Laser chip testing method and device

Abstract

The invention provides a laser chip testing method and device, and relates to the technical field of semiconductor lasers. The method comprises: providing a baffle assembly, which comprises two baffles arranged at intervals; providing a detection device, which can detect power and light parameters, and the light parameters include at least one of wavelength, spot area and divergence angle; directing the light-emitting end of a single laser chip to be detected on a stacked array toward a receiving port of two baffles in a parallel state, reducing the distance between the receiving port and the single laser chip to be detected from the distance L between the receiving port and the single laser chip to be detected as a starting point, and simultaneously detecting the power of the single laser chip to be detected until the power of the single laser chip to be detected remains unchanged, and then stopping changing the distance between the receiving port and the single laser chip to be detected; keeping the opening of the receiving port unchanged, rotating the two baffles to expand the opening of the detection port, and simultaneously detecting the divergence angle of the single laser chip to be detected, and stopping rotating the baffle when the divergence angle detected remains unchanged.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor lasers, and in particular to a laser chip testing method and device. Background Art

[0002] Conventional array products test the power and wavelength of the entire array and are unable to distinguish damage to individual laser chips and poor doping during the packaging process, which in turn affects the reliability and service life of the entire semiconductor laser. Summary of the invention

[0003] The object of the present invention is to provide a laser chip testing method and device to alleviate the technical problem that a single laser chip cannot be detected in the existing stacked array detection process.

[0004] In a first aspect, the present invention provides a laser chip testing method, comprising:

[0005] Step S1. Provide a baffle assembly, the baffle assembly comprising two baffles arranged at intervals; one end of the two baffles is opened to form a detection port, and the other end opposite to the two baffles is opened to form a receiving port;

[0006] Providing a detection device, the detection device can detect power and light parameters, the light parameters including at least one of wavelength, spot area and divergence angle; the detection device is located at one side of the detection port;

[0007] Step S2. Direct the light-emitting end of a single laser chip to be detected on the stacked array toward the receiving ports of two parallel baffles, wherein the spacing direction of the two baffles is the same as the arrangement direction of the multiple laser chips on the stacked array;

[0008] Step S3. Starting from the distance L between the receiving port and the single laser chip to be detected, gradually reduce the distance between the receiving port and the single laser chip to be detected, and detect the power of the single laser chip to be detected at the same time, until the power of the single laser chip to be detected remains unchanged, and then stop changing the distance between the receiving port and the single laser chip to be detected;

[0009] Step S4. Keep the opening of the receiving port unchanged, rotate the two baffles to expand the opening of the detection port, and simultaneously detect the optical parameters of the single laser chip to be detected. When the detected optical parameters remain unchanged, stop rotating the baffles.

[0010] Furthermore, in step S2, one of the baffle assembly and the stack is fixed, and the other is moved, so that the center line of the light-emitting end of the single laser chip to be detected on the stack is aligned with the center lines of the receiving ports of the two baffles in parallel.

[0011] Furthermore, the step S2 comprises the steps of:

[0012] An image acquisition mechanism is provided, which is used to acquire image information of a single laser chip on a stacked array, and obtain position information of the single laser chip to be detected based on the image information; according to the position information of the single laser chip to be detected and the position information of the baffle assembly, the center line of the light-emitting end of the single laser chip to be detected on the stacked array is adjusted to align with the center lines of the receiving ports of the two baffles in a parallel state.

[0013] Furthermore, the step S2 includes the following steps before the step of aligning the single laser chip to be detected on the stacked array with the receiving ports of the two baffles in a parallel state:

[0014] Obtain the width a of a single laser chip on the stack and the spacing b between two adjacent laser chips;

[0015] The distance d between the two parallel baffles is adjusted to a≤d≤a+b.

