A uniform temperature controlled dry etching machine

Abstract

The present invention discloses a uniform temperature-controlled dry etcher, which relates to the field of semiconductor etching technology. It comprises a workbench, the upper side of which is fixedly connected to a mirror-distributed fixed frame, the upper side of which is commonly fixedly connected to a connecting frame, the connecting frame is fixedly connected to a fixed cover, the inner side of which is provided with a plasma manufacturing module, the mirror-distributed fixed frames are all slidably connected to electric sliders, a slide table is fixedly connected between the mirror-distributed electric sliders, the upper side of which is slidably and rotatably connected to a first sliding rod, the first sliding rod is used to provide support for a silicon wafer. The present invention timely shortens the distance between the silicon wafer and the plasma manufacturing module according to the changes in the exhaust gas in the etching chamber, so that the silicon wafer is timely in a temperature region that meets the work requirements, changes the temperature around the silicon wafer in a passive manner, and keeps the silicon wafer stable when being etched, thereby realizing temperature control of the silicon wafer.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor etching, and in particular to a uniform temperature-controlled dry etcher. Background Art

[0002] Etcher is a crucial process equipment in semiconductor manufacturing and other precision processing fields. Its function is to accurately remove unnecessary material layers on silicon wafers (wafers) to form the microstructure required for integrated circuits. Etchers can be divided into dry etcher and wet etcher according to different etching processes. Wet etcher is a device that immerses silicon wafers in liquid for chemical treatment (using liquid to remove unnecessary material layers on silicon wafers), while dry etcher uses etching gas to chemically impact or physically collide with silicon wafers to remove unnecessary material layers on silicon wafers. Take dry etcher as an example:

[0003] Dry etcher produces waste gas during the etching process of silicon wafers. The waste gas is mainly composed of the products of the reaction between the etching gas and the surface of the silicon wafer (including solid particles, gaseous reactants, etc.). In the process of etching silicon wafers, vacuum extraction is usually used to treat the etching waste gas. After the waste gas is pumped out by the vacuum pump (the waste gas contains a variety of chemical substances, and some chemical substances will crystallize at room temperature), the vacuum pump suction port is close to the etching chamber and the air outlet is far away from the etching chamber, which will cause a temperature difference between the vacuum pump suction port and the air outlet (the position of the vacuum pump outlet is exposed to the outside). In the environment of the boundary, the position of the vacuum pump outlet is at room temperature), and the exhaust gas will form crystals in the room temperature environment and adhere to the exhaust port of the vacuum pump. When the vacuum pump outlet is blocked by the crystals, the amount of exhaust gas extracted by the vacuum pump will be reduced, which will make the exhaust gas in the etching chamber unable to be extracted normally. As the etching gas etches the silicon wafer, the exhaust gas generated between the two will accumulate more and more, resulting in a gradual increase in the pressure in the etching chamber. When the pressure in the etching chamber increases, the flow rate of the airflow near the etching gas nozzle will be reduced, resulting in temperature stratification in the etching chamber, and even prolonging the etching time of the silicon wafer. Summary of the invention

[0004] In order to solve the problems mentioned in the above background technology, the present invention provides a uniform temperature controlled dry etching machine.

[0005] The technical solution of the present invention is: a uniform temperature-controlled dry etcher, comprising a workbench, the workbench is provided with an operation panel, a mirror-distributed fixed frame is fixedly connected to the upper side of the workbench, a connecting frame is commonly fixedly connected to the upper sides of the mirror-distributed fixed frames, a fixed cover is fixedly connected to the connecting frame, a plasma manufacturing module is arranged on the inner side of the fixed cover, the fixed cover is fixedly connected and connected to a vacuum pump electrically connected to the operation panel, a side of the vacuum pump away from the fixed cover is fixedly connected and connected to a first gas pipe, the mirror-distributed fixed frames are all slidably connected to an electric slider electrically connected to the operation panel, a slide is fixedly connected between the mirror-distributed electric sliders, a chamber is arranged on the inner side of the slide, a first sliding rod is slidably and rotatably connected to the upper side of the slide, the lower part of the first sliding rod is located in the chamber, and the first sliding rod is used to provide support for the silicon wafer.

[0006] Furthermore, the slide is slidably connected to an electric swivel located in the chamber, the electric swivel is electrically connected to the operation panel, the electric swivel is fixed to the first sliding rod, the electric swivel is used to drive the first sliding rod to rotate, and a monitoring component is provided on the side of the fixed cover close to the vacuum pump, and the monitoring component is used to monitor the pressure in the fixed cover.

[0007] Furthermore, the monitoring component includes a fixed shell, which is fixedly connected to the outside of the fixed cover and close to the side of the vacuum pump. The fixed shell is located below the vacuum pump and is communicated with the fixed cover. A piston rod is slidably connected inside the fixed shell, and a spring is arranged between the piston rod and the fixed shell. Hydraulic oil is stored in the fixed shell and the chamber. A side of the fixed shell away from the fixed cover is fixedly connected and communicated with a liquid guide tube, the lower side of the liquid guide tube passes through the slide and is communicated with the chamber, and a cleaning component is arranged on the inner side of the first air pipe, and the cleaning component is used to clean the inner side of the first air pipe.

[0008] Furthermore, the cleaning assembly includes a cleaning knife, which is rotatably connected to the first air pipe, and the first air pipe is slidably connected to a second sliding rod, and the second sliding rod is provided with inclined sliding grooves distributed in a ring array, and the inner side of the cleaning knife is fixedly connected to fixing pins distributed in a ring array, and the fixing pins on the inner side of the cleaning knife are slidably matched with the adjacent inclined sliding grooves on the second sliding rod, and the second sliding rod is fixedly connected to a connecting rod on the side away from the first air pipe, and the lower side of the connecting rod is fixedly connected to the piston rod.

