Vapor deposition equipment, temperature control method, equipment and medium for vapor deposition equipment

Abstract

The present application discloses a vapor deposition device, a temperature control method for the vapor deposition device, a device and a medium, and generally relates to the field of vapor deposition technology. The device includes: a first electrode and a second electrode arranged opposite to each other, a gas homogenizer is arranged on the side of the first electrode close to the second electrode, a first space is provided between the gas homogenizer and the second electrode, and a temperature control plate is provided on the side of the first electrode away from the second electrode; the first electrode and the gas homogenizer are arranged opposite to each other and are electrically connected through a connector; the connector includes a hollow structure, and the hollow structure is within the orthographic projection of the gas homogenizer in the middle area of ​​the first electrode; wherein the first electrode and the gas homogenizer are respectively arranged on the end faces on both sides of the connector, and / or, a first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and in the outer area of ​​the connector on the orthographic projection of the gas homogenizer.

Description

Technical Field

[0001] The present disclosure generally relates to the field of vapor deposition technology, and more particularly to a vapor deposition device, a temperature control method for the vapor deposition device, a device, and a medium. Background Art

[0002] With the continuous development of electronic technology, uniformly covering the substrate with a film layer is a commonly used technology.

[0003] In general, existing electronic devices tend to be miniaturized and thinner. Therefore, it is very important to accurately attach a thin film layer of a fixed thickness to a substrate. Among related technologies, vapor deposition technology can achieve the effect of attaching a thin film layer of a precise thickness to a substrate.

[0004] However, as the vapor deposition technology increases the speed of film formation over time, the thickness of the film may be thicker than required, thereby affecting the performance of the substrate. Summary of the Invention

[0005] In view of the above-mentioned defects or deficiencies in the relevant technology, it is hoped to provide a vapor deposition device, a temperature control method, a device and a medium for the vapor deposition device, which can solve the problem that the vapor deposition technology will make the speed of generating film layers faster and faster over time, which may cause the generated thickness of the film layer to be thicker than the required thickness, thereby affecting the use effect of the substrate, ensuring the stability of the film thickness, and improving the reliability of the film layer on the substrate.

[0006] In a first aspect, a vapor deposition apparatus is provided, comprising:

[0007] The device comprises: a first electrode and a second electrode arranged opposite to each other, a gas homogenizer being provided on a side of the first electrode close to the second electrode, a first space being provided between the gas homogenizer and the second electrode, the first space being used to place a substrate, and a temperature control plate being provided on a side of the first electrode away from the second electrode;

[0008] The first electrode is arranged opposite to the gas homogenizer and is electrically connected to the gas homogenizer through a connecting piece, and the connecting piece is made of a heat-conducting metal material;

[0009] The connecting member includes at least one hollow structure, and the at least one hollow structure is within the orthographic projection of the gas homogenizer at a middle area of ​​the first electrode;

[0010] The first electrode and the gas homogenizer are respectively arranged on the end surfaces on both sides of the connecting piece, and / or a first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and in the outer area of ​​the connecting piece on the outer side of the positive projection area of ​​the gas homogenizer.

[0011] In the present application, the vapor deposition equipment includes a first electrode and a second electrode arranged opposite to each other, wherein a gas homogenizer is arranged on the side of the first electrode close to the second electrode, a first space for arranging a substrate is provided between the gas homogenizer and the second electrode, and a temperature control plate is provided on the side of the first electrode away from the second electrode; further, the first electrode and the gas homogenizer are arranged opposite to each other and are electrically connected through a connector, the connector includes at least one hollow structure, and the at least one hollow structure is within the orthographic projection of the gas homogenizer in the middle area of ​​the first electrode; wherein the first electrode and the gas homogenizer are respectively arranged on the end surfaces on both sides of the connector, and / or a first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and in the outer area of ​​the connector on the orthographic projection area of ​​the gas homogenizer. In this way, the first electrode and the gas homogenizer are connected through a connector with an end face, so that the heat in the gas homogenizer can be conducted and dissipated through the end face of the connector, or the temperature of the gas homogenizer can be kept constant through the first temperature control pipeline, thereby greatly reducing the temperature change rate of the gas homogenizer caused by the temperature rise of the first space, keeping the temperature of the gas homogenizer stable, and thus ensuring that the temperature of the vapor deposition equipment is stable during the process of vapor deposition to generate a film layer, the thickness of the film layer is consistent, and the subsequent use effect of the substrate is good.

[0012] In a second aspect, a temperature control method for a vapor deposition device is provided, the method comprising: when the temperature of the gas homogenizer is greater than a preset temperature, controlling the temperature control plate to start so that the heat conduction rate of the first temperature control pipeline matches the heat generation rate of the substrate.

