Method of forming a bonded assembly and apparatus for forming a bonded assembly

Abstract

According to embodiments of the present application, methods of forming bonded assemblies are provided, which can form a bonded assembly by: providing a wafer including at least a first encapsulation substrate and a second encapsulation substrate in a low-oxygen environment; performing a first substrate processing on the first encapsulation substrate while the first substrate processing has a partial pressure of oxygen below 17 kPa in the low-oxygen environment, performing a first plasma package processing on a first semiconductor package in the low-oxygen environment while the first substrate processing is performed on the first encapsulation substrate; and performing a second substrate processing on the second encapsulation substrate while performing a second plasma package processing on a second semiconductor package while bonding the first semiconductor package to the first encapsulation substrate. According to other embodiments of the present application, apparatuses for forming bonded assemblies are also provided.

Description

Technical Field

[0001] Embodiments of this application relate to the semiconductor field, and more specifically, to a method for forming a bonding assembly and an apparatus for forming a bonding assembly. Background Technology

[0002] Bonding a semiconductor die to a packaging substrate typically involves a plasma processing process followed by a thermo-press bonding process, which can take a long time. Summary of the Invention

[0003] According to an embodiment of this application, a method for forming a bonding assembly is provided, the method comprising: providing at least a first packaging substrate and a second packaging substrate in a low-oxygen environment having an oxygen partial pressure of less than 17 kPa; providing at least a first semiconductor package and a second semiconductor package in the low-oxygen environment; performing a first substrate processing process on the first packaging substrate in the low-oxygen environment, and performing a first plasma package processing process on the first semiconductor package in the low-oxygen environment; and performing a second substrate processing process on the second packaging substrate, and performing a second plasma package processing process on the second semiconductor package while bonding the first semiconductor package to the first packaging substrate.

[0004] According to another embodiment of this application, a method for forming a bonding assembly is provided, the method comprising: providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen environment having an oxygen partial pressure of less than 17 kPa; performing a first substrate processing process on the first packaging substrate in the low-oxygen environment while performing a first plasma packaging process on a first semiconductor package in the low-oxygen environment; performing a second substrate processing process on the second packaging substrate while performing a second plasma packaging process on the second semiconductor package and while bonding the first semiconductor package to the first packaging substrate.

[0005] According to another embodiment of this application, an apparatus for forming a bonding assembly is provided, the apparatus comprising: a process chamber including a chamber housing and an environmental control system configured to provide a low-oxygen environment having an oxygen partial pressure below 17 kPa within a volume spatially defined by the chamber housing; a first plasma processing system located within the process chamber and including a first plasma nozzle and configured to generate a first plasma in a first plasma region; a second plasma processing system located within the process chamber and including a second plasma nozzle configured to generate a second plasma; a thermocompression bonding head configured to bond a semiconductor package to a package substrate; a first transfer system configured to laterally move the semiconductor package to a selected package bonding location selected from a plurality of package bonding locations; and a second transfer system configured to move the second plasma processing system to a selected plasma processing location selected from a plurality of plasma processing locations and configured to move the thermocompression bonding head to a selected bonding location selected from a plurality of bonding locations.

[0006] Embodiments of this application relate to parallel plasma processing and thermo-press bonding, as well as apparatus for implementing them. Attached Figure Description

[0007] The various aspects of this disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, the various components are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various components may be arbitrarily increased or decreased.

[0008] Figure 1 This is a vertical cross-sectional view of a first exemplary device prior to loading a wafer and a semiconductor package, according to embodiments of the present disclosure;

[0009] Figure 2 This is a vertical cross-sectional view of a first exemplary device after loading a wafer and a semiconductor package, according to an embodiment of the present disclosure;

[0010] Figure 3 This is a vertical cross-sectional view of a first exemplary device after the loading side door has been closed, according to an embodiment of the present disclosure;

[0011] Figure 4 This is a vertical cross-sectional view of a first exemplary apparatus during the processing steps of a first plasma package processing process and a first substrate processing process, according to embodiments of the present disclosure.

[0012] Figure 5 This is a vertical cross-sectional view of a first exemplary device after the first semiconductor package has been delivered to a position above the first packaging substrate, according to an embodiment of the present disclosure.

[0013] Figure 6This is a vertical cross-sectional view of a first exemplary apparatus during the processing steps of implementing a first bonding process, a second plasma package processing process, and a second substrate processing process according to embodiments of the present disclosure.

[0014] Figure 7 This is a vertical cross-sectional view of a first exemplary device after the thermo-pressed joint has been moved away from the first joining assembly, according to an embodiment of the present disclosure;

[0015] Figure 8 This is a vertical cross-sectional view of a first exemplary device after the second semiconductor package has been delivered to a position above the second packaging substrate, according to an embodiment of the present disclosure.

[0016] Figure 9 This is a vertical cross-sectional view of a first exemplary apparatus during the processing steps of implementing the second bonding process, the third plasma package processing process, and the third substrate processing process according to embodiments of the present disclosure.

[0017] Figure 10 This is a vertical cross-sectional view of a first exemplary device after the thermo-pressed joint has been moved away from the second joining assembly, according to an embodiment of the present disclosure;

[0018] Figure 11 This is a vertical cross-sectional view of a first exemplary device after the third semiconductor package has been delivered to a position above the third packaging substrate, according to an embodiment of the present disclosure.

[0019] Figure 12 This is a vertical cross-sectional view of a first exemplary apparatus during a processing step of implementing a third bonding process according to an embodiment of the present disclosure;

[0020] Figure 13 This is a vertical cross-sectional view of a first exemplary device during the unloading of an assembly of a semiconductor package and a package substrate according to an embodiment of the present disclosure;

[0021] Figure 14 This is a vertical cross-sectional view of a second exemplary apparatus during the processing steps of a first plasma package processing process and a first substrate processing process, according to embodiments of the present disclosure.

[0022] Figure 15 This is a vertical cross-sectional view of a second exemplary device during the unloading of an assembly of a semiconductor package and a package substrate according to embodiments of the present disclosure;

[0023] Figure 16 This is a first flowchart illustrating the steps for forming a bonding assembly according to an embodiment of the present disclosure;

[0024] Figure 17This is a second flowchart illustrating the steps for forming a bonding assembly according to an embodiment of the present disclosure. Detailed Implementation

[0025] The following disclosure provides numerous different embodiments or instances for implementing various features of this disclosure. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to limit this disclosure. For example, in the following description, forming a first component on or over a second component may include embodiments where the first and second components are in direct contact, and may also include embodiments where an additional component may be formed between the first and second components, thereby allowing the first and second components to not be in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of this disclosure. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0026] Furthermore, for ease of description, spatial relative terms such as "below," "under," "lower part," "above," and "upper part" may be used herein to readily describe the relationship between one element or component and another (or other elements or components) as shown in the figures. In addition to the orientations shown in the figures, spatial relative terms are intended to encompass different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein can be interpreted accordingly. Unless otherwise explicitly stated, it is assumed that the various elements having the same reference numerals have the same material composition and thickness within the same thickness range.

