A manufacturing method for embedded chip substrate and temporary bonding structure

Abstract

The present invention discloses a manufacturing method and a temporary bonding structure for an embedded chip substrate, which relates to the field of semiconductor packaging technology to solve the problem of excessive warping of the substrate during the manufacturing process. The manufacturing method for the embedded chip substrate includes the steps of substrate windowing, first temporary bonding, chip attachment, first pressing and embedding resin, second temporary bonding, first debonding, second pressing and embedding resin and second debonding, blind hole processing, etc. In the steps of chip attachment, resin embedding, pre-curing, etc., the first support plate and / or the second support plate are used to support the substrate. The first support plate and / or the second support plate can reduce the overall warping of the substrate caused by structural asymmetry, ensuring that the substrate is always in a low-warping state during the manufacturing of the embedded chip substrate. In addition, each time the insulating layer is processed on the intermediate layer circuit, curing is performed once. The temporary bonding structure is a temporary structure generated during the above-mentioned manufacturing method of the embedded chip substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor packaging, and in particular to a manufacturing method of an embedded chip substrate and a temporary bonding structure. Background Art

[0002] Embedding the chip in the substrate is an advanced packaging form. By embedding the bare chip in the substrate, the signal transmission distance between the chip and the packaging components on the substrate surface and between chips can be greatly reduced, the signal transmission loss can be reduced, and the signal transmission quality can be improved; at the same time, the package size can be reduced and the device usage space can be compressed.

[0003] At present, the main manufacturing method of embedded chip substrate is to dig a cavity in the core board of the printed circuit board, embed the bare chip, fill it with resin, and then perform multi-layer wiring on both sides of the core board to form a substrate.

[0004] In the existing chip embedded substrate manufacturing method, after one side of the substrate is filled with resin and then subjected to single-sided pressing, severe warping is prone to occur due to the asymmetry of the structure. During the insulation layer pressing and curing baking process on the other side of the substrate, the substrate is flattened again. In this way, the substrate forms repeated bends from warping to flattening. Due to the high modulus of the solidified embedded resin, excessive warping and flattening will cause the rigid resin to crack. The weak bonding force between the rigid embedded resin and the chip interface will also cause interface cracking. Resin cracking and chip interface separation may cause the embedded substrate to fail, and even when the embedded substrate is in a humid environment, water vapor will accumulate at the crack interface, leading to serious reliability problems such as burning of the embedded substrate. Therefore, how to reduce substrate warping during substrate processing and manufacturing is a technical problem in the processing and manufacturing of embedded substrates, and is an important issue in improving the reliability of embedded substrates. Summary of the Invention

[0005] The object of the present invention is to provide a method for manufacturing an embedded chip substrate and a temporary bonding structure.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] A method for manufacturing an embedded chip substrate, comprising the steps of:

[0008] A substrate window is provided, wherein a cavity for accommodating the chip is provided on the substrate, and two surfaces of the substrate are respectively a first bonding surface and a resin embedding surface;

[0009] a first temporary bonding, bonding a first bonding material layer to the first bonding surface, wherein a first supporting plate is fixed to a side of the first bonding material layer facing away from the substrate;

[0010] Mounting the chip, placing the chip in the accommodating cavity;

[0011] A first pressing and filling resin is performed, wherein the resin is pressed and filled on the resin filling surface of the substrate to form a first resin layer, and a first pre-curing is performed. The structure formed in this step is placed in a constant temperature environment of 130° C. to 150° C. and maintained for 25 minutes to 35 minutes to pre-cur the resin in the structure. The side of the first resin layer facing away from the substrate serves as the second bonding surface.

[0012] Second temporary bonding, bonding a second bonding material layer to the second bonding surface, with a second support plate fixed to a side of the second bonding material layer facing away from the first resin layer;

[0013] a first debonding step of debonding the first bonding material layer and the first resin layer to remove the first bonding material layer and the first support plate;

[0014] Secondary pressing and embedding of resin, wherein the resin is pressed and embedded on the first bonding surface of the substrate to form a second resin layer, and a second pre-curing is performed to cure the resin in the structure formed in this step to more than 70%;

[0015] a second debonding step of debonding the second bonding material layer to remove the second bonding material layer and the second support plate;

[0016] Blind hole processing: opening blind holes on the upper and lower surfaces of the structure formed in the previous step;

[0017] Circuit fabrication: processing circuits on the upper and lower surfaces of the structure formed by blind hole processing;

[0018] Curing: Curing the resin layer in the structure formed by the circuit to more than 90%;

[0019] Insulation layer processing: a resin insulation layer is provided on both the upper and lower surfaces of the structure formed in the curing step, and a third pre-curing is performed to cure the resin in the structure formed in this step to 70%-80%;

[0020] Fabricating an intermediate circuit and an outer layer circuit, repeating the blind hole processing, circuit fabrication, curing steps and insulation layer processing steps N times, N ≥ 0, to form an intermediate circuit, and then repeating the blind hole processing, circuit fabrication and curing steps to form an outer layer circuit;

[0021] Making a solder resist layer, and making a solder resist layer on the surface of the outer layer circuit;

[0022] A coating is applied to the surface of the structure formed after the solder resist layer is formed.

[0023] In one embodiment, the first debonding further comprises the steps of: first cleaning, cleaning the first bonding surface; and / or,

[0024] After the second debonding, the method further includes the step of: second cleaning, cleaning the second bonding surface.

[0025] In one implementation, the first pre-curing cures the resin in the formed structure to more than 50%.

[0026] In one implementation, the second pre-curing is specifically: placing the structure formed in this step in a constant temperature environment of 170° C.-185° C. for 25 min-35 min to pre-curing the resin in the structure.

[0027] In one implementation, the third pre-curing is specifically: placing the formed structure in a constant temperature environment of 95° C.-105° C. for 25 min-35 min, and then placing it in a constant temperature environment of 170° C.-185° C. for 25 min-35 min.

[0028] In one implementation, the curing is specifically: curing the resin in the structure to be formed to more than 90% in an environment at a temperature above 180°C.

[0029] In one implementation, the curing temperature of the first pre-curing is lower than the debonding temperature of the first bonding material layer; or

[0030] The debonding temperature of the first bonding material layer is lower than the debonding temperature of the second bonding material layer.

