A power board and energy storage inverter

Abstract

The application discloses a power board and an energy storage converter. The power board comprises a plurality of topological unit areas, each of which comprises a first long and narrow area extending along a second direction, a second long and narrow area extending along a first direction, and a plurality of device areas; a plurality of switch single tube groups are distributed in the plurality of device areas; the heat dissipation performance of the device area on the first side of the second long and narrow area along the second direction is less than that of the device area on the second side of the second long and narrow area along the second direction; the switch single tube group with a heat quantity lower than a preset threshold in a working state is located in the device area on the first side of the second long and narrow area along the second direction, and the switch single tube group with a heat quantity higher than the preset threshold in the working state is located in the device area on the second side of the second long and narrow area along the second direction. The power board can be built by only using power tube single tubes, and has low cost and good heat dissipation performance.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of circuit, in particular to a power board and a power conversion system. BACKGROUND

[0002] The power conversion system can control the charging and discharging process of the battery, and convert AC and DC. In the case of no power grid, the power conversion system can directly supply power to the AC load. One of the core components of the power conversion system is the power board, which is equipped with a three-phase three-level circuit that can convert the input DC power into AC power. At present, the three-phase three-level circuit is generally realized in a modular scheme, that is, the power tube in the three-level circuit is packaged as a whole module for sale, and then the manufacturer builds the power board using the integrated power tube module. However, due to the limitations and cost of purchase, it is increasingly difficult to purchase and the cost of the integrated power tube module is increasing, which limits the production and development of the power conversion system. SUMMARY

[0003] The present application provides a power board and a power conversion system, which can be built using a single power tube, has good heat dissipation performance, low circuit peak, and is easy to install and drive the board.

[0004] The first aspect of the present application provides a power board, which includes a plurality of topology unit regions, each topology unit region including a first elongated region extending along a second direction and a second elongated region extending along a first direction, the second elongated region penetrating the first elongated region, and the first elongated region and the second elongated region together dividing the topology unit region into a plurality of device regions; the first direction and the second direction intersect; the topology unit region is used to form a multi-level topology, and the multi-level topology includes at least a plurality of switch single tube groups, the plurality of switch single tube groups being distributed in the plurality of device regions; each switch single tube group includes a plurality of transistor single tubes; the heat dissipation performance of the device region on the first side of the second elongated region along the second direction is less than that of the device region on the second side of the second elongated region along the second direction; the switch single tube group with a heat output lower than a preset threshold in a working state is located in the device region on the first side of the second elongated region along the second direction, and the switch single tube group with a heat output higher than the preset threshold in the working state is located in the device region on the second side of the second elongated region along the second direction.

[0005] Thus, the power board can be built using transistor single tubes, reducing the difficulty and cost of procurement. In addition, the heat outputs of the switch single tube groups on both sides of the second elongated region are different, so that the fan can be set close to the switch single tube group with a higher heat output, balancing the temperature of all switch single tube groups and improving the working performance of the power board.

[0006] In some embodiments, the length of the first long region along the second direction is greater than the length of the first long region along the first direction, and the length of the first long region along the second direction is greater than the length of the second long region along the first direction; bus capacitors are arranged at both ends of the first long region along the second direction, and the bus capacitors at the two ends are connected through an in-board trace, which also forms a coupling capacitor; the coupling capacitor is connected in parallel with the bus capacitor, and the coupling capacitor is electrically connected between two switch single tube groups, and the coupling capacitor is used to shorten the commutation path of the switching process from one current loop to another current loop of the multi-level topology.

[0007] Thus, the bus capacitors are arranged at both ends of the first long region, and the space of the first long region is efficiently utilized; on the other hand, since the distance between the two ends of the first long region is relatively long, the overlapping area of the positive and negative bus layers is also relatively large, so that the capacitance of the coupling capacitor formed by the in-board trace is also relatively large, thereby reducing the circuit reverse peak.

[0008] In some embodiments, the second long region is used to place non-driven devices, and the protruding height of the devices in the second long region to the back of the power board is less than a preset threshold.

[0009] Thus, the drive board can be plugged into the back of the second long region, the back space of the second long region is efficiently utilized, and the installation height of the drive board is low.

[0010] In some embodiments, each topology unit region also corresponds to at least one drive board, and the drive board is used to drive a plurality of switch single tube groups; the drive board extends along the first direction, and the drive board covers the back of the second long region along the third direction to be plugged into the back of the power board; the third direction is perpendicular to the first direction and the second direction.

[0011] Thus, since the devices in the middle region of the second long region do not need to be driven and have no protrusion or low protrusion height to the back, the plug-in height of the drive board is also low, the installation is stable, and the signal delay is small.

[0012] In some embodiments, the number of the topology unit areas is 3, and the 3 topology unit areas are arranged in sequence along the first direction, and the 3 topology units form a three-phase multi-level topology; the number of the drive boards is 2; the first drive board continuously extends along the first direction, and the first drive board covers the second long and narrow area in the first topology unit area and covers at least part of the second long and narrow area in the second topology unit area, so as to drive all switch single tube groups in the first phase multi-level topology and part of switch single tube groups in the second phase multi-level topology; the second drive board continuously extends along the first direction, and the second drive board covers at least part of the second long and narrow area in the second topology unit area and the second long and narrow area in the third topology unit area, so as to drive the remaining switch single tube groups in the second phase multi-level topology and all switch single tube groups in the third phase multi-level topology.

[0013] Therefore, for the three-phase multi-level topology, only 2 drive boards are needed to complete the driving, the cost is low, the avoiding hole during installation of the drive board is less and the alignment difficulty is low.