[0027] Before performing the thermocompression bonding (TCB) process between a semiconductor die and a packaging substrate, an atmospheric pressure plasma jet (APPJ) treatment can be performed to remove surface contaminants from the bonding structure and solder material. APPJ is a plasma treatment that can potentially alter the surface properties of materials. Plasma is a state of matter that occurs when a gas is ionized, or when its atoms lose some electrons to create a mixture of ions, electrons, and neutral particles. Plasma can be generated at various pressures, including atmospheric pressure.

[0028] Several factors can contribute to the time-consuming nature of APPJ processing. One factor is the desire for precise control of plasma parameters, such as temperature, plasma density, and gas flow rate. These parameters require careful control to achieve the desired surface modification without damaging the material being processed. Such control can consume significant amounts of the operator's time and attention. Additionally, the material surface may benefit from careful cleaning and preparation prior to APPJ processing. This may include removing contaminants, roughening the surface to improve adhesion, or applying pretreatment to enhance the effectiveness of the plasma treatment. The sequential implementation of APPJ processing and bonding processes for individual bonding pairs on semiconductor dies and packaging substrates can also be time-consuming.

[0029] According to one aspect of this disclosure, apparatus and method are provided for performing APPJ processing and TCB processes in parallel over multiple pairs of corresponding semiconductor dies and corresponding package substrates. A combination of a fixed plasma processing system and a mobile plasma processing system can be used to simultaneously provide plasma processing on one pair of semiconductor dies and package substrates, while performing a thermopressing bonding process on another pair of semiconductor dies and package substrates using a mobile thermopressing bonding head. The plasma processing and bonding processes can be performed in a low-oxygen environment. The bonding interface may be without a bonding line interface. The various embodiments disclosed herein can provide time-efficient execution of APPJ processing and TCB processes.

[0030] refer to Figure 1 This illustration shows a first exemplary apparatus 100 according to an embodiment of the present disclosure. The first exemplary apparatus 100 includes process chambers (30, 32, 34) including a chamber housing 30 and an environmental control system configured to provide a low-oxygen environment 29 within a volume spatially defined by the chamber housing 30. As used herein, a “low-pressure environment” means an environment having an oxygen partial pressure lower than the oxygen partial pressure under standard atmospheric conditions (approximately 21.23 kPa). In one embodiment, the oxygen partial pressure of the low-oxygen environment 29 may be lower than approximately 80% of the oxygen partial pressure under standard atmospheric conditions, for example, lower than 17 kPa. The total pressure of the low-oxygen environment 29 may be in the range of 10 Pa to 120 kPa. The atmospheric pressure under standard atmospheric conditions is 101.33 kPa. In one embodiment, the oxygen partial pressure in the low-oxygen environment 29 may be 1.0 × 10⁻⁶ kPa. -6 The range is from 10.13 kPa to 10.13 kPa. Typically, the low oxygen partial pressure in the low-oxygen environment 29 can be provided by reducing the total pressure of the low-oxygen environment 29 and / or by reducing the oxygen component in the composition of the ambient gases in the low-oxygen environment 29. In one embodiment, the molecular weight of oxygen in the low-oxygen environment 29 can be 1.0 × 10⁻⁶ kPa. -9The oxygen content is within the range of 0.2095 (which is the proportion of oxygen atoms in the normal atmospheric composition). Suitable mechanisms (not explicitly shown), such as ambient gas supply nozzles, exhaust ports, and / or vacuum pump ports, may be provided as needed to maintain the composition and pressure of the low-oxygen environment 29 at predetermined levels.

[0031] The chamber housing 30 may include a first opening and a second opening. A first door 32 may be provided at the first opening in a manner that provides a seal for the volume surrounded by the chamber housing 30. A second door 34 may be provided at the second opening in a manner that provides a seal for the volume surrounded by the chamber housing 30. Suitable door actuation mechanisms may be provided for the first door 32 and the second door 34, such that the first door 32 and the second door 34 can be opened and closed to provide transfer of semiconductor packages and packaging substrates into and out of the chamber housing 30. Although this disclosure is described using an embodiment in which the first door 32 and the second door 34 are located on opposite sides of a low-oxygen environment, embodiments in which the first door 32 and the second door 34 are arranged differently or combined into a single door are expressly contemplated herein.

[0032] A first plasma processing system 50 may be provided in a process chamber. The first plasma processing system 50 includes a first plasma nozzle 51 configured to generate a first plasma in a first plasma region PZ1. A second plasma processing system 60 may be provided in the process chamber. The second plasma processing system 60 includes a second plasma nozzle 61 configured to generate a second plasma P2 in a second plasma region PZ2 (which is a movable plasma region movable with the movement of the second plasma processing system 60). Each of the first plasma processing system 50 and the second plasma processing system 60 may be configured to generate a corresponding atmospheric pressure plasma jet containing ions of a corresponding reducing gas, i.e., a gas capable of binding oxygen atoms to a deoxidized surface. A thermocompression bonding head 40 may be provided in the process chamber. The thermocompression bonding head 40 may be configured to bond a semiconductor package to a package substrate. In other words, the thermocompression bonding head 40 may include all necessary components configured to provide thermocompression bonding between the semiconductor package and the package substrate. Typically, commercially available thermocompression bonding heads can be used.

[0033] A first exemplary apparatus 100 includes various transport systems for moving a second plasma processing system 60, a thermocompression bonding head 40, a plurality of semiconductor packages, and a plurality of package substrates (which may be provided within a wafer). For example, the first transport system (70, 72) may be configured to laterally move the semiconductor packages to a selected package bonding location selected from a plurality of package bonding locations. The second transport system 80 may be configured to move the second plasma processing system 60 to a selected plasma processing location selected from a plurality of plasma processing locations, and may be configured to move the thermocompression bonding head 40 to a selected bonding location selected from a plurality of bonding locations. Additionally, a third transport system 90 may be configured to transport a wafer including a plurality of package substrates to a processing location. When loading the plurality of package substrates, the plurality of package bonding locations may be located above the positions of the respective package substrates.

[0034] In a non-limiting illustrative example, the first transport system (70, 72) may include a first transport path 70 configured to move the package processor 72. The package processor 72 may be configured to grip and release semiconductor packages. A second plasma processing system 60 may be connected to a first movable element (not explicitly shown) on the second transport system 80. A thermocompression joint 40 may be connected to a second movable element (not explicitly shown) on the second transport system 80.

[0035] Typically, the movement of any movable element within the first exemplary device 100 can be controlled by the process controller 300. Furthermore, the operation of all elements within the first exemplary device 100 can be controlled by the process controller 300. For example, the process controller 300 can be configured to control the operation of the first plasma processing system 50, the second plasma processing system 60, and the thermocompression joint 40.

[0036] In one embodiment, the first plasma processing system 50 is fixed, and the first transfer system (70, 72) is configured to transfer the selected semiconductor package to a location near the first plasma processing system 50 before performing the plasma package processing process, and to transfer the selected semiconductor package to a location facing the selected package substrate after performing the plasma package processing process.

