Gas supply system and chemical vapor deposition apparatus

Abstract

The application discloses a kind of gas supply system and chemical vapor deposition equipment, prevent gas leakage gas supply system including reactant storage device, first box, second box and reactant output pipeline;The reactant storage device is set in the first box, and the pressure in the first box is positive pressure;The first box is set in the second box, and the pressure in the second box is negative pressure;One end of the reactant output pipeline is communicated with the reactant storage device, and the other end of the reactant output pipeline is used as the output end of the gas supply system.The gas supply system of the application adopts "multi-box" structure, by setting internal and external pressure difference, gas leakage can be effectively prevented, and the operation and environmental safety are improved.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition equipment, and more specifically to a gas supply system for preventing gas leakage and a chemical vapor deposition equipment. Background Technology

[0002] Chemical vapor deposition (CVD) is a technology that uses a variety of chemical gases as reactants to carry out chemical reactions in a reaction chamber, depositing products on a target substrate to form a uniform and dense thin film.

[0003] The reactants involved in the chemical vapor deposition process are supplied by a gas supply system. The gas supply system requires strict airtightness; any leakage of reactants can pollute and harm the environment. Some reactants are chemically reactive and pose safety risks such as combustion and explosion upon contact with trace amounts of oxygen or water vapor, endangering the lives of operators. Therefore, the gas supply system must prevent reactant leakage to the outside environment while also preventing oxygen or water vapor from entering the system.

[0004] Some CVD processes use reactants that are liquid at room temperature. The low saturated vapor pressure results in a smaller amount of reactants participating in the CVD process, leading to a decrease in the quality of the final deposited film. For these reactants, preheating is typically used to increase the saturated vapor pressure, thereby increasing the amount of reactant gas transported and improving reaction efficiency to enhance the quality of the deposited film. However, heating increases the diffusion rate of the reactants, further increasing the risk of reactant leakage. Summary of the Invention

[0005] The purpose of this invention is to provide a gas supply system with a "multi-box" structure to prevent raw material gas leakage, reduce environmental pollution, and ensure operational safety.

[0006] To achieve the above objectives, the present invention provides a gas supply system, including a reactant storage device, a first chamber, a second chamber, and a reactant output pipe;

[0007] The reactant storage device is fitted inside the first box, and the pressure inside the first box is positive pressure.

[0008] The first box is fitted inside the second box, and the pressure inside the second box is negative.

[0009] One end of the reactant output pipe is connected to the reactant storage device, and the other end of the reactant output pipe serves as the output end of the gas supply system.

[0010] Optionally, the pressure inside the first chamber is greater than the pressure inside the reactant output pipe located inside the first chamber.

[0011] Optionally, the relative pressure inside the first chamber is 50 to 300 Pa, and the relative pressure inside the second chamber is -50 to -200 Pa.

[0012] Optionally, it also includes a gas delivery pipeline, which is connected to the first housing and is used to continuously deliver gas into the first housing to maintain a positive pressure inside the first housing.

[0013] Optionally, the gas is nitrogen or an inert gas.

[0014] Optionally, it also includes a gas discharge pipe, one end of which is connected to the second housing, and the gas inside the second housing is discharged through the gas discharge pipe to maintain the pressure inside the second housing at a negative pressure.

[0015] Optionally, the gas discharge pipe is equipped with a vacuum pump for extracting gas from the second chamber.

[0016] Optionally, the gas discharge pipe is provided with at least one scrubber, which is used to wash away contaminants in the gas discharged from the gas discharge pipe.

[0017] Optionally, the gas discharge pipe is equipped with a valve to control the gas flow rate of the gas discharge pipe.

[0018] Optionally, the first enclosure is not completely sealed.

[0019] Optionally, the first box has an exhaust vent on its wall, through which gas inside the first box is discharged into the second box.

[0020] Optionally, it also includes a third housing, in which the second housing is fitted, and the pressure inside the third housing is positive pressure.

[0021] Optionally, the relative pressure inside the third chamber is 50–300 Pa.

[0022] Optionally, pressure sensors are installed in the first housing, the second housing, and the third housing, respectively.

