Method, device, equipment, medium and program product for detecting abnormality of connection components

Abstract

The present application discloses an abnormality detection method, device, equipment, medium and program product of a connecting component, wherein the connecting component includes a first conductor and a second conductor, wherein the first surface of the first conductor contacts the second surface of the second conductor, and the first conductor, the second conductor and an AC source are connected in series to form a test loop; the abnormality detection method includes: when the frequency output by the AC source changes from the first frequency to the second frequency, determining a first voltage and a first current obtained at multiple frequencies between the first frequency and the second frequency; determining a resistance calculation value corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies; determining a target frequency corresponding to a sudden change in the resistance calculation value according to the resistance calculation value corresponding to each of the multiple frequencies; determining a film thickness between the first surface and the second surface according to the target frequency; and determining whether the connecting component has a connection abnormality according to the film thickness. Thus, the abnormality detection accuracy of the connecting component is improved.

Description

Technical Field

[0001] The present application relates to the field of electrical measurement technology, and in particular to a method, device, equipment, medium and program product for detecting abnormality of a connection component. Background Art

[0002] In the production process of battery products, in order to ensure that the battery can meet the use requirements after leaving the factory, it is also necessary to control the connection reliability of the connecting parts. Among them, since the contact surface of the connecting parts cannot fit perfectly, there must be a film layer formed by contaminants on it.

[0003] For the film layer on the contact surface, it is generally oxide, sulfide, impurity attachment, etc. The temperature rise of this film layer under high current conditions accounts for a large proportion, and the abnormality of the film layer is prone to cause power loss, excessive temperature rise and other problems, resulting in loss of life of the connection components and reducing product reliability. Summary of the invention

[0004] The present application proposes a method, device, equipment, medium and program product for detecting abnormalities in connecting components, which can determine whether there is a connection abnormality in the connecting component by detecting the thickness of the film layer, thereby improving the accuracy of detecting abnormalities in the connecting component and further improving product reliability.

[0005] The technical solution of this application is implemented as follows:

[0006] In a first aspect, an embodiment of the present application provides a method for detecting an abnormality of a connection component, wherein the connection component includes a first conductor and a second conductor, wherein a first surface of the first conductor contacts a second surface of the second conductor, and the first conductor, the second conductor, and an AC source are connected in series to form a test loop; the method for detecting an abnormality includes:

[0007] When the frequency output by the AC source changes from a first frequency to a second frequency, determining a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency; wherein the first current is output by the AC source, and the first voltage refers to a voltage drop between the first surface and the second surface;

[0008] Determine resistance calculation values ​​corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies;

[0009] Determine, according to the resistance calculation values ​​corresponding to the multiple frequencies, a target frequency corresponding to when the resistance calculation value suddenly changes;

[0010] Determine the thickness of the film layer between the first surface and the second surface according to the target frequency, wherein the thickness of the film layer is equal to the target skin depth corresponding to the target frequency;

[0011] Determine whether there is any abnormal connection between the connecting parts based on the film thickness.

[0012] Through the above-mentioned technical means, by utilizing the frequency change of the AC source, after determining the target frequency corresponding to the sudden change in the calculated resistance value, the film thickness can be determined according to the target frequency, and then the film thickness can be used to determine whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component; and when a connection abnormality is detected in the connecting component, the connection component can be stopped from being used, thereby reducing problems such as abnormal temperature rise and power loss caused by the connection abnormality, thereby improving product reliability.

[0013] In some embodiments, determining the film thickness between the first surface and the second surface according to the target frequency includes: determining a target skin depth according to the target frequency; and using the target skin depth as the film thickness between the first surface and the second surface.

[0014] Through the above-mentioned technical means, after determining the target frequency, taking into account the skin depth caused by the current skin effect, the corresponding target skin depth can be determined according to the target frequency, and the target skin depth is the film thickness of the interface of the connecting component, so as to judge whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component.

[0015] In some embodiments, determining a target skin depth according to a target frequency includes: determining a target skin depth corresponding to the target frequency according to a first mapping relationship between frequency and skin depth; wherein the skin depth is generated based on a current skin effect when an output current of an AC source flows through a first surface and a second surface.

[0016] Through the above technical means, a first mapping relationship between frequency and skin depth can be pre-established based on the skin depth generated by the current skin effect. In this way, after determining the target frequency, the target skin depth corresponding to the target frequency can be obtained in combination with the first mapping relationship, so that the corresponding film thickness can be obtained, and then it can be determined whether there is a connection abnormality in the connection component.

[0017] In some embodiments, the first mapping relationship indicates that there is an inverse proportional relationship between frequency and skin depth.

[0018] Through the above technical means, due to the skin effect produced by the alternating current, as the frequency gradually increases from low frequency to high frequency, the skin depth changes from large to small, that is, the frequency and skin depth are inversely proportional, so that the target skin depth corresponding to the target frequency can be accurately determined.

[0019] In some embodiments, based on the resistance calculation values ​​corresponding to each of the multiple frequencies, a target frequency corresponding to when the resistance calculation value mutates is determined, including: establishing a second mapping relationship between frequency and resistance value based on the multiple frequencies and the resistance calculation values ​​corresponding to each of the multiple frequencies; determining a mutation point in the second mapping relationship, and using the frequency value corresponding to the mutation point as the target frequency.

[0020] Through the above-mentioned technical means, after obtaining multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies, a fitting operation can be performed based on the multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies to establish a second mapping relationship between frequency and resistance value; due to the skin effect generated by the current, there is a large difference in the resistivity of the interface where the current flows through the conductor and the film layer and the current flows through the film layer entirely, resulting in a resistance value mutation point in the second mapping relationship, and the frequency value corresponding to the mutation point is the target frequency.

[0021] In some embodiments, the abnormality detection method also includes: determining the skin depth corresponding to each of the multiple frequencies according to a first mapping relationship between frequency and skin depth to obtain multiple candidate skin depths; determining the resistance value corresponding to each of the multiple candidate skin depths according to a third mapping relationship between skin depth and resistance value; determining the target skin depth value corresponding to a sudden change in resistance value according to the resistance value corresponding to each of the multiple candidate skin depths, and determining the target skin depth value as the film thickness.

[0022] Through the above-mentioned technical means, after the skin depths corresponding to multiple frequencies are determined according to the first mapping relationship between frequency and skin depth, multiple candidate skin depths can be obtained; then, according to the third mapping relationship between skin depth and resistance value, the resistance values ​​corresponding to the multiple candidate skin depths can be determined; since there are sudden changes in resistance values ​​among these resistance values, the target skin depth value corresponding to the sudden change in resistance value can be used as the final film thickness, and then it can be determined whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component.

