Conductive film, electrode sheet, energy storage device, electrical equipment, and method for preparing conductive film

Abstract

The present invention discloses a conductive film, an electrode sheet, an energy storage device, an electrical equipment and a method for preparing the conductive film. The conductive film includes a substrate layer and a conductive layer. Along a first direction, the substrate layer includes a first surface and a second surface; the conductive layer includes a first metal layer and a second metal layer. The first metal layer is disposed on the first surface, and the second metal layer is disposed on the second surface; wherein, at least one of the first metal layer and the second metal layer includes a first main layer and a second main layer. The first main layer is disposed on the surface of the substrate layer, and the second main layer is disposed on the surface of the first main layer away from the substrate layer. Impurity particles are embedded in the first main layer, and the impurity particles include particle structures made of materials different from those of the first metal layer and the second metal layer. The present invention solves the problem that mutual adhesion is likely to occur between the metal layers on both surfaces of the base film.

Description

Technical Field

[0001] The present application relates to the technical field of thin films, and more specifically, to a conductive film, a pole piece, an energy storage device, an electrical device, and a method for preparing a conductive film. Background Art

[0002] Currently, the preparation processes of composite current collector materials generally include the following methods:

[0003] 1) A metal layer such as a copper layer (Cu) is deposited on the surface of a polymer base film by means of vacuum magnetron sputtering or thermal evaporation to obtain a composite current collector in one step.

[0004] 2) A two-step forming method of vacuum magnetron sputtering or thermal evaporation + electroplating in water is adopted to deposit a copper layer on the surface of a polymer base film to obtain a composite current collector.

[0005] 3) A three-step forming method of magnetron sputtering coating + thermal evaporation coating + electroplating in water is adopted to deposit a copper layer on the surface of a polymer base film to obtain a composite current collector.

[0006] After the coating is completed, the obtained composite current collector needs to be wound in a roll-to-roll manner. In the wound film roll, the metal layers on both surfaces of the base film are prone to adhere to each other, resulting in adhesion failure of the film layer during the unwinding process and causing delamination defects, that is, local or sporadic peeling of the copper layer on the surface of the base film. Summary of the Invention

[0007] The main purpose of the present application is to provide a conductive film, a pole piece, an energy storage device, an electrical device, and a method for preparing a conductive film to solve the problem that the metal layers on both surfaces of the base film are prone to adhere to each other as mentioned in the background art.

[0008] According to one aspect of the present application, a conductive film is provided, including:

[0009] A substrate layer, along a first direction, the substrate layer includes a first surface and a second surface;

[0010] A conductive layer, the conductive layer includes a first metal layer and a second metal layer, the first metal layer is disposed on the first surface, and the second metal layer is disposed on the second surface;

[0011] Wherein, at least one of the first metal layer and the second metal layer includes a first main layer and a second main layer, the first main layer is disposed on the surface of the substrate layer, the second main layer is disposed on the surface of the first main layer away from the substrate layer, and impurity particles are embedded in the first main layer, and the impurity particles include a particle structure whose material is different from that of the first metal layer and the second metal layer.

[0012] Furthermore, the first main body layer includes:

[0013] a metal main body layer disposed on the surface of the substrate layer;

[0014] a mixed layer disposed on the surface of the metal main body layer close to the second main body layer, with the impurity particles embedded in the mixed layer. Along the first direction, the thickness of the mixed layer is greater than the thickness of the second main body layer.

[0015] Furthermore, the second main body layer includes a structural layer made of a metal material same as that of the metal main body layer. The mixed layer includes first metal particles and the impurity particles, and the first metal particles include particle structures made of a metal material same as or different from that of the metal main body layer.

[0016] Furthermore, along the first direction, the thickness of the mixed layer is not less than 10 nm and not greater than 80 nm.

[0017] Furthermore, along the first direction, the thickness of the second main body layer is not less than 0.1 nm and not greater than 30 nm.

[0018] Furthermore, the impurity particles include a particle structure with a melting point lower than the melting point of the first main body layer and / or the second main body layer.

[0019] Furthermore, the impurity particles include at least one of single-metal particles and alloy-metal particles.

[0020] Furthermore, the single-metal particles include at least one of magnesium particles, zinc particles, tin particles, lead particles, cadmium particles, magnesium particles, silver particles, nickel particles, cobalt particles, and chromium particles; and / or, the alloy-metal particles include at least one of zinc alloy particles, tin alloy particles, lead alloy particles, cadmium alloy particles, magnesium alloy particles, silver alloy particles, nickel alloy particles, cobalt alloy particles, and chromium alloy particles.

[0021] Furthermore, the impurity particles further include at least one of boron oxide particles, cadmium oxide particles, lead oxide particles, and antimony oxide particles.

[0022] Furthermore, the impurity particles include a particle structure with a melting point not higher than 800 °C.

[0023] Furthermore, the conductive layer further includes:

[0024] an adhesion-enhancing layer including at least two layers, with at least one adhesion-enhancing layer disposed between the first metal layer and the substrate layer, and / or at least one adhesion-enhancing layer disposed between the second metal layer and the substrate layer.

[0025] Further, along the first direction, the sum of the thickness of the first metal layer or the second metal layer and the thickness of the adhesion enhancement layer is not less than 35 nm and not greater than 120 nm.

[0026] Further, the conductive layer further includes:

[0027] A metal thickening layer, the metal thickening layer includes at least two layers, at least one metal thickening layer is disposed on the surface of the second main body layer away from the substrate layer, and at least one metal thickening layer is disposed on the surface of the second metal layer away from the substrate layer.

[0028] Further, the total mass of the elements in the coatings on both sides of the substrate layer along the first direction is a first value, the total mass of the elements in the impurity particles is a second value, and the percentage between the second value and the first value is between 0.015% and 3%.

[0029] Further, the total mass of the elements in the coatings on both sides of the substrate layer along the first direction is a first value, the total mass of the elements in the impurity particles is a second value, and the percentage between the second value and the first value is between 0.0015% and 0.35%.

[0030] Further, the first metal layer and the second metal layer include a copper layer or an aluminum layer; and / or,

[0031] The substrate layer includes at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenylene ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly(p-phenylenediamine terephthalate) layer, a polyoxymethylene layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer, and a cellulose layer.

[0032] According to another aspect of the present application, there is provided a pole piece, the pole piece includes a current collector, and the current collector includes the conductive film described above.

[0033] According to another aspect of the present application, there is provided an energy storage device, and the energy storage device includes the pole piece described above.

[0034] According to another aspect of the present application, there is provided an electrical device, and the electrical device includes the energy storage device described above.

[0035] According to another aspect of the present application, there is provided a method for preparing a conductive film, the method for preparing a conductive film is used to prepare the conductive film described above, and the method includes the following steps:

[0036] Step S1: During the process of preparing at least one of the first metal layer and the second metal layer on the surface of the substrate layer to form the first main layer, after depositing impurity particles into the first main layer, a second main layer is prepared on the surface of the first main layer.

[0037] Further, step S1 includes:

[0038] Step S11: Use a first preparation process to prepare a metal main layer of the first main layer on the surface of the substrate layer;

[0039] Step S12: Use a second preparation process to prepare the mixed layer of the first main layer on the surface of the metal main layer, and prepare the second main layer on the surface of the mixed layer. During the formation of the mixed layer, the impurity particles are deposited into the mixed layer.

[0040] Further, the second preparation process includes a thermal evaporation process, and step S12 includes:

[0041] In the first evaporation area of the evaporator of the first evaporation device, a plurality of first evaporation containers and a plurality of second evaporation containers are arranged alternately. In the second evaporation area adjacent to the first evaporation area, a plurality of the second evaporation containers are arranged. The first evaporation container is used to place the first target for preparing the impurity particles, and the second evaporation container is used to place the second target for preparing the second main layer;

[0042] During the process of performing the thermal evaporation process on the evaporator to thermally evaporate the first target and the second target, the conductive film is sequentially conveyed from the first evaporation area to the second evaporation area, so that the particles generated by thermal evaporation in the first evaporation area form the mixed layer on the surface of the metal main layer, and the particles generated by thermal evaporation in the second evaporation area form the second main layer on the surface of the mixed layer.

[0043] Further, before sequentially conveying the conductive film from the first evaporation area to the second evaporation area, the method further includes:

[0044] A third evaporation area is set on the evaporator. Along the second direction, the third evaporation area is located on the side of the first evaporation area away from the second evaporation area, and the second direction is parallel to the conveying direction of the conductive film;

[0045] A plurality of second evaporation containers for placing the second target are arranged in the third evaporation zone, and the plurality of second evaporation containers are arranged in at least one column along a third direction, so that before the conductive film is sequentially transferred from the first evaporation zone to the second evaporation zone, the conductive film first passes through the third evaporation zone, so that particles thermally evaporated from the third evaporation zone and the first evaporation zone form the mixed layer on the surface of the metal main body layer, and the third direction is perpendicular to the first direction and the second direction.

[0046] Further, both the first preparation process and the second preparation process include at least one of vacuum magnetron sputtering coating and thermal evaporation coating processes.

