High-temperature reverse bias test device, system, and method for SiC MOSFET modules

Abstract

The present invention discloses a high-temperature reverse bias test device, system, and method for SiC MOSFET modules, relating to the technical field of high-temperature reverse bias testing of MOSFETs. The device comprises a drive circuit and a control circuit, wherein the drive circuit comprises a first single-pole double-throw switch and a second single-pole double-throw switch, wherein the fixed ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively connected to the gates of the upper-arm MOSFET tube and the lower-arm MOSFET tube in the MOSFET module to be tested; the control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state to perform a negative gate voltage aging test on the MOSFET tubes of the MOSFET module; or the control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in a second working state to perform a zero gate voltage aging test on the MOSFET tubes of the MOSFET module. The present invention can simultaneously apply negative gate stress to each MOSFET in the MOSFET module during the high-temperature reverse bias test, perform a thorough aging test on each MOSFET in the MOSFET module, and screen out individual MOSFETs with gate faults.

Description

Technical Field

[0001] The present invention relates to the technical field of MOSFET high-temperature reverse bias testing, and in particular to a high-temperature reverse bias testing device, system, and method for a SiC MOSFET module. Background Art

[0002] High-temperature reverse bias testing is mainly used in the field of power semiconductors. It tests the aging performance of products before they are shipped off the production line. The products are classified and processed based on the test results, and the test results are recorded and saved for subsequent inquiry and traceability. The high-temperature reverse bias test detects the weaknesses of the chip passivation layer, passivation topology, and chip edge seal. It focuses on the migration of ionic contaminants related to power semiconductor production under the influence of temperature and field. This migration will increase surface charge, increase leakage current, and cause threshold voltage degradation. The assembly process and the difference in the coefficient of thermal expansion (CTEs) of the assembly materials have a significant impact on the integrity of the passivation layer, making the power semiconductor susceptible to contamination by external contaminants, which will also cause an increase in leakage current.

[0003] SiC MOSFET is a typical power semiconductor. When existing high-temperature reverse bias test equipment tests SiC MOSFET modules (a combination of multiple SiC MOSFETs), the aging test of individual MOSFETs is insufficient, making it difficult to screen out individual MOSFETs with gate failures. Summary of the Invention

[0004] Embodiments of the present invention provide a high-temperature reverse bias test device, system, and method for a SiC MOSFET module to address the technical problem in the related art that existing high-temperature reverse bias test devices for SiC MOSFET modules do not perform sufficient aging tests on individual MOSFETs and are difficult to screen out individual MOSFETs with gate faults.

[0005] In a first aspect, a high-temperature reverse bias test device for a SiC MOSFET module is provided, comprising:

[0006] A drive circuit comprising a first single-pole double-throw switch and a second single-pole double-throw switch, wherein a fixed terminal of the first single-pole double-throw switch is connected to the gate of an upper-arm MOSFET tube in a MOSFET module to be tested, and a fixed terminal of the second single-pole double-throw switch is connected to the gate of a lower-arm MOSFET tube in the MOSFET module to be tested;

[0007] a control circuit electrically connected to the first single-pole double-throw switch and the second single-pole double-throw switch, and configured to:

[0008] The control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, so as to perform a negative gate voltage aging test on the MOSFET tube of the MOSFET module;

[0009] Alternatively, the control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in the second working state, so as to perform a zero gate voltage aging test on the MOSFET tube of the MOSFET module.

[0010] In some embodiments, the driving circuit further includes a test power supply positive electrode, a test power supply negative electrode, a ground line, an upper bridge voltage source, and a lower bridge voltage source;

[0011] The positive electrode of the test power supply is connected to the drain electrode of the upper bridge arm MOSFET tube in the MOSFET module to be tested, the negative electrode of the test power supply is connected to the source electrode of the lower bridge arm MOSFET tube in the MOSFET module to be tested, and the ground wire is connected to the source electrode of the upper bridge arm MOSFET tube and the drain electrode of the lower bridge arm MOSFET tube in the MOSFET module to be tested;

[0012] When the control circuit controls the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, the movable end of the first single-pole double-throw switch is connected to the upper bridge voltage source, the movable end of the second single-pole double-throw switch is connected to the lower bridge voltage source, and the upper bridge voltage source and the lower bridge voltage source are both set to negative voltages;

[0013] When the control circuit controls the first single-pole double-throw switch and the second single-pole double-throw switch to be in the second working state, the movable end of the first single-pole double-throw switch is connected to the ground wire, and the movable end of the second single-pole double-throw switch is connected to the negative electrode of the test power supply.

