A simulation circuit for a chalcogenide threshold shift device

Abstract

The present application provides a simulation circuit of a sulfur-based threshold transition device, which belongs to the field of electronic simulation technology. The simulation circuit includes: a threshold switching module, a threshold comparison module, a delay module and a resistance change module; the threshold switching module is used to select the input voltage of one of the two input terminals and transmit it to the inverting input terminal of the threshold comparison module under the output voltage drive of the threshold comparison module input at the data selection terminal; the threshold comparison module is used to compare the voltage of the in-phase input terminal and the inverting input terminal and output different output voltages; the delay module is used to output a resistance change control voltage by delaying the output voltage of the threshold comparison module on the time domain waveform; the resistance change module is used to be controlled by the resistance change control voltage to simulate the threshold transition process of the sulfur-based threshold transition device. The present application can well match the DC and pulse characteristics of the actual device, and has the characteristics of simple circuit structure, high simulation accuracy, high efficiency and reliability.

Description

Technical Field

[0001] The present application belongs to the field of electronic simulation technology, and more specifically, relates to a simulation circuit of a chalcogenide threshold transition device. Background Art

[0002] With the advent of the data age and the growing demand for computing power, three-dimensional storage technology is gaining popularity in data-intensive electronic products. One of the keys to advancements in 3D storage technology lies in the comprehensive optimization of gating device performance. Ovonic Threshold Switch (OTS) devices, with their low leakage current, high drive current, and three-dimensional stackability, stand out among numerous gating devices, becoming a preferred choice for 3D storage technology.

[0003] As a key research method in modern science, simulation technology has been widely used in the modeling and analysis of semiconductor devices. Modern electronic circuit design widely uses electronic design automation (EDA) to design circuit models for semiconductor devices. This technology is used to complete early simulation evaluations, design verification, and guide subsequent production and manufacturing, making it a crucial step in industrial production.

[0004] Currently, the modeling methods for chalcogenide threshold transition devices mainly start from the device electrical characteristics and establish a behavioral-level model based on the current-voltage relationship obtained from the test, which does not involve the physical mechanism of the device. However, there are two problems with this method. First, the carrier transition mechanism between traps within the material dominates the DC characteristics of the chalcogenide threshold transition device. The above method does not consider the emission characteristics of the device in the subthreshold region, resulting in poor curve fitting between the actual electrical results and the simulation results, low model accuracy, and thus lack of specificity. In addition, as a gating device, the quality of the pulse characteristics of the chalcogenide threshold transition device is a key indicator in actual engineering applications. The above method rarely simulates the pulse switching behavior of the device. Therefore, starting from the Poole-Frenkel (PF) emission characteristics and pulse switching behavior of the chalcogenide threshold transition device in the subthreshold region, establishing a typical simulation circuit model of the chalcogenide threshold transition device is of great significance for understanding the transition mechanism of the chalcogenide threshold transition device and optimizing the device performance.

[0005] Therefore, there is an urgent need for a simulation circuit model that comprehensively considers the DC and pulse characteristics of sulfur-based threshold transition devices, which can be specifically used for the design optimization of selection devices in three-dimensional storage technology. Summary of the Invention

[0006] In response to the defects of the prior art, the purpose of this application is to provide a simulation circuit for a sulfur-based threshold transition device, aiming to solve the problem that the existing modeling method of sulfur-based threshold transition devices does not take into account the emission characteristics of the device in the subthreshold region, resulting in poor curve fitting between actual electrical results and simulation results.

[0007] To achieve the above objectives, in a first aspect, the present application provides a simulation circuit of a chalcogenide threshold shift device, comprising: a threshold switching module, a threshold comparison module, a delay module, and a resistance switching module;

[0008] The threshold switching module is a multiplexer, and the two input terminals input voltage V th +V bot and V h +V bot , the output end of the threshold switching module is connected to the inverting input end of the threshold comparison module; the data selection end of the threshold switching module is connected to the output end of the threshold comparison module; wherein, V th is the threshold voltage of the chalcogenide threshold transition device, V h is the holding voltage of the chalcogenide threshold transition device; V bot is the bottom electrode voltage of the sulphur-based threshold transition device; the threshold comparison module is an operational amplifier, whose non-inverting input terminal inputs the top electrode voltage of the sulphur-based threshold transition device, and whose output terminal is connected to the delay module; the output terminal of the delay module is connected to the input terminal of the resistance switching module;