[0023] In some embodiments, determining whether there is a connection abnormality in the connecting component is based on the film thickness, including: when the film thickness meets a preset range, determining that there is no connection abnormality in the connecting component; when the film thickness exceeds the preset range, determining that there is a connection abnormality in the connecting component.

[0024] Through the above technical means, if the film thickness meets the preset range, it means that the film formed by the interface contaminants of the connection component is relatively thin, which will not affect the electrical connection, so it can be determined that there is no abnormal connection in the connection component. If the film thickness exceeds the preset range, it means that the film formed by the interface contaminants of the connection component is relatively thick, which may affect the electrical connection, so it can be determined that there is an abnormal connection in the connection component, thereby improving the accuracy of abnormal detection of the connection component.

[0025] In a second aspect, an embodiment of the present application provides an abnormality detection device for a connection component, the connection component includes a first conductor and a second conductor, the first surface of the first conductor contacts the second surface of the second conductor, and the first conductor, the second conductor and an AC source are connected in series to form a test loop; the abnormality detection device includes a measuring unit, a calculating unit, a determining unit and a detecting unit, wherein:

[0026] A measuring unit configured to determine a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency when the frequency output by the AC source changes from the first frequency to the second frequency; wherein the first current is output by the AC source, and the first voltage refers to a voltage drop between the first surface and the second surface;

[0027] A calculation unit, configured to determine resistance calculation values ​​corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies;

[0028] A determination unit is configured to determine a target frequency corresponding to a sudden change in the resistance calculated value according to the resistance calculated values ​​corresponding to each of the multiple frequencies; and determine a film thickness between the first surface and the second surface according to the target frequency, wherein the film thickness is equal to a target skin depth corresponding to the target frequency;

[0029] The detection unit is configured to determine whether there is any connection abnormality in the connection component according to the thickness of the film layer.

[0030] Through the above-mentioned technical means, in the abnormality detection device, the frequency change of the AC source is utilized. After determining the target frequency corresponding to the sudden change in the calculated resistance value, the film thickness can be determined according to the target frequency. Then, the film thickness can be used to determine whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component; and when a connection abnormality is detected in the connecting component, the connecting component can be stopped from being used, thereby reducing problems such as abnormal temperature rise and power loss caused by the connection abnormality, thereby improving product reliability.

[0031] In a third aspect, an embodiment of the present application provides an electronic device, the electronic device comprising a memory and a processor, wherein:

[0032] A memory for storing computer programs that can be run on the processor;

[0033] A processor is used to execute the steps of the anomaly detection method as described in any one of the first aspects when running a computer program.

[0034] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the steps of the anomaly detection method as described in any one of the first aspects are implemented.

[0035] In a fifth aspect, an embodiment of the present application provides a computer program product, including a computer program or instructions, which, when executed by a processor, implements the steps of the anomaly detection method as described in any one of the first aspects.

[0036] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and are not intended to limit the technical solutions of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 A schematic diagram of a method for detecting anomalies provided in an embodiment of the present application Figure 1 ;

[0038] Figure 2 A schematic diagram of the microstructure of a connecting component provided in an embodiment of the present application;

[0039] Figure 3 A schematic diagram of the structure of a test system provided in an embodiment of the present application Figure 1 ;

[0040] Figure 4 A schematic diagram of the structure of a test system provided in an embodiment of the present application Figure 2 ;

[0041] Figure 5 A schematic diagram of a method for detecting anomalies provided in an embodiment of the present application Figure 2 ;

[0042] Figure 6 A schematic diagram of a method for detecting anomalies provided in an embodiment of the present application Figure 3 ;

[0043] Figure 7 A partially enlarged schematic diagram of a microscopic contact point provided in an embodiment of the present application;

[0044] Figure 8 A detailed flowchart of an anomaly detection method provided in an embodiment of the present application;

[0045] Fig. 9 A schematic diagram of the principle of generating the current skin effect provided in an embodiment of the present application;

[0046] Fig.10 A schematic diagram of the structure of an abnormality detection device provided in an embodiment of the present application;

[0047] Fig.11 A schematic diagram of the hardware structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] In order to enable a more detailed understanding of the features and technical contents of the embodiments of the present application, the implementation of the embodiments of the present application is described in detail below in conjunction with the accompanying drawings. The attached drawings are for reference only and are not used to limit the embodiments of the present application.

[0049] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0050] In the following description, reference is made to “some embodiments”, which describe a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0051] It should also be pointed out that the terms "first\second\third" involved in the embodiments of the present application are only used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of the present application described here can be implemented in an order other than that illustrated or described here.

[0052] In addition, the reference to "embodiment" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiment may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0053] Before describing the embodiments of the present application in detail, the nouns and terms involved in the embodiments of the present application are described first. The nouns and terms involved in the embodiments of the present application are subject to the following interpretations:

[0054] Skin effect: It can also be called "skin effect". When alternating current passes through a wire, the distribution of current on the cross-section of the wire is uneven. The current density on the surface of the conductor is greater than the current density inside the conductor. The higher the frequency of the alternating current, the more obvious this trend is. This phenomenon is called skin effect.

[0055] Skin depth: It can also be called "skin depth", which is caused by the skin effect. When a high-frequency current passes through a wire, it can be considered that the current only flows in a very thin layer on the surface of the wire, which is equivalent to a reduction in the cross-section of the wire and an increase in resistance. Since there is almost no current passing through the center of the wire, this center can be removed to save materials. Therefore, in high-frequency circuits, hollow wires can be used instead of solid wires, and the thickness of this wire is called skin depth. Or it can be understood that skin depth refers to the depth where the current density decreases to 1 / e of the current density on the surface of the conductor cross section.

[0056] Contact resistance: The resistance generated by the connection between the first conductor and the second conductor that are in contact with each other.

[0057] Film resistance: Due to the gap between the contact surfaces of the first conductor and the second conductor, a contaminated film will be formed. This part of the film is generally semiconductor in nature, and its resistance value is much higher than that of the metal spots. The resulting resistance is called film resistance.

[0058] Mutation: refers to a sudden and sharp change. Here, taking the resistance value as an example, a sudden change in the resistance value can mean that with the smooth change of frequency, the resistance value suddenly changes sharply at a certain frequency, for example, the resistance value changes by at least 1000 times. This phenomenon is called a mutation. Correspondingly, the position where the sharp change occurs can be called a "mutation point".

[0059] It should also be understood that battery cells are an important part of batteries, and new energy batteries are being used more and more widely in life and industry. For example, new energy vehicles equipped with batteries have been widely used. In addition, batteries are also being increasingly used in the field of energy storage.

