A gas purge structure and semiconductor deposition equipment

Abstract

The present application provides a gas purge structure and semiconductor deposition equipment, relating to the field of semiconductor processing technology. The gas purge structure includes a blowing component and an air inlet component arranged inside the blowing component. A first gas distribution groove is formed between the annular outer wall of the air inlet component and the annular inner wall of the air inlet component. An air inlet pipeline is provided in the air inlet component. The annular outer wall has a first busbar and a second busbar parallel to the center line of the air inlet component. The first busbar is the straight line on the annular outer wall closest to the end of the air inlet pipeline, and the second busbar is the straight line on the annular outer wall farthest from the end of the air inlet pipeline. The vertical distance between the annular outer wall and the annular inner wall decreases successively from the first busbar to the second busbar. The air inlet component is provided with a plurality of first gas distribution tubes. The straight line where the first gas distribution tubes are located passes through the center of the air inlet component. The plurality of first gas distribution tubes are distributed at intervals along the circumference of the air inlet component. The gas purge structure can make the flow distribution of the purge gas more uniform.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a gas purge structure and semiconductor deposition equipment. Background Art

[0002] In some thin film deposition processes (such as those using atomic layer deposition), multiple reactant gases must be introduced into the reaction chamber in a selective manner and must not react with each other before entering the chamber. Therefore, between the alternating introduction of different reactant gases, the reaction chamber must be purged with a purge gas to remove excess reactant gases and reaction products that are not adsorbed on the wafer surface, ensuring that the chemical reaction occurs only on the wafer surface.

[0003] The gas purge structure in the prior art does not have a buffer structure. The purge gas flow rate of the purge holes distributed near the purge air inlet pipe is large, while the purge gas flow rate of the purge holes far away from the purge air inlet pipe is small, resulting in uneven gas purge, which affects the uniformity of thin film deposition. Summary of the Invention

[0004] The purpose of this application is to provide a gas purge structure and a semiconductor deposition device to address the deficiencies in the above-mentioned prior art, which can improve the uniformity of gas purge and thus improve the uniformity of thin film deposition.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of the present application are as follows:

[0006] In one aspect of an embodiment of the present application, a gas purge structure is provided, including: a blowing assembly and an air intake assembly arranged inside the blowing assembly, a first air distribution groove is formed between the annular outer wall of the air intake assembly and the annular inner wall of the blowing assembly, an air intake pipeline is provided in the air intake assembly, and a first busbar and a second busbar parallel to the center line of the air intake assembly are provided on the annular outer wall, the first busbar is the straight line on the annular outer wall closest to the end of the air intake pipeline, the second busbar is the straight line on the annular outer wall farthest from the end of the air intake pipeline, the vertical distance between the annular outer wall and the annular inner wall decreases successively from the first busbar to the second busbar, a plurality of first air distribution tubes are provided on the blowing assembly, the straight line where the first air distribution tubes are located passes through the center of the blowing assembly, and the plurality of first air distribution tubes are distributed at intervals along the circumference of the blowing assembly.

[0007] Optionally, the vertical distance between the annular outer wall and the annular inner wall at the first busbar is 2 to 4 times the vertical distance between the annular outer wall and the annular inner wall at the second busbar.

[0008] Optionally, the vertical distance between the annular outer wall and the annular inner wall at the first busbar is 12 mm to 16 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar is 4 mm to 6 mm.

[0009] Optionally, the blowing assembly includes a blowing ring, the first air distribution tube is located on the blowing ring, the air intake assembly includes an air intake disc, the air intake pipeline is located on the air intake disc, the outer diameter of the air intake disc is smaller than the inner diameter of the blowing ring, and the air intake disc and the blowing ring are eccentrically arranged.

[0010] Optionally, the first air distribution tubes extend radially of the air blowing ring, a plurality of first air distribution tubes are evenly distributed along the circumferential direction of the air blowing ring, and the air intake pipeline extends radially of the air intake disk.

[0011] Optionally, the air intake assembly also includes an air dividing ring, which is arranged between the air intake disc and the blowing ring. A first air dividing groove is formed between the outer wall of the air dividing ring and the inner wall of the blowing ring, and a second air dividing groove is formed between the inner wall of the air dividing ring and the outer wall of the air intake disc. A plurality of second air dividing tubes are provided on the air dividing ring, and the second air dividing tubes extend radially along the air dividing ring. The plurality of second air dividing tubes are spaced apart along the circumferential direction of the air dividing ring.