[0009] Furthermore, the device also includes a first guide member, which is fixed in the fixed cover, the lower side of the first guide member is in contact and cooperation with the upper side of the slide, the upper side of the first guide member is provided with a truncated cone-shaped groove for collecting the plasma ejected from the plasma manufacturing module, the axis of the truncated cone-shaped groove on the upper side of the first guide member coincides with the axis of the silicon wafer, and the inner side of the first guide member is provided with an exhaust gas treatment component for focusing on the treatment of etching exhaust gas.

[0010] Furthermore, the exhaust gas treatment component includes an exhaust gas collecting shell, which is fixed to the inner side of the first guide member, and one side of the exhaust gas collecting shell is fixed to and connected with a second air pipe, which passes through the first guide member and the fixed cover and is connected with a side of the vacuum pump close to the fixed cover, the exhaust gas collecting shell is provided with air guide holes distributed in a straight line and in a circular array, the first guide member is provided with air guide holes distributed in a straight line and in a circular array, and the air guide holes on the first guide member are connected with adjacent air guide holes on the exhaust gas collecting shell.

[0011] Furthermore, the first guide member is fixedly connected to a second guide member which is distributed in a circular array along a line array along the edge of its upper cross section, and the second guide member is configured in a barb shape, with the side of the second guide member away from the first guide member facing the axis of the first guide member, and the air guide holes on the first guide member and the adjacent air guide holes on the exhaust gas collecting shell are both located below the adjacent second guide member.

[0012] Furthermore, the distances between the second guide members distributed in a linear array and the first guide members increase successively from the side close to the axis of the first guide member to the side far away from the axis of the first guide member, so as to block the etching exhaust gas in stages.

[0013] Furthermore, the device also includes a sealing assembly, which is arranged on the outer side of the slide, and is used to enhance the sealing between the slide and the fixed cover, and the sealing assembly includes sealing members distributed in a linear array, and the sealing members distributed in the linear array are all fixed to the outer periphery of the slide, and the outer periphery of the slide is slidably connected to an extrusion plate distributed in a linear array, and the extrusion plate is extruded and matched with adjacent sealing members, and the lower side of the outer periphery of the extrusion plate is set to an arc shape, and the slide is slidably connected to sliding members distributed in an annular array, and the sliding members distributed in the annular array are all fixed to the extrusion plate distributed in the linear array, a spring is arranged between the sliding member and the slide, and the lower side of the sliding member is extruded and matched with the lower side of the fixed cover, and the diameter of the slide is smaller than the inner diameter of the fixed cover.

[0014] Furthermore, a fixing plate distributed in a linear array is fixedly connected to the lower side of the fixed cover, the fixing plate is corrugated, the inner side of the fixing plate is sealed with the outer side of the adjacent sealing member, and the number of the fixing plates, the sealing members and the extrusion plates are all the same.

[0015] The beneficial effects of the present invention are as follows: the present invention timely shortens the distance between the silicon wafer and the plasma manufacturing module according to the changes of the exhaust gas in the etching chamber, so that the silicon wafer is timely in the temperature area that meets the working requirements, and changes the temperature around the silicon wafer in a passive manner (changing the contact position of the silicon wafer with the temperature that meets the working requirements without changing the temperature stratification method), so as to maintain the stability of the silicon wafer when being etched, thereby realizing the temperature control of the silicon wafer, and realizing uniform temperature control of the silicon wafer through the self-rotation of the silicon wafer, and blocking part of the etching exhaust gas through the shielding provided by the second guide member to the exhaust gas, thereby reducing the amount of etching exhaust gas moving upward, and avoiding a large amount of etching. The waste gas moves upward, causing the speed of the plasma moving downward to be hindered. The etching waste gas is blocked by the second guide and extracted by the waste gas collection shell, so that the etching waste gas around the silicon wafer is extracted in time. Due to the inconsistent heights of adjacent second guides, the etching waste gas is blocked in stages to enhance the extraction efficiency of the etching waste gas. In the process of changing the position relationship of the silicon wafer, the first gas pipe is self-cleaned to restore the gas supply of the first gas pipe. In the process of etching the silicon wafer, active sealing is used to seal the slide and the fixed cover to avoid the possibility of sealing failure of the existing sealing ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a front view of the three-dimensional structure of the present invention;

[0017] Figure 2 It is a rear view of the three-dimensional structure of the present invention;

[0018] Figure 3 It is a left view of the three-dimensional structure of the present invention;

[0019] Figure 4 It is a left-side cross-sectional schematic diagram of the three-dimensional structure of the present invention;

[0020] Figure 5 It is a left bottom view of the three-dimensional structure of the present invention;

[0021] Figure 6 It is a schematic diagram of the three-dimensional structure of the monitoring component of the present invention;

[0022] Figure 7 It is a three-dimensional structural schematic diagram of the cleaning component of the present invention;

[0023] Figure 8 It is a schematic diagram of the three-dimensional structure of the sealing component of the present invention.

