A deposition chamber for CVD equipment convenient for flow diversion

Abstract

The present invention discloses a deposition chamber for CVD equipment which is convenient for flow diversion, relates to the technical field of CVD deposition chambers, comprises a base plate and a support column fixedly mounted on the bottom of the base plate, the top of the base plate is fixedly connected with a deposition cylinder, the top middle of the deposition cylinder is equipped with an exhaust pipe, and also comprises: an air inlet pipe symmetrically mounted on both sides of the top of the deposition cylinder, a sealing door mounted on the front side of the deposition cylinder; a flow equalizing component arranged in the middle of the interior of the deposition cylinder, the flow equalizing component comprises a drive motor, and the drive motor is fixedly mounted in the bottom middle of the base plate; an auxiliary component is arranged on the inner side of the fixed ring, the auxiliary component comprises a fixed inner block and a ferrule, which solves the problem of insufficient contact between the carbon source gas and the workpiece, so that the carbon source gas is directly discharged without densifying the workpiece as a whole, and there may be a situation where the densification effect is poor in a local position of the workpiece, or even the densification is not complete, which reduces the problem of uniformity and integrity of the workpiece densification.

Description

Technical Field

[0001] The invention relates to the technical field of CVD deposition chambers, in particular to a deposition chamber for CVD equipment which is convenient for flow diversion. Background Art

[0002] Chemical vapor deposition (CVD) is the most widely used technology in the semiconductor industry for depositing a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. CVD technology passes carbon source gas into a high-temperature pyrolysis furnace (900°C-1100°C) for pyrolysis. The pyrolytic carbon is deposited on the carbon fiber preform to densify through mechanisms such as diffusion and convection.

[0003] For example, a split-flow CVD deposition chamber with publication number CN218115585U includes a fixed base, a deposition chamber protection component and a deposition chamber carbon source gas uniform component, wherein the deposition chamber protection component includes a shock-absorbing connecting plate, a shock-absorbing damper, a telescopic shock-absorbing spring, a deposition chamber barrel, a deposition chamber closed door, a fixed inner ring plate, a deposition plate connecting buckle and a prefabricated deposition plate, and the deposition chamber carbon source gas uniform component includes a fixed vertical plate, a driving motor, a carbon source gas fan, a carbon source gas inlet pipe, a connecting support ring plate, a motor support shaft, an exhaust motor, a rotating exhaust transmission shaft and a rotating exhaust fan blade, which are connected to the shock-absorbing damper and the telescopic shock-absorbing spring. The shock-absorbing spring can achieve the purpose of shock-absorbing protection for the CVD deposition chamber, the purpose of good diversion deposition effect can be achieved through the deposition chamber protection component, and the purpose of uniform carbon source gas component in the deposition chamber can be achieved that the gas is not only present in the bottom layer but also the high layer can densify the preform uniformly. However, the carbon source gas densifies by flowing from bottom to top, and the contact between the carbon source gas and the workpiece is insufficient, so that the carbon source gas is directly discharged without densifying the workpiece as a whole. There may be a situation where the densification effect is poor in some local parts of the workpiece, or even the densification is not complete, which reduces the uniformity and integrity of the workpiece densification and affects the processing effect of the deposition chamber.

[0004] Therefore, we propose a deposition chamber for a CVD device that is easy to divert in order to solve the above-mentioned problems. Summary of the invention

[0005] The object of the present invention is to provide a deposition chamber for CVD equipment which is easy to divert, so as to solve the problem of insufficient contact between the carbon source gas and the workpiece, so that the carbon source gas is directly discharged without densifying the workpiece as a whole, which may result in poor densification effect at local positions of the workpiece, or even incomplete densification, thereby reducing the uniformity and integrity of the workpiece densification.

