Ultra-high resolution phase change display device based on linear backlight

Abstract

The present invention provides an ultra-high resolution phase change display device based on a linear backlight source, the device comprising: a linear RGB backlight source light-emitting component, comprising an LED excitation light source, a diffusion plate and a linear quantum dot layer arranged in sequence from bottom to top; the linear quantum dot layer comprises linear red quantum dots and linear green quantum dots of the same layer, the linear quantum dot layer covers one side of the diffusion plate, and the linear RGB backlight source light-emitting component is used to emit RGB light; a pixelated phase change filter structure is located above the linear RGB backlight source light-emitting component, and the pixelated phase change filter structure comprises an RG cut-off filter structure, a B filter structure and a black photoresist; the RG cut-off filter structure is used to filter out blue light from the light emitted by the received linear red and green quantum dots, the B filter structure is used to retain blue light from the light emitted by the received diffusion plate, and the black photoresist is used to block the light in the non-pixel area. The present invention reduces the pixel size while ensuring the display effect.

Description

Technical Field

[0001] The present invention relates to the technical field of display equipment, and in particular to an ultra-high-resolution phase-change display device based on a linear backlight source. Background Art

[0002] Phase change materials are a type of material with reversible phase change properties that can achieve rapid light response through electric field stimulation. Compared with traditional liquid crystal materials, phase change materials have faster light response speeds (nanosecond level) and smaller pixel sizes (nanometer level). Phase change display technology is a display technology that uses the optoelectronic properties of phase change materials to control the color or grayscale level of pixels. Phase change display technology has the characteristics of high resolution, high frame rate, and low energy consumption.

[0003] The combination of phase change display technology and quantum dot technology, combined with a suitable filter structure, can enable phase change display technology to achieve efficient color modulation. However, in the process of making small-size (<5um) pixels, due to the diffraction and scattering effects of light, the photoresist doped with quantum dots often cannot expose the required pixel pattern, so it is necessary to combine the actual process conditions to design a phase change display structure suitable for ultra-high resolution. Summary of the invention

[0004] The present invention provides an ultra-high resolution phase change display device based on a linear backlight source, which is used to solve the defect of ultra-high resolution phase change display devices in the prior art that the pattern shape is not ideal when they are manufactured in small sizes, and to achieve a device with a smaller pixel size using limited processes while ensuring the display effect.

[0005] The present invention provides an ultra-high-resolution phase-change display device based on a linear backlight source, comprising:

[0006] A linear RGB backlight light-emitting component includes an LED excitation light source, a diffusion plate, and a linear quantum dot layer arranged in sequence from bottom to top;

[0007] The linear quantum dot layer includes linear red quantum dots and linear green quantum dots in the same layer, the linear quantum dot layer covers one side of the diffusion plate, and the linear RGB backlight source light emitting component is used to emit RGB light;

[0008] A pixelated phase-change filter structure is located on the linear RGB backlight light-emitting component, and the pixelated phase-change filter structure includes an RG cut-off filter structure, a B filter structure and a black photoresist;

[0009] The RG cutoff filter structure is used to filter out blue light from the received light emitted by the linear red quantum dots and the linear green quantum dots, the B filter structure is used to retain blue light from the received light emitted by the diffuser, and the black photoresist is used to block light in non-pixel areas.

[0010] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the RG cut-off filter structure comprises a DBR multilayer film, an isolation layer and a phase-change layer arranged in sequence from bottom to top;

[0011] The DBR multilayer film structures corresponding to the linear red quantum dots and the linear green quantum dots are identical and connected.

[0012] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the DBR multilayer film includes a plurality of film layer groups, each film layer group includes a first film layer and a second film layer, and the first film layer is located below the second film layer;

[0013] The refractive index of the first film layer is greater than a first preset threshold value and the extinction coefficient is less than a second preset threshold value;

[0014] The refractive index of the second film layer is less than or equal to the first preset threshold value, and the extinction coefficient is less than the second preset threshold value.