[0023] Optionally, alarm devices are installed in the first, second, and third boxes respectively. When the pressure in the first, second, or third box is outside the target range, the corresponding alarm device issues a warning.

[0024] Optionally, the gas supply system further includes a control unit connected to each pressure sensor. The control unit controls the pressure in the first chamber, the second chamber, and the third chamber respectively based on the real-time monitoring data of each pressure sensor.

[0025] Optionally, the reactant storage device includes a heater for heating the raw materials within the reactant storage device.

[0026] Optionally, it also includes a reactant input pipeline, which is connected to the reactant storage device for replenishing raw materials into the reactant storage device.

[0027] Optionally, the output terminal is connected to a reaction chamber used for chemical vapor deposition.

[0028] The present invention also provides a chemical vapor deposition apparatus, comprising a reaction chamber and the aforementioned gas supply system;

[0029] The reaction chamber is connected to the gas supply system, and the reactants are transported to the reaction chamber via the reactant output pipe.

[0030] The beneficial effects of this invention are as follows:

[0031] (1) The gas supply system of the present invention adopts a "dual-box" structure. By setting an internal and external pressure difference, the diffusion path of the gas is effectively controlled to prevent gas leakage or contact with the outside environment. The present invention first places the reactant storage device containing the raw materials inside the first box. The first box is under positive pressure, which is greater than that of the second box. Oxygen and water vapor in the second box are difficult to enter the first box and come into contact with the leaked raw material gas, causing safety accidents such as explosions. Then, the first box is placed inside the second box. The second box is under negative pressure, which is less than that of the external environment. Even if the raw material gas leaks into the second box, it is difficult to leak into the external environment, thus reducing the pollution of the raw material gas to the environment.

[0032] (2) The present invention also provides a gas supply system with a “three-box” structure, wherein the second box is fitted inside the third box, the third box is under positive pressure, and its pressure is greater than that of the second box. The raw material gas that leaks into the second box is difficult to enter the third box, further avoiding the possibility of the raw material gas leaking into the external environment; at the same time, the pressure of the third box is also greater than that of the external environment, and oxygen and water vapor in the air are also difficult to enter the third box.

[0033] (3) The present invention provides a gas delivery pipeline connected to the first box and the third box, and continuously introduces low-activity gases such as nitrogen or inert gas into the first box and the third box to maintain the pressure in the first box and the third box as positive pressure. Moreover, the gas will not react with the raw material gas, which is safe and reliable.

[0034] (4) The present invention is provided with a gas discharge pipe connected to the second box. The gas in the second box is extracted by a vacuum pump on the gas discharge pipe to maintain the pressure in the second box as negative pressure. A scrubber is provided on the gas discharge pipe to wash the pollutants in the gas. The gas is discharged after washing and will not pollute the environment. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the existing gas supply system.

[0036] Figure 2 This is a schematic diagram of a gas supply system provided by the present invention.

[0037] Figure 3 This is a schematic diagram of another gas supply system provided by the present invention.

[0038] Figure 4 This is a schematic diagram of a chemical vapor deposition apparatus provided by the present invention.

[0039] In the diagram, A - reactant storage device, B - reactant output pipe, 1 - first chamber, 10 - first pressure sensor, 2 - second chamber, 20 - second pressure sensor, 3 - third chamber, 4 - reactant storage device, 5 - reactant output pipe, 6 - first gas delivery pipe, 7 - gas discharge pipe, 71 - valve, 72 - suction pump, 73 - scrubber, 8 - reactant input pipe, 9 - third gas delivery pipe, 100 - reaction chamber, 110 - gas supply system, 120 - gas spray head, 130 - substrate carrier assembly. Detailed Implementation

[0040] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0041] In the description of this invention, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0042] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0043] like Figure 1 As shown, the gas supply system of a prior art chemical vapor deposition (CVD) process includes a reactant storage device A for storing raw materials. The reactant storage device A may include a heater (not shown) for heating the raw materials within it. The raw materials are transported in gaseous form to the reaction chamber where the CVD process is performed via a reactant output pipe B connected to the reactant storage device A. Common raw materials include titanium tetrachloride, chlorine, silane, and borane.

