A high-temperature MEMS wall sensor, its packaging method, and its application.

Abstract

This invention relates to a high-temperature MEMS wall sensor, its packaging method, and its applications. The sensor includes a housing with an oriented structure and internal / external threads, a stepped MEMS chip, an insulating support welded to the substrate layer of the MEMS chip within a welding space, spring pins in floating contact with the device layer of the MEMS chip, elastic fasteners for fixing the insulating support, high-temperature wires for signal transmission, and a circular plug for power supply. The high-temperature MEMS wall sensor is packaged according to the positional relationship of each component. The welding method employed in this disclosure improves the reliability of the connection between the MEMS chip and the support structure at high temperatures, enhances the reliability of electrical signal transmission from the MEMS chip, achieves electrical insulation between components, enables flush mounting of the MEMS chip to the wall, and secures the sensor to the wall, reducing problems such as loosening and breakage caused by vibration, and improving the sensor's adaptability to vibration environments.

Description

Technical Field

[0001] This invention belongs to the field of MEMS sensing technology, and relates to a high-temperature MEMS wall sensor, its packaging method, and its application. Background Technology

[0002] Compared to traditional machined sensors, MEMS (Micro Electro-Mechanical System) sensors are much smaller, with feature sizes ranging from 1µm to 10mm. This small size brings advantages such as light weight, low power consumption, low inertia, high resonant frequency, and short response time, making them promising for high-sensitivity, high-dynamic measurement of physical quantities like frictional resistance, pressure, and vibration on aircraft and aero-engine surfaces. However, aircraft and aero-engine surfaces are complex and harsh environments characterized by strong vibration, high temperature, and high hysteresis, requiring sensor packaging structures to withstand temperatures exceeding 600°C. The MEMS sensor's sensitive chip is made of semiconductor material and is extremely small, making it difficult to fix the chip flush with the surface using traditional adhesive or metal welding methods. Furthermore, the complex and harsh environment places stringent demands on the reliable extraction of sensor signals and the vibration resistance of the packaging.

[0003] In related technologies, SiC-based MEMS chips are typically bonded to ALN thermally conductive carriers using low-temperature bonding technology, and the electrodes and conductive terminals of the chip are electrically connected by gold wire bonding, thereby increasing the operating temperature of the MEMS sensor. However, the low-temperature bonding technology will fail when faced with temperatures above 600°C, causing the chip to detach. When the operating temperature is too high, the gold wire melts, leading to electrical connection failure. The MEMS chip cannot be reliably fixed to the support structure in an environment above 600°C. The electrical connection has low temperature tolerance, resulting in poor signal transmission reliability. Furthermore, the chip cannot be installed flush with the wall surface. When in a vibrating working environment, this can lead to problems such as loosening or instantaneous breakage of the product, indicating poor environmental vibration adaptability.

[0004] The following technical problems exist in the relevant technologies:

[0005] Related technologies employ low-temperature bonding techniques to bond SiC-based MEMS chips to ALN thermally conductive carriers, and gold wire bonding to electrically connect the chip's electrodes and conductive terminals. These two methods can raise the operating temperature of MEMS sensors to 500°C. However, when facing temperatures above 600°C, the low-temperature bonding technology fails, causing the chip to detach, while the gold wires melt, leading to electrical connection failure. Furthermore, the encapsulation methods used in these technologies cannot be fixed to walls, failing to consider issues such as flush mounting of the chip with the wall and environmental vibration adaptability. The MEMS chip cannot be reliably fixed to the support structure in environments above 600°C, the electrical connection has low temperature tolerance, and most encapsulation structures do not consider locking to the mounting wall or flush mounting with the wall. Summary of the Invention

[0006] Technical problems to be solved

[0007] To avoid the shortcomings of existing technologies, this invention proposes a high-temperature MEMS wall sensor, its packaging method, and its application, which to some extent solves the problems of MEMS chips not being reliably fixed to the support structure at high temperatures, poor signal transmission reliability, and poor environmental vibration adaptability.

[0008] Technical solution

[0009] A high-temperature MEMS wall sensor is characterized by comprising a housing 1, a MEMS chip 2, an insulating support 3, a spring pin 4, an elastic fastener 5, a high-temperature wire 6, and a plug 7; the top of the housing 1 is an directional head 11, the middle of which has an irregularly shaped receiving cavity, and the lower part of the directional head 11 has an external thread structure connected to an internal thread structure; the insulating support 3 is placed inside the cavity of the housing 1 at the lower part of the directional head 11, the upper end of the insulating support 3 has a boss shape that matches the receiving cavity, and the lower end has an elastic fastener 5 connected to the internal thread structure; the MEMS chip 2 is placed inside the receiving cavity, and the lower end of the MEMS chip 2 floats in contact with the spring pin 4; the spring pin 4 passes through the insulating support 3 and is connected to the high-temperature wire 6, which is connected to the plug 7.

[0010] The width of the cross-section of the orientation head 11 is greater than the width of the cross-section of the screw. It has an elliptical countersunk head structure and is used for the orientation and installation of the high-temperature MEMS wall sensor on the wall.

[0011] The MEMS chip 2 includes a device layer and a substrate layer. The substrate layer is made of a transparent material and has an area larger than the device layer, which is used to form a stepped structure to provide welding space.

[0012] The MEMS chip 2 has multiple through holes on its substrate layer and multiple blind holes bonded to the device layer, which are used to allow the end of the spring pin with a smaller circumference to float and contact the device layer through the blind holes for signal transmission.

[0013] The insulating support 3 includes a first ceramic substrate 31, a second ceramic substrate 32, and a third ceramic substrate 33 arranged in series;

[0014] The first ceramic substrate is welded to one end of the base layer of the MEMS chip 2. The first ceramic substrate includes a boss and a first limiting hole. The cross-sectional area of ​​the boss is the same as the cross-sectional area of ​​the mounting cavity of the boss, which is used to determine the mounting direction of the MEMS chip. The first limiting hole is located inside the first ceramic substrate and its horizontal plane is lower than the horizontal plane of the boss, which is used to limit the position height of the end with the smaller circumference of the spring pin.

[0015] The second ceramic substrate, the horizontal plane of which the second ceramic substrate is located is lower than the horizontal plane of the first ceramic substrate, includes multiple fixing holes, which are evenly opened inside the second ceramic substrate;

[0016] The third ceramic substrate is located at a horizontal plane lower than that of the second ceramic substrate. The third ceramic substrate includes a second limiting hole for limiting the height of the longer end of the spring needle.