[0060] At present, new energy batteries are increasingly used in life and industry. New energy batteries are not only used in energy storage power systems such as hydropower, thermal power, wind power and solar power stations, but are also widely used in electric vehicles such as electric bicycles, electric motorcycles, electric cars, as well as aerospace and other fields. With the continuous expansion of the application field of power batteries, the market demand is also constantly expanding.

[0061] In the embodiments of the present application, the battery may be a battery cell, or may be a battery pack (Pack) composed of multiple battery cells. A battery cell refers to a basic unit that can realize the mutual conversion of chemical energy and electrical energy, and can be used to make a battery module or a battery pack, so as to supply power to an electrical device. A battery cell may be a secondary battery, which refers to a battery cell that can be activated by charging the active material after the battery cell is discharged and can continue to be used. The battery cell may be a lithium-ion battery, a sodium-ion battery, a sodium-lithium-ion battery, a lithium metal battery, a sodium metal battery, a lithium-sulfur battery, a magnesium-ion battery, a nickel-hydrogen battery, a nickel-cadmium battery, a lead-acid battery, etc., which is not limited here.

[0062] In the embodiment of the present application, the battery may also be a single physical module including one or more battery cells to provide higher voltage and capacity. When there are multiple battery cells, the multiple battery cells are connected in series, in parallel or in hybrid connection through a busbar component.

[0063] Alternatively, with the widespread application of batteries in the fields of power batteries and energy storage, the replacement of fuel vehicles by electric vehicles has become a development trend in the automotive industry. In the production process of battery products, it is necessary to control the connection reliability of connecting components (or "connection modules", "electrical connectors", etc.) to ensure that the battery meets the use requirements after leaving the factory. With the demand for high-current charging at a charging rate of 4C / 5C or higher, it is necessary to control the temperature rise influence conditions at the high-voltage connection. Among them, since the contact surface of the connecting component cannot fit perfectly, there must be a film layer formed by pollutants on the contact surface, generally oxides, sulfides, impurity attachment, etc. The film layer has a great influence on the temperature rise under high current conditions, and the abnormality of the film layer is prone to cause power loss, excessive temperature rise and other problems, resulting in loss of life of the connecting component and reducing product reliability.

[0064] Based on this, the embodiment of the present application provides a method for detecting abnormality of a connecting component, which is specifically used to detect the thickness of a film layer at the interface of a connecting component. The detection process may include: when the frequency output by the AC source changes from the first frequency to the second frequency, determining the first voltage and the first current obtained at multiple frequencies between the first frequency and the second frequency; determining the resistance calculation values ​​corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies; then determining the target frequency corresponding to the resistance calculation value when the resistance calculation value suddenly changes according to the resistance calculation values ​​corresponding to the multiple frequencies; determining the film thickness between the first surface and the second surface according to the target frequency, and then determining whether the connecting component has a connection abnormality according to the film thickness. In this way, by using the frequency change of the AC source, after determining the target frequency corresponding to the sudden change of the resistance calculation value, the film thickness can be determined according to the target frequency, and the connection abnormality of the connecting component can be judged by the film thickness, thereby improving the accuracy of abnormal detection of the connecting component; and when the connection abnormality is detected, the connecting component can be stopped from being used, thereby reducing the problems of abnormal temperature rise and power loss caused by the abnormal connection, thereby improving the reliability of the product.

[0065] The various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0066] In one embodiment of the present application, Figure 1 A schematic diagram of a method for detecting anomalies provided in an embodiment of the present application Figure 1 .like Figure 1 As shown, the anomaly detection method may include:

[0067] S101 , when the frequency output by the alternating current source changes from a first frequency to a second frequency, determining a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency.

[0068] In an embodiment of the present application, the abnormality detection method is applied to a connecting component, which may include a first conductor and a second conductor. The first surface of the first conductor contacts the second surface of the second conductor, so the first surface and the second surface can also be referred to as "contact surfaces", or simply "contact surfaces".

[0069] For example, Figure 2 A schematic diagram of the microstructure of a connecting component provided in an embodiment of the present application. Figure 2As shown, the connecting component 20 may include a first conductor 201 and a second conductor 202. The first surface U1 of the first conductor 201 is in contact with the second surface U2 of the second conductor 202. When observing the first surface U1 and the first surface U2 under a microscope, it can be seen that micron-level protrusions are scattered on the two surfaces, so that the first surface U1 and the second surface U2 are not in full contact with each other. In this way, there must be a film layer formed by pollutants such as oxides, sulfides, and impurity attachment on the first surface U1 and the second surface U2.

[0070] In an embodiment of the present application, in order to detect the film thickness of the connecting component, a test system can also be provided, which mainly includes: a first conductor and a second conductor of the connecting component, an AC source and a voltmeter, etc., and the first conductor, the second conductor and the AC source are connected in series to form a test circuit, and two test leads of the voltmeter are respectively connected to the two surfaces of the first conductor and the second conductor in contact. Here, the first current can be output by the AC source, and the first voltage can refer to the voltage drop between the first surface and the second surface.

[0071] For example, Figure 3 A schematic diagram of the structure of a test system provided in an embodiment of the present application Figure 1 The test system may include: a first conductor 201, a second conductor 202, an AC source 203 and a voltmeter 204, wherein the first conductor 201, the second conductor 202 and the AC source 203 are connected in series to form a test loop. The AC source 203 is connected between two non-contacting surfaces of the first conductor 201 and the second conductor 202, and the voltmeter 204 is connected between two contacting surfaces of the first conductor 201 and the second conductor 202.

[0072] That is to say, in the embodiment of the present application, the first current may be directly output by the AC source 203 , and the first voltage is obtained by measuring the voltage drop between the first surface U1 and the second surface U2 by the voltmeter 204 .

[0073] It should also be noted that, in the embodiment of the present application, for the measurement of the first voltage and the first current, a four-wire method can be used, which uses four wires to connect a measuring instrument (such as an AC source, a voltmeter, etc.) and a component under test, so as to accurately measure the resistance value. Among them, by introducing current into the two ends of the component under test and measuring the voltage at both ends of the component under test through two other independent leads, the influence of the resistance of the connecting wire on the measurement result can be eliminated.

[0074] It should also be noted that, in the embodiment of the present application, the AC source 203 may be a variable frequency AC excitation source, capable of outputting AC current at different frequencies, and therefore may also be referred to herein as an "adjustable frequency AC current source". In addition, the voltmeter 204 may be a high-precision voltmeter, such as a high-precision seven-and-a-half-digit voltmeter. The voltmeter 204 is used to measure the voltage drop between the first surface U1 and the second surface U2.