[0014] In some embodiments, the drive circuit further includes a first sampling resistor and a second sampling resistor, wherein the first sampling resistor is arranged between the positive electrode of the test power supply and the drain of the upper-arm MOSFET tube in the MOSFET module to be tested, and the second sampling resistor is arranged between the negative electrode of the test power supply and the source of the lower-arm MOSFET tube in the MOSFET module to be tested.

[0015] In some embodiments, the control circuit includes a first sampling unit, a second sampling unit, a first switch driving unit, a second switch driving unit, and a controller;

[0016] The first sampling unit is connected to both ends of the first sampling resistor and the controller, and the second sampling unit is connected to both ends of the second sampling resistor and the controller;

[0017] The first switch driving unit is connected to the first single-pole double-throw switch and the controller, and the second switch driving unit is connected to the second single-pole double-throw switch and the controller.

[0018] In some embodiments, the high-temperature reverse bias testing device for the SiC MOSFET module further includes:

[0019] A protection circuit is provided between the driving circuit and the MOSFET module to be tested.

[0020] In some embodiments, the protection circuit includes a first current limiting resistor, a second current limiting resistor, a third current limiting resistor, and a fourth current limiting resistor;

[0021] The first current limiting resistor is provided between the first sampling resistor and the drain of the upper bridge arm MOSFET tube in the MOSFET module to be tested;

[0022] The second current limiting resistor is provided between the fixed terminal of the first single-pole double-throw switch and the gate of the upper bridge arm MOSFET tube in the MOSFET module to be tested;

[0023] The third current limiting resistor is provided between the fixed terminal of the second single-pole double-throw switch and the gate of the lower bridge arm MOSFET tube in the MOSFET module to be tested;

[0024] The fourth current limiting resistor is provided between the second sampling resistor and the source of the lower bridge arm MOSFET tube in the MOSFET module to be tested.

[0025] In some embodiments, the protection circuit further includes a first overcurrent circuit breaker element and a second overcurrent circuit breaker element;

[0026] The first overcurrent circuit breaker element is provided between the first current limiting resistor and the drain of the upper bridge arm MOSFET tube in the MOSFET module to be tested;

[0027] The second overcurrent cutoff element is provided between the fourth current limiting resistor and the source of the lower bridge arm MOSFET tube in the MOSFET module to be tested.

[0028] In some embodiments, the first overcurrent circuit breaker element and the second overcurrent circuit breaker element are fuses.

[0029] In a second aspect, a high-temperature reverse bias test system for a SiC MOSFET module is provided, comprising the aforementioned high-temperature reverse bias test device for a SiC MOSFET module.

[0030] In a third aspect, a high-temperature reverse bias test method for a SiC MOSFET module is provided, comprising the following steps:

[0031] Controlling the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, and performing a negative gate voltage aging test on the MOSFET tube of the MOSFET module;

[0032] Alternatively, the first single-pole double-throw switch and the second single-pole double-throw switch are controlled to be in the second working state, and a zero gate voltage aging test is performed on the MOSFET tube of the MOSFET module.

[0033] The beneficial effects brought about by the technical solution provided by the present invention include:

[0034] An embodiment of the present invention provides a high-temperature reverse bias test device, system, and method for a SiC MOSFET module. The high-temperature reverse bias test device is provided with a drive circuit and a control circuit. The drive circuit is provided with a first single-pole double-throw switch and a second single-pole double-throw switch. The fixed ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively connected to the gates of the upper-arm MOSFET tube and the lower-arm MOSFET tube in the MOSFET module to be tested. In addition, the control circuit controls the working states of the first single-pole double-throw switch and the second single-pole double-throw switch, and performs a negative gate voltage aging test and a zero gate voltage aging test on each MOSFET in the MOSFET module. That is, when each MOSFET in the MOSFET module is subjected to a high-temperature reverse bias test, a negative gate voltage stress is simultaneously applied to the gate, and a sufficient aging test is performed on each MOSFET in the MOSFET module to screen out individual MOSFETs with gate faults. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A schematic structural diagram of a high-temperature reverse bias test device for a SiC MOSFET module provided by an embodiment of the present invention;

[0037] Figure 2 A flowchart of a high-temperature reverse bias testing method for a SiC MOSFET module provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0039] An embodiment of the present invention provides a high-temperature reverse bias test device for a SiC MOSFET module, which can solve the technical problem that existing high-temperature reverse bias test devices for SiC MOSFET modules do not perform sufficient aging tests on SiC MOSFET modules and are difficult to screen out individual MOSFETs with gate faults.