[0017] The first ceramic substrate, the second ceramic substrate, and the third ceramic substrate are connected to each other, and the number and position of the first limiting hole, the fixing hole, and the second limiting hole correspond to the position of the blind hole of the MEMS chip, which is used to fix the spring pin.

[0018] The spring pin 4 includes a pin 41, a spring 42, a claw 43, a pin body 44, and a lead 45 connected in sequence; the spring and the claw are fitted together to make the floating contact between the spring pin and the MEMS chip slightly interference; the circumference of the lead is greater than the circumference of the pin, one end of the lead is fitted with the pin body, and the other end is fixedly connected to the high-temperature wire.

[0019] The plug is a circular plug, and the outer diameter of the circular plug is smaller than the inner diameter of the external thread of the housing, for installation with the mounting interface.

[0020] A packaging method for a high-temperature MEMS wall sensor according to any one of claims 1 to 8, characterized in that:

[0021] S1. The MEMS chip is formed into a composite by ultrafast laser micro-welding to the first ceramic substrate;

[0022] S2. The high-temperature wire extending from the round plug is passed through the fixing holes of the elastic fastener and the third ceramic substrate in sequence, and the high-temperature wire is crimped and fixed to the pin of the spring pin.

[0023] S3. Determine the mounting direction of the assembly based on the shape of the first ceramic substrate and the MEMS chip, and use high-temperature adhesive to fix the relative position of the assembly and the housing.

[0024] S4. Insert the spring of the spring pin into the insert pin and install it into the assembly;

[0025] S5. The second ceramic substrate, the pin of the spring pin, and the third ceramic substrate are sequentially installed and fixed by rotating elastic fasteners to complete the packaging of the high-temperature MEMS wall sensor.

[0026] A method of using a high-temperature MEMS wall sensor according to any one of claims 1 to 8, characterized in that: it is used for working at high temperatures above 600 degrees Celsius and needs to be fixed on a wall surface to ensure stable signal transmission under strong vibration, which greatly improves the reliability of signal transmission at high temperatures.

[0027] Beneficial effects

[0028] This invention discloses a high-temperature MEMS wall sensor, its packaging method, and its applications, relating to the field of MEMS sensing technology. The high-temperature MEMS wall sensor includes a housing with an oriented structure and internal / external threads, a stepped MEMS chip, an insulating support welded to the substrate layer of the MEMS chip within a welding space, spring pins in floating contact with the device layer of the MEMS chip, elastic fasteners for fixing the insulating support, high-temperature wires for signal transmission, and a circular plug for power supply, thus completing the packaging of the high-temperature MEMS wall sensor according to the positional relationship of each component. The welding method employed in this disclosure improves the reliability of the connection between the MEMS chip and the support structure at high temperatures, enhances the reliability of the MEMS chip's electrical signal transmission, achieves electrical insulation between components, and enables flush mounting of the MEMS chip to the wall, fixing the sensor to the wall, reducing problems such as loosening and breakage caused by vibration, and improving the sensor's adaptability to vibration environments. Attached Figure Description

[0029] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0030] Figure 1This schematically illustrates a structural diagram of a high-temperature MEMS wall sensor according to an exemplary embodiment of the present disclosure.

[0031] Figure 2 A perspective view of a MEMS chip in an exemplary embodiment of this disclosure is shown schematically.

[0032] Figure 3 A bottom view of a MEMS chip in an exemplary embodiment of this disclosure is shown schematically.

[0033] Figure 4 A top view of the housing in an exemplary embodiment of this disclosure is shown schematically.

[0034] Figure 5 The schematic illustration shows a front view of the housing in an exemplary embodiment of this disclosure.

[0035] Figure 6 A cross-sectional view of the housing in an exemplary embodiment of this disclosure is shown schematically.

[0036] Figure 7 The schematic diagram shows a front view of the first ceramic substrate in an exemplary embodiment of the present disclosure.

[0037] Figure 8 A top view of the first ceramic substrate in an exemplary embodiment of the present disclosure is shown schematically.

[0038] Figure 9 A cross-sectional view of a first ceramic substrate in an exemplary embodiment of the present disclosure is shown schematically.

[0039] Figure 10 A top view of the second ceramic substrate in an exemplary embodiment of the present disclosure is shown schematically.

[0040] Figure 11 A cross-sectional view of the second ceramic substrate in an exemplary embodiment of the present disclosure is shown schematically.

[0041] Figure 12 A top view of a third ceramic substrate in an exemplary embodiment of this disclosure is shown schematically.

[0042] Figure 13 A cross-sectional view of a third ceramic substrate in an exemplary embodiment of the present disclosure is shown schematically.

[0043] Figure 14 A perspective view of a spring pin in an exemplary embodiment of the present disclosure is shown schematically.

[0044] Figure 15 A cross-sectional view of a spring pin in an exemplary embodiment of the present disclosure is shown schematically.

[0045] Figure 16A perspective view of a resilient fastener in an exemplary embodiment of this disclosure is shown schematically.

[0046] Figure 17 A cross-sectional view of a resilient fastener in an exemplary embodiment of the present disclosure is shown schematically.

[0047] Figure 18 The schematic diagram illustrates the crimping of a high-temperature wire with a spring pin in an exemplary embodiment of the present disclosure.

[0048] Figure 19 This is a schematic diagram of the welding between the MEMS chip and the first ceramic substrate in an exemplary embodiment of the present invention.

[0049] Figure 20 This is a schematic diagram showing the high-temperature wire passing through the elastic fastener and the third ceramic substrate in an exemplary embodiment of the present invention.

[0050] Figure 21 This is a schematic diagram illustrating the crimping of a high-temperature wire to a spring pin in an exemplary embodiment of the present invention.

[0051] Figure 22 This is a schematic diagram showing the installation of the various components of the spring pin in an exemplary embodiment of the present invention;

[0052] Figure 23 This is a schematic diagram of the completed sensor packaging structure in an exemplary embodiment of the present invention;

[0053] In the accompanying drawings, the same or corresponding reference numerals indicate the same or corresponding parts.