[0047] In the present application, the conductive layer of the conductive film includes a first metal layer and a second metal layer, and impurity particles are embedded in the first metal layer and / or the second metal layer. Since the impurity particles are specifically disposed in the first main body layer of the first metal layer and / or the second metal layer, during the process of depositing the first main body layer on the first surface of the substrate layer, since the impurity particles are embedded in the first main body layer, the impurity particles can refine the crystal grain structure in the first main body layer and have the effect of filling the pores of the first main body layer, enabling the first main body layer to have a higher density. Thus, depositing a second main body layer on the basis of the first main body layer with a higher density will also make the second main body layer have a higher density, making the crystal lattice structure of the second main body layer different from that of the first metal layer or the second metal layer on the substrate layer, so that the first metal layer and the second metal layer have different surface morphologies and contact adhesion characteristics, which can prevent mutual adhesion between the first metal layer and the second metal layer. When impurity particles are embedded in the first main body layer of the first metal layer and / or the second metal layer, the density of the second main body layer on the surfaces of the first metal layer and the second metal layer will become higher. The higher the density, the smoother and flatter the surface of at least one of the first metal layer and the second metal layer, and the less likely the first metal layer and the second metal layer are to adhere to each other. When the wound conductive film is unwound, the second main body layer or the second metal layer will not detach from the substrate layer, and there will be no delamination defect on the surface of the conductive film, improving the finished product quality of the conductive film. Secondly, since the impurity particles are covered by the second main body layer, when the conductive film is transferred to the electroplating process for electroplating thickening, the impurity particles will not be exposed to the electroplating solution. Therefore, before electroplating thickening the conductive film, there is no need to add a process for cleaning and removing the impurity particles, and it can also be ensured that the impurity particles will not contaminate the electroplating solution, improving the electroplating efficiency of the conductive film and the overall structural quality after electroplating thickening. Description of the Drawings

[0048] The accompanying drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0049] Figure 1 is a schematic structural diagram of the conductive film disclosed in the present invention;

[0050] Figure 2 is for Figure 1 the structural schematic diagram after electroplating and thickening the conductive film in

[0051] Figure 3 is a three-dimensional surface topography diagram of the conductive film without doped impurity particles in an embodiment of the present invention;

[0052] Figure 4 is Figure 3 the planar surface topography diagram of

[0053] Figure 5 is a three-dimensional surface topography diagram of the conductive film doped with impurity particles in an embodiment of the present invention;

[0054] Figure 6 is Figure 5 the planar surface topography diagram of

[0055] Figure 7 is a schematic structural diagram of the evaporator in the second embodiment of the present invention;

[0056] Figure 8 is a schematic structural diagram of the evaporator in the second embodiment of the present invention;

[0057] Figure 9 is a preparation flow chart of the first main layer 21 in the fifth embodiment of the present invention.

[0058] Among them, the above-mentioned accompanying drawings include the following reference numerals:

[0059] 10, substrate layer; 11, first surface; 12, second surface; 20, first metal layer; 21, first main layer; 211, metal main layer; 212, mixed layer; 22, second main layer; 30, second metal layer; 40, adhesion enhancement layer; 50, metal thickening layer; 60, evaporator; 61, first evaporation zone; 62, second evaporation zone; 63, third evaporation zone; 64, first evaporation container; 65, second evaporation container. Detailed Description of the Invention

[0060] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0061] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular forms are also intended to include the plural forms. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, they specify the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0062] Unless otherwise specifically stated, the relative arrangements, numerical expressions, and numerical values of the components and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for the sake of convenience of description, the dimensions of the various parts shown in the drawings are not drawn in actual proportional relationships. Technologies, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and devices should be regarded as part of the authorized specification. In all the examples shown and discussed herein, any specific value should be construed as merely exemplary and not as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numerals and letters denote like items in the following drawings, and thus, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0063] Currently, during the process of winding and unwinding the current collector, the metal layers on both sides of the base material layer 10 of the current collector will adhere to each other, and it is easy for the metal layer to peel off from the base material layer 10. The essence of this situation is that the interfacial bonding force F1 between the metal layer and the polymer base film is less than the bonding force F2 between the metal layers on both sides of the polymer base material after winding (such as between copper films), resulting in the phenomenon of film layer peeling. In response to this, to solve the problem that the metal layers on both sides of the surface of the base material layer 10 are prone to adhere to each other, although an isolation layer can be provided on one side of the conductive film along the first direction (the first direction is the thickness direction of the conductive film itself, as Figure 1 indicated by the arrow X in the figure) to isolate the metal layers on the opposite sides of the conductive film along the first direction through the isolation layer to achieve the anti-adhesion effect. However, in the subsequent electroplating and thickening process of the conductive film, since the isolation layer will be exposed to the electroplating solution, the impurities in the isolation layer will contaminate the electroplating solution. To prevent the isolation layer from bringing impurities to the electroplating solution and affecting the electroplating effect, a cleaning and removal process for removing the isolation layer needs to be added before the electroplating process. However, the isolation layer is not easy to be completely removed, and the equipment and processing costs brought by the cleaning and removal process will increase the production cost of the conductive film and reduce the production efficiency of the conductive film.

[0064] Therefore, to solve the above problems, the first embodiment of the present invention provides a conductive film, which includes a substrate layer 10 and a conductive layer. Please refer to Figure 1 and Figure 2 , along the first direction, the substrate layer 10 includes a first surface 11 and a second surface 12. The conductive layer includes a first metal layer 20 and a second metal layer 30. The first metal layer 20 is disposed on the first surface 11, and the second metal layer 30 is disposed on the second surface 12. Among them, at least one of the first metal layer 20 and the second metal layer 30 includes a first main layer 21 and a second main layer 22. The first main layer 21 is disposed on the surface of the substrate layer 10. For example, when the first metal layer 20 includes the first main layer 21, the first main layer 21 is disposed on the first surface 11; when the second metal layer 30 includes the first main layer 21, the first main layer 21 is disposed on the second surface 12. The second main layer 22 is disposed on the surface of the first main layer 21 away from the substrate layer 10, and impurity particles are embedded in the first main layer 21. The impurity particles include a particle structure (such as at least one of a metal particle and a non-metal particle) whose material is different from that of the first metal layer 20 and the second metal layer 30. For example, when both the first metal layer 20 and the second metal layer 30 include a copper layer, the impurity particles can be at least one of a metal particle and a non-metal particle different from metallic copper. As Figure 1 shown, in this embodiment, when depositing the first metal layer 20, during the process of forming the first main layer 21 of the first metal layer 20 on the first surface 11 of the substrate layer 10, the impurity particles can be deposited in the first main layer 21.

[0065] Since the first main body layer 21 is doped with impurity particles, the impurity particles can refine the crystal grain structure in the first main body layer 21 and fill the pores, thereby improving the density of the first main body layer 21. Thus, growing and forming the second main body layer 22 on the surface of the first main body layer 21 with a higher density will make the lattice structure of the second main body layer 22 different from that of the second metal layer 30, thereby avoiding the phenomenon of mutual adhesion or sticking between the second main body layer 22 and the second metal layer 30. Or, if no impurity particles are provided in the first metal layer 20, during the process of forming the first main body layer 21 of the second metal layer 30 on the second surface 12 of the substrate layer 10 when plating the second metal layer 30, the impurity particles can be deposited in the first main body layer 21 of the second metal layer 30. Since the first main body layer 21 is doped with impurity particles, the impurity particles can refine the crystal grain structure in the first main body layer 21 and fill the pores, thereby improving the density of the first main body layer 21 in the second metal layer 30. Thus, growing and forming the second main body layer 22 on the surface of the first main body layer 21 with a higher density will make the lattice structure of the second main body layer 22 different from that of the first metal layer 20, thereby avoiding the phenomenon of mutual adhesion or sticking between the second main body layer 22 and the first metal layer 20. When impurity particles are provided in both the first metal layer 20 and the second metal layer 30, since the densities of the first metal layer 20 and the second metal layer 30 will become higher, the higher the density, the smoother and flatter the surfaces of the first metal layer 20 and the second metal layer 20 are, and the less likely the first metal layer 20 and the second metal layer 30 are to adhere to each other. This is because it is easy to form a rivet-embedded structure and adhere together between two metal layers with rougher surfaces, while it is not easy to form a rivet-embedded structure between two metal layers after the surfaces are smoother and flatter, thereby achieving the anti-adhesion effect. Moreover, if only impurity particles are embedded in the first metal layer 20 or the second metal layer 30 in this embodiment, not only can the relative two sides of the conductive film be prevented from adhering to each other, but also the conductive performance of the conductive film can be improved because fewer impurity particles are introduced.

[0066] Therefore, since the second metal layer 30 can be deposited by the same coating method, such as evaporation coating, or can be deposited by different coating methods, such as magnetron sputtering + evaporation coating, during this process, as the second metal layer 30 thickens, the pores in the second metal layer 30 will increase. The first metal layer 20 and / or the second metal layer 30 are obtained by depositing a second main layer 22 on the first main layer 21 embedded with impurity particles. The second main layer 22 grows on the basis of the first main layer 21 with a higher density, which can reduce the generation of hole defects in the second main layer 22. For example, when only the first main layer 21 of the first metal layer 20 is embedded with impurity particles, the surface of the second main layer 22 can be made relatively smoother and flatter than the surface of the second metal layer 30, and it is difficult to form a rivet-like interlocking structure between the second main layer 22 and the second metal layer 30 and adhere them together. When impurity particles are embedded in both the first main layer 21 of the first metal layer 20 and the second metal layer 30, the density of the second main layer 22 on the surfaces of the first metal layer 20 and the second metal layer 30 will become higher. The higher the density, the smoother and flatter the surfaces of the first metal layer 20 and the second metal layer 30, and the less likely the first metal layer 20 and the second metal layer 30 are to adhere to each other. During the process of unwinding the conductive film, the second main layer 22 and the second metal layer 30 do not adhere to each other. Therefore, not only is it easy to pull and unwind the conductive film, but also delamination defects will not appear on the surface of the conductive film. Moreover, since the impurity particles are covered by the second main layer 22, during subsequent electroplating processes, the impurity particles will not be exposed to the electroplating solution, thus avoiding the contamination of the electroplating solution by the impurity particles due to the presence of the impurity particles, and improving the electroplating effect of the conductive film. There is also no need to add an additional cleaning process for removing impurity particles before the electroplating process, reducing the production cost of the conductive film and improving the production efficiency.