[0075] In addition, it should be noted that the ammeter is used to measure the current between the first conductor and the second conductor. However, in the test loop, the ammeter is not necessarily present. For example, if the AC source 203 can display the magnitude of the AC current, then there is no need to add an additional ammeter, such as Figure 3 Alternatively, if the AC source 203 cannot display the magnitude of the AC current, an additional ammeter 205 is required, and the ammeter 205 is connected in series in the test loop, as shown in FIG. Figure 4 shown.

[0076] That is, when the frequency of the AC source 203 changes from the first frequency to the second frequency, for multiple frequencies between the first frequency and the second frequency, the first current output by the AC source 203 and the first voltage output by the voltmeter 204 can be obtained at each frequency. It should be noted that the first current at multiple frequencies is fixed.

[0077] In the embodiment of the present application, the frequency here refers to the AC frequency. For example, the first AC frequency can be referred to as the "first frequency" and the second AC frequency can be referred to as the "second frequency". In addition, the first frequency is different from the second frequency. For example, the first frequency can be higher than the second frequency, and the frequency of the AC source 203 changes from a high frequency to a low frequency; or the first frequency can be lower than the second frequency, and the frequency of the AC source 203 changes from a low frequency to a high frequency; here, no limitation is made.

[0078] S102, determining resistance calculation values ​​corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies.

[0079] It should be noted that in the embodiment of the present application, after obtaining the first voltage and the first current at multiple frequencies, the resistance calculation values ​​corresponding to each of the multiple frequencies can be obtained according to the resistance calculation formula R=U / I, where U represents the first voltage, I represents the first current, and R represents the resistance calculation value.

[0080] It should also be noted that, in the case of multiple frequencies output by the AC source, the first current output by the AC source is fixed. That is, as the frequency of the AC source changes from the first frequency to the second frequency, the magnitude of the first current does not change; that is, in the case of a fixed magnitude of the first current output by the AC source, the frequency of the AC source is controlled to change from the first frequency to the second frequency.

[0081] It should also be noted that in the embodiments of the present application, the resistance R here can be called "additional resistance". Additional resistance includes contact resistance and film resistance. Among them, contact resistance refers to the resistance generated by the connection between the first conductor and the second conductor that are in contact with each other. For the film resistance, considering that the actual contact surface between the first conductor and the second conductor can be divided into two parts: ① The direct contact part between metal and metal: the contact spots between metals, which account for about 5% to 10% of the actual contact area; ② The gaps between the contact interfaces will form a layer of contaminated film. This part of the film is generally semiconductor in nature, and its resistance value far exceeds that of the metal spots. The resistance generated is called film resistance, which is also the biggest factor affecting the reliability of electrical connection contact.

[0082] That is to say, in the embodiment of the present application, the calculated resistance value of the additional resistor is obtained by calculating R=U / I based on the first voltage and the first current obtained at multiple frequencies.

[0083] S103, determining a target frequency corresponding to a sudden change in the resistance calculation value according to the resistance calculation values ​​corresponding to the plurality of frequencies.

[0084] S104, determining the thickness of the film layer between the first surface and the second surface according to the target frequency.

[0085] In the embodiment of the present application, the multiple frequencies may be changed from low frequency to high frequency or from high frequency to low frequency. As the frequency changes, the corresponding calculated resistance value will also change. However, when at a critical position, the calculated resistance value will suddenly change. Here, the sudden change in the calculated resistance value means that the change in the calculated resistance value is higher than the preset value, for example, the resistance value suddenly changes by at least 1000 times.

[0086] It should be noted that the resistivity of conductors and semiconductors is different. The resistivity of semiconductors is 10 -5 ~10 8 Ω.m, the resistivity of the conductor is less than 10 -5 Ω.m; the resistance value of the conductor and the resistance value of the semiconductor will change greatly. For example, the resistance value of the semiconductor is between 1 and 10 5 The resistance of a conductor is between milliohms and microohms, which is at least 1000 times different.

[0087] That is to say, in the embodiment of the present application, when the current flows through the conductor and the film layer together, the current flows through the interface where the conductor and the semiconductor are mixed, and the resistance value changes smoothly; if the current flows entirely through the film layer, since the material of the film layer is a semiconductor, the resistance value generated at this time will undergo a sudden change of 10E3 to 10E6 times. Based on this, the target frequency corresponding to the sudden change in the calculated resistance value can be determined.

[0088] It should also be noted that in the embodiment of the present application, the position corresponding to the target frequency is taken into account, indicating the critical position where the current changes from flowing through both the conductor and the film layer to flowing through only the film layer, so that the thickness of the film layer between the first surface and the second surface can be determined based on the skin depth generated by the current skin effect at the target frequency. In other words, the thickness of the film layer is equal to the target skin depth corresponding to the target frequency.

[0089] S105, determining whether there is any connection abnormality in the connection component according to the film thickness.

[0090] In the embodiment of the present application, after determining the thickness of the film layer, it is possible to determine whether there is a connection abnormality in the connecting component based on the thickness of the film layer, rather than judging by setting a resistance threshold as in the related art, thereby improving the accuracy of abnormality detection.

[0091] In some embodiments, determining whether there is a connection abnormality in the connecting component based on the film thickness may include: determining that there is no connection abnormality in the connecting component when the film thickness meets a preset range; and determining that there is a connection abnormality in the connecting component when the film thickness exceeds the preset range.

[0092] It should be noted that in the embodiments of the present application, the preset range is a criterion for judging whether there is a connection abnormality in the connection component, and can be used to judge whether the film layer will affect the electrical connection. If the film layer is thick, it will cause power loss and temperature rise abnormality caused by abnormal contact resistance, thereby having a harmful effect on the electrical connection. Therefore, it is usually desired that the film layer thickness is as thin as possible. Exemplarily, the preset range can be 0~1mm.

[0093] That is to say, in the embodiment of the present application, if the film thickness is within the range of 0-1 mm, for example, when the film thickness is less than or equal to 1 mm, it indicates that the film layer formed by the interface contaminants of the connection component is relatively thin, and will not affect the electrical connection at this time, so it can be determined that there is no abnormal connection in the connection component. If the film thickness is greater than 1 mm, it indicates that the film layer formed by the interface contaminants of the connection component is relatively thick, and may affect the electrical connection at this time, so it can be determined that there is an abnormal connection in the connection component.

[0094] The embodiment of the present application provides an abnormality detection method, when the frequency output by the AC source changes from the first frequency to the second frequency, the first voltage and the first current obtained at multiple frequencies between the first frequency and the second frequency are determined; then, according to the first voltage and the first current obtained at the multiple frequencies, the resistance calculation values ​​corresponding to each of the multiple frequencies are determined; then, according to the resistance calculation values ​​corresponding to each of the multiple frequencies, the target frequency corresponding to the resistance calculation value when a sudden change occurs is determined; according to the target frequency, the film thickness between the first surface and the second surface is determined; finally, according to the film thickness, whether there is a connection abnormality in the connecting component is determined. In this way, by utilizing the frequency change of the AC source, after determining the target frequency corresponding to the sudden change in the resistance calculation value, the film thickness can be determined according to the target frequency, and the connection abnormality of the connecting component can be judged by the film thickness, thereby improving the abnormality detection accuracy of the connecting component; and when the connection abnormality is detected, the connecting component can be stopped from being used, thereby reducing the problems of abnormal temperature rise and power loss caused by the connection abnormality, thereby improving the reliability of the product.