[0015] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the number of periods of each film layer group is greater than or equal to 5, and the optical thickness of each film layer is 120nm±2.5nm.

[0016] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the isolation layer is made of a transparent material and has a refractive index less than a third preset threshold, and the optical thickness of the isolation layer is greater than 6 um.

[0017] According to an ultra-high-resolution phase change display device based on a linear backlight source provided by the present invention, the phase change layer includes a phase change material and transparent electrode layers located on both sides of the phase change material.

[0018] According to an ultra-high-resolution phase change display device based on a linear backlight source provided by the present invention, under electrical stimulation or laser stimulation, the phase change material switches between a crystalline state and an amorphous state, so that the transmittance of the phase change layer changes to perform light filtering.

[0019] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the phase-change material is Sb2Te3, and the thickness of the phase-change material is less than 100 nm.

[0020] According to the present invention, an ultra-high-resolution phase change display device based on a linear backlight source also includes a crossbar control structure, wherein the crossbar control structure includes a plurality of first electrodes arranged in parallel and a plurality of second electrodes arranged in parallel, wherein the plurality of first electrodes and the plurality of second electrodes are perpendicular and intersecting to form a cross point array, and each cross point in the cross point array is provided with a light modulation pixel unit.

[0021] According to an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention, the wavelength of the LED excitation light source is 450nm±10nm.

[0022] The ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention adopts a linear backlight source structure with a better pattern shape in the photolithography technology, and cooperates with a high-precision pixelated phase-change filter structure. While ensuring the display effect, a device with a smaller pixel size can be realized by using limited processes, thereby solving the problem of unsatisfactory pattern shape of ultra-high-resolution phase-change display devices when they are manufactured in small sizes; in order to solve the noise problem caused by the filter structure, an isolation layer is used to optimize the effect, so that the filter spectrum of the device is smooth and efficient; in addition, a cut-off phase-change filter structure is used to replace a bandpass phase-change filter structure, which not only simplifies the manufacturing process, but also improves the transmittance and display effect of the device. The device has a fast response speed, high resolution, high light utilization rate and simple process steps. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 is a front view of an ultra-high-resolution phase-change display device based on a linear backlight source provided by the present invention;

[0025] Figure 2 It is a left side view of an ultra-high resolution phase change display device based on a linear backlight source provided by the present invention;

[0026] Figure 3 It is a schematic top view of the structural relationship between the linear quantum dot layer and the phase change layer in the ultra-high resolution phase change display device based on the linear backlight source provided by the present invention;

[0027] Figure 4 It is a schematic diagram of the DBR multilayer film structure in the ultra-high resolution phase change display device based on the linear backlight source provided by the present invention;

[0028] Figure 5 The present invention is a schematic diagram of the structure of a crossbar control electrode in an ultra-high resolution phase change display device based on a linear backlight source.

[0029] Reference numerals:

[0030] 101 is an LED excitation light source; 102 is a diffusion plate; 103 is a linear red quantum dot; 104 is a linear green quantum dot; 105 is a black photoresist; 106 is an RG cut-off filter structure; 107 is an isolation layer; 108 is a phase change layer; 201 is an RGB sub-pixel of the phase change layer; 202 is red and green linear quantum dots; 301 is a transparent electrode layer; 302 is a phase change material; 304 is a first film layer; 303 is a second film layer. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] Combine the following Figure 1 and Figure 2 The present invention is described as an ultra-high-resolution phase-change display device based on a linear backlight source, comprising:

[0033] A linear RGB backlight light-emitting component includes an LED excitation light source 101, a diffusion plate 102 and a linear quantum dot layer arranged in sequence from bottom to top;

[0034] The linear quantum dot layer includes linear red quantum dots 103 and linear green quantum dots 104 in the same layer, and the linear RGB backlight light emitting component is used to emit RGB light;

[0035] A pixelated phase-change filter structure is located on the linear RGB backlight light emitting component, and the pixelated phase-change filter structure includes an RG cut-off filter structure 106, a B filter structure and a black photoresist 105;

[0036] The RG cutoff filter structure 106 is used to filter out blue light from the light emitted by the linear red quantum dots 103 and the linear green quantum dots 104, the B filter structure is used to retain blue light from the light emitted by the diffuser, and the black photoresist 105 is used to block light in non-pixel areas.

