A fast response fiber vertical organic electrochemical transistor and a preparation method thereof

Abstract

The present application belongs to the technical field of organic electrochemical transistors, and particularly relates to a fast-response fiber vertical organic electrochemical transistor and a preparation method thereof. The fast-response fiber vertical organic electrochemical transistor is prepared by winding a thin film source electrode on a curved surface of a fiber drain electrode to form a coaxial step configuration of the source-drain electrode structure, and then loading an organic semiconductor layer at the step to form a small-size vertical channel. The fiber organic electrochemical transistor has the characteristics of fast response speed and high transconductance value, and maintains stable performance in cycle switching, dynamic deformation and long-term immersion. Immunohistochemical analysis shows that the fiber organic electrochemical transistor has excellent biocompatibility. The fiber organic electrochemical transistor can realize real-time monitoring of the fast-changing electrocardio signal in the biological soft tissue, and is used for diagnosis and long-term management of heart diseases, thereby providing a powerful new tool for life science basic research and clinical diagnosis.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of organic electrochemical transistors, and particularly relates to a fast-response fiber vertical organic electrochemical transistor and a preparation method thereof. BACKGROUND

[0002] Flexible fiber sensors are known for their compact size and 360-degree flexibility, enabling minimally invasive implantation in living organisms and conforming to biological tissues. These advantages help them establish a small and stable interface with tissues, thus flexible fiber sensors have attracted extensive attention in the field of implantable devices. Among them, fiber organic electrochemical transistors are particularly suitable for implantation in living organisms for detection applications due to their high amplification, low operating voltage and ion-based working characteristics, and have been developed as biosensors for detection of various chemical substances. However, the slow response speed of fiber organic electrochemical transistors significantly limits their detection capability for rapidly changing signals, such as electro-physiological signals, including electroencephalogram, electrocardiogram, electromyogram, etc.

[0003] Improving the response speed usually requires reducing the channel size, and it is difficult to finely manufacture small-size channels on the curved surface of the fiber. Initially, the channel of the fiber organic electrochemical transistor is defined by the area of the semiconductor fiber infiltrated by the gel electrolyte, which is large and difficult to control, resulting in slow transistor response. Later, a well-defined channel was manufactured on the fiber organic electrochemical transistor using a manual mask technique, but the channel length is still in the millimeter level, making the transistor response time more than 100 ms, which still cannot meet the detection requirements for rapidly changing signals. Therefore, it is an urgent need to develop a fiber organic electrochemical transistor with a new structure to further reduce the channel size and accelerate the response.

[0004] In a vertical organic electrochemical transistor, the source and drain are stacked to form a staircase, and the channel is vertically connected to the source and drain. In this structure, the channel length corresponds to the thickness of the insulating layer between the electrodes, so it is easier to reduce and obtain a small-size channel. Currently, this transistor configuration is mainly applied to planar transistor devices, and there is a lack of development of fiber devices. Therefore, it is necessary to design a fiber-form vertical organic electrochemical transistor and a matching preparation method to introduce a compact vertical channel structure in the fiber organic electrochemical transistor, thereby improving its response speed to meet the detection requirements for rapidly changing physiological signals. SUMMARY

[0005] The purpose of the present application is to provide a fiber vertical organic electrochemical transistor with short response time, high transconductance value, strong stability and good biocompatibility, and a preparation method thereof, to realize long-term detection of rapidly changing physiological signals, such as electrocardiogram signals, etc.

[0006] The application provides a preparation method of a fast-response fiber vertical organic electrochemical transistor.

[0007] (1) preparing an initial source-drain fiber electrode; taking a flexible polymer fiber with a diameter of 10-500 μm as a substrate, depositing a conductive metal layer with a thickness of 1-200 nm as a drain electrode; taking a flexible polymer film tape with a thickness of 1-100 μm as a substrate, depositing a conductive metal layer with a thickness of 1-200 nm as a source electrode; then winding the source film tape on the surface of the drain fiber, and pressing the film tape and the fiber with a polymer elastomer to obtain the initial source-drain fiber electrode; wherein the source electrode and the drain electrode are coaxially arranged, and the polymer film tape is arranged between the source electrode and the drain electrode to prevent short circuit; at the tip, the source electrode and the drain electrode are arranged in a stepped manner;

[0008] Preferably, the diameter of the flexible polymer fiber is 10-100 μm; and the thickness of the flexible polymer film tape is 1-10 μm.

