Multilayer film forming apparatus and method for producing multilayer film semiconductor structure

Abstract

The application belongs to the field of semiconductor manufacturing equipment, and particularly relates to a multilayer film forming device and a preparation method of a multilayer film semiconductor structure. The multilayer film forming device comprises a reaction cavity, a bearing mechanism and a conveying mechanism. An nth film forming area is arranged in the reaction cavity and used for depositing n film layers. A conveying area is arranged between an upper film forming area and a lower film forming area. The bearing mechanism is used for bearing and fixing a wafer. The bearing mechanism is mounted on the conveying mechanism, and the conveying mechanism is used for conveying the bearing mechanism to realize the movement of the wafer in the reaction cavity. The wafer sequentially passes through the treatment of the first film forming area, the treatment of the second film forming area,..., and the treatment of the nth film forming area through the conveying mechanism, so as to realize the deposition of n film layers. The reaction cavity of the multilayer film forming device can deposit different film layers, and the wafer does not need to repeatedly enter and exit different reaction cavities, so that the working efficiency of the film forming device is improved, and the risk of pollution of the wafer in the conveying process is reduced.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of thin film deposition, and particularly relates to a multilayer film deposition device and a preparation method of a multilayer film semiconductor structure based on spatially isolated atomic layer deposition technology. BACKGROUND

[0002] In the field of semiconductor chip manufacturing, as the thickness of the gate oxide dielectric layer decreases, the dielectric layer originally deposited by the same material no longer meets the requirements, and a multilayer composite film has become the main way to solve this problem. However, the current thin film deposition equipment, including furnace tubes and spatially isolated atomic layer deposition equipment, are all designed based on the starting point of "deposition of a single layer of film". When using these devices to deposit a multilayer film, it is necessary to change the reaction gas or sequentially enter the equipment corresponding to the multilayer film for thin film deposition. Therefore, when using the film deposition equipment designed based on a single layer of film to deposit a multilayer composite film, there are problems such as poor efficiency, material utilization rate, and film quality.

[0003] Therefore, it is necessary to study a film deposition device designed based on the starting point of "deposition of a multilayer film" to solve or improve the above problems. SUMMARY

[0004] The purpose of the present application is to provide a multilayer film deposition device and a preparation method of a multilayer film semiconductor structure, which can improve the deposition efficiency of a multilayer film by continuously forming multiple different film layers.

[0005] In order to achieve the above-mentioned purpose, the present application provides a multilayer film deposition device based on spatially isolated atomic layer deposition, comprising:

[0006] a reaction chamber, in which a first film deposition area for depositing a first film layer, a second film deposition area for depositing a second film layer,..., and an nth film deposition area for depositing an nth film layer are arranged, wherein n is greater than or equal to 2; each film deposition area is provided with a corresponding number of gas treatment areas according to the film layer to be deposited by atomic layer deposition, and a gas isolation area is arranged between the last gas treatment area and the next gas treatment area, and the wafer passes through the gas isolation area from the last gas treatment area to the next gas treatment area;

[0007] a transfer area is arranged between the last film deposition area and the next film deposition area, and the transfer area is an isolated gas atmosphere, and the wafer passes through the transfer area from the last film deposition area to the next film deposition area;

[0008] a carrying mechanism for carrying and fixing the wafer;

[0009] a transfer mechanism, the carrying mechanism is installed on the transfer mechanism, and the transfer mechanism is used to transfer the carrying mechanism to realize the movement of the wafer in the reaction chamber.

[0010] The wafer sequentially passes through the processing of the first film forming area, the processing of the second film forming area, …, the processing of the nth film forming area by the conveying mechanism, so as to realize the deposition of n layers of film.

[0011] Optionally, the conveying mechanism comprises a continuous conveying track and a conveying driving mechanism, and the conveying track is arranged in the reaction cavity.

[0012] The bearing mechanism is movably connected with the conveying track, and the bearing mechanism is connected with the conveying driving mechanism, so that the bearing mechanism moves on the conveying track under the driving of the conveying driving mechanism, so as to realize that the wafer sequentially passes through corresponding gas processing areas in each film forming area and sequentially passes through the first film forming area, the second film forming area, …, and the nth film forming area.

[0013] Optionally, the conveying track comprises n first tracks arranged one by one in the film forming area and n second tracks arranged in the conveying area; the first track comprises an input end and an output end, and the second track connects the input end and the output end of different first tracks, so that the conveying track forms a continuous track, and any two second tracks are parallel or stereoscopic intersected.

[0014] Optionally, n=2, the first second track connects the output end of the first first track and the input end of the second first track, the second second track connects the output end of the second first track and the input end of the first first track, and the first second track and the second second track are stereoscopic intersected; or

[0015] n=3, the first second track connects the output end of the first first track and the input end of the second first track, the second second track connects the output end of the second first track and the input end of the third first track, the third second track connects the output end of the third first track and the input end of the first first track, the first second track and the second second track are parallel, the first second track and the third second track are stereoscopic intersected, and the second second track and the third second track are stereoscopic intersected; or

[0016] n=4, the first second track connects the output end of the first first track and the input end of the second first track, the second second track connects the output end of the second first track and the input end of the third first track, the third second track connects the output end of the third first track and the input end of the fourth first track, the fourth second track connects the output end of the fourth first track and the input end of the first first track, the second second track and the fourth second track are parallel, the first second track is three-dimensionally crossed with the second second track, the third second track and the fourth second track respectively, and the second second track is three-dimensionally crossed with the third second track.

[0017] Optionally, the first track comprises two first rail segments arranged at intervals, and the second track comprises two second rail segments arranged at intervals, the first rail segments and the second rail segments are smoothly connected to form two rails arranged at equal intervals.

[0018] Optionally, the first rail segments comprise circular arc rail segments, the two first rail segments in the first track are concentrically arranged, the center lines of all the first rail segments are located on the same track surface, the track surface has opposite first and second sides, part of the second rail segments are bent towards the first side of the track surface, and part of the second rail segments are bent towards the second side of the track surface; or

[0019] The first rail segments comprise spiral rail segments, the two first rail segments in the first track are arranged at equal intervals, the second track comprises straight rail segments, and the two second rail segments in the second track are arranged in parallel.

[0020] Optionally, the conveying driving mechanism comprises a chain, a plurality of chain wheels and at least one conveying driver, the chain is sleeved on the plurality of chain wheels, the shape of the chain matches the shape of the conveying track, the conveying driver is connected with the chain wheels, the conveying driver comprises a motor, the bearing mechanism is directly or indirectly connected with the chain, the conveying driver drives the rotation of the chain wheels, and the chain wheels drive the bearing mechanism to move along the conveying track through the chain.

[0021] Optionally, the bearing mechanism comprises a base, a rotating disc, a rotating shaft and a walking mechanism.

[0022] The rotating disc is located above the base, a wafer groove is arranged on the front surface of the rotating disc for placing a wafer, and a through hole is arranged in the center of the base to realize the fixed connection of one end of the rotating shaft penetrating through the base and the back surface of the rotating disc.

[0023] The base is connected with the conveying track through the walking mechanism, and the rotating shaft is further connected with the conveying driving mechanism at the end away from the rotating disc, so that the conveying driving mechanism drives the carrying mechanism to move along the conveying track.