[0031] In one implementation, the raw materials used in the first pressing and filling resin step, the second pressing and filling resin step, and the insulation layer processing step are all ABF resin sheets, and the ABF resin sheet includes an ABF layer, an OPP film attached to the first side of the ABF layer, and a PET film attached to the second side of the ABF layer.

[0032] In one implementation, the first resin embedding pressing step specifically includes: removing the OPP film of the ABF resin sheet, and pressing the first side of the ABF resin sheet onto the resin embedding surface of the substrate to form a first resin layer, and performing a first pre-curing so that the resin in the structure formed in this step is cured to more than 50%, and the side of the first resin layer facing away from the substrate is the second bonding surface and retains the PET film; and / or,

[0033] The second pressing and filling resin step is specifically to remove the OPP film of the ABF resin sheet, and press the first side of the ABF resin sheet onto the first bonding surface of the substrate to form a second resin layer, and perform a second pre-curing to cure the resin in the structure formed in this step to more than 70%, and the second resin layer retains the PET film.

[0034] A temporary bonding structure comprising:

[0035] A substrate, wherein the substrate is provided with an accommodating cavity for accommodating the chip, and the two surfaces of the substrate are respectively a first bonding surface and a resin-filled surface;

[0036] a chip, wherein the chip is disposed in the accommodating cavity;

[0037] a first bonding material layer and a first supporting plate, wherein the first bonding material layer is bonded to the first bonding surface, and the first supporting plate is fixed to a side of the first bonding material layer facing away from the substrate;

[0038] a first resin layer, the first resin layer being located on the resin-embedded surface of the substrate, the side of the first resin layer facing away from the substrate being a second bonding surface;

[0039] A second bonding material layer and a second supporting plate, wherein the second bonding material layer is bonded to the second bonding surface, and the second supporting plate is fixed to a side of the second bonding material layer facing away from the substrate.

[0040] In one implementation, the first support plate and / or the second support plate is a double-sided copper-clad plate, a metal plate, a glass plate or a ceramic plate; and / or the thickness of the first support plate and / or the second support plate is greater than 0.2 mm.

[0041] In one implementation, the first bonding material layer includes a foaming film, a support film, and a pressure-sensitive adhesive film stacked in sequence, and the pressure-sensitive adhesive film of the first bonding material layer is bonded to the substrate; and / or, the second bonding material layer includes a foaming film, a support film, and a pressure-sensitive adhesive film stacked in sequence, and the pressure-sensitive adhesive film of the second bonding material layer is bonded to the first resin layer.

[0042] In the manufacturing method of the embedded chip substrate provided by the present invention, a first support plate and / or a second support plate are used to support the substrate during the steps of chip attachment, resin embedding, and pre-curing. The supporting function of the first support plate and / or the second support plate can reduce the overall warping of the substrate caused by structural asymmetry during the manufacturing process of the embedded chip substrate, ensuring that the substrate is always in a low-warping state throughout the entire embedded chip substrate manufacturing process. In addition, a first pre-curing is performed in the first resin embedding step, and a second pre-curing is performed in the second resin embedding step, ultimately allowing the first resin layer and the second resin layer to reach the same degree of curing, forming a symmetrical structure for the entire substrate, reducing the warping level of the substrate, and avoiding excessive warping of the substrate caused by the different degrees of curing of the first resin layer and the second resin layer during the manufacturing process of the embedded chip substrate, thereby avoiding cracking of the brittle cured resin and cracking of the chip-resin interface with weak bonding strength.

[0043] The present invention further provides a temporary bonding structure. The beneficial effects of the temporary bonding structure provided by the present invention are the same as the beneficial effects of the method for manufacturing the embedded chip substrate described in the above technical solution, and will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0045] Figure 1 A schematic flow chart of a method for manufacturing an embedded chip substrate provided by an embodiment of the present invention;

[0046] Figure 2 The structure formed after the substrate windowing step provided in the embodiment of the present invention;

[0047] Figure 3 The structure formed after the first temporary bonding step provided in an embodiment of the present invention;

[0048] Figure 4 The structure formed after the chip attachment step provided in the embodiment of the present invention;

[0049] Figure 5 The structure formed after the first resin embedding step provided in the embodiment of the present invention;

[0050] Figure 6 The structure formed after the second temporary bonding step provided by the embodiment of the present invention;

[0051] Figure 7 The structure formed after the first debonding step provided in an embodiment of the present invention;

[0052] Figure 8 The structure formed after the second resin embedding step provided in the embodiment of the present invention;

[0053] Figure 9 The structure formed after the second debonding step provided in an embodiment of the present invention;

[0054] Figure 10 The structure formed after the blind hole processing step provided in the embodiment of the present invention;

[0055] Figure 11 The structure formed after the circuit manufacturing steps provided in the embodiment of the present invention;

[0056] Figure 12 The structure formed after the insulating layer processing step provided in the embodiment of the present invention;

[0057] Figure 13The structure formed by repeating the blind hole processing, circuit fabrication and curing steps provided in the embodiment of the present invention;

[0058] Figure 14 The structure formed after the step of making the solder resist layer provided in the embodiment of the present invention;

[0059] Figure 15 A schematic structural diagram of the first bonding material layer or the second bonding material layer provided in an embodiment of the present invention.

[0060] Figure markings: 1-substrate, 1a-accommodating cavity, 1b-substrate circuit, 2-first bonding material layer, 3-first support plate, 4-chip, 5-first resin layer, 6-second bonding material layer, 7-second support plate, 8-second resin layer, 9-blind hole, 10-circuit outside the resin layer, 11-resin insulation layer, 12-outer layer circuit, 13-solder mask, a-foaming film, b-support film, c-pressure-sensitive adhesive film. DETAILED DESCRIPTION

[0061] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0062] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0063] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined. "Several" means one or more, unless otherwise specifically defined.