[0013] In a third aspect, a computer device is provided, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the program, the method described in the second aspect is implemented.

[0014] In a fourth aspect, a computer-readable storage medium is provided, on which a computer program is stored, characterized in that when the program is executed by a processor, the method described in the second aspect is implemented.

[0015] In a fifth aspect, a computer program product is provided. The computer program product includes instructions, and when the instructions are executed by a processor, the method described in the second aspect is implemented.

[0016] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Other features, objects and advantages of the present application will become more apparent upon reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0018] Figure 1 This is one of the structural schematic diagrams of a vapor deposition device in the related art;

[0019] Figure 2 This is the second structural diagram of a vapor deposition device in the related art;

[0020] Figure 3 One of the temperature curve diagrams of the vapor deposition equipment provided in the embodiment of the present application

[0021] Figure 4 This is one of the structural schematic diagrams of the vapor deposition equipment provided in the embodiment of the present application;

[0022] Figure 5 The second structural diagram of the vapor deposition equipment provided in the embodiment of the present application;

[0023] Figure 6 The third structural diagram of the vapor deposition equipment provided in the embodiment of the present application;

[0024] Figure 7 The fourth structural diagram of the vapor deposition equipment provided in the embodiment of the present application;

[0025] Figure 8 A schematic flow chart of a temperature control method for a vapor deposition device according to an embodiment of the present application;

[0026] Figure 9 A schematic diagram of the structure of a computer device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0027] The present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely for the purpose of explaining the relevant invention and are not intended to limit the invention. It should also be noted that, for ease of description, only portions relevant to the invention are shown in the accompanying drawings.

[0028] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] With the continuous development of electronic technology, uniformly covering the substrate with a film layer is a commonly used technology.

[0030] In general, existing electronic devices tend to be miniaturized and thin, so it is very important to accurately attach a fixed thickness, relatively thin film layer on the substrate. In related technologies, vapor deposition technology can achieve the above-mentioned effect of attaching a thin, precise thickness film layer on the substrate. For example, in order to make the luminous color of the display panel more accurate and reduce the color deviation of the display panel, a thin film encapsulation process for generating a CVD film layer, that is, the above-mentioned vapor deposition technology, can be used to prepare a CVD film with the required refractive index between the optical functional layer and the thin film encapsulation layer of the display panel, so that the light emitted by the optical functionality can be free of color deviation, and ultimately the display of the display panel is more accurate.

[0031] like Figure 1 and Figure 2 As shown, Figure 1 This is the side cross-sectional view corresponding to the vapor deposition equipment. Figure 2 It is a three-dimensional diagram of part of the structure of the vapor deposition equipment. Figure 1 It can be seen that the vapor deposition equipment includes two electrodes, a lower electrode 11 and a back electrode 12, and a gas reactor 13 is arranged below the back electrode 12, wherein the back electrode 12 and the gas reactor 13 need to be relatively suspended and electrically connected, and therefore, are connected through an electrical connection sheet 14. Furthermore, a placement space 15 for placing a substrate waiting to be deposited with a film layer by the vapor deposition equipment is provided between the gas reactor 13 and the lower electrode 11. During the vapor deposition process, a substrate (for example, a substrate of a display panel) can be placed in the placement space 15, and the gas ions are separated by the electrolysis of the gas by the vapor deposition equipment, and finally the separated ions cover the substrate to form a film layer.

[0032] Further, by Figure 2 As shown, in Figure 2 Figure 1 shows a three-dimensional stereoscopic image of the back electrode 12, gas reactor 13, and electrical connection sheet 14. It can be seen that the back electrode 12 and gas reactor are electrically connected via a very thin, surrounding hollow sheet 14 and are suspended relative to each other. Specifically, during the actual vapor deposition process, both the back electrode 12 and gas reactor 13 are provided with a number of uniform pores. To ensure uniform gas reaction and coverage, gas is introduced through the central pores of the back electrode 12, passes through the hollow region of the sheet 14, reaches the gas reactor, and then electrolyzes the gas. The electrolyzed gas ions are then evenly distributed above the substrate through the pores of the gas reactor 13, forming a film layer.

[0033] As the temperature in the placement space 15 continues to rise as the coating process proceeds, the temperature of the gas reactor 13 will also rise accordingly. As the temperature of the gas reactor 13 rises, the electrolysis rate and the film formation rate of the substrate will continue to accelerate.

[0034] like Figure 3 As shown, Figure 3 As can be seen from line A in the figure, as the temperature rises, the gas reactor 13 causes the film formation rate of the substrate to continue to increase. In the case where the substrate is a substrate of a display panel, the thickness of the film layer may eventually be thicker than the required thickness, affecting the accuracy of the color displayed by the display panel.

