Atomic layer deposition device and method for preparing pan-semiconductor material

Abstract

The present invention provides an atomic layer deposition device and method for preparing a pan-semiconductor material, and relates to the technical field of atomic layer deposition devices, so as to solve the technical problem that the atomic layer deposition devices in the prior art cannot take into account low cost, high accuracy and high stability. The atomic layer deposition device for preparing a pan-semiconductor material comprises an outer chamber, an inner chamber and a main exhaust pipe, wherein an outer cavity is arranged in the outer chamber, an inner cavity is arranged in the inner chamber, the inner chamber is arranged in the outer cavity, a first exhaust pipe connected to the main exhaust pipe is connected to the rear side wall of the outer chamber, a second exhaust pipe passing through the outer chamber and connected to the main exhaust pipe is connected to the rear side wall of the inner chamber, the main exhaust pipe is connected to a vacuum system, the outer chamber is provided with a gas replenishment port connected to the gas replenishment system, a first vacuum pressure gauge is arranged in the outer cavity, a second vacuum pressure gauge is arranged in the inner cavity, and the first vacuum pressure gauge and the second vacuum pressure gauge are electrically connected to the gas replenishment system. The present invention also relates to an atomic layer deposition method for preparing a pan-semiconductor material, which adopts the above-mentioned atomic layer deposition device.

Description

Technical Field

[0001] The present invention relates to the technical field of atomic layer deposition equipment, and specifically refers to an atomic layer deposition equipment and method for preparing pan-semiconductor materials. Background Art

[0002] Atomic layer deposition (ALD) is a thin film deposition technology based on surface self-limiting reaction. By alternately passing multiple gas precursors into the chamber in pulses, a gas-solid chemical adsorption reaction occurs on the substrate surface to form a thin film. An ALD deposition cycle usually includes the following four steps:

[0003] (1) introducing the first reaction precursor to chemically adsorb or react with the substrate surface;

[0004] (2) using an inert gas to purge excess first precursor and by-products out of the reaction chamber;

[0005] (3) introducing a second reaction precursor to chemically react with the first reaction precursor adsorbed on the surface of the substrate or with the product of the reaction between the first reaction precursor and the substrate to form a coating;

[0006] (4) The remaining second reaction precursor and by-products are again removed from the reaction chamber using an inert gas.

[0007] Since the chemical reaction of a new layer of atomic film is directly related to the previous layer, only one layer of atoms is deposited in each cycle. The thickness of the film can be precisely controlled by adjusting the number of deposition cycles, with an accuracy of nanometers. The self-limited growth feature allows the film to be deposited conformally and without pinholes on the substrate, with excellent uniformity and conformality.

[0008] In recent years, ALD technology has developed rapidly and has been widely used in photovoltaic cells, semiconductor materials, optical films and other fields. Taking photovoltaic cells as an example, TOPCon (tunneling oxide passivated contact) cells are high-efficiency solar energy technologies that have received widespread attention in the photovoltaic industry in recent years. There is a layer of aluminum oxide film on the front of the TOPCon cell, which has a high negative charge density and can provide good field effect passivation for the front of the TOPCon cell, that is, adding a layer of dielectric film with a highly stable charge near the surface to form a gradient electric field near the surface, reducing the surface electron concentration, thereby reducing the recombination rate of surface electron holes. Aluminum oxide films can be prepared by ALD, PECVD, APCVD and sputtering. Among them, the ALD method has the advantages of low reaction temperature, uniform film formation, and low film defect density, and has gradually become one of the mainstream choices.

[0009] In view of the fact that the ALD process effect is directly and closely related to the flow field and thermal field, the ALD reaction chamber used for large-volume and large-batch processing such as TOPCon passivation layer preparation usually adopts an inner and outer double-layer cavity structure. The inner cavity is the reaction chamber, which is placed inside the outer cavity, which can effectively improve the stability of the cavity flow field and thermal field; the outer cavity is a pressure-regulating cavity. During the process, the inner and outer cavities need to be evacuated at the same time to ensure that the pressure difference between the inside and outside of the inner cavity is small to prevent deformation; at the same time, the pressure of the outer cavity must be controlled to be always equal to or slightly higher than that of the inner cavity to prevent toxic and flammable gases in the inner cavity from leaking out and particulate matter deposition from causing blockage.

[0010] The current pressure regulation method used in the industry is to make the inner and outer chamber vacuum ports independent of each other, and adjust the pressure of the inner and outer chambers respectively. Although this method can achieve precise control of the overall pressure difference and make the inner chamber pressure tend to the set value, it requires two vacuum systems, which will significantly increase the equipment manufacturing and maintenance costs. In addition, the two vacuum ports may interfere with each other during vacuuming, causing excessive local pressure deviation, resulting in vibration or even deformation of the cavity and poor stability. In addition, the above method will interfere with the stability of the inner cavity flow field during the pressure regulation process, resulting in poor process uniformity and stability.