[0014] In some embodiments, each topology unit area also corresponds to 2 drive boards, and each drive board is plugged at the back of the power board; the first drive board and the second drive board both extend along the second direction, the first drive board is located at the third side of the first long and narrow area along the first direction, and the second drive board is located at the fourth side of the first long and narrow area along the first direction; wherein the first drive board is used to drive the switch single tube group located at the third side of the first long and narrow area along the first direction, and the second drive board is used to drive the switch single tube group located at the fourth side of the first long and narrow area along the first direction.

[0015] In some embodiments, the number of the topology unit areas is 3, and the 3 topology unit areas are arranged in sequence along the first direction, and the 3 topology units form a three-phase multi-level topology; the second drive board of the first topology unit area and the first drive board of the second topology unit area are integrated to form an integral drive board, and are located between the first topology unit area and the second topology unit area; the second drive board of the second topology unit area and the first drive board of the third topology unit area are integrated to form an integral drive board, and are located between the second topology unit area and the third topology unit area.

[0016] Therefore, more forms of drive board installation schemes are provided to adapt to different scene requirements.

[0017] In some embodiments, the device area on the first side of the second long and narrow area along the second direction is away from the external fan, and the device area on the second side of the second long and narrow area along the second direction is close to the external fan, so that the heat dissipation performance of the device area on the first side of the second long and narrow area along the second direction is less than the heat dissipation performance of the device area on the second side of the second long and narrow area along the second direction.

[0018] Therefore, the fan is closer to the switch single tube group with high heat generation, thereby balancing the temperature of the switch single tube group and achieving better heat dissipation effect.

[0019] In some embodiments, when the multi-level topology is an I-type three-level topology, the multi-level topology further comprises a diode group; the diode group is located in the middle part of the second long area and / or the first long area along the second direction.

[0020] Therefore, the diode that does not need to be driven is placed in the long area, the space is used efficiently, and the layout is reasonable.

[0021] In some embodiments, the switch single tube group in the device area is arranged in any one of the following patterns: straight line, L type, T type, and rectangle.

[0022] Therefore, various arrangement details of the switch single tube group are provided, and the selection can be better according to the application scenario.

[0023] In some embodiments, the multi-level topology comprises four switch single tube groups, and the four switch single tube groups are located in four device areas one by one; the first device area and the fourth device area are located on the first side of the second long area along the second direction, and the switch single tube groups in the first device area and the fourth device area are arranged in a straight line along the second direction; the second device area and the third device area are located on the second side of the second long area along the second direction, and the switch single tube groups in the second device area and the third device area are arranged in an L type, and the long side of the L type extends along the second direction, and the short side of the L type extends along the first direction, so that the hollow area between the plurality of switch single tube groups further forms the first long area.

[0024] Therefore, an arrangement mode of the switch single tube group in the multi-level topology is provided to enrich the implementation details.

[0025] The second aspect of the present application also provides a power storage converter, which comprises the power board of the first aspect.

[0026] In this way, since the power storage converter comprises the aforementioned power board, it at least has the same advantages as the aforementioned power board.

[0027] In some embodiments, the energy storage converter further comprises a drive board plugged at the back of the power board and a fan, the fan and the power board are jointly installed inside the housing of the energy storage converter; the power board comprises a plurality of topology unit areas, the topology unit area comprises a second long and narrow area extending along a first direction, the heat generation of the switch single tube group distributed along the first side of the second long and narrow area in the second direction in the working state is lower than the heat generation of the switch single tube group distributed along the second side of the second long and narrow area in the second direction in the working state; wherein the fan is close to the second side of the second long and narrow area in the power board in the second direction, and the air of the fan first flows through the second side of the second long and narrow area in the second direction and then flows through the first side of the second long and narrow area in the second direction.

[0028] Therefore, the fan is closer to the switch single tube group with high heat generation, so as to balance the temperature of the switch single tube group and achieve better heat dissipation effect. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 FIG. 1 is a schematic diagram of the back of a power board built by a power tube module.

[0030] Figure 2 FIG. 2 is a schematic diagram of the back of a power board built by a power tube single tube.

[0031] Figure 3 FIG. 3 is a schematic diagram of the front of a power board provided by an embodiment of the present application. Figure 1 .

[0032] Figure 4 FIG. 4 is a schematic diagram of the front of a power board provided by an embodiment of the present application. Figure 2 .

[0033] Figure 5 FIG. 5 is a schematic diagram of the circuit connection of a three-level T-type topology provided by an embodiment of the present application.

[0034] Figure 6 FIG. 6 is a schematic diagram of the circuit connection of a three-level I-type topology provided by an embodiment of the present application.

[0035] Figure 7 FIG. 7 is a schematic diagram of the circuit connection of a five-level topology provided by an embodiment of the present application.

[0036] Figure 8 FIG. 8 is a schematic diagram of the device position relationship of a power board provided by an embodiment of the present application. Figure 1 .

[0037] Figure 9 FIG. 9 is a schematic diagram of the device position relationship of a power board provided by an embodiment of the present application. Figure 2 .

[0038] Figure 10 FIG. 10 is a schematic diagram of the front of a power board provided by an embodiment of the present application.Figure 3 .

[0039] Figure 11 is a back view of a power board provided by an embodiment of the present application Figure 1 .

[0040] Figure 12 is a back view of a power board provided by an embodiment of the present application Figure 2 .

[0041] Figure 13 is a back view of a power board provided by an embodiment of the present application Figure 3 .

[0042] Figure 14 is a back view of a power board provided by an embodiment of the present application Figure 4 .

[0043] Figure 15 is a back view of a power board provided by an embodiment of the present application DETAILED DESCRIPTION

[0044] Hereinafter, a power board and an energy storage inverter according to embodiments of the present application are specifically disclosed with appropriate reference to the accompanying drawings. However, there can be cases where unnecessary detailed description is omitted. For example, there can be cases where detailed description of matters that are well known, repeated description of substantially the same structure, etc. are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided so that those skilled in the art can fully understand the present application, and are not intended to limit the subject matter recited in the claims.

