A micro light emitting diode display panel and a method for forming the same

Abstract

The present invention relates to a micro-light emitting diode display panel and a method for forming the same, and to the field of semiconductor display technology. In the method for forming the micro-light emitting diode display panel of the present invention, before transferring micro-LED chips of various colors to a driving substrate, a packaging layer is formed on the side of the micro-LED chips of various colors by a spraying process in advance, and then the side of the micro-LED chips of various colors is subjected to a metal ion implantation process so that the metal ions are implanted into the packaging layer, and then a heat treatment is performed so that the metal ions respectively implanted into the packaging layer are agglomerated to form metal nanoparticles, and then the micro-LED chips of various colors are transferred to the driving substrate, so that the packaging layer has a reflective function, thereby avoiding the need to set up an additional black matrix and reducing the difficulty of the packaging process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor display technology, and in particular to a micro light emitting diode display panel and a method for forming the same. Background Art

[0002] The display principle of the micro-LED display panel is as follows: first, the structure of the LED chip is thinned, miniaturized and arrayed, so that the size of the micro-LED unit is only about 1~10μm level, and then the micro-LED units are transferred to the driving circuit substrate in batches (the driving circuit substrate includes the lower electrode and the transistor), and then the protective layer and the upper electrode are prepared by physical vapor deposition and / or chemical vapor deposition process, and finally the upper substrate is packaged to obtain the micro-LED display panel. In the existing micro-LED display panel, in order to avoid optical crosstalk between adjacent micro-LED units, a black matrix needs to be set, which makes the packaging of the micro-LED display panel difficult. Summary of the invention

[0003] The object of the present invention is to overcome the above-mentioned deficiencies of the prior art and to provide a micro light emitting diode display panel and a method for forming the same.

[0004] To achieve the above object, the present invention provides a method for forming a micro light emitting diode display panel, the method comprising the following steps:

[0005] A first temporary carrier, a second temporary carrier and a third temporary carrier are provided, and a plurality of first color micro LED chips, a plurality of second color micro LED chips and a plurality of third color micro LED chips are respectively arranged on the first temporary carrier, the second temporary carrier and the third temporary carrier.

[0006] The first encapsulation layer, the second encapsulation layer, and the third encapsulation layer are respectively formed by a spraying process, wherein the first encapsulation layer wraps each of the first color micro LED chips, the second encapsulation layer wraps each of the second color micro LED chips, and the third encapsulation layer wraps each of the third color micro LED chips.

[0007] Then, metal ion implantation is performed on the side of each of the first color micro LED chips, the side of each of the second color micro LED chips, and the side of each of the third color micro LED chips, so that the metal ions are respectively implanted into the first packaging layer, the second packaging layer, and the third packaging layer.

[0008] The first encapsulation layer, the second encapsulation layer and the third encapsulation layer are respectively heat-treated so that the metal ions respectively injected into the first encapsulation layer, the second encapsulation layer and the third encapsulation layer are agglomerated to form metal nanoparticles.

[0009] A driving substrate is provided, and a plurality of the first color micro LED chips, a plurality of the second color micro LED chips, and a plurality of the third color micro LED chips are respectively transferred to the driving substrate, with a second color micro LED chip and a third color micro LED chip being provided between adjacent first color micro LED chips.

[0010] An organic encapsulation layer is formed on the driving substrate, and the organic encapsulation layer is subjected to a grinding process.

[0011] As a preferred technical solution, the first color micro LED chip, the second color micro LED chip and the third color micro LED chip have different colors.

[0012] As a preferred technical solution, the materials of the first temporary carrier plate, the second temporary carrier plate and the third temporary carrier plate include plastic, ceramic, metal or ceramic.

[0013] As a preferred technical solution, the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer are respectively formed by an electrostatic spraying process.

[0014] As a preferred technical solution, the electrostatic voltage of the electrostatic spraying process is 20-80KV, and the spraying pressure is 0.2-0.5MPa. After the electrostatic spraying process, the first packaging layer, the second packaging layer and the third packaging layer are heat treated at 100-300°C respectively.

