Mask parameter measurement method, device, equipment, system and program product

Abstract

The present application discloses a method, device, equipment, system and program product for measuring parameters of a mask, and relates to the field of semiconductor processing technology. The method includes: during the etching process of the mask, controlling each light generating module to emit a light signal; by detecting the time corresponding to when the light intensity of the light signal received by any light receiving module reaches a preset first threshold, obtaining the time it takes for the point corresponding to the light receiving module to reach the etching through state, and calculating the discrete degree of the etching amount when several points on the mask are etched through based on the time it takes for each point to reach the etching through state and the etching rate of the mask obtained in advance, and obtaining the uniformity of the key dimensions of the mask. The present application overcomes the limitation of parameter measurement of masks that can only be applied to specific design patterns.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing technology, and in particular to a mask parameter measurement method, device, equipment, system and program product. Background Art

[0002] A mask is an optical mold composed of a metal film with graphics, text and other information on the surface and a high-purity fused quartz or other transparent material substrate. It is widely used in microelectronics processing or semiconductor production exposure processes. Critical Dimension Uniformity (CDU) is an important parameter that reflects the performance of the mask. Critical Dimension Uniformity is used to indicate the degree of discreteness of the critical dimension accuracy value (Critical Dimension, CD) of the points on the mask. Among them, the critical dimension accuracy value refers to the dimension value of the line or seam at a specific position on the mask.

[0003] In routine process maintenance, it is necessary to regularly monitor the uniformity of the key dimensions of the developing equipment corresponding to the exposure equipment. The conventional monitoring method is: design a specific pattern with a specified line width, array the pattern on the mask at a certain step distance, go through the process steps of exposure, development, etching, stripping, cleaning, etc., and finally use the measuring equipment to measure the key dimension accuracy value of each point. Finally, the Sigma principle is used, that is, the three standard deviations of the key dimension accuracy of all points are calculated to obtain the corresponding key dimension uniformity.

[0004] However, the above scheme can only realize the critical dimension uniformity measurement of the mask plate with a mask pattern (i.e., a lithography pattern) of a specific design pattern, and cannot realize the critical dimension uniformity measurement of the mask plate with other mask patterns, and the applicable application scenarios are relatively single. Summary of the invention

[0005] The main purpose of the present application is to provide a method, device, equipment, system and program product for measuring parameters of a mask, aiming to solve the problem that the existing measurement solutions have relatively limited applicable scenarios.

[0006] To achieve the above-mentioned purpose, the present application provides a method for measuring parameters of a mask, the method being applied to a parameter measurement system of a mask, the system comprising a light generating device and a light receiving device, the light generating device and the light receiving device being arranged on opposite sides of the mask; the mask comprising a plurality of points; the light generating device comprising a plurality of light generating modules; the light receiving device comprising a plurality of light receiving modules, each of the points, each of the light receiving modules corresponding to each of the light generating modules one by one, the method comprising:

[0007] During the etching process of the mask, controlling each of the light generating modules to emit a light signal;

[0008] By detecting the time corresponding to when the light intensity of the optical signal received by any of the optical receiving modules reaches a preset first threshold, the time duration experienced when the point corresponding to the optical receiving module reaches the etching through state is obtained;

[0009] Based on the time taken for each of the points to reach the etched-through state and the etching rate of the mask acquired in advance, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask.

[0010] In one embodiment, during the etching process of the mask, the step of controlling each of the light generating modules to emit a light signal comprises:

[0011] When the etching phase of the mask begins, each of the light generating modules is controlled to emit light signals simultaneously until the etching phase ends.

[0012] In one embodiment, when the etching phase of the mask plate begins, the step of controlling each of the light generating modules to emit light signals simultaneously until the etching phase ends includes:

[0013] When the etching phase of the mask begins, each of the light generating modules is controlled to emit a light signal with a light intensity of a preset second threshold until the etching phase ends; wherein the preset second threshold is greater than or equal to the preset first threshold.

