An etching chamber of a plasma etching machine and a plasma etching machine

Abstract

The present invention discloses an etching chamber of a plasma etching machine and a plasma etching machine, which relates to the technical field of semiconductor etching. It includes a workbench, on the upper side of which a support seat is fixedly connected. The support seat is provided with a first sliding member, and an etching chamber is arranged inside the first sliding member. The etching chamber is composed of a vertical cavity and a guiding cavity. The guiding cavity is frustum-shaped, and the diameter of the guiding cavity gradually decreases from top to bottom. The present invention solves the problem that the hot air generated when the silicon wafer contacts the plasma moves upward and affects the impact speed of the plasma by changing the structural characteristics of the etching chamber. Under the action of the inward depression and inclination of the inner side of the etching chamber, the hot air is blocked and the upper side of the silicon wafer is shielded, so as to reduce the amount of hot air flowing upward and avoid the impact speed of the plasma being affected after the hot air flows upward, resulting in the upper side of the silicon wafer not being evenly impacted.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching, and particularly to an etching chamber of a plasma etcher and a plasma etcher. Background Art

[0002] Etching is a micro-nano manufacturing technology that selectively removes specific parts of the surface of semiconductor materials (such as silicon wafers) through chemical or physical means to create precise microstructures or patterns on the materials. These structures form the basis of integrated circuits and other microelectronic devices. Simply put, etching is to "carve" tiny circuit patterns and device structures on silicon wafers, and a plasma etcher is a device that uses plasma to impact and etch semiconductor materials.

[0003] Taking the existing etching process of silicon wafers as an example, the steps of the existing etching process are as follows: Place the silicon wafer to be etched in the etching chamber, and inject plasma onto the silicon wafer through the gas outlet in the etching chamber, so that the parts of the silicon wafer that can be "carved" are separated from the contact with the silicon wafer, thereby completing the etching (carving) of the silicon wafer.

[0004] During the etching process of the silicon wafer, a chemical reaction occurs when the silicon wafer contacts the plasma, which causes the silicon material on the silicon wafer to be dissolved or converted into volatile compounds and scatter around. The chemical reaction process is accompanied by the release of energy, which causes the etching environment to heat up and generate hot gas. After the hot gas moves into the etching chamber, it will affect the impact speed of the plasma, resulting in the upper side of the silicon wafer not being evenly impacted, thus affecting the etching process of the silicon wafer. Summary of the Invention

[0005] The present invention aims to solve the problem that the hot gas generated when the silicon wafer contacts the plasma moves upward and affects the plasma impact speed. For this purpose, an etching chamber of a plasma etcher and a plasma etcher are provided.

[0006] The technical implementation scheme of the present invention is as follows: An etching chamber of a plasma etcher includes a workbench, a support seat is fixedly connected to the upper side of the workbench, the support seat is provided with a first sliding member, an etching chamber is arranged inside the first sliding member, the etching chamber is composed of a vertical cavity and a guiding cavity, the guiding cavity is frustum-shaped, and the diameter of the guiding cavity gradually decreases from top to bottom. The guiding cavity is used to block the hot gas etched from the silicon wafer.

[0007] Furthermore, a silicon wafer is detachably installed above the support seat, and the silicon wafer is located below the guiding cavity.

[0008] Plasma etching machine, characterized in that: the etching part of the plasma etching machine has a structure of an etching chamber of a plasma etching machine as described above. The plasma etching machine further includes an L-shaped frame, the L-shaped frame is bolted to the upper side of the workbench, the support seat is slidably connected to the first sliding member, a first electric push rod is bolted to the side of the L-shaped frame away from the workbench, and the telescopic end of the first electric push rod is bolted to the upper side of the first sliding member. A first air outlet is fixedly connected to a part of the inner side of the first sliding member close to the center of the circle, and second air outlets distributed in an annular array are fixedly connected to a part of the inner side of the first sliding member close to the outer circumference. The first air outlet and the second air outlets distributed in the annular array are both located in the etching chamber. A motor-driven rotating ring is rotatably connected to the lower part inside the first sliding member. The motor-driven rotating ring is located above the support seat. An air delivery cavity is arranged inside the motor-driven rotating ring. A suction pipe communicated with the air delivery cavity is fixedly connected to one side of the first sliding member. V-shaped frames distributed in an annular array are fixedly connected to the upper side of the motor-driven rotating ring. The upper sides of the V-shaped frames distributed in the annular array are all in contact and cooperation with the lower side of the guiding cavity. A first air guide pipe is fixedly connected to the V-shaped frame. The lower side of the first air guide pipe penetrates through the motor-driven rotating ring and the adjacent V-shaped frame and is communicated with the air delivery cavity. A V-shaped distribution guide pipe is fixedly connected to the side of the V-shaped frame facing the rotating direction of the motor-driven rotating ring. The V-shaped distribution guide pipes are all communicated with the adjacent first air guide pipes.

[0009] Further, a V-shaped plate is fixedly connected to the side of the V-shaped frame facing the rotating direction of the motor-driven rotating ring. The V-shaped plate is used for collecting the waste scraped by the adjacent V-shaped frame.

