Micro LED Structure and Micro Display Panel

Abstract

A micro light-emitting diode (LED) structure includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductivity type, a light-emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light-emitting layer, the second semiconductor layer having a second conductivity type different from the first conductivity type. The second semiconductor layer further includes a semiconductor region and an ion-implanted region formed around the semiconductor region, the resistance of the ion-implanted region being higher than the resistance of the semiconductor region.

Description

Technical Field

[0001] This disclosure relates generally to the field of light-emitting diode technology, and more specifically to a micro light-emitting diode (LED) structure and a micro display panel including said micro LED structure. Background Technology

[0002] Inorganic micro-light-emitting diodes (also known as “micro-LEDs” or “μ-LEDs”) are becoming increasingly important due to their use in a variety of applications, including self-emitting microdisplays, visible light communication, and optogenetics. μ-LEDs offer superior output performance compared to conventional LEDs due to better strain relaxation, improved light extraction efficiency, and more uniform current spreading. Compared to conventional LEDs, μ-LEDs are characterized by improved thermal effects, improved operation at higher current densities, better response rates, a wider operating temperature range, higher resolution, a wider color gamut, higher contrast, and lower power consumption.

[0003] μ-LEDs comprise a III-V group epitaxial layer for forming multiple mesa. In some μ-LED designs, spaces need to be formed between adjacent μ-LEDs to prevent carriers in the epitaxial layer from diffusing from one mesa to the next. The spaces formed between adjacent microLEDs can reduce the effective light-emitting area and decrease light extraction efficiency. Eliminating these spaces may increase the effective light-emitting area, but this will cause carriers in the epitaxial layer to diffuse laterally to adjacent mesa, thus reducing luminous efficiency. Furthermore, without the spaces between adjacent mesa, crosstalk will occur between adjacent μ-LEDs, leading to less reliable or inaccurate μ-LEDs.

[0004] Furthermore, in some μ-LED structures, small LED pixels with high current density are more likely to experience redshift, lower maximum efficiency, and uneven emission, typically caused by degraded current injection during manufacturing. Additionally, the peak external quantum efficiency (EQE) and internal quantum efficiency (IQE) of μ-LEDs decrease significantly with decreasing chip size. This reduction in EQE and IQE is caused by nonradiative recombination at improperly etched quantum well sidewalls. The reduction in IQE is caused by poor current injection and electron leakage current in μ-LEDs. Improving EQE and IQE requires optimizing the quantum well sidewall region to reduce current density. Summary of the Invention

[0005] According to this disclosure, a micro-LED structure is provided. The structure includes a mesa structure. The mesa structure further includes a first semiconductor layer having a first conductivity type, a light-emitting layer formed on the first semiconductor layer, a second semiconductor layer formed on the light-emitting layer, a sidewall protective layer formed on the sidewalls of the mesa structure, and a sidewall reflective layer formed on the surface of the sidewall protective layer. The second semiconductor layer has a second conductivity type different from the first conductivity type. The bottom surface region of the first semiconductor layer is larger than the bottom surface region of the second semiconductor layer, the bottom surface region of the second semiconductor layer is larger than the top surface region of the second semiconductor layer, and the bottom surface region of the first semiconductor layer is larger than the top surface region of the first semiconductor layer. The second semiconductor layer further includes a semiconductor region and an ion-implanted region formed around the semiconductor region, the resistance of the ion-implanted region being higher than the resistance of the semiconductor region.

[0006] Furthermore, according to this disclosure, a microdisplay panel is provided. The microdisplay panel includes a microLED array. The microLED array includes a first microLED structure and an integrated circuit (IC) backplane formed beneath the first microLED structure. The first microLED structure is electrically coupled to the IC backplane. Attached Figure Description

[0007] Figure 1 This is a schematic cross-sectional view of a micro-LED structure according to an exemplary embodiment of this disclosure;

[0008] Figure 2 This is an exemplary embodiment of the present disclosure for manufacturing such as Figure 1 A flowchart illustrating the method for constructing the micro-LED structure is shown.

[0009] Figure 3 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0010] Figure 4 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0011] Figure 5 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0012] Figure 6 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0013] Figure 7 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0014] Figure 8 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0015] Figure 9 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0016] Figure 10 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0017] Figure 11 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0018] Figure 12 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 2 A cross-sectional view of the steps of the method;

[0019] Figure 13 This is a schematic cross-sectional view of at least a portion of an exemplary microdisplay panel according to an exemplary embodiment of this disclosure.