[0040] See also Figure 1 As shown, an embodiment of the present invention provides a high-temperature reverse bias test device for a SiC MOSFET module, including: a drive circuit and a control circuit.

[0041] The drive circuit includes a first single-pole double-throw switch S1 and a second single-pole double-throw switch S2, wherein the fixed end of the first single-pole double-throw switch S1 is connected to the gate of the upper-arm MOSFET tube Q1 in the MOSFET module to be tested, and the fixed end of the second single-pole double-throw switch S2 is connected to the gate of the lower-arm MOSFET tube Q2 in the MOSFET module to be tested.

[0042] The control circuit is electrically connected to the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2, and is configured as follows:

[0043] The control circuit is used to control the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to be in a first working state, so as to perform a negative gate voltage aging test on the MOSFET module;

[0044] Alternatively, the control circuit is used to control the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to be in the second working state, so as to perform a zero gate voltage aging test on the MOSFET module.

[0045] Specifically, see Figure 1 As shown, the driving circuit in the embodiment of the present invention further includes a test power supply positive electrode V+, a test power supply negative electrode V-, a ground line GND, an upper bridge voltage source HVGS, and a lower bridge voltage source LVGS. For example, the test power supply positive electrode V+ can be set to 400V, and the test power supply negative electrode V- can be set to -400V.

[0046] The positive electrode V+ of the test power supply is connected to the drain of the upper arm MOSFET tube Q1 in the MOSFET module to be tested, the negative electrode V- of the test power supply is connected to the source of the lower arm MOSFET tube Q2 in the MOSFET module to be tested, and the ground wire GND is connected to the source of the upper arm MOSFET tube Q1 and the drain of the lower arm MOSFET tube Q2 in the MOSFET module to be tested.

[0047] When the control circuit controls the first SPDT switch S1 and the second SPDT switch S2 to be in a first operating state, the idle terminal of the first SPDT switch S1 is connected to the upper bridge voltage source HVGS, and the idle terminal of the second SPDT switch S2 is connected to the lower bridge voltage source LVGS. Both the upper bridge voltage source HVGS and the lower bridge voltage source LVGS are set to negative voltages. At this point, the gate voltage (Vgs) of the upper and lower arm MOSFETs is negative, enabling a negative gate voltage aging test.

[0048] When the control circuit controls the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to be in the second working state, the active end of the first single-pole double-throw switch S1 is connected to the ground wire GND, and the active end of the second single-pole double-throw switch S2 is connected to the negative electrode V- of the test power supply. At this time, the gates of the upper-arm MOSFET tube Q1 and the lower-arm MOSFET tube Q2 are connected to the corresponding source electrodes. For MOSFET tubes, high-temperature leakage is usually less than 100uA, and the voltage difference between the gate and source is within 100mV, which has little effect on the shutdown and performance of the MOSFET tube. It can be considered that a zero-gate voltage aging test is being performed. It should be noted that during the entire test process, it is necessary to ensure that the MOSFET module to be tested is in a high-temperature environment at a certain temperature.

[0049] The high-temperature reverse bias test device of the SiC MOSFET module in the embodiment of the present invention is provided with a drive circuit and a control circuit. The drive circuit is provided with a first single-pole double-throw switch and a second single-pole double-throw switch. The fixed ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively connected to the gates of the upper-arm MOSFET tube and the lower-arm MOSFET tube in the MOSFET module to be tested. In addition, the control circuit controls the working states of the first single-pole double-throw switch and the second single-pole double-throw switch, and performs a negative gate voltage aging test and a zero gate voltage aging test on each MOSFET in the MOSFET module. That is, when each MOSFET in the MOSFET module is subjected to a high-temperature reverse bias test, a negative gate voltage stress is simultaneously applied to the gate, and a full aging test is performed on each MOSFET in the MOSFET module to screen out individual MOSFETs with gate faults, thereby ensuring

[0050] As an optional implementation, in one embodiment of the invention, see Figure 1 As shown, the driving circuit also includes a first sampling resistor R C1 and the second sampling resistor R C2 , the first sampling resistor R C1 The second sampling resistor R is provided between the positive electrode V+ of the test power supply and the drain electrode of the upper bridge arm MOSFET tube Q1 in the MOSFET module to be tested. C2 It is provided between the negative electrode of the test power supply and the source electrode of the lower bridge arm MOSFET tube Q2 in the MOSFET module to be tested. C1 and the second sampling resistor R C2 The current in the test circuit can be collected in real time to ensure test safety.

