A multi-crucible growth device and its usage method

Abstract

Embodiments of the present invention provide a multi-crucible growth device and a method of using the same, relating to the technical field of crystal growth. The multi-crucible growth device includes at least two crucibles, a heat insulation support plate, and a rotation device. The heat insulation support plate is provided with at least two mounting holes, and the number of the mounting holes corresponds one-to-one to the number of the crucibles. Each mounting hole is internally provided with a crucible. The rotation device is connected to the heat insulation support plate and is used to drive the heat insulation support plate to rotate, thereby driving at least two crucibles to rotate simultaneously. Compared with the connection method of hoisting the crucible in the prior art, mounting the crucible on the heat insulation support plate can avoid the phenomenon of the crucible falling. Moreover, in the connection method of supporting the bottom of the crucible in the prior art, there is always a position at the bottom of the crucible with poor heat reception, which affects the stability of crystal growth. Mounting the crucible on the heat insulation support plate enables the bottom of the crucible to be uniformly heated, which is beneficial to the temperature control of the crucible and ensures the stability of crystal growth.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular, to a multi-crucible growth device and a usage method thereof. Background Art

[0002] At present, the physical vapor transport method (PVT method) has become the mainstream process technology for growing silicon carbide single crystals. The characteristic of this technology is that in a vacuum environment or an atmosphere environment, polycrystalline silicon carbide raw materials are placed in a sealed cavity formed by a graphite crucible and a crucible cover. The silicon carbide seed wafer is bonded to the inner wall of the crucible cover. By heating the polycrystalline silicon carbide raw materials at the bottom of the graphite crucible and causing them to sublime, silicon carbide single crystals are grown on the silicon carbide seeds.

[0003] In the existing crucible growth equipment, only one silicon carbide single crystal can be grown each time during operation, and the crystal quality needs to be improved. Summary of the Invention

[0004] The present invention provides a multi-crucible growth device and a usage method thereof, which can grow multiple silicon carbide single crystals at one time and effectively improve the crystal quality.

[0005] Embodiments of the present invention can be implemented as follows:

[0006] Embodiments of the present invention provide a multi-crucible growth device, which includes:

[0007] At least two crucibles;

[0008] A heat insulation support plate, on which at least two mounting holes are provided. The number of the mounting holes corresponds to the number of the crucibles one by one, and each of the mounting holes is provided with one of the crucibles;

[0009] A rotating device, which is connected to the heat insulation support plate and is used to drive the heat insulation support plate to rotate, so as to drive at least two of the crucibles to rotate simultaneously;

[0010] Lifting lugs are provided on the outside of the crucible. The lifting lugs are arranged along the circumferential direction of the crucible, and the bottom surfaces of the lifting lugs are in contact with the surface of the heat insulation support plate, so that the crucible is installed in the mounting hole and supported on the heat insulation support plate.

[0011] Optionally, a protrusion or a groove is provided on the bottom surface of the lifting lug, and a groove or a protrusion is provided on the surface of the heat insulation support plate. The protrusion is used to cooperate with the groove for positioning, so as to prevent the crucible from rotating self during the rotation of the heat insulation support plate.

[0012] Optionally, a protrusion is provided on the bottom surface of the lifting lug, and a groove is provided on the surface of the heat insulation support plate. A leveling ball is provided at the bottom of the protrusion, and the leveling ball is used to adjust the position of the crucible.

[0013] Optionally, both the protrusion and the groove are elliptical structures, and the major axis and minor axis of the protrusion are both smaller than the major axis and minor axis of the groove.

[0014] Optionally, the multi-crucible growth device further includes a first heater disposed at the bottoms of at least two of the crucibles for heating the bottoms of at least two of the crucibles simultaneously.

[0015] Optionally, the multi-crucible growth device further includes a second heater disposed at the tops of at least two of the crucibles for heating the tops of at least two of the crucibles simultaneously.

[0016] Optionally, the multi-crucible growth device further includes a moving device connected to the second heater for driving the second heater to approach or move away from the tops of at least two of the crucibles.