[0010] Further, heat conduction pipes distributed in an annular array are fixedly connected to the first sliding member. Water is placed inside the heat conduction pipes. The lower sides of the heat conduction pipes distributed in the annular array are all located inside the guiding cavity.

[0011] Further, heat conduction members that are annular and distributed in a linear array are fixedly connected to the upper sides of the heat conduction pipes. The side of the heat conduction member away from the adjacent heat conduction pipe is arranged in a corrugated shape to increase the contact area between the heat conduction member and the outside.

[0012] Further, the plasma etching machine further includes a fixing component, which is arranged inside the support base. The fixing component is used to fix the silicon wafer. The fixing component includes a second sliding member, which is slidably connected to the inside of the support base. A spring is arranged between the second sliding member and the support base. A connecting frame is fixedly connected to the upper side of the second sliding member. A first sealing member is fixedly connected to a side of the connecting frame near its outer periphery. A groove for extrusion cooperation with the first sealing member is arranged on the upper side of the support base. A second electric push rod is arranged at the lower part inside the support base. The telescopic end of the second electric push rod is fixedly connected to a piston rod, and the piston rod is slidably matched with the lower part inside the support base. A second sealing member for extrusion cooperation with the silicon wafer is fixedly connected to the upper side of the connecting frame. A cooling component for cooling the silicon wafer is arranged inside the support base.

[0013] Further, the transverse length of the cross-section of the groove is greater than the transverse length of the cross-section of the first sealing member, which is used to provide a space for the first sealing member to diffuse around. The fixing position of the connecting frame and the first sealing member is located above the middle of the first sealing member, which is used to enhance the fitting degree between the first sealing member and the groove.

[0014] Further, the cooling component includes a fixing disk, which is fixedly connected to the middle of the inside of the support base. A first cavity is arranged at the lower side inside the fixing disk. A rotating shell is rotatably connected to a side of the fixing disk near its center. A second cavity communicating with the first cavity at the lower side inside the fixing disk is arranged at the upper side inside the rotating shell. The rotating shell is fixedly connected with second air ducts distributed in an annular array. The upper sides of the second air ducts are fixedly connected and communicated with third air outlets distributed in a linear array. Air outlet holes are arranged on the opposite sides of the upper parts of the second air ducts distributed in an annular array. A U-shaped pipe is fixedly connected and communicated with the outside of the fixing disk. Z-shaped pipes distributed in an annular array are fixedly connected to the upper side of the support base. The fixing disk is provided with a driving component for driving the rotating shell to rotate.

[0015] Further, the driving component includes a fixing shell, which is fixedly connected to the lower side of the fixing disk. One side of the fixing shell is fixedly connected and communicated with the U-shaped pipe. A rotating fan blade is rotatably connected inside the fixing shell. The side of the rotating fan blade near its center is fixedly connected to the outer side of the rotating shell. An air inlet pipe penetrating through the support base is fixedly connected and communicated with the side of the fixing shell away from the U-shaped pipe.

[0016] Compared with the prior art, the present invention has the following advantages: By changing the structural characteristics of the etching chamber, the present invention solves the problem that the hot gas generated when the silicon wafer contacts the plasma will affect the plasma impact speed after moving upward. Under the action of the inwardly concave and inclined inner side of the etching chamber, the hot gas is blocked and the upper side of the silicon wafer is shielded, so as to reduce the amount of hot gas flowing upward and avoid the hot gas flowing upward from affecting the plasma impact speed, resulting in the upper side of the silicon wafer not being evenly impacted;

[0017] During the etching process of the silicon wafer, through the rotation of the electric rotating ring and its upper parts, the inwardly concave and inclined part of the inner side of the etching chamber is scraped, so that the waste falls into the adjacent V-shaped plate and is extracted by the adjacent first air duct, completing the cleaning of the waste and the timely extraction of the hot gas, avoiding the upward flow of the hot gas and affecting the plasma impact process;

[0018] During the etching process of the silicon wafer, the liquid heat transfer method is adopted to focus on cooling the inwardly concave and inclined part of the inner side of the etching chamber;

[0019] Before the silicon wafer is etched, through the cooperation of the piston rod and the second sliding part, the silicon wafer is extracted under negative pressure, so that the silicon wafer remains stable during the etching process, avoiding the position of the silicon wafer from shifting after being impacted by the plasma during the etching of the silicon wafer, resulting in the silicon wafer not being evenly etched by the plasma;

[0020] During the etching process of the silicon wafer, the rotation cooling method is adopted to cool the bottom of the silicon wafer, so that the silicon wafer remains stable during the etching process. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 Is the front view of the three-dimensional structure of the present invention;

[0022] Figure 2 Is the rear view of the three-dimensional structure of the present invention;

[0023] Figure 3 Is the cross-sectional view of the three-dimensional structure of the first sliding part of the present invention;

[0024] Figure 4 Is the schematic diagram of the three-dimensional structure of the etching chamber of the present invention;

[0025] Figure 5 Is the cross-sectional view of the three-dimensional structure of the electric rotating ring of the present invention;

[0026] Figure 6 Is the bottom view of the three-dimensional structure of the heat conduction tube of the present invention;

[0027] Figure 7 Is the schematic diagram of the three-dimensional structure of the fixing component of the present invention;

[0028] Figure 8 is a cross-sectional view of the three-dimensional structure of the support base of the present invention;

[0029] Figure 9 is a schematic diagram of the three-dimensional structure of the cooling component of the present invention;

[0030] Figure 10 is a cross-sectional view of the three-dimensional structure of the driving component of the present invention.

