Reaction Chamber Structure and Deposition Equipment

Abstract

Embodiments of the present disclosure relate to the field of semiconductor manufacturing, and provide a reaction chamber structure and a deposition apparatus. The reaction chamber structure includes a reaction chamber body, which includes a reaction chamber and a receiving chamber that is vertically connected to the reaction chamber. The reaction chamber is located above the receiving chamber. The reaction chamber structure further includes an air inlet mechanism, an air extraction port, a carrier stage, a curing mechanism, and a controller. The curing mechanism is disposed in the receiving chamber and can move up and down in the vertical direction in the reaction chamber. The curing mechanism is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is used to control the vertical movement of the curing mechanism so that the curing mechanism is located in the receiving chamber during the deposition of the film layer, and after the deposition of the film layer, control the vertical movement of the curing mechanism into the reaction chamber and control the curing mechanism to provide curing energy for the film layer. Embodiments of the present disclosure can at least improve the efficiency and reliability of preparing the target material layer.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the field of semiconductor manufacturing, and in particular, to a reaction chamber structure and a deposition apparatus. Background Art

[0002] In the semiconductor industry, due to the increasing requirements for device integration, the size of devices is continuously reduced to improve the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.). Therefore, semiconductor devices need to have a structure with a high aspect ratio, and the gaps between the high-aspect-ratio structures can be filled with an insulating material. Among them, flowable chemical vapor deposition (FCVD) is a preparation method suitable for materials for filling high-aspect-ratio structures. A film layer with relatively good fluidity can be formed on a wafer, and then a curing mechanism is used to provide curing energy to convert the film layer on the wafer into a target material layer. Since the target material layer prepared by FCVD exhibits good conformal properties, step coverage, and the ability to fully fill high-aspect-ratio spaces, FCVD can be applied to the filling of high-aspect-ratio gaps in semiconductor devices.

[0003] However, at present, the efficiency and reliability of the deposition apparatus applied to FCVD for preparing the target material layer need to be improved. Summary of the Invention

[0004] Embodiments of the present disclosure provide a reaction chamber structure and a deposition apparatus, which can at least improve the efficiency and reliability of preparing the target material layer.

[0005] According to some embodiments of the present disclosure, on the one hand, an embodiment of the present disclosure provides a reaction chamber structure, including: a reaction chamber body, the reaction chamber body includes a reaction chamber and a receiving chamber that is vertically connected to the reaction chamber, and the reaction chamber is located above the receiving chamber; an air inlet mechanism, the air inlet mechanism is disposed at the top of the reaction chamber, the air inlet mechanism has an air inlet hole and an air inlet channel connected to the air inlet hole, the air inlet channel is connected to the reaction chamber, and the air inlet hole is used to connect to an air inlet pipe that provides gas; an air extraction port, the air extraction port is connected to the reaction chamber; a carrier stage, the carrier stage is used to carry a wafer, and the carrier stage is located in the reaction chamber; a curing mechanism, the curing mechanism is disposed in the receiving chamber and can move up and down in the vertical direction in the reaction chamber, and the curing mechanism is used to provide curing energy for the film layer to convert the film layer into a target material layer; a controller, the controller is connected to the curing mechanism and is used to control the curing mechanism to move in the vertical direction, so that the curing mechanism is located in the receiving chamber during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism to move into the reaction chamber in the vertical direction, and control the curing mechanism to provide the curing energy for the film layer.

[0006] In some embodiments, the controller controls the curing mechanism to alternately move between the receiving chamber and the reaction chamber.

[0007] In some embodiments, the cross-sectional area of the receiving chamber perpendicular to the vertical direction is smaller than the cross-sectional area of the reaction chamber perpendicular to the vertical direction.

[0008] In some embodiments, the receiving chamber is an annular chamber connected to the bottom of the reaction chamber; the curing mechanism is circumferentially disposed in the receiving chamber, or, the curing mechanism includes a plurality of curing devices, and the curing devices are circumferentially arranged in the receiving chamber.

[0009] In some embodiments, the receiving chamber includes a plurality of circumferentially arranged sub-receiving chambers, the sub-receiving chambers are all connected to the bottom of the reaction chamber, and the curing mechanism includes a plurality of curing devices, and the curing devices are disposed in the sub-receiving chambers.

[0010] In some embodiments, the reaction chamber structure further includes: a baffle, the baffle is located in the receiving chamber, the baffle is telescopable in the horizontal direction, the baffle is connected to the controller, and during the deposition of the film layer, the controller controls the baffle to stretch so that the baffle blocks the passage between the reaction chamber and the receiving chamber, and after the deposition of the film layer, the controller controls the baffle to contract so that the baffle does not block the vertical movement of the curing mechanism.

[0011] In some embodiments, the curing mechanism is a light source curing mechanism, and the light source curing mechanism is configured to provide a light beam to supply the curing energy to the film layer; the reaction chamber structure further includes: a reflector located on top of the curing mechanism, with a reflecting surface on the side of the reflector facing away from the air inlet mechanism, and the reflecting surface is configured to reflect the light beam. The reflector is telescopable in the horizontal direction and is connected to the controller. During the curing of the film layer, the controller is configured to control the stretching of the reflector so that at least a part of the reflecting surface faces the wafer. After the film layer is cured, the controller is configured to control the contraction of the reflector so that the reflector does not block the movement of the curing mechanism in the vertical direction.

[0012] In some embodiments, the curing mechanism includes at least one movable curer; the reaction chamber structure further includes: a first telescoping mechanism disposed in the accommodation chamber, the first telescoping mechanism being telescopable in the vertical direction, the first telescoping mechanism being connected to the curing mechanism and the controller. After the film layer is deposited, the controller controls the first telescoping mechanism to stretch in the vertical direction to drive the curing mechanism to move into the reaction chamber to supply the curing energy to the film layer. After the film layer is cured, the controller controls the first telescoping mechanism to contract in the vertical direction to drive the curing mechanism to move back into the accommodation chamber; a second telescoping mechanism, the first telescoping mechanism is connected to the second telescoping mechanism, the second telescoping mechanism being telescopable in the horizontal direction, the second telescoping mechanism being connected to the movable curer and the controller. When the movable curer is located in the reaction chamber, the controller controls the second telescoping mechanism to stretch to drive the movable curer to move so that the movable curer is located directly above the wafer, and the controller controls the movable curer to supply the curing energy. After the film layer is cured, the controller controls the movable curer to stop supplying the curing energy, and the controller controls the second telescoping mechanism to contract so that the movable curer does not block the movement of the first telescoping mechanism in the vertical direction.

[0013] In some embodiments, the curing mechanism includes at least one rotatable curer; the reaction chamber structure further includes: a first telescopic mechanism disposed in the reaction chamber, the first telescopic mechanism being telescopic in the vertical direction, the first telescopic mechanism being connected to the curing mechanism and the first telescopic mechanism being connected to the controller. After depositing the film layer, the controller controls the first telescopic mechanism to stretch in the vertical direction to drive the curing mechanism to move into the reaction chamber to provide the curing energy for the film layer. After curing the film layer, the controller controls the first telescopic mechanism to contract in the vertical direction to drive the curing mechanism to move into the accommodation chamber; a rotary fixing member, the rotary fixing member being connected to the first telescopic mechanism, the rotary fixing member being rotatably connected to the rotatable curer; the controller being connected to the rotatable curer. When the curing mechanism is located in the reaction chamber, the controller controls the rotatable curer to rotate around the rotary fixing member to be parallel to the horizontal direction so that at least a part of the rotatable curer is located directly above the wafer, and the controller controls the rotatable curer to provide the curing energy. After curing the film layer, the controller controls the rotatable curer to stop providing the curing energy, and the controller controls the rotatable curer to rotate around the rotary fixing member to be parallel to the vertical direction so that the rotatable curer fits the first telescopic mechanism.

[0014] According to some embodiments of the present disclosure, on the other hand, the present disclosure embodiments further provide a deposition device including the reaction chamber structure described in any of the above embodiments.

