Control Method and Control System of Semiconductor Heating Device

Abstract

The present invention provides a control method for a semiconductor heating device and a control system for implementing the control method. For the i-th heating zone and the j heating zones adjacent thereto, the control method of the present invention adjusts the temperature of each heating zone at its respective optimal temperature adjustment power through step Sm, and obtains the respective predicted temperature-related parameters of the heated zones corresponding to each heating zone, as well as the respective system delay correction values of each heating zone. Then, through step S(m + n), predictive calculations are performed based on the target temperature-related parameters, the predicted temperature-related parameters of the heated zones corresponding to each heating zone obtained in step Sm, and the respective system delay correction values of each heating zone, such that the prediction of the optimal heating power in the next step is based on the predicted temperature-related parameters predicted in the previous step and the system delay correction values of each heating zone are introduced, significantly shortening the equilibrium time of temperature control and avoiding the problems of long and unstable temperature stabilization time caused by system response delay.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and particularly to a control method and a control system for a semiconductor heating device. Background Art

[0002] The chemical vapor deposition process is a process of coating a substrate with a process gas through physical or chemical reactions at a certain temperature and pressure. In the prior art, a chemical vapor deposition device heats a pedestal for carrying a substrate through a heating device, and heats the substrate through heat transfer from the pedestal to the substrate.

[0003] To ensure uniform temperature everywhere on the substrate or ensure uniform temperature of different substrates, the heating device is usually controlled in zones, that is, the host computer drives the temperature control unit to perform heating control on each heating zone of the heating device respectively, and the temperature measurement unit obtains and feeds back the temperature condition of the corresponding heated zone to the host computer, so that the host computer drives the temperature control unit to adjust the heating power of each heating zone in real time.

[0004] Ideally, it is hoped that the time delay in the response interaction between the host computer, the temperature control unit, the heating device, and the temperature measurement unit should be very short or even no time delay, so that the controlled quantity can be controlled in time. However, the actual situation is that there is a time delay between the heating device starting to generate heat in response to the drive control of the temperature control unit and the temperature control unit sending a drive instruction to the heating device, and the time delay between the temperature control unit responding to the control instruction of the host computer and the host computer sending a control instruction. This makes the temperature control performed by the host computer ahead of the actual temperature response of the heating device, so that the controlled quantity cannot be controlled in time. The temperature control performed by the host computer according to the controlled quantity information fed back by the temperature measurement unit is significantly lagged, which makes the heating device prone to overshoot and the system has a long stabilization time and poor stability. This will also affect the heated object, such as the quality of the thin film deposited on the substrate. Summary of the Invention

[0005] The present invention provides a control method and a control system for a semiconductor heating device to alleviate or avoid the situation of long temperature stabilization time and poor stability.

[0006] The present invention provides a semiconductor device including a semiconductor heating device and a device to be heated. The semiconductor heating device includes at least three heating zones for generating heat, where the i-th heating zone is adjacent to the remaining j heating zones, j is a positive integer greater than or equal to 2, the i-th heating zone transfers heat to the i-th heated zone corresponding to the device to be heated, and the j heating zones respectively transfer heat to the j heated zones corresponding to the device to be heated.

[0007] To achieve the above object, taking the i-th heating zone as an example, the heating control method for the i-th heating zone includes the following steps:

[0008] S0: Obtain target temperature-related parameters including the target temperature Tset, and control the semiconductor heating device to raise the temperature of the ith heating zone and the jth heating zone;

[0009] Si: According to the target temperature-related parameters and the currently obtained temperature-related parameters of the ith heated zone and the jth heated zone respectively, perform the mth prediction calculation for the mth temperature adjustment process to obtain the mth optimal temperature adjustment power of each of the ith heating zone and the jth heating zone, and the mth predicted temperature-related parameters of each of the ith heated zone and the jth heated zone;

[0010] Control the semiconductor heating device to perform the mth temperature adjustment process for each of the ith heating zone and the jth heating zone at their respective mth optimal temperature adjustment powers;

[0011] Obtain and perform correction calculation according to the time when the power control instruction corresponding to the mth optimal temperature adjustment power of each of the ith heating zone and the jth heating zone is issued, and the real-time temperature-time correspondence relationship of each of the ith heated zone and the jth heated zone to obtain the system delay correction value of each of the ith heating zone and the jth heating zone;

[0012] S(m + n): According to the target temperature-related parameters, the mth predicted temperature-related parameters of each of the ith heated zone and the jth heated zone in step Sm, and the system delay correction values of each of the ith heating zone and the jth heating zone, perform the (m + n)th prediction calculation for the (m + n)th temperature adjustment process to obtain the (m + n)th optimal temperature adjustment power of each of the ith heating zone and the jth heating zone, and the (m + n)th predicted temperature-related parameters of each of the ith heated zone and the jth heated zone, and control the semiconductor heating device to perform the (m + n)th temperature adjustment process for the ith heating zone and the jth heating zone at their respective (m + n)th optimal temperature adjustment powers;

[0013] Repeat step (m + n) until the ith heated zone and the jth heated zone reach the target temperature respectively, where n is a positive integer greater than or equal to 1 and takes values in sequence.

[0014] Optionally, in step S0, the target temperature-related parameters further include: the target power P set corresponding to the target temperature T set ;

[0015] In the step Sm, the current temperature-related parameters of each of the i-th heated zone and the j-th heated zone include the current temperature T of the i-th heated zone i0 and the corresponding current power P i0 , and the current temperature T of each of the j-th heated zones j0 and the corresponding current power P j0 .

[0016] Optionally, in the step Sm, the steps of performing the m-th prediction calculation to obtain the m-th predicted temperature-related parameters of each of the i-th heated zone and the j-th heated zone include:

[0017] According to the current temperature T of the i-th heated zone i0 and the corresponding current power P i0 , and the current temperature T of each of the j-th heated zones j0 perform calculations to obtain the predicted temperature T of the i-th heated zone im and the corresponding predicted power P im ;

[0018] According to the current temperature T of each of the j-th heated zones j0 and the corresponding current power P j0 , and the current temperature T of the i-th heated zone i0 perform calculations to obtain the predicted temperature T of each of the j-th heated zones jm and the corresponding predicted power P jm .

[0019] Optionally,

[0020] where α is a temperature adjustment rate-related coefficient, k ij is the heat conduction coefficient, and σ is the Stefan-Boltzmann constant.

[0021] Optionally, in the step S m the steps of performing the m-th prediction calculation to obtain the m-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone include:

[0022] According to the target temperature T set , the target power P set , the current temperature T of the i-th heated zone i0 and the corresponding current power P i0 perform calculations to obtain the m-th cost function C corresponding to the i-th heating zone im , and then for the m-th cost function C amMinimize to obtain the m-th optimal temperature control power \(P\) of the \(i\)-th heating zone opt-im ;

[0023] According to the target temperature \(T\) set , the target power \(P\) set , the current temperature \(T\) of each of the \(j\) heated zones j0 and the corresponding current power \(P\) j0 Perform calculations to obtain the m-th cost function \(C\) corresponding to each of the \(j\) heating zones jm , and then minimize the m-th cost function \(C\) jm to obtain the m-th optimal temperature control power \(P\) of each of the \(j\) heating zones opt-jm .

[0024] Optionally, \(C\) im =(T a0 - T set ) 2 +(P a0 - P set ) 2 , \(P\) opt-im = argmin \(C\) im ;

[0025] \(C\) jm =(T b0 - T set ) 2 +(P b0 - P set ) 2 , \(P\) opt-jm = argmin \(C\) jm .

[0026] Optionally, in step S(m + n), the step of performing the (m + n)-th prediction calculation to obtain the (m + n)-th predicted temperature related parameters of each of the \(i\)-th heated zone and the \(j\) heated zones includes:

[0027] According to the predicted temperature \(T\) of the \(i\)-th heated zone im and the corresponding predicted power \(P\) im , the predicted temperature \(T\) of each of the \(j\) heated zones jm and the system delay correction value \(D\) of the \(i\)-th heating zone si perform calculations to obtain the predicted temperature \(T\) of the \(i\)-th heated zone i(m+n) and the corresponding predicted power \(P\) i(m+n) ;

[0028] According to the predicted temperature \(T\) of each of the \(j\) heated zones jm and the corresponding predicted power \(P\)jm , the predicted temperature T of the i-th heated zone im and the system delay correction value D of each heated zone in the j-th heating zone sj are calculated to obtain the predicted temperature T of each heated zone in the j-th heating zone j(m+n) and the corresponding predicted power P j(m+n) .

