Process chambers and semiconductor processing equipment

Abstract

This application provides a process chamber and semiconductor process equipment. The process chamber includes a cavity, and a deposition ring, a carrier disk, and a shielding member disposed within the cavity. A support portion surrounding the carrier disk is disposed on the side wall near the bottom end. The deposition ring is supported by the support portion and includes a first splice body and a second splice body, with the first splice body spliced ​​above the second splice body. The first splice body includes a first extension and a second extension body connected to each other. The shielding member is disposed around the first splice body, and a deposition trench is formed in the area defined between the first splice body and the shielding member. Process gas channels are formed between the opposing surfaces of the first splice body and the shielding member and between the opposing surfaces of the second splice body and the shielding member. The difference in the coefficient of thermal expansion between the first splice body and the carrier disk is smaller than the difference in the coefficient of thermal expansion between the second splice body and the carrier disk.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technology, and in particular to a process chamber and semiconductor process equipment. Background Technology

[0002] During the semiconductor deposition process, a deposition ring needs to be set around the periphery of the carrier pad used to support the wafer to shield the exposed part of the carrier pad and prevent it from being sputtered by plasma.

[0003] Currently, the industry standard for carrier disks is the electrostatic chuck. To address the issues of electrostatic adsorption and compatibility with ground insulation, electrostatic chucks are primarily made of alumina ceramic or aluminum nitride ceramic. The corresponding deposition ring should be made of a material with the same coefficient of thermal expansion as the electrostatic chuck and should also possess the same ground insulation capability. Therefore, ceramic materials are the most suitable choice for the deposition ring. However, ceramic materials are prone to brittle fracture, resulting in a relatively short lifespan.

[0004] Because metallic materials have greater strength than ceramic submaterials, a metallic material with a similar coefficient of thermal expansion to the ceramic electrostatic chuck can be selected to fabricate the deposition ring. However, the fit clearance between the electrostatic chuck and the deposition ring must be considered. If the clearance is too large, the deposited material will fill the gap, leading to adhesion. If the clearance is too small, the electrostatic chuck and the deposition ring will be squeezed together, increasing the risk of breakage. Currently, Kovar alloy is a metallic material with a similar coefficient of thermal expansion to aluminum nitride ceramics. However, Kovar alloy is very expensive, and there are very few manufacturers that can process Kovar alloy. The long processing cycle for complex parts and the limited availability of raw materials also restrict the mass production of deposition rings. Summary of the Invention

[0005] This application provides a process chamber and semiconductor process equipment to solve the problem that the material of different parts of a monolithic deposition ring cannot be reasonably adjusted according to requirements.

[0006] The process chamber provided in this embodiment includes:

[0007] In a first aspect, embodiments of this application provide a process chamber.

[0008] The process chamber provided in this application embodiment is applied to semiconductor process equipment. The process chamber includes: a cavity, and a deposition ring, a carrier disk, and a shielding member disposed within the cavity; a support portion surrounding the carrier disk is disposed on the side wall near the bottom end of the carrier disk; the deposition ring is supported by the support portion, and the deposition ring includes an annular first splice body and an annular second splice body, with the first splice body spliced ​​above the second splice body; the first splice body includes an annular first extension portion located on the support portion and extending from the top end to the bottom end of the side wall of the carrier disk, and a second extension portion extending from the bottom end of the first extension portion in a direction away from the side wall of the carrier disk; the shielding member is disposed around the first splice body, and a deposition trench is formed in the area defined between the first splice body and the shielding member; a process gas channel is formed between the opposing surfaces of the first splice body and the shielding member and between the opposing surfaces of the second splice body and the shielding member; the difference in the coefficient of thermal expansion between the first splice body and the carrier disk is smaller than the difference in the coefficient of thermal expansion between the second splice body and the carrier disk.

[0009] Optionally, both the first splicing body and the second splicing body are made of metal.

[0010] Optionally, the material of the first splice body includes Kovar alloy or aluminum nitride, and the material of the second splice body includes stainless steel, aluminum oxide or titanium alloy.