[0064] In the description of the present invention, it should be understood that the terms "up", "down", "front", "back", "left", "right", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0065] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and may encompass internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0066] See also Figure 1 , Figure 1 This is a flow chart of an embodiment provided by the present invention. The method for manufacturing an embedded chip substrate in this embodiment includes the following steps:

[0067] S1: A window is opened on the substrate 1, and a cavity 1a for accommodating the chip 4 is opened on the substrate 1. The two sides of the substrate 1 are the first bonding surface and the resin-filled surface respectively;

[0068] In this step, the surface of the substrate 1 may or may not have circuits. Figure 2 The middle substrate has a substrate circuit 1b. Specifically, the substrate 1 can be a resin substrate 1 with no circuit on the surface or a double-sided copper-clad board with no circuit on the surface. Of course, copper circuits can also be provided on the surface of the substrate 1. The accommodating cavity 1a opened on the substrate 1 can be a through hole that penetrates the thickness direction of the substrate 1. The two sides of the substrate 1 are the first bonding surface and the embedded resin surface. Specifically, the two sides of the substrate 1 along the thickness direction of the substrate 1 are the first bonding surface and the embedded resin surface, or when the substrate 1 is placed horizontally, that is, when the thickness direction of the substrate 1 is along the vertical direction, the upper surface and the lower surface of the substrate 1 are the embedded resin surface and the first bonding surface, respectively. The structure formed after the window opening step of the substrate 1 is as follows. Figure 2 shown.

[0069] Substrate 1 can be made of BT (Bismaleimide Triazine) resin or FR4. BT resin has a very high glass transition temperature, excellent dielectric properties, low thermal expansion, and good mechanical properties, making it suitable for substrate 1. FR4 is a designation for a flame-resistant material grade, indicating that the resin must be able to self-extinguish after combustion. Substrate 1 can also be made of other materials, which are not limited here.

[0070] S2: first temporary bonding, bonding the first bonding material layer 2 to the first bonding surface, with a first support plate 3 fixed to a side of the first bonding material layer 2 facing away from the substrate 1;

[0071] That is, the first bonding material layer 2 is bonded to the first bonding surface of the substrate 1. In this embodiment, the first bonding surface can be the lower surface of the substrate 1. A first support plate 3 is fixed to the side of the first bonding material layer 2 facing away from the substrate 1, that is, the first bonding material layer 2 is located between the first support plate 3 and the substrate 1, and the first support plate 3 is bonded to the side of the first bonding material layer 2 facing away from the substrate 1. The structure formed after the first temporary bonding step is as follows: Figure 3 shown.

[0072] It should be noted here that the first bonding material layer 2 can be bonded to the first support plate 3 first and then to the substrate 1. In this way, the first bonding material layer 2 can be bonded to the first support plate 3 before the chip 4 is packaged for standby use. Of course, the first bonding material layer 2 can also be bonded to the substrate 1 first and then to the first support plate 3. This is not limited here.

[0073] Among them, the material of the first support plate 3 can be BT resin, and the first support plate 3 can be a double-sided copper-clad plate made of BT resin. Of course, the first support plate 3 can also be made of other materials, which are not limited here. The thickness of the first support plate 3 can be greater than or equal to 0.2 mm. Specifically, the thickness of the first support plate 3 can be 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, etc. Furthermore, the thickness of the first support plate 3 can be greater than or equal to 0.8 mm, such as 0.8 mm, 0.9 mm, etc., so as to ensure the strength of the first support plate 3 and prevent the substrate 1 from warping during processing.

[0074] In this embodiment, the first bonding material layer 2 can be specifically a bonding glue, and specifically the 3195N temporary bonding glue produced by Nitto that is heat-foamed and debonded at 170°C can be selected. Of course, other temporary bonding glues can also be selected according to actual conditions, which is not limited here.

[0075] S3: attach the chip 4 and place the chip 4 in the accommodating cavity 1a;

[0076] The chip 4 is placed in the receiving cavity 1a of the substrate 1. The electrode side of the chip 4 can be placed upward or downward. When the receiving cavity 1a is a through hole, the electrode side of the chip 4 can be placed downward to fit the first bonding material layer 2. The structure formed after the chip 4 is attached is as follows: Figure 4 shown.

[0077] S4: First pressing and filling resin, pressing and filling resin on the filling resin surface of substrate 1 to form a first resin layer 5, and performing a first pre-curing to cure the resin in the structure formed in this step to more than 50%, and the side of the first resin layer 5 facing away from substrate 1 is the second bonding surface;

[0078] That is, the embedding resin is pressed onto the embedded resin surface of the substrate 1, and the embedded resin forms a first resin layer 5. In this embodiment, the embedded resin surface can be the upper surface of the substrate 1. Pressing the embedding resin onto the embedded resin surface of the substrate 1 can be performed by pressing the resin onto the embedded resin surface of the substrate 1. Specifically, a vacuum laminator can be used to press the resin onto the embedded resin surface of the substrate 1. During the pressing process, the resin fills the gaps between the circuits on the surface of the substrate 1 and the gaps around the chip 4.

[0079] After the embedded resin surface of the substrate 1 is pressed and embedded with the resin, a first pre-curing is performed. The first pre-curing can be a low-temperature thermal curing, so that the first resin layer 5 is cured to a certain extent, but not completely cured. The structure formed after the first pressing and embedding resin step is as follows. Figure 5 shown.

[0080] The first pre-curing step may specifically include curing the resin in the structure formed in this step to more than 50%. Specifically, the structure formed in this step may be placed in a constant temperature environment of 140° C. for 30 minutes.

[0081] An ABF (Ajinomoto Buildup Film) resin sheet can be used in the first resin lamination step. The ABF resin sheet includes an ABF layer, an OPP (O-phenylphenol) film laminated to a first side of the ABF layer, and a PET (polyethylene glycol terephthalate) film laminated to a second side of the ABF layer.

[0082] In this first resin embedding step, the OPP film of the ABF resin sheet is removed, and the first side of the ABF resin sheet is laminated to the resin embedding surface of the substrate to form a first resin layer. A first pre-curing step is then performed to cure the resin in the structure formed in this step to at least 50%. The side of the first resin layer facing away from the substrate serves as the second bonding surface, with the PET film remaining. Specifically, in this step, the OPP film of the ABF resin sheet is removed, while the PET film remains. The ABF resin sheet, with the OPP film removed, is then laminated to the resin embedding surface of the substrate.

[0083] Specifically, a vacuum laminator can be used for low-temperature vacuum lamination to press the ABF resin sheet, after removing the OPP film, onto the embedded resin surface of the substrate. In this step, the ABF resin sheet is only bonded and leveled in the vacuum laminator. The vacuum laminator includes a vacuum laminating section and a leveling section. The vacuum laminating section is primarily used to press the ABF resin sheet onto the embedded resin surface of the substrate. Due to the uneven surface of the inner layer circuit, the surface of the ABF resin sheet remains uneven after lamination by the vacuum laminating section. The leveling section then levels the ABF resin sheet to achieve a smooth surface. The first pre-curing is performed in an oven.