[0029] Optionally,

[0030] where α is the temperature adjustment rate correlation coefficient, k ij is the thermal conductivity, and σ is the Stefan-Boltzmann constant.

[0031] Optionally, in the step S(m + n), the step of performing the (m + n)-th prediction calculation to obtain the (m + n)-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zones includes:

[0032] According to the target temperature T set , the target power P set , the predicted temperature T of the i-th heated zone im and the corresponding predicted power P im are calculated to obtain the (m + n)-th cost function C corresponding to the i-th heating zone i(m+n) , and then the (m + n)-th cost function C i(m+n) is minimized to obtain the (m + n)-th optimal heating power P of the i-th heating zone opt-i(m+n) ;

[0033] According to the target temperature T set , the target power P set , the predicted temperatures T of the j heated zones jm and the corresponding predicted powers P jm are calculated to obtain the (m + n)-th cost function C corresponding to the j-th heating zones j(m+n) , and then the (m + n)-th cost function C j(m+n) is minimized to obtain the (m + n)-th optimal heating power P of each of the j-th heating zones opt-j(m+n) .

[0034] Optionally, C i(m+n) =(T im -T set ) 2 +(P im -P set ) 2 , P opt-i(m+n) = argmin Ci(m+n) ;

[0035] C j(m+n) =(T jm -T set ) 2 +(P jm -P set ) 2 , P opt-i(m+n) = argmin C j(m+n) .

[0036] Optionally, the control instruction corresponding to the m-th optimal temperature control power of the i-th heating zone is the first power control instruction, and the control instruction corresponding to the m-th optimal temperature control power of one heating zone among the j heating zones is the second power control instruction. In the step Sm, the step of performing correction calculation to obtain the system delay correction value of each of the i-th heating zone and each heating zone among the j heating zones includes:

[0037] Obtain and according to the issuance time t mj ; the real-time temperature-time correspondence relationship of the i-th heated zone, to obtain the temperature T m corresponding to the issuance time t si ;

[0038] Obtain and according to the issuance time t mj of the second power control instruction, and the real-time temperature-time correspondence relationship of the heated zone corresponding to one heating zone among the j heating zones, to obtain the temperature T mj corresponding to the issuance time t sj of the heated zone;

[0039] Calculate according to T si and T sj to obtain the system delay correction value D si of the i-th heating zone, and to obtain the system delay correction value D sj of each of the j heating zones.

[0040] Optionally,

[0041] where k ij is the thermal conductivity coefficient and σ is the Stefan-Boltzmann constant.

[0042] Optionally, the step S0 further includes controlling the semiconductor heating device to perform an initial temperature adjustment process to adjust the temperature of the i-th heating zone and the j heating zones, and obtaining the current temperature-related parameters of each of the i-th heated zone and the j heated zones.

[0043] Optionally, the control instruction corresponding to the m-th optimal temperature control power of the i-th heating zone is the first power control instruction, and the control instruction corresponding to the m-th optimal temperature control power of one of the j heating zones is the second power control instruction; in the step Sm, the step of performing correction calculation to obtain the system delay correction value of each of the i-th heating zone and the j heating zones includes:

[0044] Obtain and based on the issuance time t of the first power control instruction pim , the real-time temperature-time correspondence of the i-th heated zone, and the trend mutation time t' at which the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the real-time temperature-time correspondence of the i-th heated zone pmi , to obtain the system delay correction value D of the i-th heating zone si ;

[0045] Obtain and based on the issuance time t of the second power control instruction pjm , the real-time temperature-time correspondence of one of the j heated zones, and the trend mutation time t' at which the temperature adjustment rate first undergoes a trend mutation in the real-time temperature-time correspondence of one of the j heated zones pjm , to obtain the system delay correction value D of each of the j heating zones sj .

[0046] Optionally,

[0047]

[0048] wherein, in the real-time temperature-time correspondence of the i-th heated zone, the m-th temperature adjustment process ends at t' im moment, and the temperature value corresponding to the time node after subtracting the duration of Δt im from the t' dely-im moment is T dim , Δt dely-im =(t' pim -t pim );

[0049] In the real-time temperature-time correspondence of one of the j heated zones, the m-th temperature adjustment process ends at t' jm moment, and the temperature value corresponding to the time node after a duration of Δt jm from the t' dely-jm moment is T sjm , Δt dely-jm =t' pjm -t pjm。

[0050] The present application also provides a control system for a semiconductor heating device, where the semiconductor heating device includes at least three heating zones for generating heat. The i-th heating zone is adjacent to the remaining j heating zones, and j is a positive integer greater than or equal to 2. The control system is configured to execute the control method of the semiconductor heating device to separately control the i-th heating zone and each of the j heating zones.

[0051] As described above, both the control method and the control system of the semiconductor heating device of the present invention have the following beneficial effects:

[0052] In the control method of the semiconductor heating device of the present invention, the m-th optimal heating-up power of the i-th heating zone and the j heating zones is obtained through the step Sm to perform the m-th heating-up process. And the step S(m + n) performs predictive calculations based on the target temperature-related parameters, the predictive temperature-related parameters in the step Sm, and the system delay correction values of the i-th heating zone and each of the j heating zones, such that the prediction of the optimal heating-up power in the next step is all based on the predictive temperature-related parameters predicted in the previous step. Compared with predicting the optimal heating-up power based on the real-time temperature-related parameters of the previous step, the balance time of temperature control is significantly shortened. Moreover, the predictive calculation of the step S(m + n) introduces the system delay correction values of each heating zone obtained in the step Sm, avoiding the problems of long and unstable temperature stabilization time caused by system response delay during the execution of S(m + n). BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 It shows a schematic structural diagram of the chemical vapor deposition equipment of the present application.

[0054] Figure 2 It shows a schematic flow diagram of the control method of the semiconductor heating device of the present application.

[0055] Figure 3 It shows a schematic functional module diagram of a semiconductor heating device with two partitions.

[0056] Figure 4a and Figure 4b and Figure 5a and Figure 5b It shows a schematic partition structure diagram of the semiconductor heating device and the device to be heated in the control method of the semiconductor heating device provided in the second embodiment of the present invention.

[0057] Figure 6 It shows a corresponding relationship diagram of the real-time temperature and time of the heated zone.

[0058] Figure 7a and Figure 7b andFigure 8a and Figure 8b It shows a schematic diagram of the partition structure of the semiconductor heating device and the device to be heated in the control method of the semiconductor heating device provided in the fourth embodiment of the present invention.

[0059] Figure 9a and Figure 9b It shows a schematic diagram of the partition of the semiconductor heating device and the device to be heated in the control method of the semiconductor heating device provided in the fifth embodiment. Specific Embodiments

[0060] The following uses specific specific examples to illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0061] On the one hand, the present invention provides a semiconductor device, which includes a heating device and a device to be heated. The semiconductor device is a chemical vapor deposition device, the heating device is the heating device in the chemical vapor deposition device, and the device to be heated can be a susceptor for carrying a substrate in the chemical vapor deposition device. The functions of the heating device can include, but are not limited to, heating the susceptor, heating the process chamber wall, heating the spray device, heating the inlet gas pipeline, heating the outlet gas pipeline, etc., so as to be able to perform zoned heating control on the object to be heated.

[0062] The chemical vapor deposition device can be a Chemical Vapor Deposition (CVD) device or a Physical Vapor Deposition (PVD) device. The CVD device can be a Plasma Enhanced Chemical Vapor Deposition (PECVD) device, a Metal-organic Chemical Vapor Deposition (MOCVD) device, an Atmospheric Pressure Chemical Vapor Deposition (APCVD) device, etc.; the PVD device can be a Vacuum Evaporation device, a Sputtering device, an Ion Plating device, etc.

[0063] In the specific embodiments of the present invention, a chemical vapor deposition apparatus is taken as an example for illustration. It should be understood that this apparatus is merely exemplary, and the present invention is not limited to this kind of apparatus. As Figure 1 shown, the chemical vapor deposition apparatus includes a process chamber 1, a susceptor 2 disposed in the process chamber 1 for carrying a substrate 4, a semiconductor heating device 3 is provided below the susceptor 2, and the susceptor 2 is the heated device exemplified in this embodiment. The semiconductor heating device 3 has two or three or more adjacent heating zones. Correspondingly, the susceptor 2 has respective heated zones corresponding to the heating zones of the semiconductor heating device 3. The cross-section of the process chamber 1 is generally a circular or quasi-circular structure, or it can be a rectangular structure and other structures well-known to those skilled in the art, which will not be elaborated here. In this embodiment, a process chamber with a circular cross-section is taken as an example, and the cross-sections of the susceptor 2 and the heating device 3 therein are both circular structures. The control method provided in this application is to separately control each heating zone of the semiconductor heating device 3 to control the heat generation of each heating zone, so that each heated zone of the susceptor 2 is heated.