[0035] Based on this, the present application proposes a vapor deposition device that can solve the problem that the vapor deposition technology will make the speed of generating film layers faster and faster over time, which may cause the thickness of the generated film layer to be thicker than the required thickness, thereby affecting the use effect of the substrate, ensuring the stability of the film thickness, and improving the reliability of the film layer on the substrate.

[0036] like Figure 4 As shown, Figure 4 This is a vapor deposition device according to an embodiment of the present application, characterized in that the device includes: a first electrode and a second electrode arranged opposite to each other, a gas uniformizer is arranged on the side of the first electrode close to the second electrode, a first space is arranged between the gas uniformizer and the second electrode, the first space is used to arrange a substrate, and a temperature control plate is arranged on the side of the first electrode away from the second electrode.

[0037] Illustratively, the first electrode may be an electrode in a vapor deposition device for delivering gas to a gas homogenizer and generating an electric field between the electrode and the gas homogenizer.

[0038] Illustratively, the areas of the first electrode and the second electrode may be the same.

[0039] Illustratively, the area of ​​the first electrode and the area of ​​the second electrode may be the same as or different from the area of ​​the substrate disposed in the first space.

[0040] It is understood that the above-mentioned vapor deposition equipment is used to coat substrates, and generally, the coating of the substrate should be of a fixed and uniform thickness. At the same time, the vapor deposition equipment often needs to coat multiple different substrates during the operating time. In the process of coating each substrate, in order to ensure uniform film thickness and accurate fixation of the film thickness, the area of ​​the substrate and the first electrode and the area of ​​the second electrode are set to be the same as the area of ​​the substrate placed in the first space. This allows the same substrate to be coated at a time, with high speed and high accuracy.

[0041] In an example, the first electrode may be a backing plate.

[0042] In one example, the second electrode may be a bottom electrode (Susceptor).

[0043] Exemplarily, the gas homogenizer is used to electrolyze the gas and uniformly transport the electrolyzed gas ions to attach to the surface of the substrate.

[0044] In one example, the gas homogenizer may be a gas reactor (Diffuser).

[0045] In the embodiment of the present application, the first electrode and the gas homogenizer are arranged opposite to each other and are respectively attached to the end surfaces on both sides of the connecting member, wherein the connecting member is a heat conducting member.

[0046] Illustratively, a first space for arranging a substrate is provided between the gas homogenizer and the second electrode.

[0047] It can be understood that the substrate is a substrate to be coated, that is, a substrate to be covered with a film layer by vapor deposition.

[0048] Furthermore, the range of the first space is related to the thickness and duration of the substrate to be coated, and is an adjustable space size.

[0049] For example, if the user requires the substrate to be coated in a shorter time, the first space can be set to be smaller, that is, the distance between the gas reactor and the second electrode can be set closer. For another example, if the user requires the substrate coating to be thinner and the film thickness to be more accurate, the first space can be set to be larger, that is, the distance between the gas reactor and the second electrode can be set to be farther. This embodiment of the present application does not limit this.

[0050] Exemplarily, a temperature control plate may be provided on a side of the first electrode away from the second gas electrode and the gas homogenizer.

[0051] In one example, the temperature control plate is a non-electric cooling structure with a plurality of temperature control pipelines arranged on a side away from the second electrode.

[0052] In one example, the temperature control plate may include several temperature control pipelines arranged on the side away from the second electrode, and the temperature control plate may be provided with an electric cooling structure of a power pump and a cooling system outside the area where the vapor deposition equipment is located.

[0053] Furthermore, in the case where the above-mentioned temperature control plate is an electric cooling structure, by starting the temperature control plate, the temperature control plate continuously circulates the heat-conducting liquid in the temperature control pipeline through the power pump, and at the same time transmits the heat-conducting liquid that has absorbed heat and heated up to the cooling system for cooling, and then transmits it to the temperature control pipeline and the first temperature control pipeline again for cooling the first electrode and the gas homogenizer respectively.

[0054] In the embodiment of the present application, the first electrode is arranged opposite to the gas homogenizer and is electrically connected to the gas homogenizer through a connector.

[0055] Exemplarily, the connecting member is an electrode transmission path between the first electrode and the gas homogenizer.

[0056] It is understood that in order to achieve vapor deposition, the principle of vapor deposition is to electrolyze a gas through the electrolysis between the gas homogenizer and the first electrode, thereby separating the gas into ions. The target ions are then attached to the substrate surface through the interaction of the first and second electrodes to form a film layer. Therefore, the connector needs to serve as an electrical connector between the first electrode and the gas homogenizer to enable the first electrode and the gas homogenizer to complete the electrolysis of the gas.