[0011] Optionally, the distance between the first splice body and the side wall of the carrier plate is less than the distance between the second splice body and the side wall of the carrier plate.

[0012] Optionally, one end of the second splice body near the support portion is supported by the support portion.

[0013] Optionally, the upper side of the second extension has a first surface that bends away from the second splice at the end away from the carrier plate; the portion of the shield near the carrier plate is provided with a second surface that is opposite to the first surface, and the space between the first surface and the second surface forms the first section of the process gas channel.

[0014] Optionally, the first splice body has a third surface on its circumferential side facing the shielding member, the second splice body includes a third extension, the third extension extends from the lower side of the third surface in a direction away from the first splice body, and the surface of the third extension facing the shielding member is a fourth surface; the shielding member is provided with a fifth surface opposite to the third surface and the fourth surface respectively, the space between the third surface and the fifth surface forms a second section of the process gas channel, and the space between the fourth surface and the fifth surface forms a third section of the process gas channel.

[0015] Optionally, the fourth surface is flush with the third surface.

[0016] Optionally, the second splice further includes a fourth extension, which extends from the end of the fourth surface away from the first splice in a direction away from the carrier plate. The surface of the fourth extension facing the shield is a sixth surface. The shield is provided with a seventh surface opposite to the sixth surface. The space between the sixth surface and the seventh surface forms the fourth segment of the process gas channel. The first segment, the second segment, the third segment, and the fourth segment of the process gas channel are connected in sequence.

[0017] Optionally, the sixth surface is provided with a first thermally conductive material layer.

[0018] Optionally, the second extension is provided with a connecting groove on the side facing the second splicing body. The second splicing body includes a connecting part facing the second extension, and the connecting part is spliced ​​and connected with the connecting groove.

[0019] Optionally, the side wall of the connecting groove away from the bearing plate is provided with a hook, and the side of the connecting part away from the bearing plate is provided with a first recess, and the hook is engaged vertically between the upper and lower side walls of the first recess.

[0020] Optionally, the side of the connecting portion away from the bearing plate is further provided with a second recess, the second recess is vertically arranged, and the second recess communicates with the first recess; the hook can move along the second recess to the first recess.

[0021] Optionally, a second thermally conductive material layer is provided on the surface of the connecting part opposite to the bottom of the connecting groove.

[0022] Optionally, the shielding component has a cooling medium flow channel.

[0023] Optionally, the deposition ring further includes an induction coil, which is sandwiched between the first splice body and the second splice body.

[0024] Secondly, embodiments of this application provide a semiconductor process apparatus.

[0025] The semiconductor process equipment provided in this application includes any of the process chambers provided in this application.

[0026] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects:

[0027] In the embodiments of this application, the deposition ring of the process chamber can be assembled from a first splice and a second splice. The first splice adjacent to the support plate can be made of a material with a low coefficient of thermal expansion, while the second splice can be made of a material with a higher coefficient of thermal expansion than the first splice. This allows for a reduction in the manufacturing cost and an increase in the service life of the deposition ring by rationally selecting the materials of its various parts. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 A schematic diagram of a process chamber provided for an embodiment of this application;

[0030] Figure 2 A schematic diagram of a deposition ring provided in an embodiment of this application;

[0031] Figure 3 This is a partial schematic diagram of the region near the deposition ring of a process chamber provided in an embodiment of this application;

[0032] Figure 4 A partial schematic diagram of a deposition ring provided in an embodiment of this application;

[0033] Figure 5 A cross-sectional view of a first spliced ​​body provided in an embodiment of this application;

[0034] Figure 6 A partial view of a first spliced ​​body provided in an embodiment of this application;

[0035] Figure 7 A partial view of a second splice body provided in an embodiment of this application;

[0036] Figure 8 A schematic diagram illustrating the principle of splicing a first splice body and a second splice body together, provided for an embodiment of this application;

[0037] Figure 9 This is a partial schematic diagram of a process chamber provided in an embodiment of this application.