[0084] The resin may be a GXT31 ABF resin sheet. Alternatively, the resin may be a prepreg (prepreg) sheet or a copper-clad resin sheet (RCC), which is not limited here.

[0085] S5: second temporary bonding, bonding the second bonding material layer 6 to the second bonding surface, and fixing a second support plate 7 on the side of the second bonding material layer 6 facing away from the first resin layer 5;

[0086] That is, the second bonding material layer 6 is bonded to the second bonding surface. In this embodiment, the second bonding surface is the upper surface of the first resin layer 5. A second support plate 7 is fixed to the side of the second bonding material layer 6 facing away from the first resin layer 5. That is, the second bonding material layer 6 is located between the second support plate 7 and the first resin layer 5, and the second support plate 7 is bonded to the side of the second bonding material layer 6 facing away from the first resin layer 5. The structure formed after the second temporary bonding step is as follows: Figure 6 shown.

[0087] It should be noted here that the second bonding material layer 6 can be bonded to the second support plate 7 first and then to the first resin layer 5. In this way, the second bonding material layer 6 can be bonded to the second support plate 7 before the chip 4 is packaged for standby use. Of course, the second bonding material layer 6 can also be bonded to the first resin layer 5 first and then to the second support plate 7. This is not limited here.

[0088] Among them, the material of the second support plate 7 can be BT resin, and the second support plate 7 can be a double-sided copper-clad plate made of BT resin. Of course, the second support plate 7 can also be made of other materials, which are not limited here. The thickness of the second support plate 7 can be greater than or equal to 0.2 mm. Specifically, the thickness of the second support plate 7 can be 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, etc. Furthermore, the thickness of the second support plate 7 can be greater than or equal to 0.8 mm, such as 0.8 mm, 0.9 mm, etc., so as to ensure the strength of the second support plate 7 and prevent the substrate 1 from warping during processing.

[0089] In this embodiment, the second bonding material layer 6 can be specifically a bonding glue, and specifically the 210°C foaming and debonding 31950E temporary bonding glue produced by Nitto can be selected. Of course, other temporary bonding glues can also be selected according to actual conditions, which is not limited here.

[0090] Because only the OPP film of the ABF resin sheet is removed in step S4, while the PET film remains, the second bonding material layer 6 is directly bonded to the PET film of the first resin layer 5. This prevents the second bonding material layer 6 from directly contacting the ABF layer of the first resin layer 5. After debonding, the PET film is removed to ensure that the first resin layer 5 is free of residual bonding contamination. The PET film can be removed before or after the blind hole processing step.

[0091] S6: first debonding, debonding the first bonding material layer 2 from the first bonding surface to remove the first bonding material layer 2 and the first support plate 3;

[0092] In this step, only the first bonding material layer 2 and the first bonding surface of the substrate 1 need to be debonded, that is, the first bonding material layer 2 and the first support plate 3 are removed from the substrate 1, while the second bonding material layer 6 and the first resin layer 5 are not debonded, and the second bonding material layer 6 is still bonded to the first resin layer 5. The first debonding can be a low-temperature debonding, and the debonding temperature of the first bonding material layer 2 is lower than the debonding temperature of the second bonding material layer 6. The structure formed after the first debonding step is as follows: Figure 7 shown.

[0093] The first pre-curing temperature should be lower than the debonding temperature of the first bonding material layer 2. If the debonding temperature of the first bonding material layer 2 is 170°C, the first pre-curing temperature should be lower than 170°C. Preferably, the first pre-curing temperature is lower than the debonding temperature of the first bonding material layer 2 by more than 10°C or by 25°C-35°C. Specifically, the first pre-curing temperature is lower than the debonding temperature of the first bonding material layer 2 by 10°C, 15°C, 20°C, 25°C, 30°C, or 35°C. Preferably, the first pre-curing temperature can be lower than the debonding temperature of the first bonding material layer 2 by 20°C or 30°C.

[0094] S7: Second pressing and filling resin, pressing and filling resin on the first bonding surface of the substrate 1 to form a second resin layer 8, and performing a second pre-curing to cure the resin in the structure formed in this step to more than 70%;

[0095] That is, the resin is pressed and embedded on the first bonding surface of the substrate 1, and the embedded resin forms a second resin layer 8. The resin can be pressed and embedded on the first bonding surface of the substrate 1 by laminating the resin on the first bonding surface of the substrate 1. Specifically, a vacuum laminator can be used to press the resin on the first bonding surface of the substrate 1. During the resin embedding process, the resin fills the gaps between the circuits on the surface of the substrate 1 and the gaps around the chip 4.

[0096] After the first bonding surface of the substrate 1 is pressed and filled with resin, a second pre-curing is performed. The second pre-curing can be a low-temperature thermal curing to cure the second resin layer 8 to a certain extent, but not completely. The structure formed after the second pressing and filling resin step is as follows. Figure 8 As shown. It should be noted that during the second pre-curing process, the first resin layer 5 and the second resin layer 8 are further cured. After the second pre-curing, the first resin layer 5 and the second resin layer 8 reach the same degree of curing, but neither the first resin layer 5 nor the second resin layer 8 is completely cured. The second pre-curing can be specifically performed by placing the structure formed in this step in a constant temperature environment of 180°C for 30 minutes.

[0097] It should be noted that the thickness and / or material of the first resin layer 5 and the second resin layer 8 can be the same, so that the structures of the first resin layer 5 and the second resin layer 8 on the upper and lower surfaces of the substrate 1 are symmetrical, thereby reducing warping.

[0098] An ABF (Ajinomoto Buildup Film) resin sheet can also be used in this second resin lamination step. In this second resin lamination step, the OPP film of the ABF resin sheet is removed, and the first side of the ABF resin sheet is laminated to the first bonding surface of substrate 1 to form a second resin layer 8. A second pre-curing step is then performed to cure the resin in the structure formed in this step to at least 70%. The PET film remains on the side of second resin layer 8 facing away from the substrate. In other words, in this step, the OPP film of the ABF resin sheet is removed, while the PET film remains. The ABF resin sheet, with the OPP film removed, is laminated to the first bonding surface of substrate 1.

[0099] The PET film can protect the ABF layer in this way, and the PET film can be torn off before or after the blind hole processing. The process of laminating the second resin layer 8 is also carried out in a vacuum laminator, and the second pre-curing is carried out in an oven, which will not be described in detail here.