[0045] The ranges disclosed herein are intended to be shorthand for a range of values from the lower limit to the upper limit of the range. The range is defined as being inclusive of the endpoints. Ranges can be expressed as "from about a to about b" or "about a to about b," where a and b are the endpoints of the range. Ranges can be expressed as "from below a to above b" or "from above a to below b" where a and b are the endpoints of the range. Unless specifically stated otherwise, the endpoints of these ranges are not inclusive of the endpoints. Any value or range of values deemed relevant to the scope of the disclosure is encompassed by this disclosure. For example, if a range of 60-120 and a range of 80-110 are listed as exemplary ranges for a particular parameter, it is understood that a range of 60-110 and a range of 80-120 are also contemplated. Furthermore, if a minimum range value of 1 and 2 are listed, and a maximum range value of 3, 4, and 5 are listed, then the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, unless otherwise specified, a numerical range "a-b" indicates a range of values from "a" to "b", where "a" and "b" are both real numbers. For example, the numerical range "0-5" indicates that all real numbers between "0" and "5" have been listed herein, and "0-5" is merely a shorthand for listing all of these values. Also, when a parameter is stated to be an integer ≥ 2, it is equivalent to disclose that the parameter is, for example, integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0046] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions.

[0047] Unless otherwise specified, all technical features and optional technical features of the present application can be combined with each other to form new technical solutions.

[0048] Unless otherwise specified, the terms used in the present application have the commonly understood meanings understood by those skilled in the art.

[0049] Unless otherwise specified, the values of the parameters mentioned in the present application can be measured by various test methods commonly used in the art, for example, can be measured according to the test methods given in the present application.

[0050] It should be noted that the terms "first", "second", "third" involved in the embodiments of the present disclosure are only to distinguish similar objects, and do not represent a specific order of the objects. Understandably, "first", "second", "third" can be interchanged in a specific order or sequence as allowed, so that the embodiments of the present disclosure described herein can be implemented in an order other than that illustrated or described herein.

[0051] Before introducing the embodiments of the present disclosure, the three directions for describing the three-dimensional structure that the plane involved in the embodiments may use are defined. Taking the Cartesian coordinate system as an example, the three directions can include a first direction, a second direction and a third direction.

[0052] Please refer toFigure 1 Fig. 1 provides a structural schematic diagram of a power board 10 built by power tube modules. The power board 10 (also referred to as a power amplifier board) can be applied to at least an energy storage converter, and can realize conversion from direct current to alternating current. The power board 10 can include a top surface (i.e., a front surface) at a front surface and a bottom surface (i.e., a back surface) at a back surface opposite to the front surface, Figure 1 The back surface is mainly shown. In the case of ignoring the flatness of the top surface and the bottom surface, a third direction perpendicular to the top surface and the bottom surface of the power board 10 is defined. On the surface of the power board 10, two directions intersecting (for example, perpendicular) with each other, i.e., a first direction and a second direction, are defined. The power board 10 includes bus bars, various types of capacitors, and three power tube modules 11, each of which is used to form a three-level topology (for example, a three-level T-type topology, a three-level I-type topology, etc.), and the three power tube modules 11 collectively constitute a three-phase three-level topology. Each power tube module 11 includes at least four Insulate-Gate Bipolar Transistors (IGBTs), and the three power tube modules 11, bus bar capacitors, bus bars, and various related components collectively realize conversion from direct current to alternating current.

[0053] However, due to the difficulty in purchasing power tube modules and high cost, the power board is also manufactured by using power tube single tubes. Please refer to Figure 2 Fig. 2 provides a structural schematic diagram of a power board 20 built by power tube single tubes. Figure 2 The power board 20 includes three three-level topologies, and the three three-level topologies collectively constitute a three-phase three-level topology. Each three-level topology is composed of a plurality of IGBT single tubes 21. The three three-level topologies are arranged in a triangular shape. However, the power board 20 built by single tubes has the following disadvantages:

[0054] (1) The power board is at least packaged with a fan, and the fan is located at one side of the power board 20. Air flows through the power board 20 in a vertical direction or a horizontal direction, resulting in low heat dissipation efficiency of the power tubes in the three-level topology far away from the fan; (2) Since the three-level topology occupies a large area, the area occupied by the capacitors is relatively small and concentrated. At this time, the overlapping area of the positive and negative capacitor board layers is small, and the coupling capacitance of the circuit is small, so that the anti-peak of the overall three-level topology circuit is large, which may damage the power tubes; (3) The power board needs to be plugged with a driving board for driving the power tubes on the power board to work. However, since the three-level topology circuit adopts a triangular shape layout, at least three independent driving boards are required, and the installation avoiding holes can be relatively more. Moreover, since the height of the capacitors is high, the installation height of the driving board is also relatively high, and the signal delay is high.

[0055] In an embodiment of the present application, please refer to Figure 3This illustrates a schematic diagram of the device distribution on a power board 30 according to an embodiment of this application. For example... Figure 3 As shown, the power board 30 includes a plurality of topology unit regions 31. Each topology unit region 31 includes a first elongated region 32 extending along a second direction and a second elongated region 33 extending along a first direction. The second elongated region 33 penetrates the first elongated region 32 (or the first elongated region 32 can be considered to penetrate the second elongated region 33). The first elongated region 32 and the second elongated region 33 together divide the topology unit region 31 into multiple device regions. Figure 3 For example, the top left, bottom left, top right, and bottom right of topological unit region 31 are each a device region, for a total of 4 device regions. The first direction and the second direction intersect (they can be perpendicular or not).

