Completely asymmetric PVD magnetron and coating test method
By designing a completely asymmetric magnetron in PVD magnetron sputtering technology, the problem of inconsistent coverage of large-size wafer micropores and trench side wall steps is solved, and a more uniform coating effect is achieved.
Patent Information
- Application Number
- CN202411422142.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-12
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2044-10-12
AI Technical Summary
When existing PVD magnetron sputtering technology fills large-sized wafer micropores and trenches, it is easy to have inconsistent coverage of side wall steps, resulting in "edge biasing".
A completely asymmetric PVD magnetron is designed, the magnet is completely arranged on one side of the magnetron, and the coating operation is carried out in conjunction with the movement of the lower mounting plate, and the coverage of the side wall steps is adjusted by adjusting the position of the magnetron assembly.
It effectively improves the problem of inconsistent step coverage of the two side walls of micropores and grooves, solves the "edge bias phenomenon", and improves the uniformity and coverage of the coating.
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Figure CN118957526B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of magnetron sputtering, in particular to a completely asymmetric PVD magnetron and a coating test method. Background Art
[0002] Magnetron sputtering is a type of physical vapor deposition (PVD). In layered metal contacts or interconnect structures, it is necessary to deposit a uniform but thin adhesion layer, diffusion barrier layer, etc. at the bottom and sidewalls of micropores and trenches. As device size shrinks, the aspect ratio of contact holes and trenches increases, and the difficulty of filling micropores and trenches increases sharply.
[0003] The atoms sputtered from the target surface move in different directions and change constantly due to scattering. Especially in through holes and trenches with steep steps, pinch-off or unfillable voids may even form. In practical applications, we need to deposit a uniform and continuous film in the microholes, and the coverage of the sidewalls and bottom steps should be as high as possible.
[0004] However, when the metal film crosses the steps on the substrate surface, it often deviates from the ideal situation. Either the step coverage of the sidewall and the bottom is low, or the step coverage of the left and right sidewalls is high on one side and very low on the other side. Moreover, this situation of inconsistent step coverage of the left and right sidewalls occurs in almost all existing PVD hole filling processes.
[0005] The reason for this "biased phenomenon" of the sidewall step coverage is that the physical center of the magnetron distribution on the back of the target is almost the same as the center of the target, and the magnet rotates at a constant speed, so the magnetic field distribution on the target surface is also uniformly distributed along the center of the target. Taking the direction along the micropore and the target normal as the dividing line, the width area of the target on the left and right sides of the target normal above the micropore is very different.
[0006] For filling holes in the edge area of large-sized wafers, due to the presence of sidewall steps of the wafer microholes, there is a large difference in the number of target atoms that can be sputtered into the holes on both sides of the sidewalls, which ultimately leads to a large difference in the sidewall step coverage on both sides of the microhole or groove. Summary of the invention
[0007] In view of the shortcomings of the prior art, the present invention provides a completely asymmetric PVD magnetron, which completely arranges the magnet on one side of the magnetron, cooperates with the movement of the lower mounting plate to perform multiple coating operations, and can adjust the step coverage of the two side walls of the groove to solve the problem of "side deviation phenomenon". The technical solution adopted by the present invention is:
[0008] The present invention first proposes a completely asymmetric PVD magnetron, comprising:
[0009] An upper mounting plate, wherein the center of the circle of the upper mounting plate is configured as a rotation center, and two straight lines passing through the diameter of the upper mounting plate are respectively configured as a first straight line and a second straight line, and the first straight line and the second straight line are perpendicular to each other;
[0010] A lower mounting plate, located on one side of the first straight line and mirror-symmetrical with respect to the second straight line;
[0011] The magnetic control assembly includes a plurality of magnets, which are respectively arranged on the side of the lower mounting plate close to the upper mounting plate; in two adjacent magnets, the magnetic pole at one end of one of the magnets is opposite to the magnetic pole at one end of the other magnet;
[0012] A counterweight block, located on the other side of the first straight line and connected to the upper mounting plate, wherein the counterweight block is mirror-symmetrical with respect to the second straight line;
[0013] A moving member, used for driving the lower mounting plate to move along the second straight line so that the magnetron assembly moves closer to or farther from the rotation center;
[0014] A fastener is used to fix the relative position between the upper mounting plate and the lower mounting plate.