[0016] In a second aspect, the present invention provides a laser chip testing device for implementing the above-mentioned laser chip testing method;

[0017] The laser chip testing device comprises a fixture, a baffle assembly and a detection device;

[0018] The clamp is used to fix the stacked array;

[0019] The baffle assembly comprises two baffles arranged at intervals; one end of the two baffles is opened to form a detection port, and the other end opposite to the two baffles is opened to form a receiving port; the baffle assembly is located between the fixture and the detection device; the angle between the two baffles is adjustable so that the opening of the detection port can be changed while the opening of the receiving port remains unchanged;

[0020] The detection device is capable of detecting power and light parameters, wherein the light parameters include at least one of wavelength, spot area and divergence angle;

[0021] In the arrangement direction of the multiple laser chips on the stacked array, the fixture and the baffle assembly can generate relative movement, so that the light-emitting end of the single laser chip to be detected on the stacked array faces the receiving ports of the two baffles in a parallel state;

[0022] In the light emitting direction of the single laser chip to be detected, the fixture and the baffle assembly can generate relative movement to adjust the distance between the receiving port and the single laser chip to be detected.

[0023] Furthermore, the surfaces of the two baffles facing each other are covered with reflective films.

[0024] Furthermore, the baffle assembly further comprises a fixed plate, the edge of the baffle forming the receiving port is connected with a rotating shaft, and the rotating shaft is rotatably connected to the fixed plate;

[0025] The fixing plate is also provided with an arc-shaped guide groove, and the baffle is provided with a guide protrusion, and the guide protrusion is located in the arc-shaped guide groove to guide the baffle to rotate around the rotating shaft.

[0026] Furthermore, a slide groove is provided on the fixed plate, a slider is slidably connected in the slide groove, the rotating shaft is rotatably connected to the slider, and the distance between the two baffles is changed by sliding the slider.

[0027] Furthermore, the laser chip testing device further comprises a first moving mechanism, which drives the baffle assembly to move along the light emitting direction of the single laser chip to be tested;

[0028] The laser chip testing device further comprises a second moving mechanism, which drives the first moving mechanism and the baffle assembly to move together along the arrangement direction of the plurality of laser chips on the stack.

[0029] Furthermore, the detection device includes a power meter, an optical parameter detection device and a switching mechanism, the power meter and the optical parameter detection device are respectively connected to the switching mechanism, and the switching mechanism is used to make the detection end of one of the power meter and the optical parameter detection device face the detection port; wherein the optical parameter detection device includes at least one of a spectrometer, a spot analyzer or a charge coupled device.

[0030] The present invention has at least the following advantages or beneficial effects:

[0031] The laser chip testing method provided by the present invention comprises: step S1. providing a baffle assembly, the baffle assembly comprising two baffles arranged at intervals; one end of the two baffles is opened to form a detection port, and the other end opposite to the two baffles is opened to form a receiving port; providing a detection device, the detection device can detect power and light parameters, the light parameters include at least one of wavelength, spot area and divergence angle; the detection device is located on one side of the detection port; step S2. directing the light output end of a single laser chip to be detected on the stacked array toward the receiving ports of the two baffles in a parallel state, wherein the spacing direction of the two baffles is parallel to the stacked array. The arrangement directions of the multiple laser chips are the same; step S3. Starting from the distance L between the receiving port and the single laser chip to be detected, gradually reduce the distance between the receiving port and the single laser chip to be detected, and simultaneously detect the power of the single laser chip to be detected until the power of the single laser chip to be detected remains unchanged, then stop changing the distance between the receiving port and the single laser chip to be detected; step S4. Keep the opening of the receiving port unchanged, rotate the two baffles to expand the opening of the detection port, and simultaneously detect the optical parameters of the single laser chip to be detected, and stop rotating the baffles when the detected optical parameters remain unchanged.

[0032] In the test method, the distance between the receiving port and the single laser chip to be detected is gradually reduced, and the power of the single laser chip to be detected is detected at the same time, until the power of the single laser chip to be detected remains unchanged, indicating that the current detection port only receives the light emitted by the single laser chip to be detected, and the light emitted by the single laser chip adjacent to the single laser chip to be detected will be blocked by the baffle to improve the detection accuracy. At the same time, when detecting the light parameters, the two parallel baffles are gradually expanded. When the detected light parameters remain unchanged, the rotation of the baffles is stopped. The expansion angle of the current two baffles is the minimum angle that can detect the light parameters of the single laser chip to be detected. At this time, the detection port is opened to the minimum, which can minimize the external interference light from entering between the two baffles from the detection port, thereby affecting the performance test of the single laser chip to be detected. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0034] Figure 1 A schematic diagram of step S2 of the laser chip testing method provided by an embodiment of the present invention;

[0035] Figure 2A schematic diagram of step S3 of the laser chip testing method provided by an embodiment of the present invention;

[0036] Figure 3 A schematic diagram of step S4 of the laser chip testing method provided by an embodiment of the present invention;

[0037] Figure 4 A schematic diagram of a laser chip testing device provided in an embodiment of the present invention.