[0017] Optionally, the multi-crucible growth device further includes a heat-insulating housing having a heat-insulating cavity, and at least two of the crucibles are all installed in the heat-insulating cavity, and the edge of the heat-insulating support plate contacts the inner wall of the heat-insulating cavity.

[0018] Optionally, the number of the crucibles is six, and the six crucibles are arranged in central symmetry around the center point of the heat-insulating support plate.

[0019] An embodiment of the present invention further provides a method for using a multi-crucible growth device. When working with the multi-crucible growth device, the method for using the multi-crucible growth device includes:

[0020] Controlling the rotation device to start, so that the rotation device drives the heat-insulating support plate to rotate, thereby simultaneously driving at least two of the crucibles to rotate;

[0021] Controlling the first heater to start, so that the first heater heats the bottoms of at least two of the crucibles simultaneously;

[0022] Controlling the second heater to start, and the second heater heats the tops of at least two of the crucibles simultaneously;

[0023] Controlling the moving device to move up and down, so that the moving device drives the second heater to move up and down, thereby approaching or moving away from the tops of the crucibles.

[0024] The beneficial effects of the multi-crucible growth device and the method for using the same according to the embodiments of the present invention include, for example:

[0025] The multi-crucible growth device includes at least two crucibles, a heat-insulating support plate, and a rotating device. The heat-insulating support plate is provided with at least two mounting holes, the number of the mounting holes corresponding to the number of the crucibles one by one. Each of the mounting holes is installed with a crucible. The rotating device is connected to the heat-insulating support plate and is used to drive the heat-insulating support plate to rotate, so as to drive at least two crucibles to rotate simultaneously. An ear is provided outside the crucible, and the ear is arranged along the circumferential direction of the crucible. The ear abuts against the surface of the heat-insulating support plate, so that the crucible is installed in the mounting hole and supported on the heat-insulating support plate. When the multi-crucible growth device is in use, the ears outside at least two crucibles abut against the surface of the heat-insulating support plate, so that the crucibles are installed on the heat-insulating support plate through the mounting holes. Compared with the connection method of hoisting the crucible in the prior art, installing the crucible on the heat-insulating support plate can avoid the phenomenon of the crucible falling. Moreover, the connection method of supporting the bottom of the crucible in the prior art will cause a position at the bottom of the crucible to be poorly heated all the time, thus affecting the stability of crystal growth. Installing the crucible on the heat-insulating support plate enables the bottom of the crucible to be heated evenly, which is beneficial to the temperature control of the crucible and ensures the stability of crystal growth. In addition, the rotating device can drive the heat-insulating support plate to rotate, so as to drive at least two crucibles to rotate together at the same time, enabling multiple crystals to be grown in each operation and improving the work efficiency.

[0026] The usage method of the multi-crucible growth device uses the multi-crucible growth device to work. The usage method of the multi-crucible growth device includes: controlling the rotating device to start, so that the rotating device drives the heat-insulating support plate to rotate, so as to drive at least two crucibles to rotate simultaneously; controlling the first heater to start, so that the first heater heats the bottoms of at least two crucibles simultaneously; controlling the second heater to start, and the second heater heats the tops of at least two crucibles simultaneously; controlling the moving device to move up and down, so that the moving device drives the second heater to move up and down, so as to approach or move away from the tops of the crucibles. The usage method of the multi-crucible growth device can ensure the stability of crystal growth during use, enable multiple crystals to be grown in each operation, and improve the work efficiency. Brief Description of the Drawings

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and thus should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0028] Figure 1 It is a schematic structural diagram of the multi-crucible growth device provided in this embodiment;

[0029] Figure 2 Schematic diagram of the protrusions and grooves provided in this embodiment;

[0030] Figure 3 Schematic diagram of the protrusions, leveling balls, and grooves provided in this embodiment.