[0100] In this step, the resin can be specifically selected from the ABF resin sheet of model GXT31. Of course, the resin can also be a semi-cured PP sheet or a copper-clad resin sheet RCC, which is not limited here.

[0101] S8 : second debonding, debonding the second bonding material layer 6 and the first resin layer 5 to remove the second bonding material layer 6 and the second support plate 7 .

[0102] In this step, the second bonding material layer 6 is debonded from the second bonding surface of the first resin layer 5, that is, the second bonding material layer 6 and the second support plate 7 are removed from the substrate 1. The structure formed after the second debonding step is as follows: Figure 9 shown.

[0103] In the manufacturing method of the embedded chip substrate provided by the above embodiment, the first support plate 3 and / or the second support plate 7 support the substrate 1 in the steps of attaching the chip 4, embedding the resin, and pre-curing. The supporting function of the first support plate 3 and / or the second support plate 7 can reduce the overall warping of the substrate 1 caused by structural asymmetry during the manufacturing process of the embedded chip substrate, ensuring that the substrate 1 is always in a low-warping state during the entire chip 4 embedded chip substrate manufacturing process. In addition, the first pre-curing is performed in the first pressing and embedding resin step, and the second pre-curing is performed in the second pressing and embedding resin step, ultimately making the first resin layer 5 and the second resin layer 8 reach the same degree of curing, forming a symmetrical structure for the entire substrate 1, reducing the warping level of the substrate 1, and avoiding excessive warping of the substrate 1 caused by the different degrees of curing of the first resin layer 5 and the second resin layer 8 during the manufacturing process of the embedded chip substrate, thereby avoiding the formation of brittle cured resin cracking and the chip 4 with weak bonding strength and the resin interface cracking.

[0104] The debonding temperature of the second bonding material layer 6 should be higher than the debonding temperature of the first bonding material layer 2. The debonding temperature of the second bonding material layer 6 can be 210°C. In addition, the second pre-curing temperature should be lower than the debonding temperature of the second bonding material layer 6. If the debonding temperature of the second bonding material layer 6 is 210°C, the second pre-curing temperature should be lower than 210°C. Preferably, the second pre-curing temperature is lower than the debonding temperature of the second bonding material layer 6 by at least 10°C or by 25°C to 35°C. Specifically, the second pre-curing temperature can be lower than the debonding temperature of the second bonding material layer 6 by 20°C or 30°C.

[0105] S9: Blind hole 9 processing, blind holes 9 are opened on the upper surface and lower surface of the structure formed in the previous step. That is, blind holes 9 are opened on the upper surface and lower surface of the structure formed in the step before the blind hole 9 processing step. In this embodiment, blind holes 9 can be opened on the surface of the first resin layer 5 and the second resin layer 8, so that the circuit covered by the first resin layer 5 and the second resin layer 8 is electrically connected to the outer layer circuit 12 through the blind holes 9. Specifically, the blind holes 9 can be formed on the surface of the first resin layer 5 and the second resin layer 8 by laser drilling. The structure formed after the blind hole 9 processing step is as follows Figure 10 shown.

[0106] S10: Circuit fabrication: processing circuits on the upper and lower surfaces of the structure formed by the blind hole 9;

[0107] Specifically, a circuit is processed on the surface of the structure formed by processing the blind hole 9 to form a circuit 10 outside the resin layer. In this embodiment, the circuit can be processed on the surface of the first resin layer 5 and the second resin layer 8, and the above circuit is electrically connected to the circuit covered by the first resin layer 5 and the second resin layer 8 through the blind hole 9. The structure formed after the circuit production step is as shown Figure 11 shown.

[0108] S11: curing, curing the resin layer in the structure formed by the circuit manufacturing to more than 90%;

[0109] High temperature curing can be used in this step. After this step is completed, the first resin layer 5 and the second resin layer 8 can be cured to more than 90%, that is, the curing degree of the first resin layer 5 and the second resin layer 8 is more than 90%. Specifically, the structure formed by the circuit production can be placed in a constant temperature environment of 190°C-210°C to cure the resin in the structure to more than 90%. For example, the structure formed by the circuit production can be placed in a constant temperature environment of 190°C, 195°C, 200°C, 205°C or 210°C to cure the resin in the structure to more than 90%. Preferably, the structure formed by the circuit production is placed in a constant temperature environment of 190°C to cure the resin in the structure to more than 90%. This curing step can also be carried out in an oven.

[0110] S12: Insulation layer processing: a resin insulation layer 11 is provided on both the upper and lower surfaces of the structure formed in the curing step, and a third pre-curing is performed to cure the resin in the structure formed in this step to 70%-80%.

[0111] That is, the resin is pressed and filled on the upper and lower surfaces of the structure formed in the curing step to form a resin insulating layer 11 on the upper and lower surfaces of the structure formed in the curing step. Specifically, the resin fills the gaps between the circuits formed in the circuit manufacturing step, and the resin insulating layer 11 covers the circuits formed in the circuit manufacturing step and partially contacts the first resin layer 5 or the second resin layer 8. A third pre-curing is performed, that is, the resin insulating layer 11 is cured to a certain extent, but not completely cured. The structure formed after the insulating layer processing step is as shown in FIG. Figure 12 shown.

[0112] The resin insulation layer 11 can also be made of an ABF resin sheet. During the insulation layer processing step, the OPP film of the ABF resin sheet is removed, and the first side of the ABF resin sheet is pressed against the upper and lower surfaces of the structure formed in the curing step. A third pre-curing step is performed to cure the resin in the structure formed in this step to 70%-80%. A PET film is retained on the side of the insulation layer facing away from the substrate to protect the insulation layer from contamination.

[0113] In this step, the insulating layer resin can be specifically selected from the ABF resin sheet of model GXT31. Of course, the resin can also be a semi-cured PP sheet or a copper-clad resin sheet RCC, which is not limited here.

[0114] The third pre-curing can be specifically performed by placing the formed structure in a constant temperature environment of 100°C for 30 minutes, and then placing it in a constant temperature environment of 180°C for 30 minutes, so that the curing degree of the resin insulation layer 11 reaches 70%-80%. The third pre-curing can also be performed in an oven.

