another structure for forming a Bragg grating using holographic exposure, provided in an embodiment of the present disclosure.

[0024] Figure 10 A schematic flowchart illustrating another method for manufacturing a display device according to an embodiment of this disclosure.

[0025] Among them, 1 is the carrier plate; 10 is the initial carrier plate; 11 is the Bragg grating structure; 12 is the interference fringe; 2 is the adhesive layer; 3 is the light-emitting device; 4 is the driving substrate; 5 is the beam splitter; 6 is the reflector; S1 is the first region; S2 is the second region. Detailed Implementation

[0026] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0027] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.

[0028] The following description, in conjunction with the accompanying drawings, provides an exemplary description of the manufacturing method of the display device and the carrier board provided in the embodiments of this disclosure.

[0029] In some embodiments, such as Figure 1 As shown, the manufacturing method of this display device includes the following steps:

[0030] S110 provides a carrier board, light-emitting devices, and a driving substrate.

[0031] Among them, combined Figure 2 The carrier plate 1 includes a first region S1 and a second region S2, with the second region S2 located on at least one side of the first region S1. The first region S1 corresponds to the region with poor heat dissipation (or high temperature) mentioned in the prior art, and the second region S2 corresponds to the region with good heat dissipation (or low temperature) mentioned in the prior art.

[0032] The light-emitting device 3 includes all types of light-emitting devices known to those skilled in the art, such as LED, Micro LED and Mini LED, and is not limited herein.

[0033] The driving substrate 4 includes all types of substrates known to those skilled in the art, and is not limited thereto. After the light-emitting device 3 is bonded to the driving substrate 4, the driving substrate 4 is used to transmit driving signals to the light-emitting device 3.

[0034] S120, An adhesive layer is formed on one side of the carrier plate.

[0035] like Figure 2 As shown, an adhesive layer 2 is formed on one side surface of the carrier plate 1, and the adhesive layer 2 is used to fix the light-emitting device 3. The adhesive layer 2 includes bonding adhesive and has a certain degree of adhesion.

[0036] S130. Attach the light-emitting device to the side of the adhesive layer away from the carrier plate.

[0037] like Figure 3 As shown, the light-emitting device 3 is fixed to the side of the adhesive layer 2 away from the carrier plate 1 by utilizing the adhesive force of the adhesive layer 2. The light-emitting device 3 includes a first surface and a second surface arranged opposite to each other. The first surface faces the adhesive layer 2, and the second surface faces away from the adhesive layer 2. The second surface is provided with bonding points for bonding with the driving substrate 4.

[0038] This step is achieved using a mass transfer system, which adsorbs multiple light-emitting devices 3 and transfers them to designated positions on the adhesive layer 2, thereby arranging the light-emitting devices 3.

[0039] It should be noted that the embodiments disclosed herein do not limit the type, quantity, or arrangement of the light-emitting devices 3, and can be flexibly configured according to requirements. For example, such as... Figure 3 As shown, the light-emitting device 3 includes three types of light-emitting devices: red (R), green (G), and blue (B).

[0040] S140. With the side of the light-emitting device away from the adhesive layer facing the driving substrate, control the first wavelength laser to irradiate the side of the self-carrier plate away from the adhesive layer, and bond the light-emitting device to the driving substrate.

[0041] like Figure 4 As shown, the second surface (or bonding point) of the light-emitting device 3 faces the driving substrate 4. The bonding point of the light-emitting device 3 is aligned and in contact with the bonding point on the driving substrate 4. At the same time, the first wavelength laser is controlled to irradiate the side of the carrier plate 1 away from the adhesive layer 2. The carrier plate 1 and the adhesive layer 2 have a certain light transmittance to the first wavelength laser. The first wavelength laser can pass through the carrier plate 1 and the adhesive layer 2 and irradiate the bonding interface between the light-emitting device 3 and the driving substrate 4, thereby realizing the bonding between the light-emitting device 3 and the driving substrate 4.