[0051] Further, see Figure 1 As shown, the control circuit includes a first sampling unit, a second sampling unit, a first switch driving unit, a second switch driving unit and a controller.

[0052] The first sampling unit and the first sampling resistor R C1 The two ends of the second sampling unit are connected to the controller, and the second sampling resistor R C2 The first sampling unit and the second sampling unit respectively collect the first sampling resistance R C1 and the second sampling resistor R C2 The voltage across both ends of the resistor R is sent to the controller for calculation to obtain the voltage flowing through the first sampling resistor R C1 and the second sampling resistor R C2 of current.

[0053] The first switch drive unit is connected to the first single-pole double-throw switch S1 and the controller, and the second switch drive unit is connected to the second single-pole double-throw switch S2 and the controller. Optionally, the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 are both relay switches, and the controller sends a control signal to the first switch drive unit and the second switch drive unit. The first switch drive unit and the second switch drive unit control the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to operate according to the control signal, thereby entering a desired working state.

[0054] As an optional implementation, in one embodiment of the invention, see Figure 1As shown, the high-temperature reverse bias test device for the SiC MOSFET module further includes a protection circuit, which is provided between the drive circuit and the MOSFET module to be tested. The protection circuit is used to protect the drive circuit to prevent the drive circuit from being damaged by excessive current.

[0055] Further, see Figure 1 As shown, the protection circuit includes a first current limiting resistor R X1 , the second current limiting resistor R X2 , the third current limiting resistor R X3 and the fourth current limiting resistor R X4 .

[0056] The first current limiting resistor R X1 Set at the first sampling resistor R C1 Between the drain of the upper-arm MOSFET tube Q1 in the MOSFET module to be tested;

[0057] The second current limiting resistor R X2 Provided between the fixed terminal of the first single-pole double-throw switch S1 and the gate of the upper-arm MOSFET tube Q1 in the MOSFET module to be tested;

[0058] The third current limiting resistor R X3 Provided between the fixed terminal of the second single-pole double-throw switch S1 and the gate of the lower bridge arm MOSFET tube Q2 in the MOSFET module to be tested;

[0059] The fourth current limiting resistor R X4 Set at the second sampling resistor R C2 and the source of the lower-arm MOSFET tube Q2 in the MOSFET module to be tested.

[0060] Further, see Figure 1 As shown, the protection circuit further includes a first overcurrent circuit breaker element F1 and a second overcurrent circuit breaker element F2. The first overcurrent circuit breaker element F1 is provided between the first current limiting resistor R X1 and the drain of the upper bridge arm MOSFET tube Q1 in the MOSFET module to be tested. The second overcurrent cutoff element F2 is provided between the fourth current limiting resistor R X4 and the source of the lower bridge arm MOSFET tube Q2 in the MOSFET module to be tested. Optionally, the first overcurrent circuit breaker element F1 and the second overcurrent circuit breaker element F2 are fuses, which are low in cost and easy to use.

[0061] The embodiment of the present invention further provides a high-temperature reverse bias test system for SiC MOSFET modules, including the aforementioned high-temperature reverse bias test device for SiC MOSFET modules. The high-temperature reverse bias test device for SiC MOSFET modules includes: a drive circuit and a control circuit.

[0062] The drive circuit includes a first single-pole double-throw switch S1 and a second single-pole double-throw switch S2, wherein the fixed end of the first single-pole double-throw switch S1 is connected to the gate of the upper-arm MOSFET tube Q1 in the MOSFET module to be tested, and the fixed end of the second single-pole double-throw switch S2 is connected to the gate of the lower-arm MOSFET tube Q2 in the MOSFET module to be tested.

[0063] The control circuit is electrically connected to the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2, and is configured as follows:

[0064] The control circuit is used to control the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to be in a first working state, so as to perform a negative gate voltage aging test on the MOSFET module;

[0065] Alternatively, the control circuit is used to control the first single-pole double-throw switch S1 and the second single-pole double-throw switch S2 to be in the second working state, so as to perform a zero gate voltage aging test on the MOSFET module.