[0067] Please refer to Figures 3 to 6 , as follows through Figure 3 and Figure 4 are the surface morphologies of the conductive layer of the conductive film without doped impurity particles. It can be clearly seen that the surface of the conductive film is relatively rough. The root mean square roughness Rq of the surface of the conductive film = 3.67 nm, the arithmetic mean deviation of the profile Ra = 2.9 nm, and the maximum height difference = 26.5 nm. The maximum height difference in this embodiment is the height difference between the lowest point of the concave part and the highest point of the convex part on the surface of the conductive film.

[0068] Figure 5 and Figure 6 are the surface morphologies of the conductive film after the conductive layer of the conductive film is doped with impurity particles. The surface roughness Rq of the conductive film = 2.6 nm, Ra = 2.06 nm, and the maximum height difference = 18.5 nm.

[0069] It can be seen that Figure 3 ,Figure 4 The surface topography of the conductive film in Figure 5 and Figure 6 Compared with the surface topography of the conductive film in, the surface particles of the conductive film before doping with impurity particles are relatively large, the overall film surface is relatively rough, the density is relatively low, and there are more pores. If both sides of the conductive film are film layers with such topography, it is easier to produce film layer chimeric adhesion after winding contact in a vacuum environment. On the contrary, the film surface particles of the conductive film after doping with impurity particles are relatively fine, and the overall film surface is relatively flat. That is, if at least one side of the film surface of the conductive film is very flat, there will be no quality problems such as film layer chimerism and film layer peeling during film pulling after winding contact of different film layers.

[0070] Among them, since the measurement standards of surface roughness include the arithmetic mean deviation of the profile Ra (that is, the arithmetic mean of the absolute values of the distances between the points on the profile line along the measurement direction and the reference line within the sampling length), the maximum height of the profile Rz (which refers to the sum of the average values of the 5 largest profile peak heights and the average values of the 5 largest profile valley depths within the sampling length), the maximum height of the profile Ry (the distance between the highest peak line and the lowest valley bottom line of the profile within the sampling length), and the root mean square roughness Rq. The root mean square roughness Rq is the root mean square value of the profile deviation from the average line within the sampling length, and it is the root mean square (rms) parameter corresponding to Ra. The surface roughness mentioned in this embodiment can be the roughness value of the root mean square roughness Rq detected by an atomic force microscope. Of course, this embodiment can also use the roughness values measured by the measurement methods of the arithmetic mean deviation of the profile Ra, the maximum height of the profile Rz, or the maximum height of the profile Ry to measure the surface roughness of the conductive film 10.

[0071] It can be seen that in this embodiment, the conductive layer of the conductive film includes a first metal layer 20 and a second metal layer 30, and impurity particles are embedded in the first metal layer 20. Since the impurity particles are specifically disposed in the first main layer 21 of the first metal layer 20, during the process of depositing and forming the first main layer 21 on the first surface 11 of the substrate layer 10, because the impurity particles are embedded in the first main layer 21, the impurity particles can refine the crystal grain structure in the first main layer 21 and have the effect of filling the pores of the first main layer 21, enabling the first main layer 21 to have a higher density. Thus, further depositing and forming the second main layer 22 on the basis of the first main layer 21 with a higher density will also make the second main layer 22 have a higher density, making the crystal lattice structure of the second main layer 22 different from the crystal lattice structure of the first metal layer 20 or the second metal layer 30 on the second surface 12 of the substrate layer 10, so that the first metal layer 20 and the second metal layer 30 have different surface morphologies and contact adhesion characteristics, which can prevent the second main layer 22 from adhering to the second metal layer 30. When the wound conductive film is unwound, the second main layer 22 or the second metal layer 30 will not detach from the substrate layer 10, and no delamination defect will appear on the surface of the conductive film, improving the finished product quality of the conductive film. Secondly, since the impurity particles are covered by the second main layer 22, when the conductive film is conveyed to the electroplating process for electroplating and thickening, the impurity particles will not be exposed to the electroplating solution. Therefore, before electroplating and thickening the conductive film, there is no need to add a process for cleaning and removing the impurity particles, and it can also be ensured that the impurity particles will not contaminate the electroplating solution, improving the electroplating efficiency of the conductive film and the overall structural quality after electroplating and thickening.

[0072] Among them, the first main body layer 21 in this embodiment includes a metal main body layer 211 and a mixed layer 212. The metal main body layer 211 is disposed on the surface of the substrate layer 10, the mixed layer 212 is disposed on the surface of the metal main body layer 211 close to the second main body layer 22, and impurity particles are embedded in the mixed layer 212. Along the first direction, the thickness of the mixed layer 212 is greater than the thickness of the second main body layer 22 and / or less than the thickness of the metal main body layer 211. When the first main body layer 21 in this embodiment includes the metal main body layer 211 and the mixed layer 212, first of all, the first main body layer 21 is not formed by one-time deposition. After the metal main body layer 211 is deposited on the substrate layer 10, the mixed layer 212 is formed on the surface of the metal main body layer 211. The two-time deposition of the first main body layer 21 can further reduce the generation of pore defects in the first main body layer 21. The metal main body layer 211 can be deposited once or multiple times. Similarly, the second metal layer 30 can also be deposited once or multiple times. For one-time deposition, the evaporation coating method is directly used. If multiple depositions are performed, the magnetron sputtering and evaporation coating methods can be used successively for deposition. At the same time, since impurity particles are embedded in the mixed layer 212, the impurity particles will refine the crystal grain structure in the mixed layer 212, making the mixed layer 212 more dense. The higher the density of the mixed layer 212, the smoother and flatter the surface of the first main body layer 21. When the second main body layer 22 is deposited on the mixed layer 212, the density of the second main body layer 22 will also be higher, achieving the purpose of different surface structures between the second main body layer 22 and the second metal layer 30, thereby preventing the phenomenon of mutual adhesion between the second main body layer 22 and the second metal layer 30. Moreover, since the thickness of the mixed layer 212 is greater than the thickness of the second main body layer 22, that is, the thickness of the second main body layer 22 is relatively thin compared to the mixed layer 212, the influence of the mixed layer 212 on the lattice structure of the second main body layer 22 will be more significant, making the surface quality of the second main body layer 22 different from the surface quality of the second metal layer 30, so that the probability of mutual adhesion between the second main body layer 22 and the second metal layer 30 is smaller. In addition, when the thickness of the mixed layer 212 is less than the thickness of the metal main body layer 211, the first metal layer 20 can ensure that the conductivity of the conductive film meets the use requirements through the metal main body layer 211 and the second main body layer 22. When the metal main body layer 211 is obtained by magnetron sputtering and the mixed layer 212 is obtained by thermal evaporation coating, the thickness of the metal main body layer 211 can also be less than the thickness of the mixed layer 212. However, regardless of whether the thickness of the mixed layer 212 is greater than the metal main body layer 211, it can prevent the phenomenon of mutual adhesion between the second main body layer 22 and the second metal layer 30.

[0073] The second main body layer 22 in this embodiment includes a structural layer made of the same metal material as that of the metal main body layer 211. For example, when the metal main body layer 211 includes a copper layer, the second main body layer 22 also includes a copper layer. Thus, the difficulty in material selection for the metal main body layer 211 and the second main body layer 22 can be reduced. By selecting the metal main body layer 211 and the second main body layer 22 made of the same material, when depositing the first metal layer 20, the relatively complex deposition conditions caused by the different materials of the two can be avoided, thereby reducing the production difficulty and production cost of the metal main body layer 211 and the second main body layer 22. The mixed layer 212 includes first metal particles and impurity particles, and the first metal particles include particulate structures made of the same or different metal materials as that of the metal main body layer 211. For example, when the metal main body layer 211 and the second main body layer 22 include a copper layer, the first metal particles may include copper particles. Or, the first metal particles include metal particles other than copper particles, such as at least one of aluminum particles, silver particles, gold particles, platinum particles, etc. Among them, when the first metal particles include particulate structures made of different metal materials from that of the metal main body layer 211, the first metal particles are preferably at least one of silver particles, gold particles, platinum particles, etc.

[0074] Among them, when the first metal particles in the mixed layer 212 are preferably silver particles, after the silver particles and the impurity particles are mixed to form the mixed layer 212 on the surface of the first main body layer 21, the silver particles can improve the conductivity of the mixed layer 212, and thus improve the conductivity of the conductive film. Moreover, the target material raw material price of the silver particles is moderate and suitable for wide promotion and application. At the same time, the silver particles can also improve the adhesion and durability between the second main body layer 22 and the first main body layer 21, thereby further enhancing the structural stability of the conductive film.

[0075] When the first metal particles in the mixed layer 212 are preferably gold particles, the conductivity and optical properties of the conductive film of the mixed layer 212 can be improved, and the conductive film is more stable in terms of antioxidant and corrosion resistance. When the first metal particles in the mixed layer 212 are preferably platinum particles, compared with other precious metals, platinum has more stable chemical properties and better corrosion resistance, thereby improving the structural stability of the conductive film. Moreover, when the impurity particles include silver particles, if the platinum metal element in the platinum particles forms an alloy structure with the silver metal element in the silver particles, the mixed layer 212 will have higher stability and durability.

[0076] In this embodiment, along the first direction, the thickness of the hybrid layer 212 is not less than 10 nm and not greater than 80 nm. The hybrid layer 212 within this thickness range can not only change the lattice structure of the second main layer 22 to prevent the second main layer 22 from easily adhering to the second metal layer 30, but also avoid the negative impact on the conductivity of the conductive film due to the excessive thickness of the hybrid layer 212. Specifically, the thickness of the hybrid layer 212 in this embodiment may include, for example, one of 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, 22 nm, 24 nm, 25 nm, 27 nm, 28 nm, 30 nm, 31 nm, 32 nm, 34 nm, 36 nm, 38 nm, 40 nm, 42 nm, 45 nm, 47 nm, 49 nm, 50 nm, 52 nm, 54 nm, 55 nm, 57 nm, 59 nm, 60 nm, 61 nm, 63 nm, 65 nm, 68 nm, 70 nm, 72 nm, 73 nm, 75 nm, 77 nm, 78 nm, 80 nm, etc.