[0015] Furthermore, the moving part comprises:
[0016] An upper slider, arranged on the upper mounting plate;
[0017] The lower sliding block is arranged on the lower mounting plate and can move along the second straight line.
[0018] Furthermore, the moving part further comprises:
[0019] A plurality of grooves are arranged at intervals on the lower slider, and any of the grooves extends along a first straight line;
[0020] The paddle is arranged on the upper slider and can enter into one of the grooves as the lower slider moves.
[0021] Furthermore, a receiving space is formed between the upper slider and the lower slider, and a rolling element is rotatably arranged in the receiving space. When the lower slider slides, the rolling element rolls along the inner wall of the upper slider or the inner wall of the lower slider.
[0022] Furthermore, the rolling element is a roller, and the rotating shaft of the rolling element is connected to the upper slider or the lower slider.
[0023] Furthermore, the moving part further comprises:
[0024] A step is arranged at the end of the lower sliding block and outside the accommodating space, and the groove is arranged on the step.
[0025] Furthermore, a bracket is provided on the upper sliding block, and the paddle is configured at an end of the bracket.
[0026] Furthermore, the fastener is a bolt, and a waist hole is provided on the upper mounting plate and / or the lower mounting plate, the waist hole extends along a second straight line, and the fastener passes through the waist hole.
[0027] Further, the shape of the lower mounting plate is one of a double hook shape, a crescent shape, and a semicircle shape;
[0028] The area of the crescent-shaped lower mounting plate is x, the area of the double-hook-shaped lower mounting plate is y, and the area of the semicircular lower mounting plate is z, wherein x<y<z;
[0029] The number of magnets on the crescent-shaped lower mounting plate is r, the number of magnets on the double-hook-shaped lower mounting plate is s, and the number of magnets on the semicircular lower mounting plate is t, wherein r<s<t.
[0030] The present invention also proposes a coating test method, which is implemented by using the above-mentioned fully asymmetric PVD magnetron:
[0031] For the first time, a double-hook lower mounting plate was used to perform the first coating operation using a completely asymmetric PVD magnetron to check whether the wafer microvias were offset.
[0032] If it is not biased, the test ends;
[0033] If there is an outward deflection, move the magnetron assembly outward, repeat the coating operation and check whether it is outward deflected until there is no outward deflection, and the test is over;
[0034] If the magnetron assembly still deviates outward after being moved outward to the limit position, replace the crescent-shaped lower mounting plate, repeat the coating operation and check whether it deviates outward;
[0035] If the external deflection still exists, move the magnetron assembly outward, repeat the coating operation and check whether it is external deflection, until there is no external deflection, and the test is over;
[0036] If there is inward deviation, move the magnetron assembly inward, repeat the coating operation and check whether it is inward deflected until there is no inward deviation, and the test is over;
[0037] If the magnetron assembly still deviates inward after being moved inward to the limit position, replace the semicircular lower mounting plate, repeat the coating operation and check whether it deviates inward.
[0038] If the inward deviation still exists, move the magnetron assembly inward, repeat the coating operation and check whether it is inwardly deviated until it is no longer inwardly deviated, and the test is over.
[0039] Advantages of the present invention:
[0040] By utilizing the fact that the lower mounting plate and the magnetron assembly are only present on half of the upper mounting plate and only the counterweight is provided on the other half, a completely asymmetric distribution of the magnetron assembly (relative to the first straight line) is achieved. Thus, the physical center of the magnetron distribution is closer to the normal of the microhole relative to the center of the target material. The position of the magnetron assembly is moved inward or outward by a moving part to adjust the step coverage of the inner and outer side walls. After repeated coating operations, the problem of "biased edge phenomenon" is effectively improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0041] Figure 1 It is a schematic diagram of the magnetron sputtering process in the prior art.
[0042] Figure 2 Schematic diagram of step coverage in wafer microvias.
[0043] Figure 3 This is a structural diagram from the first perspective of the present invention.