[0066] Specifically, see Figure 1 As shown, the driving circuit in the embodiment of the present invention further includes a test power supply positive electrode V+, a test power supply negative electrode V-, a ground line GND, an upper bridge voltage source HVGS, and a lower bridge voltage source LVGS. For example, the test power supply positive electrode V+ can be set to 400V, and the test power supply negative electrode V- can be set to -400V.

[0067] The positive electrode V+ of the test power supply is connected to the drain of the upper arm MOSFET tube Q1 in the MOSFET module to be tested, the negative electrode V- of the test power supply is connected to the source of the lower arm MOSFET tube Q2 in the MOSFET module to be tested, and the ground wire GND is connected to the source of the upper arm MOSFET tube Q1 and the drain of the lower arm MOSFET tube Q2 in the MOSFET module to be tested.

[0068] When the control circuit controls the first SPDT switch S1 and the second SPDT switch S2 to be in a first operating state, the idle terminal of the first SPDT switch S1 is connected to the upper bridge voltage source HVGS, and the idle terminal of the second SPDT switch S2 is connected to the lower bridge voltage source LVGS. Both the upper bridge voltage source HVGS and the lower bridge voltage source LVGS are set to negative voltages. At this point, the gate voltage (Vgs) of the upper and lower arm MOSFETs is negative, enabling a negative gate voltage aging test.

[0069] When the control circuit controls the first SPDT switch S1 and the second SPDT switch S2 to be in the second operating state, the idle terminal of the first SPDT switch S1 is connected to the ground line GND, and the idle terminal of the second SPDT switch S2 is connected to the negative electrode V- of the test power supply. At this time, the gates of the upper-arm MOSFET Q1 and the lower-arm MOSFET Q2 are connected to their corresponding sources. For MOSFETs, high-temperature leakage is typically less than 100uA, and the voltage difference between the gate and source is within 100mV. This has little impact on the shutdown and performance of the MOSFETs, and it can be considered that a zero-gate voltage aging test is being performed.

[0070] In the high-temperature reverse bias test system for a SiC MOSFET module in an embodiment of the present invention, a high-temperature reverse bias test device is provided with a drive circuit and a control circuit. The drive circuit is provided with a first single-pole double-throw switch and a second single-pole double-throw switch. The fixed ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively connected to the gates of the upper-arm MOSFET tube and the lower-arm MOSFET tube in the MOSFET module to be tested. In addition, the control circuit controls the working states of the first single-pole double-throw switch and the second single-pole double-throw switch, and performs a negative gate voltage aging test and a zero gate voltage aging test on each MOSFET in the MOSFET module. That is, when each MOSFET in the MOSFET module is subjected to a high-temperature reverse bias test, a negative gate voltage stress is simultaneously applied to the gate, and a sufficient aging test is performed on each MOSFET in the MOSFET module to screen out individual MOSFETs with gate faults.

[0071] See also Figure 2 As shown, an embodiment of the present invention further provides a high-temperature reverse bias test method for a SiC MOSFET module, comprising the following steps:

[0072] Step S10, controlling the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, and performing a negative gate voltage aging test on the MOSFET tube of the MOSFET module;

[0073] Step S20 , or controlling the first single-pole double-throw switch and the second single-pole double-throw switch to be in the second working state, performing a zero gate voltage aging test on the MOSFET tube of the MOSFET module.

[0074] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper" and "lower" is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. Unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be internal communication between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0075] It should be noted that, in the present invention, relational terms such as "first" and "second" are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprising a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element.

[0076] The foregoing description is intended only to provide specific embodiments of the present invention, which will enable those skilled in the art to understand and implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not intended to be limited to the embodiments shown herein, but is to be construed in the widest possible manner consistent with the principles and novel features of the present invention.