[0077] Along the first direction, the thickness of the second main body layer 22 in this embodiment is not less than 0.1 nm and not greater than 30 nm. When the thickness of the second main body layer 22 is greater than this range, the structure of the second main body layer 22 will be closer to that of the second metal layer 30, which will reduce the anti-sticking effect. When the thickness of the second main body layer 22 is less than this range, it is difficult to completely cover the mixed layer 212, and thus impurities may be introduced into the electroplating solution during the subsequent electroplating process of thickening the conductive film, reducing the electroplating effect. Therefore, when the thickness of the second main body layer 22 in this embodiment is not less than 0.1 nm and not greater than 30 nm, the lattice structure in the second main body layer 22 will not only be affected by the physical properties of the mixed layer 212 (such as fewer pore defects and lower surface roughness) and be significantly different from the lattice structure of the second metal layer 30, making it difficult for the second main body layer 22 and the second metal layer 30 to adhere to each other, but also ensure that the impurity particles in the mixed layer 212 will not be exposed to the electroplating solution to contaminate the electroplating solution. Specifically, the thickness of the second main body layer 22 in this embodiment may include one of 0.1 nm, 0.2 nm, 0.3 nm, 0.5 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, 1.1 nm, 1.3 nm, 1.5 nm, 1.8 nm, 2 nm, 2.3 nm, 2.5 nm, 2.7 nm, 2.9 nm, 3 nm, 3.2 nm, 3.5 nm, 3.8 nm, 4 nm, 4.2 nm, 4.5 nm, 4.8 nm, 5 nm, 5.3 nm, 5.6 nm, 5.8 nm, 6 nm, 6.2 nm, 6.5 nm, 6.7 nm, 7 nm, 7.1 nm, 7.4 nm, 7.6 nm, 7.8 nm, 8 nm, 8.3 nm, 8.5 nm, 8.8 nm, 9 nm, 9.3 nm, 9.5 nm, 9.8 nm, 10 nm, 10.2 nm, 10.5 nm, 10.8 nm, 11 nm, 11.3 nm, 11.5 nm, 11.8 nm, 12 nm, 13 nm, 14 nm, 15 nm, 17 nm, 18 nm, 19 nm, 20 nm, 21 nm, 22 nm, 23 nm, 24 nm, 25 nm, 26 nm, 27 nm, 28 nm, 29 nm, 30 nm, etc.Of course, the thickness of the second main body layer 22 in this embodiment is not limited to the values listed above. It should be noted that in this embodiment, whether it is the thickness of the second main body layer 22, the thickness of the mixed layer 212, or the limitation of the film layer thickness on the conductive film, all data ranges, in addition to including the endpoint values and integers, also include the values between the two adjacent integers listed. For example, for the thickness of the second main body layer 22, in addition to including one of 12 nm and 13 nm listed above, it may also include 12.1 nm, 12.2 nm, 12.3 nm, 12.4 nm, 12.5 nm, 12.6 nm, 12.7 nm, 12.8 nm, 12.9 nm, etc. between 12 nm and 13 nm. In this regard, as long as it is other numerical values under the concept of the present invention, they are all within the protection scope of the present invention. In the preferred embodiment of the present invention, the thicknesses of the mixed layer 212 and the second main body layer 22 can be smaller. The main purpose is that the overly thick mixed layer 212 will not affect the conductivity, and the overly thick second main body layer 22 will not offset the dense and flat surface microtopography features induced by the mixed layer 212.

[0078] The impurity particles in this embodiment preferably have a particle structure with a melting point lower than that of the first main body layer 21 and / or the second main body layer 22. Thus, when depositing the mixed layer 212 of the first main body layer 21 by thermal evaporation coating, the heat generated by thermally evaporating the target of the first metal particles in the mixed layer 212 through thermal evaporation coating can be used to heat and evaporate the target of the impurity particles. Therefore, the evaporation deposition of the impurity particles can be realized without adding an evaporation source, reducing the energy consumption generated in the preparation process of the conductive film and efficiently and energy-savingly realizing the deposition of the mixed layer 212. At the same time, due to the low melting point of the impurity particles, the target of the impurity particles can be quickly melted and evaporated or sputtered into the mixed layer 212 of the first main body layer 21, and the impurity particles are also convenient for quick condensation to deposit and fix in the mixed layer 212, thereby reducing the preparation time of the conductive film in this embodiment to a certain extent and improving the production efficiency of the conductive film in this embodiment.

[0079] When the impurity particles include metal particles with a melting point lower than that of the first main body layer 21 and the second main body layer 22, the impurity particles in this embodiment may specifically include at least one of elemental metal particles and alloy metal particles. Preferably, the elemental metal particles include at least one of magnesium particles, zinc particles, tin particles, lead particles, cadmium particles, magnesium particles, silver particles, nickel particles, cobalt particles, and chromium particles.

[0080] The alloy metal particles include at least one of zinc alloy particles, tin alloy particles, lead alloy particles, cadmium alloy particles, magnesium alloy particles, silver alloy particles, nickel alloy particles, cobalt alloy particles, and chromium alloy particles. Among them, the zinc alloy particles may include at least one of zinc-aluminum alloy particles, zinc-copper alloy particles, zinc-magnesium alloy particles, etc. The tin alloy particles include at least one of tin-zinc alloy tin alloy particles, tin-silver alloy tin alloy particles, tin-lead alloy tin alloy particles, etc. The lead alloy particles include at least one of lead-bismuth alloy particles, lead-magnesium alloy particles, lead-zinc alloy particles, lead-antimony alloy particles, lead-copper alloy particles, lead-aluminum alloy particles, etc. The cadmium alloy particles include at least one of cadmium-aluminum alloy particles, cadmium-copper alloy particles, cadmium-iron alloy particles, cadmium-silver alloy particles, cadmium-tin alloy particles, cadmium-zinc alloy particles, etc. The silver alloy particles include at least one of silver-copper alloy particles, silver-magnesium alloy particles, silver-nickel alloy particles, silver-tungsten alloy particles, silver-iron alloy particles, and silver-cerium alloy particles, etc. The nickel alloy particles include at least one of nickel-copper alloy particles, nickel-cobalt alloy particles, nickel-iron alloy particles, nickel-chromium alloy particles, nickel-molybdenum alloy particles, nickel-tungsten alloy particles, nickel-manganese alloy particles, nickel-aluminum alloy particles, nickel-silicon alloy particles, nickel-beryllium alloy particles, nickel-titanium alloy particles, nickel-zirconium alloy particles, nickel-hafnium alloy particles, nickel-vanadium alloy particles, nickel-niobium alloy particles, and nickel-tantalum alloy particles. The cobalt alloy particles include at least one of platinum-cobalt alloy particles, samarium-cobalt alloy particles, zirconium-cobalt alloy particles, tungsten-cobalt alloy particles, etc. The chromium alloy particles include at least one of chromium-iron alloy particles, chromium-nickel alloy particles, chromium-molybdenum alloy particles, etc. The magnesium alloy particles include at least one of magnesium-aluminum alloy particles, magnesium-zinc alloy particles, magnesium-manganese alloy particles, magnesium-cerium alloy, magnesium-thorium alloy, etc. In view of materials under different evaporation temperature conditions, the required evaporation can be achieved by setting or regulating the temperature at different evaporation materials, that is, local temperature control.

[0081] In this embodiment, for elemental metal particles, zinc particles and tin particles are preferred. When zinc particles are preferred as impurity particles, since zinc (Zn) can achieve efficient sputtering deposition in magnetron sputtering because it has a good sputtering response to argon ions and a high sputtering rate, it can be deposited in the first main layer 21 relatively quickly. In the magnetron sputtering method, zinc in the first metal layer 20 usually has excellent density and purity, and good film-forming uniformity, which is beneficial to improving the conductivity, mechanical properties, and chemical stability of the conductive film. The melting point of zinc is relatively low (419.5 °C), and it has good evaporation performance under suitable evaporation conditions. It can be quickly converted into vapor and deposited as a thin film after condensation, and the heat generated by evaporating the target material (such as a copper target) of the first main layer 21 and / or the second main layer 22 can be used to fully evaporate the zinc particle target, reducing the energy consumption in the preparation process of the conductive film. It can be seen that whether it is magnetron sputtering or evaporation process, zinc shows good deposition performance and application prospects, especially in new energy batteries, thin film electronic devices, optical coatings, and anti-corrosion coatings, etc., with significant advantages.

[0082] When the impurity particles are preferably tin particles, since the sputtering rate of tin (Sn) is relatively fast compared to some high-melting-point metals, a uniform thin film layer can be formed within a reasonable sputtering time. Moreover, since the melting point of tin is relatively low (about 232 °C), the heat generated during the evaporation of the target materials (such as copper target materials) of the first main layer 21 and / or the second main layer 22 can be used to evaporate the target material of the tin particles, thereby reducing the energy consumption of the coating equipment. Also, the heat generated during the magnetron sputtering process does not cause excessive thermal load on many sensitive substrates, allowing the thin film deposition to be completed at a lower temperature and reducing the potential damage to the substrate layer 10. Magnetron sputtering can precisely control the chemical composition of the tin thin film. Tin (Sn) has strong evaporation performance at an appropriate temperature, and can form a continuous and uniform vapor flow to deposit a continuous and thickness-controllable thin film. In short, whether it is magnetron sputtering or evaporation, as a soft metal, tin is convenient to deposit in the first main layer 21 due to its good deposition performance, thin film quality and process controllability when preparing thin film materials.