[0020] Figure 14 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0021] Figure 15 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0022] Figure 16 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0023] Figure 17 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0024] Figure 18 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0025] Figure 19 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0026] Figure 20 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0027] Figure 21 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0028] Figure 22 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0029] Figure 23 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method;

[0030] Figure 24 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional view of the steps of the method; and

[0031] Figure 25 This is an illustrative representation of an exemplary embodiment according to this disclosure for implementing... Figure 13 A cross-sectional diagram of the steps of the method. Detailed Implementation

[0032] In the following description, embodiments consistent with this disclosure will be illustrated with reference to the accompanying drawings. Wherever possible, the same reference numerals will be used throughout the drawings to refer to the same or similar parts.

[0033] As discussed above, existing micro-LEDs may suffer from problems such as redshift, low maximum efficiency, and uneven emission. To address these issues, an embodiment of the present invention provides a micro-LED structure. In conjunction with... Figure 1In some consistent embodiments, the micro-LED structure includes a mesa structure 01, a top contact 02, a bottom contact 03, a bottom metal bonding layer 031, and a top conductive layer 04. The mesa structure 01 further includes a first-type semiconductor layer 101, a light-emitting layer 102, and a second-type semiconductor layer 103. The light-emitting layer 102 is formed on top of the first-type semiconductor layer 101. The second-type semiconductor layer 103 is located on top of the light-emitting layer 102. In some embodiments, the first type and the second type refer to different conductivity types. For example, the first type is P-type, and the second type is N-type. In another example, the first type is N-type, and the second type is P-type.

[0034] Still referencing Figure 1 In some embodiments, the bottom surface region of the first semiconductor layer 101 is larger than the bottom surface region of the second semiconductor layer 103. In some embodiments, the bottom surface region of the second semiconductor layer 103 is larger than the top surface region of the second semiconductor layer 103. In some embodiments, the sidewalls of the first semiconductor layer 101, the light-emitting layer 102, and the second semiconductor layer 103 are in the same plane, making the sidewalls flat. In some embodiments, the light-emitting layer 102 and the second semiconductor layer 103 are not in the same plane, and the sidewalls are not flat. In some embodiments, the diameter of the second semiconductor layer 103 is smaller than the diameter of the light-emitting layer 102. In some embodiments, the diameter of the first semiconductor layer 101 is smaller than the diameter of the light-emitting layer 102.

[0035] In some embodiments, the material of the first type semiconductor layer 101 includes at least one of p-GaAs, p-GaP, p-AlInP, p-GaN, p-InGaN, and p-AlGaN. The material of the second type semiconductor layer 103 includes at least one of n-GaAs, n-AlInP, n-GaInP, n-AlGaAs, n-AlGaInP, n-InGaN, and n-AlGaN. The light-emitting layer 102 is formed of a quantum well layer. The material of the quantum well layer includes at least one of GaAs, InGaN, AlGaN, AlInP, GaInP, and AlGaInP. In some further embodiments, the thickness of the first type semiconductor layer 101 is greater than the thickness of the second type semiconductor layer 103, and the thickness of the light-emitting layer 102 is less than the thickness of the first type semiconductor layer 101. In some embodiments, the thickness of the first type semiconductor layer 101 ranges from 700 nm to 2 μm, and the thickness of the second type semiconductor layer 103 ranges from 100 nm to 200 nm. In some implementations, the thickness of the quantum well layer is less than or equal to 30 nm. In some implementations, the quantum well layer comprises no more than three pairs of quantum wells.

[0036] In some embodiments, the first type semiconductor layer 101 includes one or more mirrors 1011. In some embodiments, the mirrors 1011 are formed on the bottom surface of the first type semiconductor layer 101. In some embodiments, the mirrors 1011 are formed inside the first type semiconductor layer 101. In some embodiments, the material of the mirrors 1011 is a mixture of dielectric and metallic materials. In some further embodiments, the dielectric material includes SiO2 or SiNx, where "x" is a positive integer. In some embodiments, the metallic material includes Au or Ag. In some embodiments, multiple mirrors 1011 are formed horizontally, one after another, in different horizontal planes in the first type semiconductor layer 1011, thereby dividing the first type semiconductor layer 101 into multiple layers.

[0037] In some embodiments, a top contact 02 is formed on the top surface of the second type semiconductor layer 103. The conductivity type of the top contact 02 is the same as that of the second type semiconductor layer 103. For example, if the second type is N-type, then the top contact 02 is an N-type contact; or if the second type is P-type, then the top contact 02 is a P-type contact. In some embodiments, the top contact 02 is made of a metal or metal alloy including at least one of AuGe, AuGeNi, etc. The top contact 02 is used to form an ohmic contact between the top conductive layer 04 and the second type semiconductor layer 103, thereby optimizing the electrical properties of the microLED. In some embodiments, the diameter of the top contact 02 ranges from 20 nm to 50 nm, and the thickness of the top contact 02 ranges from 10 nm to 20 nm.

