Substrate processing system

Abstract

A system includes an atmospheric pressure transfer chamber, a vacuum processing chamber, one or more load interlocking units, a vacuum transfer chamber, a plurality of mounting portions, a first transfer mechanism, a second transfer mechanism, and a control portion. The plurality of mounting portions are provided in the atmospheric pressure transfer chamber. The plurality of mounting portions can detachably mount each of a plurality of storage portions. The control portion concurrently with the first transfer mechanism and the second transfer mechanism performs the following transfers: a transfer of a consumable part from the storage portion to the vacuum processing chamber via the atmospheric pressure transfer chamber and one of the one or more load interlocking units; and a transfer of the consumable part from the vacuum processing chamber via the vacuum transfer chamber and another of the one or more load interlocking units. According to the present invention, the replacement time of the consumable part in the vacuum processing chamber can be shortened, and thus the work efficiency of the substrate processing system can be improved.

Description

[0001] This application is a divisional application of a patent application with the application date of November 28, 2019, the application number of 201911193850.7, and the invention name of "Substrate processing system, conveying method, conveying program, and holding device". TECHNICAL FIELD

[0002] The present application relates to a substrate processing system, a conveying method, a conveying program, and a holding device. BACKGROUND

[0003] A plasma processing apparatus is known in which a substrate is placed on a stage provided inside a processing chamber to perform plasma processing. In such a plasma processing apparatus, there is a consumable component that is gradually consumed due to repeated plasma processing.

[0004] The consumable component is, for example, a focus ring provided at the outer periphery of a substrate placed on the stage. The focus ring is abraded by exposure to plasma and needs to be replaced periodically.

[0005] For example, Patent Literature 1 proposes a focus ring replacement method in which a focus ring is conveyed in and out without opening the processing chamber to the atmosphere. In addition, a technology for shortening the stop time of vacuum processing due to performing confirmation of the state of the surface portion of the substrate stage and replacement of the surface portion is proposed (Patent Literature 2). In addition, a container for replacing a consumable component is proposed (Patent Literature 3).

[0006] Prior Art Documents

[0007] Patent Literature

[0008] Patent Literature 1: Japanese Patent Application Publication No. 2018-10992

[0009] Patent Literature 2: Japanese Patent Application Publication No. 2012-216614

[0010] Patent Literature 3: Japanese Patent Application Publication No. 2017-98540 SUMMARY

[0011] Problems to be Solved by the Invention

[0012] The present application provides a technology for improving the work efficiency of a substrate processing system by shortening the replacement time of a consumable component in a vacuum processing chamber.

[0013] Technical Solution for Solving the Problem

[0014] The substrate processing system of one embodiment includes an atmospheric transfer chamber, a vacuum processing chamber, one or more load lock units, a vacuum transfer chamber, a plurality of mounting portions, a first transfer mechanism, a second transfer mechanism, and a control portion. The atmospheric transfer chamber is used to transfer substrates and consumables in an atmospheric atmosphere. The vacuum processing chamber is used to perform vacuum processing on the substrates. The one or more load lock units are provided between the atmospheric transfer chamber and the vacuum processing chamber for the substrates and the consumables to pass therethrough. The vacuum transfer chamber is provided between the vacuum processing chamber and the one or more load lock units and is used to transfer the substrates and the consumables in a reduced pressure atmosphere. The plurality of mounting portions are provided in the atmospheric transfer chamber and have ports through which the substrates or the consumables transferred between each of a plurality of storage portions for storing the substrates or the consumables and the atmospheric transfer chamber can pass. The plurality of mounting portions can detachably mount each of the plurality of storage portions. The first transfer mechanism transfers the substrates and the consumables between the one or more load lock units and the vacuum processing chamber via the vacuum transfer chamber. The second transfer mechanism transfers the substrates and the consumables between the plurality of storage portions and the one or more load lock units via the atmospheric transfer chamber. The control portion causes the first transfer mechanism and the second transfer mechanism to perform the following transfers in parallel: transfer of the consumables from the storage portions to the vacuum processing chamber via the atmospheric transfer chamber and one of the one or more load lock units; and transfer of the consumables from the vacuum processing chamber via the vacuum transfer chamber and another of the one or more load lock units.

[0015] Effects of Invention

[0016] According to the present application, the replacement time of the consumables in the vacuum processing chamber can be shortened, and thus the work efficiency of the substrate processing system can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 FIG. 1 is a schematic configuration view of a substrate processing system according to one embodiment.

[0018] Figure 2 FIG. 3 is a schematic configuration view of a processing assembly included in the substrate processing system according to one embodiment.

[0019] Figure 3 FIG. 5 is a perspective view for explaining the configuration of a susceptor shown in FIG. 4. Figure 2

[0020] Figure 4 FIG. 8 is a view for explaining a flow of a transfer process of consumables according to one embodiment.

[0021] Figure 5 FIG. 11 is a flowchart showing an example of a flow of a replacement timing notification in the substrate processing system according to one embodiment.

[0022] Figure 6 ​is a flowchart showing an example of a flow of setting of the FR FOUP in the substrate processing system of one embodiment.

[0023] Figure 7 is a flowchart showing an example of a flow of the FR FOUP take-out process in the substrate processing system of one embodiment.

[0024] Figure 8A is a flowchart showing an example of a flow of the change reservation process in the substrate processing system of one embodiment.

[0025] Figure 8B is a flowchart showing an example of a flow of the change reservation cancellation process in the substrate processing system of one embodiment.

[0026] Figure 9 is a flowchart showing an example of a flow of the change process in the substrate processing system of one embodiment.

[0027] Figure 10 is a flowchart showing an example of a flow of the change path securing process in the substrate processing system of one embodiment.

[0028] Figure 11 is a diagram for explaining the change execution process in the substrate processing system of one embodiment.

[0029] Figure 12 is a diagram for explaining the effect of reducing the downtime in the case where the focus ring is changed by the substrate processing system of one embodiment.

[0030] Figure 13A is a diagram for explaining the operation of the second lift pin at the time of the focus ring-in in the substrate processing system of one embodiment.

[0031] Figure 13B is a diagram for explaining the operation of the second lift pin at the time of the focus ring-out in the substrate processing system of one embodiment.

[0032] Figure 14A is a schematic top view showing an example of the configuration of the pick-up provided in the substrate processing system of one embodiment.

[0033] Figure 14B is a schematic front view of the pick-up shown in Figure 14A .

[0034] Figure 15A is a schematic top view showing a state where a wafer is held on the pick-up shown in Figure 14A .

[0035] Figure 15B is a view of the pick-up shown in Figure 15AA schematic front view of the pickup and the chip shown.

[0036] Figure 16A It means in Figure 14A A schematic top view showing the pickup maintaining the focus ring.

[0037] Figure 16B Viewed from a horizontal direction Figure 16A A schematic front view of the pickup and focus ring shown.

[0038] Figure 17 This is a diagram illustrating the configuration position of the third sensor in a substrate processing system according to one embodiment.

[0039] Figure 18A This is a schematic perspective view of the baffle of a gate valve according to one embodiment.

[0040] Figure 18B This is a schematic perspective view of an enlarged portion of a gate valve according to one embodiment.

[0041] Figure 18C This is a schematic perspective view showing the state in which the opening of a gate valve is blocked according to one embodiment.

[0042] Figure 19A This is a diagram illustrating the positional relationship between consumable components and sensors during transport in one embodiment.

[0043] Figure 19B yes Figure 19A The figure shows an example of the detection signal in the example.

[0044] Figure 20A It is a diagram used to illustrate the positional deviation of consumable parts during transportation.

[0045] Figure 20B It means Figure 20A The figure shows an example of the detection signal in the example.

[0046] Figure 21 This is a diagram showing the positional relationship between consumable components and sensors when four sensors are configured.

[0047] Figure 22 This is a diagram used to illustrate the method for calculating the positional deviation of consumable components.

[0048] Explanation of reference numerals in the attached figures

[0049] 1. Substrate Processing System

[0050] 10 Vacuum Delivery Chambers

[0051] 15VTM arm (first conveyor mechanism)

[0052] 17a First Pickup

[0053] 17b second pickup

[0054] 20 atmospheric pressure delivery chamber

[0055] 25 LM arm (second delivery mechanism)

[0056] 27a first pickup

[0057] 27b second pickup

[0058] 30 control device

[0059] 31 storage section

[0060] 32 processing section

[0061] 33 input / output interface

[0062] 34 display section

[0063] 60 first holding section

[0064] 70 second holding section

[0065] 220 baffle

[0066] 221 opening

[0067] 222 first protruding section

[0068] 223 second protruding section

[0069] 230 movable cover

[0070] 240 moving mechanism

[0071] LLM1, LLM2 load interlock unit

[0072] LP1 to LP5 load port (mounting section)

[0073] MS mapping sensor

[0074] PM1 to PM8 process module (vacuum processing chamber)

[0075] S1 to S16 first sensor

[0076] S17 to S18 second sensor

[0077] S20 to S27 third sensor

[0078] GV gate valve DETAILED DESCRIPTION

[0079] The disclosed embodiments will now be described in detail based on the accompanying drawings. Furthermore, these embodiments are not intended to be limiting. Additionally, the various embodiments can be appropriately combined without contradicting the processing content.

[0080] (Example of the configuration of the substrate processing system in the implementation method)

[0081] In one embodiment, the substrate processing system transports used consumable components from the vacuum processing chamber to the storage section, and unused consumable components from the storage section to the vacuum processing chamber. In one embodiment, the transport of used consumable components and the transport of unused consumable components are performed in parallel.

[0082] Here, consumable components refer, for example, to components that need to be replaced due to repeated plasma processing in a substrate processing system having multiple chambers (vacuum processing chambers) where plasma processing is performed under a reduced pressure atmosphere. A consumable component is, for example, a focusing ring disposed on a stage within the chamber. Besides the focusing ring, consumable components also include any components that can be fed into and removed from the chamber by means of a robotic arm or similar device. In the following description, a focusing ring will be used as an example of a consumable component to illustrate the implementation. Furthermore, in the following description, "vacuum" refers to a state where a space is filled with gas at a pressure lower than atmospheric pressure. That is, in the following description, "vacuum" includes a reduced pressure state or a negative pressure state. Additionally, in the following description, "atmospheric pressure" refers to a pressure approximately equal to atmospheric pressure.

[0083] Figure 1 This is a schematic diagram of a substrate processing system 1 according to one embodiment.

[0084] The substrate processing system 1 includes multiple processing components PM (PM1 to PM8), a vacuum transport chamber 10, multiple loading interlocking units LLM (LLM1, LLM2), an atmospheric pressure transport chamber 20, multiple loading ports LP (LP1 to LP5), and a control device 30.

[0085] In addition, Figure 1 In the example, this represents 8 processing units PM1 to PM8, 2 load interlock units LLM1 to LLM2, and 5 load ports LP1 to LP5. The number of processing units PM, load interlock units LLM, and load ports LP in the substrate processing system 1 is not limited to the numbers shown in the figure. Hereinafter, unless otherwise specified, the 8 processing units PM1 to PM8 will be collectively referred to as processing unit PM. Similarly, the 2 load interlock units LLM1 to LLM2 will be collectively referred to as load interlock units LLM. Likewise, the 5 load ports LP1 to LP5 will be collectively referred to as load ports LP. Furthermore, the substrate processing system 1 of this embodiment has at least 2 load interlock units LLM.

[0086] The processing module PM performs processing on a semiconductor substrate (hereinafter, wafer W) as a processing target under a reduced pressure atmosphere. The processing module PM is an example of a vacuum processing chamber. The processing module PM performs processing such as etching, film formation, and the like, for example. The processing module PM has a stage that supports the wafer W and a focus ring F that is arranged on the stage in a manner of surrounding the wafer W. In addition, the processing module PM includes a first lift pin (described later with reference to 172 of FIG. 2) that is arranged in a region of the stage on which the wafer W is placed and is liftable, and a second lift pin (described later with reference to 182 of FIG. 2) that is arranged in a region of the stage on which the focus ring FR is placed and is liftable. The first lift pin is raised to lift the wafer W from the stage. In addition, the second lift pin is raised to lift the focus ring FR from the stage. In processing of the wafer W, a reduced pressure atmosphere is maintained in the processing module PM. Figure 2 and Figure 3 Figure 2 and Figure 3 The first lift pin is raised to lift the wafer W from the stage. In addition, the second lift pin is raised to lift the focus ring FR from the stage. In processing of the wafer W, a reduced pressure atmosphere is maintained in the processing module PM.

[0087] The processing module PM is connected to the vacuum transfer chamber 10 via a gate valve GV that is openable and closable. The gate valve GV is in a closed state during processing of the wafer W in the processing module PM. The gate valve GV is opened when the processed wafer W is delivered from the processing module PM and when an unprocessed wafer W is delivered to the processing module PM. In addition, the gate valve GV is also opened when the focus ring FR is delivered to and from the processing module PM. The processing module PM is provided with a gas supply portion for supplying a prescribed gas and an exhaust portion that can be evacuated. Details of the processing module PM are described later.

[0088] The inside of the vacuum transfer chamber 10 can be maintained as a reduced pressure atmosphere. The wafer W is transferred to each processing module via the vacuum transfer chamber 10. In the example of FIG. 1, the vacuum transfer chamber 10 is in a substantially pentagonal shape in plan view, and the processing modules PM are arranged in a manner of surrounding the periphery of the vacuum transfer chamber 10 along four sides. The wafer W that has been processed in the processing module PM is transferred to the processing module PM that performs the next processing via the vacuum transfer chamber 10. The wafer W after all processing is completed is transferred to the load lock module LLM via the vacuum transfer chamber 10. The vacuum transfer chamber 10 has a gas supply portion and an exhaust portion that can be evacuated, which are not shown. Figure 1 In addition, a first transfer mechanism for transferring the wafer W and the focus ring FR (hereinafter, also referred to as a transfer object) is arranged in the vacuum transfer chamber 10. For example, the VTM (Vacuum Transfer Module) arm 15 shown in FIG. 2 is an example of the first transfer mechanism. This VTM arm 15 transfers the transfer object between the processing modules PM1 to PM8 and the load lock modules LLM1, LLM2.

[0089] Figure 1

[0090] ​​​Figure 1 The VTM arm 15 shown has a first arm 15a and a second arm 15b. The first arm 15a and the second arm 15b are mounted on a base 15c. The base 15c is capable of sliding on rails 16a, 16b in the longitudinal direction of the vacuum transfer chamber 10. The base 15c is moved within the vacuum transfer chamber 10, for example, by motor driving a screw that is screwed to the rails 16a, 16b. The first arm 15a and the second arm 15b are rotatably fixed to the base 15c. Further, at the front end of each of the first arm 15a and the second arm 15b, a substantially U-shaped first picker 17a and a second picker 17b are rotatably connected.

[0091] Further, the VTM arm 15 has a motor (not shown) for extending and retracting the first arm 15a and the second arm 15b, and a motor (not shown) for raising and lowering the first arm 15a and the second arm 15b.

[0092] Further, the vacuum transfer chamber 10 has first sensors S1 to S16 arranged corresponding to each of the processing modules PM. The first sensors S1 to S16 are grouped in two, and one group of sensors corresponds to one processing module PM. Each of the first sensors S1 to S16 is a sensor for detecting a positional deviation of the wafer W and the focus ring FR that are transferred to the corresponding processing module PM. The transfer position is corrected based on the detected position. The positional information of the wafer W and the focus ring FR detected by the first sensors S1 to S1 is sent to the control device 30. Each of the first sensors S1 to S16 has the same structure, and therefore, as a representative, the first sensors S1, S2 arranged in front of the processing module PM1 are described.