[0031] Icons: 10 - crucible; 20 - heat insulation support plate; 30 - rotating device; 31 - rotating connecting rod; 40 - lifting lug; 50 - protrusion; 51 - leveling ball; 60 - groove; 70 - first heater; 80 - second heater; 90 - moving device; 100 - heat preservation housing; 1000 - multi - crucible growth equipment. Detailed implementation manners

[0032] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0033] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0034] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0035] In the description of the present invention, it should be noted that if terms such as "upper", "lower", "inner", "outer", etc. are used to indicate the orientation or positional relationship, it is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the present invention is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation of the present invention.

[0036] In addition, if terms such as "first", "second", etc. are used only for distinguishing descriptions, they cannot be understood as indicating or implying relative importance.

[0037] It should be noted that, without conflict, the features in the embodiments of the present invention can be combined with each other.

[0038] At present, the physical vapor transport method (PVT method) has become the mainstream process technology for growing single-crystalline silicon carbide. The characteristic of this technology is that in a vacuum environment or an atmosphere environment, polycrystalline silicon carbide raw materials are placed in a sealed cavity formed by a graphite crucible and a crucible cover. The silicon carbide seed wafer is bonded to the inner wall of the crucible cover. By heating the polycrystalline silicon carbide raw materials at the bottom of the graphite crucible and sublimating them, single-crystalline silicon carbide is grown on the silicon carbide seed.

[0039] When the crucible growth equipment in the related technology works, only one single-crystalline silicon carbide can be grown each time, and the crystal quality needs to be improved.

[0040] Please refer to Figures 1 - 3 , this embodiment provides a multi-crucible growth equipment 1000, which can effectively improve the above-mentioned technical problems, can grow multiple single-crystalline silicon carbides at one time, and effectively improves the crystal quality.

[0041] In this embodiment, the multi-crucible growth equipment 1000 is used for growing single-crystalline silicon carbide. In other embodiments, the multi-crucible growth equipment 1000 can also be used for growing single-crystalline gallium carbide, or for sintering and synthesizing silicon carbide raw materials. No specific limitation is made here.

[0042] Specifically, the multi-crucible growth equipment 1000 includes at least two crucibles 10, a heat insulation support plate 20, and a rotating device 30. At least two mounting holes are provided on the heat insulation support plate 20. The number of mounting holes corresponds one-to-one to the number of crucibles 10. Each crucible 10 is installed in each mounting hole. The rotating device 30 is connected to the heat insulation support plate 20 and is used to drive the heat insulation support plate 20 to rotate, thereby driving at least two crucibles 10 to rotate simultaneously.

[0043] In this embodiment, a lifting lug 40 is provided outside the crucible 10. The lifting lug 40 is arranged along the circumferential direction of the crucible 10. The lifting lug 40 abuts against the surface of the heat insulation support plate 20, so that the crucible 10 is installed in the mounting hole and is supported on the heat insulation support plate 20. Among them, the lifting lug 40 is of an annular structure, and the inner side of the lifting lug 40 is integrally connected to the outer wall of the crucible 10. When the crucible 10 is inserted into the mounting hole, the bottom surface of the lifting lug 40 abuts against the surface of the heat insulation support plate 20, thereby supporting the crucible 10 on the heat insulation support plate 20 to achieve assembly.

[0044] Crucible devices in the prior art generally adopt two assembly methods. One is to hoist the crucible above the heater through a hoisting structure. The structure of the hoisting structure is relatively complex, which is likely to increase production costs and is also prone to damage. In addition, after setting up the hoisting structure, due to limited upper space, it will be more difficult to set up structures such as heating devices. The other is to support the bottom of the crucible through a support structure, so as to install the crucible above the heater. Since the heater needs to uniformly heat the bottom of the crucible, the connection position between the bottom of the crucible and the support structure is blocked, resulting in poor heating effect at the connection position between the bottom of the crucible and the support structure, thus affecting the crystal quality. In order to avoid the above technical problems, when the multi-crucible growth device 1000 provided in this embodiment is in use, the crucible 10 is installed on the heat insulation support plate 20 through the lifting lugs 40. There is no connection structure at the top and bottom of the crucible 10, making the crucible 10 receive heat more evenly, which is beneficial to the temperature control inside the crucible 10. At the same time, the heat insulation support plate 20 can isolate the upper and lower parts of the crucible 10, reduce the heat loss in the high-temperature heating area, improve the heat utilization rate, facilitate the formation of the temperature gradient of the crucible 10, ensure the stability of crystal growth, and thus guarantee the crystal quality.