[0024] Optionally, a rotating driving mechanism is further included, which is connected with the rotating shaft at the end away from the rotating disc or is arranged in at least part of the conveying region, and is used to drive the rotating disc and the wafer carried by the rotating disc to rotate by an angle greater than or equal to 0 during the process that the carrying mechanism passes through the conveying region from the previous film forming region to the next film forming region.

[0025] Optionally, the rotating driving mechanism is connected with the rotating shaft at the end away from the rotating disc, and the rotating driving mechanism includes a first gear, a second gear and at least one rotating driver, the first gear is sleeved on the rotating shaft, the second gear is engaged with the first gear, and the rotating driver is connected with the second gear, the rotating driver includes a motor, and the rotating driver drives the second gear to rotate to drive the rotating shaft to rotate.

[0026] The rotating driving mechanism is arranged in at least part of the conveying region, and the rotating driving mechanism includes a first gear and a rack, the first gear is sleeved on the rotating shaft, and the rack is arranged in at least part of the conveying region, the rack is engaged with the first gear to drive the first gear to rotate during the process that the carrying mechanism passes through the conveying region.

[0027] Optionally, the conveying track is a double-rail track, and the rail spacing is the same at all positions; the walking mechanism includes two sliders, the two sliders are slidably connected with the two rails of the conveying track in one-to-one correspondence, the two sliders are symmetrically fixed on the back of the base with the axis of the rotating shaft as the symmetric axis, and the conveying mechanism drives the sliders to slide along the rails to realize the movement of the wafer in the reaction cavity.

[0028] Optionally, the conveying track is a double-rail track, and the rail spacing is the same at all positions; the walking mechanism includes two walking wheel sets and an axle assembly, the two walking wheel sets are connected with the base through the axle assembly, the two walking wheel sets are symmetrically arranged with the axis of the rotating shaft as the symmetric axis, the walking wheel sets are connected with the two rails of the conveying track in one-to-one correspondence, and the walking wheel set includes at least one walking wheel, and the walking wheel is rotatably arranged on the rail.

[0029] Optionally, an air inlet assembly and an air outlet assembly of corresponding gas are arranged in each of the gas treatment region, each of the gas isolation region and each of the conveying region, respectively.

[0030] The application also provides a preparation method of a multilayer film semiconductor structure, which is prepared by using the multilayer film forming device and comprises the following steps:

[0031] A wafer to be processed is prepared and put into the multilayer film forming device;

[0032] The wafer to be processed is controlled to sequentially pass through the treatment of the first film forming area, the treatment of the second film forming area, and the treatment of the nth film forming area, so as to realize the deposition of n layers of films.

[0033] Optionally, the multilayer film forming device further comprises a rotating driving mechanism connected with the bearing mechanism, when the moving track of the wafer to be processed in each film forming area is an arc, in the process of the wafer to be processed passing through the transfer area from the previous film forming area to the next film forming area, the wafer to be processed is controlled to experience a 180° rotation or no rotation operation by the rotating driving mechanism, so as to keep the force contact point between the wafer to be processed and the bearing mechanism unchanged when the wafer to be processed moves in the reaction cavity.

[0034] Optionally, the wafer to be processed is controlled to experience a 180° rotation by the rotating driving mechanism, and when the moving track of the wafer to be processed in the transfer area is an arc, the wafer to be processed is controlled to rotate at a uniform speed while moving at a uniform speed in the transfer area, and the rotating speed is wherein g is the acceleration of gravity, r1 is the radius of curvature of the wafer to be processed at the rising or falling point of the moving track in the transfer area in the direction of gravity, and r2 is the radius of the moving track of the wafer to be processed in the film forming area.

[0035] The multilayer film forming device and the preparation method of the multilayer film semiconductor structure disclosed in the application have the following advantages

[0036] Beneficial effects:

[0037] In the application, the multilayer film forming device comprises a reaction cavity, a bearing mechanism and a transfer mechanism, the reaction cavity comprises a plurality of film forming areas, the bearing mechanism is installed on the transfer mechanism, the bearing mechanism is used for bearing and fixing a wafer, the transfer mechanism is used for transferring the bearing mechanism to realize the movement of the wafer in the reaction cavity, the wafer sequentially passes through the treatment of the first film forming area, the treatment of the second film forming area, and the treatment of the nth film forming area by the transfer mechanism, so as to realize the deposition of n layers of films. The reaction cavity of the multilayer film forming device can deposit a plurality of different film layers, and the wafer does not need to repeatedly enter and exit different reaction cavities, thereby improving the working efficiency of the film forming device and reducing the risk of pollution of the wafer in the transfer process.

[0038] Other features and advantages of the present application will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the principles of the application.

[0039] It should be understood that the foregoing general description and the following detailed description are only exemplary and explanatory and are not restrictive of the application as claimed. BRIEF DESCRIPTION OF DRAWINGS

[0040] The accompanying drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application. It is apparent that the drawing in the following description is only some embodiments of the present application, and other drawings can be obtained by those of ordinary skill in the art without creative labor on the basis of these drawings.

[0041] Figure 1 is a top view schematic diagram of a multilayer film forming device in an embodiment of the present application.

[0042] Figure 2 is a schematic diagram of a reaction chamber with two film forming areas in an embodiment of the present application.

[0043] Figure 3 is a schematic diagram of a reaction chamber with three film forming areas in an embodiment of the present application.

[0044] Figure 4 is a schematic diagram of a reaction chamber with four film forming areas in an embodiment of the present application.

[0045] Figure 5 is a front view schematic diagram of a multilayer film forming device in an embodiment of the present application.

[0046] Figure 6 is a position schematic diagram of a conveying driving mechanism when there are two film forming areas in an embodiment of the present application.

[0047] Figure 7 is a position schematic diagram of a conveying driving mechanism when there are three film forming areas in an embodiment of the present application.

[0048] Figure 8 is a position schematic diagram of a conveying driving mechanism when there are four film forming areas in an embodiment of the present application.

[0049] Figure 9 is a structure schematic diagram of a bearing mechanism in an embodiment of the present application.

[0050] Figure 10 is a structure schematic diagram of a sliding type walking mechanism in an embodiment of the present application.

[0051] Figure 11 is a structure schematic diagram of a spiral type conveying track in an embodiment of the present application.

[0052] Figure 12 is a structural schematic diagram of a rolling walking mechanism in an embodiment of the present application.

[0053] Figure 13 is a flow chart of a preparation method of a multi-film layer semiconductor structure in an embodiment of the present application.

[0054] Legend of reference signs:

[0055] 100, reaction cavity; 101, top plate; 102, bottom plate; 103, side plate; 110a, 1st film forming area; 110b, 2nd film forming area; 110c, 3rd film forming area; 110d, 4th film forming area; 111, gas processing area; 112, gas isolation area; 120, conveying area;

[0056] 200, carrying mechanism; 210, base; 220, turntable; 230, rotating shaft; 240, sliding block; 250, connecting shaft; 260, walking wheel set; 270, axle assembly;

[0057] 300, conveying mechanism; 310, conveying track; 311, first track; 311a, 1st first track; 311b, 2nd first track; 311c, 3rd first track; 311d, 4th first track; 3111, first guide rail segment; 312, second track; 312a, 1st second track; 312b, 2nd second track; 312c, 3rd second track; 312d, 4th second track; 3121, second guide rail segment; 320, chain; 330, sprocket;

[0058] 400, rotary driving mechanism; 410, 1st gear; 420, 2nd gear; 430, rack;

[0059] 500, air inlet assembly; 901, wafer. DETAILED DESCRIPTION

[0060] Example implementations will now be described more fully with reference to the accompanying drawings. Example implementations may, however, be implemented in many different forms and should not be construed as limited to the examples set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example implementations to those skilled in the art.