[0006] To achieve the above object, the present invention provides the following technical solution: a deposition chamber for a CVD device that is convenient for flow diversion, comprising a bottom plate and a support column fixedly installed at the bottom of the bottom plate, a deposition cylinder fixedly connected to the top of the bottom plate, and an exhaust pipe installed in the middle of the top of the deposition cylinder;

[0007] Also includes:

[0008] The air inlet pipe is symmetrically installed on both sides of the top of the sedimentation cylinder, and a sealing door is installed on one side of the front of the sedimentation cylinder;

[0009] A flow balancing component is arranged in the middle of the deposition cylinder, a mounting rod is symmetrically fixed to the inner top surface of the deposition cylinder, a placement plate is fixedly connected to the bottom end of the mounting rod, an air duct is symmetrically connected to the inner bottom surface of the deposition cylinder, and the bottom end of the air duct passes through the bottom plate and is connected to the outside;

[0010] The flow balancing component includes a driving motor, which is fixedly installed in the middle of the bottom of the bottom plate, and the output end of the driving motor passes through the bottom plate and is fixedly connected to a rotating shaft with a deposition tube, a scattering rod is fixedly connected to the outer middle part of the rotating shaft, a flow dividing plate is fixedly connected to the inner lower part of the deposition tube, a rotating disk is fixedly connected to the top of the rotating shaft, and a fixing ring is fixedly connected to the upper inner wall of the deposition tube;

[0011] The inner side of the fixed ring is connected to a disc gear, the bottom of the disc gear is fixedly connected to a connecting rod, the bottom end of the connecting rod is connected to the rotating disk, the top of the fixed ring is symmetrically fixed with a fixing plate, the side of the fixing plate close to the mounting rod is rotatably connected to a connecting shaft, the outer side of the middle part of the connecting shaft is fixedly connected to a slave gear, and the end of the connecting shaft away from the fixing plate is fixedly connected to a rotating rod 1;

[0012] The end of the rotating rod 1 away from the connecting shaft is rotatably connected to the rotating rod 2, the end of the rotating rod 2 away from the rotating rod 1 is installed with a connecting tube, the rotating rod 2 is rotatably connected to the connecting tube, the bottom end of the air inlet pipe passes through the deposition tube and is connected to the connecting tube, and the inner side of the connecting tube is fixedly installed with an air jet;

[0013] An auxiliary component is arranged on the inner side of the fixing ring. The auxiliary component comprises a fixing inner block and a ferrule. A clamping groove is arranged on the inner side of the ferrule.

[0014] Preferably, the rotating shaft is rotatably connected to the diverter plate, a through hole is provided inside the diverter plate, the diameter of the rotating disk is smaller than the diameter of the inner wall of the deposition cylinder, and an air hole is provided inside the rotating disk.

[0015] By adopting the above technical solution, a flow equalizing component is provided, the breaking rod rotates to break up the ultra-high purity gas, the guide block and the conical tube play a guiding role, and the jet from the jet port disturbs the ultra-high purity gas, so that the contact time between the ultra-high purity gas and the semiconductor is longer, and the densification uniformity is improved. The pores of the rotating disk are large enough to reduce the obstruction of the rising of the ultra-high purity gas by the rotating disk.

[0016] Preferably, a rotating groove is opened on the inner side of the fixing ring, the disc gear is rotatably connected to the rotating groove, the connecting rod is fixedly connected to the rotating disc, the fixing plates are symmetrically arranged, and there are no less than three fixing plates.

[0017] By adopting the above technical solution, the driving motor rotates at a faster speed, driving the rotating shaft and the breaking rod to rotate. The rotating shaft will also drive the rotating disk and the connecting rod to rotate. The connecting rod drives the disc gear to rotate on the inner side of the fixed ring, facilitating the subsequent up and down movement of the connecting tube.

[0018] Preferably, the slave gear is meshedly connected with the disc gear, the connecting tube is slidably connected with the inner ring of the fixed ring, a cavity is opened inside the connecting tube, the air intake pipe is connected with the cavity, the jet port is connected with the air intake pipe, and a plurality of jet ports are evenly installed.

[0019] By adopting the above technical solution, the external gas generating device is input through the air inlet pipe and then input into the jet nozzle through the cavity. The jet from the jet nozzle disturbs the ultra-high purity gas, making the contact time between the ultra-high purity gas and the semiconductor longer, reducing the situation where the densification effect is poor in local locations.

[0020] Preferably, a fixed plate is fixedly connected to the outer side of the connecting shaft, a pawl is rotatably connected to the fixed plate away from one side of the gear, a limiting rib is fixedly connected to one side of the fixed plate, and the limiting rib is close to the pawl.

[0021] By adopting the above technical solution, when the connecting shaft rotates, the connecting shaft will drive the fixed disk to rotate, and the fixed disk will drive the pawl to rotate. The limiting edge and the slot limit the pawl, so that the pawl and the fixed disk can only rotate in one direction.