[0045] Moreover, the heat insulation support plate 20 in this embodiment rotates through the rotating device 30, thereby driving at least two crucibles 10 to rotate together. At least two crucibles 10 can be heated centrally, and a silicon carbide single crystal can grow in each crucible 10, thus improving the production efficiency.

[0046] It can be understood that the number of crucibles 10 can be two, three or even more, and no specific limitation is made here. In this embodiment, the number of crucibles 10 is six, and the six crucibles 10 are centrally symmetrically arranged along the center point of the heat insulation support plate 20, so as to facilitate the consistent process conditions during the rotation of the six crucibles 10 following the heat insulation support plate 20, thereby reducing the growth deviation of the silicon carbide crystals in each crucible 10.

[0047] In this embodiment, the heat insulation support plate 20 drives at least two crucibles 10 to revolve together. During the revolution, the crucibles 10 will have a self-rotation phenomenon. In order to avoid the self-rotation of the crucibles 10, in this embodiment, the bottom surface of the lifting lug 40 is provided with a protrusion 50 or a groove 60, and the surface of the heat insulation support plate 20 is provided with a groove 60 or a protrusion 50. The protrusion 50 is used to cooperate with the groove 60 for positioning, so as to prevent the crucible 10 from self-rotating during the rotation following the heat insulation support plate 20. It can be understood that through the cooperation of the protrusion 50 and the groove 60, the crucible 10 is limited, so as to avoid the self-rotation of the crucible 10 relative to the heat insulation support plate 20.

[0048] In this embodiment, a protrusion 50 is provided on the bottom surface of the lifting lug 40, and a groove 60 is provided on the surface of the heat insulation support plate 20. More than two protrusions 50 are provided, and a leveling ball 51 is provided at the bottom of the protrusion 50. The leveling ball 51 is used to adjust the position of the crucible 10. Among them, since the crucible 10 is supported on the heat insulation support plate 20 through the lifting lug 40, due to reasons such as the unevenness of the heat insulation support plate 20 and the unevenness of the lifting lug 40, the crucible 10 is not horizontally supported on the heat insulation support plate 20 through the lifting lug 40. During the rotation process, it is more likely to be subjected to force impact, resulting in damage to the crucible 10 or the lifting lug 40. In severe cases, the lifting lug 40 cannot be separated from the crucible 10, and the crucible 10 has a risk of falling. By providing the leveling ball 51 at the bottom of the protrusion 50, multiple protrusions 50 can rollingly support on the heat insulation support plate 20, thereby realizing a small-range automatic adjustment of the position of the crucible 10, making the support of the crucible 10 more horizontal, and reducing the possibility of the crucible 10, especially the lifting lug 40 provided around the crucible 10, being subjected to force impact during the rotation process.

[0049] Furthermore, in order to enable the protrusion 50 and the groove 60 to be smoothly engaged, the lifting lug 40 is also provided with a guiding groove, which is inclined, so as to guide the protrusion 50 into the groove 60 for engagement. Among them, the guiding groove is provided at the upper part outside the protrusion 50. When the lifting lug 40 is supported on the heat insulation support plate 20, the protrusion 50 can smoothly enter the groove 60 along the guiding direction of the guiding groove, thereby realizing the positioning of the crucible 10.