[0011] Therefore, developing a low-cost, high-accuracy, and high-stability ALD chamber is one of the urgent issues that need to be addressed in order to improve the overall production efficiency of photovoltaic cells, semiconductor materials, optical films, and many other fields. Summary of the invention

[0012] In view of the shortcomings of the prior art, the first object of the present invention is to provide an atomic layer deposition device for preparing pan-semiconductor materials, so as to solve the technical problem that the atomic layer deposition device in the prior art cannot achieve low cost, high accuracy and high stability at the same time.

[0013] In order to solve the above technical problems, the present invention provides an atomic layer deposition device for preparing pan-semiconductor materials, including an outer chamber, an inner chamber and a main exhaust pipe. The outer chamber and the inner chamber are both rectangular, the outer chamber is provided with an outer cavity, the inner chamber is provided with an inner cavity, the inner chamber is arranged in the outer cavity, the inner cavity is used to accommodate a substrate to be deposited, a first exhaust pipe connected to the outer cavity is connected to the rear side wall of the outer chamber, the first exhaust pipe is connected to the main exhaust pipe, a second exhaust pipe connected to the inner cavity is connected to the rear side wall of the inner chamber, the second exhaust pipe passes through the outer chamber and is connected to the main exhaust pipe, the main exhaust pipe is connected to a vacuum system, the outer chamber is provided with a gas supply port connected to the outer cavity, the gas supply port is connected to the gas supply system, a first vacuum pressure gauge is provided in the outer cavity, a second vacuum pressure gauge is provided in the inner cavity, the first vacuum pressure gauge and the second vacuum pressure gauge are electrically connected to the gas supply system.

[0014] After adopting the above structure, the atomic layer deposition equipment for preparing pan-semiconductor materials in the present invention has the following advantages: the second exhaust pipe of the inner cavity and the first exhaust pipe of the outer cavity are both connected to the main exhaust pipe, so that the gas outlet ends of the inner and outer cavities are connected. During the process, a vacuum system is used to evacuate the outer cavity and the inner cavity respectively through the main exhaust pipe and the first exhaust pipe and the second exhaust pipe at the same time, so as to ensure that the pressures of the inner and outer cavities are consistent while reducing the manufacturing and maintenance costs of the equipment. The first exhaust pipe and the second exhaust pipe are arranged on the same side to reduce the interference between the inner and outer cavities and ensure the stability of the flow field of the inner cavity. During the pressure adjustment process, the first vacuum pressure gauge and the second vacuum pressure gauge monitor the pressures of the outer cavity and the inner cavity respectively, so as to adjust the pressure of the inner cavity by using the air supply system and the air supply port to supply air to the outer cavity. The exhaust pipe connecting the inner and outer cavities makes the pressure of the inner cavity gradually approach the set target pressure, taking into account low cost, high accuracy and high stability.

[0015] As an improvement, the position ratio of the first vacuum pressure gauge in the front-to-back direction of the outer cavity is the same as the position ratio of the second vacuum pressure gauge in the front-to-back direction of the inner cavity; when evacuating the cavity, the pressure at different positions of the inner cavity will have a certain deviation, and the same is true for the outer cavity. However, since the first exhaust pipe and the second exhaust pipe are both arranged on the rear side, the pressure distribution law of the outer cavity and the inner cavity is consistent in the front-to-back direction. The first vacuum pressure gauge and the second vacuum pressure gauge are distributed in the same position ratio to ensure consistency and improve the accuracy of pressure regulation.

[0016] As an improvement, the outer chamber is provided with a first opening at the front end, the outer chamber is connected to a first door body for blocking the first opening, the inner chamber is provided with a second opening at the front end, the inner chamber is connected to a second door body for blocking the second opening, the first door body is connected to a linkage rod slidably connected to the second door body, and the linkage rod is sleeved with a spring abutting between the first door body and the second door body. When the first door body blocks the first opening, the second door body blocks the second opening and the spring is compressed. With this structure, when closing the first door body and the second door body, the second door body first blocks the second opening, and the first door body continues to move in the direction of blocking the first opening, so that the spring is compressed and applies elastic force to the second door body, thereby pressing the second door body, realizing the simultaneous vacuum sealing of the inner cavity and the outer cavity, which can avoid the interference of the pressure regulation of the outer cavity on the inner cavity, and ensure the stable and reliable process.

