A magnetically confined DC glow discharge plasma device and bonding equipment

Abstract

The present invention discloses a magnetically confined DC glow discharge plasma device and bonding equipment, the magnetically confined DC glow discharge plasma device comprises: a cathode plate having a receiving cavity, at least two anode rods being located in the receiving cavity, at least two anode rods and the cathode plate being used to generate a bias electric field under an applied voltage; the cathode plate comprising a first cathode plate; the first cathode plate having an emission hole; a first permanent magnet and a second permanent magnet being located outside the receiving cavity, the first permanent magnet and the second permanent magnet being located on both sides of the cathode plate along a first direction, and the first permanent magnet and the second permanent magnet being arranged in the area between the anode rod and the first cathode plate; the first permanent magnet and the second permanent magnet being used to confine the plasma in the receiving cavity to the area between the at least two anode rods and the first cathode plate. The present invention can avoid introducing impurity elements into the receiving cavity, reduce ion etching of the cathode plate, and prevent contamination of the wafer bonding surface caused by leakage of carbon atom particles in the receiving cavity.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, in particular to a magnetically confined direct current glow discharge plasma device and bonding equipment. Background Art

[0002] Semiconductor wafers can be bonded at room temperature by atomic beam irradiation to achieve surface activation. Irradiating the bonding surface with an atomic beam can remove surface contamination and oxide layers, produce a clean surface and suspended chemical bonds to achieve surface activation, and the activated wafer can be bonded at room temperature by lamination and pressurization.

[0003] At present, the traditional magnetically confined DC glow discharge plasma device uses a magnetic yoke to introduce a magnetic field into the gas discharge chamber. However, the magnetic yoke entering the gas discharge chamber will introduce new impurity elements, and there is a gap where the magnetic yoke penetrates the wall of the gas discharge chamber, causing the particles in the gas discharge chamber to leak. The leaked particles will contaminate the wafer bonding surface. In addition, in the process of using an atomic beam source to irradiate the surface of the wafer, these particles are generated by the combination of carbon atoms generated by ion collision with the cathode plate, and continue to accumulate in the gas discharge chamber. The leaked particles will fall on the surface of the wafer and cause contamination. Summary of the invention

[0004] The present invention provides a magnetically confined DC glow discharge plasma device and bonding equipment, which can avoid the introduction of impurity elements into a receiving cavity, reduce the etching of a cathode plate by plasma, and prevent the leakage of carbon atom particles in the receiving cavity from causing contamination of a wafer bonding surface.

[0005] In a first aspect, an embodiment of the present invention provides a magnetically confined DC glow discharge plasma device, comprising:

[0006] a cathode plate, at least two anode rods, a first permanent magnet and a second permanent magnet;

[0007] The cathode plate has a receiving cavity, at least two anode rods are located in the receiving cavity, and at least two anode rods are arranged along a first direction; at least two anode rods and the cathode plate are used to generate a bias electric field under an external voltage; the cathode plate includes a first cathode plate; the first cathode plate has an emission hole; wherein the first direction is perpendicular to the extension direction of the anode rods, and the first direction is parallel to the first cathode plate;

[0008] The first permanent magnet and the second permanent magnet are located outside the containing cavity, the first permanent magnet and the second permanent magnet are located on both sides of the cathode plate along the first direction, and the first permanent magnet and the second permanent magnet are arranged in the area between the anode rod and the first cathode plate; the first permanent magnet and the second permanent magnet are used to confine the plasma in the containing cavity to the area between at least two anode rods and the first cathode plate.

[0009] Optionally, the cathode plate further includes a second cathode plate, a third cathode plate, a fourth cathode plate, a fifth cathode plate and a sixth cathode plate;

[0010] The second cathode plate and the third cathode plate are arranged opposite to each other along the first direction; the fifth cathode plate and the sixth cathode plate are arranged opposite to each other along the second direction; the first cathode plate and the fourth cathode plate are arranged opposite to each other along the third direction; the first direction, the second direction and the third direction are perpendicular to each other;

[0011] The first permanent magnet is disposed adjacent to the second cathode plate, the second permanent magnet is disposed adjacent to the third cathode plate, the second cathode plate and the third cathode plate are parallel to each other, and the first permanent magnet and the second permanent magnet are disposed symmetrically relative to the cathode plate.