[0038] Explanation of reference numerals in the attached figures:

[0039] 100 - Process chamber; 110 - Chamber body; 120 - Deposition ring; 121 - First splice; 1211 - First extension; 1212 - Second extension; 1213 - Connecting groove; 1214 - Hook; 122 - Second splice; 1221 - Third extension; 1222 - Fourth extension; 1223 - Connecting part; 1224 - First recess; 1225 - Second recess; 1231 - First surface; 1232 - Third surface; 1233 - Fourth surface; 1234 - Sixth Surface; 124-Deposition tank; 130-Supporting plate; 131-Side wall of the support plate; 132-Support; 140-Shielding component; 1411-Second surface; 1412-Fifth surface; 1413-Seventh surface; 142-Cooling medium channel; 150-Process gas channel; 161-First thermally conductive material layer; 162-Second thermally conductive material layer; 163-Electro-induced coil; 171-Magnetic field generator; 172-Cover; 173-Gas supply device; 174-Evacuation pump; 200-Wafer. Detailed Implementation

[0040] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0041] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0042] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application's specification may have been chosen by the applicant according to his or her judgment, and their detailed meanings are explained in the relevant sections of the description herein. Moreover, this application is to be understood not only by the actual terms used, but also by the meaning implied by each term.

[0043] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0044] This application provides a process chamber, which can be applied to semiconductor process equipment. (Reference) Figures 1 to 9 The process chamber 100 provided in this application embodiment may include: a cavity 110, and a deposition ring 120, a support disk 130, and a shield 140 disposed within the cavity 110. In other words, the process chamber 100 may include a cavity 110, a deposition ring 120, a support disk 130, and a shield 140; the deposition ring 120, the support disk 130, and the shield 140 are disposed within the cavity 110.

[0045] refer to Figure 2 and Figure 3 A support portion 132 is provided on the side wall 131 of the support plate 130 near the bottom end, surrounding the support plate 130. The deposition ring 120 is supported on the support portion 132. The deposition ring 120 includes an annular first splice body 121 and an annular second splice body 122, and the first splice body 121 is spliced ​​on top of the second splice body 122.

[0046] The first splice 121 includes an annular first extension 1211 located on the support 132 and extending from the top end of the side wall 131 of the bearing plate 130 toward the bottom end, and a second extension 1212 extending from the bottom end of the first extension 1211 toward the side wall 131 of the bearing plate 130 away from the side wall 131 of the bearing plate 130.

[0047] The shielding element 140 is disposed around the first splice body 121, and the area defined between the first splice body 121 and the shielding element 140 forms a deposition tank 124. (Reference) Figure 3 The area defined by the vertical sidewall and upper surface of the first splice 121 and the left side surface of the shield 140 forms a deposition tank 124. In this way, during the semiconductor deposition process, the deposition material at the edge of the wafer 200 can be contained in the deposition tank 124, thereby preventing the deposition material from causing the edge of the wafer 200 supported on the carrier disk 130 to adhere to the periphery of the carrier disk 130.

[0048] Process gas channels 150 are formed between the opposing surfaces of the first splice 121 and the shield 140, and between the opposing surfaces of the second splice 122 and the shield 140. Exemplarily, in the case where the process chamber is a physical vapor deposition (PVD) process chamber, process gas can be introduced into the process area above the carrier plate 130 via the process gas channels 150.

[0049] The difference in the coefficient of thermal expansion between the first splice 121 and the carrier plate 130 is smaller than the difference in the coefficient of thermal expansion between the second splice 122 and the carrier plate 130.

[0050] In this application, since the first splice body 121 is adjacent to the sidewall 131 of the support disk 130, it is formed of a material with a small difference in thermal expansion coefficient between itself and the support disk 130. This avoids the problem of excessively large or small mating clearance between the electrostatic chuck and the deposition ring due to a large difference in thermal expansion coefficient. The second splice body 122 is located below the first splice body and does not actively contact the deposition material. Therefore, there is no need to worry about excessive mating clearance between the second splice body 122 and the support disk 130 causing adhesion problems. Consequently, the second splice body 122 can be formed of a material with high mechanical strength and low cost. Therefore, the deposition ring 120 with a spliced ​​structure in this application can both meet the performance requirements of the deposition ring and reduce its cost.