[0056] Topology unit region 31 is used to form a multilevel topology, and the multilevel topology includes at least multiple switching transistor groups, which are distributed in multiple device regions; each switching transistor group includes several transistors (or power transistors). The heat dissipation performance of the device region on the first side of the second elongated region 33 along the second direction is less than that of the device region on the second side of the second elongated region 33 along the second direction; switching transistor groups whose heat generation is below a preset threshold under operating conditions are located in the device region on the first side of the second elongated region 33 along the second direction, and switching transistor groups whose heat generation is above the preset threshold under operating conditions are located in the device region on the second side of the second elongated region 33 along the second direction. Here, the preset threshold can be determined according to actual application requirements and specific device parameters.

[0057] Here, a single transistor can also be called a power transistor, and it can be a variety of semiconductor devices, such as an IGBT single transistor.

[0058] It should be noted that the first narrow region 32 and the second narrow region 33 refer to areas without distributed switch single tube groups, but allow the placement of other types of devices.

[0059] like Figure 3 As shown, multiple switch units surround to form a semi-closed U-shaped pattern. The hollow part of the U-shaped pattern is the first elongated region 32, and the second elongated region 33 cuts the U-shaped pattern into upper and lower parts. However, the above is only one layout of the topological unit region 31 and does not constitute a specific limitation. The specific size and shape of the first elongated region 32 and the second elongated region 33 can be selected in various ways, for example... Figure 4 (a) in Figure 4 (c) In addition, the first elongated region 32 or the second elongated region 33 can also be segmented; see [link to relevant documentation]. Figure 4In (d) of FIG. 1, the first narrow region 32 includes two parts, i.e., the first narrow region 32a and the first narrow region 32b, and the two parts can be regarded as the first narrow region 32 as a whole, and the first narrow region 32 as a whole can still be regarded as being penetrated by the second narrow region 33.

[0060] In combination with Figure 3 and Figure 4 It can be known that the number of device regions is not limited, and the switch single tube groups in the device regions can present various arrangement patterns, such as a straight line, an L shape, a T shape, and a rectangle.

[0061] In addition, in Figure 3 or Figure 4 , every 2 transistor single tubes are connected to a buckle, which is collectively identified as 311, and the buckle is only convenient for fixing and mounting, that is, the buckle only provides a positional fixing relationship and does not provide an electrical connection relationship.

[0062] In this way, on the one hand, the switch single tube groups in the topology unit region 31 are all built by transistor single tubes, and there is no need to purchase an integrated power tube module (which forms a multi-level topology as a whole), that is, the present application provides a power board 30 built by transistor single tubes, which reduces the difficulty and cost of purchase; on the other hand, the topology unit region 31 at least includes the first narrow region 32 and the second narrow region 33, and the switch single tube groups on both sides of the second narrow region 33 have different heat generation amounts, so that the fan can be arranged close to the switch single tube group with a higher heat generation amount, so that the heat dissipation efficiency of the switch single tube group with a higher heat generation amount is higher, and the heat dissipation efficiency of the switch single tube group with a lower heat generation amount is lower, which balances the problems of all switch single tube groups and improves the working performance of the overall multi-level topology.

[0063] That is, referring to Figure 10 , the device region on the first side of the second narrow region 33 along the second direction is away from the external fan, and the device region on the second side of the second narrow region 33 along the second direction is close to the external fan, so that the heat dissipation performance of the device region on the first side of the second narrow region 33 along the second direction is less than the heat dissipation performance of the device region on the second side of the second narrow region 33 along the second direction.

[0064] In a specific embodiment, referring to Figure 10For the power board 30 requiring to realize three-phase multi-level topology, three topology unit areas 31a, 31b and 31c are arranged along the first direction, that is, the switch single tube group with lower heat emission in each topology unit area is located at the first side of the second narrow area 33, and the switch single tube group with higher heat emission in each topology unit area is located at the second side of the second narrow area 33. The fan is arranged close to the second side of the second narrow area 33, and the air of the fan flows through the second side of the second narrow area 33 and then flows to the first side of the second narrow area 33, so that the temperature of the switch single tube group of each multi-level topology in the three-phase multi-level topology is balanced, and the overall heat dissipation efficiency is improved.

[0065] Figure 10 In the embodiment, the air of the fan flows along the second direction, but this does not constitute a specific limitation. The air of the fan can also blow to the power board 30 along a third direction.

[0066] It should be noted that the multi-level topology can be a three-level T-type topology, a three-level I-type topology, a five-level topology, a seven-level topology, etc. The transistor with higher heat emission needs to be determined according to the specific circuit connection relationship. The following is only an example.

[0067] Taking the three-level T-type topology as an example, please refer to Figure 5 The multi-level topology 40 at least includes a first switch single tube group 41, a second switch single tube group 42, a third switch single tube group 43 and a fourth switch single tube group 44, and the bus capacitor includes a first bus capacitor 45 and a second bus capacitor 46. The first switch single tube group 41 and the fourth switch single tube group 44 are connected in series to form a vertical pipe bridge arm, the second switch single tube group 42 and the third switch single tube group 43 are connected in series to form a horizontal pipe bridge arm, and the first bus capacitor 45 and the second bus capacitor 46 are connected in series to form a capacitor bridge arm. The common point of the first switch single tube group 41 and the fourth switch single tube group 44 is used as an output point, the common point of the first bus capacitor 45 and the second bus capacitor 46 is used as a midpoint O, the two free ends of the vertical pipe bridge arm are connected in parallel to the two free ends of the capacitor bridge arm, the first end of the horizontal pipe bridge arm is connected to the midpoint O, and the second end is connected to the output point. The two free ends of the capacitor bridge arm are also connected to the positive and negative ends of the power supply.

[0068] At this time, the switch single tube group with higher heat emission refers to the second switch single tube group 42 and the second switch single tube group 43.