[0022] Preferably, one side of the fixed inner block is fixedly connected to the disc gear, the fixed inner blocks are symmetrically arranged, and the number of the fixed inner blocks matches the number of the connecting shafts.

[0023] By adopting the above technical solution, the number of fixed inner blocks matches the number of connecting shafts, and the stability of the rotation of the rotating rod is also improved.

[0024] Preferably, the ferrule is located on the outside of the connecting shaft, the fixed disk is located on the inner ring of the ferrule, and the fixed disk is located on the side away from the fixed plate from the gear.

[0025] By adopting the above technical solution, the connecting tube can be easily moved up and down stably, and the jet nozzle can be kept stably jetting up and down, thereby better assisting the densification effect of ultra-high purity gas on semiconductors.

[0026] Preferably, a guide block is fixedly connected to the inner wall of the sedimentation cylinder, the guide block is located below the diverter plate, the inner side of the guide block is conical, and a filter is fixedly installed in the middle of the top of the placement plate.

[0027] By adopting the above technical solution, the guide block plays a guiding role, a part of the ultra-high purity gas passes through the filter to increase the density of the semiconductor, and the other part flows into the interior of the connecting tube, and the jet from the jet port disturbs the ultra-high purity gas.

[0028] Preferably, a conical cylinder is fixedly connected to the top of the rotating disk, and the conical cylinder is located in the middle of the top of the rotating disk. The conical cylinder is conical in shape, and the top end of the conical cylinder fits with the bottom surface of the placement plate.

[0029] By adopting the above technical solution, the conical tube also plays a guiding role, making it easier to introduce ultra-high purity gas to the position where the semiconductor is placed on the board.

[0030] Compared with the prior art, the present invention has the following beneficial effects: a flow balancing component is provided, the scattering rod rotates to scatter the ultra-high purity gas, the guide block and the conical tube play a guiding role, and the jet nozzle jets to disturb the ultra-high purity gas, so that the contact time between the ultra-high purity gas and the semiconductor is longer, the situation of poor densification effect at local positions is reduced, and the uniformity of densification is improved;

[0031] A flow balancing component is provided, and the driving motor is started to rotate at a relatively fast speed, driving the rotating shaft and the breaking rod to rotate. Through the inertia of rotation, the rotating rod can drive the connecting tube to move up and down reciprocatingly, and the connecting tube drives the inner jet port to move up and down. The air inlet pipe can adapt to the extension and contraction to cooperate with the movement of the connecting tube. At this time, the ultra-high purity gas is input through the air duct, and the breaking rod rotates to break up the ultra-high purity gas. The ultra-high purity gas flows upward through the diverter plate. A part of the ultra-high purity gas passes through the filter to densify the semiconductor, and the other part flows into the interior of the connecting tube. The jet port jets to disturb the ultra-high purity gas, so that the contact time between the ultra-high purity gas and the semiconductor is longer, reducing the situation of poor densification effect at a local position, and the reciprocating movement of the jet up and down avoids the situation of jetting at a single position for a long time, and also helps to improve the uniformity of densification, solves the problem of insufficient contact between the carbon source gas and the workpiece, so that the carbon source gas is directly discharged without densifying the entire workpiece, and there may be a situation where the local position of the workpiece has a poor densification effect or even incomplete densification, which reduces the problem of uniformity and integrity of the workpiece densification;

[0032] An auxiliary component is provided. When the connecting shaft rotates, the connecting shaft drives the fixed disk to rotate, and the fixed disk drives the pawl to rotate. The limit rib and the slot limit the pawl, so that the pawl and the fixed disk can only rotate in one direction, thereby improving the stability of the rotation of the rotating rod one, thereby improving the stability of the rotation of the rotating rod two and the up and down movement of the connecting tube, maintaining the stable up and down jetting of the jet port, thereby better assisting the ultra-high purity gas in the densification effect of the semiconductor. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a schematic diagram of the overall structure of the present invention in a front cross-sectional view;

[0034] Figure 2 It is a schematic diagram of the three-dimensional overall structure of the present invention;

[0035] Figure 3 This is a schematic diagram of the cross-sectional structure of the deposition tube of the present invention;

[0036] Figure 4 For the present invention Figure 1 The enlarged structural diagram at A in the middle;

[0037] Figure 5 For the present invention Figure 1 The enlarged structural diagram at B in the middle;

[0038] Figure 6 It is a schematic diagram of the structure of the current balancing component of the present invention;

[0039] Figure 7 For the present invention Figure 6 The enlarged structural diagram at C in the middle;

[0040] Figure 8 This is a schematic diagram of the connection tube descending according to the present invention;

[0041] Fig. 9 This is a schematic diagram of the auxiliary component structure of the present invention;

[0042] Fig.10 For the present invention Fig. 9 Enlarged structural diagram at point C in the middle.