[0057] In an embodiment of the present application, the connecting member includes at least one hollow structure, and the orthographic projection of the at least one hollow structure in the middle area of ​​the first electrode is within the orthographic projection of the gas homogenizer.

[0058] It is understood that the connector is used to isolate the gas homogenizer and the first electrode, so that they are suspended, that is, they are separated by a certain distance while also having an isolated space. Based on this, the gas homogenizer and the first electrode can be separated by a heat conducting member located between the gas homogenizer and the first electrode. At the same time, the connector has a hollow structure, so that there is a certain isolated space between the gas homogenizer and the first electrode.

[0059] Exemplarily, the above-mentioned hollow structure may be one hollow structure or multiple central control structures.

[0060] It can be understood that, in order to enable the ions decomposed from the gas to uniformly adhere to the substrate in the first space, when the hollow structure is a single hollow structure, it is necessary to make the gas and the ions decomposed from the gas uniformly output from the central region of the first backplane to the space isolated between the gas homogenizer and the first electrode, and then the gas electrolysis reaction occurs uniformly; when the hollow structure is multiple hollow structures, each of the multiple hollow structures can be the same. In this way, it is also possible to make the gas and the ions decomposed from the gas uniformly output from the central region of the first backplane to the space isolated between the gas homogenizer and the first electrode, and then the gas electrolysis reaction occurs uniformly.

[0061] For example, the multiple hollow structures can be a hollow structure in the form of a Chinese character "tian" composed of 4 frame structures.

[0062] In the embodiments of the present application, the first electrode and the gas homogenizer are respectively and adhesively disposed on the end faces on both sides of the connecting member, and / or a first temperature control pipeline communicating with the temperature control pipeline in the temperature control plate is disposed in the outer region of the projection area of the connecting member on the gas homogenizer on the side of the gas homogenizer close to the first electrode.

[0063] It can be understood that, in order to ensure the constant temperature of the gas homogenizer: Method 1: The connecting member can be set as a connecting member with two end faces, so that the first electrode and the gas homogenizer are respectively adhered to it for cooling; Method 2: The gas homogenizer is cooled by providing a first temperature control pipeline communicating with the temperature control pipeline in the temperature control plate on the surface of the gas homogenizer.

[0064] Furthermore, the above two methods can be used together, or only one of them can be used. The following is an explanation in turn:

[0065] Method 1: The first electrode and the gas homogenizer are respectively and adhesively disposed on the end faces on both sides of the connecting member.

[0066] Exemplarily, the end faces on both sides of the connecting member in contact with the first electrode and the gas homogenizer have a certain contact area.

[0067] Furthermore, the end face of the connecting member in contact with the first electrode and the end face of the connecting member in contact with the gas homogenizer can have the same area or different areas.

[0068] Still further, the shapes of these two end faces can be the same or different.

[0069] Exemplarily, the above-mentioned connecting member is used to heat-conduct the heat received by the gas homogenizer in the first space to the first electrode, or directly dissipate it to the area where the vapor deposition equipment is located, so that the temperature change of the gas homogenizer is within a preset range, or the temperature change rate of the gas homogenizer is significantly reduced.

[0070] Optionally, the connecting member is made of a heat-conducting metal material.

[0071] It is understandable that as a connector, it has both heat conduction and electrical connection functions. Therefore, it needs to be set to a heat-conducting metal material to achieve the above-mentioned heat conduction and electrical connection functions.

[0072] It can be understood that, when the connecting member with end surfaces on both sides conducts heat from the gas homogenizer to the first electrode, the heat of the first electrode will also increase accordingly.

[0073] Furthermore, generally, the operating temperature range corresponding to the electrolysis work of the first electrode is larger. Therefore, the first electrode is not easily affected by temperature changes and its working efficiency is affected. However, in order to prevent the temperature of the first electrode from exceeding the operating temperature range and ultimately affecting the normal working mode of the vapor deposition equipment, a temperature control plate can be set for the first electrode, and the temperature of the first electrode can be adjusted in time through the above-mentioned temperature control plate.

[0074] like Figure 4 and Figure 5 As shown, Figure 4 is a side cross-sectional view corresponding to the vapor deposition apparatus in the embodiment of the present application, Figure 5 It is a three-dimensional stereogram of part of the structure of the vapor deposition equipment in the embodiment of this application. Figure 4 As can be seen, the vapor deposition apparatus includes two electrodes: a lower electrode 31 (also known as the second electrode) and a back electrode 32 (also known as the first electrode). A gas reactor 33 (also known as the gas homogenizer) is located below the back electrode 32, on the side of the back electrode 32 closest to the lower electrode 31. A first space 34 is located between the gas reactor 33 and the lower electrode 31, specifically for placing the substrate on which the film layer will be formed during the vapor deposition process.