[0064] For a semiconductor heating device with two zones, or for a case where there are two adjacent zones in the semiconductor heating device and each zone is not adjacent to other zones, the semiconductor heating device includes adjacent first heating zone and second heating zone, and the first heating zone and the second heating zone generate heat to transfer heat to the adjacent first heated zone and second heated zone of the heated device respectively. The heating control method of the semiconductor heating device of this application includes the following steps:

[0065] S0: Obtain target temperature-related parameters including the target temperature T set therein, and control the semiconductor heating device to make the first heating zone and the second heating zone generate heat;

[0066] Sm: Perform the m-th prediction calculation on the m-th temperature adjustment process according to the target temperature-related parameters and the currently obtained temperature-related parameters of the first heated zone and the second heated zone respectively, to obtain the respective m-th optimal temperature adjustment powers of the first heating zone and the second heating zone, and the respective m-th predicted temperature-related parameters of the first heated zone and the second heated zone;

[0067] Control the first heating zone and the second heating zone to perform the m-th temperature adjustment process with their respective m-th optimal temperature adjustment powers;

[0068] Obtain and perform correction calculation according to the time when the control instructions corresponding to the respective m-th optimal temperature adjustment powers of the first heating zone and the second heating zone are issued, and the real-time temperature and time correspondence relationship of the first heated zone and the second heated zone respectively, to obtain the respective system delay correction values of the first heating zone and the second heating zone;

[0069] S(m + n): Based on the target temperature - related parameters, the m - th predicted temperature - related parameters of the first heated zone and the second heated zone in the step Sm, and the system delay correction values of the first heating zone and the second heating zone respectively, perform the (m + n) - th prediction calculation for the (m + n) - th temperature - adjustment process, obtain the (m + n) - th optimal temperature - adjustment power of the first heating zone and the second heating zone respectively, and the (m + n) - th predicted temperature - related parameters of the first heated zone and the second heated zone respectively. Control the semiconductor heating device through the (m + n) - th power control instruction to make the first heating zone and the second heating zone perform the (m + n) - th temperature - adjustment process with their respective (m + n) - th optimal temperature - adjustment powers;

[0070] Repeat the step (m + n) until the first heated zone and the second heated zone reach the target temperature respectively. n is a positive integer greater than or equal to 1 and takes values in sequence.

[0071] For a heating device with three or more zones, where the i - th heating zone is adjacent to the remaining j heating zones, j is a positive integer greater than or equal to 2. The i - th heating zone transfers heat to the i - th heated zone corresponding to the device to be heated, and the j heating zones transfer heat to the j heated zones corresponding to the device to be heated one - to - one respectively.

[0072] This application provides a heating control method for the i - th heating zone. Refer to Figure 2 , including the following steps:

[0073] S0: Obtain the target temperature - related parameters including the target temperature T set and control the semiconductor heating device to raise the temperature of the i - th heating zone and the j heating zones.

[0074] Sm: Based on the target temperature - related parameters and the currently obtained temperature - related parameters of each of the i - th heated zone and the j heated zones, perform a prediction calculation, control each of the i - th heating zone and the j heating zones to adjust the temperature with their respective optimal temperature - adjustment powers, obtain the m - th predicted temperature - related parameters of each heated zone, and perform a correction calculation to obtain the system delay correction values of each heating zone.

[0075] S(m + n): Based on the target temperature - related parameters, the m - th predicted temperature - related parameters of each heated zone obtained in the step Sm, and the system delay correction values of each heating zone, perform the (m + n) - th prediction calculation for the (m + n) - th temperature - raising process to control each heating zone to adjust the temperature with its respective optimal temperature - adjustment power, and obtain the (m + n) - th predicted temperature - related parameters of each heated zone.

[0076] Repeat the execution of the step (m + n) until the i-th heated zone and the j-th heated zone each reach the target temperature, where n is a positive integer greater than or equal to 1 and takes sequential values.

[0077] Among them, step Sm includes:

[0078] According to the target temperature-related parameters, and the current temperature-related parameters of each of the i-th heated zone and the j-th heated zone obtained, perform the m-th prediction calculation for the m-th temperature adjustment process, to obtain the m-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone, and the m-th predicted temperature-related parameters of each of the i-th heated zone and the j-th heated zone;

[0079] Control the semiconductor heating device to make each of the i-th heating zone and the j-th heating zone perform the m-th temperature adjustment process with its respective m-th optimal temperature adjustment power;

[0080] Obtain and perform correction calculation according to the time when the power control instruction corresponding to the m-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone is issued, and the real-time temperature and time correspondence relationship of each of the i-th heated zone and the j-th heated zone, to obtain the system delay correction value of each of the i-th heating zone and the j-th heating zone.

[0081] Among them, step S(m + n) includes:

[0082] According to the target temperature-related parameters, the m-th predicted temperature-related parameters of each of the i-th heated zone and the j-th heated zone in step Sm, and the system delay correction value of each of the i-th heating zone and the j-th heating zone, perform the (m + n)-th prediction calculation for the (m + n)-th temperature adjustment process, to obtain the (m + n)-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone, and the (m + n)-th predicted temperature-related parameters of each of the i-th heated zone and the j-th heated zone, and control the semiconductor heating device to make the i-th heating zone and the j-th heating zone perform the (m + n)-th temperature adjustment process with their respective (m + n)-th optimal temperature adjustment powers.

[0083] Embodiment 1

[0084] This embodiment provides a control system for a semiconductor heating device. Taking the heating control system of a heating device with two zones as an example, the control system of this semiconductor heating device is a dual-zone heating control system, that is, the dual-zone heating control system separately performs temperature-raising control on two heating zones of the semiconductor heating device to make the two heating zones generate heat. Specifically, referring to Figure 3 , taking the semiconductor heating device including two zones, zone a and zone b, as an example, the control system of this semiconductor heating device, referring to Figure 3 , includes a zone a power control module, a zone b power control module, a zone a temperature measurement module, a zone b temperature measurement module, and a prediction processing module. When the number of zones increases, corresponding power control modules and temperature measurement modules can be added.

[0085] The number of power control modules corresponds to the number of heating zones of the heating device to achieve one-to-one control, that is, Figure 3 the shown zone a power control module is correspondingly electrically connected to zone a of the heating device to control the heating of zone a, and the zone b power control module is correspondingly electrically connected to zone b of the heating device to control the heating of zone b. The prediction processing module is communicatively connected to each power control module and each temperature measurement module. The prediction processing module receives the information interacted by each temperature measurement module and each power control module, prestores the target temperature-related parameters including the target temperature, and performs prediction calculations based on the above information to obtain prediction information and the optimal temperature-raising power information, and issues power control instructions to each power control module respectively according to the optimal temperature-raising power. Each power control module drives the respective heating zones of the heating device to generate heat in response to the received power control instructions, so as to perform temperature-raising control on the corresponding heated areas on the device to be heated, and stores the real-time power at each moment for information interaction with the prediction processing module.

[0086] The temperature measurement module is used to obtain the real-time temperature of the device to be heated and feedback the above real-time temperature to the prediction processing module. The temperature monitoring module can include a contact temperature measurement unit to obtain the temperature on the surface of each heated area of the device to be heated, or can include a non-contact temperature measurement unit to obtain the temperature near each heated area of the device to be heated. In an alternative embodiment, the number of temperature measurement units of the temperature measurement module is at least the same as the number of heated areas of the device to be heated and is set in one-to-one correspondence to obtain the real-time temperature of each heated area of the device to be heated.

[0087] The prediction processing module is provided with a storage module for storing each parameter data obtained from the power control module and the temperature measurement module, as well as the prediction information obtained by prediction calculations in each step.

[0088] In an alternative embodiment, the temperature measurement unit may be a component such as a thermocouple that can collect temperature information. The power control module may specifically be a PSU (Power Supply Unit). The above storage module may be built into the prediction processing module or be external as an independent module. The storage module stores various types of collected information, calculated information, parameter information, and correspondence information for prediction and processing to call. The prediction processing module may specifically include a host computer and a PLC. The host computer performs prediction calculations, and the PLC performs logical control instruction conversion and transmission. It can be understood that the specific types and arrangement methods of each module can be selected according to actual needs.