[0051] To enable those skilled in the art to better understand the solutions provided in the embodiments of this application, the following provides more detailed optional materials for the first splice body 121 and the second splice body 122 for reference by those skilled in the art.

[0052] In some embodiments, the first splice body 121 may be made of metal. For example, the material 130 of the carrier disk may be aluminum nitride, and the material of the first splice body 121 may be Kovar alloy. It should be noted that Kovar alloy is also known as a constant expansion alloy or sealing alloy. Kovar alloy has a relatively constant low or moderate coefficient of thermal expansion in a temperature range of -70 to 500 degrees Celsius. Furthermore, because Kovar alloy possesses the characteristics of strong thermal shock resistance and good mechanical strength inherent in metallic materials, the option of using Kovar alloy to make the first splice body 121 can improve the service life of the deposition ring 120 compared to the option of using a ceramic material with a lower coefficient of thermal expansion.

[0053] It should also be noted that, in combination Figure 3 Because metallic materials possess good mechanical strength, the thickness of the second extension 1212 of the first splice 121 can be appropriately reduced. This increases the distance between the upper surface of the second extension 1212 and the wafer 200 supported on the support disk 130, thereby increasing the depth of the deposition tank 124. This allows the deposition tank 124 of the deposition ring 120 to deposit more deposition material, extends the maintenance interval of the process chamber 100, and reduces the production capacity waste caused by maintaining the process chamber 100.

[0054] In some embodiments, the second splicing body 122 may also be made of metal. This can extend the service life of the second splicing body 122.

[0055] For example, in some embodiments, the material of the first splicing body 121 may include Kovar alloy or aluminum nitride. The material of the second splicing body 122 may include stainless steel, alumina, or titanium alloy. When both the first and second splicing bodies 121 are made of metal, the material of the first splicing body 121 may specifically be Kovar alloy, or an alloy with similar properties to Kovar alloy. The material of the second splicing body 122 may be stainless steel or titanium alloy. Of course, the second splicing body 122 may also be made of other metal materials with lower production costs. These will not be listed here.

[0056] It should be noted that in the solutions provided in this application embodiment, the first splice 121 and the second splice 122 are not both made of Kovar alloy because: currently, there are very few processors capable of processing Kovar alloy, and the processing cycle for complex parts is long. However, by adopting the solution of the system in this application embodiment, the first splice 121 adjacent to the carrier plate 130 can be made of Kovar alloy, and the second splice 122 can be made of other easily processed materials, reducing the manufacturing difficulty of the deposition ring 120 and shortening the supply cycle of the deposition ring 120. Of course, with the advancement of technology, in the future, it is also possible to consider making the entire deposition ring 120 made of Kovar alloy.

[0057] In some embodiments, the distance between the first splice body 121 and the side wall 131 of the carrier plate 130 is smaller than the distance between the second splice body 122 and the side wall 131 of the carrier plate 130. This allows the distance between the second splice body 122 and the first splice body 121 and the carrier plate 130 to be greater, thereby improving the lifespan of the second splice body 122.

[0058] In some embodiments, one end of the second splice 122 near the support portion 132 is supported by the support portion 132. This arrangement, by having the second splice 122 supported by the support portion 132, ensures that one end of the seam between the first splice 121 and the second splice 122 is opposite to the support portion 132, thus mitigating the problem of process gas leakage through the seam between the first splice 121 and the second splice 122.

[0059] It should be noted that this is for reference only. Figure 3 In some embodiments, the first extension 1211 may be spaced at a predetermined distance from the side wall 131 of the support plate 130. In this way, an expansion gap can be reserved between the support plate 130 and the first extension 1211.

[0060] refer to Figure 3In some embodiments, a predetermined gap is also provided between the end face of the support portion 132 facing the second splice body 122 and the adjacent face of the second splice body 122. In this way, an expansion gap can be reserved between the support portion 132 and the second splice body 122.

[0061] refer to Figure 2 and Figure 3 In some embodiments, the upper side of the second extension 1212 has a first surface 1231 at the end away from the carrier plate 130, which bends away from the second splice 122. A second surface 1411, opposite to the first surface 1231, is provided on the portion of the shield 140 near the carrier plate 130. The space between the first surface 1231 and the second surface 1411 forms the first segment of the process gas channel 150.