[0038] Icons: 1- baffle; 2- detection port; 3- receiving port; 4- detection device; 5- stacked array; 6- single laser chip to be detected; 7- fixture; 8- first moving mechanism; 9- second moving mechanism; 10- fixed plate; 11- arc guide groove; 12- slide groove; 13- slider; 14- rotating shaft. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0040] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0042] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0043] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0044] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] The laser chip in the present invention can be a bar laser chip or a single-tube laser chip.

[0046] The laser chip testing method provided by the present invention comprises:

[0047] like Figure 1-Figure 4 As shown, step S1. Provide a baffle assembly, the baffle assembly includes two baffles 1 arranged at intervals; one end of the two baffles 1 is opened to form a detection port 2, and the other end opposite to the two baffles 1 is opened to form a receiving port 3, wherein the plane where the detection port 2 is located is substantially parallel to the emission surface of the single laser chip 6 to be detected. Provide a detection device 4, the detection device 4 can detect power and light parameters, and the light parameters include at least one of wavelength, spot area and divergence angle; the detection device 4 is located on one side of the detection port 2. Among them, the device that can detect power is a power meter, the device that can detect wavelength and divergence angle is a spectrometer, and the device that can detect spot area is a spot analyzer or a charge coupled device (CCD).

[0048] Two spaced baffles 1 can form a light receiving channel, one end of the light receiving channel is opened as a receiving port 3, the receiving port 3 faces the single laser chip 6 to be detected, and the other end of the light receiving channel is opened as a detection port 2, the detection port 2 faces the detection device 4, and the light emitted by the single laser chip 6 to be detected can be detected by the detection device 4 after passing through the light receiving channel. The surfaces of the two baffles 1 facing each other are provided with reflective films to improve the reflectivity.

[0049] The detection device 4 is located at one side of the detection port 2, and acquires the light emitted by the single laser chip 6 to be detected through the light receiving channel, so as to detect the performance of the single laser chip 6 to be detected. The detection device 4 may include, but is not limited to, a power meter and a spectrometer. When it is necessary to detect specific performance, the detection end of the corresponding detection meter may be directed toward the detection port 2. In this embodiment, the power, wavelength, divergence angle and other index parameters of the single laser chip 6 to be detected may be detected.

[0050] Step S2. Direct the light emitting end of the single laser chip 6 to be detected on the stack 5 toward the receiving port 3 of the two parallel baffles 1 , wherein the spacing direction of the two baffles 1 is the same as the arrangement direction of the multiple laser chips on the stack 5 .

[0051] like Figure 1 As shown, the stacked array 5 has a plurality of laser chips spaced along its length. During testing, the stacked array 5 can be tested one by one. In this embodiment, the stacked array 5 can be fixed on a fixture 7. During the test, the stacked array 5 remains in position, and the positions of the two baffles 1 are changed to make the detection port 2 face each laser chip one by one from left to right. The alignment can be performed by center alignment, that is, the center line of the single laser chip 6 to be tested is aligned with the center line of the receiving ports 3 of the two baffles 1 in a parallel state.

[0052] Step S3. Starting from the distance L between the receiving port 3 and the single laser chip 6 to be detected, gradually reduce the distance between the receiving port 3 and the single laser chip 6 to be detected, and simultaneously detect the power of the single laser chip 6 to be detected until the power of the single laser chip 6 to be detected remains unchanged, then stop changing the distance between the receiving port 3 and the single laser chip 6 to be detected.