[0089] Embodiment 2

[0090] This embodiment provides a control method for a semiconductor heating device. In this embodiment, as Figure 4a and Figure 4b shown, the semiconductor heating device includes two zones: zone a and zone b. Zone a and zone b are arranged adjacent to each other. For example, Figure 4a shown in a side-by-side adjacent manner, or as Figure 4b shown, zone b surrounds zone a. The above zones a and b of the semiconductor heating device respectively correspond to Figure 5a and Figure 5b shown heated zones a' and b' of the device to be heated (i.e., the base).

[0091] The same substrate can cover Figure 4b shown heated zones a' and b', or different substrates can be placed in heated zones a' and b' respectively. To ensure the temperature uniformity of all parts of the substrate surface, the host computer controls the heating of zones a and b respectively through the temperature control unit and introduces system delay correction to overcome the problem that the controlled quantity cannot be controlled in time due to the response delay between the host computer, the temperature control unit, and each zone. In addition, due to the adjacent positional relationship between heated zones a' and b' of the base, there will be heat conduction between adjacent heated zones, that is, the temperature of heated zone a' is affected by the heat transfer of heated zone b', and the temperature of heated zone b' is affected by the heat transfer of heated zone a'. Therefore, in this embodiment, the host computer also introduces a correction calculation of heat conduction during the process of controlling the heating of each zone of the semiconductor heating device.

[0092] For the case where the above semiconductor heating device and the device to be heated each include two zones, zone a of the semiconductor heating device is used as the first heating zone, and the corresponding zone a' of the device to be heated is the first heated zone of the device to be heated. Zone b of the semiconductor heating device is used as the second heating zone, and the corresponding zone b' of the device to be heated is the second heated zone of the device to be heated. The temperature increase control process is described in detail.

[0093] In step S0 of this embodiment: First, an initial temperature increase process is carried out. Specifically, in the initial temperature increase process, the prediction processing module issues an initial power control instruction to the power control module of partition a. The power control module connected to partition a responds to this initial power control instruction to perform initial temperature increase control on partition a. Partition a responds to this initial temperature increase drive control and increases the temperature at an initial temperature increase rate until the heated area a' reaches the current temperature T a0 ;

[0094] In step S0 of some embodiments, the initial temperature adjustment process can be a temperature increase process starting from room temperature, or an initial temperature adjustment process started after increasing the temperature from room temperature to a certain temperature (for example, increasing the temperature at the maximum temperature increase rate). This can not only save time but also effectively avoid temperature overshoot.

[0095] In this embodiment, the target temperature T set is 800 °C. Starting from room temperature, initial temperature increase control is carried out with the current temperature T a0 being 5 °C lower than 800 °C as the target. That is, the current temperature T a0 is 795 °C, and a deviation of ±0.1 °C is allowed in actual control.

[0096] In some embodiments, the target temperature T set is 800 °C. Starting from room temperature, initial temperature increase control is carried out with the current temperature T a0 being 5 °C to 50 °C lower than 800 °C as the target.

[0097] In some embodiments, the current temperature T a0 is at least 90% of the target temperature T set .

[0098] The above-mentioned current temperature T a0 is less than the set temperature T set . Optionally, the current temperature T a0 is set to be 0.5% to 10% lower than the set temperature T set , that is, T a0 = (90% - 99.5%)T set ; Further, the current temperature T a0 is set to be 0.5% to 7% lower than the set temperature T set , that is, T a0 = (93% - 99.5%)T set . Therefore, specifically, the current temperature T set can be set according to the level of the target temperature T a0 .

[0099] For example, in an alternative embodiment, the target temperature T set is about 200 °C. At this time, the current temperature T can be seta0 3℃~5℃ lower than 200℃, that is, set the current temperature T a0 It is 195℃~197℃.

[0100] In step S0 of this embodiment, the current temperature-related parameters of the heated area a′ and the heated area b′ are obtained, including the current temperature T of the heated area a′. a0 and the corresponding current power P a0 When the current temperature of the heated area b′ is T b0 and the corresponding current power P b0 After step S0 of this embodiment is completed, the set current temperature T is reached. a0 After that, from the current temperature T a0 To target temperature T set The heating process is finely controlled step by step, specifically:

[0101] Execute step S1 (i.e. m=1): according to T set , and T set The corresponding target power P set , the current temperature T of the first heated area a′ a0 and the corresponding current power P a0 When the current temperature of partition b′ is T b0 and the corresponding current power P b0 The first prediction calculation is performed to predict the control parameters of the first heating process to guide the subsequent first heating process. The specific steps include:

[0102] S11: The prediction processing module predicts the optimal heating power P of the partition a for executing the first heating process opt-a1 , predicted temperature T a1 And the corresponding predicted power P a1 ; and predict the optimal heating power P for partition b to perform the first heating process opt-b1 ;

[0103] Specifically, the prediction processing module is based on the pre-stored target temperature T set and the target power P set , the current temperature T of the first heated area fed back by the temperature measurement module in area a a0 , the feedback from the power control module in zone a and T a0 The corresponding current power P a0 Calculate and obtain the first cost function C corresponding to the first heating zone a1 , then for the first cost function C a1 Minimize to obtain the first optimal temperature control power P of the first heating zone opt-a1 ; More specifically: C a1 =(Ta0 -T set ) 2 +(P a0 -P set ) 2 ,P opt-a1 =argminC a1 ;The prediction processing module converts the P opt-a1 information into corresponding power control instructions and sends them to the power control module of zone a;

[0104] Specifically, according to the target temperature T set , the target power P set , the current temperature T b0 of the second heated zone and the corresponding current power P b0 , calculate to obtain the first cost function C b1 corresponding to the second heating zone, and then minimize the first cost function C b1 to obtain the first optimal temperature adjustment power P opt-b1 of the second heating zone. More specifically: C b1 =(T b0 -T set ) 2 +(P b0 -P set ) 2 , P opt-b1 =argmin C b1 . The prediction processing module converts the P opt-b1 into corresponding power control instructions and sends them to the power control module of zone b.

[0105] Specifically, predict the temperature T a1 of the heated zone a' after the end of the first heating process = T a0 +α[P a0 -σT a0 4 -k(T a0 -T b0 )]; predict the temperature T b1 of the partition b' after the end of the first heating process = T b0 +α[P b0 -σT b0 4 -k(T b0 -T a0 )]. There is heat conduction between adjacent heated zones, so the heat transfer influence of adjacent heating zones needs to be taken into account. Among them, α is a coefficient related to the heating rate, k is the heat conduction coefficient, which is related to the respective constituent materials of the heated zone a' and the heated zone b', and α and k are system-set values; σ is the Stefan-Boltzmann constant, with a value of 5.67x10 -8W / m 2 K.

[0106] S12: The power control module in area a controls area a to heat up at the first optimal heating rate P opt-a1 for the first heating process, and the power control module in area b controls area b to heat up at P opt-b1 for the first heating process;

[0107] S13: Obtain the respective delay times Δt dely-a1 and Δt dely-b1 of area a and area b, as well as their respective system delay correction values D sa and D sb Specifically:

[0108] In order to eliminate the time lag between the start of heating due to the semiconductor heating device responding to the drive control of the temperature control unit and the temperature control unit sending a drive command to the heating device during the subsequent heating process, and the time lag between the temperature control unit responding to the control command of the host computer and the host computer sending a control command, resulting in an obvious lag in temperature control. During the first heating process described above, calculate and determine the delay time of each area and the heating delay term during the heating process.

[0109] The delay time of each area and the heating delay term are caused by the response lag between the units of the heating device, that is, due to the inherent response characteristics of the hardware. Therefore, it can be considered that they do not change with the heating process and are fixed throughout the heating process. Therefore, during the first heating process of area a and area b, determine the above delay time and heating delay term for predictive calculation in the subsequent heating process, which can reduce or even eliminate the problem of long and unstable temperature stabilization time caused by the response time lag problem due to the inherent response characteristics of the hardware in the subsequent heating process.