[0061] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the application can be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the application.

[0062] The application will be further described below with reference to the drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the application described below can be combined with each other as long as there is no conflict. The embodiments described below with reference to the drawings are exemplary and are intended to explain the application, but cannot be understood as limiting the application.

[0063] Referring to Figure 1 and Figure 2 In this embodiment, the multilayer film forming device based on spatially isolated atomic layer deposition includes a reaction cavity 100, a bearing mechanism 200, and a conveying mechanism 300.

[0064] In the reaction cavity 100, a first film forming area 110a for depositing a first film layer, a second film forming area 110b for depositing a second film layer, and an nth film forming area for depositing an nth film layer are provided. The number n of film forming areas is greater than or equal to 2. Each film forming area is provided with a corresponding number of gas treatment areas 111 according to the film layer to be deposited by atomic layer deposition, for example, two or three gas treatment areas 111 are provided in each film forming area. Two or three vapor phase reaction precursors for forming a film layer are respectively introduced into different gas treatment areas 111 to form one layer of a multilayer semiconductor structure. It should be noted that the number of gas treatment areas 111 is designed according to the type of film layer to be formed and is set one-to-one with the vapor phase reaction precursors. A gas isolation area 112 is provided between the last gas treatment area 111 and the next gas treatment area 111, and the wafer 901 passes through the gas isolation area 112 from the last gas treatment area 111 to the next gas treatment area 111. A conveying area 120 is provided between the last film forming area and the next film forming area, and the wafer 901 passes through the conveying area 120 from the last film forming area to the next film forming area. The gas isolation area 112 and the conveying area 120 are isolated from the gas atmosphere, and the isolation gas can be an inert gas, such as nitrogen gas.

[0065] The carrying mechanism 200 is used to carry and fix the wafer 901. The carrying mechanism 200 is installed on the conveying mechanism 300, and the conveying mechanism 300 is used to convey the carrying mechanism 200 to realize the movement of the wafer 901 in the reaction cavity 100. The wafer 901 passes through the treatment of the first film forming area 110a, the treatment of the second film forming area 110b, …, the treatment of the nth film forming area in sequence through the conveying mechanism 300, to realize the deposition of n layers of film layers. For example, the multilayer film semiconductor structure is a dielectric layer in a capacitor structure, the dielectric layer is a hafnium zirconium oxide / aluminum oxide multilayer stack, the first film forming area 110a can be used to form a ferroelectric layer (Hf 0.5 Zr 0.5 O), the second film forming area 110b can be used to form aluminum oxide (Al2O3), the third film forming area 110c can be used to form a ferroelectric layer (Hf 0.5 Zr 0.5 O), the fourth film forming area 110d can be used to form aluminum oxide (Al2O3), and the fifth film forming area can be used to form a ferroelectric layer (Hf 0.5 Zr 0.5 O).

[0066] It should be noted that the reaction cavity 100 can also include a wafer inlet and a wafer outlet which are not shown. The wafer inlet can be arranged at the first film forming area 110a, and the wafer 901 to be treated can be moved into the first film forming area 110a from the wafer inlet for treatment. The wafer outlet can be arranged at the nth film forming area, and the wafer 901 after treatment can be moved out of the nth film forming area through the wafer outlet.

[0067] A reaction cavity of an existing film forming device can only deposit a film layer composed of the same material. To deposit multiple layers of different film layers, the wafer needs to repeatedly enter and exit different reaction cavities or needs to replace the treatment gas in the reaction cavity multiple times, which significantly reduces the wafer processing efficiency and greatly increases the risk of wafer contamination during the conveying process between different reaction cavities.

[0068] The multilayer film forming device in the embodiment includes a reaction cavity 100, a carrying mechanism 200 and a conveying mechanism 300. The reaction cavity 100 includes multiple film forming areas. The carrying mechanism 200 is installed on the conveying mechanism 300, and the carrying mechanism 200 is used to carry and fix the wafer 901. The conveying mechanism 300 is used to convey the carrying mechanism 200 to realize the movement of the wafer 901 in the reaction cavity 100. The wafer 901 passes through the treatment of the first film forming area 110a, the treatment of the second film forming area 110b, …, the treatment of the nth film forming area in sequence through the conveying mechanism 300, to realize the deposition of n layers of film layers. The reaction cavity 100 of the multilayer film forming device can deposit multiple layers of different film layers. The wafer 901 does not need to repeatedly enter and exit different reaction cavities 100, which improves the working efficiency of the film forming device and reduces the risk of wafer contamination during the conveying process.

[0069] In addition, when depositing multiple layers of different films using a furnace tube device, the furnace tube has a large volume, and it is relatively difficult to control the reaction pressure, and there is a deviation in the wafer temperature at different positions, which can affect the film deposition quality. The furnace tube needs to be purged multiple times to achieve the deposition effect, which takes a longer time. In the present embodiment, the multi-layer film deposition device has a smaller volume of the reaction chamber 100 than the furnace tube, and the temperature and pressure distribution in the reaction chamber 100 is more uniform. Compared with the furnace tube device, the working efficiency is improved, and the film deposition quality is also improved.

[0070] In some embodiments, the conveying mechanism 300 includes a continuous conveying track 310 and a conveying driving mechanism, and the conveying track 310 is arranged in the reaction chamber 100. The carrying mechanism 200 is movably connected to the conveying track 310, that is, the carrying mechanism 200 can move along the conveying track 310. The carrying mechanism 200 is connected to the conveying driving mechanism, and under the driving of the conveying driving mechanism, the carrying mechanism 200 moves on the conveying track 310, so that the wafer 901 sequentially passes through the corresponding gas treatment area 111 in each film deposition area, and sequentially passes through the first film deposition area 110a, the second film deposition area 110b, and the nth film deposition area.

[0071] The carrying mechanism 200 moves on the conveying track 310 under the driving of the conveying driving mechanism, so that the wafer 901 sequentially passes through the first film deposition area 110a, the second film deposition area 110b, and the nth film deposition area, and the wafer 901 can smoothly pass through different film deposition areas, which is beneficial to improve the film deposition uniformity.

[0072] In some embodiments, the conveying track 310 includes n first tracks 311 arranged one by one in the film deposition area, and n second tracks 312 arranged in the conveying area 120. The first track 311 includes an input end and an output end, and the second track 312 connects the input end and the output end of different first tracks 311, so that the conveying track 310 forms a continuous track. Any two second tracks 312 are parallel or stereoscopic intersected.

[0073] The first track 311 arranged in the film deposition area and the second track 312 arranged in the conveying area 120 form a complete conveying track 310, so that the wafer 901 can smoothly pass through the film deposition area and the conveying area 120, which is beneficial to improve the film deposition uniformity.