[0050] Preferably, both the protrusion 50 and the groove 60 are elliptical structures, and the major axis and minor axis of the protrusion 50 are both smaller than the major axis and minor axis of the groove 60. That is to say, the elliptical shape of the protrusion 50 is smaller than the elliptical shape of the groove 60. When the protrusion 50 and the groove 60 are engaged, there is a gap between the protrusion 50 and the groove 60, thereby preventing the protrusion 50 and the groove 60 from expanding due to the influence of high temperature, resulting in the protrusion 50 and the groove 60 being bonded together and difficult to separate; moreover, when the crucible 10 has a tendency to rotate, the outer edge of the protrusion 50 will abut against the inner wall of the groove 60, thereby preventing the crucible 10 from rotating, avoiding phenomena such as asynchronous rotation and uneven heating between crucibles 10, and when there is a gap between the protrusion 50 and the groove 60, it also provides an adjustment space for the self-adjustment of the position of the crucible 10.

[0051] It should be noted that the rotating device 30 includes a rotation driving member and a rotating connecting rod 31. The rotating connecting rod 31 is arranged in the vertical direction. The bottom end of the rotating connecting rod 31 is connected to the rotation driving member, and the top end of the rotating connecting rod 31 is connected to the center point of the bottom surface of the heat insulation support plate 20. The rotating connecting rod 31 rotates under the drive of the rotation driving member, thereby driving the heat insulation support plate 20 to rotate, so as to realize the synchronous rotation of at least two crucibles 10. When multiple crucibles 10 respectively rotate to grow silicon carbide crystals through the rotating device 30, since the rotating device 30 is independently arranged, it is difficult to ensure that the rotations of the respective crucibles 10 are consistent. Therefore, the rotations of the multiple crucibles 10 may be asynchronous, and the heat uniformity, gas flow uniformity, etc. cannot be guaranteed to be exactly the same. When the silicon carbide crystal growth process conditions are uniformly controlled, the conditions in each crucible 10 cannot all be guaranteed to be the optimal control conditions, and it is easy to cause deviations in the crystal growth in each crucible 10, increasing the risk of crystal quality problems. In the present embodiment, the rotating connecting rod 31 rotates under the drive of the rotation driving member, thereby driving the heat insulation support plate 20 to rotate, so as to realize the synchronous rotation of at least two crucibles 10, which can avoid the above problems, thereby reducing the process control difficulty and improving the crystal quality during the production of multiple crucibles 10.

[0052] Specifically, the rotation driving member is a motor.

[0053] It can be understood that the multi-crucible growth device 1000 further includes a first heater 70. The first heater 70 is arranged at the bottom of at least two crucibles 10 and is used to heat the bottoms of at least two crucibles 10 simultaneously. Specifically, the heat insulation support plate 20 rotates relative to the first heater 70 under the drive of the rotating device 30, so that at least two crucibles 10 rotate relative to the first heater 70 simultaneously, ensuring that each crucible 10 can be heated evenly.

[0054] It should also be noted that the multi-crucible growth device 1000 further includes a second heater 80 and a moving device 90. The second heater 80 is arranged at the top of at least two crucibles 10 and is used to heat the tops of at least two crucibles 10 simultaneously. The moving device 90 is connected to the second heater 80 and is used to drive the second heater 80 to approach or move away from the tops of at least two crucibles 10.

[0055] Specifically, the moving device 90 can drive the second heater 80 to move up and down in the vertical direction, so that the second heater 80 approaches or moves away from the tops of at least two crucibles 10. By moving the second heater 80 up and down to adjust the heating amount of the upper part of the crucible 10, the temperature of the crucible 10 in the axial direction can be adjusted, thereby accurately controlling the temperature inside the crucible 10. Moreover, the second heater 80 is also beneficial to reducing the temperature gradient of the top of the crucible 10 in the horizontal direction. It can be understood that the crucible 10 is supported on the heat insulation support plate 20, which is more conducive to arranging the movable second heater 80.