[0093] The first sensors S1, S2 are, for example, transmissive optical sensors having a light projecting portion and a light receiving portion disposed on the top plate side and the bottom plate side of the vacuum transfer chamber 10, respectively. The first sensors S1, S2 are disposed on the transfer path when the wafer W and the focus ring FR are transferred from the vacuum transfer chamber 10 to the processing component PM1. For example, the first sensors S1, S2 are disposed at a position between the light projecting portion and the light receiving portion of the first sensors S1, S2 through which at least a portion of the wafer W and the focus ring FR pass. The VTM arm 15 holds the wafer W so that the wafer W passes under the light projecting portion of the sensors S1, S2 when the wafer W is transferred to the processing component PM1. The light projecting portion positioned above the wafer W emits light, and the light receiving portion positioned below the wafer W receives the emitted light. The light receiving by the light receiving portion stops during the period when the wafer W is passing under the light projecting portion. The light receiving by the light receiving portion starts again when the wafer W has passed under the light projecting portion. Thus, based on the length of the period during which the light receiving by the first sensors S1, S2 stops, the positional deviation of the wafer W or the focus ring FR can be detected. The control device 30 corrects the position of the wafer W, i.e., the position of the VTM arm 15, based on the positional information sent from the first sensors S1, S2, and then transfers the wafer W or the focus ring FR to the processing component PM1.

[0094] In addition, the vacuum transfer chamber 10 has second sensors S17 to S18 disposed corresponding to each of the load lock units LLM. The second sensors S17 to S18 are disposed on the transfer path of the vacuum transfer chamber 10 at each of the load lock units LLM1, LLM2, respectively. In Figure 1 In the example shown in FIG. 6, one second sensor is disposed before one load lock unit LLM. The VTM arm 15 waits until the second sensor S17 or S18 detects the transfer object before the transfer object is transferred to the load lock unit LLM. In addition, in the case where the second sensor S17 (S18) does not detect the transfer object, the VTM arm 15 rotates the front end of the first picker 17a (17b) in the horizontal plane left and right in the transfer operation according to the instruction from the control device 30, and moves the transfer object to a position where the second sensor S17 (S18) can detect the transfer object. The VTM arm 15 starts the transfer to the load lock unit LLM of the predetermined transfer destination again when the second sensor S17 (S18) detects the transfer object.

[0095] The loading interlock unit LLM includes a stage for placing the transported material and support pins for raising and lowering the wafer W and the focusing ring FR. The structure of the support pins can be the same as that of the first and second lifting pins in the processing assembly PM, which will be described later. The loading interlock unit LLM includes an exhaust mechanism (not shown) such as a vacuum pump and a leak valve, which allows switching between atmospheric and depressurized atmospheres within the loading interlock unit LLM. The loading interlock unit LLM is arranged along one side of the vacuum transport chamber 10, where the processing assembly PM is not located. The loading interlock unit LLM and the vacuum transport chamber 10 are internally connected via a gate valve GV.

[0096] VTM arm 15 holds the conveyor belt lifted from the loading interlock unit LLM by the support pin and conveys it to the loading platform of the processing assembly PM. Additionally, VTM arm 15 holds the conveyor belt within the processing assembly PM by the first lifting pin (see 172). Figure 2 The wafer W, lifted by the rising of the VTM arm 15, is transported to the mounting stage within the loading interlock unit LLM. Additionally, the VTM arm 15 holds the processing assembly PM within the stage held by the second lifting pin (see 182). Figure 2 The focusing ring FR, lifted by the rising of the FR, is transported to the loading stage within the loading interlock unit LLM.

[0097] The loading interlock unit LLM is connected to the atmospheric pressure delivery chamber 20 on the opposite side of the side connected to the vacuum delivery chamber 10. The loading interlock unit LLM and the atmospheric pressure delivery chamber 20 are internally connected via a gate valve GV.

[0098] The atmospheric pressure delivery chamber 20 is maintained at atmospheric pressure. Figure 1 In this example, the atmospheric pressure conveying chamber 20 is roughly rectangular in shape when viewed from above. Multiple loading interlocking units (LLMs) are arranged side-by-side along one long side of the atmospheric pressure conveying chamber 20. Additionally, multiple loading ports (LPs) are arranged side-by-side along the other long side of the atmospheric pressure conveying chamber 20. A second conveying mechanism is configured within the atmospheric pressure conveying chamber 20 for conveying the conveyed material between the loading interlocking units (LLMs) and the loading ports (LPs). Figure 1 The LM (Loader Module) arm 25 shown is an example of the second conveying mechanism. The LM arm 25 has an arm 25a. The arm 25a is rotatably fixed to a base 25c. The base 25c is fixed near the loading port LP3. A generally U-shaped first pickup 27a and a second pickup 27b are rotatably connected to the front end of the arm 25a.

[0099] At least one of the first pickup 27a and the second pickup 27b has a mapping sensor MS (not shown) at its front end. For example, the mapping sensor MS is configured at both ends of the approximate U-shape of each of the first pickup 27a and the second pickup 27b. When the FOUP (Front Opening Unified Pod) is connected to the loading port LP (described later), the FOUP cover is open, and the mapping sensor MS performs mapping. That is, the mapping sensor MS detects the wafer W or the focus ring FR within the FOUP and sends the detection result to the control device 30. Furthermore, the wafer W and the focus ring FR have different configuration intervals and thicknesses when the FOUP is stored; therefore, the control device 30 switches the threshold of the mapping sensor MS according to the type of FOUP (detection object) (described later).

[0100] A third sensor, S20 to S27, is also installed inside the atmospheric pressure delivery chamber 20. The third sensors S20 to S27 detect the delivered wafer W and focusing ring FR. The third sensors S20 to S23 detect the material being transported between the loading interlock unit LLM and the atmospheric pressure delivery chamber 20. The third sensors S24 to S27 detect the material being transported between the atmospheric pressure delivery chamber 20 and the loading port LP. The third sensors S20 to S27 are positioned on the transport path of the LM arm 25 between the door of the loading port LP (described later) and the loading interlock unit LLM. The third sensors S20 to S27 are arranged in pairs before the loading interlock units LLM1 and LLM2, and the loading ports LP2 and LP4. The third sensors S20 to S27 can be the same transmissive photoelectric sensors as the first sensors S1 to S16. The third sensors S20 to S27 are capable of detecting both the wafer W and the focusing ring FR.

[0101] Furthermore, during the transport of the wafer W or the focusing ring FR, detection errors may occur in the first sensors S1-16, the second sensors S17 and 18, and the third sensors S20-S27. In this case, there is a possibility of malfunctions such as the transported item falling from the VTM arm 15 or the LM arm 25. Therefore, when a detection error occurs, the substrate processing system 1 interrupts the processing. Alternatively, in the event of a detection error, the substrate processing system 1 may not immediately interrupt the processing, but instead move the tip of the pickup of the VTM arm 15 or the LM arm 25, which is the target of the detection error, horizontally and perform a re-detection. If the re-detection result is another detection error, the substrate processing system 1 interrupts the processing. If the re-detection result is that the transported item is detected, the substrate processing system 1 continues processing.

[0102] exist Figure 1 In the example, the third sensor's ports corresponding to the configurations of loading ports LP1 to LP5 are only loading ports LP2 and LP4. Figure 1In the example of FIG. 1, the third sensor is provided only at a position corresponding to the load port LP to which the FOUP for the focus ring FR is set. In another example, the third sensor can be provided corresponding to all of the load ports LP.

[0103] The load port LP is formed so as to be capable of mounting a FOUP for housing a wafer W or a focus ring FR. The FOUP is a container capable of housing a wafer W or a focus ring FR. The FOUP has a lid capable of being opened and closed. When the FOUP is set in the load port LP, the lid of the FOUP and the door of the load port LP are engaged. Also, a lock of the lid of the FOUP is opened, and the lid of the FOUP is capable of being opened. In this state, the FOUP is opened by moving the lid of the FOUP together with the door of the load port LP by opening the door of the load port LP, and the inside of the FOUP and the normal pressure transfer chamber 20 communicate via the load port LP. The FOUP of the embodiment can be a wafer FOUP capable of housing a wafer W and a focus ring (FR) FOUP capable of housing a focus ring FR. The wafer FOUP is an example of the first storage portion, and the FR FOUP is an example of the second storage portion.

[0104] The wafer FOUP has a shelf-shaped housing portion corresponding to the number of wafers W to be housed. In addition, the FR FOUP is formed so as to be capable of housing a number of focus rings FR corresponding to the number of processing modules PM possessed by the substrate processing system 1. For example, when the processing modules PM to which the focus rings FR are attached are eight, the FR FOUP can house eight unused focus rings FR and eight used focus rings FR. In the eight layers of the upper housing portion, the focus rings FR before use can be housed, and in the eight layers of the lower housing portion, the used focus rings FR can be housed. Further, the used focus rings FR are housed in the lower portion in order to suppress particles adhering to the used focus rings FR from adhering to the focus rings FR before use. Further, the number of wafers W and focus rings FR that can be housed in the above-described FOUP is merely an example, and the FOUP can be configured to house any number of wafers W and focus rings FR.

[0105] The load port LP includes a first load port capable of mounting a wafer FOUP and a second load port capable of mounting an FR FOUP. In the example of FIG. 1, the load ports LP1, LP3, and LP5 are first load ports. In addition, the load ports LP2 and LP4 are second load ports. The first load port is an example of the first mounting portion, and the second load port is an example of the second mounting portion. Further, the second load port of the embodiment can mount either of a wafer FOUP and an FR FOUP. In addition, the FR FOUP can be mounted only at the time of replacement of the focus ring FR, or can be mounted at ordinary times. In another example, the second load port can also be singular. Figure 1 The load port LP includes a first load port capable of mounting a wafer FOUP and a second load port capable of mounting an FR FOUP. In the example of FIG. 1, the load ports LP1, LP3, and LP5 are first load ports. In addition, the load ports LP2 and LP4 are second load ports. The first load port is an example of the first mounting portion, and the second load port is an example of the second mounting portion. Further, the second load port of the embodiment can mount either of a wafer FOUP and an FR FOUP. In addition, the FR FOUP can be mounted only at the time of replacement of the focus ring FR, or can be mounted at ordinary times. In another example, the second load port can also be singular.

[0106] The load ports LP each include a reading section (not shown) for reading a carrier ID of the FOUP. The carrier ID is an identifier for identifying the kind of each FOUP or the like. In order to identify the FR-use FOUP and the wafer-use FOUP, a naming rule of the carrier ID can be set in advance in the substrate processing system 1. For example, a carrier ID starting with a prescribed character string is identified as the carrier ID of the FR-use FOUP, and a carrier ID starting with another prescribed character string is identified as the carrier ID of the wafer-use FOUP. For example, a carrier ID starting with "FR_" is set as the FR-use FOUP, and a carrier ID starting with "W_" is set as the wafer-use FOUP in the substrate processing system 1. The naming rule of the carrier ID is set as a default value, and can be set by an operator. When the FOUP is placed in the load port LP and is clamped, the reading section reads the carrier ID given to the FOUP. The substrate processing system 1 identifies whether each FOUP is the wafer-use FOUP or the FR-use FOUP based on the carrier ID. When the carrier ID is authenticated and the FOUP is connected to the load port LP, the lid of the FOUP is opened together with the door of the load port, and the wafer W or the focus ring FR housed in the FOUP is detected by the mapping sensor MS of the LM arm 25.

[0107] An aligner AU is arranged at one short side of the atmospheric transfer chamber 20. The aligner AU includes a rotary stage on which the wafer W is placed, and an optical sensor that optically detects the outer peripheral edge portion of the wafer W. The aligner AU detects, for example, the flatness and the notch of the wafer W, and performs alignment of the wafer W.

[0108] The processing module PM, the vacuum transfer chamber 10, the VTM arm 15, the load lock unit LLM, the atmospheric transfer chamber 20, the LM arm 25, the load port LP, and the aligner AU each configured as described above are connected to the control device 30, and are controlled by the control device 30.

[0109] The control device 30 is an information processing device that controls each portion of the substrate processing system 1. The specific structure and function of the control device 30 are not particularly limited. The control device 30 includes, for example, a storage section 31, a processing section 32, an input / output interface (IOI / F) 33, and a display section 34. The storage section 31 is, for example, any storage device such as a hard disk, an optical disk, a semiconductor storage element, or the like. The processing section 32 is, for example, a processor such as a CPU (Central Processing Unit), an MPU (Micro Processing Unit), or the like. The display section 34 is, for example, a functional section for displaying information such as a liquid crystal display screen, a touch panel, or the like.

[0110] The processing section 32 reads the program and the recipe stored in the storage section 31 to execute, and controls each section of the substrate processing system 1 via the input / output interface 33. In addition, the processing section 32 identifies the kind of the FOUP connected to each load port LP based on the carrier ID read by the reading section provided in the load port LP, and stores in the storage section 31. In addition, the processing section 32 receives the information of the wafer W and the focus ring FR in the FOUP detected by the mapping sensor MS, and stores in the storage section 31. In addition, the processing section 32 receives the contents of the processing being executed by the processing assembly PM, the progress status, and the like from the sensor (not shown) and the like provided in the processing assembly PM, and stores in the storage section 31. In addition, the control device 30 receives the notification of the detection error from the second sensor and the third sensor, and executes the processing of re-detection or processing stop. In addition, the control device 30 controls and executes the replacement timing notification processing, the FR-FOUP setting processing, the FR-FOUP taking-out processing, the replacement reservation processing, the replacement reservation cancel processing, and the replacement processing described later, respectively.

[0111] (Example of Configuration of Processing Assembly PM)

[0112] Figure 2 Fig. 1 is a schematic configuration view of an example of the processing assembly PM provided in the substrate processing system 1 according to an embodiment. Figure 2 The processing assembly PM shown in Fig. 1 is a parallel-plate type plasma processing device.

[0113] The processing assembly PM includes, for example, a processing chamber 102 having a cylindrical processing container formed of aluminum oxide subjected to surface anodization treatment (acid-resistant aluminum treatment). The processing chamber 102 is grounded. A substantially cylindrical stage 110 for placing the wafer W is provided at the bottom in the processing chamber 102. The stage 110 includes a plate-shaped insulator 112 made of ceramic or the like, and a pedestal 114 constituting a lower electrode provided on the insulator 112.

[0114] The stage 110 includes a pedestal temperature adjustment section 117 capable of adjusting the pedestal 114 to a prescribed temperature. The pedestal temperature adjustment section 117 is configured to circulate a temperature adjustment medium in a temperature adjustment medium chamber 118 provided in the pedestal 114, for example.

[0115] The pedestal 114 is formed with a convex substrate placing section at the upper center portion thereof, and the upper surface of the substrate placing section becomes a substrate placing surface 115, and the upper surface of the lower portion around the substrate placing section becomes a focus ring placing surface 116 for placing the focus ring FR. As shown in Fig. 2, the focus ring FR is placed on the focus ring placing surface 116, and the wafer W is placed on the substrate placing surface 115. Figure 2As shown, when an electrostatic chuck 120 is provided on the upper part of the substrate mounting portion, the upper surface of the electrostatic chuck 120 becomes the substrate mounting surface 115. The electrostatic chuck 120 is configured with electrodes 122 disposed between insulating materials. A DC voltage of, for example, 1.5 kV is applied to the electrostatic chuck 120 from a DC power supply (not shown) connected to the electrodes 122. As a result, the wafer W is electrostatically attracted to the electrostatic chuck 120. The substrate mounting portion is formed with a diameter smaller than that of the wafer W, and when the wafer W is mounted, the peripheral portion of the wafer W extends out from the substrate mounting portion.

[0116] A focusing ring FR is disposed on the upper periphery of the base 114 in such a way that it surrounds the wafer W placed on the substrate mounting surface 115 of the electrostatic chuck 120. The focusing ring FR is disposed on the focusing ring mounting surface 116 of the base 114.