[0037] The first exemplary device 100 can be used to form a bonding assembly of multiple semiconductor packages and multiple package substrates. The semiconductor package may consist of a single semiconductor die, or may include a plug-in, with at least one semiconductor die (which may or may not include multiple semiconductor dies) connected to the plug-in. Multiple package substrates may be provided within a wafer. In one embodiment, a wafer including a two-dimensional array of package substrates may be used.

[0038] refer to Figure 2 The first door 32 can be opened. In one embodiment, the environment outside the low-oxygen environment 29 can be controlled to resemble a low-oxygen environment, minimizing disturbances to the composition and pressure of the low-oxygen environment 29. Multiple semiconductor packages 10 can be loaded into the chamber housing 30. In the illustrated example, the multiple semiconductor packages 10 may include a first semiconductor package 101, a second semiconductor package 102, and a third semiconductor package 103. Although this application is described using an embodiment in which three semiconductor packages 10 are loaded into the chamber housing 30, embodiments in which two or more semiconductor packages 10 are loaded into the chamber housing 30 at a time are explicitly contemplated herein. The total number of semiconductor packages 10 loaded into the chamber housing 30 can be from 2 to 10. 13 Within that range, although larger quantities can also be used.

[0039] As used herein, a semiconductor package refers to any of the conventional semiconductor dies used as stand-alone packages, or a composite package including a through-hole and at least one semiconductor die. In one embodiment, one, several, and / or each of the semiconductor packages 10 loaded into the chamber housing 30 may include a respective fan-out package, the fan-out package including at least one semiconductor chip and a through-hole. In one embodiment, the through-hole may include an organic through-hole.

[0040] Multiple encapsulation substrates 20 may be loaded into the chamber housing 30. In the illustrated example, the multiple encapsulation substrates 20 may include a first encapsulation substrate 201, a second encapsulation substrate 202, and a third encapsulation substrate 203. Although this application is described using an embodiment in which three encapsulation substrates 20 are loaded into the chamber housing 30, embodiments in which two or more encapsulation substrates 20 are loaded into the chamber housing 30 at a time are explicitly contemplated herein. The total number of encapsulation substrates 20 loaded into the chamber housing 30 may be from 2 to 10. 13 Within the range, although a larger number can also be used. In one embodiment, the number of packaging substrates 20 loaded into the chamber housing 30 can be the same as the number of semiconductor packages 10 loaded into the chamber housing 30.

[0041] In one embodiment, a plurality of packaging substrates 20 may be provided as part of a wafer 20W. In one embodiment, the wafer 20W may include a two-dimensional array of packaging substrates 20. In the example shown, the wafer 20W includes a first packaging substrate 201, a second packaging substrate 202, and a third packaging substrate 203. Each packaging substrate 20 may be a laterally spaced portion of the wafer 20W.

[0042] In one embodiment, each semiconductor package 10 may include a package-side bonding structure 18, to which a solder material portion 30 is connected. For example, a first semiconductor package 101 may include a first package-side bonding structure 18, to which a first solder material portion 30 is connected; a second semiconductor package 102 may include a second package-side bonding structure 18, to which a second solder material portion 30 is connected; and a third semiconductor package 103 may include a third package-side bonding structure 18, to which a third solder material portion 30 is connected.

[0043] In one embodiment, each packaging substrate 20 may include a substrate-side bonding structure 28. For example, a first packaging substrate 201 may include a first substrate-side bonding structure 28, a second packaging substrate 202 may include a second substrate-side bonding structure 28, and a third packaging substrate 203 may include a third substrate-side bonding structure 28.

[0044] Typically, when the first door 32 is opened, the semiconductor package 10 and the package substrate 20 can be loaded into the process chambers (30, 32, 34). Although this disclosure is described using an embodiment in which the solder material portion 30 is connected to the semiconductor package 10, embodiments in which the solder material portion 30 is connected to the package substrate 20 are expressly contemplated herein.

[0045] refer to Figure 3 After the semiconductor package 10 and the package substrate 20 are loaded into the process chambers (30, 32, 34), the first gate 32 can be closed.

[0046] refer to Figure 4 After closing the first door 32, while sealing the process chambers (30, 32, 34), the first plasma package processing process and the first substrate processing process can be performed simultaneously. The first plasma package processing process removes impurities from the physically exposed surfaces of the first solder material portion 30 and the first package side bonding structure 18. The first plasma substrate processing process removes impurities from the physically exposed surfaces of the first substrate side bonding structure 28.

[0047] Specifically, the first semiconductor package 101 may be positioned such that a first solder material portion 30 of the first semiconductor package 101 faces the plasma nozzle 51 of the first plasma processing system 50. Typically, the first plasma processing system 50 may be any plasma processing system configured to clean the solder material portion or the surface of the bonding structure on the semiconductor package. The plasma nozzle 51 of the first plasma processing system 50 may be a linear plasma nozzle, a matrix plasma nozzle, a circular plasma nozzle, a rectangular plasma nozzle, or a plasma nozzle with an irregular shape.

[0048] The plasma nozzle 51 of the first plasma processing system 50 includes at least one plasma outlet, which may be multiple plasma outlets. During the first plasma package processing process, the vertical distance between the plasma nozzle 51 of the first plasma processing system 50 and the first solder material portion 18 on the first semiconductor package 101 may range from 1 mm to 50 mm, although smaller and larger vertical distances may also be used. The lateral range of the plasma outlet of the plasma nozzle 51 may be smaller than the lateral range of the first solder material portion 30 connected to the first semiconductor package 101. In an illustrative example, the lateral offset distance between the outermost edge of the solder material portion 30 and the closest portion of the plasma outlet of the plasma nozzle 51 may range from 1 mm to 200 mm, although smaller and larger lateral offset distances may also be used.

[0049] The plasma nozzle 61 of the second plasma processing system 60 includes at least one plasma outlet, which may be multiple plasma outlets. During the first plasma substrate processing process, the vertical distance between the plasma nozzle 61 of the second plasma processing system 60 and the first substrate-side bonding structure 28 on the first packaging substrate 201 may range from 1 mm to 60 mm, although smaller and larger vertical distances may also be used. The lateral range of the plasma outlet of the plasma nozzle 61 may be smaller than the lateral range of the first substrate-side bonding structure 28 connected to the first packaging substrate 201. In an illustrative example, the lateral offset distance between the outermost edge of the first substrate-side bonding structure 28 and the closest portion of the plasma outlet of the plasma nozzle 61 may range from 1 mm to 200 mm, although smaller and larger lateral offset distances may also be used.