[0044] Based on the chemical properties of the raw materials themselves, the gas supply system needs to have good airtightness: on the one hand, some raw material gases are toxic, and it is necessary to prevent the raw material gases from leaking from the gas supply system, thereby polluting and harming the environment; on the other hand, air contains oxygen, and once air enters the gas supply system, even if it only comes into contact with trace amounts of oxygen or water vapor, some raw material gases are at risk of combustion and explosion.

[0045] like Figure 2 As shown, this invention provides a gas supply system to prevent gas leakage, including a reactant storage device 4, a first housing 1, a second housing 2, and a reactant output pipe 5. The reactant storage device 4 is fitted inside the first housing 1, and the pressure inside the first housing 1 is positive. The first housing 1 is fitted inside the second housing 2, and the pressure inside the second housing 2 is negative. One end of the reactant output pipe 5 is connected to the reactant storage device 4, and the reactant output pipe 5 passes sequentially through the walls of the first housing 1 and the second housing 2, delivering the reactant to the outside of the second housing 2.

[0046] The gas supply system provided by this invention sequentially houses the reaction storage device and a portion of the reactant output pipe 5 within a first housing 1 and a second housing 2, forming a "double-housing" structure. The pressure within the inner first housing 1 is positive, preventing air from entering and reducing the likelihood of contact between air and the raw material gas. The pressure within the outer second housing 2 is negative, ensuring that even if the raw material gas leaks from the first housing 1 into the second housing 2, it is difficult for the gas to continue diffusing from the second housing 2 to the outside. Optionally, the relative pressure within the first housing 1 is 50–300 Pa, and the relative pressure within the second housing 2 is -50 to -200 Pa.

[0047] Furthermore, the pressure inside the first chamber 1 is greater than the pressure inside the reactant output pipe 5 located within the first chamber. Therefore, it is also difficult for the raw material gas to leak from the reactant output pipe 5 into the first chamber 1.

[0048] In some embodiments, the gas supply system of the present invention further includes a first gas delivery pipe 6, which is connected to the first housing 1 and is used to continuously deliver gas into the first housing 1. By delivering gas into the first housing 1, the pressure inside the first housing 1 is maintained at a positive pressure, preventing air from entering and facilitating the discharge of oxygen or water vapor from the first housing 1. Optionally, the gas delivered into the first housing 1 is nitrogen or an inert gas. Nitrogen or inert gas has low reactivity; even if a small amount of raw material gas leaks into the first housing 1, the nitrogen or inert gas will not react with the raw material gas, keeping the first housing 1 under nitrogen or inert gas protection, thus fully ensuring the safety of the first housing 1.

[0049] In this embodiment, the first gas delivery pipe 6 continuously supplies gas into the first housing 1 to maintain positive pressure within the first housing 1. Therefore, the first housing 1 should be in a partially sealed state to avoid excessive pressure within it. Optionally, a gap in the opening on the wall of the first housing 1 for connection with other components can be used to connect the first housing 1 and the second housing 2. Optionally, an exhaust port can be additionally provided on the wall of the first housing 1, through which gas within the first housing 1 is discharged into the second housing 2.

[0050] In some embodiments, the gas supply system of the present invention further includes a gas discharge pipe 7, one end of which is connected to the second housing 2. Gas inside the second housing 2 is discharged through the gas discharge pipe 7, maintaining a negative pressure inside the second housing 2. Simultaneously, raw material gas leaking into the second housing 2 can also be discharged through the gas discharge pipe 7, preventing further leakage of raw material gas from the second housing 2 to the outside. Optionally, a vacuum pump 72 is provided on the gas discharge pipe 7 to extract gas from the second housing 2 to maintain a negative pressure inside the second housing 2. In some embodiments, at least one scrubber 73 is provided on the gas discharge pipe 7, which is used to wash away contaminants in the gas discharged from the gas discharge pipe 7. The scrubber 73 can be located upstream of the vacuum pump 72, where contaminants in the gas are washed before entering the vacuum pump 72, reducing contamination of the vacuum pump 72 by contaminants in the gas; the scrubber 73 can also be located downstream of the vacuum pump 72; or scrubbers 73 can be located both upstream and downstream of the vacuum pump 72. In some embodiments, the gas discharge pipe 7 is provided with a valve 71 for controlling the flow rate of the discharged gas.