[0009] The threshold switching module is used to select the input voltage of one of the two input terminals and transmit it to the inverting input terminal of the threshold comparison module under the output voltage of the threshold comparison module input at the data selection terminal; the threshold comparison module is used to compare the voltage of the in-phase input terminal and the inverting input terminal, and output different output voltages; the delay module is used to simulate the pulse switching behavior of the sulfur-based threshold transition device by delaying the output voltage of the threshold comparison module on the time domain waveform, and output the resistive control voltage; the resistive module is used to be controlled by the resistive control voltage to simulate the threshold transition process of the sulfur-based threshold transition device; wherein, the current flowing into the resistive module is obtained through the top electrode voltage, bottom electrode voltage, low-resistance resistance and subthreshold current obtained based on the Poole-Frank emission model of the sulfur-based threshold transition device.

[0010] Further preferably, the current I flowing into the resistive switching module is:

[0011]

[0012] I off =Ve βV

[0013] Where V is the difference between the top electrode voltage and the bottom electrode voltage of the sulfur-based threshold transition device. top -Vbot ;I off is the subthreshold current obtained based on the Poole-Frank emission model, corresponding to the off-state current of the chalcogenide threshold transition device; α and β are the fitting coefficients based on the chalcogenide threshold transition device, set according to the subthreshold current of the actual device; R on It is the fixed low-resistance resistor of the resistive switching module.

[0014] Further preferably, in the threshold switching module, when the voltage of the data selection terminal is 1V, the output voltage V mux The voltage V at the first input terminal th +V bot ; When the voltage at the data selection terminal is 0, the output voltage V mux The voltage V at the second input terminal h +V bot .

[0015] Further preferably, in the threshold comparison module, when the voltage of the non-inverting input terminal is greater than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 1V; when the voltage of the non-inverting input terminal is less than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 0.

[0016] Further preferably, the resistive control voltage in the delay module is compared with the output voltage of the threshold comparison module, and the signal waveform remains unchanged, and there is only a lag on the time scale. The delay time is set according to the actual turn-on time of the sulfur-based threshold conversion device.

[0017] Further preferably, the resistance of the resistive switching module is regulated by a resistive switching control voltage. When the resistive switching control voltage is 1V, the resistive switching module is in a fixed low resistance state, corresponding to the on-state resistance of the sulfur-based threshold transition device; when the resistive switching control voltage is 0, the resistive switching module is in a variable high resistance state, corresponding to the off-state resistance of the sulfur-based threshold transition device.

[0018] Further preferably, the chalcogenide threshold transition device comprises: a top electrode layer, a bottom electrode layer, and a functional layer located between the top electrode layer and the bottom electrode layer; the top electrode layer and the bottom electrode layer are both made of inert electrode materials; the functional layer is made of a tellurium-based OTS material doped with a single element or multiple elements, or a selenium-based OTS material doped with a single element or multiple elements, or a sulfur-based OTS material doped with a single element or multiple elements;

[0019] Among them, the inert electrode material is one or more of Pt, W, Au, Ru, Al, TiN, TiW, Ta, TaN, IrO2, ITO and IZO.

[0020] Further preferably, in the process of the voltage applied to the sulfur-based threshold transition device increasing from zero to the threshold voltage, the sulfur-based threshold transition device is in a high-resistance state; when the voltage applied to the sulfur-based threshold transition device exceeds the threshold voltage, the sulfur-based threshold transition device is in a low-resistance state; when the voltage applied to the sulfur-based threshold transition device decreases and is less than the holding voltage, the sulfur-based threshold transition device spontaneously returns to the high-resistance state; wherein the threshold voltage is greater than the holding voltage.