[0053] like Figure 2 As shown, in this embodiment, the fixed stacked array 5 is located below the detection port 2. Before each detection of a single laser chip 6 to be detected, the distance between the receiving port 3 and the single laser chip 6 to be detected can be adjusted to L in advance. L is the maximum empirical value, and the values ​​of stacked arrays 5 of different batches may be different. Before detecting a large number of stacked arrays, multiple sets of distance data can be detected in a conventional manner, that is, the distance between the receiving port 3 and the single laser chip 6 to be detected when the power is unchanged, and then the maximum value of these values ​​is taken as L. The subsequent detection starts from the distance L and gradually reduces the distance between the receiving port 3 and the single laser chip 6 to be detected. During the process of reducing the distance, the power meter faces the detection port 2 and detects the power change at the same time. When the power is unchanged, the distance between the receiving port 3 and the single laser chip 6 to be detected stops changing. When the detected power is unchanged, it means that the current detection port 2 only receives the light emitted by the single laser chip 6 to be detected, and the light emitted by the single laser chip adjacent to the single laser chip 6 to be detected will be blocked by the baffle 1 to improve the detection accuracy.

[0054] Step S4. Keep the opening of the receiving port 3 unchanged, rotate the two baffles 1 to expand the opening of the detection port 2, and simultaneously detect the optical parameters of the single laser chip 6 to be detected. When the detected optical parameters remain unchanged, stop rotating the baffles 1.

[0055] like Figure 3As shown, a rotating shaft 14 is provided at the edge of the baffle 1 near the clamp 7, and the baffle 1 can rotate around the rotating shaft 14 driven by the rotating drive mechanism, or rotate manually. Taking the detection of the divergence angle as an example, initially, the two baffles 1 are parallel, so that the two baffles 1 rotate around their respective rotating shafts 14, and the opening of the receiving port 3 is kept unchanged to expand the opening of the detection port 2. When the divergence angle is detected, the spectrometer faces the detection port 2. In the process of the gradual rotation of the two baffles 1, the divergence angle value detected gradually increases. When the divergence angle detected remains unchanged, the rotation of the baffle 1 is stopped. At this time, the angle formed by the two baffles 1 is closest to the divergence angle of the single laser chip 6 to be detected, that is, the current expansion angle of the two baffles 1 is the minimum angle that can detect the divergence angle of the single laser chip 6 to be detected. At this time, the detection port 2 is opened to the minimum, which can reduce the external interference light from the detection port 2 to enter between the two baffles 1 as much as possible, thereby affecting the performance test of the single laser chip 6 to be detected. The method of detecting the wavelength and the spot area is the same as the above-mentioned detection of the divergence angle.

[0056] In step S2, one of the baffle assembly and the stack 5 is fixed, and the other is moved so that the center line of the light-emitting end of the single laser chip 6 to be detected on the stack 5 is aligned with the center line of the receiving ports 3 of the two baffles 1 in parallel.

[0057] In an practicable solution, in step S2, the relative positions of the two baffles 1 and the single laser chip 6 to be detected can be adjusted by fixing the baffle assembly and moving the stack 5. In this way, the lateral positions of the baffle assembly and the detection device 4 can be kept unchanged. If the position of the baffle assembly is adjusted, the position of the detection device 4 above it will also change with the position of the baffle assembly.

[0058] Step S2 includes the steps of: providing an image acquisition mechanism, the image acquisition mechanism is used to acquire image information of a single laser chip on the stack 5, and obtain position information of a single laser chip 6 to be detected based on the image information; according to the position information of the single laser chip 6 to be detected and the position information of the baffle assembly, adjusting the center line of the light emitting end of the single laser chip 6 to be detected on the stack 5 to be aligned with the center line of the receiving ports 3 of the two baffles 1 in a parallel state.

[0059] The positional relationship between the single laser chip 6 to be detected and the two baffles 1 can be determined by image acquisition, so as to determine that the center line of the light-emitting end of the single laser chip 6 to be detected is aligned with the center line of the receiving ports 3 of the two baffles 1 in a parallel state. The initial position of the baffle assembly is a preset position, and its position change at each step can also be obtained. Therefore, the position of the baffle assembly can be considered as a known quantity. The position of each single laser chip on the stacked array 5 is an unknown quantity, and an image acquisition mechanism is required to perform image recognition, and the acquired position information of the single laser chip 6 to be detected and the position information of the single laser chip 6 to be detected are unified into the coordinate system where the baffle assembly is located. Finally, according to the coordinates of the single laser chip 6 to be detected and the coordinates of the baffle assembly, the center line of the light-emitting end of the single laser chip 6 to be detected on the stacked array 5 is adjusted to align with the center line of the receiving ports 3 of the two baffles 1 in a parallel state.