[0043] In the figure: 1. bottom plate; 2. support column; 3. sedimentation cylinder; 4. exhaust pipe; 5. intake pipe; 6. sealing door; 7. flow equalization component; 71. drive motor; 72. rotating shaft; 73. breaking rod; 74. diverter plate; 75. rotating disk; 76. fixing ring; 77. disc gear; 78. connecting rod; 79. fixing plate; 710. connecting shaft; 711. slave gear; 712. rotating rod one; 713. rotating rod two; 714. connecting cylinder; 715. cavity; 716. jet nozzle; 8. auxiliary component; 81. fixed inner block; 82. ferrule; 83. slot; 84. fixing disk; 85. ratchet; 86. limit retaining edge; 9. mounting rod; 10. placement plate; 11. air duct; 12. guide block; 13. conical cylinder; 14. filter screen. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] See also Figure 1-10 The present invention provides a technical solution: a deposition chamber for a CVD device that is convenient for diversion, comprising a bottom plate 1 and a support column 2 fixedly installed at the bottom of the bottom plate 1, a deposition cylinder 3 is fixedly connected to the top of the bottom plate 1, and an exhaust pipe 4 is installed in the middle of the top of the deposition cylinder 3;

[0046] The air inlet pipe 5 is symmetrically installed on both sides of the top of the deposition tube 3, and a sealing door 6 is installed on the front side of the deposition tube 3;

[0047] The flow balancing component 7 is arranged in the middle of the deposition cylinder 3. The inner top surface of the deposition cylinder 3 is symmetrically fixed with a mounting rod 9. The bottom end of the mounting rod 9 is fixedly connected with a placement plate 10. The inner bottom surface of the deposition cylinder 3 is symmetrically connected with an air duct 11. The bottom end of the air duct 11 passes through the bottom plate 1 and is connected to the outside.

[0048] The flow balancing assembly 7 includes a driving motor 71, which is fixedly installed in the middle of the bottom of the bottom plate 1. The output end of the driving motor 71 passes through the bottom plate 1 and is fixedly connected to a rotating shaft 72 with the deposition tube 3. A breaking rod 73 is fixedly connected to the outer side of the middle part of the rotating shaft 72. A diverter plate 74 is fixedly connected to the lower inner part of the deposition tube 3. A rotating disk 75 is fixedly connected to the top of the rotating shaft 72. A fixing ring 76 is fixedly connected to the upper inner wall of the deposition tube 3.

[0049] The rotating shaft 72 is rotatably connected to the diverter plate 74 . A through hole is provided inside the diverter plate 74 . The diameter of the rotating disk 75 is smaller than the diameter of the inner wall of the deposition cylinder 3 . An air hole is provided inside the rotating disk 75 .

[0050] A disc gear 77 is connected to the inner side of the fixed ring 76, and a connecting rod 78 is fixedly connected to the bottom of the disc gear 77. The bottom end of the connecting rod 78 is connected to the rotating disk 75. A fixing plate 79 is symmetrically fixed to the top of the fixed ring 76. A connecting shaft 710 is rotatably connected to the side of the fixing plate 79 close to the mounting rod 9. A slave gear 711 is fixedly connected to the outer middle part of the connecting shaft 710, and a rotating rod 712 is fixedly connected to the end of the connecting shaft 710 away from the fixed plate 79.

[0051] A rotating groove is formed on the inner side of the fixing ring 76, and the disc gear 77 is rotatably connected to the rotating groove. The connecting rod 78 is fixedly connected to the rotating disk 75. The fixing plates 79 are symmetrically arranged, and there are no less than three fixing plates 79.