[0117] Gas passages for supplying a heat-conducting medium (such as a back-side gas like He gas) to the back side of the wafer W placed on the substrate mounting surface 115 are formed in the insulator 112, the base 114, and the electrostatic chuck 120. Heat conduction between the base 114 and the wafer W is achieved through this heat-conducting medium, maintaining the wafer W at a specified temperature.

[0118] An upper electrode 130 is disposed above and opposite the base 114. The space formed between the upper electrode 130 and the base 114 becomes a plasma generation space. The upper electrode 130 is supported on the upper part of the processing chamber 102 via an insulating shielding member 131.

[0119] The upper electrode 130 mainly consists of an electrode plate 132 and an electrode support 134 that detachably supports it. The electrode plate 132 is formed of, for example, quartz, and the electrode support 134 is formed of, for example, a conductive material such as alumina with a surface treated with acid-resistant aluminum.

[0120] The electrode support 134 is provided with a processing gas supply section 140 for introducing processing gas from the processing gas supply source 142 into the processing chamber 102. The processing gas supply source 142 is connected to the gas inlet 143 of the electrode support 134 via a gas supply pipe 144.

[0121] Gas supply pipe 144, for example Figure 2 The mass flow controller (MFC) 146 and the on / off valve 148 are arranged sequentially from the upstream side. Alternatively, an FCS (Flow Control System) can be installed instead of the MFC. The processing gas supply source 142 supplies a fluorocarbon gas (C4F8) such as C4F8. x F y It is used as a processing gas for etching.

[0122] The processing gas supply source 142 supplies, for example, an etching gas used for plasma etching. Further, Figure 2 Only one processing gas supply system composed of the gas supply pipe 144, the on-off valve 148, the mass flow controller 146, the processing gas supply source 142, and the like is shown, but the processing chamber PM has a plurality of processing gas supply systems. For example, processing gases of CF4, O2, N2, CHF3, and the like can each be independently subjected to flow control and supplied into the processing chamber 102.

[0123] A substantially cylindrical gas diffusion chamber 135 is provided in the electrode support 134, and the processing gas introduced from the gas supply pipe 144 can be uniformly diffused. The bottom of the electrode support 134 and the electrode plate 132 are formed with a plurality of gas discharge holes 136 that discharge the processing gas from the gas diffusion chamber 135 into the processing chamber 102. The processing gas diffused in the gas diffusion chamber 135 can be uniformly discharged from the plurality of gas discharge holes 136 toward the plasma generation space. At this time, the upper electrode 130 also functions as a shower head for supplying the processing gas.

[0124] The upper electrode 130 has an electrode support temperature adjustment section 137 that can adjust the electrode support 134 to a prescribed temperature. The electrode support temperature adjustment section 137 is configured, for example, to circulate a temperature adjustment medium in a temperature adjustment medium chamber 138 provided in the electrode support 134.

[0125] The bottom of the processing chamber 102 is connected to an exhaust pipe 104, which is connected to an exhaust section 105. The exhaust section 105 has a vacuum pump such as a turbo molecular pump, and can adjust the processing chamber 102 to a prescribed reduced pressure atmosphere. In addition, a wafer W is supplied and discharged through a supply and discharge port 106 provided in the side wall of the processing chamber 102, and a gate valve 108 (corresponding to a GV) is provided in the supply and discharge port 106. The gate valve 108 is opened when the wafer W is supplied and discharged. Then, the wafer W is supplied and discharged through the supply and discharge port 106 by a transport arm or the like, not shown. Figure 1

[0126] The upper electrode 130 is connected to a first high-frequency power source 150, and a first matcher 152 is provided in the power supply line thereof. The first high-frequency power source 150 can output high-frequency electric power for plasma generation having a frequency in the range of 50 to 150 MHz. As described above, by applying electric power of a higher frequency to the upper electrode 130, a plasma in a very good dissociation state and high density can be formed in the processing chamber 102, and plasma processing under a lower pressure condition can be performed. The frequency of the output electric power of the first high-frequency power source 150 is preferably 50 to 80 MHz, and is typically adjusted to the frequency of 60 MHz shown or the vicinity thereof.

[0127] ​The pedestal 114, which is the lower electrode, is connected to the second high-frequency power source 160, and a second matching device 162 is provided in the power supply line thereof. The second high-frequency power source 160 is capable of outputting high-frequency electric power for biasing with a frequency in the range of several hundred kHz to several ten MHz. The frequency of the output electric power of the second high-frequency power source 160 is typically adjusted to 2 MHz or 13.56 MHz, etc.

[0128] Further, the pedestal 114 is connected to a high-pass filter (HPF) 164 that filters the high-frequency current flowing into the pedestal 114 from the first high-frequency power source 150, and the upper electrode 130 is connected to a low-pass filter (LPF) 154 that filters the high-frequency current flowing into the upper electrode 130 from the second high-frequency power source 160.

[0129] The processing components PM are connected to the control device 30 of the substrate processing system 1. The control device 30 controls each part of the processing components PM. The input / output interface 33 of the control device 30 includes a keyboard for inputting an instruction of an operator for managing the processing components PM, a display for visually displaying the operation status of the processing components PM, etc.

[0130] Further, the storage section 31 stores various processing programs executed by the processing components PM under the control of the control device 30, processing conditions (recipes) required for execution of the programs, etc. The above-mentioned processing conditions are summarized in a plurality of parameter values of control parameters, setting parameters, etc. that control each part of the processing components PM. Each processing condition has, for example, parameter values of a flow ratio of processing gases, a pressure in the processing chamber, high-frequency electric power, etc. Further, the above-mentioned programs and processing conditions can be stored in a hard disk or a semiconductor memory, and can also be installed in a prescribed position of the storage section 31 in a state of being stored in a portable computer-readable storage medium such as a CD-ROM, a DVD, etc.

[0131] The control device 30 reads out the desired program and processing conditions from the storage section 31 based on an instruction, etc. via the input / output interface 33, and controls each part thereby to execute the desired processing of the processing components PM. Further, the processing conditions can be edited by an operation from the input / output interface 33. Further, a separate control device is provided for each processing component PM, and the control devices and a host device communicate with each other to thereby control the entire substrate processing system 1.

[0132] (Example of lift pins and drive mechanism)

[0133] Further, the pedestal 114 of the processing component PM is provided with the first lift pins 172 that are liftable from the substrate placement surface 115, and the second lift pins 182 that are liftable from the focus ring placement surface 116, as shown in FIG. 1. Figure 3 Figure 3 is for explaining Figure 2 ​A perspective view of the base 114 is shown. Specifically, as shown in Figure 2 The first lift pins 172 are driven by the first drive mechanisms 170, and are capable of lifting the wafer W from the substrate placement surface 115. The second lift pins 182 are driven by the second drive mechanisms 180, and are capable of lifting the focus ring FR from the focus ring placement surface 116.

[0134] The first drive mechanisms 170 and the second drive mechanisms 180 are electric motors such as DC motors, stepping motors, linear motors, piezoelectric actuators, air drive mechanisms, and the like. The first drive mechanisms 170 and the second drive mechanisms 180 each have a driving accuracy suitable for the transport of the wafer W and the transport of the focus ring FR.

[0135] The insulator 112 that supports the base 114 of the processing module PM is formed in a ring shape, and the first lift pins 172 are provided so as to extend from the lower side of the base 114 surrounded by the insulator 112 to the vertical upper side, and are liftable from the substrate placement surface 115 that is the upper surface of the electrostatic chuck 120. Each of the first lift pins 172 is inserted into and passes through a hole portion formed in the base 114 and the electrostatic chuck 120, and is lifted from the substrate placement surface 115 by driving control of the first drive mechanisms 170, as shown in Figure 3 In addition, the first drive mechanisms 170 can also be connected to the ring-shaped base in which the first lift pins 172 are arranged at intervals with the upper portion and the like, and drive the first lift pins 172 via the base. The number of the first lift pins 172 is not limited to three. In addition, the positions of the first lift pins 172 can be positions that do not interfere with the VTM arm 15 at the time of ejection and insertion of the wafer W.

[0136] The second lift pins 182 are provided so as to extend from the lower side of the base 114 to the vertical upper side, and are liftable from the focus ring placement surface 116. Each of the second lift pins 182 is inserted into a hole portion formed in the focus ring placement surface 116 from the lower side of the base 114, and is lifted from the focus ring placement surface 116 by driving control of the second drive mechanisms 180, as shown in Figure 3 In addition, the second drive mechanisms 180 can also be connected to the ring-shaped base in which the second lift pins 182 are arranged at intervals with the upper portion and the like, and drive the second lift pins 182 via the base. In addition, the plurality of second drive mechanisms 180 can be configured so as to each drive one second lift pin 182. The number of the second lift pins 182 is not limited to three. The positions of the second lift pins 182 can be positions that do not interfere with the VTM arm 15 at the time of ejection and insertion of the focus ring FR. The base connected to such second drive mechanisms 180 is configured with a larger diameter than the base connected to the first drive mechanisms 170, and is arranged at a position further outward than the base connected to the first drive mechanisms 170. Thus, the first drive mechanisms 170 and the second drive mechanisms 180 do not interfere with each other, and are capable of independently lifting the first lift pins 172 and the second lift pins 182, respectively.

[0137] According to the first drive mechanism 170 configured in the above-described manner, the wafer W can be lifted from the electrostatic chuck 120 by raising each first lift pin 172. Also, according to the second drive mechanism 180, the focus ring FR can be lifted from the focus ring placement surface 116 by raising each second lift pin 182.

[0138] Further, in the example of the present embodiment, the focus ring FR is formed in one piece, but can be divided into two or more. For example, the inner diameter side, which is easily consumed, is separated from the outer diameter side and is configured by two members. In this case, only the inner focus ring can be lifted by the second lift pin 182 and replaced. Figure 2

[0139] (Pattern setting)

[0140] The substrate processing system 1 of the present embodiment having the above-described configuration can be set to the following patterns: (1) an access pattern of the load port LP, (2) a maintenance pattern of each section, and (3) a processing pattern of the processing module PM.

[0141] (1) Access pattern of load port LP

[0142] The access pattern is a pattern in which it is set whether to accept automatic setting of the FOUP to the load port LP. As the access pattern, two of a manual pattern and an automatic pattern are set. In the manual pattern, the substrate processing system 1 performs setting and taking out of the FOUP as a condition of an instruction input by an operator. In the automatic pattern, the substrate processing system 1 performs setting and taking out of the FOUP without an instruction input by the operator.

[0143] For example, in the manual pattern, the substrate processing system 1 does not accept setting and taking out of the FOUP by an overhead hoist transfer (OHT) of a top moving type. In the manual pattern, the substrate processing system 1 accepts setting and taking out of the FOUP by an automated guided vehicle (AGV) with an instruction input by the operator. On the other hand, in the automatic pattern, the substrate processing system 1 accepts setting and taking out of the FOUP by the OHT without an instruction input by the operator.

[0144] The manual pattern is a pattern selected in a case where the FOUP is set and taken out under the supervision of the operator. In the present embodiment, setting and taking out of the FR-use FOUP can be performed only when the manual pattern is selected.

[0145] (2) Maintenance pattern of each section

[0146] ​The maintenance mode is set in a case where the normal processing (processing of the product wafer W) of each section of the substrate processing system 1 is stopped to perform maintenance. The maintenance mode can be set uniformly for a group of components that act in cooperation. For example, the normal pressure transfer chamber 20 and the load ports LP1 to LP5 can all be set uniformly to either of the normal processing mode and the maintenance mode.

[0147] When set to the normal processing mode, each section of the substrate processing system 1 automatically acts based on a processing flow set in advance. On the other hand, when set to the maintenance mode, each section of the substrate processing system 1 acts in accordance with an input by the operator.

[0148] (3) Processing mode of the processing component PM

[0149] The processing mode of the processing component PM is a mode that specifies execution of processing such as plasma processing of the product wafer W. As the processing mode, two modes, a production mode and a non-production mode, can be set. When in the production mode, the substrate processing system 1 can perform plasma processing of the product wafer W in the processing component PM. On the other hand, when in the non-production mode, the substrate processing system 1 cannot perform plasma processing of the product wafer W in the processing component PM. The substrate processing system 1 of the present embodiment, at the time of execution of the replacement processing of the consumable component, causes the processing component PM in which the consumable component is disposed to shift to the non-production mode. After the consumable component is replaced, the processing component PM shifts to the production mode and again starts plasma processing of the product wafer W.

[0150] (Example of flow of the transfer processing of the embodiment)

[0151] Figure 4 is a view for explaining a flow of the transfer processing of the consumable component of an embodiment. In Figure 4 , the processing performed by the operator is displayed on the left side, and the processing performed by the substrate processing system 1 (control device 30) is displayed on the right side. Among them, in Figure 4 , the processing displayed as performed by the operator can be automatically performed by each section of the substrate processing system 1 as appropriate.

[0152] First, the substrate processing system 1 performs a replacement timing notification processing at the time of replacement of the consumable component (step S21, refer to Figure 5 ). For example, the substrate processing system 1 determines whether it is the replacement timing of the focus ring FR. Then, the substrate processing system 1, when determining that it is the replacement timing of the focus ring FR, transmits a notification that informs the replacement timing to the operator (step S22). For example, the substrate processing system 1 displays information indicating the approach of the replacement timing on the display section 34 of the control device 30.

[0153] The operator confirms whether the FR FOUP is set at the load port LP of the substrate processing system 1. In the case where the FR FOUP is not set, the operator performs a process for setting the FR FOUP (step S23, refer to Figure 5 ).

[0154] The substrate processing system 1 detects that the FR FOUP is set by the sensor and the reader, and stores that the setting of the FR FOUP is completed in the storage section 31 (step S24, refer to Figure 5 ). When the FR FOUP is set, the substrate processing system 1 notifies the operator that the replacement reservation of the focus ring FR is possible. For example, the substrate processing system 1 displays a screen for accepting the replacement reservation on the display section 34.

[0155] The operator performs a prescribed input to the substrate processing system 1 to perform the replacement reservation of the focus ring FR (step S25). The substrate processing system 1 stores information that the replacement reservation of the focus ring FR is completed in the storage section 31 according to the input of the operator (step S26). In addition, the substrate processing system 1 notifies the operator that the replacement reservation of the focus ring FR is currently in progress (step S27). For example, the substrate processing system 1 displays the information that the replacement reservation is in progress on the display section 34.

[0156] In addition, the substrate processing system 1 clears (resets) the count used for the notification of the replacement timing when the replacement reservation is performed (step S28). The clearing of the count can be performed according to the input of the operator (step S29), or can be automatically performed by the substrate processing system 1 when the replacement reservation is performed.

[0157] In addition, the substrate processing system 1 starts the replacement of the focus ring FR when a prescribed condition is satisfied (step S30). The substrate processing system 1 notifies the operator of the information that the replacement is in progress when the replacement of the focus ring FR is started (step S31). For example, the substrate processing system 1 displays the information that the replacement is in progress on the display section 34.

[0158] In addition, the substrate processing system 1 notifies the operator of the information that the replacement is completed when the replacement of the focus ring FR is completed (step S32) (step S33). For example, the substrate processing system 1 removes the information that the replacement is in progress which is displayed on the display section 34.

[0159] The operator performs the extraction process of the FR FOUP when the unused focus ring FR stored in the FR FOUP is not present (step S34). The substrate processing system 1 detects that the extraction process is performed, and ends the process (step S35). The above is the flow of the transport process of the consumable section in the substrate processing system 1. Furthermore, Figure 4 The flow of the process shown is an example, and can be performed in accordance with Figure 4The steps are executed in different order, and additional processing can be added.