[0056] In addition, the multi-crucible growth device 1000 further includes a heat-insulating housing 100. The heat-insulating housing 100 has a heat-insulating cavity. At least two crucibles 10 are installed in the heat-insulating cavity, and the edge of the heat-insulating support plate 20 contacts the inner wall of the heat-insulating cavity. Among them, the heat-insulating support plate 20 can rotate relative to the heat-insulating housing 100, and at least two crucibles 10 rotate in the heat-insulating housing 100, especially rotate in the rotation direction. Each crucible 10 has an equal chance of being heated, realizing uniform heating of the crucibles 10, which is more conducive to improving the gas flow uniformity in the crucibles 10, ensuring that the process conditions of each crucible 10 are consistent, thereby ensuring the stability of crystal growth and the crystal quality.

[0057] An embodiment of the present invention further provides a method for using a multi-crucible growth device. The multi-crucible growth device 1000 is used for work. The method for using the multi-crucible growth device includes:

[0058] S1: Control the rotation device 30 to start, so that the rotation device 30 drives the heat-insulating support plate 20 to rotate, thereby driving at least two crucibles 10 to rotate simultaneously.

[0059] Specifically, the crucibles 10 are sequentially transported to the positions of the mounting holes of the heat-insulating support plate 20. The lugs 40 of the crucibles 10 are supported on the heat-insulating support plate 20, and the protrusions 50 are placed in the grooves 60. Then, the rotation device 30 is started to work. The rotation connecting rod 31 of the rotation device 30 drives the heat-insulating support plate 20 to revolve, and at least two crucibles 10 follow the heat-insulating support plate 20 to revolve together.

[0060] S2: Control the first heater 70 to start, so that the first heater 70 heats the bottoms of at least two crucibles 10 simultaneously.

[0061] S3: Control the second heater 80 to start, and the second heater 80 heats the tops of at least two crucibles 10 simultaneously.

[0062] S4: Control the moving device 90 to move up and down, so that the moving device 90 drives the second heater 80 to move up and down, thereby approaching or moving away from the tops of the crucibles 10.

[0063] In summary, the embodiments of the present invention provide a multi-crucible growth device 1000 and a usage method thereof. The multi-crucible growth device 1000 includes at least two crucibles 10, a heat insulation support plate 20, and a rotating device 30. The heat insulation support plate 20 is provided with at least two mounting holes, and the number of the mounting holes corresponds to the number of the crucibles 10 one by one. Each mounting hole is internally provided with a crucible 10. The rotating device 30 is connected to the heat insulation support plate 20 and is used to drive the heat insulation support plate 20 to rotate, thereby simultaneously driving at least two crucibles 10 to rotate. When the multi-crucible growth device 1000 is in use, at least two crucibles 10 are both mounted on the heat insulation support plate 20 through the mounting holes. Compared with the connection method of hoisting the crucible 10 in the prior art, mounting the crucible 10 on the heat insulation support plate 20 can avoid the phenomenon of the crucible 10 falling. Moreover, the connection method of supporting the bottom of the crucible 10 in the prior art will cause a position at the bottom of the crucible 10 to always have poor heat reception, thereby affecting the stability of crystal growth. Mounting the crucible 10 on the heat insulation support plate 20 enables the bottom of the crucible 10 to be uniformly heated, which is beneficial to the temperature control of the crucible 10 and ensures the stability of crystal growth. In addition, the rotating device 30 can drive the heat insulation support plate 20 to rotate, thereby simultaneously driving at least two crucibles 10 to rotate together, enabling multiple crystals to be grown in each operation and improving the work efficiency.

[0064] The usage method of the multi-crucible growth device uses the multi-crucible growth device 1000 to work. The usage method of the multi-crucible growth device includes: controlling the rotating device 30 to start, so that the rotating device 30 drives the heat insulation support plate 20 to rotate, thereby simultaneously driving at least two crucibles 10 to rotate; controlling the first heater 70 to start, so that the first heater 70 simultaneously heats the bottoms of at least two crucibles 10; controlling the second heater 80 to start, and the second heater 80 simultaneously heats the tops of at least two crucibles 10; controlling the moving device 90 to move up and down, so that the moving device 90 drives the second heater 80 to move up and down, thereby approaching or moving away from the tops of the crucibles 10. The usage method of the multi-crucible growth device 1000 can ensure the stability of crystal growth during use, enable multiple crystals to be grown in each operation, and improve the work efficiency.