[0052] One end of the rotating rod 1 712 away from the connecting shaft 710 is rotatably connected to the rotating rod 2 713, and one end of the rotating rod 2 713 away from the rotating rod 1 712 is installed with a connecting tube 714. The rotating rod 2 713 is rotatably connected to the connecting tube 714, and the bottom end of the air inlet pipe 5 passes through the deposition tube 3 and is connected to the connecting tube 714. The inner side of the connecting tube 714 is fixedly installed with a jet nozzle 716.

[0053] The slave gear 711 is meshedly connected with the disc gear 77, the connecting tube 714 is slidably connected with the inner ring of the fixing ring 76, a cavity 715 is provided inside the connecting tube 714, the air intake pipe 5 is connected with the cavity 715, the jet port 716 is connected with the air intake pipe 5, and a plurality of jet ports 716 are evenly installed.

[0054] The inner wall of the sedimentation cylinder 3 is fixedly connected with a guide block 12 , which is located below the diverter plate 74 . The inner side of the guide block 12 is conical, and a filter screen 14 is fixedly installed in the middle of the top of the placement plate 10 .

[0055] A conical tube 13 is fixedly connected to the top of the rotating disk 75 . The conical tube 13 is located in the middle of the top of the rotating disk 75 . The conical tube 13 is conical in shape, and the top of the conical tube 13 fits with the bottom surface of the placement plate 10 .

[0056] Embodiment 1: Figure 1-8As shown, the sealing door 6 is opened, the semiconductor to be processed is placed in the middle of the top of the placement plate 10, the sealing door 6 is closed, the air inlet pipe 5 is connected to the external fan, the air duct 11 is connected to the external ultra-high purity gas output device, and ultra-high purity hydrogen can be used. The driving motor 71 rotates at a relatively fast speed, driving the rotating shaft 72 and the breaking rod 73 to rotate. The rotating shaft 72 will also drive the rotating disk 75 and the connecting rod 78 to rotate. The connecting rod 78 drives the disc gear 77 to rotate on the inner side of the fixed ring 76. The rotation of the fixed ring 76 drives the meshing slave gear 711 to rotate. The slave gear 711 drives the connecting shaft 710 and the rotating rod 1 712 to rotate. The rotating rod 1 712 drives the rotating rod 2 713 to rotate.

[0057] Through the inertia of rotation, the rotating rod 713 can drive the connecting tube 714 to move up and down reciprocatingly, and the connecting tube 714 drives the inner jet port 716 to move up and down. The air inlet pipe 5 can adapt to extension and contraction to cooperate with the movement of the connecting tube 714. At this time, ultra-high purity gas is input through the air duct 11, and the breaking rod 73 rotates to break up the ultra-high purity gas. The ultra-high purity gas flows upward through the diverter plate 74, and the guide block 12 and the conical tube 13 play a guiding role.

[0058] Part of the ultra-high purity gas passes through the filter 14 to densify the semiconductor, and the other part flows into the interior of the connecting tube 714. The jet from the jet outlet 716 disturbs the ultra-high purity gas, which makes the contact time between the ultra-high purity gas and the semiconductor longer, reducing the poor densification effect at local locations. The jet moves up and down reciprocatingly, avoiding the situation of jetting at a single location for a long time, and also helps to improve the uniformity of densification. It solves the problem of insufficient contact between the carbon source gas and the workpiece, so that the carbon source gas is directly discharged without densifying the workpiece as a whole. There may be a situation where the densification effect at local locations of the workpiece is poor, or even the densification is not complete, which reduces the uniformity and integrity of the workpiece densification.

[0059] An auxiliary component 8 is provided on the inner side of the fixed ring 76, and the auxiliary component 8 includes a fixed inner block 81 and a ring 82. A slot 83 is provided on the inner side of the ring 82. A fixed disk 84 is fixedly connected to the outer side of the connecting shaft 710. The fixed disk 84 is connected to a pawl 85 that rotates away from one side of the gear 711. A limiting rib 86 is fixedly connected to one side of the fixed disk 84, and the limiting rib 86 is close to the pawl 85.

[0060] One side of the fixed inner block 81 is fixedly connected to the disc gear 77 . The fixed inner blocks 81 are symmetrically arranged, and the number of the fixed inner blocks 81 matches the number of the connecting shafts 710 .

[0061] The collar 82 is located on the outer side of the connecting shaft 710 , and the fixing plate 84 is located on the inner ring of the collar 82 . The fixing plate 84 is located on the side away from the fixing plate 79 from the gear 711 .

