Graphics correction method, storage medium and terminal

Abstract

A pattern correction method, storage medium, and terminal are disclosed. The method includes: providing a first pattern to be corrected; generating a plurality of auxiliary patterns corresponding to each of the first patterns to be corrected; performing a first optical proximity effect correction on the first pattern to be corrected to obtain a second pattern to be corrected, the second pattern to be corrected including a plurality of second patterns to be corrected; performing a first simulated exposure on the second pattern to be corrected to obtain a plurality of first simulated exposure patterns, the outlines of the plurality of first simulated exposure patterns constituting an exposure band; obtaining weak regions of the second pattern to be corrected based on the width of the exposure band at each position; obtaining target auxiliary patterns around the weak regions and correcting the target auxiliary patterns until the width of the exposure band corresponding to the weak regions meets a preset range, obtaining corrected auxiliary patterns corresponding to the target auxiliary patterns; and correcting the second pattern to be corrected based on the corrected auxiliary patterns and the auxiliary patterns to obtain a corrected pattern. The accuracy of the correction method is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a pattern correction method, a storage medium, and a terminal. Background Technology

[0002] With the development of semiconductor technology and the reduction of critical dimensions, auxiliary graphics (sbars) have become an effective means to improve resolution and process window size. The placement strategy of these auxiliary graphics is crucial for achieving optimization results.

[0003] As semiconductor technology nodes advance, the structure and environment of the entire chip become more complex and random. There are thousands of different sizes of structures in the chip's logic region. In order to ensure the maximum common process window of the entire chip, the placement strategy of auxiliary patterns needs to be further optimized to improve the optical proximity effect correction process. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a pattern correction method, storage medium, and terminal to improve the optical proximity effect correction process.

[0005] To address the aforementioned technical problems, the present invention provides a graphic correction method, comprising: providing a first pattern to be corrected, the first pattern to be corrected comprising a plurality of first graphics to be corrected; generating a plurality of auxiliary graphics corresponding to each of the first graphics to be corrected; performing a first optical proximity effect correction on the first pattern to be corrected to obtain a second pattern to be corrected, the second pattern to be corrected comprising a plurality of second graphics to be corrected corresponding to the first graphics to be corrected; performing a first simulated exposure on the second pattern to be corrected to obtain a plurality of first simulated exposure patterns, each second graphic to be corrected corresponding to a plurality of first simulated exposure patterns, the outlines of the plurality of first simulated exposure patterns constituting an exposure band; obtaining a weak region of the second graphic to be corrected based on the width of the exposure band at each position, wherein the width of the exposure band corresponding to the weak region does not meet a preset range; obtaining a target auxiliary graphic around the weak region, and correcting the target auxiliary graphic until the width of the exposure band corresponding to the weak region meets a preset range, obtaining a corrected auxiliary graphic corresponding to the target auxiliary graphic; and performing a second optical proximity effect correction on the second pattern to be corrected based on the corrected auxiliary graphic and the auxiliary graphic to obtain a corrected pattern.

[0006] Optionally, the target auxiliary graphic is corrected by: cutting the outline of the target auxiliary graphic into several line segments; obtaining several target line segments whose distance from the weak area is within a preset range; moving the several target line segments to obtain a transition auxiliary graphic; performing a second simulated exposure on the second pattern to be corrected based on the transition auxiliary graphic to obtain the exposure band corresponding to the weak area; determining whether the width of the exposure band corresponding to the weak area after the second simulated exposure meets a preset range; if the width of the exposure band corresponding to the weak area after the second simulated exposure does not meet the preset range, then continuing to move the several target line segments until the width of the exposure band corresponding to the weak area after the second simulated exposure meets the preset range, and obtaining a corrected auxiliary graphic.

[0007] Optionally, based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain the exposure band corresponding to the weak area, including: based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain a plurality of second simulated exposure patterns, each second pattern to be corrected corresponding to a plurality of second simulated exposure patterns, and the outlines of the plurality of second simulated exposure patterns constitute the exposure band.

[0008] Optionally, before moving the target line segments, the method further includes: obtaining the width of the simulated exposure band according to the preset movement trend of each target line segment; and determining the movement mode of the target line segments according to the changing trend of the simulated exposure band width relative to the width of the exposure band corresponding to the weak point area.