[0110] The prediction processing module records the time when the P opt-a1 information is converted into the corresponding power control command and sent to the power control module in area a, and obtains the corresponding relationship between the real-time temperature and time in area a according to the real-time temperature feedback by the temperature measurement module in area a. This corresponding relationship is fitted from the real-time temperature data of the initial heating process and the first heating process in area a. Specifically: Area a responds to the heating drive control, and the corresponding area on the heating base, the heated area a′, is heated for the first heating process with a duration of Δt1. The temperature measurement unit in area a feeds back the real-time temperatures of the heated area a′ to the prediction processing module. Referring to Figure 6 for understanding, the time when the prediction processing module converts the P opt-a1 information into the corresponding power control command and sends it to the power control module in area a is t pa1, obtained by fitting the real-time temperature data of the initial heating process of partition a and the real-time temperature data of the first heating process Figure 6 As can be seen from the corresponding relationship between the real-time temperature and time of partition a shown in Figure 6 , due to the change in the heating rate, there is a trend mutation time t′ pa1 , due to the time delay caused by the aforementioned inherent response characteristics of the hardware, t′ pa1 lags behind t pa1 , and there is a time difference Δt between the two dely-a1 =(t′ pa1 -t pa1 ). The first heating process ends at the moment of t′ a1 . Considering the time delay caused by the aforementioned inherent response characteristics of the hardware, it can be considered that the corresponding power control instruction at the end of the first heating process is issued at the moment of t a1 before t′ a1 , and the time difference between t′ a1 and t a1 is also Δt dely-a1 . Therefore, taking the temperature T a1 corresponding to the moment of t as the reference, the system delay correction value D sa1 of partition a is calculated as D sa =σT 4 sa1 +k(T sa1 -T sb1 ); among them, the determination method of T sb1 is the same as the principle of the determination method of T sa1 , and will not be elaborated here. k is the heat conduction coefficient, which is related to the materials of partition a and partition b respectively.

[0111] The prediction processing module records the time when the P opt-b1 information is converted into the corresponding power control instruction and sent to the power control module of area b, and obtains the corresponding relationship between the real-time temperature and time of partition b according to the real-time temperature feedback by the temperature measurement module of area b. This corresponding relationship is fitted from the real-time temperature data of the initial heating process and the first heating process of partition b. Specifically: Partition b responds to the heating drive to control the corresponding area on the heating base, the heated area b′, and performs the first heating process with a duration of △t1. The temperature measurement unit of area b feeds back the real-time temperatures of the heated area b′ to the prediction processing module. Specifically, D sb =σT 4 sb1 +k(T sb1 -T sa1 ); for the specific implementation method, please refer to the description of the calculation process of D sa above.

[0112] Step S2 (i.e., m = 1, n = 1) specifically includes:

[0113] S21: Calculate based on T set , P set , the predicted temperature and corresponding predicted power of each heated zone in step S11 to obtain the second cost function C of zone a a2 =(T c1 -T set ) 2 +(P a1 -P set ) 2 , and the second optimal heating power P of zone a opt-a2 =argmin C a2 . Similarly, the second cost function C of zone b b2 =(T b1 -T set ) 2 +(P b1 -P set ) 2 , and the second optimal heating power P of zone b opt-b2 =argmin C b2 ;

[0114] Based on the predicted temperature T a1 and the corresponding predicted power P a1 of the heated zone a′, the predicted temperature T b1 of the heated zone b′, and the system delay correction value D sa of the first heating zone, calculate the second predicted temperature of the heated zone a′: T a2 =T a1 +α[P a1 -σT a1 4 -k(T a1 -T b1 )-D sa ;

[0115] Based on the predicted temperature T b1 and the corresponding predicted power P b1 of the heated zone b′, the predicted temperature T a1 of the first heated zone a′, and the system delay correction value D sb of the second heating zone, calculate the second predicted temperature of the heated zone b′: T b2 =T b1 +α[P b1 -σT b1 4 -k(T b1 -T a1 )-D sb ;

[0116] S22: The power control module in area a controls area a to heat up at the second optimal heating power P opt-a2 for the second heating process, and the power control module in area b controls area b to heat up at the second optimal heating power P opt-b2 for the second heating process with a duration of Δt2.

[0117] Step S3 (m = 1, n = 2) specifically includes:

[0118] S31: Calculate based on T set , P set , the predicted temperatures and corresponding predicted powers of each heated area in step S21 to obtain the third cost function C a3 of area a = (T a2 - T set ) 2 +(P a2 - P set ) 2 , and the third optimal heating power P opt-a3 of area a = argmin C a3 . Similarly, the third cost function C b3 of area b = (T b2 - T set ) 2 +(P b2 - P set ) 2 , and the third optimal heating power P opt-b3 of area b = argmin C b3 ;

[0119] Based on the predicted temperature T a2 and the corresponding predicted power P a2 of the heated area a′, the predicted temperature T b2 of the heated area b′, and the system delay correction D sa of the first heating zone, calculate the third predicted temperature of area a: T a3 = T a2 + α[P a2 - σT a2 4 - k(T a2 - T b2 ) - D sa ;

[0120] Based on the predicted temperature T b2 and the corresponding predicted power P b2 of the heated area b′, the predicted temperature T a2 of the heated area a′, and the system delay correction D sb of the second heating zone, calculate the third predicted temperature of area b: Tb3 = T b2 + α[P b2 - σT b2 4 - k(T b2 - T a2 ) - D sb ;

[0121] S32: The power control module of area a controls area a to perform the third heating process with a duration of Δt3 at the above-mentioned third optimal heating power P opt-a3 , and the power control module of area b controls area b to perform the third heating process with a duration of Δt3 at P opt-b3 .

[0122] In step S4 (m = 1, n = 3):

[0123] S41: Calculate based on T set , P set , the predicted temperature and corresponding predicted power of each heated area in step S31 to obtain C a4 = (T a3 - T set ) 2 + (P a3 - P set ) 2 , the fourth optimal heating power P opt-a4 = argmin C a4 , similarly, C b4 = (T b3 - T set ) 2 + (P b3 - P set ) 2 , the fourth optimal heating power P opt-b4 = argmin C b4 ;

[0124] S42: The power control module of area a controls area a to perform the fourth heating process with a duration of Δt4 at the above-mentioned fourth optimal heating power P opt-a4 until the target temperature is reached, and the power control module of area b controls area b to perform the fourth heating process with a duration of Δt4 at P opt-b4 until the target temperature is reached.

[0125] In summary, in this embodiment, m = 1, and n takes values 1, 2, and 3 in sequence. It can be understood that after D sa and D sb are determined, using D sa and D sbThe temperature control is performed at least once.

[0126] In some embodiments, the duration of each heating-up process may be equal, or may not be completely equal or not equal at all according to the actual control situation and control requirements. The specific duration needs to be adaptively adjusted according to the actual control requirements, mainly depending on the difference between the current temperature and the target temperature of each partition reached in step S0 and the requirements for temperature stability and duration.

[0127] In this embodiment, the temperature increase control is separately performed on two partitions of the semiconductor heating device, and the best heating rate is used for heating in each heating process. Thus, it is ensured that the temperature of each partition rises gradually through multiple heating processes from the current temperature to the set temperature, and the error between the heating temperature and the target temperature of each heating process is controlled to the minimum, or even the error between the two is eliminated, thereby ensuring the consistency between the heating temperature and the set temperature and preventing defects in the vapor deposition process caused by insufficient heating or overheating.

[0128] Embodiment III

[0129] This embodiment also provides a control method for a semiconductor heating device. Specifically, another method for determining the system delay correction value in the control method is provided. Specifically:

[0130] In the step Sm, the steps of performing correction calculation to obtain the system delay correction values of the first heating zone and the second heating zone respectively include:

[0131] Obtain the issuance time t of the m-th power control instruction m ;

[0132] According to the real-time temperature and time correspondence relationship of the first heated zone, obtain the temperature T corresponding to the first heated zone at the issuance time t m ; sa ;

[0133] According to the real-time temperature and time correspondence relationship of the second heated zone, obtain the temperature T corresponding to the second heated zone at the issuance time t m ; sb ;

[0134] According to the temperature T corresponding to the first heated zone at the issuance time t m ; sa and the temperature T corresponding to the second heated zone at the issuance time t j ; sb calculate to obtain the system delay correction value D of the first heating zone sa , and obtain the system delay correction value D of the second heating zone sb .

[0135] More specifically:

[0136] D sa = σT 4 sa + k(T sa - T sb );

[0137] D sb = σT 4 sb + k(T sb - T sa );

[0138] Wherein, k is the heat conduction coefficient and σ is the Stefan - Boltzmann constant.