[0017] As an improvement, a first sealing ring is provided between the first door body and the front end face of the outer chamber, and a second sealing ring is provided between the second door body and the front end face of the inner chamber. The second sealing ring is pressed after the spring is compressed. This structure ensures that the second opening of the inner chamber and the outer cavity are completely airtight, improves the sealing between the first door body and the outer chamber, and the sealing between the second door body and the inner chamber, and further improves the process stability and reliability.

[0018] As an improvement, an air supply port is respectively provided on the left and right side walls of the outer chamber, and the two air supply ports are arranged oppositely; with this structure, air is supplied from the left and right sides at the same time, thereby improving the uniformity of the air pressure inside the outer cavity.

[0019] As an improvement, the inner chamber is connected to a uniform gas assembly, which includes a diffusion tube and a guide plate. The guide plate is located in the inner cavity and is arranged near the front end of the inner chamber. The guide plate is connected to the upper end of the inner chamber. A guide cavity is provided in the guide plate and the guide cavity forms a third opening at the front end of the guide plate. The upper end of the diffusion tube is connected to the guide plate and is connected to the main air inlet pipe after passing through the upper end surface of the inner chamber. The lower end of the diffusion tube is located in the guide cavity and is provided with a number of uniform gas ports arranged downward. With this structure, when the inner cavity is intaken, the airflow is first blown into the guide cavity and hits the guide plate and then diffuses outward. After hitting the front end surface of the inner chamber, it is reversed and passes into the inner cavity. The gas path of this structure is simple, without too many gas distribution pipes or spray holes. When the two precursor gases are switched, it is not easy for them to remain in the gas distribution pipes or spray holes, which is more conducive to the process stability of the time-interval ALD reaction.

[0020] As an improvement, the part of the first exhaust pipe located outside the outer chamber and the part of the second exhaust pipe located in the outer cavity and outside the outer chamber are bellows; with this structure, the bellows can offset possible assembly errors and buffer possible vibrations during the vacuum process, further improving the flow field stability.

[0021] As an improvement, each outer wall of the inner chamber is connected to one or more heating plates, and a gap of less than 10 mm is provided between each heating plate and the outer wall of the inner chamber. With this structure, the heating plate arranged at the inner wall of the outer chamber in the prior art is arranged on the outer wall of each inner chamber, which effectively improves the heating rate and uniformity, and controls the heating plate and the inner wall of the outer chamber to be in a (sub) vacuum state, which is beneficial to heat insulation and improves the heating efficiency of the inner cavity. Multiple heating plates wrap the inner cavity, which can realize independent monitoring and adjustment of multiple temperature zones, making temperature adjustment more flexible and providing more room for process optimization. In addition, the heating plate is generally wound with a heating wire. If it is directly attached to the outer wall of the inner chamber, there may be a problem of poor uniformity in conduction heating, while leaving a gap for better uniformity in heating by thermal radiation.

[0022] The second object of the present invention is to provide an atomic layer deposition method for preparing a pan-semiconductor material, using the above-mentioned atomic layer deposition device for preparing a pan-semiconductor material, comprising the following steps:

[0023] S1, placing the substrate to be deposited at a set position in the inner cavity;

[0024] S2. Use a vacuum system to evacuate the outer cavity and the inner cavity to a set pressure, the set pressure range is 500-800 mbar, and then use a heating plate arranged on the outer wall of the inner and outer chambers to heat the inner cavity temperature to 50-400°C;

[0025] S3, using the vacuum system to evacuate the outer cavity and the inner cavity to a set bottom pressure, the set bottom pressure range is 0.5-2mbar, and the inner cavity and the outer cavity are detected to see if there is leakage by monitoring the change of the vacuum value. If there is no leakage, proceed to the next step;

[0026] S4, introducing purge gas into the inner cavity for purging, which lasts for 30-90 seconds;

[0027] S5, using the vacuum system to evacuate the outer cavity and the inner cavity to a set pressure, wherein the set pressure range is 1-20 mbar. During this process, according to the pressure feedback results of the first vacuum pressure gauge and the second vacuum pressure gauge, the air supply system and the air supply port are used to supply air to the outer cavity based on PID control to control the pressure of the inner cavity to approach the set target pressure, and the next step is entered after the pressure of the inner cavity and the outer cavity is stable;

[0028] S6, introducing the first precursor into the inner cavity for 5-20 seconds, then purging with nitrogen for 15-30 seconds, introducing the second precursor after purging for 5-20 seconds, and then purging with nitrogen again for 15-30 seconds; this process is repeated 1-100 times, and during the process, according to the pressure feedback results of the first vacuum pressure gauge and the second vacuum pressure gauge, the air supply system and the air supply port are used to supply air to the outer cavity based on PID control to control the pressure of the inner cavity to approach the set target pressure, and the target pressure range is 1-20mbar;