[0042] Different regions of the carrier plate 1 have different reflectivities for the first wavelength laser. The reflectivity of the first region S1 is greater than that of the second region S2, i.e., R1 > R2, where R1 represents the reflectivity of the first region S1 and R2 represents the reflectivity of the second region S2. Reflectivity and transmittance are negatively correlated; the higher the reflectivity, the lower the corresponding transmittance. The transmittance of the first wavelength laser in the first region S1 is less than its transmittance in the second region S2.

[0043] Based on the background technology, the first wavelength laser before the incident plate 1 is a homogenized laser with a uniform laser energy distribution. For example... Figure 5 As shown, the reflectivity of the first region S1 of the carrier plate 1 is greater than that of the second region S2. The transmittance of the first wavelength laser is lower in the first region S1 and higher in the second region S2, resulting in an uneven energy distribution of the first wavelength laser emitted from the carrier plate 1. The energy distribution of the first wavelength laser emitted from different regions is different. The light intensity of the first wavelength laser emitted from the first region S1 is lower than that emitted from the second region S2. When laser bonding the light-emitting device 3 to the driving substrate 4, although the heat dissipation effect of the first region S1 is worse than that of the second region S2, the energy difference between the first wavelength laser emitted from the first region S1 and the second region S2 compensates for the temperature difference caused by the heat dissipation difference, reduces the temperature difference between the first region S1 and the second region S2, and is beneficial to improving the bonding effect.

[0044] It should be noted that the display device includes, but is not limited to, mobile phones, tablets, and televisions, as well as other types of display devices known to those skilled in the art, which are not limited herein. In addition to the light-emitting device 3 and the driving substrate 4, the display device obtained using this manufacturing method also includes all components known to those skilled in the art, such as the display panel, which are not limited herein. The display panel includes a display area and a non-display area, with the non-display area located on at least one side of the display area. In a direction perpendicular to the plane of the driving substrate 4, the projection of the first area S1 lies within the projection of the display area, and the projection of the second area S2 overlaps with the projection portion of the display area.

[0045] The method for manufacturing a display device provided in this embodiment includes: providing a carrier plate 1, a light-emitting device 3, and a driving substrate 4; forming an adhesive layer 2 on one side of the carrier plate 1; attaching the light-emitting device 3 to the side of the adhesive layer 2 away from the carrier plate 1; aligning the side of the light-emitting device 3 away from the adhesive layer 2 toward the driving substrate 4; controlling a first wavelength laser to irradiate the side of the carrier plate 1 away from the adhesive layer 2; and bonding the light-emitting device 3 to the driving substrate 4; wherein the carrier plate 1 includes a first region S1 and a second region S2, the second region S2 is located on at least one side of the first region S1, and for the first wavelength laser, the reflectivity of the first region S1 is greater than the reflectivity of the second region S2. Therefore, by setting the reflectivity of the first region S1 of the carrier plate 1 to be greater than that of the second region S2, and using a first wavelength laser with uniform energy for irradiation during the bonding process, the transmittance of the first wavelength laser in the first region S1 is less than that in the second region S2, so that the light intensity of the first wavelength laser emitted from the first region S1 is lower than that of the laser emitted from the second region S2. By utilizing the energy difference of the first wavelength laser emitted from the first region S1 and the second region S2, the temperature difference between the first region S1 and the second region S2 during bonding is compensated, thereby improving the problem of inconsistent temperature distribution during bonding and improving bonding quality.

[0046] In some embodiments, the first wavelength laser includes infrared light.

[0047] In some embodiments, the wavelength λ1 of the first wavelength laser satisfies: λ1≥980nm.

[0048] In some embodiments, such as Figure 6 As shown, "providing a carrier board" includes the following steps:

[0049] S211, Provide the initial carrier board.

[0050] Combination Figure 7 The initial carrier 10 is either a photothermo-refractive (PTR) glass carrier or a glass carrier doped with the target element. The target element includes at least one of germanium, silver, lead, tin, fluoride, and bromide. Exemplarily, germanium is added to a conventional glass carrier to enhance the photosensitivity of the glass.