[0139] Example Four

[0140] This embodiment provides a control method for a semiconductor heating device. In this embodiment, as Figure 7a shown, the semiconductor heating device includes three zones: zone a, zone b, and zone c. Zone a is located in the central region of the semiconductor heating device 3, zone b surrounds zone a and is located in the sub - peripheral region of the semiconductor heating device 3, and zone c surrounds zone b and is located in the outermost peripheral region of the semiconductor heating device 3. Correspondingly, zone a, zone b, and zone c of the semiconductor heating device 3 respectively correspond to zone a′, zone b′, and zone c′ on the base 2 as Figure 7b shown, that is, the heated zones a′, b′, and c′.

[0141] As Figure 5a shown, the heating zone adjacent to zone a is zone b, the heating zones adjacent to zone b are zone a and zone c, and the heating zone adjacent to zone c is zone b. It can be seen that both zone a and zone c in this embodiment have only one adjacent heating zone, which is the same as the setting of zone a in Embodiment Two. Therefore, the temperature - rising control process of zone a and zone c is the same as the temperature - rising process of zone a described in Embodiment Two, and the temperature - rising process of zone a and zone c can be completed with reference to the description of Embodiment Two. The heating zones adjacent to zone b are two zones, zone a and zone c. That is, in the heating device of this embodiment, zone b is the i - th zone, and the j adjacent zones are zone a and zone c. Therefore, the temperature - rising process of zone b must be jointly affected by zone a and zone c. In this regard, when controlling the temperature - rising of zone b, the predicted temperature in the temperature - rising process needs to consider the combined influence of zone a and zone c.

[0142] Specifically, the temperature - rising process of zone b includes, first, according to the heating control method described in Embodiment Two, completing step S0. In the initial temperature - rising process, obtain the target temperature Tset The corresponding target power P set , and obtain the current temperature T of the heated area b′ b0 and the corresponding current power P b0 , as well as the current temperature T of the adjacent heated area a′ a0 and the corresponding current power P a0 , the current temperature T of the heated area c′ c0 and the corresponding current power P c0 . The temperature increase of each area is carried out synchronously.

[0143] Similarly, after the end of step S0, when the set current temperature T b0 is reached, after that, the temperature increase process from the current temperature T b0 to the target temperature T set is finely controlled step by step, and the fine control of each area is also carried out synchronously. Specifically:

[0144] Execute step S1 (i.e., m = 1): According to T set and the target power P set corresponding to T set , the current temperature T of the heated area b′ b0 and the corresponding current power P b0 , as well as the current temperature T of the adjacent heated area a′ a0 and the corresponding current power P a0 , the current temperature T of the heated area c′ c0 and the corresponding current power P c0 , perform the first prediction calculation to predict the temperature-related parameters and control parameters of the first temperature increase process to guide the subsequent first temperature increase process. The specific steps include:

[0145] S11: Predict the optimal heating power P for the first temperature increase process of partition b opt-ai , predict the temperature T b1 and the corresponding predicted power P b1 ; and predict the optimal heating power P for the first temperature increase process of partition b opt-b1 ;

[0146] Specifically, the prediction processing module calculates according to the pre-stored target temperature T set and the target power P set , the current temperature T of the heated area b′ fed back by the temperature measurement module of partition b b0 , and the current power P b0 corresponding to T fed back by the power control module of partition b b0 to obtain the first cost function C corresponding to partition b b1 , and then for the first cost function C b1Minimization is performed to obtain the first optimal temperature control power P of partition b opt-b1 ; More specifically: C b1 =(T b0 -T set ) 2 +(P b0 -P set ) 2 , P opt-b1 =argmin C b1 ; The prediction processing module converts the P opt-b1 information into the corresponding power control instruction and sends it to the power control module of partition b;

[0147] Specifically, predict the temperature T b1 of the heated area b' after the end of the first heating process = T b0 +αQ bm ; Since different partitions of the heated device may have different selected heating materials, therefore, the above heat conduction term Q bm related to the material will be different. Specifically, when the materials of each heated partition are different, Q bm =σT b0 4 +k ba (T b0 -T a0 )+k bc (T b0 -T c0 ), k ba is the heat conduction coefficient related to the composition materials of partition a' and partition b', k bc is the heat conduction coefficient related to the composition materials of partition c' and partition b', and the specific determination method is a conventional means in the art. Therefore, when the materials of each heated partition are the same, that is, k ba =k bc =k, Q b1 =σT b0 4 +k((T b0 -T a0 )+(T b0 -T c0 ))). Among them, α is the coefficient related to the heating rate, k is the heat conduction coefficient related to the composition materials of the heated partition, the specific determination method is a conventional means in the art, σ is the Stefan-Boltzmann constant, and the value is 5.67x10 -8 W / m 2 K.

[0148] For the control of partition a in step S11, please refer to step S11 of Embodiment 2. For the control of partition c in step S11, please refer to step S11 of Embodiment 2. The difference is that the current temperature T of the heated area corresponding to partition c is also obtained. c0 And the corresponding current power P c0 , C c1 =(T c0 -T set ) 2 +(P c0 -P set ) 2 , P opt-c1 =argmin C c1 .

[0149] S12: The power control module of partition b controls partition b to perform the first heating process at the above first optimal heating rate P opt-b1 . At the same time, the power control modules of partition a and partition c also control partition a and partition c respectively to perform the first heating process synchronously at P opt-a1 and P opt-c1 .

[0150] S13: Obtain the respective delay times Δt dely-b1 , Δt dely-a1 and Δt dely-c1 of partition b, partition a, and partition c, as well as their respective system delay correction values D sb , D sa and D sc . For the calculation principle of each partition delay correction value, please refer to the corresponding description in Embodiment 2. The obtained delay correction values of each partition are: D sb =σT 4 sb1 +k((T sb1 -T sa1 )+(T sb1 -T sc1 )); D sa =σT 4 sa1 +k(T sa1 -T sb1 ), D sc =σT 4 sc1 +k(T sc1 -T sb1 ), the above situation is when the constituent materials of each heated partition are the same; when the constituent materials of each heated partition are different, the delay correction values of each partition are: D sb =σT 4 sb1 +k ba (Tsb1 -T sa1 ) + k bc (T sb1 -T sc1 );D sa = σT 4 sa1 + k ab (T sa1 -T sb1 )、D sc = σT 4 sc1 + k cb (T sc1 -T sb1 )。

[0151] Step S2 (i.e., m = 1, n = 1) specifically includes:

[0152] S21: Calculate the second cost function C of partition b b2 = (T b1 -T set ) 2 + (P b1 -P set ) 2 , and minimize this second cost function to obtain the second optimal heating power P of partition b opt-b2 = argmin C b2 ;

[0153] According to the target temperature T set , the target power P set , the predicted temperatures T a1 , T c1 of the heated zones a' and c', and the corresponding predicted powers P a1 and P c1 perform calculations to obtain the second cost functions C corresponding to the heated zones a' and c': c2 :

[0154] C a2 = (T a2 -T set ) 2 + (P a2 -P set ) 2 ;

[0155] C c2 = (T c2 -T set ) 2 + (P c2 -P set ) 2 .

[0156] Minimize the above second cost function respectively to obtain the second optimal heating power corresponding to the heated zone a' and the heated zone c':

[0157] P opt-a2 = argmin C a2 ; P opt-c2 = argmin C c2 .

[0158] According to the predicted temperature T b1 of the heated zone b' and the corresponding predicted power P b1 , as well as the system delay correction value D sb of the partition b, and the predicted temperatures T a1 , T c1 of the heated zones a' and c' adjacent to the heated zone b', calculate the second predicted temperature T b2 of the heated zone b': T b2 = T b1 + α[P b1 - Q2]; where Q2 is the heat conduction term related to the material of the heating device. When the materials of each heated partition are different: Q2 = σT b1 4 + k ba (T b1 - T a1 ) + k bc (T b1 - T c1 ) + D sb ; when the materials of each heated partition are the same: Q2 = σT b1 4 + k((T b1 - T a1 ) + (T b1 - T c1 )) + D sb .

[0159] Similarly, for the calculation process of the second predicted temperature of the heated zone a', please refer to step S21 of Embodiment 2. When the constituent materials of the heated zone a' and the heated zone b' are different, the k here is k ab ; the calculation process of the second predicted temperature of the heated zone c' is the same as step S21 of Embodiment 2, except that T c2 = T c1 + α[P c1 - σT c1 4 - k cb (T c1 - T b1 ) - D sc ;

[0160] S22: The power control module of zone b controls zone b to heat up at the second optimal heating power P opt-b2 in the second heating process. The power control modules of zone a and zone c control zone a and zone c to heat up at the second optimal heating power P opt-a2 、P opt-c2 for a second heating process with a duration of Δt2. That is, the second heating processes of zones a, b, and c are carried out simultaneously.