[0044] Figure 4 This is a structural diagram from a second viewing angle of the present invention.
[0045] Figure 5 It is a plan view of the present invention.
[0046] Figure 6 It is a plan cross-sectional view of the present invention.
[0047] Figure 7 It is a structural diagram of the moving part in the present invention.
[0048] Figure 8 This is a structural diagram of a magnetron using a crescent-shaped lower mounting plate.
[0049] Fig. 9 This is a structural diagram of a magnetron using a semicircular lower mounting plate.
[0050] Fig.10 Flow chart of the coating test method.
[0051] In the figure: 100-upper mounting plate, 200-lower mounting plate, 210-extension arm, 300-magnet, 400-counterweight, 500-moving part, 510-upper slider, 520-lower slider, 521-groove, 522-step, 530-paddle, 540-accommodating space, 550-rolling part, 560-bracket, 600-fastener, 700-waist hole, 800-rotating part. DETAILED DESCRIPTION
[0052] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0053] In the prior art, the distribution of the magnetron on the back of the target is as shown in the attached figure. Figure 1 As shown, the physical center of the magnetron assembly is almost coincident with the center of the target, and the magnet rotates at a constant speed, so the magnetic field distribution on the target surface is also around the center of the target. Taking the direction along the microhole and the normal line of the target as the dividing line, for filling holes in the edge area of a large-sized wafer, due to the presence of the sidewall steps of the wafer microhole (or groove), the number of target atoms that can be sputtered into the hole on both sides of the sidewall is quite different, which ultimately leads to a large difference in the sidewall step coverage on both sides of the microhole (or groove).
[0054] For an introduction to step coverage, please refer to the attached Figure 2 , step coverage is defined as: the ratio of the sidewall film thickness or bottom film thickness to the film thickness at the top plane. a is the film thickness at the top plane, b is the bottom film thickness, c is the upper sidewall film thickness, d is the middle sidewall film thickness, and e is the lower sidewall film thickness. Then b / a is the bottom step coverage, c / a is the upper sidewall step coverage, d / a is the middle sidewall step coverage, and e / a is the lower sidewall step coverage.
[0055] Therefore, in the metal film sputtering process for large-size wafers, when the thin film deposited by the sputtering target is on the substrate of the micropore (or groove), the step coverage of the left and right side walls of the micropore tends to be one large and one small, and the step coverage is less than 20%.
[0056] For requirements of high step coverage at the micro-holes (or trenches) at the edge of large-sized wafers and small step coverage differences on both sides, please refer to the attached Figure 3-Figure 6The present invention first provides a completely asymmetric PVD magnetron, comprising: an upper mounting disk 100, wherein the center of the circle of the upper mounting disk 100 is configured as a rotation center, and two straight lines passing through the diameter of the upper mounting disk 100 are respectively configured as a first straight line and a second straight line, wherein the first straight line and the second straight line are perpendicular to each other; the upper mounting disk 100 is disk-shaped, and its rotation center coincides with the rotation center of the target material; a lower mounting disk 200, which is located on one side of the first straight line and is mirror-symmetrical with respect to the second straight line; a magnetron assembly, comprising a plurality of magnets 300, which are respectively arranged on the lower mounting disk 200 near the upper mounting disk 100; in two adjacent magnets 300, the magnetic pole at one end of one of the magnets 300 is opposite to the magnetic pole at one end of the other magnet 300; a counterweight 400 is located on the other side of the first straight line and connected to the upper mounting plate 100, and the counterweight 400 is mirror-symmetrical with respect to the second straight line; a moving member 500 is used to drive the lower mounting plate 200 to move along the second straight line so that the magnetic control assembly approaches or moves away from the rotation center; a fastener 600 is used to fix the relative position between the upper mounting plate 100 and the lower mounting plate 200.
[0057] It should be noted that the magnet 300 of the present application is only connected to the lower mounting plate 200 and does not contact the upper mounting plate 100; the upper and lower ends of the magnet 300 of the present application are magnetic poles, and if the upper end of one of the magnets 300 is an N pole and the lower end is an S pole, then the upper end of the other magnet 300 is an S pole and the lower end is an N pole. The more magnets there are in the magnetron assembly, the stronger the magnetic field generated by the magnetron assembly, and the faster the bombardment speed of the target atoms; the working principle of PVD has been disclosed in the prior art and will not be repeated here.