[0062] For example, the angle between the first surface 1231 and the horizontal plane can be greater than 0 degrees and less than 45 degrees. In this way, by setting the first surface 1231, the length of the process gas channel 150 can be extended, and the first section of the process gas channel 150 can be inclined upward along the direction from the carrier plate 130 to the shield 140, which can make it difficult for the deposited material to enter the process gas channel 150 and block the process gas channel 150.

[0063] refer to Figure 2 and Figure 3 In some embodiments, the circumferential side of the first splice body 121 facing the shield 140 has a third surface 1232. The second splice body 122 may include a third extension 1221, which extends from the underside of the third surface 1232 in a direction away from the first splice body 121, and the surface of the third extension 1221 facing the shield 140 is a fourth surface 1233.

[0064] The shielding member 140 is provided with a fifth surface 1412 that is opposite to the third surface 1232 and the fourth surface 1233 respectively. The space between the third surface 1232 and the fifth surface 1412 forms the second section of the process gas channel 150, and the space between the fourth surface 1233 and the fifth surface 1412 forms the third section of the process gas channel 150.

[0065] For example, in one embodiment, the fourth surface 1233 may be flush with the third surface 1232. It should be noted that the fourth surface 1233 being flush with the third surface 1232 can mean that the line segment formed by the fourth surface 1233 along the axis passing through the first splice body 121 is collinear with the line segment formed by the third surface 1232 along the axis passing through the second splice body 122.

[0066] Combination Figure 2For example, the fourth surface 1233 forms a first vertical line in a cross-section along the axis passing through the first splice 121, and the third surface 1232 forms a second vertical line in a cross-section along the axis passing through the second splice 122, with the first and second vertical lines collinear. In other words, in one embodiment, the second and third segments of the process gas channel 150 can be interconnected vertical channels.

[0067] For example, in a specific implementation, the deposition ring 120 is disposed on the support portion on the side of the carrier disk 130, and the deposition ring 120 is electrically connected to the carrier disk 130. When the carrier disk 130 is an electrostatic chuck structure, the carrier disk 130 is insulated from ground during the semiconductor process, so the deposition ring 120 is also required to be insulated from ground. Therefore, the deposition ring 120 and the shield 140 must be physically isolated, that is, the deposition ring 120 and the shield 140 cannot come into contact.

[0068] In practice, the gap between the deposition ring 120 and the shield 140 (i.e., the process gas channel 150) ensures that the deposition ring 120 and the shield 140 do not come into contact. However, to meet the process requirement of preventing plasma from flowing out of the process gas channel 150, the distance between the near-faced surfaces of the deposition ring 120 and the shield 140 cannot be too large, typically between 1 and 2 millimeters. However, due to machining precision and micro-deformation caused by repeated use of the deposition ring 120, the distance between the near-faced surfaces of the deposition ring 120 and the shield 140 may decrease.

[0069] In related technologies, when there are many vertical channels in the process gas channel 150, and many close-proximity surfaces between the deposition ring 120 and the shield 140, the ground-insulating deposition ring 120 and the shield 140 are prone to contact, causing localized arcing, which can lead to the scrapping of the carrier plate 130 in severe cases. However, this arcing phenomenon is most likely to occur in the vertical channels of the process gas channel 150.

[0070] Combination Figure 3 As can be seen, in the solution provided in this application embodiment, the process gas channel 150 may include only one vertical channel. This can prevent localized arcing between the deposition ring 120 and the laterally adjacent sidewalls of the shield 140. This reduces the possibility of wafer 200 being scrapped due to localized arcing between the deposition ring 120 and the laterally adjacent sidewalls of the shield 140.

[0071] refer to Figure 2 and Figure 3In some embodiments, the second splice 122 may further include a fourth extension 1222. The fourth extension 1222 extends from the end of the fourth surface 1233 away from the first splice 121 in a direction away from the carrier plate 130. The surface of the fourth extension 1222 facing the shield 140 is a sixth surface 1234, and the shield 140 is provided with a seventh surface 1413 opposite to the sixth surface 1234. The space between the sixth surface 1234 and the seventh surface 1413 forms the fourth segment of the process gas channel 150.