[0012] Optionally, the first permanent magnet and the second cathode plate are spaced apart by a first preset size; the second permanent magnet and the third cathode plate are spaced apart by a first preset size, wherein the first preset size is greater than zero and less than a preset value.

[0013] Optionally, the first preset size is less than or equal to 30 mm.

[0014] Optionally, the size of the first permanent magnet and the second permanent magnet along the second direction is greater than or equal to the length of the region where the emission hole on the first cathode plate is located along the second direction.

[0015] Optionally, the magnetization intensity direction of the first permanent magnet is the same as the magnetization intensity direction of the second permanent magnet.

[0016] Optionally, the magnetization intensity of the first permanent magnet and the magnetization intensity of the second permanent magnet are greater than or equal to 0.3T and less than or equal to 1.5T.

[0017] Optionally, the magnetically confined DC glow discharge plasma apparatus further comprises:

[0018] A power supply, the power supply is located outside the accommodating cavity, the negative electrode of the power supply is electrically connected to the cathode plate; the positive electrode of the power supply is electrically connected to the anode rod; the power supply is used to apply voltage to the anode rod;

[0019] The voltage applied by the power supply to the anode rod is greater than or equal to 300V and less than or equal to 3000V.

[0020] Optionally, at least two through holes are provided on the fifth cathode plate and the sixth cathode plate;

[0021] The through holes of the fifth cathode plate are arranged in one-to-one correspondence with the through holes of the sixth cathode plate; the diameter of the through holes is larger than the diameter of the anode rod; the anode rod passes through the through holes;

[0022] The diameter of the anode rod is greater than or equal to 1 mm and less than or equal to 20 mm.

[0023] According to another aspect of the present invention, there is provided a bonding device, comprising the magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention.

[0024] In the technical solution provided by the embodiment of the present invention, the cathode plate has a accommodating cavity, at least two anode rods are located in the accommodating cavity, and at least two anode rods are arranged along a first direction; at least two anode rods and the cathode plate are used to generate a bias electric field under an applied voltage; the cathode plate includes a first cathode plate; voltage is applied to at least two anode rods to ionize gas molecules in the accommodating cavity, the first permanent magnet and the second permanent magnet are located outside the accommodating cavity, and the magnetic field passes through the cathode plate and enters the accommodating cavity, and there is no need to introduce the magnetic field into the accommodating cavity through a magnetic yoke, thereby avoiding impurity elements from entering the accommodating cavity under the bias voltage, and at the same time reducing the leakage of carbon atom particles in the accommodating cavity from the gap to pollute the wafer bonding surface, and the first permanent magnet and the second permanent magnet are located on both sides of the cathode plate along the first direction, confining the plasma in the accommodating cavity to the area between the at least two anode rods and the first cathode plate, and more electrons are distributed in the area between the first cathode plate and the anode rod, thereby reducing the collision of plasma with the cathode plate, reducing the etching of the cathode plate and the pollution of the wafer surface.

[0025] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 is a front view of a magnetically confined DC glow discharge plasma device;

[0028] Figure 2 It is a top view of a magnetically confined DC glow discharge plasma device;

[0029] Figure 3 It is a structural schematic diagram of a magnetically confined DC glow discharge plasma device provided by an embodiment of the present invention;

[0030] Figure 4 It is a structural cross-sectional view of a magnetically confined DC glow discharge plasma device along the A1-A2 direction provided by an embodiment of the present invention;

[0031] Figure 5This is a magnetic field distribution diagram in a magnetically confined DC glow discharge plasma device provided by an embodiment of the present invention;