[0038] In some embodiments, the second type semiconductor layer 103 includes a second type semiconductor region 1031 and an ion-implanted region 1032. The second type semiconductor region 1031 is formed directly below the top contact 02. The ion-implanted region 1032 is formed around the second type semiconductor region 1031. In some embodiments, the resistance of the ion-implanted region 1032 is greater than the resistance of the second type semiconductor region 1031. The ion-implanted region 1032 is formed via an additional ion implantation process. In some embodiments, the center of the top contact 02 is aligned with the center of the second type semiconductor region 1031 along an axis perpendicular to the upper surface of the second type semiconductor region 1031. In some further embodiments, the diameter of the ion-implanted region 1032 is greater than or equal to the diameter of the top contact 02, and the diameter of the second type semiconductor region 1031 is greater than or equal to the diameter of the top contact 02. In some embodiments, the diameter of the second type semiconductor region 1031 is less than or equal to three times the diameter of the top contact 02. In some embodiments, the conductivity type of the ion implantation region 1032 is the same as that of the second type semiconductor region 1031. In some further embodiments, the ion implantation region 1032 includes at least one type of implanted ion. In some embodiments, the implanted ion is selected from one or more of the following ions: hydrogen, nitrogen, fluorine, oxygen, carbon, argon, phosphorus, boron, silicon, sulfur, arsenic, chlorine, and metal ions. The metal ion is selected from one or more of the following ions: zinc, copper, indium, aluminum, nickel, titanium, magnesium, chromium, gallium, tin, antimony, tellurium, tungsten, tantalum, germanium, molybdenum, and platinum. In some further embodiments, the diameter of the ion implantation region 1032 is larger than the diameter of the second semiconductor region 1031. In some embodiments, the diameter of the ion implantation region 1032 is more than twice that of the second type semiconductor region 1031. Here, the diameter of the ion implantation region 1032 ranges from 100 nm to 1200 nm; and the diameter of the top contact 02 ranges from 20 nm to 50 nm. The thickness of the second type semiconductor region 1031 is greater than or equal to the thickness of the ion implantation region 1032. In some embodiments, the thickness of the second type semiconductor region 1031 ranges from 100 nm to 200 nm, and the thickness of the ion implantation region 1032 ranges from 100 nm to 150 nm.

[0039] Still referencing Figure 1 In some embodiments, the microLED structure further includes a top conductor layer 04 covering the top surface of the second type semiconductor layer 103 and the top contact 02. The top conductor layer 04 is transparent and conductive. In some embodiments, the top conductor layer 04 includes at least one of indium tin oxide (ITO) and fluorine-doped tin oxide (FTO).

[0040] In some embodiments, a bottom contact 03 is formed on the bottom surface of the first type semiconductor layer 101. The conductivity type of the bottom contact 03 is the same as that of the first type semiconductor layer 101. For example, if the first type semiconductor layer 101 is P-type, then the bottom contact 03 is also P-type. Similarly, if the first type semiconductor layer 101 is N-type, then the bottom contact 03 is also N-type. In some embodiments, light is emitted from the top surface of the mesa structure 01. For this purpose, the diameter of the bottom contact 03 is made larger than the diameter of the top contact 02, and the diameter of the top contact 02 is made as small as possible, such that the top contact 02 appears as a point on the top surface of the second type semiconductor layer 103. In some embodiments, the diameter of the bottom contact 03 is equal to or smaller than the diameter of the top contact 02. In some embodiments, the bottom contact 03 is configured to connect to a bottom electrode (such as a contact pad in an IC backplane). In some embodiments, the diameter of the bottom contact 03 ranges from 20 nm to 1 μm. In some embodiments, the diameter of the bottom contact 03 ranges from 800 nm to 1 μm. In some embodiments, the center of the bottom contact 03 is aligned with the center of the top contact 02 along an axis perpendicular to the upper surface of the second type semiconductor region 1031. In some embodiments, the centers of the bottom contact 03, the top contact 02, and the second type semiconductor region 1031 are all aligned along an axis perpendicular to the upper surface of the second type semiconductor region 1031. In some embodiments, the material of the bottom contact 03 comprises a transparent conductive material. In some further embodiments, the material of the bottom contact 03 comprises ITO or FTO. In some embodiments, the bottom contact 03 is opaque, and the material of the bottom contact is a conductive metal. In some embodiments, the material of the bottom contact comprises at least one of the following elements: Au, Zn, Be, Cr, Ni, Ti, Ag, and Pt.