[0014] In one embodiment, the step of obtaining the time duration for a point corresponding to the light receiving module to reach the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any of the light receiving modules reaches a preset first threshold comprises:

[0015] When it is detected that the light intensity of the optical signal received by any of the optical receiving modules reaches a preset first threshold, the time elapsed from the start of the etching stage to the current moment is determined to obtain the time length experienced when the point corresponding to the optical receiving module reaches the etching through state.

[0016] In one embodiment, the method further comprises:

[0017] During the etching process of the mask, the mask, each of the light generating modules and each of the light receiving modules are controlled to rotate synchronously.

[0018] In one embodiment, the step of calculating the discreteness of the etching amount when a plurality of points on the mask are etched through based on the time taken for each point to reach the etching through state and the etching rate of the mask acquired in advance to obtain the uniformity of the critical dimension of the mask includes:

[0019] Based on the time taken for each of the points to reach the etching through state, calculating the standard deviation of the time taken for a number of points on the mask to reach the etching through state;

[0020] The discrete degree of the etching amount when a plurality of points on the mask are etched through is calculated based on the standard deviation of the elapsed time and the etching rate, so as to obtain the critical dimension uniformity of the mask.

[0021] In addition, to achieve the above-mentioned purpose, the present application also provides a mask parameter measurement device, the mask parameter measurement device is applied to the mask parameter measurement system, the mask parameter measurement system includes a light generating device and a light receiving device, the light generating device and the light receiving device are arranged on opposite sides of the mask; the mask includes a plurality of points; the light generating device includes a plurality of light generating modules; the light receiving device includes a plurality of light receiving modules, each of the points, each of the light receiving modules corresponds to each of the light generating modules, and the device includes:

[0022] A control module, used for controlling each of the light generating modules to emit light signals during the etching process of the mask;

[0023] A first determination module is used to obtain the time length when the point corresponding to the light receiving module reaches the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any of the light receiving modules reaches a preset first threshold;

[0024] The second determination module is used to calculate the discrete degree of the etching amount when several points on the mask are etched through based on the time it takes for each point to reach the etching through state and the etching rate of the mask obtained in advance, so as to obtain the critical dimension uniformity of the mask.

[0025] In addition, to achieve the above-mentioned purpose, the present application also provides a mask parameter measurement device, the mask parameter measurement device comprising: a memory, a processor, and a computer program stored on the memory and executable on the processor, the computer program being configured to implement the steps of the mask parameter measurement method as described above.

[0026] In addition, to achieve the above-mentioned purpose, the present application also provides a mask parameter measurement system, the mask parameter measurement system includes a light generating device, a light receiving device and the mask parameter measurement equipment as described above, the mask parameter measurement equipment is respectively communicatively connected with the light generating device and the light receiving device; the light generating device and the light receiving device are arranged on opposite sides of the mask; the mask includes a plurality of points; the light generating device includes a plurality of light generating modules; the light receiving device includes a plurality of light receiving modules, and each of the points, each of the light receiving modules and each of the light generating modules correspond one-to-one.

[0027] In addition, to achieve the above-mentioned purpose, the present application also provides a computer program product, including a computer program, which implements the steps of the above-mentioned mask parameter measurement method when executed by a processor.

[0028] The parameter measurement method, device, equipment, system and program product of the mask provided by the present application control each light generating module to emit a light signal during the etching process of the mask; and obtain the time taken for the point corresponding to the light receiving module to reach the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any light receiving module reaches a preset first threshold. Since the mask is not light-transmissive, and during the etching process of the mask, the chromium layer and the chromium oxide layer of the mask will undergo a chemical reaction and be gradually eliminated. Therefore, when the light intensity received by the light receiving module reaches the first preset threshold, it indicates that the chromium layer at the corresponding point on the mask begins to be etched through. Therefore, the time taken for the chromium layer at the corresponding point to be etched through can be determined by the time corresponding to when the light intensity of the light signal received by different light receiving modules reaches the preset first threshold. Then, based on the time taken for each point to reach the etching through state and the etching rate of the mask obtained in advance, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask. The present application characterizes the uniformity of the key dimensions of the mask by replacing the discrete degree of the key dimension accuracy value of the point with the discrete degree of the etching amount when the point is etched through, thereby overcoming the limitation of the parameter measurement of the mask that can only be applied to specific design patterns, and can meet the application scenario requirements of various design patterns, and is highly practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0031] Figure 1 A structural schematic diagram of an embodiment of a mask parameter measurement system according to the present application;