[0032] Figure 6 It is a simulation diagram of the relationship between the plasma concentration on the cathode plate and the cathode plate length provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0034] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] Figure 1 This is a front view of a magnetically confined DC glow discharge plasma device. Figure 2 A top view of a magnetically confined DC glow discharge plasma device. Figure 1-Figure 2 A magnetically confined DC glow discharge plasma apparatus is shown in FIG. Figure 1 and Figure 2The magnetically confined DC glow discharge plasma device is composed of a double anode rod 2 and a cathode plate 1. A magnet 9 is arranged outside a gas discharge chamber 16, and a magnetic field is introduced into the gas discharge chamber 16 through a magnetic yoke 17. After an inert gas such as argon, neon or xenon is fed into the gas discharge chamber 16, a high voltage electric field is applied between the cathode plate 1 and the anode rod 2 to achieve ionization of gas molecules. Electrons drift laterally under the action of orthogonal electric and magnetic fields in the direction of E×B. On both sides of the central anode rod 2, the electric and magnetic fields are opposite, so the electrons drift downward, and the ions generated by the collision are also gathered on the lower side and emitted from the emission hole under the drive of the electric field, and irradiated on the wafer. However, this method of coupling the magnetic field generated by the magnet into the gas discharge chamber 16 through the magnetic yoke 17 will introduce new impurity elements into the gas discharge chamber 16, and there is a gap where the magnetic yoke penetrates the wall of the gas discharge chamber 16, which causes the particles in the gas discharge chamber 16 to leak. The leaked particles will contaminate the wafer bonding surface. In addition, in the process of irradiating the surface of the wafer with an atomic beam source, these particles are generated by the combination of carbon atoms generated by ion collision with the cathode plate, and continue to accumulate in the gas discharge chamber 16. The leaked particles will fall on the surface of the wafer and cause contamination.

[0036] To solve the above technical problems, the embodiments of the present invention provide the following technical solutions:

[0037] Figure 3 It is a structural schematic diagram of a magnetically confined DC glow discharge plasma device provided in an embodiment of the present invention. Figure 3 A magnetically confined DC glow discharge plasma apparatus without a third cathode plate is shown. Figure 4 1 is a structural cross-sectional view of a magnetically confined DC glow discharge plasma device along the A1-A2 direction provided by an embodiment of the present invention. Figure 3 and Figure 4 The magnetically confined DC glow discharge plasma device comprises: a cathode plate 1, at least two anode rods 2, a first permanent magnet 3 and a second permanent magnet 4; the cathode plate 1 has a receiving cavity 6, at least two anode rods 2 are located in the receiving cavity 6, and at least two anode rods 2 are arranged along a first direction X; at least two anode rods 2 and the cathode plate 1 are used to generate a bias electric field under an external voltage; the cathode plate 1 comprises a first cathode plate 10; the first cathode plate 10 has an emission hole 5; wherein the first direction X is perpendicular to the extension direction of the anode rod 2, and the first direction X is parallel to the first cathode plate 10; the first permanent magnet 3 and the second permanent magnet 4 are located outside the receiving cavity 6, the first permanent magnet 3 and the second permanent magnet 4 are located on both sides of the cathode plate 1 along the first direction X, and the first permanent magnet 3 and the second permanent magnet 4 are arranged in the area between the anode rod 2 and the first cathode plate 10; the first permanent magnet 3 and the second permanent magnet 4 are used to confine the plasma in the receiving cavity 6 to the area between the at least two anode rods 2 and the first cathode plate 10.

[0038] The first direction X is perpendicular to the extension direction of the anode rod 2. At least two anode rods 2 are arranged along the first direction X. The cathode plate 1 and the at least two anode rods 2 are made of graphite. The bias electric field generated by the cathode plate 1 and the at least two anode rods 2 under an applied voltage is used to ionize gas molecules into plasma and electrons, and also to provide kinetic energy for plasma emission. The first permanent magnet 3 and the second permanent magnet 4 are used to generate a local magnetic field, and the local magnetic field is used to distribute electrons in the area between the anode rod 2 and the first cathode plate 10.

[0039] Specifically, when an external voltage is applied to at least two anode rods 2, a bias electric field is generated between the anode rod 2 and the cathode plate 1. Under the local magnetic field generated by the first permanent magnet 3 and the second permanent magnet 4, most of the electrons in the accommodating cavity 6 are confined in the area between the anode rod 2 and the first cathode plate 10. Most of the electrons are subjected to the electric field and the magnetic field in the area between the anode rod 2 and the first cathode plate 10. Under the action of the composite field, the electrons perform a cyclotron motion around the magnetic field line and obtain a longer motion distance. The electrons collide with more gas molecules, and collision ionization generates plasma and new electrons. More electrons continue to perform a cyclotron motion and collide with gas molecules, thereby generating more plasma. Most of the plasma is concentrated in the area between the anode rod 2 and the first cathode plate 10, and is ejected from the emission hole 5 under the action of the bias electric field. In the process of accelerating the ejection, the plasma will also combine with the electrons to generate atoms, which are emitted in the form of atoms. Among them, the gas molecules include but are not limited to argon, neon and xenon.