[0015] The technical solutions provided by the embodiments of the present disclosure have at least the following advantages:

[0016] In the technical solution of the reaction chamber structure provided by the embodiments of the present disclosure, it includes: a reaction chamber body, an air inlet mechanism, an air extraction port, a carrier stage, a curing mechanism, and a controller. The reaction chamber body includes a reaction chamber and a receiving chamber that is vertically connected to the reaction chamber, and the reaction chamber is located above the receiving chamber. The air inlet mechanism is arranged at the top of the reaction chamber. The air inlet mechanism has an air inlet hole and an air inlet channel connected to the air inlet hole. The air inlet channel is connected to the reaction chamber, and the air inlet hole is used to connect to an air inlet pipe that provides gas; an air extraction port, and the air extraction port is connected to the reaction chamber. The carrier stage is used to carry a wafer, and the carrier stage is located in the reaction chamber so that a film layer is deposited on the surface of the wafer. The curing mechanism is arranged in the receiving chamber and can move up and down in the vertical direction in the reaction chamber. The curing mechanism is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is connected to the curing mechanism and is used to control the curing mechanism to move in the vertical direction so that the curing mechanism is located in the receiving chamber during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism to move into the reaction chamber in the vertical direction, and control the curing mechanism to provide curing energy for the film layer. In this reaction chamber structure, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber. During the deposition of the film layer, the curing mechanism is located in the receiving chamber. After the film layer is deposited, the curing mechanism moves into the reaction chamber in the vertical direction to provide curing energy for the film layer to convert it into a target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art. On the one hand, a large amount of time can be saved, thereby improving the preparation efficiency of the target material layer. On the other hand, it can also avoid increasing defects due to the movement of the wafer between different chambers, thereby improving the reliability of the preparation of the target material layer. Description of the Drawings

[0017] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplary illustrations do not limit the embodiments. Unless otherwise stated, the figures in the drawings do not constitute a proportional limitation; in order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or in the traditional technology, the drawings required to be used in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0018] Figure 1 It is a schematic structural diagram of a deposition chamber structure in the related art;

[0019] Figure 2 It is a schematic structural diagram of a curing chamber structure in the related art;

[0020] Figure 3 It is a schematic structural diagram of a reaction chamber structure in the related art;

[0021] Figure 4 Schematic cross-sectional view of the curing mechanism located in the accommodation cavity in the first reaction cavity structure provided by some embodiments of the present disclosure;

[0022] Figure 5 Schematic cross-sectional view of the curing mechanism located in the reaction cavity in the first reaction cavity structure provided by some embodiments of the present disclosure;

[0023] Figure 6 Schematic cross-sectional view of the curing mechanism located in the accommodation cavity in the second reaction cavity structure provided by some embodiments of the present disclosure;

[0024] Figure 7 Schematic cross-sectional view of an intake mechanism provided by some embodiments of the present disclosure;

[0025] Figure 8 Schematic top view of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure;

[0026] Figure 9 Another schematic top view of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure;

[0027] Figure 10 Yet another schematic top view of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure;

[0028] Figure 11 Schematic cross-sectional view of the baffle in the contracted state in the third reaction cavity structure provided by some embodiments of the present disclosure;

[0029] Figure 12 Schematic cross-sectional view of the baffle in the stretched state in the third reaction cavity structure provided by some embodiments of the present disclosure;

[0030] Figure 13 Schematic cross-sectional view of the telescopic member in the contracted state in the fourth reaction cavity structure provided by some embodiments of the present disclosure;

[0031] Figure 14 Schematic cross-sectional view of the telescopic member in the stretched state in the fourth reaction cavity structure provided by some embodiments of the present disclosure;

[0032] Figure 15 Schematic cross-sectional view of the mirror in the contracted state in the fifth reaction cavity structure provided by some embodiments of the present disclosure;

[0033] Figure 16 Schematic cross-sectional view of the mirror in the stretched state in the fifth reaction cavity structure provided by some embodiments of the present disclosure;

[0034] Figure 17Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the second telescopic mechanism is in a contracted state;

[0035] Figure 18 Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the second telescopic mechanism is in a stretched state;

[0036] Figure 19 Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the rotatable curing device is parallel to the vertical direction;

[0037] Figure 20 Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the rotatable curing device is parallel to the horizontal direction;

[0038] Figure 21 Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the telescopic curing device is in a contracted state;

[0039] Figure 22 Schematic cross-sectional structure diagram of the reaction chamber structure provided in some other embodiments of the present disclosure when the telescopic curing device is in a stretched state. Detailed implementation manners

[0040] Figure 1 A schematic structure diagram of a deposition chamber structure in the related art, Figure 2 A schematic structure diagram of a curing chamber structure in the related art.

[0041] With reference to Figure 1 and Figure 2 , the reaction chamber structure in the related art includes a deposition chamber structure 100 and a curing chamber structure 101. The deposition chamber structure 100 includes a deposition chamber 110, a first vacuum transfer chamber 120, a first loading chamber 130, and a first wafer boat 140 for placing a wafer 11. The curing chamber structure 101 includes a curing chamber 111, a second vacuum transfer chamber 121, a second loading chamber 131, and a second wafer boat 141 for placing the wafer 11. After the wafer 11 is deposited with a film layer in the deposition chamber 110, the wafer 11 needs to pass through the first vacuum transfer chamber 120, the first loading chamber 130, the first wafer boat 140, the second wafer boat 141, the second loading chamber 131, and the second vacuum transfer chamber 121 in sequence and then move to the curing chamber 111 so that the film layer on the surface of the wafer 11 can receive curing energy in the curing chamber 111 and be converted into a target material layer.

[0042] In this reaction chamber structure, the deposition chamber 110 for depositing the film layer and the curing chamber 111 for curing the film layer are located on two platforms. After the wafer 11 deposits the film layer in the deposition chamber 110 and moves through other chambers to the curing chamber 111, a large amount of time is wasted, resulting in low efficiency in preparing the target material layer on the surface of the wafer 11.

[0043] Figure 3 It is a schematic structural diagram of a reaction chamber structure in the related art.

[0044] Reference Figure 3 , the reaction chamber structure in the related art includes a deposition chamber 200, a vacuum transfer chamber 201, a curing chamber 202, a loading chamber 203, and a wafer boat 204 for placing the wafer 11. After the wafer 11 deposits the film layer on the surface of the wafer 11 in the deposition chamber 200, the wafer 11 needs to move through the vacuum transfer chamber 201 to the curing chamber 202 so that the film layer on the surface of the wafer 11 can receive curing energy in the curing chamber 202 and be converted into the target material layer.

[0045] In this reaction chamber structure, although the deposition chamber 200 for depositing the film layer and the curing chamber 202 for curing the film layer are located on one platform, after the wafer 11 deposits the film layer in the deposition chamber 200, the wafer 11 still needs to be moved to the curing chamber 202, and a large amount of time is wasted during the movement, resulting in low efficiency in preparing the target material layer on the surface of the wafer 11.

[0046] In summary, in the reaction chamber structure in the current related art, the deposition chamber and the curing chamber are two independent chambers. After depositing the film layer in the deposition chamber, the wafer needs to be moved to another chamber so that the film layer can receive curing energy and be converted into the target material layer. A large amount of time is wasted during the movement, resulting in low efficiency in preparing the target material layer on the surface of the wafer. In addition, the movement of the wafer in different chambers may increase defects in the wafer and / or the target material layer, resulting in low reliability in preparing the target material layer.

[0047] Therefore, the efficiency and reliability of the target material layer prepared by the reaction chamber structure in the related art need to be improved.

[0048] In the reaction chamber structure provided by the embodiments of the present disclosure, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber. During the deposition of the film layer, the curing mechanism is located in the accommodation chamber. After the film layer is deposited, the curing mechanism moves vertically into the reaction chamber to provide curing energy for the film layer to be converted into the target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art. On the one hand, a large amount of time can be saved, thereby improving the preparation efficiency of the target material layer. On the other hand, it can also avoid increasing defects due to the movement of the wafer between different chambers, thereby improving the reliability of preparing the target material layer.

[0049] The following will elaborate on the embodiments of the present disclosure in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that in the embodiments of the present disclosure, many technical details are provided to help readers better understand the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented.

[0050] Figure 4 Schematic cross-sectional structure diagram of the curing mechanism located in the accommodation cavity in the first reaction cavity structure provided by some embodiments of the present disclosure Figure 5 Schematic cross-sectional structure diagram of the curing mechanism located in the reaction cavity in the first reaction cavity structure provided by some embodiments of the present disclosure.

[0051] With reference to Figure 4 and Figure 5 , the reaction cavity structure includes a reaction cavity body 300, an air inlet mechanism 301, an air extraction port 302, a carrier stage 303, a curing mechanism 304, and a controller (not shown). The reaction cavity body 300 includes a reaction cavity 310 and an accommodation cavity 320 that is vertically connected to the reaction cavity 310 in the Y direction, and the reaction cavity 310 is located above the accommodation cavity 320. The air inlet mechanism 301 is disposed at the top of the reaction cavity 310. The air inlet mechanism 301 has an air inlet hole 311 and an air inlet channel 321 connected to the air inlet hole 311. The air inlet channel 321 is connected to the reaction cavity 310, and the air inlet hole 311 is used to connect to an air inlet pipe that provides gas. The air extraction port 302 is connected to the reaction cavity 310. The carrier stage 303 is used to carry the wafer 11, and the carrier stage 303 is located in the reaction cavity 310. The curing mechanism 304 is disposed in the accommodation cavity 320 and can move up and down in the Y direction in the reaction cavity 310. The curing mechanism 304 is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is connected to the curing mechanism 304 and is used to control the movement of the curing mechanism 304 in the Y direction so that the curing mechanism 304 is located in the accommodation cavity 320 during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism 304 to move into the reaction cavity 310 in the Y direction and control the curing mechanism 304 to provide curing energy for the film layer.