[0074] For example, referring to Figure 2As shown, the number of film formation regions n = 2, and the arrow indicates the direction of movement of the carrying mechanism 200. The first second track 312a connects the output end of the first first track 311a and the input end of the second first track 311b, and the second second track 312b connects the output end of the second first track 311b and the input end of the first first track 311a. The first second track 312a and the second second track 312b are stereoscopic intersections. The plurality of first tracks 311 and the plurality of second tracks 312 are connected to form a transmission track 310 in the shape of an inverted 8.

[0075] In this embodiment, the multilayer film film formation device includes two film formation regions, and the multilayer film film formation device can be used to deposit two different film layers.

[0076] In some embodiments, referring to Figure 3 As shown, the number of film formation regions n = 3, which are the first film formation region 110a, the second film formation region 110b, and the third film formation region 110c. The first second track 312a connects the output end of the first first track 311a and the input end of the second first track 311b, the second second track 312b connects the output end of the second first track 311b and the input end of the third first track 311c, and the third second track 312c connects the output end of the third first track 311c and the input end of the first first track 311a. The first second track 312a and the second second track 312b are parallel, the first second track 312a and the third second track 312c are stereoscopic intersections, and the second second track 312b and the third second track 312c are stereoscopic intersections.

[0077] In this embodiment, the multilayer film film formation device includes three film formation regions, and the multilayer film film formation device can be used to deposit three different film layers.

[0078] In other embodiments, referring to Figure 4, the number n of the film forming regions is 4, which are the first film forming region 110a, the second film forming region 110b, the third film forming region 110c and the fourth film forming region 110d, respectively, the first film forming region 110a and the second film forming region 110b are opposite to each other, and the second film forming region 110b and the fourth film forming region 110d are opposite to each other. The first second track 312a connects the output end of the first first track 311a and the input end of the second first track 311b, the second second track 312b connects the output end of the second first track 311b and the input end of the third first track 311c, the third second track 312c connects the output end of the third first track 311c and the input end of the fourth first track 311d, and the fourth second track 312d connects the output end of the fourth first track 311d and the input end of the first first track 311a. The second second track 312b and the fourth second track 312d are parallel, the first second track 312a is three-dimensionally crossed with the second second track 312b, the third second track 312c and the fourth second track 312d, respectively, and the second second track 312b is three-dimensionally crossed with the third second track 312c.

[0079] In this embodiment, the multilayer film forming device includes four film forming regions, and the multilayer film forming device can be used to deposit four different film layers.

[0080] In some embodiments, the first track 311 includes two first rail segments 3111 arranged at intervals, and the second track 312 includes two second rail segments 3121 arranged at intervals, the first rail segments 3111 are smoothly connected with the second rail segments 3121 to form two rails arranged at equal intervals. That is, the conveying track 310 includes two rails arranged at equal intervals.

[0081] The conveying track 310 includes two rails arranged at equal intervals, and the carrying mechanism 200 is arranged across the two rails, which avoids the rotation of the carrying mechanism 200 around the rails, so that the wafer 901 can pass through different film forming regions smoothly.

[0082] Referring to Figures 1 to 5 As shown, the first rail segment 3111 includes a circular arc rail segment, the two first rail segments 3111 in the first track 311 are concentrically arranged, the center lines of all the first rail segments 3111 are located on the same track surface, the track surface has opposite first and second sides, part of the second rail segments 3121 are bent towards the first side of the track surface, and part of the second rail segments 3121 are bent towards the second side of the track surface. When the carrying mechanism 200 and the wafer 901 move along the conveying track 310, the carrying mechanism 200 and the wafer 901 first rise and then fall or first fall and then rise in the conveying region 120.

[0083] The center lines of all the first guide rail segments 3111 are located on the same rail surface, which can make the shapes and sizes of different film forming areas similar and the pressure distribution in different film forming areas more uniform. The first side of the rail surface is bent by part of the second guide rail segments 3121, and the second side of the rail surface is bent by part of the second guide rail segments 3121, so that the three-dimensional intersection structure of the second rail 312 is simpler.

[0084] It should be noted that the first guide rail segments 3111 include circular arc guide rail segments, and the center lines of all the first guide rail segments 3111 can be located on the same rail surface, but are not limited thereto. The first guide rail segments 3111 can also include spiral guide rail segments, and the center lines of all the first guide rail segments 3111 are not located on the same rail surface, which can be determined as appropriate. The two first guide rail segments 3111 in the first rail 311 are arranged at equal intervals, the second rail 312 includes straight line guide rail segments, and the two second guide rail segments 3121 in the second rail 312 are arranged in parallel. For example, as shown in Figure 11 The conveying rail 310 can make the carrier mechanism 200 and the wafer 901 spiral up from a gas isolation area 112 of the first film forming area 110a to another gas isolation area 112 of the second film forming area 110b through the conveying area 120, and spiral down from the other gas isolation area 112 of the second film forming area 110b to the other gas isolation area 112 of the first film forming area 110a through the conveying area 120.

[0085] The lifting of the carrier mechanism 200 and the wafer 901 is not limited to the conveying area 120, which can reduce the acceleration of the carrier mechanism 200 and the wafer 901 during the lifting or lowering process.

[0086] Referring to Figure 6 The conveying drive mechanism includes a chain 320, a plurality of sprockets 330, and at least one conveying driver. The chain 320 is sleeved on the plurality of sprockets 330, and the shape of the chain 320 matches the shape of the conveying rail 310. The chain 320 can be arranged at a position between the two rails of the conveying rail 310. The conveying driver is connected with the sprockets 330, and the conveying driver includes a motor. The carrier mechanism 200 is directly or indirectly connected with the chain 320. The conveying driver drives at least one sprocket 330 to rotate, and the sprocket 330 drives the carrier mechanism 200 to move along the conveying rail 310 through the chain 320.

[0087] The shape of the chain 320 can be bent according to the shape of the conveying rail 310. The chain 320 is used to drive the carrier mechanism 200 to move along the conveying rail 310, which can be applied to a multi-layer film forming device with different numbers of film forming areas.

[0088] Referring to Figure 9As shown, the carrying mechanism 200 includes a base 210, a rotating disc 220, a rotating shaft 230 and a walking mechanism. The rotating disc 220 is above the base 210, and a gap is left between the rotating disc 220 and the base 210 or the rotating disc 220 and the base 210 are in contact. A wafer groove is arranged on the front side of the rotating disc 220 for placing the wafer 901, and a through hole is arranged at the center of the base 210 to realize that one end of the rotating shaft 230 passes through the base 210 and is connected with the back side of the rotating disc 220. The rotating disc 220 and the rotating shaft 230 are fixedly connected or detachably connected. The base 210 is connected with the conveying track 310 through the walking mechanism, and the end of the rotating shaft 230 away from the rotating disc 220 is also connected with a conveying driving mechanism to realize that the conveying driving mechanism drives the carrying mechanism 200 to move along the conveying track 310. The conveying driving mechanism includes a chain 320 connected with the rotating shaft 230.

[0089] It should be noted that the conveying driving mechanism can be connected with the rotating shaft 230, but is not limited thereto, and the conveying driving mechanism can also be connected with the base 210, which can be determined according to the specific situation.

[0090] The carrying mechanism 200 includes the base 210, the rotating disc 220 and the rotating shaft 230, the rotating disc 220 is rotatably arranged on the base 210 through the rotating shaft 230, so that the rotating disc 220 can rotate relative to the conveying track 310, and the base 210 is prevented from rotating around the conveying track 310, so that the wafer 901 can pass through different film forming areas stably.