[0095] In another embodiment of the present application, based on the anomaly detection method of the aforementioned embodiment, Figure 5 A schematic diagram of a method for detecting anomalies provided in an embodiment of the present application Figure 2 .like Figure 5 As shown, after step S103, the anomaly detection method may include:

[0096] S501, determining a target skin depth according to a target frequency.

[0097] In an embodiment of the present application, there is a first mapping relationship between frequency and skin depth. Different frequencies may correspond to different skin depths. In some embodiments, determining the target skin depth according to the target frequency may include: determining the target skin depth corresponding to the target frequency according to the first mapping relationship between frequency and skin depth.

[0098] In the embodiment of the present application, the skin depth is generated based on the current skin effect when the output current of the AC source flows through the first surface and the second surface. After the target frequency is determined, the target skin depth corresponding to the target frequency can be determined according to the first mapping relationship between the frequency and the skin depth.

[0099] Exemplarily, when current flows through the surface of a conductor, skin depth is generated by the skin effect. The first mapping relationship between frequency and skin depth can be expressed by the following formula:

[0100] (1)

[0101] Here, represents the skin depth, represents the conductor resistivity, Indicates frequency, Represents the magnetic permeability of vacuum.

[0102] Thus, in the embodiment of the present application, a first mapping relationship between frequency and skin depth can be pre-established based on the skin depth generated by the current skin effect. Thus, after determining the target frequency, the target skin depth corresponding to the target frequency can be obtained in combination with the first mapping relationship, so that the corresponding film thickness can be obtained, and then it can be determined whether there is a connection abnormality in the connection component.

[0103] In some embodiments, the first mapping relationship indicates that there is an inverse proportional relationship between frequency and skin depth.

[0104] That is to say, in the embodiment of the present application, due to the skin effect generated by the alternating current, as the frequency gradually increases from low frequency to high frequency, the skin depth changes from large to small, that is, the frequency and the skin depth are inversely proportional, so that the target skin depth corresponding to the target frequency can be accurately determined.

[0105] S502, taking the target skin depth as the thickness of the film layer between the first surface and the second surface.

[0106] In the embodiment of the present application, when the frequency gradually increases from low frequency to high frequency, the current skin depth changes from large to small. At this time, the relationship between the current flowing through different skin depths and the additional resistance is: when the current skin depth is greater than the film thickness, the current flows through the conductor and the film layer together, and the current flows through the interface where the conductor and the semiconductor are mixed, and the resistance value changes smoothly; when the current skin depth is less than the film thickness, the current flows through the film layer entirely, and the material of the film layer is a semiconductor as a whole. At this time, the resistance value generated will change by 10 3 ~10 6 Therefore, the corresponding target skin depth can be determined according to the target frequency at which the resistance value suddenly changes, and the target skin depth is the film thickness at the interface of the connecting component.

[0107] Thus, in the embodiment of the present application, after determining the target frequency, the skin depth caused by the current skin effect is taken into consideration, and the corresponding target skin depth can be determined according to the target frequency. Moreover, the target skin depth is the thickness of the film layer at the interface of the connecting component, and thus it can be determined whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component.

[0108] In some embodiments, for step S103, determining the target frequency corresponding to a sudden change in the resistance calculation value based on the resistance calculation values ​​corresponding to each of the multiple frequencies may include: establishing a second mapping relationship between frequency and resistance value based on the multiple frequencies and the resistance calculation values ​​corresponding to each of the multiple frequencies; determining a mutation point in the second mapping relationship, and using the frequency value corresponding to the mutation point as the target frequency.

[0109] It should be noted that in the embodiment of the present application, after obtaining multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies, a fitting operation can be performed according to the multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies to establish a second mapping relationship between the frequency and the resistance value. Among them, when the frequency gradually increases from low frequency to high frequency, the current skin depth changes from large to small, and the additional resistance generated changes from small to large. In other words, the second mapping relationship indicates that there is a positive proportional relationship between the frequency and the resistance value, and as the frequency gradually increases, the resistance value corresponding to the additional resistance also changes from small to large.

[0110] It should also be noted that in the embodiment of the present application, due to the skin effect generated by the alternating current, the current can flow through the conductor and the film layer together, or the current can flow through the film layer entirely. Due to the difference between the resistivity of the semiconductor and the resistivity of the conductor, when the current flows through the conductor and the film layer together, the current flows through the interface where the conductor and the semiconductor are mixed, and the resistance value changes smoothly at this time; when the current flows through the film layer entirely, the material of the film layer is a semiconductor, and the resistance value at this time will undergo a mutation of at least 1000 times. Therefore, the frequency value corresponding to the mutation point in the second mapping relationship is the target frequency.

[0111] Thus, in the embodiment of the present application, after obtaining multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies, a fitting operation can be performed based on the multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies to establish a second mapping relationship between frequency and resistance value; due to the skin effect generated by the current, there is a large difference in resistivity between the interface where the current flows through the conductor and the film layer and the current flows through the film layer entirely, resulting in a resistance value mutation point in the second mapping relationship, and the frequency value corresponding to the mutation point is the target frequency.

[0112] In some embodiments, for determination of film thickness, see Figure 6 , the anomaly detection method may further include:

[0113] S601, determining skin depths corresponding to a plurality of frequencies respectively according to a first mapping relationship between frequency and skin depth, to obtain a plurality of candidate skin depths.

[0114] S602 , determining resistance values ​​corresponding to respective ones of a plurality of candidate skin depths according to a third mapping relationship between skin depths and resistance values.

[0115] S603 , determining a target skin depth value corresponding to a sudden change in the resistance value according to the resistance values ​​corresponding to the plurality of candidate skin depths, and determining the target skin depth value as the film thickness.

[0116] It should be noted that in the embodiment of the present application, after obtaining the first mapping relationship between frequency and skin depth, multiple corresponding candidate skin depths can be determined according to multiple frequencies; then, according to the third mapping relationship between skin depth and resistance value, the resistance values ​​corresponding to the multiple candidate skin depths can be determined, from which the target skin depth value corresponding to the sudden change in resistance value can be determined, so as to obtain the film thickness.