[0160] (An example of a display screen)

[0161] The display section 34 of the substrate processing system 1 configured in the above-described manner displays the state of each processing assembly PM, and the like. The display section 34 displays, for example, a graphical user interface (GUI). The operator performs input operations while viewing the GUI displayed by the display section 34, and is able to set the processing of each section, the replacement timing of consumable parts, and the like.

[0162] The display section 34 displays the load ports LP1, LP3, and LP5, among the load ports LP1 to LP5, which are capable of mounting FOUPs for wafers, and the load ports LP2 and LP4, which are capable of mounting any of FOUPs for wafers and FRs, in a manner that is mutually recognizable.

[0163] The display section 34 also displays the load ports LP to which a FOUP for a wafer is connected and the load ports LP to which a FOUP for a wafer is not connected in a manner that is recognizable. The display section 34 also displays the load ports LP to which a FOUP for an FR is connected and the load ports LP to which a FOUP for an FR is not connected in a manner that is recognizable.

[0164] The display section 34 also displays the number and the storage position of wafers W housed in the FOUP for wafers connected to the load port LP in a manner that is recognizable. The display section 34 also displays the number of processed wafers W and the number of unprocessed wafers W, among the wafers W housed in the FOUP for wafers, in a manner that is recognizable, respectively. The display section 34 also displays the number of focus rings FR housed in the FOUP for FRs connected to the load port LP in a manner that is recognizable. The display section 34 also displays the number of unused focus rings FR and the number of used focus rings FR, among the focus rings FR housed in the FOUP for FRs, in a manner that is recognizable, respectively.

[0165] The display section 34 also displays the processing conditions of various modes, recipes, and the like set for the processing assembly PM. The display section 34 is able to switch the display screen according to the input of the operator. The operator is able to switch and display, according to the instruction input, an individual screen of each processing assembly PM and an overall screen that displays the state of the entire substrate processing system 1, and the like, in the display section 34.

[0166] (An example of the flow of the replacement timing notification processing)

[0167] Next, the details of each processing shown in FIG. 8 will be described. First, the replacement timing notification processing (step S21) will be described. Figure 4

[0168] ​As described above, the substrate processing system 1 of the embodiment judges whether or not the replacement timing of the focus ring FR is reached. Then, the substrate processing system 1 notifies the operator of the information that the replacement timing is reached, in the case where it is judged that the replacement timing is reached.

[0169] Here, the substrate processing system 1 judges whether or not the replacement timing of the focus ring FR is reached, based on a predetermined parameter. Then, the substrate processing system 1 judges that the replacement timing is reached, when the predetermined parameter reaches a threshold value.

[0170] For example, in the substrate processing system 1, the parameter for the judgment and the threshold value of the parameter or the like are stored in advance in the storage section 31 of the control device 30. The parameter is, for example, the number of times of the plasma processing performed by the processing assembly PM after the replacement of the focus ring FR, the length of the time of the plasma processing performed (discharge time), the number of wafers W processed, the exposure time of the focus ring FR in the plasma, or the like. For example, when the parameter is the number of times of the plasma processing performed after the replacement of the focus ring FR, the threshold value can be 4000 times. Further, the parameter and the threshold value are set to be different for each of a plurality of kinds of consumable parts. Further, the parameter and the threshold value can be set in correspondence with other maintenance items such as cleaning and maintenance for preventing the aging of the parts, in addition to the replacement of the consumable parts. Further, in the case where a plurality of processing assemblies PM have the same consumable parts, the different parameter and the threshold value can be set for each of the processing assemblies PM. The parameter and the threshold value can be set in advance in the substrate processing system 1, or can be set to be input by the operator. Further, the substrate processing system 1 can be configured to judge the execution timing of the maintenance without performing the maintenance in the substrate processing system 1, but to display the information corresponding to the notification received from an external device such as a host device.

[0171] Figure 5is a flowchart showing an example of a flow of the replacement timing notification in the substrate processing system 1 of one embodiment. First, the operator inputs parameters used in the replacement timing determination and threshold values of the parameters to the substrate processing system 1. The substrate processing system 1 sets the parameters and the threshold values in accordance with the input (step S51). Then, the substrate processing system 1 counts the number of processes of the parameter, e.g., the number of processes of the wafer W. The substrate processing system 1 determines whether the counted value reaches the set threshold value (step S52). In the case where it is determined that the threshold value is not reached (step S52, No), the substrate processing system 1 repeatedly performs the determination of step S52. On the other hand, in the case where it is determined that the threshold value is reached (step S52, Yes), the substrate processing system 1 transmits a notification of the content that the replacement timing has come (step S53). For example, the substrate processing system 1 displays the replacement timing notification on the display portion 34. Then, the substrate processing system 1 determines whether there is an instruction to reset the content of the count (step S54). In the case where it is determined that there is no instruction to reset the content (step S54, No), the substrate processing system 1 repeatedly performs the determination of step S54. On the other hand, in the case where it is determined that there is an instruction to reset the content (step S54, Yes), the substrate processing system 1 resets the count (step S55). Then, the substrate processing system 1 returns to step S52 to repeatedly perform the process.

[0172] (FR FOUP setup process example)

[0173] Next, an example of a flow of a process for setting an FR FOUP (steps S23, S24) will be described. Figure 4 Figure 6 is a flowchart showing an example of a flow of the FR FOUP setup in the substrate processing system 1 of one embodiment.

[0174] As described above, the substrate processing system 1 of one embodiment displays the load ports LP2, LP4 in which any of the wafer FOUP and the FR FOUP can be set and the load ports LP1, LP3, LP5 in which only the wafer FOUP can be set in a distinguishable manner. The display portion 34 displays the load ports LP in which the FR FOUP can be set and the load ports LP in which the wafer FOUP can be set, for example, in different colors.

[0175] First, the operator specifies a target load port (e.g., the load port LP4) in which the FR FOUP is to be set on the screen displayed on the display portion 34 of the substrate processing system 1. Then, the operator sets the access mode of the target load port LP4 to the manual mode (step S701).

[0176] ​When the operator sets the load port LP4 to the manual mode, the substrate processing system 1 detects the set mode (step S702), and changes the access mode stored in the storage section 31 corresponding to the load port LP4 to the manual mode.

[0177] Next, the operator, for example, operates the AGV, and places the FR-use FOUP in the load port LP4 as the target load port (step S703). Then, the operator inputs an instruction of the FR-use FOUP setting to the substrate processing system 1 (step S704). The substrate processing system 1 detects the instruction input (step S705).

[0178] The substrate processing system 1, upon detecting the instruction input, first latches the FR-use FOUP in the load port LP4 (step S706). When the FR-use FOUP is latched in the load port LP4, the reading section possessed by the load port LP4 reads the carrier ID of the FR-use FOUP. The carrier ID read by the reading section is sent to the processing section 32 of the control device 30, and the processing section 32 judges whether the carrier ID is the carrier ID of the FR-use FOUP, and authenticates the carrier ID (step S707). Since the load port LP4 is the load port for the FR-use FOUP, in the case where the carrier ID is the carrier ID of the wafer-use FOUP, the processing section 32 notifies the operator of the unsetting. For example, the processing section 32 causes the display section 34 to display the unsetting notification. On the other hand, in the case where the carrier ID after the reading is the carrier ID of the FR-use FOUP, the processing section 32 authenticates the carrier ID. The authenticated carrier ID is stored in the storage section 31 corresponding to the load port LP4. In addition, the processing section 32 sets the threshold value of the mapping sensor MS in accordance with the authenticated carrier ID.

[0179] When the carrier ID is authenticated, the substrate processing system 1 next connects the placed FR-use FOUP to the load port LP4 (step S708). After the connection of the FR-use FOUP is completed, the substrate processing system 1 opens the lid of the FR-use FOUP, and opens the door of the load port LP4, and makes the inside of the FR-use FOUP communicate with the inside of the normal-pressure transfer chamber 20 (step S709). When the lid of the FR-use FOUP is opened, the mapping sensor MS performs the mapping of the focus rings FR in the FR-use FOUP (step S710). The mapping sensor MS detects the positions and the number of the focus rings FR in the FR-use FOUP. At this time, the mapping sensor MS performs the detection based on the scale value (the reference value for the correction, the threshold value) suitable for the size of the focus rings FR. The mapping sensor MS notifies the control device 30 of the detected positions and the number of the focus rings FR. The control device 30 stores the notified positions and the number of the focus rings FR in the storage section 31. Then, the control device 30 causes the positions and the number of the focus rings FR to be displayed on the display section 34 to update the screen (step S711). Here, the FR-use FOUP setting processing is completed.

[0180] When the FR-use FOUP is set, the display section 34 updates the display screen according to each stage of the setting. The display section 34 displays the load port to which the FR-use FOUP is not set (first state) and the load port to which the FR-use FOUP is connected but the mapping of the focus ring FR is not completed (second state) in different manners. In addition, the display section 34 displays the load port of the first and second states and the load port to which the FR-use FOUP is connected and the mapping of the focus ring FR is completed (third state) in different manners.

[0181] (Example of flow of FR-use FOUP removal process)

[0182] Next, an example of the flow of the process when the FR-use FOUP is removed (steps S34, S35) will be described. Figure 4 Figure 7 is a flowchart showing an example of the flow of the FR-use FOUP removal process in the substrate processing system 1 according to the embodiment.

[0183] The operator first designates the target load port (for example, the load port LP4) on the display screen. Then, the operator inputs an instruction for the removal of the FR-use FOUP (step S901).

[0184] The substrate processing system 1 accepts the instruction from the operator (step S902). Upon accepting the instruction, the substrate processing system 1 first closes the lid of the FR-use FOUP that is the target (step S903). Then, the substrate processing system 1 releases the connection of the FR-use FOUP to the load port LP4 (step S904). Also, the substrate processing system 1 releases the locking of the FR-use FOUP (step S905). When the locking is released, the substrate processing system 1 notifies the operator of the completion of the removal of the FR-use FOUP (step S906). For example, the substrate processing system 1 displays the content of the completion of the removal on the display section 34. The operator receives the notification from the substrate processing system 1, operates the AGV, removes the FR-use FOUP from the load port LP4, and transports it (step S907). After the transportation is completed, the operator inputs a prescribed instruction to the substrate processing system 1 (step S908). Upon receiving the instruction input from the operator, the substrate processing system 1 stores the content of the completion of the removal of the FR-use FOUP in the storage section 31 and updates the screen (step S909). Thus, the removal of the FR-use FOUP is completed.

[0185] In addition, the display section 34 displays the load port LP in the removal process of the FOUP (fourth state) in a manner different from the first to third states.

[0186] (Variant 1 of FR-use FOUP setting process)

[0187] ​In the above description, the reading section of the load port LP reads the carrier ID of the FR-use FOUP, and the processing section 32 performs authentication and stores in the storage section 31. However, there is also a case where each FOUP is not previously given a carrier ID. Then, the substrate processing system 1 is configured in a manner that the operator can input the carrier ID at the time of setting of the FOUP.

[0188] For example, the storage section 31 previously stores information of a carrier ID input screen that accepts input of the operator. Figure 6 When the operator inputs an instruction to set the FOUP to the substrate processing system 1 after the start of the processing of the above, the substrate processing system 1 performs steps S705 to S706. After that, the substrate processing system 1 displays the carrier ID input screen without reading the carrier ID in step S707. The operator inputs information of specifying the object load port LP and the carrier ID of the FOUP in the setting processing of the object load port LP in the carrier ID input screen. In the case where the carrier ID input screen is input with the carrier ID, the processing section 32 recognizes whether the carrier ID is the ID of the FR-use FOUP or the ID of the wafer-use FOUP. The recognition result is stored in the storage section 31. As described above, in the processing of the above Figure 6 In the processing of the above, instead of step S707, the substrate processing system 1 performs display of the carrier ID input screen, input acceptance of the carrier ID, and authentication of the carrier ID. The processing after the input and authentication of the carrier ID is the same as the processing of the above Figure 6 In the processing of the above (after step S708), the same applies.

[0189] Further, in step S707, in the case where the substrate processing system 1 fails to read the carrier ID, the carrier ID input screen is displayed.

[0190] (Variation 2 of the setting processing of the FR-use FOUP)

[0191] In the above description, the substrate processing system 1 recognizes the FR-use FOUP and the wafer-use FOUP by the carrier ID. However, this is not limited, and the substrate processing system 1 can be configured to recognize the FR-use FOUP and the wafer-use FOUP based on input of the operator.

[0192] For example, as in the above variation 1, the storage section 31 previously stores information of an input screen that accepts input of the operator. Figure 6After processing begins, when the operator inputs the FOUP setting instruction into the substrate processing system (step S704), the substrate processing system 1 executes steps S705-706. Then, in step S707, the substrate processing system 1 displays the carrier ID input screen instead of reading the carrier ID. The input screen in Modification 2 differs from that in Modification 1; the operator specifies the type of FOUP. The operator inputs whether the FOUP specified in the settings is a wafer FOUP or an FR FOUP into the loading port on the input screen. Figure 6 In the processing, instead of step S707, the substrate processing system 1 performs the display of the FOUP type and carrier ID input screen and the acceptance of input content. Subsequent processing and... Figure 6 The processing (after step S708) is the same.

[0193] The input screen of Modification 2 can be displayed if the substrate processing system 1 fails to read the carrier ID. Additionally, the input screen of Modification 2 can also be displayed if the information entered in the carrier ID input screen of Modification 1 is invalid.

[0194] By configuring it in the above manner, even if a FOUP without a carrier ID is set or if the operator makes an erroneous input, the substrate processing system 1 can still attract the operator's attention and ensure that the processing is not delayed.

[0195] (An example of changing the appointment processing procedure)

[0196] Next, the process for scheduling a replacement of the focusing ring FR will be explained. Figure 4 An example of steps S25 to S27.

[0197] Here, "replacement reservation" refers to instructing the substrate processing system 1 to perform the replacement of consumable components such as the focus ring FR when the replacement time arrives. In this embodiment, the replacement of consumable components is performed by the substrate processing system 1 when a replacement reservation is made by the operator. Alternatively, the substrate processing system 1 may be configured to automatically start the replacement process when the replacement time arrives. In this case, the replacement reservation process is omitted.

[0198] (Change the executable time for appointment processing)

[0199] In this embodiment, the replacement reservation process can be performed after the FR FOUP for the loading port LP is set. If the FR FOUP is not set on the loading port LP, the substrate processing system 1 cannot perform the replacement reservation process. Alternatively, the substrate processing system 1 will display an error message if the operator attempts to perform the replacement reservation process.

[0200] Figure 8AFIG. 13 is a flowchart showing an example of a flow of a replacement reservation process in the substrate processing system 1 according to the embodiment. The operator first inputs an instruction to display a replacement reservation screen to the substrate processing system 1 (step S1301). The substrate processing system 1 displays the replacement reservation screen in accordance with the instruction input (step S1302). In a case where no FR-use FOUP is set, the substrate processing system 1 displays an error and ends the process. The replacement reservation screen displays, for example, consumables for which the replacement time has come, a list of processing components PM in which the consumables are arranged, and input buttons for the replacement reservation in correspondence with each other. In a case where the replacement reservation screen is displayed, the operator performs an input of the replacement reservation on the replacement reservation screen (step S1303). For example, the operator presses a prescribed button on the screen. The substrate processing system 1 displays a warning screen regarding the replacement reservation upon acceptance of the input by the operator (step S1304). The warning screen notifies, for example, the time at which the replacement process is to be performed. Upon the operator performing a confirmation input in the warning screen (step S1305), the substrate processing system 1 performs the replacement reservation. That is, the substrate processing system 1 stores the replacement reservation in the storage section 31 in correspondence with the processing component PM that is the object of the replacement reservation (step S1306). Then, the substrate processing system 1 displays information of "replacement reservation in progress" and the processing component PM that is the object in correspondence with each other on the display section 34 (step S1307). Thus, the replacement reservation process is completed.