[0052] The reaction cavity structure is used to generate a target material layer on the surface of the wafer 11. Specifically, the reaction cavity body 300 is used to generate a target material layer on the surface of the wafer 11.

[0053] The wafer 11 can be a silicon wafer, a germanium wafer, or a silicon-germanium wafer, etc. The wafer 11 can have trenches with a high aspect ratio (aspect ratio greater than 8:1), and the opening of the trenches is narrower than 20 nm; or, the wafer 11 can have trenches with an aspect ratio less than or equal to 8:1, and the opening of the trenches is greater than or equal to 20 nm; or, the wafer 11 can have a smooth surface (i.e., without trenches).

[0054] The film layer is a thin film with good fluidity. After depositing the film layer, the film layer needs to be cured to make it densify and transform into the target material layer.

[0055] For example, when generating a thin film of silica with good fluidity, the precursors for generating the film layer can be TSA (Trisilylamine) and NH3 (ammonia), and the curing gas can be a gaseous source containing oxygen atoms such as O3 and O2. Another example is when generating a thin film of silicon nitride with positive stress, the reaction gases can include SiH4, N2, NH3, etc., and the curing gas can be an inert gas such as He and Ar.

[0056] The target material layer can be silica, or a material with a dielectric constant greater than 3.9 such as silicon nitride or silicon oxynitride, or a material with a dielectric constant less than 3.9 such as fluorine-doped silica, carbon-doped silica, or fluorocarbon compounds.

[0057] The reaction chamber 310 is used to provide a reaction space for generating the target material layer on the surface of the wafer 11, and the accommodation chamber 320 is used to place the curing mechanism 304. Specifically, when the curing mechanism 304 is located in the accommodation chamber 320, the reaction gas enters the reaction chamber 310 through the gas inlet mechanism 301 and deposits a film layer on the surface of the wafer 11. When the film layer deposition is completed, the controller controls the curing mechanism 304 to move vertically upward into the reaction chamber 310 and controls the curing mechanism 304 to provide curing energy for the film layer to convert the film layer into the target material layer.

[0058] Figure 6 It is a schematic cross-sectional structure diagram of the curing mechanism located in the accommodation chamber in the second reaction chamber structure provided by some embodiments of the present disclosure.

[0059] Reference Figure 6 In some embodiments, the cross-sectional area of the accommodation chamber 320 perpendicular to the vertical direction Y can be smaller than the cross-sectional area of the reaction chamber 310 perpendicular to the vertical direction Y. Since the accommodation chamber 320 is mainly used to place the curing mechanism 304, the cross-sectional area of the accommodation chamber 320 perpendicular to the vertical direction Y can be smaller than the cross-sectional area of the reaction chamber 310 perpendicular to the vertical direction Y, so that the overall volume of the reaction chamber structure can be smaller, which is beneficial to saving the manufacturing cost of the reaction chamber structure.

[0060] In other embodiments, the cross-sectional area of the accommodation chamber 320 perpendicular to the vertical direction Y can also be greater than or equal to the cross-sectional area of the reaction chamber 310 perpendicular to the vertical direction Y.

[0061] The gas inlet mechanism 301 is used to supply gas to the reaction chamber 310.

[0062] The gas can be one or more of a reaction gas, a cleaning gas, or a curing gas. The reaction gas reacts on the surface of the wafer 11 to form a film layer. The curing gas is the gas required for the film layer to receive curing energy and transform into the target material layer. The cleaning gas is used to clean the by-products on the side walls of the reaction chamber structure.

[0063] In one example, the reaction gas may include H2N(SiH3), HN(SiH3)2, N(SiH3)3, HMDSO (C6H 18 Si2O, hexamethyldisiloxane), or other gases containing SiH3 groups, etc. The reaction gas may also include at least one of NH3, N2H4, N2, H2. The reaction gas may also include other gases with NH- groups or NH2- groups. The curing gas may include oxygen-containing gases such as O3, O2, H2O, N2O, NO2, etc. The curing gas may also be an inert gas such as He, Ar, etc.

[0064] It can be understood that parameters such as the composition and content of the reaction gas, the cleaning gas, and the curing gas can be adjusted according to the actual situation. The embodiments of the present disclosure do not limit the parameters such as the composition and content of the reaction gas, the cleaning gas, and the curing gas.

[0065] Figure 7 FIG. 12 is a schematic cross-sectional structure diagram of an air intake mechanism provided in some embodiments of the present disclosure.

[0066] With reference to Figure 4 and Figure 7 , in some embodiments, the air intake mechanism 301 includes a flow guiding plate 331, a first air outlet plate 341, and a second air outlet plate 351. The flow guiding plate 331 has an air inlet hole 311 and a flow guiding channel 3211 connected to the air inlet hole 311. The first air outlet plate 341 has a plurality of first air outlet holes 3212 penetrating through the first air outlet plate, and the first air outlet holes 3212 are connected to the flow guiding channel 3211. The second air outlet plate 351 and the flow guiding plate 331 are respectively located on opposite sides of the first air outlet plate 341. The second air outlet plate 351 has a plurality of second air outlet holes 3213 penetrating through the second air outlet plate 351, and the second air outlet holes 3213 are connected to the first air outlet holes 3212. The distribution density of the second air outlet holes 3213 is greater than that of the first air outlet holes 3212, and the aperture of the second air outlet holes 3213 is smaller than that of the first air outlet holes 3212. The air intake channel 321 is composed of the flow guiding channel 3211, the first air outlet holes 3212, and the second air outlet holes 3213.

[0067] The flow guiding plate 331 is used to connect the air inlet pipe that provides gas. Specifically, the air inlet hole 311 of the flow guiding plate 331 is used to connect the air inlet pipe that provides gas, and guide the gas so that the gas is not only distributed near the air inlet hole 311, but also has gas in the part far from the air inlet hole 311.

[0068] The first air outlet plate 341 is used to communicate with the diversion channel 3211 and transfer the gas in the diversion channel 3211 to the second air outlet plate 351. Specifically, the first air outlet holes 3212 of the first air outlet plate 341 are used to communicate with the diversion channel 3211 and transfer the gas in the gas diversion channel 3211 to the second air outlet plate 351.

[0069] The second air outlet plate 351 and the diversion plate 331 are respectively located on opposite sides of the first air outlet plate 341. The second air outlet plate 351 is used to transport the gas in the first air outlet plate 341 into the reaction chamber 310. Specifically, the second air outlet holes 3213 of the second air outlet plate 351 communicate with the first air outlet holes 3212 to transport the gas in the first air outlet plate 341 into the reaction chamber 310.

[0070] The second air outlet holes 3213 communicate with the first air outlet holes 3212. The distribution density of the second air outlet holes 3213 is greater than that of the first air outlet, and the aperture of the second air outlet holes 3213 is smaller than that of the first air outlet holes 3212, so that the gas is roughly shunted through the first air outlet holes 3212 first and then finely shunted through the second air outlet holes 3213, making the gas entering the reaction chamber 310 through the intake mechanism 301 as uniform as possible in the horizontal direction X, which is beneficial to improving the uniformity of the target material layer prepared on the wafer 11.

[0071] Continue to refer to Figure 4 , and the air extraction port 302 is used to exhaust the by-products and waste gases deposited in the reaction chamber 310.

[0072] In some embodiments, an air extraction pump may be provided on the side of the air extraction port 302 away from the reaction chamber 310 to help the air extraction port 302 quickly exhaust the gas. The controller can be connected to the air extraction pump. When a film layer is deposited on the surface of the wafer 11, before the curing mechanism 304 moves to the reaction chamber 310 in the vertical direction Y, the controller can control the air extraction pump to exhaust the by-products and waste gases deposited in the reaction chamber 310, so as to avoid affecting the curing effect of the film layer due to the reaction gas remaining in the reaction chamber 310 when depositing the target material layer when the curing gas needs to be introduced into the reaction chamber 310, which is beneficial to improving the reliability of the reaction chamber structure.

[0073] The carrier 303 is used to place the wafer 11.