[0041] Figure 2 This is a flowchart of a method for manufacturing a micro-LED structure consistent with the embodiments disclosed herein. Figures 3 to 12 This is a schematic illustration of what is used to implement Figure 2 A cross-sectional view of the steps of the method. It is conceivable that the disclosed manufacturing method is not limited to... Figures 3 to 12 The specific micro-LED structure shown. In conjunction with... Figures 3 to 12 In some consistent implementations, methods for manufacturing the aforementioned microLED structures are described herein.

[0042] In Figure 3 In some consistent implementations, an extensional structure is provided ( Figure 2Step 1 in the process. The epitaxial structure includes a first type semiconductor layer 101, a light-emitting layer 102, and a second type semiconductor layer 103. In some embodiments, the first type semiconductor layer 101, the light-emitting layer 102, and the second type semiconductor layer 103 are arranged in a top-to-bottom order. In some embodiments, the epitaxial structure can be formed on the substrate 00 using any epitaxial growth process known in the art. In some further embodiments, the first semiconductor layer 101 includes one or more mirrors 1011. The mirrors 1011 may be formed at the bottom surface of the first semiconductor layer 101.

[0043] In Figure 4 In some consistent embodiments, the bottom metal bonding layer 031 is deposited on the surface of the first type semiconductor layer 101. Figure 2 Step 2). The bottom metal bonding layer 031 is deposited using a chemical vapor deposition (CVD) or physical vapor deposition (PVD) process known in the art. In some further embodiments, a bottom contact 03 is formed on the first type semiconductor layer 101 prior to the deposition of the bottom metal bonding layer 031. The bottom metal bonding layer 031 is deposited on the bottom contact 03.

[0044] In Figure 5 In some consistent implementations, a metal bonding process is performed between the epitaxial structure and the conductive panel 00'. Figure 2 (Step 3) First, the epitaxial structure is placed upside down. In some embodiments, the bottom metal bonding layer 031 is bonded to contact pads on the conductive panel 00' via a metal bonding process. In some embodiments, the substrate 00 can be removed by conventional separation processes known in the art, such as laser lift-off methods. In some embodiments, the conductive panel 00' can be an IC backplane or any other integrated circuit board known in the art.

[0045] In Figures 6 to 9 In some consistent embodiments, an ion implantation region 1032 is formed in a second type semiconductor layer 103 via an ion implantation process. Figure 2 Step 4 in the process. Figures 6 to 9 In some consistent implementations, the ion implantation region 1032 is formed via an ion implantation process. In conjunction with... Figure 6 In some consistent embodiments, a mask M is formed on the second type semiconductor layer 103. More specifically, in some embodiments, a predetermined second type semiconductor region and a predetermined ion implantation region are defined in the second type semiconductor layer 103. In some embodiments, the predetermined second type semiconductor region is below the top contact 02, and the predetermined ion implantation region surrounds the predetermined second type semiconductor region. More specifically, in conjunction with... Figure 6In some consistent implementations, the predetermined second type semiconductor region is the region between the dashed lines, and the predetermined ion implantation region is the region outside the dashed lines. The predetermined second type semiconductor region is configured to form second type semiconductor region 1031, and the predetermined ion implantation region is configured to form ion implantation region 1032.

[0046] In Figure 7 In some consistent embodiments, the mask M is patterned to expose a predetermined ion implantation region. More specifically, the mask M is patterned using an etching process known in the art. After the etching process, the mask M over the predetermined second-type semiconductor region is retained, and the mask M over the predetermined ion implantation region is removed to expose the predetermined ion implantation region.

[0047] In Figure 8 In some consistent embodiments, ions are implanted into a predetermined ion implantation region. More specifically, in some embodiments, ions are implanted into a second type of semiconductor layer 103 to form an ion implantation region 1032. The ion implantation process is performed using ion implantation technology. Figure 8 In some consistent embodiments, the implanted ions are selected from one or more of hydrogen, nitrogen, fluorine, oxygen, carbon, argon, phosphorus, boron, silicon, sulfur, arsenic, chlorine, and metal ions. In some embodiments, the metal ions are selected from one or more of zinc, copper, indium, aluminum, nickel, titanium, magnesium, chromium, gallium, tin, antimony, tellurium, tungsten, tantalum, germanium, molybdenum, and platinum. More specifically, in some further embodiments, the implantation dose ranges from 10E12 to 10E16. In some embodiments, ions are also implanted into each respective reflector 1011.

[0048] In some embodiments, an ion implantation process is performed prior to the deposition of the top contact 02. In some embodiments, an ion implantation process is performed to form an ion implantation region 1032 prior to the deposition of the top contact 02, and then the top contact 02 is deposited on a predetermined second-type semiconductor region when another mask covers the ion implantation region 1032. In some further embodiments, an ion implantation process is performed after the etching process of the mesa structure 01 to form the ion implantation region 1032, and then the top contact 02 is deposited on the mesa structure 01 when another mask covers the ion implantation region 1032.