[0072] In the embodiments of this application, the first, second, third, and fourth sections of the process gas channel 150 can be connected sequentially. (Combined with...) Figure 3 In one embodiment, the process gas channel 150 may be a Z-shaped channel.

[0073] refer to Figure 3 and Figure 9 In some embodiments, the sixth surface 1234 is provided with a first thermally conductive material layer 161. It should be noted that during the semiconductor process, the deposition ring 120 accumulates a significant amount of heat. The high temperature of the deposition ring 120 can cause edge thermal radiation effects on the wafer 200 on the carrier pad 130, leading to problems such as thermal defects at the edges of the wafer 200. Combined with... Figure 9 By adopting the method of the embodiment of this application, the heat of the deposition ring 120 can be effectively transferred to the shield 140 by the first thermally conductive material layer 161, so as to reduce the heat accumulated in the deposition ring 120 and thereby reduce the possibility of thermal defects at the edge of the wafer 200.

[0074] It should be noted that this is for reference only. Figure 9 In some embodiments, the shield 140 has a cooling medium channel 142. Exemplarily, the cooling medium channel 142 may be located on the shield 140 near the second splice 122. This allows cooling medium to be supplied to the cooling medium channel 142 to dissipate heat from the shield 140, thereby better reducing the heat buildup on the deposition ring 120.

[0075] refer to Figures 4 to 8In some embodiments, a connecting groove 1213 is provided on the side of the second extension 1212 facing the second splice 122. The second splice 122 may include a connecting portion 1223 facing the second extension 1212, and the connecting portion 1223 is spliced ​​and connected to the connecting groove 1213. In this way, the first splice 121 and the second splice 122 can be spliced ​​and connected to each other by the splicing of the connecting portion 1223 and the connecting groove 1213. Thus, the problem of threaded connectors getting stuck due to the different expansion amounts of the first splice 121 and the second splice 122 when heated can be avoided by using threaded connectors.

[0076] refer to Figure 5 and Figure 6 In some embodiments, a hook 1214 is provided on the side wall 131 of the connecting groove 1213 away from the carrier plate 130. (See reference...) Figure 7 A first recess 1224 is provided on the side of the connecting portion 1223 away from the bearing plate 130. (See reference) Figure 4 The hook 1214 is vertically engaged between the upper and lower sidewalls of the first recess 1224.

[0077] refer to Figure 7 and Figure 8 In some embodiments, the side of the connecting portion 1223 away from the carrier plate 130 is further provided with a second recess 1225, which is vertically arranged. The second recess 1225 communicates with the first recess 1224. Exemplarily, the first recess 1224 may be arranged circumferentially along the axis of the second splice body 122. The hook 1214 can move along the second recess 1225 to the first recess 1224.

[0078] In other words, combining Figure 8 During the assembly and connection of the first splicing body 121 and the second splicing body 122, the hook 1214 can first be aligned with the vertically positioned second recess 1225. Then, the first splicing body 121 can be driven downwards, causing the hook 1214 to move along the extending direction of the second recess 1225. When the hook 1214 moves to a position opposite the slot of the first recess 1224, the first splicing body 121 can be rotated, allowing the hook 1214 to move along the extending direction of the first recess 1224, thereby engaging vertically between the upper and lower sidewalls of the first recess 1224. This engagement of the hook 1214 with the first recess 1224 replaces the method of connecting the first splicing body 121 and the second splicing body 122 using threaded connectors, preventing the threaded connectors from jamming.

[0079] Furthermore, the process of disassembling the first splice body 121 and the second splice body 122 that are joined together is the reverse process of assembling the first splice body 121 and the second splice body 122. Therefore, the process of disassembling the first splice body 121 and the second splice body 122 that are joined together will not be explained here.