[0058] It should be noted that a rotating part 800 needs to be arranged on the upper surface of the upper mounting disk 100, which is fixed to a driving part such as a motor so that the upper mounting disk 100 can rotate around the rotation center, the target center coincides with the rotation center, and the magnetron assembly and the lower mounting disk 200 rotate at the same speed. Since half of the upper mounting disk 100 corresponds to the magnetron assembly and the other half corresponds to the counterweight 400, the magnetron formed is called a fully asymmetric PVD magnetron, and the magnetic field distribution on the target surface deviates from the target center and is closer to the micropores or grooves.
[0059] In view of the problem of large difference in step coverage between the left and right side walls, the specific adjustment operation is as follows: operate the fastener 600 to release the restraint between the upper mounting disk 100 and the lower mounting disk 200, move the lower mounting disk 200 along the second straight line, and the magnetic control component moves closer to or away from the rotation center as the lower mounting disk 200 moves, thereby adjusting the position of the magnetic field, that is, adjusting the physical center of the magnetic control component to make it infinitely close to the dividing line (that is, the direction of the normal line of the microhole and the target material), and re-operate the fastener 600 to fix the upper mounting disk 100 and the lower mounting disk 200.
[0060] In one embodiment, please refer to the attached Figure 2 , Attachment Figure 3 , Attachment Figure 4 , Attachment Figure 5 The moving member 500 includes: an upper slider 510, which is arranged on the upper mounting plate 100; a lower slider 520, which is arranged on the lower mounting plate 200 and can move along the second straight line; the lower slider 520 slides along the second straight line and drives the lower mounting plate 200 to move along the second straight line, thereby adjusting the position of the physical center of the magnetron assembly.
[0061] In a specific embodiment, the upper slider 510 and the lower slider 520 are slidably connected via a slide rail or a slide groove; since the lower mounting plate 200 can only move along the second straight line, the slide rail or the slide groove can only be arranged along the second direction; by adding a sliding connection structure between the upper slider 510 and the lower slider 520, the movement stability of the lower slider 520 can be improved, and the movement path of the lower slider 520 can be further limited.
[0062] In this embodiment, the moving member 500 also includes: a plurality of grooves 521 arranged at intervals on the lower slider 520, and any of the grooves 521 extends along the first straight line; a paddle 530, which is arranged on the upper slider 510 and can enter one of the grooves 521 as the lower slider 520 moves.
[0063] It should be noted that the distance between two adjacent grooves 521 is the minimum movement amount of the lower mounting plate 200 (i.e., the magnetron assembly). When the lower mounting plate 200 is moved along the second straight line, the paddle 530 will move between different grooves 521. Therefore, the movement amount parameter of the lower mounting plate 200 can be quickly obtained according to the number of times the paddle 530 moves, thereby improving the adjustment accuracy of the magnetron assembly.
[0064] In this embodiment, in order to control the relative movement speed between the upper mounting disk 100 and the lower mounting disk 200 and increase the friction force, an accommodating space 540 is formed between the upper slider 510 and the lower slider 520, and a rolling member 550 is rotatably arranged in the accommodating space 540. When the lower slider 520 slides, the rolling member 550 rolls along the inner wall of the upper slider 510 or the inner wall of the lower slider 520. The contact between the rolling member 550 and the upper slider 510 and the lower slider 520 is used to increase the static friction force to avoid the lower mounting disk 200 from moving too much and affecting the adjustment result. The accommodating space 540 hides the rolling member 550, reduces the space occupied by the moving member 500, and avoids interference with the arrangement of the magnetic control component.