[0051] The initial carrier plate 10 refers to a carrier plate that has not been treated with the second wavelength laser, and whose different regions have equal reflectivity to the first wavelength laser. Here, "equal" means that the difference in reflectivity between different regions to the first wavelength laser is less than or equal to a preset threshold, within the allowable error range.

[0052] S212. Using a second wavelength laser, a Bragg grating structure is formed in the first region of the initial carrier plate to obtain the carrier plate.

[0053] In this step, the first region S1 of the initial carrier plate 10 is irradiated with a second wavelength laser. Under the action of the second wavelength laser, the refractive index within the initial carrier plate 10 undergoes a periodic change, thereby forming a Bragg grating structure 11 within the first region S1. The Bragg grating structure 11 is laid flat within the first region S1 and has a high reflectivity for lasers of the characteristic wavelength (i.e., the first wavelength laser).

[0054] In this step, the reflectivity of the first region S1 to the first wavelength laser is increased by the Bragg grating structure 11 formed in the first region S1 of the initial carrier plate 10, while the reflectivity of the second region S2 to the first wavelength laser remains unchanged. The carrier plate 1 obtained in the end has a reflectivity of the first region S1 greater than that of the second region S2.

[0055] In this embodiment, by forming a Bragg grating structure 11 in the first region S1, the reflectivity of the first wavelength laser in the first region S1 is greater than that in the second region S2. After the first wavelength laser with uniform energy passes through the carrier plate 1, the light intensity of the first wavelength laser emitted from the first region S1 is lower, while the light intensity of the first wavelength laser emitted from the second region S2 is higher. When laser bonding the light-emitting device 3 to the driving substrate 4, although the heat dissipation effect of the first region S1 is inferior to that of the second region S2, the energy difference between the first wavelength laser emitted from the first region S1 and the second region S2 compensates for the temperature difference caused by the heat dissipation difference, reduces the temperature difference between the first region S1 and the second region S2, and is beneficial to improving the bonding effect.

[0056] In some embodiments, the second wavelength laser includes ultraviolet light.

[0057] In some embodiments, the wavelength λ2 of the second wavelength laser satisfies: λ2≤355nm.

[0058] In some embodiments, the Bragg grating structure 11 includes a reflective volume Bragg grating.

[0059] In some embodiments, "forming a Bragg grating structure in a first region of the initial carrier plate" includes the following steps:

[0060] A Bragg grating structure is formed in the first region using holographic exposure.

[0061] For example, such as Figure 8-9As shown, a Bragg grating structure 11 is formed using a dual-beam holographic exposure method. A second-wavelength laser emitted from the same light source is split into two laser beams by a beam splitter 5 and a three-sided mirror 6. The angle between the two laser beams is θ. The two laser beams form interference fringes 12 in the first region S1 of the initial carrier plate 10. The interference fringes 12 generate a Bragg grating structure 11 with a periodically changing refractive index within the initial carrier plate 10. The grating period Λ of the Bragg grating structure 11 is related to the wavelength λ2 of the second-wavelength laser and the angle θ / 2, as shown in the following formula:

[0062] Λ=λ2÷2sin(θ / 2);

[0063] The peak reflection wavelength λ of the Bragg grating structure 11 is: λ=2nΛ;

[0064] Here, n represents the refractive index of the Bragg grating structure. Therefore, by adjusting the angle θ / 2, the grating period Λ can be varied over a wide range. The grating period Λ determines the wavelength range of laser light that the Bragg grating structure 11 can reflect.

[0065] It should be noted that other methods known to those skilled in the art can also be used to form the Bragg grating structure 11, such as phase masking or point-by-point writing, which are not limited here.