[0115] S13: Make an intermediate circuit and an outer layer circuit, repeat the blind hole 9 processing, circuit production, curing steps and insulation layer processing steps N times, N≥0, to form an intermediate circuit, and then repeat the blind hole processing, circuit production and curing steps to form an outer layer circuit 12.

[0116] The steps of blind hole 9 processing, circuit fabrication, curing, and insulating layer processing are repeated N times, where N ≥ 0. When N > 0, N layers of intermediate circuits can be processed in this step. When N = 0, the outer layer circuit is processed directly. That is, each time the steps of blind hole 9 processing, circuit fabrication, curing, and insulating layer processing are repeated, a layer of intermediate circuit is processed. The key point in this embodiment is that each time a layer of intermediate circuit is processed and the resin insulating layer 11 is formed on the circuit surface, curing is performed to a degree of at least 90%.

[0117] Then, the blind hole 9 processing, circuit making and curing steps are repeated, that is, blind holes 9 are opened again on the surface of the structure, circuits are made, and outer layer circuits 12 are formed. The outer layer circuits 12 are electrically connected to the inner circuits through the blind holes 9, and then the resin in the structure is cured to more than 90%, that is, the curing degree of the resin in the structure is more than 90%. The structure formed after this step is as follows Figure 13 shown.

[0118] S14: Make solder resist layer 13, make solder resist layer 13 on the surface of outer layer circuit 12. The structure formed after the step of making solder resist layer 13 is as follows Figure 14 shown.

[0119] S15: coating the surface of the structure formed after forming the solder resist layer 13. The coating may be made of NiPdAu (nickel palladium gold), NiAu (nickel gold), Sn (tin) or OSP (Organic Solderability Preservatives).

[0120] Furthermore, S11 curing can specifically be to cure the resin in the structure to be formed to more than 90% in an environment above 180°C. Specifically, the structure formed by the circuit manufacturing can be placed in a constant temperature environment above 180°C to cure the resin in the structure to more than 90%. For example, the structure formed by the circuit manufacturing can be placed in a constant temperature environment of 185°C, 188°C, 190°C or 195°C to cure the resin in the structure to more than 90%. Preferably, the structure formed by the circuit manufacturing is placed in a constant temperature environment of 190°C to cure the resin in the structure to more than 90%.

[0121] In another embodiment, S6 is added ， First washing step and / or S8 ， Second washing step.

[0122] Specifically, after the first debonding, the following step may be further included: S6 ， The first cleaning step involves cleaning the first bonding surface. That is, after the first bonding material layer 2 is debonded from the first bonding surface, the first bonding surface can be cleaned to prevent residual material. Specifically, a plasma cleaner can be used to clean the first bonding surface. Of course, other cleaning methods, such as ultrasonic alkaline solution cleaning, are also possible, and are not limited here.

[0123] In addition, the second debonding may further include the following step: S8 ， The second cleaning step involves cleaning the second bonding surface. That is, after the second bonding material layer 6 is debonded from the second bonding surface, the second bonding surface can be cleaned to prevent any residual material. Specifically, a plasma cleaner can be used to clean the second bonding surface, although other cleaning methods are also possible and are not limited here.

[0124] In each of the above embodiments, the first pre-curing step may specifically include curing the resin in the formed structure to 50% or more, i.e., the curing degree of the resin after the first pre-curing step is 50% or more. Specifically, the curing degree of the resin after the first pre-curing step may be 60%, 70%, 75%, etc., to harden the resin and improve its rigidity and mechanical impact resistance. Preferably, the resin in the formed structure is cured to 70% or more, but not completely cured.

[0125] Alternatively, the first pre-curing may specifically include placing the formed structure in a constant temperature environment of 130°C to 150°C for 25 to 35 minutes to pre-cure the resin in the structure. Specifically, the formed structure may be placed in a constant temperature environment of 130°C, 135°C, 140°C, or 150°C for 25 minutes, 30 minutes, or 35 minutes. Preferably, the formed structure is placed in a constant temperature environment of 140°C for 30 minutes.

[0126] In addition, in each of the above embodiments, the second pre-curing step may specifically include curing the resin in the formed structure to a degree of curing of 70% or more, i.e., the degree of curing of the resin after the second pre-curing step is 70% or more. Specifically, the degree of curing of the resin after the first pre-curing step may be 70%, 75%, 80%, etc., to harden the resin and improve its rigidity and mechanical impact resistance. Preferably, the resin in the formed structure is cured to a degree of curing of 80% or more, but not completely cured.

[0127] Alternatively, the second pre-curing may specifically include placing the formed structure in a constant temperature environment of 170°C-185°C for 25-35 minutes to pre-cure the resin in the structure. Specifically, the formed structure may be placed in a constant temperature environment of 170°C, 175°C, 180°C, or 185°C for 25 minutes, 30 minutes, or 35 minutes. Preferably, the formed structure is placed in a constant temperature environment of 180°C for 30 minutes.

[0128] In the above embodiments, the third pre-curing can be specifically as follows: curing the resin insulation layer 11 in the formed structure to above 70%-80%, that is, the curing degree of the resin insulation layer 11 after the third pre-curing is above 70%. Specifically, the curing degree of the resin insulation layer 11 after the third pre-curing can be 70%, 75%, 80%, etc., so as to harden the resin and improve the resin rigidity and resistance to mechanical impact.

[0129] Alternatively, the third pre-curing may be specifically as follows: placing the formed structure in a constant temperature environment of 95°C-105°C for 25-35 minutes, and then placing it in a constant temperature environment of 170°C-185°C for 25-35 minutes. Specifically, the formed structure may be placed in a constant temperature environment of 95°C, 100°C, or 105°C for 25 minutes, 30 minutes, or 35 minutes, and then placed in a constant temperature environment of 170°C, 180°C, or 185°C for 25 minutes, 30 minutes, or 35 minutes. Preferably, the formed structure is placed in a constant temperature environment of 100°C for 30 minutes, and then placed in a constant temperature environment of 180°C for 30 minutes.

[0130] In an optional embodiment, the curing temperature of the first pre-curing is lower than the debonding temperature of the first bonding material layer 2. If the debonding temperature of the first bonding material layer 2 is 165°C-175°C, the first pre-curing temperature should be lower than 165°C-175°C. Specifically, the debonding temperature of the first bonding material layer 2 can be 170°C. Preferably, the first pre-curing temperature is 25°C-35°C lower than the first debonding temperature, and specifically, the first pre-curing temperature can be 30°C lower than the first debonding temperature.