[0062] Embodiment 2: Figure 9-10As shown, an auxiliary component 8 is provided. When the connecting shaft 710 rotates, the connecting shaft 710 drives the fixed disk 84 to rotate, and the fixed disk 84 drives the pawl 85 to rotate. The limiting retaining edge 86 and the slot 83 limit the pawl 85, so that the pawl 85 and the fixed disk 84 can only rotate in one direction, thereby improving the stability of the rotation of the rotating rod 1 712, thereby improving the stability of the rotation of the rotating rod 2 713 and the up and down movement of the connecting tube 714, maintaining the stable up and down jetting of the jet port 716, thereby better assisting the ultra-high purity gas in the densification effect on the semiconductor.

[0063] Working principle: When using the device, first, Figure 1-10 As shown, the sealing door 6 is opened, the semiconductor to be processed is placed in the middle of the top of the placement plate 10, the sealing door 6 is closed, the air inlet pipe 5 is connected to the external fan, the air duct 11 is connected to the external ultra-high purity gas output device, and the driving motor 71 is rotated at a relatively fast speed, driving the rotating shaft 72 and the breaking rod 73 to rotate, and the rotating shaft 72 will also drive the rotating disk 75 and the connecting rod 78 to rotate, and the connecting rod 78 drives the disc gear 77 to rotate on the inner side of the fixed ring 76, and the rotation of the fixed ring 76 drives the meshing slave gear 711 to rotate, and the slave gear 711 drives the connecting shaft 710 and the rotating rod 1 712 to rotate, and the rotating rod 1 712 drives the rotating rod 2 713 to rotate.

[0064] The connecting shaft 710 will also drive the fixed disk 84 to rotate, and the fixed disk 84 will drive the pawl 85 to rotate. The limiting edge 86 and the slot 83 limit the pawl 85, so that the pawl 85 and the fixed disk 84 can only rotate in one direction, thereby improving the stability of the rotation of the rotating rod 1 712, thereby improving the stability of the rotation of the rotating rod 2 713 and the up and down movement of the connecting tube 714, maintaining the stable up and down jetting of the jet port 716, thereby better assisting the ultra-high purity gas in the densification effect of the semiconductor.

[0065] Through the inertia of the rotation of the rotating rod 713, the rotating rod 713 can drive the connecting tube 714 to move back and forth up and down, and the connecting tube 714 drives the inner jet port 716 to move up and down. The air inlet pipe 5 can adapt to the extension and contraction to cooperate with the movement of the connecting tube 714. At this time, ultra-high purity gas is input through the air duct 11, and the breaking rod 73 rotates to break up the ultra-high purity gas.

[0066] The ultra-high purity gas flows upward through the diverter plate 74, and the guide block 12 and the conical tube 13 play a guiding role. A part of the ultra-high purity gas passes through the filter 14 to densify the semiconductor, and the other part flows into the interior of the connecting tube 714. The jet from the jet port 716 disturbs the ultra-high purity gas, making the contact time between the ultra-high purity gas and the semiconductor longer, reducing the poor densification effect at local locations, and the jet moves up and down to avoid the situation of jetting at a single location for a long time, which also helps to improve the uniformity of densification.