[0024] In the accompanying drawings: 101-workbench, 102-operation panel, 103-fixed frame, 104-connecting frame, 105-fixed cover, 106-plasma manufacturing module, 107-vacuum pump, 1071-first gas pipe, 108-electric slider, 1081-slide table, 1082-chamber, 1083-first sliding rod, 1084-silicon wafer, 1085-electric swivel, 2-monitoring component, 201-fixed shell, 202-piston rod, 203-liquid guide tube, 3-cleaning component, 301-cleaning knife, 302-second sliding rod, 303-connecting rod, 4-first guide member, 5-exhaust gas treatment component, 501-exhaust gas collecting shell, 502-second gas pipe, 6-second guide member, 7-sealing component, 701-seal, 702-extrusion plate, 703-sliding member, 8-fixed plate. DETAILED DESCRIPTION

[0025] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] Example 1: A uniform temperature controlled dry etching machine, please refer to Figure 1-Figure 5, including a workbench 101, an operation panel 102 is arranged on the upper side of the workbench 101, two fixed frames 103 distributed in left and right mirror images are fixedly connected to the upper side of the workbench 101, a connecting frame 104 is fixedly connected to the upper side of the two fixed frames 103 distributed in left and right mirror images, a fixed cover 105 is fixedly connected to the inner side of the connecting frame 104, a plasma manufacturing module 106 is arranged on the inner side of the fixed cover 105, the plasma manufacturing module 106 is used to manufacture plasma for etching a silicon wafer 1084, and a vacuum pump 107 is fixedly connected and communicated with the rear side of the fixed cover 105, The vacuum pump 107 is electrically connected to the operation panel 102. The rear side of the vacuum pump 107 is fixedly connected and communicated with a first air delivery pipe 1071. The opposite sides of the two fixed frames 103 distributed in left and right mirror images are both limitedly slidably connected with electric sliders 108. The vacuum pump 107 is electrically connected to the operation panel 102. The electric sliders 108 move up and down along the adjacent fixed frames 103. The opposite sides of the two electric sliders 108 distributed in left and right mirror images are commonly fixedly connected with a slide table 1081. The slide table 1081 is cylindrical. A chamber 1082 is provided on one side of the slide table 1081 near its axis. The upper side of the slide 1081 is sealed, slidably and rotatably connected to the first slide rod 1083, the lower part of the first slide rod 1083 is located in the chamber 1082, the upper side of the first slide rod 1083 is fixedly connected to an electrostatic adsorption disk, the electrostatic adsorption disk is electrically connected to the operation panel 102, and the electrostatic adsorption disk on the upper side of the first slide rod 1083 is used to adsorb the silicon wafer 1084. When the slide 1081 and the fixed cover 105 are working, an etching chamber is formed between the two. When the first gas pipe 1071 is affected by the crystals generated by the exhaust gas and the gas output is affected, the etching exhaust gas generated in the etching chamber (Etching waste gas is waste gas generated by plasma impacting the upper side of silicon wafer 1084) accumulates, and the pressure in the etching chamber gradually increases, which will cause the temperature on the upper side of the etching chamber to be higher than the temperature on the lower side thereof. The temperature near the plasma manufacturing module 106 is higher than the temperature on the lower side of the etching chamber, and the silicon wafer 1084 is located in a low-temperature state area. This will cause the etching time of the silicon wafer 1084 to be extended. At this time, the silicon wafer 1084 is driven to move upward by the first sliding rod 1083, so that the silicon wafer 1084 moves to an area that meets the required working temperature, thereby solving the above-mentioned problem.

[0027] Please refer to Figure 5 and Figure 8An electric rotating ring 1085 is sealed and slidably connected inside the slide 1081. The electric rotating ring 1085 consists of a rotating ring and electric wheels distributed in a ring array. The electric rotating ring 1085 is located in the chamber 1082 and is electrically connected to the operation panel 102. The upper side of the electric rotating ring 1085 is fixedly connected to the lower side of the first sliding rod 1083. The electric rotating ring 1085 is used to drive the first sliding rod 1083 to rotate. When the electric rotating ring 1085 drives the first sliding rod 1083 to rotate, the silicon wafer 1084 is brought into contact with the plasma. A monitoring component 2 for monitoring the pressure inside the fixed cover 105 is provided on the rear side of the fixed cover 105.

[0028] Please refer to Figure 2 , Figure 3 , Figure 5 and Figure 6 The monitoring component 2 includes a fixed shell 201 fixedly connected to the outer rear side of the fixed cover 105, the fixed shell 201 is located below the vacuum pump 107, the fixed shell 201 is connected to the fixed cover 105, a piston rod 202 is sealed and slidably connected inside the fixed shell 201, a spring is arranged between the piston rod 202 and the fixed shell 201, this spring can not only be used to provide support for the piston rod 202, but also can be used to drive the piston rod 202 to reset, hydraulic oil is stored in the fixed shell 201 and the chamber 1082, the rear side of the fixed shell 201 is fixedly connected and connected with a liquid guide tube 203, the lower side of the liquid guide tube 203 passes through the slide 1081 and is connected to the chamber 1082, and a cleaning component 3 for cleaning the inner side of the first air supply pipe 1071 is arranged on the inner side.

[0029] Please refer to Figure 6 and Figure 7 The cleaning component 3 includes a cleaning knife 301 which is connected to the inner side of the first air pipe 1071 for limited rotation. The rear side of the first air pipe 1071 is sealed and slidably connected with a second sliding rod 302. The outer side of the second sliding rod 302 is provided with an inclined sliding groove distributed in a ring array. The inner side of the cleaning knife 301 is fixedly connected with a fixing pin distributed in a ring array. The inclined sliding groove on the outer side of the second sliding rod 302 is limitedly slidably matched with the adjacent fixing pin on the inner side of the cleaning knife 301. The rear side of the second sliding rod 302 is fixedly connected with a connecting rod 303. The connecting rod 303 is located at the rear of the first air pipe 1071. The lower side of the connecting rod 303 is fixedly connected to the rear side of the piston rod 202. Through the cooperation of the inclined sliding groove on the outer side of the second sliding rod 302 and the adjacent fixing pin on the inner side of the cleaning knife 301, the cleaning knife 301 is rotated and the crystals on the inner wall of the first air pipe 1071 are scraped off.