[0069] Taking the three-level I-type topology as an example, please refer to Figure 6In the (a) or (b) in the figure, the multi-level topology 40 specifically comprises a first switch single tube group 41, a second switch single tube group 42, a third switch single tube group 43, a fourth switch single tube group 44, a first diode 54, a second diode 52, a first bus capacitor 45 and a second bus capacitor 46; the first switch single tube group 41, the second switch single tube group 42, the third switch single tube group 43 and the fourth switch single tube group 44 are sequentially connected in series to form an I-type bridge arm, the first bus capacitor 45 and the second bus capacitor 46 are connected in series to form a capacitor bridge arm, and the first diode 54 and the second diode 52 are connected in series to form a diode bridge arm, wherein a common point of the first switch single tube group 41 and the second switch single tube group 42 is taken as a first connection point, a common point of the second switch single tube group 42 and the third switch single tube group 43 is taken as an output point, a common point of the third switch single tube group 43 and the fourth switch single tube group 44 is taken as a second connection point, a common point of the first bus capacitor 45 and the second bus capacitor 46 is taken as a midpoint O, two free ends of the I-type bridge arm are connected in parallel with two free ends of the capacitor bridge arm, two free ends of the diode bridge arm are connected with the first connection point and the second connection point respectively, and a common point of the diode bridge arm is connected with the midpoint O.

[0070] At this time, the switch single tube group with higher heat generation refers to the second switch single tube group 42 and the second switch single tube group 43.

[0071] Taking the five-level topology as an example, please refer to Figure 7, the multi-level topology 40 comprises a first switch single tube group 41, a second switch single tube group 42, a third switch single tube group 43, a fourth switch single tube group 44, a fifth switch single tube group 54', a sixth switch single tube group 52', a first diode 57, a second diode 58, a first bus capacitor 45a, a second bus capacitor 45b, a fourth bus capacitor 46a and a third bus capacitor 46a. The first switch single tube group 41 to the fourth switch single tube group 44 are connected in series to form a vertical pipe bridge arm, the fifth switch single tube group 54' and the sixth switch single tube group 52' are connected in series to form a horizontal pipe bridge arm, and the first bus capacitor 45a, the second bus capacitor 45b, the fourth bus capacitor 46a and the third bus capacitor 46a are connected in series to form a capacitor bridge arm. The two free ends of the capacitor bridge arm and the two free ends of the vertical pipe bridge arm are connected in parallel. The common point of the second bus capacitor 45b and the fourth bus capacitor 46b is the midpoint O, one free end of the horizontal pipe bridge arm is connected to the midpoint O, the other free end of the horizontal pipe bridge arm is connected to the common point of the second switch single tube group 42 and the third switch single tube group 43, and the common point of the second switch single tube group 42 and the third switch single tube group 43 forms an alternating current end (i.e. an output point); one end of the first diode 57 is connected to the common point of the first switch single tube group 41 and the second switch single tube group 42, the other end of the first diode 57 is connected to the common point of the first bus capacitor 45a and the third bus capacitor 45b, one end of the second diode 58 is connected to the common point of the third switch single tube group 43 and the fourth switch single tube group 44, and the other end of the second diode 58 is connected to the common end of the fourth bus capacitor 46b and the third bus capacitor 46a.

[0072] At this time, the switch single tube group with a higher heat generation amount refers to the fifth switch single tube group 54' and the sixth switch single tube group 52'.

[0073] The subsequent embodiments of the present application will be described below. Figure 3 The schematic diagram of the overall scheme is shown in the figure, Figure 4 and other possible embodiments can be understood accordingly.

[0074] In some embodiments, referring to Figure 8 , the length of the first long area 32 along the second direction is greater than the length of the first long area 32 along the first direction, and the length of the first long area 32 along the second direction is greater than the length of the second long area 33 along the first direction; the two ends of the first long area 32 along the second direction are respectively distributed with bus capacitors 312a and 312b, and the bus capacitors 312a and 312b are respectively connected to the positive and negative bus layers in the board, so that the wiring in the board also forms a coupling capacitor; wherein the coupling capacitor is connected in parallel with the bus capacitor, and the coupling capacitor is electrically connected between the two switch single tube groups, and the coupling capacitor is used to shorten the commutation path of the switching process from one current loop to another current loop of the multi-level topology.

[0075] Here, the bus capacitor 312a and the bus capacitor 312b can also be capacitors for other purposes.

[0076] It should be noted that the first long area 32 has a relatively long length along the second direction, and the bus capacitor is arranged at both ends of the first long area 32. On the one hand, the space of the first long area 32 can be efficiently utilized. On the other hand, since the distance between the two ends of the first long area 32 is relatively long, the distance between the bus capacitor 312a and the bus capacitor 312b is relatively long. At this time, the overlapping area of the positive bus layer and the negative bus layer is also relatively large, so that the coupling capacitance formed by the in-board wiring has a relatively large capacitance value. The coupling capacitance can reduce the peak and avoid damaging the switch tube in the switching process of the current loop of the multi-level topology.

[0077] It should be understood that Figure 5 In the figure, only the relative positions of the switch single tube group, the bus capacitor, and the first long area 32 are shown, and not the front or back of the power board. In fact, the bus capacitor is generally protruded to the back of the power board 30, and the switch single tube group is generally protruded to the front of the power board 30. Please refer to Figure 10 which shows a schematic diagram of the front structure of the power board 30. Please refer to Figure 12 and Figure 14 which shows a schematic diagram of the back structure of the power board 30.

[0078] From the perspective of circuit connection, the position of the decoupling capacitor can have multiple possibilities, and needs to be arranged according to the specific structure of the multi-level topology. Please refer to Figure 5 In which the decoupling capacitor 47, 48 is connected across the free end of the vertical tube bridge arm and the first end of the horizontal tube bridge arm. Please refer to Figure 6 (b) or (c) in which the decoupling capacitor 47, 48 is connected between the free end of the I-type bridge arm and the common point of the diode bridge arm. Please refer to Figure 7 In which the decoupling capacitor 47, 48 is connected between one end of the horizontal tube bridge arm (away from the vertical tube bridge arm) and the free end of the vertical tube bridge arm.