[0049] In Figure 9 In some consistent implementations, the mask M is removed from the mesa structure. In some implementations, the mask M is removed by chemical etching methods known in the art.

[0050] In Figure 10 In some consistent implementations, the mesa is formed by etching an epitaxial structure on the conductive panel 00'. Figure 2(Step 5 in the process). A mesa is formed by sequentially etching a first type semiconductor layer 101, a light-emitting layer 102, and a second type semiconductor layer 103. In some embodiments, the sidewalls of the mesa are vertical or inclined relative to a horizontal plane (e.g., substrate 00). In some embodiments, the etching process includes a dry etching process. In some embodiments, the etching process includes a plasma etching process. In some embodiments, the sidewalls of the mesa are flat, and the bottom surface of the mesa is larger than the top surface.

[0051] In Figure 11 In some consistent implementations, the top contact 02 is deposited on the second type semiconductor layer 103. Figure 2 Step 6). In a chemical vapor deposition (CVD) or physical vapor deposition (PVD) process, the top contact 02 is deposited on the top surface of the second type semiconductor layer 103. Figure 11 In some consistent implementations, the area of ​​the top contact 02 is made as small as possible. More specifically, in conjunction with Figure 11 In some further implementations, the top contact 02 is a point.

[0052] In Figure 12 In some consistent implementations, the top conductive layer 04 is formed on the mesa structure. Figure 2 (Step 7 in the text). More specifically, in some embodiments, the top conductive layer 04 is deposited on the second type semiconductor layer 103 and on the top and sidewalls of the top contact 02, covering the exposed top surfaces of the second semiconductor layer 103 and the top contact 02. The deposition of the top conductive layer 04 is performed by chemical vapor deposition methods known in the art.

[0053] In Figure 13 In some consistent embodiments, a microdisplay panel is provided. The microdisplay panel includes a microLED array and an IC backplane 05 formed beneath the microLED array. The microLED array includes a plurality of the aforementioned microLED structures. The microLED structures are electrically coupled or connected to the IC backplane 05. In some embodiments, the length of the entire microLED array is no greater than 5 cm. The length of the backplane is greater than the length of the microLED array. In some embodiments, the length of the backplane is no greater than 6 cm. The area of ​​the microLED array is the effective display area.

[0054] In some implementations, the microLED structure further includes a metal bonding structure. More specifically, the metal bonding structure includes a metal bonding layer or a connection hole. For example, as... Figure 13As shown, the metal bonding structure is a metal bonding layer 031, and the metal bonding layer 031 is coupled to the contact pads of the IC backplane. In some further embodiments, the top surface of the bottom metal bonding layer 031 is coupled to the bottom contact 03 (e.g., connected or bonded), and the bottom surface of the bottom metal bonding layer 031 is coupled to the contact pads of the IC backplane (e.g., connected or bonded). In some embodiments, the top conductive layer 04 in the microdisplay panel covers the entire display panel.

[0055] Still referencing Figure 13 The microdisplay panel further includes a dielectric layer 08. The dielectric layer 08 is formed between adjacent mesa structures 01. The dielectric layer 08 is made of a non-conductive material, thereby electrically isolating adjacent microLEDs. In some embodiments, the dielectric layer material includes at least one selected from SiO2, Si3N4, Al2O3, AlN, HfO2, TiO2, and ZrO2.

[0056] In some further embodiments, a reflective structure 07 is formed in the dielectric layer 08 between adjacent mesa structures 01 to avoid crosstalk. The cross-sectional structure of the reflective structure 07 can be an inverted triangle, an inverted rectangle, an inverted trapezoid, or any other inverted shape. In some embodiments, an ion implantation region 1032 is formed in the second type semiconductor layer 103, and the space between adjacent mesa structures 01 can be formed as small as possible. In some embodiments, the bottom of the reflective structure 07 extends downwards, below the bottom of the mesa structure 01.

[0057] Figure 14 Is with Figure 13 A flowchart of a method for manufacturing a microdisplay panel, consistent with the illustrated implementation. Figures 15 to 25 This is a schematic illustration of what is used to implement Figure 14 A cross-sectional view of the steps of the method. It is conceivable that the disclosed manufacturing method is not limited to... Figures 15 to 25 The specific micro-LED structure shown. In conjunction with... Figures 15 to 2 8. In some consistent embodiments, methods for manufacturing the aforementioned microdisplay panel are described herein.