[0117] It should also be noted that, in the embodiment of the present application, the third mapping relationship between skin depth and resistance value, that is, the calculation formula of the additional resistance generated by the skin effect is as follows:

[0118] (2)

[0119] Here, Indicates the resistance value of the additional resistor, represents the skin depth, represents the conductor resistivity, represents the minimum radius of the microscopic contact point between the first conductor and the second conductor, Represents the maximum radius of the microscopic contact point between the first conductor and the second conductor.

[0120] For example, it is assumed that each microscopic contact point on the interface between the first conductor and the second conductor is an ideal spherical surface, and it is assumed that each microscopic contact point on the interface is an ideal spherical surface. Figure 7 As shown, the microscopic contact point on the first surface U1 of the first conductor can be regarded as a spherical surface, and the microscopic contact point on the second surface U2 of the second conductor can also be regarded as a spherical surface; then the resistance value generated at this time is calculated according to the contact model of the spherical conductor. Wherein, B represents the radius of the ideal sphere, represents the minimum radius, Indicates the maximum radius.

[0121] It should also be noted that in the embodiment of the present application, the change of frequency will not change the contact surface, that is, and does not change with frequency, so and The value of can be an estimated constant.

[0122] Thus, in the embodiment of the present application, after determining the skin depths corresponding to each of the multiple frequencies according to the first mapping relationship between the frequency and the skin depth, a plurality of candidate skin depths can be obtained; then, according to the third mapping relationship between the skin depth and the resistance value, the resistance values ​​corresponding to each of the multiple candidate skin depths can be determined; since there are sudden changes in the resistance values ​​among these resistance values, the target skin depth value corresponding to the sudden change in the resistance value can be used as the final film thickness, and then it can be determined whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component.

[0123] The embodiment of the present application provides an abnormality detection method, which utilizes the frequency change of the AC source, and after determining the target frequency corresponding to the sudden change of the calculated resistance value, the film thickness can be determined. The film thickness can be used to determine whether the connection component has a connection abnormality, thereby improving the accuracy of abnormality detection of the connection component; and when the connection component is detected to have a connection abnormality, it can be stopped from being used, thereby reducing problems such as abnormal temperature rise and power loss caused by the connection abnormality, thereby improving product reliability.

[0124] In another embodiment of the present application, based on the abnormality detection method of the aforementioned embodiment, an electrical connection detection scheme for a connecting component is provided, which can detect the microscopic film thickness of the interface of the connecting component. Among them, a variable frequency AC excitation source can be introduced by utilizing the characteristics of AC power, and the relationship between the frequency of the AC source and the skin depth is established through testing, and then the film thickness of the interface can be determined based on the relationship between the skin depth and the additional resistance.

[0125] In the embodiment of the present application, the embodiment of the present application can support all electrical connection interfaces except Figure 2 In addition to the surface contact connection of the connecting components shown, the test can also be extended to other electrical connection scenarios such as welding, crimping, etc., without any limitation here.

[0126] In one possible implementation, Figure 8 A detailed flow chart of an abnormality detection method provided in an embodiment of the present application. Figure 8 As shown, the detailed process may include:

[0127] S801, based on a variable-frequency AC source, determining that the frequency of the AC source changes from a low frequency to a high frequency.

[0128] S802: Establish a first mapping relationship between frequency and skin depth.

[0129] In the embodiment of the present application, the frequency can be The skin depth can be expressed as The first mapping relationship can be a frequency Skin Depth The function curve between, where the X-axis represents the frequency , the Y axis represents the skin depth .

[0130] S803, establishing a third mapping relationship between skin depth and additional resistance.

[0131] In the embodiment of the present application, the resistance value of the additional resistor can be The skin depth can be expressed as The third mapping relationship can be skin depth With the resistance value of the additional resistor The function curve between, where the X-axis represents the skin depth , the Y axis represents the resistance value of the additional resistor .

[0132] S804: Based on the third mapping relationship, the resistance value at the critical position suddenly increases by at least 1000 times.

[0133] S805, determining the film thickness of the interface according to the critical position.

[0134] In the embodiment of the present application, it is assumed that the critical position is Indicates that based on the skin depth With the resistance value of the additional resistor The relationship between The resistance value at mutation at least 1000-fold; thus, according to the critical position , the film thickness at the interface can be determined.

[0135] It can be understood that in the embodiment of the present application, the test system mainly includes three parts: an adjustable frequency AC source, a high-precision seven-and-a-half-digit voltmeter, and a connection component to be tested. The specific process is as follows:

[0136] (1) A fixed AC current is passed on both sides of the interface of the connected component under test, and the frequency of the AC source is controlled to change from low frequency to high frequency;

[0137] (2) Use a 7.5-digit multimeter to collect the voltage drop when the current flows through, and calculate the additional resistance generated by the interface at this time using R=U / I;

[0138] (3) Due to the skin effect caused by the alternating current, the skin effect will produce additional resistance. As the frequency increases, the skin depth changes from large to small, and the additional resistance generated changes from small to large;

[0139] (4) When the frequency changes from low frequency to high frequency, the current skin depth changes from large to small. The relationship between the current flowing through different current skin depths and the additional resistance is:

[0140] ① When the skin depth is greater than the film thickness, the current flows through the conductor and the film together, and the current flows through the interface where the conductor and the semiconductor are mixed, and the resistance value changes smoothly;

[0141] ② When the skin depth is less than the film thickness, the current flows entirely through the film, and the film material is a semiconductor. At this time, the resistance value generated will be 10 3 ~10 6 times mutation.

[0142] (5) Based on the frequency of the resistance mutation point The corresponding skin depth can be determined , at this time That is the thickness of the film layer at the interface of the connecting parts.

[0143] It can be understood that in the embodiments of the present application, the microscopic conditions of the interface of the connecting parts can be referred to in the aforementioned Figure 2 When observing the contact surface of the connecting parts under a microscope, it can be seen that micron-level protrusions are scattered on the contact surface, and not the entire contact surface is in contact.

[0144] Here, the additional resistance includes at least contact resistance and film resistance. Among them, the resistance generated by the connection between two conductors in contact with each other is called contact resistance. For film resistance, the actual contact surface is divided into two parts: ① The direct contact part between metal and metal: the contact spots between metals, which account for about 5%~10% of the actual contact area; ② The gap between the contact interface will form a layer of contaminated film. This part of the film is generally semiconductor in nature, and the resistance value is far greater than that of the metal spots. The resistance generated is called film resistance, which is also the biggest factor affecting the reliability of electrical connection contact.

[0145] It can also be understood that in the embodiment of the present application, for the test method of the embodiment of the present application, a four-wire method can be used here: inject a variable frequency AC source, and calculate the resistance value of the additional resistor by testing the voltage (R=U / I), as described above. Figure 3 or Figure 4 shown.