[0009] Optionally, the movement method of the target line segment is determined based on the changing trend of the width of the simulated exposure band relative to the width of the exposure band corresponding to the weak area, including: if the width of the simulated exposure band is greater than the width of the exposure band corresponding to the weak area, the target line segment is moved with an action opposite to the moving trend; if the width of the simulated exposure band is less than the width of the exposure band corresponding to the weak area, the target line segment is moved with the moving trend.

[0010] Optionally, the simulated exposure band width is obtained based on a preset movement trend for each target line segment, including: Wherein, PVband is the exposure band width, f is the moving distance of the i-th target line segment under the moving trend, i ranges from 1 to n, and n is the number of target line segments.

[0011] Optionally, the movement trend of the target line segment includes: moving away from the target auxiliary graphic, moving towards the target auxiliary graphic, or not moving. When not moving, f takes a value of 0. When moving away from the target auxiliary graphic and towards the target auxiliary graphic, f takes a positive value and a negative value, respectively.

[0012] Optionally, modifying the target auxiliary graphic may further include: moving several of the target line segments based on mask constraint rules.

[0013] Optionally, several target line segments with a distance from the weak area within a preset range are obtained, and the distance from the weak area within the preset range is 10 to 15 × Nyquist.

[0014] Optionally, generating a plurality of auxiliary graphics corresponding to each of the first graphics to be corrected includes: generating a plurality of auxiliary graphics around each of the first graphics to be corrected according to one or both of the rules for generating auxiliary graphics and the mask restriction rules.

[0015] Optionally, the first optical proximity effect correction is performed on the first pattern to be corrected, including: providing a correction model; performing simulated exposure on the first pattern to be corrected according to the correction model to obtain a plurality of simulated exposure patterns that correspond one-to-one with the first pattern to be corrected; obtaining the edge placement error between the outline of the simulated exposure pattern and the outline of the first pattern to be corrected; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the outline segment of the first pattern to be corrected; continuing to simulate exposure on the first pattern to be corrected after the segment is moved until the edge placement error is within the preset range, and obtaining the second pattern to be corrected.

[0016] Optionally, after simulating exposure on the first pattern to be corrected, the method further includes: determining whether there is a simulated exposure pattern corresponding to the auxiliary pattern; if there is a simulated exposure pattern corresponding to the auxiliary pattern, adjusting the size and position of the auxiliary pattern based on one or both of the mask restriction rules and the rules for generating the auxiliary pattern, until the auxiliary pattern is not exposed.

[0017] Optionally, a second optical proximity effect correction is performed on the second image to be corrected, including: providing a correction model; performing simulated exposure on the second image to be corrected according to the correction model to obtain a plurality of simulated exposure images corresponding one-to-one with the second image to be corrected; obtaining the edge placement error between the contour of the simulated exposure image and the contour of the second image to be corrected; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the contour line segment of the second image to be corrected; continuing to simulate exposure on the second image to be corrected after the line segment is moved until the edge placement error is within the preset range, and obtaining the corrected image.

[0018] Optionally, the target auxiliary graphic is the auxiliary graphic that is closest to the weak point region among the plurality of auxiliary graphics.

[0019] Optionally, the distance between the target auxiliary graphic and the weak area is within a preset range.

[0020] Optionally, the pattern correction method further includes: setting exposure conditions, the exposure conditions including incident light amount and focus position, the incident light amount having a first range and the focus position having a second range; obtaining a plurality of sets of values ​​for the incident light amount and focus position according to the first range and the second range; performing a first optical proximity effect correction on the first pattern to be corrected includes: performing a first optical proximity effect correction on the first pattern to be corrected based on the auxiliary pattern and exposure conditions; performing a first simulated exposure on the second pattern to be corrected includes: performing a first simulated exposure on the second pattern to be corrected according to a plurality of sets of values ​​for the incident light amount and focus position.

[0021] Accordingly, the present invention also provides a storage medium storing computer instructions, which execute the steps of the above method when the computer instructions are run.

[0022] Accordingly, the present invention also provides a storage terminal, including a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and the processor executes the steps of the above method when executing the computer instructions.

[0023] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0024] The technical solution of this invention, after correcting the first optical proximity effect, performs a first simulated exposure on the second pattern to be corrected, obtaining an exposure band composed of the outlines of several first simulated exposure patterns. Then, based on the width of the exposure band, the weak area of ​​the second pattern to be corrected is obtained. The target auxiliary pattern around the weak area of ​​the second pattern to be corrected is corrected until the width of the exposure band corresponding to the weak area meets a preset value range, obtaining a corrected auxiliary pattern. Finally, a corrected pattern is obtained based on the corrected auxiliary pattern and the auxiliary pattern. This correction method obtains the weak area of ​​the second pattern to be corrected based on the width of the exposure band, and then optimizes the auxiliary pattern based on the weak area. This compensates for situations where the rules for generating the auxiliary pattern are not entirely applicable to environments with various complex patterns, enabling the setting of the auxiliary pattern with less workload, optimizing the pattern correction process, and improving the accuracy of the correction results.