[0091] In some embodiments, the multi-layer film forming device further includes a rotating driving mechanism 400 connected with the end of the rotating shaft 230 away from the rotating disc 220 or arranged in at least part of the conveying area 120. The rotating driving mechanism 400 is used to drive the rotating disc 220 and the wafer 901 carried by the rotating disc 220 to rotate by an angle greater than or equal to 0 during the process that the carrying mechanism 200 passes through the conveying area 120 from the previous film forming area to the next film forming area. For example, the carrying mechanism 200 can drive the wafer 901 to rotate by 180°, and the carrying mechanism 200 can also not perform the rotating operation, that is, the angle by which the carrying mechanism 200 drives the wafer 901 to rotate is equal to 0.

[0092] When the wafer 901 moves in the film forming area, the actual force interaction position between the wafer 901 and the wafer groove does not change, that is, the contact point A (see Figures 2-4The actual force interaction position between the wafer 901 and the wafer groove does not change; during the process of the wafer 901 passing through the transfer area 120, the rotation driving mechanism 400 drives the turntable 220 and the wafer 901 carried by the turntable 220 to rotate 180°, so as to ensure that the wafer 901 moves from the last film forming area to the next film forming area, the actual force interaction position between the wafer 901 and the wafer groove does not change, and the particle pollution caused by the force interaction between the wafer 901 and the wafer groove is minimized, thereby avoiding the vibration and displacement of the wafer 901 affecting the product quality.

[0093] Referring to Figure 9 As shown in the figure, the rotation driving mechanism 400 is connected to the end of the rotating shaft 230 away from the turntable 220. The rotation driving mechanism 400 includes a first gear 410, a second gear 420 and at least one rotation driver. The first gear 410 is sleeved on the rotating shaft 230, the second gear 420 is engaged with the first gear 410, and the rotation driver is connected with the second gear 420. The rotation driver includes a motor, and drives the second gear 420 to rotate to drive the rotating shaft 230 to rotate.

[0094] During the process of the carrying mechanism 200 passing through the transfer area 120 from the last film forming area to the next film forming area, the rotation driver drives the turntable 220 and the wafer 901 carried by the turntable 220 to rotate 180° through the second gear 420, the first gear 410 and the rotating shaft 230, so as to ensure that the wafer 901 moves from the last film forming area to the next film forming area, and the actual force interaction position between the wafer 901 and the wafer groove does not change.

[0095] Referring to Figure 2 As shown in the figure, when the multi-layer film forming device includes two film forming areas, the theoretical force interaction position between the wafer 901 and the wafer groove will change when the carrying mechanism 200 passes through the transfer area 120. The rotation driver controls the turntable 220 and the wafer 901 carried by the turntable 220 to rotate 180°, so that the actual force interaction position between the wafer 901 and the wafer groove does not change in the two film forming areas.

[0096] Referring to Figure 3As shown, the multi-layer film forming device includes three film forming areas. When the carrying mechanism 200 passes through the transfer area 120 between the first film forming area 110a and the second film forming area 110b, the theoretical force interaction position between the wafer 901 and the wafer groove changes, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. When the carrying mechanism 200 passes through the transfer area 120 between the second film forming area 110b and the third film forming area 110c, the theoretical force interaction position between the wafer 901 and the wafer groove changes, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. When the carrying mechanism 200 passes through the transfer area 120 between the third film forming area 110c and the first film forming area 110a, the theoretical force interaction position between the wafer 901 and the wafer groove does not change, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220.

[0097] Referring to Figure 4 As shown, the multi-layer film forming device includes four film forming areas. When the carrying mechanism 200 passes through the transfer area 120 between the first film forming area 110a and the second film forming area 110b, the theoretical force interaction position between the wafer 901 and the wafer groove changes, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. When the carrying mechanism 200 passes through the transfer area 120 between the second film forming area 110b and the third film forming area 110c, the theoretical force interaction position between the wafer 901 and the wafer groove does not change, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220. When the carrying mechanism 200 passes through the transfer area 120 between the third film forming area 110c and the fourth film forming area 110d, the theoretical force interaction position between the wafer 901 and the wafer groove changes, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. When the carrying mechanism 200 passes through the transfer area 120 between the fourth film forming area 110d and the first film forming area 110a, the theoretical force interaction position between the wafer 901 and the wafer groove does not change, and the rotation driver controls the rotation of the turntable 220 and the wafer 901 carried by the turntable 220.

[0098] In some embodiments, referring to Figure 6 As shown, the rotation driving mechanism 400 includes a first gear 410 and a rack 430, the first gear 410 is sleeved on the rotating shaft 230, and the rack 430 is arranged in at least part of the transfer area 120. The rack 430 is stationary relative to the transfer track 310. During the process that the carrying mechanism 200 passes through the transfer area 120, the rack 430 meshes with the first gear 410 to drive the rotation of the first gear 410.

[0099] Referring to Figure 6As shown in the figure, when the multi-layer film forming device includes two film forming areas, the interaction position between the wafer 901 and the wafer groove changes when the carrying mechanism 200 passes through the transfer area 120. A rack 430 can be arranged in each transfer area 120 to rotate the turntable 220 and the wafer 901 carried by the turntable 220 by 180°.

[0100] Referring to Figure 7 As shown in the figure, the multi-layer film forming device includes three film forming areas. The interaction position between the wafer 901 and the wafer groove changes when the carrying mechanism 200 passes through the transfer area 120 between the first film forming area 110a and the second film forming area 110b. A rack 430 can be arranged in the transfer area 120 between the first film forming area 110a and the second film forming area 110b to rotate the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. The interaction position between the wafer 901 and the wafer groove changes when the carrying mechanism 200 passes through the transfer area 120 between the second film forming area 110b and the third film forming area 110c. A rack 430 can be arranged in the transfer area 120 between the second film forming area 110b and the third film forming area 110c to rotate the turntable 220 and the wafer 901 carried by the turntable 220 by 180°. The interaction position between the wafer 901 and the wafer groove does not change when the carrying mechanism 200 passes through the transfer area 120 between the third film forming area 110c and the first film forming area 110a. Therefore, a rack 430 does not need to be arranged in the transfer area 120 between the third film forming area 110c and the first film forming area 110a.

[0101] Referring to Figure 8As shown, the multilayer film forming device includes four film forming areas. The wafer 901 and the wafer groove interact with the theoretical force position changes when the carrying mechanism 200 passes through the transmission area 120 between the first film forming area 110a and the second film forming area 110b. The rack 430 can be arranged in the transmission area 120 between the first film forming area 110a and the second film forming area 110b, so that the rotating disc 220 and the wafer 901 carried by the rotating disc 220 rotate 180°. The wafer 901 and the wafer groove interact with the theoretical force position do not change when the carrying mechanism 200 passes through the transmission area 120 between the second film forming area 110b and the third film forming area 110c. The rack 430 does not need to be arranged in the transmission area 120 between the second film forming area 110b and the third film forming area 110c. The wafer 901 and the wafer groove interact with the theoretical force position changes when the carrying mechanism 200 passes through the transmission area 120 between the third film forming area 110c and the fourth film forming area 110d. The rack 430 can be arranged in the transmission area 120 between the third film forming area 110c and the fourth film forming area 110d, so that the rotating disc 220 and the wafer 901 carried by the rotating disc 220 rotate 180°. The wafer 901 and the wafer groove interact with the theoretical force position do not change when the carrying mechanism 200 passes through the transmission area 120 between the fourth film forming area 110d and the first film forming area 110a. The rack 430 does not need to be arranged in the transmission area 120 between the fourth film forming area 110d and the first film forming area 110a.