[0075] Furthermore, a hollow structure needs to be provided between the back electrode 32 and the gas reactor 33, so that the two are suspended from each other and need to be electrically connected. At the same time, since the gas reactor 33 is easily affected by the heat generated by the first space 34 during the vapor deposition process, a connector 35 with two end faces is provided between the gas reactor 33 and the back electrode 32, wherein the connector 35 is a heat conduction member, and the two end faces of the connector 35 are respectively attached to the back electrode 32 and the gas reactor 33, so that the gas reactor 33 can transfer heat through the end face of the connector 35 attached to it to the other end face of the connector 35 attached to the back electrode 32, and finally transfer the heat to the back electrode 32.

[0076] like Figure 5 As shown in the three-dimensional stereogram of the back electrode 32, the gas reactor 33 and the connecting piece 35, it can be seen that the back electrode 32 and the gas reactor 33 are electrically connected through the connecting piece 35. At the same time, the connecting piece 35 has a hollow structure 36. The hollow structure 36 is within the range of the positive projection of the gas reactor 33 in the middle area of ​​the back electrode 32.

[0077] Optionally, in an embodiment of the present application, the contact area between the connector and the gas homogenizer is greater than a preset area, so that the heat conduction rate corresponding to the connector matches the heat generation rate of the substrate.

[0078] It is understood that in order to prevent the gas reactor from being affected by temperature changes in the first space, that is, to enable the gas reactor to maintain a stable temperature, thereby ensuring that the film formation rate is uniform and constant within a controllable range, it is necessary to set the contact area between the connector and the contact end surface of the gas homogenizer to be larger than a preset area, wherein the preset area can match the heat conduction rate corresponding to the connector with the heat generation rate of the substrate to be vapor deposited. Specifically, the preset area can match the heat conduction rate corresponding to the connector with the heat generation rate of the first space where the substrate to be vapor deposited is located.

[0079] Furthermore, the contact area between the connecting member and the first electrode may be larger than the first preset area, so that the heat conduction rate corresponding to the connecting member matches the heat generation rate of the gas reactor.

[0080] like Figure 3 As shown by line B in FIG, as the time length increases, the temperature of the substrate in the actual first space also increases, which in turn causes the gas reactor to be affected by the temperature in the first space and increase in temperature. However, since the two side end surfaces are respectively attached to Figure 4The connecting piece 35 on the back electrode 32 and the gas reactor 33, and the heat conduction rate corresponding to the connecting piece 35 matches the heating rate of the substrate. Therefore, the heat received by the gas reactor 33 will be directly conducted upward to the back electrode 32 through the connecting piece 35, and will not remain in the gas reactor 33. Figure 3 The temperature of the gas reactor 33 indicated by the line B will remain constant, which will not affect the film forming rate of the substrate in the first space, and can also ensure that the film thickness of the substrate in the first space remains unchanged over time.

[0081] Method 2: A first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and outside the area of ​​the connector on the positive projection of the gas homogenizer.

[0082] It is understandable that, in order to ensure that the temperature of the gas homogenizer is sufficiently stable, a first temperature control pipeline connected to the temperature control pipeline may be provided on a side of the gas homogenizer close to the first electrode.

[0083] Furthermore, since the temperature of the temperature control pipeline in the temperature control plate can be controlled, the temperature of the first temperature control pipeline connected to the temperature control pipeline of the temperature control plate can also be controlled. When the temperature of the first temperature control pipeline can be controlled, the temperature of the gas homogenizer can be controlled by controlling the temperature of the first temperature control pipeline.

[0084] It should be noted that since a gas electrolysis reaction between the first electrode and the gas homogenizer can occur in at least one hollow structure of the connector, a high-density electric field is present in the at least one hollow structure. Therefore, the first temperature control pipeline can be arranged in an area outside the high-density electric field, that is, in an area outside the positive projection area of ​​the connector on the gas homogenizer.

[0085] like Figure 6 and Figure 7 As shown, Figure 6 is a side view of the vapor deposition equipment. Figure 7 It is a three-dimensional stereoscopic diagram corresponding to the vapor deposition equipment. The first temperature control pipeline 71 is connected to the temperature control pipeline 73 of the temperature control plate 72, and is arranged on the side of the gas reactor 33 close to the back electrode 32. Specifically, it is arranged in the outer area 74 of the connecting part 35 in the positive projection area of ​​the above-mentioned gas reactor 33.