[0030] In order to facilitate those skilled in the art to understand the present device, the present invention describes in detail the etching process of the silicon wafer 1084 through the following description. Since the silicon wafer 1084 will produce waste gas during the etching process (the etching gas will react with the surface of the silicon wafer 1084 to produce gaseous reactants, solid particles, hot air, etc.), it is necessary to use a vacuum pump 107 to extract the waste gas, and the waste gas can be extracted while maintaining the air pressure in the etching chamber stable. After the waste gas is pumped to the outside by the vacuum pump 107, since the vacuum pump 107 suction port is close to the etching chamber and the air outlet is far away from the etching chamber, a temperature difference will be generated between the vacuum pump 107 suction port and the air outlet, and the waste gas will crystallize in a low temperature environment, thereby forming crystals and adhering to the vacuum pump 107. The gas outlet of the vacuum pump 107 is blocked by the crystal, which will reduce the amount of waste gas extracted by the vacuum pump 107. After the amount of waste gas extracted by the vacuum pump 107 is reduced, the waste gas in the etching chamber cannot be normally extracted. As the plasma etches the silicon wafer 1084, the waste gas generated between the two will accumulate more and more, thereby causing the pressure in the etching chamber to gradually increase. After the pressure in the etching chamber increases, the speed at which the plasma manufacturing module 106 ejects plasma will be reduced, thereby causing temperature stratification in the etching chamber (the temperature near the plasma manufacturing module 106 is greater than the temperature on the lower side of the etching chamber, and the silicon wafer 1084 is located in a low temperature state area), which will prolong the etching time of the silicon wafer 1084. The above-mentioned problems are now solved through the following implementation methods:

[0031] When it is necessary to etch the silicon wafer 1084, the user places the silicon wafer 1084 on the electrostatic adsorption disk on the upper side of the first sliding rod 1083, and then the user controls the electrostatic adsorption disk on the upper side of the first sliding rod 1083 through the operation panel 102 to electrostatically adsorb the silicon wafer 1084 to fix the silicon wafer 1084. Then the user controls the two electric sliders 108 through the operation panel 102 to drive the slide 1081 and the parts thereon to move upward. When the upper side of the slide 1081 moves to fit with the lower side of the first guide member 4, the two electric sliders 108 no longer drive the slide 1081 and the parts thereon to move upward. After the upper side of the slide 1081 is located in the fixed cover 105, an etching cavity is formed between the fixed cover 105 and the slide 1081. Then the user seals the fixed cover 105 and the slide 1081. At this time, the preparations for etching the silicon wafer 1084 have been completed.

[0032] When etching the silicon wafer 1084, the user starts the vacuum pump 107 through the operation panel 102, and the vacuum pump 107 pumps the etching chamber into a low-pressure environment (process requirements, and the low-pressure environment can not only improve the etching accuracy and uniformity, but also effectively improve the high quality and high reliability of the etched object), and then the user starts the plasma manufacturing module 106 and the electric rotating ring 1085 through the operation panel 102, and the electric rotating ring 1085 drives the first sliding rod 1083 and the silicon wafer 1084 to rotate along the slide 1081, and the plasma manufacturing module 106 sprays plasma into the etching chamber (the plasma manufacturing process is: The plasma manufacturing module 106 absorbs the etching gas and processes the etching gas into plasma. When the plasma manufacturing module 106 sprays the plasma into the etching chamber, it will not be directly pumped out by the vacuum pump 107. This is because the etching gas is ionized by the plasma manufacturing module 106 to generate plasma after being injected into the etching chamber. The active ions in the plasma react chemically with the silicon wafer 1084 to generate etching waste gas, which will be directly pumped out by the vacuum pump 107. The plasma moves downward along the fixed cover 105 and etches the upper side of the silicon wafer 1084 to achieve basic etching.

[0033] During the etching process of the silicon wafer 1084 , the upper side of the silicon wafer 1084 is evenly contacted with the plasma (the plasma itself has temperature) through the rotation of the electric rotating ring 1085 , the first sliding rod 1083 and the silicon wafer 1084 , and the temperature of the upper side of the silicon wafer 1084 is controlled to achieve uniform temperature control of the silicon wafer 1084 .