[0050] A first plasma processing system 50 forms a first plasma P1 around the first solder material portion 18 by generating a first atmospheric pressure plasma jet (APPJ). A second plasma processing system 60 forms a second plasma over the first substrate-side bonding structure 28 on the first packaging substrate 201 by generating a second APPJ jet. Typically, an atmospheric pressure plasma jet (APPJ) can be generated by passing a gas (such as air, argon, or helium) through a high-voltage discharge. The generated plasma consists of highly reactive substances such as ions and free radicals and can be used for various industrial and research applications. In one embodiment of this disclosure, the first APPJ and the second APPJ are used for surface cleaning. Specifically, ions in the first plasma P1 are directed toward the first solder material portion 18 to clean the surface of the first solder material portion 18, and ions in the second plasma P2 are directed toward the first substrate-side bonding structure 28 to clean the surface of the first substrate-side bonding structure 28. The high-energy substances in the plasma interact with the surface, thereby decomposing and removing contaminants on the first solder material portion 18. In one embodiment, the first plasma P1 in the second plasma P uses ions of a reducing gas to reduce and / or remove contaminants (e.g., oxygen or water vapor) on the surfaces of the first solder material portion 18 and the first substrate-side bonding structure 28. The reducing gas is mixed with the corresponding plasmas (P1, P2), and the resulting reactive material is directed toward the surface to be cleaned, thereby effectively reducing and removing contaminants from the surface.

[0051] Exemplary reducing gases that can be used for the first plasma P1 and the second plasma P2 from the first plasma processing system 50 and the second plasma processing system 60 may include, but are not limited to, hydrogen, various hydride gases (e.g., methane, ammonia, acetylene, etc.), carbon monoxide, and various volatile compounds including hydrogen radicals. Hydrogen is a strong reducing agent and can be used to remove oxides, sulfates, and other contaminants from surfaces. Methane is a hydrocarbon gas and can be used to remove carbon-based contaminants from surfaces. Ammonia is a weak reducing agent and can be used to remove nitrides and other nitrogen-based contaminants from surfaces. Carbon dioxide can be used to remove organic contaminants from surfaces. Nitrogen can be used to remove oxygen-based contaminants. Propane is a hydrocarbon gas and can be used to remove carbon-based contaminants from surfaces. In some other embodiments, non-reducing gases such as argon and helium may be optionally used to cool the plasma and / or to protect the plasma jet and improve plasma characteristics. Generally, any ion used as a reducing agent can be used. The atmospheric pressure plasma jet generated by the first plasma processing system 50 and the second plasma processing system 60 does not need to be at "atmospheric" pressure, but can be any pressure known in the art that can be used to generate an atmospheric pressure plasma jet.

[0052] The temperature of the low-oxygen environment 29 in the process chambers (30, 32, 34) is lower than the reflow temperature of the solder material portion 30. The temperature of the low-oxygen environment 29 can be in the range of 10 degrees Celsius to 450 degrees Celsius, and can be in the range of 10 degrees Celsius to 200 degrees Celsius, for example, 10 degrees Celsius to 100 degrees Celsius. Typically, the first plasma package processing process and the first substrate processing process can be performed simultaneously, i.e., during the same processing steps. Therefore, the first substrate processing process can be performed on the first package substrate 201 in the low-oxygen environment 29, while the first plasma package processing process is performed on the first semiconductor package 101 in the low-oxygen environment 29, which has an oxygen partial pressure of less than 17 kPa.

[0053] In a first embodiment, a low-oxygen environment 29 is provided within a process chamber (30, 32, 34) including a chamber housing 30, the chamber housing 30 including a chamber opening and a door 32 configured to mate with the chamber opening. In an embodiment where the first semiconductor package 101 includes a first package-side bonding structure 18, a first solder material portion 30 is connected to the first package-side bonding structure 18, and a first plasma packaging process cleans the first solder material portion 30. In an embodiment where the first package substrate 201 includes a first substrate-side bonding structure 28, a first substrate processing process cleans the first substrate-side bonding structure 28.

[0054] Typically, the process controller 300 includes a processor and a memory that communicates with the processor, and is loaded with a program that simultaneously performs a first plasma packaging process on the first semiconductor package 101 and a first substrate processing process on the first packaging substrate 201 within the wafer 20W.

[0055] refer to Figure 5 The second plasma processing system 60 can move along the first transport path 70 until it faces the second packaging substrate 202. Alternatively, the first transport system (70, 72) can be used to transport the first semiconductor package 101 to a position above the first packaging substrate 201. For example, the package processor 72 can grasp the first semiconductor package 101 and move it along the first transport path 70, positioning the first semiconductor package 101 such that a first solder material portion 30 on the first semiconductor package 101 faces a corresponding one of the first substrate-side bonding structures 28 on the first packaging substrate 201 (which may include bonding pads).

[0056] refer to Figure 6The second semiconductor package 102 can be conveyed to a cleaning position facing the plasma nozzle 51 of the first plasma processing system 50. The thermoforming head 40 can move along a conveying path in the second conveying system 80 and can be positioned above the first semiconductor package 101. Typically, the movement of all mechanical components within the process chambers (30, 32, 34) can be controlled by the process controller 300.

[0057] A first bonding process can be performed using a thermocompression bonding head 40 to bond the first semiconductor package 101 to a first package substrate 201 located in the wafer 20W. First solder material portions 30 can be reflowed during the first bonding process such that each first solder material portion 30 bonds to a corresponding one of the first package-side bonding structures 18 on the first semiconductor package 101 and to a corresponding one of the first substrate-side bonding structures 28 on the first package substrate 201.

[0058] The second plasma encapsulation process and the second substrate processing process can be performed simultaneously with the first bonding process. Typically, the second plasma encapsulation process can begin before, simultaneously with, or after the first bonding process. Similarly, the second plasma substrate processing process can begin before, simultaneously with, or after the first bonding process. Furthermore, the second plasma substrate processing process can begin before, simultaneously with, or after the first plasma encapsulation process. Typically, there is a duration during which the second plasma encapsulation process, the second substrate processing process, and the first bonding process occur simultaneously.

[0059] The second plasma packaging process removes impurities from the second solder material portion 30 and the physically exposed surfaces of the second package side bonding structure 18 located on the second semiconductor package 102. The second plasma substrate process removes impurities from the physically exposed surfaces of the second substrate side bonding structure 28 on the second package substrate 202. The second plasma packaging process is substantially the same as the first plasma packaging process, except that it is implemented on the second semiconductor package 102 instead of the first semiconductor package 101. The second plasma substrate process is substantially the same as the first plasma substrate process, except that it is implemented on the second package substrate 202 instead of the first package substrate 201.

[0060] According to one aspect of this disclosure, the first bonding process, the second plasma package processing process, and the second substrate processing process can be performed simultaneously during the processing steps. Therefore, the second substrate processing process can be performed on the second package substrate 202 simultaneously with the bonding of the first semiconductor package 101 to the first package substrate 201, and the second plasma package processing process can be performed on the second semiconductor package 102 simultaneously. The first semiconductor package 101 is bonded to the first package substrate 201 by reflowing the first solder material portion 30 in a low-oxygen environment 29.

[0061] In one embodiment, the process controller 300 may be configured to simultaneously perform a bonding operation on the combination of the first semiconductor package 101 and the first package substrate 201, a plasma package processing process on the second semiconductor package 102, and a substrate processing process on the second package substrate 202 within the wafer 20W, after simultaneously performing a first plasma package processing process and a first substrate processing process.