[0083] When the impurity particles in this embodiment are non-metal particles, the impurity particles may further include at least one of boron oxide particles, cadmium oxide particles, lead oxide particles, and antimony oxide particles. Of course, the impurity particles in this embodiment are preferably boron oxide particles with a melting point lower than that of the first main layer 21 and the second main layer 22. Boron oxide has strong thermal stability, and the vapor pressure of boron oxide can increase significantly with the increase of temperature, which is beneficial to form a stable vapor flow during vacuum evaporation or magnetron sputtering. During the evaporation or magnetron sputtering process, boron oxide can maintain a high purity, and the vacuum environment reduces the chance of boron oxide reacting with impurities in the air, helping to generate pure and uniform borate particles. In addition, the melting point of boron oxide is relatively low (about 450 °C) and it is easy to evaporate under appropriate heating conditions. In this regard, this embodiment can utilize the waste heat generated during the heating and evaporation of the target materials of the first main layer 21 and / or the second main layer 22 to achieve the evaporation coating of the target material of the boron oxide particles, reducing the energy consumption generated by the existing coating equipment. Moreover, the high volatility of boron oxide means that a high vapor pressure can be obtained at a lower evaporation temperature, which is beneficial to further reduce the energy consumption during the evaporation process and reduce the thermal stress on the substrate layer 10 and the coating equipment. In addition, the low melting point is also beneficial to the alternate evaporation with other high-melting-point materials during the preparation of the multi-layer structure, avoiding the increase in process complexity caused by excessive temperature difference.

[0084] The impurity particles in this embodiment preferably have a particle structure with a melting point not higher than 800 °C. For example, the impurity particles specifically include particle structures with melting points of 800 °C, 700 °C, 600 °C, 500 °C, 400 °C, 450 °C, 300 °C, 200 °C, 100 °C, etc. Since the melting points of the first main layer 21 and the second main layer 22 are relatively higher than those of the impurity particles, when heating and evaporating the target materials of the first main layer 21 and / or the second main layer 22 using existing coating equipment (such as an evaporation coating equipment), the temperature generated is often relatively high. For example, when both the first main layer 21 and the second main layer 22 are copper layers with melting points higher than those of the impurity particles, the temperature required to heat the copper layer and achieve an effective evaporation efficiency is at least above 1100 °C. Therefore, when using the heat generated by heating and evaporating the first main layer 21 and the second main layer 22 to heat and evaporate the target material of the impurity particles, it can ensure that the target material of the impurity particles can be heated and evaporated more fully, reduce energy consumption, and enable the target material of the impurity particles to quickly melt and be deposited in the first main layer 21. That is, impurity particles with a melting point not higher than 800 °C are more convenient for quickly condensing and depositing in the first main layer 21, improving the production efficiency of the conductive film.

[0085] The conductive layer in this embodiment further includes an adhesion enhancement layer 40. The adhesion enhancement layer 40 includes at least two layers. At least one adhesion enhancement layer 40 is disposed between the first metal layer 20 and the substrate layer 10, and at least one adhesion enhancement layer 40 is disposed between the second metal layer 30 and the substrate layer 10. The adhesion enhancement layer 40 can improve the adhesion of the first metal layer 20 and the second metal layer 30 to the substrate layer 10, that is, enhance the interfacial bonding force F1 between the metal layer and the substrate layer 10, so that the interfacial bonding force F1 between the metal layer and the substrate layer 10 is greater than the bonding force F2 between the second main layer 22 and the second metal layer 30, avoiding one side of the film layer of the conductive film being pulled off by the other side, and further reducing the probability of adhesion between the second main layer 22 and the second metal layer 30.

[0086] The adhesion enhancement layer 40 in this embodiment may include any one of a nickel metal layer, a chromium metal layer, a titanium metal layer, a copper alloy layer, a nickel alloy layer, a chromium alloy layer, a titanium alloy layer, an aluminum alloy layer, an aluminum oxide layer, a silicon nitride layer, a silicon carbide layer, a polyethylene glycol layer, etc.

[0087] In this embodiment, along the first direction, the sum of the thickness of the first metal layer 20 or the second metal layer 30 and the thickness of the adhesion enhancement layer 40 is not less than 35 nm and not greater than 120 nm. When impurity particles are provided only in the first metal layer 20, the sum of the thickness of the first metal layer 20 and the thickness of the adhesion enhancement layer 40 is not less than 35 nm and not greater than 120 nm. When impurity particles are provided only in the second metal layer 30, the sum of the thickness of the second metal layer 30 and the thickness of the adhesion enhancement layer 40 is not less than 35 nm and not greater than 120 nm. In this thickness range, since a mixed layer 212 and a second main layer 22 covering the surface of the mixed layer 212 are provided in the first metal layer 20 and / or the second metal layer 30, the composition of the mixed layer 212 is different from that of the metal main layer 211 and the second main layer 22 of the first metal layer 20. That is, by adding the mixed layer 212 to the first metal layer 20, the film layer structure of the second main layer 22 on the outermost surface of the first metal layer 20 is made different from the film layer structure of the second metal layer 30, so that it is not easy for the second main layer 22 and the second metal layer 30 to adhere to each other. Moreover, in the subsequent electroplating process, when electroplating and thickening the surface of the second main layer 22 of the conductive film and the second metal layer 30 to obtain a metal thickening layer 50, since the impurity particles in the mixed layer 212 are not exposed to the electroplating solution, this will bring more positive effects to the preparation of the final conductive film product. For example, since the electroplating solution is not contaminated by impurity particles, the electroplating efficiency is higher and the electroplating effect is better. The sum of the thickness of the first metal layer 20 and the thickness of the adhesion enhancement layer 40 may specifically include one of 35 nm, 36 nm, 37 nm, 38 nm, 39 nm, 40 nm, 42 nm, 43 nm, 46 nm, 48 nm, 50 nm, 52 nm, 53 nm, 54 nm, 56 nm, 58 nm, 60 nm, 61 nm, 63 nm, 65 nm, 67 nm, 70 nm, 72 nm, 74 nm, 76 nm, 78 nm, 80 nm, 82 nm, 84 nm, 85 nm, 87 nm, 89 nm, 90 nm, 91 nm, 94 nm, 96 nm, 98 nm, 100 nm, 102 nm, 105 nm, 107 nm, 108 nm, 110 nm, 111 nm, 113 nm, 115 nm, 116 nm, 117 nm, 118 nm, 120 nm, etc.

[0088] After electroplating and thickening the conductive film, as Figure 2 shown, the conductive layer in this embodiment further includes a metal thickening layer 50. The metal thickening layer 50 includes at least two layers. At least one metal thickening layer 50 is provided on the surface of the second main layer 22 away from the substrate layer 10, and at least one metal thickening layer 50 is provided on the surface of the second metal layer 30 away from the substrate layer 10, so that the thickness of the conductive film meets the use requirements.

[0089] Further, the total mass of the elements in the coatings on both sides of the substrate layer 10 along the first direction is a first value, the total mass of the elements in the impurity particles is a second value, and the percentage between the second value and the first value is between 0.015% and 3%. The percentage between the second value and the first value can be obtained by testing the conductive film using an ICP instrument (full name: ICP-AES inductively coupled atomic emission spectrometer, which is a large-scale precision inorganic analytical instrument used for qualitative and quantitative analysis of inorganic elements). When the percentage between the second value and the first value in this embodiment is between 0.015% and 3%, it is mainly for a conductive film product obtained before the conductive film is thickened by electroplating, that is, when the conductive layer of the conductive film includes a first metal layer 20, a second metal layer 30 and an adhesion enhancing layer 40, if the first metal layer 20 and the second metal layer 30 both include copper layers, the total mass of the cylinders of the impurity particles in the conductive layer is the second value, and the mass of the element in the first metal layer 20 (such as the metal main layer 211 and the second main layer 22 of the first metal layer 20 both include copper layers, and the mixed layer 212 is a film layer structure in which zinc particles are embedded in the copper layer, the mass of the copper element in the metal main layer 211 + the mass of the copper element in the mixed layer 212 + the mass of the zinc element in the mixed layer 212 + the mass of the copper element in the second main layer 22) + the mass of the copper element in the second metal layer 30 + the mass of the element in the adhesion enhancing layer 40 = the first value. When the percentage between the second value and the first value is between 0.015% and 3%, the conductive film can prevent the second main layer 22 and the second metal layer 30 from sticking together through the embedded impurity particles. Moreover, the conductive film will not be adversely affected by excessive impurity particles on its own conductive properties, nor will it fail to achieve the anti-sticking effect due to too few impurity particles. The percentage between the second value and the first value may specifically include 0.015%, 0.018%, 0.02%, 0.023%, 0.025%, 0.027%, 0.028%, 0.03%, 0.04%, 0.06%, 0.08%, 0.1%, 0.15%, 0.2%, 0.3%, 0.4%, 0.5%, 0.8%, 1%, 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.8%, 2%, 2.3%, 2.5%, 2.8%, 3% and the like.

[0090] After a metal thickening layer 50 is provided on the conductive film in this embodiment, if the total mass of the elements in the coatings on both sides of the substrate layer 10 along the first direction is a first value, and the total mass of the elements in the impurity particles is a second value, the percentage between the second value and the first value is between 0.0015% and 0.35%. At this time, the first value mainly includes the element mass in the first metal layer 20 + the copper element mass in the second metal layer 30 + the element mass in the adhesion enhancement layer 40 + the element mass in the metal thickening layer 50 (when the metal thickening layer 50 includes a copper layer, that is, the mass of the copper element). That is, in the finished conductive film, the percentage between the second value and the first value in this embodiment is between 0.0015% and 0.35%. Here, the percentage between the second value and the first value in this embodiment may specifically include 0.0015%, 0.0018%, 0.002%, 0.0023%, 0.0025%, 0.0028%, 0.003%, 0.005%, 0.007%, 0.008%, 0.01%, 0.02%, 0.03%, 0.04%, 0.06%, 0.08%, 0.1%, 0.12%, 0.15%, 0.2%, 0.24%, 0.27%, 0.3%, 0.31%, 0.34%, 0.35%, etc.