[0034] The etching waste gas extracted by the vacuum pump 107 is then discharged from the first gas pipe 1071. Since the first gas pipe 1071 and the vacuum pump 107 are at different positions from the fixed cover 105, the temperature of the etching waste gas will gradually decrease when the etching waste gas is discharged from the first gas pipe 1071. The etching waste gas in a low temperature state will condense on the inner wall of the first gas pipe 1071 to form crystals. As the number of crystals increases, the ventilation volume of the first gas pipe 1071 will be reduced, and the ventilation of the first gas pipe 1071 will be reduced. When the amount is reduced, it means that the vacuum pump 107 cannot completely extract the etching waste gas inside the fixed cover 105, and part of the etching waste gas will gather in the fixed cover 105, so that the environment in the etching chamber gradually changes from low pressure to positive pressure or even high pressure. When the pressure in the etching chamber increases, the speed at which the plasma manufacturing module 106 ejects plasma will be reduced. [As the pressure in the etching chamber increases, the number of molecules per unit volume increases, resulting in the charged particles (ions and electrons) in the plasma and other particles (including neutral particles and other charged particles) The probability of collision between them increases, and these collisions will have a damping effect on the diffusion and flow of plasma, which is similar to increasing viscous resistance, causing the plasma to encounter greater resistance when propagating outward], thereby causing temperature stratification in the etching chamber (due to the slow movement speed of the plasma ejected from the plasma manufacturing module 106, the temperature on the lower side of the plasma manufacturing module 106 will be greater than the temperature in the middle of the fixed cover 105), and the etching efficiency of the silicon wafer 1084 will be reduced. When the contact speed between the plasma and the silicon wafer 1084 is lower than the speed of the low-pressure environment in the etching chamber, the silicon wafer 1084 cannot be normally etched by the plasma at this temperature (when the etching chamber is in a low-pressure state, the temperature of the plasma itself is sufficient to meet the temperature for etching the silicon wafer 1084. After the pressure in the etching chamber gradually increases, the plasma will be affected by the increase in pressure and reduce the downward flow speed. After the downward flow speed of the plasma is extended, the temperature in contact with the silicon wafer 1084 will be lower than the temperature during normal etching, which will cause the silicon wafer 1084 to be unable to be etched normally).

[0035] When the environment in the etching chamber gradually changes to high pressure and is greater than the supporting force provided by the springs adjacent to the piston rod 202, the piston rod 202 slides backward (the adjacent springs are squeezed during the movement of the piston rod 202). During the sliding of the piston rod 202, the hydraulic oil in the fixed shell 201 is pushed into the chamber 1082 through the liquid guide tube 203, thereby pushing the electric swivel 1085 upward. During the upward movement of the electric swivel 1085, the first sliding rod 1083 and the silicon wafer 1084 are driven to move upward, shortening the distance between the silicon wafer 1084 and the plasma manufacturing module 106, so that the silicon wafer 1084 moves to a temperature suitable for the work, so as to realize the temperature control of the silicon wafer 1084, and realize uniform temperature control of the silicon wafer 1084 through the self-rotation of the silicon wafer 1084.

[0036] During the backward sliding of the piston rod 202, the second sliding rod 302 is driven to move synchronously through the connecting rod 303. During the movement of the second sliding rod 302, the fixing pins distributed in a circular array on the cleaning knife 301 cooperate with the inclined sliding grooves distributed in a circular array on the second sliding rod 302 to rotate the cleaning knife 301 and the fixing pins distributed in a circular array thereon. During the rotation of the cleaning knife 301, the inner wall of the first air pipe 1071 is scraped to remove the crystals on the inner wall of the first air pipe 1071. After the first air pipe 1071 loses the obstruction of the crystals, the ventilation volume therein gradually recovers. After the ventilation volume of the first air pipe 1071 is restored, the vacuum pump 107 draws out the etching gas in the etching chamber, so that a low-pressure environment is gradually formed in the etching chamber.

[0037] During the process of forming a low-pressure environment in the etching chamber, the piston rod 202 drives the connecting rod 303 and the second sliding rod 302 to reset and move under the action of the elastic force provided by the adjacent spring. During the reset and movement of the piston rod 202, the hydraulic oil in the chamber 1082 flows back into the fixed shell 201 through the liquid guide tube 203. As the hydraulic oil in the chamber 1082 decreases, the electric swivel 1085 drives the first sliding rod 1083 and the silicon wafer 1084 to reset and move downward. When the silicon wafer 1084 moves to the Figure 5 The state after the silicon wafer 1084 is in the basic state. The distance between the silicon wafer 1084 and the plasma manufacturing module 106 is restored by the resetting movement of the silicon wafer 1084 and the first sliding rod 1083, so as to avoid the silicon wafer 1084 being over-etched after the distance between the silicon wafer 1084 and the plasma manufacturing module 106 is shortened, thereby avoiding that the integrity of the structure on the silicon wafer 1084 is damaged.

[0038] During the process of the connecting rod 303 and the second sliding rod 302 performing the resetting movement, the cleaning knife 301 is caused to rotate in the opposite direction through the cooperation between the second sliding rod 302 and the cleaning knife 301 .

[0039] After the etching of the silicon wafer 1084 is completed, the user turns off the vacuum pump 107, the plasma manufacturing module 106 and the electric swivel 1085 through the operation panel 102, and then the user controls the two electric sliders 108 through the operation panel 102 to drive the slide 1081 and the parts thereon to slide downward until the slide 1081 returns to the Figure 2 After reaching the basic state, the user controls the electrostatic adsorption disk on the upper side of the first sliding rod 1083 to detach from the adsorption of the silicon wafer 1084, and finally the user removes the silicon wafer 1084, and repeats the above description for the subsequent etching steps of the silicon wafer 1084.

[0040] Example 2: Based on Example 1, please refer to Figure 4 , Figure 5 and Figure 8The device also includes a first guide member 4 fixedly connected to the fixed cover 105, the lower side of the first guide member 4 is in contact with the upper side of the slide 1081, and the upper side of the first guide member 4 is provided with a truncated cone groove for collecting the plasma ejected from the plasma manufacturing module 106. The axis of the truncated cone groove on the upper side of the first guide member 4 coincides with the axis of the silicon wafer 1084. The plasma is guided by the upper side of the first guide member 4, so that after the plasma contacts the truncated cone groove on the upper side of the first guide member 4, it is collected toward the axis of the first guide member 4, and the plasma is concentrated at the axis of the first guide member 4, so as to enhance the etching effect on the silicon wafer 1084. The inner side of the first guide member 4 is provided with an exhaust gas treatment component 5 for focusing on the treatment of etching exhaust gas.