[0066] In some embodiments, before "forming the Bragg grating structure in the first region of the initial carrier board", the method for manufacturing the display device further includes the following steps:

[0067] Temperature distribution characteristics during the bonding connection between the light-emitting device and the driving substrate in a measurement simulation experiment;

[0068] Based on the temperature distribution feature map, the distribution location and reflectivity of the first region are determined.

[0069] The carrier plate used in the simulation test is the initial carrier plate 10, which refers to the carrier plate that has not been treated with the second wavelength laser, and the reflectivity of different regions of the initial carrier plate to the first wavelength laser is equal.

[0070] In this embodiment, during the simulation experiment, the temperature of different regions when the light-emitting device 3 and the driving substrate 4 are bonded together is measured to obtain a temperature distribution feature map. According to the temperature distribution feature map, the region with higher temperature is determined as the distribution location of the first region S1. At the same time, the reflectivity of the first region S1 is related to the temperature of the first region S1. The higher the temperature, the worse the heat dissipation effect at the corresponding location. To compensate for the temperature difference caused by heat dissipation, it is necessary to reduce the energy of the first laser wavelength at that location, that is, the higher the reflectivity.

[0071] In some embodiments, "determining the distribution location of the first region based on the temperature distribution feature map" includes the following steps:

[0072] The distribution location of the first zone is determined by the area where the temperature is greater than or equal to the first temperature threshold.

[0073] For example, scatter points with equal temperatures in the temperature distribution feature map are connected to form a closed loop. The closed loop is similar to an isotherm. The area within the closed loop where the temperature is greater than or equal to a first temperature threshold is determined as the distribution location of the first region S1.

[0074] In some embodiments, "determining the reflectance of the first region based on the temperature distribution feature map" includes the following steps:

[0075] The reflectivity of the first zone is determined based on the target temperature within the first zone;

[0076] Among them, after determining the distribution location of the first zone S1, the number of temperatures located in the first zone S1 is greater than or equal to two, the target temperature includes the average temperature or the highest temperature, and the reflectivity of the first zone S1 is positively correlated with the target temperature.

[0077] For example, after determining the distribution location of the first zone S1, the target temperature within the first zone S1 is used as a basis. The higher the target temperature, the greater the reflectivity of the first zone S1 is determined.

[0078] For example, after determining the distribution location of the first region S1, the difference between the target temperature in the first region S1 and the first temperature threshold is used as the basis. The larger the difference, the greater the reflectivity of the first region S1 is determined.

[0079] In other embodiments, for irregular temperature distributions, such as splicing screens involving metal lines distributed on the back, the distribution position and reflectivity of the first zone S1 can be flexibly adjusted.

[0080] In some embodiments, the method of manufacturing the display device further includes the following steps:

[0081] Measure the first temperature of the first region and the second temperature of the second region when the light-emitting device is bonded to the driving substrate;

[0082] The reflectivity of the first region is adjusted based on the temperature difference between the first and second temperatures.

[0083] The first temperature is obtained by acquiring the temperature at at least two locations within the first zone S1 and calculating the average value. The second temperature is obtained by acquiring the temperature at at least two locations within the second zone S2 and calculating the average value. The temperature difference between the first and second temperatures is used to verify whether the reflectivity of the first zone S1 is appropriate. If the temperature difference between the first and second temperatures is too large, exceeding the maximum allowable temperature difference, the reflectivity of the first zone S1 needs to be adjusted.

[0084] In some embodiments, "adjusting the reflectivity of the first region based on the temperature difference between the first temperature and the second temperature" includes the following steps:

[0085] When the temperature difference is greater than the second temperature threshold, the reflectivity of the first zone is increased.

[0086] The second temperature threshold is greater than or equal to 0℃. In the most ideal state, the first temperature equals the second temperature, and there is no temperature difference between them.

[0087] In this embodiment, when the first temperature is greater than the second temperature, the temperature difference between the first temperature and the second temperature is compared with the second temperature threshold. If the temperature difference is greater than the second temperature threshold, it indicates that the temperature difference between the first region S1 and the second region S2 is large and exceeds the allowable range. It is necessary to further reduce the temperature of the first region S1, thereby increasing the reflectivity of the first region S1 and further reducing the energy of the first wavelength light emitted from the first region S1.