[0009] Preferably, the flexible polymer fiber is one of nylon, polyimide, acrylic, aramid, polyester, vinylon, spandex and polypropylene.

[0010] Preferably, the film substrate of the polymer film tape is one of polyester, polypropylene, polyethylene, polyvinyl chloride and polyimide, and the adhesive component is one of acrylate, rubber-based, silicone and epoxy resin.

[0011] Preferably, the conductive metal layer of the source electrode and the drain electrode is one or more of gold, silver, copper, aluminum, platinum, chromium and titanium, and the preparation method comprises one of thermal evaporation, magnetron sputtering and chemical reaction.

[0012] (2) preparing a source-drain fiber electrode with an organic semiconductor channel; dipping the above initial source-drain electrode in an organic semiconductor slurry to load an organic semiconductor layer with a thickness of 1-30 μm, and then performing annealing treatment at an annealing temperature of 80-180 ℃; then insulating the part other than the channel to obtain the source-drain fiber electrode with the organic semiconductor channel; wherein the stepped source-drain electrode is connected by the organic semiconductor layer; and the organic semiconductor layer constitutes a vertical channel.

[0013] Preferably, the thickness of the loaded organic semiconductor layer is 1-15 μm.

[0014] Preferably, the organic semiconductor is one of polythiophene, polypyrrole and polyaniline.

[0015] (3) Preparation of fiber gate; using carbon nanotube fiber with a diameter of 30-200 μm as the gate, insulating the area outside the tip of the gate;

[0016] Preferably, the diameter of the carbon nanotube fiber gate is 50-100 μm;

[0017] Preferably, the insulating layer is one of parylene, styrene-ethylene-butylene-styrene block copolymer, polyurethane, polydimethylsiloxane, polyethylene, polyvinyl chloride, silicone rubber, and ethylene-propylene rubber, and the preparation method includes one of vacuum vapor deposition, hot melt, drop coating, and dip coating;

[0018] Preferably, the carbon nanotube fiber gate can be further loaded with a surface modification layer, and the modification material includes one or more of polythiophene-based semiconductors, polypyrrole-based semiconductors, polyaniline-based semiconductors, platinum nanoparticles, gold nanoparticles, and copper nanoparticles, and the preparation method includes one or both of electrochemical deposition and chemical reaction;

[0019] (4) The source-drain fiber electrode and the fiber gate prepared above are integrated into a fast-response fiber vertical organic electrochemical transistor (i.e., an organic electrochemical transistor with a vertical channel structure) through a twisting process, which is a fiber structure with a diameter of 40-700 μm. Preferably, the diameter is 60-200 μm.

[0020] The fiber vertical organic electrochemical transistor prepared by the present application has excellent performance; can be used for real-time monitoring of rapidly changing electrocardio signals in biological soft tissues, for diagnosis and long-term management of heart diseases; has fast response (response time of 12 ms); has high transconductance value (16 mS at zero gate voltage); has good stability (performance change of no more than 10% after 500 cycles of pulse switching, 500 cycles of bending deformation with a bending radius of 2.5 mm, and 14 days of storage in a phosphate buffer at 37℃); and has excellent biocompatibility through immunohistochemical analysis, providing a powerful new tool for basic research in life sciences and clinical diagnosis. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is a preparation flowchart of the fast-response fiber vertical organic electrochemical transistor of the present application.

[0022] Figure 2 It is a real photo, detection mechanism schematic diagram, and morphology characterization of the fast-response fiber vertical organic electrochemical transistor. Among them, a is a real photo of the transistor, b is a detection mechanism schematic diagram (V G : gate voltage, V D : drain voltage, I DS: source-drain current), c is the initial source-drain electrode scanning electron micrograph, d is the source-drain electrode organic semiconductor channel scanning electron micrograph.

[0023] Figure 3 Characterization of the response time of the fast-response fiber vertical organic electrochemical transistor.

[0024] Figure 4 Characterization of the transfer characteristics of the fast-response fiber vertical organic electrochemical transistor.