[0041] Please refer to Figure 4 , Figure 5 and Figure 8 The exhaust gas treatment component 5 includes an exhaust gas collection shell 501 fixedly connected to the inner side of the first guide member 4, and the rear side of the exhaust gas collection shell 501 is fixedly connected and connected with a second air delivery pipe 502, and the second air delivery pipe 502 passes through the first guide member 4 and the fixed cover 105 and is connected with the front side of the vacuum pump 107. The exhaust gas collection shell 501 is provided with air guide holes distributed in a straight line and in an annular array. The first guide member 4 is provided with air guide holes distributed in a straight line and in an annular array. The air guide holes on the first guide member 4 are connected with the adjacent air guide holes on the exhaust gas collection shell 501. When the vacuum pump 107 extracts the gas in the fixed cover 105, part of the gas can be extracted by the vacuum pump 107 through the exhaust gas collection shell 501 and the second air delivery pipe 502. The first guide member 4 is fixedly connected with a plurality of air guide holes along its upper cross section. The second guide members 6 are arranged in an edge line array and in a circular array, and are used to block the etching exhaust gas. The second guide members 6 are arranged in a hook shape, and the upper side of the second guide member 6 faces the axis of the first guide member 4, and is used to focus on blocking the etching exhaust gas close to the axis of the first guide member 4. The air guide holes on the first guide member 4 and the adjacent air guide holes on the exhaust gas collecting shell 501 are both located below the adjacent second guide members 6, and are used to timely extract the etching exhaust gas blocked by the adjacent second guide members 6. The distances between the second guide members 6 distributed in a linear array and the first guide member 4 increase successively from the side close to the axis of the first guide member 4 to the side away from the axis of the first guide member 4, and are used to perform graded blocking of the etching exhaust gas, thereby enhancing the extraction efficiency of the etching exhaust gas.

[0042] In the process of etching the silicon wafer 1084, the plasma is guided by the upper side of the first guide 4, so that after the plasma contacts the truncated cone groove on the upper side of the first guide 4, it converges to the axis of the first guide 4, and the plasma is concentrated at the axis of the first guide 4, so as to enhance the etching effect on the silicon wafer 1084. After the plasma etches the upper side of the silicon wafer 1084, the etching waste gas moves upward, and under the shielding effect provided by the adjacent second guide 6, part of the etching waste gas is blocked to reduce the amount of the etching waste gas moving upward, so as to avoid a large amount of etching waste gas moving upward, resulting in the speed of the plasma moving downward being hindered. Under the effect of the waste gas collection shell 501 being connected to the vacuum pump 107 through the second gas pipe 502, the vacuum pump 1 07 In the process of extracting the gas in the fixed cover 105 [the existing vacuum pump was originally designed to extract the gas molecules in the container, and the plasma is a collection of ions, electrons and neutral particles (including non-ionized atoms or molecules). They are not gas molecules in the traditional sense, but particles with a charge. Therefore, the existing vacuum pump cannot extract the plasma], the etching exhaust gas can be extracted by the vacuum pump 107 through the exhaust gas collection shell 501 and the second gas pipe 502. The etching exhaust gas is shielded by the second guide 6 and the extraction of the exhaust gas collection shell 501 is coordinated to timely extract the etching exhaust gas around the silicon wafer 1084. Under the effect of the inconsistent heights of adjacent second guide members 6, the etching exhaust gas is blocked in stages to enhance the extraction efficiency of the etching exhaust gas.

[0043] Example 3: Based on Example 2, please refer to Figure 3 and Figure 8The device also includes a sealing component 7 arranged on the outside of the slide 1081. The sealing component 7 is used to enhance the sealing between the slide 1081 and the fixed cover 105. The sealing component 7 includes sealing members 701 distributed in a linear array. The sealing members 701 are made of soft silicone material. The sealing members 701 distributed in a linear array are all fixed to the outer periphery of the slide 1081. The outer periphery of the slide 1081 is slidably connected with a squeeze plate 702 distributed in a linear array. The squeeze plate 702 is squeezed and matched with adjacent seals 701. The lower side of the outer periphery of the squeeze plate 702 is set to an arc shape. When the squeeze plate 702 squeezes the adjacent seal 701, the seal 701 expands outward. Under the action of the arc shape on the lower side of the outer periphery of the squeeze plate 702, the degree of outward diffusion of the seal 701 is enhanced. The slide 1081 is slidably connected with sliding members 703 distributed in an annular array. The sliding members 703 distributed in an annular array are all connected to the linear array. The extrusion plate 702 is fixedly connected, and a spring is arranged between the sliding member 703 and the slide table 1081. This spring can be used to support the sliding member 703, and can also be used to drive the sliding member 703 to reset. The lower side of the sliding member 703 is squeezed and matched with the lower side of the fixed cover 105. The diameter of the slide table 1081 is smaller than the inner diameter of the fixed cover 105. When the slide table 1081 slides upward, the slide table 1081 will not have hard friction with the inner side of the fixed cover 105. The lower side of the fixed cover 105 is fixedly connected with a fixed plate 8 distributed in a linear array. The fixed plate 8 is corrugated. The inner side of the fixed plate 8 is sealed with the outer side of the adjacent sealing member 701. The number of the fixed plate 8, the sealing member 701 and the extrusion plate 702 are all the same. Under the effect of the corrugation of the fixed plate 8, the contact area between the fixed plate 8 and the adjacent sliding member 703 is enhanced, thereby enhancing the sealing between the slide table 1081 and the fixed cover 105.