[0032] Figure 2 A top view of the light generating device designed for this application;

[0033] Figure 3 A schematic diagram of a process flow provided for a first embodiment of a method for measuring parameters of a mask of the present application;

[0034] Figure 4 A schematic diagram of a flow chart provided for a second embodiment of a method for measuring parameters of a mask of the present application;

[0035] Figure 5 Schematic diagram of the structure of the mask parameter measurement system in the embodiment of the present application.

[0036] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0037] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0038] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0039] The main solution of the present application is: during the etching process of the mask, each light generating module is controlled to emit a light signal; by detecting the time corresponding to the time when the light intensity of the light signal received by any light receiving module reaches a preset first threshold, the time taken for the point corresponding to the light receiving module to reach the etching through state is obtained, and based on the time taken for each point to reach the etching through state and the etching rate of the mask obtained in advance, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask.

[0040] At present, the method for measuring the critical dimension uniformity of the mask is as follows: design a pattern of a specified line width, array the pattern on the mask at a certain step distance, and then process the mask through processes such as exposure, development, etching, stripping, cleaning, and measurement. Finally, use the measuring equipment to measure the critical dimension accuracy of each point, and then integrate and calculate the critical dimension accuracy of all points to find the 3σ (three sigma law) value of each point, and then get the critical dimension uniformity (CDU) of the corresponding mask. However, this method can only realize the critical dimension uniformity measurement of the mask with a specific design pattern, and cannot realize the critical dimension uniformity measurement of the mask with other mask patterns. In actual applications, the images of the masks required by users are ever-changing, and the above solution cannot meet the needs of various application scenarios.

[0041] In addition, the above monitoring scheme has the following limitations:

[0042] a. Waste of equipment time and raw materials: Each time the uniformity of a critical dimension is monitored, a set mask pattern needs to be exposed, which wastes the time of the photolithography equipment, development equipment, etching equipment and measurement equipment, and uses a variety of reagents;

[0043] b. Not real-time: The operating status of the equipment is changing at any time. The above scheme cannot guarantee the qualification of the measured uniformity of the key dimensions, and cannot detect sudden changes in the uniformity of the key dimensions in time.

[0044] To this end, the present application provides a solution, which determines the discrete degree of etching amount corresponding to when several points on the mask are etched through by the time and etching rate experienced when different points on the mask are etched through, thereby realizing the measurement of the uniformity of the key dimensions of the mask. Since the critical dimension accuracy value of the mask is basically finalized when the etching is completed, and the etching amount can characterize the thickness or volume of the part of the material removed during the etching process, the critical dimension uniformity of the mask can be characterized by the discrete degree of etching amount corresponding to when the point is etched through instead of the discrete degree of the critical dimension accuracy value of the point, which overcomes the limitation of parameter measurement of the mask that can only be applied to specific design graphics, can meet the application scenario requirements of a variety of design graphics, and is highly practical.

[0045] For details, please refer to Figure 1 , Figure 1 1 is a schematic diagram of a structure of a mask parameter measurement system according to an embodiment of the present application. The mask parameter measurement system includes a light generating device 1 and a light receiving device 2, wherein the light generating device 1 and the light receiving device 2 are arranged on opposite sides of a mask 3; the mask 3 includes a plurality of points 31 ( Figure 1 Only 4 are shown in the figure), the light generating device 1 includes a plurality of light generating modules 11 ( Figure 1Only 4 are shown); the optical receiving device 2 includes a plurality of optical receiving modules 21 ( Figure 1 Only four are shown), each point 31, each light receiving module 21 and each light generating module 11 correspond one to one.