[0051] In some embodiments, a first pressure sensor 10 is installed on the first housing 1 to detect pressure information inside the first housing 1; a second pressure sensor 20 is installed on the second housing 2 to detect pressure information inside the second housing 2. In some embodiments, alarm devices are respectively installed on the first housing 1 and the second housing 2, and the alarm devices issue a warning when the pressure in the first housing 1 or the second housing 2 is outside the target range.

[0052] In some embodiments, the gas supply system further includes a control unit connected to a first pressure sensor 10, a second pressure sensor 20, a first gas delivery pipe 6, and a gas discharge pipe 7. The control unit controls the gas delivery volume of the first gas delivery pipe 6 based on real-time monitoring data from the first pressure sensor 10 to control the pressure inside the first housing 1; and adjusts the gas discharge volume of the gas discharge pipe 7 based on real-time monitoring data from the second pressure sensor 20 to control the pressure inside the second housing 2.

[0053] In some embodiments, the gas supply system of the present invention further includes a reactant input pipe 8, which is connected to the reactant storage device 4 and is used to replenish raw materials into the reactant storage device 4.

[0054] like Figure 3As shown, in some embodiments, the gas supply system further includes a third housing 3, with the second housing 2 nested inside the third housing 3, and the pressure inside the third housing 3 is positive pressure. In this embodiment, the reaction storage device and part of the reactant output pipeline 5 are sequentially nested inside the first housing 1, the second housing 2, and the third housing 3, forming a "three-housing" structure. The pressure in the third housing 3 is greater than that in the second housing 2, isolating the second housing 2 from the outside environment and making it difficult for gas inside the second housing 2 to leak into the third housing 3, further reducing the possibility of gas leakage. At the same time, the pressure in the third housing 3 is greater than that in the external environment, making it difficult for oxygen, water vapor, etc. in the air to enter the gas supply system from the third housing 3. Optionally, the relative pressure inside the third housing 3 is 50-300 Pa.

[0055] Optionally, a third gas delivery pipe 9 is connected to the third housing 3. The function of the third gas delivery pipe 9 is similar to that of the first gas delivery pipe 6; the third gas delivery pipe 9 continuously delivers gas into the third housing 3, maintaining a positive pressure inside the third housing 3, preventing air from entering, and facilitating the discharge of oxygen or water vapor from the third housing 3. Optionally, to avoid excessive pressure inside the third housing 3, a gap can be used at the opening on the wall of the second housing that connects to other components to connect the third housing 3 and the second housing 2. Alternatively, a through hole can be provided on the wall of the second housing 2.

[0056] In some embodiments, a third pressure sensor 30 is installed on the third housing 3 to detect pressure information within the third housing 3. An alarm device is also installed on the third housing 3, which issues a warning when the pressure in the third housing 3 is outside the target range. The control unit is connected to the third pressure sensor 30 and the third gas delivery pipeline 9. Based on the real-time monitoring data from the third pressure sensor 30, the control unit controls the gas delivery volume of the third gas delivery pipeline 9 to control the pressure within the third housing 3.

[0057] like Figure 4 As shown, the present invention also provides a chemical vapor deposition apparatus, comprising: a reaction chamber 100, a gas spray head 120 disposed at the top of the reaction chamber 100, and a substrate support assembly 130 disposed below the gas spray head 120, with the substrate disposed at the top of the substrate support assembly 130. The gas spray head 120 is connected to a gas supply system 110 for preventing gas leakage provided by the present invention, specifically, it is connected to a reactant output pipe 5 of the gas supply system 110. The gas supply system 110 is used to inject reactants into the reaction chamber 100 to realize the processing of the substrate.