[0146] Here, for the skin effect, when there is an alternating current / alternating electromagnetic field in a conductor, the current distribution inside the conductor is uneven, for example, it is concentrated in a thin layer on the surface of the conductor. The closer to the surface of the conductor (for example, the interface between two conductors, including the first surface U1 and the second surface U2), the greater the current density. Fig. 9 This phenomenon will reduce the effective cross-sectional area through which current flows and significantly increase resistance. This phenomenon is called the current skin effect.

[0147] Here, when current flows through the surface of the conductor, the skin depth δ generated by the current skin effect is calculated as shown in formula (1). The additional resistance generated by the current skin effect is calculated as shown in formula (2).

[0148] The embodiment of the present application provides an abnormality detection method. The specific implementation of the aforementioned embodiment is described in detail through the above embodiment. It can be seen that according to the technical solution of the aforementioned embodiment, the frequency change of the AC source is used. After determining the target frequency corresponding to the sudden change of the calculated resistance value, the film thickness can be determined according to the target frequency, and then the film thickness can be used to determine whether there is a connection abnormality in the connecting component, thereby improving the accuracy of abnormality detection of the connecting component; and when the connection abnormality is detected in the connecting component, it can be stopped from use, thereby not only reducing the power loss caused by the abnormal contact resistance caused by the film layer, but also reducing the abnormal temperature rise caused by the abnormal contact resistance caused by the film layer, avoiding the outflow of abnormal products that cause the loss of the life of the connecting component, and thus improving product reliability. In addition, the embodiment of the present application can support all electrical connection interfaces and can be extended to other tests, such as welding, crimping and other electrical connection scenarios, and has a wide range of applications.

[0149] In another embodiment of the present application, Fig.10 This is a schematic diagram of the structure of an abnormality detection device provided in an embodiment of the present application. Fig.10 As shown, the abnormality detection device 100 is used to detect the abnormality of the connection of the connection component. The connection component may include a first conductor and a second conductor, the first surface of the first conductor is in contact with the second surface of the second conductor, and the first conductor, the second conductor and the AC source are connected in series to form a test loop. The abnormality detection device 100 may include a measuring unit 1001, a calculating unit 1002, a determining unit 1003 and a detecting unit 1004, wherein:

[0150] The measuring unit 1001 is configured to determine a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency when the frequency output by the AC source changes from the first frequency to the second frequency; wherein the first current is output by the AC source, and the first voltage is obtained by measuring a voltage drop between the first surface and the second surface by a voltmeter;

[0151] The calculation unit 1002 is configured to determine the resistance calculation values ​​corresponding to the multiple frequencies respectively according to the first voltage and the first current obtained at the multiple frequencies;

[0152] The determination unit 1003 is configured to determine, according to the resistance calculation values ​​corresponding to the multiple frequencies, a target frequency corresponding to when the resistance calculation value suddenly changes; and determine the thickness of the film layer between the first surface and the second surface according to the target frequency, wherein the film layer thickness is equal to the target skin depth corresponding to the target frequency;

[0153] The detection unit 1004 is configured to determine whether there is any connection abnormality in the connection component according to the thickness of the film layer.

[0154] In some embodiments, the determination unit 1003 is further configured to determine a target skin depth according to a target frequency; and use the target skin depth as the thickness of the film layer between the first surface and the second surface.

[0155] In some embodiments, the determination unit 1003 is further configured to determine a target skin depth corresponding to the target frequency based on a first mapping relationship between frequency and skin depth; wherein the skin depth is generated based on the current skin effect when the output current of the AC source flows through the first surface and the second surface.

[0156] In some embodiments, the first mapping relationship indicates that there is an inverse proportional relationship between frequency and skin depth.

[0157] In some embodiments, the determination unit 1003 is further configured to establish a second mapping relationship between frequency and resistance value according to multiple frequencies and the calculated resistance values ​​corresponding to each of the multiple frequencies; and determine a mutation point in the second mapping relationship, and use the frequency value corresponding to the mutation point as the target frequency.

[0158] In some embodiments, the determination unit 1003 is further configured to determine the skin depth corresponding to each of the multiple frequencies according to a first mapping relationship between the frequency and the skin depth to obtain a plurality of candidate skin depths; determine the resistance value corresponding to each of the multiple candidate skin depths according to a third mapping relationship between the skin depth and the resistance value; and determine the target skin depth value corresponding to a sudden change in the resistance value according to the resistance value corresponding to each of the multiple candidate skin depths, and determine the target skin depth value as the film thickness.

[0159] In some embodiments, the detection unit 1004 is further configured to determine that there is no connection abnormality in the connection component when the film thickness meets the preset range; and to determine that there is a connection abnormality in the connection component when the film thickness exceeds the preset range.

[0160] It should be noted that those skilled in the art should understand that the relevant description of the abnormality detection device 100 in the embodiment of the present application can be understood by referring to the relevant description of the abnormality detection method described in the aforementioned embodiment.

[0161] In addition, in the embodiments of the present application, a "unit" may be a part of a circuit, a part of a processor, a part of a program or software, etc., and of course, it may be a module, or it may be non-modular. Moreover, the components in the present embodiment may be integrated into a processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of a software functional module.

[0162] If the integrated unit is implemented in the form of a software function module and is not sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this embodiment is essentially or the part that contributes to the prior art or the whole or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) or a processor to perform all or part of the steps of the method described in this embodiment. The aforementioned storage medium includes: U disk, mobile hard disk, read only memory (ROM), random access memory (RAM), disk or optical disk, etc., various media that can store program codes.

[0163] Therefore, this embodiment provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the abnormality detection method described in the above embodiment are implemented.

[0164] In some embodiments, based on the composition of the anomaly detection device 100 and the computer-readable storage medium, Fig.11 The hardware structure diagram of an electronic device provided in an embodiment of the present application is shown in FIG. Fig.11 As shown, the electronic device 110 may include a communication interface 1101, a memory 1102, and a processor 1103; each component is coupled together via a bus system 1104. It is understood that the bus system 1104 is used to realize the connection and communication between these components. In addition to the data bus, the bus system 1104 also includes a power bus, a control bus, and a status signal bus. However, for the sake of clarity, Fig.11 In the figure, various buses are labeled as bus system 1104. Among them, the communication interface 1101 is used to receive and send signals in the process of sending and receiving information between other external network elements; the memory 1102 is used to store a computer program that can be run on the processor 1103; the processor 1103 is used to execute the steps of any one of the anomaly detection methods in the above embodiments when running the computer program.