[0060] Step S2 includes the following steps performed before the step of aligning the single laser chip 6 to be detected on the stack array 5 with the receiving port 3 of the two baffles 1 in a parallel state: obtaining the width a of the single laser chip on the stack array 5 and the spacing b between two adjacent single laser chips; adjusting the distance d between the two parallel baffles 1, a≤d≤a+b.

[0061] In different batches of stacked arrays 5, the distance between two adjacent laser chips may be different. Therefore, before detection, the distance between the two parallel baffles 1 needs to be adjusted to match the current stacked array 5. The information of the stacked array 5, that is, the width a of a single laser chip on the stacked array 5 and the spacing b between two adjacent single laser chips, can be obtained before detection, for example, by image acquisition, wherein the value of the width a is equal to the length of the single laser chip 6 to be detected in the arrangement direction of the multiple laser chips on the stacked array 5, and the value of the spacing b is equal to the distance between the two adjacent laser chips in the arrangement direction of the multiple laser chips on the stacked array 5. The distance d between the two parallel baffles 1 is adjusted, a≤d≤a+b, so that only a single laser chip is aligned under the two baffles 1, and the distance d is equal to the distance between the two baffles 1 in the arrangement direction of the multiple laser chips on the stacked array 5.

[0062] like Figure 1 and Figure 4 As shown, the laser chip testing device provided by the present invention is used to implement the above-mentioned laser chip testing method; the laser chip testing device includes a fixture 7, a baffle assembly and a detection device 4.

[0063] The fixture 7 is used to fix the stack array 5. The position of the fixture 7 is fixed, so during the detection process, the position of the stack array 5 remains unchanged. The fixture 7 is located below the baffle assembly.

[0064] The baffle assembly includes two baffles 1 arranged at intervals; one end of the two baffles 1 is opened to form a detection port 2, and the other end opposite to the two baffles 1 is opened to form a receiving port 3; the baffle assembly is located between the fixture 7 and the detection device 4; the baffle 1 is close to the edge of the fixture 7, that is, the edge forming the receiving port 3, and is connected to a rotating shaft 14. One end of the rotating shaft 14 can be connected to a rotation driving mechanism, and the rotation driving mechanism is used to drive the baffle 1 to rotate around the rotating shaft 14.

[0065] Two baffles 1 arranged at intervals can form a light receiving channel, one end of which is opened as a receiving port 3, which faces the single laser chip 6 to be detected, and the other end of which is opened as a detection port 2, which faces the detection device 4. The light emitted by the single laser chip 6 to be detected passes through the light receiving channel and is detected by the detection device 4. Among them, reflective films are provided on the surfaces of the two baffles 1 facing each other to improve the reflectivity. A rotating shaft 14 is connected to the edge of the baffle 1 close to the clamp 7, and the baffle 1 can rotate around the rotating shaft 14 driven by a rotating drive mechanism. Initially, the two baffles 1 are parallel. When the divergence angle needs to be detected, the two baffles 1 are rotated around their respective rotating shafts 14 to keep the opening of the receiving port 3 unchanged so as to expand the opening of the detection port 2. Among them, the rotating drive mechanism can include a motor, and the output shaft of the motor is connected to the rotating shaft 14.

[0066] The detection device 4 can detect power and light parameters, and the light parameters include at least one of wavelength, spot area and divergence angle. The detection device 4 is located on one side of the detection port 2, and obtains the light emitted by the single laser chip 6 to be detected through the light receiving channel, so as to detect the performance of the single laser chip 6 to be detected. The detection device 4 can include but is not limited to a power meter, a spectrometer, and a spot analyzer (or a charge coupled device). The spectrometer can detect the wavelength and divergence angle, and the spot analyzer or the charge coupled device (CCD) can detect the spot area. When it is necessary to detect specific performance, the corresponding detector can be aligned with the detection port 2. In this embodiment, the power, wavelength, divergence angle and other index parameters of the single laser chip 6 to be detected can be detected.