[0058] In Figure 15 In some consistent implementations, a substrate 00 with an epitaxial structure is provided. Figure 14(Step 1 in the above steps). More specifically, the epitaxial structure includes a first type semiconductor layer 101, a light-emitting layer 102, and a second type semiconductor layer 103. In some embodiments, the first type semiconductor layer 101, the light-emitting layer 102, and the second type semiconductor layer 103 are arranged in a top-to-bottom order. In some embodiments, the epitaxial structure can be formed on the substrate 00 using any epitaxial growth process known in the art. In some further embodiments, the first type semiconductor layer 101 includes one or more mirrors 1011. The mirrors 1011 are formed on the surface of the first type semiconductor layer 101.

[0059] In Figure 16 In some consistent embodiments, the bottom metal bonding layer 031 is deposited on the surface of the first type semiconductor layer 101. Figure 14 Step 2). The bottom metal bonding layer 031 is deposited using a chemical vapor deposition (CVD) or physical vapor deposition (PVD) process known in the art. In some further embodiments, a bottom contact 03 is formed on the first type semiconductor layer 101 prior to the deposition of the bottom metal bonding layer 031. The bottom metal bonding layer 031 is deposited on the bottom contact 03.

[0060] In Figure 17 In some consistent implementations, a metal bonding process is performed between the epitaxial structure and the IC backplane 06. Figure 14 (Step 3) First, the epitaxial structure is placed upside down. In some embodiments, the bottom bonding metal layer 031 is bonded to the contact pads of the IC backplane 06 via a metal bonding process. In some embodiments, the substrate 00 can be removed by conventional separation processes known in the art, such as laser lift-off methods. In some embodiments, the IC backplane 06 can be replaced by an integrated circuit board known in the art.

[0061] In Figures 18 to 21 In some consistent embodiments, an ion implantation region 1032 is formed in a second type semiconductor layer 103 via an ion implantation process. Figure 14 Step 4 in the process. Figure 18 In some consistent embodiments, a mask M is formed on the second type semiconductor layer 103. More specifically, in some embodiments, a predetermined second type semiconductor region and a predetermined ion implantation region are defined in the second type semiconductor layer 103. In some embodiments, the predetermined second type semiconductor region is below the top contact 02, and the predetermined ion implantation region surrounds the predetermined second type semiconductor region. More specifically, in conjunction with... Figure 6In some consistent implementations, the predetermined second type semiconductor region is the region between the dashed lines, and the predetermined ion implantation region is the region outside the dashed lines. The predetermined second type semiconductor region is configured to form second type semiconductor region 1031, and the predetermined ion implantation region is configured to form ion implantation region 1032.

[0062] In Figure 19 In some consistent embodiments, the mask M is patterned to expose a predetermined ion implantation region. More specifically, the mask M is patterned using an etching process known in the art. After the etching process, the mask M over the predetermined second-type semiconductor region is retained, and the mask M over the predetermined ion implantation region is removed to expose the predetermined ion implantation region.

[0063] In Figure 20 In some consistent embodiments, ions are implanted into a predetermined ion implantation region. More specifically, in some embodiments, ions are implanted into a second type of semiconductor layer 103 to form an ion implantation region 1032. The ion implantation process is performed using ion implantation technology. Figure 8 In some consistent embodiments, the implanted ions are selected from one or more of hydrogen, nitrogen, fluorine, oxygen, carbon, argon, phosphorus, boron, silicon, sulfur, arsenic, chlorine, and metal ions. In some embodiments, the metal ions are selected from one or more of zinc, copper, indium, aluminum, nickel, titanium, magnesium, chromium, gallium, tin, antimony, tellurium, tungsten, tantalum, germanium, molybdenum, and platinum. More specifically, in some further embodiments, the implantation dose ranges from 10E12 to 10E16. In some embodiments, ions are also implanted into each respective reflector 1011.

[0064] In some embodiments, an ion implantation process is performed prior to the deposition of the top contact 02. In some embodiments, an ion implantation process is performed to form an ion implantation region 1032 prior to the deposition of the top contact 02, and then the top contact 02 is deposited on a predetermined second-type semiconductor region when another mask covers the ion implantation region 1032. In some further embodiments, an ion implantation process is performed after the etching process of the mesa structure 01 to form the ion implantation region 1032, and then the top contact 02 is deposited on the mesa structure 01 when another mask covers the ion implantation region 1032.

[0065] In Figure 21 In some consistent implementations, the mask M is removed from the mesa structure. In some implementations, the mask M is removed by chemical etching methods known in the art.