[0102] The rack 430 is arranged in at least part of the transmission area 120. During the process of the carrying mechanism 200 passing through the transmission area 120, the rack 430 is engaged with the first gear 410 to drive the first gear 410 to rotate. The rack 430 is stationary relative to the transmission rail 310, which reduces the rotary driver and makes the structure of the multilayer film forming device simpler, thereby reducing the manufacturing cost of the multilayer film forming device.

[0103] Referring to Figure 10 As shown, the transmission rail 310 is a double-rail rail, and the rail spacing is the same at all positions. The walking mechanism includes two sliders 240, which are respectively and correspondingly slidably connected with the two rails of the transmission rail 310. The two sliders 240 are symmetrically fixed on the back of the base 210 with the axis of the rotating shaft 230 as the axis of symmetry. The transmission mechanism 300 drives the sliders 240 to slide along the rails to realize the movement of the wafer 901 in the reaction cavity 100.

[0104] The base 210 is arranged on the transmission rail 310 through the sliders 240, and the sliding resistance can be reduced through the sliders 240, so that the carrying mechanism 200 and the wafer 901 carried thereby can slide smoothly on the transmission rail 310.

[0105] It should be noted that the slider 240 can be fixedly connected with the base 210, but is not limited thereto. The slider 240 can also be pivotally connected with the base 210 through the connecting shaft 250. The slider 240 can be pivoted relative to the base 210 when the base 210 passes through the curved portion of the conveying track 310, so as to adapt to the curved conveying track 310.

[0106] In some embodiments, referring to Figure 12 As shown, the conveying track 310 is a double-rail track, and the rail spacing is the same at all positions. The walking mechanism includes two walking wheel sets 260 and an axle assembly 270. The two walking wheel sets 260 are connected with the base 210 through the axle assembly 270, and the two walking wheel sets 260 are symmetrically arranged about the axis of the rotating shaft 230. The walking wheel set 260 is connected with the two rails of the conveying track 310 one by one, and the walking wheel set 260 includes at least one walking wheel which is rollably arranged on the rail.

[0107] The base 210 is arranged on the conveying track 310 through the walking wheel set 260. When passing through the curved conveying track 310, the rotating speeds of the walking wheels of the walking wheel sets 260 located at the inner and outer sides can be different, so as to avoid the base 210 from being stuck when passing through the curved portion of the conveying track 310.

[0108] Referring to Figure 5 As shown, the gas inlet assembly 500 and the gas outlet assembly are respectively arranged in each gas processing area 111, each gas isolation area 112 and each conveying area 120. Specifically, the reaction cavity 100 includes opposite top plate 101 and bottom plate 102. The conveying track 310 is arranged between the top plate 101 of the reaction cavity 100 and the bottom plate 102 of the reaction cavity 100. The gas outlet assembly is connected with the bottom plate 102 of the reaction cavity 100. The gas inlet assembly 500 includes at least a first gas inlet assembly. The first gas inlet assembly is arranged between the top plate 101 of the reaction cavity 100 and the first track 311 in the gas processing area 111, and is used for introducing a gas-phase precursor into the gas processing area 111. Each film forming area is provided with two or three gas processing areas 111. Two or three gas-phase reaction precursors for forming a film layer are introduced into different gas processing areas 111, so as to form one layer of a multi-layer film semiconductor structure. It should be noted that the number of the gas processing areas 111 is designed according to the types of the film layers, and is arranged one by one with the gas-phase reaction precursors.

[0109] The gas inlet assembly 500 can further comprise a second gas inlet assembly arranged in the gas isolation area 112 and between the top plate 101 of the reaction cavity 100 and the first track 311; the second gas inlet assembly is also arranged in the transfer area 120 and on the side of the second track 312 away from the bottom plate 102 of the reaction cavity 100, and the carrying mechanism 200 can pass between the second gas inlet assembly and the second track 312. The second gas inlet assembly is used to introduce non-active gas, which includes inert gas and nitrogen.

[0110] The gas inlet assembly 500 and the gas outlet assembly are arranged on the upper and lower sides of the reaction cavity 100, which facilitates the introduction of non-active gas and gas-phase reaction precursors into the corresponding areas in the reaction cavity 100 and the discharge of gas.

[0111] Referring to Figure 2 As shown, the reaction cavity 100 comprises opposite top plate 101 and bottom plate 102, and the transfer track 310 is arranged between the top plate 101 of the reaction cavity 100 and the bottom plate 102 of the reaction cavity 100. The reaction cavity 100 comprises side plates 103, which surround the transfer track 310 and are connected to the top plate 101 and the bottom plate 102 of the reaction cavity 100. The outer contour of the transfer track 310 in the orthographic projection on the bottom plate 102 of the reaction cavity 100 is similar to the inner contour of the side plate 103 of the reaction cavity 100 in the orthographic projection on the bottom plate 102 of the reaction cavity 100, i.e., the side plate 103 of the reaction cavity 100 is arranged according to the shape of the transfer track 310, and the distances from different positions outside the transfer track 310 to the side plate 103 of the reaction cavity 100 can be substantially equal.

[0112] The outer contour of the transfer track 310 in the orthographic projection on the bottom plate 102 of the reaction cavity 100 is similar to the inner contour of the side plate 103 of the reaction cavity 100 in the orthographic projection on the bottom plate 102 of the reaction cavity 100, which can reduce the volume of the reaction cavity 100 and facilitate the accurate control of the temperature and pressure in the reaction cavity 100.

[0113] The application further provides a preparation method of a multilayer film semiconductor structure, which is prepared by using the above disclosed multilayer film forming device. Referring to Figure 1 、 Figure 2 and Figure 13 As shown, the preparation method of the multilayer film semiconductor structure comprises the following steps:

[0114] S100: preparing a wafer 901 to be processed and feeding it into the multilayer film forming device;

[0115] S200: controlling the wafer 901 to be processed to sequentially pass through the treatment of the first film forming area 110a, the treatment of the second film forming area 110b, …, and the treatment of the nth film forming area, so as to realize the deposition of n layers of films.

[0116] The plurality of film forming regions of the multilayer film forming device in the embodiment can respectively deposit different film layers. The wafer 901 to be processed sequentially passes through the processing of the first film forming region 110a, the processing of the second film forming region 110b, and the processing of the nth film forming region, so as to realize the deposition of n layers of film layers. The wafer 901 does not need to repeatedly enter and exit different reaction cavities 100, the deposition efficiency of the multilayer film semiconductor structure is improved, and the risk of contamination of the wafer 901 in the conveying process is reduced.