[0201] Figure 8B FIG. 14 is a flowchart showing an example of a flow of a replacement reservation cancel process in the substrate processing system 1 according to the embodiment. The substrate processing system 1 performs a process of canceling the replacement reservation in accordance with an input by the operator after performing the replacement reservation.

[0202] The operator first inputs an instruction to display a replacement reservation cancel screen to the substrate processing system 1 (step S1308). The substrate processing system 1 displays the replacement reservation cancel screen in accordance with the input by the operator (step S1309). The replacement reservation cancel screen displays the load port LP in which the replacement reservation is in progress. In addition, the replacement reservation cancel screen displays an input button for the replacement reservation cancel in correspondence with the load port LP. For example, the replacement reservation cancel screen displays the processing component PM in which the replacement reservation is in progress, the consumable that is the object of the replacement, and the cancel button in correspondence with each other. The operator performs an input of the replacement reservation cancel in the replacement reservation cancel screen (step S1310). For example, the operator presses the cancel button in the replacement reservation cancel screen. The substrate processing system 1 deletes the replacement reservation that is stored in correspondence with the corresponding processing component PM and consumable from the storage section 31 in accordance with the input by the operator (step S1311). Then, the substrate processing system 1 deletes the information of "replacement reservation in progress" from the display (step S1312). Thus, the replacement reservation cancel process is completed.

[0203] (Example of a flow of a replacement process)

[0204] Next, an example of the flow of the replacement process of the consumable component (steps S30-S33) will be described. Figure 4 Figure 9 is a flowchart showing an example of the flow of the replacement process in the substrate processing system 1 of one embodiment.

[0205] In a case where the replacement reservation is stored in the storage section 31, first, the substrate processing system 1 detects the state of the processing component PM that becomes the target. During processing is being performed in the target processing component PM, the substrate processing system 1 makes the execution of the replacement process stand by. When the processing in the target processing component PM ends and becomes an idle state (step S1501), the substrate processing system 1 changes the mode of the target processing component PM to the non-production mode (step S1502). Then, the substrate processing system 1 stores the change of the mode of the target processing component PM in the storage section 31 (step S1503). The substrate processing system 1 changes the display of "replacement reservation" displayed on the display section 34 to "replacement in progress" (step S1504). The substrate processing system 1 performs the process for securing the replacement path (step S1505). The details of the process for securing the replacement path will be described later. Then, the substrate processing system 1 performs the replacement (step S1506). In the replacement performed in step S1506, the substrate processing system 1 performs the transport of the used focus ring FR from the processing component PM and the transport of the unused focus ring FR from the FR FOUP in parallel. After the replacement is completed, the substrate processing system 1 changes the mode of the target processing component PM to the production mode (step S1507). Then, the substrate processing system 1 stores the change of the mode of the target processing component PM in the storage section 31 (step S1508). The substrate processing system 1 deletes the display of "replacement in progress" displayed on the display section 34 (step S1509). Thus, the replacement process ends. Figure 10

[0206] (Process for securing replacement path)

[0207] The substrate processing system 1 secures the replacement path in the vacuum transport chamber 10, the load lock unit LLM, and the normal-pressure transport chamber 20 before starting the replacement of the focus ring FR (step S1505). Figure 9 Figure 10 is a flowchart showing the flow of the replacement path securing process in the substrate processing system 1 of one embodiment.

[0208] ​​​First, the substrate processing system 1 determines whether there is a wafer W on the conveyance path (step S1101). The conveyance path refers to the inside of the vacuum conveyance chamber 10, the load lock chamber LLM, and the atmospheric pressure conveyance chamber 20. The substrate processing system 1 determines whether there is a wafer W under processing in the processing module PM in the case where it is determined that there is no wafer W or focus ring FR on the conveyance path (step S1101, No). In the case where it is determined that there is a wafer W under processing (step S1102, Yes), the substrate processing system 1 stands by for the start of the next step to perform the division of processing at the end of processing in the processing module PM (step S1103). For example, the substrate processing system 1 stands by for the wafer W that has completed processing in the processing module PM from the end of processing until the replacement processing is completed. Then, the substrate processing system 1 performs the replacement of the focus ring FR (step S1104). On the other hand, in the case where it is determined that there is no wafer W under processing (step S1102, No), the substrate processing system 1 performs the replacement of the focus ring FR (step S1104).

[0209] On the other hand, in the case where it is determined that there is a wafer W on the conveyance path (step S1101, Yes), the substrate processing system 1 determines whether the wafer W is a pre-processing wafer (step S1105). In the case where it is determined that it is a pre-processing wafer (step S1105, Yes), the substrate processing system 1 conveys the wafer W to the processing module PM that performs processing (step S1106).

[0210] Returning to step S1105, in the case where it is determined that it is a post-processing wafer (step S1105, No), the substrate processing system 1 determines whether the processing of the wafer W is completed (step S1107). In the case where it is determined that it is completed (step S1107, Yes), the substrate processing system 1 returns the wafer W to the wafer FOUP that stores the wafer W (step S1108). On the other hand, in the case where it is determined that it is not completed (step S1107, No), the substrate processing system 1 conveys the wafer to the processing module PM that performs the next processing (step S1109). Then, the processing can be performed. After steps S1106, S1108, and S1109, the processing proceeds to step S1104, and the substrate processing system 1 performs the replacement.

[0211] Further, in the case where it is determined that the wafer W is a post-processing wafer (step S1105, No), the substrate processing system 1 determines whether the processing of the wafer W is completed (step S1107). In the case where it is determined that it is completed (step S1107, Yes), the substrate processing system 1 returns the wafer W to the wafer FOUP that stores the wafer W (step S1108). On the other hand, in the case where it is determined that it is not completed (step S1107, No), the substrate processing system 1 conveys the wafer to the processing module PM that performs the next processing (step S1109). Then, the processing can be performed. After steps S1106, S1108, and S1109, the processing proceeds to step S1104, and the substrate processing system 1 performs the replacement. Figure 10In the example, the wafer W before processing is once delivered from the FOUP without returning the wafer FOUP to the processing component PM to which the wafer W is delivered to the delivery destination (see step S1106). However, in a case where the processing efficiency is higher in returning the wafer FOUP, it is also possible to be configured to return the wafer W before processing to the wafer FOUP. In addition, in a case where the wafer W before processing is delivered to the processing component PM and the gate valve GV is closed, the processing of the wafer W is executed in the processing component PM in the replacement of the focus ring FR. In addition, in a case where the processing of the wafer W is already executed in the processing component PM at the time of ensuring the replacement path, the processing can also be continued in the replacement of the focus ring FR. That is, the delivery and delivery of the focus ring FR in the vacuum processing chamber (processing component PM) to which the focus ring FR is delivered and delivered and the vacuum processing of the wafer W in the vacuum processing chamber other than the delivery and delivery object can be executed in parallel.

[0212] In addition, it is also possible to stand by until the temperature of the susceptor 114 (lower electrode) reaches a predetermined temperature before the step S1104 of the example. Figure 10 The processing component PM becomes high temperature at the time of plasma processing of the wafer W, and thus, even in a case where the delivery path can be ensured, there is a case where the focus ring FR in the processing component PM is high temperature. In a case where the focus ring FR is high temperature, the focus ring FR can come into contact with the electrostatic chuck 120 due to thermal expansion at the time of lifting the focus ring FR from the susceptor 114. In addition, the VTM arm 15 and the LM arm 25 are likely to slip at the time of holding and delivering when the focus ring FR is high temperature. Thus, in a case where the temperature of the processing component PM is high, it is possible to prevent the focus ring FR from being damaged and the wafer W from being damaged due to the focus ring FR and the electrostatic chuck 120 coming into contact with each other. Figure 10 Thus, in the example, it is possible to detect whether the temperature of the processing component PM is a predetermined temperature (room temperature, for example, a temperature within a range of 20°C ± 15°C) before the step S1104 of the example and stand by until the temperature becomes the predetermined temperature.

[0213] (Replacement execution processing)

[0214] Figure 11 is a view for explaining the replacement in the substrate processing system 1 of an embodiment. The substrate processing system 1 executes the replacement (step S1506) of the example when the path for the replacement of the focus ring FR can be ensured. In the embodiment, the substrate processing system 1 executes the delivery of the used focus ring FR and the delivery of the unused focus ring FR in parallel at the time of replacement. In the example, the used focus ring FR arranged in the processing component PM1 is replaced with the unused focus ring FR arranged in the FR FOUP of the load port LP4. Figure 9 Figure 11 In this case, the substrate processing system 1 first executes the delivery of the used focus ring FR to the FR FOUP of the load port LP4 (step S1502) and the delivery of the unused focus ring FR to the processing component PM1 (step S1504).

[0215] In this case, the substrate processing system 1 first executes the delivery of the used focus ring FR to the FR FOUP of the load port LP4 (step S1502) and the delivery of the unused focus ring FR to the processing component PM1 (step S1504). Figure 9 ​S1501 to S1505, the replacement path is secured. When the replacement path is secured, the substrate processing system 1 causes the VTM arm 15 to operate to hold the focus ring FR in the processing module PM. On the other hand, the substrate processing system 1 causes the LM arm 25 to hold the focus ring FR in the FR-use FOUP. Then, the substrate processing system 1 concurrently performs the transport of the used focus ring FR by the VTM arm 15 (1) and the transport of the unused focus ring FR by the LM arm 25 (2). The used focus ring FR is transported to the load lock module LLM2 (3). The substrate processing system 1 opens the load lock module LLM2 to which the used focus ring FR is transported to the atmosphere. On the other hand, the unused focus ring FR is transported to the load lock module LLM1 (4). The substrate processing system 1 performs evacuation of the load lock module LLM1 to which the unused focus ring FR is transported. The substrate processing system 1 further causes the VTM arm 15 to hold the unused focus ring FR placed in the load lock module LLM1. On the other hand, the substrate processing system 1 causes the LM arm 25 to hold the used focus ring FR placed in the load lock module LLM2. Then, the substrate processing system 1 concurrently performs the transport of the used focus ring FR by the LM arm 25 (5) and the transport of the unused focus ring FR by the VTM arm 15 (6). In this way, the unused focus ring FR is transported into the processing module PM1. In addition, the used focus ring FR is transported into the FR-use FOUP. Further, in the replacement, the transport of the product wafer W is not performed. Figure 11 Figure 11 Figure 11 Figure 11 Figure 11 Figure 11

[0216] Figure 12 is a view for explaining the effect of reduction in downtime in the case where the focus ring FR is replaced by the substrate processing system 1 according to an embodiment.

[0217] Figure 12 ​​​​​​An example of the time required when the used focus ring FR and the unused focus ring FR are transported respectively is shown. The time required for the LM arm 25 to grip the focus ring FR housed in the FR FOUP is about 25 seconds. Thereafter, the time required for the LM arm to place the focus ring FR in the load lock unit LLM is about 25 seconds. Also, the time required for the gate valve of the load lock unit LLM to be closed to perform vacuuming is about 10 seconds. Then, the time required for the VTM arm 15 to grip the focus ring FR from the load lock unit LLM is about 25 seconds. Also, the time required for the VTM arm 15 to place the griped focus ring FR in the processing module PM is about 25 seconds. Thereafter, the time required for the 2nd lift pin 182 that supports the focus ring FR placed in the processing module PM to be lowered to place the focus ring FR in the prescribed position and for the gate valve GV to be closed is about 10 seconds. In addition, the standby time required for the load lock unit LLM to continuously operate is about 20 seconds. Thus, the time required for the focus ring FR to be transported from the FOUP to the processing module PM is about 140 seconds.

[0218] On the other hand, the time required when the used focus ring FR is transported from the processing module PM to the FOUP is as follows. First, the time required for the VTM arm 15 to grip the focus ring FR in the processing module PM is about 25 seconds. Then, the time required for the VTM arm 15 to place the griped focus ring FR in the load lock unit LLM is about 25 seconds. Then, the time required for the load lock unit LLM in which the focus ring FR is placed to be depressurized to the atmospheric atmosphere is about 10 seconds. After the load lock unit LLM becomes the atmospheric atmosphere, the gate valve on the side of the normal pressure transport chamber 20 of the load lock unit LLM is opened. Then, the time required for the LM arm 25 to grip the focus ring FR from the load lock unit LLM is about 25 seconds. The LM arm 25 transports the griped focus ring FR to the load port LP and places it in the FOUP. This process requires about 25 seconds. In addition, the standby time required for the load lock unit LLM to continuously operate is about 20 seconds. Thus, the time required for the used focus ring FR to be recovered is about 130 seconds.

[0219] If the recovery process of the used focus ring FR is performed after the above replacement process, and the unused focus ring FR is transported into the processing module PM, the time required for the process is about 140 seconds + about 130 seconds = about 270 seconds. In this regard, as in the present embodiment, when the recovery of the used focus ring FR and the transportation of the unused focus ring FR are performed in parallel, the replacement process can be completed in about 140 seconds. Thus, the substrate processing system 1 of the present embodiment can greatly shorten the downtime caused by the replacement of the consumable parts.

[0220] In addition, the reduced pressure state in the vacuum transfer chamber 10 is maintained during the exchange, and thus processing can continue in the process modules PM other than the process module PM that is the subject of the exchange processing. For example, when the time required for one process in the process module PM is 140 seconds or more, the exchange of the consumable parts can be performed without stopping the processing in the process module PM that is not the subject of the exchange processing. In addition, when the time required for one process in the process module PM is less than 140 seconds, the processed wafer W is left in the process module PM. Thus, contamination and the like due to the simultaneous presence of the product wafer W and the focus ring FR in the vacuum transfer chamber 10 can be prevented.

[0221] (Setting of parameters at the time of transfer during exchange processing)

[0222] The substrate processing system 1 of the embodiment changes the control method of the VTM arm 15, the LM arm 25, the first lift pin 172, the second lift pin 182, the support pin, and the like in accordance with the sizes and shapes of the wafer W and the focus ring FR at the time of transfer of the wafer W and the focus ring FR. For example, the substrate processing system 1 changes the following parameters. That is, (1) the drive speed of the VTM arm 15 and the LM arm 25, and (2) the drive speed of the second lift pin 182 in the process module PM.

[0223] (1) Drive speed of VTM arm 15 and LM arm 25

[0224] The VTM arm 15 and the LM arm 25 of the substrate processing system 1 are adjusted to be able to suit the transfer of the wafer W at the time of processing of the usual product wafer W. In the exchange, the VTM arm 15 and the LM arm 25 are adjusted to be able to suit the transfer of the focus ring FR. Thus, before the start of the exchange, the substrate processing system 1 switches the drive speed of the VTM arm 15 and the LM arm 25.

[0225] For example, the substrate processing system 1 switches the drive speed of the VTM arm 15 and the LM arm 25 to a speed different from the drive speed at the time of processing of the usual product wafer W at the start of the exchange (at the start of step S1506 of FIG. 15). Figure 9 For example, the substrate processing system 1 can switch the drive speed of the VTM arm 15 and the LM arm to a speed lower than the drive speed at the time of wafer W transfer. This is because the focus ring FR can easily cause a positional shift on the VTM arm 15 and the LM arm 25 because the area held in a ring shape is small compared to the wafer W. For example, the drive speed of the VTM arm 15 and the LM arm 25 that can be set in advance is set in advance in the storage section 31 of the substrate processing system 1. Then, the substrate processing system 1 is configured to be able to switch the drive speed at the time of exchange processing and at the time of transfer of the usual product wafer W. In addition, the drive speed can be manually set by an operator.