[0029] S7, using the vacuum system to evacuate the outer cavity and the inner cavity to a set pressure, the set pressure range is 0.5-1mbar, and nitrogen is introduced into the inner cavity to a set pressure, the set pressure range is 500-800mbar; this process is repeated 2-5 times, and according to the pressure feedback results of the first vacuum pressure gauge and the second vacuum pressure gauge, the outer cavity is replenished with air using the air replenishment system and the air replenishment port based on PID control to control the pressure of the inner cavity to approach the set target pressure;

[0030] S8, nitrogen is introduced into the inner cavity and the outer cavity simultaneously until the gas pressure reaches atmospheric pressure. In this process, according to the pressure feedback results of the first vacuum pressure gauge and the second vacuum pressure gauge, gas is replenished into the outer cavity by using the gas replenishment system and the gas replenishment port based on PID control to control the pressure of the inner cavity to approach the set target pressure;

[0031] S9. Take out the substrate.

[0032] After adopting the above method, the atomic layer deposition method for preparing pan-semiconductor materials in the present invention has the following advantages: the second exhaust pipe of the inner cavity and the first exhaust pipe of the outer cavity are both connected to the main exhaust pipe, so that the gas outlet ends of the inner and outer cavities are connected. During the process, a vacuum system is used to evacuate the outer cavity and the inner cavity through the main exhaust pipe and the first exhaust pipe and the second exhaust pipe respectively, thereby ensuring that the pressures of the inner and outer cavities are consistent while reducing the equipment manufacturing and maintenance costs. The first exhaust pipe and the second exhaust pipe are arranged on the same side to reduce the interference between the inner and outer cavities and ensure the stability of the flow field of the inner cavity. During the pressure adjustment process, the first vacuum pressure gauge and the second vacuum pressure gauge monitor the pressures of the outer cavity and the inner cavity respectively, and the air supply system and the air supply port are used to supply air to the outer cavity to adjust the pressure of the inner cavity. The exhaust pipe connecting the inner and outer cavities makes the pressure of the inner cavity gradually approach the set target pressure, thereby taking into account low cost, high accuracy and high stability.

[0033] As an improvement, in step S3, according to the pressure feedback results of the first vacuum pressure gauge and the second vacuum pressure gauge, the air supply system and the air supply port are used to supply air to the outer cavity based on PID control to control the inner cavity pressure to approach the set target pressure. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a structural schematic diagram of the present invention.

[0035] Figure 2 It is a schematic diagram of the connection structure between the inner chamber and the gas homogenizing component in the present invention.

[0036] Figure 3 It is a schematic diagram of the structure of the gas homogenizing component in the present invention.

[0037] Figure numerals: 1, outer chamber; 100, outer cavity; 2, inner chamber; 200, inner cavity; 3, main exhaust pipe; 4, first exhaust pipe; 5, second exhaust pipe; 6, air supply port; 7, first vacuum pressure gauge; 8, second vacuum pressure gauge; 9, first door body; 10, second door body; 11, linkage rod; 12, spring; 13, air uniformity assembly; 131, diffusion tube; 132, guide plate; 14, guide cavity; 15, third opening; 16, air uniformity port; 17, bellows; 18, heating plate; 19, gap. DETAILED DESCRIPTION

[0038] The atomic layer deposition device and method for preparing pan-semiconductor materials of the present invention are described in detail below in conjunction with the accompanying drawings.

[0039] like Figures 1 to 3As shown, an atomic layer deposition device for preparing pan-semiconductor materials includes an outer chamber 1, an inner chamber 2 and a main exhaust pipe 3. The outer chamber 1 and the inner chamber 2 are both rectangular or approximately rectangular in design. The outer chamber 1 is provided with an outer cavity 100, and the inner chamber 2 is provided with an inner cavity 200. The inner chamber 2 is arranged in the outer cavity 100. The inner cavity 200 is used to accommodate the substrate to be deposited. The size of the inner cavity 200 is adapted to the size of the substrate to be deposited, and can completely accommodate the substrate and has sufficient mechanical movement space. A base is arranged at the bottom of the outer cavity 100, and a support leg is arranged at the bottom of the inner chamber 2. The base and the support leg can be fixed by screws to connect the inner chamber 2 to the outer chamber 1. The specific connection method between the inner chamber 2 and the outer chamber 1 and the method of fixing the substrate in the inner cavity 200 are all prior art, which will not be repeated here. In this embodiment, the deposition of the aluminum oxide passivation layer of the TOPCon battery is taken as an example.