Claims

1. A high-temperature reverse bias test device for SiC MOSFET modules, characterized in that: include: A drive circuit comprising a first single-pole double-throw switch and a second single-pole double-throw switch, wherein a fixed terminal of the first single-pole double-throw switch is connected to the gate of an upper-arm MOSFET tube in a MOSFET module to be tested, and a fixed terminal of the second single-pole double-throw switch is connected to the gate of a lower-arm MOSFET tube in the MOSFET module to be tested; a control circuit electrically connected to the first single-pole double-throw switch and the second single-pole double-throw switch, and configured to: The control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, so as to perform a negative gate voltage aging test on the MOSFET tube of the MOSFET module; Or the control circuit is used to control the first single-pole double-throw switch and the second single-pole double-throw switch to be in a second working state, so as to perform a zero gate voltage aging test on the MOSFET tube of the MOSFET module; The driving circuit further includes a test power supply positive electrode, a test power supply negative electrode, a ground line, an upper bridge voltage source and a lower bridge voltage source; The positive electrode of the test power supply is connected to the drain electrode of the upper bridge arm MOSFET tube in the MOSFET module to be tested, the negative electrode of the test power supply is connected to the source electrode of the lower bridge arm MOSFET tube in the MOSFET module to be tested, and the ground wire is connected to the source electrode of the upper bridge arm MOSFET tube and the drain electrode of the lower bridge arm MOSFET tube in the MOSFET module to be tested; When the control circuit controls the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, the movable end of the first single-pole double-throw switch is connected to the upper bridge voltage source, the movable end of the second single-pole double-throw switch is connected to the lower bridge voltage source, and the upper bridge voltage source and the lower bridge voltage source are both set to negative voltages; When the control circuit controls the first single-pole double-throw switch and the second single-pole double-throw switch to be in the second working state, the movable end of the first single-pole double-throw switch is connected to the ground wire, and the movable end of the second single-pole double-throw switch is connected to the negative electrode of the test power supply.

2. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 1, wherein: The drive circuit also includes a first sampling resistor and a second sampling resistor, wherein the first sampling resistor is arranged between the positive electrode of the test power supply and the drain of the upper-arm MOSFET tube in the MOSFET module to be tested, and the second sampling resistor is arranged between the negative electrode of the test power supply and the source of the lower-arm MOSFET tube in the MOSFET module to be tested.

3. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 2, wherein: The control circuit includes a first sampling unit, a second sampling unit, a first switch driving unit, a second switch driving unit and a controller; The first sampling unit is connected to both ends of the first sampling resistor and the controller, and the second sampling unit is connected to both ends of the second sampling resistor and the controller; The first switch driving unit is connected to the first single-pole double-throw switch and the controller, and the second switch driving unit is connected to the second single-pole double-throw switch and the controller.

4. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 2, wherein: Also includes: A protection circuit is provided between the driving circuit and the MOSFET module to be tested.

5. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 4, characterized in that: The protection circuit includes a first current limiting resistor, a second current limiting resistor, a third current limiting resistor and a fourth current limiting resistor; The first current limiting resistor is provided between the first sampling resistor and the drain of the upper bridge arm MOSFET tube in the MOSFET module to be tested; The second current limiting resistor is provided between the fixed terminal of the first single-pole double-throw switch and the gate of the upper bridge arm MOSFET tube in the MOSFET module to be tested; The third current limiting resistor is provided between the fixed terminal of the second single-pole double-throw switch and the gate of the lower bridge arm MOSFET tube in the MOSFET module to be tested; The fourth current limiting resistor is provided between the second sampling resistor and the source of the lower bridge arm MOSFET tube in the MOSFET module to be tested.

6. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 5, characterized in that: The protection circuit further includes a first overcurrent circuit breaker element and a second overcurrent circuit breaker element; The first overcurrent circuit breaker element is provided between the first current limiting resistor and the drain of the upper bridge arm MOSFET tube in the MOSFET module to be tested; The second overcurrent cutoff element is provided between the fourth current limiting resistor and the source of the lower bridge arm MOSFET tube in the MOSFET module to be tested.

7. The high-temperature reverse bias test device for SiC MOSFET modules according to claim 6, characterized in that: The first overcurrent circuit breaking element and the second overcurrent circuit breaking element are fuses.

8. A high-temperature reverse bias test system for SiC MOSFET modules, characterized in that: A high-temperature reverse bias testing device for a SiC MOSFET module comprising the device described in any one of claims 1 to 7.

9. A high-temperature reverse bias test method for a SiC MOSFET module, using the high-temperature reverse bias test circuit for a SiC MOSFET module according to claim 1, characterized in that: The following steps are involved: Controlling the first single-pole double-throw switch and the second single-pole double-throw switch to be in a first working state, and performing a negative gate voltage aging test on the MOSFET tube of the MOSFET module; Alternatively, the first single-pole double-throw switch and the second single-pole double-throw switch are controlled to be in the second working state, and a zero gate voltage aging test is performed on the MOSFET tube of the MOSFET module.

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