[0062] refer to Figure 7 The first bonding process can be completed, and the thermo-pressed bonding head 40 can be moved away from the first bonding assembly of the first semiconductor package 101 and the first package substrate 201, for example, using the second transfer system 80. If necessary, the second plasma package processing process and / or the second substrate processing process can continue while the thermo-pressed bonding head 40 is being moved away from the first bonding assembly.

[0063] refer to Figure 8 The second plasma processing system 60 can move along the first transport path 70 until it faces the third packaging substrate 203. Alternatively, the first transport system (70, 72) can be used to transport the second semiconductor package 102 to a position above the second packaging substrate 202. For example, the package processor 72 can grasp the second semiconductor package 102 and move it along the first transport path 70, positioning the second semiconductor package 102 such that the second solder material portion 30 on the second semiconductor package 102 faces a corresponding one of the second substrate-side bonding structures 28 on the second packaging substrate 202 (which may include bonding pads).

[0064] refer to Figure 9 The third semiconductor package 103 can be conveyed to a cleaning position facing the plasma nozzle 51 of the first plasma processing system 50. The thermoforming head 40 can move along a conveying path in the second conveying system 80 and can be positioned above the second semiconductor package 102. Typically, the movement of all mechanical components within the process chambers (30, 32, 34) can be controlled by the process controller 300.

[0065] A second bonding process can be performed using a thermocompression bonding head 40 to bond the second semiconductor package 102 to a second package substrate 202 located in the wafer 20W. Second solder material portions 30 can be reflowed during the second bonding process such that each second solder material portion 30 bonds to a corresponding one of the second package-side bonding structures 18 on the second semiconductor package 102 and to a corresponding one of the second substrate-side bonding structures 28 on the second package substrate 202.

[0066] The third plasma package processing process and the third substrate processing process can be performed simultaneously with the second bonding process. Typically, the third plasma package processing process can begin before, simultaneously with, or after the second bonding process. Similarly, the third plasma substrate processing process can begin before, simultaneously with, or after the second bonding process. Furthermore, the third plasma substrate processing process can begin before, simultaneously with, or after the second bonding process. Generally, there is a duration during which the third plasma package processing process, the third substrate processing process, and the second bonding process occur simultaneously.

[0067] The third plasma packaging process removes impurities from the physically exposed surfaces of the third solder material portion 30 and the third package side bonding structure 18 located on the third semiconductor package 103. The third plasma substrate process removes impurities from the physically exposed surfaces of the third substrate side bonding structure 28 on the third package substrate 203. The third plasma packaging process can be substantially the same as the first plasma packaging process, except that the third plasma packaging process is implemented on the third semiconductor package 103 instead of the first semiconductor package 101. The third plasma substrate process can be substantially the same as the first plasma substrate process, except that the third plasma substrate process is implemented on the third package substrate 203 instead of the first package substrate 201.

[0068] According to one aspect of this disclosure, the second bonding process, the third plasma package processing process, and the third substrate processing process can be performed simultaneously during the processing steps. Therefore, the third substrate processing process can be performed on the third package substrate 203 simultaneously with the bonding of the second semiconductor package 102 to the second package substrate 202. The second semiconductor package 102 is bonded to the second package substrate 202 by reflowing the second solder material portion 30 in a low-oxygen environment 29.

[0069] In one embodiment, the process controller 300 may be configured to simultaneously perform a bonding operation on the combination of the second semiconductor package 102 and the second package substrate 202, a plasma package processing process on the third semiconductor package 103, and a substrate processing process on the third package substrate 203 within the wafer 20W, after simultaneously performing a first bonding process, a second plasma package processing process, and a second substrate processing process.

[0070] refer to Figure 10 The second bonding process can be completed, and the thermo-pressed bonding head 40 can be moved away from the second bonding assembly of the second semiconductor package 102 and the second packaging substrate 202, for example, using the second transfer system 80. If necessary, the third plasma package processing process and / or the third substrate processing process can continue while the thermo-pressed bonding head 40 is being moved away from the second bonding assembly.

[0071] refer to Figure 11 The second plasma processing system 60 can move along the first transport path 70 away from the third packaging substrate 203. The first transport system (70, 72) can be used to transport the third semiconductor package 103 to a position above the third packaging substrate 203. For example, the package processor 72 can grasp the third semiconductor package 103 and move it along the first transport path 70, and position the third semiconductor package 103 such that the second solder material portion 30 on the third semiconductor package 103 faces a corresponding one of the third substrate-side bonding structures 28 on the third packaging substrate 203 (which may include bonding pads).

[0072] refer to Figure 12 The thermoforming joint 40 can move along the transport path in the second transport system 80 and can be positioned above the third semiconductor package 103. Typically, the movement of all mechanical components within the process chambers (30, 32, 34) can be controlled by the process controller 300.

[0073] A third bonding process can be performed using a thermocompression bonding head 40 to bond the third semiconductor package 103 to a third package substrate 203 located in the wafer 20W. A third solder material portion 30 can be reflowed during the third bonding process, such that each third solder material portion 30 is bonded to a corresponding one of the third package-side bonding structures 18 on the third semiconductor package 103, and to a corresponding one of the third substrate-side bonding structures 28 on the third package substrate 203.

[0074] Typically, each packaging substrate 20 in wafer 20W can be bonded to a corresponding one of the semiconductor packages 10 loaded into process chambers (30, 32, 34).

[0075] refer to Figure 13 The second door 34 of the process chambers (30, 32, 34) can be opened, and the corresponding pairs of components of the semiconductor package 10 and the package substrate 20 can be unloaded from the process chambers (30, 32, 34). In embodiments in which the package substrate 20 is provided as part of the wafer 20W, the two-dimensional array of the semiconductor package 10 and the components of the wafer 20W can be unloaded.

[0076] refer to Figure 14 The second exemplary device 100 according to the second embodiment of this disclosure can be obtained from the first exemplary device 100 by removing the first gate 32 and the second gate 34, and by enabling the semiconductor die 10 to be continuously conveyed to the low-oxygen environment 29. In this embodiment, the packaging substrate 20 can be loaded into the low-oxygen environment 29 in the form of a wafer 20W. The semiconductor package 10 can be conveyed into the low-oxygen environment 29 one after another. Reference Figures 4-13 The described processing steps can be implemented with appropriate modifications to sequentially bond the semiconductor package 10 to a corresponding one of the package substrates 20. Figure 14 The configuration shown corresponds to the reference. Figure 4 The described processing steps. During operation of the second exemplary device 100, the semiconductor package 10 may be sequentially transferred to the low-oxygen environment 29 at different times before the corresponding plasma package processing process on the corresponding semiconductor package 10 begins.

[0077] refer to Figure 15 When bonding the semiconductor package 10 to each packaging substrate 20 on the wafer 20W, the two-dimensional array of the semiconductor package 10 and the bonding assembly of the wafer 20W can be transported out of the low-oxygen environment 29.