[0040] like Figure 1 and Figure 2 As shown, the outer chamber 1 and the inner chamber 2 are both surrounded by the upper and lower bottom plates, the left and right side plates and the rear cover plate. The outer chamber 1 is provided with a first opening at the front end, and the outer chamber 1 is connected to a first door body 9 for blocking the first opening. The inner chamber 2 is provided with a second opening at the front end, and the inner chamber 2 is connected to a second door body 10 for blocking the second opening. The first door body 9 is connected to a linkage rod 11 that is slidably connected to the second door body 10. The linkage rod 11 is sleeved with a spring 12 that abuts between the first door body 9 and the second door body 10. When the first door body 9 blocks the first opening, the second door body 10 blocks the second opening and the spring 12 is compressed; wherein the spring 12 is a high temperature resistant material, preferably 316 stainless steel, and other metal materials with good high temperature resistance and corrosion resistance can also be selected. In this embodiment, there are two linkage rods 11 and springs 12. The first door body 9 can be driven by a driving mechanism such as a cylinder. When the first door body 9 and the second door body 10 are opened, it is convenient for the pick-and-place mechanism to horizontally deliver the substrate to be deposited into the inner cavity 200. The pick-and-place mechanism includes a cache platform, on which there is a set of rapid positioning devices for the metal boat loaded with silicon wafers. The positioning device uses the plane of the bottom and one side end face of the metal boat as the reference surface, and accurately fixes the metal boat by contacting the positioning block with the reference surface; the pick-and-place mechanism also includes a set of transmission mechanisms, which can transport the metal boat loaded with silicon wafers in and out radially and horizontally along the inner cavity 200 and the outer cavity 100, or can transport the metal boat up and down outside the outer cavity 100 to different reaction chambers (outer cavity 100 and inner cavity 200), or can place the metal boat on the cache platform for other process pick-and-place. The specific structure of the pick-and-place mechanism is the prior art and will not be repeated here. In addition, a first sealing ring is provided between the first door body 9 and the front end face of the outer chamber 1, and a second sealing ring is provided between the second door body 10 and the front end face of the inner chamber 2. The spring 12 is compressed and presses the second sealing ring. The linkage rod 11 and the second door body 10 are also matched in a sliding seal to achieve a fully airtight design.

[0041] like Figure 1As shown, a first exhaust pipe 4 communicating with the outer cavity 100 is connected to the rear side wall of the outer chamber 1, and the first exhaust pipe 4 is connected to the main exhaust pipe 3. A second exhaust pipe 5 communicating with the inner cavity 200 is connected to the rear side wall of the inner chamber 2, and the second exhaust pipe 5 passes through the outer chamber 1 and is connected to the main exhaust pipe 3. The main exhaust pipe 3 is connected to a vacuum system. The connection between the first exhaust pipe 4 and the outer chamber 1 can improve the sealing performance by a sealing ring and other structures. Similarly, the connection between the second exhaust pipe 5 and the inner chamber 2 and the outer chamber 1 can also improve the sealing performance by a sealing ring and other structures. In addition, as Figure 1 As shown, the portion of the first exhaust pipe 4 located outside the outer chamber 1 and the portion of the second exhaust pipe 5 located in the outer cavity 100 and outside the outer chamber 1 are bellows 17; specifically, an exhaust port is arranged on the rear side wall of the outer chamber 1, the first exhaust pipe 4 is connected to the exhaust port, and the portion of the first exhaust pipe 4 connected to the exhaust port is the bellows 17; similarly, an exhaust port is also arranged on the rear side wall of the inner chamber 2, and correspondingly, another exhaust port corresponding to the exhaust port on the inner chamber 2 is arranged on the rear side wall of the outer chamber 1, the second exhaust pipe 5 connected between the two exhaust ports is the bellows 17, and the portion of the second exhaust pipe 5 connected to the exhaust port of the outer chamber 1 and located outside the outer chamber 1 is also the bellows 17, and the material of the bellows 17 is preferably 316 stainless steel, and other metal materials with good high temperature resistance and corrosion resistance can also be selected.

[0042] like Figure 1 As shown, each outer wall of the inner chamber 2 is connected to one or more heating plates 18, and a gap 19 less than 10 mm is provided between each heating plate 18 and the outer wall of the inner chamber 2; wherein the front heating plate 18 is connected to the second door body 10 and moves together.

[0043] like Figure 1 As shown, the outer chamber 1 is provided with an air supply port 6 connected to the outer cavity 100, and the air supply port 6 is connected to the air supply system. In this embodiment, an air supply port 6 is respectively provided on the left and right side walls of the outer chamber 1 and the two air supply ports 6 are relatively arranged, that is, the left and right positions of the two air supply ports 6 are the same. The specific structure of the air supply system is the existing technology and will not be repeated here.