[0161] Step S3 (m = 1, n = 2) specifically includes:

[0162] S31: Calculate the third cost function C b3 =(T b2 -T set ) 2 +(P b2 -P set ) 2 , minimize this third cost function to obtain the third optimal heating power P opt-b3 =argmin C b3 ;

[0163] Based on the target temperature T set , the target power P set , the predicted temperatures T a2 、T c2 of the heated zones a' and c', and the corresponding predicted powers P a2 and P c2 , perform calculations to obtain the third cost functions C a3 corresponding to the heated zones a' and c':

[0164] C a3 =(T a2 -T set ) 2 +(P a2 -P set ) 2 ;

[0165] C c3 =(T c2 -T set ) 2 +(P c2 -P set ) 2 .

[0166] Minimize the above third cost functions respectively to obtain the third optimal heating powers corresponding to the heated zones a' and c':

[0167] P opt-a3 =argmin Ca3 ; P opt-c3 = argmin C c3 .

[0168] According to the predicted temperature T of the heated zone b' b1 and the corresponding predicted power P b2 , as well as the system delay correction value D of the partition b sb , the predicted temperatures T a2 , T c2 of the heated zones a' and c' adjacent to the heated zone b' are calculated to obtain the third predicted temperature T b3 of the heated zone b': T b3 = T a2 + α[P b2 - Q3]; where, when the materials of each heated partition are different: Q3 = σT b2 4 + k ba (T b2 - T a2 ) + k bc (T b2 - T c2 ) + D sb ; when the materials of each heated partition are the same: Q3 = σT b2 4 + k((T b2 - T a2 ) + (T b2 - T c2 )) + D sb .

[0169] Similarly, for the calculation process of the third predicted temperature of the heated zone a', please refer to step S31 of Embodiment 2. When the constituent materials of the heated zone a' and the heated zone b' are different, the k here is k ab ; the calculation process of the third predicted temperature of the heated zone c' is the same as step S31 of Embodiment 2, except that T c3 = T c2 + α[P c2 - σT c2 4 - k cb (T c2 - T b2 ) - D sc ;

[0170] S32: The power control module of partition b controls partition b to perform the third heating process with a duration of Δt3 at the above-mentioned third optimal heating power P opt-b3 , and the power control modules of partitions a and c control partitions a and c at the third optimal heating powers P opt-a3 , Popt-c3 Synchronously perform the 3rd heating process with a duration of Δt3 with partition b.

[0171] In step S4 (m = 1, n = 3):

[0172] S41: Calculate the 4th cost function C of partition b b4 =(T b3 -T set ) 2 +(P b3 -P set ) 2 , minimize this 4th cost function to obtain the 4th optimal heating power P of partition b opt-b4 =argmin C b4 ;

[0173] Based on the target temperature T set , the target power P set , the predicted temperatures T a3 , T c3 of the heated zones a' and c' and the corresponding predicted powers P a3 and P c3 perform calculations to obtain the 4th cost functions C corresponding to the heated zones a' and c' a4 :

[0174] C a4 =(T a3 -T set ) 2 +(P a3 -P set ) 2 ;

[0175] C c4 =(T c3 -T set ) 2 +(P c3 -P set ) 2 .

[0176] Minimize the above 4th cost functions respectively to obtain the 4th optimal heating powers corresponding to the heated zones a' and c':

[0177] P opt-a4 =argmin C a4 ; P opt-c4 =argmin C a4 .

[0178] S42: The power control module of partition b controls partition b according to the corresponding power control instruction with the above 4th optimal heating power P opt-b4Perform the 4th heating process with a duration of △t4. The power control modules of zone a and zone c control zone a and zone c to synchronously heat at the 4th optimal heating power P opt-a4 、P opt-c4 for a duration of △t4.

[0179] In summary, in this embodiment, m = 1, and n takes values of 1, 2, and 3 in sequence. It can be understood that after D sa and D sb 、D sc are determined, the temperature control using D sa and D sb 、D sc is performed at least once.

[0180] As described above, in the case where a heating zone has, for example, 2 adjacent heating zones, each heating process takes into account the thermal influence between the corresponding heated zone and each adjacent heated zone, making the heating process control more accurate and the temperature more stable.

[0181] In an alternative embodiment of this embodiment, as Figure 8a shown, the semiconductor heating device also includes three zones: zone a, zone b, and zone c. Different from the three zones shown in Figure 7a , zone a, zone b, and zone c are formed as fan-shaped regions and are arranged adjacent to each other in pairs. That is, in the heating device shown in Figure 8a , zone a has two adjacent heating zones, zone b and zone c; zone b has two adjacent heating zones, zone a and zone c; zone c has two adjacent heating zones, zone a and zone b. Correspondingly, the corresponding Figure 8b base also has corresponding zones a′, b′, and c′. Therefore, in this alternative embodiment, when predicting the second predicted temperature of the second heating process based on the parameters of the first heating process for each zone after completing the initial heating process and the first heating process for each zone, the influence of the two adjacent heating zones of each zone needs to be considered simultaneously. Therefore, the heating control process of each zone can refer to the description of the heating control process of zone b shown in Figure 7a above.

[0182] Specifically, the predicted temperatures reached by each heated zone after different heating processes are:

[0183] When the materials of each heated zone are the same, the k ij values of each zone are the same. When the materials of each heated zone are different, the k ij values of different zones are respectively taken, and k ijThe determination is common general knowledge in the art. Among them, i is b, and j is a, c; n successively takes positive integers such as 1, 2, 3...

[0184] Example Five

[0185] This embodiment provides a control method for a semiconductor heating device. In this embodiment, as Figure 9a shown, the heating device of the semiconductor heating equipment in this embodiment includes four partitions: partition a, partition b, partition c, and partition d. Partition a is located in the central area of the heating device, and partitions b, c, and d are distributed around partition a. Therefore, each partition has 3 adjacent partitions: partition a is adjacent to partitions b, c, and d, partition b is adjacent to partitions a, c, and d, partition c is adjacent to partitions a, b, and d, and partition d is adjacent to partitions a, b, and c, that is, each partition has three heating zones. Correspondingly, partitions a, b, c, and d of the heating device 3 of the semiconductor device respectively correspond to partitions a', b', c', and d' on the base as Figure 9b shown. Similarly, each heated area on the base 2 also has three adjacent heated areas.

[0186] Different from the above-mentioned Example Four, in this embodiment, the number of adjacent partitions of each partition increases. Therefore, during the heating control process, it is necessary to simultaneously consider the influence of a larger number of adjacent partitions on the heating partition. The independent control process of each partition is the same as that described in Example Four and will not be elaborated here. The difference is that the predicted temperature obtained by each heated partition after each heating-up process is different, and it can be specifically obtained according to the following formula in combination with the process described in Example Four:

[0187] When the materials of each heated partition are the same, the k values of each partition are the same. When the materials of each heated partition are different, different partitions have different k ij values. When i is a, b, c, d; when i is a, j is b, c, d; when i is b, j is a, c, d; when i is c, j is a, b, d; when i is d, j is a, b, c; n successively takes positive integers such as 1, 2, 3... ij respectively take values, and the determination of k ij is common general knowledge in the art. Among them, i is a, b, c, d; when i is a, j is b, c, d; when i is b, j is a, c, d; when i is c, j is a, b, d; when i is d, j is a, b, c; n successively takes positive integers such as 1, 2, 3...