[0025] Furthermore, the target auxiliary graphic is the auxiliary graphic that is closest to the weak region among the plurality of auxiliary graphics. The target auxiliary graphic that is closest to the weak region has the greatest impact on the weak region. Correcting only the target auxiliary graphic that is closest to the weak region can shorten the correction time and improve computational efficiency. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the distribution of graphics in one embodiment;

[0027] Figure 2 This is a schematic diagram of the distribution of graphics in one embodiment;

[0028] Figure 3 This is a schematic diagram of the distribution of graphics in one embodiment;

[0029] Figure 4 and Figure 11 This is a flowchart illustrating the graphic correction method in an embodiment of the present invention;

[0030] Figures 5 to 10 This is a schematic diagram of the graphic correction process in an embodiment of the present invention. Detailed Implementation

[0031] As described in the background section, the placement strategy for auxiliary graphics needs further optimization. This will now be analyzed and explained in conjunction with specific embodiments.

[0032] Figure 1 This is a schematic diagram of the distribution of graphics in one embodiment; Figure 2 This is a schematic diagram of the distribution of graphics in one embodiment; Figure 3 This is a schematic diagram of the distribution of graphics in one embodiment.

[0033] When generating auxiliary graphics around the main graphic, it's necessary to follow the rules for generating auxiliary graphics to ensure that while optimizing the exposure of the main graphic, the auxiliary graphics themselves are not overexposed. Typically, the rules for generating auxiliary graphics need to be obtained through extensive testing with test graphics, which are usually as follows: Figure 1 The above, Figure 1 The test graphics 101 in the diagram are basically similar in shape, and the spacing between the graphics is basically the same. The environment around the main graphics 101 is relatively simple. However, in reality, the layout that requires the addition of auxiliary graphics is as follows: Figure 2 As shown, there are main graphics 102 with different shapes, sizes, and spacings. Figure 2 The environment surrounding the main graphic 102 is relatively complex, and the generation rules for the auxiliary graphics trained from the test graphic 101 cannot be fully applied. Figure 2 This limitation on adding auxiliary graphics is imposed on each main graphic 102, as it cannot guarantee that every area surrounding the main graphic 102 can be added as an auxiliary graphic. Furthermore, in the new design, it's impossible to manually optimize the auxiliary graphics for each local area, as this would require significant time and technical expertise. Additionally, the optimized rules for generating auxiliary graphics may still be unsuitable for other unknown layouts.

[0034] The exposure band (Process Variation Band, or PV band) is an important indicator for evaluating the process window in OPC (Optical Process Control) technology. The formation process of the exposure band includes: within a certain range of exposure conditions, including incident light dose and focus position, setting several different values ​​for incident light dose and focus position; simulating exposure on the pattern to be corrected using these different values, obtaining several sets of simulated exposure patterns; and combining the overlapping outlines of several sets of simulated exposure patterns at the same location to form the exposure band. A narrower exposure band indicates a more stable exposure process under the given exposure conditions. A wider range of exposure conditions and a narrower exposure band indicate more ideal process conditions and a larger process window.

[0035] A well-designed auxiliary pattern generation rule can significantly reduce the width of the exposure band and increase the process window. Conversely, an inappropriate auxiliary pattern generation rule often results in a larger exposure band in local areas of the main pattern; these areas are weak points and are prone to breakpoints during actual exposure. Figure 3 As shown, several auxiliary graphics 104 are distributed around the main graphic 103, and several exposure graphics constitute an exposure band 105. The exposure band 105 in some areas is relatively wide and is a weak area A.

[0036] For this reason, the rules for generating auxiliary graphics usually need to be optimized again for new layouts. However, optimization is often cumbersome and time-consuming, and may still not be suitable for other unknown layouts.