[0012] Optionally, the air intake disc and the air distribution ring are concentrically arranged, and from the first busbar to the second busbar, the angle between two adjacent second air distribution tubes first increases and then decreases, and the second air distribution tubes are staggered with the end of the air intake pipeline.

[0013] Optionally, the angle between two adjacent second gas distribution tubes is 13° to 25°.

[0014] Optionally, the vertical distance between the outer wall of the air intake disk and the inner wall of the air separation ring decreases sequentially from the first busbar to the second busbar.

[0015] Another aspect of the embodiments of the present application provides a semiconductor deposition device, comprising a gas purge structure as described above.

[0016] The beneficial effects of this application include:

[0017] The present application provides a gas purge structure, comprising: a blowing assembly and an air intake assembly arranged inside the blowing assembly, a first air distribution groove is formed between the annular outer wall of the air intake assembly and the annular inner wall of the blowing assembly, an air intake pipeline is provided in the air intake assembly, and the annular outer wall has a first busbar and a second busbar parallel to the center line of the air intake assembly, the first busbar is the straight line on the annular outer wall closest to the end of the air intake pipeline, the second busbar is the straight line on the annular outer wall farthest from the end of the air intake pipeline, the vertical distance between the annular outer wall and the annular inner wall decreases successively from the first busbar to the second busbar, a plurality of first air distribution tubes are provided on the blowing assembly, the straight line where the first air distribution tubes are located passes through the center of the blowing assembly, and the plurality of first air distribution tubes are distributed at intervals along the circumference of the blowing assembly. The gas purge structure sets a first gas dividing groove between the air inlet component and the air blowing component, and sets the width of the first gas dividing groove to be wider on the side close to the end of the air inlet pipeline and narrower on the side away from the end of the air inlet pipeline, thereby reducing the flow rate of the purge gas when it enters the first gas dividing groove in the air inlet pipeline and increasing the flow rate on the other side, so that the flow distribution of the purge gas entering the reaction chamber is more uniform, thereby improving the uniformity of thin film deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 This is one of the structural schematic diagrams of the gas purge structure provided in an embodiment of the present application;

[0020] Figure 2 This is a second structural diagram of the gas purge structure provided in an embodiment of the present application;

[0021] Figure 3 Figure 2 is a gas flow velocity diagram at the outlet of the 24 first gas distribution tubes in the experimental group 1 and the control group when the purge gas flow rate is 500 sccm;

[0022] Figure 4 The gas flow rate diagram at the outlet of the 24 first gas distribution tubes in the experimental group 1 and the control group when the purge gas flow rate is 1000 sccm;

[0023] Figure 5 Figure 2 is a gas flow velocity diagram at the outlet of the 24 first gas distribution tubes in the experimental group 2 and the control group when the purge gas flow rate is 500 sccm;

[0024] Figure 6Figure 2 is a gas flow velocity diagram at the outlet of the 24 first gas distribution tubes in the experimental group 2 and the control group when the purge gas flow rate is 1000 sccm;

[0025] Figure 7 A schematic structural diagram of the semiconductor deposition equipment provided in an embodiment of the present application.

[0026] Icons: 100-gas purge structure; 110-blowing assembly; 111-blowing ring; 120-air inlet assembly; 121-air inlet disc; 122-gas distribution ring; 130-first gas distribution groove; 140-air inlet pipeline; 151-first busbar; 152-second busbar; 160-first gas distribution tube; 170-second gas distribution tube; 180-second gas distribution groove; 200-semiconductor deposition equipment. DETAILED DESCRIPTION

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Generally, the components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application as claimed, but merely represents selected embodiments of the present application. It should be noted that, unless there is a conflict, the various features of the embodiments of the present application may be combined with each other, and the combined embodiments are still within the scope of protection of the present application.