[0091] In short, the above mass percentage content refers to the proportion of the doped elements in the total mass of all the coating elements. The so-called elements generally refer to metal elements or the mass of equivalent elements as described above regarded as metal elements.

[0092] Specifically, in this embodiment, ICP is used to detect the coatings on both sides of the substrate layer 10 including impurity particles to obtain the content of the impurity particle elements in the overall coating. The percentage obtained by the test is the mass ratio of metal elements or equivalent metal elements. For example, when the doped impurity particles in special cases are impurity particles such as boron oxide particles and cadmium oxide particles, the mass of boron element is equivalently measured and the mass of cadmium element is equivalently measured.

[0093] Specifically, when this embodiment uses ICP to detect the first value and the second value, it specifically examines the metal elements in the conductive film. When the impurity particles include boron oxide particles, the detected second value is the total mass of boron element. At this time, the first value includes not only the total mass of the metal elements in the first metal layer 20, the second metal layer 30, and the adhesion enhancement layer 40, but also the total mass of boron element.

[0094] In this embodiment, when the impurity particles include metal oxide particles, such as at least one of lead oxide particles, antimony oxide particles, cadmium oxide particles (CdO), etc., at this time, the first value includes not only the total mass of the metal elements in the first metal layer 20, the second metal layer 30, and the adhesion enhancing layer 40, but also the total mass of the metal elements in the metal oxide particles (such as the total mass of cadmium elements), while the second value is specifically the total mass of the metal elements in the metal oxide particles (such as the total mass of cadmium elements).

[0095] It should be noted that if the impurity particles include Ni elements, Cr elements, and Co elements, among which, since the adhesion enhancing layer 40 may also include a film layer structure deposited with metals such as Ni and Cr, when the adhesion enhancing layer 40 also includes metal elements such as Ni and Cr, if at least one of Ni particles, Cr particles, etc. is used as the impurity particles embedded on the conductive film, the source of the element contribution of the impurity particles includes A: Ni elements and Cr elements in the adhesion enhancing layer 40, B: Ni elements and Cr elements inherent in the impurity particles themselves. At this time, the content shown by the impurity particles will increase slightly.

[0096] Furthermore, the first metal layer 20 and the second metal layer 30 include copper layers. Copper has extremely high electrical conductivity, second only to silver. When the conductive film is used as a current collector, copper can effectively transmit and collect the current generated by the electrode material, reduce resistance, improve the battery charge and discharge efficiency and overall performance. Copper has sufficient ductility and flexibility, and is easy to be processed into foil materials to meet the requirements of different battery manufacturing processes such as winding and laminating. It ensures good contact and stable bonding between the current collector and the electrode active material. In addition, compared with other precious metals with similar electrical conductivity, the price of copper is more reasonable. Using a conductive film including a copper layer as the current collector in large-scale battery production can greatly reduce costs. Among them, when the first metal layer 20 includes a copper layer, the metal main body layer 211 and the second main body layer 22 of the first metal layer 20 both include copper layers, and the mixed layer 212 of the first metal layer 20 is a film layer structure formed by mixing copper and impurity particles.

[0097] In this embodiment, the impurity particles may preferably be particle structures with an electrode potential lower than that of the metal main body layer 211, the second main body layer 22, and the first metal particles. Thus, the impurity particles can provide cathodic protection for the metal main body layer 211, the second main body layer 22, and the first metal particles. This is because when the conductive film encounters corrosive media such as water and oxygen in the air during transportation or storage, a micro-battery is formed with the impurity particles as the negative electrode and the metal main body layer 211, the second main body layer 22, and the first metal particles as the positive electrode. The impurity particles at the negative electrode part of the micro-battery are more likely to release electrons and be oxidized to form metal ions than the metal main body layer 211, the second main body layer 22, and the first metal particles at the positive electrode. When the metal main body layer 211, the second main body layer 22, and the first metal particles may release electrons, they receive the electrons transferred from the impurity particles at the negative electrode, reducing the rate of electron release or even reducing the oxidized part, so that the metal main body layer 211, the second main body layer 22, and the first metal particles are cathodically protected, ensuring that the conductive film containing the impurity particles is not easily corroded during transportation and storage.

[0098] For example, when the mixed layer 212 is a film layer structure formed by mixing copper and impurity particles, the impurity particles in this embodiment may preferably be zinc particles or zinc alloy particles. Zinc particles themselves have certain conductivity and are not likely to increase the sheet resistance of the conductive film. Moreover, since zinc and copper can form a brass structure, and brass has good electrical conductivity, while changing the structure of the second main body layer 22 through the mixed layer 212 to achieve anti-sticking, the electrical conductivity of the conductive film can be improved. Moreover, when the mixed layer 212 includes a brass structure layer formed by depositing zinc particles and copper particles, the mixed layer 212 can have good corrosion resistance. The higher the zinc content in the mixed layer 212, the cheaper it is, and the highest zinc content can reach 46%.

[0099] In addition, when the metal main body layer 211 and the second main body layer 22 include a copper layer, since the electrode potential of copper is +0.337V. If the impurity particles include tin particles (Sn) or zinc particles (Zn), the electrode potential of Sn is -0.136V, and the electrode potential of Zn is -0.763V. The electrode potentials of tin and zinc are both lower than that of copper. Therefore, the copper layer can be cathodically protected by the impurity particles in the mixed layer 212, so that the first metal layer 20 will not be oxidized and corroded due to the addition of the impurity particles. Moreover, even if the impurity particles are oxidized and corroded due to contact with the corrosive medium, since the material of the oxidized and corroded impurity particles is different from that of the copper layer, the anti-sticking effect can still be achieved.

[0100] Of course, in other embodiments of the present invention, the first metal layer 20 and the second metal layer 30 may also be aluminum layers. As long as it is other deformation methods under the concept of the present invention, they are all within the protection scope of the present invention.

[0101] The substrate layer 10 includes at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenylene ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly(p-phenyleneterephthalamide) layer, a polyoxymethylene layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer, and a cellulose layer. That is to say, different material combinations can be selected as the base material of the substrate layer 10 in this embodiment. Among them, the polypropylene layer has chemical resistance, heat resistance, electrical insulation, high-strength mechanical properties, and good high-abrasion processing properties. The polyethylene terephthalate layer has excellent physical and mechanical properties and excellent electrical insulation in a wide temperature range. The polyethylene layer has excellent low-temperature resistance and chemical stability. The polyamide layer has good wear resistance and strong structural strength. The polyimide layer can withstand extremely low temperatures and has excellent mechanical properties and high radiation resistance. The polyphenylene ether layer has the advantages of high heat resistance, good flame retardancy, and high strength. The polyvinyl chloride layer has good mechanical properties and excellent dielectric properties. The ABS plastic layer has good chemical corrosion resistance and heat resistance. The poly(p-phenyleneterephthalamide) layer has high heat resistance and chemical corrosion resistance. The polyoxymethylene layer has high mechanical properties and excellent electrical insulation. The polytetrafluoroethylene layer has the characteristics of being acid and alkali resistant, resistant to various organic solvents, and high temperature resistant. The polyvinylidene fluoride layer has good chemical resistance, weather resistance, and ultraviolet radiation resistance. The polycarbonate layer has good mechanical properties and good impact resistance. The polyvinyl alcohol layer has high strength. The polyethylene glycol layer has good acid and alkali resistance. The cellulose layer has a strong polar effect.

[0102] The adhesion or mucosal condition on the two opposite sides of the conductive film is specifically manifested as the presence or absence of light-transmitting points on the conductive film and the number of light-transmitting points when observing the surface of the conductive film after unreeling the wound conductive film. The method for measuring the mucosal tension of the film rolls of different conductive films in this embodiment is as follows: when the roll lengths of the film rolls of different conductive films are constant, for example, when unreeling the film roll of a conductive film with a width of 1600 mm, the film roll of the conductive film is set on the unreeling shaft, and after pulling the film horizontally, the distribution of light-transmitting points on the conductive film is observed. Here, it is not limited that the film-pulling action can only be implemented in the horizontal direction. The so-called light-transmitting points are the light-transmitting phenomena generated at the falling-off positions after the film layers are adhered, causing partial or sporadic peeling of the first metal layer 20 and / or the second metal layer 30, that is, the fewer the light-transmitting points, the less likely the conductive film is to have a mucosal condition. The number of light-transmitting points per unit area of the conductive film is mainly for the feedback of the improvement trend, and the difference in single digits can be considered to have basically the same effect. To verify the anti-adhesion condition on the two opposite sides of the conductive film after setting impurity particles, in this embodiment, after performing mucosal tests on the conductive film without impurity particles and the conductive film with different impurity particles, the test results of the film-pulling tests on different conductive films are shown in Table 1 and Table 2.

[0103]

[0104] Table 1

[0105] As can be seen from Table 1, Conductive Film 1 is a conductive film without impurity particles, and the number of light-transmitting points on Conductive Film 1 is as high as 955. Conductive Film 2 and Conductive Film 3 are conductive films with impurity particles. Compared with the number of light-transmitting points on Conductive Film 1, the number of light-transmitting points on Conductive Film 2 and Conductive Film 3 has decreased significantly, and the number of light-transmitting points on Conductive Film 3 is even zero. It can be seen that setting impurity particles can greatly improve the phenomenon of mutual adhesion of the metal layers on the two opposite sides of the conductive film.