[0080] refer to Figure 2 and Figure 9 In some embodiments, a second thermally conductive material layer 162 is provided on the surface of the connecting portion 1223 opposite to the bottom of the connecting groove 1213. Thus, during the semiconductor process, heat on the first splice 121 of the deposition ring 120 can be better conducted to the second splice 122 by the second thermally conductive material layer 162. Furthermore, heat from the second splice 122 can be transferred to the shield 140 to reduce the heat accumulation on the deposition ring 120, thereby reducing the likelihood of thermal defects at the edge of the wafer 200. By adopting the solution provided in this application embodiment, the heat transferred to the wafer 200 on the carrier disk 130 can be reduced, thus lowering the likelihood of thermal defects at the edge of the wafer 200.

[0081] In some embodiments, the deposition ring 120 may further include an induction coil 163, which is sandwiched between the first splice 121 and the second splice 122. The induction coil 163 can be used to ensure good electrical contact between the first splice 121 and the second splice 122, eliminating the potential difference between them and thus eliminating the influence of the first and second splices 121 on the ion field distribution, ensuring the stability of the process results.

[0082] It should be noted that, exemplarily, the process chamber 100 can specifically be a PVD process chamber. (See reference...) Figure 1 In the case where the process chamber 100 is a PVD process chamber, the process chamber 100 may further include: a magnetic field generator 171, a cover 172, a gas supply device 173, and a vacuum pump 174. Exemplarily, the magnetic field generator 171 may be a magnetron. A target material may be provided on the side of the cover 172 facing the support plate 130. The gas supply device 173 can supply process gas into the process chamber 100. The vacuum pump 174 can perform vacuuming treatment on the process chamber 100. It should be noted that the shield 140 can serve to separate the process space within the process chamber 100.

[0083] During the physical vapor deposition process, process gas can be supplied to the process chamber 100 via the gas supply device 173. The process gas can flow into the process area through the process gas channel 150 between the deposition ring 120 and the shield 140. The magnetic field generator 171 can generate an electric field in the process area under the action of the input power, which can ionize the process gas into ions. The ions can bombard the target material under the action of the electric field and the magnetic field generated by the magnetic field generator 171. The atoms bombarded from the target material can be deposited onto the surface of the wafer 200 supported on the support disk 130 to form a target thin film on the surface of the wafer 200.

[0084] This application also provides a semiconductor process apparatus. The semiconductor process apparatus provided in this application may include any of the process chambers 100 provided in this application.

[0085] In this manner, in the embodiments of this application, the deposition ring 120 of the process chamber 100 can be assembled from a first splice 121 and a second splice 122. The first splice 121, adjacent to the carrier disk 130, can be made of a material with a low coefficient of thermal expansion, while the second splice 122 can be made of a material with a higher coefficient of thermal expansion than the first splice 121. This allows for a reduction in the manufacturing cost of the deposition ring 120 by rationally selecting the materials of its various parts. Consequently, the manufacturing cost of the process chamber 100, including the deposition ring 120, can be reduced, and the manufacturing cost of the semiconductor process equipment including the process chamber 100 can also be reduced.

[0086] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0087] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A process chamber, used in semiconductor process equipment, characterized in that, include: The cavity (110), and the deposition ring (120), the support plate (130) and the shield (140) disposed in the cavity (110); A support portion (132) is provided on the side wall (131) of the bearing plate (130) near the bottom end, surrounding the bearing plate (130); The deposition ring (120) is supported by the support (132). The deposition ring (120) includes an annular first splice body (121) and an annular second splice body (122), and the first splice body (121) is spliced ​​on top of the second splice body (122). The first splicing body (121) includes an annular first extension (1211) located on the support (132) and extending from the top end to the bottom end of the side wall (131) of the bearing plate (130), and a second extension (1212) extending from the bottom end of the first extension (1211) in a direction away from the side wall (131) of the bearing plate (130); The shielding element (140) is disposed around the first splicing body (121), and the area defined between the first splicing body (121) and the shielding element (140) forms a deposition groove (124); A process gas channel (150) is formed between the opposing surfaces of the first splice body (121) and the shield (140) and between the opposing surfaces of the second splice body (122) and the shield (140); The difference in the coefficient of thermal expansion between the first splice body (121) and the carrier plate (130) is smaller than the difference in the coefficient of thermal expansion between the second splice body (122) and the carrier plate (130).