[0044] like Figure 1 As shown, a first vacuum pressure gauge 7 is provided in the outer cavity 100, and a second vacuum pressure gauge 8 is provided in the inner cavity 200. The first vacuum pressure gauge 7 and the second vacuum pressure gauge 8 are electrically connected to the air supply system; the position ratio of the first vacuum pressure gauge 7 in the front-to-back direction of the outer cavity 100 is the same as the position ratio of the second vacuum pressure gauge 8 in the front-to-back direction of the inner cavity 200; for example, if the first vacuum pressure gauge 7 is at one-fifth of the outer cavity 100 from back to front, the second vacuum pressure gauge 8 is also at one-fifth of the inner cavity 200 from back to front.

[0045] like Figure 2 and Figure 3As shown, the inner chamber 2 is connected to a gas uniforming component 13, and the gas uniforming component 13 includes a diffusion tube 131 and a guide plate 132. The guide plate 132 is located in the inner cavity 200 and is arranged near the front end of the inner chamber 2, that is, near the second door body 10. The guide plate 132 is connected to the upper end of the inner chamber 2. A guide cavity 14 is provided in the guide plate 132, and the guide cavity 14 forms a third opening 15 at the front end of the guide plate 132, so that the guide plate 132 is a right-angle C-shape as a whole. The upper end of the diffusion tube 131 is connected to the guide plate 132 and is connected to the main air intake pipe after passing through the upper end surface of the inner chamber 2. The specific structure of the main air intake pipe is the prior art. The lower end of the diffusion tube 131 is located in the guide cavity 14 and is provided with a plurality of downwardly arranged gas uniforming ports 16. After the gas is ejected from the gas uniforming port 16, it hits the guide plate 132, and then hits the second door body 10 to the left, and then enters the inner cavity 200 backward.

[0046] The present invention also relates to an atomic layer deposition method for preparing a pan-semiconductor material, using the above-mentioned atomic layer deposition device for preparing a pan-semiconductor material, comprising the following steps:

[0047] S1, placing the substrate to be deposited at a set position in the inner cavity 200, specifically, placing a metal boat loaded with the silicon wafer to be deposited on the buffer platform of the pick-and-place mechanism, positioning the metal boat through the self-positioning function of the buffer platform, and sending the metal boat to the set position in the inner cavity 200 through the pick-and-place mechanism;

[0048] S2, using a vacuum system to evacuate the outer cavity 100 and the inner cavity 200 to a set pressure, the set pressure range is 500-800 mbar, and then using a heating plate 18 disposed on the outer wall of the inner chamber 2 to heat the temperature of the inner cavity 200 to 50-400° C.;

[0049] S3, using the vacuum system to evacuate the outer cavity 100 and the inner cavity 200 to a set bottom pressure, the bottom pressure range is set to 0.5-2mbar, and the inner cavity 200 and the outer cavity 100 are detected to be leaking by monitoring the change of the vacuum value. If there is no leakage, proceed to the next step; if there is leakage, the device is repaired; in this process, according to the pressure feedback results of the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8, the air supply system and the air supply port 6 are used to supply air to the outer cavity 100 based on PID control to control the pressure of the inner cavity 200 to approach the set target pressure;

[0050] S4, introducing a purge gas into the inner cavity 200 for purging for 30-90 seconds, wherein the purge gas is preferably nitrogen, hydrogen, etc.;

[0051] S5, using the vacuum system to evacuate the outer cavity 100 and the inner cavity 200 to a set pressure, wherein the set pressure range is 1-20 mbar. During this process, according to the pressure feedback results of the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8, the air supply system and the air supply port 6 are used to supply air to the outer cavity 100 based on PID control to control the pressure of the inner cavity 200 to approach the set target pressure, and the next step is entered after the pressures of the inner cavity 200 and the outer cavity 100 are stabilized;

[0052] S6, introducing the first precursor into the inner cavity 200 for 5-20 seconds, then purging with nitrogen for 15-30 seconds, introducing the second precursor after purging for 5-20 seconds, and then purging with nitrogen again for 15-30 seconds; this process is repeated 1-100 times, and during the process, according to the pressure feedback results of the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8, the outer cavity 100 is replenished with gas using the gas replenishment system and the gas replenishment port 6 based on PID control to control the pressure of the inner cavity 200 to approach the set target pressure, and the target pressure range is 1-20mbar; wherein, the first precursor includes trimethylaluminum TMA, etc., and the second precursor includes water vapor, oxygen, ozone and nitrous oxide, etc., and the number of cycles is adjusted according to different process requirements;

[0053] S7, using the vacuum system to evacuate the outer cavity 100 and the inner cavity 200 to a set pressure, the set pressure range is 0.5-1 mbar, and nitrogen is introduced into the inner cavity 200 to a set pressure, the set pressure range is 500-800 mbar; this process is repeated 2-5 times, and according to the pressure feedback results of the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8, the outer cavity 100 is replenished with gas using the gas replenishment system and the gas replenishment port 6 based on PID control to control the pressure of the inner cavity 200 to approach the set target pressure;

[0054] S8, nitrogen is introduced into the inner cavity 200 and the outer cavity 100 simultaneously until the gas pressure reaches atmospheric pressure. In this process, according to the pressure feedback results of the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8, the gas supply system and the gas supply port 6 are used to supply gas to the outer cavity 100 based on PID control to control the pressure of the inner cavity 200 to approach the set target pressure;

[0055] S9, open the first door 9 and the second door 10, and take out the substrate.