[0088] For example, the second temperature threshold is equal to 10°C. When the difference between the first temperature and the second temperature is greater than or equal to 10°C, it indicates that the reflectivity of the first region S1 to the first wavelength laser is too low and the reflectivity of the first region S1 needs to be increased. When the difference between the first temperature and the second temperature is less than 10°C, it indicates that the reflectivity of the first region S1 to the first wavelength laser is appropriate and the reflectivity of the first region S1 does not need to be adjusted.

[0089] It should be noted that the higher the reflectivity of the first region S1 to the first wavelength laser, the lower the intensity of the first wavelength laser emitted from the first region S1. When the intensity decreases to a certain level, it will affect the bonding effect between the light-emitting device 3 and the driving substrate 4. In order to ensure the bonding effect between the light-emitting device 3 and the driving substrate 4, it is necessary to control the intensity of the first wavelength laser emitted from the first region S1 to be greater than or equal to the minimum intensity requirement for bonding, that is, to limit the maximum reflectivity of the first region S1 to the first wavelength laser.

[0090] This embodiment of the disclosure increases the reflectivity of the first region S1 for a first wavelength laser by forming a Bragg grating structure 11 within the first region S1. The formula for calculating the reflectivity of the Bragg grating structure 11 is as follows:

[0091] R = (sinβ - sinα) 2 ÷(sinβ+sinα) 2 ;

[0092] Where R represents reflectivity, α represents the incident angle, and β represents the diffraction angle. The reflectivity of the Bragg grating structure 11 depends on the relationship between the incident angle α and the diffraction angle β. The reflectivity is maximum when the incident angle α equals the diffraction angle β; as the difference between the incident angle α and the diffraction angle β increases, the reflectivity gradually decreases.

[0093] Since the diffraction angle is not a control parameter, it changes in response to changes in relevant control parameters. According to the grating equation: Nλ=d×(sinα±sinβ);

[0094] Where N represents the spectral order, λ represents the wavelength of the laser reflected by the Bragg grating structure 11, and d represents the grating constant, which is the distance between two adjacent scribe lines on the Bragg grating structure 11.

[0095] The difference between the incident angle α and the diffraction angle β can be controlled by adjusting at least one of the following parameters: spectral order N, wavelength λ of the reflected laser, and grating constant d. When increased reflectivity is desired, the difference between the incident angle α and the diffraction angle β is decreased; conversely, when decreased reflectivity is desired, the difference between the incident angle α and the diffraction angle β is increased.

[0096] It should be noted that the Bragg grating structure 11 is a fixed structure. Once formed, its structure cannot be changed. When the reflectivity of the Bragg grating structure 11 needs to be adjusted through verification experiments, the control parameters that need to be adjusted and their values ​​are determined. Then, a new Bragg grating structure 11 is formed again in the first region S1 of the initial carrier plate 10 according to the parameter values.

[0097] For example, such as Figure 10 As shown, the manufacturing method of this display device includes the following steps:

[0098] S310. Measure the temperature distribution characteristics of the light-emitting device and the driving substrate during the bonding connection in the simulation test, and determine the distribution location and reflectivity of the first region based on the temperature distribution characteristics.

[0099] The difference between the simulation test and mass bonding lies in the different carrier plates used. The simulation test uses the initial carrier plate 10 as the carrier plate and performs bonding between the light-emitting device 3 and the driving substrate 4 according to steps S120 to S140. The temperature of different regions of the initial carrier plate is measured during the bonding process to obtain a temperature distribution feature map. According to the temperature distribution feature map, the region with a temperature greater than the first temperature threshold is determined as the distribution location of the first region S1. At the same time, the reflectivity of the first region S1 is related to the temperature of the first region S1. The higher the temperature, the worse the heat dissipation effect at the corresponding location. To compensate for the temperature difference caused by heat dissipation, it is necessary to reduce the energy of the first laser wavelength at that location, that is, the higher the reflectivity.