[0188] The above embodiments only illustratively explain the principles and effects of the present invention, rather than limiting the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A control method for a semiconductor heating device, characterized in that, Provided is a semiconductor device including a semiconductor heating device and a device to be heated. The semiconductor heating device includes at least three heating zones for generating heat. Among them, the i-th heating zone is adjacent to the remaining j heating zones, where j is a positive integer greater than or equal to 2. The i-th heating zone transfers heat to the i-th heated zone corresponding to the device to be heated, and the j heating zones respectively transfer heat to the j heated zones corresponding to the device to be heated in a one-to-one manner; The heating control method includes a heating control method for the i-th heating zone, which includes the following steps: S0: Obtain the target temperature T set and the target temperature T set corresponding target power P set , control the semiconductor heating device to heat up the i-th heating zone and the j-th heating zone; Sm: Perform the m-th prediction calculation for the m-th temperature adjustment process: Based on the target temperature T set and the target power P set , and the current temperature T of the i-th heated zone obtained i0 and the corresponding current power P i0 , and the current temperature T of each heated zone in the j-th heated zone j0 and the corresponding current power P j0 , obtain the m-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone; Based on the current temperature T of the i-th heated zone i0 and the corresponding current power P i0 , and the current temperature T of each heated zone in the j-th heated zone j0 perform calculations to obtain the m-th predicted temperature T of the i-th heated zone im and the corresponding m-th predicted power P im ; Based on the current temperature T of each heated zone in the j-th heated zone j0 and the corresponding current power P j0 , and the current temperature T of the i-th heated zone i0 perform calculations to obtain the m-th predicted temperature T of each heated zone in the j-th heated zone jm and the corresponding m-th predicted power P jm ; Controlling the semiconductor heating device to make the i-th heating zone and each of the j heating zones perform the m-th temperature adjustment process at their respective m-th optimal temperature adjustment powers; Obtaining and performing a correction calculation based on the sending time of the power control instructions corresponding to the m-th optimal temperature adjustment powers of the i-th heating zone and each of the j heating zones, and the real-time temperature-time correspondence relationships of the i-th heated zone and each of the j heated zones, to obtain the system delay correction values of the i-th heating zone and each of the j heating zones; S(m+n): Perform the (m+n)th prediction calculation for the (m+n)th temperature adjustment process: According to the target temperature T set And the target power P set , the mth predicted temperature T of the i-th heated area in the step Sm im and the corresponding mth predicted power P im , and the mth predicted temperature T of each of the j heating zones jm and the corresponding mth predicted power P jm , and the system delay correction value of each of the i-th heating zone and the j-th heating zone, to obtain the (m+n)th optimal temperature control power of each of the i-th heating zone and the j-th heating zone; according to the predicted temperature T of the i-th heating zone im And the corresponding predicted power P im , the predicted temperature T of each of the j heating zones jm And the system delay correction value D of the i-th heating zone si Calculate and obtain the predicted temperature T of the i-th heated area i(m+n) And the corresponding predicted power P i(m+n) ; According to the predicted temperature T of each of the j heating zones jm And the corresponding predicted power P jm , the predicted temperature T of the i-th heated area im And the system delay correction value D of each heated zone in the j heating zones sj Calculate and obtain the predicted temperature T of each of the j heating zones j(m+n) And the corresponding predicted power P j(m+n) ; Controlling the semiconductor heating device to make the i-th heating zone and the j heating zones perform the (m + n)-th temperature adjustment process at their respective (m + n)-th optimal temperature adjustment powers; Repeatedly executing step S(m + n) until the i-th heated zone and the j heated zones respectively reach the target temperature, where n is a positive integer greater than or equal to 1 and takes values in sequence.

2. The control method of the semiconductor heating device according to claim 1, wherein: ； where α is the temperature regulation rate correlation coefficient, is the thermal conductivity, and σ is the Stefan-Boltzmann constant.

3. The control method of the semiconductor heating device according to claim 1, characterized in that, The step S m In the step, the step of performing the m-th prediction calculation to obtain the m-th optimal temperature adjustment power of each of the i-th heating zone and the j-th heating zone includes: According to the target temperature T set 、the target power P set 、the current temperature T i0 of the i-th heated zone and the corresponding current power P i0 are calculated to obtain the m-th cost function C im corresponding to the i-th heating zone, and then the m-th cost function C im is minimized to obtain the m-th optimal temperature adjustment power P opt-im of the i-th heating zone; According to the target temperature T set , the target power P set , the current temperature T of each of the j heated zones j0 and the corresponding current power P j0 are calculated to obtain the m-th cost function C corresponding to each of the j heating zones jm , and then the m-th cost function C jm is minimized to obtain the m-th optimal temperature adjustment power P of each of the j heating zones opt-jm .

4. The control method of the semiconductor heating device according to claim 3, wherein, ， ； 。 5. The control method of the semiconductor heating device according to claim 1, wherein, ； where α is the temperature regulation rate correlation coefficient, is the thermal conductivity, and σ is the Stefan-Boltzmann constant.

6. The control method of the semiconductor heating device according to claim 1, wherein, In step S(m + n), the steps of performing the (m + n)-th prediction calculation to obtain the (m + n)-th optimal temperature adjustment powers of the i-th heating zone and each of the j heating zones include: According to the target temperature T set 、the target power P set 、the predicted temperature T im of the i-th heated zone and the corresponding predicted power P im are calculated to obtain the (m + n)-th cost function C i(m+n) corresponding to the i-th heating zone, and then the (m + n)-th cost function C i(m+n) is minimized to obtain the (m + n)-th optimal heating-up power P opt-i(m+n) of the i-th heating zone; According to the target temperature T set 、the target power P set 、the predicted temperature T jm of the j heated zones and the corresponding predicted power P jm are calculated to obtain the (m + n)-th cost function C j(m+n) corresponding to the j heating zones, and then the (m + n)-th cost function C j(m+n) is minimized to obtain the (m + n)-th optimal heating-up power P opt-j(m+n) for each of the j heating zones.

7. The control method of the semiconductor heating device according to claim 6, wherein, ， ； ， 。 8. The control method of the semiconductor heating device according to claim 1, characterized in that, The control instruction corresponding to the m-th optimal temperature adjustment power of the i-th heating zone is the first power control instruction, and the control instruction corresponding to the m-th optimal temperature adjustment power of one of the j heating zones is the second power control instruction. In step Sm, the steps of performing a correction calculation to obtain the system delay correction values of the i-th heating zone and each of the j heating zones include: Obtain and based on the issuance time t of the first power control instruction mi the real-time temperature-time correspondence relationship of the i-th heated area, and obtain the temperature T of the i-th heated area at the issuance time t mi corresponding thereto si ; Obtain and, based on the issuance time t of the second power control instruction mj , and the real-time temperature-time correspondence relationship of the heated area corresponding to one of the j heating zones, obtain the temperature T corresponding to the heated area at the issuance time t mj ; sj ; According to T si and T sj calculate to obtain the system delay correction value of the i-th heating zone , and obtain the system delay correction value of each heating zone among the j heating zones .

9. The control method of the semiconductor heating device according to claim 8, wherein, ； where, is the thermal conductivity and σ is the Stefan-Boltzmann constant.

10. The control method of the semiconductor heating device according to claim 1, characterized in that, Step S0 further includes controlling the semiconductor heating device to perform an initial temperature adjustment process to adjust the temperature of the i-th heating zone and the j heating zones, and obtaining the current temperature-related parameters of each of the i-th heated zone and the j heated zones.

11. The control method of the semiconductor heating device according to claim 10, characterized in that, The control instruction corresponding to the m-th optimal temperature control power of the i-th heating zone is the first power control instruction, and the control instruction corresponding to the m-th optimal temperature control power of one heating zone among the j heating zones is the second power control instruction; In the step Sm, the step of performing correction calculation to obtain the system delay correction value of each of the i-th heating zone and each of the j heating zones includes: Obtain and based on the issuance time of the first power control instruction , the real-time temperature-time correspondence relationship of the i-th heated zone, and the trend mutation time when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the real-time temperature-time correspondence relationship of the i-th heated zone , to obtain the system delay correction value D of the i-th heating zone si ; Obtain and based on the issuance time of the second power control instruction , the correspondence between the real-time temperature and time of one of the heating zones among the j heating zones, and the trend mutation time when the temperature adjustment rate first undergoes a trend mutation since the initial temperature adjustment process in the correspondence between the real-time temperature and time of one of the heating zones among the j heating zones , to obtain the system delay correction value D for each of the j heating zones sj .

12. The control method of the semiconductor heating device according to claim 11, wherein: ； Among them, in the correspondence relationship between the real-time temperature and time of the i-th heated area, the m-th temperature adjustment process ends at moment, and the temperature value corresponding to the time node obtained by subtracting moment by is , ; In the correspondence between the real-time temperature and time in one of the j heated zones, the m-th temperature adjustment process ends at moment, and the temperature value corresponding to the time node after moment for a duration of is , .

13. A control system of a semiconductor heating device, characterized in that, The semiconductor heating device includes at least three heating zones for generating heat, wherein the i-th heating zone is adjacent to the remaining j heating zones, j is a positive integer greater than or equal to 2, and the control system is configured to execute the control method of the semiconductor heating device according to any one of claims 1 to 12 to control the i-th heating zone and each heating zone among the j heating zones respectively.

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