[0058] Example 1

[0059] like Figure 2As shown, the gas supply system of this embodiment includes a reactant storage device 4, a first housing 1, a second housing 2, and a reactant output pipe 5. The gas supply system is connected to the reaction chamber used for chemical vapor deposition. The reactant storage device 4 is housed within the first housing 1, and the first housing 1 is housed within the second housing 2. One end of the reactant output pipe 5 is connected to the reactant storage device 4, and the reactant output pipe 5 passes sequentially through the walls of the first housing 1 and the second housing 2, delivering reactants to the reaction chamber.

[0060] The reactant storage device 4 includes a heater for heating the raw materials inside the reactant storage device 4, so that the raw materials are introduced into the reactant output pipe 5 in gaseous form. The reactant storage device 4 is also connected to a reactant input pipe 8 for replenishing the raw materials into the reactant storage device 4.

[0061] The pressure inside the first chamber 1 is positive pressure, with a relative pressure of 50–300 Pa. A gas delivery pipe 6 is connected to the first chamber 1 to continuously supply nitrogen gas into it, maintaining the pressure inside. A first pressure sensor 10 is installed on the first chamber 1 to detect the pressure information inside it. An alarm device is also installed on the first chamber 1; when the relative pressure inside the first chamber 1 is outside the range of 50–300 Pa, the alarm device issues a warning. The pressure inside the first chamber 1 is greater than the pressure in the reactant output pipe 5 located inside the first chamber. An exhaust port is provided on the wall of the first chamber 1, through which the gas inside the first chamber 1 is discharged into the second chamber 2.

[0062] The pressure inside the second chamber 2 is negative, ranging from -50 to -200 Pa. A gas discharge pipe 7 is connected to the second chamber 2, through which gas is discharged, maintaining the negative pressure inside the second chamber 2. A vacuum pump 72 is installed on the gas discharge pipe 7 to extract gas from the second chamber 2. A scrubber 73 is installed on the gas discharge pipe 7 to wash away contaminants from the discharged gas. A valve 71 is also installed on the gas discharge pipe 7 to control the gas flow rate. In this embodiment, the valve 71, vacuum pump 72, and scrubber 73 are arranged sequentially from upstream to downstream along the gas discharge pipe 7. A second pressure sensor 20 is installed on the second chamber 2 to detect the pressure information inside the second chamber 2. An alarm device is also installed on the second chamber 2; when the pressure inside the second chamber 2 is outside the range of -50 to -200 Pa, the alarm device issues a warning.

[0063] The gas supply system also includes a control unit, which is connected to a first pressure sensor 10, a second pressure sensor 20, a first gas delivery pipe 6, and a gas discharge pipe 7. The control unit controls the gas delivery volume of the first gas delivery pipe 6 based on real-time monitoring data from the first pressure sensor 10, thereby controlling the pressure inside the first housing 1; and adjusts the gas discharge volume of the gas discharge pipe 7 based on real-time monitoring data from the second pressure sensor 20, thereby controlling the pressure inside the second housing 2.

[0064] Example 2

[0065] like Figure 3 As shown, the gas supply system in this embodiment, based on embodiment 1, further includes a third housing 3. A second housing 2 is fitted inside the third housing 3, and the pressure inside the third housing 3 is positive pressure, with a relative pressure of 50-300 Pa. A third gas delivery pipe 9 is connected to the third housing 3 for continuously supplying gas into the third housing 3 to maintain a positive pressure inside. An exhaust port is provided on the wall of the third housing 3, through which the gas inside the third housing 3 is discharged into the external environment.

[0066] A third pressure sensor 30 is installed on the third housing 3 to detect the pressure information inside the third housing 3. An alarm device is also installed on the third housing 3; when the pressure in the third housing 3 is outside the range of 50-300 Pa, the alarm device issues a warning. A control unit is connected to the third pressure sensor 30 and the third gas delivery pipeline 9. Based on the real-time monitoring data from the third pressure sensor 30, the control unit controls the gas delivery volume of the third gas delivery pipeline 9 to control the pressure inside the third housing 3.