[0015] As a preferred technical solution, the specific process of the metal ion implantation treatment is: the implanted metal ions are one or more of aluminum, copper, silver, nickel, platinum, titanium, and palladium.

[0016] As a preferred technical solution, the metal ion implantation dose is 4×10 15 cm -2 -6×10 17 cm -2 , the injection energy of the metal ions is 200 eV-10000 eV.

[0017] As a preferred technical solution, the heat treatment temperature is 200°C-600°C, and the heat treatment time is 100 seconds-800 seconds.

[0018] The present invention further provides a micro-LED display panel, which is manufactured by using the above-mentioned method for forming the micro-LED display panel.

[0019] The beneficial effects of the present invention are:

[0020] In the method for forming a micro-light emitting diode display panel of the present invention, before transferring the micro-LED chips of each color to the driving substrate, a packaging layer is formed on the side of the micro-LED chips of each color by a spraying process in advance, and then the side of the micro-LED chips of each color is treated with metal ion implantation so that the metal ions are injected into the packaging layer, and then heat treatment is performed so that the metal ions respectively injected into the packaging layer are agglomerated to form metal nanoparticles, and then the micro-LED chips of each color are transferred to the driving substrate, so that the packaging layer has a reflective function, thereby avoiding the additional setting of a black matrix and reducing the difficulty of the packaging process. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram showing the structure of respectively arranging micro LED chips of different colors on different temporary carriers in an embodiment of the present invention.

[0022] Figure 2 It is a schematic diagram showing the structure of forming a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer in an embodiment of the present invention.

[0023] Figure 3 It is a schematic diagram showing the structure of metal nanoparticles formed by agglomeration of metal ions in the first encapsulation layer, the second encapsulation layer and the third encapsulation layer in an embodiment of the present invention.

[0024] Figure 4 It is a schematic diagram showing the structure of transferring micro LED chips of each color to a driving substrate in an embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0026] like Figure 1 to Figure 4 As shown, this embodiment provides a method for forming a micro light emitting diode display panel, and the method for forming a micro light emitting diode display panel includes the following steps:

[0027] like Figure 1 As shown in a to c, a first temporary carrier 100, a second temporary carrier 200 and a third temporary carrier 300 are provided, and a plurality of first color micro LED chips 101, a plurality of second color micro LED chips 201 and a plurality of third color micro LED chips 301 are respectively arranged on the first temporary carrier 100, the second temporary carrier 200 and the third temporary carrier 300.

[0028] In a specific embodiment, the materials of the first temporary carrier plate 100 , the second temporary carrier plate 200 and the third temporary carrier plate 300 include plastic, ceramic, metal or ceramic.

[0029] In a specific embodiment, the first color micro LED chip 101, the second color micro LED chip 201 and the third color micro LED chip 301 have different colors. More specifically, the first color micro LED chip 101 is a red LED, the second color micro LED chip 201 is a green LED, and the third color micro LED chip 301 is a blue LED.

[0030] In a specific implementation, two micro LED chips can be accommodated between adjacent micro LED chips 101 of the first color, between adjacent micro LED chips 201 of the second color, and between adjacent micro LED chips 301 of the third color, thereby facilitating the transfer of micro LED chips of different colors during the subsequent transfer of micro LED chips.

[0031] like Figure 2 As shown in a to c, a first encapsulation layer 110, a second encapsulation layer 210, and a third encapsulation layer 310 are respectively formed by a spraying process, wherein the first encapsulation layer 110 wraps each of the first color micro LED chips 101, the second encapsulation layer 210 wraps each of the second color micro LED chips 201, and the third encapsulation layer 310 wraps each of the third color micro LED chips 301.

[0032] In a specific embodiment, the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 are formed by an electrostatic spraying process. The electrostatic voltage of the electrostatic spraying process is 20-80KV, and the spraying pressure is 0.2-0.5MPa. After the electrostatic spraying process, the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 are heat treated at 100-300°C.