[0065] In a specific embodiment, the rolling member 550 is a roller, and the rotating shaft of the rolling member 550 is connected to the upper slider 510 or the lower slider 520. For example, when the rotating shaft of the roller is connected to the upper slider 510, the cylindrical surface of the roller contacts the inner bottom surface of the lower slider 520, so that when the lower slider 520 moves along the second straight line, the roller rolls relative to the lower slider 520 and rotates with its own rotating shaft as the rotation center, but the relative position between the roller and the upper slider 510 remains unchanged; for another example, when the rotating shaft of the roller is connected to the lower slider 520, the cylindrical surface of the roller contacts the inner top surface of the upper slider 510, so that when the lower slider 520 moves along the second straight line, the roller rolls relative to the upper slider 510 and rotates with its own rotating shaft as the rotation center, but the relative position between the roller and the lower slider 520 remains unchanged.
[0066] In another specific embodiment, the rolling element 550 is a gear, and the rotating shaft of the gear is connected to the upper slider 510 or the lower slider 520. For example, when the rotating shaft of the gear is connected to the upper slider 510, it is necessary to arrange a rack or tooth groove meshing with the gear on the inner bottom surface of the lower slider 520, so that when the lower slider 520 moves along the second straight line, the gear moves along the rack or tooth groove on the lower slider 520, and rotates with its own rotating shaft as the rotation center, but the relative position between the gear and the upper slider 510 remains unchanged; for another example, when the rotating shaft of the gear is connected to the lower slider 520, it is necessary to arrange a rack or tooth groove meshing with the gear on the inner top surface of the upper slider 510, so that when the lower slider 520 moves along the second straight line, the gear moves relative to the rack or tooth groove on the upper slider 510, and rotates with its own rotating shaft as the rotation center, but the relative position between the gear and the lower slider 520 remains unchanged.
[0067] Furthermore, in the upper slider 510 or the lower slider 520 corresponding to the rotating shaft of the rolling element 550, the rotating shaft can be installed by punching holes or by bearing connection, and a pin can be used to limit the axial displacement of the rotating shaft.
[0068] In this embodiment, the moving member 500 further includes: a step 522, which is arranged at the end of the lower slider 520 and outside the accommodation space 540, and the groove 521 is arranged on the step 522. By arranging the installation position of the groove 521 outside the lower slider 520, the part of the paddle 530 entering the groove 521 is exposed outside the lower slider 520, which does not affect the movement of the rolling member 550 in the accommodation space 540, and the number of times the paddle 530 is moved can be intuitively observed, thereby improving the position accuracy of the magnetic control component.
[0069] In a specific embodiment, steps 522 are respectively provided at both ends of the lower sliding block 520 along the second straight line, and the positioning effect of the lower mounting plate 200 is improved by utilizing the cooperation of the two groups of grooves 521 and the paddles 530. Only when the two groups of paddles 530 are moved to the next groove 521 in the same direction, it indicates that the lower mounting plate 200 is moved into place, thus avoiding the situation of movement jamming.
[0070] In this embodiment, a bracket 560 is disposed on the upper slider 510 , and the paddle 530 is disposed at the end of the bracket 560 . Specifically, brackets 560 are disposed on both sides of the rolling element 550 , and both ends of any bracket 560 extend out of the upper mounting plate 100 .
[0071] In a specific embodiment, the bracket 560 is detachably connected to the upper slider 510 by common fixing parts such as bolts and screws; therefore, when the paddle 530 is deformed or damaged, only the bracket 560 needs to be replaced, and there is no need to remove the connected upper slider 510 and the upper mounting plate 100.
[0072] Furthermore, the rotating shaft of the rolling element 550 can also be installed on the bracket 560 and can be assembled and disassembled together with the bracket 560 .
[0073] In this embodiment, the fastener 600 is a bolt, and a waist hole 700 is provided on the upper mounting plate 100 and / or the lower mounting plate 200, the waist hole 700 extends along a second straight line, and the fastener 600 passes through the waist hole 700; the tightness of the bolt controls the relative movement freedom between the upper mounting plate 100 and the lower mounting plate 200, and when the lower mounting plate 200 moves, the bolt also slides in the corresponding waist hole 700, but always maintains the connection relationship between the upper mounting plate 100 and the lower mounting plate 200, which can prevent the lower mounting plate 200 from falling off and limit the movement trajectory of the lower mounting plate; in addition, the lower mounting plate 200 can be quickly removed by disassembling the fastener 600, and the lower mounting plate 200 of different shapes can be replaced according to the magnetic field strength requirements.