[0021] In a second aspect, the present application provides a simulation circuit based on a chalcogenide threshold transition device, and a corresponding simulation method based on the chalcogenide threshold transition device, comprising the following steps:

[0022] Driven by the output voltage of the threshold comparison module inputted at the data selection terminal, the input voltage of one input terminal of the threshold switching module is selected and transmitted to the inverting input terminal of the threshold comparison module;

[0023] Comparing the voltages of the non-inverting input terminal and the inverting input terminal of the threshold comparison module to obtain the output voltage of the threshold comparison module;

[0024] By delaying the output voltage of the threshold comparison module in the time domain waveform, the pulse switching behavior of the sulfur-based threshold transition device is simulated and the resistance switching control voltage is output;

[0025] Under the control of the resistance switching control voltage, the threshold transition process of the sulfur-based threshold transition device is simulated.

[0026] Further preferably, the specific implementation method of the simulation method includes the following steps:

[0027] Step S1: Use the data selection terminal to receive the output voltage of the threshold comparison module. When the output voltage of the threshold comparison module is 1V, the output voltage of the threshold switching module is V th +V bot When the output voltage of the threshold comparison module is 0, the output voltage of the threshold switching module is V h +V bot ;

[0028] Step S2: The output voltage of the threshold switching module is transmitted to the inverting input terminal of the threshold comparison module, and the top electrode voltage of the chalcogenide threshold shift device is input to the non-inverting input terminal of the threshold comparison module; when the voltage of the non-inverting input terminal is greater than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 1V; when the voltage of the non-inverting input terminal is less than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 0, and the process goes to step S3, and the output voltage of the threshold comparison module is fed back to step S1 at the same time;

[0029] Step S3: Delay processing is performed on the output voltage of the threshold comparison module to obtain the resistance switching control voltage;

[0030] Step S4: Transmitting the resistive switching control voltage to the resistive switching module. When the resistive switching control voltage is 1V, the resistive switching module is in a low resistance state, corresponding to the on-state resistance of the sulfur-based threshold transition device; when the resistive switching control voltage is 0, the resistive switching module is in a variable high resistance state, corresponding to the off-state resistance of the sulfur-based threshold transition device.

[0031] In general, the above technical solutions conceived by this application have the following beneficial effects compared with the existing technologies:

[0032] The present application provides a simulation circuit of a sulfur-based threshold transition device, including a threshold switching module, a threshold comparison module, a delay module, and a resistive switching module. Starting from the switching mechanism of the device, the model improves the curve fitting degree between the current-voltage simulation curve and the actual electrical characteristics; the simulation circuit model provided by the present application comprehensively considers the subthreshold region emission of the sulfur-based threshold transition device (the current flowing into the resistive switching module is obtained by the top electrode voltage, the bottom electrode voltage, the low-resistance resistance, and the subthreshold current obtained based on the Pull-Frank emission model, and the fitting coefficient is also set according to the subthreshold current of the actual device) and the pulse switching behavior (the delay module is used to simulate the pulse switching behavior of the sulfur-based threshold transition device by delaying the output voltage of the threshold comparison module on the time domain waveform). It can well match the DC and pulse characteristics of the actual device, has the characteristics of simple circuit structure, high simulation accuracy, high efficiency and reliability, and is conducive to understanding device characteristics and guiding industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 Schematic diagram of a simulation circuit of a chalcogenide threshold transition device provided in an embodiment of the present application;

[0034] Figure 2 This is a flowchart of a simulation circuit of a chalcogenide threshold transition device provided in an embodiment of the present application;

[0035] Figure 3 This is a DC measurement diagram of a SiTe chalcogenide threshold transition device and a DC simulation diagram of its circuit model provided in an embodiment of the present application;

[0036] FIG4( a ) is a measured current response diagram of a SiTe chalcogenide threshold transition device under a triangular pulse according to an embodiment of the present application;

[0037] FIG4( b ) is a simulation diagram of the current response of a SiTe chalcogenide threshold transition device circuit under a triangular pulse according to an embodiment of the present application;

[0038] FIG4( c ) is a simulation diagram of internal signals of a SiTe chalcogenide threshold transition device circuit under a triangular pulse according to an embodiment of the present application;

[0039] FIG5( a ) is a graph showing the measured pulse turn-on speed of a SiTe chalcogenide threshold transition device provided in an embodiment of the present application;

[0040] FIG5( b ) is a pulse turn-on speed simulation diagram of a SiTe sulfide threshold transition device circuit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit this application.