[0040] Figure 5 is a magnetically confined DC glow discharge plasma device provided by an embodiment of the present invention, for example, see Figure 5 , purple represents plasma, blue wavy lines indicate the trajectory of electrons, under the local magnetic field generated by the first permanent magnet 3 and the second permanent magnet 4, electrons are confined to the area between the anode rod 2 and the first cathode plate 10, and electrons make a loop motion around the magnetic field lines under the action of the electric field and the magnetic field, more electrons collide with gas molecules to generate more plasma and electrons, and the plasma is confined to the area between the anode rod 2 and the first cathode plate 10. Collision with the cathode plate 1 is avoided, the generation of carbon atom particles is reduced, and the contamination of the bonding surface of the semiconductor wafer is reduced.

[0041] In the technical solution provided by the embodiment of the present invention, the cathode plate 1 has a accommodating cavity 6, at least two anode rods 2 are located in the accommodating cavity 6, and at least two anode rods 2 are arranged along the first direction X; at least two anode rods 2 and the cathode plate 1 are used to generate a bias electric field under an applied voltage; the cathode plate 1 includes a first cathode plate 10; voltage is applied to at least two anode rods 2 to ionize gas molecules in the accommodating cavity 6, the first permanent magnet 3 and the second permanent magnet 4 are located outside the accommodating cavity 6, and the magnetic field passes through the cathode plate 1 and enters the accommodating cavity 6, and there is no need to introduce the magnetic field into the accommodating cavity 6 through a magnetic yoke, thereby preventing impurity elements from entering the accommodating cavity 6 under the bias voltage, and preventing carbon atom particles in the accommodating cavity 6 from leaking out from the gap to pollute the wafer bonding surface, and the first permanent magnet 3 and the second permanent magnet 4 are located on both sides of the cathode plate 1 along the first direction X, confining the plasma in the accommodating cavity 6 to the area between the at least two anode rods 2 and the first cathode plate 10, and more electrons are distributed in the area between the first cathode plate 10 and the anode rod 2, thereby reducing the collision of plasma with the cathode plate 1, reducing the etching of the cathode plate 1 and the pollution of the wafer surface.

[0042] See also Figure 3 and Figure 4 On the basis of the above embodiment, optionally, the cathode plate 1 also includes a second cathode plate 11, a third cathode plate 12, a fourth cathode plate 13, a fifth cathode plate 14 and a sixth cathode plate 15; the second cathode plate 11 and the third cathode plate 12 are arranged opposite to each other along the first direction X; the fifth cathode plate 14 and the sixth cathode plate 15 are arranged opposite to each other along the second direction Y; the first cathode plate 10 and the fourth cathode plate 13 are arranged opposite to each other along the third direction Z; the first direction X, the second direction Y and the third direction Z are perpendicular to each other; the first permanent magnet 3 is arranged adjacent to the second cathode plate 11, the second permanent magnet 4 is arranged adjacent to the third cathode plate 12, the second cathode plate 11 and the third cathode plate 12 are parallel to each other, and the first permanent magnet 3 and the second permanent magnet 4 are arranged symmetrically relative to the cathode plate 1.

[0043] The second direction Y is perpendicular to the first direction X, and the second direction Y is parallel to the second cathode plate 11 and the third cathode plate 12. The third direction Z is perpendicular to the first direction X and the second direction Y.

[0044] Specifically, the first permanent magnet 3 and the second cathode plate 11 are arranged adjacent to each other, so that the modulus of the magnetic field strength generated by the first permanent magnet 3 is larger in the accommodating cavity 6, and the second permanent magnet 4 and the third cathode plate 12 are arranged adjacent to each other, so that the modulus of the magnetic field strength generated by the second permanent magnet 4 is larger in the accommodating cavity 6, and the first permanent magnet 3 and the second permanent magnet 4 are arranged symmetrically relative to the cathode plate 1, so that the modulus of the magnetic field strength in the accommodating cavity 6 is symmetrically distributed along the central axis of the line connecting the two anode rods 2. The greater the degree to which electrons make a loop motion around the magnetic flux lines under a larger magnetic field, the easier it is to collide with gas molecules to generate more plasma, and more and more plasma is confined to the area between the anode rod 2 and the first cathode plate 10, thereby avoiding collision with the cathode plate 1.