[0079] In some embodiments, the second long area 33 is used to place non-driven devices, and the protrusion height of the devices in the second long area 33 to the back of the power board 30 is less than a preset threshold.

[0080] It should be noted that for the switch single tube group, the transistor single tube therein needs to be driven, and needs to be plugged into the back of the power board 30 by using an additional driving board, and then the driving signal is output by using the driving board to drive the switch single tube group to work, that is, there is signal exchange between the device with driving demand and the driving board. Conversely, for the non-driven device, it does not need to exchange signals with the driving board, and the non-driven device can be a capacitor, a diode, a bus, etc.

[0081] In this way, since the second narrow region 33 is used to place the non-driven devices which do not need to interact with the driving board, and the protruding height of the devices in the second narrow region 33 to the back of the power board 30 is less than a preset threshold, the driving board can be subsequently placed on the back of the second narrow region 33, and the back space of the second narrow region 33 is efficiently utilized. Here, the preset threshold is a relatively small value, which can be determined according to actual application requirements. For example, the protruding height of the capacitor is considered to be greater than the preset threshold, and the protruding height of the diode and the bus is considered to be less than the preset threshold.

[0082] Please refer to Figure 3 , the number of device regions is 4, and it can be known from Figure 5 and Figure 6 that the three-level T-type topology or the three-level I-type topology each includes four switch single tube groups. In a specific embodiment, please refer to Figure 9 , the number of device regions is 4, and the four switch single tube groups are located in the four device regions one by one. The first device region (where the first switch single tube group 41 is distributed) and the fourth device region (where the fourth switch single tube group 44 is distributed) are located on the first side of the second narrow region 33 along the second direction, and the switch single tube groups in the first device region and the fourth device region are arranged in a straight line along the second direction. The second device region (where the second switch single tube group 42 is distributed) and the third device region (where the third switch single tube group 43 is distributed) are located on the second side of the second narrow region 33 along the second direction, and the switch single tube groups in the second device region and the third device region are arranged in an L shape, and the long side of the L shape extends along the second direction, and the short side of the L shape extends along the first direction, so that the hollow region surrounded by the plurality of switch single tube groups also forms the first narrow region 32, and the whole forms a U-shaped pattern.

[0083] In some embodiments, taking the three-level I-type topology as an example of the multi-level topology, please refer to Figure 6 , the multi-level topology 40 further includes a diode group (the first diode 54 and the second diode 52); please refer to Figure 9 , the diode group is located in the middle part of the second narrow region 33 and / or the first narrow region 32 along the second direction.

[0084] In this way, for the first narrow region 32, the bus capacitor is placed at both ends, and the diode is placed in the middle, so that the utilization rate of the topology unit region 31 is improved, and the diode does not need to be driven and protrudes to the front of the power board 30, so that the back of the diode can be plugged into the driving board.

[0085] The following provides a first setting mode of the driving board.

[0086] Please refer to Figures 11-14 , which shows a schematic view of the back of the power board 30, and the foregoingFigure 3 、 Figure 4 and Figure 10 The front of the power board 30 is shown.

[0087] In some embodiments, as shown in Figure 11 , each topology unit area 31 also corresponds to at least one driving board 50 for driving a plurality of switch single tube groups (i.e. outputting driving signals for each switch single tube group 41-44); the driving board 50 extends along the first direction, and the driving board 50 covers the back of the second narrow area 33 along the third direction to be plugged into the back of the power board 30; wherein the third direction is perpendicular to the first direction and the second direction.

[0088] In this way, on the one hand, the driving board 50 just occupies the back of the second narrow area 33, so that the utilization efficiency of the overall topology unit area 31 is improved, and the avoidance hole is also very small; on the other hand, since the devices in the second narrow area 33 do not need to be driven and have no protrusions or low protrusion height to the back, the plug-in height of the driving board 50 is also low, the installation is stable and the signal delay is small; on the other hand, the driving board 50 is located in the middle of the overall topology unit area 31, and the time for the driving signal to reach each switch single tube group is relatively balanced, so the control uniformity is good.

[0089] In some embodiments, as shown in Figure 10 , the number of topology unit areas 31 is 3, and the three topology unit areas 31 are arranged in sequence along the first direction, and the three topology units form a three-phase multi-level topology, and the overall presents a 3U type distribution.

[0090] Please refer to Figure 12 , the number of driving boards is 2, which are respectively indicated as 50a, 50b; the first driving board 50a extends continuously along the first direction, and the first driving board covers the second narrow area 33 in the first topology unit area 31a and covers at least part of the second narrow area 33 in the second topology unit area 31b to drive all switch single tube groups in the first phase multi-level topology (i.e. switch single tube groups 41-44 in the topology unit area 31a) and part of the switch single tube groups in the second phase multi-level topology (i.e. switch single tube groups 41 and 42 in the topology unit area 31a); the second driving board extends continuously along the first direction, and the second driving board 50b covers at least part of the second narrow area 33 in the second topology unit area 31b and the second narrow area 33 in the third topology unit area 31c to drive the remaining switch single tube groups in the second phase multi-level topology (i.e. switch single tube groups 43 and 44 in the topology unit area 31b) and all switch single tube groups in the third phase multi-level topology (i.e. switch single tube groups 41-44 in the topology unit area 31c).

[0091] Thus, for the three-phase multi-level topology, only two drive boards are needed to complete the driving, the holes are few and the alignment difficulty is low, the drive boards are plugged in the back of the second narrow area, the installation height is low, the plug-in interface can be directly set, the communication line does not need to bypass the switch single tube group that needs to be driven, the signal delay is short and the control is uniform.

[0092] The following provides a setting mode of the second drive board.