[0066] In Figure 22 In some consistent implementations, the mesa is formed by etching an epitaxial structure on the conductive panel 00'. Figure 14(Step 5 in the process). A mesa is formed by sequentially etching a first type semiconductor layer 101, a light-emitting layer 102, and a second type semiconductor layer 103. In some embodiments, the sidewalls of the mesa are vertical or inclined relative to a horizontal plane (e.g., substrate 00). In some embodiments, the etching process includes a dry etching process. In some embodiments, the etching process includes a plasma etching process. In some embodiments, the sidewalls of the mesa are flat, and the bottom surface of the mesa is larger than the top surface.

[0067] In Figure 23 In some consistent implementations, a dielectric layer 08 is formed between adjacent mesa structures 01. Figure 14 (Step 6 in the process). More specifically, dielectric layer 08 is deposited on the top surface and sidewalls of mesa structure 01 and on the IC backplane, covering mesa structure 01. The top of dielectric layer 08 is etched into the top of mesa structure 01 using an etching process known in the art.

[0068] Still referencing Figure 23 A reflective structure 07 is formed in a dielectric layer 08 between adjacent mesa structures 01. In some embodiments, the reflective structure 07 is formed by etching the dielectric layer 08 between adjacent mesa structures 01 using a first protective mask to create trenches. In some embodiments, a protective mask is formed on the mesa structures 01 and the dielectric layer 08, exposing the trench areas and protecting unwanted etched areas. In some embodiments, a reflective material is filled into the trenches to form the reflective structure 07 between adjacent mesa structures 01. In some embodiments, during the filling of the reflective material, a second protective mask is formed on the mesa structures 01 and the dielectric layer 08, exposing the trenches. In some embodiments, the first protective mask is etched to a certain thickness and not completely removed to protect unwanted filled areas during the filling of the reflective material. The second protective mask is not formed. In some embodiments, the reflective structure 07 can also be formed between adjacent mesa structures 01 after the top contact 02 is formed.

[0069] In Figure 24 In some consistent implementations, a top contact 02 is deposited on the platform structure 01. Figure 14 Step 7). In a chemical vapor deposition (CVD) or physical vapor deposition (PVD) process, the top contact 02 is deposited on the top surface of the second type semiconductor layer 103. Figure 24 In some consistent implementations, the area of ​​the top contact 02 is made as small as possible. More specifically, in conjunction with Figure 24 In some further implementations, the top contact 02 is a point.

[0070] In some embodiments, a patterned mask is applied to cover the mesa structure 01 by exposing a portion of the surface of the second semiconductor layer 103. In some embodiments, the patterned mask is a patterned photoresist mask. The patterned mask may be deposited on the surface of the second semiconductor layer 103 and form a top contact 02.

[0071] In some embodiments, an ion implantation process is performed prior to the etching of the mesa structure 01. In some embodiments, after the etching of the mesa structure 01, an ion implantation process may be performed first to form the ion implantation region 1032, and then the top contact 02 may be deposited.

[0072] In Figure 25 In some consistent embodiments, a top conductive layer 04 is formed on the mesa structure 01 and the dielectric layer 08. Figure 14 (Step 8 in the process). More specifically, a top conductive layer 08 is deposited on the second type semiconductor layer 103, the top and sidewalls of the top contact 02, and the dielectric layer 08, covering the exposed top surfaces of the second semiconductor layer 103, the top contact 02, and the dielectric layer 08. The deposition of the top conductive layer 04 is performed by a chemical vapor deposition method known to those skilled in the art.

[0073] Other embodiments of the invention will be apparent to those skilled in the art from the description and practice of the invention disclosed herein. The description and examples are intended to be illustrative only, and the appended claims indicate the true scope and spirit of the invention.

Claims

1. A micro light emitting diode (LED) structure comprising: a mesa structure comprising: a first semiconductor layer having a first conductivity type; a light emitting layer formed on the first semiconductor layer; and a second semiconductor layer formed on the light emitting layer, the second semiconductor layer having a second conductivity type different from the first conductivity type; wherein a bottom surface area of the first semiconductor layer is greater than each of a top surface area of the first semiconductor layer, a bottom surface area of the second semiconductor layer, and a top surface area of the second semiconductor layer; and wherein the second semiconductor layer comprises: a semiconductor region; and an ion implant region formed around the semiconductor region, the ion implant region having a higher electrical resistance than the semiconductor region; wherein the micro LED structure further comprises: a top contact formed on a top surface of the second semiconductor layer, the top contact having the second conductivity type; and a bottom contact formed on a bottom surface of the first semiconductor layer, the bottom contact having the first conductivity type; wherein a diameter of the semiconductor region is less than or equal to three times a diameter of the top contact; and a diameter of the ion implant region is greater than two times the diameter of the semiconductor region.