[0033] In a specific embodiment, the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 can be formed respectively by multiple electrostatic spraying processes. Specifically, the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 can be formed respectively by two electrostatic spraying processes. Specifically: the electrostatic voltage of the first electrostatic spraying treatment is 50-80KV, and the spraying pressure is 0.3-0.5MPa. After the first electrostatic spraying treatment, the sprayed encapsulation layer is heat-treated at 100-300°C. The electrostatic voltage of the second electrostatic spraying treatment is 20-60KV, and the spraying pressure is 0.2-0.4MPa. After the first electrostatic spraying treatment, the sprayed encapsulation layer is heat-treated at 100-300°C. Among them, the spraying pressure of the first electrostatic spraying treatment is greater than the spraying pressure of the second electrostatic spraying treatment, thereby effectively improving the compactness of the internal packaging layer, and then in the subsequent metal ion injection process, a large number of metal ions can be controlled to be in the packaging layer, thereby blocking the metal ions from entering the micro-LED chips of each color, thereby avoiding damage to the micro-LED chips of each color. In a preferred embodiment, the electrostatic voltage of the first electrostatic spraying treatment is 50KV, 60KV, 70KV or 80KV, and the spraying pressure is 0.3MPa, 0.4MPa or 0.5MPa, respectively. The electrostatic voltage of the second electrostatic spraying treatment is 20KV, 30KV, 40KV, 50KV or 60KV, the spraying pressure is 0.2MPa, 0.3MPa or 0.4MPa, and the spraying pressure of the first electrostatic spraying treatment is ensured to be greater than the spraying pressure of the second electrostatic spraying treatment. The electrostatic voltage of the first electrostatic spraying treatment can be further set to be greater than the electrostatic voltage of the second electrostatic spraying treatment, and then the encapsulation layer after the first electrostatic spraying is heat treated at 100°C, 150°C, 200°C, 250°C or 300°C, and the encapsulation layer after the second electrostatic spraying is heat treated at 100°C, 150°C, 200°C, 250°C or 300°C.

[0034] In a more preferred embodiment, the material of the first encapsulation layer 110 , the second encapsulation layer 210 , and the third encapsulation layer 310 includes one or more of epoxy resin, polyimide, silicon oxide, zirconium oxide, aluminum oxide, and silicon nitride.

[0035] like Figure 3As shown in a to c, metal ion implantation treatment is then performed on the side surfaces of each of the first-color micro LED chips 101, the side surfaces of each of the second-color micro LED chips 201, and the side surfaces of each of the third-color micro LED chips 301, so that the metal ions are respectively injected into the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310, and then the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 are heat-treated, so that the metal ions respectively injected into the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310 are agglomerated to form metal nanoparticles 400.

[0036] In a specific embodiment, the specific process of the metal ion implantation treatment is: the implanted metal ions are one or more of aluminum, copper, silver, nickel, platinum, titanium, and palladium. The implantation dose of the metal ions is 4×10 15 cm -2 -6×10 17 cm -2 The implantation energy of the metal ions is 200 eV-10000 eV. The heat treatment temperature is 200° C.-600° C., and the heat treatment time is 100 seconds-800 seconds.

[0037] In a specific embodiment, the implantation dose of the metal ions is 4×10 15 cm -2 ,9×10 15 cm -2 , 3×10 16 cm -2 , 8×10 16 cm -2 , 3×10 17 cm -2 The injection energies of the metal ions are 200 eV, 600 eV, 1000 eV, 3000 eV, 5000 eV, 7000 eV, and 10000 eV, respectively. According to the specific materials of the first encapsulation layer 110, the second encapsulation layer 210, and the third encapsulation layer 310, appropriate injection doses and injection energies are selected to obtain appropriate injection depths.

[0038] In a specific embodiment, the heat treatment temperature is 200°C, 300°C, 400°C, 500°C, and 600°C, and the heat treatment time is 100 seconds, 200 seconds, 300 seconds, 400 seconds, 500 seconds, 600 seconds, 700 seconds, and 800 seconds, respectively. According to the specific material of each packaging layer, the appropriate heat treatment temperature and time are selected to obtain the metal nanoparticles 400 of appropriate particle size.