[0165] It is understood that the memory 1102 of the embodiment of the present application may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may be a random access memory (RAM), which is used as an external cache. By way of example and not limitation, many forms of RAM are available, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct memory bus random access memory (DRRAM). The memory 1102 of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0166] The processor 1103 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit or software instructions in the processor 1103. The above-mentioned processor 1103 may be a general-purpose processor, a digital signal processor (Digital Signal Processor, DSP), an application-specific integrated circuit (Application Specific Integrated Circuit, ASIC), a field programmable gate array (Field Programmable Gate Array, FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components. The methods, steps and logic block diagrams disclosed in the embodiments of the present application can be implemented or executed. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The steps of the method disclosed in the embodiments of the present application can be directly embodied as a hardware decoding processor to be executed, or the hardware and software modules in the decoding processor are combined and executed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory 1102, and the processor 1103 reads the information in the memory 1102 and completes the steps of the above method in combination with its hardware.

[0167] It is also understood that the embodiments described herein can be implemented in hardware, software, firmware, middleware, microcode, or a combination thereof. For hardware implementation, the processing unit can be implemented in one or more application specific integrated circuits (ASIC), digital signal processors (DSP), digital signal processing devices (DSPD), programmable logic devices (PLD), field programmable gate arrays (FPGA), general-purpose processors, controllers, microcontrollers, microprocessors, other electronic units for performing the functions described in the present application, or a combination thereof.

[0168] For software implementation, the techniques described herein can be implemented by modules (e.g., procedures, functions, etc.) that perform the functions described herein. The software code can be stored in a memory and executed by a processor. The memory can be implemented in the processor or outside the processor.

[0169] In yet another embodiment of the present application, the embodiment of the present application further provides a computer program product, including a computer program or instructions, which, when executed by a processor, implement the steps of the anomaly detection method as described in the aforementioned embodiment.

[0170] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, devices, equipment, or computer program products. Therefore, the present application may take the form of hardware embodiments, software embodiments, or embodiments combining software and hardware. Moreover, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage and optical storage, etc.) containing computer-usable program codes.

[0171] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0172] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0173] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0174] It should be noted that, in this application, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0175] The serial numbers of the above-mentioned embodiments of the present application are for description only and do not represent the advantages or disadvantages of the embodiments.

[0176] The methods disclosed in several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0177] The features disclosed in several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0178] The features disclosed in several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.

[0179] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.

Claims

1. A method for detecting abnormality of a connection component, characterized in that: The connecting component includes a first conductor and a second conductor, a first surface of the first conductor contacts a second surface of the second conductor, and the first conductor, the second conductor and an AC source are connected in series to form a test loop; the abnormality detection method includes: When the frequency output by the AC source changes from a first frequency to a second frequency, determining a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency; wherein the first current is output by the AC source, and the first voltage refers to a voltage drop between the first surface and the second surface; Determine, according to the first voltage and the first current obtained at the multiple frequencies, the resistance calculation values ​​corresponding to the multiple frequencies respectively; Establishing a second mapping relationship between frequency and resistance value according to the multiple frequencies and the calculated resistance values ​​corresponding to the multiple frequencies; Determine a mutation point in the second mapping relationship when the calculated resistance value mutates, and use a frequency value corresponding to the mutation point as a target frequency; Determining a film layer thickness between the first surface and the second surface according to the target frequency, wherein the film layer thickness is equal to a target skin depth corresponding to the target frequency; Whether the connection component has connection abnormality is determined according to the film layer thickness.

2. The anomaly detection method according to claim 1, characterized in that: The step of determining the thickness of the film layer between the first surface and the second surface according to the target frequency comprises: determining a target skin depth according to the target frequency; The target skin depth is taken as the thickness of the film layer between the first surface and the second surface.

3. The anomaly detection method according to claim 2, characterized in that: Determining the target skin depth according to the target frequency includes: The target skin depth corresponding to the target frequency is determined according to a first mapping relationship between frequency and skin depth; wherein the skin depth is generated based on the current skin effect when the output current of the AC source flows through the first surface and the second surface.

4. The anomaly detection method according to claim 3, characterized in that: The first mapping relationship indicates that there is an inverse proportional relationship between frequency and skin depth.

5. The anomaly detection method according to claim 1, characterized in that: The anomaly detection method further includes: Determine the skin depths corresponding to the multiple frequencies according to a first mapping relationship between frequency and skin depth, so as to obtain multiple candidate skin depths; Determining the resistance values ​​corresponding to each of the plurality of candidate skin depths according to a third mapping relationship between skin depths and resistance values; According to the resistance values ​​corresponding to the multiple candidate skin depths, a target skin depth value corresponding to a sudden change in the resistance value is determined, and the target skin depth value is determined as the film layer thickness.

6. The abnormality detection method according to any one of claims 1 to 5, characterized in that: The determining, based on the film layer thickness, whether the connection component has a connection abnormality includes: When the film thickness meets a preset range, determining that there is no connection abnormality in the connection component; When the film layer thickness exceeds the preset range, it is determined that the connection component has a connection abnormality.

7. A connection component abnormality detection device, characterized in that: The connecting component includes a first conductor and a second conductor, a first surface of the first conductor contacts a second surface of the second conductor, and the first conductor, the second conductor and an AC source are connected in series to form a test loop; the abnormality detection device includes a measuring unit, a calculating unit, a determining unit and a detecting unit, wherein: The measuring unit is configured to determine a first voltage and a first current obtained at a plurality of frequencies between the first frequency and the second frequency when the frequency output by the AC source changes from a first frequency to a second frequency; wherein the first current is output by the AC source, and the first voltage refers to a voltage drop between the first surface and the second surface; The calculation unit is configured to determine the resistance calculation values ​​corresponding to each of the multiple frequencies according to the first voltage and the first current obtained at the multiple frequencies; The determining unit is configured to establish a second mapping relationship between frequency and resistance value according to the multiple frequencies and the resistance calculation values ​​corresponding to the multiple frequencies; determine a mutation point in the second mapping relationship when the resistance calculation value suddenly changes, and use the frequency value corresponding to the mutation point as the target frequency; and determine the film thickness between the first surface and the second surface according to the target frequency, wherein the film thickness is equal to the target skin depth corresponding to the target frequency; The detection unit is configured to determine whether there is a connection abnormality in the connection component according to the thickness of the film layer.

8. An electronic device, characterized in that: The electronic device comprises a memory and a processor, wherein: The memory is used to store a computer program that can be run on the processor; The processor is configured to execute the steps of the anomaly detection method according to any one of claims 1 to 6 when running the computer program.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the abnormality detection method according to any one of claims 1 to 6 are implemented.

10. A computer program product comprising a computer program or instructions, characterized in that When the computer program or instruction is executed by a processor, the steps of the abnormality detection method according to any one of claims 1 to 6 are implemented.

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