[0029] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0030] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product of this application is typically placed when in use. These terms are intended only to facilitate the description of this application and simplify the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0031] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to mechanical connections or electrical connections; they can refer to direct connections or indirect connections through an intermediate medium; and they can refer to internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0032] In one aspect of the embodiment of the present application, referring to Figure 1 , provides a gas purge structure 100, including: a blowing component 110 and an air inlet component 120 arranged inside the blowing component 110, a first gas distribution groove 130 is formed between the annular outer wall of the air inlet component 120 and the annular inner wall of the air inlet component 110, an air inlet pipeline 140 is provided in the air inlet component 120, and a first busbar 151 and a second busbar 152 are provided on the annular outer wall parallel to the center line of the air inlet component 120, the first busbar 151 is a distance from the air inlet component 120 to the annular outer wall. The second busbar 152 is the straight line closest to the end of the air inlet pipe 140 on the annular outer wall, and the vertical distance between the annular outer wall and the annular inner wall decreases from the first busbar 151 to the second busbar 152. A plurality of first air distribution tubes 160 are provided on the blowing assembly 110. The straight line where the first air distribution tubes 160 are located passes through the center of the blowing assembly 110, and the plurality of first air distribution tubes 160 are distributed at intervals along the circumference of the blowing assembly 110.

[0033] The gas purge structure 100 includes a blowing assembly 110 and an air inlet assembly 120, wherein the blowing assembly 110 has an annular portion, and the air inlet assembly 120 is installed in the annular portion of the blowing assembly 110. The air inlet assembly 120 has an annular outer wall, and the air inlet assembly 110 has an annular inner wall. The size of the annular inner wall is smaller than the size of the annular outer wall, so that an annular first gas distribution groove 130 is formed between the air inlet assembly 120 and the air blowing assembly 110. The purge gas is introduced from the air inlet pipe 140 on the air inlet assembly 120, and then enters the first gas distribution groove 130 through the annular outer wall of the air inlet assembly 120. After diffusing in the first gas distribution groove 130, it enters the reaction chamber for depositing the thin film through the multiple first gas distribution tubes 160 on the air blowing assembly 110. For example, the first gas distribution tubes 160 are evenly distributed along the circumference of the air blowing assembly 110.

[0034] The annular outer wall of the air intake assembly 120 and the annular inner wall of the air blowing assembly 110 are both continuous curved surfaces, formed by a busbar parallel to the center line of the air intake assembly 120 moving along a preset trajectory. The annular outer wall has a first busbar 151 and a second busbar 152. The first busbar 151 is the busbar closest to the end of the air intake pipe 140, and the second busbar 152 is the busbar farthest from the end of the air intake pipe 140. Figure 1 From the perspective of , the first busbar 151 and the second busbar 152 are respectively a point. Along the circumferential direction of the annular outer wall, from the position of the first busbar 151 to the position of the second busbar 152, the vertical distance between the annular outer wall and the annular inner wall decreases successively. That is to say, if the vertical distance between the annular outer wall and the annular inner wall is defined as the width of the first gas dividing groove 130, the width of the first gas dividing groove 130 decreases successively from the position of the first busbar 151 to the position of the second busbar 152, and the farther the first gas dividing groove 130 is from the end of the air inlet pipe 140, the narrower its width. With such a setting, the purge gas can be buffered when it passes through the air inlet pipe 140 and enters the first gas dividing groove 130, so that the gas flow rate is reduced, while the flow rate on the other side of the first gas dividing groove 130 is increased, thereby ensuring that the flow distribution of the purge gas sent into the reaction chamber is more uniform.

[0035] It should be noted that, in this embodiment, there is no limitation on the structure of the air intake assembly 120 and the air blowing assembly 110, and the shape of the annular outer wall and the annular inner wall, as long as a first annular gas separation groove 130 can be formed and the transmission and diffusion of the purge gas can be achieved.

[0036] The above-mentioned gas purge structure 100, by setting a first gas dividing groove 130 between the air inlet component 120 and the air blowing component 110, and setting the width of the first gas dividing groove 130 to be wider on the side close to the end of the air inlet pipe 140 and narrower on the side away from the end of the air inlet pipe 140, thereby reducing the flow rate of the purge gas when it enters the first gas dividing groove 130 in the air inlet pipe 140 and increasing the flow rate on the other side, so that the flow distribution of the purge gas entering the reaction chamber is more uniform, thereby improving the uniformity of thin film deposition.

[0037] Optionally, in one achievable manner of an embodiment of the present application, the vertical distance (D1) between the annular outer wall and the annular inner wall at the first busbar 151 is 2 to 4 times the vertical distance (D2) between the annular outer wall and the annular inner wall at the second busbar 152.