[0074] In some embodiments, a heater (not shown) may be disposed in the susceptor 303, and the heater is used to heat the wafer 11; the heater is also connected to a controller, and the controller is further used to control the heating temperature of the heater. With such a setting, the reaction chamber structure can provide the required temperature during the deposition of the film layer and also during the curing of the film layer, which is beneficial to improving the practicability of the reaction chamber structure. In addition, the controller can control the heating temperature of the heater. When the temperature required for depositing the film layer is different from the temperature required for curing the film layer, the controller can control the heating temperature of the heater, adjust the heating temperature of the heater to the temperature required for depositing the film layer during the deposition of the film layer, and adjust the heating temperature of the heater to the temperature required for curing the film layer during the curing of the film layer, which can further improve the practicability of the reaction chamber structure.

[0075] The curing mechanism 304 is used to provide curing energy for the film layer so that the film layer can be transformed into a target material layer. The curing mechanism 304 can move up and down in the vertical direction Y. During the deposition of the film layer, the curing mechanism 304 is located in the accommodation cavity 320. After the film layer is deposited, the curing mechanism 304 moves up in the vertical direction Y into the reaction chamber 310 to provide the required curing energy for curing the film layer and converting it into a target material layer.

[0076] In some embodiments, the controller can control the curing mechanism 304 to alternately move between the accommodation cavity 320 and the reaction chamber 310. Thus, the deposition and curing of the film layer by the reaction chamber structure can be alternately performed. During the deposition of the film layer, the controller can control the curing mechanism 304 to be located in the accommodation cavity 320. After the film layer is deposited, the controller controls the curing mechanism 304 to move into the reaction chamber 310. After controlling the curing mechanism 304 to provide curing energy to convert the film layer into a target material layer, the controller controls the curing mechanism 304 to move back into the accommodation cavity 320 again, introduce the reaction gas again and deposit another film layer on the surface of the target material layer. Then, the controller controls the curing mechanism 304 to move into the reaction chamber 310 and controls the curing mechanism 304 to provide curing energy to convert the film layer on the surface of the target material layer into a target material layer. The above steps of depositing the film layer and curing the film layer can be alternately performed multiple times by moving the curing mechanism 304, so that the curing effects of the upper part and the lower part of the prepared target material layer can be ensured to be the same, and the situation that the subsequent other film layers and / or the target material layer are bent when preparing other film layers on the target material layer, which affects the performance of the device including the target material layer, can be avoided, and thus the reliability of the prepared target material layer can be improved.

[0077] In a specific example, when a 500-angstrom positive-stress silicon nitride layer needs to be prepared, a first silicon nitride film layer with a thickness of 170 angstroms can be first deposited on the surface of the wafer 11, and then moved into the reaction chamber 310 by the curing mechanism 304 to provide curing energy, so that this first silicon nitride film layer receives the curing energy and is converted into a first positive-stress silicon nitride layer. After that, it is moved into the accommodation chamber 320 by the curing mechanism 304, and a second silicon nitride film layer with a thickness of 170 angstroms is deposited on the surface of the first positive-stress silicon nitride layer. Then, it is moved into the reaction chamber 310 by the curing mechanism 304 to provide curing energy, so that this second silicon nitride film layer receives the curing energy and is converted into a second positive-stress silicon nitride layer. After that, it is moved into the accommodation chamber 320 by the curing mechanism 304, and a third silicon nitride film layer with a thickness of 170 angstroms is deposited on the surface of the second positive-stress silicon nitride layer. Then, it is moved into the reaction chamber 310 by the curing mechanism 304, so that this third silicon nitride film layer receives the curing energy and is converted into a third positive-stress silicon nitride layer, so as to obtain a positive-stress silicon nitride layer with a required thickness of 500 angstroms. In other words, the curing mechanism 304 can be alternately moved in the reaction chamber 310 and the accommodation chamber 320 to perform three depositions and curing processes, each depositing a silicon nitride film layer with a thickness of 170 angstroms, and finally obtaining a 500-angstrom positive-stress silicon nitride layer. Among them, the film layer in each curing process is a silicon nitride film layer with a thickness of 170 angstroms, and the thickness of the silicon nitride film layer is small, so that the curing effects of the upper part and the lower part of each silicon nitride film layer can be the same, and the curing effects of the upper part and the lower part of the final positive-stress silicon nitride layer can be the same, so that the reliability of the positive-stress silicon nitride layer prepared by using this reaction chamber structure is relatively high. It can be understood that curing the film layer is to make it densify and transform into the target material layer. Therefore, the thickness of the film layer after curing is slightly lower than that of the film layer before curing. Therefore, when performing three depositions and curing processes to prepare a 500-angstrom positive-stress silicon nitride layer, a silicon nitride film layer with a thickness of 170 angstroms needs to be deposited each time.

[0078] It can be understood that when the required thickness of the target material layer to be prepared is relatively thin, after depositing the film layer, by moving the curing mechanism 304 and allowing the curing mechanism 304 to provide curing energy for the film layer, the film layer is converted into the target material layer, and the preparation of the target material layer with the required thickness and the same curing effects for the upper part and the lower part can be completed. When the required thickness of the target material layer to be prepared is relatively thick, the curing mechanism 304 can be alternately moved in the accommodation chamber 320 and the reaction chamber 310 to complete the alternation of depositing the film layer and curing the film layer, so as to obtain the target material layer with the required thickness and the same curing effects for the upper part and the lower part. That is, when preparing the target material layer by using the reaction chamber structure in the embodiments of the present disclosure, the preparation of the target material layer can be directly completed by first depositing and then curing, or the preparation of the target material layer can be completed by alternately depositing and curing multiple times. The embodiments of the present disclosure do not limit the number of alternations of depositing the film layer and curing the film layer.

[0079] The curing mechanism 304 can be a light source curing mechanism that provides light energy such as an ultraviolet curing mechanism. The wavelength of the light beam provided by the light source curing mechanism can be between 100 nm and 400 nm. The light beam provided by the light source curing mechanism can be a fixed wavelength, or a superposition of several wavelengths or a certain range of wavelength bands. The curing mechanism 304 can also be a heat energy curing mechanism that provides heat energy, and the curing mechanism 304 can also be a plasma curing mechanism that provides a plasma energy source.

[0080] Figure 8 A top view structural schematic diagram of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure.

[0081] With reference to Figure 6 and Figure 8 , in some embodiments, the accommodation cavity 320 can be an annular cavity connected to the bottom of the reaction cavity 310; the curing mechanism 304 is circumferentially arranged in the accommodation cavity 320. Compared with the structure of the accommodation cavity being a cylindrical cavity, the accommodation cavity 320 being an annular cavity can save volume and is beneficial to reducing the manufacturing cost of the reaction cavity structure. The circumferential arrangement of the curing mechanism can provide the required curing energy for the entire circumference of the film layer, enabling the film layer to receive the curing energy and be converted into the target material layer, which is beneficial to improving the reliability of preparing the target material layer.

[0082] Figure 9 Another top view structural schematic diagram of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure.

[0083] With reference to Figure 6 and Figure 9 , in some embodiments, the accommodation cavity 320 can be an annular cavity connected to the bottom of the reaction cavity 310; the curing mechanism 304 can include a plurality of curing devices 314, and the curing devices 314 are circumferentially arranged in the accommodation cavity 320. Compared with the structure of the accommodation cavity being a cylindrical cavity, the accommodation cavity 320 being an annular cavity can save volume and is beneficial to reducing the manufacturing cost of the reaction cavity structure. The curing mechanism 304 including a plurality of curing devices 314 can save the manufacturing cost of the curing mechanism 304 while meeting the curing energy required for the film layer to be converted into the target material layer, which is beneficial to reducing the manufacturing cost of the reaction cavity structure.

[0084] It can be understood that in Figure 9 , the number of curing devices is 4. In other embodiments, the number of curing devices in the curing mechanism can also be other values other than 4, and the embodiments of the present disclosure do not limit the number of curing devices.

[0085] Figure 10 Another top view structural schematic diagram of the accommodation cavity and the curing mechanism provided by some embodiments of the present disclosure.

[0086] With reference to Figure 6 and Figure 10 , in some embodiments, the accommodation cavity 320 may include a plurality of circumferentially arranged sub-accommodation cavities 330, the sub-accommodation cavities 330 are all communicated with the bottom of the reaction cavity 310, and the curing mechanism 304 includes a plurality of curing devices 314, and the curing devices 314 are arranged in the sub-accommodation cavities 330.

[0087] It can be understood that in Figure 10 , the number of sub-accommodation cavities is 4. In other embodiments, the number of sub-accommodation cavities in the curing mechanism may also be other values other than 4. The embodiments of the present disclosure do not limit the number of sub-accommodation cavities. In Figure 10 , the number of curing devices is the same as the number of sub-accommodation cavities. In other embodiments, the number of curing devices may also be different from the number of sub-accommodation cavities.