[0045] Figure 6 is a simulation diagram of the relationship between the plasma concentration on the cathode plate and the arc length of the cathode plate provided by an embodiment of the present invention. Figure 3 and Figure 6 , the arc length of the emitting plate is the length of the emitting plate surface along the second direction Y with the left end point of the emitting plate as the zero point, the arc length of the back plate is the length of the back plate surface along the second direction Y with the left end point of the back plate as the zero point, and the arc length of the side plate is the length of the side plate surface along the second direction Y with the left end point of the side plate as the zero point. The left end point of the emitting plate is the point on the edge where the emitting plate intersects with the fifth cathode plate 14, the left end point of the back plate is the point on the edge where the back plate intersects with the fifth cathode plate 14, and the left end point of the side edge is the point on the edge where the side plate intersects with the fifth cathode plate 14. The back plate refers to the fourth cathode plate 13, and the red area represents the plasma concentration on the fourth cathode plate 13; the emitting plate refers to the first cathode plate 10, and the green area represents the plasma concentration on the first cathode plate 10; the side plate refers to the second cathode plate 11 and the third cathode plate 12, and the orange area represents the plasma concentration on the second cathode plate 11 and the third cathode plate 12. At the position of 30-35 mm on the second cathode plate 11 and the third cathode plate 12, the concentration of plasma is the smallest. Under the action of the first permanent magnet 3 and the second permanent magnet 4, most of the plasma is confined to the area between the anode rod 2 and the first cathode plate 10, so that the plasma concentration on the second cathode plate 11 and the third cathode plate 12 is minimized, thereby avoiding plasma etching of the second cathode plate 11 and the third cathode plate 12 and reducing the generation of particles etched by carbon atoms.

[0046] In the embodiment of the present invention, the first permanent magnet 3 is arranged adjacent to the second cathode plate 11, and the second permanent magnet 4 is arranged adjacent to the third cathode plate 12, so that the modulus of the magnetic field strength in the accommodating cavity 6 is relatively large, and the first permanent magnet 3 and the second permanent magnet 4 are symmetrically arranged relative to the plane parallel to the second cathode plate 11, so that the modulus of the magnetic field strength in the accommodating cavity 6 is symmetrically distributed along the central axis of the line connecting the two anode rods 2, and the modulus of the magnetic field strength is strongest on the central axis of the line connecting the two anode rods 2, more plasma is confined near the central axis of the line connecting the two anode rods 2, thereby reducing the etching of the second cathode plate 11, the third cathode plate 12 and the fourth cathode plate 13 by the plasma, reducing the generation of carbon atom particles, and thereby reducing the contamination of the wafer bonding surface.

[0047] See also Figure 3 On the basis of the above embodiment, optionally, the first permanent magnet 3 and the second cathode plate 11 are spaced apart by a first preset size; the second permanent magnet 4 and the third cathode plate 12 are spaced apart by a first preset size, wherein the first preset size is greater than zero and less than a preset value.

[0048] Specifically, if the first preset size is greater than the preset value, the modulus of the magnetic field strength in the accommodating cavity 6 will be weakened, and more plasma cannot be confined between the first cathode plate 10 and the anode rod 2. Therefore, the first preset size is greater than zero and less than the preset value, so that the modulus of the magnetic field strength between the anode rod 2 and the first cathode plate 10 is stronger, and more electrons and plasma can be confined. Such a setting can reduce the collision of plasma with the cathode plate 1 to a greater extent, reduce the etching of the cathode plate 1 by plasma, and reduce the contamination of the wafer bonding surface.

[0049] See also Figure 3 , based on the above embodiment, optionally, the first preset size is less than or equal to 30 mm.

[0050] In an embodiment of the present invention, by setting the first preset size to be less than or equal to 30 mm, the modulus of the magnetic field strength in the accommodating cavity 6 is maximized, and the plasma confined in the area between the anode rod 2 and the first cathode plate 10 is maximized, thereby greatly reducing the etching of the cathode plate 1 and the contamination of the wafer bonding surface.