[0025] Figure 5 Normalized transconductance value in the stability test of the fast-response fiber vertical organic electrochemical transistor, test conditions: pulse switching 500 times; bending radius 2.5 mm, bending 500 times; soaking in phosphate buffer at 37℃ for 14 days.

[0026] Figure 6 Amplification result of the fast-response fiber vertical organic electrochemical transistor to the original analog electrocardiogram waveform.

[0027] Figure 7 The fast-response fiber vertical organic electrochemical transistor is implanted into the rat chest subcutaneously, and the electrocardiogram of the acute atrioventricular block model rat is detected and diagnosed. Among them, a is the typical electrocardiogram waveform recorded by the rat in the normal state and the atrioventricular block state, respectively, b is the statistical comparison of the RR interval in the electrocardiogram waveform of the rat in the normal state and the atrioventricular block state.

[0028] Figure 8 The fast-response fiber vertical organic electrochemical transistor is implanted into the rat chest subcutaneously, and the long-term stability of the rat electrocardiogram. Among them, a is the typical electrocardiogram waveform recorded by the rat on the first day and the seventh day after subcutaneous implantation, b is the statistical comparison of the electrocardiogram waveform amplitude of the rat on the first day and the seventh day after subcutaneous implantation.

[0029] Figure 9 The fast-response fiber vertical organic electrochemical transistor is implanted into the rat chest subcutaneously for one week, and the results of immunofluorescence staining and hematoxylin-eosin staining are compared between the implanted group and the non-implanted control group. DETAILED DESCRIPTION

[0030] The application will be described in detail below with reference to the accompanying drawings and specific implementation cases, to help further understand the application, but the specific details of the implementation cases are only for illustrating the application, and do not represent all the technical solutions under the concept of the application, therefore, should not be understood as limiting the general technical solution of the application, some non-essential additions and modifications that do not deviate from the concept of the application, such as simple replacement or substitution of technical features with the same or similar technical effects, all belong to the protection scope of the application.

[0031] Example 1, Preparation of a fast-response fiber vertical organic electrochemical transistor, its morphology and electrical performance characterization:

[0032] Step 1: Preparation of an initial source-drain fiber electrode. A nylon filament with a diameter of 75 pm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially evaporated by thermal evaporation as the drain electrode. A polyethylene terephthalate (PET) film tape (adhesive: acrylate) with a thickness of 3 pm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially evaporated by thermal evaporation as the source electrode. Then, the source film tape was attached to the curved surface of the drain fiber and folded to wrap the fiber under a certain tension. After that, two pieces of polydimethylsiloxane elastomer were used to press the film tape and the fiber tightly, and the excess tape part was cut off to obtain the initial source-drain fiber electrode.

[0033] Step 2: Preparation of organic semiconductor slurry. In 10 mL of poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) solution, 1 mL of ethylene glycol was added to improve conductivity, 94 pL of 3-(2,3-epoxypropoxy)propyl trimethoxysilane was used for crosslinking, and 6 pL of fluorocarbon surfactant was used to reduce surface tension. Then, the above mixed solution was concentrated to 40% of the initial mass in an oil bath at 100°C to improve the film-forming property of the slurry.

[0034] Step 3: Preparation of a source-drain fiber electrode with an organic semiconductor channel. The initial source-drain fiber electrode was dipped in the concentrated PEDOT:PSS slurry once at a speed of 300 mm / min to form an organic semiconductor channel with a thickness of 3 pm. After coating, the source-drain fiber electrode was annealed in an argon atmosphere at 140°C for 1 hour, and then coated with a styrene-ethylene-butylene-styrene block copolymer (SEBS) solution (10 wt%, 3 pL) to insulate the area outside the channel to obtain a source-drain fiber electrode with an organic semiconductor channel. Soak in deionized water to remove low molecular weight compounds.

[0035] Step 4: Preparation of the gate of the fast-response fiber vertical organic electrochemical transistor. A carbon nanotube fiber with a diameter of 100 pm was used, and the fiber tip was covered with a paper tape. It was placed in a vacuum vapor deposition system, about 4 g of raw material was added, the cracking temperature was set to 690°C, the rule tube heating temperature was 135°C, the target pressure was 17 mT, and the vacuum was pumped to about 10 mT. Parylene was deposited on the carbon nanotube fiber. After the tape was removed, the carbon nanotube fiber with an exposed tip was obtained and used as the fiber gate.