[0078] Figure 16 This is a first flowchart illustrating a method 1600 having steps for forming a bonding assembly according to an embodiment of the present disclosure.

[0079] Refer to step 1610 and Figures 1-3 ,and Figure 14 At least a first packaging substrate 201 and a second packaging substrate 202 can be provided in a low-oxygen environment 29 with an oxygen partial pressure of less than 17 kPa.

[0080] Refer to step 1620 and Figures 1-3 , Figure 14 ,and Figure 15 It can provide at least a first semiconductor package 101 and a second semiconductor package 102 in a low-oxygen environment 29.

[0081] Refer to step 1630 and Figure 4 ,and Figure 14 The first substrate processing process can be performed on the first packaging substrate 201 in a low-oxygen environment 29, while the first plasma packaging process can be performed on the first semiconductor package 101 in a low-oxygen environment 29.

[0082] Refer to step 1640 and Figures 5-13 ,and Figure 15 The second substrate processing process can be performed on the second packaging substrate 202 at the same time as the first semiconductor package 101 is bonded to the first packaging substrate 201, and the second plasma package processing process can be performed on the second semiconductor package 102.

[0083] In one embodiment, method 1600 may further include the step of bonding a second semiconductor package 102 to a second package substrate 202 after bonding a first semiconductor package 101 to a first package substrate 201. In one embodiment, method 1600 may further include the steps of: providing a third package substrate 203 in a low-oxygen environment 29; providing a third semiconductor package 103 in the low-oxygen environment 29; and performing a third plasma packaging process on the third semiconductor package 103 and a third substrate processing process on the third package substrate 203 while bonding the second semiconductor package 102 to the second package substrate 202. In one embodiment, the first package substrate 201 and the second package substrate 202 may be laterally spaced portions of a wafer. In one embodiment, the first semiconductor package 101 may include a first package side bonding structure 18, a first solder material portion 30 connected to the first package side bonding structure 18; and a first plasma packaging process cleans the first solder material portion 30. In one embodiment, the first package substrate 201 may include a first substrate side bonding structure 28; and a first substrate processing process cleans the first substrate side bonding structure 28. In one embodiment, the first semiconductor package 101 can be bonded to the first package substrate 201 by reflowing a first solder material portion 30 in a low-oxygen environment 29. In one embodiment, the low-oxygen environment 29 can be provided within a process chamber including a chamber housing 30, the chamber housing 30 including a chamber opening and a door 32 configured to engage with the chamber opening; the first package substrate 201, the second package substrate 202, the first semiconductor package 101, and the second semiconductor package 102 can be loaded into the process chamber while the door 32 is open; and a first plasma package processing process and a first substrate processing process can be performed while the door 32 is closed. In one embodiment, the low-oxygen environment 29 is provided in an apparatus 100 configured to sequentially convey the first semiconductor package 101 and the second semiconductor package 102 above a plasma nozzle 51; the first plasma package processing process can be performed while the first semiconductor package 101 is positioned above the plasma nozzle 51; and after the first plasma package processing process is performed, the second semiconductor package 102 is moved above the plasma nozzle 51. In one embodiment, the first semiconductor package 101 may include a fan-out package, which includes at least one semiconductor chip and a plug-in.

[0084] Figure 17 This is a second flowchart illustrating a method 1700 having steps for forming a bonding assembly according to an embodiment of the present disclosure.

[0085] Refer to step 1710 and Figures 1-3 ,and Figure 14A wafer 20W comprising at least a first packaging substrate 201 and a second packaging substrate 202 can be provided in a low-oxygen environment 29 having an oxygen partial pressure of less than 17 kPa.

[0086] Refer to step 1720 and Figure 4 ,and Figure 14 The first substrate processing process can be performed on the first packaging substrate 201 in a low-oxygen environment 29, while the first plasma packaging process can be performed on the first semiconductor package 101 in a low-oxygen environment 29.

[0087] Refer to step 1730 and Figures 5-13 ,and Figure 15 The second substrate processing process can be performed on the second packaging substrate 202 at the same time as the first semiconductor package 101 is bonded to the first packaging substrate 201, and the second plasma package processing process can be performed on the second semiconductor package 102.

[0088] In one embodiment, method 1700 may further include the step of bonding a second semiconductor package 102 to a second package substrate 202 after bonding a first semiconductor package 101 to a first package substrate 201. In one embodiment, the wafer may include a third package substrate 203; and method 1700 may further include the steps of performing a third plasma packaging process on the third semiconductor package 103 and performing a third substrate processing process on the third package substrate 203 while bonding the second semiconductor package 102 to the second package substrate 202. In one embodiment, the first semiconductor package 101 includes a first package side bonding structure 18, a first solder material portion 30 may be connected to the first package side bonding structure 18; and the first plasma packaging process cleans the first solder material portion 30. In one embodiment, the first package substrate 201 may include a first substrate side bonding structure 28; and the first substrate processing process cleans the first substrate side bonding structure 28, wherein the first semiconductor package 101 may be bonded to the first package substrate 201 by reflowing the first solder material portion 30 in a low-oxygen environment 29.

[0089] Referring to all the accompanying drawings and various embodiments of the present disclosure, an apparatus for forming a bonded assembly can be provided, the apparatus comprising: a process chamber including a chamber housing 30 and an environmental control system configured to provide a low-oxygen environment 29 having an oxygen partial pressure below 17 kPa within a volume spatially defined by the chamber housing; a first plasma processing system 50 located within the process chamber and including a first plasma nozzle 51 and configured to generate a first plasma P1 in a first plasma zone PZ1; and a second plasma processing system 60 located within the process chamber and including a first plasma nozzle 51 configured to generate a first plasma P1 in a first plasma zone PZ1. The system includes a second plasma nozzle 61 that generates a second plasma P2 in a movable second plasma zone PZ2; a thermocompression bonding head 40 configured to bond a semiconductor package 10 to a package substrate 20; a first transport system (70, 72) configured to laterally move the semiconductor package 10 to a selected package bonding location selected from a plurality of package bonding locations; and a second transport system 80 configured to move a second plasma processing system 60 to a selected plasma processing location selected from a plurality of plasma processing locations, and to move the thermocompression bonding head 40 to a selected bonding location selected from a plurality of bonding locations.

[0090] In one embodiment, the apparatus may further include a third transport system 90 configured to transport a wafer comprising a plurality of package substrates 20 to a processing location, wherein the plurality of package bonding locations are located above the positions of respective package substrates selected from the plurality of package substrates 20. In one embodiment, the apparatus may further include a process controller 300 configured to control the operation of a first plasma processing system 50, a second plasma processing system 60, and a thermoforming bonding head 40, wherein the process controller 300 includes a processor and a memory in communication with the processor, and is loaded with a program for simultaneously performing a first plasma package processing process on a first semiconductor package 10 and a first substrate processing process on the first package substrate 20 within the wafer. In one embodiment, the process controller may be configured to simultaneously perform a bonding operation on a combination of the first semiconductor package 101 and the first package substrate 201, a plasma package processing process on a second semiconductor package 102, and a substrate processing process on the second package substrate 202 within the wafer, after simultaneously performing the first plasma package processing process and the first substrate processing process. In one embodiment, the first plasma processing system is fixed, and the first transfer system 70, 72 can be configured to transfer the selected semiconductor package 10 to a location close to the first plasma processing system before performing the plasma package processing process, and to transfer the selected semiconductor package 10 to a location facing the selected package substrate 20 after performing the plasma package processing process.