[0226] (2) Drive speed of second lift pin in process module PM

[0227] Additionally, the substrate processing system 1 sets the drive speed of the second lifting pin 182 within the processing component PM to be suitable for the focus ring FR. For example, the substrate processing system 1 learns and stores the drive speed of the second lifting pin 182 in advance through machine learning. Figure 13A This is a diagram illustrating the operation of the second lifting pin 182 when the focusing ring FR is fed into the substrate processing system 1 according to one embodiment. Figure 13B This is a diagram illustrating the operation of the second lifting pin 182 when the focus ring FR is delivered in a substrate processing system 1 according to one embodiment.

[0228] Before performing each process, the substrate processing system 1 performs mechanical learning on the first and second lifting pins 172 and 182 and the support pin. Then, the substrate processing system 1 sets, for example, the maximum speed, minimum speed and pin rise delay of the second lifting pin 182 in the processing component PM when receiving the focus ring FR, and stores them in the storage unit 31.

[0229] The operation of the second lifting pin 182 during the insertion of the focus ring FR will be explained. The second lifting pin 182 is housed within the base 114 and moves up and down during the insertion and removal of the focus ring FR. Here, the position of the upper surface of the base 114 is referred to as the first height H1, and the position when the focus ring FR is transported using the VTM arm 15 is referred to as the second height H2.

[0230] Additionally, the area near the base 114 within the distance from the first height H1 to the second height H2 is referred to as range R1, and the area near the conveying position is referred to as range R2 (see reference). Figure 13A Here, "nearby" refers to a range within a specified distance in the vertical direction, such as 0.5 mm. This specified distance is the distance used to adjust the impact when the focusing ring FR contacts the second lifting pin 182, or when the focusing ring FR contacts the VTM arm 15. For example, in... Figure 13A In the example, the range R1 refers to the range within a specified distance upwards from the upper surface of the base 114. Specifically, the range R1 can also be the range within a specified distance downwards vertically from the upper surface of the base 114. Furthermore, in... Figure 13A In the example, range R2 refers to the range within a specified distance vertically downwards from the conveying height H2 of the focusing ring FR. However, range R2 can also be the range within a specified distance vertically downwards from the second height H2. The range between the first height H1 and the second height H2, excluding ranges R1 and R2, is referred to as range R3.

[0231] The second lift pin 182 is housed in the base 114 when no in-out feeding is performed, and the top thereof is located at the first height Hl or below the height Hl. At the in-feeding of the focus ring FR, the second lift pin 182 is driven by the second drive mechanism 180 to protrude from the base 114 and rise to the third height H3 which is lower than the second height H2 (refer to Figure 13A ). Then, the VTM arm 15 places the focus ring FR on the pickup (17a or 17b) and feeds the process module PM while being held at the second height H2. When the focus ring FR placed on the VTM arm 15 reaches the base 114, the second lift pin 182 rises to the second height H2. At this time, the second lift pin 182 starts rising after waiting for a prescribed time until the VTM arm 15 stops operating and the swing of the focus ring FR converges. This waiting time is called pin rise delay. Then, the second lift pin 182 receives the focus ring FR at the second height H2. After the reception, the second lift pin 182 descends, and the focus ring FR is placed on the base 114.

[0232] The substrate processing system 1 switches the speed of the second lift pin 182 at the in-feeding of the focus ring FR to a lower speed than the ranges Rl, R3 at the time of rising and to a lower speed than the ranges R2, R3 at the time of descending in the range Rl. This is to reduce the impact at the time of contact of the second lift pin 182 with the focus ring FR and to prevent damage to the focus ring FR. In the example of Figure 13A , the range Rl is set to be higher than the upper surface of the base 114, but it can also be set in both directions above and below the upper surface of the base 114. Also, the range R2 can be set in both directions above and below the second height H2.

[0233] Next, the action of the second lift pin 182 at the out-feeding of the focus ring FR is described with reference to Figure 13B . In Figure 13B , a prescribed distance in the vertical direction below the upper surface (Hl) of the base 114 is set as the range R4, and a prescribed distance in the vertical direction above the second height H2 is set as the range R6. Also, the portion in the range between the second height H2 and the fourth height H4 which is not included in the range R6 is set as the range R5. Further, the values of the prescribed distances and the ranges are set as in the above Figure 13A .

[0234] At the time of the delivery of the focus ring FR, the 2nd lift pin 182 is first raised to the 1st height Hl. Then, when the top of the 2nd lift pin 182 comes into abutment with the focus ring FR, the 2nd lift pin 182 supports the focus ring FR and is raised to the 4th height H4. The 4th height H4 is higher than the 2nd height H2 at which the focus ring FR is delivered in the vertical direction. With the 2nd lift pin 182 holding the focus ring FR at the 4th height H4, the pickup (17a or 17b) of the VTM arm 15 enters the process module PM and stops below the focus ring FR. At this time, the height of the pickup of the VTM arm 15 is the 2nd height H2. As in the case of the delivery, after a prescribed time elapses while the wobble of the VTM arm 15 is converging, the 2nd lift pin 182 is lowered, and the VTM arm 15 receives the focus ring FR supported on the 2nd lift pin 182. The VTM arm 15 moves from the process module PM to the vacuum transfer chamber 10 while holding the focus ring FR, and delivers the focus ring FR.

[0235] The substrate processing system 1 switches the drive speed of the 2nd lift pin 182 at the time of the delivery of the focus ring FR to a lower speed than the ranges R5 and R6 in the range R4 at the time of the raising and to a lower speed than the range R4 and R5 in the range R6 at the time of the lowering. For example, the substrate processing system 1 sets the drive speed of the 2nd lift pin to the 1st speed in the range R4 at the time of the raising and to the 2nd speed which is higher than the 1st speed in the ranges R5 and R6 and in the range other than the ranges R4, R5 and R6. Also, at the time of the lowering, the substrate processing system 1 sets the 1st speed in the range R6 and the 2nd speed which is higher than the 1st speed in the ranges R4 and R5 and in the range other than the ranges R4, R5 and R6.

[0236] That is, the substrate processing system 1 switches the drive speed of the 2nd lift pin 182 to the 1st speed which is low during the period from just before the 2nd lift pin 182 comes into contact with the focus ring FR to the contact. Also, the substrate processing system 1 switches to the 1st speed which is low during the period from just before the focus ring FR supported by the 2nd lift pin 182 comes into contact with the susceptor 114 and the VTM arm 15 to the completion of the placement. The substrate processing system 1 drives the 2nd lift pin 182 at the 2nd speed which is high in the range where the focus ring FR does not come into contact with other components.

[0237] Therefore, the substrate processing system 1 sets the 1st speed, the 2nd speed and the standby time (pin raising delay) of the 2nd lift pin 182 in advance by the mechanical learning and stores them. For example, the substrate processing system 1 sets the 1st speed and the 2nd speed in the range of 1 to 15 mm / sec. Also, for example, the substrate processing system 1 sets the standby time of the 2nd lift pin 182 in the range of 0.0 to 60.0 seconds.

[0238] The substrate processing system 1 can also set the drive speed of the support pins in the load lock unit LLM as with the second lift pin 182. For example, the drive speed of the support pins can be set in a range of 1 to 1700 mm / sec.

[0239] (Specification of the transport path)

[0240] In the present embodiment, as described above, the transport of the used focus ring FR and the transport of the unused focus ring FR are performed in parallel. Therefore, the substrate processing system 1 includes at least two load lock units LLM. Then, the substrate processing system 1 uses one load lock unit (e.g., LLM1) for the transport of the used focus ring FR and another load lock unit (e.g., LLM2) for the transport of the unused focus ring FR.

[0241] Also, in order to improve the transport accuracy, as the path for transporting the unused focus ring FR, the pickers of the VTM arm 15 and the LM arm 25 can be specified. The transport accuracy refers to the accuracy and stability of the position of the focus ring FR during transport. When the transport accuracy is high, the positional deviation of the focus ring FR from the designed transport path during actual transport is small, and when the transport accuracy is low, the positional deviation of the focus ring FR from the designed transport path during actual transport is large. Also, when the transport accuracy is high, the position of the focus ring FR varies little each time of transport, and when the transport accuracy is low, the position of the focus ring FR varies greatly each time of transport. For example, as the transport path of the unused focus ring FR, the substrate processing system 1 specifies the first picker 17a of the VTM arm 15 and the first picker 27a of the LM arm 25. Also, as the transport path of the unused focus ring FR, the substrate processing system 1 specifies the load lock unit LLM1.

[0242] Also, as the transport path of the used focus ring FR, the substrate processing system 1 specifies the second picker 17b of the VTM arm 15 and the second picker 27b of the LM arm 25. Also, as the transport path of the used focus ring FR, the substrate processing system 1 specifies the load lock unit LLM2. The substrate processing system 1 stores the specified transport paths in the storage section 31.

[0243] For example, in the storage section 31, as the default values of the transport path of the unused focus ring FR, information for specifying the first picker 17a of the VTM arm 15, the first picker 27a of the LM arm 25, and the load lock unit LLM1 is stored. Also, in the storage section 31, as the default values of the transport path of the used focus ring FR, information for specifying the second picker 17b of the VTM arm 15, the second picker 27b of the LM arm, and the load lock unit LLM2 is stored. Then, at the time of replacement processing, the substrate processing system 1 determines the transport path based on the information stored in the storage section 31.

[0244] By specifying the transport path as described above, the substrate processing system 1 can use a different path for each transport, thereby suppressing minor deviations in the transport accuracy of the focus ring FR. For example, even if the first pickup 17a and the second pickup 17b of the VTM arm 15 each have positional deviations, the unused focus ring FR can be transported along the same path to suppress the reduction in transport accuracy. Furthermore, for used focus ring FRs, the necessity for precise control of transport accuracy is reduced; therefore, when specifying the pickups used in transport, unused focus ring FRs are prioritized. However, a transport path can also be specified for used focus ring FRs.

[0245] (Switching of processing modes)

[0246] exist Figure 9 In the example, the substrate processing system 1 switches the object processing component PM to non-production mode to perform the replacement process, and then switches back to production mode after the replacement process is complete. However, it is not limited to this; the substrate processing system 1 may not automatically switch to production mode after the replacement process, but may switch to production mode based on the operator's input.

[0247] For example, the default value of the operation mode after the replacement process is completed is set to "non-production mode" and stored in the storage unit 31, so that the setting will not be changed automatically. By setting it in this way, when conservative operations such as coating processes of the processing component PM need to be performed after the focus ring FR is replaced, it is possible to prevent the wafer W from being automatically sent into the processing component PM before the conservative operation.

[0248] (The replacement process has been suspended)

[0249] After the substrate processing system 1 starts the replacement process, there may be situations where the focus ring FR falls off the VTM arm 15 or the LM arm 25, making it impossible for the replacement process to continue. Therefore, the substrate processing system 1 of this embodiment can detect this state and stop the replacement process.

[0250] After the changeover process begins, if either the first sensor S1 or the second sensor S2 of the substrate processing system 1 fails to detect the focus ring FR, the processing unit 32 is notified of this situation. Upon receiving the notification, the processing unit 32 stops the operation of the drive system (VTM arm 15, LM arm 25, etc.). The processing unit 32 then notifies the operator of the operation stop. For example, the processing unit 32 displays the operation stop notification on the display unit 34.

[0251] The operator, upon receiving the notification of the stop of the action, causes the processing components PM, the vacuum transfer chamber 10, the load lock unit LLM, and the atmospheric transfer chamber 20 to shift to the maintenance mode. Then, the operator stops the replacement processing of the substrate processing system 1 by executing an instruction input from the display section 34. At this time, the substrate processing system 1 maintains the action mode of the subject processing component PM as the non-production mode (i.e., the processing mode in which the processing of the product wafer W cannot be performed). In addition, the focus ring FR under replacement is not automatically moved, and is maintained in the state at the time of the stop. This is because it is not clear what state the focus ring FR is in, and the operator needs to visually confirm this before the recovery can be performed. After confirming the state, the operator performs the processing of opening the chamber of the processing component PM to set the focus ring FR and the like. After the recovery is completed, the operator causes each processing section to shift from the maintenance mode to the normal processing mode.

[0252] In addition, the stop of the replacement processing can be performed arbitrarily by the operator in addition to when an abnormality is detected by the substrate processing system 1. For example, the display section 34 is caused to display a screen for accepting an input of an instruction to stop the replacement processing. Then, the substrate processing system 1 is configured to be able to stop the VTM arm 15 and the LM arm 25 in accordance with the instruction input by the operator. After the action of the VTM arm 15 and the LM arm 25 is stopped, the operator performs the same processing as when the notification of the stop of the action is received.

[0253] In addition, in the replacement reservation or during the replacement processing, when the operator causes the substrate processing system 1 to shift to the maintenance mode to take out the FR-use FOUP or the focus ring FR in the FR-use FOUP, the recovery can be performed in the same steps as described above. In addition, in the substrate processing system 1, the taking out of the FR-use FOUP is set as not being able to be performed during the replacement processing as a default value.

[0254] (Maintenance of the lift pins)

[0255] The lift pins (the second lift pins 182, the support pins) for lifting the focus rings FR provided in each section of the substrate processing system 1 do not normally perform the action until the replacement processing is performed. Therefore, the second lift pins 182 and the support pins can be fixed to the surrounding structures due to aging and the like. Therefore, the substrate processing system 1 of the present embodiment can be configured to be able to automatically perform the maintenance periodically.

[0256] For example, a counter for judging the timing of the performance of the maintenance is provided similarly to the counter for notifying the replacement timing. For example, the timing of the performance of the maintenance of the second lift pins 182 is set in correspondence with each of the processing components PM. As the timing of the performance of the maintenance of the second lift pins 182, for example, the number of times of the processing of the wafer W can be used as a parameter. For example, the maintenance of the second lift pins 182 is performed at the timing of 1000 times of the processing of the wafer W.

[0257] Further, the timing of execution of the maintenance can be set to be arbitrarily set, or can be selected by the operator based on a parameter set in advance. For example, as a judgment reference of the timing of execution, any one of the number of processes (the number of wafers processed) or the RF discharge time can be selected. The timing of execution of the maintenance of the support pin of the load lock unit LLM can also be set similarly.

[0258] The timing of execution of the maintenance is set, for example, to the timing of the end of the process of the latest batch after a threshold value of a parameter set in advance is reached (for example, after 1000 processes are executed). In the case of the maintenance of the second lift pin 182 or the support pin, the substrate processing system 1 causes the second lift pin 182 or the support pin to perform the lift operation. Further, in the case where the timing of the present maintenance operation overlaps with the timing of other processes, the other operation is given priority, and the present maintenance operation is executed after the other operation ends.

[0259] (Communication relationship with host)

[0260] Further, it can also be configured so that a part of the processes described in the above embodiments as processes independently executed by the substrate processing system 1 is executed in another device. For example, the control device 30 of the substrate processing system 1 can be configured as a separate independent device with respect to other parts. In addition, the substrate processing system 1 can be remotely controlled from another device.

[0261] For example, a host (server) is provided in addition to the substrate processing system 1. Then, the plasma process in each process component PM can be controlled on the host side. In this case, the control of the process component PM on the host side is interrupted due to the replacement process on the substrate processing system 1 side. Therefore, the substrate processing system 1 notifies the host each time in the case where the mode change of the process component is executed in order to execute the replacement process. During the production mode, the control of the process component PM is managed by the host side, and during the non-production mode, the host side controls so that the process to the process component PM is stopped. In this case, the substrate processing system 1 is configured to notify the host of the mode change in steps S1503, S1507. Figure 9

[0262] (Example of the shape of the picker provided to the transport mechanism)

[0263] ​In the above embodiment, the first picker 17a and the second picker 17b of the VTM arm 15 and the first picker 27a and the second picker 27b of the LM arm 25 can be configured in the following manner. Hereinafter, the first picker 17a and the second picker 17b of the VTM arm 15 and the first picker 27a and the second picker 27b of the LM arm 25 will be collectively referred to as a picker 50. The picker 50 is an example of a holding device provided at a front end of an arm of a transport mechanism for transporting the wafer W and the consumable component.