[0037] The B filter structure includes an isolation layer 107 and a phase change layer 108. Since the linear quantum dot layer does not completely cover the diffuser 102, the light emitted by the diffuser 102 is not completely covered by the linear quantum dot layer, and the uncovered light emitted by the diffuser 102 is directed toward the B filter structure, which filters the light and retains the blue light.

[0038] It should be noted that, when the B filter structure is extended to cover the RG cut-off filter structure 106, Figure 1 and Figure 2 As shown, the light is filtered by the B filter structure, retaining blue light, red light and green light.

[0039] like Figure 3 As shown, there is a gap between two adjacent pairs of red and green linear quantum dots 202, the R pixels and G pixels in the RGB sub-pixels 201 of the phase change layer 108 correspond one-to-one to the positions of the red and green linear quantum dots 202, and the B pixels correspond to the positions of the gaps.

[0040] The high-resolution phase change display device provided in this embodiment is suitable for various display devices, including but not limited to augmented reality / virtual reality devices (AR / VR), vehicle-mounted displays, mobile device displays, etc.

[0041] This embodiment adopts a linear backlight structure with a better pattern shape in the photolithography technology, combined with a high-precision pixelated phase change filter structure, and can realize a device with a smaller pixel size by using limited processes while ensuring the display effect, thereby solving the problem of unsatisfactory pattern shape of ultra-high resolution phase change display devices when they are produced in small sizes; in order to solve the noise problem caused by the filter structure, an isolation layer is used to optimize the effect, so that the filter spectrum of the device is smooth and efficient; in addition, a cut-off phase change filter structure is used to replace a bandpass phase change filter structure, which not only simplifies the manufacturing process, but also improves the transmittance and display effect of the device. The device has a fast response speed, high resolution, high light utilization rate and simple process steps.

[0042] On the basis of the above embodiment, the RG cut-off type filter structure in this embodiment includes a DBR multilayer film, an isolation layer and a phase change layer arranged in sequence from bottom to top;

[0043] The DBR multilayer film structures corresponding to the linear red quantum dots and the linear green quantum dots are identical and connected.

[0044] Based on the above embodiments, Figure 4 As shown, the DBR multilayer film in this embodiment includes a plurality of film layer groups, each of which includes a first film layer 304 and a second film layer 303, and the first film layer 304 is located below the second film layer 303;

[0045] The refractive index of the first film layer 304 is greater than a first preset threshold value and the extinction coefficient is less than a second preset threshold value;

[0046] The refractive index of the second film layer 303 is less than or equal to the first preset threshold and the extinction coefficient is less than the second preset threshold.

[0047] The DBR multilayer film structure is (LH)x, where H is the first film layer 304, which is a high refractive index and low extinction coefficient film layer; L is the second film layer 303, which is a low refractive index and low extinction coefficient film layer; and x is the number of film layer group periods.

[0048] Preferably, the high refractive index medium material is one of TiO2, ZnO and ZnS, and the low refractive index material is one of SiO2, Al2O3 and MgF2.

[0049] On the basis of the above-mentioned embodiment, in this embodiment, the period number x of each film layer group is greater than or equal to 5, and the optical thickness of each film layer is 120 nm±2.5 nm.

[0050] On the basis of the above-mentioned embodiment, in this embodiment, the isolation layer is made of a transparent material and has a refractive index less than a third preset threshold value, and the optical thickness of the isolation layer is greater than 6 um.

[0051] Based on the above embodiments, Figure 4 As shown, the phase change layer in this embodiment includes a phase change material 302 and a transparent electrode layer 301 located on both sides of the phase change material 302 .