[0131] The debonding temperature of the first bonding material layer 2 is lower than the debonding temperature of the second bonding material layer 6. This ensures that when the first bonding material layer 2 is debonded, the second bonding material layer 6 remains bonded to the first resin layer 5. The debonding temperature of the first bonding material layer 2 can be 165°C-175°C, and preferably the debonding temperature of the first bonding material layer 2 can be 170°C. The debonding temperature of the second bonding material layer 6 can be 200°C-220°C, and preferably the debonding temperature of the second bonding material layer 6 can be 210°C. Preferably, the debonding temperature of the first bonding material layer 2 can be 15°C-35°C lower than the debonding temperature of the second bonding material layer 6. Specifically, the debonding temperature of the first bonding material layer 2 can be 15°C, 20°C, 25°C, 30°C, or 35°C lower than the debonding temperature of the second bonding material layer 6. Preferably, the debonding temperature of the first bonding material layer 2 and the debonding temperature of the second bonding material layer 6 differ by 30°C.

[0132] The embodiment of the present invention also provides a temporary bonding structure, such as Figure 6 As shown, the temporary bonding structure includes: a substrate 1, a chip 4, a first bonding material layer 2, a first support plate 3, a first resin layer 5, a second bonding material layer 6 and a second support plate 7. The temporary bonding structure is specifically a structure formed after step S8. Specifically, the substrate 1 is provided with a receiving cavity 1a for accommodating the chip 4, and the two sides of the substrate 1 are respectively the first bonding surface and the resin embedding surface. When the substrate 1 is placed horizontally, that is, when the thickness direction of the substrate 1 is along the vertical direction, the upper surface and the lower surface of the substrate 1 are respectively the resin embedding surface and the first bonding surface. The chip 4 is arranged in the receiving cavity 1a, and the electrode side of the chip 4 can be placed upwards or downwards. The first bonding material layer 2 is bonded to the first bonding surface, and the first support plate 3 is fixed to the side of the first bonding material layer 2 facing away from the substrate 1. The first bonding material layer 2 is located between the first support plate 3 and the substrate 1, and the first support plate 3 is bonded to the side of the first bonding material layer 2 facing away from the substrate 1. The first resin layer 5 is located on the resin-filled surface of the substrate 1, and the side of the first resin layer 5 facing away from the substrate 1 is the second bonding surface. The resin-filled surface can be the upper surface of the substrate 1, and the resin fills the gaps between the circuits on the surface of the substrate 1 and the gaps around the chip 4. The second bonding material layer 6 is bonded to the second bonding surface, and the second support plate 7 is fixed to the side of the second bonding material layer 6 facing away from the first resin layer 5. The second bonding surface is the upper surface of the first resin layer 5. The second bonding material layer 6 is located between the second support plate 7 and the first resin layer 5, and the second support plate 7 is bonded to the side of the second bonding material layer 6 facing away from the first resin layer 5.

[0133] In the above-mentioned temporary bonding structure, the first support plate 3 and the second support plate 7 are used to provide support on both sides of the substrate 1 at the same time, so that the first support plate 3 and / or the second support plate 7 support the substrate 1 in the steps of attaching the chip 4, embedding the resin, and pre-curing. This reduces the overall warping of the substrate 1 caused by the structural asymmetry during the manufacturing process of the embedded chip substrate with the chip 4, and ensures that the substrate 1 is always in a low-warping state during the entire embedded chip substrate manufacturing process.

[0134] Furthermore, the first support plate 3 can be a double-sided copper-clad plate, a metal plate, a glass plate, or a ceramic plate, all of which have high rigidity. Similarly, the second support plate 7 can also be a double-sided copper-clad plate, a metal plate, a glass plate, or a ceramic plate. Of course, other types of plates can also be selected and are not limited here.

[0135] The thickness of the first support plate 3 can be greater than or equal to 0.2 mm. Specifically, the thickness of the first support plate 3 can be 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, etc. Furthermore, the thickness of the first support plate 3 can be greater than or equal to 0.5 mm, such as 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, etc. This can ensure the strength of the first support plate 3 and prevent the substrate 1 from warping during processing.

[0136] The thickness of the second support plate 7 can be greater than or equal to 0.2 mm. Specifically, the thickness of the second support plate 7 can be 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, etc. Furthermore, the thickness of the second support plate 7 can be greater than or equal to 0.5 mm, such as 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, etc. This can ensure the strength of the second support plate 7 and prevent the substrate 1 from warping during processing.

[0137] In a preferred embodiment, Figure 15 As shown, the first bonding material layer 2 may include a foam film a, a support film b, and a pressure-sensitive adhesive film c stacked in sequence, with the pressure-sensitive adhesive film c of the first bonding material layer 2 bonded to the substrate 1. After the chip 4 is placed in the accommodating cavity 1a, the chip 4 contacts the pressure-sensitive adhesive film c of the first bonding material layer 2. The foam film of the first bonding material layer 2 is bonded to the first support plate 3.

[0138] The second bonding material layer 6 may include a foaming film a, a support film b, and a pressure-sensitive adhesive film c stacked in sequence, and the pressure-sensitive adhesive film c of the second bonding material layer 6 is bonded to the first resin layer 5. The foaming film of the second bonding material layer 6 is bonded to the second support plate 7. Of course, the first bonding material layer 2 and the second bonding material layer 6 may also be single-layer film structures or other types of multi-layer film structures, which are not limited here.

[0139] In the above embodiment, both the first and second debonding steps involve first debonding the foam film a from the first and second support plates 3 and 7, and then removing the pressure-sensitive adhesive film c under vacuum adsorption conditions at a temperature of 80°C to 120°C. Preferably, the first pre-curing temperature is at least 10°C lower than the debonding temperature of the foam film a of the first bonding material layer 2. Specifically, the first pre-curing temperature is 10°C, 15°C, 20°C, 25°C, 30°C, or 35°C lower than the debonding temperature of the foam film a of the first bonding material layer 2. Preferably, the first pre-curing temperature can be 20°C lower than the debonding temperature of the first bonding material layer 2.