[0046] Specifically, the one-to-one correspondence between each point 31, each light receiving module 21 and each light generating module 11 means that each point 31 and each light receiving module 21 are respectively located within the light emission range of the light generating module 11 corresponding to each light receiving module 21. For example, assuming that there are a first point, a second point, a first light generating module, a second light generating module, a first light receiving module and a second light receiving module, and assuming that the first point and the first light generating module correspond to the first light receiving module, and the second point and the second light generating module correspond to the second light receiving module, then the first point and the first light receiving module can receive the light emitted by the first light generating module, and the second point and the second light receiving module can receive the light emitted by the second light generating module.

[0047] As an example, the light generating device 1 can be placed below the placement of the mask plate 3, and the light receiving device 2 can be placed above the placement of the mask plate 3. The top view of the light receiving device 2 is as shown in FIG. Figure 2 shown.

[0048] Combined with the above Figure 1 The system provided is used to illustrate the embodiments of the present application. Specifically, the execution subject of this embodiment can be a parameter measurement system of a mask plate, or a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or a parameter measurement device of a mask plate that can realize the above functions, etc., and this embodiment does not specifically limit this. The following takes the parameter measurement device of the mask plate as the execution subject as an example to illustrate this embodiment and the following embodiments.

[0049] Please refer to Figure 3 , Figure 3 The first embodiment of the method for measuring the parameters of the mask provided in this application is a flow chart. The method for measuring the parameters of the mask in this embodiment is applied to the mask parameter measurement system, combined with Figure 1 As shown, the system includes a light generating device 1 and a light receiving device 2, and the light generating device 1 and the light receiving device 2 are arranged on opposite sides of a mask 3; the mask 3 includes a plurality of points 31, the light generating device 1 includes a plurality of light generating modules 11; the light receiving device 2 includes a plurality of light receiving modules 21, and each point 31, each light receiving module 21 corresponds to each light generating module 11. The parameter measurement method of the mask includes steps S10 to S30:

[0050] Step S10, during the etching process of the mask, controlling each light generating module to emit a light signal.

[0051] It should be noted that the mask is an image template used in the photolithography process commonly used in microelectronic processing technology, and is a carrier of information such as image design and process technology. Through mask lithography, the design pattern on the mask can be copied to the downstream process material. The mask lithography process generally includes process steps such as exposure, development, etching, stripping, and cleaning. In the conventional production process, the mask is exposed, developed, and etched, and the corresponding key dimension uniformity value has been finalized. Etching is the last process that affects the key dimension accuracy (i.e. CD, hereinafter referred to as CD value) in the mask production process. Therefore, the purpose of real-time monitoring of the key dimension uniformity of the mask can be achieved by monitoring the state of the mask during the etching process. Specifically, because the chromium layer usually does not have good light transmittance. When there is a chromium layer on the mask, the light emitted by the light generating module cannot pass through the mask to the light receiving module at the corresponding position, so that the mask can be exposed during the etching process of the mask. During the exposure process, the chromium layer of the mask will react chemically with the chromium oxide layer and be gradually eliminated. Therefore, when the light intensity received by the light receiving module at the corresponding position reaches the first preset threshold, it means that the chromium layer at the point corresponding to the light receiving module begins to be etched through. Therefore, the time corresponding to the time when the light intensity received by the light receiving module reaches the first preset threshold can be used to determine the time it takes for the chromium layer at the corresponding point to reach the etched through state, and the discrete degree of the etching amount of several points on the mask can be obtained in combination with the etching rate, thereby obtaining the uniformity of the key dimensions of the mask. Among them, the point refers to the geometric feature corresponding to a certain position in the mask.

[0052] In addition, it should be noted that when the chromium layer at a certain point on the mask is etched through, it means that the design image on the mask can be transferred to the underlying silicon wafer or other substrate, and the etching amount indicates the thickness or volume of part of the material removed by the mask during the etching process. The critical dimension accuracy value refers to the dimension value of the line or seam at a specific position on the mask, and the critical dimension accuracy value of the point is basically finalized when the etching stage is completed. Therefore, the thickness or volume of part of the material removed by the point on the mask during the etching process can be used to characterize the dimension value etched at the corresponding point, thereby realizing the measurement of the uniformity of the critical dimension of the mask.

[0053] Specifically, in some embodiments, the light generating module may be a laser or other device that can emit a light beam, for example, an ultraviolet light device that emits ultraviolet light. The laser may be a continuous laser or a pulsed laser.