[0039] like Figure 4 As shown, a driving substrate 500 is provided, and a plurality of the first color micro LED chips 101, a plurality of the second color micro LED chips 201, and a plurality of the third color micro LED chips 301 are respectively transferred to the driving substrate 500, and there is a second color micro LED chip 201 and a third color micro LED chip 301 between adjacent first color micro LED chips 101.

[0040] In a specific embodiment, an organic encapsulation layer 600 is formed on the driving substrate 500 , and the organic encapsulation layer 600 is ground to expose the plurality of first color micro LED chips 101 , the plurality of second color micro LED chips 201 , and the plurality of third color micro LED chips 301 .

[0041] In a specific implementation, the organic encapsulation layer 600 is epoxy resin.

[0042] like Figure 4 As shown, the present invention further proposes a micro-LED display panel, which is manufactured by using the above-mentioned method for forming a micro-LED display panel.

[0043] In other preferred technical solutions, the present invention provides a method for forming a micro-LED display panel, and the method for forming a micro-LED display panel includes the following steps:

[0044] A first temporary carrier, a second temporary carrier and a third temporary carrier are provided, and a plurality of first color micro LED chips, a plurality of second color micro LED chips and a plurality of third color micro LED chips are respectively arranged on the first temporary carrier, the second temporary carrier and the third temporary carrier.

[0045] The first encapsulation layer, the second encapsulation layer, and the third encapsulation layer are respectively formed by a spraying process, wherein the first encapsulation layer wraps each of the first color micro LED chips, the second encapsulation layer wraps each of the second color micro LED chips, and the third encapsulation layer wraps each of the third color micro LED chips.

[0046] Then, metal ion implantation is performed on the side of each of the first color micro LED chips, the side of each of the second color micro LED chips, and the side of each of the third color micro LED chips, so that the metal ions are respectively implanted into the first packaging layer, the second packaging layer, and the third packaging layer.

[0047] The first encapsulation layer, the second encapsulation layer and the third encapsulation layer are respectively heat-treated so that the metal ions respectively injected into the first encapsulation layer, the second encapsulation layer and the third encapsulation layer are agglomerated to form metal nanoparticles.

[0048] A driving substrate is provided, and a plurality of the first color micro LED chips, a plurality of the second color micro LED chips, and a plurality of the third color micro LED chips are respectively transferred to the driving substrate, with a second color micro LED chip and a third color micro LED chip being provided between adjacent first color micro LED chips.

[0049] An organic encapsulation layer is formed on the driving substrate, and the organic encapsulation layer is subjected to a grinding process.

[0050] In a more preferred technical solution, the first color micro LED chip, the second color micro LED chip and the third color micro LED chip have different colors.

[0051] In a more preferred technical solution, the materials of the first temporary carrier plate, the second temporary carrier plate and the third temporary carrier plate include plastic, ceramic, metal or ceramic.

[0052] In a more optimal technical solution, the first packaging layer, the second packaging layer, and the third packaging layer are respectively formed by an electrostatic spraying process.

[0053] In a more optimal technical solution, the electrostatic voltage of the electrostatic spraying process is 20-80KV, the spraying pressure is 0.2-0.5MPa, and after the electrostatic spraying process, the first packaging layer, the second packaging layer and the third packaging layer are heat treated at 100-300°C respectively.

[0054] In a more preferred technical solution, the specific process of the metal ion implantation treatment is: the implanted metal ions are one or more of aluminum, copper, silver, nickel, platinum, titanium, and palladium.

[0055] In a more preferred technical solution, the implantation dose of the metal ions is 4×10 15 cm -2 -6×10 17 cm -2 , the injection energy of the metal ions is 200 eV-10000 eV.

[0056] In a more optimal technical solution, the heat treatment temperature is 200°C-600°C, and the heat treatment time is 100 seconds-800 seconds.