[0054] The attached figures are labeled as follows:

[0055] 1. Outer shell;

[0056] 11. Directional head; 12. Screw;

[0057] 111. Convex cavity; 121. External thread; 122. Internal thread;

[0058] 2. MEMS chips;

[0059] 21. Device layer; 22. Substrate layer; 23. Blind via;

[0060] 3. Insulating support components;

[0061] 31. First ceramic matrix; 32. Second ceramic matrix; 33. Third ceramic matrix

[0062] 311, Boss; 312, First limiting hole; 321, Fixing hole; 331, Second limiting hole;

[0063] 4. Spring needle;

[0064] 41. Pin; 42. Spring; 43. Spring claw; 44. Pin body; 45. Lead;

[0065] 5. Flexible fasteners;

[0066] 51. Resilient lock nut; 511. Groove;

[0067] 6. High-temperature conductors;

[0068] 7. Plug. Detailed Implementation

[0069] The present invention will now be further described in conjunction with the embodiments and accompanying drawings:

[0070] A high-temperature MEMS wall sensor, comprising:

[0071] The housing includes a directional head and a screw. The width of the cross-section of the directional head is greater than the width of the cross-section of the screw. The directional head has an irregularly shaped receiving cavity inside. The screw is fixedly connected to the directional head and includes an external thread and an internal thread. The external thread is located on the outer side near the end of the directional head, and the internal thread is located on the inner side away from the end of the directional head.

[0072] The MEMS chip is inserted into the cavity of the orientation head, and the horizontal plane of the MEMS chip is the same as the horizontal plane of the end of the orientation head away from the screw. The width of the cross-section of the MEMS chip is adapted to the width of the cavity. It includes a device layer and a substrate layer. The substrate layer is a transparent material and has a larger area than the device layer. It is used to form a stepped structure to provide welding space.

[0073] An insulating support component has a cross-sectional area at one end that is the same as the cross-sectional area of ​​the accommodating cavity inside the orientation head, and is welded to the end of the MEMS chip's substrate layer away from the device layer within the welding space.

[0074] A spring pin is inserted inside the insulating support, with the smaller circumference end penetrating the base layer and making floating contact with the device layer. The length of the spring pin is less than the length of the insulating support.

[0075] The elastic fastener abuts against the end of the insulating support that is away from the MEMS chip. The horizontal plane of the elastic fastener is the same as the horizontal plane of the internal thread of the screw, and it is engaged with the internal thread of the screw to fix the insulating support.

[0076] A high-temperature wire, one end of which is electrically connected to the longer end of the spring needle, is used for signal transmission;

[0077] The round plug is electrically connected to the end of the high-temperature wire away from the spring pin for power input and signal transmission.

[0078] In one exemplary embodiment of this disclosure, the orientation head has an elliptical countersunk structure for orienting and mounting a high-temperature MEMS wall sensor on a wall. A convex mounting cavity is provided at the central axis of the orientation head, and the width of the cross-section of the convex mounting cavity is adapted to the width of the cross-section of the MEMS chip for positioning and mounting the MEMS chip.

[0079] In one exemplary embodiment of this disclosure, the insulating support includes:

[0080] The first ceramic substrate is welded to one end of the base layer. The first ceramic substrate includes a boss and a first limiting hole. The cross-sectional area of ​​the boss is the same as the cross-sectional area of ​​the boss mounting cavity. It is used to determine the mounting direction of the MEMS chip. The first limiting hole is located inside the first ceramic substrate and its horizontal plane is lower than the horizontal plane of the boss. It is used to limit the position height of the end with the smaller circumference of the spring pin.

[0081] The second ceramic substrate has a horizontal plane that is lower than that of the first ceramic substrate, and includes multiple fixing holes that are evenly opened inside the second ceramic substrate.

[0082] The third ceramic substrate is located at a horizontal plane that is lower than the horizontal plane of the second ceramic substrate. The third ceramic substrate includes a second limiting hole for limiting the height of the longer end of the spring needle.

[0083] The first ceramic substrate, the second ceramic substrate, and the third ceramic substrate are connected to each other, and the number and position of the first limiting hole, the fixing hole, and the second limiting hole correspond to the position of the blind hole of the MEMS chip, which is used to fix the spring pin.

[0084] In one exemplary embodiment of this disclosure, the spring pin includes:

[0085] The pins make floating contact with the device layer of the MEMS chip;

[0086] The elastic element, whose horizontal plane is lower than that of the pin, is detachably connected to one end of the pin and includes a spring and a pawl. The spring and the pawl are interlocked to make a slight interference fit between the spring pin and the MEMS chip.

[0087] The needle body is located at a horizontal plane that is lower than the horizontal plane of the elastic element, and is sleeved with the end of the elastic element that is furthest from the insertion pin;

[0088] The pin has a circumference greater than that of the pin. One end of the pin is fitted and connected to the pin body, and the other end is fixedly connected to the high-temperature wire.

[0089] In one exemplary embodiment of this disclosure, the resilient fastener includes:

[0090] A resilient lock nut, including a groove, for engaging with the internal thread of the housing to limit and lock the insulating support.

[0091] In one exemplary embodiment of this disclosure, one end of the high-temperature wire is connected to the pin of the spring pin by a crimping method for transmitting electrical signals when a power source is connected.

[0092] In one exemplary embodiment of this disclosure, the plug is a circular plug, the outer diameter of which is smaller than the inner diameter of the external thread of the housing, for installation with the mounting interface.

[0093] According to a second aspect of this disclosure, a packaging method for a high-temperature MEMS wall sensor is provided, applied to the high-temperature MEMS wall sensor of the first aspect of this disclosure, the method comprising:

[0094] S1. The MEMS chip is formed into a composite by ultrafast laser micro-welding to the first ceramic substrate;

[0095] S2. The high-temperature wire extending from the round plug is passed through the fixing holes of the elastic fastener and the third ceramic substrate in sequence, and the high-temperature wire is crimped and fixed to the pin of the spring pin.

[0096] S3. Determine the mounting direction of the assembly based on the shape of the first ceramic substrate and the MEMS chip, and use high-temperature adhesive to fix the relative position of the assembly and the housing.

[0097] S4. Insert the spring of the spring pin into the insert pin and install it into the assembly;

[0098] S5. The second ceramic substrate, the pin of the spring pin, and the third ceramic substrate are sequentially installed and fixed by rotating elastic fasteners to complete the packaging of the high-temperature MEMS wall sensor.

[0099] The technical solutions provided by the embodiments of this disclosure may include the following beneficial effects:

[0100] The high-temperature MEMS wall sensor in the exemplary embodiments of this disclosure, on the one hand, achieves reliable bonding between the MEMS chip and its supporting structure through a special design of the MEMS chip to form a benchtop structure, thereby leaving welding space for ultrafast laser welding. Laser welding technology is then used to achieve this, avoiding the drawbacks of traditional adhesive bonding, such as cracking, peeling, and poor bonding reliability at high temperatures. This results in higher reliability of the MEMS wall sensor's fixation to the supporting structure at high temperatures and allows it to withstand high-temperature environments for a longer period. On the other hand, a slight interference-fit floating contact is formed between the spring pin and the MEMS chip to achieve sensor signal transmission, ensuring stable signal transmission even under strong vibration environments and greatly improving the reliability of signal transmission at high temperatures. Furthermore, the interlocking connection between the elastic fastener and the internal threads on the screw of the housing enables flush mounting of the MEMS chip to the wall, while the external threads on the screw of the housing secure the sensor to the wall, thereby reducing problems such as loosening and breakage caused by vibration and improving the sensor's adaptability to vibration environments.