2. The process chamber according to claim 1, characterized in that, Both the first splicing body (121) and the second splicing body (122) are made of metal.

3. The process chamber according to claim 1, characterized in that, The material of the first splicing body (121) includes Kovar alloy or aluminum nitride, and the material of the second splicing body (122) includes stainless steel, aluminum oxide or titanium alloy.

4. The process chamber according to any one of claims 1-3, characterized in that, The distance between the first splicing body (121) and the side wall (131) of the carrier plate (130) is less than the distance between the second splicing body (122) and the side wall (131) of the carrier plate (130).

5. The process chamber according to claim 4, characterized in that, The end of the second splice (122) near the support (132) is supported by the support (132).

6. The process chamber according to any one of claims 1-3, characterized in that, The upper side of the second extension (1212) has a first surface (1231) that bends away from the second splice (122) at the end away from the carrier plate (130); The shield (140) has a second surface (1411) disposed opposite to the first surface (1231) at a position near the carrier plate (130), and the space between the first surface (1231) and the second surface (1411) forms the first section of the process gas channel (150).

7. The process chamber according to claim 6, characterized in that, The circumferential side of the first splice (121) facing the shield (140) has a third surface (1232). The second splicing body (122) includes a third extension (1221) which extends from the lower side of the third surface (1232) in a direction away from the first splicing body (121), and the surface of the third extension (1221) facing the shield (140) is a fourth surface (1233). The shielding member (140) is provided with a fifth surface (1412) that is opposite to the third surface (1232) and the fourth surface (1233) respectively. The space between the third surface (1232) and the fifth surface (1412) forms the second section of the process gas channel (150), and the space between the fourth surface (1233) and the fifth surface (1412) forms the third section of the process gas channel (150).

8. The process chamber according to claim 7, characterized in that, The fourth surface (1233) is flush with the third surface (1232).

9. The process chamber according to claim 7, characterized in that, The second splicing body (122) also includes a fourth extension (1222), which extends from the end of the fourth surface (1233) away from the first splicing body (121) in a direction away from the support plate (130). The surface of the fourth extension (1222) facing the shield (140) is the sixth surface (1234), and the shield (140) is provided with a seventh surface (1413) opposite to the sixth surface (1234). The space between the sixth surface (1234) and the seventh surface (1413) forms the fourth section of the process gas channel (150). The first section, the second section, the third section and the fourth section of the process gas channel (150) are connected in sequence.

10. The process chamber according to claim 9, characterized in that, The sixth surface (1234) is provided with a first thermally conductive material layer (161).

11. The process chamber according to any one of claims 1-3, characterized in that, The second extension (1212) has a connecting groove (1213) on the side facing the second splice body (122). The second splice body (122) includes a connecting part (1223), which faces the second extension (1212) and is spliced ​​and connected with the connecting groove (1213).

12. The process chamber according to claim 11, characterized in that, The connecting groove (1213) is provided with a hook (1214) on the side wall (131) away from the bearing plate (130), and the connecting part (1223) is provided with a first recess (1224) on the side away from the bearing plate (130). The hook (1214) is engaged vertically between the upper and lower side walls of the first recess (1224).

13. The process chamber according to claim 12, characterized in that, The connecting part (1223) is provided with a second recess (1225) on the side away from the bearing plate (130). The second recess (1225) is arranged vertically and communicates with the first recess (1224). The hook (1214) can move along the second recess (1225) to the first recess (1224).

14. The process chamber according to claim 11, characterized in that, A second thermally conductive material layer (162) is provided on the surface of the connecting part (1223) opposite to the bottom of the connecting groove (1213).

15. The process chamber according to any one of claims 1-3, characterized in that, The shielding component (140) has a cooling medium flow channel (142).

16. The process chamber according to claim 1, characterized in that, The deposition ring (120) also includes an induction coil (163), which is sandwiched between the first splice body (121) and the second splice body (122).

17. A semiconductor process apparatus, characterized in that, Includes the process chamber as described in any one of claims 1 to 16.

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