[0031] The markings of each component in the drawings are as follows: 1: silicon wafer, 10: workbench, 11: support base, 12: first sliding member, 13: etching chamber, 1301: guiding chamber, 20: L-shaped frame, 21: first electric push rod, 22: first air outlet, 23: second air outlet, 24: electric rotating ring, 25: air delivery chamber, 26: V-shaped frame, 27: first air duct, 28: V-shaped plate, 30: heat conducting tube, 40: heat conducting member, 5: fixing component, 50: second sliding member, 51: connecting frame, 52: first sealing member, 53: groove, 54: second electric push rod, 55: piston rod, 56: second sealing member, 6: cooling component, 60: fixing disk, 61: rotating shell, 62: second air duct, 63: third air outlet, 64: U-shaped tube, 65: Z-shaped tube, 7: driving component, 70: fixing shell, 71: rotating fan blade. Detailed implementation manners

[0032] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0033] Embodiment 1: The problem solved in this embodiment is how to avoid the influence of hot air on the plasma. Now, the above-mentioned problem is solved through the following specific implementation manners;

[0034] A plasma etching machine etching chamber, as Figures 1-4As shown in the figure, it includes a workbench 10. A support base 11 is fixedly connected to the upper side of the workbench 10. The support base 11 is provided with a first sliding member 12. An etching chamber 13 is arranged inside the first sliding member 12. A silicon wafer 1 is detachably installed above the support base 11. The etching chamber 13 is composed of a vertical cavity and a guiding chamber 1301. The guiding chamber 1301 is frustum-shaped, and the diameter of the guiding chamber 1301 gradually decreases from top to bottom. The silicon wafer 1 is located below the guiding chamber 1301. The guiding chamber 1301 is used to block the hot gas etched from the silicon wafer 1 (for the specific explanation of the hot gas, please refer to the working principle of this embodiment), so as to reduce the amount of hot gas flowing upward, and avoid the impact speed of the plasma being affected after the hot gas flows upward, resulting in the upper side of the silicon wafer not being evenly impacted.

[0035] During the etching process of the silicon wafer 1 (etching is to "carve" tiny circuit patterns and device structures on the silicon wafer 1. If it is "carving" wood, the part "carved" on the wood is the required part in the silicon wafer 1, and the waste "carved" out is the waste part etched from the silicon wafer 1), when the silicon wafer 1 contacts the plasma, a chemical reaction will occur between the two, which will cause the silicon material on the silicon wafer 1 to be converted into a volatile compound and scatter around. The chemical reaction process is accompanied by the release of energy, manifested as heat energy, thus causing the etching environment to heat up and generate hot gas. In order to prevent the silicon material on the silicon wafer 1 from being dissolved or the volatile compound converted from it from scattering around and adhering to the inner wall of the etching chamber 13 when the silicon wafer 1 contacts the plasma, affecting the distribution of the plasma in the etching chamber 13 and even affecting the etching process of the silicon wafer 1, the present invention solves the above-mentioned problems by changing the structural characteristics of the etching chamber 13, specifically as follows:

[0036] When the silicon wafer 1 needs to be etched, the user first connects the intake parts of the external intake device and the external vacuum device to the upper side of the first sliding member 12 and communicates with the etching chamber 13, and then the user installs the support base 11 and the first sliding member 12 to be Figure 3After reaching the state in , the silicon wafer 1 is located above the support base 11. The etching chamber 13 is evacuated to a vacuum state by an external vacuum device, and then plasma is supplied into the etching chamber 13 by an external gas inlet device. The plasma entering the etching chamber 13 immediately bombards the upper side of the silicon wafer 1 to perform the etching operation on the silicon wafer 1. The bombarded part on the upper side of the silicon wafer 1 scatters around. Under the action of the frustum-shaped guiding chamber 1301, the waste material bombarded on the upper side of the silicon wafer 1 and scattered around is blocked, reducing the amount of the waste material bombarded on the upper side of the silicon wafer 1 scattered upward, so as not to affect the etching process of the silicon wafer 1. As the etching time increases, a large amount of hot gas is generated in the bombarded part on the upper side of the silicon wafer 1. Under the action of the frustum-shaped guiding chamber 1301, the hot gas is blocked and the upper side of the silicon wafer 1 is shielded, thereby reducing the amount of hot gas flowing upward and preventing the hot gas from affecting the impact speed of the plasma after flowing upward, resulting in the upper side of the silicon wafer 1 not being evenly impacted.

[0037] When the etching of the silicon wafer 1 is completed, the user disconnects the connection between the external gas inlet device, the external vacuum device and the etching chamber 13, then moves the first sliding member 12 upward until it does not contact the support base 11, and finally the user takes out the etched silicon wafer 1, thus completing the etching of the silicon wafer 1.