[0088] Figure 11 FIG. is a schematic cross-sectional structure diagram of the baffle in a contracted state in the third reaction cavity structure provided by some embodiments of the present disclosure. Figure 12 FIG. is a schematic cross-sectional structure diagram of the baffle in a stretched state in the third reaction cavity structure provided by some embodiments of the present disclosure.

[0089] With reference to Figure 11 and Figure 12 , in some embodiments, the reaction cavity structure may further include a baffle 305. The baffle is located in the accommodation cavity 320. The baffle 305 is telescopic in the horizontal direction X. The baffle 305 is connected to the controller. During the deposition of the film layer, the controller controls the baffle 305 to stretch so that the baffle 305 blocks the passage between the reaction cavity 310 and the accommodation cavity 320. After the deposition of the film layer, the controller controls the baffle 305 to contract so that the baffle 305 does not block the movement of the curing mechanism 304 in the vertical direction Y. During the deposition of the film layer, the controller controls the baffle 305 to stretch in the horizontal direction X so that the baffle 305 blocks the passage between the reaction cavity 310 and the accommodation cavity 320 to prevent the reaction gas from entering the accommodation cavity 320 and contaminating the curing mechanism 304. After the deposition of the film layer, the controller controls the baffle 305 to contract in the horizontal direction X so that the curing mechanism 304 can move in the vertical direction Y, so that the curing mechanism 304 can move from the accommodation cavity 320 to the reaction cavity 310 or from the reaction cavity 310 to the accommodation cavity 320. The setting of the baffle 305 is to avoid the reaction gas from contaminating the curing mechanism 304 without affecting the movement of the curing mechanism 304, so as to ensure the curing effect of the curing mechanism 304, thereby improving the reliability of the reaction cavity structure.

[0090] Figure 13 FIG. is a schematic cross-sectional structure diagram of the telescopic member in a contracted state in the fourth reaction cavity structure provided by some embodiments of the present disclosure. Figure 14Schematic cross-sectional structure diagram of the fourth reaction chamber structure provided by some embodiments of the present disclosure when the telescopic member is in a stretched state.

[0091] With reference to Figure 13 and Figure 14 In some embodiments, the reaction chamber structure may further include: a baffle 305 and a telescopic member 315. The baffle 305 and the telescopic member 315 are located on top of the curing mechanism 304. The telescopic member 315 is telescopic in the horizontal direction X. The telescopic member 315 is connected to the baffle 305 and is used to drive the baffle 305 to move. The telescopic member 315 is connected to the controller. During the deposition of the film layer, the controller controls the telescopic member 315 to stretch, and the telescopic member 315 drives the baffle 305 to move. The baffle 305 is used to block the passage between the reaction chamber 310 and the accommodation chamber 320. After the film layer is deposited, the controller controls the telescopic member 315 to contract, and the telescopic member 315 drives the baffle 305 to move. The baffle 305 does not block the movement of the curing mechanism 304 in the vertical direction Y. During the deposition of the film layer, the controller controls the telescopic member 315 to stretch in the horizontal direction X, so that the baffle 305 blocks the passage between the reaction chamber 310 and the accommodation chamber 320, so as to prevent the reaction gas from entering the accommodation chamber 320 and polluting the curing mechanism 304. After the film layer is deposited, the controller controls the telescopic member 315 to contract in the horizontal direction X, so that the curing mechanism 304 can move in the vertical direction Y, so that the curing mechanism 304 can move from the accommodation chamber 320 to the reaction chamber 310 or from the reaction chamber 310 to the accommodation chamber 320. The setting of the baffle 305 is to prevent the reaction gas from polluting the curing mechanism 304 without affecting the movement of the curing mechanism 304, so as to ensure the curing effect of the curing mechanism 304, thereby improving the reliability of the reaction chamber structure.

[0092] It can be understood that the reaction chamber structure may not be provided with a baffle. When the target material layer is prepared on the surface of the wafer 11 and the wafer 11 is taken out, some by-products generated by the introduction of the reaction gas may be deposited on the surface of the curing mechanism 304 at this time. The cleaning gas can be introduced through the gas inlet mechanism 301 to clean the side wall of the reaction chamber body 300 while cleaning the curing mechanism 304, so as to ensure the normal operation of the curing mechanism 304 during the subsequent curing process and also improve the reliability of the reaction chamber structure.

[0093] Figure 15 Schematic cross-sectional structure diagram of the fifth reaction chamber structure provided by some embodiments of the present disclosure when the mirror is in a contracted state. Figure 16 Schematic cross-sectional structure diagram of the fifth reaction chamber structure provided by some embodiments of the present disclosure when the mirror is in a stretched state.

[0094] With reference to Figure 15 and Figure 16, in some embodiments, the curing mechanism 304 may be a light source curing mechanism, and the light source curing mechanism is used to provide a light beam to supply curing energy to the film layer; the reaction cavity structure may further include a reflector 306. The reflector 306 is located on top of the curing mechanism 304. One side of the reflector 306 facing away from the air inlet mechanism 301 is a reflecting surface 316. The reflecting surface 316 is used to reflect the light beam. The reflector 306 is telescopable in the horizontal direction X. The reflector 306 is connected to the controller. During the curing of the film layer, the controller is used to control the stretching of the reflector 306 so that at least part of the reflecting surface 316 of the reflector 306 faces the wafer 11. After the film layer is cured, the controller is used to control the contraction of the reflector 306 so that the reflector 306 does not block the movement of the curing mechanism 304 in the vertical direction Y. Herein, the period during the curing of the film layer means the period when the curing mechanism 304 supplies curing energy to the film layer; after the film layer is cured means the period after the film layer receives the curing energy and is converted into the target material layer and the curing mechanism 304 stops supplying the curing energy. During the curing of the film layer, the controller controls the stretching of the reflector 306 in the horizontal direction X so that at least part of the reflecting surface 325 extends out of the top part of the curing mechanism 304, and the light source curing mechanism supplies curing energy through the light beam. Such an arrangement can reflect part of the light rays emitted upward by the light source curing mechanism to the surface of the wafer 11 through the reflecting surface 316, thereby increasing the utilization rate of the light beam energy of the light source curing mechanism, and thus improving the practicability of the reaction cavity structure.

[0095] In some embodiments, during the deposition of the film layer, the controller controls the stretching of the reflector 306 in the horizontal direction X so that the reflector 306 blocks the passage between the reaction chamber 310 and the accommodation chamber 320. After the film layer is deposited, the controller controls the contraction of the reflector 306 so that the reflector 306 does not block the movement of the curing mechanism 304 in the vertical direction Y. Such an arrangement can use the reflector 306 as a baffle to block the passage between the reaction chamber 310 and the accommodation chamber 320 during the deposition of the film layer, so that the reflector 306 can not only increase the utilization rate of the light beam of the light source curing mechanism, but also protect the curing mechanism 304 from being contaminated during the deposition of the film layer, thus being beneficial to improving the reliability and practicability of the reaction cavity structure.

[0096] Continue to refer to Figure 4 , in some embodiments, the reaction cavity structure may include: a radio frequency (RF) power supply 307, and / or, a remote plasma source (RPS) 317. The radio frequency power supply 307 is used to provide the electric field required to form plasma. The remote plasma controller 317 is used to convert the gas into a plasma state.

[0097] The radio frequency power supply 307 may include at least one of a high-frequency radio frequency power supply and a low-frequency radio frequency power supply. The operating frequency of the high-frequency power supply is generally above 10 kHz, while the frequency of the low-frequency power supply is generally below 10 kHz.

[0098] The controller is connected to the radio frequency power supply 307 and can control the power of the radio frequency power supply 307.

[0099] In a specific example, the target material layer is a compressive stress silicon nitride layer, the reaction gases are SiH4, N2, and NH3, and the flow rate of each gas can be 0 sccm - 20000 sccm. The radio frequency power supply 307 uses a high-frequency power supply and a low-frequency power supply. Among them, the power of the high-frequency power supply is 1 W - 1500 W, the power of the low-frequency power supply is 0 W - 1000 W, the pressure in the reaction chamber 310 is 0.1 torr - 20 torr, and the temperature is 100 °C - 600 °C. The stress, thickness, uniformity, and optical constants of the compressive stress silicon nitride layer can be adjusted by adjusting the pressure in the reaction chamber 310, the gas flow rate and gas ratio of the reaction gases, and the magnitude of the high-frequency power supply / low-frequency power supply, etc.