[0044] In the prior art, a sealing ring is used to seal between the slide 1081 and the fixed cover 105. The installation position of the sealing ring is located at the outer periphery of the slide 1081. When the slide 1081 needs to be manipulated to slide into the fixed cover 105, the slide 1081 drives the sealing ring to move upward so that the outer side of the sealing ring fits with the inner side of the fixed cover 105. However, as the number of movements of the slide 1081 increases, the sealing ring will be worn during the continuous squeezing process, and even the sealing between the slide 1081 and the fixed cover 105 will be reduced. After the sealing between the slide 1081 and the fixed cover 105 is reduced, the external gas will enter the etching chamber through the sealing position between the slide 1081 and the fixed cover 105, which will interfere with the pressure balance in the etching chamber, thereby affecting the etching process of the silicon wafer 1084. The present invention adopts an active sealing method to seal between the slide 1081 and the fixed cover 105 to solve the above-mentioned problems. The specific implementation method is as follows:

[0045] After the silicon wafer 1084 is fixed, the user controls the two electric sliders 108 through the operation panel 102 to drive the slide 1081 and the parts thereon to slide upward until the upper side of the slide 1081 is located in the fixed cover 105. During the process of the slide 1081 sliding upward along the lower side of the fixed cover 105, since there is a gap between the slide 1081 and the fixed cover 105, there will be no hard friction between the slide 1081 and the fixed cover 105 during the upward movement of the slide 1081. During the upward movement of the slide 1081, all the sliding members 703 thereon are driven to move upward. When the sliding member 703 moves upward until its lower side is in contact with the lower side of the fixed cover 105, the slide 1081 continues to move upward. Under the action of the lower side of the fixed cover 105 blocking the sliding member 703, the sliding member 703 drives all the extrusion plates 702 to respectively extrude the adjacent sliding members 703 (the adjacent springs are extruded during the movement of the sliding member 703).

[0046] Taking the extrusion process of one of the extrusion plates 702 as an example, when the extrusion plate 702 squeezes the adjacent seal 701, the seal 701 diffuses outward. Under the action of the arc-shaped lower side of the outer periphery of the extrusion plate 702, the seal 701 is guided to enhance the degree of outward diffusion of the seal 701. During the outward diffusion of the seal 701, it gradually fits with the adjacent fixed plate 8. When the slide 1081 moves upward to the upper side thereof and fits with the lower side of the first guide member 4, the slide 1081 no longer moves upward, and the sliding member 703 has been squeezed to fit with the adjacent fixed plate 8. Under the action of the corrugated shape of the fixed plate 8, the contact area between the fixed plate 8 and the adjacent sliding member 703 is enhanced, thereby enhancing the sealing between the slide 1081 and the fixed cover 105, and solving the above-mentioned problem in a manner of active sealing.

[0047] After the etching of the silicon wafer 1084 is completed, the slide 1081 slides downward. When the slide 1081 drives all the sliding members 703 to slide downward, the sliding members 703 gradually break away from the contact with the lower side of the fixed cover 105. All the sliding members 703 drive all the extrusion plates 702 to reset in the opposite direction under the action of the adjacent springs, thereby breaking away from the extrusion of all the sealing members 701. The sealing members 701 are reset after breaking away from the contact with the extrusion plates 702, so that the sealing members 701 are no longer in contact with the adjacent fixed plates 8, so as to release the sealing relationship between the slide 1081 and the fixed cover 105. The slide 1081 continues to move to Figure 2 After the silicon wafer 1084 is in the state, the user repeats the above-mentioned actions and takes out the silicon wafer 1084.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A uniform temperature controlled dry etching machine, comprising a workbench (101), the workbench (101) being provided with an operation panel (102), a mirror-distributed fixed frame (103) being fixedly connected to the upper side of the workbench (101), a connecting frame (104) being fixedly connected to the upper side of the mirror-distributed fixed frame (103), a fixed cover (105) being fixedly connected to the connecting frame (104), a plasma manufacturing module (106) being provided inside the fixed cover (105), and the fixed cover (105) being fixedly connected and A vacuum pump (107) electrically connected to the operation panel (102) is connected thereto; a first air delivery pipe (1071) is fixedly connected to and connected to a side of the vacuum pump (107) away from the fixed cover (105); the mirror-distributed fixed frames (103) are all slidably connected to electric sliders (108) electrically connected to the operation panel (102); a slide table (1081) is fixedly connected between the mirror-distributed electric sliders (108); a chamber (1082) is provided on the inner side of the slide table (1081); and the invention is characterized in that: It also includes a first sliding rod (1083), the first sliding rod (1083) is slidably and rotatably connected to the upper side of the slide table (1081), the lower part of the first sliding rod (1083) is located in the chamber (1082), and the first sliding rod (1083) is used to provide support for the silicon wafer (1084); The device further comprises a first guide member (4), the first guide member (4) being fixedly connected to the fixed cover (105), the lower side of the first guide member (4) being in contact with the upper side of the slide table (1081), the upper side of the first guide member (4) being provided with a truncated cone-shaped groove for collecting plasma ejected from the plasma manufacturing module (106), the axis of the truncated cone-shaped groove on the upper side of the first guide member (4) being coincident with the axis of the silicon wafer (1084), and the inner side of the first guide member (4) being provided with an exhaust gas treatment component (5) for focusing on the treatment of etching exhaust gas; The first guide member (4) is fixedly connected to a second guide member (6) which is arranged in a circular array along an edge line array of an upper cross section thereof, the second guide member (6) being arranged in a barb shape, the side of the second guide member (6) away from the first guide member (4) being oriented toward the axis of the first guide member (4), the air guide hole on the first guide member (4) and the adjacent air guide hole on the exhaust gas collecting shell (501) being both located below the adjacent second guide member (6).