[0038] In other words, the maximum width of the first gas dividing groove 130 is 2 to 4 times the minimum width. This allows the purge gas to be better buffered within the first gas dividing groove 130, further improving the uniformity of the flow distribution of the purge gas into the reaction chamber.

[0039] It should be noted that 2 times to 4 times includes the endpoint values, that is, the vertical distance between the annular outer wall and the annular inner wall at the first busbar 151 can be 2 times or 4 times the vertical distance between the annular outer wall and the annular inner wall at the second busbar 152. Similarly, the subsequent range definitions also include the endpoint values.

[0040] Optionally, in one implementation of the present application, the vertical distance between the annular outer wall and the annular inner wall at the first busbar 151 is 12 mm to 16 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar 152 is 4 mm to 6 mm. Within these ranges, the uniformity of the flow distribution of the purge gas delivered into the reaction chamber can be further improved.

[0041] Preferably, the vertical distance between the annular outer wall and the annular inner wall at the first busbar 151 (the maximum width of the first gas dividing groove 130) is 12 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar 152 (the minimum width of the first gas dividing groove 130) is 4 mm; or, the vertical distance between the annular outer wall and the annular inner wall at the first busbar 151 (the maximum width of the first gas dividing groove 130) is 16 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar 152 (the minimum width of the first gas dividing groove 130) is 4 mm; or, the vertical distance between the annular outer wall and the annular inner wall at the first busbar 151 (the maximum width of the first gas dividing groove 130) is 12 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar 152 (the minimum width of the first gas dividing groove 130) is 6 mm. The above dimensions are easy to process and can better improve the uniformity of the flow distribution of the purge gas sent into the reaction chamber.

[0042] Optionally, in one achievable method of an embodiment of the present application, the blowing assembly 110 includes a blowing ring 111, the first air distribution tube 160 is located on the blowing ring 111, the air intake assembly 120 includes an air intake disc 121, the air intake pipeline 140 is located on the air intake disc 121, the outer diameter of the air intake disc 121 is smaller than the inner diameter of the blowing ring 111, and the air intake disc 121 is eccentrically arranged with respect to the blowing ring 111.

[0043] It can be understood that the blowing ring 111 is cylindrical as a whole, and its cross section is a circular ring, hollow inside and has a certain thickness. The air intake disc 121 is cylindrical as a whole, and its cross section is circular, and has a certain thickness. Setting the blowing assembly 110 and the air intake assembly 120 into a cylindrical shape makes it easier to process. The air intake disc 121 is arranged in the inner hollow area of the blowing ring 111, and a first air dividing groove 130 is formed between the outer wall of the air intake disc 121 and the inner wall of the blowing ring 111. The center lines of the air intake disc 121 and the blowing ring 111 are parallel to each other, and the two are eccentrically arranged to achieve that the width of the first air dividing groove 130 decreases successively from the position of the first busbar 151 to the position of the second busbar 152.

[0044] Optionally, in one implementation of the present application, the air inlet pipe 140 extends radially along the air inlet disk 121, the first air distribution tubes 160 extend radially along the air blowing ring 111, and the plurality of first air distribution tubes 160 are evenly distributed along the circumference of the air blowing ring 111. This arrangement facilitates processing and allows the purge gas to be blown directly into the first air distribution groove 130 and the reaction chamber.

[0045] Optionally, in one possible implementation of the embodiment of the present application, please refer to Figure 2 The air intake assembly 120 also includes an air dividing ring 122, which is arranged between the air intake disc 121 and the blowing ring 111. A first air dividing groove 130 is formed between the outer wall of the air dividing ring 122 and the inner wall of the blowing ring 111, and a second air dividing groove 180 is formed between the inner wall of the air dividing ring 122 and the outer wall of the air intake disc 121. A plurality of second air dividing tubes 170 are provided on the air dividing ring 122, and the second air dividing tubes 170 extend along the radial direction of the air dividing ring 122. The plurality of second air dividing tubes 170 are distributed at intervals along the circumferential direction of the air dividing ring 122.

[0046] It can be understood that the gas dividing ring 122 is cylindrical as a whole, and its cross section is a circular ring, hollow inside and has a certain thickness. The setting of the gas dividing ring 122 enables the gas purge structure 100 to have a double-layer groove, which can achieve double buffering of the purge gas. The purge gas is introduced from the air inlet pipe 140 on the air inlet disc 121, and then enters the second gas dividing groove 180 through the annular outer wall of the air inlet disc 121 to achieve the first buffering; then enters the first gas dividing groove 130 through the second gas dividing tube 170 on the gas dividing ring 122 to achieve the second buffering; finally, enters the reaction chamber for depositing the thin film through the multiple first gas dividing tubes 160 on the blowing ring 111. The double-layer grooves for the double buffering of the purge gas can further improve the uniformity of the flow distribution of the purge gas sent into the reaction chamber.