[0106]

[0107]

[0108] Table 2

[0109] In Table 2, magnesium particles are provided in both the conductive film 21 and the conductive film 22. The thickness of the mixed layer 212 in the conductive film 22 is thicker, and the number of light-transmitting points on the conductive film 22 is less than that on the conductive film 21. The percentage of the element mass of the zinc particles provided in the conductive film 23 in the conductive film is more than that in the conductive film 24. The thickness of the mixed layer 212 in the conductive film 24 is greater than the thickness of the mixed layer 212 in the conductive film 23. Finally, the surface roughness or the maximum height difference between the conductive film 24 and the conductive film 23 is not much different, and the number of light-transmitting points on both is equally small, only one. The surface roughness and the maximum height difference of the conductive films 25 to 27 are not much different, and there are no light-transmitting points on all of them.

[0110] The second embodiment of the present invention provides a pole piece. The pole piece includes a current collector, and the current collector includes a conductive film. For the specific structure of the conductive film, please refer to the content provided in the first embodiment of the present invention, and this embodiment will not be elaborated here.

[0111] The third embodiment of the present invention provides an energy storage device. The energy storage device includes, but is not limited to, a battery, a battery pack, etc. The energy storage device includes a pole piece. For the specific structure of the pole piece, please refer to the content provided in the second embodiment of the present invention, and this embodiment will not be elaborated here.

[0112] The fourth embodiment of the present invention provides an electrical device. The electrical device includes, but is not limited to, a computer, a floor sweeper, an electric vehicle, etc. The electrical device includes an energy storage device. For the specific structure of the energy storage device, please refer to the content provided in the third embodiment of the present invention, and this embodiment will not be elaborated here.

[0113] The fifth embodiment of the present invention provides a method for preparing a conductive film. The method for preparing a conductive film is used to prepare the conductive film provided in the first embodiment of the present invention. The method includes the following steps:

[0114] Step S1: During the process of preparing at least one of the first metal layer 20 and the second metal layer 30 on the surface of the substrate layer 10 to form the first main layer 21, after impurity particles are deposited in the first main layer 21, a second main layer 22 is prepared on the surface of the first main layer 21. Since the impurity particles are embedded in the first main layer 21, the impurity particles can fill the pores of the first main layer 21, making the first main layer 21 denser. When impurity particles are only deposited in the first main layer 21 of the first metal layer 20, and then the second main layer 22 is further deposited on the basis of the denser first main layer 21, the second main layer 22 will also be denser, and the lattice structure of the second main layer 22 will be different from that of the second metal layer 30 on the second surface 12 of the substrate layer 10, thus preventing mutual adhesion between the second main layer 22 and the second metal layer 30. Moreover, since the impurity particles are covered by the second main layer 22, when the conductive film is transferred to the electroplating process for electroplating thickening, the impurity particles will not be exposed to the electroplating solution. Therefore, before electroplating and thickening the conductive film, there is no need to add a process for cleaning and removing the impurity particles, and it can also ensure that the impurity particles will not contaminate the electroplating solution, improving the electroplating efficiency of the conductive film and the overall structural quality after electroplating thickening.

[0115] Since the mixed layer 212 is not provided in the second metal layer 30, the lattice structure of the second metal layer 30 is different from that of the second main layer 22 on the other side of the conductive film. After the conductive film is wound up, it is not easy for the second metal layer 30 and the second main layer 22 to adhere to each other, which is convenient for unwinding the conductive film to another process. After the conductive film is unwound, there will be no delamination phenomenon on the surface of the conductive film, improving the production quality of the conductive film.

[0116] As Figure 9 shown, step S1 in this embodiment includes:

[0117] Step S11: Use the first preparation process to prepare the metal main layer 211 of the first main layer 21 on the surface of the substrate layer 10. The first preparation process in this embodiment is preferably the magnetron sputtering process. The metal main layer 211 deposited by the magnetron sputtering process has good density, which can promote the densification growth of the subsequent coating (mixed layer 212). Coupled with the fact that the mixed layer 212 is doped with impurity particles, the densification degree of the mixed layer 212 will be better, so that the structure of the second main layer 22 can be significantly different from that of the second metal layer 30, improving the anti-adhesion effect.

[0118] Before depositing the deposited metal main layer 211, an adhesion enhancing layer 40 can also be deposited on both sides of the substrate layer 10. The metal main layer 211 can be obtained by deposition while being adjacent to the deposition of the adhesion enhancing layer 40, and is generally coated by magnetron sputtering. The metal main layer 211 can also be prepared by an evaporation coating method. The metal main layer 211 can also be deposited in two independent deposition methods, that is, it can be obtained by jointly depositing using magnetron sputtering + evaporation methods successively.

[0119] Step S12: Use a second preparation process to prepare a mixed layer 212 of the first main layer 21 on the surface of the metal main layer 211, and prepare a second main layer 22 on the surface of the mixed layer 212. At the same time, during the formation of the mixed layer 212, impurity particles are deposited in the mixed layer 212. Thus, in this embodiment, after the mixed layer 212 is prepared, a second main layer 22 thinner than the mixed layer 212 is prepared on the surface of the mixed layer 212, so that the structure of the second main layer 22 is different from that of the second metal layer 30, achieving the purpose of anti-sticking.

[0120] Both the first preparation process and the second preparation process in this embodiment include at least one of vacuum magnetron sputtering coating and thermal evaporation coating processes. That is to say, the deposited metal main layer 211 and the second metal layer 30 of the actual thin film can be completely thin films deposited by the thermal evaporation coating process, or can be thin films deposited by other coating methods (such as vacuum magnetron sputtering coating) followed by the thermal evaporation coating process. That is, the deposition of these two film layers can be achieved by two coating processes, or can be achieved by only one of the processes. The second preparation process in this embodiment preferably uses the thermal evaporation process, and the thermal evaporation process is relatively easier to control. Whether the impurity particles are particles with a melting point higher or lower than the particle structures of the first metal layer 20 and the second metal layer 30, when depositing the mixed layer 212 and the second main layer 22, the temperature of the corresponding evaporation container (such as a crucible) in the evaporator 60 can be controlled to achieve efficient deposition of the mixed layer 212 and the second main layer 22.

[0121] Specifically, step S12 in this embodiment includes:

[0122] Step S121: Interleave a plurality of first evaporation containers 64 and a plurality of second evaporation containers 65 in the first evaporation area 61 of the evaporator 60 of the first evaporation device. A plurality of second evaporation containers 65 are arranged in the second evaporation area 62 adjacent to the first evaporation area 61. The first evaporation container 64 is used to place the first target for preparing impurity particles, and the second evaporation container 65 is used to place the second target for preparing the second main layer 22;

[0123] Step S122: During the process of performing a thermal evaporation process on the first target and the second target in the evaporator 60, the conductive film is sequentially conveyed from the first evaporation zone 61 to the second evaporation zone 62, so that the particles generated by thermal evaporation in the first evaporation zone 61 form a mixed layer 212 on the surface of the metal main body layer 211, and the particles generated by thermal evaporation in the second evaporation zone 62 form a second main body layer 22 on the surface of the mixed layer 212. As Figure 7 and Figure 8 shown, when the conductive film passes through the first evaporation zone 61, since the first target and the second target are alternately and mixedly arranged in the first evaporation zone 61, the particles evaporated from the first target and the second target will be jointly deposited on the surface of the metal main body layer 211 to form a mixed layer 212. When the conductive film enters the second evaporation zone 62, since only the second target is provided in the second evaporation zone 62, the particles evaporated from the second target will be deposited on the surface of the mixed layer 212 to form a second main body layer 22. To make the thickness of the second main body layer 22 less than the thickness of the mixed layer 212, the number of second targets in the second evaporation zone 62 can be made less than the total number of the first target and the second target in the first evaporation zone 61. In this embodiment, at least one column of a plurality of first evaporation containers 64 for placing the first target and at least one column of a plurality of second evaporation containers 65 for placing the second target can also be sequentially arranged along the conveying direction of the conductive film in the first evaporation zone (i.e., Figure 7 the second direction indicated by the arrow Y in), where the plurality of first evaporation containers 64 in each column are arranged along the third direction, and the plurality of second evaporation containers 65 in each column are also arranged along the third direction. At this time, it is also possible to deposit and obtain a mixed layer 212 on the metal main body layer 211.

[0124] Before the conductive film is sequentially conveyed from the first evaporation zone 61 to the second evaporation zone 62 in step S122, the method provided in this embodiment further includes: setting a third evaporation zone 63 on the evaporator 60, and along the second direction, the third evaporation zone 63 is located on the side of the first evaporation zone 61 away from the second evaporation zone 62 (as Figure 8 shown), and the second direction is parallel to the conveying direction of the conductive film, that is Figure 7The direction indicated by arrow Y. In the third evaporation region 63, a plurality of second evaporation containers 65 for placing the second target are provided, and the plurality of second evaporation containers 65 are arranged in at least one column along the third direction. Before the conductive film is sequentially transferred from the first evaporation region 61 to the second evaporation region 62, the conductive film is first passed through the third evaporation region 63, so that particles thermally evaporated from the third evaporation region 63 and the first evaporation region 61 form a mixed layer 212 on the surface of the metal main body layer 211. The third direction is perpendicular to the first direction and the second direction, as indicated by arrow Z in the figure. Since the conductive film will first pass through the third evaporation region 63 before the first evaporation region 61, the particles evaporated from the second target in the third evaporation region 63 first reach the surface of the metal main body layer 211, and the metal particles of the second target are first deposited on the surface of the metal main body layer 211, which can enhance the adhesion performance between the mixed layer 212 and the metal main body layer 211.

[0125] Regarding Figure 7 and Figure 8 the number and position of the second evaporation containers 65 of the doped impurity particles in Figure 7 and Figure 8 the results shown, Figure 7 and Figure 8 The display of

[0126] only shows that the evaporation containers of the target of the impurity particles and the target of the second main body layer 22 are placed at intervals, so as to form the coating result of the mixed layer 212 film layer.