[0091] Various embodiments of this disclosure can be used to provide parallel processing of at least two pairs of semiconductor packages 10 and package substrates 20. Another pair of semiconductor packages 10 and package substrates 20 can be bonded using the same low-oxygen environment 29 while a plasma processing process is used to clean one pair of semiconductor packages 10 and package substrates 20. Providing in-situ cleaning of the semiconductor packages 10 and package substrates 20 can increase the throughput of the bonding apparatus. In-situ cleaning provides a clean surface for bonding and prevents residue formation at the bonding interface.

[0092] According to embodiments of this application, a method for forming a bonding assembly is provided, the method comprising: providing at least a first packaging substrate and a second packaging substrate in a low-oxygen environment having an oxygen partial pressure below 17 kPa; providing at least a first semiconductor package and a second semiconductor package in the low-oxygen environment; performing a first substrate processing process on the first packaging substrate in the low-oxygen environment, and performing a first plasma packaging process on the first semiconductor package in the low-oxygen environment; and performing a second substrate processing process on the second packaging substrate, and performing a second plasma packaging process on the second semiconductor package while bonding the first semiconductor package to the first packaging substrate. In one or more embodiments, the method for forming a bonding assembly further comprises: bonding the second semiconductor package to the second packaging substrate after bonding the first semiconductor package to the first packaging substrate. In one or more embodiments, the method for forming a bonding assembly further comprises: providing a third packaging substrate in the low-oxygen environment; providing a third semiconductor package in the low-oxygen environment; and performing a third plasma packaging process on the third semiconductor package while bonding the second semiconductor package to the second packaging substrate, and performing a third substrate processing process on the third packaging substrate. In one or more embodiments, the first packaging substrate and the second packaging substrate are laterally spaced portions of a wafer. In one or more embodiments, the first semiconductor package includes a first package-side bonding structure, a first solder material portion being connected to the first package-side bonding structure, and a first plasma packaging process cleaning the first solder material portion. In one or more embodiments, the first packaging substrate includes a first substrate-side bonding structure, and a first substrate processing process cleaning the first substrate-side bonding structure. In one or more embodiments, the first semiconductor package is bonded to the first packaging substrate by reflowing the first solder material portion in a low-oxygen environment. In one or more embodiments, a low-oxygen environment is provided in a process chamber including a chamber housing, the chamber housing including a chamber opening and a door configured to mate with the chamber opening; while the door is open, the first packaging substrate, the second packaging substrate, the first semiconductor package, and the second semiconductor package are loaded into the process chamber; and while the door is closed, the first plasma packaging process and the first substrate processing process are performed. In one or more embodiments, a low-oxygen environment is provided in the apparatus, which is configured to sequentially deliver a first semiconductor package and a second semiconductor package above a plasma nozzle; perform a first plasma package processing process while positioning the first semiconductor package above the plasma nozzle; and move the second semiconductor package above the plasma nozzle after performing the first plasma package processing process. In one or more embodiments, the first semiconductor package includes a fan-out package, which includes at least one semiconductor chip and a plug-in.

[0093] According to another embodiment of this application, a method for forming a bonding assembly is provided, the method comprising: providing a wafer comprising at least a first packaging substrate and a second packaging substrate in a low-oxygen environment having an oxygen partial pressure below 17 kPa; performing a first substrate processing process on the first packaging substrate in the low-oxygen environment, and simultaneously performing a first plasma packaging process on a first semiconductor package in the low-oxygen environment; performing a second substrate processing process on the second packaging substrate, and simultaneously bonding the first semiconductor package to the first packaging substrate, and simultaneously performing a second plasma packaging process on the second semiconductor package. In one or more embodiments, the method for forming a bonding assembly further comprises: bonding a second semiconductor package to the second packaging substrate after bonding the first semiconductor package to the first packaging substrate. In one or more embodiments, the wafer comprises a third packaging substrate; and the method comprises performing a third plasma packaging process on the third semiconductor package, and simultaneously performing a third substrate processing process on the third packaging substrate, while bonding the second semiconductor package to the second packaging substrate. In one or more embodiments, the first semiconductor package comprises a first package side bonding structure, a first solder material portion being connected to the first package side bonding structure; and the first plasma packaging process cleaning the first solder material portion. In one or more embodiments, the first package substrate includes a first substrate-side bonding structure; and a first substrate processing process cleans the first substrate-side bonding structure, wherein the first semiconductor package is bonded to the first package substrate by reflowing a portion of the first solder material in a low-oxygen environment.

[0094] According to another embodiment of this application, an apparatus for forming a bonding assembly is provided, the apparatus comprising: a process chamber including a chamber housing and an environmental control system configured to provide a low-oxygen environment having an oxygen partial pressure below 17 kPa within a volume spatially defined by the chamber housing; a first plasma processing system located within the process chamber and including a first plasma nozzle and configured to generate a first plasma in a first plasma region; a second plasma processing system located within the process chamber and including a second plasma nozzle configured to generate a second plasma; a thermocompression bonding head configured to bond a semiconductor package to a package substrate; a first transfer system configured to laterally move the semiconductor package to a selected package bonding location selected from a plurality of package bonding locations; and a second transfer system configured to move the second plasma processing system to a selected plasma processing location selected from a plurality of plasma processing locations and configured to move the thermocompression bonding head to a selected bonding location selected from a plurality of bonding locations. In one or more embodiments, the apparatus for forming a bonding assembly further includes: a third transport system configured to transport a wafer comprising a plurality of package substrates to a processing location, wherein the plurality of package bonding locations are located above the positions of respective package substrates selected from the plurality of package substrates. In one or more embodiments, the apparatus for forming a bonding assembly further includes: a process controller configured to control the operation of a first plasma processing system, a second plasma processing system, and a thermoforming bonding head, wherein the process controller includes a processor and a memory communicating with the processor, and is loaded with a program for simultaneously performing a first plasma package processing process on a first semiconductor package and a first substrate processing process on a first package substrate within the wafer. In one or more embodiments, the process controller is configured to simultaneously perform a bonding operation on a combination of the first semiconductor package and the first package substrate, a plasma package processing process on a second semiconductor package, and a substrate processing process on a second package substrate within the wafer, after simultaneously performing the first plasma package processing process and the first substrate processing process. In one or more embodiments, the first plasma processing system is fixed, and the first transfer system is configured to transfer the selected semiconductor package to a location near the first plasma processing system before performing the plasma package processing process, and to transfer the selected semiconductor package to a location facing the selected package substrate after performing the plasma package processing process.

[0095] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for performing the same or similar purposes and / or achieving the same or similar advantages as this disclosure. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made without departing from the spirit and scope of this disclosure.