[0093] In some embodiments, referring to Figure 13 , each topology unit area 31 also corresponds to two drive boards 51a and 51b, each of which is plugged in the back of the power board 30; the first drive board 51a and the second drive board 51b extend along the second direction, the first drive board 51a is located on the third side of the first narrow area 32 along the first direction, and the second drive board 51b is located on the fourth side of the first narrow area 32 along the first direction; wherein the first drive board 51a is used to drive the switch single tube groups 41 and 42 located on the third side of the first narrow area 32 along the first direction, and the second drive board 51a is used to drive the switch single tube groups 43 and 44 located on the fourth side of the first narrow area along the first direction.

[0094] In some embodiments, referring to Figure 10 , the number of topology unit areas 31 is 3, and the three topology unit areas 31 are arranged in sequence along the first direction, and the three topology units form a three-phase multi-level topology.

[0095] Referring to Figure 14 , the second drive board of the first topology unit area 31a and the first drive board of the second topology unit area 31b are integrated to form an integral drive board (i.e. drive board 51B), and are located between the first topology unit area 31a and the second topology unit area 31b; the second drive board of the second topology unit area 31b and the first drive board of the third topology unit area 31c are integrated to form an integral drive board (i.e. drive board 51C), and are located between the second topology unit area 31b and the third topology unit area 31c.

[0096] That is, in Figure 14In the middle, the driving board 51A corresponds to the driving board 51a of the topology unit area 31a, and is used to drive the switch single tube groups 41 and 42 therein; the driving board 51B integrates the driving board 51b of the topology unit area 31a and the driving board 51a of the topology unit area 31b, and is used to drive the switch single tube groups 43 and 44 of the topology unit area 31a, and the switch single tube groups 41 and 42 of the topology unit area 31b; the driving board 51C integrates the driving board 51b of the topology unit area 31b and the driving board 51a of the topology unit area 31c, and is used to drive the switch single tube groups 43 and 44 of the topology unit area 31b, and the switch single tube groups 41 and 42 of the topology unit area 31b; and the driving board 51D corresponds to the driving board 51b of the topology unit area 31c, and is used to drive the switch single tube groups 43 and 44 therein.

[0097] In this way, although the number of driving boards is large, each driving board covers the switch single tube group to be driven, and the signal wire is relatively short; meanwhile, more forms of driving board mounting schemes are provided, and different scene requirements can be adapted.

[0098] In summary, the embodiment of the present application provides a power tube single tube built power board 30 (or power amplifier board), on the one hand, the topology unit area is built by the switch single tube group composed of the power tube single tube, the pattern formed by the arrangement of the switch single tube group in each topology unit area at least exists the first and second narrow areas which intersect, the switch single tube groups with different heat dissipation amounts are placed on both sides of the second narrow area, and the fan is closer to the switch single tube group with high heat dissipation amount, so that the heat dissipation performance in each topology unit area is uniform; on the other hand, the capacitors are placed at both ends of the first narrow area, so that the overlapping area of the positive and negative capacitor board layers is increased, the capacitance of the coupling capacitor is increased, which is beneficial to reduce the peak and improve the service life of the power tube; in addition, two driving board mounting schemes are provided, for the first driving board mounting scheme (see Figure 12 ), since the capacitors are respectively arranged at both ends of the second narrow area, and the middle area of the second narrow area corresponds to the non-driving device (for example, diode), since the non-driving device does not need to interact with the driving board, the driving board can be arranged in the area, which not only can make the distance from the driving board to each switch single tube group same, but also can reduce the lead length from the connector of the power board to the driving board; meanwhile, the second driving board mounting scheme (see Figure 14 ) can adapt to more scene requirements. In this way, the power board 30 has the advantages of better heat dissipation efficiency of the power tube, lower peak, and better driving board layout.

[0099] In another embodiment of the present application, see Figure 15 , which shows a structure schematic diagram of an energy storage converter 70. As Figure 15As shown, the energy storage converter 70 comprises the aforementioned power board 30, and has at least the same advantages as the power board 30.

[0100] In some embodiments, the energy storage converter 70 further comprises a drive board plugged at the back of the power board 30 and a fan jointly installed inside the housing 71 of the energy storage converter with the power board 30, the fan and the power board being opposite to each other in the third direction so that the air of the fan blows towards the power board; the power board comprises a plurality of topology unit areas 31, each of which comprises a second long and narrow area 33 extending in the first direction, the heat generation of the switch single tube group distributed on the first side of the second long and narrow area 33 in the second direction in the working state being lower than that of the switch single tube group distributed on the second side of the second long and narrow area 33 in the second direction in the working state; wherein the fan is close to the second side of the second long and narrow area 33 in the power board, and the air of the fan flows through the second side of the second long and narrow area 33 in the second direction first and then flows through the first side of the second long and narrow area 33 in the second direction.

[0101] In this way, the switch single tube group with lower heat generation in each topology unit area 31 is located on the first side of the second long and narrow area 33, and the switch single tube group with higher heat generation in each topology unit area 31 is located on the second side of the second long and narrow area 33, the fan is arranged close to the second side of the second long and narrow area 33, and the air of the fan flows through the second side of the second long and narrow area 33 first and then flows to the first side of the second long and narrow area 33, so that the temperature of the switch single tube group of each multi-level topology is relatively balanced, and the heat dissipation efficiency of the power board is improved.

[0102] It should be noted that, Figure 15 Only the possible position of the fan is shown but not limited thereto.

[0103] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are only examples, and embodiments having the same technical idea and playing the same role and effect within the scope of the technical solution of the present application are all included in the technical scope of the present application. In addition, within the scope of the main idea of the present application, various modifications of the embodiments that can be thought of by those skilled in the art, and other ways constructed by combining part of the components of the embodiments are also included in the scope of the present application.