[0051] See also Figure 3 On the basis of the above embodiment, optionally, the size of the first permanent magnet 3 and the second permanent magnet 4 along the second direction Y is greater than or equal to the length of the region where the emission hole 5 on the first cathode plate 10 is located along the second direction Y.

[0052] Such a setting makes the modulus of the magnetic field strength in the area where the emitting hole 5 is located larger and more evenly distributed, so that more electrons and plasma are confined in the area where the emitting hole 5 is located, reducing the collision of plasma with the cathode plate 1, reducing the etching of the cathode plate 1, and reducing the contamination of the wafer bonding surface.

[0053] See also Figure 3 Based on the above embodiment, optionally, the magnetization intensity direction of the first permanent magnet 3 is the same as the magnetization intensity direction of the second permanent magnet 4.

[0054] Specifically, if the magnetization intensity direction of the first permanent magnet 3 is opposite to the magnetization intensity direction of the second permanent magnet 4, it is impossible to realize the loop motion of electrons along the magnetic flux lines. If the magnetization intensity direction of the first permanent magnet 3 is the same as the magnetization intensity direction of the second permanent magnet 4, the magnetic field lines can be distributed between the first permanent magnet 3 and the second permanent magnet 4. In addition, the modulus of the magnetic field intensity is symmetrical about the central axis of the accommodating cavity 6, and the center of the plasma is located on the central axis between the anode rod 2 and the first cathode plate 10, so that more plasma is confined between the anode rod 2 and the first cathode plate 10.

[0055] Continue to see Figure 3 On the basis of the above embodiment, optionally, the magnetization intensity of the first permanent magnet 3 and the magnetization intensity of the second permanent magnet 4 are greater than or equal to 0.3T and less than or equal to 1.5T.

[0056] Specifically, if the magnetization intensity of the first permanent magnet 3 and the magnetization intensity of the second permanent magnet 4 are less than 0.3T, the modulus of the magnetic field intensity generated by the first permanent magnet 3 and the second permanent magnet 4 in the accommodating cavity 6 is small, and more plasma cannot be confined. If the magnetization intensity of the first permanent magnet 3 and the magnetization intensity of the second permanent magnet 4 are greater than 1.5T, the magnetic field confinement intensity of the electrons is too large, making it difficult for the electrons to move to the anode rod 2 under the drive of the electric field to form a stable glow discharge. Therefore, the magnetization intensity of the first permanent magnet 3 and the magnetization intensity of the second permanent magnet 4 are greater than or equal to 0.3T and less than or equal to 1.5T, which can not only better confine the plasma, but also make it difficult for the electrons to move to the anode rod 2 under the drive of the electric field to form a stable glow discharge.

[0057] In the embodiment of the present invention, by setting the magnetization intensity of the first permanent magnet 3 and the magnetization intensity of the second permanent magnet 4 to be greater than or equal to 0.3 T and less than or equal to 1.5 T, not only can the plasma be better confined and the etching of the cathode plate 1 be reduced, but the plasma can also be better emitted from the emission hole 5 under the action of the electric field.

[0058] See also Figure 4On the basis of the above embodiment, optionally, the magnetically confined DC glow discharge plasma device further comprises: a power supply 8, the power supply 8 is located outside the accommodating chamber 6, the negative electrode of the power supply 8 is electrically connected to the cathode plate 1; the positive electrode of the power supply 8 is electrically connected to the anode rod 2; the power supply 8 is used to apply voltage to the anode rod 2;

[0059] The voltage applied by the power supply 8 to the anode rod 2 is greater than or equal to 300 V and less than or equal to 3000 V. The voltage applied to the anode rod 2 can ionize gas molecules and is also used to provide kinetic energy for plasma emission.

[0060] See also Figure 3 On the basis of the above embodiment, optionally, at least two through holes 7 are provided on the fifth cathode plate 14 and the sixth cathode plate 15; the through holes 7 of the fifth cathode plate 14 and the through holes 7 of the sixth cathode plate 15 are provided in one-to-one correspondence; the diameter of the through holes 7 is greater than the diameter of the anode rod 2; the anode rod 2 passes through the through holes 7; wherein the diameter of the anode rod 2 is greater than or equal to 1 mm and less than or equal to 20 mm.