[0101] Specific embodiment: First, a high-temperature MEMS wall sensor is provided. This high-temperature MEMS wall sensor may include a housing, a MEMS chip, an insulating support, a spring pin, a flexible fastener, a high-temperature wire, and a circular plug, wherein:

[0102] The housing includes an orientation head and a screw. The MEMS chip is inserted into the cavity of the orientation head to form a stepped structure, providing a welding space. The cross-sectional area of ​​one end of the insulating support is the same as the cross-sectional area of ​​the cavity inside the orientation head, and it is welded to one end of the substrate layer of the MEMS chip. A spring pin is inserted into the interior of the insulating support, with its smaller circumference end penetrating the substrate layer and making floating contact with the device layer. An elastic fastener abuts against the end of the insulating support away from the MEMS chip to fix the insulating support. A high-temperature wire is used for signal transmission, and a circular plug is used for power input for signal transmission.

[0103] On the one hand, by specially designing the MEMS chip to form a desktop structure, welding space is provided for ultrafast laser welding. Then, laser welding technology is used to reliably fix the MEMS chip to its supporting structure, avoiding the shortcomings of traditional glue bonding, such as cracking, peeling, and poor bonding reliability at high temperatures. This makes the MEMS wall sensor fixed to the supporting structure more reliable at high temperatures and can withstand high-temperature environments for a longer time. On the other hand, the sensor signal transmission is achieved by forming a slightly interference floating contact between the spring pin and the MEMS chip, which can ensure stable signal transmission in strong vibration environments and greatly improve the reliability of signal transmission at high temperatures. Furthermore, the interlocking connection between the elastic fastener and the internal thread on the screw of the housing enables the MEMS chip to be flush with the wall, and the external thread on the screw of the housing fixes the sensor to the wall, thereby reducing problems such as loosening and breakage caused by vibration and improving the sensor's adaptability to vibration environments.

[0104] refer to Figure 1 -to Figure 19 As shown, a high-temperature MEMS wall sensor may include a housing 1, a MEMS chip 2, an insulating support 3, a spring pin 4, a flexible fastener 5, a high-temperature wire 6, and a plug 7, wherein:

[0105] The housing 1 includes a directional head 11 and a screw 12. The width of the cross-section of the directional head 11 is greater than the width of the cross-section of the screw 12. The directional head 11 has an irregularly shaped receiving cavity inside. The screw 12 is fixedly connected to the directional head 11 and includes an external thread 121 and an internal thread 122. The external thread 121 is located on the outer side near one end of the directional head 11 and is used to fix the high-temperature MEMS wall sensor to the wall. The internal thread 122 is located on the inner side away from the directional head 11.

[0106] MEMS chip 2 is inserted into the cavity of the orientation head 11, and the horizontal plane of MEMS chip 2 is the same as the horizontal plane of the end of orientation head 11 away from screw 12. The width of the cross-section of MEMS chip 2 is adapted to the width of the cavity. It includes device layer 21 and substrate layer 22. The substrate layer 22 is a transparent material and has a larger area than device layer 21. It is used to form a stepped structure to provide welding space.

[0107] The insulating support 3 has a cross-sectional area at one end that is the same as the cross-sectional area of ​​the accommodating cavity inside the orientation head 11, and is welded to the end of the substrate layer 22 of the MEMS chip 2 away from the device layer 21 in the welding space.

[0108] Spring pin 4 is inserted inside the insulating support 3, with the end with the smaller circumference penetrating the base layer 22 and making floating contact with the device layer 21. The length of spring pin 4 is less than the length of insulating support 3.

[0109] The elastic fastener 5 abuts against the end of the insulating support 3 away from the MEMS chip 2. The horizontal plane of the elastic fastener 5 is the same as the horizontal plane of the internal thread 122 of the screw 12, and is engaged with the internal thread 122 of the screw 12 to fix the insulating support 3.

[0110] The high-temperature wire 6 is electrically connected at one end to the longer end of the spring pin 4 for signal transmission.

[0111] The circular plug 7 is electrically connected to the end of the high-temperature wire 6 away from the spring pin 4 for power supply and signal transmission.

[0112] The outer shell 1 can be a conductive housing used to determine the mounting direction of the sensor and the MEMS chip 2, and to fix the sensor on the wall and mount the MEMS chip 2 flush with the wall. The orientation head 11 of the outer shell 1 can be a countersunk structure component. When the direction of the shear stress to be measured is determined, the two ends of the outer shell 1 can be distinguished according to the structure of the orientation head 11, thereby determining the mounting direction of the sensor on the wall. An irregularly shaped receiving cavity is opened inside the orientation head 11, and one end of the insulating support 3 is set with a corresponding shape. After the MEMS chip 2 is welded to the corresponding end of the insulating support 3, the mounting direction of the MEMS chip 2 in the orientation head 11 can be quickly determined according to the shape of the end of the insulating support 3 corresponding to the receiving cavity. In this embodiment, there are no special limitations on the material of the outer shell 1, the structure of the orientation head 11, and the shape of the receiving cavity.

[0113] Optionally, an external thread 121 is provided at the screw 12 of the housing 1. When the sensor is built into the wall according to the installation direction determined by the orienting head 11, a nut of the corresponding specification can be used to lock the connection with the external thread 121, thereby stably fixing the sensor to the wall. An internal thread 122 is provided at the screw 12 of the housing 1. The insulating support 3 can be fixed by the locking connection between the elastic fastener 5 and the internal thread 122. The insulating support 3 and the elastic fastener 5 can be used to stably support the MEMS chip 2, so that the MEMS chip 2 can be passed out from the accommodating cavity, and finally the MEMS chip 2 can be flush with the wall. In this embodiment, the specifications of the internal thread 122 and the external thread 121 provided on the screw 12 of the housing 1 are not particularly limited.

[0114] Optionally, the material of the outer shell 1 can be GH4169, the overall length of the outer shell 1 can be 80mm-100mm, the external thread 121 can be designed as the thread corresponding to an M12 screw, and the internal thread 122 can be designed as the thread corresponding to an M8 screw. In this embodiment, there are no special limitations on the material, length, specifications of the external thread 121 and the specifications of the internal thread 122 of the outer shell 1.