[0067] The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

[0068] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A deposition chamber for a CVD device that facilitates flow diversion, comprising a base plate (1) and a support column (2) fixedly mounted on the bottom of the base plate (1), a deposition cylinder (3) fixedly connected to the top of the base plate (1), and an exhaust pipe (4) mounted in the middle of the top of the deposition cylinder (3); It is characterized in that Also includes: An air inlet pipe (5) is symmetrically mounted on both sides of the top of the sedimentation cylinder (3); a sealing door (6) is mounted on one side of the front of the sedimentation cylinder (3); A flow balancing component (7) is arranged in the middle of the interior of the deposition cylinder (3); a mounting rod (9) is symmetrically fixed to the inner top surface of the deposition cylinder (3); a placement plate (10) is fixedly connected to the bottom end of the mounting rod (9); an air duct (11) is symmetrically connected to the inner bottom surface of the deposition cylinder (3); and the bottom end of the air duct (11) passes through the bottom plate (1) and is in communication with the outside; The flow balancing component (7) comprises a driving motor (71), the driving motor (71) being fixedly mounted in the middle of the bottom of the base plate (1), the output end of the driving motor (71) passing through the base plate (1) and the deposition cylinder (3) being fixedly connected to a rotating shaft (72), the outer side of the middle part of the rotating shaft (72) being fixedly connected to a breaking rod (73), the lower inner part of the deposition cylinder (3) being fixedly connected to a flow dividing plate (74), the top end of the rotating shaft (72) being fixedly connected to a rotating disk (75), and the upper inner wall of the deposition cylinder (3) being fixedly connected to a fixing ring (76); The inner side of the fixing ring (76) is connected to a disc gear (77), the bottom of the disc gear (77) is fixedly connected to a connecting rod (78), the bottom end of the connecting rod (78) is connected to the rotating disk (75), the top of the fixing ring (76) is symmetrically fixed with a fixing plate (79), the side of the fixing plate (79) close to the mounting rod (9) is rotatably connected to a connecting shaft (710), the middle outer side of the connecting shaft (710) is fixedly connected to a slave gear (711), and the end of the connecting shaft (710) away from the fixing plate (79) is fixedly connected to a rotating rod 1 (712); One end of the rotating rod 1 (712) away from the connecting shaft (710) is rotatably connected to the rotating rod 2 (713); one end of the rotating rod 2 (713) away from the rotating rod 1 (712) is installed with a connecting tube (714); the rotating rod 2 (713) is rotatably connected to the connecting tube (714); the bottom end of the air inlet pipe (5) passes through the deposition tube (3) and is connected to the connecting tube (714); an air jet (716) is fixedly installed on the inner side of the connecting tube (714); An auxiliary component (8) is arranged on the inner side of the fixing ring (76), and the auxiliary component (8) comprises a fixing inner block (81) and a ferrule (82), and a clamping groove (83) is provided on the inner side of the ferrule (82).

2. A deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: The rotating shaft (72) is rotatably connected to the diverter plate (74), a through hole is provided inside the diverter plate (74), the diameter of the rotating disk (75) is smaller than the diameter of the inner wall of the deposition cylinder (3), and an air hole is provided inside the rotating disk (75).

3. A deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: A rotation groove is formed on the inner side of the fixing ring (76), the disc gear (77) is rotationally connected to the rotation groove, the connecting rod (78) is fixedly connected to the rotating disc (75), the fixing plates (79) are symmetrically arranged, and the number of the fixing plates (79) is no less than three.

4. A deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: The slave gear (711) is meshingly connected with the disc gear (77), the connecting tube (714) is slidably connected with the inner ring of the fixing ring (76), a cavity (715) is provided inside the connecting tube (714), the air intake pipe (5) is connected with the cavity (715), the air jet (716) is connected with the air intake pipe (5), and a plurality of air jets (716) are evenly installed.

5. The deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: A fixed plate (84) is fixedly connected to the outside of the connecting shaft (710), a pawl (85) is rotatably connected to one side of the fixed plate (84) away from the gear (711), and a limit retaining edge (86) is fixedly connected to one side of the fixed plate (84), the limit retaining edge (86) being close to the pawl (85).

6. A deposition chamber for a CVD device that facilitates flow diversion according to claim 5, characterized in that: One side of the fixed inner block (81) is fixedly connected to the disc gear (77), the fixed inner blocks (81) are symmetrically arranged, and the number of the fixed inner blocks (81) matches the number of the connecting shafts (710).

7. A deposition chamber for a CVD device that facilitates flow diversion according to claim 6, characterized in that: The collar (82) is located on the outside of the connecting shaft (710), the fixed disk (84) is located on the inner ring of the collar (82), and the fixed disk (84) is located on a side away from the fixed plate (79) from the gear (711).

8. The deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: A guide block (12) is fixedly connected to the inner wall of the sedimentation cylinder (3), the guide block (12) is located below the diverter plate (74), the inner side of the guide block (12) is conical, and a filter screen (14) is fixedly installed in the middle of the top of the placement plate (10).

9. The deposition chamber for a CVD device that facilitates flow diversion according to claim 1, characterized in that: A conical cylinder (13) is fixedly connected to the top of the rotating disk (75). The conical cylinder (13) is located in the middle of the top of the rotating disk (75). The conical cylinder (13) is conical in shape, and the top of the conical cylinder (13) fits the bottom surface of the placement plate (10).

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