[0038] Embodiment 2: The problem actually solved in this embodiment is how to process the waste material generated by the plasma bombarding the silicon wafer 1 and in what way to cool down the inside of the etching chamber 13. The above-mentioned problems are now solved through the following specific implementation manners:

[0039] On the basis of Embodiment 1, a plasma etching machine, as Figures 1-6 shown. In the etching part of the plasma etching machine, the structure is the same as that of the etching chamber of a plasma etching machine described above. The plasma etching machine further includes an L-shaped frame 20. The L-shaped frame 20 is bolted to the upper side of the workbench 10. The support base 11 is slidably connected to the first sliding member 12. A first electric push rod 21 electrically connected to the remote control terminal is bolted to the upper side of the L-shaped frame 20. The telescopic end of the first electric push rod 21 is bolted to the upper side of the first sliding member 12. When the telescopic end of the first electric push rod 21 slides up and down, the first sliding member 12 slides up and down along with the telescopic end of the first electric push rod 21. A first air outlet 22 is fixedly connected to a part near the center of the inner side of the first sliding member 12, and a second air outlet 23 distributed in an annular array is fixedly connected to a part near the outer periphery of the inner side of the first sliding member 12. Both the first air outlet 22 and the second air outlets 23 distributed in an annular array are located inside the etching chamber 13. The lower side of the first sliding member 12 and the upper side of the support base 11 are Figure 3When in the state, both the first air outlet 22 and the second air outlets 23 distributed in an annular array face the silicon wafer 1. A motorized rotating ring 24 is rotatably connected to the lower part inside the first sliding member 12. The motorized rotating ring 24 is composed of a rotating ring and motorized wheels distributed in an annular array. The motorized rotating ring 24 is located above the support base 11. An air delivery cavity 25 is arranged inside the motorized rotating ring 24. A suction pipe communicating with the air delivery cavity 25 is fixedly connected to the right side of the first sliding member 12. A V-shaped frame 26 distributed in an annular array is fixedly connected to the upper side of the motorized rotating ring 24. The upper sides of the V-shaped frames 26 distributed in an annular array are all in contact and cooperation with the lower side of the guiding cavity 1301. A V-shaped plate 28 is fixedly connected to the side of the V-shaped frame 26 facing the rotating direction of the motorized rotating ring 24. When the motorized rotating ring 24 drives the V-shaped frames 26 distributed in an annular array to rotate, the V-shaped frames 26 scrape the lower side of the guiding cavity 1301 (when the plasma bombards the upper side of the silicon wafer 1, the bombarded part on the upper side of the silicon wafer 1 scatters around), so that the waste material is separated from the contact with the lower side of the guiding cavity 1301, so as to realize the focused cleaning of the lower side of the guiding cavity 1301. Under the action of the V-shaped plate 28 blocking the waste material, the waste material is collected. A first air guide pipe 27 is fixedly connected to the inner side of the V-shaped frame 26. The lower side of the first air guide pipe 27 penetrates through the motorized rotating ring 24 and the adjacent V-shaped frame 26 and communicates with the air delivery cavity 25. A V-shaped distributed material guide pipe is fixedly connected to the side of the V-shaped frame 26 facing the rotating direction of the motorized rotating ring 24. The V-shaped distributed material guide pipes are all communicated with the adjacent first air guide pipes 27.

[0040] As Figure 3 、 Figure 4 and Figure 6 shown, a heat conducting pipe 30 distributed in an annular array is fixedly connected to the outer periphery of the first sliding member 12. Water is placed inside the heat conducting pipe 30. The lower sides of the heat conducting pipes 30 distributed in an annular array are all located inside the guiding cavity 1301. After the heat conducting pipe 30 senses the heat of the guiding cavity 1301, the water inside the heat conducting pipe 30 is heated by the surrounding hot air. After the temperature of the hot air is higher than the boiling point of the water, the water is converted from a liquid state to a gaseous state. The water in the gaseous state then moves upward to the adjacent heat conducting pipe 30. Under the action of the external environment outside the adjacent heat conducting pipe 30, the temperature outside the heat conducting pipe 30 is lower than the temperature of the part of the heat conducting pipe 30 located inside the etching cavity 13. The water in the gaseous state is reconverted into a liquid state when it comes into contact with the upper heat conducting pipe 30. The liquid converted from the heatable liquid flows downward to the lower side of the adjacent heat conducting pipe 30 and repeats the above operation, so as to realize the cooling of the lower side of the guiding cavity 1301, and under the description of the above positional relationship, the lower side of the guiding cavity 1301 is focused on cooling. A heat conducting member 40 distributed in an annular and linear array is fixedly connected to the upper side of the heat conducting pipe 30. The side of the heat conducting member 40 away from the adjacent heat conducting pipe 30 is arranged in a corrugated shape to increase the contact area between the heat conducting member 40 and the outside.