[0067] In summary, this invention provides a gas supply system to prevent gas leakage. This system employs a "double-box" structure. First, a reactant storage device containing raw materials is placed inside a first box, which is under positive pressure. Then, the first box is placed inside a second box, which is under negative pressure. By establishing this pressure difference, the gas diffusion path is effectively controlled, preventing gas leakage or contact with the outside environment. This invention also provides a gas supply system with a "triple-box" structure. The second box is placed inside a third box, which is under positive pressure. Raw material gas leaking into the second box is unlikely to enter the third box, further preventing the possibility of raw material gas leaking into the external environment. Simultaneously, the pressure in the third box is also greater than that in the external environment, making it difficult for oxygen and water vapor in the air to enter the third box.

[0068] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas supply system, characterized in that, It includes a reactant storage device, a first chamber, a second chamber, and a reactant output pipeline; The reactant storage device is fitted inside the first box, and the pressure inside the first box is positive pressure. The first box is fitted inside the second box, and the pressure inside the second box is negative. One end of the reactant output pipe is connected to the reactant storage device, and the other end of the reactant output pipe serves as the output end of the gas supply system.

2. The gas supply system as described in claim 1, characterized in that, The reactant output pipe passes through the walls of the first chamber and the second chamber in sequence, and the pressure inside the first chamber is greater than the pressure inside the reactant output pipe inside the first chamber.

3. The gas supply system as described in claim 1, characterized in that, The relative pressure inside the first chamber is 50~300Pa, and the relative pressure inside the second chamber is -50~-200Pa.

4. The gas supply system as described in claim 1, characterized in that, It also includes a gas delivery pipeline, which is connected to the first housing and is used to continuously deliver gas into the first housing to maintain a positive pressure inside the first housing.

5. The gas supply system as described in claim 4, characterized in that, The gas is nitrogen or an inert gas.

6. The gas supply system as described in claim 1, characterized in that, It also includes a gas discharge pipe, one end of which is connected to the second housing. Gas inside the second housing is discharged through the gas discharge pipe to maintain a negative pressure inside the second housing.

7. The gas supply system as described in claim 6, characterized in that, The gas discharge pipe is equipped with a vacuum pump for extracting gas from the second chamber.

8. The gas supply system as described in claim 6, characterized in that, At least one scrubber is provided on the gas discharge pipe, and the scrubber is used to wash away contaminants in the gas discharged from the gas discharge pipe.

9. The gas supply system as described in claim 6, characterized in that, The gas discharge pipe is equipped with a valve to control the gas flow rate.

10. The gas supply system as described in claim 1, characterized in that, The first enclosure is not completely sealed.

11. The gas supply system as described in claim 10, characterized in that, The first box has an exhaust vent on its wall, through which gas inside the first box is discharged into the second box.

12. The gas supply system as described in claim 1, characterized in that, It also includes a third housing, in which the second housing is fitted, and the pressure inside the third housing is positive pressure.

13. The gas supply system as described in claim 12, characterized in that, The relative pressure inside the third chamber is 50~300Pa.

14. The gas supply system as described in claim 12, characterized in that, Pressure sensors are installed in the first box, the second box, and the third box, respectively.

15. The gas supply system as described in claim 14, characterized in that, The first box, the second box, and the third box are each equipped with an alarm device. When the pressure inside the first box, the second box, or the third box is outside the target range, the corresponding alarm device will issue a warning.

16. The gas supply system as described in claim 14, characterized in that, The gas supply system also includes a control unit, which is connected to each pressure sensor. The control unit controls the pressure in the first chamber, the second chamber, and the third chamber respectively based on the real-time monitoring data of each pressure sensor.

17. The gas supply system as described in claim 1, characterized in that, The reactant storage device includes a heater for heating the raw materials within the reactant storage device.

18. The gas supply system as described in claim 1, characterized in that, It also includes a reactant input pipeline, which is connected to the reactant storage device and is used to replenish raw materials into the reactant storage device.

19. The gas supply system as described in claim 1, characterized in that, The output terminal is connected to the reaction chamber used for chemical vapor deposition.

20. A chemical vapor deposition apparatus, characterized in that, It includes a reaction chamber and a gas supply system as described in any one of claims 1-19; The reaction chamber is connected to the gas supply system, and the raw materials in the reactant storage device are transported to the reaction chamber via the reactant output pipe.

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