[0037] To address the aforementioned problems, the present invention provides a pattern correction method, storage medium, and terminal. After correcting for the first optical proximity effect, a first simulated exposure is performed on the second pattern to be corrected, obtaining an exposure band formed by the outlines of several first simulated exposure patterns. Then, based on the width of the exposure band, the weak areas of the second pattern to be corrected are identified. Target auxiliary patterns surrounding the weak areas of the second pattern to be corrected are corrected until the width of the exposure band corresponding to the weak areas meets a preset value range. Corrected auxiliary patterns are then obtained, and a corrected pattern is obtained based on the corrected auxiliary patterns and the auxiliary patterns. This correction method identifies the weak areas of the second pattern to be corrected based on the width of the exposure band, and then optimizes the auxiliary patterns based on the weak areas. This compensates for situations where the rules for generating auxiliary patterns are not entirely applicable to environments with various complex patterns. It can complete the setting of auxiliary patterns with less workload, optimizes the pattern correction process, and improves the accuracy of the correction results.

[0038] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0039] Figure 4 and Figure 11 This is a flowchart illustrating the graphic correction method in an embodiment of the present invention; Figures 5 to 10 This is a schematic diagram of the graphic correction process in an embodiment of the present invention.

[0040] Please refer to Figure 4 The graphic correction method includes:

[0041] Step S10: Provide a first layout to be corrected, the first layout to be corrected including a plurality of first graphics to be corrected;

[0042] Step S20: Generate several auxiliary graphics corresponding to each of the first graphics to be corrected;

[0043] Step S30: Perform a first optical proximity effect correction on the first pattern to be corrected to obtain a second pattern to be corrected, wherein the second pattern to be corrected includes a plurality of second patterns to be corrected corresponding to the first pattern to be corrected;

[0044] Step S40: Perform a first simulated exposure on the second pattern to be corrected to obtain a plurality of first simulated exposure patterns. Each second pattern to be corrected corresponds to a plurality of first simulated exposure patterns, and the outlines of the plurality of first simulated exposure patterns constitute an exposure band.

[0045] Step S50: Based on the width of the exposure band at each position, obtain the weak area of ​​the second pattern to be corrected, where the width of the exposure band corresponding to the weak area does not meet the preset range.

[0046] Step S60: Obtain the target auxiliary pattern around the weak area, and correct the target auxiliary pattern until the width of the exposure band corresponding to the weak area meets the preset range, and obtain the corrected auxiliary pattern corresponding to the target auxiliary pattern;

[0047] Step S70: Based on the correction auxiliary pattern and the auxiliary pattern, perform a second optical proximity effect correction on the second pattern to be corrected to obtain the corrected pattern.

[0048] The image correction method, after correcting for the first optical proximity effect, performs a first simulated exposure on the second image to be corrected, obtaining an exposure band formed by the outlines of several first simulated exposure images. Then, based on the width of the exposure band, it identifies the weak areas of the second image to be corrected. The method then corrects the target auxiliary images surrounding these weak areas until the width of the exposure band corresponding to the weak areas meets a preset value range, obtaining corrected auxiliary images. Finally, it obtains the corrected image based on the corrected auxiliary images and the auxiliary images. This correction method identifies the weak areas of the second image to be corrected based on the width of the exposure band, and then optimizes the auxiliary images based on these weak areas. This compensates for situations where the rules for generating auxiliary images are not entirely applicable to environments with various complex images. It allows for the setting of auxiliary images with less workload, optimizes the image correction process, and improves the accuracy of the correction results.

[0049] Please combine Figure 5 Continue to refer Figure 4 Step S10: Provide a first layout to be corrected, the first layout to be corrected including a plurality of first graphics to be corrected 201.

[0050] The first pattern to be corrected is the design pattern of the photomask. After correction, the corrected pattern is exposed onto the photoresist so that the pattern on the photoresist matches the design pattern. Figure 1 To.

[0051] Please combine Figure 5 Continue to refer Figure 4 Step S20: Generate a plurality of auxiliary graphics 202 corresponding to each of the first graphics to be corrected 201.

[0052] In this embodiment, based on one or both of the rules for generating auxiliary graphics and the mask constraint rules, a plurality of auxiliary graphics 202 corresponding to each of the first graphics to be corrected 201 are generated around each first graphics to be corrected. That is, when generating a plurality of auxiliary graphics 202 based on the rules for generating auxiliary graphics, the generated auxiliary graphics 202 also need to satisfy the mask constraint rules.

[0053] The rules for generating auxiliary graphics are obtained by testing several test graphics a number of times.

[0054] The mask rule constraints (MRCs) include: (1) specifying the minimum line width and minimum space of the graphic; minimum values ​​may also be set for the line width and minimum space of the auxiliary graphic (Bar). (2) specifying the minimum value for the corner-to-corner spacing of the graphic; minimum values ​​may also be set for the distance between the auxiliary graphic and the main graphic. (3) setting a minimum area for the auxiliary graphic.