[0057] In a more optimal technical solution, the present invention further proposes a micro-LED display panel, which is manufactured using the above-mentioned method for forming a micro-LED display panel.

[0058] In the method for forming a micro-light emitting diode display panel of the present invention, before transferring the micro-LED chips of each color to the driving substrate, a packaging layer is formed on the side of the micro-LED chips of each color by a spraying process in advance, and then the side of the micro-LED chips of each color is treated with metal ion implantation so that the metal ions are injected into the packaging layer, and then heat treatment is performed so that the metal ions respectively injected into the packaging layer are agglomerated to form metal nanoparticles, and then the micro-LED chips of each color are transferred to the driving substrate, so that the packaging layer has a reflective function, thereby avoiding the additional setting of a black matrix and reducing the difficulty of the packaging process.

[0059] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for forming a micro light emitting diode display panel, Features: The method for forming the micro light emitting diode display panel comprises the following steps: Providing a first temporary carrier, a second temporary carrier, and a third temporary carrier, on which a plurality of first color micro LED chips, a plurality of second color micro LED chips, and a plurality of third color micro LED chips are respectively arranged; Forming a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer respectively by a spraying process, wherein the first encapsulation layer encapsulates each of the first-color micro LED chips, the second encapsulation layer encapsulates each of the second-color micro LED chips, and the third encapsulation layer encapsulates each of the third-color micro LED chips; Then, metal ion implantation is performed on the side of each micro LED chip of the first color, the side of each micro LED chip of the second color, and the side of each micro LED chip of the third color, respectively, so that metal ions are implanted into the first packaging layer, the second packaging layer, and the third packaging layer, respectively. The specific process of the metal ion implantation is as follows: the implantation dose of the metal ions is 4×10 15 cm -2 -6×10 17 cm -2 , the injection energy of the metal ions is 200eV-10000eV; performing heat treatment on the first encapsulation layer, the second encapsulation layer and the third encapsulation layer respectively, so that the metal ions respectively injected into the first encapsulation layer, the second encapsulation layer and the third encapsulation layer agglomerate to form metal nanoparticles; Providing a driving substrate, transferring a plurality of the first color micro LED chips, a plurality of the second color micro LED chips, and a plurality of the third color micro LED chips to the driving substrate respectively, with one second color micro LED chip and one third color micro LED chip being arranged between adjacent first color micro LED chips; An organic encapsulation layer is formed on the driving substrate, and the organic encapsulation layer is subjected to a grinding process.

2. The method for forming a micro light emitting diode display panel according to claim 1, Features: The first color micro LED chip, the second color micro LED chip, and the third color micro LED chip have different colors.

3. The method for forming a micro light emitting diode display panel according to claim 1, Features: The materials of the first temporary carrier plate, the second temporary carrier plate and the third temporary carrier plate include plastic, ceramic, metal or ceramic.

4. The method for forming a micro light emitting diode display panel according to claim 1, Features: The first packaging layer, the second packaging layer and the third packaging layer are respectively formed by an electrostatic spraying process.

5. The method for forming a micro light emitting diode display panel according to claim 4, Features: The electrostatic voltage of the electrostatic spraying process is 20-80 KV, and the spraying pressure is 0.2-0.5 MPa. After the electrostatic spraying process, the first packaging layer, the second packaging layer and the third packaging layer are heat treated at 100-300° C. respectively.

6. The method for forming a micro light emitting diode display panel according to claim 1, Features: The specific process of the metal ion implantation treatment is: the metal ions implanted are one or more of aluminum, copper, silver, nickel, platinum, titanium, and palladium.

7. The method for forming a micro light emitting diode display panel according to claim 1, Features: The heat treatment temperature is 200°C-600°C, and the heat treatment time is 100 seconds-800 seconds.

8. A micro light emitting diode display panel, It is characterized in that The micro-light emitting diode display panel is manufactured by the method for forming the micro-light emitting diode display panel according to any one of claims 1 to 7.

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