[0036] Step 5: Preparation of a fast-response fiber vertical organic electrochemical transistor. The source-drain fiber electrode prepared above and the gate were twisted together to finally obtain a fast-response fiber vertical organic electrochemical transistor. The organic electrochemical transistor is a fiber structure with a diameter of 175 pm.

[0037] The organic semiconductor channel connects the coaxial step arrangement of the source and the drain vertically, proving that the fast-response fiber organic electrochemical transistor belongs to a vertical organic electrochemical transistor. See Figure 2

[0038] In Figure 3 , the response time of the fast-response fiber vertical organic electrochemical transistor is 12 ms, which is comparable to that of a planar organic electrochemical transistor, which has been proven to be applicable to electrocardiogram recording (Science 2023, 381, 686-693.). Therefore, the fast-response fiber vertical organic electrochemical transistor has a fast enough response capability to meet the requirements of electrocardiogram waveform recording.

[0039] In Figure 4 , the fast-response fiber vertical organic electrochemical transistor has a transconductance value of 16 mS at zero gate voltage, which avoids affecting biological tissues, and a high transconductance value ensures sufficient signal amplification level.

[0040] In Figure 5 , the normalized transistor transconductance value changes by no more than 10% under the conditions of 500 times of pulse switching, 500 times of bending with a bending radius of 2.5 mm, and 14 days of immersion in phosphate buffer at 37°C. Therefore, the fast-response fiber vertical organic electrochemical transistor has good stability and can meet the requirements of long-term implantation detection in vivo.

[0041] Example 2, preparation of a fast-response fiber vertical organic electrochemical transistor, and simulation of electrocardiogram signal test:

[0042] Step 1: Preparation of the initial source-drain fiber electrode. A nylon wire with a diameter of 50 μm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially deposited by thermal evaporation as the drain. A polyethylene terephthalate (PET) film tape (adhesive: acrylate) with a thickness of 3 μm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially deposited by thermal evaporation as the source. Then, the source film tape was attached to the curved surface of the drain fiber and folded to wrap the fiber under a certain tension. After that, two pieces of polydimethylsiloxane elastomer were used to press the film tape and the fiber tightly, and the excess tape part was cut off to obtain the initial source-drain fiber electrode.

[0043] ​Step 2: Preparation of organic semiconductor slurry. In 10 mL of poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) solution, 1 mL of ethylene glycol was added to improve conductivity, 94 μL of 3-(2,3-epoxypropoxy)propyl trimethoxysilane was used for cross-linking, 6 μL of fluorocarbon surfactant was added to reduce surface tension, and then the above mixed solution was concentrated to 40% of the original mass at 100°C in an oil bath to improve the film-forming property of the slurry.

[0044] Step 3: Preparation of source-drain fiber electrode with organic semiconductor channel. The original source-drain fiber electrode was dipped in the concentrated PEDOT:PSS slurry once at a speed of 300 mm / min to form an organic semiconductor channel with a thickness of 3 μm. After coating, the source-drain fiber electrode was annealed at 140°C in an argon atmosphere for 1 hour, and then coated with a solution of styrene-ethylene-butylene-styrene block copolymer (SEBS) (10 wt%, 3 μL) to insulate the area other than the channel to obtain a source-drain fiber electrode with an organic semiconductor channel. Soaking in deionized water to remove low molecular weight compounds.

[0045] Step 4: Preparation of gate of fast-response fiber vertical organic electrochemical transistor. A carbon nanotube fiber with a diameter of 100 μm was used, and the fiber tip was covered with a paper tape. Placed in a vacuum vapor deposition system, about 4 g of raw material was added, the cracking temperature was set to 690°C, the rule tube heating temperature was 135°C, the target pressure was 17 mT, and the vacuum was pumped to about 10 mT to deposit poly(p-xylylene) on the carbon nanotube fiber. After the tape was removed, a carbon nanotube fiber with an exposed tip was obtained and used as a fiber gate.