[0055] Please combine Figure 6 Continue to refer Figure 4 Step S30: Perform a first optical proximity effect correction on the first pattern to be corrected to obtain a second pattern to be corrected. The second pattern to be corrected includes a plurality of second patterns to be corrected 203 corresponding to the first pattern to be corrected 201.

[0056] In this embodiment, the correction method further includes setting exposure conditions, the exposure conditions including incident light amount and focus position, the incident light amount having a first range and the focus position having a second range.

[0057] The exposure conditions include incident light amount (dose) and focus position (focus), and the first and second ranges are set according to the actual process requirements. During the correction process, the exposure conditions are usually set in the correction model.

[0058] Performing a first optical proximity effect correction on the first pattern to be corrected to obtain a second pattern to be corrected includes: performing a first optical proximity effect correction on the first pattern to be corrected based on the auxiliary pattern and exposure conditions.

[0059] The first optical proximity effect correction is performed on the first pattern to be corrected, including: providing a correction model; performing simulated exposure on the first pattern to be corrected according to the correction model to obtain a plurality of simulated exposure patterns (not shown) that correspond one-to-one with the first pattern to be corrected 201; obtaining the edge placement error (EPE) between the contour of the simulated exposure pattern and the contour of the first pattern to be corrected 201; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the contour line segment of the first pattern to be corrected; continuing to simulate exposure on the first pattern to be corrected after moving the line segment until the edge placement error is within the preset range, and obtaining the second pattern to be corrected.

[0060] In this embodiment, after simulating exposure of the first pattern to be corrected, the method further includes: determining whether there is a simulated exposure pattern corresponding to the auxiliary pattern 202; if there is a simulated exposure pattern corresponding to the auxiliary pattern 202, then adjusting the size and position of the auxiliary pattern 202 based on one or both of the mask restriction rules and the rules for generating the auxiliary pattern, until the auxiliary pattern 202 will not be exposed.

[0061] Please combine Figure 7 Continue to refer Figure 4 Step S40: Perform a first simulated exposure on the second pattern to be corrected to obtain a number of first simulated exposure patterns. Each second pattern to be corrected 203 corresponds to a number of first simulated exposure patterns. The outlines of the number of first simulated exposure patterns constitute an exposure band (Process variety band, abbreviated as PV band) 204.

[0062] In this embodiment, the correction method further includes: obtaining several sets of values ​​for the incident light amount and the focusing position based on the first range and the second range.

[0063] That is, the incident light dose is exhaustively selected within a first range, and the focus position is exhaustively selected within a second range. The values ​​of incident light dose and focus position are combined into several sets of incident light dose and focus position values.

[0064] The second image to be corrected undergoes a first simulated exposure to obtain several first simulated exposure images. This includes: performing a first simulated exposure on the second image to be corrected based on several sets of incident light amount and focus position values ​​to obtain several first simulated exposure images. That is, one first simulated exposure image corresponds to one set of incident light amount and focus position values.

[0065] Please combine Figure 7 Continue to refer Figure 4 Step S50: Based on the width of the exposure band 204 at each position, obtain the weak area B of the second pattern to be corrected 203, where the width of the exposure band 204 corresponding to the weak area B does not meet the preset range.

[0066] The smaller the width of the exposure band 204, the more stable the exposure process and the better the image correction effect under this exposure condition. Therefore, in this embodiment, the width of the exposure band 204 corresponding to the weak area B does not meet the preset range, that is, it is the area where the width of the exposure band 204 is greater than the preset value. The auxiliary image needs to be optimized to make the exposure process in this area stable.

[0067] Please combine Figure 8 Continue to refer Figure 4 Step S60: Obtain the target auxiliary graphic 205 around the weak area B.

[0068] In this embodiment, the target auxiliary graphic 205 is closest to the weak region B. The target auxiliary graphic 205 closest to the weak region B has the greatest impact on the weak region B. Correcting only the target auxiliary graphic 205 closest to the weak region B can shorten the correction time and improve computational efficiency.

[0069] In other embodiments, the distance between the target auxiliary graphic and the weak area is within a preset range. That is, all target auxiliary graphics within the preset range are corrected.