[0041] Since waste materials are generated during the etching process of the silicon wafer 1, the long-term accumulation of waste materials will affect the etching of the silicon wafer 1 (for example, during the etching process of the silicon wafer 1, if the waste materials adhered to the inner side of the etching chamber 13 fall onto the upper side of the silicon wafer 1, it will affect the etching progress of the silicon wafer 1 and even damage the original pattern on the silicon wafer 1). To solve the above problems, the present invention uses a rotational cleaning method to clean the waste materials adhered to the inner wall of the etching chamber 13, and the cleaning of the inner wall of the etching chamber 13 can be completed during the etching process of the silicon wafer 1. The specific steps are as follows: When the silicon wafer 1 needs to be etched, the user places the silicon wafer 1 on the upper side of the support base 11, then connects the external cooling device to the support base 11, and then the user manipulates the telescopic end of the first electric push rod 21 to push the first sliding member 12 downward through the remote control terminal. After the first sliding member 12 moves downward to the state in Figure 3 , the user no longer manipulates the first electric push rod 21 to move. Finally, the user manipulates the external air inlet device to transport the plasma to the first air outlet 22 and all the second air outlets 23. Under the action of the first air outlet 22 and all the second air outlets 23 facing the silicon wafer 1, the plasma is transported to the upper side of the silicon wafer 1, causing a chemical reaction between the silicon wafer 1 and the plasma. During the process of the silicon wafer 1 being eroded by the plasma, the external cooling device provides daily cooling to the lower side of the silicon wafer 1. Since heat is released when the silicon wafer 1 comes into contact with the plasma during the etching process of the silicon wafer 1, part of the heat scatters around, and the other part of the heat remains in the silicon wafer 1. Therefore, it is necessary to cool the silicon wafer 1.

[0042] During the etching process of the silicon wafer 1, the user connects the air extraction part of the external air extractor to the air extraction pipe on the right side of the air delivery cavity 25, and then the user starts the electric rotating ring 24 through the remote control terminal. The electric rotating ring 24 drives all the V-shaped frames 26, the first air guide pipes 27 and the V-shaped plates 28 to rotate counterclockwise. Under the action of the air extraction pipe on the right side of the air delivery cavity 25 extracting gas, the gas in the air delivery cavity 25 is discharged outward through the air extraction pipe on its right side. During the rotation of the first air guide pipe 27 following the electric rotating ring 24, the nearby hot air is timely extracted (since the V-shaped frame 26 contacts the lower side of the guiding cavity 1301, when the V-shaped frame 26 and the first air guide pipe 27 rotate following the electric rotating ring 24, the hot air on the lower side of the guiding cavity 1301 can be timely extracted), preventing the hot air from flowing upward and affecting the impact process of the plasma.

[0043] During the process of extracting the hot air in the etching chamber 13, the waste on the V-shaped frame 26 is scraped during the rotation of the V-shaped frame 26 along the lower side of the guiding chamber 1301, so that the waste adhered to the lower side of the guiding chamber 1301 falls into the adjacent V-shaped plate 28. In cooperation with the air extraction of the first air duct 27, the waste and the hot air enter the adjacent first air duct 27 through the adjacent and V-shaped distributed material guiding pipes, and are discharged through the first air duct 27, the air transmission chamber 25 and the adjacent air extraction pipes thereon, so as to realize the cleaning of the waste.

[0044] During the process of etching the silicon wafer 1, the hot air around the guiding chamber 1301 heats the adjacent heat conducting pipe 30. When the temperature of the hot air is higher than the boiling point of water, the water in the heat conducting pipe 30 moves upward in a vaporized state. Under the action of the connection between the heat conducting member 40 and the adjacent heat conducting pipe 30, the external temperature is guided to the upper side of the adjacent heat conducting pipe 30, so that the temperature on the upper side of the heat conducting pipe 30 is lower than the temperature in the etching chamber 13. Under the action of the corrugated shape on the side of the heat conducting member 40 away from the adjacent heat conducting pipe 30, the contact area between the heat conducting member 40 and the external environment is increased, so as to enhance the cooling efficiency of the adjacent heat conducting pipe 30. When the vaporized water contacts the upper side of the adjacent heat conducting pipe 30, it is cooled by the upper side of the heat conducting pipe 30, so that the vaporized water is converted to the liquid state and flows downward again. When the liquid water is heated again, the liquid water moves upward to the upper side of the adjacent heat conducting pipe 30 in a vaporized state again and repeats the above operation steps. Through the above operation, the key cooling of the guiding chamber 1301 is realized.

[0045] When it is no longer necessary to etch the silicon wafer 1, the user closes the electric rotating ring 24 through the remote control terminal, disconnects the connection between the external exhaust fan and the air extraction pipe on the right side of the air transmission chamber 25, and disconnects the connection between the external air intake device and the first air outlet 22 and all the second air outlets 23. Then, the user controls the telescopic end of the first electric push rod 21 through the remote control terminal to drive the first sliding member 12 to slide upward until it does not contact the upper side of the support seat 11. Finally, the user can take out the silicon wafer 1.