[0052] The phase change material 302 may include the following chalcogenide compounds and alloys thereof, including but not limited to one of GST, GSST, IST, GeTe, SbTe, BiTe, InSb, InSe, GeSb, SbSe, GaSb, GaSb, GeSbTe, AgInSbTe, InSbTe, AgSbTe, Ag2In4Sb76Te17 (AIST). In addition, the atomic percentages in the above chemical formulas may be variable. The phase change material 302 may further include at least one dopant, such as C, N.

[0053] On the basis of the above embodiments, in this embodiment, under electrical stimulation or laser stimulation, the phase change material 302 switches between a crystalline state and an amorphous state, so that the transmittance of the phase change layer changes to perform light filtering.

[0054] The phase change material 302 of the phase change material layer can be converted between the crystalline state and the amorphous state under electrical stimulation or laser stimulation, so that the transmittance of the phase change layer changes. The two transparent electrode layers 301 sandwiching the phase change material 302 in the phase change layer can control the crystallization state of the phase change material 302 by applying voltage.

[0055] Specifically, a pulse current or laser pulse of medium intensity is applied to the phase change material 302. Under the action of the current or laser pulse, the temperature of the phase change material 302 rises to a temperature range above the crystallization temperature and below the melting temperature and is maintained for a certain period of time. At this time, the crystal lattice is orderly arranged to form a crystalline state, realizing the transition from amorphous to crystalline.

[0056] A short and strong current or laser pulse is applied to the phase change material 302, so that the temperature of the phase change material 302 is raised to above the melting temperature, so that the long-range order of the crystalline state is destroyed. The pulse falling edge is very short, so that the phase change material 302 is quickly cooled to below the crystallization temperature, so that the phase change material 302 is fixed in the amorphous state, and the transition from the crystalline state to the amorphous state is achieved.

[0057] This embodiment filters the complex light emitted by the multicolor quantum dot light-emitting component by the change in transmittance of the phase change material 302 of the phase change layer when it transforms between the amorphous state and the crystalline state, thereby obtaining monochromatic light of the required wavelength and intensity, thereby realizing color display.

[0058] When the phase change material 302 transforms between the crystalline state and the amorphous state, its refractive index n and extinction coefficient k also change.

[0059] The transmittance of the phase change layer in the RG cutoff filter structure varies greatly in different states. The phase change material 302 is stable in the crystalline and amorphous states, so the voltage or laser can be removed when the phase change material 302 is in a stable state, so the power consumption of the entire display device during the display process is very low.

[0060] The phase change material 302 switches between the crystalline state and the amorphous state very quickly, that is, the time required for a single pixel to change from dark to bright or from bright to dark is very short, about less than 100ns, which fully meets the requirements in various scenarios.

[0061] On the basis of the above embodiment, the phase change material 302 in this embodiment is Sb2Te3, and the thickness of the phase change material 302 is less than 100 nm.

[0062] At the same thickness, the transmittance change of Sb2Te3 before and after the phase change is the largest, and the phase change temperature of Sb2Te3 is low. The voltage or laser amplitude required for the transition is low and the pulse width is narrow, which is convenient for reducing the energy consumption of the entire device and improving the response speed of the phase change material 302.

[0063] The thickness of the phase change material 302 is less than 100nm. Since the increase in the thickness of the phase change material 302 will reduce the transmittance of visible light, and the temperature required for the crystallization of the phase change material 302 is also higher, the more suitable thickness is 30nm. The phase change material 302 of the phase change layer can be driven by laser or voltage. When driven by voltage, the transparent electrode layers 301 on both sides of the phase change material 302 apply voltage to cause the phase change material 302 to undergo phase change.

[0064] Based on the above embodiments, this embodiment also includes a crossbar control structure, which includes a plurality of first electrodes arranged in parallel and a plurality of second electrodes arranged in parallel, wherein the plurality of first electrodes and the plurality of second electrodes are perpendicular and intersecting to form a cross-point array, and each cross-point in the cross-point array is provided with a light modulation pixel unit.