[0042] In order to meet the demand for developing high-precision chalcogenide threshold transition device simulation circuits, the present application provides a chalcogenide threshold transition device simulation circuit, including: a threshold switching module, a threshold comparison module, a delay module, and a resistance switching module;

[0043] The threshold switching module is composed of a two-choose-one multiplexer. The voltages of the "1" input terminal and the "0" input terminal of the multiplexer are V th +V bot and V h +V bot , where V th is the threshold voltage of the chalcogenide threshold transition device, V h is the holding voltage of the chalcogenide threshold transition device, V bot is the bottom electrode voltage of the sulfur-based threshold transition device; the data selection terminal sel of the threshold switching module is affected by the output voltage V o drive;

[0044] The threshold comparison module is composed of an ideal operational amplifier, the non-inverting input of the operational amplifier is connected to the top electrode voltage V top Connect, the inverting input terminal is connected to the output terminal of the threshold switching module;

[0045] The delay module can realize the delay of the output signal and the input signal in the time domain waveform. The output voltage V o After the delay module, the output resistance control voltage V ctrl ;

[0046] The resistive switching module can realize resistance switching between high resistance state and low resistance state, thereby simulating the threshold transition process of the sulfur-based threshold transition device.

[0047] In some embodiments, the chalcogenide threshold transition device can achieve instantaneous switching from a high resistance state to a low resistance state; specifically, when the voltage applied to the chalcogenide threshold transition device increases from zero to a threshold voltage V thDuring the process, it is in a high resistance state; when the voltage applied to the sulfur threshold transition device exceeds the threshold voltage V th After that, it is in low resistance state; when the voltage decreases and is less than the holding voltage V h After that, the device returns to the high-resistance state spontaneously; the threshold voltage V th Greater than the holding voltage V h ;

[0048] In some embodiments, the sulfur-based threshold transition device includes a top electrode layer, a bottom electrode layer, and a functional layer located between the top electrode layer and the bottom electrode layer; specifically, the top electrode layer and the bottom electrode layer are both made of inert electrode materials; wherein the inert electrode material is one or more of Pt, W, Au, Ru, Al, TiN, TiW, Ta, TaN, IrO2, ITO and IZO; the functional layer is made of a tellurium-based OTS material doped with a single element or multiple elements, or a selenium-based OTS material doped with a single element or multiple elements, or a sulfur-based OTS material doped with a single element or multiple elements.

[0049] In some embodiments, the threshold switching module has a threshold switching function. When the voltage of the data selection terminal sel is 1V, the output voltage V mux is the voltage at the “1” input terminal, namely V th +V bot When the voltage of the data selection terminal sel is 0, the output voltage of the threshold switching module V mux The voltage at the "0" input terminal, V h +V bot .

[0050] In some embodiments, the threshold comparison module can compare the voltages of the non-inverting input terminal and the inverting input terminal. When the voltage of the non-inverting input terminal is greater than the voltage of the inverting input terminal, the output voltage V o When the voltage at the non-inverting input is less than the voltage at the inverting input, the output voltage V o is 0.

[0051] In some embodiments, the delay module has a delay function. Compared with the input signal, the output signal has an unchanged signal waveform and only has a lag on the time scale. The delay time can be freely set according to the actual turn-on time of the sulfur-based threshold transition device.

[0052] In some embodiments, the resistance of the resistive switching module is controlled by the resistive switching control voltage V ctrl Regulation, when the resistance control voltage V ctrl When the resistance is 1V, the resistance switching module is in a fixed low resistance state R on , corresponding to the on-state resistance of the sulfur-based threshold transition device; when the resistance change control voltage V ctrlWhen it is 0, the resistance switching module is in a variable high-resistance state, corresponding to the off-state resistance of the sulfur-based threshold transition device.

[0053] Further preferably, the current flowing into the resistive switching module satisfies the following formula:

[0054]

[0055] I off = Ve βV (2)

[0056] Where V is the difference between the top electrode voltage and the bottom electrode voltage of the sulfur-based threshold transition device. top -V bot ;I off is the subthreshold current obtained based on the Poole-Frank emission model, corresponding to the off-state current of the chalcogenide threshold transition device; α and β are fitting coefficients based on the chalcogenide threshold transition device and can be freely set according to the subthreshold current of the actual device.