[0046] Embodiment 3: The problems actually solved in this embodiment are how to fix the silicon wafer 1 and what method to use to cool the silicon wafer 1. Now, the above-mentioned problems are solved through the following specific implementation manners;

[0047] On the basis of Embodiment 2, as Figure 3 and Figures 7-9As shown, the plasma etching machine further includes a fixing component 5 disposed inside the support base 11. The fixing component 5 is used for negatively fixing the silicon wafer 1. The fixing component 5 includes a second sliding member 50. The second sliding member 50 is limit slidably connected to the inside of the support base 11. The second sliding member 50 is made of metal. A spring is provided between the second sliding member 50 and the support base 11. This spring is used to reset the second sliding member 50. A connecting frame 51 is fixedly connected to the upper side of the second sliding member 50. A first sealing member 52 is fixedly connected to a side of the connecting frame 51 near its outer periphery. The first sealing member 52 is made of soft silicone material. A groove 53 is provided on the upper side of the support base 11. The groove 53 is in extrusion fit with the first sealing member 52. The horizontal length of the cross-section of the groove 53 is greater than the horizontal length of the cross-section of the first sealing member 52, which is used to provide a space for the first sealing member 52 to spread around. The fixing position of the connecting frame 51 and the first sealing member 52 is located above the middle of the first sealing member 52, which is used to enhance the fit degree between the first sealing member 52 and the groove 53. When the lower side of the first sealing member 52 is flush with the lower side of the groove 53, continue to apply pressure to deform the first sealing member 52 by extrusion so that it completely fits the groove 53. A second electric push rod 54 electrically connected to the remote control terminal is provided at the lower part inside the support base 11. The telescopic end of the second electric push rod 54 is fixedly connected to a piston rod 55 that is in sealed sliding fit with the lower part inside the support base 11. A second sealing member 56 is fixedly connected to the upper side of the connecting frame 51. The second sealing member 56 is made of soft silicone material. The second sealing member 56 is in extrusion fit with the silicon wafer 1. After the silicon wafer 1 fits with the upper side of the second sliding member 50, the piston rod 55 slides downward to gradually form a negative pressure environment inside the second sliding member 50. Through the negative pressure environment formed above, the silicon wafer 1 is negatively fixed, so that the silicon wafer 1 remains stable during the etching process. A cooling component 6 for cooling the silicon wafer 1 is provided inside the support base 11.

[0048] As Figure 3 and Figures 7-10As shown in the figure, the cooling component 6 includes a fixed disk 60 fixedly connected to the middle inside of the support base 11. A first cavity is arranged on the lower side inside the fixed disk 60. The inner side of the fixed disk 60 is hermetically and rotationally connected with a rotating shell 61. A second cavity is arranged on the upper side inside the rotating shell 61. The second cavity inside the rotating shell 61 communicates with the first cavity on the lower side inside the fixed disk 60. The rotating shell 61 is fixedly connected with second air ducts 62 distributed in an annular array. Among them, the lower side of the second air duct 62 is fixedly connected to the upper side of the rotating shell 61, and the upper side of the second air duct 62 is fixedly connected to the upper side of the rotating shell 61 through a connecting frame. The second air duct 62 is in a spiral upward state. The upper side of the second air duct 62 is fixedly connected and communicated with third air outlets 63 distributed in a linear array. The gas ejected through the third air outlets 63 cools the lower side of the silicon wafer 1, providing stability for the silicon wafer 1 during the etching process. Air outlets are arranged on the opposite sides of the upper part of the second air ducts 62 distributed in an annular array. The air outlets on the opposite sides of the second air ducts 62 distributed in an annular array all face the outer wall of the sliding member 50. The outside of the fixed disk 60 is fixedly connected and communicated with a U-shaped pipe 64. The upper side of the support base 11 is fixedly connected with Z-shaped pipes 65 distributed in an annular array. The Z-shaped pipes 65 are used to guide the excess gas inside the support base 11 outwards. The fixed disk 60 is provided with a driving component 7 for driving the rotating shell 61 to rotate.

[0049] As Figure 9 and Figure 10 shown in the figure, the driving component 7 includes a fixed shell 70 fixedly connected to the lower side of the fixed disk 60. The left part at the rear side of the fixed shell 70 is fixedly connected and communicated with the lower side of the U-shaped pipe 64. A rotating fan blade 71 is limited and hermetically rotationally connected inside the fixed shell 70. The inner side of the rotating fan blade 71 is fixedly connected to the outer side of the rotating shell 61. The right side of the fixed shell 70 is fixedly connected with an air inlet pipe penetrating through the support base 11.

[0050] To ensure that the silicon wafer 1 will not be affected by the plasma and shift during the etching process (if the silicon wafer 1 shifts when the plasma impacts the silicon wafer 1, the silicon wafer 1 cannot be in uniform contact with the plasma, which will cause errors in the etching degree on the upper side of the silicon wafer 1), the present invention will achieve the above-mentioned effects through the following explanation.