[0074] In fact, considering the relative movement of the lower mounting plate 200 and the upper mounting plate 100, the upper mounting plate 100 or the lower mounting plate 200 can be connected and fixed by setting the waist hole 700; for example, when the waist hole 700 is only provided on the upper mounting plate 100, the bolt is fixed relative to the lower mounting plate 200 after the bolt is loosened, and the movement of the lower mounting plate 200 drives the bolt to move along the waist hole 700 on the upper mounting plate 100; for another example, when the waist hole 700 is only provided on the lower mounting plate 200, the bolt is fixed relative to the upper mounting plate 100 after the bolt is loosened, and the movement of the lower mounting plate 200 causes the bolt to move relative to the lower mounting plate 200 in the waist hole 700. When the waist holes 700 are provided on both the upper mounting plate 100 and the lower mounting plate 200, a longer fault tolerance distance can be provided for the bolt.
[0075] In another embodiment, the moving member 500 is a slide rail arranged along the second straight line, which realizes a direct connection between the upper mounting plate 100 and the lower mounting plate 200, thereby simplifying the connection structure between the upper mounting plate 100 and the lower mounting plate 200 and reducing costs.
[0076] In this application, please refer to the attached Figure 3 , Attachment Figure 4 , Attachment Fig. 9 In order to satisfy the variability between multiple magnetic field intensities of the magnetron, the shape of the lower mounting plate 200 is one of a double hook shape, a crescent shape, and a semicircular shape; the area of the crescent-shaped lower mounting plate 200 is x, the area of the double hook-shaped lower mounting plate 200 is y, and the area of the semicircular lower mounting plate 200 is z, wherein x<y<z; the number of magnets on the crescent-shaped lower mounting plate 200 is r, the number of magnets on the double hook-shaped lower mounting plate 200 is s, and the number of magnets on the semicircular lower mounting plate 200 is t, wherein r<s<t.
[0077] Regarding the shape of the lower mounting plate 200, the present application provides three shapes: double hook shape, crescent shape, and semicircular shape. The reason is that the surface areas of the lower mounting plates 200 in different shapes are different, and the number of magnets that can be accommodated and installed is also different, so the magnetic field strength is also different. The smaller the surface area of the lower mounting plate 200, the fewer magnets it can accommodate, and the smaller the magnetic field strength.
[0078] Based on the symmetry requirement of the lower mounting plate 200, double hook shape, crescent shape, and semicircle shape are commonly used as the shapes of the lower mounting plate 200. The difference in shape lies in the edge shape of the lower mounting plate 200 close to the center of rotation. The edge shape of the crescent-shaped lower mounting plate 200 is a minor arc, and the edge shape of the semicircular lower mounting plate 200 is a straight line. Therefore, in some embodiments, on the basis of meeting the symmetry requirement of the lower mounting plate 200, the above edge shapes can also be expanded into wave shape, broken line shape, and major arc shape.
[0079] In a specific embodiment, in order to prevent the installation position of the moving member 500 from interfering with the required arrangement position of the magnet 300, the lower mounting plate 200 is provided with an arm 210 extending outward from the original shape, which is specifically used to carry the moving member 500. On this basis, the number of the moving members 500 is set to two, which are mirror-symmetrical with respect to the second straight line, thereby further improving the structural symmetry of the magnetron and stabilizing the center of the magnetron.
[0080] Combined with the structure of the above magnetron, a SJI-SERI Deporerits P188+ PVD device was selected, and the fully asymmetric PVD magnetron of the present invention and the existing magnetron were used to carry out magnetron sputtering coating experiments. The test parameters were set as follows: the target purity was 99.999% titanium, the distance between the carrier and the target was 180rr, the magnetron speed was 450rpr (the speed was above 400 revolutions per minute), the sputtering power was adjusted to 9000W, the argon flow rate was 20sccr (20-80sccr), the chamber pressure was 1.2 rTorr -4.8rTorr, the sputtering time was 120s, and a Ti film was deposited on the wafer surface.