[0086] In the present application, the vapor deposition equipment includes a first electrode and a second electrode arranged opposite to each other, wherein a gas homogenizer is arranged on the side of the first electrode close to the second electrode, a first space for arranging a substrate is provided between the gas homogenizer and the second electrode, and a temperature control plate is provided on the side of the first electrode away from the second electrode; further, the first electrode and the gas homogenizer are arranged opposite to each other and are electrically connected through a connector, the connector includes at least one hollow structure, and the at least one hollow structure is within the orthographic projection of the gas homogenizer in the middle area of ​​the first electrode; wherein the first electrode and the gas homogenizer are respectively arranged on the end surfaces on both sides of the connector, and / or a first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and in the outer area of ​​the connector on the orthographic projection area of ​​the gas homogenizer. In this way, the first electrode and the gas homogenizer are connected through a connector with an end face, so that the heat in the gas homogenizer can be conducted and dissipated through the end face of the heat conduction member, or the temperature of the gas homogenizer can be kept constant through the first temperature control pipeline, thereby greatly reducing the temperature change rate of the gas homogenizer caused by the temperature rise of the first space, keeping the temperature of the gas homogenizer stable, and thus ensuring that the temperature of the vapor deposition equipment is stable during the process of vapor deposition to generate a film layer, the thickness of the film layer is consistent, and the subsequent use effect of the substrate is good.

[0087] Optionally, in an embodiment of the present application, the above-mentioned connecting member includes at least one closed annular structure, and the above-mentioned closed annular structure includes: an annular support structure, a first end face and a second end face, and the first end face is provided on the side of the above-mentioned annular support structure perpendicular to the above-mentioned first electrode, and the second end face is provided on the side of the above-mentioned annular support structure perpendicular to the above-mentioned gas uniformizer.

[0088] Illustratively, the first end surface is in contact with the first electrode, and the second end surface is in contact with the gas homogenizer.

[0089] Illustratively, the orthographic projection shape of the annular support structure on the gas homogenizer may include a variety of annular shapes, which is not limited in the embodiment of the present application.

[0090] In one example, the annular shape may be a circle, a square, or other polygons, such as a regular hexagon, a regular pentagon, a rhombus, etc., which is not limited in the embodiment of the present application.

[0091] Furthermore, the annular support structure of the above-mentioned connecting member may include one annular support structure or multiple annular support structures, which is not limited in the embodiments of the present application.

[0092] For example, Figure 5 As shown, in Figure 5, the ring shape is a single four-bordered rectangle.

[0093] Furthermore, the annular shape may be a four-frame rectangle, and the closed annular structure may be a frame structure corresponding to the four four-frame rectangles. Specifically, the connecting member may be a grid-shaped frame structure.

[0094] Optionally, in an embodiment of the present application, a plurality of connection holes are provided in the temperature control plate and in the area corresponding to the first electrode and the outer area.

[0095] Exemplarily, the diameter of the connecting hole is greater than or equal to the diameter of the first temperature control pipeline;

[0096] Exemplarily, the first temperature control pipeline is: the temperature control pipeline of the temperature control plate extends from the connection hole to the side of the gas homogenizer close to the first electrode, and is fitted onto the side of the gas homogenizer close to the first electrode.

[0097] For example, Figure 7 As shown, in Figure 7 It can be seen that a plurality of connection holes 75 are provided in the temperature control plate 72 and the area corresponding to the back electrode 32 and the outer area 74 . The apertures of these connection holes are greater than or equal to the aperture of the first temperature control pipeline 71 .

[0098] Specifically, the first temperature control pipeline 71 is a pipeline connected to the temperature control pipeline 73 in the temperature control plate 72. The temperature control pipeline 73 of the temperature control plate 72 extends from the connecting hole 75 to the side of the gas reactor 33 close to the back electrode 32, and is fitted with the pipeline arranged on the side of the gas reactor 33 close to the back electrode 32.

[0099] Optionally, in an embodiment of the present application, the orthographic projection range of the temperature control pipeline on the gas homogenizer is consistent with the fitting range of the first temperature control pipeline on the first electrode.

[0100] Exemplarily, the temperature control plate includes a plurality of temperature control pipes, wherein a temperature control pipe is provided in an area of ​​the temperature control plate corresponding to the bonding area of ​​the connector on the first electrode, and the temperature control pipe is used to control the temperature of the bonding area between the connector and the first electrode.

[0101] Optionally, in an embodiment of the present application, a heat-conducting medium is provided in the temperature-control pipeline, and the heat-conducting medium flows in the temperature-control pipeline.

[0102] For example, the heat-conducting medium may be hot compress oil, water, or other liquids with high heat-conducting efficiency, which is not limited in the embodiments of the present application.