2. A uniform temperature controlled dry etching machine according to claim 1, characterized in that: The slide table (1081) is slidably connected to an electric rotating ring (1085) located in the chamber (1082); the electric rotating ring (1085) is electrically connected to the operation panel (102); the electric rotating ring (1085) is fixedly connected to the first sliding rod (1083); the electric rotating ring (1085) is used to drive the first sliding rod (1083) to rotate; a monitoring component (2) is provided on a side of the fixed cover (105) close to the vacuum pump (107); the monitoring component (2) is used to monitor the pressure in the fixed cover (105).

3. A uniform temperature controlled dry etching machine according to claim 2, characterized in that: The monitoring component (2) comprises a fixed shell (201), the fixed shell (201) being fixedly connected to the outside of the fixed cover (105) and to a side close to the vacuum pump (107), the fixed shell (201) being located below the vacuum pump (107), the fixed shell (201) being communicated with the fixed cover (105), a piston rod (202) being slidably connected inside the fixed shell (201), and a spring being provided between the piston rod (202) and the fixed shell (201), Hydraulic oil is stored in both the fixed shell (201) and the chamber (1082); a side of the fixed shell (201) away from the fixed cover (105) is fixedly connected to and communicated with a liquid guide tube (203); the lower side of the liquid guide tube (203) passes through the slide (1081) and is communicated with the chamber (1082); a cleaning component (3) is provided on the inner side of the first air supply pipe (1071); the cleaning component (3) is used to clean the inner side of the first air supply pipe (1071).

4. The uniform temperature controlled dry etching machine according to claim 3, characterized in that: The cleaning assembly (3) comprises a cleaning knife (301), the cleaning knife (301) is rotatably connected to the first air supply pipe (1071), the first air supply pipe (1071) is slidably connected to a second sliding rod (302), the second sliding rod (302) is provided with inclined sliding grooves distributed in a ring array, the inner side of the cleaning knife (301) is fixedly connected to fixing pins distributed in a ring array, the fixing pins on the inner side of the cleaning knife (301) are slidably matched with adjacent inclined sliding grooves on the second sliding rod (302), the second sliding rod (302) is fixedly connected to a connecting rod (303) on a side away from the first air supply pipe (1071), and the lower side of the connecting rod (303) is fixedly connected to the piston rod (202).

5. The uniform temperature controlled dry etching machine according to claim 3, characterized in that: The exhaust gas treatment component (5) comprises an exhaust gas collection shell (501), the exhaust gas collection shell (501) being fixedly connected to the inner side of the first guide member (4), one side of the exhaust gas collection shell (501) being fixedly connected to and connected with a second air supply pipe (502), the second air supply pipe (502) passing through the first guide member (4) and the fixed cover (105) and being connected with a side of the vacuum pump (107) close to the fixed cover (105), the exhaust gas collection shell (501) being provided with air guide holes distributed in a straight line and in an annular array, the first guide member (4) being provided with air guide holes distributed in a straight line and in an annular array, the air guide holes on the first guide member (4) being connected with adjacent air guide holes on the exhaust gas collection shell (501).

6. The uniform temperature controlled dry etching machine according to claim 1, characterized in that: The distances between the second guide members (6) distributed in a linear array and the first guide members (4) increase from a side close to the axis of the first guide member (4) to a side far from the axis of the first guide member (4), so as to block etching waste gas in stages.

7. The uniform temperature controlled dry etching machine according to claim 5, characterized in that: The device further comprises a sealing assembly (7), wherein the sealing assembly (7) is arranged on the outer side of the slide (1081), and the sealing assembly (7) is used to enhance the sealing performance between the slide (1081) and the fixed cover (105), and the sealing assembly (7) comprises sealing members (701) distributed in a linear array, wherein the sealing members (701) distributed in a linear array are all fixedly connected to the outer periphery of the slide (1081), and the outer periphery of the slide (1081) is slidably connected to extrusion plates (702) distributed in a linear array, and the extrusion plates (702) are connected to adjacent The sealing member (701) is pressed and fitted, the lower side of the outer periphery of the extrusion plate (702) is set to be arc-shaped, the slide table (1081) is slidably connected with the sliding members (703) distributed in an annular array, the sliding members (703) distributed in an annular array are all fixedly connected to the extrusion plate (702) distributed in a linear array, a spring is arranged between the sliding member (703) and the slide table (1081), the lower side of the sliding member (703) is pressed and fitted with the lower side of the fixed cover (105), and the diameter of the slide table (1081) is smaller than the inner diameter of the fixed cover (105).

8. The uniform temperature controlled dry etching machine according to claim 7, characterized in that: Fixed plates (8) distributed in a linear array are fixedly connected to the lower side of the fixed cover (105); the fixed plates (8) are corrugated; the inner side of the fixed plates (8) is sealed with the outer side of the adjacent sealing member (701); and the number of the fixed plates (8), the sealing member (701) and the extrusion plates (702) are all the same.

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