[0056] Among them, in the above steps, all gases introduced into the inner cavity 200 are introduced through the gas homogenizing component 13, and the gas used for replenishing gas in the outer cavity 100 is nitrogen, and the gas in the outer cavity 100 also enters from the gas replenishing port 6.

[0057] During the process, a vacuum system is used to evacuate the outer cavity 100 and the inner cavity 200 through the main exhaust pipe 3 and the first exhaust pipe 4 and the second exhaust pipe 5 at the same time, so as to reduce the equipment manufacturing and maintenance costs while ensuring the consistency of the pressure between the inner and outer cavities. The first exhaust pipe 4 and the second exhaust pipe 5 are arranged on the same side to reduce the interference between the inner cavity 200 and the outer cavity 100 and ensure the stability of the flow field of the inner cavity 200. During the pressure adjustment process, the first vacuum pressure gauge 7 and the second vacuum pressure gauge 8 monitor the pressure of the outer cavity 100 and the inner cavity 200 respectively, so as to adjust the pressure of the inner cavity 200 by using the air supply system and the air supply port 6 to supply air to the outer cavity 100, so as to make the pressure of the inner cavity 200 approach the set target pressure. The cost is low and the accuracy is high, and low cost, high accuracy and high stability are taken into consideration.

[0058] The above-mentioned device and method are not only suitable for the preparation of aluminum oxide passivation layer of photovoltaic cells, but can also be used for the optimization and upgrading of large-scale deposition equipment of various semiconductor materials.

[0059] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned one embodiment, and all other embodiments obtained by those skilled in the art without making any creative work are within the scope of protection of the present invention.

Claims

1. An atomic layer deposition device for preparing pan-semiconductor materials, characterized in that: The invention comprises an outer chamber (1), an inner chamber (2) and a main exhaust pipe (3), wherein the outer chamber (1) and the inner chamber (2) are both rectangular parallelepipeds, the outer chamber (1) is provided with an outer cavity (100), the inner chamber (2) is provided with an inner cavity (200), the inner chamber (2) is arranged in the outer cavity (100), the inner cavity (200) is used to accommodate a substrate to be deposited, a first exhaust pipe (4) connected to the outer cavity (100) is connected to the rear side wall of the outer chamber (1), the first exhaust pipe (4) is connected to the main exhaust pipe (3), and a first exhaust pipe (4) connected to the inner cavity (200) is connected to the rear side wall of the inner chamber (2). a second exhaust pipe (5) connected to the outer chamber (1) and the inner chamber (200), the second exhaust pipe (5) passing through the outer chamber (1) and connected to the main exhaust pipe (3), the main exhaust pipe (3) being connected to a vacuum system, the outer chamber (1) being provided with an air supply port (6) connected to the outer chamber (100), the air supply port (6) being connected to the air supply system, the outer chamber (100) being provided with a first vacuum pressure gauge (7), the inner chamber (200) being provided with a second vacuum pressure gauge (8), the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8) being electrically connected to the air supply system; The inner chamber (2) is connected to an air homogenizing component (13), the air homogenizing component (13) comprising a diffusion tube (131) and a guide plate (132), the guide plate (132) being located in the inner cavity (200) and arranged close to the front end of the inner chamber (2), the guide plate (132) being connected to the upper end of the inner chamber (2), a guide cavity (14) being arranged in the guide plate (132), and the guide cavity (14) forming a third opening (15) at the front end of the guide plate (132), the upper end of the diffusion tube (131) being connected to the guide plate (132) and being connected to the main air intake pipe after passing through the upper end surface of the inner chamber (2), the lower end of the diffusion tube (131) being located in the guide cavity (14) and being provided with a plurality of air homogenizing ports (16) arranged downward.

2. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 1, characterized in that: The position ratio of the first vacuum pressure gauge (7) in the front-to-back direction of the outer cavity (100) is the same as the position ratio of the second vacuum pressure gauge (8) in the front-to-back direction of the inner cavity (200).

3. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 1, characterized in that: The outer chamber (1) is provided with a first opening at the front end, and the outer chamber (1) is connected to a first door body (9) for blocking the first opening; the inner chamber (2) is provided with a second opening at the front end, and the inner chamber (2) is connected to a second door body (10) for blocking the second opening; the first door body (9) is connected to a linkage rod (11) slidably connected to the second door body (10); the linkage rod (11) is sleeved with a spring (12) abutting between the first door body (9) and the second door body (10); when the first door body (9) blocks the first opening, the second door body (10) blocks the second opening and the spring (12) is compressed.

4. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 3, characterized in that: A first sealing ring is provided between the first door body (9) and the front end surface of the outer chamber (1), and a second sealing ring is provided between the second door body (10) and the front end surface of the inner chamber (2), and the spring (12) is compressed to press the second sealing ring.

5. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 1, characterized in that: One of the air supply ports (6) is provided on each of the left and right side walls of the outer chamber (1), and the two air supply ports (6) are arranged at opposite positions.

6. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 1, characterized in that: The portion of the first exhaust pipe (4) located outside the outer chamber (1) and the portion of the second exhaust pipe (5) located inside the outer cavity (100) and outside the outer chamber (1) are bellows (17).

7. The atomic layer deposition device for preparing pan-semiconductor materials according to claim 1, characterized in that: Each outer wall of the inner chamber (2) is connected to one or more heating plates (18), and a gap (19) of less than 10 mm is provided between each heating plate (18) and the outer wall of the inner chamber (2).

8. An atomic layer deposition method for preparing a pan-semiconductor material, characterized in that: Using the atomic layer deposition device for preparing a pan-semiconductor material according to any one of claims 1 to 7 comprises the following steps: S1, placing the substrate to be deposited at a set position in the inner cavity (200); S2, using the vacuum system to evacuate the outer cavity (100) and the inner cavity (200) to a set pressure, wherein the set pressure range is 500-800 mbar, and then using a heating plate (18) disposed on the outer wall of the inner chamber (2) to heat the inner cavity (200) to a temperature of 50-400° C.; S3, using the vacuum system to evacuate the outer cavity (100) and the inner cavity (200) to a set bottom pressure, wherein the set bottom pressure range is 0.5-2 mbar, and by monitoring the change of the vacuum value, detecting whether the inner cavity (200) and the outer cavity (100) are leaking, and if there is no leakage, proceeding to the next step; S4, introducing a purge gas into the inner cavity (200) for purging, which lasts for 30-90 seconds; S5, using the vacuum system to evacuate the outer cavity (100) and the inner cavity (200) to a set pressure, wherein the set pressure range is 1-20 mbar. During this process, according to the pressure feedback results of the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8), based on PID control, the air supply system and the air supply port (6) are used to supply air to the outer cavity (100) to control the pressure of the inner cavity (200) to approach the set target pressure. After the pressures of the inner cavity (200) and the outer cavity (100) are stabilized, the next step is entered; S6, introducing a first precursor into the inner cavity (200) for 5-20 seconds, then purging with nitrogen for 15-30 seconds, introducing a second precursor after purging for 5-20 seconds, and then purging with nitrogen again for 15-30 seconds; this process is repeated 1-100 times, and during the process, according to the pressure feedback results of the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8), the outer cavity (100) is replenished with gas based on PID control using the gas replenishment system and the gas replenishment port (6) to control the pressure of the inner cavity (200) to approach the set target pressure, and the target pressure range is 1-20 mbar; S7, using the vacuum system to evacuate the outer cavity (100) and the inner cavity (200) to a set pressure, wherein the set pressure range is 0.5-1 mbar, and nitrogen is introduced into the inner cavity (200) to a set pressure, wherein the set pressure range is 500-800 mbar; this process is repeated 2-5 times, and according to the pressure feedback results of the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8), based on PID control, the outer cavity (100) is supplied with gas by using the gas supply system and the gas supply port (6) to control the pressure of the inner cavity (200) to approach the set target pressure; S8, nitrogen is introduced into the inner cavity (200) and the outer cavity (100) simultaneously until the gas pressure reaches atmospheric pressure. During this process, according to the pressure feedback results of the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8), gas is supplied to the outer cavity (100) using the gas supply system and the gas supply port (6) based on PID control to control the pressure of the inner cavity (200) to approach the set target pressure; S9. Take out the substrate.

9. The atomic layer deposition method for preparing a pan-semiconductor material according to claim 8, characterized in that: During step S3, according to the pressure feedback results of the first vacuum pressure gauge (7) and the second vacuum pressure gauge (8), the air supply system and the air supply port (6) are used to supply air to the outer cavity (100) based on PID control to control the pressure of the inner cavity (200) to approach the set target pressure.

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