[0047] Optionally, in one achievable method of the embodiment of the present application, the air inlet disc 121 and the air dividing ring 122 are concentrically arranged, that is, the width of the second air dividing groove 180 remains unchanged. The second air dividing tube 170 and the end of the air inlet pipe 140 are staggered, that is, the second air dividing tube 170 and the end of the air inlet pipe 140 are not distributed along the radial direction of the air inlet disc 121, thereby avoiding the purge gas released by the air inlet pipe 140 from directly entering the second air dividing tube 170, and thus cannot be fully diffused in the second air dividing groove 180. Along the circumferential direction of the air dividing ring 122, from the position of the first busbar 151 to the position of the second busbar 152, the angle between the two adjacent second air dividing tubes 170 first increases and then decreases, thereby making the flow distribution of the purge gas entering the first air dividing groove 130 more uniform. In conjunction with the change in the width of the first air dividing groove 130, the flow distribution of the purge gas sent into the reaction chamber can be made more uniform.

[0048] It can be understood that the change in the angle between two adjacent second gas-dividing tubes 170 can be a step-by-step change or a broken-line change; that is, the angles between two adjacent second gas-dividing tubes 170 can be different or partially the same, as long as the overall change trend is to increase first and then decrease.

[0049] Optionally, in one implementable manner of the embodiment of the present application, the angle between two adjacent second gas distribution tubes 170 is 13° to 25°.

[0050] For example, along the circumferential direction of the gas distribution ring 122, from the position of the first busbar 151 to the position of the second busbar 152, the angles between two adjacent second gas distribution tubes 170 are 20°, 25°, 25°, 25°, 25°, 22.5°, and 22.5°, respectively; or, the angles between two adjacent second gas distribution tubes 170 are 23°, 25°, 25°, 25°, 18°, 18°, 18°, and 13°, respectively.

[0051] Optionally, in one possible implementation of the embodiment of the present application, the vertical distance between the outer wall of the air inlet disk 121 and the inner wall of the air dividing ring 122 decreases sequentially from the first busbar 151 to the second busbar 152. In other words, along the circumference of the air inlet disk 121, the width of the second air dividing groove 180 decreases sequentially from the location of the first busbar 151 to the location of the second busbar 152. This can also improve the uniformity of the purge gas flow distribution entering the first air dividing groove 130.

[0052] A flow distribution test was performed on the above-mentioned gas purge structure 100. The gas purge structure 100 of experimental group one included a blowing ring 111 and an air intake disc 121 arranged in the blowing ring 111. The air intake disc 121 and the blowing ring 111 were eccentrically arranged. The width of the first air distribution groove 130 decreased successively from the position of the first busbar 151 to the position of the second busbar 152. 24 first air distribution tubes 160 were evenly arranged on the blowing ring 111. The gas purge structure 100 of experimental group two includes a blowing ring 111, an air intake disc 121 arranged inside the blowing ring 111, and an air dividing ring 122 arranged between the air intake disc 121 and the blowing ring 111. The air dividing ring 122 is concentrically arranged with the air intake disc 121. From the first busbar 151 to the second busbar 152, the angle between two adjacent second air dividing tubes 170 first increases and then decreases. The second air dividing tubes 170 are staggered with the end of the air intake pipeline 140. The air intake disc 121 and the blowing ring 111 are eccentrically arranged. The width of the first air dividing groove 130 decreases successively from the position of the first busbar 151 to the position of the second busbar 152. 24 first air dividing tubes 160 are evenly arranged on the blowing ring 111. The gas purge structure 100 of the control group includes a blowing ring 111 and an air inlet disk 121 arranged inside the blowing ring 111. The air inlet disk 121 is arranged concentrically with the blowing ring 111. The width of the first air distribution groove 130 remains unchanged. 24 first air distribution tubes 160 are evenly arranged on the blowing ring 111.