[0054] As an implementation manner, the above step S10 may include: when the etching phase of the mask begins, controlling each light generating module to emit light signals simultaneously until the etching phase ends.

[0055] Specifically, when the etching phase of the mask begins, each light generating module can be controlled to emit a light signal with a light intensity of a preset second threshold until the etching phase ends.

[0056] More specifically, at the beginning of the etching phase of the mask, each light generating module can be turned on at the same time, and each light generating module can be set to be in an activated state until the end of the etching phase, so that each light generating module can continuously emit light signals during the etching phase of the mask. Alternatively, at the beginning of the etching phase of the mask, each light generating module can be activated at the same time, and each light generating module can be controlled to emit light signals at preset time intervals until the end of the etching phase.

[0057] Step S20, by detecting the time corresponding to when the light intensity of the optical signal received by any optical receiving module reaches a preset first threshold, the time duration experienced when the point corresponding to the optical receiving module reaches the etching through state is obtained.

[0058] Specifically, when the mask etching begins, there is still a chromium layer on the mask, and the light emitted by the light generating module cannot pass through the mask to illuminate the corresponding light receiving module, and the corresponding light receiving module cannot receive the light signal or the intensity of the received light signal fails to reach the preset first threshold. During the mask etching process, the mask continues to be etched and exposed, and the exposed chromium layer and chromium oxide layer on the mask undergo a chemical reaction and are gradually eliminated. At this time, the light emitted by the light generating module can pass through the mask and be fed back to the corresponding light receiving module, and the light intensity received by the corresponding light receiving module gradually increases until it reaches the first preset threshold.

[0059] It should be noted that due to the ever-changing patterns on the mask, when there is an unexposed pattern on the mask between the light generating module and the light receiving device, the light receiving module will not receive a light signal with a light intensity of the preset first threshold value. The signal of the receiving module corresponding to the mask of this process is an invalid signal. Therefore, the number of time periods experienced by the points obtained by the mask to reach the etching through state is less than or equal to the number of light generating modules that emit light signals.

[0060] Specifically, the above step S20 may include: when it is detected that the light intensity of the optical signal received by any optical receiving module reaches a preset first threshold, determining the time elapsed from the start of the etching stage to the current moment, and obtaining the time duration experienced when the point corresponding to the optical receiving module reaches the etching through state. The preset first threshold is less than or equal to the preset second threshold.

[0061] In this embodiment, the parameter measurement device of the mask can start the timer at the beginning of the etching stage, and record the timing time of the current timer when it is detected that the light intensity of the light signal received by any light receiving module reaches a preset first threshold value. The current timing time can represent the length of time that the chromium layer at the corresponding point experiences from the beginning of the etching stage to the time when it is etched through.

[0062] Step S30, based on the time taken for each point to reach the etch-through state and the pre-acquired etching rate of the mask, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask.

[0063] Specifically, the etching rate of the mask is affected by the reagent temperature, pressure, nozzle angle, etc. When determining the etching rate of the mask required for the current measurement process, the etching rate reference values ​​​​measured in multiple mask lithography processes under the same environment (that is, the same temperature, pressure and other parameters) can be used, and the average of all etching rate reference values ​​​​can be calculated as the current required mask etching rate.

[0064] Specifically, the above step S30 may include: based on the time taken for each point to reach the etching through state, calculating the standard deviation σ of the time taken for several points on the mask to reach the etching through state, and then calculating the discrete degree of the etching amount when different points on the mask are etched through based on the standard deviation σ of the time taken and the etching rate V, to obtain the critical dimension uniformity CDU of the mask. More specifically, the critical dimension uniformity of the mask can be obtained by the formula: CDU = 3V*σ.

[0065] Alternatively, the etching amount of each point when etched through can be calculated based on the time and etching rate it takes for each point to reach the etched through state, and then the degree of dispersion of the etching amount when different points are etched through can be calculated using the standard deviation formula to obtain the uniformity of the key dimension.