[0100] It can be understood that when the reaction gases are introduced through the gas inlet mechanism 301, the reaction gases first pass through the radio frequency power supply 307 or the remote control plasma controller 317. After the reaction gases are converted into a plasma state, they enter the reaction chamber 310 through the gas inlet mechanism 301. When the curing gas required for film layer curing is introduced through the gas inlet mechanism 301 and it is not necessary for the curing gas to be converted into a plasma state, the curing gas can directly enter the reaction chamber 310 through the gas inlet mechanism 302. At this time, the curing gas does not need to pass through the radio frequency power supply 307 and the remote control plasma controller 317.

[0101] In some embodiments, the reaction chamber structure may include a ceramic kit 327. The ceramic kit 327 is located on the side wall of the reaction chamber 310 and is used to protect the reaction chamber 310.

[0102] In the reaction chamber structure of the above embodiments, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber 310. After the film layer is deposited, the curing mechanism 304 can be moved in the vertical direction Y so that the curing mechanism 304 is in the reaction chamber 310, providing curing energy for the film layer to convert it into the target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art, which can save a lot of time and thus improve the preparation efficiency of the target material layer.

[0103] Some other embodiments of the present disclosure further provide a reaction chamber structure. This reaction chamber mechanism is substantially the same as the reaction chamber mechanism provided in the foregoing embodiments. The main difference is that in the reaction chamber mechanism provided in the following embodiments, the curing mechanism includes at least one movable curer. The following will describe this reaction chamber mechanism in detail with reference to the accompanying drawings. It should be noted that the same or corresponding features as those in the foregoing embodiments will not be described in detail hereinafter to avoid repetition. In the case of no contradiction, the corresponding descriptions in the foregoing embodiments also apply to the corresponding features in the following embodiments.

[0104] Figure 17 It is a schematic cross-sectional structure diagram of the second telescopic mechanism in a contracted state in the reaction chamber structure provided by some other embodiments of the present disclosure. Figure 18 It is a schematic cross-sectional structure diagram of the second telescopic mechanism in a stretched state in the reaction chamber structure provided by some other embodiments of the present disclosure.

[0105] It should be noted that Figure 17 and Figure 18 show the case where the curing mechanism includes two movable curers. In fact, the number of movable curers in the curing mechanism can also be other values, and the embodiments of the present disclosure do not limit the number of movable curers.

[0106] With reference to Figure 17 and Figure 18 , the reaction chamber structure includes a reaction chamber body 400, an air inlet mechanism 401, an air extraction port 402, a carrier 403, a curing mechanism 404, and a controller (not shown). The reaction chamber body 400 includes a reaction chamber 410 and a receiving chamber 420 that is connected to the reaction chamber 410 in the vertical direction Y, and the reaction chamber 410 is located above the receiving chamber 420. The air inlet mechanism 401 is disposed at the top of the reaction chamber 410. The air inlet mechanism 401 has an air inlet hole 411 and an air inlet channel 421 connected to the air inlet hole 411. The air inlet channel 421 is connected to the reaction chamber 410, and the air inlet hole 411 is used to connect to an air inlet pipe for supplying gas. The air extraction port 402 is connected to the reaction chamber 410. The carrier 403 is used to carry the wafer 11, and the carrier 403 is located in the reaction chamber 410. The curing mechanism 404 is disposed in the receiving chamber 420 and can move up and down in the vertical direction Y in the reaction chamber 410. The curing mechanism 404 is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is connected to the curing mechanism 404 and is used to control the movement of the curing mechanism 404 in the vertical direction Y so that the curing mechanism 404 is located in the receiving chamber 420 during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism 404 to move into the reaction chamber 410 in the vertical direction Y and control the curing mechanism 404 to provide curing energy for the film layer.

[0107] It should be noted that the reaction chamber body 400, the gas inlet mechanism 401, the air extraction port 402, the carrier stage 403, the radio frequency power supply 407, the remote control plasma controller 417, and the ceramic kit 427 in the embodiments of the present disclosure may refer to the reaction chamber body 300, the gas inlet mechanism 301, the air extraction port 302, the movable carrier stage 303, the radio frequency power supply 307, the remote control plasma controller 317, and the ceramic kit 327 in the previous embodiment, which will not be elaborated here.

[0108] In some embodiments, the curing mechanism 404 may include at least one movable curer 424; the reaction chamber structure includes: a first telescopic mechanism 408 and a second telescopic mechanism 418. The first telescopic mechanism 408 is disposed in the accommodation chamber 420. The first telescopic mechanism 408 is telescopic in the vertical direction Y. The first telescopic mechanism 408 is connected to the curing mechanism 404 and the controller. After the wafer 11 is deposited with a film layer, the controller controls the first telescopic mechanism 408 to stretch in the vertical direction Y to drive the curing mechanism 404 to move into the reaction chamber to provide curing energy for the film layer. After the film layer is converted into a target material layer, the controller controls the first telescopic mechanism 408 to contract in the vertical direction Y to drive the curing mechanism 404 to move into the accommodation chamber 420. The first telescopic mechanism 408 is connected to the second telescopic mechanism 418. The second telescopic mechanism 418 is telescopic in the horizontal direction X. The second telescopic mechanism 418 is connected to the movable curer 424 and the controller. When the movable curer 424 is located in the reaction chamber 410, the controller controls the second telescopic mechanism 418 to stretch to drive the movable curer 424 to move so that the movable curer 424 is located directly above the wafer 11, and the controller controls the movable curer 424 to provide curing energy. After curing the film layer, the controller controls the movable curer 424 to stop providing curing energy, and the controller controls the second telescopic mechanism 418 to contract so that the movable curer 424 does not block the movement of the curing mechanism 404 in the vertical direction Y.

[0109] After depositing the film layer, the first telescopic mechanism 408 moves in the vertical direction Y, driving the movable curing device 424 to move into the reaction chamber 410. The second telescopic mechanism 418 stretches in the horizontal direction X, driving the movable curing device 424 to move, so that the movable curing device 424 is located directly above the wafer 11, so that the movable curing device 424 can provide curing energy for the film layer on the surface of the wafer 11. And because the movable curing device 424 is located directly above the wafer 11, the curing energy received by the central area of the film layer on the surface of the wafer 11 and the edge area surrounding the central area in the circumferential direction can tend to be consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of preparing the target material layer of the reaction chamber structure. When the cured film layer is converted into the target material layer, the movable curing device 424 stops providing the curing energy. The second telescopic mechanism 418 contracts in the horizontal direction X, and the first telescopic mechanism 408 contracts in the vertical direction Y, so that the movable curing device 424 returns to the accommodation chamber 420. In addition, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber 410. After the film layer is deposited, the curing mechanism can move in the vertical direction Y, so that the curing mechanism 404 is in the reaction chamber 410, providing curing energy for the film layer to convert it into the target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art, which can save a lot of time, thereby improving the preparation efficiency of the target material layer.

[0110] The first telescopic mechanism 408 is used to drive the curing mechanism 404 to move in the vertical direction Y. During the deposition of the film layer, the first telescopic mechanism 408 contracts, so that the curing mechanism 404 is located in the accommodation chamber 420. After the film layer is deposited, the first telescopic mechanism 408 stretches, so that the curing mechanism 408 is located in the reaction chamber 410, providing curing energy for the film layer.

[0111] The second telescopic mechanism 418 is used to drive the movable curing device 424 to move in the horizontal direction X.

[0112] Some other embodiments of the present disclosure further provide a reaction chamber structure. This reaction chamber mechanism is substantially the same as the reaction chamber mechanism provided in the foregoing embodiments. The main difference is that in the reaction chamber mechanism provided in the following embodiments, the curing mechanism includes at least one rotatable curing device. The following will describe this reaction chamber mechanism in detail with reference to the accompanying drawings. It should be noted that for the same or corresponding features as those in the foregoing embodiments, in order to avoid repetition, they will not be described in detail below. Without contradiction, the corresponding descriptions of the foregoing embodiments also apply to the corresponding features of the following embodiments.

[0113] Figure 19 It is a schematic cross-sectional structure diagram of the rotatable curing device parallel to the vertical direction in the reaction chamber structure provided in some other embodiments of the present disclosure. Figure 20Schematic cross-sectional structure diagram of the rotatable curing device parallel to the horizontal direction in the reaction chamber structure provided by some other embodiments of the present disclosure.

[0114] It should be noted that Figure 19 and Figure 20 illustrate the case where the curing mechanism includes two rotatable curing devices. In fact, the number of rotatable curing devices in the curing mechanism can also be other values, and the embodiments of the present disclosure do not limit the number of rotatable curing devices.