[0264] In the above embodiment, the VTM arm 15 and the LM arm 25 are configured to be capable of transporting both the wafer W and the consumable component. Hereinafter, a configuration of the picker 50 in a case where the consumable component is the focus ring FR will be described as an example.

[0265] Figure 14A is a schematic plan view showing an example of a configuration of the picker 50 of the substrate processing system 1 according to an embodiment. Figure 14B is a schematic front view of the picker 50 shown in Figure 14A . The picker 50 includes a base portion 51 and a first branch portion 52 and a second branch portion 53 extending in different directions from both ends of the base portion 51. The base portion 51, the first branch portion 52, and the second branch portion 53 are formed so that, when a triangle that is tangent to an outer diameter of the wafer W is drawn with the center of the wafer W as a center, three vertices of the triangle are respectively located on the base portion 51, the first branch portion 52, and the second branch portion 53. Note that the shape of the picker 50 is not limited to the two-branch shape shown in Figure 14A . The picker 50 can have three or more branch portions. However, the shape of the picker 50 is configured so that, when the focus ring FR is disposed on the picker 50, a gap is formed between an inner diameter of the focus ring FR and the picker 50 in plan view.

[0266] The picker 50 has a first surface 55 on a side on which the wafer W and the focus ring FR are held. A plurality of first holding portions 60a to 60f for holding the wafer W are formed on the first surface 55. Hereinafter, the plurality of first holding portions 60a to 60f will be collectively referred to as a first holding portion 60 when it is not necessary to distinguish between the plurality of first holding portions 60a to 60f. The first holding portion 60 is formed on at least one of the base portion 51, the first branch portion 52, and the second branch portion 53. Note that Figure 14A six first holding portions 60 are shown, but the number of the first holding portions 60 is not limited to six and can be less than six or more than six. In addition, the plurality of first holding portions 60 are disposed on a first circle CI having a diameter smaller than an inner diameter of the focus ring FR.

[0267] The plurality of first holding portions 60 have upper surfaces at positions at a height hi from the first surface 55. The shape of the upper surfaces of the plurality of first holding portions 60 is not particularly limited. The upper surfaces of the plurality of first holding portions 60 can be substantially parallel to the first surface 55, or can be semispherical with the outer periphery chamfered.

[0268] A plurality of second holding portions 70a to 70d for holding the focus ring FR are also formed on the first surface 55. Hereinafter, the plurality of second holding portions 70a to 70d are collectively referred to as second holding portions 70 when it is not necessary to distinguish each of the plurality of second holding portions 70a to 70d. Like the first holding portions 60, the second holding portions 70 are formed at least one on each of the base portion 51, the first leg portion 52, and the second leg portion 53. Further, Figure 14A The second holding portions 70 are shown as four in number, but the number of the second holding portions 70 is not limited to four, and can be less than four or more than four. One end of the second holding portion 70 is disposed on a second circle C2 having a diameter larger than the outer diameter of the focus ring FR and substantially concentric with the above-described first circle CI. In addition, the other end of the second holding portion 70 is disposed on a third circle C3 having a diameter larger than the inner diameter of the focus ring FR and smaller than the outer diameter. Further, the other end of the second holding portion 70 can be disposed on a fourth circle C4 having a diameter smaller than the inner diameter of the focus ring FR.

[0269] The other end of the second holding portion 70 is disposed closer to the center of the first circle CI to the fourth circle C4 than the one end of the second holding portion 70. The one end of the second holding portion 70 has an upper surface at a position at a height h2 from the first surface 55. The other end of the second holding portion 70 has an upper surface at a position at a height h3 from the first surface 55. The heights hi, h2, and h3 have at least the relationship of hi > h2 > h3. As shown in Figure 14B the upper surface of the second holding portion 70 is a sloping surface that gradually lowers from the one end to the other end, that is, from the circumferential side of the first circle CI to the fourth circle C4 to the center side. The upper surface of the second holding portion 70 is at a lower position than the upper surface of the first holding portion 60 at any position.

[0270] Figure 15A is a schematic plan view showing a state in which the wafer W is held on the pickup 50 shown in Figure 14A Figure 15B is a schematic front view of the pickup 50 and the wafer W shown in Figure 15A As shown in Figure 15A the pickup 50 supports the wafer W by the plurality of first holding portions 60 to hold the wafer W in a state in which the first surface 55 does not come into contact with the wafer W. In addition, as shown in Figure 15B the upper surface of the second holding portion 70, which is at a lower position than the upper surface of the first holding portion 60, does not come into contact with the wafer W when the wafer W is held on the pickup 50.

[0271] Figure 16A ​is a schematic plan view showing a state in which the focus ring FR is held on the Figure 14A pickup 50 shown in Fig. 1. Figure 16B is a schematic front view showing the pickup 50 and the focus ring FR as viewed from the horizontal direction. Figure 16A Figure 16A As shown in Fig. 2, the pickup 50 supports the focus ring FR by the plurality of second holding portions 70 to hold the focus ring FR in a state in which the first surface 55 is not in contact with the focus ring FR. In addition, as shown in Fig. 2, the outer periphery of the focus ring FR is in abutment with the second holding portions 70 at the intermediate portions of the inclined surfaces of the second holding portions 70 and is supported thereby. Figure 16B

[0272] Therefore, by providing the first holding portion 60 for holding the wafer W and the second holding portion 70 for holding the focus ring FR on the pickup 50, it is possible to use one pickup 50 for the transport of either the wafer W or the focus ring FR.

[0273] In addition, the upper surface of the first holding portion 60 is made higher in position than the upper surface of the second holding portion 70, and it is possible to prevent the wafer W from coming into contact with each portion of the pickup 50 to cause contamination or breakage at the time of transport of the wafer W. In addition, the upper surface of the second holding portion 70 is made an inclined surface that is lower from the outside toward the inside, and it is possible to reduce the contact surface of the focus ring FR with the pickup 50. Therefore, it is possible to prevent the focus ring FR from sticking to the pickup 50 during transport. In addition, by preventing sticking, it is possible to prevent positional deviation of the focus ring FR during transport and springing up at the time of placement, and the like.

[0274] Further, the moving speed of the pickup 50 is set to be slower at the time of transport of the focus ring FR than at the time of transport of the wafer W.

[0275] In addition, the material of the first holding portion 60 and the second holding portion 70 is not particularly limited. The first holding portion 60 and the second holding portion 70 can be formed of, for example, any material such as rubber, ceramic, or the like. However, the second holding portion 70 is preferably manufactured using a material having a low coefficient of friction with the focus ring FR from the viewpoint of preventing sticking as described above.

[0276] Further, at least a portion of the second holding portion 70 can be arranged between the inner diameter and the outer diameter of the focus ring FR, and the specific shape is not limited to that shown in Fig. 2. For example, in the case where the lower surface of the focus ring FR is not flat, the positions of one end and the other end of the second holding portion 70 can be adjusted in conformity with the shape of the focus ring FR. Figure 14A-16B

[0277] ​​​Furthermore, the second holding portion 70 can be integrally formed with the base 51, the first branch 52, and the second branch 53 of the pickup 50. Additionally, the second holding portion 70 can be formed of the same material as the base 51, the first branch 52, and the second branch 53 of the pickup 50. Besides ceramic, titanium, silicon nitride, etc., can also be used.

[0278] also, Figure 16A and Figure 16B The focusing ring FR shown is Figure 3 Unlike other devices, it has no cutouts on the upper surface of the inner diameter side. However, the shape of the focusing ring FR delivered by the pickup 50 is not particularly limited. Figure 3 The focusing ring FR of the shape shown can also be conveyed by the pickup 50.

[0279] (Position deviation detection during transport)

[0280] As described above, the substrate processing system 1 of the above embodiment has first sensors S1 to S16 for detecting positional deviations of the wafer W and the focusing ring FR transported to the processing component PM. Furthermore, the first sensors are arranged in pairs along the transport path near the gate valve of each processing component PM. Additionally, third sensors S20 to S27 within the atmospheric pressure transport chamber 20 also detect positional deviations. Next, a positional deviation detection method that can be used in conjunction with the first sensors S1 to S16 and the third sensors S20 to S27 will be described. In the following description, third sensors S20 and S21 installed before the loading interlock unit LLM1 and third sensors S24 and S25 installed before the loading port LP2 will be described as examples.

[0281] Figure 17 This is a diagram illustrating the configuration position of the third sensor in a substrate processing system according to one embodiment. Figure 17 Viewing from right to left on the paper Figure 1 A cross-sectional view of the atmospheric pressure delivery chamber 20 of the substrate processing system 1 shown.

[0282] exist Figure 17 In the middle, on the left is the loading platform 201 of the loading port LP2 for placing the FOUP. To the right of the loading platform 201 is a door 202 for communicating between the atmospheric pressure delivery chamber 20 and the interior of the FOUP. Moving the door 202 downwards moves the FOUP cover, thereby communicating between the interior of the FOUP and the interior of the atmospheric pressure delivery chamber 20. On the side of the atmospheric pressure delivery chamber 20 opposite to the loading port LP2, a gate valve GV (see reference) connected to the loading interlock unit LLM1 is located. Figure 18A-18C The gate valve GV is positioned between the loading interlock unit LLM and the atmospheric pressure delivery chamber 20. The gate valve GV includes a baffle 220, a movable cover 230, and a moving mechanism 240.

[0283] Figure 18A is a schematic perspective view of a baffle 220 provided to the gate valve GV according to an embodiment. Figure 18B is a schematic perspective view of a portion of the gate valve GV according to an embodiment, which is enlarged. Figure 18C is a schematic perspective view of a state in which the opening 221 of the gate valve GV according to an embodiment is shielded.

[0284] The baffle 220 is a plate-shaped member fixed in front of the load lock unit LLM1. Figure 18A The baffle 220 shown is configured in front of the load lock unit LLM1, and has a substantially rectangular shape having an upper edge, a right edge, a lower edge, and a left edge when viewed from the normal pressure transfer chamber 20 side. However, the shape of the baffle 220 is not particularly limited. The baffle 220 is formed of the opening 221, one pair of first protruding portions 222, and one pair of second protruding portions 223.

[0285] The opening 221 divides a space through which the wafer W and the focus ring FR pass between the load lock unit LLM1 and the normal pressure transfer chamber 20. The opening 221 is formed in the baffle 220. Figure 18A In the example shown, the opening 221 is formed at a position higher than the center of the baffle 220. The opening 221 is a substantially rectangular shape having a width larger than the outer diameter of the focus ring FR. The size and shape of the opening 221 are not particularly limited as long as the wafer W and the focus ring FR can be transferred in and out in the horizontal direction while being placed on the reticle chuck 50.

[0286] The first protruding portion 222 protrudes from the baffle 220 toward the normal pressure transfer chamber 20 side. The first protruding portion 222 has an upper protrusion 222a and a lower protrusion 222b. The upper protrusion 222a is a plate-shaped member protruding in the horizontal direction along the upper edge of the baffle 220. The upper protrusion 222a is provided with the light projecting portion 20p of the third sensor S20. The lower protrusion 222b is a plate-shaped member protruding in the horizontal direction along the lower edge of the baffle 220. The lower protrusion 222b is provided with the light receiving portion 20r of the third sensor S20. Alternatively, the light projecting portion 20p can be provided to the lower protrusion 222b, and the light receiving portion 20r can be provided to the upper protrusion 222a.

[0287] The light projecting portion 20p of the upper protrusion 222a emits light in the vertical direction downward. The light receiving portion 20r of the lower protrusion 222b is disposed on the optical path OP1 of the light emitted from the light projecting portion 20p. In the example shown, the light emitted from the light projecting portion 20p is reflected by the wafer W and the focus ring FR, and the reflected light is received by the light receiving portion 20r. Figure 18A In the example shown, a line connecting the light projecting portion 20p and the light receiving portion 20r extends in the vertical direction and passes in front of the space defined by the opening 221.

[0288] The shape of the second protruding portion 223 is the same as that of the first protruding portion 222. The second protruding portion 223 protrudes from the baffle 220 toward the normal-pressure delivery chamber 20 side. The second protruding portion 223 has an upper protruding portion 223a and a lower protruding portion 223b. The upper protruding portion 223a is a plate-like member that protrudes in the horizontal direction along the upper edge of the baffle 220. The light-emitting portion 21p of the third sensor S21 is provided on the upper protruding portion 223a. In addition, the lower protruding portion 223b is a plate-like member that protrudes in the horizontal direction along the lower edge of the baffle 220. The light-receiving portion 21r of the third sensor S21 is provided on the lower protruding portion 223b.

[0289] The light-emitting portion 21p of the upper protruding portion 223a emits light in the vertical direction downward. The light-receiving portion 21r of the lower protruding portion 223b is disposed on the optical path OP2 of the emitted light. In Figure 18A the example, the line connecting the light-emitting portion 21p and the light-receiving portion 21r extends in the vertical direction and passes in front of the space defined by the opening 221.

[0290] Further, the gate valve GV has a connection portion 250 that connects the sensors to the control device 30 (see Figure 18C ). The connection portion 250 is, for example, a cable for transmitting signals detected at the light-receiving portions of the sensors to the control device 30.

[0291] A movable cover 230 is disposed on the normal-pressure delivery chamber 20 side of the baffle 220 (see Figure 18C ). The movable cover 230 is connected to the moving mechanism 240 and moves up and down between the upper protruding portions 222a, 223a and the lower protruding portions 222b, 223b of the first protruding portion 222 and the second protruding portion 223 in correspondence with the power transmitted from the moving mechanism 240. When the movable cover 230 is located at the uppermost portion in the movable range (see Figure 18C ), the opening 221 is covered, and the load interlocking unit LLM1 is closed from the normal-pressure delivery chamber 20. When the movable cover 230 is located at the lowermost portion in the movable range, the opening 221 is opened, and the load interlocking unit LLM1 is communicated with the normal-pressure delivery chamber 20. The thickness of the movable cover 230 is such that the optical paths OP1, OP2 between the upper protruding portions 222a, 223a and the lower protruding portions 222b, 223b are not interfered with (see Figure 17 ).

[0292] Returning to Figure 17 , the third sensors S24, S25 disposed on the load port LP2 side will be described. The third sensors S24, S25 each include a light-emitting portion 24p, 25p and a light-receiving portion 24r, 25r. As Figure 17As shown, the light projecting portions 24p, 25p of the third sensors S24, S25 are provided on the top side of the normal pressure transport chamber 20. Further, the light receiving portions 24r, 25r of the third sensors S24, S25 are provided on the bottom side of the normal pressure transport chamber 20. The wafer W and the focus ring FR transported by the LM arm 25 pass through the optical path of the light emitted from the light projecting portions 24p, 25p and received by the light receiving portions 24r, 25r. The arrangement positions of the third sensors S24, S25 are not particularly limited as long as the wafer W and the focus ring FR can pass through the optical path.

[0293] Next, the detection of the positional deviation using the third sensors will be described. Figure 19A is a view for explaining the positional relationship between the consumed component in the transport and the sensors in one embodiment. Figure 19A indicates a state in which the focus ring FR is transported to the load interlocking unit LLMl along the direction of the arrow X. In Figure 19A , the load port LP2 is located below the paper surface, and the load interlocking unit LLMl is located above the paper surface. When the focus ring FR is transported on the transport path, the center of the focus ring FR moves along the line L3 in design. The third sensor S20 is arranged so that the optical path OP1 is located on the line L2. Further, the third sensor S21 is arranged so that the optical path OP2 is located on the line L4. Further, the third sensors S20, S21 are arranged on lines orthogonal to the advancing direction of the focus ring FR. Furthermore, the lines L2, L4 are each a line parallel to the line L3 arranged at a distance from the line L3.