[0117] In some embodiments, the multilayer film forming device further comprises a rotating driving mechanism 400 connected with the carrying mechanism 200. When the moving track of the wafer 901 to be processed in each film forming region is a circular arc, in the process of the wafer 901 to be processed passing through the conveying region 120 from the last film forming region to the next film forming region: the wafer 901 to be processed is controlled to experience a rotation of 180° or no rotation operation by the rotating driving mechanism 400. That is, when the wafer 901 to be processed moves in the last film forming region and the next film forming region, the force contact point A between the wafer 901 to be processed and the carrying mechanism 200 (or the wafer groove) remains unchanged.

[0118] The multilayer film forming device comprises two film forming regions. If the wafer 901 is not rotated, the theoretical force interaction position between the wafer 901 and the wafer groove is different in the two film forming regions when the wafer 901 moves in the first film forming region 110a and the second film forming region 110b. In the conveying region 120 between the first film forming region 110a and the second film forming region 110b, the wafer 901 to be processed is controlled to experience a rotation of 180° by the rotating driving mechanism 400 in the moving process of the wafer 901 to be processed, so as to realize that the actual force interaction position between the wafer 901 and the wafer groove is the same in the two film forming regions, that is, the force contact point A remains unchanged, and the particle contamination caused by the force interaction between the wafer 901 and the wafer groove can be reduced.

[0119] The multilayer film forming device comprises two film forming regions. The theoretical force interaction position between the wafer 901 and the wafer groove changes every time the carrying mechanism 200 passes through the conveying region 120, and the wafer 901 to be processed needs to experience a rotation of 180° every time by the rotating driving mechanism 400.

[0120] For example, the multilayer film forming device includes three film forming areas. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 needs to be rotated 180° by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the first film forming area 110a and the second film forming area 110b. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 needs to be rotated 180° by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the second film forming area 110b and the third film forming area 110c. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 does not need to be rotated by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the third film forming area 110c and the first film forming area 110a.

[0121] The multilayer film forming device includes four film forming areas. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 needs to be rotated 180° by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the first film forming area 110a and the second film forming area 110b. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 does not need to be rotated by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the second film forming area 110b and the third film forming area 110c. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 needs to be rotated 180° by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the third film forming area 110c and the fourth film forming area 110d. When the wafer 901 and the wafer groove interact with each other at a theoretical force position, the wafer 901 does not need to be rotated by the rotation driving mechanism 400 when the wafer 901 passes through the transfer area 120 between the fourth film forming area 110d and the first film forming area 110a.

[0122] That is, according to the movement trajectory of the wafer 901 in the last film forming area and the next film forming area, it is determined whether the theoretical force interaction position between the wafer 901 and the wafer groove is different in the last film forming area and the next film forming area, and whether the wafer 901 needs to be rotated by the rotation driving mechanism 400 in the transfer area 120 from the last film forming area to the next film forming area to keep the force contact point A between the wafer 901 and the wafer groove unchanged.

[0123] In some embodiments, the first guide segments 3111 comprise circular-arc guide segments, two first guide segments 3111 in the first track 311 are concentrically arranged, and the center lines of all the first guide segments 3111 are located on the same track surface. The track surface has opposite first and second sides, part of the second guide segments 3121 are bent towards the first side of the track surface, and part of the second guide segments 3121 are bent towards the second side of the track surface. When the carrier mechanism 200 and the wafer 901 move along the conveying track 310, the carrier mechanism 200 and the wafer 901 first rise and then fall or first fall and then rise in the conveying area 120, and the wafer 901 is prone to flying up due to too high movement speed during the rising or falling process.

[0124] In this embodiment, the rotation driving mechanism 400 is used to control the wafer 901 to undergo a rotation of 180°, and when the movement trajectory of the wafer 901 in the conveying area 120 is also a circular arc, the wafer 901 is controlled to move at a constant speed and rotate at a constant speed in the conveying area 120. If it is desired to avoid the wafer 901 from flying up due to too high movement speed during the rising or falling process, the rotation speed N of the wafer 901 needs to satisfy the following condition:

[0125]

[0126] wherein g is the acceleration of gravity, r1 is the radius of curvature of the wafer 901 in the conveying area 120 in the direction of gravity at the rising or falling point, and r2 is the radius of the trajectory of the wafer 901 in the film-forming area.

[0127] For example, when the radius of curvature r1 of the wafer 901 in the conveying area 120 in the direction of gravity at the rising or falling point is 2-3 m, the speed v of the base 210 moving at a constant speed along the conveying track 310 needs to satisfy the following condition:

[0128]

[0129] According to the speed v of the base 210 moving at a constant speed along the conveying track 310, the rotation speed N of the base 210 and the wafer 901 can be calculated;

[0130]

[0131] wherein r2 is the radius of the trajectory of the base 210 in the first track 311, for example, when the radius r2 of the trajectory is 1.500-1.511 m, the calculation result of the rotation speed N of the base 210 and the wafer 901 is 37-46 rpm.

[0132] At this time, in the conveying area 120 through which the last film forming area to the next film forming area, the rotation speed of the wafer 901 to be processed is controlled not to exceed 37 rpm, so that the wafer 901 to be processed can be prevented from flying due to too high speed during the rising or falling process.

[0133] The terms "first", "second", etc. are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0134] In the present application, unless otherwise explicitly specified and limited, the terms "assembly", "connection" and the like should be understood broadly, for example, can be fixed connection, can be detachable connection, or integral; can be mechanical connection, can be electrical connection; can be directly connected, can be indirectly connected through an intermediate medium, can be internal communication of two elements or interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0135] In the description of the present application, the description of the terms "some embodiments", "exemplarily" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are contained in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in the present application and the features of the different embodiments or examples without contradiction.

[0136] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limiting the present application. Those skilled in the art can make changes, modifications, replacements and variations to the above embodiments within the scope of the present application, and any changes or modifications made according to the claims and description of the present application shall be within the scope of the present application.

Claims

1. A multilayer film deposition apparatus based on spatially isolated atomic layer deposition, characterized in that, include: A reaction chamber, within which is provided a first film-forming region for depositing a first film layer; The second film-forming region is used for depositing the second film layer;… The nth film-forming region is used to deposit the nth film layer; where n≥2; each film-forming region is provided with a corresponding number of gas processing regions according to the film layer to be deposited by atomic layer deposition, and a gas isolation region is provided between the previous gas processing region and the next gas processing region. The wafer passes through the gas isolation region from the previous gas processing region to the next gas processing region. A transfer region is provided between the previous film-forming region and the next film-forming region. The transfer region is an isolated gas atmosphere. The wafer passes through the transfer region from the previous film-forming region to the next film-forming region. The support mechanism is used to support and fix the wafer; A conveying mechanism, wherein the carrier mechanism is mounted on the conveying mechanism, and the conveying mechanism is used to convey the carrier mechanism to realize the movement of the wafer within the reaction chamber; The wafer passes through the first film-forming region, the second film-forming region, ..., the nth film-forming region sequentially via the transport mechanism to achieve the deposition of n film layers.

2. The multilayer film forming apparatus according to claim 1, characterized in that, The conveying mechanism includes a continuous conveying track and a conveying drive mechanism, wherein the conveying track is disposed within the reaction chamber; The carrier mechanism is movably connected to the conveying track and is connected to the conveying drive mechanism. Under the drive of the conveying drive mechanism, the carrier mechanism moves on the conveying track so that the wafer sequentially passes through the corresponding gas processing areas in each of the film-forming areas, and sequentially passes through the first film-forming area, the second film-forming area, ..., the nth film-forming area.