[0081] The film thickness distribution of the cross section at the micropores of the two substrates was observed under a scanning electron microscope. The film thickness at c, d, and e on the left and right sides of the micropores was measured respectively. The film thickness at a and b was measured respectively, and the step coverage at b, c, d, and e was calculated. The measurement results are shown in the following table.
[0082]
[0083] It can be clearly seen from the above table that when the fully asymmetric PVD magnetron of the present invention is used for magnetron sputtering coating operation, compared with the existing magnetron magnetron sputtering coating operation, the step coverage of the two side walls of the substrate micropores is very close, and the overall step coverage is more than 23%, exceeding the original data of 20%. The step coverage at point d on the two side walls of the substrate micropores of the existing magnetron coating differs by nearly 10%, and there is an obvious "bias phenomenon". Therefore, the fully asymmetric PVD magnetron of the present invention can effectively solve the problems of low step coverage and large difference in step coverage on the two side walls of the micropores, and improve the "bias" phenomenon.
[0084] Please see attached Fig.10The present invention also provides a coating test method, which is implemented using the asymmetric PVD magnetron as described above: a double-hook-shaped lower mounting plate 200 is selected for the first time, and a completely asymmetric PVD magnetron is used to perform the first coating operation to check whether the wafer micropores are biased; if not, the test is terminated; if there is an outward bias, the magnetron component is moved outward, the coating operation is repeated, and the outward bias is checked until there is no outward bias, and the test is terminated; when the magnetron component is moved outward to the extreme position and there is still an outward bias, the crescent-shaped lower mounting plate 200 is replaced, the coating operation is repeated, and the outward bias is checked. No outward deviation; if outward deviation still exists, move the magnetron assembly outward, repeat the coating operation and check whether it is outward deviation, until there is no outward deviation, the test is over; if inward deviation exists, move the magnetron assembly inward, repeat the coating operation and check whether it is inward deviation, until there is no inward deviation, the test is over; when the magnetron assembly moves inward to the limit position and still has inward deviation, replace the semicircular lower mounting plate 200, repeat the coating operation and check whether it is inward deviation; if inward deviation still exists, move the magnetron assembly inward, repeat the coating operation and check whether it is inward deviation, until there is no inward deviation, the test is over.
[0085] The specific explanation of the micropore deviation on the wafer is: when the film thickness of the inner and outer walls of the micropore is greater than the film thickness of the inner and inner walls of the micropore, it means that the micropore is outwardly deviated, so it is necessary to reduce the number of magnets, move the physical center of the magnetic control component inward, and increase the film thickness of the inner and outer walls of the micropore. Similarly, when the film thickness of the inner and outer walls of the micropore is less than the film thickness of the inner and outer walls of the micropore, it means that the micropore is inwardly deviated, so it is necessary to increase the number of magnets, move the physical center of the magnetic control component inward, and increase the film thickness of the inner and outer walls of the micropore.
[0086] The above test method combines a completely asymmetrical magnet distribution with a magnetron structure with adjustable magnetic field strength and magnetic field position. After multiple tests, the most suitable position of the magnetron component is found. After adjusting the position of the magnetron component, formal coating is carried out, which can effectively improve the problem of large difference in step coverage between the left and right side walls. The principle of PVD coating process has been disclosed in the prior art and will not be repeated here.
[0087] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.