[0067] In the arrangement direction of the multiple laser chips on the stack 5, the fixture 7 and the baffle assembly can generate relative movement so that the light emitting end of the single laser chip 6 to be detected on the stack 5 faces the receiving ports 3 of the two baffles 1 in a parallel state.

[0068] The device may include a first moving mechanism 8, which is connected to the moving fixture 7 or the baffle assembly and is used to move the moving fixture 7 or the baffle assembly so that the light-emitting end of the single laser chip 6 to be detected on the stacked array 5 faces the receiving port 3 of the two baffles 1 in a parallel state. In this embodiment, the stacked array 5 can be fixed on the fixture 7. During the test, the position of the stacked array 5 remains unchanged, and the positions of the two baffles 1 are changed to align the detection ports 2 with the single laser chips one by one from left to right.

[0069] The laser chip testing device may include an image detection mechanism, which is used to collect image information of a single laser chip on the stack 5, and obtain position information of a single laser chip 6 to be detected based on the image information, and adjust the center line of the light-emitting end of the single laser chip 6 to be detected on the stack 5 to align with the center line of the receiving ports 3 of the two baffles 1 in a parallel state based on the position information of the single laser chip 6 to be detected and the position information of the baffle assembly.

[0070] The positional relationship between the single laser chip 6 to be detected and the two baffles 1 can be determined by image acquisition, so as to determine that the center line of the light-emitting end of the single laser chip 6 to be detected is aligned with the center line of the receiving ports 3 of the two baffles 1 in a parallel state. The initial position of the baffle assembly is a preset position, and its position change at each step can also be obtained. Therefore, the position of the baffle assembly can be considered as a known quantity. The position of each laser chip on the stacked array 5 is an unknown quantity, and an image acquisition mechanism is required to perform image recognition, and the acquired position information of the single laser chip 6 to be detected and the position information of the single laser chip 6 to be detected are unified into the coordinate system where the baffle assembly is located. Finally, according to the coordinates of the single laser chip 6 to be detected and the coordinates of the baffle assembly, the center line of the light-emitting end of the single laser chip 6 to be detected on the stacked array 5 is adjusted to align with the center line of the receiving ports 3 of the two baffles 1 in a parallel state.

[0071] In the light emitting direction of the single laser chip 6 to be detected, the fixture 7 and the baffle assembly can generate relative movement to adjust the distance between the receiving port 3 and the single laser chip 6 to be detected.

[0072] The device may further include a second moving mechanism 9, which is connected to the fixture 7 or the baffle assembly and is used to move the fixture 7 or the baffle assembly, so as to adjust the distance between the receiving port 3 and the single laser chip 6 to be detected in the light emitting direction of the single laser chip 6 to be detected. In this embodiment, the stack 5 is fixed, and the baffle assembly moves up and down to adjust the distance between the receiving port 3 and the single laser chip 6 to be detected.

[0073] In the test method, the distance between the receiving port 3 and the single laser chip 6 to be detected is gradually reduced, and the power of the single laser chip 6 to be detected is detected at the same time, until the power of the single laser chip 6 to be detected remains unchanged, indicating that the current detection port 2 only receives the light emitted by the single laser chip 6 to be detected, and the light emitted by the single laser chip adjacent to the single laser chip 6 to be detected will be blocked by the baffle 1 to improve the detection accuracy. At the same time, when detecting the divergence angle, the two parallel baffles 1 are gradually unfolded. When the divergence angle detected remains unchanged, the baffle 1 is stopped from rotating. At this time, the angle formed by the two baffles 1 is closest to the divergence angle of the single laser chip 6 to be detected. In other words, the unfolding angle of the current two baffles 1 is the minimum angle that can detect the divergence angle of the single laser chip 6 to be detected. At this time, the detection port 2 is opened to the minimum, which can reduce the external interference light from the detection port 2 to enter between the two baffles 1 as much as possible, thereby affecting the performance test of the single laser chip 6 to be detected.

[0074] The baffle assembly further includes a fixed plate 10, and the edge of the baffle 1 forming the receiving port 3 is connected with a rotating shaft 14, and the rotating shaft 14 is rotatably connected to the fixed plate 10;

[0075] The fixing plate 10 is further provided with an arc-shaped guide groove 11 , and the baffle plate 1 is provided with a guide protrusion, which is located in the arc-shaped guide groove 11 to guide the baffle plate 1 to rotate around the rotating shaft 14 .