[0115] With reference to Figure 19 and Figure 20 , the reaction chamber structure includes a reaction chamber body 500, an air inlet mechanism 501, an air extraction port 502, a carrier stage 503, a curing mechanism 504, and a controller (not shown). The reaction chamber body 500 includes a reaction chamber 510 and a receiving chamber 520 that is connected to the reaction chamber 510 in the vertical direction Y, and the reaction chamber 510 is located above the receiving chamber 520. The air inlet mechanism 501 is disposed at the top of the reaction chamber 510. The air inlet mechanism 501 has an air inlet hole 511 and an air inlet channel 521 connected to the air inlet hole 511. The air inlet channel 521 is connected to the reaction chamber 510, and the air inlet hole 511 is used to connect to an air inlet pipe that provides gas. The air extraction port 502 is connected to the reaction chamber 510. The carrier stage 503 is used to carry the wafer 11, and the carrier stage 503 is located in the reaction chamber 510. The curing mechanism 504 is disposed in the receiving chamber 520 and can move up and down in the vertical direction Y in the reaction chamber 510. The curing mechanism 504 is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is connected to the curing mechanism 504 and is used to control the movement of the curing mechanism 504 in the vertical direction Y so that the curing mechanism 504 is located in the receiving chamber 520 during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism 504 to move into the reaction chamber 510 in the vertical direction Y and control the curing mechanism 504 to provide curing energy for the film layer.

[0116] It should be noted that the reaction chamber body 500, the air inlet mechanism 501, the air extraction port 502, the carrier stage 503, the radio frequency power supply 507, the remote control plasma controller 517, and the ceramic kit 527 in the embodiments of the present disclosure can refer to the reaction chamber body 300, the air inlet mechanism 301, the air extraction port 302, the movable carrier stage 303, the radio frequency power supply 307, the remote control plasma controller 317, and the ceramic kit 327 in the above embodiments, and will not be described in detail here.

[0117] In some embodiments, the curing mechanism 504 may include at least one rotatable curer 534. The reaction chamber structure includes: a first telescopic mechanism 508 and a rotary fixing member 509. The first telescopic mechanism 508 is disposed within the reaction chamber 510. The first telescopic mechanism 508 is telescopic in the vertical direction Y. The first telescopic mechanism 508 is connected to the curing mechanism 504 and is connected to the controller. After the deposition of the film layer, the controller controls the first telescopic mechanism 508 to stretch in the vertical direction Y to drive the curing mechanism 504 to move into the reaction chamber 510 to provide curing energy for the film layer. After the film layer is converted into the target material layer, the controller controls the first telescopic mechanism 508 to contract in the vertical direction Y to drive the curing mechanism 504 to move into the accommodation chamber 520. The rotary fixing member 509 is connected to the first telescopic mechanism 508, and the rotary fixing member 509 is rotatably connected to the rotatable curer 534; the controller is connected to the rotatable curer 534. After the deposition of the film layer and when the curing mechanism 504 is located in the reaction chamber 510, the controller controls the rotatable curer 534 to rotate around the rotary fixing member 509 to be parallel to the horizontal direction X so that at least a part of the rotatable curer 534 is directly above the wafer 11, and the controller controls the rotatable curer 534 to provide curing energy. After curing the film layer, the controller controls the rotatable curer 534 to stop providing curing energy, and the controller controls the rotatable curer 534 to rotate around the rotary fixing member 509 to be parallel to the vertical direction Y so that the rotatable curer 534 fits against the first telescopic mechanism 508.

[0118] After the deposition of the film layer, the first telescopic mechanism 508 moves in the vertical direction Y to drive the rotatable curer 534 to move into the reaction chamber 510. The controller controls the rotatable controller 534 to rotate to be parallel to the horizontal direction X so that the rotatable curer 534 is directly above the wafer 11, so that the rotatable curer 534 can provide curing energy for the film layer on the surface of the wafer 11. Since the rotatable curer 534 is directly above the wafer 11, the curing energy received by the central region and the peripheral edge region surrounding the central region of the film layer on the surface of the wafer 11 can tend to be consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the reaction chamber structure for preparing the target material layer. When the cured film layer is converted into the target material layer, the rotatable curer 534 stops providing the curing energy, the rotatable curer 534 rotates to be parallel to the vertical direction Y, and the first telescopic mechanism 508 contracts in the vertical direction Y to return the curing mechanism 504 to the accommodation chamber 520. In addition, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber 510. After the film layer is deposited, the curing mechanism can move in the vertical direction Y to make the curing mechanism 504 in the reaction chamber 510 to provide curing energy for the film layer to be converted into the target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art, which can save a lot of time, thereby improving the preparation efficiency of the target material layer.

[0119] The rotating fixing member 509 can be components such as a rotating bearing or a slewing bearing.

[0120] Some other embodiments of the present disclosure further provide a reaction chamber structure. This reaction chamber mechanism is substantially the same as the reaction chamber mechanism provided in the foregoing embodiments. The main difference is that in the reaction chamber mechanism provided in the following embodiments, the curing mechanism includes at least one movable curer. The following will describe this reaction chamber mechanism in detail with reference to the drawings. It should be noted that the same or corresponding features as those in the foregoing embodiments will not be described in detail below to avoid redundancy. In the case of no contradiction, the corresponding descriptions of the foregoing embodiments also apply to the corresponding features of the following embodiments.

[0121] Figure 21 FIG. is a schematic cross-sectional structure diagram of the retractable curer in the reaction chamber structure provided by some other embodiments of the present disclosure in a retracted state. Figure 22 FIG. is a schematic cross-sectional structure diagram of the retractable curer in the reaction chamber structure provided by some other embodiments of the present disclosure in a stretched state.

[0122] It should be noted that Figure 21 and Figure 22 illustrate the case where the curing mechanism includes two retractable curers. In fact, the number of retractable curers in the curing mechanism can also be other values, and the embodiments of the present disclosure do not limit the number of retractable curers.

[0123] With reference to Figure 21 and Figure 22, the reaction chamber structure includes a reaction chamber body 600, an air inlet mechanism 601, an air extraction port 602, a carrier stage 603, a curing mechanism 604, and a controller (not shown). The reaction chamber body includes a reaction chamber 610 and a receiving chamber 620 that is connected to the reaction chamber 610 in the vertical direction Y, and the reaction chamber 610 is located above the receiving chamber 620. The air inlet mechanism 601 is disposed at the top of the reaction chamber 610. The air inlet mechanism 601 has an air inlet hole 611 and an air inlet channel 621 connected to the air inlet hole 611. The air inlet channel 621 is connected to the reaction chamber 610. The air inlet hole 611 is used to connect to an air inlet pipe that supplies gas. The air extraction port 602 is connected to the reaction chamber 610. The carrier stage 603 is used to carry the wafer 11, and the carrier stage 603 is located in the reaction chamber 610. The curing mechanism 604 is disposed in the receiving chamber 620 and can move up and down in the vertical direction Y in the reaction chamber 610. The curing mechanism 604 is used to provide curing energy for the film layer to convert the film layer into a target material layer. The controller is connected to the curing mechanism 604 and is used to control the movement of the curing mechanism 604 in the vertical direction Y so that the curing mechanism 604 is located in the receiving chamber 620 during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism 604 to move into the reaction chamber 610 in the vertical direction Y and control the curing mechanism 604 to provide curing energy for the film layer.

[0124] It should be noted that the reaction chamber body 600, the air inlet mechanism 601, the air extraction port 602, the carrier stage 603, the radio frequency power supply 607, the remote control plasma controller 617, and the ceramic kit 627 in the embodiments of the present disclosure can refer to the reaction chamber body 300, the air inlet mechanism 301, the air extraction port 302, the movable carrier stage 303, the radio frequency power supply 307, the remote control plasma controller 317, and the ceramic kit 327 in the above embodiments, and will not be described in detail here.

[0125] In some embodiments, the curing mechanism 604 may include at least one retractable curer 644. The retractable curer 644 is retractable in the horizontal direction X and is connected to the controller. When a film layer is deposited and the curing mechanism 604 is located in the reaction chamber 610, the controller controls the retractable curer 644 to stretch so that at least a part of the retractable curer 644 is located directly above the wafer 11, and the controller controls the retractable curer 644 to provide curing energy. After the film layer is converted into the target material layer, the controller controls the retractable curer 644 to stop providing curing energy, and the controller controls the retractable curer 644 to contract so that the retractable curer 644 does not block the movement of the fixing mechanism 604 in the vertical direction Y. The reaction chamber structure further includes: a first telescopic mechanism 608. The first telescopic mechanism 608 is disposed in the accommodation chamber 620. The first telescopic mechanism 608 is telescopic in the vertical direction Y. The first telescopic mechanism 608 is connected to the curing mechanism 604 and is connected to the controller. When a film layer is deposited, the controller controls the first telescopic mechanism 608 to stretch in the vertical direction Y to drive the curing mechanism 604 to move into the reaction chamber 610 to provide curing energy for the film layer. After the film layer is cured, the controller controls the first telescopic mechanism 608 to contract in the vertical direction Y to drive the curing mechanism 604 to move into the accommodation chamber 620.