Claims

1. A method of forming a bonding assembly, the method comprising: At least a first packaging substrate and a second packaging substrate are provided in a low-oxygen environment with an oxygen partial pressure of less than 17 kPa. At least a first semiconductor package and a second semiconductor package are provided in the low-oxygen environment; While performing a first substrate processing process on the first packaging substrate using a first plasma processing system in the low-oxygen environment, a first plasma packaging process is performed on the first semiconductor package using a second plasma processing system in the low-oxygen environment. The first plasma processing system is moved from a position above the first packaging substrate to a position above the second packaging substrate; as well as While performing a second substrate processing process on the second packaging substrate using the first plasma processing system, and while bonding the first semiconductor package to the first packaging substrate, a second plasma package processing process is performed on the second semiconductor package using the second plasma processing system.

2. The method according to claim 1, further comprising: After the first semiconductor package is bonded to the first package substrate, the second semiconductor package is bonded to the second package substrate.

3. The method according to claim 2, further comprising: A third encapsulation substrate is provided in the low-oxygen environment; A third semiconductor package is provided in the low-oxygen environment; as well as While bonding the second semiconductor package to the second packaging substrate, a third plasma packaging process is performed on the third semiconductor package, and a third substrate processing process is performed on the third packaging substrate.

4. The method according to claim 1, wherein, The first packaging substrate and the second packaging substrate are laterally spaced portions of the wafer.

5. The method according to claim 1, wherein: The first semiconductor package includes a first package side bonding structure, and a first solder material portion is connected to the first package side bonding structure; and The first plasma encapsulation process cleans the first solder material portion.

6. The method according to claim 5, wherein: The first packaging substrate includes a first substrate-side bonding structure; and The first substrate processing technology cleans the first substrate side bonding structure.

7. The method according to claim 5, wherein, The first semiconductor package is bonded to the first package substrate by reflowing the first solder material portion in the low-oxygen environment.

8. The method according to claim 1, wherein: The low-oxygen environment is provided within a process chamber comprising a chamber housing, the chamber housing including a chamber opening and a door configured to mate with the chamber opening; As the door opens, the first packaging substrate, the second packaging substrate, the first semiconductor package, and the second semiconductor package are loaded into the process chamber. and While the door is closed, the first plasma encapsulation process and the first substrate process are performed.

9. The method according to claim 1, wherein: The low-oxygen environment is provided in the apparatus, which is configured to sequentially deliver the first semiconductor package and the second semiconductor package above a plasma nozzle; While positioning the first semiconductor package above the plasma nozzle, the first plasma package processing technology is performed. and After performing the first plasma package processing, the second semiconductor package is moved above the plasma nozzle.

10. The method according to claim 1, wherein, The first semiconductor package includes a fan-out package, which includes at least one semiconductor chip and a plug-in.

11. A method of forming a mating assembly, the method comprising: A wafer comprising at least a first packaging substrate and a second packaging substrate is provided in a low-oxygen environment having an oxygen partial pressure of less than 17 kPa. While performing a first substrate processing process on the first packaging substrate using a first plasma processing system in the low-oxygen environment, a first plasma packaging process is performed on the first semiconductor package using a second plasma processing system in the low-oxygen environment. The first plasma processing system is moved from a position above the first packaging substrate to a position above the second packaging substrate; and while performing a second substrate processing process on the second packaging substrate using the first plasma processing system, and while bonding the first semiconductor package to the first packaging substrate, a second plasma package processing process is performed on the second semiconductor package using the second plasma processing system.

12. The method of claim 11, further comprising: After the first semiconductor package is bonded to the first package substrate, the second semiconductor package is bonded to the second package substrate.

13. The method according to claim 12, wherein: The wafer includes a third packaging substrate; and The method includes performing a third plasma packaging process on a third semiconductor package while bonding the second semiconductor package to the second packaging substrate, and performing a third substrate processing process on the third packaging substrate.

14. The method of claim 11, wherein: The first semiconductor package includes a first package side bonding structure, and a first solder material portion is connected to the first package side bonding structure; and The first plasma encapsulation process cleans the first solder material portion.

15. The method of claim 14, wherein: The first packaging substrate includes a first substrate-side bonding structure; and The first substrate processing process cleans the first substrate-side bonding structure, wherein the first semiconductor package is bonded to the first package substrate by reflowing the first solder material portion in the low-oxygen environment.

16. An apparatus for forming a mating assembly, the apparatus comprising: A process chamber, including a chamber shell and an environmental control system, the environmental control system being configured to provide a low-oxygen environment with an oxygen partial pressure of less than 17 kPa within a volume spatially defined by the chamber shell; A first plasma processing system is located within the process chamber and includes a first plasma nozzle and is configured to generate a first plasma in a first plasma region; A second plasma processing system is located within the process chamber and includes a second plasma nozzle configured to generate a second plasma. A thermocompression bonding head configured to bond multiple semiconductor packages to multiple package substrates; A first transfer system is configured to laterally move one of the plurality of semiconductor packages to a selected package bonding location selected from a plurality of package bonding locations; as well as The second conveying system is configured to move the second plasma processing system to a selected plasma processing location selected from a plurality of plasma processing locations, and is configured to move the thermo-pressed joint to a selected joint location selected from a plurality of joint locations. The plurality of semiconductor packages include a first semiconductor package and a second semiconductor package, and the plurality of packaging substrates include a first packaging substrate and a second packaging substrate. The process controller is configured to: simultaneously perform a first plasma packaging process on the first semiconductor package and a first substrate processing process on the first packaging substrate; then, move the second plasma processing system from a position above the first packaging substrate to a position above the second packaging substrate, and simultaneously perform a second plasma packaging process on the second semiconductor package using the first plasma processing system and perform a second substrate processing process on the second packaging substrate using the second plasma processing system.

17. The apparatus of claim 16, further comprising: A third transfer system is configured to transfer a wafer including the plurality of packaging substrates to a processing location, wherein the plurality of packaging bonding locations are located above the positions of corresponding packaging substrates selected from the plurality of packaging substrates.

18. The apparatus according to claim 16, wherein, The process controller is configured to control the operation of the first plasma processing system, the second plasma processing system, and the thermo-pressed joint, wherein the process controller includes a processor and a memory communicating with the processor, and is loaded with a program that simultaneously performs the first plasma package processing process on the first semiconductor package and the first substrate processing process on the first package substrate within the wafer.

19. The apparatus according to claim 18, wherein, The process controller is configured to simultaneously perform a bonding operation on the combination of the first semiconductor package and the first package substrate, a second plasma package process on the second semiconductor package, and a second substrate process on the second package substrate within the wafer, after simultaneously performing the first plasma package process and the first substrate process.

20. The apparatus according to claim 16, wherein, The first plasma processing system is stationary, and the first transfer system is configured to transfer a selected semiconductor package to a location close to the first plasma processing system before performing the plasma package processing process, and to transfer the selected semiconductor package to a location facing the selected package substrate after performing the plasma package processing process.

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