[0076] The center of the circular arc guide groove 11 coincides with the axis of the rotating shaft 14, and the circular arc guide groove 11 limits the movement of the baffle 1, and can limit the maximum range of rotation of the baffle 1. The upper end of the circular arc guide groove 11 is aligned with the rotating shaft 14, so that the two baffles 1 can be quickly restored to a parallel state. At the same time, the rotation drive mechanism can be connected to the guide protrusion instead of the rotating shaft 14, and the inclination of the baffle 1 can be changed by pushing and pulling, so as to improve the accuracy.

[0077] The fixed plate 10 is provided with a slide groove 12 , in which a slider 13 is slidably connected, and a rotating shaft 14 is rotatably connected to the slider 13 , so that the distance between the two baffles 1 can be changed by sliding the slider 13 .

[0078] The number of the slide groove 12 and the slider 13 can be one or two, that is, in an practicable solution, one baffle 1 is directly connected to the fixed plate 10; another baffle 1 is directly connected to the slider 13, and then the slider 13 is slidably connected to the fixed plate 10 through the transversely extending slide groove 12. In different batches of stacked arrays 5, the distance between two adjacent single laser chips may be different. Therefore, before detection, it is necessary to adjust the distance between the two parallel baffles 1 by sliding the slider 13 to match the current stacked array 5. Further, when the baffle 1 is connected to the slider 13, the arc-shaped guide groove 11 is also set on the slider 13.

[0079] The laser chip testing device also includes a first moving mechanism 8, which drives the baffle assembly to move along the light emitting direction of the single laser chip 6 to be tested; the laser chip testing device also includes a second moving mechanism 9, which drives the first moving mechanism 8 and the baffle assembly to move together along the arrangement direction of the multiple laser chips on the stack 5.

[0080] The first moving mechanism 8 and the second moving mechanism 9 can both be linear motion modules commonly used in the prior art, so that the baffle assembly can achieve position changes in two dimensions (vertical and horizontal).

[0081] The detection device 4 includes a power meter, a spectrometer and a switching mechanism. The power meter and the spectrometer are respectively connected to the switching mechanism. The switching mechanism is used to make the detection end of one of the power meter and the spectrometer face the detection port 2.

[0082] The switching mechanism (not shown) may include a turntable, to which the power meter, spectrometer, and spot analyzer (or charge coupled device) are all connected. By rotating the turntable, the detection end of one of the power meter, spectrometer, and spot analyzer is directed toward the detection port 2.

[0083] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A laser chip testing method, characterized in that: include: Step S1. providing a baffle assembly, the baffle assembly comprising two baffles (1) arranged at intervals; one end of the two baffles (1) is opened to form a detection port (2), and the other end opposite to the two baffles is opened to form a receiving port (3); A detection device (4) is provided, wherein the detection device (4) is capable of detecting power and light parameters, wherein the light parameters include at least one of wavelength, light spot area and divergence angle; the detection device (4) is located on one side of the detection port (2); Step S2. directing the light-emitting end of a single laser chip (6) to be detected on the stacked array (5) toward the receiving port (3) of two baffles (1) in a parallel state, wherein the spacing direction of the two baffles (1) is the same as the arrangement direction of the multiple laser chips on the stacked array (5); Step S3. Starting from the distance L between the receiving port (3) and the single laser chip (6) to be detected, gradually reducing the distance between the receiving port (3) and the single laser chip (6) to be detected, and detecting the power of the single laser chip (6) to be detected at the same time, until the power of the single laser chip (6) to be detected remains unchanged, and then stopping changing the distance between the receiving port (3) and the single laser chip (6) to be detected; Step S4. Keeping the opening of the receiving port (3) unchanged, the two baffles (1) are rotated to expand the opening of the detection port (2), and the optical parameters of the single laser chip (6) to be detected are detected at the same time. When the detected optical parameters remain unchanged, the rotation of the baffles (1) is stopped.

2. The laser chip testing method according to claim 1, characterized in that: In step S2, one of the baffle assembly and the stack (5) is fixed, and the other is moved, so that the center line of the light-emitting end of the single laser chip (6) to be detected on the stack (5) is aligned with the center line of the receiving ports (3) of the two baffles (1) in a parallel state.