[0046] Step 5: Preparation of fast-response fiber vertical organic electrochemical transistor. The source-drain fiber electrode prepared above was twisted with the gate to finally obtain a fast-response fiber vertical organic electrochemical transistor. The organic electrochemical transistor is a fiber structure with a diameter of 150 μm.

[0047] Step 6: Test of simulating original electrocardiogram waveform. The above transistor was immersed in a 0.01 M PBS solution, the source was grounded, the drain was set to a bias of -0.6 V, and then a simulated electrocardiogram waveform was generated at the gate using a semiconductor tester, and the source-drain current change was detected.

[0048] In Figure 6 , the fast-response fiber vertical organic electrochemical transistor amplified the original simulated electrocardiogram waveform, showing a clear and real-time electrocardiogram waveform with a signal-to-noise ratio of 20.6 dB. Therefore, the transistor has excellent electrocardio signal amplification capability.

[0049] Example 3, preparation of a fast-response fiber vertical organic electrochemical transistor for body electrocardio signal detection and biocompatibility test:

[0050] Step 1: Preparation of initial source-drain fiber electrode. A nylon wire with a diameter of 75 pm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially deposited by thermal evaporation as the drain electrode. A polyethylene terephthalate (PET) film tape (adhesive: acrylate) with a thickness of 3 pm was used as the substrate, and a chromium layer (5 nm) and a gold layer (100 nm) were sequentially deposited by thermal evaporation as the source electrode. Subsequently, the source film tape was attached to the curved surface of the drain fiber and folded to wrap the fiber under a certain tension. Then, the film tape and the fiber were pressed tightly using two pieces of polydimethylsiloxane elastomer, and the excess tape part was cut off to obtain the initial source-drain fiber electrode.

[0051] Step 2: Preparation of organic semiconductor slurry. In 10 mL of poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) solution, 1 mL of ethylene glycol was added to improve conductivity, 94 pL of 3-(2,3-epoxypropoxy)propyl trimethoxysilane was used for crosslinking, and 6 pL of fluorocarbon surfactant was added to reduce surface tension. Then, the above mixed solution was concentrated to 40% of the initial mass in an oil bath at 100°C to improve the film-forming property of the slurry.

[0052] Step 3: Preparation of source-drain fiber electrode with organic semiconductor channel. The initial source-drain fiber electrode was dipped in the concentrated PEDOT:PSS slurry once at a speed of 300 mm / min to form an organic semiconductor channel with a thickness of 3 pm. After coating, the source-drain fiber electrode was annealed at 140°C in an argon atmosphere for 1 hour, and then coated with a styrene-ethylene-butylene-styrene block copolymer (SEBS) solution (10 wt%, 3 pL) to insulate the area other than the channel to obtain a source-drain fiber electrode with an organic semiconductor channel. Soak in deionized water to remove low molecular weight compounds.

[0053] Step 4: Preparation of gate electrode for fast-response fiber vertical organic electrochemical transistor. A carbon nanotube fiber with a diameter of 75 pm was used, and a paper tape was used to cover the fiber tip. Place it in a vacuum vapor deposition system, add about 4 g of raw material, set the cracking temperature to 690°C, the rule pipe heating temperature to 135°C, and the target pressure to 17 mT. Vacuum to about 10 mT, and deposit poly(p-xylylene) on the carbon nanotube fiber. After removing the tape, a carbon nanotube fiber with an exposed tip is obtained and used as a fiber gate electrode.

[0054] Step 5: Preparation of fast-response fiber vertical organic electrochemical transistor. The source-drain fiber electrode prepared above and the gate electrode were twisted together to finally obtain a fast-response fiber vertical organic electrochemical transistor. The organic electrochemical transistor is a fiber structure with a diameter of 150 pm.

[0055] Step 6: In vivo application of the fast-response fiber-optic vertical organic electrochemical transistor. The fast-response fiber-optic vertical organic electrochemical transistor was implanted subcutaneously into the chest of a rat using a syringe. The source of the transistor was grounded, and the drain was biased at -0.6V. Changes in source-drain current were monitored.

[0056] Acute atrioventricular block was induced in rats by intravenous injection of 1 mL of physiological saline solution containing 40 mg of diltiazem hydrochloride. Figure 7 In this study, a transistor detected differences in electrocardiogram waveforms in rats with an acute atrioventricular block model under normal and atrioventricular block conditions. Therefore, this transistor has diagnostic capabilities for heart disease.