[0103] Figure 8FIG. 1 is a flow chart of a temperature control method for a vapor deposition device provided by an embodiment of the present application. The method may be performed by the vapor deposition device described above. Figure 8 As shown, the method includes the following steps 301:

[0104] Step 301: When the temperature of the gas homogenizer is greater than a preset temperature, the temperature control plate is controlled to start, so that the heat conduction rate of the first temperature control pipeline matches the heat generation rate of the substrate.

[0105] Exemplarily, a heat-conducting medium is provided in the temperature-control pipeline of the temperature-control plate, and the heat-conducting medium flows in the temperature-control pipeline.

[0106] For example, the above-mentioned heat-conducting medium can refer to the above description, which will not be repeated here.

[0107] For example, the above-mentioned heat conduction rate and heat generation rate can refer to the above description and will not be elaborated here.

[0108] It is understandable that the temperature control panel may be a temperature control panel with a cooling system and a power pump.

[0109] Exemplarily, the power pump can enable the heat transfer liquid in the temperature control pipeline to self-circulate.

[0110] Exemplarily, the cooling system can be arranged in a non-cooling area of ​​the temperature control pipe (for example, the bonding area between the temperature control pipe and the first electrode). It can be understood that the cooling system is used to cool the heat-conducting medium in the temperature control pipe after absorbing the heat of the first substrate and the heat of the gas homogenizer.

[0111] The present application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the training rule determination method described in the present application. For example, Figure 8 The individual steps of the method are shown.

[0112] The present invention provides a computer program product, which includes instructions that are executed by a processor when the processor executes the instructions. Figure 8 The individual steps of the method are shown.

[0113] It should be noted that although the operations of the present method are described in a particular order in the drawings, this does not require or imply that the operations must be performed in this particular order, or that all illustrated operations must be performed to achieve desirable results.

[0114] It should be understood that the units recorded in the vapor deposition device correspond to the various steps in the method described in the accompanying drawings. Therefore, the operations and features described above for the method are also applicable to the vapor deposition device and the units contained therein, and will not be repeated here. The vapor deposition device can be pre-implemented in a browser or other security application of a computer device, or can be loaded into a browser or its security application of a computer device by downloading or other means. The corresponding units in the vapor deposition device can cooperate with the units in the computer device to implement the solution of the embodiment of the present application.

[0115] The several modules or units mentioned in the detailed description above are not necessarily divided into one module or unit. In fact, according to the embodiments of the present disclosure, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into multiple modules or units to be embodied.

[0116] It should be noted that for details not disclosed in the vapor deposition equipment of the embodiments of the present application, please refer to the details disclosed in the above embodiments of the present application, and no further details will be given here.

[0117] Reference below Figure 9 , Figure 9 FIG. 1 shows a schematic diagram of a computer device suitable for implementing an embodiment of the present application. Figure 9 As shown, computer system 1700 includes a central processing unit (CPU) 1701, which can perform various appropriate actions and processes according to programs stored in read-only memory (ROM) 1702 or programs loaded from storage 1708 into random access memory (RAM) 1703. RAM 1703 also stores various programs and data required for the system's operating instructions. CPU 1701, ROM 1702, and RAM 1703 are connected to each other via a bus 1704. An input / output (I / O) interface 1705 is also connected to bus 1704.

[0118] The following components are connected to the I / O interface 1705: an input section 1706 including a keyboard, mouse, and the like; an output section 1707 including devices such as a cathode ray tube (CRT), a liquid crystal display (LCD), and speakers; a storage section 1708 including devices such as a hard disk; and a communication section 1709 including a network interface card such as a LAN card or a modem. The communication section 1709 performs communication processing via a network such as the Internet. A drive 1710 is also connected to the I / O interface 1705 as needed. Removable media 1711, such as a magnetic disk, an optical disk, a magneto-optical disk, or a semiconductor memory, is installed in the drive 1710 as needed, so that computer programs read from the media can be installed in the storage section 1708 as needed.

[0119] In particular, according to the embodiment of the present application, the above reference flow chart Figure 8 The described processes can be implemented as a computer software program. For example, an embodiment of the present application includes a computer program product comprising a computer program carried on a computer-readable medium, the computer program containing program code for executing the method illustrated in the flowchart. In such an embodiment, the computer program contains program code for executing the method illustrated in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network via the communication section 1709 and / or installed from removable media 1711. When the computer program is executed by the central processing unit (CPU) 1701, the aforementioned functions defined in the system of the present application are performed.