[0057] The above technical solution is described in detail below in conjunction with a specific embodiment.

[0058] This embodiment provides a simulation circuit of a sulfur-based threshold transition device, including four modules: a threshold switching module, a threshold comparison module, a delay module, and a resistance switching module. The structure is as follows: Figure 1 As shown;

[0059] The four modules of the simulation circuit in this embodiment cooperate with each other to simulate the threshold transition process of the chalcogenide threshold transition device. The specific working process is as follows: Figure 2 As shown; when the voltage of the data selection terminal sel is 1V, the output voltage of the threshold switching module V mux V th +V bot When the voltage of the data selection terminal sel is 0, the output voltage of the threshold switching module V mux V h +V bot ; Next, when V top Greater than V mux , the output voltage of the threshold comparison module V o is 1V; when V top Less than V mux , the output voltage of the threshold comparison module V o is 0; the output voltage V o It is divided into two paths, one is used as the data selection terminal sel voltage of the threshold switching module, and the other is obtained through the delay module to obtain the resistance control voltage V ctrl , resistance control voltage V ctrl The output voltage V of the module is compared with the threshold oThe signal waveform is the same, and there is only a lag in time scale; when the resistance control voltage V ctrl When the resistance is 1V, the resistance switching module is in a fixed low resistance state R on , corresponding to the on-state resistance of the sulfur-based threshold transition device; when the resistance change control voltage V ctrl When it is 0, the resistance switching module is in a variable high-resistance state, corresponding to the off-state resistance of the sulfur-based threshold transition device.

[0060] Figure 3 A DC measurement of a SiTe chalcogenide threshold transition device and a DC simulation diagram of its circuit are provided. When the voltage across the device is greater than its threshold voltage V th When the voltage across the device is less than its holding voltage V h When the sulphur-based threshold transition device changes from a low-resistance state to a high-resistance state, the resistive switching module fully considers the subthreshold emission behavior of the sulphur-based threshold transition device, so the simulation results are highly consistent with the measured data. It can be seen that the circuit provided in this application has high simulation accuracy for the DC characteristics of the actual sulphur-based threshold transition device. Moreover, the simulated voltage-current curve in the subthreshold region is consistent with the experimental curve based on Poole-Frenkel (PF) emission, and has a consistent change pattern. Specifically, the current flowing through the resistive switching module satisfies the following formula:

[0061]

[0062] I off = Ve βV (2)

[0063] Where V is the difference between the top electrode voltage and the bottom electrode voltage of the sulfur-based threshold transition device. top -V bot ;I off is the subthreshold current obtained based on the Poole-Frank emission model, corresponding to the off-state current of the sulfur-based threshold transition device; α and β are the fitting coefficients based on the sulfur-based threshold transition device, which can be freely set according to the subthreshold current of the actual device; when the resistance switching control voltage V ctrl When the voltage is 1V, the current flowing through the resistance switching module is V / R on , corresponding to the on-state current of the sulfur-based threshold transition device; when the resistance switching control voltage V ctrl When it is 0, the current flowing through the resistive switching module is the subthreshold current I obtained based on the Poole-Frank emission model. off , corresponding to the off-state current of the chalcogenide threshold transition device;

[0064] Figure 4(a) and Figure 4(b) are the measured current response of the SiTe sulfur-based threshold transition device under triangular pulses and the simulated current response of its circuit under triangular pulses, respectively. When the pulse voltage is greater than its threshold voltage V th When the pulse voltage is less than the holding voltage V h When the sulfur-based threshold transition device changes from a low-resistance state to a high-resistance state; the pulse switching behavior of the sulfur-based threshold transition device is fully considered, so the simulation results are highly consistent with the measured data; it can be seen that for the triangle wave response of the actual sulfur-based threshold transition device, the circuit model provided in this application has high simulation accuracy.