[0066] Through the above scheme, this embodiment controls each light generating module to emit a light signal during the etching process of the mask; by detecting the time corresponding to the light intensity of the light signal received by any light receiving module reaching the preset first threshold, the time taken for the point corresponding to the light receiving module to reach the etching through state is obtained. Since the mask is not light-transmissive, and during the etching process of the mask, the chromium layer and the chromium oxide layer of the mask will undergo a chemical reaction and be gradually eliminated. Therefore, when the light intensity received by the light receiving module reaches the first preset threshold, it indicates that the chromium layer at the corresponding point on the mask begins to be etched through. Therefore, the time taken for the chromium layer at the corresponding point to be etched through can be determined by the time corresponding to the light intensity of the light signal received by different light receiving modules reaching the preset first threshold. Then, based on the time taken for each point to reach the etching through state and the etching rate of the mask obtained in advance, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask. The present application characterizes the uniformity of the key dimensions of the mask by replacing the discrete degree of the key dimension accuracy value of the point with the discrete degree of the etching amount when the point is etched through, thereby overcoming the limitation of the parameter measurement of the mask that can only be applied to specific design patterns, and can meet the application scenario requirements of various design patterns, and is highly practical.

[0067] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as those in the above-mentioned embodiment 1 can be referred to the above introduction, and will not be repeated in the following. Figure 4 , Figure 4 1 is a flow chart of the second embodiment of the method for measuring the parameters of the mask of the present application. In this embodiment, the method for measuring the parameters of the mask further includes step S01:

[0068] Step S01 , during the etching process of the mask, controlling the mask, each light generating module and each light receiving module to rotate synchronously.

[0069] It should be noted that during the etching process, the mask is in a rotating state. In order for the light receiving module to receive the signal from the fixed light source, the mask, each light receiving module, and each light generating module need to rotate synchronously.

[0070] Specifically, during the etching process of the mask, controlling the mask, each light generating module and each light receiving module to rotate synchronously may include the following implementations:

[0071] As a first implementation, a sensor such as an encoder or a position sensor can be configured in the device controlling the rotation of the mask, and the sensor can be controlled to feed back the status information to the parameter measurement device of the mask. After receiving the corresponding status information, the parameter measurement device of the mask performs calculations and adjustments according to the status information to keep the mask, each light generating module and each light receiving module rotating synchronously.

[0072] As a second implementation manner, a parameter measuring device for a mask may send a synchronous rotation command to the mask, each light generating module, and each light receiving module.

[0073] Through the scheme of this embodiment, when the light generating module emits a light signal, the mask can always be illuminated and the corresponding light receiving module is always within the light emission range. Therefore, the time it takes for the chromium layer at different points on the mask to begin to be etched through can be accurately measured, which improves the accuracy of the measurement and thus ensures the eligibility of the key dimensional uniformity parameters of the mask.

[0074] The embodiment of the present application provides a mask parameter measurement device, which is applied to a mask parameter measurement system. The mask parameter measurement system includes a light generating device and a light receiving device, which are arranged on opposite sides of the mask; the mask includes a plurality of points; the light generating device includes a plurality of light generating modules; the light receiving device includes a plurality of light receiving modules, and each point and each light receiving module corresponds to each light generating module one by one. The mask parameter measurement device includes:

[0075] A control module, used to control each light generating module to emit light signals during the etching process of the mask;

[0076] A first determination module is used to obtain the time length when the point corresponding to the light receiving module reaches the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any light receiving module reaches a preset first threshold;

[0077] The second determination module is used to calculate the discrete degree of etching amount when several points on the mask are etched through based on the time it takes for each point to reach the etching through state and the etching rate of the mask obtained in advance, so as to obtain the critical dimension uniformity of the mask.

[0078] Optionally, the control module is further used for:

[0079] When the etching phase of the mask begins, each light generating module is controlled to emit light signals simultaneously until the etching phase ends.

[0080] Optionally, the control module is further used for:

[0081] When the etching phase of the mask begins, each light generating module is controlled to emit a light signal with a light intensity of a preset second threshold until the etching phase ends; wherein the preset second threshold is greater than or equal to the preset first threshold.