[0126] After a film layer is deposited, the first telescopic mechanism 608 moves in the vertical direction Y to drive the curing mechanism 604 to move into the reaction chamber 610. The retractable curer 644 stretches in the horizontal direction X so that the retractable curer 644 is located directly above the wafer 11, so that the retractable curer 644 can provide curing energy for the film layer on the surface of the wafer 11. And since the retractable curer 644 is located directly above the wafer 11, the curing energy received by the central region and the peripheral edge region surrounding the central region of the film layer on the surface of the wafer 11 can tend to be consistent, thereby improving the reliability of the cured film layer, and further improving the reliability of the reaction chamber structure for preparing the target material layer. When the cured film layer converts the film layer into the target material layer, the retractable curer 644 stops providing the curing energy. The retractable curer 644 contracts in the horizontal direction X, and the first telescopic mechanism 608 contracts in the vertical direction Y to return the curing mechanism 604 to the accommodation chamber 620.

[0127] In the reaction chamber structure of the above embodiment, the deposition of the film layer and the curing of the film layer are carried out in the same reaction chamber. After the film layer is deposited, the curing mechanism can move in the vertical direction so that the curing mechanism is in the reaction chamber to provide curing energy for the film layer to convert it into the target material layer. In this process, there is no need to add steps such as moving the wafer to other chambers in the related art, which can not only save a lot of time, thereby improving the preparation efficiency of the target material layer, but also avoid increasing defects due to the movement of the wafer between different chambers, thereby improving the reliability of preparing the target material layer.

[0128] Correspondingly, another embodiment of the present disclosure further provides a deposition apparatus having the reaction chamber structure of any of the above embodiments. For the same or corresponding parts as those in the previous embodiment, reference may be made to the corresponding description of the previous embodiment, which will not be elaborated in detail hereinafter.

[0129] The deposition apparatus includes the reaction chamber structure described in any of the above embodiments.

[0130] The deposition apparatus can be used to realize the preparation of a target material layer by flowable chemical vapor deposition. The deposition apparatus can also be used to realize the preparation of a target material layer by other vapor phase chemical depositions. The other vapor phase chemical depositions can be atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), ultrahigh vacuum chemical vapor deposition (UHVCVD), metal-organic chemical vapor deposition (MOCVD), or plasma-enhanced chemical vapor deposition (PECVD), etc.

[0131] Those of ordinary skill in the art can understand that the above embodiments are specific embodiments for implementing the present disclosure. In actual applications, various changes can be made in form and details without departing from the spirit and scope of the present disclosure. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the scope defined by the claims.

Claims

1. A reaction chamber structure is applied to a deposition device, characterized in that, Comprising: A reaction chamber body, wherein the reaction chamber body includes a reaction chamber and a receiving chamber that is vertically connected to the reaction chamber, and the reaction chamber is located above the receiving chamber; An air inlet mechanism, which is arranged at the top of the reaction chamber. The air inlet mechanism has an air inlet hole and an air inlet channel connected to the air inlet hole. The air inlet channel is connected to the reaction chamber, and the air inlet hole is used to connect to an air inlet pipe that supplies gas; An air extraction port, which is connected to the reaction chamber; A carrier stage, which is used to carry a wafer, and the carrier stage is located in the reaction chamber; A curing mechanism, which is arranged in the receiving chamber and can move up and down in the vertical direction in the reaction chamber. The curing mechanism is used to provide curing energy for the film layer to convert the film layer into a target material layer; A controller, which is connected to the curing mechanism and is used to control the curing mechanism to move in the vertical direction, so that the curing mechanism is located in the receiving chamber during the deposition of the film layer, and after the deposition of the film layer, control the curing mechanism to move into the reaction chamber in the vertical direction, and control the curing mechanism to provide the curing energy for the film layer; the controller controls the curing mechanism to alternately move between the receiving chamber and the reaction chamber.

2. The reaction chamber structure according to claim 1, wherein The cross-sectional area of the receiving chamber perpendicular to the vertical direction is smaller than the cross-sectional area of the reaction chamber perpendicular to the vertical direction.

3. The reaction cavity structure according to claim 2, wherein The receiving chamber is an annular chamber connected to the bottom of the reaction chamber; the curing mechanism is circumferentially arranged in the receiving chamber, or the curing mechanism includes a plurality of curing devices, and the curing devices are circumferentially arranged in the receiving chamber.

4. The reaction cavity structure according to claim 2, wherein, The receiving chamber includes a plurality of circumferentially arranged sub-receiving chambers, and each sub-receiving chamber is connected to the bottom of the reaction chamber. The curing mechanism includes a plurality of curing devices, and the curing devices are arranged in the sub-receiving chambers.

5. The reaction cavity structure according to claim 1, characterized in that, The reaction chamber structure further includes: A baffle, which is located in the receiving chamber. The baffle is telescopable in the horizontal direction and is connected to the controller. During the deposition of the film layer, the controller controls the baffle to stretch so that the baffle blocks the passage between the reaction chamber and the receiving chamber. After the deposition of the film layer, the controller controls the baffle to contract so that the baffle does not block the vertical movement of the curing mechanism.

6. The reaction chamber structure according to claim 1, wherein The curing mechanism is a light source curing mechanism, and the light source curing mechanism is used to provide a light beam to provide the curing energy for the film layer; The reaction chamber structure further includes: A reflector, which is located on top of the curing mechanism. The side of the reflector facing away from the air inlet mechanism is a reflecting surface, and the reflecting surface is used to reflect the light beam. The reflector is telescopable in the horizontal direction and is connected to the controller. During the curing of the film layer, the controller is used to control the reflector to stretch so that at least part of the reflecting surface faces the wafer. After the curing of the film layer, the controller is used to control the reflector to contract so that the reflector does not block the vertical movement of the curing mechanism.

7. The reaction cavity structure according to claim 1, characterized in that, The curing mechanism includes at least one movable curer; The reaction chamber structure further includes: A first telescopic mechanism, which is arranged in the accommodation cavity. The first telescopic mechanism is telescopic in the vertical direction. The first telescopic mechanism is connected to the curing mechanism and the controller. After depositing the film layer, the controller controls the first telescopic mechanism to stretch in the vertical direction to drive the curing mechanism to move into the reaction chamber to provide the curing energy for the film layer. After curing the film layer, the controller controls the first telescopic mechanism to contract in the vertical direction to drive the curing mechanism to move into the accommodation cavity; A second telescopic mechanism, the first telescopic mechanism is connected to the second telescopic mechanism. The second telescopic mechanism is telescopic in the horizontal direction. The second telescopic mechanism is connected to the movable curer and the controller. When the movable curer is in the reaction chamber, the controller controls the second telescopic mechanism to stretch to drive the movable curer to move so that the movable curer is located directly above the wafer, and the controller controls the movable curer to provide the curing energy. After curing the film layer, the controller controls the movable curer to stop providing the curing energy, and the controller controls the second telescopic mechanism to contract so that the movable curer does not block the movement of the first telescopic mechanism in the vertical direction.

8. The reaction cavity structure according to claim 1, wherein The curing mechanism includes at least one rotatable curer; The reaction chamber structure further includes: A first telescopic mechanism, which is arranged in the reaction chamber. The first telescopic mechanism is telescopic in the vertical direction. The first telescopic mechanism is connected to the curing mechanism and the controller. After depositing the film layer, the controller controls the first telescopic mechanism to stretch in the vertical direction to drive the curing mechanism to move into the reaction chamber to provide the curing energy for the film layer. After curing the film layer, the controller controls the first telescopic mechanism to contract in the vertical direction to drive the curing mechanism to move into the accommodation cavity; A rotation fixing member, the rotation fixing member is connected to the first telescopic mechanism, and the rotation fixing member is rotatably connected to the rotatable curer; the controller is connected to the rotatable curer. When the curing mechanism is in the reaction chamber, the controller controls the rotatable curer to rotate around the rotation fixing member to be parallel to the horizontal direction so that at least part of the rotatable curer is located directly above the wafer, and the controller controls the rotatable curer to provide the curing energy. After curing the film layer, the controller controls the rotatable curer to stop providing the curing energy, and the controller controls the rotatable curer to rotate around the rotation fixing member to be parallel to the vertical direction so that the rotatable curer fits the first telescopic mechanism.

9. A deposition device, characterized in that, Including the reaction chamber structure according to any one of claims 1 to 8.

Images