[0100] S320: A Bragg grating structure is formed in the first region of the initial substrate using holographic exposure.

[0101] In this step, a Bragg grating structure 11 is formed in the first region S1 of the initial carrier plate 10 using holographic exposure. A second wavelength laser is used as the processing laser. By adjusting the angle θ / 2, the distribution range of the grating period Λ is controlled, thereby determining the wavelength range of the laser that the Bragg grating structure 11 can reflect, which is the wavelength range of the first wavelength laser.

[0102] The reflectivity of the first region S1 of the carrier plate 1 obtained in this step for the first wavelength laser is greater than that of the second region S2 for the first wavelength laser, and the carrier plate 1 obtained in this step is applied to S330 and subsequent steps.

[0103] S330. An adhesive layer is formed on one side of the carrier plate, and the light-emitting devices are arranged on the side of the adhesive layer away from the carrier plate.

[0104] This step is similar to S120 to S130. For details, please refer to the explanations in S120 to S130. It will not be repeated here.

[0105] S340. Mass bonding is performed between the arranged light-emitting devices and the driving substrate. During bonding, the homogenized first wavelength laser is subjected to the Bragg grating structure and generates an energy distribution gradient in the first and second regions when it passes through the carrier plate.

[0106] This step is similar to S140, and the details can be found in the explanation of S140, so it will not be repeated here.

[0107] S350, during the bonding process, measures the first temperature of the first region and the second temperature of the second region, and adjusts the reflectivity of the first region based on the temperature difference between the first and second temperatures.

[0108] The purpose of this step is to verify whether the reflectivity of the first region S1 for the first wavelength laser is suitable. If the temperature difference between the first temperature and the second temperature is greater than or equal to the first temperature threshold (e.g., the first temperature is greater than the second temperature and the temperature difference is greater than 10°C), it indicates that the temperature difference between the first region S1 and the second region S2 is large, exceeding the allowable range. Therefore, it is necessary to further reduce the temperature of the first region S1, thereby increasing the reflectivity of the first region S1 and further reducing the energy of the first wavelength light emitted from the first region S1. If the temperature difference between the first temperature and the second temperature is less than the first temperature threshold, it indicates that the reflectivity of the first region S1 for the first wavelength laser is suitable, and it is not necessary to adjust the reflectivity of the first region S1.

[0109] Based on the above implementation methods, such as Figure 2As shown in Figure 7, this embodiment of the present disclosure also provides a carrier plate 1, which includes a first region S1 and a second region S2, with the second region S2 located on at least one side of the first region S1. For a first wavelength laser, the reflectivity of the first region S1 is greater than that of the second region S2. Applying the carrier plate 1 to any of the above-described methods for manufacturing a display device has corresponding beneficial effects. To avoid repetition, it will not be limited here.

[0110] The first region S1 corresponds to the region with poor heat dissipation (or high temperature) mentioned in the background art, and the second region S2 corresponds to the region with good heat dissipation (or low temperature) mentioned in the background art.

[0111] The reflectivity of region S1 is greater than that of region S2, therefore the transmittance of the first wavelength laser in region S1 is less than that in region S2. For example... Figure 5 As shown, the first wavelength laser before incident on the carrier plate 1 is a homogenized laser with uniform laser energy distribution. After passing through the carrier plate 1, the light intensity of the first wavelength laser emitted from the first region S1 is lower than that of the laser emitted from the second region S2. By utilizing the energy difference between the first region S1 and the second region S2, the temperature difference caused by the difference in heat dissipation between the two is compensated, thereby reducing the temperature difference between the first region S1 and the second region S2, which is beneficial to improving the bonding effect.

[0112] In some embodiments, such as Figure 7 As shown, the first region S1 includes a Bragg grating structure 11.