[0051] Before etching the silicon wafer 1, the user or the placement device places the silicon wafer 1 on the upper side of the second seal 56. After the silicon wafer 1 is attached to the upper side of the second seal 56, it is pressed downward to enhance the sealing degree between the silicon wafer 1 and the upper side of the second slider 50. At this time, the outer periphery of the silicon wafer 1 is already attached to the upper side of the first seal 52. Then, the user manipulates the second electric push rod 54 through the remote control terminal to pull the piston rod 55 at its telescopic end downward. During the downward movement of the piston rod 55, a negative pressure gradually forms inside the second slider 50. When the negative pressure inside the second slider 50 is greater than the supporting force of the adjacent spring below it, the second slider 50 moves downward under the pulling force generated by the upward pull of the piston rod 55. After the second slider 50, the connecting frame 51, the first seal 52, and the silicon wafer 1 move downward until the first seal 52 fits with the groove 53, and then the second slider 50 and its upper parts continue to slide downward. Under the action of the pulling force provided by the second slider 50, the first seal 52 deforms and fits with the groove 53, thereby enhancing the sealing between the two.

[0052] When the second slider 50 and its upper parts slide until the first seal 52 completely fits with the groove 53, the user no longer manipulates the second electric push rod 54 to move. By extracting the negative pressure of the silicon wafer 1 through the second slider 50, the silicon wafer 1 is fixed, so that the silicon wafer 1 remains stable during the subsequent etching process. And through the fit between the first seal 52 and the groove 53, when the support base 11 admits gas later, the gas will not leak into the etching chamber 13.

[0053] After the fixation of the silicon wafer 1 is completed, the above etching operation of the silicon wafer 1 can be repeated.

[0054] During the etching process of the silicon wafer 1, the user connects the air supply port of the external cooling air supply device to the air inlet pipe on the fixed housing 70, and the gas is transported into the fixed housing 70 through the external cooling air supply device. The gas entering the fixed housing 70 impacts the rotating fan blade 71 and drives it to rotate. During the rotation of the rotating fan blade 71, all the second air guide pipes 62 are driven to rotate through the rotating housing 61. Under the action of the rotation of the rotating fan blade 71, the gas in the fixed housing 70 is transported into the U-shaped pipe 64, and the gas is transported from the upper side of the U-shaped pipe 64 into the first cavity in the fixed disk 60. The gas is transported from the first cavity in the fixed disk 60 into the second cavity of the rotating housing 61, and then the gas is transported from the second cavity of the rotating housing 61 into all the second air guide pipes 62. The gas moves upward in the second air guide pipes 62 and is ejected from all the third air outlet holes 63 and air outlet holes on them. The gas ejected from all the third air outlet holes 63 on the upper side of the second air guide pipes 62 cools the lower side of the silicon wafer 1, so that the temperature of the silicon wafer 1 remains stable during the etching process, and through the contact between the rotating fan blade 71 and the gas, all the second air guide pipes 62 are driven to perform rotary jetting, so as to achieve uniform cooling of the lower side of the silicon wafer 1.

[0055] The gas on the upper side inside the support base 11 then flows out from all the Z-shaped pipes 65. When the etching of the silicon wafer 1 is completed, the user disconnects the connection between the air supply port of the external cooling air supply device and the air inlet pipe on the fixed housing 70, and then repeats the above action of the first sliding member 12 moving upward until the first sliding member 12 moves to a position where it does not contact the support base 11. When it is necessary to take out the silicon wafer 1, the user controls the telescopic end of the second electric push rod 54 to push the piston rod 55 upward, so that the normal pressure environment is gradually restored inside the second sliding member 50. The second sliding member 50 gradually moves upward under the action of the spring, and the first seal 52 gradually disengages from the contact with the groove 53 during the upward movement of the second sliding member 50. When the second sliding member 50 carries the silicon wafer 1 and its upper parts to move to the Figure 7 state in the figure, the user can take out the silicon wafer 1. For the subsequent etching process of the silicon wafer 1, the above steps can be repeated.

[0056] It should be understood that the above description is only for exemplary purposes and does not mean to limit the present invention. Those skilled in the art will understand that the variant forms of the present invention will be included within the scope of the claims herein.

Claims

1. A plasma etcher, characterized in that: The invention comprises a plasma etching chamber, wherein the plasma etching chamber comprises a workbench (10), wherein a support seat (11) is fixedly connected to the upper side of the workbench (10), wherein the support seat (11) is provided with a first sliding member (12), wherein an etching chamber (13) is provided inside the first sliding member (12), wherein the etching chamber (13) is composed of a vertical chamber body and a guide chamber (1301), wherein the guide chamber (1301) is truncated cone-shaped, and wherein the diameter of the guide chamber (1301) gradually decreases from top to bottom; A silicon wafer (1) is detachably mounted above the support seat (11), the silicon wafer (1) being located below the guide cavity (1301), the guide cavity (1301) being used to shield hot air generated by etching the silicon wafer (1); The plasma etching machine further comprises an L-shaped frame (20), wherein the L-shaped frame (20) is bolted to the upper side of the workbench (10), the support seat (11) is slidably connected to the first sliding member (12), a side of the L-shaped frame (20) away from the workbench (10) is bolted to the first electric push rod (21), the telescopic end of the first electric push rod (21) is bolted to the upper side of the first sliding member (12), a first air outlet (22) is fixedly connected to the inner side of the first sliding member (12) near the center of the circle, and a second air outlet (23) distributed in a ring array is fixedly connected to the inner side of the first sliding member (12) near the periphery, the first air outlet (22) and the second air outlet (23) distributed in a ring array are both located in the etching chamber (13), and the lower part of the first sliding member (12) is rotatably connected to an electric rotating ring (24). The electric rotating ring (24) is located above the support seat (11), and an air delivery cavity (25) is arranged in the electric rotating ring (24). An air extraction pipe communicating with the air delivery cavity (25) is fixedly connected to one side of the first sliding member (12). V-shaped frames (26) distributed in an annular array are fixedly connected to the upper side of the electric rotating ring (24). The upper sides of the V-shaped frames (26) distributed in an annular array are in contact with the lower side of the guide cavity (1301). The V-shaped frames (26) are fixedly connected to a first air guide pipe (27). The lower side of the first air guide pipe (27) passes through the electric rotating ring (24) and the adjacent V-shaped frames (26) and is communicated with the air delivery cavity (25). A V-shaped material guide pipe is fixedly connected to the side of the V-shaped frame (26) facing the rotation direction of the electric rotating ring (24). The V-shaped material guide pipes are all communicated with the adjacent first air guide pipes (27). A V-shaped plate (28) is fixedly connected to one side of the V-shaped frame (26) facing the rotation direction of the electric rotating ring (24), and the V-shaped plate (28) is used to collect waste scraped by the adjacent V-shaped frame (26).