[0120] It should be noted that the computer-readable medium described herein may be a computer-readable signal medium or a computer-readable storage medium, or any combination thereof. A computer-readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of computer-readable storage media may include, but are not limited to, an electrical connection having one or more conductors, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof. In this application, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. In this application, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable program code. This propagated data signal may take a variety of forms, including, but not limited to, electromagnetic signals, optical signals, or any suitable combination thereof. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium that can transmit, propagate, or transfer a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wire, optical cable, RF, or any suitable combination thereof.

[0121] The flowcharts and block diagrams in the accompanying drawings illustrate the possible implementation architecture, functions and operating instructions of the systems, methods and computer program products according to various embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or a part of code, and the aforementioned module, program segment, or a part of code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order than the order marked in the accompanying drawings. For example, the boxes represented by two connections can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of the boxes in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified function or operating instruction, or can be implemented using a combination of dedicated hardware and computer instructions.

[0122] The units or modules described in the embodiments of this application may be implemented in software or hardware. The units or modules described may also be provided in a processor. For example, a processor may be described as including a first receiving module, a second receiving module, and a sending module. The names of these units or modules do not, in some cases, limit the units or modules themselves.

[0123] As another aspect, the present application further provides a computer-readable storage medium, which may be included in the electronic device described in the above embodiments, or may exist independently and not be incorporated into the electronic device. The computer-readable storage medium stores one or more programs, which, when used by one or more processors, execute the temperature control method for the vapor deposition apparatus described in the present application.

[0124] The above description is merely a preferred embodiment of the present application and an illustration of the technical principles employed. Those skilled in the art should understand that the scope of disclosure in this application is not limited to technical solutions formed by a specific combination of the aforementioned technical features. It also encompasses other technical solutions formed by any combination of the aforementioned technical features or their equivalents, without departing from the aforementioned disclosed concepts. For example, a technical solution formed by replacing the aforementioned features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A vapor deposition device, characterized in that The device comprises: a first electrode and a second electrode arranged opposite to each other, a gas homogenizer being provided on a side of the first electrode close to the second electrode, a first space being provided between the gas homogenizer and the second electrode, the first space being used to place a substrate, and a temperature control plate being provided on a side of the first electrode away from the second electrode; The first electrode is arranged opposite to the gas homogenizer and is electrically connected to the gas homogenizer through a connecting piece, and the connecting piece is made of a heat-conducting metal material; The connecting member includes at least one hollow structure, and the at least one hollow structure is within the orthographic projection of the gas homogenizer at a middle area of ​​the first electrode; Among them, the first electrode and the gas homogenizer are respectively arranged on the end surfaces on both sides of the connecting piece, and a first temperature control pipeline connected to the temperature control pipeline in the temperature control plate is provided on the side of the gas homogenizer close to the first electrode and in the outer area of ​​the connecting piece on the outer side of the positive projection area of ​​the gas homogenizer.

2. The device according to claim 1, characterized in that The contact area between the connecting member and the gas homogenizer is larger than a preset area, so that the heat conduction rate corresponding to the connecting member matches the heating rate of the substrate.

3. The device according to claim 1, characterized in that The connecting member includes at least one closed annular structure, the closed annular structure including: an annular support structure, a first end face and a second end face, the first end face is provided on a side of the annular support structure perpendicular to the first electrode, and the second end face is provided on a side of the annular support structure perpendicular to the gas homogenizer; The first end surface is in contact with the first electrode, and the second end surface is in contact with the gas homogenizer.

4. The device according to claim 1, characterized in that The temperature control plate and the first electrode are provided with a plurality of connection holes in an area corresponding to the outer area; The diameter of the connecting hole is greater than or equal to the diameter of the first temperature control pipeline; The first temperature control pipeline is: the temperature control pipeline of the temperature control plate extends from the connecting hole to the side of the gas homogenizer close to the first electrode, and is fitted on the side of the gas homogenizer close to the first electrode.

5. The device according to claim 1, characterized in that The orthographic projection range of the temperature control pipeline on the gas homogenizer is consistent with the fitting range of the first temperature control pipeline on the first electrode.

6. The device according to claim 1, 4 or 5, characterized in that: A heat-conducting medium is arranged in the temperature-control pipeline, and the heat-conducting medium flows in the temperature-control pipeline.

7. A temperature control method for a vapor deposition device, characterized in that: The method is based on the device according to any one of claims 1 to 6, and the method comprises: When the temperature of the gas homogenizer is greater than a preset temperature, the temperature control plate is controlled to start, so that the heat conduction rate of the first temperature control pipeline matches the heat generation rate of the substrate.

8. A computer device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the program, the method according to claim 7 is implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the method according to claim 7 is implemented.

10. A computer program product comprising instructions, characterized in that: When the instructions are executed by a processor, the method according to claim 7 is implemented.

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