[0140] Of course, the debonding method between the first bonding material layer 2 and the substrate 1 and the debonding method between the second bonding material layer 6 and the first resin layer 5 can be the same or different. Specifically, the debonding method between the first bonding material layer 2 and the substrate 1 can be thermal debonding or laser debonding. The debonding method between the second bonding material layer 6 and the first resin layer 5 can also be thermal debonding or laser debonding. It should be noted here that if the debonding method between the first bonding material layer 2 and the substrate 1 and the second bonding material layer 6 are laser debonding, the first support plate 3 and the second support plate 7 should be transparent plates.

[0141] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0142] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A method for manufacturing an embedded chip substrate, characterized in that: Including steps: A substrate window is provided, wherein a cavity for accommodating the chip is provided on the substrate, and two surfaces of the substrate are respectively a first bonding surface and a resin embedding surface; a first temporary bonding, bonding a first bonding material layer to the first bonding surface, wherein a first supporting plate is fixed to a side of the first bonding material layer facing away from the substrate; Mounting the chip, placing the chip in the accommodating cavity; A first pressing and filling resin is performed, wherein the resin is pressed and filled on the resin filling surface of the substrate to form a first resin layer, and a first pre-curing is performed. The structure formed in this step is placed in a constant temperature environment of 130° C. to 150° C. and maintained for 25 minutes to 35 minutes to pre-cur the resin in the structure. The side of the first resin layer facing away from the substrate serves as the second bonding surface. Second temporary bonding, bonding a second bonding material layer to the second bonding surface, with a second support plate fixed to a side of the second bonding material layer facing away from the first resin layer; a first debonding step of debonding the first bonding material layer and the first resin layer to remove the first bonding material layer and the first support plate; Secondary pressing and embedding of resin, wherein the resin is pressed and embedded on the first bonding surface of the substrate to form a second resin layer, and a second pre-curing is performed to cure the resin in the structure formed in this step to more than 70%; a second debonding step of debonding the second bonding material layer to remove the second bonding material layer and the second support plate; Blind hole processing: opening blind holes on the upper and lower surfaces of the structure formed in the previous step; Circuit fabrication: processing circuits on the upper and lower surfaces of the structure formed by blind hole processing; Curing: Curing the resin layer in the structure formed by the circuit to more than 90%; Insulation layer processing: a resin insulation layer is provided on both the upper and lower surfaces of the structure formed in the curing step, and a third pre-curing is performed to cure the resin in the structure formed in this step to 70%-80%; Fabricating an intermediate circuit and an outer layer circuit, repeating the blind hole processing, circuit fabrication, curing steps and insulation layer processing steps N times, N ≥ 0, to form an N-layer intermediate circuit, and then repeating the blind hole processing, circuit fabrication and curing steps to form an outer layer circuit; Making a solder resist layer, and making a solder resist layer on the surface of the outer layer circuit; A coating is applied to the surface of the structure formed after the solder resist layer is formed.

2. The method for manufacturing an embedded chip substrate according to claim 1, wherein: After the first debonding, the following steps are further included: first cleaning, cleaning the first bonding surface; and / or, After the second debonding, the method further includes the step of: second cleaning, cleaning the second bonding surface.

3. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The first pre-curing cures the resin in the formed structure to more than 50%.

4. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The second pre-curing is specifically as follows: placing the structure formed in this step in a constant temperature environment of 170° C.-185° C. for 25 min-35 min to pre-curing the resin in the structure.

5. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The third pre-curing is specifically as follows: placing the formed structure in a constant temperature environment of 95° C.-105° C. for 25 min-35 min, and then placing it in a constant temperature environment of 170° C.-185° C. for 25 min-35 min.

6. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The curing specifically includes curing the resin in the structure to be formed to more than 90% in an environment of 180° C. or higher.

7. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The curing temperature of the first pre-curing is lower than the debonding temperature of the first bonding material layer; or The debonding temperature of the first bonding material layer is lower than the debonding temperature of the second bonding material layer.

8. The method for manufacturing an embedded chip substrate according to claim 1, wherein: The raw materials used in the first pressing and filling resin step, the second pressing and filling resin step and the insulation layer processing step are all ABF resin sheets, and the ABF resin sheet includes an ABF layer, an OPP film attached to the first side of the ABF layer and a PET film attached to the second side of the ABF layer.

9. The method for manufacturing an embedded chip substrate according to claim 8, wherein: The first resin embedding pressing step specifically comprises: removing the OPP film of the ABF resin sheet, and pressing the first side of the ABF resin sheet onto the resin embedding surface of the substrate to form a first resin layer, and performing a first pre-curing so that the resin in the structure formed in this step is cured to more than 50%, and the side of the first resin layer facing away from the substrate is the second bonding surface and retains the PET film; and / or, The second pressing and filling resin step is specifically to remove the OPP film of the ABF resin sheet, and press the first side of the ABF resin sheet onto the first bonding surface of the substrate to form a second resin layer, and perform a second pre-curing to cure the resin in the structure formed in this step to more than 70%, and the second resin layer retains the PET film.

10. A temporary bonding structure, wherein the temporary bonding structure is generated during the manufacturing process of the manufacturing method according to any one of claims 1 to 9, characterized in that: include: A substrate, wherein the substrate is provided with an accommodating cavity for accommodating the chip, and the two surfaces of the substrate are respectively a first bonding surface and a resin-filled surface; a chip, wherein the chip is disposed in the accommodating cavity; a first bonding material layer and a first supporting plate, wherein the first bonding material layer is bonded to the first bonding surface, and the first supporting plate is fixed to a side of the first bonding material layer facing away from the substrate; a first resin layer, the first resin layer being located on the resin-embedded surface of the substrate, the side of the first resin layer facing away from the substrate being a second bonding surface; A second bonding material layer and a second supporting plate, wherein the second bonding material layer is bonded to the second bonding surface, and the second supporting plate is fixed to a side of the second bonding material layer facing away from the substrate.

11. The temporary bonding structure according to claim 10, characterized in that: The first support plate and / or the second support plate is a double-sided copper-clad plate, a metal plate, a glass plate or a ceramic plate; and / or the thickness of the first support plate and / or the second support plate is greater than 0.2 mm.

12. The temporary bonding structure according to claim 10, wherein: The first bonding material layer includes a foaming film, a support film and a pressure-sensitive adhesive film stacked in sequence, and the pressure-sensitive adhesive film of the first bonding material layer is bonded to the substrate; and / or the second bonding material layer includes a foaming film, a support film and a pressure-sensitive adhesive film stacked in sequence, and the pressure-sensitive adhesive film of the second bonding material layer is bonded to the first resin layer.

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