Claims
1. A fully asymmetric PVD magnetron, characterized in that: include: An upper mounting plate (100), wherein the center of the circle of the upper mounting plate (100) is configured as a rotation center, and two straight lines passing through the diameter of the upper mounting plate (100) are respectively configured as a first straight line and a second straight line, and the first straight line and the second straight line are perpendicular to each other; A lower mounting plate (200) is located on one side of the first straight line and is mirror-symmetrical with respect to the second straight line; The magnetic control assembly comprises a plurality of magnets (300) respectively arranged on the side of the lower mounting plate (200) close to the upper mounting plate (100); in two adjacent magnets (300), the magnetic pole at one end of one of the magnets (300) is opposite to the magnetic pole at one end of the other magnet (300); A counterweight block (400) is located on the other side of the first straight line and connected to the upper mounting plate (100), and the counterweight block (400) is mirror-symmetrical with respect to the second straight line; a moving member (500) for driving the lower mounting plate (200) to move along the second straight line so that the magnetron assembly moves closer to or farther from the rotation center; the moving member (500) comprises an upper slider (510), a lower slider (520), a plurality of grooves (521), and a paddle (530); the upper slider (510) is arranged on the upper mounting plate (100); the lower slider (520) is arranged on the lower mounting plate (200) and is capable of moving along the second straight line; a plurality of grooves (521) are arranged at intervals on the lower slider (520); any of the grooves (521) extends along the first straight line; the paddle (530) is arranged on the upper slider (510); and the paddle (530) is capable of entering one of the grooves (521) as the lower slider (520) moves; A fastener (600) for fixing the relative position between the upper mounting plate (100) and the lower mounting plate (200); A receiving space (540) is formed between the upper slider (510) and the lower slider (520), and a rolling member (550) is rotatably arranged in the receiving space (540); when the lower slider (520) slides, the rolling member (550) rolls along the inner wall of the upper slider (510) or the inner wall of the lower slider (520).
2. The fully asymmetric PVD magnetron according to claim 1, characterized in that: The rolling member (550) is a roller, and the rotating shaft of the rolling member (550) is connected to the upper slider (510) or the lower slider (520).
3. The fully asymmetric PVD magnetron according to claim 1, characterized in that: The rolling element (550) is a gear, and the rotating shaft of the gear is connected to the upper slider (510) or the lower slider (520).
4. The fully asymmetric PVD magnetron according to claim 1, characterized in that: The moving part (500) further comprises: A step (522) is arranged at the end of the lower sliding block (520) and is located outside the accommodating space (540), and the groove (521) is arranged on the step (522).
5. The fully asymmetric PVD magnetron according to claim 1, characterized in that: A bracket (560) is provided on the upper sliding block (510), and the paddle (530) is arranged at an end of the bracket (560).
6. The fully asymmetric PVD magnetron according to any one of claims 1 to 5, characterized in that: The fastener (600) is a bolt, and a waist hole (700) is provided on the upper mounting plate (100) and / or the lower mounting plate (200), the waist hole (700) extends along a second straight line, and the fastener (600) passes through the waist hole (700).
7. The fully asymmetric PVD magnetron according to any one of claims 1 to 5, characterized in that: The shape of the lower mounting plate (200) is one of a double hook shape, a crescent shape, and a semicircle shape; The area of the crescent-shaped lower mounting plate (200) is x, the area of the double-hook-shaped lower mounting plate (200) is y, and the area of the semicircular lower mounting plate (200) is z, wherein x<y<z; The number of magnets on the crescent-shaped lower mounting plate (200) is r, the number of magnets on the double-hook-shaped lower mounting plate (200) is s, and the number of magnets on the semicircular lower mounting plate (200) is t, wherein r<s<t.
8. A coating test method, implemented using the fully asymmetric PVD magnetron of claim 7, characterized in that: For the first time, a double-hook-shaped lower mounting plate (200) is selected, and a fully asymmetric PVD magnetron is used to perform the first coating operation to check whether the wafer micropores have an edge deviation; If it is not biased, the test ends; If there is an outward deflection, move the magnetron assembly outward, repeat the coating operation and check whether it is outward deflected until there is no outward deflection, and the test is over; When the magnetron assembly is moved outward to the limit position and still deviates outward, replace the crescent-shaped lower mounting plate (200), repeat the coating operation and check whether it deviates outward; If the external deflection still exists, move the magnetron assembly outward, repeat the coating operation and check whether it is external deflection, until there is no external deflection, and the test is over; If there is inward deviation, move the magnetron assembly inward, repeat the coating operation and check whether it is inward deflected until there is no inward deviation, and the test is over; When the magnetron assembly is moved inward to the limit position and still deviates inward, replace the semicircular lower mounting plate (200), repeat the coating operation and check whether it deviates inward; If the inward deviation still exists, move the magnetron assembly inward, repeat the coating operation and check whether it is inwardly deviated until it is no longer inwardly deviated, and the test is over.
Citation Information
Patent Citations
Selectable dual position magnetron
KR100972812B1