[0127] The control based on different temperature regions can be implemented and obtained through ways such as the structure of the heating module or the electrode. In principle, the deposition temperature of the doped impurity particles can be a material with a deposition temperature higher or lower than that of the conductive layer. For example, when the first metal layer 20 is a Cu layer, the doped metal impurity particles can be particles such as Ni and Cr. Preferably, the impurity particles with a deposition environment temperature lower than that of the Cu layer are easier to control and have the advantage of taking into account energy conservation and consumption reduction. The metal layer is continuously deposited on the surfaces of the first metal layer 20 and the second metal layer 30 by means of electroplating to achieve the effect of thickening the metal coating. Finally, the film thickness on one side of the conductive film reaches between 750 nm and 1600 nm.

[0128] For the sake of description, spatial relative terms such as "above", "over", "on the upper surface", "upper" etc. can be used here to describe the spatial positional relationship between a device or feature shown in the figure and other devices or features. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation described in the figure for the device. For example, if the device in the drawing is inverted, the device described as "above" or "over" other devices or structures will then be positioned "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both the orientations of "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the corresponding explanations for the spatial relative descriptions used here will be made.

[0129] In addition, it should be noted that using words such as "first" and "second" to limit components is only for the convenience of differentiating the corresponding components. Without otherwise stating, the above words have no special meaning, so it cannot be understood as a limitation on the protection scope of this application.

[0130] The above are only the preferred embodiments of this application and are not used to limit this application. For those skilled in the art, various changes and modifications can be made to this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

Claims

1. A conductive film, characterized in that: include: A substrate layer (10), wherein along a first direction, the substrate layer (10) comprises a first surface (11) and a second surface (12); A conductive layer, the conductive layer comprising a first metal layer (20) and a second metal layer (30), the first metal layer (20) being arranged on the first surface (11), and the second metal layer (30) being arranged on the second surface (12); Wherein, at least one of the first metal layer (20) and the second metal layer (30) comprises a first main layer (21) and a second main layer (22), the first main layer (21) being arranged on the surface of the substrate layer (10), the second main layer (22) being arranged on the surface of the first main layer (21) away from the substrate layer (10), the first main layer (21) being embedded with impurity particles, the impurity particles comprising a particle structure whose material is different from that of the first metal layer (20) and the second metal layer (30); The first main body layer (21) comprises: A metal main body layer (211), the metal main body layer (211) being arranged on the surface of the substrate layer (10), the second main body layer (22) comprising a structural layer whose metal material is the same as that of the metal main body layer (211); a mixed layer (212), the mixed layer (212) being arranged on a surface of the metal main layer (211) close to the second main layer (22), the impurity particles being embedded in the mixed layer (212), and the thickness of the mixed layer (212) being greater than the thickness of the second main layer (22) along a first direction; The conductive layer further comprises an adhesion enhancing layer (40) and a metal thickening layer (50), wherein the adhesion enhancing layer (40) comprises at least two layers, at least one layer of the adhesion enhancing layer (40) is arranged between the first metal layer (20) and the substrate layer (10), and / or at least one layer of the adhesion enhancing layer (40) is arranged between the second metal layer (30) and the substrate layer (10); The metal thickening layer (50) comprises at least two layers, at least one layer of the metal thickening layer (50) is arranged on a surface of the second main layer (22) away from the substrate layer (10), and at least one layer of the metal thickening layer (50) is arranged on a surface of the second metal layer (30) away from the substrate layer (10).

2. The conductive film according to claim 1, characterized in that The mixed layer (212) comprises first metal particles and impurity particles, wherein the first metal particles comprise a particle structure whose metal material is the same as or different from that of the metal main layer (211).

3. The conductive film according to claim 1 or 2, characterized in that: Along the first direction, the thickness of the mixed layer (212) is not less than 10 nm and not more than 80 nm.

4. The conductive film according to claim 1, characterized in that Along the first direction, the thickness of the second main layer (22) is not less than 0.1 nm and not more than 30 nm.

5. The conductive film according to any one of claims 1 to 2 and 4, characterized in that: The foreign particles include a particle structure having a melting point lower than a melting point of the first main layer (21) and / or the second main layer (22).

6. The conductive film according to any one of claims 1 to 2 and 4, characterized in that: The impurity particles include at least one of elemental metal particles and alloy metal particles.

7. The conductive film according to claim 6, characterized in that: The elemental metal particles include at least one of magnesium particles, zinc particles, tin particles, lead particles, cadmium particles, magnesium particles, silver particles, nickel particles, cobalt particles, and chromium particles; and / or the alloy metal particles include at least one of zinc alloy particles, tin alloy particles, lead alloy particles, cadmium alloy particles, magnesium alloy particles, silver alloy particles, nickel alloy particles, cobalt alloy particles, and chromium alloy particles.

8. The conductive film according to any one of claims 1 to 2, 4 and 7, characterized in that: The impurity particles also include at least one of boron oxide particles, cadmium oxide particles, lead oxide particles, and antimony oxide particles.

9. The conductive film according to claim 5, characterized in that: The impurity particles include a particle structure having a melting point not higher than 800°C.

10. The conductive film according to claim 1, characterized in that: Along the first direction, the sum of the thickness of the first metal layer (20) or the second metal layer (30) and the thickness of the adhesion enhancing layer (40) is not less than 35 nm and not more than 120 nm.

11. The conductive film according to claim 1, characterized in that: The total mass of elements in the plating layers on both sides of the substrate layer (10) along the first direction is a first value, the total mass of elements in the impurity particles is a second value, and the percentage between the second value and the first value is between 0.0015% and 0.35%.

12. The conductive film according to any one of claims 1 to 2, 4, 7, 9, 10, and 11, characterized in that: The first metal layer (20) and the second metal layer (30) include a copper layer or an aluminum layer; and / or, The substrate layer (10) comprises at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenylene ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly(p-phenylene terephthalamide) layer, a polyoxymethylene layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer and a cellulose layer.

13. A pole piece, characterized in that: The pole piece includes a current collector, and the current collector includes claim 1 The conductive film according to any one of items 1 to 12.

14. An energy storage device, characterized in that: The energy storage device comprises the pole piece as claimed in claim 13.

15. An electrical equipment, characterized in that: The electrical equipment includes the energy storage device according to claim 14.

16. A method for preparing a conductive film, characterized in that: The conductive film preparation method is used to prepare the conductive film according to any one of claims 1 to 12, and the method comprises the following steps: Step S1: during the process of preparing a first main layer (21) of at least one of the first metal layer (20) and the second metal layer (30) on the surface of the substrate layer (10), after depositing impurity particles in the first main layer (21), a second main layer (22) is prepared on the surface of the first main layer (21); The first main body layer (21) comprises: A metal main body layer (211), wherein the metal main body layer (211) is disposed on the surface of the substrate layer (10); A mixed layer (212), wherein the mixed layer (212) is arranged on a surface of the metal main layer (211) close to the second main layer (22), the impurity particles are embedded in the mixed layer (212), and along a first direction, the thickness of the mixed layer (212) is greater than the thickness of the second main layer (22).

17. The method for preparing a conductive film according to claim 16, characterized in that: Step S1 includes: Step S11: preparing a metal main layer (211) of a first main layer (21) on the surface of the substrate layer (10) using a first preparation process; Step S12: using a second preparation process to prepare a mixed layer (212) of the first main layer (21) on the surface of the metal main layer (211), and preparing the second main layer (22) on the surface of the mixed layer (212), wherein in the process of forming the mixed layer (212), the impurity particles are deposited in the mixed layer (212).

18. The method for preparing a conductive film according to claim 17, characterized in that: The second preparation process includes a thermal evaporation process, and the step S12 includes: A plurality of first evaporation containers (64) and a plurality of second evaporation containers (65) are alternately arranged in a first evaporation zone (61) of an evaporator (60) of a first evaporation device, and a plurality of second evaporation containers (65) are arranged in a second evaporation zone (62) adjacent to the first evaporation zone (61), wherein the first evaporation container (64) is used to place a first target material for preparing the impurity particles, and the second evaporation container (65) is used to place a second target material for preparing the second main layer (22); During the process of the evaporator (60) performing the thermal evaporation process to thermally evaporate the first target material and the second target material, the conductive film is sequentially transferred from the first evaporation zone (61) to the second evaporation zone (62), so that particles generated by thermal evaporation in the first evaporation zone (61) form the mixed layer (212) on the surface of the metal main layer (211), and particles generated by thermal evaporation in the second evaporation zone (62) form the second main layer (22) on the surface of the mixed layer (212).

19. The method for preparing a conductive film according to claim 18, characterized in that: Before sequentially transferring the conductive film from the first evaporation zone (61) to the second evaporation zone (62), the method further comprises: A third evaporation zone (63) is arranged on the evaporator (60), and along the length direction of the conductive film, the third evaporation zone (63) is located on a side of the first evaporation zone (61) away from the second evaporation zone (62), and the second direction is parallel to the conveying direction of the conductive film; A plurality of second evaporation containers (65) for placing the second target material are arranged in the third evaporation zone (63), and the plurality of second evaporation containers (65) are arranged in at least one row along a third direction, so that before the conductive film is sequentially transferred from the first evaporation zone (61) to the second evaporation zone (62), the conductive film is first passed through the third evaporation zone (63), so that particles generated by thermal evaporation in the third evaporation zone (63) and the first evaporation zone (61) form the mixed layer (212) on the surface of the metal main layer (211), and the third direction is perpendicular to the first direction and the second direction.

20. The method for preparing a conductive film according to claim 17, characterized in that: The first preparation process and the second preparation process both include at least one of a vacuum magnetron sputtering coating process and a thermal evaporation coating process.

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