[0065] Figure 4(c) is a simulation diagram of the internal signal of the SiTe chalcogenide threshold transition device circuit under a triangular pulse. Specifically, the bottom electrode voltage V bot Ground, top electrode voltage V top is the triangular pulse voltage V in , when V in Less than V h +V bot When the output voltage of the threshold comparison module V o is 0, so the output voltage V mux V th +V bot At this time, the resistive switching module is in a high-resistance state, and the current flowing through is I off When V in Greater than V th +V bot When the output voltage of the threshold comparison module V o is 1V, so the output voltage of the threshold switching module V mux V h +V bot At this time, the resistive switching module is in a low resistance state, and the current flowing through is V in / R on When V in Less than V h +V bot When the output voltage of the threshold comparison module V o is 0, so the output voltage V mux V th +V bot At this time, the resistive switching module is in high resistance state again, and the current flowing through is I off .

[0066] Figure 5(a) and Figure 5(b) are respectively the measured pulse turn-on speed diagrams of the SiTe sulfur-based threshold transition device and the pulse turn-on speed simulation diagrams of its circuit model. The delay time of the simulation results can be set according to the actual turn-on time of the sulfur-based threshold transition device. Specifically, the pulse turn-on speed of the SiTe sulfur-based threshold transition device provided in this embodiment is approximately 40ns. The model fully considers the pulse turn-on delay behavior of the sulfur-based threshold transition device, so the simulation results are highly consistent with the measured data. It can be seen that the circuit provided in this application has high simulation accuracy for the square wave turn-on time response of the actual sulfur-based threshold transition device.

[0067] This application provides a simulation circuit model for a sulfur-based threshold transition device, including a threshold switching module, a threshold comparison module, a delay module, and a resistance switching module. This model, based on the device's switching mechanism, improves the curve fit between the current-voltage simulation curve and the actual electrical characteristics. The simulation circuit model provided in this application comprehensively considers the subthreshold emission and pulse switching behavior of the sulfur-based threshold transition device, and can well match the DC and pulse characteristics of the actual device. It features a simple circuit structure, high simulation accuracy, and high efficiency and reliability, facilitating understanding of device characteristics and guiding industrial production.

[0068] It should be understood that expressions such as “include” and “may include” used in the present application indicate the existence of disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements.

[0069] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0070] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A simulation circuit of a chalcogenide threshold transition device, characterized in that: include: Threshold switching module, threshold comparison module, delay module and resistance switching module; The threshold switching module is a multiplexer, with voltage input at the two input terminals. and , its output end is connected to the inverting input end of the threshold comparison module; the data selection end of the threshold switching module is connected to the output end of the threshold comparison module; wherein, is the threshold voltage of the chalcogenide threshold shift device, is the holding voltage of the chalcogenide threshold shift device; is the bottom electrode voltage of the sulphur-based threshold transition device; the threshold comparison module is an operational amplifier, whose non-inverting input terminal inputs the top electrode voltage of the sulphur-based threshold transition device, and whose output terminal is connected to the delay module; the output terminal of the delay module is connected to the input terminal of the resistance switching module; The threshold switching module is used to select the input voltage of one of the two input terminals and transmit it to the inverting input terminal of the threshold comparison module under the output voltage of the threshold comparison module input at the data selection terminal; the threshold comparison module is used to compare the voltage of the in-phase input terminal and the inverting input terminal, and output different output voltages; the delay module is used to simulate the pulse switching behavior of the sulfur-based threshold transition device by delaying the output voltage of the threshold comparison module on the time domain waveform, and output the resistive control voltage; the resistive module is used to be controlled by the resistive control voltage to simulate the threshold transition process of the sulfur-based threshold transition device; wherein, the current flowing into the resistive module is obtained through the top electrode voltage, bottom electrode voltage, low-resistance resistance and subthreshold current obtained based on the Poole-Frank emission model of the sulfur-based threshold transition device.

2. The simulation circuit according to claim 1, wherein: Current flowing into the resistive switching module for: in, is the difference between the top electrode voltage and the bottom electrode voltage of the chalcogenide threshold transition device ; is the subthreshold current obtained based on the Poole-Frank emission model, corresponding to the off-state current of the chalcogenide threshold transition device; and is the fitting coefficient based on the chalcogenide threshold transition device, which is set according to the subthreshold current of the actual device; It is the fixed low-resistance resistor of the resistive switching module; is the resistance switching control voltage.

3. The simulation circuit according to claim 1 or 2, characterized in that: In the threshold switching module, when the voltage at the data selection terminal is 1V, the output voltage of the threshold switching module is The voltage at the first input terminal ; When the voltage at the data selection terminal is 0, the output voltage of the threshold switching module The voltage at the second input terminal .