[0115] MEMS chip 2 can be a stepped structure chip used for measuring shear stress. Designing MEMS chip 2 as a stepped structure can leave more welding space, so that laser welding technology can be used to reliably fix MEMS chip 2 to one end of insulating support 3. This avoids the disadvantages of traditional glue bonding, such as cracking, peeling and poor bonding reliability at high temperatures. It makes the fixing reliability of MEMS wall sensor and support structure higher at high temperatures and can withstand high temperature environment for a longer time.

[0116] Optionally, the MEMS chip 2 can be designed as a stepped structure by setting the area of ​​the substrate layer 22 of the MEMS chip 2 to be larger than the area of ​​the device layer 21. The substrate layer 22 can be made of a transparent material, such as Borofloat 33, and the edge of the substrate layer 22 needs to be at least 0.5 mm larger than the device layer 21. This allows the portion of the substrate layer 22 that extends beyond the device layer 21 to be welded to one end of the insulating support using an ultrafast laser, ensuring the reliability of the laser welding. The material of the device layer 21 can be SiC. This embodiment does not impose any special limitations on the design method of the stepped structure of the MEMS chip 1, or on the materials of the substrate layer 22 and the device layer 21.

[0117] Optionally, the determination of the area of ​​the device layer 21 and the base layer 22 is related to the specifications of the external thread 121 of the housing 1 and the wall thickness of the housing 1, that is, the width of the cross-section of the accommodating cavity. When the external thread 121 of the housing 1 adopts the thread corresponding to the M12 specification nut, the device layer 21 can be designed with a thickness of 50-200um and an area of ​​5mm×5mm-8mm×8mm, and the base layer 22 can be designed with a thickness of 300-500um and an area of ​​6mm×6mm-10mm×10mm. Of course, the specifications of the external thread 121 of the housing 1 and the wall thickness can also be determined according to the specific situation, thereby determining the area of ​​the device layer 21 and the base layer 22. In this embodiment, no special limitation is made on the area of ​​the base layer 22 and the area of ​​the device layer 21.

[0118] Optionally, multiple apertures can be provided in the substrate layer 22, so that the device layer 21 can be contacted through the apertures provided in the substrate layer 22 to realize the transmission of electrical signals.

[0119] The insulating support 3 refers to an insulator that can isolate the electrical connection between the outer shell 1 and the conductor, and between adjacent contacts, and can be welded to the substrate layer 22 of the MEMS chip 2. It is used to achieve reliable fixation of the MEMS chip 2 and to determine the mounting direction of the MEMS chip 2. The insulating support 3 can be composed of multiple parts, such as three parts. Each part has the same number of holes as the holes opened in the substrate layer 22, and the positions of each hole correspond to the positions of the holes opened in the substrate layer 22. In this embodiment, there is no particular limitation on the number of components of the insulating support 3 or the number of holes opened in each part, as long as it corresponds to the number and position of the holes opened in the substrate layer 22 of the MEMS chip 2.

[0120] Optionally, the shape of the end of the insulating support 3 that is welded to the MEMS chip 2 is exactly the same as the shape of the accommodating cavity. This allows for quick determination of the mounting direction of the MEMS chip 2 after welding. Additionally, limiting holes can be provided inside the insulating support 3. When the spring pin 4 passes through the holes in various parts of the insulating support 3 and contacts the device layer 21 of the MEMS chip 2 through the openings in the substrate layer 22 of the MEMS chip 2, the height of the spring pin 4 can be limited. This ensures that the spring pin 4 can float and contact the device layer 21 of the MEMS chip 2, thus ensuring the stability of the electrical signal transmission.

[0121] The spring pin 4 is an elastic conductive pin capable of transmitting electrical signals to the MEMS chip 2 through floating contact. It is used to transmit electrical signals and ensure the stability of the signal transmission. The spring pin 4 can be inserted through a hole inside the insulating support 3 and exit from the end soldered to the MEMS chip 2. It then floats in contact with the device layer 21 of the MEMS chip 2 through a hole in the substrate layer 22, thus enabling the transmission of electrical signals. The length of the spring pin 4 is less than the length of the insulating support 3, ensuring the safety of the end of the spring pin 4 that is in fixed contact with the high-temperature wire 6 and the insulation between the spring pin 4 and the outer casing 1. In this embodiment, the length of the spring pin 4 is not specifically limited, as long as it is less than the length of the insulating support 3.

[0122] The elastic fastener 5 is a component used to support the insulating support 3 and to limit and lock the insulating support 3 in conjunction with the internal thread 122 of the outer shell 1. It is used to fix the insulating support 3, thereby ensuring that the MEMS chip 2 welded to the insulating support 3 is installed flush with the wall surface. The position of the elastic fastener 5 is related to the position of the internal thread 122 of the outer shell 1. An appropriate number of elastic fasteners 5 can be set at the bottom of the insulating support 3 according to the position of the internal thread 122 of the outer shell 1 and the height of the insulating support 3, so as to ensure that the insulating support 3 supports the MEMS chip 2 to a height that allows the MEMS chip 2 to be installed flush with the wall surface. In this embodiment, the number of elastic fasteners 5 is not particularly limited.

[0123] The high-temperature conductor 6 can be a conductor capable of stable electrical signal transmission in high-temperature environments, such as above 600 degrees Celsius, for signal transmission. The material of the high-temperature conductor 6 can be platinum, and the length can be 200-300mm. The plug 7 can be a component that can be connected to a power source, and the material can be copper alloy. Of course, the appropriate specifications and materials of the high-temperature conductor 6 and plug 7 can be selected according to the specific situation. In this embodiment, there are no special limitations on the material, length, material, and outer diameter of the high-temperature conductor 6 and plug 7.

[0124] The following is a detailed description of each part of the MEMS sensor:

[0125] In one exemplary embodiment of this disclosure, the MEMS chip 2 further includes:

[0126] Multiple through holes are evenly distributed on the substrate layer 22 and bonded to the device layer 21 to form multiple blind holes 23, which are used to allow the end of the spring pin 4 with a smaller circumference to float and contact the device layer 21 through the blind holes 23 for signal transmission.