[0082] Optionally, the first determining module is further used to:

[0083] When it is detected that the light intensity of the optical signal received by any optical receiving module reaches the preset first threshold, the time elapsed from the start of the etching stage to the current moment is determined to obtain the time length experienced when the point corresponding to the optical receiving module reaches the etching through state.

[0084] Optionally, the mask parameter measuring device is further used for:

[0085] During the etching process of the mask, the mask, each light generating module and each light receiving module are controlled to rotate synchronously.

[0086] Optionally, the second determining module is further used to:

[0087] Based on the time taken for each point to reach the etching through state, calculate the standard deviation of the time taken for several points on the mask to reach the etching through state;

[0088] The discrete degree of the etching amount when several points on the mask are etched through is calculated based on the standard deviation of the elapsed time and the etching rate, and the critical dimension uniformity of the mask is obtained.

[0089] The mask parameter measurement device provided in this application can solve the technical problem of a relatively single application scenario. Compared with the prior art, the beneficial effects of the mask parameter measurement device provided in the embodiment of this application are the same as the beneficial effects of the mask parameter measurement method provided in the above embodiment, which will not be repeated here.

[0090] An embodiment of the present application provides a mask parameter measurement device, which includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask parameter measurement method in the above embodiment.

[0091] Reference below Figure 5 , which shows a schematic diagram of the structure of a parameter measurement device suitable for implementing the mask of the embodiment of the present application. The parameter measurement device of the mask in the embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle-mounted terminals (such as vehicle-mounted navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Figure 5 The parameter measurement device for the mask shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0092] like Figure 5 As shown, the parameter measurement device of the mask may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM: Read Only Memory) 1002 or a program loaded from a storage device 1003 to a random access memory (RAM: Random Access Memory) 1004. In RAM1004, various programs and data required for the operation of the parameter measurement device of the mask are also stored. The processing device 1001, ROM1002 and RAM1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Typically, the following systems may be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touchpad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 may allow the mask parameter measurement device to communicate wirelessly or wired with other devices to exchange data. Although the figure shows a mask parameter measurement device with various systems, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems may be implemented or have instead.

[0093] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0094] The mask parameter measurement device provided by the present application adopts the mask parameter measurement method in the above embodiment, which can solve the technical problem of a relatively single applicable scenario. Compared with the prior art, the beneficial effects of the mask parameter measurement device provided by the present application are the same as the beneficial effects of the mask parameter measurement device method provided by the above embodiment, and the other technical features in the mask parameter measurement device are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0095] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0096] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0097] An embodiment of the present application provides a mask parameter measurement system, the mask parameter measurement system includes a light generating device, a light receiving device and the mask parameter measurement device provided in the above embodiment, the mask parameter measurement device is respectively communicatively connected with the light generating device and the light receiving device; the light generating device and the light receiving device are arranged on opposite sides of the mask; the light generating device includes a plurality of light generating modules; the light receiving device includes a plurality of light receiving modules, and each light receiving module corresponds to each light generating module one by one.

[0098] The mask parameter measurement system provided by the present application can solve the technical problem of a relatively single application scenario. Compared with the prior art, the beneficial effects of the mask parameter measurement system provided by the embodiment of the present application are the same as the beneficial effects of the mask parameter measurement method provided by the above embodiment, which will not be repeated here.

[0099] An embodiment of the present application provides a computer program product, including a computer program, which implements the steps of the above-mentioned mask parameter measurement method when executed by a processor.

[0100] The computer program product provided in this application can solve the technical problems of the mask parameter measurement system. Compared with the prior art, the beneficial effects of the computer program product provided in the embodiment of this application are the same as the beneficial effects of the mask parameter measurement method provided in the above embodiment, which will not be repeated here.

[0101] The above are only preferred embodiments of the present application, and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent processing scope of the present application.