4. The simulation circuit according to claim 3, wherein: In the threshold comparison module, when the voltage of the non-inverting input terminal is greater than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 1V; when the voltage of the non-inverting input terminal is less than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 0.

5. The simulation circuit according to claim 1, wherein: Compared with the output voltage of the threshold comparison module, the resistive control voltage in the delay module has an unchanged signal waveform and only a lag in time. The delay time is set according to the actual turn-on time of the sulfur-based threshold conversion device.

6. The simulation circuit according to claim 4, characterized in that The resistance value of the resistive switching module is regulated by the resistive switching control voltage. When the resistive switching control voltage is 1V, the resistive switching module is in a fixed low-resistance state, corresponding to the on-resistance of the sulfur-based threshold transition device; when the resistive switching control voltage is 0, the resistive switching module is in a variable high-resistance state, corresponding to the off-resistance of the sulfur-based threshold transition device.

7. The simulation circuit according to claim 1, wherein: The sulphur-based threshold transition device comprises: a top electrode layer, a bottom electrode layer and a functional layer located between the top electrode layer and the bottom electrode layer; the top electrode layer and the bottom electrode layer are both made of inert electrode materials; the functional layer is made of tellurium-based OTS materials doped with a single element or multiple elements, or selenium-based OTS materials doped with a single element or multiple elements, or sulfur-based OTS materials doped with a single element or multiple elements; wherein the inert electrode material is Pt, W, Au, Ru, Al, TiN, TiW, Ta, TaN, , ITO and IZO or more.

8. The simulation circuit according to claim 7, characterized in that When the voltage applied to the sulfur-based threshold transition device increases from zero to the threshold voltage, the sulfur-based threshold transition device is in a high-resistance state; when the voltage applied to the sulfur-based threshold transition device exceeds the threshold voltage, the sulfur-based threshold transition device is in a low-resistance state; when the voltage applied to the sulfur-based threshold transition device decreases and is less than the holding voltage, the sulfur-based threshold transition device spontaneously returns to the high-resistance state; wherein the threshold voltage is greater than the holding voltage.

9. A simulation method based on the simulation circuit according to claim 1, characterized in that: The following steps are involved: Driven by the output voltage of the threshold comparison module inputted at the data selection terminal, the input voltage of one input terminal of the threshold switching module is selected and transmitted to the inverting input terminal of the threshold comparison module; Comparing the voltages of the non-inverting input terminal and the inverting input terminal of the threshold comparison module to obtain the output voltage of the threshold comparison module; By delaying the output voltage of the threshold comparison module in the time domain waveform, the pulse switching behavior of the sulfur-based threshold transition device is simulated and the resistance switching control voltage is output; Under the control of the resistance switching control voltage, the threshold transition process of the sulfur-based threshold transition device is simulated.

10. The simulation method according to claim 9, characterized in that: The specific implementation method of the simulation method includes the following steps: Step S1: Use the data selection terminal to receive the output voltage of the threshold comparison module. When the output voltage of the threshold comparison module is 1V, the output voltage of the threshold switching module is ; When the output voltage of the threshold comparison module is 0, the output voltage of the threshold switching module is ; Step S2: The output voltage of the threshold switching module is transmitted to the inverting input terminal of the threshold comparison module, and the top electrode voltage of the chalcogenide threshold shift device is input to the non-inverting input terminal of the threshold comparison module; when the voltage of the non-inverting input terminal is greater than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 1V; when the voltage of the non-inverting input terminal is less than the voltage of the inverting input terminal, the output voltage of the threshold comparison module is 0, and the process goes to step S3, and the output voltage of the threshold comparison module is fed back to step S1 at the same time; Step S3: Delay processing is performed on the output voltage of the threshold comparison module to obtain the resistance switching control voltage; Step S4: Transmitting the resistive switching control voltage to the resistive switching module. When the resistive switching control voltage is 1V, the resistive switching module is in a low resistance state, corresponding to the on-state resistance of the sulfur-based threshold transition device; when the resistive switching control voltage is 0, the resistive switching module is in a variable high resistance state, corresponding to the off-state resistance of the sulfur-based threshold transition device.

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