[0294] At this time, when the focus ring FR is transported to the correct position, the detection signal detected in the third sensor S20 and the detection signal detected in the third sensor S21 are the same waveform. Figure 19B is a view showing an example of the detection signal in the case of Figure 19A When the focus ring FR passes between the light projecting portions 20p, 21p and the light receiving portions 20r, 21r of the third sensors S20, S21, the light emitted from the light projecting portions 20p, 21p is blocked by the focus ring FR. The light receiving portions 20r, 21r output a detection signal of a high level (High) in the case of not receiving light, and a detection signal of a low level (Low) in the case of receiving light, for example. In Figure 19A , each portion of the focus ring FR passes the third sensors S20 and S21 at the same time. Therefore, as shown in Figure 19B , the detection signals output from the third sensors S20, S21 become a high level at the same time, or a low level at the same time.

[0295] On the other hand, when the focus ring FR has a positional deviation, the detection signals output from the third sensors S20, S21 are waveforms different from each other. Figure 20A is a view for explaining the positional deviation of the consumed component in the transport. InFigure 20A In the example, the center of the focusing ring FR deviates from the correct position (on line L3) towards the side of line L2. Figure 20A When the focusing ring FR is conveyed in the direction of arrow X in its current position, compared to the third sensor S21, the outer periphery of the focusing ring FR first blocks the light emitted from the projection section 20p at the third sensor S20. Afterwards, during period P1 (refer to...) Figure 20B Afterwards, the focusing ring FR blocks the light emitted from the projection section 21p at the third sensor S21. Furthermore, as the focusing ring FR moves in the X direction, it blocks the light again in the third sensor S21, and subsequently, the light is also blocked in the third sensor S20. Therefore, the waveform of the detection signal obtained when the center of the focusing ring FR is deviated from the correct position is, for example, as shown below. Figure 20B The waveform shown is illustrated. The control device 30 detects the positional deviation of the focusing ring FR based on the deviation of the waveform of the detection signal output from the third sensors S20 and S21. Therefore, the control device 30 is able to correct the positional deviation of the focusing ring FR.

[0296] In the example above, two sensors are configured above and below the opening 221 of the gate valve GV before the interlock unit LLM1 is installed. However, this is not a limitation; more than three sensors can also be configured. For example, Figure 21 This is a diagram showing the location relationship between consumable components and sensors in a configuration with four sensors. Figure 21 In the example, in addition to the third sensors S20 and S21, sensors S20A and S21A are also configured. Furthermore, when more than three sensors are configured, each sensor has a light-emitting part and a light-receiving part configured above and below the opening 221.

[0297] Furthermore, in correcting positional deviations, either the outer diameter or the inner diameter of the focusing ring FR detected by each sensor can be used, or both can be used. However, from the viewpoint of accurately correcting the positional relationship between the wafer W and the focusing ring FR, it is preferable to use the inner diameter for correction.

[0298] In addition, the correction of positional deviation, for example, Figure 22 The position of the center of the focusing ring FR is calculated by moving the focusing ring FR by the difference from the correct center position. Figure 22 This is a diagram illustrating the method for calculating the positional deviation of consumable components. For example... Figure 22As shown, a center line of a line segment that links the inner diameter position of the focus ring FR on the line segment L2 is drawn based on the detection signal. In addition, a center line of a line segment that links one of the intersection points of the line segment L2 and the inner diameter position and one of the intersection points of the line segment L4 and the inner diameter position is drawn. The intersection point of the two center lines is the center of the focus ring FR. The position of the focus ring FR is corrected based on the distance from the thus-calculated center of the focus ring FR to the line segment L3.

[0299] Further, in the case where two sensors are arranged in front of the opening 221, the arrangement interval of the two sensors is wider than the width of the pickup and shorter than the inner diameter of the focus ring FR. In addition, for example, in the case where four sensors are arranged in front of the opening 221, the arrangement interval of the two sensors arranged at the outermost sides is wider than the width of the pickup and shorter than the inner diameter of the focus ring FR. In addition, the first, second, and third sensors each can perform not only the position deviation correction of the focus ring FR but also the position deviation correction of the wafer W, and thus the arrangement interval of the two sensors arranged at the outermost sides is also shorter than the outer diameter of the wafer.

[0300] Further, the first, second, and third sensors are used not only for the detection and correction of the position deviation of the wafer W and the focus ring FR but also for detecting whether the pickup holds the wafer W or the focus ring FR. For example, in the case where the third sensor detects an object when the pickup moves left and right before the pickup reaches the load lock unit LLM, it is possible to determine that the wafer W or the focus ring FR is arranged on the pickup. In addition, it is also possible to determine the presence or absence of the wafer W or the focus ring FR by the same operation when the pickup reaches the load port LP.

[0301] Further, the third sensor arranged in front of the load port LP is arranged at a position that does not interfere with the opening and closing of the door 202 of the load port LP. In addition, no structure other than the wafer W and the focus ring FR is arranged on the light path that links the light projecting portion and the light receiving portion of the third sensor. The same applies to the third sensor arranged in front of the load lock unit LLM.

[0302] (Another Modification Example)

[0303] Further, in the present embodiment, the execution of the setting of the FR-use FOUP and the completion of the taking-out require the instruction input by the operator. However, the substrate processing system 1 can also be configured to omit the instruction input by the operator.

[0304] In addition, in the present embodiment, the types of the FOUPs that can be set to each load port LP are fixed, but it is also possible to configure so that all the load ports LP can be set with the FR-use FOUP and the wafer-use FOUP. In this case, the third sensor can be arranged in front of all the load ports LP. In addition, the types of the mapping sensor MS and the first to third sensors are not particularly limited, and a transmissive photoelectric sensor or the like can be used.

[0305] In addition, in the present embodiment, the control device 30 has the display section 34, but the screen generated by the control device 30 can be transmitted to another device via the input / output interface 33 and displayed in the other device.

[0306] <Effects of Embodiments>

[0307] The substrate processing system of the above embodiment includes an atmospheric pressure transfer chamber, a vacuum processing chamber, one or more load lock units, a vacuum transfer chamber, a plurality of mounting sections, a first transfer mechanism, a second transfer mechanism, and a control section. The atmospheric pressure transfer chamber is used to transfer substrates and consumable parts in an atmospheric pressure atmosphere. The vacuum processing chamber is used to perform vacuum processing on the substrates. The one or more load lock units are arranged between the atmospheric pressure transfer chamber and the vacuum processing chamber for the substrates and the consumable parts to pass through. The vacuum transfer chamber is arranged between the vacuum processing chamber and the one or more load lock units for transferring the substrates and the consumable parts in a reduced pressure atmosphere. The plurality of mounting sections are provided in the atmospheric pressure transfer chamber and have ports through which the substrates or the consumable parts transferred between each of a plurality of storage sections for storing the substrates or the consumable parts and the atmospheric pressure transfer chamber can pass. The plurality of mounting sections can detachably mount each of the plurality of storage sections. The first transfer mechanism transfers the substrates and the consumable parts between the one or more load lock units and the vacuum processing chamber via the vacuum transfer chamber. The second transfer mechanism transfers the substrates and the consumable parts between the plurality of storage sections and the one or more load lock units via the atmospheric pressure transfer chamber. The control section causes the first transfer mechanism and the second transfer mechanism to perform the following transfers in parallel: a transfer of the consumable parts from the storage sections to the vacuum processing chamber via the atmospheric pressure transfer chamber and one of the one or more load lock units; and a transfer of the consumable parts from the vacuum processing chamber via the vacuum transfer chamber and another of the one or more load lock units. Thus, the substrate processing system of the embodiment can shorten the replacement time of the consumable parts in the vacuum processing chamber. Therefore, according to the embodiment, the work efficiency of the substrate processing system can be improved. In the case where a wafer is transferred via one load lock unit, the transfer processing must be put on hold during the performance of the atmospheric opening and the vacuuming of the load lock unit. The substrate processing system of the above embodiment transfers the consumable parts via two load lock units. In addition, the substrate processing system of the embodiment performs the replacement processing when there is no wafer on the first transfer mechanism and the second transfer mechanism and in the load lock units. Thus, according to the present embodiment, the two load lock units can be used for outfeed and infeed, respectively, and the replacement time of the consumable parts can be shortened.

[0308] Further, in the substrate processing system of the above embodiment, the plurality of mounting portions include a first mounting portion capable of mounting a first storage portion for storing the substrate, and a second mounting portion capable of mounting a second storage portion for storing the consumable component. Thus, the substrate processing system of the embodiment can mount the storage portion of the substrate and the storage portion of the consumable component to the atmospheric transfer chamber to perform replacement of the consumable component.

[0309] Further, in the substrate processing system of the above embodiment, the control portion causes the display portion to display a mounting state of the plurality of storage portions in the plurality of mounting portions. Thus, in the substrate processing system of the embodiment, an operator can easily confirm the mounting state of the storage portions.

[0310] Further, in the substrate processing system of the above embodiment, the control portion causes the display portion to display the first mounting portion and the second mounting portion in a manner that the first mounting portion and the second mounting portion can be distinguished from each other. Thus, according to the substrate processing system of the embodiment, an operator can easily confirm in which position the second storage portion for storing the consumable component should be mounted.

[0311] Further, in the substrate processing system of the above embodiment, the control portion accepts a replacement reservation of the consumable component disposed in the vacuum processing chamber. Then, when it is determined that there is no substrate and no consumable component in transfer in the vacuum transfer chamber, the one or more load interlocks, and the atmospheric transfer chamber, the first transfer mechanism and the second transfer mechanism perform replacement of the consumable component. Thus, the substrate processing system of the embodiment can perform replacement of the consumable component without hindering the substrate processing. Further, the substrate processing system can perform replacement of the consumable component without worrying about contamination or damage of the substrate.

[0312] Further, in the substrate processing system of the above embodiment, the control portion accepts the replacement reservation when the second storage portion is mounted to the second mounting portion, and does not accept the replacement reservation when the second storage portion is not mounted to the second mounting portion. Thus, the substrate processing system of the embodiment can prevent the replacement reservation from being accepted when the consumable component used is not prepared for replacement.

[0313] Further, in the substrate processing system of the above embodiment, the control portion accepts mounting of the second storage portion to the second mounting portion only when a prescribed instruction input is made. Thus, the substrate processing system of the embodiment can prevent the second storage portion for storing the consumable component from being set without the operator knowing.

[0314] Further, in the substrate processing system of the above embodiment, a sensor capable of detecting the substrate disposed in the first storage portion and the consumable component disposed in the second storage portion is further included. Then, the control portion changes a parameter of the sensor when a prescribed instruction input is made. Thus, the substrate processing system can perform detection in accordance with the parameter corresponding to the substrate and the consumable component, respectively.

[0315] In the substrate processing system of the above embodiment, the tip of the arm of the transport mechanism (the first transport mechanism and the second transport mechanism) that transports the substrate and the consumable component is provided with a holding device that holds the substrate and the consumable component. The holding device includes a first surface, a plurality of first holding portions, and a plurality of second holding portions. The first surface opposes the surface of the substrate and the consumable component during transport. The plurality of first holding portions are formed on the first surface and hold the substrate. The plurality of second holding portions are formed on the first surface and are disposed outside a first circle that links the plurality of first holding portions, and hold the consumable component. The second holding portion has an inclined surface that is closer to the first surface as it goes toward the inner side of the diameter of a second circle on which the second holding portion is disposed, from one end of the second holding portion. Thus, the second holding portion can reduce the contact area with the consumable component, and prevent the consumable component from sticking and bouncing. Also, the second holding portion is disposed outside the first holding portion, and thus the second holding portion can hold the ring-shaped consumable component without contacting the first holding portion.

[0316] In the holding device, the height of the first holding portion from the first surface is greater than the height of the one end of the second holding portion from the first surface. Thus, the first holding portion can hold the substrate without contacting the second holding portion. Thus, the holding device of the embodiment can reduce the adhesion of the substance adhered to the substrate to the holding device.

[0317] In the holding device, the other end of the second holding portion can be disposed on a third circle that is between the inner diameter and the outer diameter of the consumable component. Alternatively, the other end of the second holding portion can be disposed on a fourth circle that has a diameter smaller than the inner diameter of the consumable component. Thus, the second holding portion can be configured to correspond to the shape of the transported consumable component.

[0318] The embodiments disclosed in the specification are illustrative and not considered as limiting. The above-described embodiments can be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the spirit thereof.

Claims

1. A substrate processing system, comprising: Atmospheric pressure transport chamber for transporting substrates and consumable components; Multiple mounting sections have ports that allow the substrate or consumable component transported between each of the multiple storage sections and the atmospheric pressure delivery chamber to pass through, wherein the multiple storage sections receive the substrate or consumable component, and each of the multiple storage sections can be detachably mounted; A reading unit that reads the carrier ID of the storage unit installed in the mounting unit; A conveying mechanism that conveys the substrate and the consumable component between the plurality of storage sections and one or more loading interlocking units connected to the atmospheric pressure conveying chamber via the atmospheric pressure conveying chamber, the conveying mechanism having a picker for placing the substrate and the consumable component and an arm for moving the picker; A sensor, disposed at the front end of the pickup, detects the substrate and consumable components mounted in the storage section of the mounting portion; and Control device, The control device identifies, based on the carrier ID read by the reading unit, whether it is the carrier ID of a first storage unit for substrates that store substrates but not consumable components, or the carrier ID of a second storage unit for consumable components that store consumable components but not substrates. If the sensor is identified as the carrier ID of the second storage unit, a threshold value suitable for the size of the consumable component is set.

2. The substrate processing system as described in claim 1, wherein, The reading section is located in the installation section.

3. The substrate processing system as described in claim 1 or 2, wherein, It also has a storage section. The control device stores the carrier ID that is identified as the carrier ID of the second storage unit in the storage unit, corresponding to the mounting unit on which the second storage unit is installed.

4. The substrate processing system as described in claim 1, wherein, The control device switches the threshold set for the sensor when detecting the condition of the substrate in the first storage section and the consumable component in the second storage section.

5. The substrate processing system as described in claim 1, wherein, The sensor detects at least one of the location or number of the consumable components within the second storage section.

6. The substrate processing system as described in claim 1, wherein, The sensor sends the result of detecting the consumable component in the second storage section to the control device.

7. The substrate processing system as described in claim 1, wherein, The pickup is U-shaped. The sensors are located at both ends of the U-shape of the pickup.

8. The substrate processing system as claimed in claim 1, wherein, The sensor is a transmissive photoelectric sensor.

9. The substrate processing system as described in claim 1 or 2, wherein, It also has an input section and a display section. The control device, The screen for inputting the carrier ID installed in the storage unit of the mounting unit is displayed on the display unit. The input unit receives the carrier ID installed in the storage unit of the mounting unit.

10. The substrate processing system as claimed in claim 1 or 2, wherein, The arrangement interval of the substrates disposed in the first storage section is different from the arrangement interval of the consumable components disposed in the second storage section.

11. The substrate processing system as claimed in claim 1 or 2, wherein, The second storage section has a storage section for storing the consumable parts. Before use, the consumable parts are stored in the storage compartment at a position above the position where the used consumable parts are stored.

12. The substrate processing system as described in claim 1 or 2, wherein, The second storage section is configured to store the same number of the consumable parts before use and the consumable parts after use.

13. The substrate processing system as described in claim 1 or 2, wherein, It has multiple vacuum processing chambers connected to the loading interlock unit to perform vacuum processing on the substrate. The second storage section is configured to store a number of the consumable parts before use and the consumable parts after use, corresponding to the number of vacuum processing chambers.

14. The substrate processing system as claimed in claim 1 or 2, wherein, At least one of the plurality of mounting parts is configured to be capable of mounting either the first storage part or the second storage part.

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