[0113] In this embodiment, a Bragg grating structure 11 is formed in the first region S1. The Bragg grating structure 11 increases the reflectivity of the first region S1 to the first wavelength laser, while the reflectivity of the second region S2 to the first wavelength laser remains unchanged, so that the reflectivity of the first region S1 of the carrier plate 1 is greater than the reflectivity of the second region S2.

[0114] In some embodiments, the Bragg grating structure 11 includes a reflective volume Bragg grating structure.

[0115] In some embodiments, the carrier plate includes a photothermal refractive glass carrier plate or a glass carrier plate doped with the target element.

[0116] The carrier plate 1 is a PTR glass carrier plate or a glass carrier plate doped with the target element, which has strong photosensitivity. The refractive index inside the carrier plate 1 can be changed by irradiation with a second wavelength laser, forming a Bragg grating structure 11 with periodically changing refractive index in the first region S1. The target element includes at least one of germanium, silver, lead, tin, fluoride, and bromide.

[0117] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0118] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for manufacturing a display device, characterized in that, include: Provides carrier boards, light-emitting devices, and driving substrates; An adhesive layer is formed on one side of the carrier plate; The light-emitting device is attached to the adhesive layer on the side opposite to the carrier plate; With the side of the light-emitting device away from the adhesive layer facing the driving substrate, a first wavelength laser is controlled to irradiate the side of the carrier plate away from the adhesive layer, thereby bonding the light-emitting device to the driving substrate. The carrier plate includes a first region and a second region, the second region being located on at least one side of the first region, and for the first wavelength laser, the reflectivity of the first region is greater than that of the second region; The carrier plate includes: Provide initial carrier board; Temperature distribution characteristics of the light-emitting device and the driving substrate during the bonding connection in the measurement simulation test; wherein, the carrier used in the simulation test is the initial carrier; Based on the temperature distribution feature map, the distribution location and reflectivity of the first region are determined; Using a second wavelength laser, a Bragg grating structure is formed in the first region of the initial carrier plate to obtain the carrier plate.

2. The manufacturing method according to claim 1, characterized in that, A Bragg grating structure is formed in the first region of the initial carrier plate, including: The Bragg grating structure is formed in the first region using a holographic exposure method.

3. The manufacturing method according to claim 1, characterized in that, The wavelength λ1 of the first wavelength laser satisfies: λ1≥980nm; The wavelength λ2 of the second wavelength laser satisfies: λ2≤355nm.

4. The manufacturing method according to claim 1, characterized in that, Based on the temperature distribution feature map, the distribution location of the first region is determined, including: The distribution location of the first region is determined by the area where the temperature is greater than or equal to the first temperature threshold.

5. The manufacturing method according to claim 4, characterized in that, Based on the temperature distribution feature map, the reflectivity of the first region is determined, including: The reflectivity of the first region is determined based on the target temperature within the first region; wherein the target temperature includes the average temperature or the maximum temperature, and the reflectivity of the first region is positively correlated with the target temperature.

6. The manufacturing method according to claim 1, characterized in that, Also includes: Measure the first temperature of the first region and the second temperature of the second region when the light-emitting device is bonded to the driving substrate; The reflectivity of the first region is adjusted based on the temperature difference between the first temperature and the second temperature.

7. The manufacturing method according to claim 6, characterized in that, Adjusting the reflectivity of the first region based on the temperature difference between the first temperature and the second temperature includes: When the temperature difference is greater than the second temperature threshold, the reflectivity of the first region is increased.

8. A carrier plate, characterized in that, The carrier plate is applied to the manufacturing method of the display device as described in any one of claims 1-7; The carrier plate includes a first region and a second region, the second region being located on at least one side of the first region, and for a first wavelength laser, the reflectivity of the first region is greater than that of the second region.

9. The carrier plate according to claim 8, characterized in that, The first region includes a Bragg grating structure.

10. The carrier plate according to claim 8, characterized in that, The carrier plate includes a photothermal refractive glass carrier plate or a glass carrier plate doped with the target element.

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