Claims

1. A power strip, comprising: The power board comprises a plurality of topological unit regions, each of which comprises a first elongated region extending along a second direction and a second elongated region extending along a first direction, the second elongated region penetrating the first elongated region, and the first elongated region and the second elongated region jointly divide the topological unit region into a plurality of device regions; the first direction and the second direction intersect; The topological unit region is used to form a multi-level topology, and the multi-level topology comprises at least a plurality of switch single tube groups, and the plurality of switch single tube groups are distributed in the plurality of device regions; each of the switch single tube groups comprises a plurality of transistor single tubes; The heat dissipation performance of the device region on the first side of the second elongated region along the second direction is less than that of the device region on the second side of the second elongated region along the second direction; the switch single tube group with a heat quantity lower than a preset threshold in a working state is located on the first side of the second elongated region along the second direction, and the switch single tube group with a heat quantity higher than the preset threshold in the working state is located on the second side of the second elongated region along the second direction.

2. The power panel of claim 1, wherein, The length of the first elongated region along the second direction is greater than the length of the first elongated region along the first direction, and the length of the first elongated region along the second direction is greater than the length of the second elongated region along the first direction; Bus capacitors are arranged at both ends of the first elongated region along the second direction, and the bus capacitors at both ends are connected through an in-board wire, and the in-board wire also forms a coupling capacitor; The coupling capacitor is connected in parallel with the bus capacitor, and the coupling capacitor is electrically connected between two switch single tube groups, and the coupling capacitor is used to shorten the commutation path of the switching process of a current loop of the multi-level topology to another current loop.

3. The power board of claim 1 or 2, wherein: The second elongated region is used to place driverless devices, and the protrusion height of the devices in the second elongated region to the back surface of the power board is less than a preset threshold.

4. The power strip of claim 3, wherein, Each of the topological unit regions corresponds to at least one driving board, and the driving board is used to drive the plurality of switch single tube groups; The driving board extends along the first direction, and the driving board covers the back surface of the second elongated region along a third direction to be plugged into the back surface of the power board; The third direction is perpendicular to the first direction and the second direction.

5. The power panel of claim 4, wherein, The number of the topological unit regions is three, and the three topological unit regions are arranged in sequence along the first direction, and the three topological unit regions form a three-phase multi-level topology; The number of the driving boards is two; The first driving board continuously extends along the first direction, and the first driving board covers the second elongated region in the first topological unit region and at least part of the second elongated region in the second topological unit region to drive all switch single tube groups in the first-phase multi-level topology and part of the switch single tube groups in the second-phase multi-level topology; The second driving board continuously extends along the first direction, and covers at least part of a second long and narrow region in the second topological unit region and a second long and narrow region in the third topological unit region to drive the remaining switch single tube groups in the second phase multi-level topology and all switch single tube groups in the third phase multi-level topology.

6. The power board according to claim 1 or 2, wherein, Each of the topological unit regions further corresponds to two driving boards, and each of the driving boards is plugged into the back of the power board; The first driving board and the second driving board both extend along the second direction, and the first driving board is located at the third side of the first long and narrow region along the first direction, and the second driving board is located at the fourth side of the first long and narrow region along the first direction; The first driving board is used to drive the switch single tube groups located at the third side of the first long and narrow region along the first direction, and the second driving board is used to drive the switch single tube groups located at the fourth side of the first long and narrow region along the first direction.

7. The power strip of claim 6, wherein, The number of the topological unit regions is 3, and the three topological unit regions are arranged in sequence along the first direction, and the three topological units form a three-phase multi-level topology; The second driving board of the first topological unit region and the first driving board of the second topological unit region are integrated to form an integral driving board, and are located between the first topological unit region and the second topological unit region; The second driving board of the second topological unit region and the first driving board of the third topological unit region are integrated to form an integral driving board, and are located between the second topological unit region and the third topological unit region.

8. The power board according to claim 1, wherein, The device region at the first side of the second long and narrow region along the second direction is far away from the external fan, and the device region at the second side of the second long and narrow region along the second direction is close to the external fan, so that the heat dissipation performance of the device region at the first side of the second long and narrow region along the second direction is less than that of the device region at the second side of the second long and narrow region along the second direction.

9. The power board according to claim 1, wherein, In the case that the multi-level topology is an I-type three-level topology, the multi-level topology further comprises a diode group; The diode group is located at the middle part of the second long and narrow region and / or the first long and narrow region along the second direction.

10. The power board according to claim 1, wherein, The switch single tube groups in the device regions are arranged in any one of the following patterns: straight line, L shape, T shape, rectangle.

11. The power board according to claim 1, wherein, The multi-level topology comprises four switch single tube groups, and the four switch single tube groups are one-to-one corresponding to the four device regions; The first device region and the fourth device region are both located at the first side of the second long and narrow region along the second direction, and the switch single tube groups in the first device region and the fourth device region are both arranged in a straight line along the second direction. The second device region and the third device region are located on the second side of the second narrow region along the second direction, and each of the switch single tube groups in the second device region and the third device region is arranged in an L shape, and the long side of the L shape extends along the second direction, and the short side of the L shape extends along the first direction, so that the hollow regions between the plurality of switch single tube groups also form the first narrow region.

12. An energy storage converter, characterized by The energy storage converter comprises the power board according to any one of claims 1-11.

13. The energy storage converter of claim 12, wherein, The energy storage converter further comprises a drive board and a fan, the drive board is plugged on the back of the power board, and the fan and the power board are jointly installed inside the shell of the energy storage converter. The power board comprises a plurality of topology unit regions, the topology unit regions comprise a second narrow region extending along the first direction, and the heat generation of the switch single tube groups distributed on the first side of the second narrow region along the second direction in the working state is lower than the heat generation of the switch single tube groups distributed on the second side of the second narrow region along the second direction in the working state. The fan is close to the second side of the second narrow region along the second direction in the power board, and the air of the fan first flows through the second side of the second narrow region along the second direction and then flows through the first side of the second narrow region along the second direction.

Images