Claims

1. A method for measuring parameters of a mask, characterized in that: The method is applied to a mask parameter measurement system, the mask parameter measurement system comprises a light generating device and a light receiving device, the light generating device and the light receiving device are arranged on opposite sides of the mask; the mask comprises a plurality of points; the light generating device comprises a plurality of light generating modules; The light receiving device includes a plurality of light receiving modules, each of the points, each of the light receiving modules corresponds to each of the light generating modules, and the method includes: During the etching process of the mask, controlling each of the light generating modules to emit a light signal; By detecting the time corresponding to when the light intensity of the optical signal received by any of the optical receiving modules reaches a preset first threshold, the time duration experienced when the point corresponding to the optical receiving module reaches the etching through state is obtained; Based on the time taken for each of the points to reach the etched-through state and the etching rate of the mask acquired in advance, the discrete degree of the etching amount when several points on the mask are etched through is calculated to obtain the critical dimension uniformity of the mask.

2. The method according to claim 1, characterized in that During the etching process of the mask, the step of controlling each of the light generating modules to emit light signals comprises: When the etching phase of the mask begins, each of the light generating modules is controlled to emit light signals simultaneously until the etching phase ends.

3. The method according to claim 2, characterized in that When the etching phase of the mask plate begins, the step of controlling each of the light generating modules to emit light signals simultaneously until the etching phase ends includes: When the etching phase of the mask begins, each of the light generating modules is controlled to emit a light signal with a light intensity of a preset second threshold until the etching phase ends; wherein the preset second threshold is greater than or equal to the preset first threshold.

4. The method according to claim 2, characterized in that The step of obtaining the time duration for a point corresponding to the light receiving module to reach the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any light receiving module reaches a preset first threshold comprises: When it is detected that the light intensity of the optical signal received by any of the optical receiving modules reaches a preset first threshold, the time elapsed from the start of the etching stage to the current moment is determined to obtain the time length experienced when the point corresponding to the optical receiving module reaches the etching through state.

5. The method according to claim 1, characterized in that The method further comprises: During the etching process of the mask, the mask, each of the light generating modules and each of the light receiving modules are controlled to rotate synchronously.

6. The method according to claim 1, characterized in that The step of calculating the discreteness of the etching amount when a plurality of points on the mask are etched through based on the time taken for each point to reach the etching through state and the etching rate of the mask obtained in advance to obtain the uniformity of the critical dimension of the mask comprises: Based on the time taken for each of the points to reach the etching through state, calculating the standard deviation of the time taken for a number of points on the mask to reach the etching through state; The discrete degree of the etching amount when a plurality of points on the mask are etched through is calculated based on the standard deviation of the elapsed time and the etching rate, so as to obtain the critical dimension uniformity of the mask.

7. A mask parameter measurement device, characterized in that: The mask parameter measurement device is applied to the mask parameter measurement system, and the mask parameter measurement system includes a light generating device and a light receiving device, and the light generating device and the light receiving device are arranged on opposite sides of the mask; the mask includes a plurality of points; the light generating device includes a plurality of light generating modules; The light receiving device includes a plurality of light receiving modules, each of the points, each of the light receiving modules corresponds to each of the light generating modules, and the device includes: A control module, used for controlling each of the light generating modules to emit light signals during the etching process of the mask; A first determination module is used to obtain the time length when the point corresponding to the light receiving module reaches the etching through state by detecting the time corresponding to when the light intensity of the light signal received by any of the light receiving modules reaches a preset first threshold; The second determination module is used to calculate the discrete degree of the etching amount when several points on the mask are etched through based on the time it takes for each point to reach the etching through state and the etching rate of the mask obtained in advance, so as to obtain the critical dimension uniformity of the mask.

8. A mask parameter measurement device, characterized in that: The mask parameter measuring device comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the mask parameter measuring method according to any one of claims 1 to 6.

9. A mask parameter measurement system, characterized in that: The mask parameter measurement system includes a light generating device, a light receiving device and a mask parameter measurement device as described in claim 8, wherein the mask parameter measurement device is communicatively connected with the light generating device and the light receiving device respectively; the light generating device and the light receiving device are arranged on opposite sides of the mask; the mask includes a plurality of points; the light generating device includes a plurality of light generating modules; the light receiving device includes a plurality of light receiving modules, and each of the points, each of the light receiving modules and each of the light generating modules correspond one to one.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the steps of the method for measuring parameters of a mask according to any one of claims 1 to 6 are implemented.

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