[0061] Specifically, the anode rod 2 passes through the through hole 7 and does not contact the fifth cathode plate 14 and the sixth cathode plate 15 , so as to prevent the anode rod 2 from short-circuiting with the fifth cathode plate 14 and the sixth cathode plate 15 .

[0062] An embodiment of the present invention provides a bonding device, including the magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention.

[0063] In an embodiment of the present invention, the bonding equipment includes the magnetically confined DC glow discharge plasma device provided by any embodiment of the present invention, which reduces the generation of impurity particles and reduces the pollution to the wafer surface.

[0064] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0065] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A magnetically confined DC glow discharge plasma device, characterized in that: include: a cathode plate, at least two anode rods, a first permanent magnet and a second permanent magnet; The area surrounded by the cathode plate is a receiving cavity, the at least two anode rods are located in the receiving cavity, and the at least two anode rods are arranged along a first direction; the at least two anode rods and the cathode plate are used to generate a bias electric field under an applied voltage; the cathode plate includes a first cathode plate; the first cathode plate has an emitting hole; wherein the first direction is perpendicular to the extension direction of the anode rods, and the first direction is parallel to the first cathode plate; The first permanent magnet and the second permanent magnet are located outside the accommodating cavity, the first permanent magnet and the second permanent magnet are located on both sides of the cathode plate along the first direction, and the first permanent magnet and the second permanent magnet are arranged in the area between the anode rod and the first cathode plate; the first permanent magnet and the second permanent magnet are used to confine the plasma in the accommodating cavity to the area between the at least two anode rods and the first cathode plate; Wherein, the glow discharge device does not include a yoke for introducing a magnetic field into the interior of the accommodation cavity, and the cathode plate further includes a second cathode plate, a third cathode plate, a fourth cathode plate, a fifth cathode plate and a sixth cathode plate; The second cathode plate and the third cathode plate are arranged opposite to each other along a first direction; the fifth cathode plate and the sixth cathode plate are arranged opposite to each other along a second direction; the first cathode plate and the fourth cathode plate are arranged opposite to each other along a third direction; the first direction, the second direction and the third direction are perpendicular to each other; The first permanent magnet is disposed adjacent to the second cathode plate, the second permanent magnet is disposed adjacent to the third cathode plate, the second cathode plate and the third cathode plate are parallel to each other, and the first permanent magnet and the second permanent magnet are disposed symmetrically relative to the cathode plate; The magnetization intensity of the first permanent magnet and the magnetization intensity of the second permanent magnet are greater than or equal to 0.3T and less than or equal to 1.5T; The first permanent magnet and the second cathode plate are spaced apart by a first preset size; the second permanent magnet and the third cathode plate are spaced apart by a first preset size, wherein the first preset size is greater than zero and less than a preset value.

2. The magnetically confined DC glow discharge plasma device according to claim 1, characterized in that: The first preset size is less than or equal to 30 mm.

3. The magnetically confined DC glow discharge plasma device according to claim 1, characterized in that: The size of the first permanent magnet and the second permanent magnet along the second direction is greater than or equal to the length of the region where the emission hole on the first cathode plate is located along the second direction.

4. The magnetically confined DC glow discharge plasma device according to claim 1, characterized in that: The magnetization intensity direction of the first permanent magnet is the same as the magnetization intensity direction of the second permanent magnet.

5. The magnetically confined DC glow discharge plasma device according to claim 1, characterized in that: Also includes: A power supply, the power supply is located outside the accommodating cavity, the negative electrode of the power supply is electrically connected to the cathode plate; the positive electrode of the power supply is electrically connected to the anode rod; the power supply is used to apply voltage to the anode rod; Wherein, the voltage applied by the power supply to the anode rod is greater than or equal to 300V and less than or equal to 3000V.

6. The magnetically confined DC glow discharge plasma device according to claim 1, characterized in that: At least two through holes are provided on the fifth cathode plate and the sixth cathode plate; The through holes of the fifth cathode plate are arranged in one-to-one correspondence with the through holes of the sixth cathode plate; the diameter of the through holes is greater than the diameter of the anode rod; the anode rod passes through the through holes; Wherein, the diameter of the anode rod is greater than or equal to 1 mm and less than or equal to 20 mm.

7. A bonding device, characterized in that: A magnetically confined DC glow discharge plasma device comprising any one of claims 1-6.

Images