[0070] Please combine Figure 9 and Figure 10 Continue to refer Figure 4 , Figure 9 This is an enlarged schematic diagram of the target auxiliary graphic 205. Figure 10 For Figure 9 Based on the schematic diagram, continue to execute step S60: correct the target auxiliary pattern 205 until the width of the exposure band 204 corresponding to the weak area B meets the preset range, and obtain the corrected auxiliary pattern 207 corresponding to the target auxiliary pattern 205.

[0071] Please combine Figure 9 and Figure 10 refer to Figure 11 The target auxiliary graphic 205 is corrected, including:

[0072] Step S901: Cut the outline of the target auxiliary graphic 205 into several line segments 206;

[0073] Step S902: Obtain several target line segments 206 whose distance from the weak area B is within a preset range;

[0074] Step S903: Move several of the target line segments 206 to obtain transition auxiliary graphics;

[0075] Step S904: Based on the transition auxiliary graphic, perform a second simulated exposure on the second pattern to be corrected to obtain the exposure band corresponding to the weak area B;

[0076] Step S905: Determine whether the width of the exposure band corresponding to the weak area B after the second simulated exposure meets the preset range;

[0077] Step S906: If the width of the exposure band corresponding to the weak area B after the second simulated exposure does not meet the preset range, then continue to move several target line segments until the width of the exposure band corresponding to the weak area after the second simulated exposure meets the preset range, and obtain the correction auxiliary graphic 207.

[0078] In this embodiment, the width of the exposure band corresponding to the weak region B does not meet the preset range, that is, the width of the exposure band corresponding to the weak region B is greater than the preset value; the width of the exposure band corresponding to the weak region meets the preset range, that is, the width of the exposure band corresponding to the weak region B is less than or equal to the preset value.

[0079] In this embodiment, several target line segments 206 with a distance from the weak point region B within a preset range are obtained. The preset range is... Figure 8 and Figure 9 Region C is shown in the diagram.

[0080] The distance between the target line segment and the weak region B is within a preset range, which is 10 to 15 × Nyquist. Several target line segments 206 within the Nyquist curve range are selected. These target line segments 206 have the greatest impact on the weak region B. Only the target line segments 206 closest to the weak region B are corrected, which can shorten the correction time and improve the calculation efficiency.

[0081] In this embodiment, based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain the exposure band corresponding to the weak region B. This includes: based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain a plurality of second simulated exposure patterns, each second pattern to be corrected corresponding to a plurality of second simulated exposure patterns, and the outlines of the plurality of second simulated exposure patterns constitute the exposure band.

[0082] In this embodiment, the second simulated exposure is performed on the second pattern to be corrected to obtain a plurality of second simulated exposure patterns. The method further includes: based on the transition auxiliary pattern and a plurality of sets of incident light amount and focus position values, the second simulated exposure is performed on the second pattern to be corrected to obtain a plurality of second simulated exposure patterns, wherein the outlines of the plurality of second simulated exposure patterns constitute an exposure band.

[0083] In this embodiment, before moving the plurality of target line segments 206, the method further includes: obtaining the simulated exposure band width according to the preset movement trend of each target line segment 206; and determining the movement mode of the target line segment 206 according to the changing trend of the simulated exposure band width relative to the width of the exposure band corresponding to the weak point region B.

[0084] In this embodiment, the movement mode of the target line segment 206 is determined based on the changing trend of the simulated exposure band width relative to the width of the exposure band corresponding to the weak area B. This includes: if the simulated exposure band width is greater than the width of the exposure band corresponding to the weak area B, then the target line segment 206 is moved in the opposite direction to the moving trend; if the simulated exposure band width is less than the width of the exposure band corresponding to the weak area, then the target line segment 206 is moved in accordance with the moving trend.

[0085] In this embodiment, the simulated exposure band width is obtained based on the preset movement trend of each target line segment 206, including: Wherein, PVband is the exposure band width, f is the moving distance of the i-th target line segment 206 under the moving trend, i ranges from 1 to n, and n is the number of target line segments 206.

[0086] In this embodiment, the movement trend of the target line segment 206 includes: moving in a direction away from the target auxiliary graphic 205, moving in a direction toward the target auxiliary graphic 205, or not moving. When not moving, f takes a value of 0. When moving in a direction away from the target auxiliary graphic 205 and in a direction toward the target auxiliary graphic 205, f takes a positive value and a negative value, respectively.

[0087] It should be noted that the described trend is not an actual movement of the target line segment.

[0088] In this embodiment, modifying the target auxiliary graphic 205 further includes moving several target line segments 206 based on mask constraint rules. That is, the movement of the target line segments 206 also needs to satisfy the mask constraint rules.