3. The multilayer film forming apparatus according to claim 2, characterized in that, The conveying track includes n first tracks that are arranged one-to-one with the film-forming area, and n second tracks that are arranged in the conveying area; The first track includes an input end and an output end, and the second track connects the input ends and output ends of different first tracks, so that the transmission tracks form a continuous track, and any two second tracks are parallel or intersecting in three dimensions.

4. The multilayer film forming apparatus according to claim 3, wherein n=2, the first second track connects the output end of the first first track and the input end of the second first track, the second second track connects the output end of the second first track and the input end of the first first track, and the first and second second tracks intersect in a three-dimensional manner; or n=3, the first second track connects the output end of the first first track and the input end of the second first track, the second second track connects the output end of the second first track and the input end of the third first track, the third second track connects the output end of the third first track and the input end of the first first track, the first second track and the second second track are parallel, the first second track intersects the third second track in a three-dimensional manner, and the second second track intersects the third second track in a three-dimensional manner; or n = 4. The first second track connects the output end of the first first track and the input end of the second first track. The second second track connects the output end of the second first track and the input end of the third first track. The third second track connects the output end of the third first track and the input end of the fourth first track. The fourth second track connects the output end of the fourth first track and the input end of the first first track. The second second track and the fourth second track are parallel. The first second track is respectively three-dimensionally crossed with the second second track, the third second track and the fourth second track. The second second track is three-dimensionally crossed with the third second track.

5. The multilayer film forming apparatus according to claim 3, characterized in that, The first track includes two first guide rail segments arranged at intervals. The second track includes two second guide rail segments arranged at intervals. The first guide rail segment is smoothly connected to the second guide rail segment to form two guide rails arranged at equal intervals.

6. The multilayer film forming apparatus according to claim 5, characterized in that, The first guide rail segment includes an arc guide rail segment. The two first guide rail segments in the first track are concentrically arranged. The center lines of all the first guide rail segments are located on the same track plane. The track plane has an opposite first side and second side. Some of the second guide rail segments bend towards the first side of the track plane, and some of the second guide rail segments bend towards the second side of the track plane; or The first guide rail segment includes a spiral guide rail segment. The two first guide rail segments in the first track are arranged at equal intervals. The second track includes a linear guide rail segment. The two second guide rail segments in the second track are arranged in parallel.

7. The multilayer film forming apparatus according to claim 2, characterized in that, The conveying drive mechanism includes a chain, a plurality of sprockets and at least one conveying driver. The chain is sleeved on the plurality of sprockets. The shape of the chain matches the shape of the conveying track. The conveying driver is connected to the sprocket. The conveying driver includes a motor. The carrying mechanism is directly or indirectly connected to the chain. The conveying driver drives the sprocket to rotate. The sprocket drives the carrying mechanism to move along the conveying track through the chain.

8. The multilayer film forming apparatus according to claim 2, characterized in that, The carrying mechanism includes a base, a turntable, a rotating shaft and a traveling mechanism; The turntable is located above the base. A wafer groove is provided on the front surface of the turntable for placing a wafer. A through hole is provided at the center of the base to enable one end of the rotating shaft to pass through the base and be fixedly connected to the back surface of the turntable; The base is connected to the conveying track through the traveling mechanism. The end of the rotating shaft far from the turntable is also connected to the conveying drive mechanism to enable the conveying drive mechanism to drive the carrying mechanism to move along the conveying track.

9. The multilayer film forming apparatus according to claim 8, characterized in that, It also includes a rotary drive mechanism, which is connected to the end of the rotating shaft away from the turntable or is disposed in at least part of the conveying area. The rotary drive mechanism is used to drive the turntable and the wafer carried by the turntable to rotate by a certain angle, and the rotation angle is greater than or equal to 0, during the process of the carrier mechanism passing through the conveying area from the previous film-forming area to the next film-forming area.

10. The multilayer film forming apparatus according to claim 9, characterized in that, The rotary drive mechanism is connected to the end of the rotating shaft away from the turntable. The rotary drive mechanism includes a first gear, a second gear, and at least one rotary driver. The first gear is sleeved on the rotating shaft, the second gear meshes with the first gear, and the rotary driver is connected to the second gear. The rotary driver includes a motor, and the rotary driver drives the second gear to rotate, thereby causing the rotating shaft to rotate. or The rotary drive mechanism is disposed in at least a portion of the conveying area. The rotary drive mechanism includes a first gear and a rack. The first gear is sleeved on the rotating shaft, and the rack is disposed in at least a portion of the conveying area. During the process of the carrying mechanism passing through the conveying area, the rack meshes with the first gear, driving the first gear to rotate.

11. The multilayer film forming apparatus according to claim 8, characterized in that, The conveying track is a double-rail track with the same spacing between the rails at all positions. The walking mechanism includes two sliders, which are slidably connected to the two rails of the conveying track respectively. The two sliders are symmetrically fixed on the back of the base with the axis of rotation as the axis of symmetry. The conveying mechanism drives the sliders to slide along the rails to realize the movement of the wafer in the reaction chamber.

12. The multilayer film forming apparatus according to claim 8, characterized in that, The conveying track is a double-rail track with the same spacing between the rails at all positions. The walking mechanism includes two sets of walking wheels and a wheel bridge assembly. The two sets of walking wheels are connected to the base through the wheel bridge assembly. The two sets of walking wheels are symmetrically arranged about the axis of rotation. Each set of walking wheels is connected to one of the two rails of the conveying track. Each set of walking wheels includes at least one walking wheel, which is rotatably mounted on the rail.

13. The multilayer film forming apparatus according to claim 1, characterized in that, Each of the gas processing areas, each of the gas isolation areas, and each of the conveying areas is respectively provided with a corresponding gas intake component and an exhaust component.

14. A method for preparing a multi-layer film semiconductor structure, which is prepared by using the multi-layer film forming apparatus according to any one of claims 1-13, characterized in that, Includes the following steps: Prepare the wafer to be processed and put it into the multilayer film forming apparatus; The wafer to be processed is controlled to sequentially pass through the first film-forming region, the second film-forming region, ..., the nth film-forming region to achieve the deposition of n film layers.

15. The method for preparing a multilayer semiconductor structure according to claim 14, characterized in that, The multilayer film forming apparatus further includes a rotary drive mechanism connected to the support mechanism. When the movement trajectory of the wafer to be processed in each film forming region is an arc, during the process of the wafer to be processed moving from the previous film forming region to the next film forming region through the transfer region: the rotary drive mechanism controls the wafer to be processed to undergo a 180° rotation, or not to perform a rotation operation; so that the force contact point between the wafer to be processed and the support mechanism remains unchanged when the wafer to be processed moves in the reaction chamber.

16. The method for preparing a multilayer semiconductor structure according to claim 15, characterized in that, The rotary drive mechanism controls the wafer to undergo a 180° rotation. While the wafer's movement trajectory in the transport area is an arc, the mechanism controls the wafer to rotate at a constant speed while moving uniformly within the transport area. The rotation speed... in: g is the acceleration due to gravity, r1 is the radius of curvature of the rising or falling point of the wafer to be processed in the transport area in the direction of gravity, and r2 is the radius of the trajectory of the wafer to be processed in the film forming area.

Images