[0057] exist Figure 8 In this study, after the fast-response fiber vertical organic electrochemical transistor was implanted subcutaneously in the chest of rats, the peak value of the electrocardiogram on the seventh day was not significantly different from that on the first day, indicating that it has excellent long-term in vivo working stability.

[0058] exist Figure 9 In this study, after fast-response fiber vertical organic electrochemical transistors were implanted subcutaneously in the chest of rats, immunofluorescence staining results showed no obvious inflammatory response compared with the control group without implantation. Hematoxylin-eosin staining results proved that the fiber transistors were well integrated with the subcutaneous tissue.

[0059] The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made without departing from the spirit and principle of the present invention shall be considered equivalent substitutions and shall be included within the protection scope of the present invention.

Claims

1. A method for fabricating a fast response fiber vertical organic electrochemical transistor, characterized in that, The thin film source electrode is wound on the curved surface of the fiber drain electrode to form a coaxial stepped source-drain electrode structure; an organic semiconductor layer is loaded at the step to form a small size vertical channel, and a fast response fiber vertical organic electrochemical transistor is prepared; the specific steps are as follows: (1) preparing an initial source-drain fiber electrode: taking a flexible high polymer fiber with a diameter of 10-500 μm as a substrate, depositing a conductive metal layer with a thickness of 1-200 nm as a drain electrode; taking a flexible high polymer thin film tape with a thickness of 1-100 μm as a substrate, depositing a conductive metal layer with a thickness of 1-200 nm as a source electrode; then winding the source thin film tape on the surface of the drain fiber, and pressing the thin film tape and the fiber with a polymer elastomer to obtain an initial source-drain fiber electrode; (2) preparing a source-drain fiber electrode with an organic semiconductor channel: dipping the above initial source-drain electrode in an organic semiconductor slurry to load an organic semiconductor layer with a thickness of 1-30 μm, and then performing annealing treatment at an annealing temperature of 80-180 ℃; then insulating the part except the channel to obtain a source-drain fiber electrode with an organic semiconductor channel; (3) preparing a fiber gate: using a carbon nanotube fiber with a diameter of 30-200 μm as a gate, and insulating the area outside the tip of the gate; (4) preparing an integrated fast response fiber vertical organic electrochemical transistor by twisting the above prepared source-drain fiber electrode and fiber gate, and the diameter is 40-700 μm.

2. The production method according to claim 1, characterized by, The flexible high polymer fiber in step (1) is one of nylon, polyimide, acrylic, aramid, polyester, vinylon, spandex and polypropylene.

3. The preparation method according to claim 1, characterized in that, The thin film substrate of the high polymer thin film tape in step (1) is one of polyester, polypropylene, polyethylene, polyvinyl chloride and polyimide, and the adhesive component is one of acrylate, rubber-based, silicone and epoxy resin.

4. The method of claim 1, wherein, The conductive metal layer of the source and drain in step (1) is one or more of gold, silver, copper, aluminum, platinum, chromium and titanium, and the preparation method is one of thermal evaporation, magnetron sputtering and chemical reaction.

5. The preparation method according to claim 1, characterized in that, The organic semiconductor in step (1) is one of polythiophene, polypyrrole and polyaniline.

6. The method of claim 1, wherein, The insulating layer used for insulation in step (2) is one of parylene, styrene-ethylene-butylene-styrene block copolymer, polyurethane, polydimethylsiloxane, polyethylene, polyvinyl chloride, silicone rubber and ethylene-propylene rubber, and the preparation method is one of vacuum vapor deposition, hot melting, drop coating and dipping.

7. The preparation method according to claim 1, characterized in that, The carbon nanotube fiber gate in step (1) is further loaded with a surface modification layer, and the modification material is one or more of polythiophene semiconductor, polypyrrole semiconductor, polyaniline semiconductor, platinum nanoparticles, gold nanoparticles and copper nanoparticles, and the modification method is one or both of electrochemical deposition and chemical reaction.

8. The fast response fiber vertical organic electrochemical transistor prepared by the preparation method of any one of claims 1-7.

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