[0089] Please continue to refer to Figure 4 Step S70: Based on the correction auxiliary pattern 207 and auxiliary pattern 202, perform a second optical proximity effect correction on the second pattern to be corrected to obtain a corrected pattern.

[0090] The second optical proximity effect correction for the second image to be corrected includes: providing a correction model; performing simulated exposure on the second image to be corrected according to the correction model to obtain a plurality of simulated exposure images corresponding one-to-one with the second image to be corrected; obtaining the edge placement error between the contour of the simulated exposure image and the contour of the second image to be corrected; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the contour line segment of the second image to be corrected; continuing to simulate exposure on the second image to be corrected after the line segment is moved until the edge placement error is within the preset range, and obtaining the corrected image.

[0091] Thus, the corrected pattern obtained by the aforementioned pattern correction method comprehensively considers the influence of factors such as exposure band (PV band), mask constraint rule (MRC), edge placement error (EPE), and the exposure (printing) of auxiliary patterns on pattern correction, resulting in higher accuracy and improved efficiency of the pattern correction results.

[0092] It should be noted that the Mask Restriction Rule (MRC) is applied throughout the entire graphic correction process.

[0093] Accordingly, embodiments of the present invention also provide a storage medium storing computer instructions thereon, the computer instructions being executed. Figure 4 and Figure 11 The steps of any of the methods described.

[0094] Accordingly, embodiments of the present invention also provide a storage terminal, including a memory and a processor, wherein the memory stores computer instructions that can be executed on the processor, and the processor executes the computer instructions. Figure 4 and Figure 11 The steps of any of the methods described.

[0095] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

[0096] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method for correcting graphics, characterized in that, include: A first layout to be corrected is provided, which includes a plurality of first graphics to be corrected; Generate several auxiliary graphics corresponding to each of the first graphics to be corrected; The first optical proximity effect correction is performed on the first pattern to be corrected to obtain a second pattern to be corrected, the second pattern to be corrected including a plurality of second patterns to be corrected corresponding to the first pattern to be corrected; The second pattern to be corrected is subjected to a first simulated exposure to obtain several first simulated exposure patterns. Each second pattern to be corrected corresponds to several first simulated exposure patterns, and the outlines of several first simulated exposure patterns constitute an exposure band. Based on the width of the exposure band at each position, the weak area of ​​the second image to be corrected is obtained, and the width of the exposure band corresponding to the weak area does not meet the preset range. Obtain the target auxiliary graphic around the weak area, and correct the target auxiliary graphic until the width of the exposure band corresponding to the weak area meets the preset range, and obtain the corrected auxiliary graphic corresponding to the target auxiliary graphic; Based on the correction auxiliary pattern and the auxiliary pattern, the second optical proximity effect correction is performed on the second pattern to be corrected to obtain the corrected pattern.

2. The graphic correction method as described in claim 1, characterized in that, The correction of the target auxiliary graphic includes: cutting the outline of the target auxiliary graphic into several line segments; obtaining several target line segments whose distance from the weak area is within a preset range; moving the several target line segments to obtain a transition auxiliary graphic; performing a second simulated exposure on the second pattern to be corrected based on the transition auxiliary graphic to obtain the exposure band corresponding to the weak area; determining whether the width of the exposure band corresponding to the weak area after the second simulated exposure meets a preset range; if the width of the exposure band corresponding to the weak area after the second simulated exposure does not meet the preset range, then continuing to move the several target line segments until the width of the exposure band corresponding to the weak area after the second simulated exposure meets the preset range, and obtaining the correction auxiliary graphic.

3. The graphic correction method as described in claim 2, characterized in that, Based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain the exposure band corresponding to the weak area, including: based on the transition auxiliary graphic, a second simulated exposure is performed on the second pattern to be corrected to obtain a plurality of second simulated exposure patterns, each second pattern to be corrected corresponding to a plurality of second simulated exposure patterns, and the outlines of the plurality of second simulated exposure patterns constitute the exposure band.

4. The graphic correction method as described in claim 2, characterized in that, Before moving the target line segments, the method further includes: obtaining the simulated exposure band width according to the preset movement trend of each target line segment; and determining the movement mode of the target line segments according to the changing trend of the simulated exposure band width relative to the width of the exposure band corresponding to the weak point area.