3. The laser chip testing method according to claim 2, characterized in that: The step S2 comprises the steps of: An image acquisition mechanism is provided, the image acquisition mechanism being used to acquire image information of a single laser chip on a stacked array (5), and to obtain position information of a single laser chip (6) to be detected based on the image information; and to adjust the center line of a light-emitting end of the single laser chip (6) to be detected on the stacked array (5) to be aligned with the center line of receiving ports (3) of two baffles (1) in a parallel state based on the position information of the single laser chip (6) to be detected and the position information of the baffle assembly.

4. The laser chip testing method according to claim 2, characterized in that: The step S2 comprises the following steps performed before the step of aligning the center line of the light-emitting end of the single laser chip (6) to be detected on the stack (5) with the center line of the receiving ports (3) of the two baffles (1) in a parallel state: Obtaining the width a of a single laser chip on the stack (5) and the spacing b between two adjacent laser chips; The distance d between the two parallel baffles (1) is adjusted to a≤d≤a+b.

5. A laser chip testing device, characterized in that: Used to implement the laser chip testing method according to any one of claims 1 to 4; The laser chip testing device comprises a fixture (7), a baffle assembly and a detection device (4); The clamp (7) is used to fix the stacked array (5); The baffle assembly comprises two baffles (1) arranged at intervals; one end of the two baffles (1) is opened to form a detection port (2), and the other end opposite to the two baffles is opened to form a receiving port (3); the baffle assembly is located between the fixture (7) and the detection device (4); the included angle of the two baffles (1) is adjustable so that the opening of the detection port (2) can be changed while the opening of the receiving port (3) remains unchanged; The detection device (4) is capable of detecting power and light parameters, wherein the light parameters include at least one of wavelength, light spot area and divergence angle; In the arrangement direction of the plurality of laser chips on the stacked array (5), the fixture (7) and the baffle assembly are capable of relative movement, so that the light emitting end of a single laser chip (6) to be detected on the stacked array (5) faces the receiving ports (3) of the two baffles (1) in a parallel state; In the light emitting direction of the single laser chip (6) to be detected, the fixture (7) and the baffle assembly can generate relative movement to adjust the distance between the receiving port (3) and the single laser chip (6) to be detected.

6. The laser chip testing device according to claim 5, characterized in that: The surfaces of the two baffles (1) facing each other are covered with a reflective film.

7. The laser chip testing device according to claim 5, characterized in that: The baffle assembly further comprises a fixed plate (10); an edge of the baffle (1) forming the receiving opening (3) is connected to a rotating shaft (14); the rotating shaft (14) is rotatably connected to the fixed plate (10); The fixing plate (10) is also provided with an arc-shaped guide groove (11), and the baffle plate (1) is provided with a guide protrusion, wherein the guide protrusion is located in the arc-shaped guide groove (11) to guide the baffle plate (1) to rotate around the rotating shaft (14).

8. The laser chip testing device according to claim 7, characterized in that: The fixed plate (10) is provided with a sliding groove (12), a sliding block (13) is slidably connected in the sliding groove (12), the rotating shaft (14) is rotatably connected to the sliding block (13), and the distance between the two baffles (1) is changed by sliding the sliding block (13).

9. The laser chip testing device according to claim 5, characterized in that: The laser chip testing device further comprises a first moving mechanism (8), wherein the first moving mechanism (8) drives the baffle assembly to move along the light emitting direction of the single laser chip (6) to be tested; The laser chip testing device further comprises a second moving mechanism (9), wherein the second moving mechanism (9) drives the first moving mechanism (8) and the baffle assembly to move together along the arrangement direction of the plurality of laser chips on the stack (5).

10. The laser chip testing device according to claim 5, characterized in that: The detection device (4) comprises a power meter, an optical parameter detection device and a switching mechanism, wherein the power meter and the optical parameter detection device are respectively connected to the switching mechanism, and the switching mechanism is used to make the detection end of one of the power meter and the optical parameter detection device face the detection port (2); wherein the optical parameter detection device comprises at least one of a spectrometer, a light spot analyzer or a charge coupled device.

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