[0127] refer to Figure 3 As shown, the blind vias 23 can be through holes with the same diameter that are evenly distributed on the back of the substrate layer 22. The diameter of the through holes can be set to 0.5mm-1mm. The number of through holes is related to the electrical signals in different directions required for electrical signal transmission. For example, three through holes can be evenly opened on the back of the substrate layer 22, so that the device layer 21 of the MEMS chip 2 can be floated from the blind vias 23 in different directions by the spring pins 4 to realize the transmission of electrical signals in different directions. In this embodiment, the number and diameter of the through holes are not particularly limited.

[0128] In one exemplary embodiment of this disclosure, the orientation head 11 has an elliptical countersunk structure for orienting and mounting the high-temperature MEMS wall sensor on the wall. A convex mounting cavity 111 is provided at the central axis of the orientation head 11. The width of the cross-section of the convex mounting cavity 111 is adapted to the width of the cross-section of the MEMS chip 2 for positioning and mounting the MEMS chip 2.

[0129] refer to Figure 4 and Figure 5 As shown, the elliptical countersunk structure can be a structure that is wider at the top and narrower at the bottom for orientation. The convex cavity 111 can be a receiving cavity opened inside the elliptical countersunk structure for placing one end of the welded insulating support 3 and the MEMS chip 2. Thus, the mounting direction of the MEMS chip 2 welded to the insulating support 3 can be determined according to the shape of the convex cavity 111 and one end of the insulating support 3. The width of the cross-section of the convex cavity 111 is adapted to the width of the cross-section of the MEMS chip 2. For example, if the size of the substrate layer 22 of the MEMS chip 2 is 6mm×6mm-10mm×10mm, then the size of the rectangle corresponding to the maximum width of the cross-section of the convex cavity 111 is 6mm×6mm-10mm×10mm, and the size of the rectangle corresponding to the minimum width can be set to less than 2mm×2mm. This ensures that the MEMS chip 2 can pass through the convex cavity 111 and fit tightly against the flush position between the convex cavity 111 and the wall.

[0130] Optionally, the structure of the orientation head 11 corresponds to the installation space of the sensor on the wall, thereby ensuring that the sensor can be locked and fixed to the wall. When the structure of the orientation head 11 is an elliptical countersunk head structure, the orientation head 11 can be set to a thickness of 5mm-10mm, a radius of 15mm-20mm, and a length of 30mm-40mm. This embodiment does not impose any special limitations on the structure and specifications of the orientation head 11.

[0131] In one exemplary embodiment of this disclosure, the insulating support 3 includes:

[0132] A first ceramic substrate 31 is welded to one end of the base layer 22. The first ceramic substrate 31 includes a boss 311 and a first limiting hole 312. The cross-sectional area of ​​the boss 311 is the same as the cross-sectional area of ​​the boss mounting cavity 111, and is used to determine the mounting direction of the MEMS chip 2. The first limiting hole 312 is located inside the first ceramic substrate 31, and its horizontal plane is lower than the horizontal plane of the boss 311, and is used to limit the position height of the end of the spring pin 4 with a smaller circumference. A second ceramic substrate 32 is located at a horizontal plane lower than the horizontal plane of the first ceramic substrate 31, and includes multiple fixing... Holes 321 are evenly distributed inside the second ceramic substrate 32; a third ceramic substrate 33 is located at a lower level than the second ceramic substrate 32, and the third ceramic substrate 33 includes a second limiting hole 331 for limiting the height of the longer end of the spring pin 4; wherein, the first ceramic substrate 31, the second ceramic substrate 32 and the third ceramic substrate 33 are connected to each other, and the number and position of the first limiting hole 312, the fixing hole 321 and the second limiting hole 331 correspond to the position of the blind hole 23 of the MEMS chip 1 for fixing the spring pin 4.

[0133] The first ceramic substrate 31 may be part of an insulating support 3 that is welded to the base layer 22 of the MEMS chip 2, used to achieve a fixed connection with the MEMS chip 2 and to determine the mounting direction of the MEMS chip 2. The cross-section of the boss 311 of the first ceramic substrate 31 is the same as the cross-section of the convex cavity 111. For example, when the size of the rectangle corresponding to the maximum width of the cross-section of the convex cavity 111 is 6mm×6mm-10mm×10mm and the size of the rectangle corresponding to the minimum width is less than 2mm×2mm, then the size of the rectangle corresponding to the maximum width of the cross-section of the boss 311 is 6mm×6mm-10mm×10mm and the size of the rectangle corresponding to the minimum width is also less than 2mm×2mm. The height of the boss 311 can be set to 3-5mm, so that while determining the mounting direction of the MEMS chip 2, the first ceramic substrate 31 can be inserted into the convex cavity 111, so that the MEMS chip 2 welded to the first ceramic substrate 31 can be installed flush with the wall. In this embodiment, the size of the boss 311 of the first ceramic substrate 31 is not particularly limited.

[0134] Optionally, after the end of the first ceramic substrate 31 containing the protrusion 311 is welded to the MEMS chip 2, high-temperature adhesive can be used to fix the relative positions of the first ceramic substrate 31, the welded MEMS chip 2, and the outer shell 1, thereby further ensuring the fixed connection between the first ceramic substrate 31 and the MEMS chip 2.

[0135] The first limiting hole 312 can be a step formed by two circular holes of different diameters inside the first ceramic substrate 31, used to limit the installation position of the end of the spring pin 4 with the smaller circumference. For example, the first limiting hole 312, which is wider at the bottom and narrower at the top, can be formed by opening circular holes with diameters of 3 mm and 1 mm inside the first ceramic substrate 31. The number and position of the first limiting holes 312 correspond to the blind holes 23 of the MEMS chip 2. This embodiment does not particularly limit the setting method of the first limiting hole 312.

[0136] The second ceramic substrate 32 can be part of the insulating support 3 used to fix the spring pin 4, and the third ceramic substrate 33 can be part of the insulating support 3 used to fix and limit the longer end of the spring pin 4. The first ceramic substrate 31, the second ceramic substrate 32, and the third ceramic substrate 33 can all be made of 99% alumina, and the first ceramic substrate 31, the second ceramic substrate 32, and the third ceramic substrate 33 can be set to a diameter of 10mm and a length of 20-30mm, and connected accordingly. By designing the insulating support 3 as a three-segment ceramic substrate structure, the stress matching at high temperatures can be improved, thereby reducing the processing difficulty of the insulating support 3.

[0137] Optionally, the diameter of the fixing hole 321 inside the second ceramic substrate 32 can be 3mm, and the number and position of the fixing hole 321 inside the second ceramic substrate 32 correspond to the blind hole 23 of the MEMS chip 2. In this embodiment, the specifications of the fixing hole 321 inside the second ceramic substrate 32 are not particularly limited.