[0065] The first electrode in the crossbar control structure can be a horizontal electrode, and the second electrode can be a vertical electrode. Multiple horizontal electrodes and multiple vertical electrodes form a crossbar array, and there is a light modulation pixel unit in the middle of each crossbar. Figure 5 shown.

[0066] On the basis of the above embodiments, the wavelength of the LED excitation light source in this embodiment is 450nm±10nm.

[0067] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An ultra-high-resolution phase-change display device based on a linear backlight source, characterized in that: include: A linear RGB backlight light-emitting component includes an LED excitation light source, a diffusion plate, and a linear quantum dot layer arranged in sequence from bottom to top; The linear quantum dot layer includes linear red quantum dots and linear green quantum dots in the same layer, the linear quantum dot layer covers one side of the diffusion plate, and the linear RGB backlight source light emitting component is used to emit RGB light; A pixelated phase-change filter structure is located on the linear RGB backlight light-emitting component, and the pixelated phase-change filter structure includes an RG cut-off filter structure, a B filter structure and a black photoresist; The RG cut-off filter structure is used to filter out blue light from the received light emitted by the linear red quantum dots and the linear green quantum dots, the B filter structure is used to retain blue light from the received light emitted by the diffusion plate, the black photoresist is used to block the light in the non-pixel area, and when the B filter structure is extended and covers the RG cut-off filter structure, the B filter structure filters the light to retain blue light, red light and green light, and the B filter structure includes an isolation layer and a phase change layer; The RG cut-off type filter structure includes a DBR multilayer film, an isolation layer and a phase change layer arranged in sequence from bottom to top; The DBR multilayer film structures corresponding to the linear red quantum dots and the linear green quantum dots are identical and connected.

2. The ultra-high resolution phase change display device based on a linear backlight source according to claim 1, characterized in that: The DBR multilayer film includes a plurality of film layer groups, each of which includes a first film layer and a second film layer, wherein the first film layer is located below the second film layer; The refractive index of the first film layer is greater than a first preset threshold value and the extinction coefficient is less than a second preset threshold value; The refractive index of the second film layer is less than or equal to the first preset threshold value, and the extinction coefficient is less than the second preset threshold value.

3. The ultra-high resolution phase change display device based on a linear backlight source according to claim 2, characterized in that: The number of periods of each film layer group is greater than or equal to 5, and the optical thickness of each film layer is 120nm±2.5nm.

4. The ultra-high resolution phase change display device based on a linear backlight source according to claim 1, characterized in that: The isolation layer is made of a transparent material and has a refractive index less than a third preset threshold value. The optical thickness of the isolation layer is greater than 6 um.

5. The ultra-high resolution phase change display device based on a linear backlight source according to claim 1, characterized in that: The phase change layer includes a phase change material and a transparent electrode layer located on both sides of the phase change material.

6. The ultra-high resolution phase change display device based on a linear backlight source according to claim 5, characterized in that: Under electrical stimulation or laser stimulation, the phase change material switches between a crystalline state and an amorphous state, so that the transmittance of the phase change layer changes to perform light filtering.

7. The ultra-high resolution phase change display device based on a linear backlight source according to claim 5, characterized in that: The phase change material is Sb2Te3, and the thickness of the phase change material is less than 100nm.

8. The ultra-high resolution phase change display device based on a linear backlight source according to any one of claims 1 to 7, characterized in that: It also includes a crossbar control structure, which includes a plurality of first electrodes arranged in parallel and a plurality of second electrodes arranged in parallel, wherein the plurality of first electrodes and the plurality of second electrodes are perpendicular and intersecting to form a cross-point array, and each cross-point in the cross-point array is provided with a light modulation pixel unit.

9. The ultra-high resolution phase change display device based on a linear backlight source according to any one of claims 1 to 7, characterized in that: The wavelength of the LED excitation light source is 450nm±10nm.

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