2. The micro-LED structure of claim 1, wherein, a center of the bottom contact, a center of the top contact, and a center of the semiconductor region are aligned along a same axis perpendicular to the top surface of the second semiconductor layer.

3. The micro-LED structure of claim 1, further comprising: a top conductive layer formed on the second semiconductor layer and the top contact.

4. The micro-LED structure of claim 1, wherein, the mesa structure comprises a planar sidewall.

5. The micro-LED structure of claim 1, wherein, the ion implant region comprises at least one type of implanted ion.

6. The micro-LED structure of claim 5, wherein, the implanted ion is selected from one or more of the following ions: hydrogen, nitrogen, fluorine, oxygen, carbon, argon, phosphorus, boron, silicon, sulfur, arsenic, chlorine, and a metal ion.

7. The micro-LED structure of claim 6, wherein, the metal ion is selected from one or more of zinc, copper, indium, aluminum, nickel, titanium, magnesium, chromium, gallium, tin, antimony, tellurium, tungsten, tantalum, germanium, molybdenum, and platinum.

8. The micro-LED structure of claim 1, wherein, a thickness of the first semiconductor layer is greater than a thickness of the second semiconductor layer.

9. The micro-LED structure of claim 8, wherein, the thickness of the first semiconductor layer ranges from 700 nm to 2 pm, and the thickness of the second semiconductor layer ranges from 100 nm to 200 nm.

10. The micro LED structure of claim 1, wherein, a thickness of the semiconductor region is greater than or equal to a thickness of the ion implant region.

11. The micro LED structure of claim 10, wherein, the thickness of the semiconductor region ranges from 100 nm to 200 nm, the thickness of the ion implant region ranges from 100 nm to 150 nm, a diameter of the ion implant region ranges from 100 nm to 1200 nm, and a diameter of the top contact ranges from 20 nm to 50 nm.

12. The micro-LED structure of claim 1, wherein, a thickness of the light emitting layer is less than a thickness of the first semiconductor layer.

13. The micro-LED structure of claim 1, wherein, the light emitting layer is formed from a quantum well layer located between the first semiconductor layer and the second semiconductor layer.

14. The micro-LED structure of claim 13, wherein, a thickness of the quantum well layer is less than or equal to 30 nm.

15. The micro-LED structure of claim 13, wherein, the quantum well layer comprises three or less than three pairs of quantum wells.

12. The micro LED structure of claim 1, wherein: the first semiconductor layer comprises a first doped region having a first doping concentration, and the second semiconductor layer comprises a second doped region having a second doping concentration different from the first doping concentration.

16. The micro-LED structure of claim 1, wherein, further comprising a first mirror formed on a bottom surface of the first semiconductor layer.

17. The micro-LED structure of claim 16, wherein, further comprising a second mirror formed inside the first semiconductor layer.

18. A micro display panel comprising: a micro light emitting diode (LED) array comprising: at least one micro LED structure according to claim 1, the at least one micro LED structure comprising a first micro LED structure comprising a first mesa structure; and an integrated circuit (IC) backplane formed underneath the first micro LED structure, wherein the first micro LED structure is electrically coupled to the IC backplane.

19. The microdisplay panel of claim 18, wherein, the first micro LED structure further comprising: a bottom contact, and a bottom metal bonding structure; wherein a top surface of the bottom metal bonding structure is coupled to the bottom contact and a bottom surface of the metal bonding structure is coupled to the IC backplane.

20. The micro display panel of claim 19, wherein: the bottom metal bonding structure comprises a connection hole or a metal bonding layer, and the micro display panel further comprises a top conductive layer formed on a top surface of the first mesa structure.

21. The micro display panel of claim 18, wherein: the at least one micro LED structure further comprises a second micro LED structure comprising a second mesa structure; and the micro display panel further comprises a dielectric layer, wherein the second mesa structure is located adjacent to the first mesa structure, and wherein the dielectric layer is non-conductive and formed between the first mesa structure and the second mesa structure.

22. The microdisplay panel of claim 21, wherein, a material of the dielectric layer is at least one of SiO2, Si3N4, Al2O3, AlN, HfO2, TiO2, and ZrO2.

23. The micro display panel of claim 21, further comprising a reflective structure formed in the dielectric layer and between the first mesa structure and the second mesa structure, wherein, the reflective structure does not contact the first mesa structure and the second mesa structure.

24. The microdisplay panel of claim 23, wherein, the reflective structure has: a top surface aligned with top surfaces of the first mesa structure and the second mesa structure; and a bottom surface aligned with bottom surfaces of the first mesa structure and the second mesa structure.

25. The microdisplay panel of claim 21, wherein, top surfaces of the first mesa structure and the second mesa structure are separated by a distance less than or equal to 200 nm.

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