[0138] The second limiting hole 331 can be a step formed by two circular holes of different diameters inside the third ceramic substrate 33, used to limit the installation position of the longer end of the spring pin 4. For example, the second limiting hole 331, which is narrower at the top and wider at the bottom, can be formed by opening circular holes with diameters of 1 mm and 3 mm inside the third ceramic substrate 33. The number and position of the second limiting holes 331 correspond to the blind holes 23 of the MEMS chip 2. The setting method of the second limiting holes 331 in this embodiment is not particularly limited.

[0139] In one exemplary embodiment of this disclosure, the spring pin 4 includes:

[0140] The pin 41 floats in contact with the device layer 21 of the MEMS chip 2; the elastic element, the horizontal plane of which is lower than the horizontal plane of the pin 41, is detachably connected to one end of the pin 41, including a spring 42 and a spring claw 43, which are interlocked to make the floating contact between the spring pin 4 and the MEMS chip 2 slightly interference; the pin body 44, the horizontal plane of which is lower than the horizontal plane of the elastic element, and is sleeved with the end of the elastic element away from the pin 41; the pin 45, the circumference of which is greater than the circumference of the pin 41, one end of which is sleeved with the pin body 44, and the other end is fixedly connected to the high-temperature wire 6.

[0141] refer to Figures 14 to 15 As shown, the spring pin 4 includes a pin 41, an elastic element (spring 42 and spring claw 43), a pin body 44, and a pin 45, all of which can be detachably connected. The material of the spring pin 4 can be a high-temperature nickel alloy to ensure the accuracy of electrical signal transmission between the pin 41 of the spring pin 4 and the device layer 21 of the MEMS chip 2 under high-temperature working conditions. The overall length of the spring pin 4 can be set to 200-300mm. The length of the spring pin 4 can penetrate through the first ceramic substrate 31 and the second ceramic substrate 32, and be shorter than the third ceramic substrate 33. This achieves electrical insulation between the pin 45 of the spring pin 4 and the outer shell 1 when it is fixedly connected to the high-temperature wire 6, so as to ensure the reliability of electrical signal transmission. Of course, a suitable material and a suitable length of spring pin 4 can be selected according to the specific situation. This embodiment does not make any special limitations on the material and length of the spring pin 4.

[0142] In one exemplary embodiment of this disclosure, the resilient fastener 5 includes:

[0143] The resilient locking nut 51 includes a groove 511 for engaging with the internal thread 122 of the screw 12 to limit and lock the insulating support 3.

[0144] Optionally, two elastic locking nuts 51 can be used to fix the insulating support 3. The use of elastic locking nuts 51 can facilitate the adjustment of the height of the insulating support 3, thereby adjusting the height of the MEMS chip 2. For example, the elastic locking nuts 51 installed on the horizontal plane of the internal thread 122 of the outer shell 1 can be rotated to achieve a fixed connection between the insulating support 3 and the internal thread 122 of the outer shell 1, thereby ensuring that the horizontal plane of the MEMS chip 2 is flush with the wall. Of course, an appropriate number of elastic locking nuts 51 can be selected according to the specific situation. This embodiment does not make a special limitation on the number of elastic locking nuts 51.

[0145] Optionally, a groove 511 of a certain specification can be provided on the elastic fastener 5. For example, when the internal thread 122 of the outer shell 1 is the thread corresponding to the M8 specification nut, the groove 511 can be set to 2mm, so as to facilitate the installation of the elastic fastener 5 in conjunction with the internal thread 122 of the outer shell 1 to limit and lock the insulating support 3. In this embodiment, the specification of the groove 511 provided on the elastic fastener 5 is not particularly limited.

[0146] In one exemplary embodiment of this disclosure, one end of the high-temperature wire 6 is connected to the pin 45 of the spring pin 4 by a crimping method for transmitting electrical signals when the power supply is connected.

[0147] Optionally, the high-temperature wire 6 can be fixedly connected to the pin of the spring pin 4 by crimping, which can improve the stability of the electrical connection and thus ensure the stability of the electrical signal transmission. For example, the high-temperature wire 6 can be crimped to the pin 45 of the spring pin 4 by passing the high-temperature wire 6 through the inside of the elastic locking nut 51 and the second limiting hole 331 of the third ceramic substrate 33, thereby realizing the electrical connection between the high-temperature wire 6 and the spring pin 4. The spring pin 4 floats in contact with the device layer 21 of the MEMS chip 2, thereby realizing the stable transmission of electrical signals.

[0148] In one exemplary embodiment of this disclosure, the plug 7 is a circular plug, and the outer diameter of the circular plug is smaller than the inner diameter of the external thread 121 of the housing, for installation with the mounting interface.

[0149] Optionally, the sensor is fixedly installed on the wall by locking the nut to the external thread 121 of the housing 1. The inner cross-section of the nut is circular, so setting the shape of the plug 7 to be circular can facilitate the installation of the sensor. The outer diameter of the circular plug can be set to be smaller than the inner diameter of the external thread 121 of the housing 1. For example, when the specification of the external thread 121 of the housing is the thread corresponding to an M12 nut, the outer diameter of the circular plug can be set to 10mm. Thus, when the sensor is installed on the wall, the nut that is locked to the external thread 121 can pass through the plug 7 to achieve locking and fixing at the external thread 121, thereby stably installing the sensor on the wall.

[0150] For example, refer to Figures 19-23As shown, the sealing process of the sensor is described in detail. For example, the first ceramic substrate 31 is first welded to the substrate layer 22 of the MEMS chip 2. Then, the high-temperature wire 6 extending from the plug 7 is sequentially inserted into the interior of the elastic locking nut 51 and the second limiting hole 331 of the third ceramic substrate 33 and the pin 45 of the spring pin 4 for crimping. After that, the mounting direction of the MEMS chip 2 can be determined according to the shape of the first ceramic substrate 31. Then, the welded first ceramic substrate 31 and MEMS chip 2 are fixed to the relative position of the outer shell 1 using high-temperature adhesive. Then, the spring 42 of the spring pin 4 is inserted into the pin 41. The combined pin 41 and spring 42 are inserted into the first limiting hole 312 of the first ceramic substrate 31 welded to the MEMS chip 2. The second ceramic substrate 32, the pin 45 of the spring pin 4 and the third ceramic substrate 33 are sequentially inserted. Finally, the elastic fastener 5 is rotated to fix the sensor, thus completing the encapsulation of the high-temperature MEMS wall sensor.