[0065] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A multi-crucible growth device, characterized in that: include: At least two crucibles (10); A heat-insulating support plate (20), wherein at least two mounting holes are provided on the heat-insulating support plate (20), the number of the mounting holes corresponding to the number of the crucibles (10), the crucible (10) being mounted in each mounting hole, and the heat-insulating support plate (20) can insulate the upper and lower parts of the crucible (10), thereby reducing heat loss in the high-temperature heating area; a rotating device (30), the rotating device (30) being connected to the heat-insulating support plate (20) and being used to drive the heat-insulating support plate (20) to rotate, thereby driving at least two of the crucibles (10) to rotate simultaneously; A lifting ear (40) is provided on the outside of the crucible (10), the lifting ear (40) is arranged along the circumferential direction of the crucible (10), and the lifting ear (40) abuts against the surface of the heat-insulating support plate (20), so that the crucible (10) is installed in the installation hole and supported on the heat-insulating support plate (20); The bottom surface of the lifting ear (40) is provided with a protrusion (50) or a groove (60), and the surface of the heat-insulating support plate (20) is provided with a groove (60) or a protrusion (50), and the protrusion (50) is used to cooperate with the groove (60) for positioning, thereby preventing the crucible (10) from rotating while following the heat-insulating support plate (20); The multi-crucible growth device (1000) further comprises a first heater (70), wherein the first heater (70) is arranged at the bottom of at least two of the crucibles (10) and is used to heat the bottoms of at least two of the crucibles (10) simultaneously; The multi-crucible growth device (1000) further comprises a second heater (80), wherein the second heater (80) is arranged on the top of at least two of the crucibles (10) and is used to heat the tops of at least two of the crucibles (10) simultaneously; The bottom surface of the lifting ear (40) is provided with a protrusion (50), the surface of the heat-insulating support plate (20) is provided with a groove (60), and the bottom of the protrusion (50) is provided with a leveling ball (51), and the leveling ball (51) is used to adjust the position of the crucible (10); The protrusion (50) and the groove (60) are both elliptical structures, and the major axis and minor axis of the protrusion (50) are both smaller than the major axis and minor axis of the groove (60).

2. The multi-crucible growth equipment according to claim 1, characterized in that: The multi-crucible growth device (1000) further comprises a moving device (90), wherein the moving device (90) is connected to the second heater (80) and is used to drive the second heater (80) to move closer to or away from the tops of at least two of the crucibles (10).

3. The multi-crucible growth equipment according to claim 1, characterized in that: The multi-crucible growth device (1000) further comprises a heat-insulating shell (100), wherein the heat-insulating shell (100) has a heat-insulating cavity, at least two crucibles (10) are installed in the heat-insulating cavity, and the edge of the heat-insulating support plate (20) is in contact with the inner wall of the heat-insulating cavity.

4. The multi-crucible growth equipment according to claim 1, characterized in that: The number of the crucibles (10) is six, and the six crucibles (10) are centrally symmetrically arranged along the center point of the heat-insulating support plate (20).

5. A method for using a multi-crucible growth device, characterized in that: Using the multi-crucible growth device according to any one of claims 1 to 4 to work, the method of using the multi-crucible growth device comprises: Controlling the rotation device (30) to start, so that the rotation device (30) drives the heat insulation support plate (20) to rotate, thereby driving at least two crucibles (10) to rotate at the same time; The controller starts the first heater (70), so that the first heater (70) heats the bottoms of at least two crucibles (10) at the same time; Controlling the second heater (80) to start, the second heater (80) heating the tops of at least two of the crucibles (10) at the same time; The moving device (90) is controlled to move up and down, so that the moving device (90) drives the second heater (80) to move up and down, thereby approaching or moving away from the top of the crucible (10).

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