[0053] When the purge gas flow rate is 500 sccm, the gas flow rate at the outlet of the 24 first gas distribution tubes 160 in the experimental group 1 and the control group is as follows: Figure 3 When the purge gas flow rate is 1000 sccm, the gas flow rate at the outlet of the 24 first gas distribution tubes 160 in the experimental group 1 and the control group is as follows: Figure 4 When the purge gas flow rate is 500 sccm, the gas flow rate at the outlet of the 24 first gas distribution tubes 160 in the experimental group 2 and the control group is as follows: Figure 5 When the purge gas flow rate is 1000 sccm, the gas flow rate at the outlet of the 24 first gas distribution tubes 160 in the experimental group 2 and the control group is as follows: Figure 6 shown.

[0054] Depend on Figure 3 and Figure 4 It can be seen that compared with the control group, the uniformity of the gas flow rate at the outlet of the 24 first gas distribution tubes 160 of the gas purge structure 100 of the experimental group 1 is significantly improved; Figure 5 and Figure 6 It can be seen that compared with the control group, the uniformity of the gas flow rate at the outlet of the 24 first gas distribution tubes 160 of the gas purge structure 100 of the experimental group 2 is significantly improved; Figure 3 and Figure 5 、 Figure 4 and Figure 6 It can be seen that, compared with the experimental group 1, the uniformity of the gas flow rate at the outlet positions of the 24 first gas distribution tubes 160 of the gas purge structure 100 in the experimental group 2 is further improved.

[0055] Please refer to Figure 1 and Figure 7 This embodiment also provides a semiconductor deposition device 200, including a gas purge structure 100 as described above.

[0056] The semiconductor deposition apparatus 200 includes the same structure and benefits as the gas purge structure 100 in the aforementioned embodiment. The structure and benefits of the gas purge structure 100 have been described in detail in the aforementioned embodiment and will not be repeated here.

[0057] The above description is merely a preferred embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. A gas purge structure, characterized in that: include:

8. The ventilator as claimed in claim 7, wherein the ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator. The ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator. The ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator. The ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator. The ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator. The ventilator is provided with a first channel which is parallel to the centre line of the ventilator and the first channel which is parallel to the centre line of the ventilator The air blowing assembly includes an air blowing ring, the first air distributing tube is located on the air blowing ring, and the first air distributing tube extends radially along the air blowing ring; the air intake assembly includes an air intake disc, the air intake pipeline is located on the air intake disc, the outer diameter of the air intake disc is smaller than the inner diameter of the air blowing ring, and the air intake disc is eccentrically arranged with respect to the air blowing ring; The air intake assembly further includes an air dividing ring, which is arranged between the air intake disc and the air blowing ring. A first air dividing groove is formed between the outer wall of the air dividing ring and the inner wall of the air blowing ring. A second air dividing groove is formed between the inner wall of the air dividing ring and the outer wall of the air intake disc. A plurality of second air dividing tubes are provided on the air dividing ring. The second air dividing tubes extend radially along the air dividing ring. The second air dividing tubes are staggered with the end of the air intake pipe. A plurality of the second gas distribution tubes are spaced apart along the circumferential direction of the gas distribution ring. The air intake disk is concentrically arranged with the gas distribution ring. From the first busbar to the second busbar, the angle between two adjacent second gas distribution tubes first increases and then decreases.

2. The gas purge structure according to claim 1, wherein: The vertical distance between the annular outer wall and the annular inner wall at the first busbar is 2 to 4 times the vertical distance between the annular outer wall and the annular inner wall at the second busbar.

3. The gas purge structure according to claim 2, wherein: The vertical distance between the annular outer wall and the annular inner wall at the first busbar is 12 mm to 16 mm, and the vertical distance between the annular outer wall and the annular inner wall at the second busbar is 4 mm to 6 mm.

4. The gas purge structure according to claim 1, wherein: The plurality of first air distribution tubes are evenly distributed along the circumferential direction of the air blowing ring, and the air intake pipeline extends along the radial direction of the air intake disk.

5. The gas purge structure according to claim 1, wherein: The angle between two adjacent second gas distribution tubes is 13°~25°.

6. The gas purge structure according to claim 1, wherein: The vertical distance between the outer wall of the air intake disk and the inner wall of the air separation ring decreases sequentially from the first busbar to the second busbar.

7. A semiconductor deposition device, characterized in that: The method comprises the gas purge structure according to any one of claims 1 to 6.

Images