5. The graphic correction method as described in claim 4, characterized in that, Based on the changing trend of the simulated exposure band width relative to the exposure band width corresponding to the weak area, the movement method of the target line segment is determined, including: if the simulated exposure band width is greater than the exposure band width corresponding to the weak area, the target line segment is moved in the opposite direction to the movement trend; if the simulated exposure band width is less than the exposure band width corresponding to the weak area, the target line segment is moved in accordance with the movement trend.

6. The graphic correction method as described in claim 4, characterized in that, The simulated exposure band width is obtained based on the preset movement trend of each target line segment, including: Where PVband is the exposure band width, f is the moving distance of the i-th target line segment under the moving trend, i ranges from 1 to n, and n is the number of target line segments.

7. The graphic correction method as described in claim 6, characterized in that, The movement trend of the target line segment includes: moving away from the target auxiliary graphic, moving towards the target auxiliary graphic, or not moving. When not moving, f takes a value of 0. When moving away from the target auxiliary graphic and moving towards the target auxiliary graphic, f takes a positive value and a negative value, respectively.

8. The graphic correction method as described in claim 2, characterized in that, Obtain several target line segments whose distance from the weak area is within a preset range, and the preset distance from the weak area is 10~15×Nyquist.

9. The graphic correction method as described in claim 2, characterized in that, The modification of the target auxiliary graphic also includes: moving several of the target line segments based on mask constraint rules.

10. The graphic correction method as described in claim 1, characterized in that, The generation of several auxiliary graphics corresponding to each of the first graphics to be corrected includes: generating several auxiliary graphics around each of the first graphics to be corrected according to one or two of the rules for generating auxiliary graphics and the mask restriction rules.

11. The graphic correction method as described in claim 10, characterized in that, The first optical proximity effect correction for the first pattern to be corrected includes: providing a correction model; performing simulated exposure on the first pattern to be corrected according to the correction model to obtain a plurality of simulated exposure patterns that correspond one-to-one with the first pattern to be corrected; obtaining the edge placement error between the outline of the simulated exposure pattern and the outline of the first pattern to be corrected; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the outline segment of the first pattern to be corrected; continuing to simulate exposure on the first pattern to be corrected after the segment is moved until the edge placement error is within the preset range, and obtaining the second pattern to be corrected.

12. The graphic correction method as described in claim 11, characterized in that, After simulating exposure on the first pattern to be corrected, the method further includes: determining whether there is a simulated exposure pattern corresponding to the auxiliary pattern; if there is a simulated exposure pattern corresponding to the auxiliary pattern, adjusting the size and position of the auxiliary pattern based on one or both of the mask restriction rules and the rules for generating the auxiliary pattern, until the auxiliary pattern is not exposed.

13. The graphic correction method as described in claim 1, characterized in that, The second optical proximity effect correction for the second image to be corrected includes: providing a correction model; performing simulated exposure on the second image to be corrected according to the correction model to obtain a plurality of simulated exposure images corresponding one-to-one with the second image to be corrected; obtaining the edge placement error between the contour of the simulated exposure image and the contour of the second image to be corrected; determining whether the edge placement error is within a preset range; if the edge placement error is not within the preset range, moving the contour line segment of the second image to be corrected; continuing to simulate exposure on the second image to be corrected after the line segment is moved until the edge placement error is within the preset range, and obtaining the corrected image.

14. The graphic correction method as described in claim 1, characterized in that, The target auxiliary graphic is the auxiliary graphic that is closest to the weak point region among the plurality of auxiliary graphics.

15. The graphic correction method as described in claim 1, characterized in that, The distance between the target auxiliary graphic and the weak area is within a preset range.

16. The graphic correction method as described in claim 1, characterized in that, The graphic correction method further includes: The exposure conditions are set, including incident light amount and focus position, wherein the incident light amount has a first range and the focus position has a second range; Several sets of values ​​for incident light intensity and focusing position are obtained based on the first range and the second range; Performing a first optical proximity effect correction on the first pattern to be corrected includes: performing a first optical proximity effect correction on the first pattern to be corrected based on the auxiliary pattern and exposure conditions; Performing a first simulated exposure on the second pattern to be corrected includes: performing a first simulated exposure on the second pattern to be corrected based on several sets of values ​​for incident light amount and focus position.

17. A storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed, they perform the steps of the method according to any one of claims 1 to 16.

18. A storage terminal, comprising a memory and a processor, wherein the memory stores computer instructions executable on the processor, characterized in that, When the processor executes the computer instructions, it performs the steps of the method according to any one of claims 1 to 16.

Images