2. The plasma etcher according to claim 1, characterized in that: The first sliding member (12) is fixedly connected with heat-conducting pipes (30) distributed in a ring array, water is placed in the heat-conducting pipes (30), and the lower sides of the heat-conducting pipes (30) distributed in the ring array are all located inside the guide cavity (1301).

3. The plasma etcher according to claim 2, characterized in that: The upper side of the heat conducting pipe (30) is fixedly connected with a heat conducting member (40) which is annular and distributed in a linear array, and the side of the heat conducting member (40) away from the adjacent heat conducting pipe (30) is arranged in a corrugated shape, so as to increase the contact area between the heat conducting member (40) and the outside.

4. The plasma etcher according to claim 1, characterized in that: The plasma etching machine further comprises a fixing assembly (5), wherein the fixing assembly (5) is arranged on the inner side of the support seat (11), and the fixing assembly (5) is used to fix the silicon wafer (1), and the fixing assembly (5) comprises a second sliding member (50), wherein the second sliding member (50) is slidably connected to the inner side of the support seat (11), a spring is arranged between the second sliding member (50) and the support seat (11), a connecting frame (51) is fixedly connected to the upper side of the second sliding member (50), and a first sealing member (52) is fixedly connected to a side of the connecting frame (51) close to its outer periphery. ), a groove (53) for pressing and fitting with the first sealing member (52) is provided on the upper side of the support seat (11), a second electric push rod (54) is provided on the lower part of the inner side of the support seat (11), a piston rod (55) is fixedly connected to the telescopic end of the second electric push rod (54), the piston rod (55) is slidably fitted with the lower part of the inner side of the support seat (11), a second sealing member (56) for pressing and fitting with the silicon wafer (1) is fixedly connected to the upper side of the connecting frame (51), and a cooling component (6) for cooling the silicon wafer (1) is provided on the inner side of the support seat (11).

5. The plasma etcher according to claim 4, characterized in that: The transverse length of the cross section of the groove (53) is greater than the transverse length of the cross section of the first sealing member (52), so as to provide space for the first sealing member (52) to spread out in all directions. The fixing position of the connecting frame (51) and the first sealing member (52) is located on the upper side of the middle of the first sealing member (52), so as to enhance the fit between the first sealing member (52) and the groove (53).

6. The plasma etcher according to claim 5, characterized in that: The cooling component (6) comprises a fixed disk (60), the fixed disk (60) being fixedly connected to the middle portion of the inner side of the support seat (11), a first cavity being arranged on the lower side of the fixed disk (60), a rotating shell (61) being rotatably connected to a side of the fixed disk (60) close to the center of a circle thereof, a second cavity being arranged on the upper side of the rotating shell (61) being in communication with the first cavity on the lower side of the fixed disk (60), and a second air guide tube (61) being arranged on the rotating shell (61) in a circular array. 62), the upper side of the second air guide tube (62) is fixedly connected to and communicated with third air outlets (63) distributed in a linear array, air outlet holes are arranged on opposite sides of the upper part of the second air guide tube (62) distributed in a circular array, the outer side of the fixed disk (60) is fixedly connected to and communicated with a U-shaped tube (64), the upper side of the support seat (11) is fixedly connected to Z-shaped tubes (65) distributed in a circular array, and the fixed disk (60) is provided with a driving component (7) for driving the rotating shell (61) to rotate.

7. The plasma etcher according to claim 6, characterized in that: The driving assembly (7) comprises a fixed shell (70), the fixed shell (70) being fixedly connected to the lower side of the fixed disk (60), one side of the fixed shell (70) being fixedly connected to and communicated with the U-shaped tube (64), a rotating blade (71) being rotatably connected inside the fixed shell (70), a side of the rotating blade (71) close to the center of a circle being fixedly connected to the outer side of the rotating shell (61), and a side of the fixed shell (70) away from the U-shaped tube (64) being fixedly connected to and communicated with an air intake pipe that passes through the support seat (11).

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