[0151] According to a second aspect of this disclosure, a packaging method for a high-temperature MEMS wall sensor is proposed. This method can be executed by a control terminal or a server. The following description uses execution by a control terminal as an example, including:

[0152] The MEMS chip and the first ceramic substrate are assembled using ultrafast laser micro-welding. A high-temperature wire extending from the circular plug is sequentially passed through the elastic fastener and the second limiting hole of the third ceramic substrate, and then crimped and fixed to the pin of the spring pin. The mounting direction of the assembly is determined according to the shape of the first ceramic substrate and the MEMS chip, and the relative position of the assembly and the housing is fixed using high-temperature adhesive. The spring of the spring pin is inserted into the pin and installed into the assembly. The second ceramic substrate, the pin of the spring pin, and the third ceramic substrate are sequentially installed and fixed by rotating the elastic fastener to complete the encapsulation of the high-temperature MEMS wall sensor.

[0153] According to the packaging method of the high-temperature MEMS wall sensor disclosed herein, on the one hand, the MEMS chip is specially designed to form a benchtop structure, thus leaving welding space for ultrafast laser welding. Then, the reliable fixation of the MEMS chip and its supporting structure is achieved by laser welding technology, avoiding the shortcomings of traditional glue bonding, such as cracking, peeling, and poor bonding reliability at high temperatures. This makes the MEMS wall sensor and the supporting structure more reliable at high temperatures and can withstand high-temperature environments for a longer time. On the other hand, the sensor signal transmission is achieved by forming a slightly interference floating contact between the spring pin and the MEMS chip, which can ensure stable signal transmission in strong vibration environments and greatly improve the reliability of signal transmission at high temperatures. Furthermore, the fitting connection between the elastic fastener and the internal thread on the screw of the housing enables the MEMS chip to be flush with the wall, and the external thread on the screw of the housing enables the sensor to be fixed to the wall, thereby reducing problems such as loosening and breakage caused by vibration and improving the adaptability of the sensor in vibration environments.

[0154] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A high-temperature MEMS wall sensor, characterized in that... The device includes a housing (1), a MEMS chip (2), an insulating support (3), a spring pin (4), an elastic fastener (5), a high-temperature wire (6), and a plug (7). The top of the housing (1) is an directional head (11), and the middle of the directional head is provided with an irregularly shaped receiving cavity. The lower part of the directional head (11) is an external thread structure connected to an internal thread structure. The insulating support (3) is placed in the cavity inside the housing (1) at the lower part of the directional head (11). The shape of the boss at the upper end of the insulating support (3) matches the receiving cavity, and the lower end is provided with an elastic fastener (5) connected to the internal thread structure. The MEMS chip (2) is placed in the receiving cavity, and the lower end of the MEMS chip (2) floats in contact with the spring pin (4). The spring pin (4) passes through the insulating support (3), and the spring pin (4) is connected to the high-temperature wire (6). The high-temperature wire (6) is connected to the plug (7). The width of the cross-section of the orientation head (11) is greater than the width of the cross-section of the screw. The elliptical countersunk head structure is used for the orientation and installation of the high-temperature MEMS wall sensor on the wall. The MEMS chip (2) includes a device layer and a substrate layer. The substrate layer is made of a transparent material and has an area larger than the device layer. It is used to form a stepped structure to provide a welding space. The substrate layer of the MEMS chip (2) has multiple through holes and is bonded to the device layer to form multiple blind holes. These blind holes allow the smaller end of the spring pin to float and contact the device layer through the blind holes for signal transmission.

2. The high-temperature MEMS wall sensor according to claim 1, characterized in that: The insulating support (3) includes a first ceramic substrate (31), a second ceramic substrate (32) and a third ceramic substrate (33) arranged in series. The first ceramic substrate is welded to one end of the base layer of the MEMS chip (2). The first ceramic substrate includes a boss and a first limiting hole. The area of ​​the cross-section of the boss is the same as the area of ​​the cross-section of the mounting cavity of the boss, which is used to determine the mounting direction of the MEMS chip. The first limiting hole is located inside the first ceramic substrate and its horizontal plane is lower than the horizontal plane of the boss, which is used to limit the position height of the end with the smaller circumference of the spring pin. The second ceramic substrate, the horizontal plane of which the second ceramic substrate is located is lower than the horizontal plane of the first ceramic substrate, includes multiple fixing holes, which are evenly opened inside the second ceramic substrate; The third ceramic substrate is located at a horizontal plane lower than that of the second ceramic substrate. The third ceramic substrate includes a second limiting hole for limiting the height of the longer end of the spring needle.

3. The high-temperature MEMS wall sensor according to claim 2, characterized in that: The first ceramic substrate, the second ceramic substrate, and the third ceramic substrate are connected to each other, and the number and position of the first limiting hole, the fixing hole, and the second limiting hole correspond to the position of the blind hole of the MEMS chip, which is used to fix the spring pin.

4. The high-temperature MEMS wall sensor according to claim 1, characterized in that: The spring pin (4) includes a pin (41), a spring (42), a claw (43), a pin body (44), and a lead (45) connected in sequence; the spring and the claw are fitted together to make the floating contact between the spring pin and the MEMS chip slightly interference; the circumference of the lead is greater than the circumference of the pin, one end of the lead is fitted to the pin body, and the other end is fixedly connected to the high-temperature wire.

5. The high-temperature MEMS wall sensor according to claim 1, characterized in that: The plug is a circular plug, and the outer diameter of the circular plug is smaller than the inner diameter of the external thread of the housing, for installation with the mounting interface.

6. A packaging method for a high-temperature MEMS wall sensor according to any one of claims 1 to 5, characterized in that: S1. The MEMS chip is formed into a composite by ultrafast laser micro-welding to the first ceramic substrate; S2. The high-temperature wire extending from the round plug is passed through the fixing holes of the elastic fastener and the third ceramic substrate in sequence, and the high-temperature wire is crimped and fixed to the pin of the spring pin. S3. Determine the mounting direction of the assembly based on the shape of the first ceramic substrate and the MEMS chip, and use high-temperature adhesive to fix the relative position of the assembly and the housing. S4. Insert the spring of the spring pin into the insert pin and install it into the assembly; S5. The second ceramic substrate, the pin of the spring pin, and the third ceramic substrate are sequentially installed and fixed by rotating elastic fasteners to complete the packaging of the high-temperature MEMS wall sensor.

7. A method of using the high-temperature MEMS wall sensor according to any one of claims 1 to 5, characterized in that: It is used for working at temperatures above 600 degrees Celsius and requires a fixed environment on a wall to ensure stable signal transmission under strong vibration, which greatly improves the reliability of signal transmission at high temperatures.

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